49th week of 2012 patent applcation highlights part 49 |
Patent application number | Title | Published |
20120309160 | METHOD FOR FABRICATING A DRAM CAPACITOR - A method for fabricating a dynamic random access memory (DRAM) capacitor stack is disclosed wherein the stack includes a first electrode, a dielectric layer, and a second electrode. The first electrode is formed from a conductive binary metal. A dielectric layer is formed over the first electrode. The dielectric layer is subjected to a milliseconds anneal process that serves to crystallize the dielectric material and decrease the concentration of oxygen vacancies. | 2012-12-06 |
20120309161 | Processing Phase Change Material to Improve Programming Speed - A phase change material may be processed to reduce its microcrystalline grain size and may also be processed to increase the crystallization or set programming speed of the material. For example, material doped with nitrogen to reduce grain size may be doped with titanium to reduce crystallization time. | 2012-12-06 |
20120309162 | METHOD FOR ALD DEPOSITION RATE ENHANCEMENT - A method for fabricating a dynamic random access memory (DRAM) capacitor includes forming a first electrode layer, forming a catalytic layer on the first electrode layer, optionally annealing the catalytic layer, forming a dielectric layer on the catalytic layer, optionally annealing the dielectric layer, forming a second electrode layer on the dielectric layer, and optionally annealing the capacitor stack. Advantageously, the electrode layers are TiN, the catalytic layer is MoO | 2012-12-06 |
20120309163 | METHOD OF FORMING TITANIUM OXIDE FILM HAVING RUTILE CRYSTALLINE STRUCTURE - The invention provides a method of forming a titanium oxide film having a rutile crystalline structure that has high permittivity. The titanium oxide film having a rutile crystalline structure is produced by forming an amorphous titanium oxide film on an amorphous zirconium oxide film using methyl cyclopentadienyl tris(dimethylamino)titanium as a titanium precursor by an ALD method, and crystallizing the amorphous titanium oxide film by annealing at a temperature of 300° C. or higher. | 2012-12-06 |
20120309164 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method including forming an insulation layer over a semiconductor substrate; burying a first conduction layer containing Cu in the insulation layer in a first region and burying an interconnection containing Cu in the insulation layer in a second region; forming a barrier film of a conductive material; forming a dielectric film over the barrier metal film; forming a second conduction layer over the dielectric film; patterning the second conduction layer to form an upper electrode formed of the second conduction layer in the first region; and patterning the dielectric film and the barrier metal film to cover an upper surface of the first conduction layer by the first barrier film formed of the barrier metal film, form a lower electrode including the first conduction layer and the first barrier film, and covering an upper surface of the interconnection by the second barrier film formed of the barrier metal film. | 2012-12-06 |
20120309165 | SEMICONDUCTOR DEVICE HAVING GATE TRENCH AND MANUFACTURING METHOD THEREOF - Disclosed herein is a semiconductor device that includes a trench formed across active regions and the element isolation regions. A conductive film is formed at a lower portion of the trench, and a cap insulating film is formed at an upper portion of the trench. The cap insulating film has substantially the same planer shape as that of the conductive film. | 2012-12-06 |
20120309166 | PROCESS FOR FORMING SHALLOW TRENCH ISOLATION STRUCTURE - A process for forming a shallow trench isolation structure is provided. Firstly, a semiconductor substrate is provided. Then, a hard mask is formed over the semiconductor substrate, wherein the hard mask includes a pad oxide layer, a silicon nitride layer and an opening. Then, a trench is formed in the semiconductor substrate according to the opening Then, a pull-back process is performed to treat the silicon nitride layer at a sidewall of the opening, wherein the pull-back process is a wet etching process carried out in a phosphoric acid solution. After the pull-back process is performed, an insulating material is filled in the trench, thereby forming the shallow trench isolation structure. | 2012-12-06 |
20120309167 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device includes preparing a semiconductor substrate having a circuit unit on an upper surface thereof, a metal pad electrically connected to the circuit unit, and a passivation layer that covers the circuit unit and exposes the metal pad, forming a first re-wiring layer that is electrically connected to the metal pad and is formed by a printing method to extend from the metal pad on the passivation layer and forming a second re-wiring layer on the first re-wiring layer using the first re-wiring layer as a seed by using an electro-plating process. | 2012-12-06 |
20120309168 | LASER BEAM PROCESSING METHOD FOR A WAFER - A processing method for a wafer which has, on a surface thereof, a device region in which a plurality of devices are formed and partitioned by division lines and an outer periphery excess region surrounding the device region, includes a dividing groove formation step of irradiating a laser beam of a wavelength having absorbability by a wafer along the division lines to form dividing grooves serving as start points of cutting, and a dividing step of applying external force to the wafer on which the dividing grooves are formed to cut the wafer into the individual devices. At the dividing groove formation step, the dividing grooves are formed along the division lines in the device region while a non-processed region is left in the outer periphery excess region on extension lines of the division lines. | 2012-12-06 |
20120309169 | LASER PROCESSING METHOD FOR WAFER - A processing method for a wafer on which a plurality of devices are formed and partitioned by scheduled division lines includes a dividing groove by irradiating a laser beam of a wavelength to which the wafer has absorbency along the scheduled division lines to form dividing grooves which are to be used as start points of division. An external force divides the wafer into individual devices. The dividing grooves are formed by irradiating a laser beam of a first energy which is comparatively low upon a selected scheduled division line to form a first dividing groove which is to be used as a start point of division, and irradiating another laser beam of a second energy which is higher than the first energy upon scheduled division lines other than the selected scheduled division line to form second dividing grooves which are to be used as start points of division. | 2012-12-06 |
20120309170 | EXPANDABLE FILM, DICING FILM, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE - To provide an olefinic expandable substrate and a dicing film that exhibits less contamination characteristics, high expandability without necking, which cannot be achieved by conventional olefinic expandable substrates. In order to achieve the object, an expandable film comprises a 1-butene-α-olefin copolymer (A) having a tensile modulus at 23° C. of 100 to 500 MPa and a propylenic elastomer composition (B) comprising a propylene-α-olefin copolymer (b1) and having a tensile modulus at 23° C. of 10 to 50 MPa, wherein the amount of the component (B) is 30 to 70 weight parts relative to 100 weight parts in total of components (A) and (B). | 2012-12-06 |
20120309171 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate, wherein the substrate comprises a gate structure thereon; forming a film stack on the substrate and covering the gate structure, wherein the film stack comprises at least an oxide layer and a nitride layer; removing a portion of the film stack for forming recesses adjacent to two sides of the gate structure and a disposable spacer on the sidewall of the gate structure; and filling the recesses with a material comprising silicon atoms for forming a faceted material layer. | 2012-12-06 |
20120309172 | Epitaxial Lift-Off and Wafer Reuse - A method of reusing a III-nitride growth substrate according to embodiments of the invention includes epitaxially growing a III-nitride semiconductor structure on a III-nitride substrate. The III-nitride semiconductor structure includes a sacrificial layer and an additional layer grown over the sacrificial layer. The sacrificial layer is implanted with at least one implant species. The III-nitride substrate is separated from the additional layer at the implanted sacrificial layer. In some embodiments the III-nitride substrate is GaN and the sacrificial layer is GaN, an aluminum-containing III-nitride layer, or an indium-containing III-nitride layer. In some embodiments, the III-nitride substrate is separated from the additional layer by etching the implanted sacrificial layer. | 2012-12-06 |
20120309173 | ISOLATION FOR NANOWIRE DEVICES - The present disclosure relates to the field of fabricating microelectronic devices. In at least one embodiment, the present disclosure relates to forming an isolated nanowire, wherein isolation structure adjacent the nanowire provides a substantially level surface for the formation of microelectronic structures thereon. | 2012-12-06 |
20120309174 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a MOSFET includes the steps of preparing a silicon carbide substrate, forming an active layer on the silicon carbide substrate, forming a gate oxide film on the active layer, forming a gate electrode on the gate oxide film, forming a source contact electrode on the active layer, and forming a source interconnection on the source contact electrode. The step of forming the source interconnection includes the steps of forming a conductor film on the source contact electrode and processing the conductor film by etching the conductor film with reactive ion etching. Then, the method of manufacturing a MOSFET further includes the step of performing annealing of heating the silicon carbide substrate to a temperature not lower than 50° C. after the step of processing the conductor film. | 2012-12-06 |
20120309175 | VAPOR-PHASE GROWTH SEMICONDUCTOR SUBSTRATE SUPPORT SUSCEPTOR, EPITAXIAL WAFER MANUFACTURING APPARATUS, AND EPITAXIAL WAFER MANUFACTURING METHOD - According to the present invention, there is provided a vapor-phase growth semiconductor substrate support susceptor for supporting a semiconductor substrate at the time of vapor-phase growth, wherein the susceptor comprises a pocket portion in which the semiconductor substrate is arranged and has a taper portion having a taper formed such that an upper surface of the susceptor is inclined upwards or downwards from an edge of the pocket portion to an outer side. As a result, there can be provided the susceptor for supporting the semiconductor substrate at the time of vapor-phase growth that can improve flatness of an epitaxial wafer by controlling a layer thickness of an epitaxial layer at a peripheral portion on a main front surface side of the epitaxial wafer, and the epitaxial wafer manufacturing apparatus using this susceptor. | 2012-12-06 |
20120309176 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a semiconductor substrate, a gate insulating film formed over the semiconductor substrate, a gate electrode formed on the gate insulating film, a first semiconductor layer which is embedded into a portion on both sides of the gate electrode in the semiconductor substrate, and which includes Si and a 4B group element other than Si, and a second semiconductor layer which is embedded into the portion on both sides of the gate electrode in the semiconductor substrate, so as to be superposed on the first semiconductor layer, and which includes Si and a 4B group element other than Si, wherein the gate electrode is more separated from an end of the first semiconductor layer than from an end of the second semiconductor layer. | 2012-12-06 |
20120309177 | TRENCHED POWER SEMICONDUCTOR STRUCTURE WITH REDUCED GATE IMPEDANCE AND FABRICATION METHOD THEREOF - A trenched power semiconductor structure with reduced gate impedance and a fabrication method thereof is provided. The trenched power semiconductor structure has a silicon base, a gate trench, a gate oxide layer, and a gate polysilicon structure. The gate trench is formed in the silicon base and extended to an upper surface of the silicon base. The gate oxide layer is formed at least on the inner surface of the gate trench. The gate polysilicon structure is formed in the gate trench with a protruding portion extended form the upper surface of the semiconductor substrate upward. A concave is formed on a sidewall of the protruding portion to expose the upper surface of the silicon base adjacent to the gate trench. | 2012-12-06 |
20120309178 | METHOD OF MANUFACTURING FREE-STANDING SUBSTRATE - A method of manufacturing a free-standing substrate includes the steps of growing a first thin film on a heterogeneous substrate, forming an ion implantation layer in the first thin film by implanting ions into the first thin film, dividing the first thin film into an upper thin film and a lower thin film with respect to the ion implantation layer, and growing a second thin film on the upper thin film. The free-standing substrate is manufactured without warping or cracking. No additional processes, such as a laser separation process, for separating the free-standing substrate from the heterogeneous substrate are required. | 2012-12-06 |
20120309179 | SUBSTRATE TREATING APPARATUS AND METHOD OF TREATING SUBSTRATE - A substrate treating apparatus including: a first chamber having a coating part which forms a coating film of a liquid material containing an oxidizable metal and a solvent on a substrate; a second chamber having a first heating part which heats the coating film; and a connection part which connects the first chamber and the second chamber, wherein the connection part is provided with a second heating part which heats the coating film coated on the substrate and a pressure control part which controls the pressure around the coating film. | 2012-12-06 |
20120309180 | METHOD OF FORMING A RETROGRADE MATERIAL PROFILE USING ION IMPLANTATION - A method of forming a retrograde material profile in a substrate includes forming a surface peak profile on the substrate. Ions are then implanted into the substrate to form a retrograde profile from the surface peak profile, at least one of an ion implantation dose and an ion implantation energy of the implanted ions being chosen so that the retrograde profile has a peak concentration that is positioned at a desired distance from the surface of the substrate. | 2012-12-06 |
20120309181 | PROCESS FOR DEPOSITING ELECTRODE WITH HIGH EFFECTIVE WORK FUNCTION - According to some embodiments, an electrode have a high effective work function is formed. The electrode may be the gate electrode of a transistor and may be formed on a high-k gate dielectric by depositing a first layer of conductive material, exposing that first layer to a hydrogen-containing gas, and depositing a second layer of conductive material over the first layer. The first layer may be deposited using a non-plasma process in which the substrate is not exposed to plasma or plasma-generated radicals. The hydrogen-containing gas to which the first layer is exposed may include an excited hydrogen species, which may be part of a hydrogen-containing plasma, and may be hydrogen-containing radicals. The first layer may also be exposed to oxygen before depositing the second layer. The work function of the gate electrode in the gate stack may be about 5 eV or higher in some embodiments. | 2012-12-06 |
20120309182 | Method of Forming Sidewall Spacers Having Different Widths Using a Non-Conformal Deposition Process - Disclosed herein is a method of forming sidewall spacers for a semiconductor device. In one example, the method comprises forming a gate electrode structure above a semiconducting substrate. performing a non-conformal deposition process to deposit a layer of spacer material above the gate electrode structure and performing an anisotropic etching process on the layer of spacer material to define a first sidewall spacer proximate a first side of the gate electrode structure and a second sidewall spacer proximate a second side of the gate electrode structure, wherein the first and second sidewall spacers have different widths. | 2012-12-06 |
20120309183 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device includes forming an oxidation film over a first and a second device region, forming an first etching preventing film extending over a first and a second area, removing the first etching preventing film over the first area; removing the oxidation film over the first device region, forming a first gate insulating film over the first device region, removing the oxidation film over the second device region, forming a second gate insulating film over the second device region, forming a first gate electrode over the first gate insulating film, forming a second gate electrode over the second gate insulating film, forming first source and drain regions in the first device region at both sides of the first gate electrode, and forming second source and drain regions in the second device region at both sides of the second gate electrode. | 2012-12-06 |
20120309184 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of forming a semiconductor device includes forming an interfacial layer on a semiconductor substrate, forming a high-k dielectric on the interfacial layer, forming a barrier metal on the high-k dielectric, forming a poly-silicon layer on the barrier metal, patterning the interfacial layer, the high-k dielectric, the barrier metal and the poly-silicon to form a gate stack forming spacers, extension regions, sidewalls and source/drain regions, forming an interlayer dielectric on the gate stack, etching off a portion of the interlayer dielectric to expose the poly-silicon layer, forming an impurity metal layer, which includes an impurity metal having a barrier effect to the diffusive material, and a metal layer including a diffusive material, on the poly-silicon layer and converting the poly-Si layer into a silicide containing the impurity metal. The barrier metal includes a titanium nitride (TiN) or a tantalum nitride (TaN). | 2012-12-06 |
20120309185 | METHOD OF FORMING METAL GATE STRUCTURE - A method of forming metal gate structure includes providing a substrate; forming a gate dielectric layer, a material layer and a polysilicon layer stacked on the substrate; forming a first mask layer, a second mask layer and a patterned photoresist on the polysilicon layer; removing portions of the second mask layer and the first mask layer to form a hard mask by utilizing the patterned photoresist as an etching mask; removing the patterned photoresist, and next utilizing the hard mask as an etching mask to remove parts of the polysilicon layer and parts of the material layer. Thus, a gate stack is formed. Since the patterned photoresist is removed before forming the gate stack, the gate stack is protected from damages of the photoresist-removing process. The photoresist-removing process does not attack the sidewalls of the gate stack, so a bird's beak effect of the gate dielectric layer is prevent. | 2012-12-06 |
20120309186 | CONDUCTIVE STRUCTURE FOR A SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD FOR FORMING THE SAME - A conductive structure for a semiconductor integrated circuit and method for forming the conductive structure are provided. The semiconductor integrated circuit has a pad and a passivation layer partially covering the pad to define a first opening portion having a first lateral size. The conductive structure electrically connects to the pad via the first opening portion. The conductive structure comprises a support layer defining a second opening portion. A conductor is formed in the second opening portion to serve as a bump having a planar top surface. | 2012-12-06 |
20120309187 | Conformal Coining of Solder Joints in Electronic Packages - Thermal deformation of a substrate and the substrate's warp at room temperature are used to determine the expected profile of the substrate at reflow. A contact surface profile of a coining pressure plate is selected based on the expected substrate profile. A solder surface is shaped on the substrate or a die to be joined to the substrate by the coining pressure plate, thereby facilitating the chip-joining process. | 2012-12-06 |
20120309188 | METHOD TO IMPROVE ADHESION FOR A SILVER FILLED OXIDE VIA FOR A NON-VOLATILE MEMORY DEVICE - A method for forming an interconnect structure for a memory device. The method includes providing a partially fabricated device. The partially fabricated device includes a switching element overlying a first wiring structure. A thickness of dielectric material is deposited overlying the first wiring structure. The method deposits an adhesion material overlying the thickness of the dielectric material. A via opening is formed in a portion of the thickness of the dielectric material to expose a surface region of the switching element while the adhesion material is maintained overlying the dielectric material. A second wiring material is deposited overlying the thickness of the dielectric material and to fill at least part of the via opening and forming a thickness of second wiring material overlying the adhesion material. The adhesion material maintains the second wiring material to be adhered to the surface region of the thickness of the dielectric material. | 2012-12-06 |
20120309189 | METHODS FOR FABRICATING SEMICONDUCTOR DEVICES - In a method for fabricating a semiconductor device, a semiconductor device is provided including an interlayer dielectric film and first and second hard mask patterns sequentially stacked thereon. A first trench is provided in the interlayer dielectric film through the second hard mask pattern and the first hard mask pattern. A filler material is provided on the interlayer dielectric film and the first and second hard mask patterns to fill the first trench. First and second hard mask trimming patterns are formed by trimming sidewalls of the first and second hard mask patterns and removing the filler material to expose the first trench. A damascene wire is formed by filling the first trench with a conductive material. | 2012-12-06 |
20120309190 | COPPER INTERCONNECT FORMATION - Disclosed is a method which includes forming a copper interconnect within a trench or via in a substrate. Forming the copper interconnect includes forming a ruthenium-containing seed layer on a wall of the trench or via; forming a cobalt sacrificial layer on the ruthenium-containing layer before the ruthenium-containing seed layer being exposed to an environment that is oxidizing with respect to the seed layer; and contacting the cobalt sacrificial layer with a copper plating solution, the copper plating solution dissolving the cobalt sacrificial layer and plating out copper on the unoxidized ruthenium-containing seed layer. Alternatively, the ruthenium-containing seed layer may be replaced with platinum, tungsten nitride, titanium nitride or titanium or iridium. Further alternatively, the cobalt sacrificial layer may be replaced by tin, cadmium, copper or manganese. | 2012-12-06 |
20120309191 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - In the manufacturing steps of a power-type semiconductor device, after grinding the back surface of the semiconductor wafer, when a metal film is deposited by sputtering deposition over the back surface of the wafer in a preheated state, the wafer is contained in an annular susceptor, and processed. A radial vertical cross section of the annular shape of the susceptor has a first upper surface closer to a horizontal surface for holding a peripheral portion of the top surface of the semiconductor wafer against gravity, and a second upper surface continued to and located outside the first upper surface and closer to a vertical surface for holding a side surface of the semiconductor wafer against lateral displacement. | 2012-12-06 |
20120309192 | SEMICONDUCTOR PROCESS - A semiconductor process is provided. A mask layer is formed on a substrate and has a first opening exposing a portion of the substrate. Using the mask layer as a mask, a dry etching process is performed on the substrate to form a second opening therein. The second opening has a bottom portion and a side wall extending upwards and outwards from the bottom portion, wherein the bottom portion is exposed by the first opening and the side wall is covered by the mask layer. Using the mask layer as a mask, a vertical ion implantation process is performed on the bottom portion. A conversion process is performed, so as to form converting layers on the side wall and the bottom portion of the second opening, wherein a thickness of the converting layer on the side wall is larger than a thickness of the converting layer on the bottom portion. | 2012-12-06 |
20120309193 | PALLADIUM PRECURSOR COMPOSITION - A non-catalytic palladium precursor composition is disclosed, including a palladium salt and an organoamine, wherein the composition is substantially free of water. The composition permits the use of solution processing methods to form a palladium layer on a wide variety of substrates, including in a pattern to form circuitry or pathways for electronic devices. | 2012-12-06 |
20120309194 | METHOD FOR PROVIDING HIGH ETCH RATE - A method for etching features into an etch layer in a plasma processing chamber, comprising a plurality of cycles is provided. Each cycle comprises a deposition phase and an etching phase. The deposition phase comprises providing a flow of deposition gas, forming a plasma from the deposition gas in the plasma processing chamber, providing a first bias during the deposition phase to provide an anisotropic deposition, and stopping the flow of the deposition gas into the plasma processing chamber. The etching phase, comprises providing a flow of an etch gas, forming a plasma from the etch gas in the plasma processing chamber, providing a second bias during the etch phase, wherein the first bias is greater than the second bias, and stopping the flow of the etch gas into the plasma processing chamber. | 2012-12-06 |
20120309195 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a high-quality semiconductor device having stable characteristics is provided. The method for manufacturing the semiconductor device includes the steps of: preparing a silicon carbide layer having a main surface; forming a trench in the main surface by removing a portion of the silicon carbide layer; and removing a portion of a side wall of the trench by thermal etching. | 2012-12-06 |
20120309196 | MANUFACTURING METHOD FOR DUAL DAMASCENE STRUCTURE - A manufacturing method for a dual damascene structure includes providing a substrate having a dielectric layer, a first hard mask layer and a second hard mask layer sequentially formed thereon, performing a first double patterning process to sequentially form a plurality of first trench openings and a plurality of second trench openings in the second hard mask layer, performing a second double patterning process to sequentially form a plurality of first via openings and a plurality of second via openings in the fist hard mask layer, and transferring the first trench openings, the second trench openings, the first via openings, and the second via openings to the dielectric layer to form a plurality of dual damascene openings. | 2012-12-06 |
20120309197 | METHODS OF FORMING SEMICONDUCTOR STRUCTURES - A method of forming a semiconductor structure includes forming an opening in a substrate. A dielectric layer is formed and substantially conformal to the opening. A sacrificial structure is formed within the opening, covering a portion of the dielectric layer. A portion of the dielectric layer is removed by using the sacrificial structure as an etch mask layer. The sacrificial structure is removed. | 2012-12-06 |
20120309198 | USE OF SPECTRUM TO SYNCHRONIZE RF SWITCHING WITH GAS SWITCHING DURING ETCH - A method for etching features into an etch layer in a plasma processing chamber is provided. An optically timed deposition phase is provided comprising providing a flow of deposition phase gas, detecting the presence of deposition gas within the plasma processing chamber, providing RF energy for forming a plasma from the deposition phase gas in the plasma processing chamber, and stopping the flow of the deposition gas into the plasma processing chamber. An optically timed etching phase is provided, comprising providing a flow of an etch gas, detecting the presence of the etch gas within the plasma processing chamber, providing RF energy for forming a plasma from the etch gas in the plasma processing chamber, and stopping the flow of the etch gas into the plasma processing chamber. | 2012-12-06 |
20120309199 | MANUFACTURING METHOD FOR DUAL DAMASCENE STRUCTURE - A manufacturing method for a dual damascene structure first includes providing a substrate having at least a dielectric layer, a first hard mask layer, a first cap layer, a second hard mask layer, and a second cap layer sequentially formed thereon, performing a first double patterning process to form a plurality of first trench openings and second trench openings in the second cap layer and the second hard mask, and the first layer being exposed in bottoms of the first trench openings and the second trench openings, performing a second double patterning process to form a plurality of first via openings and second via openings in the first cap layer and the first hard mask layer, and transferring the first trench openings, the second trench openings, the first via openings, and the second via openings to the dielectric layer to form a plurality of dual damascene openings. | 2012-12-06 |
20120309200 | METHOD FOR FABRICATING A BOTTOM OXIDE LAYER IN A TRENCH - A method for fabricating a bottom oxide layer in a trench ( | 2012-12-06 |
20120309201 | CRITICAL DIMENSION REDUCTION AND ROUGHNESS CONTROL - A method for forming a feature in an etch layer is provided. A photoresist layer is formed over the etch layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A control layer is formed over the photoresist layer and bottoms of the photoresist features. A conformal layer is deposited over the sidewalls of the photoresist features and control layer to reduce the critical dimensions of the photoresist features. Openings in the control layer are opened with a control layer breakthrough chemistry. Features are etched into the etch layer with an etch chemistry, which is different from the control layer break through chemistry, wherein the control layer is more etch resistant to the etch with the etch chemistry than the conformal layer. | 2012-12-06 |
20120309202 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a method for manufacturing a semiconductor device, includes forming a mask film on a base material. The base material includes a first portion made of a first material and a second portion made of a second material. The mask film includes a third portion located immediately above the first portion and made of a third material and a fourth portion located immediately above the second portion and made of a fourth material. The mask film has an opening formed in both the third portion and the fourth portion. | 2012-12-06 |
20120309203 | PLASMA ETCHING METHOD AND STORAGE MEDIUM - A plasma etching method that can increase the selection ratio of a stop layer to an interlayer insulation film. The plasma etching method is carried out on a substrate that has the interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a stop layer that stops etching and is exposed at the bottom of a hole or a trench formed in the interlayer insulation film. The interlayer insulation film and the stop layer are exposed at the same time to plasma generated from CyFz (y and z are predetermined natural numbers) gas and hydrogen-containing gas. | 2012-12-06 |
20120309204 | GAS DISTRIBUTION SHOWERHEAD FOR INDUCTIVELY COUPLED PLASMA ETCH REACTOR - A two piece ceramic showerhead includes upper and lower plates which deliver process gas to an inductively coupled plasma processing chamber. The upper plate overlies the lower plate and includes radially extending gas passages which extend inwardly from an outer periphery of the upper plate, axially extending gas passages in fluid communication with the radially extending gas passages and an annular recess forming a plenum between the upper and lower plates. The lower plate includes axially extending gas holes in fluid communication with the plenum. The upper plate can include eight radially extending gas passages evenly spaced around the periphery of the upper plate and the lower plate can include inner and outer rows of gas holes. The two piece ceramic showerhead forms a dielectric window of the chamber through which radiofrequency energy generated by an antenna is coupled into the chamber. A gas delivery system delivers process gas to a plenum between the upper and lower plates having a gas volume of no greater than 500 cm | 2012-12-06 |
20120309205 | CAPPING LAYER FOR REDUCED OUTGASSING - A method of forming a silicon oxide layer is described. The method first deposits a silicon-nitrogen-and-hydrogen containing (polysilazane) film by radical-component chemical vapor deposition (CVD). The silicon-nitrogen-and-hydrogen containing film is formed by combining a radical precursor (excited in a remote plasma) with m unexcited carbon-free silicon precursor. A capping layer is formed over the silicon-nitrogen-and-hydrogen-containing film to avoid time-evolution of underlying film properties prior to conversion into silicon oxide. The capping layer is formed by combining a radical oxygen precursor (excited in a remote plasma) with an unexcited silicon-and-carbon-containing-precursor. The films are converted to silicon oxide by exposure to oxygen-containing environments. The two films may be deposited within the same substrate processing chamber and may be deposited without breaking vacuum. | 2012-12-06 |
20120309206 | Stoichiometry Control Of Transition Metal Oxides In Thin Films - One aspect of the invention relates to a method for deposition of a film having a predetermined film composition. The method comprises: in a deposition chamber: providing a substrate at a fixed temperature; depositing a film; flowing a mixture of two gases, wherein the ratio of the two gases is selected such that the mixture has a redox potential to provide a predetermined film composition. In some embodiments, depositing a film occurs via an atomic layer deposition process or chemical vapor deposition process. Methods for chemical vapor deposition of a metal or lanthanide oxide layer are provided featuring a mixture of oxidizing and reducing gases is flowed over the transition metal oxide or lanthanide oxide layer. The mixture of gases has an oxidation potential selected to produce a layer having a desired stoichiometry of a deposited film. | 2012-12-06 |
20120309207 | FABRICATION METHOD OF SEMICONDUCTOR DEVICE - A disclosed fabrication method of a semiconductor device includes steps of depositing a dielectric film on a semiconductor substrate; thermally treating the dielectric film; and irradiating an ionized gas cluster onto the thermally treated dielectric film. | 2012-12-06 |
20120309208 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes irradiating light to an effective region of a semiconductor substrate. A wavelength of the light is a wavelength adapted so that light absorptance of the semiconductor substrate increases if an intensity of the light increases. The light is irradiated so that a focus point of the light is made within the semiconductor substrate in the irradiating. | 2012-12-06 |
20120309209 | ROTATABLE NIGHT LAMP HOLDER - present invention provides a night lamp which the holder is rotatable along the plug, comprises a shell and a plug, said shell is assembled by a front holder and rear holder, a joint for installing the bulb is positioned on the top of said shell, and the laminated electrodes for electrical connection between the bulb and the holder is solid mounted inside said joint; a rotatable plug unit is installed on the back of said rear holder, and said plug unit also comprises an annular jammer, which is fixed on said shell by screws, the plug unit is connected to said shell by said annular jammer which also makes the plug unit become rotatable, thus, user can rotate said shell and the bulb which is installed on it to meet desirable angle. | 2012-12-06 |
20120309210 | ELECTRICAL CONNECTOR WITH POWER PLUG AND POWER SOCKET - An electronic device includes a power plug and a power socket coupled to the power plug. The power plug includes a housing, two plug contacts, one conductive member, two conductive resilient pieces, and two magnetic members. The conductive resilient pieces are positioned in the housing, and are electrically connected to the conductive member. The magnetic members are positioned in the housing, and opposite to the at least two conductive resilient pieces. The power socket includes an inner housing, two socket contacts, and two metal pieces. The inner housing defines an assembly groove to receive the power plug. The metal pieces are positioned in the assembly groove of the inner housing, and are opposite to the magnetic members, such that a magnetic attraction force exerted between the metal pieces and the magnetic member actuates the power plug. | 2012-12-06 |
20120309211 | Intelligent Inter-Connect and Cross-Connect Patching System - An intelligent network patch field management system is provided that includes electronic hardware, firmware, mechanical assemblies, cables, and software that provide visible and audible cues for connecting and disconnecting patch cords in an interconnect or cross-connect patching environment. Systems of the present invention also monitor patch cord connections in a network. | 2012-12-06 |
20120309212 | MOTHERBOARD WITH EDGE CONNECTOR - A motherboard includes a board, and a hard disk drive (HDD) controller. The board includes an edge connector formed on a bottom side of the board. The edge connector includes a group of signal pins and a group of ground pins. Two cutouts are defined in the board and are located at two opposite sides of the edge connector. The HDD controller drives a storage device when the storage device is connected to the edge connector. The group of signal pins of the edge connector is connected to the HDD controller. The group of ground pins is connected to a ground layer of the motherboard. | 2012-12-06 |
20120309213 | CARD CONNECTOR WITH SEPARABLE CARD TRAY - A card connector includes a shell having an entrance formed at a front end thereof, at least one terminal set, a card tray having a lateral portion, an ejecting assembly composed of a heart-shaped guide groove formed at the lateral portion, a guide member having two ends, one of which is pivoted to the shell and the other has an interference portion for interference with the guide groove, and a springy member mounted inside the shell and working on the card tray; and a springy biasing member mounted to shell and applying the resilience to the guide groove. The lateral portion includes an extension groove having two ends, one of which communicates with the guide groove and the other extends rearward to be an open end. When the card tray is inserted into the shell through the entrance, the open end allows the interference portion to enter the extension groove. | 2012-12-06 |
20120309214 | AIRCRAFT POWER RECEPTACLE PROTECTION SYSTEM - An aircraft power receptacle protection system is disclosed to protect aircraft from damage from a connected ground power unit. One aspect of the system includes a cable for conducting electricity between a ground power unit and an aircraft that has one or more releasable breakaways that are configured to separate with a determined amount of force. The releasable breakaways are installed inline with the cable and are positioned near the aircraft. The releasable breakaway is light weight and small but is still capable of carrying the required current to the aircraft. Another aspect of the system includes an alarm system for the ground power unit that uses an alarm indicator to alert an operator that the ground power unit is connected to the aircraft. The alarm system can have a aircraft plug with a split connector having to electrically isolated contacts that are connected when the plug is connected to the aircraft receptacle. | 2012-12-06 |
20120309215 | Apparatus for Powering an Accessory Device in a Refrigerated Container - Power adapters for providing power to accessory devices in refrigerated containers are provided herein. The power adapter comprises a first connector communicatively coupled with a plurality of conductors; a second connector communicatively coupled with two or more of the plurality of conductors; and a shunt communicatively coupled with at least four of the plurality of conductors and configured to provide power to an accessory output in response to the accessory connection being communicatively coupled with an accessory device. | 2012-12-06 |
20120309216 | LOW PROFILE CONNECTOR SYSTEM - A low-profile electrical connector includes a housing having exterior perimeter sides and top and bottom surfaces, where the bottom surface is configured to extend along a user's body site and the top surface is spaced above the bottom surface. The connector also includes a side-entry guide channel disposed along the bottom surface. The channel includes an opening along the exterior perimeter side that is configured to receive an electrically conductive element. The channel is also configured to guide the electrically conductive element within the housing. The connector includes a receptacle positioned within the housing and forms an electrically conductive interface with the electrically conductive element. | 2012-12-06 |
20120309217 | SLOT MODULE AND ELECTRONIC DEVICE USING THE SAME - A slot module and an electronic device using the same are provided. The slot module is used for being inserted by an insertion element having a positioning hole. The slot module includes a main body and several extending arms. The main body includes an insertion space and at least one positioning column. The positioning column is disposed in the insertion space and used for being inserted into the positioning hole. The extending arms are extended from sides of the main body and clamped sides of the insertion element. | 2012-12-06 |
20120309218 | Electrical plug-in connector and electrical connection system - An electrical plug-in connector/an electrical connection system is used between a socket of an igniter module and an electronic control unit for a restraint system in motor vehicles. The plug-in connector comprises a housing with one or more locking arms for locking the housing to the socket. The locking arms reinforce the lock mechanism when a force is applied to pull the plug-in connector from the socket without actuating the locking arms. Alternatively, the plug-in connector/connection system comprises a housing with one or more locking arms that are selectable between a locking position and an unlocking position. The locking arms are at least partially elastic, and serve to lock the housing to the socket. When a force is applied to pull the plug-in connector from the socket, the locking arms are locking when in the locking position and releasably snapping when in the unlocking position. | 2012-12-06 |
20120309219 | CONNECTOR - A retainer ( | 2012-12-06 |
20120309220 | Jack Connector - A jack connector includes a main body, contact terminals, and an engaging assembly. The main body has a lateral opening on its one side surface and a top opening on a top surface connected to the side surface. A portion of the contact terminals are provided in the main body. The engaging assembly is mounted on the top surface of the main body to surround the top opening. The engaging assembly has two engaging plates protruding from the top opening. When a plug is inserted into the jack connector via the lateral opening, the two engaging plates of the jack connector are engaged with the plug, so that the plug can be electrically connected to the jack connector via the contact terminals. | 2012-12-06 |
20120309221 | ELECTRICAL CONNECTOR AND ASSEMBLY - An electrical connector includes a plurality of electrical cable terminations for mating with a corresponding plurality of contact pins and a planar insulative connector body. Each of the electrical cable terminations includes a tubular housing, an inner housing, and at least one electrical contact. The tubular housing is of electrically conductive material and has inner walls defining an opening and first and second opposed open ends. The inner housing is of eletrically insulating material and is inserted into the tubular housing from at least one of the open ends thereof. The inner housing comprises at least one inner space configured to receive an electrical contact in a fixed relative position. The electrical contact is positioned in the inner housing and configured to be connected to an electrical cable. The planar insulative connector body has an upper surface and an opposing lower surface. The upper and lower surfaces are defined by a front edge, a back edge, and two longitudinal side edges. The upper surface includes a plurality of longitudinal channels. Each channel contains one of the plurality of electrical cable terminations. The front edge of the connector body has a plurality of openings for guiding the contact pins into the mating electrical cable terminations positioned within the channels. An electrical connector assembly may include a plurality of the electrical connectors secured in a stacked configuration. | 2012-12-06 |
20120309222 | CONNECTOR COUPLING STRUCTURE AND HOLDER DEVICE - A connector portion of a hard disk device is provided with a recess portion that guides a connector portion of a holder device so as to align the connector portion of the holder device with the connector portion of the hard disk device. The connector portion of the holder device is provided with a guide projection that is guided by the recess portion. A connector body is attached to a holder body shiftable within a range that the connector portion of the holder device can follow the connector portion of the hard disk device and a range that the guide projection can be guided by the recess portion. | 2012-12-06 |
20120309223 | GUIDE ELEMENT FOR A CONNECTOR DEVICE - Guide element ( | 2012-12-06 |
20120309224 | ELECTRICAL CONNECTOR HAVING CRIMP-MOUNTED ELECTRICAL TERMINALS - In accordance with one embodiment, an electrical connector includes a connector housing, and at least one electrical terminal supported by the connector housing. The electrical terminal defines a mating portion and a mounting portion, the mounting portion carrying a pair of crimp members having crimp teeth configured to pierce through a flex cable when crimped so as to mount the flex cable to the mounting portion of the electrical terminal. | 2012-12-06 |
20120309225 | ELECTRICAL CONNECTOR HAVING CRIMP-MOUNTED ELECTRICAL TERMINALS - In accordance with one embodiment, an electrical connector includes a connector housing, and at least one electrical terminal supported by the connector housing. The electrical terminal defines a mating portion and a mounting portion, the mounting portion carrying a pair of crimp members having crimp teeth configured to pierce through a flex cable when crimped so as to mount the flex cable to the mounting portion of the electrical terminal. | 2012-12-06 |
20120309226 | COAXIAL CABLE CONNECTOR - A coaxial cable connector includes a shell that extends between a mating end and a cable end. The cable end is configured to be terminated to an end of a coaxial cable. A dielectric insert is held within the shell. An inner contact is held within the dielectric insert. The inner contact has a spring loaded pin that is configured to be spring loaded against a center conductor of the coaxial cable. | 2012-12-06 |
20120309227 | MULTI-CONDUCTOR CABLE CONNECTOR HAVING MORE THAN ONE COAXIAL CABLE AND METHOD THEREOF - A multi-conductor cable connector is provided, the connector including a cable connection portion, wherein the cable connection portion receives a prepared multi-conductor cable having a plurality of conductive strands concentrically sharing a common central axis, and a multi-contact portion coupled to the cable connection portion, the multi-contact portion having a plurality of contacts non-concentrically aligned with the cable connection portion. Furthermore, an associated method is also provided. | 2012-12-06 |
20120309228 | CONNECTOR PROTECTION STRUCTURE AND PRODUCTION METHOD THEREFOR - A connector protection structure includes a connector electrically connected to an electric wire and a protector protecting the connector by surrounding the connector. The protector is formed of a protection material that includes a base material and a binder material having a melting point lower than that of the base material, and is joined in a joint portion thereof by cooling and solidifying the melted binder material. The connector is accommodated in an inner space formed in an inner surface of the protector. The binder material in the inner surface and outer surface is melted, cooled, and solidified such that the inner surface of the protector is harder than the outer surface of the protector. | 2012-12-06 |
20120309229 | PROJECTOR HOLDER AND PROJECTOR SYSTEM HAVING THE SAME - A holder to hold a projector includes a support. One side of the projector is capable of being attracted by a magnet. The support includes a base board and a supporting board connected to the base board. The base board is to be supported by a supporting surface. The support further includes a first magnet fixed on the supporting board to attract the side of the projector, for adjustably and magnetically supporting the projector on the supporting board. | 2012-12-06 |
20120309230 | CABLE COUPLING CONNECTOR - A cable coupler including an external cylinder mechanism having an inner conductor for electrically connecting the inner conductor itself to the outer conductors of the shielded cables, an outer conductor having a larger diameter than the inner conductor, a gap portion disposed between the inner conductor and the outer conductor, and capacitors arranged in the gap portion, for electrically connecting between the outer conductor and the inner conductor, an inner potion of the external cylinder mechanism being able to be opened and closed along a longitudinal direction, an internal coupling mechanism placed inside the inner conductor and having connecting pins for holding the core wires of the shielded cables, for electrically connecting between the core wires of the shielded cables, and a base for holding the external cylinder mechanism and for electrically connecting the external cylinder mechanism to an external conductor. | 2012-12-06 |
20120309231 | DUAL-PERSONALITY EXTENDED USB PLUGS AND RECEPTACLES USING WITH PCBA AND CABLE ASSEMBLY - A USB plug receptacle includes a connector substrate having a tongue portion having a first set of electrical contact pins disposed on a top surface of the tongue portion, a second set of a plurality of electrical pins disposed on a bottom surface of the tongue portion, a third set of electrical contact pins disposed on an opposite end of the tongue portion. The USB plug receptacle further includes a metal case made of a sheet of electrically conductive metal plate by blanking the sheet into a generally tubular shape to receive and enclose the connector substrate. When the connector substrate is inserted into the metal case, the third set of electrical contact pins are exposed outside of the metal case and the third set of electrical contact pins can be mounted on first and second sets of electrical contact pads of a printed circuit board assembly. | 2012-12-06 |
20120309232 | Inline Fuse Holder Assembly - An inline fuse holder assembly encloses a fuse assembly including a fuse, and first and second wire connectors at respective first and second longitudinal ends of the fuse assembly. The inline fuse holder assembly includes first and second components including respective first and second connectors. The first and second connectors include mateable, non-releasable connection components configured to connect the first and second components to one another and form a substantially waterproof, non-releasable connection upon connection. The first and second components together define an enclosure for enclosing an entirety of the fuse assembly when the first and second fuse holder components are connected to one another. | 2012-12-06 |
20120309233 | CIRCUIT MEMBER WITH ENHANCED PERFORMANCE - An electrical connector includes a dielectric housing with a plurality of filtering modules therein. Each filtering module has a housing and a magnetics assembly including transformer cores with wires wrapped therearound. An array of pins extend from the module housing for connection to the wires. A plurality of tails extend from the module housing for interconnection to a circuit board upon which the connector may be mounted. An interconnection is provided between the pins and tails that may include filtering or other signal modifying circuitry. A circuit member having an enhanced layout is also provided for use in or upon which the connector may be mounted. | 2012-12-06 |
20120309234 | CONNECTOR - A connector includes a one-piece rubber plug ( | 2012-12-06 |
20120309235 | Board-to-board connector - A cable connector comprises a first connector and a cable. The first connector comprises a first connector body and a first circuit board. The first circuit board has first and second surfaces, a plurality of first connection points installed on the first surface, and soldering portions of the first conductive terminals correspondingly soldered to the first connection points. The first circuit board has a plurality of second connection points on the first and second surfaces, and the cable's conducting wires are correspondingly soldered to each second connection point. The first connector comprises a first coating partially encasing the first circuit board. The first coating comprises first and second portions. The first portion encases one side of the first surface in order to encase the first connection points. The second portion encases the edge of the first and second surfaces in order to encase the second connection points. | 2012-12-06 |
20120309236 | FILTERING ASSEMBLY AND MODULAR JACK USING SAME - A magnetic jack assembly includes a housing, circuit boards, shields and various filtering components. Multiple aspects of the assembly enhance manufacturability and facilitate automated manufacturing. | 2012-12-06 |
20120309237 | Feedthrough Wire Connector for Use in a Medical Device - A feedthrough filter capacitor assembly comprising a terminal pin connector is described. The terminal pin connector is designed to facilitate an electrical connection between the terminal pin comprising a multitude of compositions to a circuit board of an implantable medical device. The terminal pin connector comprises a clip portion positioned within a connector housing. The connector clip mechanically attaches to the terminal pin of the feedthrough and an exterior surface of the connector housing electrically contacts the circuit board, creating an electrical connection therebetween. The connector housing comprises a material that is conducive to a weld or solder attachment process to the circuit board. The feedthrough filter capacitor assembly is particularly useful for incorporation into implantable medical devices such as cardiac pacemakers, cardioverter defibrillators, and the like, to decouple and shield internal electronic components of the medical device from undesirable electromagnetic interference (EMI) signals. | 2012-12-06 |
20120309238 | Terminal Module for Electric Connector - A terminal module used in an RJ45 female connector in which the first transmission terminal includes a triangle support portion having a downward bent downwardly extended from the bonding portion and an upward bent connected with the lower end thereof to the downward bent and the upper end thereof to the contact portion. The eighth transmission terminal includes a support portion obliquely upwardly from the bonding portion and terminating in the contact portion. Further, the contained angle defined between the inner end of the bonding portion of the eighth transmission terminal and the support portion and the contained angle defined between the contact portion of the eighth transmission terminal and the support portion are arc guide angles. | 2012-12-06 |
20120309239 | PROTECTIVE CAP FOR PREVENTION OF OBLIQUE TIGHTENING OF FUSIBLE LINK DIRECTLY MOUNTED ON BATTERY - A protective cap protects a fusible link formed with a connection hole. A protective cap part is disposed on an extension of an axis of a stud bolt of a power source. The protective cap part is formed with a tool insertion hole into which a tool used for fitting a nut with the stud bolt is inserted. The stud bolt is inserted through the connection hole. A nut holder is provided inside the protective cap part. The nut holder holds the nut in a state where an axis of the nut is parallel to the axis of the stud bolt. | 2012-12-06 |
20120309240 | ELECTRICAL RECEPTACLE TERMINAL - The present invention discloses an electrical receptacle terminal, comprising a contact portion being in electrical connection with a male terminal and a connecting portion being in electrical connection with an electrical cable, wherein the contact portion comprises: an housing having a bottom wall, a right wall, a left wall and a top wall; and an elastic contact member located in the housing and connected to the top wall of the housing through a suspension member. According to the present invention, the elastic contact member is suspended on the top wall of the housing through a suspension member. Since the suspension member that is connected to the elastic contact member itself exhibits certain flexibility, the elastic contact member and the male terminal inserted into the elastic contact member can do slight motion along with the suspension member in the front-rear direction. Thus, there is no relative slight motion between the elastic contact member and the male terminal inserted into the elastic contact member. | 2012-12-06 |
20120309241 | Joint Commonality Submersible (JCS) - An underwater propulsion device includes a number of modules allowing it to be used in a range of configurations including a tow/pull type scooter | 2012-12-06 |
20120309242 | HYBRID PROPULSION SYSTEM FOR A VESSEL - Hybrid propulsion system for a vessel including main engines connected to propulsion to propulsion means via transmission devices and connection devices for connection and disconnection, where the system includes one or more electrical machines arranged to the transmission device(s) via connection device for connection and disconnection of the from the transmission device, and one or more hybrid shaft generators, which is/are arranged between the electrical machine and one or more switchboards for the vessel. | 2012-12-06 |
20120309243 | Propulsion protection device - The Propulsion Protection Device includes rigid inclined deflection surfaces in the configuration of three or four rails/bars affixed, permanently and/or removable, both to the transom and to the bottom of a hull of a watercraft. The unit is aligned parallel with the longitudinal axis of the watercraft. At the forward most attachment point, approximately mid-point between the stern and bow, the rails/bars are flush and smooth with the hull/bottom. At the rear/transom, the rails/bars extend below the propeller, beyond the arc of the propeller, and rigid engine parts. There is a calculated inclination along the length of the rail/bars, thereby creating a deflection effect. | 2012-12-06 |
20120309244 | ELECTROLYTE MATERIAL - This electrolyte material for an electrically controllable device having variable optical/energy properties is in the form of a self-supported layer intended to be placed between two layers of electroactive material, and comprises or consists of a matrix which is capable of maintaining the mechanical strength thereof and in which are inserted ionic charges capable of allowing, under the action of a current, oxidation and reduction reactions in adjacent layers of electroactive material. The ionic charges are within the matrix in the solubilized state, solubilized by a solubilization liquid (L). The matrix is chosen to provide the percolation pathway for the ionic charges. According to the invention, the matrix is based on a textile sheet (TS) or on a stack of sheets including at least one textile sheet (TS), the textile sheet or the stack being translucent or transparent once impregnated by the liquid (L) that has solubilized the organic compounds and the ionic charges, and being capable of retaining at least a portion of its integrity once impregnated by the liquid (L). | 2012-12-06 |
20120309245 | POROUS, LOW DENSITY NANOCLAY COMPOSITE - Disclosed are porous, low density nanoclay composites that exhibit highly homogeneous microcellular morphology and methods for forming the nanocomposites. The nanocomposites include a three-dimensional matrix having a non-lamellar, generally isotropic cellular structure with little or no macroscopic pores. The nanocomposites also include a gel that may be a noncovalently cross-linked, thermoreversible gel. The nanocomposites may include a binder and/or fibrous reinforcement materials. The nanocomposites may be formed according to a freeze-drying process in which ice crystal growth is controlled to prevent formation of macroscopic pores in the composite materials. | 2012-12-06 |
20120309246 | CURABLE BIOPOLYMER NANOPARTICLE LATEX BINDER FOR MINERAL, NATURAL ORGANIC, OR SYNTHETIC FIBER PRODUCTS AND NON-WOVEN MATS - A curable aqueous binder composition includes a dispersion of biopolymer particles, optionally with and an inter-particle crosslinking agent, for use in the formation of composite materials such as mineral, natural organic, or synthetic fiber products, including mineral fiber insulation, non-woven mats, fiberglass insulation and related glass fiber products, and wood based products, and construction materials. In an application of the curable aqueous composition to making fiberglass insulation, the composition may be blended with a second resin which may be a non-formaldehyde resin. In an application of the composition to making fiberglass roofing shingles, the biopolymer particles may be mixed into a formaldehyde based resin during or after the polymerization of the resin. | 2012-12-06 |
20120309247 | METHOD FOR THE PRODUCTION OF A HYBRID PART, AND COVER FOR USE IN THE PRODUCTION - In a method of making a hybrid part, a reinforcement element of fiber composite is placed upon a base member in a press tool. A strip-shaped cover having a resin absorbing absorbent layer is withdrawn from a supply unit and placed in the press tool between the reinforcement element and the press tool. As the base member and the reinforcement element are compressed with one another and joined any resin issuing out from the reinforcement element is absorbed by the absorbent layer of the cover and kept away from soiling the press tool or the base member. After the compression process, the cover is removed. | 2012-12-06 |
20120309248 | MULTIAXIAL NON-CRIMP FABRICS HAVING POLYMER NON-WOVENS - A non-crimp fabric includes at least two superimposed layers made from multifilament reinforcing yarns arranged parallel to each other, and at least one layer made from a non-woven made from thermoplastic polymer material on and/or between the layers made from multifilament reinforcing yarns, wherein the non-woven includes a first polymer component and a second polymer component whose melting temperatures lie below the melting or decomposition temperature of the reinforcing yarns. The first polymer component has a lower melting temperature than the second polymer component, and the first polymer component is soluble in epoxy matrix resins, cyanate ester matrix resins, benzoxazine matrix resins, or mixtures thereof. The second polymer component is not soluble in epoxy matrix resins, cyanate ester matrix resins, benzoxazine matrix resins, or mixtures thereof. A preform is made from the non-crimp fabric. | 2012-12-06 |
20120309249 | MULTI-LAYER FABRIC AND PROCESS FOR MAKING THE SAME - The invention provides a multi-layer fabric which is comprised of a first layer and a second layer which are adhered to each other, wherein the first layer comprises an elastic fabric of fibers of a polyolefin material which elastic fabric has an ultimate elongation of at least 500%; and wherein the second layer comprises a bonded nonwoven fabric of polyolefin staple fibers in which fiber-to-fiber bonds are present, which nonwoven fabric has an elongation in the cross machine direction of at least 130%, and wherein the polyolefin staple fibers have an elongation of at least 350%. The invention further provides processes for making the multi-layer fabric, an article or article component comprising the multi-layer component, and the use of the multi-layer fabric in diaper or training pant applications. | 2012-12-06 |
20120309250 | COMPOSITE INORGANIC/POLYMER FIBERS AND INORGANIC FIBRILS FABRICATED FROM SHEARED SOLUTIONS - Nanofibers are fabricated by introducing a mixture of a polymer solution and inorganic precursor into a dispersion medium and shearing the mixture. Liquid strands, streaks or droplets of the mixture are spun into elongated fibers that include inorganic fibrils. The resulting composite inorganic/polymer fibers may be provided as an end product. Alternatively, the polymer may be removed to liberate the inorganic fibrils, which may be of the same or smaller cross-section as the polymer fibers and may be provided as an end product. | 2012-12-06 |
20120309251 | Method for Retrofitting Flashlights And System Thereof - A process and system for taking an ordinary existing flashlight and converting it to an advanced capability flashlight wherein the flashlight can be controlled remotely is disclosed herein. The system employs a relatively low cost method and takes advantage of modular characteristics of existing flashlights. The system additionally employs programmable electronics to the flashlight covered by a polyurethane protection layer to provide functionality in extreme conditions. Different head lamps can be easily switched out to an individual flashlight employing more LED lamps and different wavelengths of light as desired by a user. Additionally, a remote control device is disclosed, wherein the device can further be configured to a rail system of a firearm. | 2012-12-06 |
20120309252 | METHOD OF MANUFACTURING ORGANIC EL DISPLAY PANEL - The volume per drop of the drops ejected by each nozzle is detected. It is then determined whether a volume of drops equal to or greater than a target value can be ejected by causing one or more first nozzles to eject drops, the detected volume per drop of the first nozzles falling within a first range of a preset value. When the determination is affirmative, the first nozzles are selected for ejection of drops. When the determination is negative, the first nozzles and one or more second nozzles are selected for ejection of drops. The detected volume per drop of the second nozzles falls within a second range of the present value, where the second range is greater than the first range. | 2012-12-06 |
20120309253 | METHOD FOR MANUFACTURING IMAGE DISPLAY ELEMENT - A method for manufacturing an image display element including: a front panel; a back panel facing the front panel; plural pixels arranged in a matrix between the panels, and to be selected to be in a display or non-display state; and plural electrodes for controlling the pixels, the panels being bonded with the pixels and the electrodes interposed therebetween, and the electrodes being connected to a driving control circuit via metal wires, includes a first step of performing dicing from the back side of the opposing surface from the front panel, and forming a groove part such that electrode terminals connected to the electrodes are exposed between adjacent plural pixel lines, with the back panel bonded thereto, and a second step of forming the metal wires so as to be connected to the electrode terminals exposed at the groove part. | 2012-12-06 |
20120309254 | Polymer Dispersed Liquid Crystal Display and Method of Fabricating the Same - There are provided a polymer dispersed liquid crystal (PDLC) display not using a backlight unit and a method of fabricating the same. The PDLC display comprises a rear substrate over which a thin film transistor (TFT), a first electrode, and a second electrode are formed, a front substrate apart from the rear substrate and having a first black matrix formed thereon corresponding to a region where the TFT is formed, a PDLC layer disposed below the first black matrix and formed between the front and rear substrates, a light source formed on one side of the PDLC layer and configured to provide light to the side of the PDLC layer, and a first reflection plate formed on the other side of the PDLC layer and configured to reflect light incident via the PDLC layer. | 2012-12-06 |
20120309255 | METHOD FOR MANUFACTURING A LIGHT-EMITTING DEVICE - A method for manufacturing a light-emitting device ( | 2012-12-06 |
20120309256 | PLUSH TOY COMPUTER TABLET CARRIER - A plush toy tablet computer accessory is provided for storing and supporting a tablet computer. The plush toy tablet computer accessory includes a speaker system connectable to a tablet computer and a detachable carrying case for storing the tablet computer while not in use. | 2012-12-06 |
20120309257 | Interconnectable and Transformable Toy Building Element - A transformable toy building element which is interconnectable with other toy building elements is provided. The transformable toy building element includes at least one coupling connector and a plurality of movable members. Manipulation of the movable members can transform the transformable toy building element into at least one interconnectable toy figure. | 2012-12-06 |
20120309258 | FOLDED BLOCK STRUCTURE KIT AND METHOD FOR MAKING - A kit for creating a folded block structure comprises a set of blanks to create different shaped folded blocks without the need to use adhesive or cutting tools. Each blank includes sides, the sides having edges, the edges comprising side edges, tab edges and flap edges. The sides are joined to one another along adjacent side edges. Folds lines are at the side edges. The tab extends from each of the tab edges. Tab fold lines are at the tab edges. A flap extends from each of the flap edges. Flap fold lines are at the flap edges. A tab slit at or near each of the flap folds lines is configured for receipt of corresponding ones of the tabs. Notches may be formed at the ends of the tabs. Adhesive elements can be used to adhere folded blocks to one another to create a folded block structure. | 2012-12-06 |
20120309259 | Magnetic Toy Block - A toy block includes a body having external faces. A compartment is located behind each of the external faces and houses a magnet located freely within the compartment and adapted to turn upon magnetic interaction with another magnet external of the body so as to align attractively therewith. Two such toy blocks can be brought together face-to-face in any orientation and the magnet of one block will turn automatically into N-S alignment with a magnet of the other block so that the blocks attract and connect. | 2012-12-06 |