46th week of 2012 patent applcation highlights part 14 |
Patent application number | Title | Published |
20120286193 | REFRIGERANT COMPOSITION - The refrigerant composition is a hydrocarbon-based composition that may be used as a refrigerant for air conditioners, refrigerators or the like, and further, which may be used as a detergent for cleaning precision components, such as semiconductor chips, motherboards or the like. The refrigerant composition preferably includes, by volume, between 50% and 65% propylene, between 30% and 45% propane, and between 5% and 10% isobutane. In a preferred embodiment, the refrigerant composition contains about 40% propane, about 55% propylene, and about 5% isobutane (methyl propane) by volume. | 2012-11-15 |
20120286194 | THERMAL CONDUCTIVE SHEET, INSULATING SHEET, AND HEAT DISSIPATING MEMBER - A thermal conductive sheet contains a resin and a filler. The filler contains a plate-like or flake-like first filler and a block-like or sphere-like second filler, and the average orientation angle of the first filler is 28 degrees or more and the maximum orientation angle thereof is 60 degrees or more with respect to the plane direction of the thermal conductive sheet. | 2012-11-15 |
20120286195 | HEAT CONDUCTING MEMBER AND ADSORBENT USING BURNED PLANT MATERIAL - Provided is a heat conducting member using a heat conducting material that has been developed so as to retain the same heat conductivity as that of a conventional product without using silicone rubber. The heat conducting member comprises a base material formed from any of rubber, resin, paint or cement and, contained in the base material, a burned plant material selected from any of soybean hulls, rapeseed meal, sesame meal, cotton seed meal, cotton hulls, soybean chaffs, and cacao husk, and is produced by controlling at least one of the content ratio of burned plant material against the base material or the temperature at which the plant material is burned. | 2012-11-15 |
20120286196 | HOT TEST FLUID CONTAINING VAPOR PHASE INHIBITION - This invention covers a formulation providing protection against corrosion in liquid and vapor phase. Such formulations are used in applications where engine parts or fuel cell systems are subjected to a “running-in” or “hot-test” prior to final assembly or storage. The invention includes a concentrate as well as a dilute solution. The synergistic combination of inorganic ammonium derivatives in combination with monocarboxylic or dicarboxylic acids increases the period of protection. This enables storage for a longer period when the engine parts are shipped or stored prior to assembling. The use of the described invention pre-conditions the metal surface and provides protection even if afterwards the liquid is almost completely removed. | 2012-11-15 |
20120286197 | HOT TEST FLUID CONTAINING VAPOR PHASE INHIBITION - This invention covers formulation providing protection against corrosion in both the liquid and vapor phase. Such formulations are used in applications where engine parts or fuel cell systems are subjected to a “running-in” or “hot test” prior to final assembly or storage. The invention includes a concentrate as well as a dilute solution. The synergistic combination of inorganic ammonium derivatives in combination with monocarboxylic or dicarboxylic acids and a silicate dramatically increases the period of protection for both ferrous and aluminum alloys. This enables storage for a longer period when the engine parts are shipped or stored prior to assembling. | 2012-11-15 |
20120286198 | LIQUID CRYSTAL COMPOSITION, LIQUID CRYSTAL ELEMENT, AND LIQUID CRYSTAL DISPLAY DEVICE - An object is to provide a novel liquid crystal composition that can be used for a variety of liquid crystal devices. Particularly, a novel liquid crystal composition is used to achieve a reduction in driving voltage of a liquid crystal element and a reduction in power consumption of a liquid crystal display device. The liquid crystal composition includes a polymerizable monomer represented by the general formula (G1), a nematic liquid crystal, and a chiral agent. In the general formula (G1), n and m are individually an integer from 1 to 20, and R | 2012-11-15 |
20120286199 | FLUOROVINYL DERIVATIVE, LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - To provide a liquid crystal compound having general physical properties required for the compound, namely, a high stability to heat, light and so forth, a small viscosity, a refractive index anisotropy value having a suitable magnitude, a dielectric constant anisotropy value having a suitable magnitude and steep electro-optical characteristics, a wide temperature range of a nematic phase, and an excellent compatibility with other liquid crystal compounds, in particular, a liquid crystal compound having a wide temperature range of the nematic phase; the compound is represented by formula (1): | 2012-11-15 |
20120286200 | COMPOUND HAVING BICYCLO[3.3.0]OCTANE-2,6-DIYL, LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal compound having a high stability to heat, light or the like, a high clearing point, a low minimum temperature of a liquid crystal phase, a small viscosity, a suitable optical anisotropy, a large negative dielectric anisotropy, a suitable elastic constant and an excellent compatibility with other liquid crystal compounds, and a liquid crystal composition including this compound, and a liquid crystal display device containing this composition. A compound represented by formula (1-1). | 2012-11-15 |
20120286201 | POLYMERIZABLE MONOMER COMPUND, LIQUID CRYSTAL COMPOSITION, AND LIQUID CRYSTAL DISPLAY DEVICE - A novel polymerizable monomer compound that can be used for a variety of liquid crystal devices is provided. Particularly, a novel liquid crystal composition including the novel polymerizable monomer compound and exhibiting a blue phase is provided. Further, a liquid crystal display device manufactured with the use of the liquid crystal composition is provided. A polymerizable monomer compound represented by the following general formula (G1) is provided. In the general formula (G1), n and m are individually an integer from 1 to 20 and may be the same as or different from each other, and R | 2012-11-15 |
20120286202 | Organic/Inorganic Composite - The present invention provides an organic/inorganic composite containing an inorganic phase dispersed in an organic polymer, the inorganic phase comprises one or more metal atoms that are coordinated to at least one rare earth metal atom via oxygen. The composite contains at least 5 mass % of rare earth metal. This rare earth metal is dispersed in the inorganic phase. | 2012-11-15 |
20120286203 | GOLD COATING OF RARE EARTH NANO-PHOSPHORS AND USES THEREOF - Novel core-shell nanoparticles comprising a phosphorescent core and metal shell as well as methods of synthesizing and using said core-shell nanoparticles are provided. In a preferred embodiment, the phosphorescent core comprises an upconverting phosphor and the shell comprises gold. | 2012-11-15 |
20120286204 | METAL FLUORIDE CRYSTAL, VACUUM ULTRAVIOLET LIGHT EMITTING ELEMENT, AND VACUUM ULTRAVIOLET LIGHT EMITTING SCINTILLATOR - [Problems to be Solved] A fluoride which emits light with high brightness in a vacuum ultraviolet region is provided. Also provided are a novel vacuum ultraviolet light emitting element which comprises the fluoride and which can be suitably used in photolithography, cleaning of a semiconductor or liquid crystal substrate, sterilization, next-generation large-capacity optical disks, medical care (ophthalmologic treatment, DNA cleavage), etc.; and a vacuum ultraviolet light emitting scintillator which is composed of the fluoride and can be suitably used in a small-sized radiation detector incorporating a diamond light receiving element or AlGaN light receiving element with a low background noise as an alternative to a conventional photomultiplier tube. | 2012-11-15 |
20120286205 | BOROSILICATE LUMINESCENT MATERIAL AND PREPARING METHOD THEREOF - Provided are a borosilicate luminescent material and a preparing method thereof. The borosilicate luminescent material has a chemical formula of aM | 2012-11-15 |
20120286206 | GREEN LUMINESCENT MATERIAL OF TERBIUM DOPED GADOLINIUM BORATE AND PREPARing METHOD THEREOF - A green luminescent material of terbium doped gadolinium borate is provided. The luminescent material has a formula of M | 2012-11-15 |
20120286207 | LUMINESCENT MATERIAL - A luminescent material is disclosed. The luminescent material may include a first compound having a host lattice comprising first ions and oxygen. A first portion of the first ions may be substituted by copper ions. In one embodiment, the host lattice may include silicon, the copper ions may be divalent copper ions and the first compound may have an Olivine crystal structure, β-K | 2012-11-15 |
20120286208 | PHOSPHOR INK COMPOSITION - The present invention provides phosphor inks configured to achieve high efficiency in converting LED light from one wavelength to another. The phosphor ink composition for deposition on an LED device comprises a phosphor component having nano-phosphor particles on the order of 100 to 1000 nanometers, and a curable resin component. In particular, the nano-phosphor particles are uniformly dispersed throughout the ink composition. The nano-phosphor particles may be formed by a size reduction process carried out on larger phosphor particles on the order of 1 to 50 micrometers. Preferably, the size reduction process is based on solvent wet milling. Methods for preparing the phosphor inks based on forming the nano-phosphor particles from larger particles by solvent wet milling are also provided. | 2012-11-15 |
20120286209 | METHOD FOR BIOMASS FRACTIONING BY ENHANCING BIOMASS THERMAL CONDUCTIVITY - A method is disclosed for generating useful chemical intermediates from biomass using a novel pyrolysis reactor that utilizes the inherent thermal properties of carbon under compression as the biomass is subjected to sequential or concurrent temperature ramps. The ramps are sufficient to volatilize and selectively create different components, while the pressure application aids the selective decomposition of the biomass. | 2012-11-15 |
20120286210 | SYNGAS PRODUCED BY PLASMA GASIFICATION - A syngas stream composition comprising on a dry basis up to about 50,000 mg/Nm | 2012-11-15 |
20120286211 | PROCESS FOR BIOMASS CONVERSION TO SYNTHESIS GAS - Biomass is processed through a biomass fractioning system that creates, through the application of selective temperature ramps and pressure shocks, a series of useful volatile components and BMF char, wherein the BMF char is reacted sacrificially with any one stream of methane, carbon dioxide, steam or oxygen to create highly pure synthesis gas with a controllable range of compositions. The resulting synthesis gas may be used in any desired manner, including conversion to oxygenates such as methanol and dimethyl ether, and to hydrocarbons. | 2012-11-15 |
20120286212 | GRANULAR STABILIZER FOR POLYMER AND PRODUCTION PROCESS THEREOF - The present invention provides a granular stabilizer for a polymer which is low-dusting and thus is easy to be handled. The present invention relates to a granular stabilizer for a polymer, comprising a compound shown by the formula (1): | 2012-11-15 |
20120286213 | CARBON BLACKS-FREE SULFUR-VULCANISED ELECTRICALLY CONDUCTIVE RUBBER BLENDS - A practical and environmentally-friendly method, i.e. the high temperature-mechanical mixing by using an internal mixing device and a two-roll open milling device is used to produce the carbon blacks-free electrically conductive sulfur-vulcanised rubber blends of solid poly(butadiene-co-acrylonitrile) and solid sulfonic acid doped polyaniline. The addition of sulfur vulcanisation system does not affect the electrical properties of the vulcanised blends. All vulcanised blends prepared by using this method show useful electrical conductivities up to the order of 10 | 2012-11-15 |
20120286214 | RESIN ELECTRODE PASTE AND ELECTRONIC COMPONENT WITH RESIN ELECTRODE FORMED USING THE SAME - A resin electrode paste characterized by rapid drying of solvent and efficient formation of a electrode with high shape accuracy contains conductive material powder, solvent, and dissolved in the solvent, a first resin having a softening point maintaining a solid state at the drying temperature and 10 to 40 weight % of the combined resins of a second resin having a softening point at least 45° C. lower and which is liquid at the drying heating temperature. The conductive powder is dispersed in a cured resin by removing solvent by heating and curing the resin. An electronic component a surface resin electrode formed with the resin electrode paste is described. | 2012-11-15 |
20120286215 | METHODS AND COMPOSITIONS FOR THE SEPARATION OF SINGLE-WALLED CARBON NANOTUBES - Embodiments herein describe a composition including at least one water-soluble complex having a water-soluble separation agent including a planar portion, at least one pi electron on the planar portion and at least one electron withdrawing group; and a semiconducting single-walled carbon nanotube in an aqueous solution. Further embodiments describe a method of separating metallic single-walled carbon nanotubes and semiconducting single-walled carbon nanotubes including providing carbon nanotubes having an admixture of semiconducting single-walled carbon nanotubes and metallic single-walled carbon nanotubes; and combining the admixture with a water-soluble separation agent in an aqueous solution to form a mixture, in which the water-soluble separation agent includes a planar portion, at least one pi electron on the planar portion and at least one electron withdrawing group. | 2012-11-15 |
20120286216 | METHODS FOR MITIGATING AGGLOMERATION OF CARBON NANOSPHERES USING A LONG CHAIN HYDROCARBON SURFACTANT - Novel methods for manufacturing carbon nanostructures (e.g., carbon nanospheres) that are highly dispersed include forming a precursor composition, polymerizing the precursor composition, applying a long chain hydrocarbon surfactant to the polymerized carbon material, and carbonizing the polymerized material (e.g., through pyrolysis) to form the carbon nanostructures. The long chain hydrocarbon surfactant facilitates the formation of dispersed carbon nanostructures during the carbonization step. | 2012-11-15 |
20120286217 | METHODS FOR MITIGATING AGGLOMERATION OF CARBON NANOSPHERES USING EXTRACTION - Novel methods for manufacturing carbon nanostructures (e.g., carbon nanospheres) that are highly dispersed include forming a precursor composition, polymerizing the precursor composition, extracting water from the polymerized carbon material using an organic solvent, and carbonizing the polymerized material (e.g., through pyrolysis) to form the carbon nanostructures. The extraction-treated polymerized carbon material forms carbon nanostructures that are less agglomerated than carbon nanostructures manufactured using a similar technique without solvent extraction of water. | 2012-11-15 |
20120286218 | LOW COST ALTERNATIVES TO CONDUCTIVE SILVER-BASED INKS - A method of making an electrically conductive ink is provided. This ink is suitable for use in a photovoltaic device. The method includes the steps of providing solder particles, providing a surface oxide removal material; and formulating an ink with the solder particles and the surface oxide removal material. As a result, a solder is formed. This solder maintains electrical conductivity when used in the ink at a processing temperature less than 250 C. | 2012-11-15 |
20120286219 | SPUTTERING TARGET, SEMICONDUCTING COMPOUND FILM, SOLAR CELL COMPRISING SEMICONDUCTING COMPOUND FILM, AND METHOD OF PRODUCING SEMICONDUCTING COMPOUND FILM - The present invention provides a sputtering target which comprises an alkali metal, a Ib group element, a IIIb group element, and a VIb group element, and has a chalcopyrite crystal structure. Provided is a sputtering target comprising Ib-IIIb-VIb group elements and having a chalcopyrite crystal structure, which is suitable for producing, via a single sputtering process, a light-absorbing layer comprising the Ib-IIIb-VIb group elements and having the chalcopyrite crystal structure. | 2012-11-15 |
20120286220 | MATERIAL FOR A MOLDED RESIN FOR USE IN A SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a material for a molded resin as a material for a semiconductor light-emitting device that can yield a highly durable (light resistance and heat resistance) molded resin and can also improve the LED output through an excellent reflectivity. The present invention also provides an easily moldable material for a molded resin for a semiconductor light-emitting device. The material for a molded resin for a semiconductor light-emitting device is a resin composition comprising (A) a polyorganosiloxane, (B) a white pigment, and (C) a curing catalyst, wherein the white pigment (B) has the following characteristics (a) and (b); (a) an aspect ratio 1.2 or more and 4.0 or less, and (b) a primary particle diameter 0.1 μm or more and 2.0 μm or less. | 2012-11-15 |
20120286221 | DRIVE SYSTEM FOR TELESCOPIC LEGS FOR TABLES - A hydraulic drive system readily adapted for either manual actuation or motor-driven actuation due to the unique design of the hydraulic drive and its coupling to either a hand crank or to a motorized drive to provide hydraulic pressure to lift cylinders that can be attached to table legs for vertical adjustment. The hydraulic drive includes a screw jack having an end extending from one end of a housing and splined or otherwise keyed. A manual crank arm or motorized drive assembly includes a coupling which mates with the end of the screw jack to provide a drive force for the hydraulic cylinder drive. The motorized drive assembly includes a pair of toothed hubs and an intermediate flexible sleeve allowing alignment of the motorized drive to the drive assembly as well as providing sound dampening, a cushioned coupling, and facilitates overcurrent detection. | 2012-11-15 |
20120286222 | VEHICLE LIFT SYSTEM ACCESSORY - An accessory that assists in operating vehicle lift systems, particularly an accessory that assists in the operation of a crank wheel of a vehicle lift system. The accessory is portable and quickly and easily assembled to the vehicle lift system. The accessory is activated using a power source, for example a cordless power source such as a cordless power drill. The crank wheel is engaged by the accessory and operated to raise and lower the platform component of the vehicle lift system. | 2012-11-15 |
20120286223 | PNEUMATIC VEHICLE DOOR SPREADER - A pneumatic spreader for increasing the magnitude of a gap between a window or door of a motor vehicle and the vehicle body, to permit a tool to be inserted into and maneuvered through the gap. The spreader may comprise a hand operated squeeze bulb having a gas release valve and two inflatable flexible bladders inflated from the squeeze bulb through a manifolded gas supply conduit. Each bladder may be greater in length and width than in thickness, and may have an internal stiffener to facilitate initially inserting the bladder into the gap without causing the bladder to fold or roll during insertion. | 2012-11-15 |
20120286224 | METAL FENCE ASSEMBLY WITH CONCEALED HINGE CONNECTION - A fencing/railing assembly adapted to be positioned between a pair of posts and mounted thereto. The assembly includes a plurality of elongate pickets and one or more rails extending transverse to the pickets. The pickets each have at least one protrusion formed or positioned thereon. The rails have an elongate channel formed on an inside portion thereof for cooperating with the protrusion. The rails further include picket openings formed in an upper portion thereof for receiving pickets therethrough. The picket openings are sized and adapted to be slipped over the pickets and securely held in place by engagement of the protrusions with the channels formed on the inside portion of the rails. The channels and the protrusions form a connection between the pickets and the rails. | 2012-11-15 |
20120286225 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device and a method of manufacturing the same with easy formation of a phase change film is realized, realizing high integration and using a phase change film as a memory element. Between a MISFET of a region forming one memory cell and an adjoining MISFET, each MISFET source adjoins in the front surface of an insulating semiconductor substrate. A multi-layer structure of a phase change film and electric conduction film of specific resistance lower than the specific resistance is formed in plan view of the front surface of a semiconductor substrate ranging over each source of both MISFETs, and a plug is stacked thereon. The multi-layer structure functions as a wiring extending and existing in parallel on the surface of the semiconductor substrate, and an electric conduction film sends current in a parallel direction on the surface of the semiconductor substrate. | 2012-11-15 |
20120286226 | Nonvolatile Memory Devices And Methods Of Fabricating The Same - Nonvolatile memory devices including a first interlayer insulating film and a second interlayer insulating film separated from each other and are stacked sequentially, a first electrode penetrating the first interlayer insulating film and the second interlayer insulating film, a resistance change film along a top surface of the first interlayer insulating film, side surfaces of the first electrode, and a bottom surface of the second interlayer insulating film, and a second electrode between the first interlayer insulating film and the second interlayer insulating film. | 2012-11-15 |
20120286227 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes an isolation layer formed in a substrate and defining an active region, a trench formed in the substrate and defining a part of the active region as an active pillar; a word line formed inside the trench, a sub-source line formed under the trench and crossing the word line, a main source line formed over the substrate, coupled to the sub-source line, and crossing the word line, a variable resistor pattern formed over the active pillar, and a bit line contacting the variable resistor pattern and crossing the word line. | 2012-11-15 |
20120286228 | PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A phase change random access memory device includes a bottom electrode contact formed within a bottom electrode contact hole, a phase-change material pattern formed to surround a side of an upper portion of the bottom electrode contact, and an insulating layer buried within the phase-change material pattern and formed on an upper surface of the bottom electrode contact. | 2012-11-15 |
20120286229 | Memory Cells - Some embodiments include a memory cell that contains programmable material sandwiched between first and second electrodes. The memory cell can further include a heating element which is directly against one of the electrodes and directly against the programmable material. The heating element can have a thickness in a range of from about 2 nanometers to about 30 nanometers, and can be more electrically resistive than the electrodes. Some embodiments include methods of forming memory cells that include heating elements directly between electrodes and programmable materials. | 2012-11-15 |
20120286230 | CONFINEMENT TECHNIQUES FOR NON-VOLATILE RESISTIVE-SWITCHING MEMORIES - Confinement techniques for non-volatile resistive-switching memories are described, including a memory element having a first electrode, a second electrode, a metal oxide between the first electrode and the second electrode. A resistive switching memory element described herein includes a first electrode adjacent to an interlayer dielectric, a spacer over at least a portion of the interlayer dielectric and over a portion of the first electrode and a metal oxide layer over the spacer and the first electrode such that an interface between the metal oxide layer and the electrode is smaller than a top surface of the electrode. | 2012-11-15 |
20120286231 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed is a semiconductor device including a resistive change element between a first wiring and a second wiring, which are arranged in a vertical direction so as to be adjacent to each other, with an interlayer insulation film being interposed on a semiconductor substrate. The resistive change element includes a lower electrode, a resistive change element film made of a metal oxide and an upper electrode. Since the upper electrode on the resistive change element film is formed as part of a plug for the second wiring, a structure in which a side surface of the upper electrode is not in direct contact with the side surface of the metal oxide or the lower electrode is provided so that it is possible to realize excellent device characteristics, even when a byproduct is adhered to the side wall of the metal oxide or the lower electrode in the etching thereof. | 2012-11-15 |
20120286232 | ARRAY OPERATION USING A SCHOTTKY DIODE AS A NON-OHMIC SELECTION DEVICE - A two-terminal memory cell including a Schottky metal-semiconductor contact as a selection device (SD) allows selection of two-terminal cross-point memory array operating voltages that eliminate “half-select leakage current” problems present when other types of non-ohmic devices are used. The SD structure can comprise a “metal/oxide semiconductor/metal” or a “metal/lightly-doped single layer polycrystalline silicon.” The memory cell can include a two-terminal memory element including at least one conductive oxide layer (e.g., a conductive metal oxide—CMO, such as a perovskite or a conductive binary oxide) and an electronically insulating layer (e.g., yttria-stabilized zirconia—YSZ) in contact with the CMO. The SD can be included in the memory cell and configured electrically in series with the memory element. The memory cell can be positioned in a two-terminal cross-point array between a pair of conductive array lines (e.g., a bit line and a word line) across which voltages for data operations are applied. | 2012-11-15 |
20120286233 | MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME - A memory cell is provided that includes a steering element, a reversible resistance-switching element coupled to the steering element and a silicide-forming metal layer disposed between the steering element and the reversible resistance-switching element. The reversible resistance-switching element includes tantalum, and is formed using a selective deposition process. Numerous other aspects are provided. | 2012-11-15 |
20120286234 | Directionally Recrystallized Graphene Growth Substrates - Implementations and techniques for producing substrates suitable for growing graphene monolayers are generally disclosed. | 2012-11-15 |
20120286235 | NANOSCALE CHEMICAL TEMPLATING WITH OXYGEN REACTIVE MATERIALS - A method of fabricating templated semiconductor nanowires on a surface of a semiconductor substrate for use in semiconductor device applications is provided. The method includes controlling the spatial placement of the semiconductor nanowires by using an oxygen reactive seed material. The present invention also provides semiconductor structures including semiconductor nanowires. In yet another embodiment, patterning of a compound semiconductor substrate or other like substrate which is capable of forming a compound semiconductor alloy with an oxygen reactive element during a subsequent annealing step is provided. This embodiment provides a patterned substrate that can be used in various applications including, for example, in semiconductor device manufacturing, optoelectronic device manufacturing and solar cell device manufacturing. | 2012-11-15 |
20120286236 | SUPER LATTICE/QUANTUM WELL NANOWIRES - Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire. | 2012-11-15 |
20120286237 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER - According to one embodiment, a semiconductor light emitting device includes: an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The light emitting part is provided between the n-type semiconductor layer and the p-type semiconductor layer. The light emitting part includes: a plurality of well layers including In | 2012-11-15 |
20120286238 | LIGHTING DEVICES, AN OPTICAL COMPONENT FOR A LIGHTING DEVICE, AND METHODS - A white-light emitting lighting device comprising one or more light emitting light sources (preferably solid state semiconductor light emitting diodes) that emit off-white light during operation, wherein the off-white light includes a spectral output including at least one spectral component in a first spectral region from about 360 nm to about 475 nm, at least one spectral component in a second spectral region from about 475 nm to about 575 nm, and at least one deficiency in at least one other spectral region, and an optical component comprising an optical material for converting at least a portion of the off-white light to one or more predetermined wavelengths, such that light emitted by the lighting device comprises white light, wherein the optical material comprises quantum confined semiconductor nanoparticles. Also disclosed is an optical component, lighting fixture, a cover plate for a lighting fixture, and methods. | 2012-11-15 |
20120286239 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE INCLUDING THE SAME - Provided are a light emitting device and a light emitting device package including the same. The light emitting device comprises a first conductive type semiconductor layer, an active layer comprising a plurality of quantum well layers and a plurality of barrier layers, which are alternately laminated on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The plurality of barrier layers comprise a plurality of first barrier layers comprising an n-type dopant, and the conductive type dopant doped into the plurality of first barrier layers have different doping concentrations for each layer. | 2012-11-15 |
20120286240 | Methods of Fabricating Light Emitting Diode Packages - An LED array comprises a growth substrate and at least two separated LED dies grown over the growth substrate. Each of LED dies sequentially comprise a first conductive type doped layer, a multiple quantum well layer and a second conductive type doped layer. The LED array is bonded to a carrier substrate. Each of separated LED dies on the LED array is simultaneously bonded to the carrier substrate. The second conductive type doped layer of each of separated LED dies is proximate to the carrier substrate. The first conductive type doped layer of each of LED dies is exposed. A patterned isolation layer is formed over each of LED dies and the carrier substrate. Conductive interconnects are formed over the patterned isolation layer to electrically connect the at least separated LED dies and each of LED dies to the carrier substrate. | 2012-11-15 |
20120286241 | SUPPRESSION OF INCLINED DEFECT FORMATION AND INCREASE IN CRITICAL THICKNESS BY SILICON DOPING ON NON-C-PLANE (Al,Ga,In)N - A method for fabricating a III-nitride based semiconductor device, including (a) growing one or more buffer layers on or above a semi-polar or non-polar GaN substrate, wherein the buffer layers are semi-polar or non-polar III-nitride buffer layers; and (b) doping the buffer layers so that a number of crystal defects in III-nitride device layers formed on or above the doped buffer layers is not higher than a number of crystal defects in III-nitride device layers formed on or above one or more undoped buffer layers. The doping can reduce or prevent formation of misfit dislocation lines and additional threading dislocations. The thickness and/or composition of the buffer layers can be such that the buffer layers have a thickness near or greater than their critical thickness for relaxation. In addition, one or more (AlInGaN) or III-nitride device layers can be formed on or above the buffer layers. | 2012-11-15 |
20120286242 | NANOWIRE PIN TUNNEL FIELD EFFECT DEVICES - A nanowire tunnel device includes a nanowire suspended above a semiconductor substrate by a first pad region and a second pad region, the nanowire having a channel portion surrounded by a gate structure disposed circumferentially around the nanowire, an n-type doped region including a first portion of the nanowire adjacent to the channel portion, and a p-type doped region including a second portion of the nanowire adjacent to the channel portion. | 2012-11-15 |
20120286243 | FIELD-EFFECT TRANSISTOR, SINGLE-ELECTRON TRANSISTOR AND SENSOR - A field-effect transistor or a single electron transistor is used as sensors for detecting a detection target such as a biological compound. A substrate has a first side and a second side, the second side being opposed to the first side. A source electrode is disposed on the first side of the substrate and a drain electrode disposed on the first side of the substrate, and a channel forms a current path between the source electrode and the drain electrode. An interaction-sensing gate is disposed on the second side of the substrate, the interaction-sensing gate having a specific substance that is capable of selectively interacting with the detection target. A gate for applying a gate voltage adjusts a characteristic of the transistor as the detection target changes the characteristic of the transistor when interacting with the specific substance. | 2012-11-15 |
20120286244 | CARBON FIELD EFFECT TRANSISTORS HAVING CHARGED MONOLAYERS TO REDUCE PARASITIC RESISTANCE - Carbon transistor devices having channels formed from carbon nanostructures, such as carbon nanotubes or graphene, and having charged monolayers to reduce parasitic resistance in un-gated regions of the channels, and methods for fabricating carbon transistor devices having charged monolayers to reduce parasitic resistance. For example, a carbon field effect transistor includes a channel comprising a carbon nanostructure formed on an insulating layer, a gate structure formed on the channel, a monolayer of DNA conformally covering the gate structure and a portion of the channel adjacent the gate structure, an insulating spacer conformally formed on the monolayer of DNA, and source and drain contacts connected by the channel | 2012-11-15 |
20120286245 | Dynamic OLED Lighting - A flexible OLED is provided. The substrate on which the flexible OLED is deposited on may be expanded without plastic deformation. | 2012-11-15 |
20120286246 | CONDENSED-CYCLIC COMPOUND, ORGANIC LIGHT-EMITTING DEVICE COMPRISING THE SAME, AND FLAT PANEL DISPLAY APPARATUS - A condensed-cyclic compound represented by Formula 1 below, an organic light-emitting device including the same, and a flat panel display apparatus including the organic light-emitting device: | 2012-11-15 |
20120286247 | CONDENSED-CYCLIC COMPOUND, ORGANIC LIGHT-EMITTING DEVICE COMPRISING THE SAME, AND FLAT PANEL DISPLAY APPARATUS - A condensed-cyclic compound represented by Formula 1 below, an organic light-emitting device including the same, and a flat panel display apparatus including the organic light-emitting device: | 2012-11-15 |
20120286248 | ORGANIC LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - There are provided an organic light emitting diode and a method of manufacturing the same. The organic light emitting diode includes: an anode formed on a substrate; a protective layer having at least one inorganic material layer stacked therein, the at least one inorganic material layer containing at least one of a nano-clay and a graphite oxide; a light emitting polymer layer formed on the protective layer; and a cathode formed on the light emitting polymer layer. In the case of the organic light emitting diode, the injection concentration of holes may be controlled, such that the stability of an element may be improved and the lifespan thereof may be increased. | 2012-11-15 |
20120286249 | CONDENSED-CYCLIC COMPOUND, ORGANIC LIGHT-EMITTING DEVICE COMPRISING THE SAME, AND FLAT PANEL DISPLAY APPARATUS INCLUDING THE DEVICE - A condensed-cyclic compound is represented by Formula 1 below. An organic light-emitting device includes the condensed-cyclic compound. A flat panel display apparatus includes the organic light-emitting device. | 2012-11-15 |
20120286250 | MANUFACTURING METHOD FOR SUBSTRATE WITH ELECTRODE ATTACHED - A process for producing a substrate with electrode for an organic electroluminescent device comprising a low-refractive index layer, a functional layer, and a transparent electrode that are laminated in this order, the substrate being for an organic electroluminescent device wherein the refractive index n1 of the electrode, the refractive index n2 of the functional layer, and the refractive index n3 of the low-refractive index layer satisfy the following formula (1): | 2012-11-15 |
20120286251 | NOVEL COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - Embodiments of the present invention are directed to a compound represented by Formula 1, and an organic light-emitting device including an organic film that includes the compound of Formula 1: | 2012-11-15 |
20120286252 | Light-Emitting Element and Light-Emitting Device - Provided are a light-emitting element capable of reducing power consumption by increasing its light extraction efficiency and a light-emitting device using the light-emitting element. A light-emitting element includes a composite material, which contains an organic compound having a high hole-transport property and an electron acceptor and in which the spin density measured by an electron spin resonance (ESR) method is less than or equal to 1×10 | 2012-11-15 |
20120286253 | Organic Electronic Device and Method for the Production Thereof - An organic electronic device comprising: a substrate; ( | 2012-11-15 |
20120286254 | ELECTRONIC DEVICE COMPRISING METAL COMPLEXES - The present invention relates to electronic devices, in particular organic electroluminescent devices, comprising metal complexes of the formula (1), and to the preferred metal complexes. | 2012-11-15 |
20120286255 | ORGANIC EL ELEMENT AND ORGANIC EL PANEL - An organic EL element having a reflective layer, a first electrode, a light-emitting layer, a second electrode, and a semi-transparent reflective layer disposed in that order. The semi-transparent reflective layer comprises an optical adjustment layer formed of an insulating material which is provided so as to contact said second electrode on an opposite side from said light-emitting layer, and said optical adjustment layer has a refractive index at a wavelength of 450 nm of not less than 1.915, and has an optical film thickness, calculated as an arithmetic product of said refractive index and a film thickness, of not less than 70.174 nm and not more than 140.347 nm. | 2012-11-15 |
20120286256 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND ELECTRONIC APPLIANCE - An object of the present invention is to provide a light-emitting element with high luminous efficiency, and a light-emitting element of low-voltage driving. Another object is to provide a light-emitting device with low power consumption by using the light-emitting element. Another object is to provide an electronic appliance with low power consumption by using the light-emitting device in a display portion. A light-emitting element includes, between a pair of electrodes, a layer containing a composite material of a first organic compound and an inorganic compound and a layer containing a second organic compound being in contact with the layer containing the composite material, wherein the second organic compound does not have a peak of an absorption spectrum in a wavelength region of 450 to 800 nm if the second organic compound is compounded with the inorganic compound. | 2012-11-15 |
20120286257 | Quinoxaline Derivative, and Organic Semiconductor Device, Electric Field Light Emitting Device, and Electronic Device Which have the Same - Target is to provide an organic compound material having a bipolar character. | 2012-11-15 |
20120286258 | ORGANIC ELECTROLUMINESCENT ELEMENT AND LIGHTING DEVICE - An organic EL device ( | 2012-11-15 |
20120286259 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - Exemplary embodiments of the present invention provide a display substrate including a gate electrode, an oxide semiconductor pattern, a source electrode, a drain electrode, and an etch stop pattern. The gate electrode may be disposed on a base substrate. The oxide semiconductor pattern may be disposed over the gate electrode. The source electrode may be disposed on the oxide semiconductor pattern. The drain electrode may be disposed on the oxide semiconductor pattern and spaced apart from the source electrode. The etch stop pattern may be disposed over the gate electrode, the etch stop pattern may be overlapping a space between the source electrode and the drain electrode and may include a metal oxide. The reliability of the display substrate may, therefore, be improved. | 2012-11-15 |
20120286260 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A highly reliable transistor which includes an oxide semiconductor and has high field-effect mobility and in which a variation in threshold voltage is small is provided. By using the transistor, a high-performance semiconductor device, which has been difficult to realize, is provided. The transistor includes an oxide semiconductor film which contains two or more kinds, preferably three or more kinds of elements selected from indium, tin, zinc, and aluminum. The oxide semiconductor film is formed in a state where a substrate is heated. Further, oxygen is supplied to the oxide semiconductor film with an adjacent insulating film and/or by ion implantation in a manufacturing process of the transistor, so that oxygen deficiency which generates a carrier is reduced as much as possible. In addition, the oxide semiconductor film is highly purified in the manufacturing process of the transistor, so that the concentration of hydrogen is made extremely low. | 2012-11-15 |
20120286261 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a transistor including a wide band gap semiconductor layer as a semiconductor layer, a wide band gap semiconductor layer is separated into an island shape by an insulating layer with passivation properties for preventing atmospheric components from permeating. The edge portion of the island shape wide band gap semiconductor layer is in contact with the insulating film; thus, moisture or atmospheric components can be prevented from entering from the edge portion of the semiconductor layer to the wide band gap semiconductor layer. | 2012-11-15 |
20120286262 | DISPLAY DEVICE AND ELECTRONIC DEVICE - An object is, in a structure where switch circuits in a signal line driver circuit is placed over the same substrate as a pixel portion, to reduce the size of transistors in the switch circuits and to reduce load in the circuits during charging and discharging of signal lines due to the supply of data. A display device is provided which includes a pixel portion receiving a video signal, and a signal line driver circuit including a switch circuit portion configured to control output of the video signal to the pixel portion. The switch circuit portion includes a transistor over an insulating substrate. The transistor has a field-effect mobility of at least 80 cm | 2012-11-15 |
20120286263 | Semiconductor Device and Method of Manufacturing the Same - It is an object to form a buffer circuit, an inverter circuit, or the like using only n-channel TFTs including an oxide semiconductor layer. A buffer circuit, an inverter circuit, or the like is formed by combination of a first transistor in which a source electrode and a drain electrode each overlap with a gate electrode and a second transistor in which a source electrode overlaps with a gate electrode and a drain electrode does not overlap with the gate electrode. Since the second transistor has such a structure, the capacitance C | 2012-11-15 |
20120286264 | FLEXIBLE SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME AND IMAGE DISPLAY DEVICE - There is provided a method for manufacturing a flexible semiconductor device. The method of the present invention comprises the steps of: (a) preparing a metal foil having a concave portion; (b) forming a gate insulating film on a bottom face of the concave portion of the metal foil; (c) forming a semiconductor layer above the bottom face of the concave portion via the gate insulating film while making use of the concave portion as a bank member; and (d) forming a source electrode and a drain electrode such that they make contact with the semiconductor layer. | 2012-11-15 |
20120286265 | AMORPHOUS OXIDE THIN FILM, THIN FILM TRANSISTOR USING THE SAME, AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor using an amorphous oxide thin film for an active layer, wherein: the amorphous oxide thin film includes, as main components, indium (In), oxygen (O), and a metal element (M) selected from the group consisting of silicon (Si), aluminum (Al), germanium (Ge), tantalum (Ta), magnesium (Mg) and titanium (Ti); an atomic ratio of M to In in this amorphous oxide thin film is 0.1 or more and 0.4 or less; and carrier density in the amorphous oxide thin film is 1×10 | 2012-11-15 |
20120286266 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to manufacture a semiconductor device including an oxide semiconductor at low cost with high productivity in such a manner that a photolithography process is simplified by reducing the number of light-exposure masks In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. In etching steps, a first etching step is performed by wet etching in which an etchant is used, and a second etching step is performed by dry etching in which an etching gas is used. | 2012-11-15 |
20120286267 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In a method for manufacturing a semiconductor device including a channel-etched inverted-staggered thin film transistor, an oxide semiconductor film and a conductive film are etched using a mask layer formed with the use of a multi-tone mask which is a light-exposure mask through which light is transmitted so as to have a plurality of intensities. The etching step is performed by dry etching in which an etching gas is used. | 2012-11-15 |
20120286268 | DEMODULATION CIRCUIT AND RFID TAG INCLUDING THE DEMODULATION CIRCUIT - An object is to provide a demodulation circuit having a sufficient demodulation ability. Another object is to provide an RFID tag which uses a demodulation circuit having a sufficient demodulation ability. A material which enables a reverse current to be small enough, for example, an oxide semiconductor material, which is a wide bandgap semiconductor, is used in part of a transistor included in a demodulation circuit. By using the semiconductor material which enables a reverse current of a transistor to be small enough, a sufficient demodulation ability can be secured even when an electromagnetic wave having a high amplitude is received. | 2012-11-15 |
20120286269 | CHIP DAMAGE DETECTION DEVICE FOR A SEMICONDUCTOR INTEGRATED CIRCUIT - A chip damage detection device is provided that includes at least one bi-stable circuit having a first conductive line passing through an observed area of a semiconductor integrated circuit chip for damage monitoring of the observed area. The at least one bi-stable circuit is arranged to flip from a first stable state into a second stable state when a potential difference between a first end and a second end of the first conductive line changes or when a leakage current overdrives a state keeping current at the first conductive line. Further, a semiconductor integrated circuit device that includes the chip damage detection device and a safety critical system that includes the semiconductor integrated circuit device or the chip damage detection circuit is provided. | 2012-11-15 |
20120286270 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - It is an object to provide a semiconductor device in which a short-channel effect is suppressed and miniaturization is achieved, and a manufacturing method thereof. A trench is formed in an insulating layer and impurities are added to an oxide semiconductor film in contact with an upper end corner portion of the trench, whereby a source region and a drain region are formed. With the above structure, miniaturization can be achieved. Further, with the trench, a short-channel effect can be suppressed setting the depth of the trench as appropriate even when a distance between a source electrode layer and a drain electrode layer is shortened. | 2012-11-15 |
20120286271 | OXIDE THIN FILM TRANSISTOR RESISTANT TO LIGHT AND BIAS STRESS, AND A METHOD OF MANUFACTURING THE SAME - Disclosed are an oxide thin film transistor resistant to light and bias stress, and a method of manufacturing the same. The method includes forming a gate electrode on a substrate; forming a gate insulating layer on an upper part including the gate electrode; forming a source electrode and a drain electrode on the insulating layer; forming an active layer insulated from the gate electrode by the gate insulating layer and formed of an oxide semiconductor and a diffusion barrier film; and forming a protective layer on a portion of the source electrode and drain electrode and the upper part including the active layer, wherein the diffusion barrier film reduces movement of holes and prevents ionized oxygen vacancies from being diffused. | 2012-11-15 |
20120286272 | THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A thin film transistor includes a gate electrode on a substrate, a main active layer in electrical connection with the gate electrode and including an exposed channel portion, a source electrode in electrical connection with the main active layer, a drain electrode which is spaced apart from the source electrode and in electrical connection with the main active layer, and a sub active layer in electrical connection to the main active layer. | 2012-11-15 |
20120286273 | LIGHT EMITTING DEVICE, DRIVING METHOD OF LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE - By controlling the luminance of light emitting element not by means of a voltage to be impressed to the TFT but by means of controlling a current that flows to the TFT in a signal line drive circuit, the current that flows to the light emitting element is held to a desired value without depending on the characteristics of the TFT. Further, a voltage of inverted bias is impressed to the light emitting element every predetermined period. Since a multiplier effect is given by the two configurations described above, it is possible to prevent the luminance from deteriorating due to a deterioration of the organic luminescent layer, and further, it is possible to maintain the current that flows to the light emitting element to a desired value without depending on the characteristics of the TFT. | 2012-11-15 |
20120286274 | DISPLAY SUBSTRATE INCLUDING AN AUXILIARY ELECTRODE - A display substrate includes a data line, a main gate line, and a first sub-pixel electrode formed on a base substrate. The display substrate further includes a first switching element connected to the data line. The display substrate further includes a second switching element connected to the data line, the main gate line, and a second sub-pixel electrode spaced apart from the first sub-pixel electrode. The display substrate further includes a third switching element connected to the data line and a secondary gate line adjacent to the main gate line. The display substrate further includes a shielding line spaced apart from the first and second sub-pixel electrodes, the shielding line overlapping the data line and receiving a reference voltage. The display substrate further includes an auxiliary electrode extending from the shielding line and overlapping an end electrode connected to the third switching element. | 2012-11-15 |
20120286275 | DISPLAY DEVICE AND ELECTRONIC APPARATUS - A display device has pixels including electro-optical elements and transistors. Each pixel has a metal layer of a gate electrode of the transistor, a semiconductor layer in which a source region and a drain region of the transistor are formed, and a capacitance element formed between the same metal layer as the metal layer of the gate electrode and the semiconductor layer upon application of a voltage to the metal layer. | 2012-11-15 |
20120286276 | Semiconductor Device and Manufacturing Method Thereof - A p channel IFT of a driving circuit has a single drain structure and its n channel TFT, a GOLD structure or an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel portion is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an interlayer insulating film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks. | 2012-11-15 |
20120286277 | PIXEL STRUCTURE AND DISPLAY PANEL - A pixel structure and a manufacturing method thereof and a display panel are provided. An electrode material layer, a shielding material layer, an inter-layer dielectric material layer, a semiconductor material layer and a photoresist-layer are sequentially formed on a substrate. The semiconductor material layer, the inter-layer dielectric material layer, the shielding material layer and the electrode material layer are patterned using the photoresist-layer as a mask to form a semiconductor pattern, an inter-layer dielectric pattern, a shielding pattern and a pixel electrode. A source/drain electrically connected to the pixel electrode and covering a portion of the semiconductor pattern is formed on the pixel electrode. A channel is another portion of the semiconductor uncovered by the source/drain. A dielectric layer covering the source/drain, the semiconductor pattern, the inter-layer dielectric pattern, the shielding pattern and the pixel electrode and a gate disposed on the dielectric layer above the channel are formed. | 2012-11-15 |
20120286278 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE - In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented. | 2012-11-15 |
20120286279 | THIN FILM TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF - A thin film transistor device includes a first conductivity type thin film transistor and a second conductivity type thin film transistor. The first conductivity type thin film transistor includes a first patterned doped layer, a first gate electrode, a first source electrode, a first drain electrode and a first semiconductor pattern. The second conductivity type thin film transistor includes a second patterned doped layer, a second gate electrode, a second source electrode, a second drain electrode and a second semiconductor pattern. The first semiconductor pattern and the second semiconductor pattern form a patterned semiconductor layer. The first patterned doped layer is disposed under the first semiconductor pattern, and the second patterned doped layer is disposed on the second semiconductor pattern. | 2012-11-15 |
20120286280 | ACTIVE MATRIX LIQUID CRYSTAL DISPLAY DEVICE - A metal interconnection is located in the same layer as a source line and connected to the drain of a thin-film transistor. An interlayer insulating film is constituted of at least lower and upper insulating layers and formed between a conductive coating and the source line. According to one aspect of the invention, an auxiliary capacitor is formed by the metal interconnection and the conductive coating serving as both electrodes and at least the lower insulating layer serving as a dielectric. The auxiliary capacitor is formed in a region of the interlayer insulating film in which the upper insulating layer has been removed by etching. | 2012-11-15 |
20120286281 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device includes a thin film transistor (TFT) including an active layer, a gate electrode comprising a first electrode and a second electrode, a source electrode, and a drain electrode, a photoresist layer on the source electrode and the drain electrode, a pixel electrode electrically coupled to the TFT, comprising a same material as the first electrode, and at a same layer as the first electrode, a pixel defining layer having a hole exposing the pixel electrode, the pixel defining layer covering the photoresist layer, an intermediate layer on the pixel electrode and comprising a light-emitting layer, and an opposite electrode covering the intermediate layer and facing the pixel electrode. | 2012-11-15 |
20120286282 | THIN-FILM TRANSISTOR DEVICE MANUFACTURING METHOD, THIN-FILM TRANSISTOR DEVICE, AND DISPLAY DEVICE - A thin-film transistor device manufacturing method for forming a crystalline silicon film of stable crystallinity using a visible wavelength laser includes: a process of forming a plurality of gate electrodes above a substrate; a process of forming a silicon nitride layer on the plurality of gate electrodes; a process of forming a silicon oxide layer on the silicon nitride layer; a process of forming an amorphous silicon layer on the silicon oxide layer; a process of crystallizing the amorphous silicon layer using predetermined laser light to produce a crystalline silicon layer; and a process of forming a source electrode and a drain electrode on the crystalline silicon layer in a region that corresponds to each of the plurality of gate electrodes. A film thickness of the silicon oxide layer, a film thickness of the silicon nitride layer, and a film thickness of the amorphous silicon layer satisfy predetermined conditional expressions. | 2012-11-15 |
20120286283 | EL Display device and Method for Manufacturing the Same - Plurality of pixels ( | 2012-11-15 |
20120286284 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND WAFER - According to one embodiment, a semiconductor light emitting device includes: a foundation layer, a first semiconductor layer, a light emitting part, and a second semiconductor layer. The foundation layer includes a nitride semiconductor. The foundation layer has a dislocation density not more than 5×10 | 2012-11-15 |
20120286285 | METHOD OF IMPLANTING A WORKPIECE TO IMPROVE GROWTH OF A COMPOUND SEMICONDUCTOR - A workpiece is implanted to improve growth of a compound semiconductor, such as GaN. This workpiece may be implanted such that the workpiece has a dose at a center different from a dose at a periphery. This workpiece also may be implanted one or more times to form a pattern of lines, which may be a grid, a series of circles, or other shapes. The distance between certain pairs of lines may be different across the workpiece. | 2012-11-15 |
20120286286 | NON-POLAR NITRIDE-BASED LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - Disclosed are a non-polar nitride-based light emitting device and a method for fabricating the same. The non-polar nitride-based light emitting device includes a substrate, a first-type semiconductor layer on the substrate, an active layer on the active layer, a second-type semiconductor layer on the active layer, a light extraction layer on the second-type semiconductor layer and including at least one layer including indium having a plurality of unit structures having an inverted pyramidal intaglio shape, a first electrode electrically connected to the first-type semiconductor layer, and a second electrode electrically connected to the second-type semiconductor layer. | 2012-11-15 |
20120286287 | VERTICAL GALLIUM NITRIDE-BASED LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - The present disclosure provides a vertical GaN-based semiconductor diode and a method of manufacturing the same. The GaN-based πi-V group semiconductor device includes a substrate, a p-type ohmic electrode layer on the substrate, a p-type GaN-based πi-V group compound semiconductor layer on the p-type ohmic electrode layer, an n-type GaN-based πi-V group compound semiconductor layer on the p-type GaN-based πi-V group compound semiconductor layer, and an n-type ohmic electrode layer on the n-type GaN-based IE-V group compound semiconductor layer. The p-type ohmic electrode layer is an Ag-based highly reflective electrode having a high reflectivity of 70% or more, and a surface of the n-type GaN-based E-V group compound semiconductor layer is subjected to at least one of a process of forming photonic crystals and a process of surface roughening. | 2012-11-15 |
20120286288 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR ELEMENT - A semiconductor device includes a semiconductor element including a first element portion having a first gate and a second element portion having a second gate, wherein the turning on and off of the first and second element portions are controlled by a signal from the first and second gates respectively. The semiconductor device further includes signal transmission means connected to the first gate and the second gate and transmitting a signal to the first gate and the second gate so that when the semiconductor element is to be turned on, the first element portion and the second element portion are simultaneously turned on, and so that when the semiconductor element is to be turned off, the second element portion is turned off a delay time after the first element portion is turned off. | 2012-11-15 |
20120286289 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - The invention concerns a semiconductor device comprising a structure, wherein the structure comprising a substrate, a first layer onto the substrate comprising GaN and a second layer comprising AlGaN. The second layer is deposited onto the first layer and the first and the second layer cover at least partially the substrate, and wherein the structure comprises a third layer comprising diamond | 2012-11-15 |
20120286290 | SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE - A semiconductor element according to the present invention includes: a semiconductor substrate of a first conductivity type; a first silicon carbide semiconductor layer of the first conductivity type on the semiconductor substrate; a body region of a second conductivity type defined in the first silicon carbide semiconductor layer; an impurity region of the first conductivity type defined in the body region; a second silicon carbide semiconductor layer of the first conductivity type on the first silicon carbide semiconductor layer; a gate insulating film on the second silicon carbide semiconductor layer; a gate electrode on the gate insulating film; a first ohmic electrode connected to the impurity region; and a second ohmic electrode on the back surface of the semiconductor substrate. The body region includes first and second body regions. The average impurity concentration of the first body region is twice or more as high as that of the second body region. And the bottom of the impurity region is deeper than that of the first body region. | 2012-11-15 |
20120286291 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A silicon carbide semiconductor device having excellent electrical characteristics including channel mobility and a method for manufacturing the same are provided. The method for manufacturing a silicon carbide semiconductor device includes: an epitaxial layer forming step of preparing a semiconductor film of silicon carbide; a gate insulating film forming step of forming an oxide film on a surface of the semiconductor film; a nitrogen annealing step of performing heat treatment on the semiconductor film on which the oxide film is formed, in a nitrogen-containing atmosphere; and a post heat treatment step of performing, after the nitrogen annealing step, post heat treatment on the semiconductor film on which the oxide film is formed, in an atmosphere containing an inert gas. The heat treatment temperature in the post heat treatment step is higher than that in the nitrogen annealing step and lower than a melting point of the oxide film. | 2012-11-15 |
20120286292 | POWER SEMICONDUCTOR MODULE - A power semiconductor module in which temperature rise of switching elements made of a Si semiconductor can be suppressed low and efficiency of cooling the module can be enhanced. To that end, the power semiconductor module includes switching elements made of the Si semiconductor and diodes made of a wide-bandgap semiconductor, the diodes are arranged in the middle region of the power semiconductor module, and the switching elements are arranged in both sides or in the periphery of the middle region of the power semiconductor module. | 2012-11-15 |