46th week of 2009 patent applcation highlights part 37 |
Patent application number | Title | Published |
20090280534 | Recombinant Production of Serum Albumin - The present invention relates to modified nucleotide sequences encoding serum albumin, wherein the mRNA sequence has been codon optimized for expression in a filamentous host cell. Furthermore the present invention relates to serum albumin produced in filamentous fungi or loaded by contacting serum albumin with an extract of a filamentous fungi culture. In an-other aspect the present invention relates to the use of said serum albumin in serum free cell culture media and also to a method of drying and agglomerating serum albumin thereby im-proving wettability and dispersability. | 2009-11-12 |
20090280535 | SUMO Fusion Protein Expression System for Producing Native Proteins - A simple and efficient SUMO fusion protein expression system for producing native proteins. | 2009-11-12 |
20090280536 | EXPRESSION SYSTEM FOR PROTEINS - The invention provides a novel system for the tunable expression of nucleic acids encoding e.g., polypeptides such as recombinant proteins in prokaryotic systems. The system is based on the ability of T7 lysozyme (T7Lys) to inhibit the activity of T7RNAP. Expression of T7Lys can be continuously adjusted as its expression is under the control of a promoter whose activity can be titrated. The invention provides a host cell capable of expressing T7 RNA polymerase, the host cell comprising a first nucleic acid having a T7 lysozyme gene or a T7 lysozyme variant gene and a tunable promoter for controlling the expression of the T7 lysozyme gene. It also provides a host cell further comprising a second nucleic acid having a T7 promoter operably linked to a nucleic acid sequence encoding a target polypeptide, whereby expression of the target polypeptide is tuned via controlling the expression of the T7 lysozyme gene. | 2009-11-12 |
20090280537 | METHODS AND COMPOSITIONS FOR DETECTING DIHYDROPYRIMIDINE DEHYDROGENASE SPLICING MUTATIONS - The present invention provides methods, compositions and kits for the detection of genetic polymorphisms or mutations of the dihydropyrimidine dehydrogenase deficiency (DPDD). The polymorphisms or mutations generally occur in the dihydropyrimidine dehydrogenase (DPD) gene in chromosome 1. Also provided are mutant forms of DPD. | 2009-11-12 |
20090280538 | Methods and compositions for nucleic acid sample preparation - Provided are methods and compositions for the production of linear single-stranded nucleic acids, which can be used as templates in high-throughput sequencing systems. Also provided are methods and compositions for the production of closed single-stranded nucleic acid loops, which can be used as templates in high-throughput sequencing systems. | 2009-11-12 |
20090280539 | DNA POLYMERASES AND RELATED METHODS - Disclosed are mutant DNA polymerases having improved extension rates relative to a corresponding, unmodified polymerase. The mutant polymerases are useful in a variety of disclosed primer extension methods. The mutant polymerases overcome the inhibitory effects by an intercalating dye. Therefore, the mutant polymerases are useful in a variety of disclosed methods in combination with an intercalating dye. Also disclosed are related compositions, including recombinant nucleic acids, vectors, and host cells, which are useful, e.g., for production of the mutant DNA polymerases. | 2009-11-12 |
20090280540 | DIRECTED ENRICHMENT OF GENOMIC DNA FOR HIGH-THROUGHPUT SEQUENCING - The present invention provides microarrays of oligonucleotide primer pairs, and in particular, microarrays of primers that comprise at least one cleavable linkage. Also provided are methods to capture oligonucleotide primer pairs from one or more microarrays, and methods to use the captured oligonucleotide primer pairs, such as for amplification of a target polynucleotide sequence. In addition, methods of using a microarray to isolate, purify and/or amplify a target polynucleotide are provided. | 2009-11-12 |
20090280541 | Beta-xylosidase for conversion of plant cell wall carbohydrates to simple sugars - Xylose-containing plant material may be hydrolyzed to xylose using a β-D-xylosidase which exhibits unexpectedly high activity. The enzyme has a k | 2009-11-12 |
20090280542 | METHOD OF PRODUCTION OF L-AMINO ACIDS - An isolated polynucleotide encodes a polypeptide comprising the amino acid sequence of SEQ ID NO: 2, with the L-aspartic acid at position 5 of the amino acid sequence replaced by another proteinogenic amino acid, and possesses citrate synthase activity. In addition, a vector comprises the polynucleotide and a bacterium comprises the vector. An isolated polynucleotide comprises a nucleotide sequence comprising, from position 1 to 39, the nucleotide sequence corresponding to position 1 to 39 of SEQ ID NO: 11, from position 40 to 105, a nucleotide sequence encoding the amino acid sequence of SEQ ID NO: 12, with each proteinogenic amino acid except L-aspartic acid being present at position 5. A method of producing an L-amino acids is also described. | 2009-11-12 |
20090280543 | REGIOSELECTIVE GLYCOSYLATION - We describe a screening method for the identification of glycosyltransferase polypeptides that regioselectively modify aglycones and the use of said glycosyltransferase polypeptides to modify aglycones. | 2009-11-12 |
20090280544 | METHOD FOR PRODUCING OPTICALLY ACTIVE 2-BENZYLOXYCYCLOHEXYLAMINE - The present invention relates to a method for the enantioselective acylation of trans-2-benzyloxycyclohexylamine or cis-2-benzyloxycyclohexylamine, according to which an enantiomer mixture of 2-benzyloxycyclohexylamine is reacted with an acylation agent in the presence of a hydrolase. The invention also relates to a method for producing optically active trans-stereoisomers of 2-benzyloxycyclohexylamine. | 2009-11-12 |
20090280545 | MOLECULE PRODUCTION BY PHOTOSYNTHETIC ORGANISMS - The present invention provides compositions and methods for producing products by photosynthetic organisms. The photosynthetic organisms are genetically modified to effect production, secretion, or both, of products. The methods and compositions are particularly useful in the petrochemical industry. | 2009-11-12 |
20090280546 | YEAST STRAIN FOR PRODUCTION OF FOUR CARBON ALCOHOLS - Yeast cells with a reduced general control response to amino acid starvation were found to have increased tolerance to butanol in the growth medium. The reduced response was engineered by genetic modification of a gene involved in the response, a GCN gene, to eliminate activity of the encoded protein. Yeast strains with an engineered butanol biosynthetic pathway and a genetic modification in a gene involved in the general control response to amino acid starvation, which have increased butanol tolerance, are useful for production of butanol. | 2009-11-12 |
20090280547 | Cellooligosaccharide-fermentative zymobacter transformed microorganisms - This invention provides transformed microorganisms which can produce ethanol from cellooligosaccharide, by introducing β-glucosidase gene by recombinant DNA method, into microorganisms belonging to genus | 2009-11-12 |
20090280548 | METHOD AND DEVICE FOR PRODUCING HYDROGEN - In a step of contacting an organic material including formic acid ions and a carbon source other than the formic acid ions with a microorganism having a formate dehydrogenase gene and a hydrogenase gene under an anaerobic condition, concentration of the formic acid ions in the organic material is set to be not less than 0.01 mol/L and not more than 0.5 mol/L, and concentration of the carbon source is set to not less than 0.1 mmol/L and not more than 200 mmol/L. This allows continuously producing hydrogen for a long time, without dropping the ability of the microorganism to produce hydrogen. | 2009-11-12 |
20090280549 | Method for Treating Body Fluid - The invention provides a body fluid treatment method for selective ex vivo killing of malignant lymphoma cells, leukemia cells or activated macrophages in a body fluid, the body fluid treatment method comprising: an addition step wherein a compound represented by formula (I) below is added to a body fluid containing malignant lymphoma cells, leukemia cells or activated macrophages that has been removed from the body, to yield an addition mixture; and an excitation step wherein the addition mixture is irradiated with excitation light to excite the compound. According to the invention, there is provided a method for selective ex vivo killing of malignant lymphoma cells, leukemia cells or activated macrophages in a body fluid while avoiding adverse effects on normal cells. | 2009-11-12 |
20090280550 | Polymer-Factor IX Moiety Conjugates - Conjugates of a Factor IX moiety and one or more water-soluble polymers are provided. Typically, the water-soluble polymer is poly(ethylene glycol) or a derivative thereof. Also provided (among other things) are compositions comprising the conjugates, methods of making the conjugates, and methods of administering to a patient compositions comprising the conjugates. | 2009-11-12 |
20090280551 | A REAGENT FORMULATION USING RUTHENIUM HEXAMINE AS A MEDIATOR FOR ELECTROCHEMICAL TEST STRIPS - Described herein are various embodiments of a test strip, which may be capable of measuring an analyte. The test strip may include a working electrode and a reference electrode where the reagent formulation is disposed on the working electrode. The reagent formulation may be coated onto the test strip. The reagent formulation includes an enzyme, a ruthenium hexamine mediator, and a solution for dissolving the enzyme and the ruthenium hexamine mediator. The reagent formulation may be coated onto the test strip. The reagent formulation includes an enzyme, a ruthenium hexamine mediator, and a solution for dissolving the enzyme and the ruthenium hexamine mediator. The ruthenium hexamine has a concentration range from about 15% to about 20% (weight of mediator/volume) of solution. The enzyme may be either glucose oxidase and glucose dehydrogenase. | 2009-11-12 |
20090280552 | Methods and compositions for cancer therapy using a novel adenovirus - The invention comprises a novel virus that can kill mammalian cancer cells efficiently. The virus produces a novel protein that converts two non-toxic prodrugs into potent chemotherapeutic agents. These chemotherapeutic agents are produced locally and help the virus kill the cancer cells as well as sensitize them to radiation. In preclinical studies, the virus has proven effective at killing a variety of mammalian cancer cells either alone or when combined with prodrug therapy and/or radiation therapy. The invention may provide a safe and effective treatment for human cancer. | 2009-11-12 |
20090280553 | METHOD FOR DESIGNING MUTATED ENZYME, METHOD FOR PREPARING THE SAME, AND MUTATED ENZYME - It is intended to provide a novel method for improving an enzyme hydrolyzing an a-1,6-glycosidic linkage. A mutated enzyme is designed by specifying one or more amino acids selected from the group shown below in an amino acid sequence of an enzyme (an enzyme to be mutated) that hydrolyzes an a-1,6-glycosidic linkage, that is, the group consisting of an amino acid corresponding to an amino acid at the 292 position, an amino acid corresponding to an amino acid at the 371 position, an amino acid corresponding to an amino acid at the 406 position, an amino acid corresponding to an amino acid at the 407 position, an amino acid corresponding to an amino acid at the 437 position, an amino acid corresponding to an amino acid at the 465 position, an amino acid corresponding to an amino acid at the 475 position, an amino acid corresponding to an amino acid at the 476 position; an amino acid corresponding to an amino acid at the 525 position, an amino acid corresponding to an amino acid at the 526 position, an amino acid corresponding to an amino acid at the 580 position and an amino acid corresponding to an amino acid at the 582 position of the amino acid represented by in SEQ ID NO: 2 (step (1)) and constructing an amino acid sequence in which the amino acid(s) specified in the step (1) is/are substituted with another amino acid or deleted based on the amino acid sequence of the enzyme to be mutated (step (2)). | 2009-11-12 |
20090280554 | MODIFIED VITAMIN K-DEPENDENT POLYPEPTIDES - The invention provides vitamin K-dependent polypeptides with enhanced membrane binding affinity. These polypeptides can be used to modulate clot formation in mammals. Methods of modulating clot formation in mammals are also described. | 2009-11-12 |
20090280555 | ENZYME TREATMENT OF FOODSTUFFS FOR CELIAC SPRUE - Administering an effective dose of glutenase to a Celiac or dermatitis herpetiformis patient reduces levels of toxic gluten oligopeptides, thereby attenuating or eliminating the damaging effects of gluten. | 2009-11-12 |
20090280556 | Mesothelin, A Differentiation Antigen Present On Mesothelium, Mesotheliomas, and Ovarian Cancers and Methods and Kits for Targeting the Antigen - This invention relates to the discovery of a differentiation antigen termed mesothelin which is associated with mesotheliomas and ovarian cancers. Mesothelin is about 69 kD in its full-length form. The invention includes uses for the amino acid and nucleic acid sequences for mesothelin, recombinant cells expressing it, methods for targeting and/or inhibiting the growth of cells bearing mesothelin, methods for detecting the antigen and its expression level as an indication of the presence of tumor cells, and kits for such detection. | 2009-11-12 |
20090280557 | Method, a device, and an additive for digesting organic matter - A method of producing biogas by anaerobic digestion of organic matter may include adding cobalt, iron, and hydrochloric acid to an organic matter; bringing the organic matter in contact with biogas-producing bacteria; and digesting the organic matter under anaerobic conditions in a reactor while producing biogas and a digested sludge. A device for producing biogas may include a reactor being adapted for containing the organic matter in the form of a sludge while the sludge is digested. The device includes a feeding device for adding cobalt, iron, and hydrochloric acid to the organic matter, and an agitator for mixing the added cobalt, iron and hydrochloric acid with the organic matter. An additive, which is adapted for being added to a device for producing biogas by anaerobic digestion, may include cobalt, iron, and hydrochloric acid in an aqueous solution. | 2009-11-12 |
20090280558 | Process For Dynamic Kinetic Resolution (DKR) Of Racemic Compounds In (Hydro) Fluorocarbon Solvents - A process for preparing a third compound stereo-selectively which process comprises reacting a substrate comprising a first enantiomeric compound with a racemisation catalyst to give a second enantiomeric compound, and concurrently reacting the second enantiomeric compound in the presence of a biological catalyst to give the third compound, wherein the process is performed in a solvent comprising at least one (hydro) fluorocarbon. The biological catalyst is preferably an enzyme. The substrate preferably comprises a racemate of the first and second enantiomeric compounds. The second enantiomeric compound may be reacted with a reagent, such as acyl donor, to form the third compound in the presence of the biological catalyst. | 2009-11-12 |
20090280559 | GENETIC SEQUENCER INCORPORATING FLUORESCENCE MICROSCOPY - A fluorescence microscopy sequencer comprises a fluid transport subsystem in which reagents are pumped through a series of multi-port valves to a mixer or one or more flow cells, or directly into the flow cell(s). The one or more multi-port valves can be mounted upon a fluids manifold having syringe tubes mounted on the opposite side. Mounted on a movable support, the manifold may be brought into and out of fluid communication with a storage block comprising the plurality of reagents. In another embodiment, the sequencer comprises a beamsplitter indexer that facilitates the quick and reliable switching of filter cubes through use of a stepper motor. In yet another embodiment, a motion control system is provided in which an inertial reference is interposed between and directly coupled to a first and second axis of control, thereby minimizing any low structural resonant frequencies and enabling high performance (high frequency response) motion control. | 2009-11-12 |
20090280560 | Yeast cell surface display of proteins and uses thereof - The present invention provides a genetic method for tethering polypeptides to the yeast cell wall in a form accessible for binding to macromolecules. Combining this method with fluorescence-activated cell sorting provides a means of selecting proteins with increased or decreased affinity for another molecule, altered specificity, or conditional binding. Also provided is a method for genetic fusion of the N terminus of a polypeptide of interest to the C-terminus of the yeast Aga2p cell wall protein. The outer wall of each yeast cell can display approximately 10 | 2009-11-12 |
20090280561 | FUSION PROTEIN OF HIV REGULATORY/ACCESSORY PROTEINS - The invention relates to fusion proteins comprising the amino acid sequence of at least three HIV proteins selected from Vif, Vpr, Vpu, Rev, and Tat or derivatives of the amino acid sequence of one or more of said proteins, wherein the fusion protein is not processed to individual HIV proteins having the natural N and C termini. The invention further concerns nucleic acids encoding said proteins, vectors comprising said nucleic acids, and methods for producing said proteins. The fusion protein, nucleic acids and vectors are usable as vaccines for the at least partial prophylaxis against HIV infections. | 2009-11-12 |
20090280562 | MATERIALS AND METHODS FOR PREPARING DIMERIC GROWTH FACTORS - Proteins consisting of, from amino to carboxyl terminus, a first PDGF-D growth factor domain polypeptide, a linker polypeptide, and a second PDGF-D growth factor domain polypeptide, and materials and methods for making the proteins are disclosed. Each of the first and second PDGF-D growth factor domain polypeptides consists of a sequence of amino acid residues as shown in SEQ ID NO:2 or SEQ ID NO:4 from amino acid x to amino acid y, wherein x is an integer from 246 to 258, inclusive, and y is an integer from 365-370, inclusive. The linker polypeptide consists of from 11-40 amino acid residues. The proteins can be used to stimulate the production of bone and/or connective tissue in both humans and non-human animals. | 2009-11-12 |
20090280563 | METHOD FOR PRODUCTION OF ANTIGEN-SPECIFIC HYBRIDOMA USING ARTIFICIAL LYMPH NODE WITH GOOD EFFICIENCY - Provided herein is a method for efficiently producing a hybridoma producing a specific antibody using an artificial lymph node. | 2009-11-12 |
20090280564 | METHOD FOR INDUCING DIFFERENTIATION OF MESODERMAL STEM CELLS, ES CELLS, OR IMMORTALIZED MESODERMAL STEM CELLS INTO NEURAL CELLS - Mesodermal stem cells or ES cells, prepared from the mononuclear cell fraction isolated from bone marrow fluid or umbilical blood, were found to differentiate into neural stem cells, neurons, or glial cells when cultured in a basal culture medium. In addition, the differentiation of the mesodermal stem cells or ES cells into neural cells was promoted through the addition of an ischemic brain extract to the above-mentioned basal culture medium. Furthermore, the neural cells obtained using the above-described method for inducing differentiation were revealed to have neural regeneration potency in a brain infarction model, a dementia model, a spinal cord injury model and a demyelination model. | 2009-11-12 |
20090280565 | HIGH-RATE PERFUSION BIOREACTOR - The present invention relates to a novel perfusion bioreactor allowing continuous medium feed and extraction of metabolites or other desired products from cells. The invention is useful for plant cell cultures but may also be used for mammalian cell cultures, insect cell cultures and bacterial cell cultures. The design of the reactor includes sedimentation columns mounted inside the bioreactor to separate single cells and cell aggregates from the culture medium at a very low shear stress. The operating conditions allow a stable cell/medium separation by maintaining the medium upward velocity equal to or slightly lower than the cell sedimentation velocity. | 2009-11-12 |
20090280566 | METHODS FOR INCREASING GERMINATION FREQUENCY AND/OR VIGOR BY COLD SHOCK TREATMENT OF CONIFER SOMATIC EMBRYOS DURING DEVELOPMENT - In one aspect, a method is provided for increasing germination vigor and/or frequency of conifer somatic embryos produced in vitro. The method comprises (a) incubating a plurality of immature conifer somatic embryos for a first incubation period in, or on, a first development media at a temperature in the range of 20° C. to 30° C.; (b) exposing the plurality of immature conifer somatic embryos incubated in accordance with step (a) to a cold temperature in the range of 0° C. to 10° C. for a time period of at least one week; and (c) incubating the plurality of immature conifer somatic embryos treated in accordance with step (b) for a second incubation period in, or on, a second development medium at a temperature in the range of 20° C. to 30° C. | 2009-11-12 |
20090280567 | STABILIZED SIRNAS AS TRANSFECTION CONTROLS AND SILENCING REAGENTS - RNA molecules, including siRNA molecules and related control, trackability and exaequo agents with specific stability modifications are provided. These molecules are particularly advantageous as transfection control reagents. The molecules include first and second 5′ terminal sense nucleotides with 2′-O-alkyl groups and a label on the first 5′ terminal sense nucleotide, in conjunction with at least one additional 2′-O-alkyl pyrimidine modified sense nucleotide, and either: (i) at least one 2′ fluoro modified pyrimidine antisense nucleotide and a phosphorylated first 5′ terminal antisense nucleotide; or (ii) a first and second 5′ terminal antisense nucleotide with 2′-O-alkyl modifications and at least one additional 2′-O-alkyl pyrimidine modified antisense nucleotide. | 2009-11-12 |
20090280568 | S100B mini-promoters - Isolated polynucleotides comprising an S100B promoter are provided, where an S100B regulatory element is operably joined to an S100B basal promoter utilizing a non-native spacing between the promoter and regulatory elements. The promoter may be operably linked to an expressible sequence, e.g. reporter genes, genes encoding a polypeptide of interest, regulatory RNA sequences such as miRNA, siRNA, anti-sense RNA, etc., and the like. In some embodiments a cell comprising a stable integrant of an expression vector is provided, which may be integrated in the genome of the cell. The promoter may also be provided in a vector, for example in combination with an expressible sequence. The polynucleotides find use in a method of expressing a sequence of interest, e.g. for identifying or labeling cells, monitoring or tracking the expression of cells, etc. | 2009-11-12 |
20090280569 | Chloramphenicol Resistance Selection in Bacillus Licheniformis - The present invention relates to a modified | 2009-11-12 |
20090280570 | METHOD FOR TESTING EFFICACY OF ANTITHROMBOTIC AGENT - The present invention provides a method for testing quickly and easily the manner in which an antithrombotic agent inhibits the acceleration of blood coagulation when a platelet agonist causes acceleration of blood coagulation. The invention is a test method wherein a system in which an anticoagulant is added to a portion of blood sampled from a patient being administered an antithrombotic agent (X system blood), and a system in which an anticoagulant and adenosine diphosphate or collagen are added to a portion of the abovementioned blood (Y system blood) are simultaneously measured by thromboelastograph; and the efficacy of the antithrombotic agent is assessed by comparing the R values of the X system blood and the Y system blood. If the R value of the Y system blood is not found to differ significantly from the R value of the X system blood, the drug is judged to be working. Adenosine diphosphate and collagen can be used as the anticoagulant. The present invention provides a heretofore unknown method for easily assessing the efficacy of an antithrombotic agent. | 2009-11-12 |
20090280571 | MICROELECTRONIC DEVICE WITH MAGNETIC MANIPULATOR - The invention relates to a microelectronic device, particularly to a magnetic biosensor ( | 2009-11-12 |
20090280572 | Analysis device - A device is disclosed, being an analysis device for the study of biological or chemical samples by means of a reagent liquid supplied via a pipette. The device has an instrument housing with a base plate, a working plate arranged on the base plate horizontally to receive the samples in a sample holder having several wells, a robot manipulator arranged above the working plate, which carries a horizontal support arm with a slide. A needle system is fastened to the slide and can move in the Z direction, carrying 3 needles and being brought into vertical positions by a first vertical drive. The needle tips can be placed in an upper position above and in a lower position below a well. The middle needle can move vertically relative to the other two needles, which can be raised and lowered by a second vertical drive. The horizontal spacing of the three needles is so small that all three needles can be positioned with their tips inside the same wells. In particular, the working plate is mounted on the base plate so that it can turn. | 2009-11-12 |
20090280573 | Structure for Introducing a Plurality of Solutions, Micro Fluidic Device Having Said Structure and Method for Introducing Solution - The present invention relates to a solution introducing structure for introducing a plurality of solutions (a sample and/or a reagent solution) in highly accurate volume, in high amount and simply, into a channel ( | 2009-11-12 |
20090280574 | Apparatus for Indicating The Presence of a Controlled Substance and Method of Use - An apparatus for indicating the presence of a controlled substance is disclosed for use in medical facilities licensed to administer controlled medications to patients. The apparatus contains an indicator element selected to experience a color changing chemical reaction when mixed with a specific type of medication. A medical professional can inject a portion of any unused medication into the apparatus prior to final disposal to prove that the disposed of medication is not some other compound. | 2009-11-12 |
20090280575 | METHOD FOR QUANTITATIVE MEASUREMENT OF THYROID HORMONES AND RELATED ANTIBODIES IN A SERUM SAMPLE - This invention discloses using SPR technology to simultaneously and quantitatively measure the concentrations of thyroid hormones and related antibodies in a serum sample, which can be used to evaluate thyroid functions and to diagnose thyroid diseases. It also discloses an efficient formula to make a mixed SAM that can greatly enhance the immobilization ability of the metal surface in SPR based techniques, which is good for the immobilization of relevant antibodies and antigens used for the detection of respective thyroid hormones and related antibodies in a serum sample. | 2009-11-12 |
20090280576 | Analyte assaying by means of immunochromatography with lateral migration - The invention relates to a device for determining an analyte in a liquid sample. The inventive device consists of: a capillary action means, involving lateral migration, defining a reference capillary action direction and comprising a liquid sample deposit area and an analyte-detection area which is disposed downstream of the deposit area; a first analyte-specific binding reagent which is conjugated to a visible and/or measurable marker and which is free to migrate when wet by means of capillary action in the above-mentioned capillary actions means along the reference direction; and a second analyte-specific binding reagent which is immobilized in the detection area. The invention is characterized in that the detection area comprises the analyte or an analogue of the analyte, which is immobilized and disposed at a distance from the second specific binding reagent. | 2009-11-12 |
20090280577 | Manufacturing method of a semiconductor device - There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3° or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5° or less, and a capacitor upper electrode. | 2009-11-12 |
20090280578 | FERROELECTRIC MEMORY DEVICE AND FABRICATION PROCESS THEREOF, FABRICATION PROCESS OF A SEMICONDUCTOR DEVICE - A ferroelectric memory device includes a field effect transistor formed on a semiconductor substrate, an interlayer insulation film formed on the semiconductor substrate so as to cover the field effect transistor, a conductive plug formed in the interlayer insulation film in contact with the first diffusion region, and a ferroelectric capacitor formed over the interlayer insulation in contact with the conductive plug, wherein the ferroelectric capacitor includes a ferroelectric film and upper and lower electrodes sandwiching the ferroelectric film respectively from above and below, the lower electrode being connected electrically to the conductive plug, a layer containing oxygen being interposed between the conductive plug and the lower electrode, a layer containing nitrogen being interposed between the layer containing oxygen and the lower electrode, a self-aligned layer being interposed between the layer containing nitrogen and the lower electrode. | 2009-11-12 |
20090280579 | METHOD OF CONTROLLING EMBEDDED MATERIAL/GATE PROXIMITY - A method that includes forming a gate of a semiconductor device on a substrate and forming a recess for an embedded silicon-straining material in source and drain regions for the gate. In this method, a proximity value, which is defined as a distance between the gate and a closest edge of the recess, is controlled by controlling formation of an oxide layer provided beneath the gate. The method can also include feedforward control of process steps in the formation of the recess based upon values measured during the formation of the recess. The method can also apply feedback control to adjust a subsequent recess formation process performed on a subsequent semiconductor device based on the comparison between a measured proximity value and a target proximity value to decrease a difference between a proximity value of the subsequent semiconductor device and the target proximity value. | 2009-11-12 |
20090280580 | CMP PAD THICKNESS AND PROFILE MONITORING SYSTEM - In one embodiment a method is provided for maintaining a substrate processing surface. The method generally includes performing a set of measurements on the substrate processing surface, wherein the set of measurements are taken using a displacement sensor coupled to a processing surface conditioning arm, determining a processing surface profile based on the set of measurements, comparing the processing surface profile to a minimum profile threshold, and communicating a result of the profile comparison. | 2009-11-12 |
20090280581 | Detection of arcing events in wafer plasma processing through monitoring of trace gas concentrations - A method of detecting substrate arcing in a semiconductor plasma processing apparatus is provided. A substrate is placed on a substrate support in a reaction chamber of a plasma processing apparatus. Process gas is introduced into the reaction chamber. A plasma is generated from the process gas and the substrate is processed with the plasma. Intensities of real-time spectrometry signals of selected gas species produced in the reaction chamber during plasma processing are monitored. The selected gas species are generated by a substrate arcing event. The arcing event is detected when the intensities are above a threshold value. | 2009-11-12 |
20090280582 | Design Methodology for MuGFET ESD Protection Devices - A method for manufacturing a MuGFET ESD protection device having a given layout by means of a given manufacturing process, the method comprising selecting multiple interdependent layout and process parameters of which a first set are fixed by said manufacturing process and a second set are variable, selecting multiple combinations of possible layout and process parameter values which meet predetermined ESD constraints; determining an optimum value for at least one other parameter in view of a predetermined design target apart from the predetermined ESD constraints; determining values for fin width (W | 2009-11-12 |
20090280583 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device according to one embodiment includes: forming a plurality of Si-based pattern portions above a semiconductor substrate, the plurality of Si-based pattern portions being adjacent in a direction substantially parallel to a surface of the semiconductor substrate via insulating films; forming a metal film above the plurality of Si-based pattern portions and the insulating films so as to contact with the plurality of Si-based pattern portions; processing whole areas or upper portions of the plurality of Si-based pattern portions into a plurality of silicide layers by a silicidation reaction between the plurality of Si-based pattern portions and the metal film by heat treatment; and removing the plurality of silicide layers formed above the insulating films by applying planarizing treatment to the plurality of silicide layers. | 2009-11-12 |
20090280584 | WAFER PROCESSING - Methods for processing semiconductor wafers are described herein. One embodiment includes removing portions of a first side of the semiconductor wafer to form a number of trenches of a particular depth in rows and columns. The method further includes forming a passivation layer on side walls of the number of trenches. The method also includes cutting a second side of the semiconductor wafer in rows and columns aligned with the number of trenches such that the semiconductor wafer singulates into a number of dice. | 2009-11-12 |
20090280585 | HIGH-DENSITY FIELD EMISSION ELEMENTS AND A METHOD FOR FORMING SAID EMISSION ELEMENTS - A method for forming high density emission elements and field emission displays formed according to the method. Oxygen and a silicon etchant are introduced into a plasma etching chamber containing a silicon substrate. The oxygen reacts with the silicon surface to form regions of silicon dioxide, while the silicon etchant etches the silicon to form the emission elements. The silicon dioxide regions mask the underlying silicon during the silicon etch process. High density and high aspect ratio emission elements are formed without using photolithographic processes. The emission elements formed according to the present invention provide a more uniform emission of electrons. Further, a display incorporating emission elements formed according to the present invention provides increased brightness. The reliability of the display is increased due to the use of a plurality of emission elements to supply electrons for stimulating the phosphor substrate material to produce the image. | 2009-11-12 |
20090280586 | Methods for depositing nanomaterial, methods for fabricating a device, and methods for fabricating an array of devices - A method comprising depositing an ink comprising a nanomaterial and a liquid vehicle from a micro-dispenser onto a layer of a device is disclosed. A method comprising depositing an ink comprising a nanomaterial and a liquid vehicle from a micro-dispenser onto a material capable of transporting charge in a predetermined arrangement is also disclosed. Methods for fabricating devices including nanomaterials are also disclosed. In certain preferred embodiments, the nanomaterial comprises semiconductor nanocrystals. In certain preferred embodiments, a micro-dispenser comprises an inkjet printhead. | 2009-11-12 |
20090280587 | METHOD OF TREATING SODA-LIME GLASS SUBSTRATE AND METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE SAME - A method of treating a soda-lime glass (SLG) substrate includes cleaning the SLG substrate using an alkali cleaning solution and cleaning the cleaned SLG substrate using a plasma process. The SLG substrate is cleaned using the alkali cleaning solution to remove particles adhered to the SLG substrate. Thus, defects due to the adhering particles may be reduced. | 2009-11-12 |
20090280588 | METHOD OF FORMING AN ELECTRONIC DEVICE INCLUDING REMOVING A DIFFERENTIAL ETCH LAYER - A method of forming an electronic device can include forming a metallic layer over a side of a workpiece including a substrate, a differential etch layer, and a semiconductor layer. The differential etch layer may lie between the substrate and the semiconductor layer, and the semiconductor layer may lie along the side of the workpiece. The process can further include selectively removing at least a majority of the differential etch layer from between the substrate and the semiconductor layer, and separating the semiconductor layer and the metallic layer from the substrate. The selective removal can be performed using a wet etching, dry etching, or electrochemical technique. In a particular embodiment, the same plating bath may be used for plating the metallic layer and selectively removing the differential etch layer. | 2009-11-12 |
20090280589 | Method for Manufacturing Light-Emitting Device - An object is to provide a method for manufacturing a light-emitting device with high definition, high light-emitting characteristics, and the long lifetime by employing a method in which a desired evaporation pattern can be formed and an excess evaporation of a material layer which is to be the transfer layer is prevented and in which deterioration of the material or the like is hard to occur in a transfer step. This is a method for manufacturing a light-emitting device, in which irradiation with first light is performed to pattern a material layer over a first substrate which is an evaporation donor substrate and irradiation with second light is performed to evaporate the material layer patterned onto a second substrate which is a deposition target substrate. | 2009-11-12 |
20090280590 | ORGANIC LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting device (OLED) and a method of fabricating the same are provided, wherein the OLED includes a thin film transistor having a gate electrode, and source and drain electrodes on a substrate; a triple-layered pixel electrode connected to one of the source and drain electrodes through a via-contact hole formed in an insulating layer on the substrate, and having a lower pixel electrode, a reflective layer pattern and an upper pixel electrode; an organic layer disposed on the upper pixel electrode and having at least an emission layer; and an opposite electrode disposed on the organic layer. | 2009-11-12 |
20090280591 | METHOD OF MANUFACTURING A DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING A DISPLAY APPARATUS USING THE SAME - Provided is a method of manufacturing a display substrate. In the method, a gate line, a data line crossing the gate line, and a switching device are formed on a base substrate. A passivation layer, a first resist layer and a second resist layer are formed on the base substrate. The first resist layer and the second resist layer are patterned to form a resist pattern and an etch-stop pattern, the etch-stop pattern having a sidewall protruding from a sidewall of the resist pattern. A portion of the passivation layer is removed to form a contact hole on a drain electrode of the switching device. A pixel electrode electrically connected to the switching device through the contact hole is formed. Thus, an undercut between an etch-stop pattern and a resist pattern may be more easily formed without over-etching a passivation layer. | 2009-11-12 |
20090280592 | Nanoparticle structure and manufacturing process of multi-wavelength light emitting devices - A structure of multi-wavelength light emitting device comprises multi-stacked active layer structure. Each stacked layer comprises lower energy bandgap well | 2009-11-12 |
20090280593 | MATRIX NANOCOMPOSITE SENSING FILM FOR SAW/BAW BASED HYDROGEN SULPHIDE SENSOR AND METHOD FOR MAKING SAME - A method can be adapted for design and preparation of a matrix nanocomposite sensing film for hydrogen sulphide SAW/BAW detection at room temperature. A matrix nanocomposite can be synthesized by incorporating both single-wall and multi-wall thiolated carbon nanotubes into conductive organic polymers or ceramic nanocrystalline in a properly functionalized manner. A thin organic sensing film can be prepared based on the matrix nanocomposite. The matrix nanocomposite sensing film can be prepared on a surface of a SAW/BAW device by an additive process or a direct printing process. Finally, the sensing film can be consolidated by thermal annealing or laser annealing under ambient conditions in order to obtain the stable sensing film with higher sensitivity and electrical properties for a SAW/BAW based H | 2009-11-12 |
20090280594 | THREE-AXIS ACCELEROMETERS AND FABRICATION METHODS - Disclosed are MEMS accelerometers and methods for fabricating same. An exemplary accelerometer comprises a substrate, and a proof mass that is a portion of the substrate and which is separated from the substrate surrounding it by a gap. An electrically-conductive anchor is coupled to the proof mass, and a plurality of electrically-conductive suspension anus that are separated from the proof mass extend from the anchor and are coupled to the substrate surrounding the proof mass. A plurality of sense and actuation electrodes are separated from the proof mass by gaps and are coupled to processing electronics. Capacitive sensing is used to derive electrical signals caused by forces exerted on the proof mass, and the electrical signals are processed by the processing electronics to produce x-, y- and z-direction acceleration data. Electrostatic actuation is used to induce movements of the mass for force balance operation, or self-test and self-calibration. The fabrication methods use deep reactive ion etch bulk micromachining and surface micromachining to form the proof mass, suspension arms and electrodes. The anchor, suspension arms and electrodes are made in the same process steps from the same electrically conductive material, which is different from the substrate material. | 2009-11-12 |
20090280595 | Process for assembling wafers by means of molecular adhesion - The invention relates to a process of bonding by molecular adhesion of two layers, such as wafers of semiconductor material, wherein propagation of a first bonding wave is initiated from a pressure point applied to at least one of the two layers, and wherein the first bonding wave step is followed by propagating a second bonding wave over an area, for example, in the vicinity of the pressure point. Propagation of the second bonding wave may be obtained through the interposing of a separation element between the two wafers and the withdrawal of the element, for example, after the beginning of the first bonding wave propagation. | 2009-11-12 |
20090280596 | METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING ELECTRONIC APPARATUS - A method of manufacturing a solid-state imaging device, where a signal circuit is formed on an insulating interlayer on a first side of a semiconductor substrate in which a photoelectric conversion part is formed and light is incident on the photoelectric conversion part from a second side thereof. The method includes the steps of: forming an on-chip color filter and an on-chip microlens on the second side where light is incident; and forming an opening in a pad part on the second side where light is incident. | 2009-11-12 |
20090280597 | Surface cleaning and texturing process for crystalline solar cells - Methods for surface texturing a crystalline silicon substrate are provided. In one embodiment, the method includes providing a crystalline silicon substrate, wetting the substrate with an alkaline solution comprising a wetting agent, and forming a textured surface with a structure having a depth about 1 μm to about 10 μm on the substrate. In another embodiment, a method of performing a substrate texture process includes providing crystalline silicon substrate, pre-cleaning the substrate in a HF aqueous solution, wetting the substrate with a KOH aqueous solution comprising polyethylene glycol (PEG) compound, and forming a textured surface with a structure having a depth about 3 μm to about 8 μm on the substrate. | 2009-11-12 |
20090280598 | Formation of Copper-Indium-Selenide and/or Copper-Indium-Gallium-Selenide Films from Indium Selenide and Copper Selenide Precursors - Liquid-based indium selenide and copper selenide precursors, including copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticlulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent, are used to form crystalline copper-indium-selenide, and/or copper indium galium selenide films ( | 2009-11-12 |
20090280599 | PHASE CHANGE MEMORY DEVICE AND METHOD OF FABRICATION - A phase change memory device includes a bottom electrode on a substrate, a phase change material pattern on the bottom electrode, and a top electrode on the phase change material pattern. The phase change material pattern includes at least 50 percent antimony (Sb). | 2009-11-12 |
20090280600 | AMORPHOUS OXIDE AND THIN FILM TRANSISTOR - The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10 | 2009-11-12 |
20090280601 | METHOD AND APPARATUS FOR FACILITATING PROXIMITY COMMUNICATION AND POWER DELIVERY - The described embodiments provide a system that facilitates inter-chip alignment for proximity communication and power delivery. The system includes a first integrated circuit chip and a second integrated circuit chip, both of which whose surfaces have corresponding etch pit wells configured to align with each other. A shaped structure is placed in an etch pit well of the first integrated circuit chip such that when the corresponding etch pit well of the second integrated circuit chip is substantially aligned with the etch pit well of the first integrated circuit chip, the shaped structure mates with both the etch pit well of the first integrated circuit chip and with the corresponding etch pit well of the second integrated circuit chip, thereby aligning the first integrated circuit chip with the second integrated circuit chip. In some embodiments the etch pit wells include conductive structures for routing power through a conductive shaped structure. | 2009-11-12 |
20090280602 | DOUBLE WAFER CARRIER PROCESS FOR CREATING INTEGRATED CIRCUIT DIE WITH THROUGH-SILICON VIAS AND MICRO-ELECTRO-MECHANICAL SYSTEMS PROTECTED BY A HERMETIC CAVITY CREATED AT THE WAFER LEVEL - A TSV-MEMS packaging process is provided. The process includes forming TSVs in the front side of the product wafer, and attaching a first carrier to the front side of the product wafer, subsequent to forming TSVs. The process further includes thinning the back side of the product wafer to expose TSV tips, detaching the first carrier from the front side of the product wafer, and transferring the thinned wafer to a second carrier with back side adhered to the second wafer carrier. Semiconductor components are added to the front side of the product wafer, followed by forming a hermetic cavity over the added semiconductor components, and detaching the second carrier from the back side of the product wafer. Wafer level processing continues after detaching the second carrier. | 2009-11-12 |
20090280603 | METHOD OF FABRICATING CHIP PACKAGE - A method of fabricating a chip package is provided. A thin metal plate having a first protrusion part, a second protrusion part and a plurality of third protrusion parts are provided. A chip is disposed on the thin metal plate, and a plurality of bonding wires for electrically connecting the chip to the second protrusion part and the second protrusion part to the third protrusion parts is formed. An upper encapsulant and a lower encapsulant are formed on the upper surface and the lower surface of the thin metal plate respectively. The lower encapsulant has a plurality of recesses for exposing a portion of the thin metal plate at locations where the first protrusion part, the second protrusion part and the third protrusion parts are connected to one another. Finally, the thin metal plate is etched by using the lower encapsulant as an etching mask. | 2009-11-12 |
20090280604 | Heat radiation structure of semiconductor device, and manufacturing method thereof - The invention of the present application provides a heat radiation structure of a semiconductor device, comprising a substrate having, on a surface thereof, a first area on which the semiconductor device is mounted, and a second area which surrounds the first area, and the semiconductor device which has a first surface and a second surface opposite to the first surface and is formed with a plurality of terminals provided on the first surface, wherein the semiconductor device is mounted on the substrate in such a manner that the first surface is opposite to the surface of the substrate, and wherein a first heat radiating film is formed on the second area of the substrate, and a second heat radiating film is formed on the second surface of the semiconductor device with being spaced away from the first heat radiating film. | 2009-11-12 |
20090280605 | METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING STACKED TRANSISTORS - There is provided a method of forming a semiconductor device having stacked transistors. When farming a contact hole for connecting the stacked transistors to each other, ohmic layers on the bottom and the sidewall of the common contact hole are separately formed. As a result, the respective ohmic layers are optimally formed to meet requirements or conditions. Accordingly, the contact resistance of the common contact may be minimized so that it is possible to enhance the speed of the semiconductor device. | 2009-11-12 |
20090280606 | METHOD FOR FABRICATING PHOTO SENSOR - A method for fabricating a photo sensor on an amorphous silicon thin film transistor panel includes forming a photo sensor with a bottom electrode, a silicon-rich dielectric layer, and a top electrode, such that the light sensor has a high reliability. The fabrication method is compatible with the fabrication process of a thin film transistor. | 2009-11-12 |
20090280607 | METHODS OF FABRICATING A DEVICE STRUCTURE FOR USE AS A MEMORY CELL IN A NON-VOLATILE RANDOM ACCESS MEMORY - Methods for fabricating a device structure for use as a memory cell in a non-volatile random access memory. The method includes forming first and second semiconductor bodies on the insulating layer that have a separated, juxtaposed relationship, doping the first semiconductor body to form a source and a drain, and partially removing the second semiconductor body to define a floating gate electrode adjacent to the channel of the first semiconductor body. The method further includes forming a first dielectric layer between the channel of the first semiconductor body and the floating gate electrode, forming a second dielectric layer on a top surface of the floating gate electrode, and forming a control gate electrode on the second dielectric layer that cooperates with the floating gate electrode to control carrier flow in the channel in the first semiconductor body. | 2009-11-12 |
20090280608 | CMOS DEVICE WITH METAL AND SILICIDE GATE ELECTRODES AND A METHOD FOR MAKING IT - A semiconductor device and a method for forming it are described. The semoiconductor device comprises a metal NMOS gate electrode that is formed on a first part of a substrate, and a silicide PMOS gate electrode that is formed on a second part of the substrate. | 2009-11-12 |
20090280609 | Method of making silicon carbide semiconductor device - In a method of making a silicon carbide semiconductor device having a MOSFET, after a mask is placed on a surface of a first conductivity type drift layer of silicon carbide, ion implantation is performed by using the mask to form a lower layer of a deep layer extending in one direction. A first conductivity type current scattering layer having a higher concentration than the drift layer is formed on the surface of the drift layer. After another mask is placed on a surface of the current scattering layer, ion implantation is performed by using the other mask to form an upper layer of the deep layer at a position corresponding to the lower layer in such a manner that the lower layer and the upper layer are connected together. | 2009-11-12 |
20090280610 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device including a buried insulating film formed in a bottom part of a trench and a buried-type gate electrode formed in the trench, the method including selectively forming an insulating film in the bottom part of the trench, forming a resist having an opening in a part that corresponds to a region where a device isolation insulating film is formed on a surface of a semiconductor substrate after forming the insulating film, and oxidizing the surface of the semiconductor substrate in the opening to form the device isolation insulating film. | 2009-11-12 |
20090280611 | NON-VOLATILE MEMORY SEMICONDUCTOR DEVICE HAVING AN OXIDE-NITRIDE-OXIDE (ONO) TOP DIELECTRIC LAYER - A non-volatile memory (NVM) cell includes a silicon substrate having a main surface, a source region in a portion of the silicon substrate, a drain region in a portion of the silicon substrate, and a well region disposed in a portion of the silicon substrate between the source and drain regions. The cell includes a bottom oxide layer formed on the main surface of the substrate. The bottom oxide layer is disposed on a portion of the main surface proximate the well region. The cell includes a charge storage layer disposed above the bottom oxide layer, a dielectric tunneling layer disposed above the charge storage layer and a control gate formed above the dielectric tunneling layer. The dielectric tunneling layer includes a first oxide layer, a nitride layer and a second oxide layer. Erasing the NVM cell includes applying a positive gate voltage to inject holes from the gate. | 2009-11-12 |
20090280612 | Semiconductor device and production method thereof - A method of fabricating a semiconductor device is disclosed that is able to suppress a short channel effect and improve carrier mobility. In the method, trenches are formed in a silicon substrate corresponding to a source region and a drain region. When epitaxially growing p-type semiconductor mixed crystal layers to fill up the trenches, the surfaces of the trenches are demarcated by facets, and extended portions of the semiconductor mixed crystal layers are formed between bottom surfaces of second side wall insulating films and a surface of the silicon substrate, and extended portion are in contact with a source extension region and a drain extension region. | 2009-11-12 |
20090280613 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a first semiconductor pattern which is covered with a first insulating film over a first active region, forming a second semiconductor pattern over a second active region, forming a second insulating film over the first insulating film and the first and second semiconductor patterns, forming an opening whose depth reaches the first semiconductor pattern by etching the second insulating film and the first insulating film, forming sidewalls on side surfaces of the second semiconductor pattern by patterning the second insulating film, forming a metal film over the first and second semiconductor patterns respectively, and forming silicide layers by reacting the first and second semiconductor patterns with the metal film. | 2009-11-12 |
20090280614 | Method of making a P-type metal-oxide semiconductor transistor and method of making a complementary metal-oxide semiconductor transistor - A method is disclosed to make a strained-silicon PMOS or CMOS transistor, in which, a compressive stress film is formed by reacting a silane having at least one substituent selected from the group consisting of hydrocarbyl, hydrocarboxy, carbonyl, formyl, carboxylic group, ester group, and halo group and ammonia, or a conventional compressive stress film is implanted with fluorine atoms, oxygen atoms, or carbon atoms, so as to improve the properties of negative bias temperature instability (NBTI). | 2009-11-12 |
20090280615 | METHOD OF FORMING A CONDUCTIVE STRUCTURE IN A SEMICONDUCTOR DEVICEAND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of forming a conductive structure in a semiconductor device includes forming a conductive layer on a substrate, forming a conductive layer pattern on the substrate by patterning the conductive layer, forming an oxide layer on the substrate and a portion of the conductive layer, and forming a capping layer on the oxide layer and the conductive layer pattern. | 2009-11-12 |
20090280616 | INTEGRATED TRANSISTOR, PARTICULARLY FOR VOLTAGES AND METHOD FOR THE PRODUCTION THEREOF - Integrated transistor and method for the production is disclosed. An explanation is given of, inter alia, a transistor having an electrically insulating isolating trench extending from a main area in the direction of a connection region remote from the main area. Moreover, the transistor contains an auxiliary trench extending from the main area as far as the connection region remote from the main area. The transistor requires a small chip area and has outstanding electrical properties. | 2009-11-12 |
20090280617 | FABRICATING PROCESS FOR SUBSTRATE WITH EMBEDDED PASSIVE COMPONENT - A fabricating process for a substrate with an embedded passive component is provided. The fabricating process includes the following steps. First, a substrate including a top conductive layer, a bottom conductive layer, and at least a dielectric layer is provided. The top conductive layer and the bottom conductive layer are separately disposed on a top surface and a bottom surface of the dielectric layer. Next, a plurality of plating through holes is formed in the substrate. Then, the top and the bottom conductive layers are patterned to form a patterned top conductive layer and a patterned bottom conductive layer separately, and the dielectric layer is exposed in part. The patterned top conductive layer and the patterned bottom conductive layer have many traces and many trenches formed by the traces. Thereafter, the trenches are filled with a material, wherein the traces and the material are adapted for forming the passive component. | 2009-11-12 |
20090280618 | Method of Planarizing a Semiconductor Device - A process of forming a semiconductor process fabricated device which contains a trench, hole or gap filled with a conformally deposited material is disclosed. A sacrificial planarizing layer is formed on the fill material, and the device is planarized using a selective RIE process which etches the fill material faster than the sacrificial planarizing layer. An overetch step completes the planarization process. | 2009-11-12 |
20090280619 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE HAVING CONDUCTIVE LINER FOR RAD HARD TOTAL DOSE IMMUNITY - The invention relates to a method includes etching at least one shallow trench in at least an SIO layer; forming a dielectric liner at an interface of the SIO layer and the SIO layer; forming a metal or metal alloy layer in the shallow trench on the dielectric liner; and filling the shallow trench with oxide material over the metal or metal alloy. | 2009-11-12 |
20090280620 | Method for Producing Soi Wafer - The present invention is a method for producing an SOI wafer comprising at least a step of forming an ion-implanted damaged layer by ion-implanting a neutral element electrically inactive in silicon from one surface of the base wafer or the bond wafer, in which ion-implanting in the step of forming the ion-implanted damaged layer is performed at a dosage of 1×10 | 2009-11-12 |
20090280621 | Method Of Producing Bonded Wafer - In a method of producing a bonded wafer, a volume fraction of SiO | 2009-11-12 |
20090280622 | FABRICATION METHOD FOR DEVICE HAVING DIE ATTACH FILM ON THE BACK SIDE THEREOF - A device fabrication method for fabricating individual devices from a wafer, wherein the back side of each device is covered with an adhesive film for die bonding. The device fabrication method includes a wafer dividing step of dividing the wafer into the individual devices along a plurality of kerfs by using a dicing before grinding process, an adhesive film mounting step of mounting an adhesive film on the back side of the wafer after performing the wafer dividing step, and an adhesive film dividing step of applying a laser beam to the adhesive film along the kerfs after performing the adhesive film mounting step, thereby dividing the adhesive film along the kerfs. | 2009-11-12 |
20090280623 | Method Of Producing Semiconductor Wafer - A semiconductor wafer is produced by irradiating a laser beam to either face of a semiconductor wafer so as to fit a focusing position into a given depth position of the semiconductor wafer to generate a multiphoton absorption process only in a specific portion of the semiconductor wafer at the given depth position to thereby form a gettering sink. | 2009-11-12 |
20090280624 | Precursors for Formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or Copper Indium Gallium Diselenide Films - Liquid-based precursors for formation of Copper Selenide, Indium Selenide, Copper Indium Diselenide, and/or copper Indium Galium Diselenide include copper-organoselenides, particulate copper selenide suspensions, copper selenide ethylene diamine in liquid solvent, nanoparticulate indium selenide suspensions, and indium selenide ethylene diamine coordination compounds in solvent. These liquid-based precursors can be deposited in liquid form onto substrates and treated by rapid thermal processing to form crystalline copper selenide and indium selenide films. | 2009-11-12 |
20090280625 | METHOD FOR SEPARATING SEMICONDUCTOR LAYER FROM SUBSTRATE - A method for separating a semiconductor from a substrate is disclosed. The method comprises the following steps: forming a plurality of columns on a substrate; epitaxially growing a semiconductor on the plurality of columns; and injecting etching liquid into the void among the plurality of columns so as to separate the semiconductor from the substrate. The method of this invention can enhance the etching efficiency of separating the semiconductor from the substrate and reduce the fabrication cost because the etching area is increased due to the void among the plurality of columns. In addition, the method will not confine the material of the above-mentioned substrate. | 2009-11-12 |
20090280626 | FINFET STRUCTURE WITH MULTIPLY STRESSED GATE ELECTRODE - A semiconductor structure and its method of fabrication include a semiconductor fin located over a substrate. A gate electrode is located over the semiconductor fin. The gate electrode has a first stress in a first region located closer to the semiconductor fin and a second stress which is different than the first stress in a second region located further from the semiconductor fin. The semiconductor fin may also be aligned over a pedestal within the substrate. The semiconductor structure is annealed under desirable stress conditions to obtain an enhancement of semiconductor device performance. | 2009-11-12 |
20090280627 | METHOD OF FORMING STEPPED RECESSES FOR EMBEDDED STRAIN ELEMENTS IN A SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor transistor device is provided. The fabrication method begins by forming a gate structure overlying a layer of semiconductor material, such as silicon. Then, spacers are formed about the sidewalls of the gate structure. Next, ions of an amorphizing species are implanted into the semiconductor material at a tilted angle toward the gate structure. The gate structure and the spacers are used as an ion implantation mask during this step. The ions form amorphized regions in the semiconductor material. Thereafter, the amorphized regions are selectively removed, resulting in corresponding recesses in the semiconductor material. In addition, the recesses are filled with stress inducing semiconductor material, and fabrication of the semiconductor transistor device is completed. | 2009-11-12 |
20090280628 | PLASMA IMMERSION ION IMPLANTATION PROCESS WITH CHAMBER SEASONING AND SEASONING LAYER PLASMA DISCHARGING FOR WAFER DECHUCKING - In a plasma immersion ion implantation process, the thickness of a pre-implant chamber seasoning layer is increased (to permit implantation of a succession of wafers without replacing the seasoning layer) without loss of wafer clamping electrostatic force due to increased seasoning layer thickness. This is accomplished by first plasma-discharging residual electrostatic charge from the thick seasoning layer. The number of wafers which can be processed using the same seasoning layer is further increased by fractionally supplementing the seasoning layer after each wafer is processed, which may be followed by a brief plasma discharging of the supplemented seasoning before processing the next wafer. | 2009-11-12 |
20090280629 | INTEGRATED CIRCUIT SYSTEM EMPLOYING GRAIN SIZE ENLARGEMENT - An integrated circuit system that includes: providing a substrate including an active device with a gate top surface exposed; implanting a dopant within the gate to alter the grain size of the gate material; forming a dielectric layer over the active device and the substrate; and annealing the integrated circuit system to transfer the stress of the dielectric layer into the active device. | 2009-11-12 |
20090280630 | Method for making very low Vt metal-gate/high-k CMOSFETs using self-aligned low temperature shallow junctions - This invention proposes a method for making very low threshold voltage (V | 2009-11-12 |
20090280631 | Electroless Metal Deposition For Dual Work Function - The present invention, in one embodiment provides a method of forming a semiconducting device including providing a substrate including a semiconducting surface, the substrate comprising a first device region and a second device region; forming a high-k dielectric layer atop the semiconducting surface of the substrate; forming a block mask atop the second device region of the substrate, wherein the first device region of the substrate is exposed; forming a first metal layer atop the high-k dielectric layer present in the first device region of the substrate; removing the block mask to expose a portion of the high-k dielectric layer in the first device region of the substrate; forming a second metal layer atop the portion of the high-k dielectric layer in the second device region and atop the first metal in the first device region of the substrate; and forming gate structures in the first and second device regions of the substrate. | 2009-11-12 |
20090280632 | MOSFETS Having Stacked Metal Gate Electrodes and Method - MOSFETs having stacked metal gate electrodes and methods of making the same are provided. The MOSFET gate electrode includes a gate metal layer formed atop a high-k gate dielectric layer. The metal gate electrode is formed through a low oxygen content deposition process without charged-ion bombardment to the wafer substrate. Metal gate layer thus formed has low oxygen content and may prevent interfacial oxide layer regrowth. The process of forming the gate metal layer generally avoids plasma damage to the wafer substrate. | 2009-11-12 |
20090280633 | METHOD OF FORMING SELF-ALIGNED CONTACTS AND LOCAL INTERCONNECTS - A method for simultaneous formation of a self-aligned contact of a core region and a local interconnect of a peripheral region of an integrated circuit includes etching a cap dielectric layer to simultaneously form a hole in the core region and a trench in the peripheral region of the cap dielectric layer, etching a dielectric layer to simultaneously form a hole in the core region and a trench in the peripheral region of the dielectric layer of the dielectric layer, etching a liner layer simultaneously on a shoulder of sidewall spacers associated with the hole and with the trench of the dielectric layer without etching the liner layer at a bottom area of the hole and the trench, performing an oxygen flushing to remove polymer residues, and etching simultaneously through the liner layer that lines the bottom area of the hole and the trench. | 2009-11-12 |