51st week of 2010 patent applcation highlights part 14 |
Patent application number | Title | Published |
20100320397 | MOLECULAR DIAGNOSTIC SYSTEM BASED ON EVANESCENT ILLUMINATION AND FLUORESCENCE - An illumination detection system comprises an excitation radiation source and associated radiation processing arrangement, and a focusing arrangement for focusing the excitation radiation from the radiation processing arrangement onto an analysis region of a sample. A radiation collection arrangement collects radiation from the analysis region of the sample resulting from the excitation, and a detector detects the collected radiation. The focused excitation radiation comprises an excitation line which is evanescent in the sample. This combines the advantages of line scanning (reduced analysis time) and evanescent excitation (reduced background signal) and therewith enables increased measurement speed and precision for point of care application. | 2010-12-23 |
20100320398 | FLUORESCENCE DETECTING METHOD AND FLUORESCENCE DETECTING DEVICE - Provided are a fluorescence detecting method and a fluorescence detecting device for calculating the fluorescence relaxation time constant more accurately than in the prior art when fluorescence emitted from an analyte is detected by applying laser beam. When the analyte passes the position irradiated with laser beam modulated in intensity by a modulation signal of a predetermined frequency, a first fluorescence signal of fluorescence received by a light-receiving means is collected. A second fluorescence signal of the fluorescence received by the light-receiving means is collected in a state in which the analyte is not in the position irradiated with the laser beam after the analyte has passed the position irradiated with the laser beam. Phase difference information of a fluorescence signal of the fluorescence emitted from the analyte with respect to the modulation signal of the laser beam is obtained by using the collected first fluorescence signal and second fluorescence signal, and the fluorescence relaxation time constant of the fluorescence emitted from the analyte is obtained from the obtained phase difference information of the fluorescence signal of the fluorescence emitted from the analyte. | 2010-12-23 |
20100320399 | Method and Apparatus for High Speed Activation of Oxygen Scavenging Compositions - The invention is a method, triggering unit, and system for activating an oxygen scavenging composition at high speeds. The triggering unit includes a plurality of UV lamps that can operate at increased temperatures and have high output intensites from about 10 to 35 mW/cm | 2010-12-23 |
20100320400 | EXPOSURE DEVICE - The present invention relates to an exposure device. There is provided an exposure device including: a case; a plurality of LEDs that are received inside the case and emit light in an UV wavelength range straightly to the outside; and a power supplier that supplies power applied to the LEDs. | 2010-12-23 |
20100320401 | IRRADIATION APPARATUS AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE - Disclosed herein is an irradiation apparatus including: laser light source; a polarization splitting section configured to split laser light emitted from the laser light source into first linearly polarized light and second linearly polarized light different in polarization direction; a light beam dividing section configured to divide the first or second linearly polarized light into a plurality of light beams; a quarter-wave plate array composed of a plurality of first quarter-wave plates for converting some of the light beams into right circularly polarized light and a plurality of second quarter-wave plates for converting the other of the light beams into left circularly polarized light, the first quarter-wave plates and the second quarter-wave plates being alternately arranged in a first direction perpendicular to an optical axis; and a projection optical system for condensing the right circularly polarized light and the left circularly polarized light toward a work surface to be irradiated. | 2010-12-23 |
20100320402 | Method for Three Dimensional (3D) Lattice Radiotherapy - A method for high-dose Grid radiotherapy utilizing a three-dimensional (3D) dose lattice formation is described herein. The 3D dose lattice can be achieved by, but not limited to, three technical approaches: 1) non-coplanar focused beams; 2) multileaf collimator (MLC)-based intensity modulated radiation therapy (IMRT) or aperture-modulated arc; and 3) heavy charged particle beam. The configuration of a 3D dose lattice is comprised of the number, location, and dose of dose vertices. The optimal configuration of a 3D dose lattice can be achieved by manual calculations or by automating the calculations for a generic algorithm. The objective of the optimization algorithm is to satisfy three conditions via iteration until they reach their global minimum. With 3D dose lattice, high doses of radiation are concentrated at each lattice vertex within a tumor with drastically lower doses between vertices (peak-to-valley effect), leaving tissue outside of the tumor volume minimally exposed. | 2010-12-23 |
20100320403 | ION ACCELERATION SYSTEM FOR MEDICAL AND/OR OTHER APPLICATIONS - The ion acceleration system or complex (T) for medical and/or other applications is composed in essence by an ion source ( | 2010-12-23 |
20100320404 | PARTICLE THERAPY INSTALLATION - A particle therapy system includes an ECR ion source for production of charged ions, which are accelerated in an accelerator unit that follows the ECR ion source. The accelerator unit accelerates the charged ions to an energy that is used for irradiation, where the magnetic fields of the ECR ion source are matched to operation of the ECR ion source for lightweight ions, such that the ECR ion source is operated in the afterglow mode. In the afterglow mode, an afterglow beam pulse is emitted from the ECR ion source after a microwave resonance pulse has been switched off. The current level of the afterglow beam pulse is higher than a current that is emitted from the ECR ion source during use of the microwave resonance pulse. | 2010-12-23 |
20100320405 | HANDHELD PORTABLE MULTI PURPOSE STERILIZING WAVELENGTH TRANSFORMING CONVERTER - An apparatus and a method, in a handheld portable multi purpose device, for producing multiple and variable wavelength distributions of UV radiation, or visible radiation, comprising a primary UV radiation source, and a system of wavelength transforming (WT) materials that allows selecting at will between UV A, UV B, UV C radiation (individual selections or various combinations,) and visible radiation, whereby the apparatus provides for UV sterilization of food, fluid, air, fluids, and surfaces; while also providing a means to emit visible light. Additionally, an apparatus and method, in a handheld portable multi purpose device, for enabling production and emission of UV radiation selectable between UV A, UV B, UV C radiation (individual selections or various combinations,) and visible radiation in a small form factor device embodied in a handheld portable flashlight, or lamp, type device. | 2010-12-23 |
20100320406 | Pressure Compensated Electromagnetic Proportional Directional Flow Control Valve - A pressure compensated electromagnetic proportional directional flow control valve of the present invention integrally includes: an electromagnetic proportional directional flow control valve configured to be driven by a solenoid; and a pressure compensated valve configured to carry out pressure compensation of a flow rate controlled by the electromagnetic proportional directional flow control valve. A pressure compensation spool moves so as to balance forces of a spring, a first pressure chamber, and a second pressure chamber. With this, the pressure compensation for maintaining a constant pressure difference between an upstream side and a downstream side of a first variable aperture can be carried out, and a surplus liquid of a liquid flowing from a liquid-pressure supply port to a derivation port can flow out from a branch port to outside. | 2010-12-23 |
20100320407 | FLUID-BIASED HYDRAULIC CONTROL VALVE - A hydraulic control valve is provided having a solenoid body, an energizable coil, and an armature positioned adjacent the coil. A valve stem extends from the armature. The coil is energizable to move the armature and the valve stem from a first position to a second position. The valve body, the armature and the valve stem are configured so that the armature and the valve stem are biased to the first position by pressurized fluid, allowing the armature to operate without a biasing spring. | 2010-12-23 |
20100320408 | FLUID CONTROLLER - The present invention provides a fluid controller which enables fine adjustments of low flow rates and enables a user to set desired low flow rates. Low-flow-rate piston stop-position setting means | 2010-12-23 |
20100320409 | FLOW CONTROLLERS - An apparatus for selecting a flow rate of a fluid includes an axle including an elongated cylindrical member having flow paths, each flow path being defined by a corresponding set of radial holes, each set of radial holes comprising at least one radial hole that extends substantially between an outer surface of the axle and an interior cavity of the axle, and a barrel including an elongated cylindrical member within which the axle is disposed, the barrel having input ports and an output port, the barrel being configured to enable the axle to rotate about an axis of rotation that extends along a length of the axle, wherein a flow rate of a fluid is selected by rotating the axle to a position so that a set of radial holes is in alignment with one or more ports of the barrel. | 2010-12-23 |
20100320410 | Diaphragm-actuated fluid control valve - Provided is a diaphragm-actuated fluid control valve capable of, even in a region where the pressure difference between the pressures on the upper surface side and the lower surface side of a diaphragm is small, significantly changing the amount of lift of the diaphragm relative to the change in the pressure difference, without reducing the thickness of the diaphragm, and thus is capable of providing a predetermined flow rate and performing stable flow rate control. The control valve has a diaphragm | 2010-12-23 |
20100320411 | Double containment valve system - A stemmed control valve having a housing containing a first packing assembly that is compressively loaded externally of the housing, and a second packing assembly that is independently compressively loaded in a fixed manner internally of the housing. | 2010-12-23 |
20100320412 | PROCESSES FOR PRODUCING 2,3,3,3-TETRAFLUOROPROPENE AND/OR 1,2,3,3-TETRAFLUOROPROPENE - A process is disclosed for making CF | 2010-12-23 |
20100320413 | Hydrocarbon refrigerant and detergent composition - The hydrocarbon refrigerant and detergent composition is a hydrocarbon-based composition, which may be used as a refrigerant for air conditioners, refrigerators or the like, and which may also be used as a detergent for cleaning precision components, such as semiconductor chips, motherboards or the like. The hydrocarbon composition includes about 5.0% ethane, about 60.0% propane, about 5.0% isobutene and about 30.0% butane by volume. | 2010-12-23 |
20100320414 | CHILLER REFRIGERANTS - Disclosed is a nonflammable refrigerant composition consisting of pentafluoroethane in an amount from 62% to 67% based on the weight of the composition, a second component that is selected from 1,1,1,2-tetrafluoroethane, 1,1,2,2-tetrafluoroethane, and mixtures thereof in an amount from 26% to 36% by weight; and an ethylenically unsaturated or saturated hydrocarbon compound that is at least 70% isobutane in an amount of from 1% to 4% by weight and up to 5% by weight based on the weight of the composition of another fluorohydrocarbon. The composition optionally may further include at least one additive, lubricant or combination thereof. | 2010-12-23 |
20100320415 | Antifreeze Concentrate and Coolant Compositions and Preparation Thereof - A toxicological friendly antifreeze composition having improved thermal stability is provided. In one embodiment, the antifreeze composition comprises from 5 to 80 wt. % of an aqueous freezing point depressant selected from alkali metal salts of acetates, formates, proprionates, adipiates, and succinates, and mixtures thereof; 0.1 to 10 wt. % of at least one of a 2-ethylhexanoic acid, isononanoic acid and 3,5,5-trimethylhexanoic acid; and 0.1 to 10 wt. % of at least one of octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, neodecanoic acid, benzoic acid, 2-hydroxybenzoic acid, p-terbutylbenzoic acid, and mixtures thereof. In one embodiment, the composition is employed as a concentrate in admixture with 10 to 90 wt. % water. The composition may be totally free of glycol, or, in an alternate embodiment, possess a glycol:non-glycol base ratio of 1:2 to 1:20. | 2010-12-23 |
20100320416 | FLUORINATED SULFONAMIDE SURFACTANTS FOR AQUEOUS CLEANING SOLUTIONS - Described are anionic N-substituted fluorinated sulfonamide surfactants, and use thereof in cleaning and in acid etch solutions. The cleaning and etch solutions are used with a wide variety of substrates, for example, in the cleaning and etching of silicon oxide-containing substrates. | 2010-12-23 |
20100320417 | Thermal nanocomposites - Methods for preparing nanocomposites with thermal properties modified by powder size below 100 nanometers. Both low-loaded and highly-loaded nanocomposites are included. Nanoscale coated, un-coated, whisker type fillers are taught. Thermal nanocomposite layers may be prepared on substrates. | 2010-12-23 |
20100320418 | Aluminum Silicate Complex and High-Performance Adsorbent Comprising the Same - Provided is an adsorbent having superior adsorption properties for use as a dehumidifying agent for desiccant air conditioning which exhibits high adsorption properties at mid and high humidity ranges, and for use as a gas adsorbent of carbon dioxide, ammonia, formaldehyde and the like. A precursor suspension having a Si/Al ratio of 0.70 to 1.0 is prepared, and the precursor suspension is subsequently heated at 110° C. or higher for 2 days to synthesize a complex of a layered low-crystalline clay mineral and an amorphous aluminum silicate. The obtained complex of the layered low-crystalline clay mineral and the amorphous aluminum silicate yields excellent water vapor adsorption performance of 45 wt % or more at a relative humidity of 60%, and therefore can be used as an adsorbent for desiccant air conditioning. The complex also yields excellent carbon dioxide absorption/desorption performance of 12 wt % or more at 100 kPa to 900 kPa, and therefore can be used as a gas adsorbent for gas such as ammonia and formaldehyde. | 2010-12-23 |
20100320419 | POLYMERIZABLE COMPOUND AND POLYMERIZABLE COMPOSITION - A polymerizable compound represented by general formula (1): | 2010-12-23 |
20100320420 | LIQUID-CRYSTALLINE MEDIUM - The invention relates to a liquid-crystalline medium based on a mixture of polar compounds, characterised in that it comprises one or more compounds of the formula I | 2010-12-23 |
20100320421 | Hydrophilic-Core Microcapsules and their Formation - Hydrophilic-core microcapsules and methods of their formation are provided. A hydrophilic-core microcapsule may include a shell that encapsulates water with the core substance dissolved or dispersed therein. The hydrophilic-core microcapsules may be formed from an emulsion having hydrophilic-phase droplets dispersed in a hydrophobic phase, with shell-forming compound contained in the hydrophilic phase or the hydrophobic phase and the core substance contained in the hydrophilic phase. The shells of the microcapsules may be capable of being broken down in response to being contacted by an alkali, e.g., produced during corrosion, contacting the shell. | 2010-12-23 |
20100320422 | ARYLSULFONIC ACID COMPOUND AND USE THEREOF AS ELECTRON-ACCEPTOR MATERIAL - Disclosed is an arylsulfonic acid compound characterized by being represented by formula (1). By using this compound as an electron-acceptor material, highly uniform film formability can be achieved. By using a thin film containing the arylsulfonic acid compound in an OLED device or a PLED device, there can be obtained excellent EL device characteristics such as low driving voltage, high luminous efficiency and long life. | 2010-12-23 |
20100320423 | DIAMOND SINTERED COMPACT HAVING HIGH ELECTRICAL CONDUCTIVITY AND PRODUCTION METHOD THEREOF - The present invention is to provide a diamond sintered compact having good conductivity together with the characteristics, such as hardness, thermal conductivity, thermal resistance, chemical stability, almost equal to those of a natural diamond. A boron-doped diamond sintered compact having good conductivity and high thermal resistance is produced by a sintering process, in which 90 to 99.9 wt. % of a boron-doped diamond powder and 0.1 to 10% wt. % of a powder comprising, one or more of carbonates including Mg, Ca, Sr or Ba, and/or one or more of composite carbonates composed by two or more of these elements, as a bonding phase component, are sintered together under Ht/HP conditions, and the bonding phase component melts and then fills into the space between the boron-doped diamond powder particles. | 2010-12-23 |
20100320424 | GRANULAR ACETYLENE BLACK, PROCESS FOR PRODUCTION THEREOF, AND COMPOSITION - The present invention provides a granulated acetylene black which can be easily and well dispersed when it is incorporated in at least one of a resin and a rubber, the process for producing it, and its composition. | 2010-12-23 |
20100320425 | LOW TEMPERATURE CO-FIRED CERAMIC CIRCUIT BOARD - Provided is a low-temperature fired ceramic circuit board formed by subjecting a conductor paste and a green sheet to simultaneous firing at 800 to 900° C., in which: the green sheet contains a glass powder which contains 35 to 39% by weight of SiO | 2010-12-23 |
20100320426 | METHOD OF PRODUCING GROUP II-VI COMPOUND SEMICONDUCTOR, METHOD OF PRODUCING GROUP II-VI COMPOUND SEMICONDUCTOR PHOSPHOR, AND HEXAGONAL GROUP II-VI COMPOUND SEMICONDUCTOR - An object of the invention is to provide a method for the stable production of a high-purity Group II-VI compound semiconductor on an industrial scale, and also a hexagonal crystal of Group II-VI compound semiconductor in which a metal can be doped easily. Another object of the invention is to provide a method of producing a Group II-VI compound semiconductor phosphor. | 2010-12-23 |
20100320427 | CARBON BLACKS-FREE SULFUR-VULCANISED ELECTRICALLY CONDUCTIVE RUBBER BLENDS - A practical and environmentally-friendly method, i.e. the high temperature-mechanical mixing by using an internal mixing device and a two-roll open milling device is used to produce the carbon blacks-free electrically conductive sulfur-vulcanised rubber blends of solid poly(butadiene-co-acrylonitrile) and solid sulfonic acid doped polyaniline. The addition of sulfur vulcanisation system does not affect the electrical properties of the vulcanised blends. All vulcanised blends prepared by using this method show useful electrical conductivities up to the order of 10 | 2010-12-23 |
20100320428 | GASEOUS DIELECTRICS WITH LOW GLOBAL WARMING POTENTIALS - A dielectric gaseous compound which exhibits the following properties: a boiling point in the range between about −20° C. to about −273° C.; non-ozone depleting; a GWP less than about 22,200; chemical stability, as measured by a negative standard enthalpy of formation (dHf<0); a toxicity level such that when the dielectric gas leaks, the effective diluted concentration does not exceed its PEL; and a dielectric strength greater than air. | 2010-12-23 |
20100320429 | MOTORCYCLE LEAN ANGLE JACK - A jack assembly including a base for contacting a support surface and a shaft having a first end coupled to the base and a second end, wherein the shaft includes a power screw disposed therein; and a coupling head pivotally coupled to the second end of the shaft, wherein the coupling head is adapted to be coupled to an object to be lifted. | 2010-12-23 |
20100320430 | Apparatus for Exercising a Force on a Load - An apparatus for exerting a force on a load, comprising at least a first spring system and a second spring system, which two spring systems are coupled with the load and produce forces that are applied to the load, wherein an adjusting device is provided coupled with the load, which is equipped with at least one coupling with which the first spring system and/or the second spring system are/is coupled, and which adjusting device is designed for moving the coupling subject to an adjustment of the load, wherein the first spring system has a linear spring characteristic and is coupled with the load, and wherein the second spring system is coupled with the coupling at a side of the coupling removed from the load, and wherein the coupling is designed for adjusting the second spring system subject to a predetermined spring characteristic of the second spring system such that, at the side of the load, the combination of the coupling with the second spring system possesses a force path diagram having a linear characteristic. | 2010-12-23 |
20100320431 | Jack - A jack for raising a load, the jack being adapted to be fixed to the load; the jack comprising driving means coupled to a linkage which can be driven from an upper position to a lower position in order to raise the load, the driving means comprising a rotating crank for driving the linkage whereby in one revolution the crank drives the linkage from the upper to the lower and back to the upper position, the linkage being a parallelogram linkage comprising a base plate pivotally attached to support arms pivotally secured to the load whereby in the lower position the support arms of the linkage are substantially perpendicular to the base plate to raise the load. | 2010-12-23 |
20100320432 | VERTICAL MOSFET TRANSISTOR, IN PARTICULAR OPERATING AS A SELECTOR IN NONVOLATILE MEMORY DEVICES - A vertical MOSFET transistor is formed in a body of semiconductor material having a surface. The transistor includes a buried conductive region of a first conductivity type; a channel region of a second conductivity type, arranged on top of the buried conductive region; a surface conductive region of the first conductivity type, arranged on top of the channel region and the buried conductive region; a gate insulation region, extending at the sides of and contiguous to the channel region; and a gate region extending at the sides of and contiguous to the gate insulation region. | 2010-12-23 |
20100320433 | Variable Resistance Memory Device and Method of Manufacturing the Same - A variable resistance memory device includes a substrate, a plurality of active lines formed on the substrate, are uniformly separated, and extend in a first direction, a plurality of switching devices formed on the active lines and are separated from one another, a plurality of variable resistance devices respectively formed on and connected to the switching devices, a plurality of local bit lines formed on the variable resistance devices, are uniformly separated, extend in a second direction, and are connected to the variable resistance devices, a plurality of local word lines formed on the local bit lines, are uniformly separated, and extend in the first direction, a plurality of global bit lines formed on the local word lines, are uniformly separated, and extend in the second direction, and a plurality of global word lines formed on the global bit lines, are uniformly separated, and extend in the first direction. | 2010-12-23 |
20100320434 | Method of manufacturing a variable resistance structure and method of manufacturing a phase-change memory device using the same - In methods of manufacturing a variable resistance structure and a phase-change memory device, after forming a first insulation layer on a substrate having a contact region, a contact hole exposing the contact region is formed through the first insulation layer. After forming a first conductive layer on the first insulation layer to fill up the contact hole, a first protection layer pattern is formed on the first conductive layer. The first conductive layer is partially etched to form a contact and to form a pad on the contact. A second protection layer is formed on the first protection layer pattern, and then an opening exposing the pad is formed through the second protection layer and the first protection layer pattern. After formation of a first electrode, a phase-change material layer pattern and a second electrode are formed on the first electrode and the second protection layer. | 2010-12-23 |
20100320435 | PHASE-CHANGE MEMORY AND METHOD OF MAKING SAME - A phase-change memory cell structure includes a bottom diode on a substrate; a heating stem on the bottom diode; a first dielectric layer surrounding the heating stem, wherein the first dielectric layer forms a recess around the heating stem; a phase-change storage cap capping the heating stem and the first dielectric layer; and a second dielectric layer covering the first dielectric layer and the phase-change storage cap wherein the second dielectric layer defines an air gap in the recess. | 2010-12-23 |
20100320436 | ENCAPSULATED PHASE CHANGE CELL STRUCTURES AND METHODS - Methods and devices associated with phase change cell structures are described herein. In one or more embodiments, a method of forming a phase change cell structure includes forming a substrate protrusion that includes a bottom electrode, forming a phase change material on the substrate protrusion, forming a conductive material on the phase change material, and removing a portion of the conductive material and a portion of the phase change material to form an encapsulated stack structure. | 2010-12-23 |
20100320437 | Gas-phase functionalization of surfaces including carbon-based surfaces - The invention provides methods functionalizing a planar surface of a graphene layer, a graphite surface, or microelectronic structure. The graphene layer, graphite surface, or planar microelectronic structure surface is exposed to at least one vapor including at least one functionalization species that non-covalently bonds to the graphene layer, a graphite surface, or planar microelectronic surface while providing a functionalization layer of chemically functional groups, to produce a functionalized graphene layer, graphite surface, or planar microelectronic surface. | 2010-12-23 |
20100320438 | COMPLEXES OF CARBON NANOTUBES AND FULLERENES WITH MOLECULAR-CLIPS AND USE THEREOF - Separation of carbon nanotubes or fullerenes according to diameter through non-covalent pi-pi interaction with molecular clips is provided. Molecular clips are prepared by Diels-Alder reaction of polyacenes with a variety of dienophiles. The pi-pi complexes of carbon nanotubes with molecular clips are also used for selective placement of carbon nanotubes and fullerenes on substrates. | 2010-12-23 |
20100320439 | Carbon nanotube structure and method of vertically aligning carbon nanotubes - A Carbon NanoTube (CNT) structure includes a substrate, a CNT support layer, and a plurality of CNTs. The CNT support layer is stacked on the substrate and has pores therein. One end of each of the CNTs is attached to portions of the substrate exposed through the pores and each of the CNTs has its lateral sides supported by the CNT support layer. A method of vertically aligning CNTs includes: forming a first conductive substrate; stacking a CNT support layer having pores on the first conductive substrate; and attaching one end of the each of the CNTs to portions of the first conductive substrate exposed through the pores. | 2010-12-23 |
20100320440 | DEEP ULTRAVIOLET LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING SAME - An ultra-violet emitting light-emitting device and method for fabricating an ultraviolet light emitting device (LED) with an AlInGaN multiple-quantum-well active region exhibiting stable cw-powers. The LED includes a template with an ultraviolet light-emitting structure on it. The template includes a first buffer layer on a substrate, then a second buffer layer on the first preferably with a strain-relieving layer in both buffer layers. Next there is a semiconductor layer having a first type of conductivity followed by a layer providing a quantum-well region with an emission spectrum ranging from 190 nm to 369 nm. Another semiconductor layer having a second type of conductivity is applied next. Two metal contacts are applied to this construction, one to the semiconductor layer having the first type of conductivity and the other to the semiconductor layer having the second type of conductivity, to complete the LED. | 2010-12-23 |
20100320441 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF - A nitride semiconductor light emitting device comprises a first nitride semiconductor layer, an active layer of a single or multiple quantum well structure formed on the first nitride semiconductor layer and including an InGaN well layer and a multilayer barrier layer, and a second nitride semiconductor layer formed on the active layer. A fabrication method of a nitride semiconductor light emitting device comprises: forming a buffer layer on a substrate, forming a GaN layer on the buffer layer, forming a first electrode layer on the GaN layer, forming an InxGa1−xN layer on the first electrode layer, forming on the first InxGa1−xN layer an active layer including an InGaN well layer and a multilayer barrier layer for emitting light, forming a p-GaN layer on the active layer, and forming a second electrode layer on the p-GaN layer. | 2010-12-23 |
20100320442 | NANOSTRUCTURED ELECTROLUMINESCENT DEVICE AND DISPLAY - An electroluminescent device contains (1) first and second electrodes, at least one of which is transparent to radiation; (2) a hole conducting layer containing first nanoparticles wherein the hole conducting layer is in contact with said first electrode; (3) an electron conducting layer containing second nanoparticles where the electron conducting layer is in contact with the hole conducting layer and the second electrode; and optionally (4) a voltage source capable of providing positive and negative voltage, where the positive pole of the voltage source is connected to the first electrode and the negative pole is connected to the second electrode. In some embodiments, the electroluminescent device also includes an electron-hole combination layer between the hole and electron conducting layers. | 2010-12-23 |
20100320443 | ER Doped III-Nitride Materials And Devices Synthesized by MOCVD - This disclosure relates to the synthesis of Er doped GaN epilayers by in-situ doping by metal-organic chemical vapor deposition (MOCVD). In an embodiment, both above and below bandgap excitation results in a sharp PL emission peak at 1.54 μm. Contrary with other growth methods, MOCVD grown Er-doped GaN epilayers exhibit virtually no visible emission lines, an present a small thermal quenching effect. The Er incorporation has very little effect on the electrical conductivity of the GaN epilayers and Er doped layers retain similar electrical properties as those of undoped GaN. | 2010-12-23 |
20100320444 | Integrated Image Sensor System on Common Substrate - It is highly desirable to design a monolithic image sensor (and array), which could offer high quantum efficiency over broad spectral ranges, and the possibility to rapidly and randomly address any element in the array. This invention utilizes the growth of semiconductor nanowires such as Si, Ge, Si:Ge, ZnO, or their alloys based nanowires on standard substrates to create multispectral image sensors and photovoltaic cells having these highly desirable features. | 2010-12-23 |
20100320445 | Separation method of nitride semiconductor layer, semiconductor device, manufacturing method thereof, semiconductor wafer, and manufacturing method thereof - In a separation method of a nitride semiconductor layer, a graphene layer in the form of a single layer or two or more layers is formed on a surface of a first substrate. A nitride semiconductor layer is formed on the graphene layer so that the nitride semiconductor layer is bonded to the graphene layer with a bonding force due to regularity of potential at atomic level at an interface therebetween without utilizing covalent bonding. The nitride semiconductor layer is separated from the first substrate with a force which is greater than the bonding force between the nitride semiconductor layer and the graphene layer, or greater than a bonding force between respective layers of the graphene layer. | 2010-12-23 |
20100320446 | ORGANIC LIGHT-EMITTING DEVICE HAVING IMPROVED LIGHT-EMITTING EFFICIENCY AND METHOD FOR FABRICATING THE SAME - The present invention provides an organic light emitting device in which a layer having a refractive index in the range of 1.3 to 3 is further formed on an upper electrode of at least one region of regions through which rays having red, green, and blue colors are passed and a method of manufacturing the organic light emitting device. An optical length that can cause the microcavity effect according to the type of color of emitted light is controlled by using the layer to manufacture the organic light emitting device having high light emitting efficiency. | 2010-12-23 |
20100320447 | Organic electroluminescence manufacturing method and image display system having the same - An organic electroluminescence device manufacturing method and an image display system having the organic electroluminescence device are provided. The manufacturing method includes the steps of providing a substrate, forming a first electrode on the substrate, forming an organic layer having a plurality of crystals on the first electrode, and forming a second electrode on the organic layer. Each of the crystals comprises a particle. | 2010-12-23 |
20100320448 | Electronic Component And A Method Of Manufacturing An Electronic Component - An electronic component, notably one including, for example, a TFT, a storage capacitor, or a crossing between electrically conductive layers of a stack device is disclosed. The electronic component comprises a substrate whereon a first electrically conductive layer forming electrode is provided. A second electrode formed by a second electrically conductive layer is separated from the first electrode by at least a dielectric layer, comprising an interlayer of an electrically insulating material, preferably having high resistance against view ( | 2010-12-23 |
20100320449 | Organic Radiation-Emitting Component - An organic radiation-emitting component such as an organic light emitting diode (OLED), having at least two electrode layers and, between them, at least one organic self-emitting layer with a phosphorescence triplet emitter comprising as well as one phosphorescent metal complex. The radiation-emitting layer contains, embedded in a matrix, a metal complex, preferably a transition metal complex, with at least one substituted or unsubstituted guanidinate ligand. | 2010-12-23 |
20100320450 | SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE - To provide a semiconductor substrate, a semiconductor device, a light emitting device and an electronic device which have a low price, a long lifetime, and a high luminescent efficiency, and moreover are capable of being bent. A graphite substrate having heat resistance and having flexibility with respect to external force, and a first semiconductor layer, provided on the graphite substrate, which is made of a nitride of the Group XIII are included, and a method such as pulse sputter deposition can be used in forming the first semiconductor layer on the graphite substrate, to thereby allow inexpensive manufacture to be possible. In addition, since the nitride of the Group XIII is an inorganic substance, it has a long lifetime, and thus a high luminescent efficiency can be obtained. Moreover, since the graphite substrate has flexibility with respect to external force, it can also be bent. | 2010-12-23 |
20100320451 | BENZOCHRYSENE DERIVATIVE AND ORGANIC ELECTROLUMINESCENCE DEVICE USING THE SAME - A fused aromatic ring derivative shown by the following formula (1): | 2010-12-23 |
20100320452 | BENZOPHENANTHRENE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT DEVICE EMPLOYING THE SAME - A fused aromatic ring derivative shown by the following formula (1): | 2010-12-23 |
20100320453 | THIN-FILM TRANSISTOR AND METHOD FOR PRODUCING THE SAME - A thin-film transistor includes a gate electrode disposed on a substrate, a semiconductor layer formed of an organic semiconductor and constituting a channel region, a gate insulating film disposed between the gate electrode and the semiconductor layer, and a pair of source/drain electrodes electrically connected to the semiconductor layer. The semiconductor layer includes a protruding portion protruding toward the substrate from an inner region of a surface, opposite the substrate, of the semiconductor layer excluding a region near ends thereof. | 2010-12-23 |
20100320454 | White Light Emitting Material - A white light emitting material comprising a polymer having an emitting polymer chain and at least one emitting end capping group. | 2010-12-23 |
20100320455 | ORGANIC ELECTROLUMINESCENCE DEVICE, PRODUCTION PROCESS THEREFOR, AND USE THEREOF - Organic electroluminescence devices of the invention have excellent luminous efficiency and durability. Uses of the devices are also disclosed. The organic electroluminescence device includes a pair of electrodes and one or more organic layers including an emitting layer between the pair of electrodes, wherein one of the organic layer(s) includes a hole transporting compound having 2 to 10 arylamine structures in the molecule, an electron transporting compound having a structure of Formula (a) below and an emitting compound | 2010-12-23 |
20100320456 | Method for Fabricating a Doped and/or Alloyed Semiconductor - The present invention is directed to methods for depositing doped and/or alloyed semiconductor layers, an apparatus suitable for the depositing, and products prepared therefrom. | 2010-12-23 |
20100320457 | ETCHING SOLUTION COMPOSITION - Provided is an etching solution composition for selectively etching a metal film, which is composed of Al, Al alloy or the like and is arranged on an amorphous oxide film, from a laminated film including the metal film and an amorphous oxide film of various types. The etching solution composition is used for selectively etching the metal film from the laminated film which includes the amorphous oxide film and the metal film composed of Al, Al alloy, Cu, Cu alloy, Ag or Ag alloy, and is composed of an aqueous solution containing an alkali. | 2010-12-23 |
20100320458 | IGZO-BASED OXIDE MATERIAL AND METHOD OF PRODUCING IGZO-BASED OXIDE MATERIAL - The invention provides an IGZO-based oxide material and a method of producing the same, the IGZO-based oxide material being represented by a composition formula of In | 2010-12-23 |
20100320459 | THIN FILM TRANSISTOR AND METHOD OF PRODUCING THIN FILM TRANSISTOR - The invention provides a thin film transistor comprising an active layer, the active layer comprising an IGZO-based oxide material, the IGZO-based oxide material being represented by a composition formula of In | 2010-12-23 |
20100320460 | SYSTEM FOR SEPARATION OF AN ELECTRICALLY CONDUCTIVE CONNECTION - An integrated component includes a semiconductor substrate; at least one interconnect applied on the semiconductor substrate; an insulating layer applied on the at least one interconnect; and at least one opening through the insulating layer which interrupts the at least one interconnect into a first section and a second section. | 2010-12-23 |
20100320461 | INTEGRATION OF SENSE FET INTO DISCRETE POWER MOSFET - A semiconductor device includes a main field effect transistor (FET) and one or more sense FETs. A transistor portion of the sense FET is surrounded by transistors of the main FET. An electrical isolation structure that surrounds the main FET is configured to electrically isolate source and body regions of the main FET from source and body regions of the sense FET. A sense FET source pad is located at an edge of the main FET and spaced apart from the transistor portion of the sense FET. The sense FET source pad is connected to the transistor portion of the sense FET by a sense FET probe metal. The isolation structure is configured such that the transistor portion of the sense FET and the sense FET source pad are located outside an active area of the main FET. | 2010-12-23 |
20100320462 | N-TYPE CONDUCTIVE ALUMINUM NITRIDE SEMICONDUCTOR CRYSTAL AND MANUFACTURING METHOD THEREOF - This invention provides a selfsupporting substrate which consists of a n-type conductive aluminum nitride semiconductor crystal and is useful for manufacturing the vertical conductive type AlN semiconductor device. | 2010-12-23 |
20100320463 | Method of Fabricating a Semiconductor Device - A method of fabricating an electrode structure for a multilayer semiconductor device comprising a semiconductor layer having a first electrode layer in contact therewith and a second electrode layer separated there-from by a dielectric layer ( | 2010-12-23 |
20100320464 | THIN FILM TRANSISTOR, PHOTO MASK FOR DEFINING THIN FILM TRANSISTOR, AND METHOD OF MAKING THIN FILM TRANSISTOR - A photo-mask includes a first opaque pattern, a second opaque pattern, a transparent single slit, and a translucent pattern. The transparent single slit is disposed between the first opaque pattern and the second opaque pattern, and the width of the transparent single slit is substantially between 1.5 micrometers and 2.5 micrometers. The translucent pattern is connected to the first opaque pattern and the second opaque pattern. | 2010-12-23 |
20100320465 | SEMICONDUCTOR DEVICE WITH MULTI-FUNCTIONAL DIELECTRIC LAYER - A composite dielectric layer including a tensile stressed nitride layer over an oxide layer serves the dual function of acting as an SMT (stress memorization technique) film while an annealing operation is carried out and then remains partially intact as it is patterned to further serve as an RPO film during a subsequent silicidation process. The composite dielectric layer covers part of a semiconductor substrate that includes a gate structure. The tensile stressed nitride layer protects the oxide layer and alleviates oxide damage during a pre-silicidation PAI (pre-amorphization implant) process. Portions of the gate structure and the semiconductor substrate not covered by the composite dielectric layer include amorphous portions that include the PAI implanted dopant impurities. A silicide material is disposed on the gate structure and portions of the semiconductor substrate not covered by the composite dielectric layer. | 2010-12-23 |
20100320466 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A thin film transistor array substrate and a manufacturing method thereof are provided. In the manufacturing method, a first patterned conductive layer including a plurality of scan lines and a plurality of gates connected with the scan lines is formed on a substrate. A patterned gate insulating layer having a plurality of openings is then formed on the substrate to cover at least a portion of the first patterned conductive layer, and a plurality of dielectric patterns are formed in the openings. A plurality of semiconductor patterns are formed on the patterned gate insulating layer. A second patterned conductive layer is formed on the semiconductor patterns, the patterned gate insulating layer, and the dielectric patterns. A passivation layer is formed on the semiconductor patterns, the patterned gate insulating layer, and the dielectric patterns. A plurality of pixel electrodes are formed on the passivation layer. | 2010-12-23 |
20100320467 | THIN-FILM TRANSISTOR, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE USING A THIN-FILM TRANSISTOR - Disclosed is a method that includes: forming a gate electrode on a substrate, then forming an insulation layer so as to completely cover the gate electrode, thereafter forming a semiconductor layer on the insulation layer, and then forming a crystallization-inducing metal layer on the semiconductor layer; removing the part of at least the crystallization-inducing metal layer that is over a channel region of the semiconductor layer; forming source and drain electrodes at a location which is over source and drain regions respectively located at opposite sides with respect to the channel region of the semiconductor layer and is above the crystallization-inducing metal layer; and heating the crystallization-inducing metal layer so as to form a silicide layer of a crystallization-inducing metal. | 2010-12-23 |
20100320468 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - In a portion of a gate signal line and a portion of a common signal line, cutouts which are arranged perpendicular to the extending direction of these lines and open to face each other in an opposed manner are formed. A cruciform shape in appearance is formed by combining a gap defined between the gate signal line and the common signal line extending parallel to each other and the cutouts to each other. The cruciform portion formed in this manner is used as an alignment mark in the exposure of a photolithography step of a layer formed later. Due to such a constitution, in manufacturing a thin film transistor substrate, it is possible to realize the highly accurate alignment without forming a pattern only used for alignment. | 2010-12-23 |
20100320469 | ORGANIC ELECTRO-LUMINESCENCE DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME - An organic electro-luminance display device includes a first substrate including a plurality of sub-pixels, a first electrode on the first substrate, a buffer layer on the first electrode of a region that partitions each of the sub-pixels, a spacer on the buffer layer, the buffer layer and the spacer being integrally formed, an organic light-emitting layer on the first electrode that corresponds to each of the sub-pixels and the spacer, and a second electrode on the organic light-emitting layer. | 2010-12-23 |
20100320470 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor array panel includes a substrate; a first gate line disposed on the substrate and including a gate electrode; a storage electrode disposed in a layer which is the same layer as a layer of the first gate line; a gate insulating layer disposed on the first gate line and the storage electrode; a semiconductor disposed on the gate insulating layer and including a channel portion; a data line disposed on the semiconductor and including a source electrode; a drain electrode disposed on the semiconductor and facing the source electrode; a passivation layer disposed on the gate insulating layer, the data line, and the drain electrode, the passivation layer including a contact hole which exposes a portion of the drain electrode; and a pixel electrode disposed on the passivation layer and electrically connected to the drain electrode through the contact hole, wherein the gate insulating layer and the passivation layer are interposed between the pixel electrode and the substrate except for a region corresponding to the contact hole, and wherein the pixel electrode overlaps the storage electrode via the gate insulating layer and the passivation layer. | 2010-12-23 |
20100320471 | THIN-FILM TRANSISTOR ARRAY, METHOD OF FABRICATING THE SAME, AND LIQUID CRYSTAL DISPLAY DEVICE INCLUDING THE SAME - A thin-film transistor array includes an electrically insulating substrate, a plurality of thin-film transistors arranged in a matrix on the substrate, and each including a channel, a source, and a drain each comprised of an oxide-semiconductor film, a pixel electrode integrally formed with the drain, a source signal line through which a source signal is transmitted to a group of thin-film transistors, a gate signal line through which a gate signal is transmitted to a group of thin-film transistors, a source terminal formed at an end of the source signal line, and a gate terminal formed at an end of the gate signal line. The source terminal and the gate terminal are formed in the same layer as a layer in which the channel is formed. The source terminal and the gate terminal have the same electric conductivity as that of the pixel electrode. | 2010-12-23 |
20100320472 | PIXEL ELECTRODE STRUCTURE WITH HIGH DISPLAY QUALITY - A pixel electrode structure includes a transparent substrate, a data line, a common line, a first array pixel, and a second array pixel disposed on the transparent substrate. The first/second array pixels respectively include a thin film transistor, a pixel electrode, and a gate line, and the common line is disposed at a lateral side of the gate line. A first via hole and a second via hole are respectively disposed on common line and in contact with an extending portion of the first thin film transistor and an extending portion of the second thin film transistor. A dummy line is disposed at a side of the data line, and a third via hole is disposed both on the dummy line and on the common line. The present invention can not only increase the aperture ratio of the pixel, but have a better stability of the common voltage signal. | 2010-12-23 |
20100320473 | THIN FILM TRANSISTOR STRUCTURE OF PIXEL - A thin film transistor structure of a pixel is provided. In the present invention, a first metal layer serves as a gate electrode, and the gate electrode includes an extending gate electrode portion. A second metal layer includes a drain electrode partially and respectively overlapping the gate electrode and the gate electrode portion with the amorphous silicon layer interposed therebetween so as to form a first parasitic capacitor and a second parasitic capacitor. The total capacitance of the first parasitic capacitor and the second parasitic capacitor is invariable to withstand deviation caused by vibration of the machine in the photolithographic process, so that undesired effects in the liquid crystal display panel such as mura and flicker can be reduced. | 2010-12-23 |
20100320474 | GALLIUM NITRIDE FOR LIQUID CRYSTAL ELECTRODES - Described herein is a liquid crystal (LC) device having Gallium Nitride HEMT electrodes. The Gallium Nitride HEMT electrodes can be grown on a variety of substrates, including but not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium fluoride buffer layer), and spinel. Also described is a structure provided from GaN HEMT grown on large area silicon substrates and transferred to another substrate with appropriate properties for OPA devices. Such substrates include, but are not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium fluoride buffer layer), and spinel. The GaN HEMT structure includes an AlN interlayer for improving the mobility of the structure. | 2010-12-23 |
20100320475 | ETCHING TECHNIQUE FOR THE FABRICATION OF THIN (Al, In, Ga)N LAYERS - An etching technique for the fabrication of thin (Al, In, Ga)N layers. A suitable template or substrate is selected and implanted with foreign ions over a desired area to create ion implanted material. A regrowth of a device structure is then performed on the implanted template or substrate. The top growth surface of the template is bonded to a carrier wafer to created a bonded template/carrier wafer structure. The substrate is removed, as is any residual material, to expose the ion implanted material. The ion implanted material on the bonded template/carrier wafer structure is then exposed to a suitable etchant for a sufficient time to remove the ion implanted material. | 2010-12-23 |
20100320476 | VERTICAL JUNCTION FIELD EFFECT TRANSISTORS AND DIODES HAVING GRADED DOPED REGIONS AND METHODS OF MAKING - Semiconductor devices and methods of making the devices are described. The devices can be junction field-effect transistors (JFETs) or diodes such as junction barrier Schottky (JBS) diodes or PiN diodes. The devices have graded p-type semiconductor layers and/or regions formed by epitaxial growth. The methods do not require ion implantation. The devices can be made from a wide-bandgap semiconductor material such as silicon carbide (SiC) and can be used in high temperature and high power applications. | 2010-12-23 |
20100320477 | PROCESS FOR PRODUCING SILICON CARBIDE CRYSTALS HAVING INCREASED MINORITY CARRIER LIFETIMES - A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration. | 2010-12-23 |
20100320478 | LIGHT-EMITTING DIODE DEVICE INCLUDING A CURRENT BLOCKING REGION AND METHOD OF MAKING THE SAME - A light-emitting diode device includes: a substrate; a light-emitting layered structure disposed on the substrate and including a first cladding layer, an active layer, and a second cladding layer; a first electrode; a second electrode disposed on the light-emitting layered structure; and a current blocking region provided in the light-emitting layered structure below the second electrode, and having a main portion that is aligned below and is as large as the second electrode, and an extension portion extending from the main portion and protruding beyond the second electrode to a distance ranging from 3 μm to 20 μm. | 2010-12-23 |
20100320479 | LIGHT EMITTING APPARATUS AND METHOD FOR PRODUCING THE SAME - A light emitting apparatus and a production method of the apparatus are provided that can emit light with less color unevenness at high luminance. The apparatus includes a light emitting device, a transparent member receiving incident light emitted from the device, and a covering member. The transparent member is formed of an inorganic material light conversion member including an externally exposed emission surface, and a side surface contiguous to the emission surface. The covering member contains a reflective material, and covers at least the side surfaces of the transparent member. Substantially only the emission surface serves as the emission area of the apparatus. It is possible to provide emitted light having excellent directivity and luminance. Emitted light can be easily optically controlled. In the case where each light emitting apparatus is used as a unit light source, the apparatus has high secondary usability. | 2010-12-23 |
20100320480 | PHOSPHOR CONVERTING IR LEDS - The production of light of various wavelengths using IR phosphor down conversion techniques using existing LED emissions to pump sensitizer-rare earth ions that emit at other wavelengths. A sensitizer absorbs an LED chip pump emission and then transfers that energy with high quantum efficiency to dopant ions that then emits at their characteristic wavelength. | 2010-12-23 |
20100320481 | ORGANIC ELECTROLUMINESCENCE DEVICE, DISPLAY UNIT INCLUDING THE SAME, AND METHOD OF MANUFACTURING AN ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device includes a first electrode, an organic layer formed on the first electrode and including a light-emitting layer, an intermediate layer formed on the organic layer; and a second electrode formed on the intermediate layer and having a thickness of 6 nm or less. | 2010-12-23 |
20100320482 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light emitting device comprises a substrate having a plurality of light emitting elements mounted thereon; a side wall structure having a partition wall portion separating a plurality of light emitting areas that each include at least one of the light emitting elements; and encapsulating resin filled in the light emitting areas to bury the light emitting elements therein. The side wall structure is separated by a space from the substrate at, at least, the partition wall portion so as to be in noncontact with the substrate, and the encapsulating resin is formed so as to integrally, continuously fill the light emitting areas and the space without producing any interface therein. | 2010-12-23 |
20100320483 | LIGHT-EMITTING DIODE APPARATUS - An LED apparatus includes a base having thermal conductivity, an insulative substrate provided on one surface of the base and including electrodes provided on a surface of the substrate, at least one base-mounting area that is an exposed part of the base, exposed within a pass-through hole provided in the substrate, a plurality of LED elements mounted on the base in the base-mounting area and some of the LED elements in a unit electrically connected to the electrodes in series, a plurality of the units are electrically connected in parallel, and a frame disposed to surround the base-mounting area and configured to form a light-emitting area. | 2010-12-23 |
20100320484 | Light Emitting Device, Electronic Appliance, and Method for Manufacturing Light Emitting Device - To provide a light emitting device that has a structure in which a light emitting element is sandwiched by two substrates to prevent moisture from penetrating into the light emitting element, and a method for manufacturing thereof. In addition, a gap between the two substrates can be controlled precisely. In the light emitting device according to the present invention, an airtight space surrounded by a sealing material with a closed pattern is kept under reduced pressure by attaching the pair of substrates under reduced pressure. A columnar or wall-shaped structure is formed between light emitting regions inside of the sealing material, in a region overlapping with the sealing material, or in a region outside of the sealing material so that the gap between the pair of substrates can be maintained precisely. | 2010-12-23 |
20100320485 | MULTI-CHIP PACKAGED LED LIGHT SOURCE - A light source having a lead frame, a body, and a plurality of dies, each die having an LED thereon is disclosed. The body includes a top surface, a bottom surface and a plurality of side surfaces. The lead frame includes first, second, and third sections, the first section includes a die mounting area having a first protrusion that passes through the body and terminates in a pad on the bottom surface. The second and third sections each include a protrusion that is bent to form first and second leads that run along one of the side surfaces. Each die is bonded to the die mounting area such that a first contact is electrically connected to the die mounting area, and a second contact is connected to one of the second and third sections. The first protrusion of the first section provides improved heat transfer. | 2010-12-23 |
20100320486 | LIGHT-EMITTING DEVICE ARRAY WITH INDIVIDUAL CELLS - A light-emitting device and a method for manufacturing the light-emitting device is disclosed. Such a light-emitting device comprises a substrate, a plurality of cells disposed on the substrate, and a plurality of semiconductor dice, wherein each of the plurality of cells accommodates at least one of the plurality of dice. Each of the plurality of cells may be filled with an encapsulant, phosphor or a mixture of an encapsulant with phosphor to control light characteristics of the light-emitting device. In an alternative aspect, cells may be filled with an encapsulant, and comprise a transparent cover coated with or filled with phosphors to control light characteristics of the light-emitting device. | 2010-12-23 |
20100320487 | LIGHT-EMITTING DEVICE ARRAY WITH INDIVIDUAL CELLS - A light-emitting device and a method for manufacturing the light-emitting device is disclosed. Such a light-emitting device comprises a substrate, a plurality of cells disposed in the substrate, and a plurality of semiconductor dice, wherein each of the plurality of cells accommodates at least one of the plurality of dice. Each of the plurality of cells may be filled with an encapsulant, phosphor or a mixture of an encapsulant with phosphor to control light characteristics of the light-emitting device. In an alternative aspect, cells may be filled with an encapsulant, and comprise a transparent cover coated with or filled with phosphors to control light characteristics of the light-emitting device. | 2010-12-23 |
20100320488 | INTEGRATED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND ITS MANUFACTURING METHOD - An integrated compound semiconductor light-emitting-device capable of emitting light as a large-area plane light source. The light-emitting-device includes plural light-emitting-units formed over a substrate, the light-emitting-units having a compound semiconductor thin-film crystal layer, first and second-conductivity-type-side electrodes, a main light-extraction direction is the side of the substrate, and the first and the second-conductivity-type-side electrodes are formed on the opposite side to the light-extraction direction. The light-emitting-units are electrically separated from each other by a light-emitting-unit separation-trench. An optical coupling layer is formed between the substrate and the first-conductivity-type semiconductor layer. The optical coupling layer is common to the plurality of light-emitting-units, and capable of optical coupling of the plurality of light-emitting-units and distributing a light to the entire light-emitting-device. | 2010-12-23 |
20100320489 | SEMICONDUCTOR LIGHT EMITTING DEVICE WITH A CONTACT FORMED ON A TEXTURED SURFACE - A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure includes an n-contact region and a p-contact region. A cross section of the n-contact region comprises a plurality of first regions wherein portions of the light emitting layer and p-type region are removed to expose the n-type region. The plurality of first regions are separated by a plurality of second regions wherein the light emitting layer and p-type region remain in the device. The device further includes a first metal contact formed over the semiconductor structure in the p-contact region and a second metal contact formed over the semiconductor structure in the n-contact region. The second metal contact is in electrical contact with at least one of the second regions in the n-contact region. | 2010-12-23 |
20100320490 | LIGHT EMITTING DIODE PACKAGING STRUCTURE - A light emitting diode (LED) packaging structure includes a base, a transparent layer, and an LED chip. The transparent layer is provided between the LED chip and the base to increase a relative distance between the LED chip and the base. With an increased relative distance between the LED chip and the base and the light transmitting function of the transparent layer, the overall LED packaging structure can have enhanced light extraction efficiency. Further, the transparent layer provides good thermal conductivity and accordingly, forms no harm to the heat dissipation efficiency of the LED. | 2010-12-23 |
20100320491 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor light emitting device comprises a first electrode contacting layer, a first active layer on the first electrode contacting layer, a second electrode contacting layer on the first active layer, a second active layer on the second electrode contacting layer, and a third electrode contacting layer on the second active layer. | 2010-12-23 |
20100320492 | RED EMITTING SIAION-BASED MATERIAL - The invention relates to a red emitting material of the composition a(M | 2010-12-23 |
20100320493 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device comprises a substrate for mounting at least one light emitting element, a reflective film formed on the substrate, an edge of which rises perpendicularly to a surface of the substrate, and at least one light emitting element. A decrease in a reflected luminous flux from a reflective film can be restrained. | 2010-12-23 |
20100320494 | LUMINANCE-ENHANCING POLARISING PLATE FOR AN ORGANIC LIGHT-EMITTING ELEMENT - There is provided a polarizer for organic light emitting diodes (OLED) having improved brightness. The polarizer, which comprises a linear polarizer and a ¼ retardation plate, comprises a reflective polarizer film disposed between the linear polarizer and the ¼ retardation plate and transmitting a polarized light horizontal to the transmission axis of the linear polarizer while reflecting a polarized light vertical to the transmission axis of the linear polarizer. The polarizer may be useful to highly improve the brightness of the OLED device when the polarizer is used in the OLED device. | 2010-12-23 |
20100320495 | WHITE LIGHT EMITTING DEVICE AND VEHICLE LAMP USING THE SAME - A white light emitting device includes a semiconductor light emitting element that has a peak of an emission spectrum in a range of 370 nm to 480 nm, and at least one kind of phosphor that is excited by light emitted from the semiconductor light emitting element to emit visible light. The phosphor is represented by the formula: Sr | 2010-12-23 |
20100320496 | SEMICONDUCTOR DEVICE - A semiconductor device comprises a semiconductor layer having a semiconductor integrated circuit, which is for processing an electrical signal, on a semiconductor substrate and an optical interconnect layer for transmitting an optical signal are joined. Control of modulation of the optical signal transmitted in the optical interconnect layer is performed by an electrical signal from the semiconductor layer, and an electrical signal generated by reception of light in the optical interconnect layer is transmitted to the semiconductor layer. The optical interconnect layer is disposed on the underside of the semiconductor substrate. | 2010-12-23 |