48th week of 2012 patent applcation highlights part 15 |
Patent application number | Title | Published |
20120298913 | WATER-ABSORBENT RESIN PARTICLE, METHOD FOR PRODUCTION THEREOF, AND ABSORBENT MATERIAL USING THE SAME - A method for production of a water-absorbent resin particle which is excellent in a particle strength, and in which even after mechanical impact, a particle diameter retaining rate and a retaining rate of water absorption capacity under pressure are high, and an absorbent material using the same particle. The method includes the steps of polymerizing a water-soluble ethylenic unsaturated monomer using a water-soluble radical polymerization initiator, optionally in the presence of a crosslinking agent, to obtain a water-absorbent resin particle precursor, adding a post-crosslinking agent to crosslink a surface of the particle, adding an amorphous silica particle and adjusting the resulting particle to a moisture content of less than 10%, and subsequently adding moisture to adjust a final moisture content of the resulting particle to 10 to 20%. | 2012-11-29 |
20120298914 | Method for Treating and Conditioning Tailings - A sludge or slurry physical stabilizing method combines coarse particles with a slurry of fine particles to generate a composite slurry having a substantially predetermined ratio of coarse particles to fine particles. The composite slurry can then be diluted, flocculated and/or dewatered. Superabsorbent polymer (SAP) is mixed in with the dewatered composite slurry in an amount effective to produce a shear stable, non-segregating conveyable composition of sufficient strength to enable pumping, transport and placement at a mining site or tailings disposal site. | 2012-11-29 |
20120298915 | PROCESS FOR PRODUCING WATER-ABSORBING RESIN POWDER - Provided is a process for producing a water-absorbing resin powder which contains a given amount of water added thereto, has a low dust content, and has high material properties. When a water-absorbing resin powder which has undergone surface crosslinking is produced on an industrial scale, various problems concerning production are eliminated and a long-term stable operation is possible without causing a deterioration in the material properties of the resin. Even when the process is continued over a long period, the material properties are stabilized (decrease in standard deviation) or improved (improvement in AAP). The process for producing a water-absorbing resin comprises, in the following order, a first classification step for classifying a water-absorbing resin, a surface crosslinking step after the classification, a water addition step for adding water to the water-absorbing resin powder after or during the surface crosslinking, a second classification step, and a conveying step. | 2012-11-29 |
20120298916 | POLYMERIZABLE COMPOUNDS AND LIQUID CRYSTAL MEDIA - The invention relates to 1,1-disubstituted cyclohexane derivatives containing one or more polymerisable groups, and to liquid-crystalline media comprising at least one compound of the formula I. At least one of the polymerisable groups is located at the geminally substituted position of the cyclohexane ring. The compounds are suitable for the stabilisation of liquid-crystalline phases. Examples of polymer-stabilised blue phases are indicated. | 2012-11-29 |
20120298917 | LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - Provided is an AM device containing a liquid crystal composition satisfying at least one of characteristics such as a high maximum temperature of a nematic phase, a low minimum temperature of the nematic phase, a small viscosity, a large optical anisotropy, a large positive dielectric anisotropy, a large specific resistance, a high stability to ultraviolet light and a high stability to and heat, or having a suitable balance regarding at least two of the characteristics, and the AM device having a short response time, a large voltage holding ratio, a large contrast ratio, a long service life and so forth; wherein a liquid crystal display device contains a liquid crystal composition having a positive dielectric anisotropy and containing a specific compound having a large positive dielectric anisotropy as a first component and a specific compound having a small viscosity as a second component. | 2012-11-29 |
20120298918 | MIXTURE OF LIQUID-CRYSTAL COMPOUNDS, SYSTEM OF THREE LIQUID-CRYSTAL MIXTURES AND THEIR USE - Three organic compounds mixtures of liquid-crystal properties, which when mixed together in a precisely determined weight ratio, may show an ability to form thermo-optically active mesophases of established, narrow range thermooptical transitions separation, every 0.5° C., in the temperature range: from 31.8° C. to 32.8° C., from 32.8° C. to 33.8° C., and from 33.8° C. to 34.8° C. and system including these mixtures. The use of these mixtures and the system containing the above mentioned mixtures for colorimetric detection of temperature differentiation on the surface of biological objects in a narrow range of temperatures | 2012-11-29 |
20120298919 | METHOD OF MANUFACTURING BETA-SIALON - A method of manufacturing β-SiAlON represented by a general formula Si | 2012-11-29 |
20120298920 | METHOD FOR BIOMASS GASIFICATION IN A FLUIDIZED BED - With a method for the gasification of a biomass in a fluidized bed, wherein the biomass is first pre-dried and passed to the fluidized bed gasifier, subsequently the raw gas from the gasifier impacts a recirculation cyclone and subsequently at least one raw gas cooler, the yield of such a method of procedure is supposed to be improved and the system costs are supposed to be lowered. | 2012-11-29 |
20120298921 | METHOD AND SYSTEM FOR SUPPLYING THERMAL ENERGY TO A THERMAL PROCESSING SYSTEM FROM THE GASIFICATION OF DRY, CARBON-CONTAINING RAW MATERIALS, FOLLOWED BY OXIDATION, AND INSTALLATION FOR OPERATING THIS SYSTEM - The invention comprises a thermal power supply process for a treatment system for raw material. It also refers to a system operating this process and a facility operating said system. The process comprises steps of gasification of dry raw material containing carbon (MPCS) in a first reactor by a gaseous flow of gasification containing CO | 2012-11-29 |
20120298922 | PROCESS AND BURNER FOR PRODUCING SYNTHESIS GAS - This invention relates to the production of synthesis gas by partial oxidation of liquid or gaseous, carbonaceous fuel in the presence of an oxygen-containing oxidant, wherein the fuel, the oxidant and a moderator are separately supplied to a burner and wherein the fuel and the moderator are mixed in a mixing chamber of the burner, before they are brought in contact with the oxidant. To reduce the load of the burner in particular during operation with transient conditions, the oxidant is centrally introduced through an outlet opening of the burner into a combustion chamber and the mixture of fuel and moderator is introduced through the outlet opening into the combustion chamber concentrically around the oxidant. | 2012-11-29 |
20120298923 | Energy-Saving Anti-Corrosive Metal Film Composition and Manufacturing Method for the Same - The present invention relates to an energy-saving anti-corrosive metal film composition and manufacturing method for the same. The energy-saving anti-corrosive metal film composition includes: at least one metal powder selected from the group consisting of aluminum, magnesium, and alloys thereof, having particle size of 5-10 um; a first sol-gel resin selected from the group consisting of zirconium tetra-n-butanolate, zirconium butoxide, isopropyl titanate, and mixtures thereof; a second sol-gel resin selected from the group consisting of tris[3-(trimethoxysilyl)propyl] isocyanurate, gamma-meta-acryloxypropyl trimethoxysilane and n-phenyl-gamma-aminopropyltrimetoxysilane, and mixtures thereof; and a solvent. | 2012-11-29 |
20120298924 | METHOD OF PRODUCING THERMOELECTRIC MATERIAL - A process for manufacturing a thermoelectric material having a plurality of grains and grain boundaries. The process includes determining a material composition to be investigated for the thermoelectric material and then determining a range of values of grain size and/or grain boundary barrier height obtainable for the material composition using current state of the art manufacturing techniques. Thereafter, a range of figure of merit values for the material composition is determined as a function of the range of values of grain size and/or grain boundary barrier height. And finally, a thermoelectric material having the determined material composition and an average grain size and grain boundary barrier height corresponding to the maximum range of figure of merit values is manufactured. | 2012-11-29 |
20120298925 | ELECTROSTATIC DISCHARGE POLYMER FILLER CONTAINING CARBON NANOTUBE ENCLOSED WITH THERMOPLATIC RESIN LAYER AND MANUFACTURING METHOD THEREOF - The present invention relates to an electrically conductive polymer filler for preparing electrically conductive plastics and a preparation method thereof. More specifically, the invention relates to an electrically conductive polymer filler comprising carbon nanotube (CNT) microcapsules including carbon nanotubes encapsulated with a thermoplastic resin layer, and to a preparation method and an electrically conductive thermoplastic resin comprising the electrically conductive polymer filler. | 2012-11-29 |
20120298926 | COMPOSITE MATERIALS, PRODUCTION THEREOF AND USE THEREOF IN ELECTRICAL CELLS - The present invention relates to composite materials comprising a reaction product of (A) at least one organic polymer, (B) sulfur, (C) carbon in a polymorph which comprises at least 60% sp | 2012-11-29 |
20120298927 | ELECTRICALLY CONDUCTIVE ADHESIVES COMPRISING BUCKY PAPER AND AN ADHESIVE RESIN - An electrically conductive adhesive sheet for joining structural elements, the adhesive sheet comprising Bucky paper impregnated with an adhesive resin is provided. A method of forming an electrically conductive joint between structural elements and a process of making an electrically conductive adhesive sheet for joining structural elements are also provided. | 2012-11-29 |
20120298928 | METHOD OF PRODUCING THERMOELECTRIC MATERIAL - A thermoelectric material is provided. The material can be a grain boundary modified nanocomposite that has a plurality of bismuth antimony telluride matrix grains and a plurality of zinc oxide nanoparticles within the plurality of bismuth antimony telluride matrix grains. In addition, the material has zinc antimony modified grain boundaries between the plurality of bismuth antimony telluride matrix grains. | 2012-11-29 |
20120298929 | REDUCING AGENT COMPOSITION FOR THE CONDUCTIVE METAL PASTE - This is to provide reducing agent composition for a conductive metal paste which improves the pot life of the conductive metal paste and controls fluctuation of a connection resistance value, and a process for preparing the same, and a conductive metal paste. | 2012-11-29 |
20120298930 | NANOSTRUCTURE COMPOSITIONS, COATINGS, AND FILMS - Stable multicomponent coating systems with superior coatability and stability are disclosed. Such stable coating systems comprising nanostructures, cellulosic polymers, and blocked isocyanates provide coatings and films exhibiting superior surface resistivity and crosslinking. | 2012-11-29 |
20120298931 | VISCOSITY MODIFIER COMPOSITIONS AND METHODS - Disclosed are conductive coatings that exhibit improved clarity, uniformity, and mechanical strength. Such coatings comprising volatile viscosity modifiers are useful for electronics applications. | 2012-11-29 |
20120298932 | METAL COMPLEX, COMPOSITION COMPRISING SAME AND LIGHT-EMITTING ELEMENT USING SAME - The invention provides a metal complex having a structure represented by the following formula (1): | 2012-11-29 |
20120298933 | LASER-MARKING ADDITIVE - This invention relates to a laser-marking additive wherein the laser-marking additive comprises a bismuth containing compound and a functionalized polymer having 0.01 to 50 wt % of functional groups, in which the weight percentage is based on the total amount of functionalized polymer and bismuth containing compound. The invention further relates to a method for preparation of such laser-marking additive, a laser-markable composition comprising such laser-marking additives and preparation thereof and molded parts comprising the laser-markable composition, as well as films made from the laser-markable composition. | 2012-11-29 |
20120298934 | TELESCOPIC STRUCTURE AND LIFTING SYSTEM - A telescopic structure formed by various bodies that are raised by a raising system which comprises a multitude of base pieces ( | 2012-11-29 |
20120298935 | System for Transporting Shipping Containers - A system for transporting shipping containers using a tractor with a first support assembly attached to its fifth wheel, and a wheeled, second support assembly. Both the front and rear assemblies include cargo-container-engaging vertical frames that are raised and lowered by pivoting main cylinders. As the main cylinders raise the vertical frames and the container to which the vertical frames are secured to, two locking arms telescope with the vertical arm to hold the raised container in position. The second support assembly may be self-propelled for maneuvering into position with respect to the container or may be manually pulling short distances with by hand. | 2012-11-29 |
20120298936 | LIFT ASSEMBLY HAVING A SPLIT TROLLEY - A trolley for a lift assembly is disclosed. The trolley includes a drive portion and a lift portion separable from the drive portion. The lift portion includes one or more fittings configured to hold one or more wire ropes for raising and lower a platform hitched to the wire ropes. The drive portion is connectable to a drive assembly to move the drive portion and lift portion along a lift stroke. Pairs of trolleys are interconnected via tension lines or wires connected to the lift portions of the trolleys. The lift portions are configured to move independent of the drive portions through lift provided via the interconnection of the lift portions through the tension lines or wires. | 2012-11-29 |
20120298937 | MULTIDIMENSIONAL POSITIONING SYSTEM AND METHOD - A multidimensional positioning system including a first block assembly including a fixed first block portion and a moveable second block portion. A first travel cable is arranged on pulleys operatively connected to the first block portion, the second block portion and a predetermined location. The first travel cable is affixed to a base supporting a load. A first travel drive is operatively connected to the first travel cable to facilitate movement of the base in a second travel direction. A first lift drive is arranged and disposed to provide movement of the second block portion relative to the first block portion to selectively alter the length of the first travel cable in a working space and selectively move the base in a first travel direction. | 2012-11-29 |
20120298938 | WINCH ASSEMBLY - A winch assembly is described and shown herein. The winch assembly may include a first housing member having a first retaining member formed therein and a second housing member having a second retaining member formed therein, the second housing member secured to the first housing member forming a winch housing. The winch assembly may further include a drive system generally positioned within the winch housing, and a winch drum operatively coupled with the drive system and rotationally secured with the first and second retaining members. | 2012-11-29 |
20120298939 | Grain Silo Safety Apparatus - An apparatus for rescuing persons and objects from a grain storage bin or similar structures. The apparatus is made up of a bottom frame, a hoisting frame, and at least one rear bracing member. The hoisting frame has a top horizontal member with at least one attachment location supporting a safety mechanism and a plurality of legs attached to the top horizontal member. The plurality of legs are rotatably attached to the bottom frame. The apparatus has at least one rear bracing member rotatably attached to the bottom frame and securably attached to an anchoring feature. | 2012-11-29 |
20120298940 | RESCUECYLINDER - The present invention relates to a portable rescue cylinder ( | 2012-11-29 |
20120298941 | METHOD FOR PRODUCING A TRACK AND TRACK FOR A TRACK LIFTING DEVICE - The invention relates to a method for producing a track ( | 2012-11-29 |
20120298942 | Security Device and System - A strainer for straining a length of material, the strainer including a tensioning device configured to tension a length of material between the strainer and an object, characterised in that the strainer includes a conductive component configured to contact the length of the material when held by the tensioning device, and wherein the conductive component includes an attachment portion for an external conductive link to the strainer. This invention also relates to a security system and its method of preparation using the strainer as described herein. | 2012-11-29 |
20120298943 | Composite Guardrail Posts and Composite Floor I-Joist - The first product is Composite Guardrail Post (CGP). CGP is designed overcome all these drawbacks by substituting standard timber posts with metal jacket composite posts. The second product is Composite Floor Joist (CFI). The current invention (CFI) is similar to TJI in concept, but uses all composite material for both flanges and webs. Also, the connections between flange and web are much stronger, enabling the development of composite actions to the fullest extent. | 2012-11-29 |
20120298944 | Fence Gate Extender - A fence gate having a bottom extender section comprising a frame having vertical and horizontal interconnected structural members with a planar extender panel slidingly attached to the lower portion of the frame for movement within a plane parallel to the plane of the frame and motive means connected to the panel for moving it toward or away from the ground in order to open or close the space between the ground and the lower structural member of the gate. | 2012-11-29 |
20120298945 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A nonvolatile semiconductor memory device of the present invention includes a substrate ( | 2012-11-29 |
20120298946 | Shaping a Phase Change Layer in a Phase Change Memory Cell - A phase change memory cell includes a phase change layer of a phase change material on a semiconductor body. A hard mask structure is formed on the phase change layer and a resist mask is formed on the hard mask structure. A hard mask is formed by shaping the hard mask structure using the resist mask. The phase change layer is shaped using the hard mask. The resist mask is removed before shaping the phase change layer. | 2012-11-29 |
20120298947 | LOW TEMPERATURE P+ SILICON JUNCTION MATERIAL FOR A NON-VOLATILE MEMORY DEVICE - A method for forming a non-volatile memory device includes forming a dielectric material overlying a semiconductor substrate, forming a first wiring structure overlying the first dielectric material, depositing an undoped amorphous silicon layer, depositing an aluminum layer over the amorphous silicon layer at a temperature of about 450 Degrees Celsius or lower, annealing the amorphous silicon and aluminum at a temperature of about 450 Degrees Celsius or lower to form a p+ polycrystalline layer, depositing a resistive switching material comprising an amorphous silicon material overlying the polycrystalline silicon material, forming a second wiring structure comprising a metal material overlying the resistive switching material. | 2012-11-29 |
20120298948 | NANOWIRE FET HAVING INDUCED RADIAL STRAIN - An intermediate process device is provided and includes a nanowire connecting first and second silicon-on-insulator (SOI) pads, a gate including a gate conductor surrounding the nanowire and poly-Si surrounding the gate conductor and silicide forming metal disposed to react with the poly-Si to form a fully silicided (FUSI) material to induce radial strain in the nanowire. | 2012-11-29 |
20120298949 | Graphene/Nanostructure FET with Self-Aligned Contact and Gate - A field effect transistor (FET) includes a substrate; a channel material located on the substrate, the channel material comprising one of graphene or a nanostructure; a gate located on a first portion of the channel material; and a contact aligned to the gate, the contact comprising one of a metal silicide, a metal carbide, and a metal, the contact being located over a source region and a drain region of the FET, the source region and the drain region comprising a second portion of the channel material. | 2012-11-29 |
20120298950 | LIGHT EMITTING DEVICES WITH BUILT-IN CHROMATICITY CONVERSION AND METHODS OF MANUFACTURING - Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device. | 2012-11-29 |
20120298951 | Optoelectronic Semiconductor Body with a Quantum Well Structure - An optoelectronic semiconductor body is provided, which contains a semiconductor material which is composed of a first component and a second component different from the first component. The semiconductor body comprises a quantum well structure, which is arranged between an n-conducting layer ( | 2012-11-29 |
20120298952 | SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR LAYER, AND METHOD FOR FORMING NITRIDE SEMICONDUCTOR LAYER - According to an embodiment, a semiconductor light emitting device includes a foundation layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The foundation layer has an unevenness having recesses, side portions, and protrusions. A first major surface of the foundation layer has an overlay-region. The foundation layer has a plurality of dislocations including first dislocations whose one ends reaching the recess and second dislocations whose one ends reaching the protrusion. A proportion of a number of the second dislocations reaching the first major surface to a number of all of the second dislocations is smaller than a proportion of a number of the first dislocations reaching the first major surface to a number of all of the first dislocations. A number of the dislocations reaching the overlay-region of the first major surface is smaller than a number of all of the first dislocations. | 2012-11-29 |
20120298953 | LIGHT EMITTING DEVICE - A light emitting device according to the embodiment includes a substrate having first and second surfaces opposite to each other and formed on the first surface thereof with a plurality of convex parts; and a light emitting structure formed on the first surface of the substrate and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers. The light emitting structure has holes corresponding to the convex parts of the substrate. | 2012-11-29 |
20120298954 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - There are provided a semiconductor light emitting device and a manufacturing method of the same. The semiconductor light emitting device includes a light emitting structure including first and second conductive semiconductor layers with an active layer interposed therebetween; first and second bonding electrodes connected to the first and second conductive semiconductor layers, respectively; a transparent electrode layer formed on the second conductive semiconductor layer; a plurality of nano structures formed on the transparent electrode layer; and a passivation layer formed to cover the plurality of nano-structures, wherein refractive indexes of the transparent electrode layer, the plurality of nano-structures, and the passivation layer may be sequentially reduced. | 2012-11-29 |
20120298955 | GROUP III NITRIDE BASED LIGHT EMITTING DIODE STRUCTURES WITH A QUANTUM WELL AND SUPERLATTICE, GROUP III NITRIDE BASED QUANTUM WELL STRUCTURES AND GROUP III NITRIDE BASED SUPERLATTICE STRUCTURES - A semiconductor device is provided that includes a Group III nitride based superlattice and a Group III nitride based active region comprising at least one quantum well structure on the superlattice. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of In | 2012-11-29 |
20120298956 | Method of Separating Light-Emitting Diode from a Growth Substrate - A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge. | 2012-11-29 |
20120298957 | LIGHT RECEIVING ELEMENT, LIGHT RECEIVING ELEMENT ARRAY, HYBRID-TYPE DETECTING DEVICE, OPTICAL SENSOR DEVICE, AND METHOD FOR PRODUCING LIGHT RECEIVING ELEMENT ARRAY - The present invention provides a light receiving element array etc., having a high light-reception sensitivity in the near-infrared region, an optical sensor device, and a method for producing the light receiving element array. A light receiving element array | 2012-11-29 |
20120298958 | QUANTUM-WELL-BASED SEMICONDUCTOR DEVICES - Quantum-well-based semiconductor devices and methods of forming quantum-well-based semiconductor devices are described. A method includes providing a hetero-structure disposed above a substrate and including a quantum-well channel region. The method also includes forming a source and drain material region above the quantum-well channel region. The method also includes forming a trench in the source and drain material region to provide a source region separated from a drain region. The method also includes forming a gate dielectric layer in the trench, between the source and drain regions; and forming a gate electrode in the trench, above the gate dielectric layer. | 2012-11-29 |
20120298959 | LINE-TUNNELING TUNNEL FIELD-EFFECT TRANSISTOR (TFET) AND MANUFACTURING METHOD - A tunnel field effect transistor (TFET) and method of making the same is provided. The TFET comprises a source-channel-drain structure and a gat electrode. The source region comprises a first source sub-region which is doped with a first doping profile with a dopant element of a first doping type having a first peak concentration and a second source sub-region close to a source-channel interface which is doped with a second doping profile with a second dopant element with the same doping type as the first dopant element and having a second peak concentration. The second peak concentration of the second doping profile is substantially higher than the maximum doping level of the first doping profile close to an interface between the first and the second source sub-regions. | 2012-11-29 |
20120298960 | Hetero-Junction Tunneling Transistor - A hetero-junction tunneling transistor having a first layer of p++ silicon germanium which forms a source for the transistor at one end. A second layer of n+ silicon material is deposited so that a portion of the second layer overlies the first layer and forms the drain for the transistor. An insulating layer and metallic gate for the transistor is deposited on top of the second layer so that the gate is aligned with the overlying portions of the first and second layers. The gate voltage controls the conduction between the source and the drain and the conduction between the first and second layers occurs by vertical tunneling between the layers. | 2012-11-29 |
20120298961 | CONTROL OF TUNNELING JUNCTION IN A HETERO TUNNEL FIELD EFFECT TRANSISTOR - A method to fabricate a hetero-junction in a Tunnel Field Effect Transistor device configuration (e.g. in a segmented nanowire TFET) is provided. A thin transition layer is inserted in between the source region and channel region such that the out-diffusion is within a very limited region of a few nm, guaranteeing extremely good doping abruptness thanks to the lower diffusion of the dopants in the transition layer. The transition layer avoids the direct contact between the highly doped source region and the lowly doped or undoped channel and allows to contain the whole doping entirely within the source region and transition layer. The thickness of the transition layer can be engineered such that the transition layer coincides with the steep transition step from the highly doped source region to the intrinsic region (channel), and hence maximizing the tunneling current. | 2012-11-29 |
20120298962 | Utilization of Organic Buffer Layer to Fabricate High Performance Carbon Nanoelectronic Devices - A fabrication process for a nanoelectronic device and a device are provided. Channel material is deposited on a substrate to form a channel. A source metal contact and a drain metal contact are deposited on the channel material, and the source metal contact and the drain metal contact are on opposing ends of the channel material. A polyhydroxystyrene derivative is deposited on the channel material. A top gate oxide is deposited on the polymer layer. A top gate metal is deposited on the top gate oxide. | 2012-11-29 |
20120298963 | STRUCTURE FOR USE IN FABRICATION OF PIN HETEROJUNCTION TFET - A structure for use in fabrication of a PiN heterojunction tunnel field effect transistor (TFET) includes a silicon wafer comprising an alignment trench, a p-type silicon germanium (SiGe) region, and a hydrogen implantation region underneath the p-type SiGe region and the alignment trench that divides the silicon wafer into a upper silicon region and a lower silicon region, wherein the upper silicon region comprises the alignment trench and the p-type SiGe region; and a first oxide layer located over the alignment trench and the p-type SiGe region that fills the alignment trench and is bonded to a second oxide layer located on a handle wafer; wherein the alignment trench is configured to align a wiring level of the device comprising the PiN heterojunction TFET to the p-type SiGe region. | 2012-11-29 |
20120298964 | Light-Emitting Semiconductor Chip - A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between an n-conductive multilayer structure and a p-conductive semiconductor layer. A doping profile is formed in the n-conductive multilayer structure which includes at least one doping peak. | 2012-11-29 |
20120298965 | MULTIGATE STRUCTURE FORMED WITH ELECTROLESS METAL DEPOSITION - A multigate structure which comprises a semiconductor substrate; an ultra-thin silicon or carbon bodies of less than 20 nanometers thick located on the substrate; an electrolessly deposited metallic layer selectively located on the side surfaces and top surfaces of the ultra-thin silicon or carbon bodies and selectively located on top of the multigate structures to make electrical contact with the ultra-thin silicon or carbon bodies and to minimize parasitic resistance, and wherein the ultra-thin silicon or carbon bodies and metallic layer located thereon form source and drain regions is provided along with a process to fabricate the structure. | 2012-11-29 |
20120298966 | Host materials for oled - Novel aryl silicon and aryl germanium host materials are described. These compounds improve OLED device performance when used as hosts in the emissive layer of the OLED. | 2012-11-29 |
20120298967 | ORGANIC LIGHT EMITTING DEVICE - An organic light emitting device is provided and suitable for being disposed on a substrate. The organic light emitting device includes a cathode layer, a buffer layer, a material layer, an organic light emitting layer and an anode layer. The cathode layer is disposed on the substrate. The buffer layer is disposed on and contacts the cathode layer, and the cathode layer is disposed between the substrate and the buffer layer. The material layer is disposed on and contacts the buffer layer, and the buffer layer is disposed between the cathode layer and the material layer, wherein a difference between a lowest unoccupied molecular orbital of the buffer layer and a highest occupied molecular orbital of the material layer is smaller than 2 eV. The organic light emitting layer is disposed on the material layer. The anode layer is disposed on the organic light emitting layer. | 2012-11-29 |
20120298968 | ORGANIC LIGHT-EMITTING DEVICE - Provided is an organic light-emitting device including a plurality of pixels, each including a first sub-pixel, a second sub-pixel, and a third sub-pixel having different colors from each other. Each of the pixels includes a substrate, a first electrode layer on the substrate, a first light-emitting layer disposed on the first electrode in the first, second and third sub-pixels, an auxiliary layer disposed on the first light-emitting layer in the second and third sub-pixels, a second light-emitting layer disposed on the auxiliary layer in the second sub-pixel, a third light-emitting layer disposed on the auxiliary layer in the third sub-pixel, and a second electrode layer on the first, second, and third light-emitting layers. | 2012-11-29 |
20120298969 | COMPOUND HAVING PYRIDOINDOLE RING STRUCTURE HAVING SUBSTITUTED PYRIDYL GROUP ATTACHED THERETO, AND ORGANIC ELECTROLUMINESCENCE ELEMENT - The invention relates to a compound having a pyridoindole ring structure having a substituted pyridyl group of formula (1); and to an organic electroluminescent device comprising a pair of electrodes and at least one organic layer interposed between the electrodes, wherein at least one of the organic layer(s) contains the compound: | 2012-11-29 |
20120298970 | Patterning Slit Sheet Assembly, Organic Layer Deposition Apparatus, Method of Manufacturing Organic Light-Emitting Display Apparatus, and the Organic Light-Emitting Display Apparatus - A patterning slit sheet assembly to perform a deposition process to deposit a thin film on a substrate in a fine pattern. A patterning slit sheet assembly includes a patterning slit sheet including a slit unit, and a non-slit region that is located along edges of the slit unit, the patterning slit sheet being smaller than the substrate in at least one of a first direction or a second direction perpendicular to the first direction; a frame combined with the patterning slit sheet to support the patterning slit sheet; and a shielding unit extending on at least one inner side of the frame and overlapping an area including the edges of the slit unit. | 2012-11-29 |
20120298971 | ELECTRODE AND ELECTRONIC DEVICE COMPRISING THE SAME - A graphene electrode having a surface modified to have a high work function, and an electronic device including the same. | 2012-11-29 |
20120298972 | ORGANIC TFT ARRAY SUBSTRATE AND MANUFACTURE METHOD THEREOF - According to an embodiment of the disclosed technology, a manufacture method of an organic thin film transistor array substrate is provided. The method comprises: forming a first pixel electrode, a source electrode, a drain electrode and a data line in a first patterning process; forming an organic semiconductor island and a gate insulating island in a second patterning process; forming a data pad region in a third patterning process; and forming a second pixel electrode, a gate electrode and a gate line in a fourth patterning process. | 2012-11-29 |
20120298973 | Method of Manufacturing Light-Emitting Device and Light-Emitting Device - A highly reliable light-emitting device is provided. A light-emitting device in which problems due to a metal mask are prevented is provided. A light-emitting device in which a problem due to the resistance of an upper electrode layer of a light-emitting element is prevented is provided. An electrode layer is provided over a substrate in advance, and an EL layer and an upper electrode layer are formed in the same pattern without use of a metal mask so as to overlap with the electrode layer. After that, the electrode layer is electrically connected to the upper electrode layer. As a connection method, a laser light irradiation method, a method in which physical pressure is applied, a method in which heating is performed under the state where physical pressure is applied, or the like is used. | 2012-11-29 |
20120298974 | SIMPLIFIED ORGANIC ELECTRONIC DEVICE EMPLOYING POLYMERIC ANODE WITH HIGH WORK FUNCTION - An electronic device employing a polymeric anode with high work function. | 2012-11-29 |
20120298975 | MATERIAL FOR ORGANIC ELECTROLUMINESCENCE DEVICES AND ORGANIC ELECTROLUMINESCENCE DEVICE USING THE MATERIAL - A material for organic electroluminescence devices comprising a compound in which a heterocyclic group having nitrogen is bonded to an arylcarbazolyl group or a carbazolylalkylene group and an organic electroluminescence device comprising an anode, a cathode and an organic thin film layer comprising at least one layer and disposed between the anode and the cathode, wherein at least one layer in the organic thin film layer comprises the material for organic electroluminescence devices described above. The material can provide an organic electroluminescence device emitting bluish light with a high purity of color. The organic electroluminescence device uses the material. | 2012-11-29 |
20120298976 | N-Type Materials And Organic Electronic Devices - There is presently provided organic compounds of formula I, n-type acceptor materials derived from such compounds and devices comprising such n-type acceptor materials. | 2012-11-29 |
20120298977 | ORGANIC ELECTROLUMINESCENCE DEVICE - Provided is an organic electroluminescence device including a pair of electrodes composed of an anode and a cathode, a light emitting layer between the electrodes and an organic layer which is adjacent to the light emitting layer between the light emitting layer and the cathode, on a substrate, the light emitting layer contains at least one compound having a carbazole structure and the organic layer adjacent to the light emitting layer contains at least one hydrocarbon compound which is composed only of carbon atoms and hydrogen atoms, has a molecular weight in a range of 400 to 1,200, and contains a condensed polycyclic structure with a total carbon number of 13 to 22. | 2012-11-29 |
20120298978 | LIGHT EMITTING DEVICE AND ELECTRONIC APPLIANCE USING THE SAME - A light emitting device comprises a pair of electrodes and a mixed layer provided between the pair of electrodes. The mixed layer contains an organic compound which contains no nitrogen atoms, i.e., an organic compound which dose not have an arylamine skeleton, and a metal oxide. As the organic compound, an aromatic hydrocarbon having an anthracene skeleton is preferably used. As such an aromatic hydrocarbon, t-BuDNA, DPAnth, DPPA, DNA, DMNA, t-BuDBA, and the like are listed. As the metal oxide, molybdenum oxide, vanadium oxide, ruthenium oxide, rhenium oxide, and the like are preferably used. Further, the mixed layer preferably shows absorbance per 1 μm of 1 or less or does not show a distinct absorption peak in a spectrum of 450 to 650 nm when an absorption spectrum is measured. | 2012-11-29 |
20120298979 | ORGANIC ELECTROLUMINESCENT DEVICE - An organic electroluminescent device includes: a pair of electrodes; and at least one organic compound layer therebetween, the at least one organic compound layer comprises at least a light-emitting layer, wherein at least one of the at least one organic compound layer comprises at least one compound represented by a particular formula. | 2012-11-29 |
20120298980 | ORGANIC ELECTROLUMINESCENT DEVICE - An organic electroluminescent device, which comprises: a pair of electrodes; and an organic compound layer including a light-emitting layer between the pair of electrodes, wherein the organic compound layer comprises a compound represented by formula (I): | 2012-11-29 |
20120298981 | STYRENE-BASED COPOLYMERS, IN PARTICULAR FOR USE IN OPTOELECTRONIC COMPONENTS - The present invention relates to styrene-based copolymers having recurring units which contain substituted anthra | 2012-11-29 |
20120298982 | High-Gain Complementary Inverter with Ambipolar Thin Film Transistors and Fabrication Thereof - The present invention relates to a high gain complementary inverter with ambipolar thin film transistors and fabrication thereof, comprising: a gate layer, a silica layer, a first active layer, a first source, a first drain, a second active layer, a second source and a second drain for fabrication cost and complexity reduction. | 2012-11-29 |
20120298983 | SEMICONDUCTOR STRUCTURE AND ORGANIC ELECTROLUMINESCENCE DEVICE - A semiconductor structure and an organic electroluminescence device applying the same are provided. A gate insulating layer covers a gate electrode disposed on a substrate. A channel layer has a channel length L along a channel direction and has a first side and a second side opposite to the first side. The channel layer is located on the gate insulating layer over the gate electrode. A source electrode and a drain electrode are located at and electrically connected to the first side and the second side of the channel layer, respectively. A conductive light-shielding pattern layer is disposed on a dielectric layer covering the source electrode, the drain electrode and the channel layer, and is overlapped to a portion of the source electrode and a portion of the channel layer in a vertical projection. The conductive light-shielding pattern layer and the channel layer have an overlapping length d | 2012-11-29 |
20120298984 | BACK PANEL FOR FLAT PANEL DISPLAY APPARATUS, FLAT PANEL DISPLAY APPARATUS COMPRISING THE SAME, AND METHOD OF MANUFACTURING THE BACK PANEL - A back panel for a flat panel display apparatus includes: a pixel electrode disposed on a substrate; a first gate electrode layer of a thin-film transistor (TFT) disposed on the substrate; a second gate electrode layer disposed on the first gate electrode layer and including a semiconductor material; a third gate electrode layer disposed on the second gate electrode layer and including a metal material; a first insulating layer disposed on the third gate electrode layer; an active layer disposed on the first insulating layer and including a transparent conductive oxide semiconductor; a second insulating layer disposed on the active layer; source and drain electrodes disposed connected to the active layer through the second insulating layer; and a third insulating layer covering the source and drain electrodes. The first gate electrode layer and the pixel electrode include a transparent conductive oxide. | 2012-11-29 |
20120298985 | THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - Provided are a thin film transistor able to increase or maximize productivity and production yield, and a method of fabricating the same. The method of fabricating the thin film transistor includes forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an active layer formed of an amorphous oxide semiconductor on the gate insulating layer, and respectively forming a source electrode and a drain electrode on both sides of the active layer above the gate electrode. The amorphous oxide semiconductor of the active layer may be doped with a metal oxide dielectric. | 2012-11-29 |
20120298986 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention makes it possible to lower the on resistance of a semiconductor element without hindering the function of a diffusion prevention film in a semiconductor device having the semiconductor element that uses a wire in a wiring layer as a gate electrode and has a gate insulation film in an identical layer to the diffusion prevention film. A first wire and a gate electrode are embedded into the surface layer of an insulation layer comprising a first wiring layer. A diffusion prevention film is formed between the first wiring layer and a second wiring layer. A gate insulation film is formed by: forming a recess over the upper face of the diffusion prevention film in the region overlapping with the gate electrode and around the region; and thinning the part. | 2012-11-29 |
20120298987 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An offset transistor and a non-offset transistor each including an oxide semiconductor are formed over one substrate. An oxide semiconductor layer, a gate insulator, and first layer wirings which serve as gate wirings are formed. After that, the offset transistor is covered with a resist and impurities are mixed into the oxide semiconductor layer, so that an n-type oxide semiconductor region is formed. Then, second layer wirings are formed. Through the above steps, the offset transistor and the non-offset transistor (e.g., aligned transistor) can be formed. | 2012-11-29 |
20120298988 | CIRCUIT BOARD, DISPLAY DEVICE, AND PROCESS FOR PRODUCTION OF CIRCUIT BOARD - The present invention provides a highly reliable circuit board that includes TFTs a semiconductor layer of which is formed from an oxide semiconductor; and low-resistance aluminum wirings. The circuit board of the present invention includes an oxide semiconductor layer; source wirings; and drain wirings, wherein each of the source wirings and the drain wirings includes a portion in contact with the semiconductor layer, portions of the source wirings in contact with the semiconductor layer and respective portions of the drain wirings in contact with the semiconductor layer spacedly facing each other, and the source wirings and the drain wirings are formed by stacking a layer formed from a metal other than aluminum and a layer containing aluminum. | 2012-11-29 |
20120298989 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - The manufacturing method of the present invention includes steps of selectively forming a photocatalyst material or a material including an amino group by discharging a composition including the photocatalyst material or the material including an amino group; immersing the photocatalyst material or the material including an amino group in a solution including a plating catalyst material so as to adsorb or deposit the plating catalyst material onto the photocatalyst material or the material including an amino group; and immersing the plating catalyst material in a plating solution including a metal material so as to form a metal film on a surface of the photocatalyst material or the material including an amino group adsorbing or depositing the plating catalyst material, thereby manufacturing a semiconductor device. The pH of the solution including the plating catalyst material is adjusted in a range of 3 to 6. | 2012-11-29 |
20120298990 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to increase an aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over one substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using metal and a channel layer is formed of an oxide semiconductor, and a driver circuit wiring formed using metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode layer and a drain electrode layer are formed using an oxide conductor and a semiconductor layer is formed of an oxide semiconductor, and a display portion wiring formed using an oxide conductor. | 2012-11-29 |
20120298991 | MULTILAYER SUBSTRATE HAVING GALLIUM NITRIDE LAYER AND METHOD FOR FORMING THE SAME - The present invention provides a method for forming a multilayer substrate having a gallium nitride layer, wherein a mesh layer having a plurality of openings is formed on a substrate, and a buffer layer, three aluminum gallium nitride layers with different aluminum concentrations and a gallium nitride layer are formed in sequence on the substrate in the openings. The three aluminum gallium nitride layers with different aluminum concentrations are capable of releasing stress, decreasing cracks on the surface of the gallium nitride layer and controlling interior defects, such that the present invention provides a gallium nitride layer with larger area, greater thickness, no cracks and high quality for facilitating the formation of high performance electronic components in comparison with the prior art. The present invention further provides a multilayer substrate having a gallium nitride layer. | 2012-11-29 |
20120298992 | TEST LAYOUT STRUCTURE - A test layout structure includes a substrate, a first oxide region of a first height, a second oxide region of a second height, a plurality of border regions, and a test layout pattern. The first oxide region is disposed on the substrate. The second oxide region is also disposed on the substrate and adjacent to the first oxide region. The first height is substantially different from the second height. A plurality of border regions are disposed between the first oxide region and the second oxide region. The test layout pattern includes a plurality of individual sections. A test region is disposed between two of the adjacent individual sections which are parallel to each other. | 2012-11-29 |
20120298993 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device including: a base material portion that includes a semiconductor substrate and an insulating film that is formed on one face of the semiconductor substrate and on which a vertical hole is formed along the thickness direction of the semiconductor substrate; a vertical hole wiring portion that includes a vertical hole electrode formed on a side wall of the base material portion that forms the vertical hole; a metallic film that is formed within the insulating film and that is electrically connected to the vertical hole wiring portion; and a conductive protective film that is formed to be in contact with the metallic film within the insulating film and that is formed in a region that includes a contact region of a probe during a probe test that is performed in the middle of manufacture on a film face of the metallic film. | 2012-11-29 |
20120298994 | SEMICONDUCTOR DEVICE - A semiconductor device according to an embodiment includes a plurality of unit cells having a FET structure, this semiconductor device having: a gate electrode wiring connected electrically to gate electrode of the FET structure of each unit cell; a gate electrode pad connected electrically to the gate electrode wiring and connecting each gate electrode to an external element; and a probe electrode pad that is connected electrically to the gate electrode wiring and with which an inspection probe comes into contact. | 2012-11-29 |
20120298995 | WAFER AND EPITAXIAL WAFER, AND MANUFACTURING PROCESSES THEREFOR - Provided is a silicon wafer which is stabilized in quality exerting no adverse influence on device characteristics and manufactured by restricting a boron contamination from the environment, and a manufacturing process therefor. Concretely, the silicon wafer is characterized by an attached boron amount thereon being 1×10 | 2012-11-29 |
20120298996 | Thin Film Transistor and Method for Manufacturing the Same - A thin film transistor and a method for manufacturing the same are provided. A photoresist layer is patterned to cover a part of an ohmic contact layer by shifting a photomask. Then, the exposed ohmic contact layer is removed to shorten the channel length of the thin film transistor for increasing on-state current. | 2012-11-29 |
20120298997 | SEMICONDUCTOR DEVICE - One embodiment of the present invention is a semiconductor device which includes a gate electrode; a gate insulating film formed to cover the gate electrode; a semiconductor layer formed over the gate insulating film and placed above the gate electrode; a second insulating film formed over the semiconductor layer; a first insulating film formed over a top surface and a side surface of the second insulating film, a side surface of the semiconductor layer, and the gate insulating film; silicon layers and which are formed over the first insulating film and electrically connected to the semiconductor layer; and a source electrode and a drain electrode which are formed over the silicon layers. The source electrode and the drain electrode are electrically separated from each other over the first insulating film. The semiconductor layer is not in contact with each of the source electrode and the drain electrode. | 2012-11-29 |
20120298998 | METHOD FOR FORMING OXIDE SEMICONDUCTOR FILM, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The impurity concentration in the oxide semiconductor film is reduced, and a highly reliability can be obtained. | 2012-11-29 |
20120298999 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to reduce off-state leakage current between a source electrode and a drain electrode. One embodiment of the present invention is a semiconductor device including a gate electrode, gate insulating films and formed to cover the gate electrode, an active layer formed over the gate insulating films and located above the gate electrode, silicon layers and formed over side surfaces of the active layer and the gate insulating films, and a source electrode and a drain electrode formed over the silicon layers. The active layer is not in contact with each of the source electrode and the drain electrode. | 2012-11-29 |
20120299000 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ORGANIC LIGHT EMITTING DISPLAY APPARATUS - A thin film transistor (TFT) having an active layer pattern, the active layer pattern including a first active layer pattern extending in a first direction; a second active layer pattern extending in the first direction and parallel to the first active layer pattern; and a third active layer pattern connecting a first end of the first active layer pattern to a first end of the second active layer pattern. | 2012-11-29 |
20120299001 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - [Problem]A TFT is manufactured using at least five photomasks in a conventional liquid crystal display device, and therefore the manufacturing cost is high. | 2012-11-29 |
20120299002 | COLOR DISPLAY DEVICE HAVING WHITE SUB-PIXELS AND EMBEDDED LIGHT REFLECTIVE LAYERS - Disclosed is a color display device containing plural pixels on a substrate, each pixel is composed of plural sub-pixels which emit lights different in wavelength in the visible range and a white sub-pixel, the plural sub-pixels and the white sub-pixel each have a white organic electroluminescence layer interposed between an optically semitransparent reflection layer and a light reflection layer, the optical distance between the optically semitransparent reflection layer and the light reflection layer in each of the plural sub-pixels forms a resonator having a distance for resonating emitted light, and the optical distance between the optically semitransparent reflection layer and the light reflection layer in the white sub-pixel is longer than the maximum optical distance between the optically semitransparent reflection layer and the light reflection layer in each of the plural sub-pixels. | 2012-11-29 |
20120299003 | ANALOG CIRCUIT AND SEMICONDUCTOR DEVICE - An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×10 | 2012-11-29 |
20120299004 | ACTIVE DEVICE ARRAY SUBSTRATE - An active device array substrate including a first patterned conductive layer, a dielectric layer, a second patterned conductive layer, a passivation layer and pixel electrodes is provided. The first patterned conductive layer includes scan lines, common lines, gates and strip floating shielding patterns. The dielectric layer covering the first patterned conductive layer has first contact holes which expose a portion of the common lines, respectively. The second patterned conductive layer includes data lines, sources, drains and strip capacitance electrodes. Each strip capacitance electrode is electrically connected to one of the common lines through one of the first contact holes. A gap is formed between each data line and one strip capacitance electrode, and the strip floating shielding patterns are disposed under the data lines, the gap and the strip capacitance electrodes. Each pixel electrode is electrically connected to one of the drains through one of the second contact holes. | 2012-11-29 |
20120299005 | NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A non-volatile memory device includes a channel that extends from a substrate in a vertical direction and includes a first portion including an impurity doped region and a second portion disposed under the first portion; and a plurality of memory cells and a selection transistor that are stacked over the substrate along the channel, where the impurity doped region includes a second impurity doped region that forms a side surface and an upper surface of the first portion and a first impurity doped region that covers the second impurity doped region, and a bandgap energy of the second impurity doped region is lower than a bandgap energy of the first impurity doped region. | 2012-11-29 |
20120299006 | SEMICONDUCTOR DEVICE - An object is to prevent light leakage caused due to misregistration even when the width of a black matrix layer is not expanded to a designed value or larger. One embodiment of the present invention is a semiconductor device including a single-gate thin film transistor in which a first semiconductor layer is sandwiched between a bottom-gate electrode and a first black matrix layer. The first semiconductor layer and the first black matrix layer overlap with each other. | 2012-11-29 |
20120299007 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THIN FILM TRANSISTOR, AND ORGANIC LIGHT EMITTING DIODE DISPLAY - There is provided a thin film transistor including an active layer on a substrate (the active layer including polysilicon and a metal catalyst dispersed in the polysilicon, a source area, a drain area, and a channel area), a gate electrode disposed on the channel area of the active layer, a source electrode electrically connected to the source area, and a drain electrode electrically connected to the drain area, wherein the gate electrode, the source area, and the drain area of the active layer include metal ions, the source area and the drain area are separate from each other, and the channel is disposed between the source area and the drain area. | 2012-11-29 |
20120299008 | LIQUID CRYSTAL DISPLAY DEVICE - Techniques are provided for unifying steps of sealing material so that the yield and the reliability of a liquid-crystal display device become high. A starting film of scanning lines is patterned so that prismatic dummy wirings | 2012-11-29 |
20120299009 | Method of Manufacturing Thin Film Transistor - The object of the present invention is to form a low-concentration impurity region with good accuracy in a top gate type TFT. Phosphorus is added to a semiconductor layer by using a pattern made of a conductive film as a mask to form an N-type impurity region in a self-alignment manner. A positive photoresist is applied to a substrate so as to cover the pattern and then is exposed to light applied to the back of the substrate and then is developed, whereby a photoresist | 2012-11-29 |
20120299010 | GROUP-III NITRIDE SEMICONDUCTOR DEVICE, EPITAXIAL SUBSTRATE, AND METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR DEVICE - A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle with respect to a c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes GaN-based semiconductor layers. The reference axis is inclined at a first angle from the c-axis of the III-nitride semiconductor toward a first crystal axis, either the m-axis or a-axis. The reference axis is inclined at a second angle from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×10 | 2012-11-29 |
20120299011 | FIELD-EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME - An AlN buffer layer, an undoped GaN layer, an undoped AlGaN layer, a p-type GaN layer and a heavily doped p-type GaN layer are formed in this order. A gate electrode forms an Ohmic contact with the heavily doped p-type GaN layer. A source electrode and a drain electrode are provided on the undoped AlGaN layer. A pn junction is formed in a gate region by a two dimensional electron gas generated at an interface between the undoped AlGaN layer and the undoped GaN layer and the p-type GaN layer, so that a gate voltage can be increased. | 2012-11-29 |
20120299012 | Gallium Nitride for Liquid Crystal Electrodes - Described herein is a liquid crystal (LC) device having Gallium Nitride HEMT electrodes. The Gallium Nitride HEMT electrodes can be grown on a variety of substrates, including but not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium flouride buffer layer), and spinel. Also described is a structure provided from GaN HEMT grown on large area silicon substrates and transferred to another substrate with appropriate properties for OPA devices. Such substrates include, but are not limited to sapphire, silicon carbide, silicon, fused silica (using a calcium fluoride buffer layer), and spinel. The GaN HEMT structure includes an AlN interlayer for improving the mobility of the structure. | 2012-11-29 |