50th week of 2012 patent applcation highlights part 40 |
Patent application number | Title | Published |
20120315655 | BIOMARKERS OF MUSCULOSKELETAL DISEASE - The present invention relates, in general, to biomarkers of musculoskeletal disease and, in particular, to methods of as diagnosing musculoskeletal disease, and/or predicting disease progression, by assaying for such biomarkers. The invention further relates to compounds and compositions suitable for use in such methods. | 2012-12-13 |
20120315656 | HYPERGLYCOSYLATED HCG DETECTION DEVICE - The present invention related to a pregnancy test device that can selectively detect hyperglycosylated human chorionic gonadotropin (hCG-H) in a liquid sample. The sample can be deposited on a proximal portion of the device for transport to a distal portion of the device. The device can include a release medium formed of a first material and including a detectable label thereon and a capture medium, including a capture site, in fluid communication with the release medium and formed of a second, different material. At least one of the release medium and the capture medium includes a binding member that exhibits a moderate to high affinity for hCG-H and is selectively or preferentially reactive with hCG-H. | 2012-12-13 |
20120315657 | FUNCTIONAL ASSAY FOR 5-HT2A, HISTAMINE H1 OR ADRENERGIC ALPHA 1B RECEPTORS - The present invention provides novel functional assay for 5-HT | 2012-12-13 |
20120315658 | AMELIORATION OF METABOLIC SYNDROME USING PHYSIOLOGICAL FUNCTIONS OF SPHINGOMYELIN SYNTHASE SMS2, OR SCREENING METHODS FOR AMELIORATING AGENTS - Disclosed is a method for screening for a medicinal agent that can decrease a body weight, a medicinal agent that can reduce a visceral fat, a medicinal agent that can reduce a triglyceride in the liver, and a medicinal agent that can ameliorate obesity and fatty liver. The method involves a step of measuring the inhibitory activity of a candidate substance on a sphingomyelin synthase, wherein the candidate substance is determined to have at least one function selected from the group consisting of an anti-obesity agent, a visceral fat-reducing agent, a fatty liver-treating agent and an adiponectin expression enhancer when the candidate substance has an inhibitory activity on the sphingomyelin synthase. | 2012-12-13 |
20120315659 | Reagentless Ceria-Based Colorimetric Sensor - A colorimetric reagent in the form of nanoparticles, composite nanoparticles, and nanoparticle coatings, including methods of use, methods of preparation, deposition, and assembly of related devices and specific applications. The colorimetric reagent comprises cerium oxide nanoparticles which are used in solution or immobilized on a solid support, either alone or in conjunction with oxidase enzymes, to form an active colorimetric component that reacts with an analyte to form a colored complex. The rate of color change and the intensity of the color are proportional to the amount of analyte present in the sample. Also described is the use of ceria and doped ceria nanoparticles as an oxygen storage/delivery vehicle for oxidase enzymes and applications in biocatalytic processes in anaerobic conditions of interest in biomedicine and bioanalysis. Further described are a variety of related applications of the disclosed technology including clinical diagnosis, in vivo implantable devices, food safety, and fermentation control. | 2012-12-13 |
20120315660 | METHODS AND APPARATUS FOR IMPROVING IN VITRO MEASUREMENTS USING BOYDEN CHAMBERS - Apparatus and methods to improve the Boyden chamber used in cellular biological measurements, allowing quantitative optical microscopy of biological cells in situ without using fluorescent probes or optical staining. In the preferred embodiment, a thin porous membrane separating top and bottom reservoirs includes an array of precisely positioned micropores pores manufactured using a laser-based photo-machining (ablation) process. The membrane may be composed of polyethylene terephthalate (PET), polycarbonate, polyimide, polyether ether ketone (PEEK) or other appropriate material. The pores formed in the membrane may have diameters in the range of 1 to 15 microns and spaced apart at a distance ranging from 10 to 200 microns. A plurality of upper and lower reservoirs may be provided to form a multi-well plate. The invention finds application in a wide range of potential biological applications where Boyden chamber geometries are currently used including co-culture studies, tissue remodeling studies, cell polarity determinations, endocrine signaling, cell transport, cell permeability, cell invasion and chemotaxis assays. | 2012-12-13 |
20120315661 | Derivatives of 1,2-dihydro-7-hydroxyquinolines Containing Fused Rings - The present invention describes novel dyes, including coumarins, rhodamines, and rhodols that incorporate additional fused aromatic rings. The dyes of the invention absorb at a longer wavelength than structurally similar dyes that do not possess the fused aromatic rings. Many of the dyes of the invention are useful fluorescent dyes. The invention includes chemically reactive dyes, dye-conjugates, and the use of such dyes in staining samples and detecting ligands or other analytes. | 2012-12-13 |
20120315662 | METHOD FOR THE EARLY DETECTION OF HIGH-GRADE PELVIC SEROUS CANCER - A method for early detection of high-grade pelvic serous cancers, comprising acquiring fallopian tube cells in vivo by exfoliative cytology, and examining the acquired cells for precursors of high-grade pelvic serous cancer. | 2012-12-13 |
20120315663 | Device For Separating A Membrane From A Support | 2012-12-13 |
20120315664 | ASSEMBLY AND METHOD FOR THE FILTRATION OF A LIQUID AND USE IN MICROSCOPY - An assembly and method are disclosed for the filtration of a liquid and the use thereof, wherein a supporting body is designed in a recess of a carrier and a filter membrane lies flat on the supporting body. The filter membrane and the supporting body are designed to be permeable to liquids and thus serve as filters, in particular for filtering tumor cells from blood. The carrier can having standard shapes of an object carrier for microscopy and the filtration residue on the filter membrane can be easily handled and examined in the microscope. As a result of the filter membrane lying level on the supporting body, the filtration residue can be particularly well examined microscopically. | 2012-12-13 |
20120315665 | METHOD FOR DETERMINING A MARKER IN SMALL VOLUME OF A SAMPLE OF A BODILY FLUID - The invention refers to a method for determining a marker in a small volume of a sample of a bodily fluid, the method comprising the steps of: providing a flow test element having a plurality of functional zones ( | 2012-12-13 |
20120315666 | DETECTION APPARATUS AND METHOD FOR DETECTING AIRBORNE BIOLOGICAL PARTICLES - In a detection apparatus, an inlet and an outlet are opened and an air introducing mechanism is driven to introduce air to a case, and airborne particles are electrically attracted and held on a collecting jig | 2012-12-13 |
20120315667 | REAGENT, REAGENT KIT AND ANALYZING METHOD - A method for analyzing platelet is described. In the method, a measurement sample is prepared by mixing a sample and a dye for staining platelet. The dye is selected from the group consisting of Capri blue, Nile blue and brilliant cresyl blue. By irradiating cells in the measurement sample with light, scattered light and fluorescence emitted from the cells is measured. The platelet is detected on the basis of the scattered light and the fluorescence. | 2012-12-13 |
20120315668 | Biodegradation Process and Composition - Disclosed are novel microbial compositions and biodegradation processes to treat marine animal or marine animal by-products to produce solid, liquid and lipid fractions that contain useful compounds. | 2012-12-13 |
20120315669 | METHOD FOR PREPARATIVE IN VITRO PROTEIN BIOSYNTHESIS - The invention relates to a method for preparative in vitro protein synthesis in a cell-free transcription/translation system, comprising the following steps: a) in a reaction vessel, a reaction solution is prepared, comprising the following synthesis substances: components of the transcription/translation apparatus for a defined-protein, amino acids, and metabolic components supplying energy and being necessary for the synthesis of the defined protein, b) the synthesis is performed in the reaction vessel in a defined period of time, c) after expiration of the defined period of time, the reaction solution is subjected to a separation step, in which generated low-molecular metabolic products are separated from the solution (and extracted). | 2012-12-13 |
20120315670 | Compositions and Methods for the Regulation of Multiple Genes of Interest in a Cell - Methods and compositions are provided for manipulating the genome of host cell to produce at least one exogenous gene product. Also provided are methods and composition for producing a programmable cell comprising a plurality of exogenous genes, wherein each exogenous gene is under the control of a disrupted regulatory sequence and wherein the disrupted regulatory sequences are restored by in vivo recombination. Preferably, the gene of interest is under the control of a genetically altered promoter which sequence recombination effects the expression of the exogenous gene(s). | 2012-12-13 |
20120315671 | EXPRESSION MEDIA FOR PROTEINS IN YEAST SYSTEM - The subject invention provides advantageous new media formulations, methods for their production, methods for cultivating cells using the media as well as compositions thereof and their use for enhanced expression of recombinant proteins. In certain embodiments, the subject invention provides media for use in producing recombinant proteins in yeast systems, such as | 2012-12-13 |
20120315672 | METHODS FOR MICROBIAL PRODUCTION OF TERPENOIDS - The invention relates to recombinant expression of terpenoid synthase enzymes and geranylgeranyl diphosphate synthase (GGPPS) enzymes in cells and the production of diterpenoids. | 2012-12-13 |
20120315673 | MICROORGANISMS HAVING ENHANCED SUCROSE MUTASE ACTIVITY - For the biotechnological production of isomaltulose and compositions containing isomaltulose from saccharose the invention provides improved means, particularly a sucrose mutase with improved product specificity as well as microbial cells containing the improved sucrose mutase. | 2012-12-13 |
20120315674 | METHODS OF ENZYMATIC HYDROLYSIS - In one embodiment the instant invention generally pertains to a method for producing glucose for fermentation. The method comprises first treating a biomass comprising a lignocellulosic material with a mixture comprising SO2 and steam at reaction conditions sufficient to produce a composition mixture comprising cellulose suitable for enzymatic hydrolysis. Specifically, the temperature, residence time, and SO2 concentration may be selected by calculating a crystallinity index (CrI) of the biomass and using the calculated crystallinity index as an indicator of enzymatic hydrolysis rate. In this manner cellulose may be enzymatically hydrolyzed glucose for aerobic or anaerobic fermentation. | 2012-12-13 |
20120315675 | PROCESSING BIOMASS - Biomass feedstocks (e.g., plant biomass, animal biomass, and municipal waste biomass) are processed to produce useful products, such as fuels. For example, systems are described that can convert feedstock materials to a sugar solution, which can then be fermented to produce a product such as a biofuel. | 2012-12-13 |
20120315676 | ENDOGLUCANASES - The present invention relates to variant endoglucanases and particularly endoglucanases having improved properties over wild-type endoglucanase. | 2012-12-13 |
20120315677 | SACCHARIDE-SOLUTION PRODUCING APPARATUS, FERMENTATION SYSTEM, SACCHARIDE-SOLUTION PRODUCING METHOD, AND FERMENTATION METHOD - A saccharide-solution producing apparatus | 2012-12-13 |
20120315678 | MICROALGA HIGHLY ACCUMULATING STARCH, A METHOD FOR PRODUCING GLUCOSE USING THE SAME, AND A METHOD FOR PRODUCING A TARGET SUBSTANCE - Glucose is produced by hydrolyzing starch contained in a microalga which belongs to the genus | 2012-12-13 |
20120315679 | SYNTHESIS OF (6S)-5,6,7,8-TETRAHYDROFOLIC ACID - A process for the large-scale chemoenzymatic production of (6S)-5-methyl-5,6,7,8-tetrahydrofolic acid, also known as (6S)-5-methylTHFA, the process comprising the steps of: (1) reducing folic acid (FA) so as to yield dihydrofolic acid (DHFA); (2) stereoselectively reducing DHFA with dihydrofolate reductase (DHFR) in the presence of NADP/NADPH, glucose and GluDH so as to yield (6S)-THFA; (3) converting (6S)-THFA to (6S)-5-methlTHFA; and (4) isolating (6S)-5-methylTHFA, | 2012-12-13 |
20120315680 | METHODS AND MATERIALS FOR MAKING SIMVASTATIN AND RELATED COMPOUNDS - The invention disclosed herein relates to methods and materials for producing simvastatin and related compounds such as huvastatin. | 2012-12-13 |
20120315681 | Process For Producing A Monomer Component From A Genetically Modified Polyhydroxyalkanoate Biomass - The patent application relates to a method of producing a monomer component from a genetically modified polyhydroxyalkanoate (PHA) biomass, wherein the biomass is heated in the presence of a catalyst to release a monomer component from the PHA. | 2012-12-13 |
20120315682 | METHOD FOR PRODUCING HIGH AMOUNT OF GLYCOLIC ACID BY FERMENTATION - The present invention relates to an improved method for the bioconversion of a fermentable carbon source to glycolic acid by a recombinant microorganism bearing new genetic modifications such as ΔldhA, ΔmgsA, ΔarcA, and ΔlldP, ΔglcA, ΔyjcG and combination of them allowing a production with higher yield, titer and productivity. | 2012-12-13 |
20120315683 | ETHANOL PRODUCTION FROM LIGNOCELLULOSIC BIOMASS WITH RECOVERY OF COMBUSTIBLE FUEL MATERIALS - Described are processes for producing a product, such as ethanol, from lignocellulosic biomass, and producing a burnable fuel material from byproducts. The burnable fuel material can be burned on site to produce energy to feed back into the production process. | 2012-12-13 |
20120315684 | Plasma Oxidation-Reduction Method, Method for Promoting Plant/Animal Growth Using the Same, and Plasma-Generating Device for Use in Method for Promoting Plant/Animal Growth - Provided is a plasma oxidation-reduction method with which it is possible to control the structure of amino acids and proteins with high and stable reproducibility, by using plasma in order to control the amino acids and proteins that make up a living body, particularly by using plasma in order to oxidize or reduce amino acids and proteins. Also provided are a method for promoting plant/animal growth using the plasma oxidation-reduction method, and a plasma-generating device for use in the method for promoting plant/animal growth. Amino acids or proteins are oxidized or reduced in the plasma oxidation-reduction method by using an active oxygen species or active hydrogen in the plasma. Preferably, the active oxygen species comprises any one of singlet oxygen atoms, excited oxygen molecules, or hydroxyl radicals, and the active hydrogen comprises excited hydrogen atoms. | 2012-12-13 |
20120315685 | Coated Substrates and Methods of Preparing the Same - Disclosed herein are coated articles and methods of preparing the same. | 2012-12-13 |
20120315686 | COMPOSITIONS CONTAINING, METHODS INVOLVING, AND USES OF NON-NATURAL AMINO ACIDS AND POLYPEPTIDES - Disclosed herein are non-natural amino acids and polypeptides that include at least one non-natural amino acid, and methods for making such non-natural amino acids and polypeptides. The non-natural amino acids, by themselves or as a part of a polypeptide, can include a wide range of possible functionalities, but typical have at least one aromatic amine group. Also disclosed herein are non-natural amino acid polypeptides that are further modified post-translationally, methods for effecting such modifications, and methods for purifying such polypeptides. Typically, the modified non-natural amino acid polypeptides include at least one alkylated amine group. Further disclosed are methods for using such non-natural amino acid polypeptides and modified non-natural amino acid polypeptides, including therapeutic, diagnostic, and other biotechnology uses. | 2012-12-13 |
20120315687 | Substrate Composition and Method for Growing Mycological Materials - A substrate is provided for growing basidiomycete mycelium comprised of nutritional and one of non-nutritional particles and fiber characterized in that the substrate promotes the growth and differentiation of basidiomycete mycelium without supporting the production of a basidiocarp. The method of growing the basidiomycete mycelium includes inoculating the substrate with a vegetative mycelium and incubating in a first incubation period at controlled temperature, humidity and carbon dioxide levels followed by a finishing incubation period. | 2012-12-13 |
20120315688 | DISPOSABLE ITEMS MADE FROM BIOPLASTIC RESINS - Disposable items made from bioplastic resins include a biodegradable resin; and a plasticizer; wherein the resin and plasticizer are intermixed to provide a generally homogenous bioplastic that is formed to provide the device. A disposable device includes a multidose syringe, a specimen tube, a scalpel, a lancet, a sharps container, or a suction canister. A method of disposing of an item includes providing an item made from a biodegradable resin and a plasticizer that are intermixed to provide a generally homogenous bioplastic; sterilizing the item utilizing radiation or ethylene oxide gas; shredding the item; and composting the item into a compost end product, thereby disposing of the item. | 2012-12-13 |
20120315689 | SURFACTANTS THAT IMPROVE THE CLEANING OF LIPID-BASED STAINS TREATED WITH LIPASES - Described are compositions and methods relating to the removal of oily stains from fabrics and other surfaces using a lipase in combination with a selected surfactant to mediate the release of fatty acids generated by the lipase. The compositions and methods have application in, e.g., laundry cleaning and dishwashing. | 2012-12-13 |
20120315690 | SYSTEMS AND METHODS FOR PARTICLE CLASSIFICATION AND SORTING - A particle analysis system includes an inlet; an inertial focusing microchannel disposed in a substrate and having a downstream expanding region at a distal end, where the inlet is connected to a proximal end of the microchannel; a plurality of outlets connected to the microchannel at the downstream expanding region; a plurality of fluidic resistors, where each fluidic resistor is connected to a respective outlet; and a particle analyzer configured to measure a size and a position of particles in the microchannel. A particle sorting system includes an inlet; an inertial focusing microchannel disposed in a substrate and having a downstream expanding region at a distal end, where the inlet is connected to a proximal end of the microchannel; a plurality of outlets connected to the microchannel at the downstream expanding region; and a plurality of fluidic resistors, where each fluidic resistor is connected to a respective outlet. | 2012-12-13 |
20120315691 | MICRO-CALORIMETER APPARATUS - A micro-calorimeter apparatus includes a thermostated housing ( | 2012-12-13 |
20120315692 | Photobioreactor And Uses Therefor - The present invention provides novel photobioreactors, modules thereof, and methods for use in culturing and harvesting algae and cyanobacteria. | 2012-12-13 |
20120315693 | MULTILAYERED CELL CULTURE APPARATUS - A multilayered cell culture apparatus for the culturing of cells is disclosed. The cell culture apparatus is defined as an integral structure having a plurality of cell culture chambers in combination with tracheal space(s). The body of the apparatus has imparted therein gas permeable membranes in combination with tracheal spaces that will allow the free flow of gases between the cell culture chambers and the external environment. The flask body also includes an aperture that will allow access to the cell growth chambers by means of a needle or cannula. The size of the apparatus, and location of an optional neck and cap section, allows for its manipulation by standard automated assay equipment, further making the apparatus ideal for high throughput applications. | 2012-12-13 |
20120315694 | CELL CULTURE UNIT AND CELL CULTURE DEVICE INCLUDING THE SAME - There is provided a cell culture device, which includes a plurality of cell culture units, in which the cell culture unit includes: a cell culture tub that defines a culture space for cultivating cells, contains culture medium in the culture unit, and has an air layer above the culture medium; a drainage channel that is connected to the cell culture tub to discharge used culture medium to the integral drainage channel; an open culture medium reservoir that supplies new culture medium into the cell culture tub; and a droplet generator that is disposed between the cell culture tub and the open culture medium reservoir and supplies the culture medium from the open culture medium reservoir to the cell culture tub, using negative pressure of the air layer generated when the used culture medium is discharged. | 2012-12-13 |
20120315695 | Recovery of sugars from ionic liquid biomass liquor by solvent extraction - The present invention provides for a composition comprising a solution comprising (a) an ionic liquid (IL) or ionic liquid-aqueous (ILA) phase and (b) an organic phase, wherein the solution comprises a sugar and a boronic acid. The present invention also provides for a method of removing a sugar from a solution, comprising: (a) providing a solution comprising (i) an IL or ILA phase and (ii) an organic phase, wherein the solution comprises an IL, a sugar and a boronic acid; (b) contacting the sugar with the boronic acid to form a sugar-boronic acid complex, (c) separating the organic phase and the aqueous phase, wherein the organic phase contains the sugar-boronic acid complex, and optionally (d) separating the sugar from the organic phase. | 2012-12-13 |
20120315696 | METHOD FOR THE PRODUCTION OF Ad26 ADENOVIRAL VECTORS - Described are methods for large-scale production of recombinant adenovirus 26, utilizing perfusion systems and infection at very high cell densities. | 2012-12-13 |
20120315697 | Cell Culture Media Containing Combinations of Proteins - The present invention relates to cell culture media containing combinations of proteins, as well as methods of making the cell culture media, and methods of using the cell culture media to improve growth characteristics of cultured cells. | 2012-12-13 |
20120315698 | METHODS FOR STERILIZING MATERIALS CONTAINING BIOLOGICALLY ACTIVE AGENTS - Provided are methods for sterilizing a material comprising a biologically-active agent comprising irradiating said material with ionizing radiation at a dose of about 5 kGy to about 25 kGy while maintaining said material in an atmosphere comprising at least 95% by volume inert gas and at a temperature of about 4° C. or lower. Also provided are sterilized materials comprising a biologically-active agent, wherein said materials exhibit substantially the same amount of biological activity as a non-sterilized control. | 2012-12-13 |
20120315699 | STACKED, PATTERNED BIOMATERIALS AND/OR TISSUE ENGINEERING SCAFFOLDS - Stacked, lamellar constructs comprised of, synthetic or natural, polymeric membrane structures which are brought together to form 3D scaffolds for biomaterial and guided tissue engineering applications have been developed. Each layer can have 2D or 3D nano and micro topographical features similar to or different than each other which can be arranged during the construction of each lamellae and their orientation can be adjusted during construction phase of the 3D structure. Such a construct was utilized in the development of an artificial cornea with human primary cells, in which patterned surface of the components of the lamellar structure mimics the oriented collagen structure inherent in natural cornea. Similar exploitation of the 3D patterned structure can be made for tissues where aligned ECM architecture is crucial, such as ligaments, bone, tendon, skin. | 2012-12-13 |
20120315700 | IN VITRO TUMOR ANGIOGENESIS MODEL - Provided is a method of inducing tubulogenesis in normal endothelial cells comprising co-culturing the normal endothelial cells with tumor cells and forming tubules from the normal endothelial cells. | 2012-12-13 |
20120315701 | PEPTIDE INHIBITING DIFFERENTIATION OF HEMATOPOIETIC STEM CELLS OR HEMATOPOIETIC PRECURSOR CELLS AND USE OF SAME - The present invention provides a novel peptide that can be effectively used to produce or grow tissue-specific stem cells or tissue-specific progenitor cells in vitro. The peptide of the invention is a peptide having an amino acid sequence consisting of the amino acid residues set forth in SEQ ID NO:1, or an analog thereof. A feature of the peptide of the invention is having at least one of the following effects: (1) an effect of inhibiting differentiation of hematopoietic stem cells or hematopoietic progenitor cells into myeloid cells, (2) an effect of promoting amplification of mesenchymal stem cells, and (3) an effect of inducing hematopoietic stem cells from pluripotent stem cells. | 2012-12-13 |
20120315702 | CELL CULTURE PROCESSING DEVICES AND METHODS - Embodiments are directed to devices and methods for processing, cultivating or otherwise manipulating cell cultures which may be disposed on a flat or substantially flat surface such as cell culture substrate material. Devices and methods are disclosed for dividing a cell culture layer into divided portions, including isolated divided portions, that may then be transferred from the cell culture to a new location. For some embodiments, the divided portions may be transferred to a new cell culture support substrate in order to continue to grow and cultivate the cell line. | 2012-12-13 |
20120315703 | CELLS AND METHODS FOR OBTAINING THEM - Reprogrammed somatic cells, methods for reprogramming, reprogramming factors for somatic cells and uses of such factors and cells are described. Nuclear reprogramming factors [NRF] described comprise one or more of a gene product or a polynucleic acid encoding a gene product from a retinoic acid receptor (RAR/RXR) family member, or an agonist or antagonist thereof; a gene product from an Lrh1 family member; or an agonist thereof; retinoic acid or a gene product involved in synthesizing or metabolizing retinoic acid; or an agonist or antagonist thereof; or a gene product that is involved in transporting a retinoic acid family member. | 2012-12-13 |
20120315704 | APPARATUS FOR GENERATING ELECTRICAL PULSES AND METHODS OF USING THE SAME - A method and apparatus are provided for delivering an agent into a cell through the application of nanosecond pulse electric fields (“nsPEF's”). The method includes circuitry for delivery of an agent into a cell via known methods followed by the application of nanosecond pulse electric fields to said cell in order to facilitate entry of the agent into the nucleus of the cell. In a preferred embodiment, the present invention is directed to a method of enhancing gene expression in a cell comprising the application of nanosecond pulse electric fields to said cell. An apparatus for generating long and short pulses according to the present invention is also provided. The apparatus includes a pulse generator capable of producing a first pulse having a long duration and low voltage amplitude and a second pulse having a short duration and high voltage amplitude. | 2012-12-13 |
20120315706 | LIPOPROTEIN ANALYSIS BY DIFFERENTIAL CHARGED-PARTICLE MOBILITY - The invention provides methods of preparation of lipoproteins from a biological sample, including HDL, LDL, Lp(a), IDL, and VLDL, for diagnostic purposes utilizing differential charged particle mobility analysis methods. Further provided are methods for analyzing the size distribution of lipoproteins by differential charged particle mobility, which lipoproteins are prepared by methods of the invention. Further provided are methods for assessing lipid-related health risk, cardiovascular condition, risk of cardiovascular disease, and responsiveness to a therapeutic intervention, which methods utilize lipoprotein size distributions determined by methods of the invention. | 2012-12-13 |
20120315707 | MAGNETIC PATTERNS AND METHODS OF FORMING MAGNETIC PATTERNS - In a method of forming a magnetic pattern, a lower electrode layer is formed on a substrate. An insulating interlayer is formed on the lower electrode layer. The insulating interlayer is partially removed to form an opening. A first pinned layer pattern filling the opening is formed. A second pinned layer, a tunnel barrier layer, a free layer and an upper electrode layer are formed on the insulating interlayer and the first pinned layer pattern. The upper electrode layer, the free layer, the tunnel barrier layer and the second pinned layer are patterned to form a second pinned layer pattern, a tunnel barrier pattern, a free layer pattern and an upper electrode. The second pinned layer pattern covers an upper surface of the first pinned layer pattern. | 2012-12-13 |
20120315708 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes forming a source electrode and a drain electrode on a front face of a semiconductor substrate which is transparent to visible light, forming a front-side gate electrode between the source electrode and the drain electrode on the front face of the semiconductor substrate; forming an aligning mark on a region of the front face of the semiconductor substrate other than a region between the source electrode and the drain electrode, aligning the semiconductor substrate based on the aligning mark that is seen through the semiconductor substrate, and forming a back-side gate electrode on a back face of the semiconductor substrate in a location opposite the front-side gate electrode. | 2012-12-13 |
20120315709 | PROCESS AND APPARATUS FOR PRODUCING A SUBSTRATE - Process for producing a solar cell substrate, where metal particles are deposited on the surface of substrate. Metal particles are produced by liquid flame spraying method in such a way that the mean diameter of the particles to be between 30 nm and 150 nm and the deposition process is controlled in such a way that the average distance between particles is not more than four times the mean diameter of particles. Apparatus for carrying out such process. | 2012-12-13 |
20120315710 | METHOD FOR PRODUCING RECONSTITUTED WAFERS AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICES - In order to provide a method for producing semiconductor devices that can use the highly productive W to W method, and achieve a high yield, a method for producing semiconductor devices comprises a step (S | 2012-12-13 |
20120315711 | Adjusting Capacitance of Capacitors without Affecting Die Area - According to one exemplary embodiment, a method for adjusting geometry of a capacitor includes fabricating a first composite capacitor residing in a first standard cell with a first set of process parameters. The method further includes using a second standard cell having substantially same dimensions as the first standard cell. The method further includes using a capacitance value from the first composite capacitor to adjust a geometry of a second composite capacitor residing in the second standard cell, wherein the second composite capacitor is fabricated with a second set of process parameters. The geometry of the second composite capacitor can be adjusted to cause the second composite capacitor to have a capacitance value substantially equal to the capacitance value from the first composite capacitor. | 2012-12-13 |
20120315712 | Method for Detecting Embedded Voids in a Semiconductor Substrate - A method for detecting embedded voids present in a structure formed in or on a semiconductor substrate is described. The method includes performing a processing step P | 2012-12-13 |
20120315713 | METHOD FOR MANUFACTURING LIGHT EMITTING DIODE PACKAGE - A method for manufacturing an LED package, comprising steps of: providing a substrate, the substrate forming a plurality of spaced rough areas on a surface thereof, each of the rough areas forming a rough structure thereon, a block layer being provided on a remaining part of the surface of the substrate relative to the rough areas; forming a metal layer on a top surface of each rough structure; forming a reflector on the substrate, the reflector defining a cavity and surrounding two adjacent metal layers; arranging an LED chip in the cavity, the LED chip electrically connecting to the two adjacent metal layers; forming an encapsulation layer in the cavity to seal the LED; and separating the substrate from the metal layers, the encapsulation layer and the reflector. | 2012-12-13 |
20120315714 | TRANSPARENT POLARIZED LIGHT-EMITTING DEVICE - A polarized light-emitting device is fabricated by a method that includes forming a radiation-emitting layer. The radiation-emitting layer includes a radiation-emitting material that emits radiation having a wavelength included in an emission wavelength band. The radiation-emitting material is disposed between a transparent anode and a transparent cathode. An optically active reflective layer is disposed on the polarized light-emitting device. The optically active reflective layer is configured to reflect radiation having a wavelength included in a reflection wavelength band of the optically active reflective layer. The reflection wavelength band of the optically active reflective layer is adjusted to at least partially encompass the emission wavelength band of the radiation-emitting layer. | 2012-12-13 |
20120315715 | Method of Fabricating Fringe Field Switching Liquid Crystal Display Device - A method of fabricating a fringe field switching (FFS)-liquid crystal display (LCD) device may have the following advantage. An inferior connection between the drain electrode and the pixel electrode may be prevented by preventing formation of a copper compound on the drain electrode, by performing a back channel etching after patterning a pixel electrode, and by performing a wet strip rather than a dry strip. This may result in a direct contact between copper and ITO, thereby reducing the number of mask processes. | 2012-12-13 |
20120315716 | TAPER-ETCHING METHOD AND METHOD OF MANUFACTURING NEAR-FIELD LIGHT GENERATOR - A method of taper-etching a layer to be etched that is made of SiO | 2012-12-13 |
20120315717 | Methods of manufacturing wire, TFT, and flat panel display device - A method of manufacturing a wire may include forming a wire pattern, which at least includes a first conductive layer, a second conductive layer, and a third conductive layer arranged in the order stated on a substrate. At least the second conductive layer may have higher etch selectivity than the first and third conductive layers. Side holes may be formed by removing portions of the second conductive layer at ends of the wire pattern, and fine wires may be formed by injecting a masking material into the side holes and patterning the wire pattern by using the masking material as a mask. | 2012-12-13 |
20120315718 | MANUFACTURING METHOD FOR COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A compound semiconductor light-emitting element characterized by high transmittance of an electrically conductive film, low contact resistance and low sheet resistance of electrically conductive film is manufactured. The manufacturing method for a compound semiconductor light-emitting element of the present invention includes the steps of: forming a semiconductor layer formed of a group III nitride semiconductor, including a light-emitting layer on a substrate; forming an electrically conductive film on the side of the semiconductor layer opposite to the side contacting the substrate; conducting first annealing on the electrically conductive film in an atmosphere containing oxygen; conducting second annealing on the electrically conductive film in an atmosphere not containing oxygen; and exposing the electrically conductive film to atmospheric air between the step of conducting first annealing and the step of conducting second annealing. | 2012-12-13 |
20120315719 | METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMMITING DEVICE - According to one embodiment, in a method of a nitride semiconductor light emitting device, a nitride semiconductor laminated body is formed on a first substrate having a first size. A first adhesion layer with a second size smaller than the first size is formed on the nitride semiconductor laminated body. A second adhesion layer is formed on a second substrate. The first and the second substrates are bonded while the first and second adhesion layers being overlapped each other. The first substrate is removed so as to generate a recess having a third size equal to or larger than the second size. The first substrate is etched until exposing the nitride semiconductor laminated body while injecting a chemical solution into the recess. The exposed nitride semiconductor laminated body is etched using the chemical solution so as to form a concave-convex portion in the exposed nitride semiconductor laminated body. | 2012-12-13 |
20120315720 | Method for Forming Imagers - A micro-lens array with reduced or no empty space between individual micro-lenses and a method for forming same. The micro-lens array is formed by patterning a first set of micro-lens material in a checkerboard pattern on a substrate. The first set of micro-lens material is reflowed and cured into first micro-lenses impervious to subsequent reflows. Then, a second set of micro-lens material is patterned in spaces among the first micro-lenses, reflowed and cured into second micro-lenses. The reflows and cures can be conducted under different conditions, and the micro-lenses may be differently sized. The conditions of the reflows can be chosen to ensure that the focal lengths of micro-lenses are optimized for maximum sensor signal. | 2012-12-13 |
20120315721 | METHODS OF MANUFACTURING A SOLAR CELL MODULE - Methods of manufacturing a solar cell module are provided. The method may include forming lower electrodes on a substrate, forming a light absorption layer on the lower electrodes and the substrate, patterning the light absorption layer to form a trench exposing the lower electrodes, and forming window electrodes using a conductive film. The conductive film extends from a top surface of the light absorption layer to a bottom of the trench along one-sidewall of the trench and is divided at another-sidewall of the trench. | 2012-12-13 |
20120315722 | High-Throughput Printing of Semiconductor Precursor Layer from Nanoflake Particles - Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices. | 2012-12-13 |
20120315723 | METHOD FOR FABRICATING DYE-SENSITIZED SOLAR CELL - A method for fabricating a dye-sensitized solar cell is provided. The dye-sensitized solar cell includes a photo electrode including (a) mixing a TiO | 2012-12-13 |
20120315724 | METHOD AND APPARATUS FOR DEPOSITION OF SELENIUM THIN-FILM AND PLASMA HEAD THEREOF - A method for deposition of a selenium thin-film includes the following steps. First, a plasma head is provided. Then, a substrate is supported in an atmospheric pressure. Next, a solid-state selenium source is dissociated by the plasma head to deposit the selenium thin-film on the substrate. The plasma head includes a chamber, a housing and the solid-state selenium source. Plasma is produced in the chamber. The chamber is surrounded by the housing. The solid-state selenium source is supported by the housing. | 2012-12-13 |
20120315725 | SURFACE TREATMENT TO IMPROVE RESISTIVE-SWITCHING CHARACTERISTICS - This disclosure provides a method of fabricating a semiconductor device layer and associated memory cell structures. By performing a surface treatment process (such as ion bombardment) of a semiconductor device layer to create defects having a deliberate depth profile, one may create multistable memory cells having more consistent electrical parameters. For example, in a resistive-switching memory cell, one may obtain a tighter distribution of set and reset voltages and lower forming voltage, leading to improved device yield and reliability. In at least one embodiment, the depth profile is selected to modulate the type of defects and their influence on electrical properties of a bombarded metal oxide layer and to enhance uniform defect distribution. | 2012-12-13 |
20120315726 | METHOD OF MANUFACTURING A SEMICONDUCTOR CHIP PACKAGE - Provided are methods of manufacturing a semiconductor chip package. The method includes forming a plurality of semiconductor chips, each of which includes a semiconductor substrate having a front and back surfaces facing each other, a chip pad provided on the front surface of the semiconductor substrate, and an interconnection pattern extending from the chip pad along a sidewall of the semiconductor substrate, stacking the semiconductor chips such that the interconnection patterns of the semiconductor chips directly contact each other, and reflowing the interconnection patterns of the semiconductor chips to connect the stacked semiconductor chips with each other. | 2012-12-13 |
20120315727 | Thin Power Package - In one embodiment, a method for manufacturing a power semiconductor package is provided. The method includes attaching a plurality of solders balls onto a power semiconductor device. The plurality of solder balls are attached onto a lead frame using a flip bond processing step. The flip bond processing step bonds the semiconductor device to the lead frame and interconnects the lead frame to the semiconductor device in a single processing step. The semiconductor device, plurality of solder balls, and the lead frame are molded to form the power semiconductor package, wherein semiconductor device is exposed on a first side of the semiconductor package. | 2012-12-13 |
20120315728 | Saw Type Package without Exposed Pad - In one embodiment, a method for manufacturing a saw type pad is provided. The method includes performing a first molding process to form a first molded layer beneath a pad of a lead frame. A semiconductor device is placed on the pad. A second molding process is performed to form a second molded layer. The first molded layer and the second molded layer form an encapsulation to enclose the semiconductor device and the pad. The lead frame is singulated to form an individualized semiconductor package. The pad is not exposed from a bottom surface of the semiconductor package. | 2012-12-13 |
20120315729 | METHOD OF MANUFACTURING TRANSPARENT TRANSISTOR WITH MULTI-LAYERED STRUCTURES - A method of manufacturing a transparent transistor including a substrate, source and drain electrodes formed on the substrate, each having a multi-layered structure of a lower transparent layer, a metal layer and an upper transparent layer, a channel formed between the source and drain electrodes, and a gate electrode aligned with the channel. The lower transparent layer or the upper transparent layer is formed of a transparent semiconductor layer, which is the same as the channel. | 2012-12-13 |
20120315730 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. The transistor includes the oxide semiconductor film including a channel formation region and low-resistance regions in which a metal element and a dopant are included. The channel formation region is positioned between the low-resistance regions in the channel length direction. In a manufacturing method of the transistor, the metal element is added by heat treatment performed in the state where the oxide semiconductor film is in contact with a film including the metal element and the dopant is added through the film including the metal element by an implantation method so that the low resistance regions in which a metal element and a dopant are included are formed. | 2012-12-13 |
20120315731 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel is provided, which includes a plurality of gate line, a plurality of common electrodes, a gate insulating layer covering the gate lines and the common electrodes, a plurality of semiconductor layers formed on the gate insulating layer, a plurality of data lines including a plurality of source electrodes and formed on the semiconductor layer, a plurality of drain electrodes formed on the semiconductor layer, and a plurality of pixel electrodes overlapping the common electrodes and connected to the drain electrodes. Because the common electrodes are made of ITON, IZON, or a-ITON, or a double layer of ITO/ITON, IZO/IZON, or a-a-ITO/a-ITON, when H2 or SiH4 are injected to form a silicon nitride (SiNX) layer on the common electrodes, the opaque metal Sn or Zn is not produced on the surfaces of the common electrode. | 2012-12-13 |
20120315732 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND DEVICE USING SAME - In a method for fabricating a semiconductor device, a substrate may be provided that includes: a base, an active fin that projects from an upper surface of the base and is integrally formed with the base, and a buffer oxide film pattern formed on the active fin in contact with the active fin. A first dummy gate film may be formed on the substrate to cover the buffer oxide film pattern and the first dummy gate film may be smoothed to expose the buffer oxide film pattern. A second dummy gate film may be formed on the exposed buffer oxide film pattern and the first dummy gate film. | 2012-12-13 |
20120315733 | METHOD OF FABRICATING GATE ELCTRODE USING A TREATED HARD MASK - A hard mask layer with a limited thickness is formed over a gate electrode layer. A treatment is provided on the hard mask layer to transform the hard mask layer to be more resistant to wet etching solution. A patterning is provided on the treated hard mask layer and the gate electrode to from a gate structure. | 2012-12-13 |
20120315734 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate, wherein the substrate comprises a gate structure thereon; forming an offset spacer on the sidewall of the gate structure; forming a cap layer to cover the substrate and the gate structure; performing an ion implantation process to implant carbon atoms into the cap layer; performing a first etching process to form a recess in the substrate adjacent to two sides of the gate structure; and forming an epitaxial layer in the recess. | 2012-12-13 |
20120315735 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A transistor using an oxide semiconductor, which has good on-state characteristics is provided. A high-performance semiconductor device including the transistor capable of high-speed response and high-speed operation is provided. In a manufacturing method of the transistor including the oxide semiconductor film including a channel formation region, an insulating film including a metal element is formed over the oxide semiconductor film, and low-resistance regions in which a dopant added through the insulating film by an implantation method is included are formed in the oxide semiconductor film. The channel formation region is positioned between the low-resistance regions in the channel length direction. | 2012-12-13 |
20120315736 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a first region including a FinFET (Fin Field Effect Transistor), forming a second region including a PlanarFET (Planar Field Effect Transistor), forming first extension regions in the plurality of fins in the first region, forming second extension regions in the second region using the second gate electrode as a mask, forming first side walls and second side walls on side surfaces of the first gate electrode and on side surfaces of the second gate electrode, respectively, and forming a source and a drain of the FinFET in the first region using the first gate electrode and first side walls as masks and forming a source and a drain of the PlanarFET in the second region by an ion implantation method using the second gate electrode and second side walls as masks, at the same time. | 2012-12-13 |
20120315737 | METHODS OF FORMING VARIABLE RESISTIVE MEMORY DEVICES - A method of forming a variable resistive memory device includes forming a conductive pattern that alternates with a first insulation pattern along a first direction on a substrate that is parallel with a surface of the substrate, forming a preliminary sacrificial pattern on the conductive pattern that contacts a sidewall of the first insulation pattern, etching the conductive pattern using the preliminary sacrificial pattern as an etch masks to form a preliminary bottom electrode pattern, patterning the preliminary sacrificial pattern and the preliminary bottom electrode pattern to form a sacrificial pattern and a bottom electrode pattern that each include at least two portions which are separated from each other along a second direction intersecting the first direction, and replacing the sacrificial pattern with a variable resistive pattern. | 2012-12-13 |
20120315738 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - The present invention provides a method of manufacturing a semiconductor device. An insulating-separating portion, which surrounds an electrode penetrating a substrate, is filled with a stacked structure of at least two stages, including a first stage of insulating film and a second stage of insulating film. When at least one of the first and second stages of insulating films has a seam, the seam is stopped by the region in the bottom of the second stage of insulating film that does not have a seam in at least the bottom thereof, thereby increasing mechanical strength. It is possible to prevent the inner region of the insulating-separating portion from being isolated. | 2012-12-13 |
20120315739 | MANUFACTURING METHOD FOR SEMICONDUCTOR WAFER - All treatments performed in machining processes other than a polishing process are performed while pure water free from free abrasive grains is supplied. Thus, an amount of abrasive grains included in a used processing liquid discharged in each process is reduced and semiconductor scraps are collected from the used slurry for recycling. | 2012-12-13 |
20120315740 | SELECTIVE DEPOSITION OF POLYMER FILMS ON BARE SILICON INSTEAD OF OXIDE SURFACE - A method of selective deposition on silicon substrates having regions of bare silicon and regions of oxide formed thereon. The method includes placing the substrate on a wafer support inside a processing chamber, introducing a carbon-containing gas into the reactor, applying a bias to the substrate, generating a plasma from the hydrocarbon gas, implanting carbon ions into the regions of oxide on the substrate by a plasma doping process, and depositing a carbon-containing film on the bare silicon regions. | 2012-12-13 |
20120315741 | ENHANCED MAGNESIUM INCORPORATION INTO GALLIUM NITRIDE FILMS THROUGH HIGH PRESSURE OR ALD-TYPE PROCESSING - Enhanced magnesium incorporation into gallium nitride films through high pressure or ALD-type processing is described. In an example, a method of fabricating a group III-nitride film includes flowing a group III precursor, a nitrogen precursor, and a p-type dopant precursor into a reaction chamber having a substrate therein. A p-type doped group III-nitride layer is formed in the reaction chamber, above the substrate, while a total pressure in the reaction chamber is approximately in the range of 300-760 Torr. | 2012-12-13 |
20120315742 | METHOD FOR FORMING NITRIDE SEMICONDUCTOR DEVICE - A method for producing a nitride semiconductor device is disclosed. The method includes steps of: forming a channel layer, an InAlN doped layer sequentially on the substrate, raising a temperature of the substrate as supplying a gas source containing In, and/or another gas source containing Al, and growing GaN layer on the InAlN doped. Or, the method grows the channel layer, the InAlN layer, and another GaN layer sequentially on the substrate, raising the temperature of the substrate, and growing the GaN layer. These methods suppress the sublimation of InN from the InAlN layer. | 2012-12-13 |
20120315743 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A compound semiconductor device is provided with a substrate, an AlN layer formed over the substrate, an AlGaN layer formed over the AlN layer and larger in electron affinity than the AlN layer, another AlGaN layer formed over the AlGaN layer and smaller in electron affinity than the AlGaN layer. Furthermore, there are provided an i-GaN layer formed over the latter AlGaN layer, and an i-AlGaN layer and an n-AlGaN layer formed over the i-GaN layer. | 2012-12-13 |
20120315744 | Reduction of Edge Effects from Aspect Ratio Trapping - A device includes a crystalline material within an area confined by an insulator. In one embodiment, the area confined by the insulator is an opening in the insulator having an aspect ratio sufficient to trap defects using an ART technique. Method and apparatus embodiments of the invention can reduce edge effects in semiconductor devices. Embodiments of the invention can provide a planar surface over a buffer layer between a plurality of uncoalesced ART structures. | 2012-12-13 |
20120315745 | CRYSTALLINE SILICON FILM FORMING METHOD AND PLASMA CVD APPARATUS - A high-quality crystalline silicon film can be formed at a high film forming rate by performing a plasma CVD process. In a crystalline silicon film forming method for forming a crystalline silicon film on a surface of a processing target object by using a plasma CVD apparatus for introducing microwave into a processing chamber through a planar antenna having a multiple number of holes and generating plasma, the crystalline silicon film forming method includes generating plasma by exciting a film forming gas containing a silicon compound represented as Si | 2012-12-13 |
20120315746 | METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - An impurity of a first conductivity type is implanted onto a silicon carbide substrate through an opening in a mask layer. First and second films made of first and second materials respectively are formed. It is sensed that etching of the first material is performed during anisotropic etching, and then anisotropic etching is stopped. An impurity of a second conductivity type is implanted onto the silicon carbide substrate through the opening narrowed by the first and second films. Thus, the impurity regions can be formed in an accurately self-aligned manner. | 2012-12-13 |
20120315747 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD - A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region. | 2012-12-13 |
20120315748 | METHOD FOR FABRICATING AN APERTURE - A method for fabricating an aperture is disclosed. The method includes the steps of: forming a hard mask containing carbon on a surface of a semiconductor substrate; and using a non-oxygen element containing gas to perform a first etching process for forming a first aperture in the hard mask. | 2012-12-13 |
20120315749 | Metal Gate Stack Formation for Replacement Gate Technology - Generally, the subject matter disclosed herein relates to modern sophisticated semiconductor devices and methods for forming the same, wherein a reduced threshold voltage (V | 2012-12-13 |
20120315750 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR - A semiconductor device includes bit lines ( | 2012-12-13 |
20120315751 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a first insulating layer, forming a trench in the first insulating layer, forming an interconnect in the trench, forming a space between the first insulating layer and the interconnect, and disposing an upper surface of the interconnect at a position higher than an upper surface of the first insulating layer, forming an air gap in the space and forming an etching stopper film over the first insulating layer and the interconnect, forming a second insulating layer over the etching stopper film, and forming a via in the second insulating layer to be disposed over the interconnect. | 2012-12-13 |
20120315752 | METHOD OF FABRICATING NONVOLATILE MEMORY DEVICE - A method of fabricating a nonvolatile memory device includes providing an intermediate structure in which a floating gate and an isolation film are disposed adjacent to each other on a semiconductor substrate and a gate insulating film is disposed on the floating gate and the isolation film, forming a conductive film on the gate insulating film, and annealing the conductive film so that part of the conductive film on an upper portion of the floating gate flows down onto a lower portion of the floating gate and an upper portion of the isolation film. | 2012-12-13 |
20120315753 | METHOD OF FORMING A THROUGH-SILICON VIA UTILIZING A METAL CONTACT PAD IN A BACK-END-OF-LINE WIRING LEVEL TO FILL THE THROUGH-SILICON VIA - A method for fabricating through-silicon vias (TSVs) for semiconductor devices is provided. Specifically, the method involves utilizing copper contact pads in a back-end-of-line wiring level, wherein the copper contact pads act as cathodes for performing an electroplating technique to fill TSVs with plated-conductive material (e.g., copper) from an electroplating solution. Moreover, the method provides a way to fill high aspect ratio TSVs with minimal additional semiconductor fabrication process steps, which can increase the silicon area that is available for forming additional electronic components on integrated circuits. | 2012-12-13 |
20120315754 | INTERCONNECTION BARRIER MATERIAL DEVICE AND METHOD - Interconnects containing ruthenium and methods of forming can include utilization of a sacrificial protective material. Planarization or other material removal operations can be performed on a substrate having a recess, the recess containing a ruthenium containing material along with the sacrificial protective material. The protective material is later removed, and a conductor can be filled in the remaining recess. | 2012-12-13 |
20120315755 | COPPER INTERCONNECT WITH METAL HARDMASK REMOVAL - A passivation layer is formed on inlaid Cu for protection against oxidation and removal during subsequent removal of an overlying metal hardmask. Embodiments include treating an exposed upper surface of inlaid Cu with hydrofluoric acid and a copper complexing agent, such as benzene triazole, to form a passivation monolayer of a copper complex, etching to remove the metal hardmask, removing the passivation layer by heating to at least 300° C., and forming a barrier layer on the exposed upper surface of the inlaid Cu. | 2012-12-13 |