44th week of 2013 patent applcation highlights part 16 |
Patent application number | Title | Published |
20130284991 | FLAME RETARDANT POLYCARBONATE COMPOSITIONS, METHODS OF MANUFACTURE, AND ARTICLES FORMED THEREFROM - A composition comprising: a first polycarbonate comprising a poly(siloxane-carbonate); a second polycarbonate different from the first polycarbonate; and optionally, a third polycarbonate different from the first and second polycarbonate; wherein the first polycarbonate is present in an amount effective to provide the siloxane units of in the first polycarbonate in an amount of at least 0.3 wt %, and the second polycarbonate is present in an amount effective to provide the bromine of the second polycarbonate in an amount of at least 7.8 wt %; and further wherein an article molded from the composition has an OSU integrated 2 minute heat release test value of less than 65 kW-min/m | 2013-10-31 |
20130284992 | OPENING ASSEMBLY FOR INTERGRATED CIRCUIT SOCKET - An opening assembly for opening an IC socket includes a supporting member and an opening member. The IC socket comprises a main body and two covers engaging with the main body. The supporting member resists against one of the covers by a first external force pushing the supporting member toward the main body. The opening member is slidably assembled to the supporting member. The supporting member is configured for pulling the other one of the covers away from the main body by a second external force opposite to the first external force. The opening member and the supporting member cooperatively open the other one of the covers. | 2013-10-31 |
20130284993 | LABOR-SAVING DEVICE FOR DETECTION OF NO-LOAD HAND HOIST MOTION - It is disclosed that a labor-saving device for detection of no-load hand hoist motion, comprising a base, a stand pole, and a controller, a first cantilever beam, a second cantilever beam, a third cantilever beam, and a fourth cantilever beam being sequentially disposed in single vertical plane from top to bottom of the stand pole, which is characterized in that a electric hoist being disposed below the first cantilever beam; a pair of first guide unit being respectively disposed at two opposite laterals of the second cantilever beam; a driving unit including a motor, a stand plate, and an actuator being coaxially disposed in series from internal to external, being disposed above the third cantilever beam; and a pair of second guide unit are respectively disposed at two opposite laterals of the fourth cantilever beam. The advantages of the labor-saving device for detection of no-load hand hoist motion of the invention features as following in that: 1) The hanging location of the hand hoist being set at the lifting hook of the electric hoist, which enabling vertically regulating the position of hook to facilitate arrangement of the hand hoist; 2) It is can be achieved that changing the active wheel with a chain wheel or frictional wheel in accordance with the requirement of the friction needed by the hand hoist chain; 3) The device being provided with simplified configuration and lower cost for mass manufacture. | 2013-10-31 |
20130284994 | Road Barrier And A Method For Manufacturing Thereof - A road barrier comprising a support ( | 2013-10-31 |
20130284995 | Fence Post Assembly - A fence post assembly comprises a pre-fabricated concrete footer, a cap plate attached to a surface end of said pre-fabricated concrete footer, a rigid support rod extending upwardly from said pre-fabricated concrete footer and through said cap plate, and a fence post having a blind hole through a bottom end thereof. The fence post being downwardly positioned over said rigid support rod with said rigid support rod disposed within said blind hole and said bottom end engaged with said cap plate. And, a plurality of fence post withdrawal preventing members that projecting from said rigid support rod and are engaged with said fence post so as to prevent withdrawing said rigid support rod from said blind hole. | 2013-10-31 |
20130284996 | Sport Wall and Sport Wall System - An anchoring panel for a sport wall system with a front side facing an interior of the sport wall system, a back side, a flange extending from and rigidly fixed to the back side, a top side, a bottom side, and a first and second end wall is provided. Each of the first and second end walls include interlocking elements for interlocking with a first or second end of another panel in the sport wall system, the interlocking elements comprising at least a male knob extending towards the bottom side of the anchoring panel and configured to be insertable into a panel recess of the another panel in the sport wall system. | 2013-10-31 |
20130284997 | Mounting for a Safety System - A mounting for a support post of a safety system has a cylindrical stem to be removably received in a cylindrical socket of an anchor device to be secured to a structure, and a connector enabling connection to the support post of the safety system. The connector is articulated with respect to the cylindrical stem to be adjustable over a range of attitude orientations with respect to the cylindrical stem and a securing device secures the connector at a specific attitude orientation with respect to the cylindrical stem. The mounting may be used in a safety guardrail system for working at height, with a vacuum anchor and a support post to which the guardrail is mounted. The support post is mounted to the vacuum anchor by the articulated mounting to enable the orientation angle of the support post to be adjusted with respect to the anchor device. | 2013-10-31 |
20130284998 | FORMING HEATERS FOR PHASE CHANGE MEMORIES - A heater for a phase change memory may be thrilled by depositing a first material into a trench such that the material is thicker on the side wall than on the bottom of the trench. In one embodiment, because the trench side walls are of a different material than the bottom, differential deposition occurs. Then a heater material is deposited thereover. The heater material may react with the first material at the bottom of the trench to make Ohmic contact with an underlying metal layer. As a result, a vertical heater may be formed which is capable of making a small area contact with an overlying chalcogenide material. | 2013-10-31 |
20130284999 | PHASE CHANGE MEMORY STRUCTURE COMPRISING PHASE CHANGE ALLOY CENTER-FILLED WITH DIELECTRIC MATERIAL - A phase change memory structure, including a substrate having a cavity extending from a surface of the substrate into an interior region thereof, wherein the cavity is bounded by side wall surface, wherein the cavity is coated on the side wall surface with a film of phase change memory material defining a core that is at least partially filled with dielectric material such as alumina. Such phase change memory structure can be fabricated in a substrate containing a cavity closed at one end thereof with a bottom electrode, by a method including: conformally coating sidewall surface of the cavity and surface of the bottom electrode closing the cavity, with a phase change memory material film, to form an open core volume bounded by the phase change memory material film; at least partially filling the open core volume with alumina or other dielectric material; and forming a top electrode at an upper portion of the cavity. | 2013-10-31 |
20130285000 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - According to one embodiment, the semiconductor device includes a substrate, and an interlayer insulating film that is provided with a plug hole, formed on the substrate. Additionally, the device includes a plug layer formed within the plug hole, a heater layer formed on the plug layer within the plug hole, and a phase change film formed on the heater layer within the plug hole. The device additionally includes a wiring layer formed on the phase change film and the interlayer insulating film. | 2013-10-31 |
20130285001 | METHODS FOR FORMING A NANOWIRE AND APPARATUS THEREOF - A system that incorporates teachings of the subject disclosure may include, for example, a method for depositing a first material that substantially covers a nanoheater, applying a signal to the nanoheater to remove a first portion of the first material covering the nanoheater to form a trench aligned with the nanoheater, depositing a second material in the trench, and removing a second portion of the first material and a portion of the second material to form a nanowire comprising a remaining portion of the second material covering the nanoheater along the trench. Additional embodiments are disclosed. | 2013-10-31 |
20130285002 | Phase Change Memory Cells And Methods Of Forming Phase Change Memory Cells - A phase change memory cell has first and second electrodes having phase change material there-between. The phase change memory cell is devoid of heater material as part of either of the first and second electrodes and being devoid of heater material between either of the first and second electrodes and the phase change material. A method of forming a memory cell having first and second electrodes having phase change material there-between includes lining elevationally inner sidewalls of an opening with conductive material to comprise the first electrode of the memory cell. Elevationally outer sidewalls of the opening are lined with dielectric material. Phase change material is formed in the opening laterally inward of and electrically coupled to the conductive material in the opening. Conductive second electrode material is formed that is electrically coupled to the phase change material. Other implementations are disclosed. | 2013-10-31 |
20130285003 | Phase Change Memory Cells And Methods Of Forming Phase Change Memory Cells - A phase change memory cell includes a first electrode having a cylindrical portion. A dielectric material having a cylindrical portion is longitudinally over the cylindrical portion of the first electrode. Heater material is radially inward of and electrically coupled to the cylindrical portion of the first electrode. Phase change material is over the heater material and a second electrode is electrically coupled to the phase change material. Other embodiments are disclosed, including methods of forming memory cells which include first and second electrodes having phase change material and heater material in electrical series there-between. | 2013-10-31 |
20130285004 | SOLID ELECTROLYTE MEMORY ELEMENTS WITH ELECTRODE INTERFACE FOR IMPROVED PERFORMANCE - A memory element can include a first electrode; a second electrode; and a memory material programmable between different resistance states, the memory material disposed between the first electrode and the second electrode and comprising a solid electrolyte with at least one modifier element formed therein; wherein the first electrode is an anode electrode that includes an anode element that is ion conductible in the solid electrolyte, the anode element being different than the modifier element. | 2013-10-31 |
20130285005 | VARIABLE RESISTIVE ELEMENT, METHOD FOR PRODUCING THE SAME, AND NONVOLATILE SEMICONDUCTOR MEMORY DEVICE INCLUDING THE VARIABLE RESISTIVE ELEMENT - A variable resistive element configured to reduce a forming voltage while reducing a variation in forming voltage among elements, a method for producing it, and a highly integrated nonvolatile semiconductor memory device provided with the variable resistive element are provided. The variable resistive element includes a resistance change layer (first metal oxide film) and a control layer (second metal oxide film) having contact with a first electrode sandwiched between the first electrode and a second electrode. The control layer includes a metal oxide film having a low work function (4.5 eV or less) and capable of extracting oxygen from the resistance change layer. The first electrode includes a metal having a low work function similar to the above metal, and a material having oxide formation free energy higher than that of an element included in the control layer, to prevent oxygen from being thermally diffused from the control layer. | 2013-10-31 |
20130285006 | VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A variable resistance memory device includes a selection transistor, which includes a first doped region and a second doped region, a vertical electrode coupled to the first doped region of the selection transistor, a bit line coupled to the second doped region of the selection transistor, a plurality of word lines stacked on the substrate along a sidewall of the vertical electrode, variable resistance patterns between the word lines and the vertical electrode, and an insulating isolation layer between the word lines. The variable resistance patterns are spaced apart from each other in a direction normal to a top surface of the substrate by the insulating isolation layer. | 2013-10-31 |
20130285007 | SILICON NANOCRYSTAL INKS, FILMS, AND METHODS - Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for example, to prepare semiconductor devices. | 2013-10-31 |
20130285008 | NANOWIRES, METHOD OF FABRICATION THE SAME AND USES THEREOF - A method of forming a nanowire structure is disclosed. The method comprises applying on a surface of carrier liquid a layer of a liquid composition which comprises a surfactant and a plurality of nanostructures each having a core and a shell, and heating at least one of the carrier liquid and the liquid composition to a temperature selected such that the nanostructures are segregated from the surfactant and assemble into a nanowire structure on the surface. | 2013-10-31 |
20130285009 | LATERAL FIELD EMISSION DEVICE - Described is a lateral field emission device emitting electrons in parallel with respect to a substrate. Electron emission materials having a predetermined thickness are arranged in a direction with respect to the substrate on a supporting portion. An anode is disposed on a side portion of the substrate, the anode corresponding to the electron emission materials. | 2013-10-31 |
20130285010 | STACKED LED DEVICE WITH POSTS IN ADHESIVE LAYER - A semiconductor light emitting device includes a substrate and a first epitaxial structure over the substrate. The first epitaxial structure includes a first doped layer, a first light emitting layer, and a second doped layer. The first doped layer includes a first dopant type and the second doped layer includes a second dopant type. A second epitaxial structure includes a third doped layer, a second light emitting layer, and a fourth doped layer. An adhesive layer is between the first epitaxial structure and the second epitaxial structure. One or more posts are located in the adhesive layer. | 2013-10-31 |
20130285011 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - According to one embodiment, a semiconductor light emitting device includes a first nitride semiconductor layer, a nitride semiconductor light emitting layer, a second nitride semiconductor layer, a p-side electrode, and an n-side electrode. The nitride semiconductor light emitting layer is provided on the p-side region of the second face of the first nitride semiconductor layer. The second nitride semiconductor layer is provided on the nitride semiconductor light emitting layer. The p-side electrode is provided on the second nitride semiconductor layer. The n-side electrode is provided on the n-side region of the second face of the first nitride semiconductor layer. The nitride semiconductor light emitting layer has a first concave-convex face in a side of the first nitride semiconductor layer, and a second concave-convex face in a side of the second nitride semiconductor layer. | 2013-10-31 |
20130285012 | LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - The present disclosure provides a light emitting diode and a method of manufacturing the same. The light emitting diode includes a graphene layer on a second conductive semiconductor layer and a plurality of metal nanoparticles formed on some region of the graphene layer, whereby adhesion between the second conductive semiconductor layer comprised of an inorganic material and the graphene layer is enhanced, thereby securing stability and reliability of the light emitting diode. In addition, the light emitting diode allows uniform spreading of electric current, thereby allowing stable emission of light through a surface area of the light emitting diode. The method of manufacturing a light emitting diode includes forming a graphene layer on a second conductive semiconductor layer, forming a mask film on the graphene layer, forming a metal layer within the patterns of the mask film, followed by removing the mask film; and heat treating the metal layer to form a plurality of metal nanoparticles, whereby the metal nanoparticles having a high index of refraction are formed on some region of the graphene layer and provide surface texturing effects, thereby improving light emission efficiency. | 2013-10-31 |
20130285013 | COMPOUND SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME - Provided are a compound semiconductor device and a manufacturing method thereof. A substrate and a graphene oxide layer are provided on the substrate. A first compound semiconductor layer is provided on the graphene oxide layer. The first compound semiconductor layer is selectively grown from the substrate exposed by the graphene oxide. | 2013-10-31 |
20130285014 | FORMATION OF A GRAPHENE LAYER ON A LARGE SUBSTRATE - A single crystalline silicon carbide layer can be grown on a single crystalline sapphire substrate. Subsequently, a graphene layer can be formed by conversion of a surface layer of the single crystalline silicon layer during an anneal at an elevated temperature in an ultrahigh vacuum environment. Alternately, a graphene layer can be deposited on an exposed surface of the single crystalline silicon carbide layer. A graphene layer can also be formed directly on a surface of a sapphire substrate or directly on a surface of a silicon carbide substrate. Still alternately, a graphene layer can be formed on a silicon carbide layer on a semiconductor substrate. The commercial availability of sapphire substrates and semiconductor substrates with a diameter of six inches or more allows formation of a graphene layer on a commercially scalable substrate for low cost manufacturing of devices employing a graphene layer. | 2013-10-31 |
20130285015 | PHOTOACTIVE DEVICES WITH IMPROVED DISTRIBUTION OF CHARGE CARRIERS, AND METHODS OF FORMING SAME - Radiation-emitting semiconductor devices include a first base region comprising an n-type III-V semiconductor material, a second base region comprising a p-type III-V semiconductor material, and a multi-quantum well structure disposed between the first base region and the second base region. The multi-quantum well structure includes at least three quantum well regions and at least two barrier regions. An electron hole energy barrier between a third of the quantum well regions and a second of the quantum well regions is less than an electron hole energy barrier between the second of the quantum well regions and a first of the quantum well regions. Methods of forming such devices include sequentially epitaxially depositing layers of such a multi-quantum well structure, and selecting a composition and configuration of the layers such that the electron hole energy barriers vary across the multi-quantum well structure. | 2013-10-31 |
20130285016 | EPITAXIAL STRUCTURE - An epitaxial structure is provided. The epitaxial structure includes a substrate, an epitaxial layer and a graphene layer. The epitaxial layer is located on the substrate. The graphene layer is located between the substrate and the epitaxial layer. The graphene layer can be a graphene film or graphene powder. The epitaxial structure can be made by: providing a substrate having an epitaxial growth surface, placing a graphene layer on the epitaxial growth surface, and epitaxially growing an epitaxial layer on the epitaxial growth surface. | 2013-10-31 |
20130285017 | STRAINED CHANNEL REGION TRANSISTORS EMPLOYING SOURCE AND DRAIN STRESSORS AND SYSTEMS INCLUDING THE SAME - Embodiments of the present invention provide transistor structures having strained channel regions. Strain is created through lattice mismatches in the source and drain regions relative to the channel region of the transistor. In embodiments of the invention, the transistor channel regions are comprised of germanium, silicon, a combination of germanium and silicon, or a combination of germanium, silicon, and tin and the source and drain regions are comprised of a doped III-V compound semiconductor material. Embodiments of the invention are useful in a variety of transistor structures, such as, for example, trigate, bigate, and single gate transistors and transistors having a channel region comprised of nanowires or nanoribbons. | 2013-10-31 |
20130285018 | PHOTODETECTOR USING GRAPHENE AND METHOD OF MANUFACTURING THE SAME - A photodetector using graphene includes: a gate electrode; a graphene channel layer which is opposite to and spaced apart from the gate electrode and does not have π-binding; a first electrode which contacts a first side of the graphene channel layer; and a second electrode which contacts a side of the graphene channel layer, where the first and second sides are opposite to each other, and where the graphene channel layer includes a first graphene layer and a first nanoparticle disposed on the first graphene layer. The first graphene layer may include a single graphene layer, or the first graphene layer may include a plurality of single graphene layers, which is sequentially stacked and does not have π-binding. | 2013-10-31 |
20130285019 | FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME - Provided is a field effect transistor including a drain region, a source region, and a channel region. The field effect transistor may further include a gate electrode on or surrounding at least a portion of the channel region, and a gate dielectric layer between the channel region and the gate electrode. A portion of the channel region adjacent the source region has a sectional area smaller than that of another portion of the channel region adjacent the drain region. | 2013-10-31 |
20130285020 | Compressive (PFET) and Tensile (NFET) Channel Strain in Nanowire FETs Fabricated With a Replacement Gate Process - A method of fabricating a FET device is provided which includes the following steps. Nanowires/pads are formed in a SOI layer over a BOX layer, wherein the nanowires are suspended over the BOX. A HSQ layer is deposited that surrounds the nanowires. A portion(s) of the HSQ layer that surround the nanowires are cross-linked, wherein the cross-linking causes the portion(s) of the HSQ layer to shrink thereby inducing strain in the nanowires. One or more gates are formed that retain the strain induced in the nanowires. A FET device is also provided wherein each of the nanowires has a first region(s) that is deformed such that a lattice constant in the first region(s) is less than a relaxed lattice constant of the nanowires and a second region(s) that is deformed such that a lattice constant in the second region(s) is greater than the relaxed lattice constant of the nanowires. | 2013-10-31 |
20130285021 | SOLUTION-PROCESSABLE ELECTRON-TRANSPORT MATERIALS AND RELATED ORGANIC OPTOELECTRONIC DEVICES - Charge transport compounds are provided. The compounds are useful in optoelectronic devices that include the compounds incorporated as a charge-transport layer. Methods for forming films of the compounds are also provided. Additionally, methods are provided for forming films of a charge-transport layer on an active layer of an optoelectronic device. The films are formed from a solution with solubility orthogonal to the solubility of the active layer, such that the active layer is not solvated during deposition of the charge-transport layer. | 2013-10-31 |
20130285022 | ORGANIC LIGHT-EMITTING DIODE AND DISPLAY DEVICE EMPLOYING THE SAME - An organic light-emitting diode and a display device employing the same are provided. The organic light-emitting diode includes a substrate; a cathode disposed on the substrate; an electron injection layer disposed on the cathode, wherein the electron injection layer includes a low work function metal layer and a metal complex layer having carrier injection capability; a light-emitting layer disposed on the electron injection layer; and an anode disposed on the light-emitting layer. | 2013-10-31 |
20130285023 | ORGANIC EL PANEL, DISPLAY DEVICE USING SAME, AND METHOD FOR PRODUCING ORGANIC EL PANEL - To increase light-extraction efficiency and simplify manufacturing process. An organic EL panel includes: first electrode reflecting incident light; second electrode transmitting incident light therethrough; organic light-emitting layer emitting light of corresponding color among RGB colors; first functional layer including charge injection/transport layer and at least one other layer, and disposed between the first electrode and the light-emitting layer; and second functional layer disposed between the second electrode and the light-emitting layer. The first functional layers of the RGB colors are equal in film thickness, the organic light-emitting layers of the RGB colors are equal in optical distance from the first electrode, the second functional layers of the RGB colors are equal in film thickness, the organic light-emitting layers of the RGB colors are equal in optical distance from the second electrode, and the organic light-emitting layers of the RGB colors differ in film thickness. | 2013-10-31 |
20130285024 | Electronic Device with Reduced Non-Device Edge Area - A first product as disclosed herein includes multiple devices, such as OLEDs, which are moveably connected to one another. The devices may be moveable from a first position in which they are stacked, closed, rolled, or the like, to a second expanded position in which they may be usable together as a single device. Active areas of the devices may be disposed within 3 mm from each adjacent or included active area when the device is in the first position, the second position, or both. Each active device may include a barrier film that covers at least a portion of the substrate and/or the active area of one or more of the devices. | 2013-10-31 |
20130285025 | COMPOUND HAVING TRIAZOLE RING STRUCTURE SUBSTITUTED WITH PYRIDYL GROUP AND ORGANIC ELECTROLUMINESCENT DEVICE - An organic compound having excellent electron transport property and hole blocking property as a material for a highly efficient organic EL device, and also provide a highly efficient organic EL device using the compound. This invention relates to a compound having a triazole ring structure to which a substituted pyridyl group is bonded, represented by the following general formula (1), and to an organic electroluminescence device comprising the compound: | 2013-10-31 |
20130285026 | BANK STRUCTURES FOR ORGANIC ELECTRONIC DEVICES - Embodiments in accordance with the present invention relate generally to the use of polycycloolefinic polymers as a structure defining material in organic electronic devices, and more specifically to separators, insulating structures or bank structures of such devices and to organic electronic devices comprising such structures, to processes for preparing such structures and to organic electronic devices encompassing such structures. | 2013-10-31 |
20130285027 | ORGANIC ELECTROLUMINESCENT DEVICE - The invention provides an OLED device with improved light out-coupling comprising an electroluminescent layer stack ( | 2013-10-31 |
20130285028 | ORGANIC ELECTROLUMINESCENCE GENERATING DEVICES - An electroluminescence generating device comprising a channel of organic semiconductor material, said channel being able to carry both types of charge carriers, said charge carriers being electrons and holes; an electron electrode, said electron electrode being in contact with said channel and positioned on top of a first side of said channel layer or within said channel layer, said electron electrode being able to inject electrons in said channel layer; a hole electrode, said hole electrode being spaced apart from said electron electrode, said hole channel and positioned on top of within said channel layer, said hole electrode being able to inject holes into said channel; a control electrode positioned on said first side or on a second side of said channel; whereby light emission of said electroluminescence generating device can be acquired by applying an electrical potential difference between said electron electrode and said hole electrode. | 2013-10-31 |
20130285029 | BENZOPHENANTHRENE DERIVATIVE AND ORGANIC ELECTROLUMINESCENCE DEVICE EMPLOYING THE SAME - A fused aromatic ring derivative shown by the following formula (1): | 2013-10-31 |
20130285030 | COMPOUND FOR ORGANIC OPTOELECTRONIC DEVICE, ORGANIC LIGHT EMITTING DIODE INCLUDING THE SAME, AND DISPLAY DEVICE INCLUDING THE ORGANIC LIGHT EMITTING DIODE - A compound for an organic optoelectronic device, an organic light emitting diode including the same, and a display device including the organic light emitting diode, the compound being represented by the following Chemical Formula 1: | 2013-10-31 |
20130285031 | LIGHT EMITTING DEVICE - A light emitting device having a plastic substrate is capable of preventing the substrate from deterioration with the transmission of oxygen or moisture content. The light emitting device has light emitting elements formed between a lamination layer and an inorganic compound layer that transmits visual light, where the lamination layer is constructed of one unit or two or more units, and each unit is a laminated structure of a metal layer and an organic compound layer. Alternatively, each unit is a laminated structure of a metal layer and an organic compound layer, wherein the inorganic compound layer is formed so as to cover the end face of the lamination layer. In the present invention, the lamination layer is formed on the primary surface of the plastic substrate, so that a flexible substrate structure can be obtained. | 2013-10-31 |
20130285032 | METHOD FOR PRODUCING ORGANIC LIGHT-EMITTING ELEMENT, ORGANIC DISPLAY PANEL, ORGANIC LIGHT-EMITTING DEVICE, METHOD FOR FORMING FUNCTIONAL LAYER, INK, SUBSTRATE, ORGANIC LIGHT-EMITTING ELEMENT, ORGANIC DISPLAY DEVICE, AND INKJET DEVICE - To provide a method of efficiently manufacturing an organic light-emitting element with excellent light-emitting characteristics by application, the method includes: preparing ink and filling an inkjet device having an ink ejection nozzle with ink; preparing a substrate having a base layer including a first electrode; and positioning the inkjet device above the substrate, and causing the inkjet device to eject a drop of the ink onto the base layer, wherein, in the preparation of the ink, a value Z denoting a reciprocal of the Ohnesorge number Oh determined by density ρ (g/m | 2013-10-31 |
20130285033 | ORGANIC EL DEVICE AND METHOD FOR PRODUCING ORGANIC EL DEVICE - The present invention aims at providing an organic EL device that emits light by an alternating current, has a simple structure and provides little increase of production processes, while downsizing an overall configuration and a simplifying a method for producing said organic EL device. The organic EL device includes a power feeding part and an organic-EL-element forming part. The organic-EL-element forming part includes a plurality of unit EL elements formed on a substrate. There is provided a plurality of series-connected parts each formed by a plurality of the unit EL elements that are electrically connected in series in a forward direction. A plurality of the series-connected parts are electrically connected to the power feeding part in parallel. The series-connected parts that are connected in parallel include a series-connected part that is connected to the power feeding part so as to have a reverse polarity. | 2013-10-31 |
20130285034 | ORGANIC EL DISPLAY PANEL - An organic EL display panel offering improved luminance includes: a substrate; pixel electrodes arranged in rows and columns; an insulating film coating the confronting edges of pixel electrodes adjacent in a column direction; banks each elongated in the column direction over a gap between pixel electrodes adjacent in the row direction; a hole transport layer in a gap between the banks; an organic light-emitting layer over the hole transport layer; and a common electrode over the organic light-emitting layer. Light is emitted from a first light-emitting portion and second light-emitting portions of the light-emitting layer. The first light-emitting portion is a portion above the pixel electrodes excluding where the insulating film is disposed. The second light-emitting portions are portions above both the pixel electrodes and the insulating film. | 2013-10-31 |
20130285035 | ORGANIC ELECTROLUMINESCENT ELEMENT, LIGHTING DEVICE, AND DISPLAY DEVICE - Provided is an organic electroluminescent element that maintains higher hole injection characteristics than conventional organic EL elements. This organic electroluminescent element has an organic compound layer sandwiched between a positive electrode and negative electrode. The organic compound layer contains at least a light emitting layer and charge generating layer and is characterized by (1) having a charge generating layer formed from at least one layer between the positive electrode and the light emitting layer and (2) containing an organic metal complex in at least one of the charge generating layer. | 2013-10-31 |
20130285036 | COMPOUNDS FOR ORGANIC ELECTROLUMINESCENT DEVICES - The present invention relates to aromatic nitrogen heterocycles, and to electronic devices, in particular organic electroluminescent devices, which comprise these aromatic nitrogen heterocycles, in particular in a hole-injection layer and/or in a hole-transport layer and/or in a hole-blocking layer and/or in an electron-transport layer and/or in an emitting layer. | 2013-10-31 |
20130285037 | ORGANIC EL LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME - Provided is an organic EL light emitting element that prevents variations in brightness caused by resistance in a transparent electrode layer without a separate auxiliary electrode being provided. This organic EL light emitting element has a transparent conductive layer, organic light emitting unit layer, and metal layer in that order on a transparent substrate. The metal layer is divided into negative electrode regions and auxiliary electrode regions that are electrically separated by a metal layer dividing channel. In the auxiliary electrode regions, the metal layer and transparent electrode layer are electrically connected via first type connecting channels, which are opening parts in the organic light emitting unit layer. The dividing channels and connecting channels are preferably formed by laser beam irradiation. | 2013-10-31 |
20130285038 | SUBSTRATE TO WHICH FILM IS FORMED AND ORGANIC EL DISPLAY DEVICE - On the TFT substrate ( | 2013-10-31 |
20130285039 | Organic Light-Emitting Device and Light Source Device Using the Same - In order to improve an external quantum efficiency of an organic light-emitting element, a first light extraction layer is formed over the surface of a second substrate on the side where the second substrate is present, a second light extraction layer is formed over the surface of the second substrate on the other side, the first and second light extraction layers contain fine particles and a binder, the average particle diameter of the fine particles contained in the first and second light extraction layers are 0.05 μm or more and 2 μm or less and 1 μm or more and 10 μm or less, respectively, and an optical length L | 2013-10-31 |
20130285040 | POSITION-SENSITIVE PHOTODETECTOR, METHOD FOR OBTAINING SAME AND METHOD FOR MEASURING THE RESPONSE FROM THE PHOTODETECTOR - The photodetector comprises a continuous active layer in which, in response to incident light a signal is generated that is proportional to the incident position of the light; it is characterized in that the active layer comprises a first ( | 2013-10-31 |
20130285041 | TRANSPARENT SURFACE ELECTRODE, ORGANIC ELECTRONIC ELEMENT, AND METHOD FOR MANUFACTURING TRANSPARENT SURFACE ELECTRODE - The purpose of the present invention is to provide a transparent surface electrode that maintains high transparency, suppresses the occurrence of leak currents, and has superior storage stability and resistance to damage by bending, a method for manufacturing the same, and an organic electronic element using the same. This transparent surface electrode has a metal pattern conductive layer that contains a metal on a transparent base material, and the transparent surface electrode also has a transparent polymer conductive layer, which contains that base material and a conductive polymer, on that metal pattern conductive layer. The transparent surface electrode is characterized by the surface roughness (Ra (surface roughness provided for by JIS, B601 (1994))) of the metal pattern conductive layer being 20 nm or less, and the polymer conductive layer containing a non-conductive polymer having a hydroxyl group. | 2013-10-31 |
20130285042 | ORGANIC ELECTROLUMINESCENCE DISPLAY PANEL AND ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE - The present invention provides an organic EL display panel and an organic EL display apparatus that can be driven at a low voltage and that exhibit excellent light-emitting efficiency. Sequentially fixated on a substrate are: a first electrode; auxiliary wiring; a hole injection layer; a functional layer; and a second electrode. The hole injection layer and the second electrode are both formed to be continuous above the first electrode and above the auxiliary wiring. The second electrode and the auxiliary wiring are electrically connected by the hole injection layer. The hole injection layer contains tungsten oxide and at least 2 nm thick so as to have, in an electronic state thereof, an occupied energy level in a range between 1.8 eV and 3.6 eV lower than a lowest energy level of a valence band in terms of a binding energy. | 2013-10-31 |
20130285043 | PHOTOELECTRIC CONVERSION ELEMENT - A photoelectric conversion element having high photovoltaic conversion efficiency is provided. | 2013-10-31 |
20130285044 | DISPLAY DEVICE, ARRAY SUBSTRATE, AND THIN FILM TRANSISTOR - Embodiments of the present invention relate to a display device, an array substrate, and a thin film transistor. The thin film transistor comprises a gate, an active layer and a gate insulating layer disposed between the gate and the active layer, the active layer is an oxide semiconductor, and the gate insulating layer comprises at least one layer of inorganic insulating thin film. With the gate insulating layer of the thin film transistor, it is possible that an adverse effect on the oxide semiconductor given by hydrogen-containing groups is effectively avoided, stability of the whole TFT device is enhanced to the most extent, and yield of final products is increased. | 2013-10-31 |
20130285045 | OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - A method for evaluating an oxide semiconductor film, a method for evaluating a transistor including an oxide semiconductor film, a transistor which includes an oxide semiconductor film and has favorable switching characteristics, and an oxide semiconductor film which is applicable to a transistor and enables the transistor to have favorable switching characteristics are provided. A PL spectrum of an oxide semiconductor film obtained by low-temperature PL spectroscopy has a first curve whose local maximum value is found in a range of 1.6 eV or more and 1.8 eV or less and a second curve whose local maximum value is found in a range of 1.7 eV or more and 2.4 eV or less. A value obtained by dividing the area of the second curve by the sum of the area of the first curve and the area of the second curve is 0.1 or more and less than 1. | 2013-10-31 |
20130285046 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A solid-state image sensing element including a transistor with stable electrical characteristics (e.g., significantly low off-state current) is provided. Two different element layers (an element layer including an oxide semiconductor layer and an element layer including a photodiode) are stacked over a semiconductor substrate provided with a driver circuit such as an amplifier circuit, so that the area occupied by a photodiode is secured. A transistor including an oxide semiconductor layer in a channel formation region is used as a transistor electrically connected to the photodiode, which leads to lower power consumption of a semiconductor device. | 2013-10-31 |
20130285047 | SEMICONDUCTOR DEVICE - A transistor including an oxide semiconductor film, in which the threshold voltage is prevented from being a negative value, is provided. A high quality semiconductor device having the transistor including an oxide semiconductor film is provided. A transistor includes an oxide semiconductor film having first to third regions. The top surface of the oxide semiconductor film in the first region is in contact with a source electrode or a drain electrode. The top surface of the oxide semiconductor film in the second region is in contact with a protective insulating film. The thickness of the second region is substantially uniform and smaller than the maximum thickness of the first region. The top surface and a side surface of the oxide semiconductor film in the third region are in contact with the protective insulating film. | 2013-10-31 |
20130285048 | ENHANCED ELECTRON MOBILITY AT THE INTERFACE BETWEEN GD2O3(100)/N-SI(100) - A multilayered structure is provided. The multilayered structure may include a silicon substrate and a film of gadolinium oxide disposed on the silicon substrate. The top surface of the silicon substrate may have silicon orientated in the 100 direction (Si(100)) and the gadolinium oxide disposed thereon may have an orientation in the 100 direction (Gd | 2013-10-31 |
20130285049 | STANDARD CELL AND SEMICONDUCTOR INTEGRATED CIRCUIT - A standard cell and a semiconductor integrated circuit which enable a reduction in layout area are provided. A power source line for supplying a high power source potential and a power source line for supplying a low power source potential are arranged in the same wiring layer, and a power source line for supplying a back-gate electrode with a voltage for controlling a threshold voltage is provided to overlap with one of the two power source lines. Further, standard cells each requiring a different number of power source lines are arranged in the same cell row, and a different number of power source lines are connected to each cell row, whereby the number of unnecessary power source lines is reduced so that layout area is reduced. | 2013-10-31 |
20130285050 | SEMICONDUCTOR DEVICE - A transistor that is to be provided has such a structure that a source electrode layer and a drain electrode layer between which a channel formation region is sandwiched has regions projecting in a channel length direction at lower end portions, and an insulating layer is provided, in addition to a gate insulating layer, between the source and drain electrode layers and a gate electrode layer. In the transistor, the width of the source and drain electrode layers is smaller than that of an oxide semiconductor layer in the channel width direction, so that an area where the gate electrode layer overlaps with the source and drain electrode layers can be made small. Further, the source and drain electrode layers have regions projecting in the channel length direction at lower end portions. | 2013-10-31 |
20130285051 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Miniaturized transistors having high and stable electric characteristics using high precision microfabrication are provided with high yield. Further, high performance, high reliability, and high productivity also of a semiconductor device including the transistor are achieved. A semiconductor device includes a vertical transistor in which a first electrode layer, a first oxide film containing indium, gallium, zinc, and nitrogen as main components, an oxide semiconductor film containing indium, gallium, and zinc as main components, a second oxide film containing indium, gallium, zinc, and nitrogen as main components, and a second electrode layer are stacked in this order, and a first gate insulating film and a first gate electrode layer are provided at one side of the columnar oxide semiconductor film and a second gate insulating film and a second gate electrode layer are provided at the other side of the columnar oxide semiconductor film. | 2013-10-31 |
20130285052 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. An oxide semiconductor layer including SiO | 2013-10-31 |
20130285053 | Sputtering Target for Oxide Thin Film and Process for Producing the Sputtering Target - Disclosed is a sputtering target that can suppress the occurrence of anomalous discharge in the formation of an oxide semiconductor film by sputtering method and can continuously and stably form a film. Also disclosed is an oxide for a sputtering target that has a rare earth oxide C-type crystal structure and has a surface free from white spots (a poor appearance such as concaves and convexes formed on the surface of the sputtering target). Further disclosed is an oxide sintered compact that has a bixbyite structure and contains indium oxide, gallium oxide, and zinc oxide. The composition amounts (atomic %) of indium (In), gallium (Ga), and zinc (Zn) fall within a composition range satisfying the following formula: | 2013-10-31 |
20130285054 | SEMICONDUCTOR DEVICE AND DISPLAY APPARATUS - A semiconductor device according to the present invention includes: a gate electrode ( | 2013-10-31 |
20130285055 | SEMICONDUCTOR DEVICE - A semiconductor device according to the present invention includes: a through via formed to penetrate a semiconductor substrate; first and second buffer circuits; a wiring forming layer formed in an upper layer of the semiconductor substrate; a connecting wiring portion formed in an upper portion of the through via assuming that a direction from the semiconductor substrate to the wiring forming layer is an upward direction, the connecting wiring portion being formed on a chip inner end face that faces the upper portion of the semiconductor substrate at an end face of the through via; a first path connecting the first buffer circuit and the through via; and a second path connecting the second buffer circuit and the through via. The first path and the second path are electrically connected through the connecting wiring portion. | 2013-10-31 |
20130285056 | SEMICONDUCTOR STRUCTURE WITH LOW-MELTING-TEMPERATURE CONDUCTIVE REGIONS, AND METHOD OF REPAIRING A SEMICONDUCTOR STRUCTURE - A semiconductor structure includes at least a semiconductor body, a delimiting structure delimiting a cup-shaped recess in the body and a conductive region in the recess. The conductive region is made of a low-melting-temperature material, having a melting temperature lower than that of the materials forming the delimiting structure. | 2013-10-31 |
20130285057 | SEMICONDUCTOR DEVICE - Increase in the chip size of a semiconductor device is suppressed. The semiconductor device includes: circuit vias provided in an interlayer insulating film between upper and lower wiring layers and coupling these wiring layers together; a planar ring-shaped protecting via that is provided in the interlayer insulating film under an electrode pad and one side of which is coupled with the electrode pad; a protecting wiring layer comprised of a wiring layer coupled only with the other side of the protecting via; and a semiconductor element provided over the principal surface of a semiconductor substrate under the protecting wiring layer. The lower part of the electrode pad whose surface is exposed is encircled with the protecting via and the protecting wiring layer. The width of the protecting via is equal to or larger than the width of each circuit via. | 2013-10-31 |
20130285058 | THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - The present invention discloses a thin-film transistor (TFT) array substrate and a manufacturing method thereof. Depositing a transparent conductive layer and a first metal layer in turn on a substrate patterned by a first multi-tone mask (MTM) to form a gate, a common electrode and a reflecting layer; depositing a gate insulation layer and a semiconductor layer patterned by a second MTM to remain the semiconductor layer on the gate; and depositing a second metal layer patterned by a third MTM to form a source and a drain. | 2013-10-31 |
20130285059 | MICROMACHINE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor element of the electric circuit includes a semiconductor layer over a gate electrode. The semiconductor layer of the semiconductor element is formed of a layer including polycrystalline silicon which is obtained by crystallizing amorphous silicon by heat treatment or laser irradiation, over a substrate. The obtained layer including polycrystalline silicon is also used for a structure layer such as a movable electrode of a structure body. Therefore, the structure body and the electric circuit for controlling the structure body can be formed over one substrate. As a result, a micromachine can be miniaturized. Further, assembly and packaging are unnecessary, so that manufacturing cost can be reduced. | 2013-10-31 |
20130285060 | UNIT FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE, AND METHOD FOR LIQUID PHASE EPITAXIAL GROWTH OF MONOCRYSTALLINE SILICON CARBIDE - The cost of liquid phase epitaxial growth of a monocrystalline silicon carbide is reduced. A feed material | 2013-10-31 |
20130285061 | SEMICONDUCTOR DEVICES AND METHODS OF PREPARATION - An organic film-forming polymer has a T | 2013-10-31 |
20130285062 | DISPLAY DEVICE AND METHOD OF FABRICATING THE DISPLAY DEVICE - In an EL element having an anode, an insulating film (bump) formed on the anode, and an EL film and a cathode formed on the insulating film, each of a bottom end portion and a top end portion of the insulating film is formed so as to have a curved surface. The taper angle of a central portion of the insulating film is set within the range from 35° to 70°, thereby preventing the gradient of the film forming surface on which the EL film and the cathode are to be formed from being abruptly changed. On the thus-formed film forming surface, the EL film and the cathode can be formed so as to be uniform in thickness, so that occurrence of discontinuity in each of EL film and the cathode is prevented. | 2013-10-31 |
20130285063 | THIN-FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - The present invention discloses a thin-film transistor (TFT) array substrate and a manufacturing method thereof. Depositing a transparent conductive layer and a first metal layer on a substrate, which is patterned by a multi-tone mask (MTM) to form a gate, a common electrode and a reflecting layer; depositing a gate insulation layer, which is patterned by a first mask to remain the gate insulation layer on the gate; depositing a semiconductor layer, which is patterned by a second mask to remain the semiconductor layer on the gate; and depositing a second metal layer, which is patterned by a third mask to form a source and a drain. | 2013-10-31 |
20130285064 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a phosphor layer, and a transparent film. The semiconductor layer has a first face, a second face opposite to the first face, and a light emitting layer. The p-side electrode is provided on the second face in an area including the light emitting layer. The n-side electrode is provided on the second face in an area not including the light emitting layer. The phosphor layer is provided on the first face. The phosphor layer includes a transparent resin and phosphor dispersed in the transparent resin. The transparent film is provided on the phosphor layer and has an adhesiveness lower than an adhesiveness of the transparent resin. | 2013-10-31 |
20130285065 | PVD BUFFER LAYERS FOR LED FABRICATION - Fabrication of gallium nitride-based light devices with physical vapor deposition (PVD)-formed aluminum nitride buffer layers is described. Process conditions for a PVD AlN buffer layer are also described. Substrate pretreatments for a PVD aluminum nitride buffer layer are also described. In an example, a method of fabricating a buffer layer above a substrate involves pre-treating a surface of a substrate. The method also involves, subsequently, reactive sputtering an aluminum nitride (AlN) layer on the surface of the substrate from an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-based gas or plasma. | 2013-10-31 |
20130285066 | METHOD OF FABRICATING GALLIUM NITRIDE SEMICONDUCTOR, METHOD OF FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE - Provided is a method of fabricating a gallium nitride semiconductor which enables activation of a p-type dopant with a heat treatment performed for a relatively short period of time. The fabricating method comprises the step of performing, in a vacuum, a heat treatment of a group III nitride semiconductor region, the group III nitride semiconductor region comprising a gallium nitride semiconductor, the gallium nitride semiconductor including a p-type dopant, the a group III nitride semiconductor region having a group III nitride semiconductor surface inclined with respect to a reference plane perpendicular to a reference axis, and the reference axis extending in a direction of a c-axis of the gallium nitride semiconductor. | 2013-10-31 |
20130285067 | METHOD FOR FORMING A BURIED METAL LAYER STRUCTURE - The invention relates to a method for fabricating a structure including a semiconductor material comprising: a) implanting one or more ion species to form a weakened region delimiting at least one seed layer in a substrate of semiconductor material, b) forming, before or after step a), at least one metallic layer on the substrate in semiconductor material, c) assembling the at least one metallic layer with a transfer substrate, then fracturing the implanted substrate at the weakened region, d) forming at least one layer in semiconductor material on the at least one seed layer, for example, by epitaxy. | 2013-10-31 |
20130285068 | SOLID STATE RADIATION DETECTOR WITH ENHANCED GAMMA RADIATION SENSITIVITY - A silicon carbide Schottky diode solid state radiation detector that has an electron donor layer such as platinum placed over and spaced above the Schottky contact to contribute high energy Compton and photoelectrical electrons from the platinum layer to the active region of the detector to enhance charged particle collection from incident gamma radiation. | 2013-10-31 |
20130285069 | SiC SEMICONDUCTOR ELEMENT - The invention provides an SiC semiconductor element having fewer interface defects at the interface between the SiC and the insulating film of the SiC semiconductor, as well as improved channel mobility. The semiconductor element is provided with at least an SiC semiconductor substrate and an insulating film in contact with the substrate, wherein the insulating film is formed on a specific crystal plane of the SiC semiconductor substrate, the specific crystal plane being a plane having an off-angle of 10-20° relative to the {11-20} plane toward the [000-1] direction or at an off-angle of 70-80° relative to the (000-1) plane toward the <11-20> direction. Through the use of a specific crystal plane unknown in the prior art, interface defects between the SiC semiconductor substrate and the insulating film can be reduced, and channel mobility of the semiconductor element can be improved. | 2013-10-31 |
20130285070 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a manufacturing method of a silicon carbide semiconductor device, a semiconductor substrate made of single crystal silicon carbide is prepared. At a portion of the semiconductor substrate where a first electrode is to be formed, a metal thin film made of electrode material including an impurity is formed. After the metal thin film is formed, the first electrode including a metal reaction layer in which the impurity is introduced is formed by irradiating the metal thin film with a laser light. | 2013-10-31 |
20130285071 | SEMICONDUCTOR DEVICE - On a front surface of a region where a junction termination extension structure of a semiconductor device using silicon carbide is formed, a structure having an n-type semiconductor region with a concentration relatively higher than a concentration of an n | 2013-10-31 |
20130285072 | WIDE BAND GAP SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - A wide band gap semiconductor device is disclosed. A first trench in a gate electrode part and second trench in a source electrode part (Schottky diode) are disposed close to each other, and the second trench is deeper than the first trench. A metal electrode is formed in the second trench to form a Schottky junction on a surface of an n-type drift layer in the bottom of the second trench. Further, a p+-type region is provided in part of the built-in Schottky diode part being in contact with the surface of the n-type drift layer, preferably in the bottom of the second trench. The result is a small wide band gap semiconductor device which is low in on-resistance and loss. Electric field concentration applied on a gate insulating film is relaxed to suppress lowering of withstand voltage and increase avalanche breakdown tolerance at turning-off time. | 2013-10-31 |
20130285073 | LED LIGHT DISPOSED ON A FLEXIBLE SUBSTRATE AND CONNECTED WITH A PRINTED 3D CONDUCTOR - An example includes subject matter (such as an apparatus) comprising a planar substrate including a first surface that is planar, at least one bare light emitting diode (“LED”) die coupled to the substrate and conductive ink electrically coupling the at least one bare LED die, wherein the conductive ink is disposed on the substrate and extends onto a surface of the LED that is out-of-plane from the first surface. | 2013-10-31 |
20130285074 | LUMINESCENT DEVICE AND MANUFACTURING METHOD FOR LUMINESCENT DEVICE AND SEMICONDUCTOR DEVICE - A luminescent device and a manufacturing method for the luminescent device and a semiconductor device which are free from occurrence of cracks in a compound semiconductor layer due to the internal stress in the compound semiconductor layer at the time of chemical lift-off. The luminescent device manufacturing method includes forming a device region on part of an epitaxial substrate through a lift-off layer; forming a sacrificing portion, being not removed in a chemical lift-off step, around device region on epitaxial substrate; covering epitaxial substrate and semiconductor layer and forming a covering layer such that level of surface thereof in the region away from device region is lower than luminescent layer surface; removing covering layer on semiconductor layer, and that on sacrificing portion surface; forming a reflection layer on covering layer surface and semiconductor layer surface; and forming a supporting substrate by providing plating on reflection layer. | 2013-10-31 |
20130285075 | LIGHT-EMITTING DEVICE - A light-emitting device includes a support substrate; a light-emitting stacked layer; transparent-conductive bonding layer; and a semiconductor contact layer. The light-emitting stacked layer includes a first semiconductor layer; an active layer; and a second semiconductor layer, wherein a polarity of the first semiconductor layer is different from that of the semiconductor layer. A first pad is formed on an exposed portion of the first semiconductor layer and a second pad is formed on the semiconductor contact layer. A polarity of the semiconductor contact layer is different from that of the second semiconductor layer. | 2013-10-31 |
20130285076 | LIGHT EMITTING DIODE DEVICE - A light emitting diode (LED) device includes at least one stacking LED unit. The stacking LED unit includes a plurality of epitaxial structures interleaved with tunnel junctions. For a given predetermined input power, the plurality of epitaxial structures may reduce an operating current density of the stacking LED unit as compared to an LED unit with a single epitaxial structure and the same horizontal size. The reduced operating current density approaches a quantum efficiency peak. Additionally, for a given predetermined input power, the stacking LED unit may operate in a current density interval corresponding to a quantum efficiency within 20% decrement of the quantum efficiency peak. | 2013-10-31 |
20130285077 | LIGHT EMITTING MODULE - According to one embodiment, a light emitting module includes a mounting substrate, a plurality of light emitting chips, a transparent layer, and a phosphor layer. The transparent layer is provided between the plurality of light emitting chips on the mounting face and on the light emitting chip. The transparent layer has a first transparent body and a scattering agent dispersed at least in the first transparent body between the plurality of light emitting chips. The scattering agent has a different refraction index from a refraction index of the first transparent body. The phosphor layer is provided on the transparent layer. The light emitting chip includes a semiconductor layer, a p-side electrode, an n-side electrode, a p-side external terminal, and an n-side external terminal. | 2013-10-31 |
20130285078 | SEMICONDUCTOR DEVICE HAVING DISPLAY DEVICE - A semiconductor integrated circuit having a high withstand voltage TFT and a TFT which is capable of operating at high speed in a circuit of thin film transistors (TFT) and methods for fabricating such circuit will be provided. A gate insulating film of the TFT required to operate at high speed (e.g., TFT used for a logic circuit) is relatively thinned less than a gate insulating film of the TFT which is required to have high withstand voltage (e.g., TFT used for switching high voltage signals). | 2013-10-31 |
20130285079 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A display device includes a laminated wiring formed of a low-resistance conductive film, and a low-reflection film mainly containing Al and functioning as an antireflective film which are sequentially arranged on a transparent substrate, a wiring terminal part provided at an end part of the laminated wiring and has the same laminated structure as that of the laminated wiring, and an insulating film for covering the laminated wiring and the wiring terminal part, in which the insulating film side serves as a display surface side, the wiring terminal part has a first opening part penetrating the insulating film and the low-reflection film and reaching the low-resistance conductive film, and an outer peripheral portion of the first opening part has a laminated structure of the low-resistance conductive film, the low-reflection film, and the insulating film, in at least one part. | 2013-10-31 |
20130285080 | SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, IMAGE DISPLAY DEVICE, AND ELECTRONIC APPARATUS - A semiconductor light emitting device including an active layer, a compound semiconductor layer on the active layer, a contact layer on the compound semiconductor layer, and an electrode on the contact layer, where the contact layer is substantially the same size as the electrode. | 2013-10-31 |
20130285081 | Optoelectronic Semiconductor Component - An optoelectronic semiconductor component, the includes at least two optoelectronic semiconductor chips , which are located on a common mounting surface. An optical element is arranged downstream of the semiconductor chips in a main emission direction and is spaced from the semiconductor chips. In a direction transverse to the main emission direction the optical element has a transmission gradient in a transitional region. The transitional region does not overlap the semiconductor chips, when viewed in plan view onto the mounting surface. | 2013-10-31 |
20130285082 | LED PACKAGE COMPRISING ENCAPSULATION - Light emitting elements ( | 2013-10-31 |
20130285083 | LIGHT EMITTING MODULE - A light emitting module including a substrate, a plurality of first light emitting diode (LED) chips and a plurality of second LED chips is provided. The substrate has a cross-shaped central region and a peripheral region surrounding the cross-shaped central region. The first LED chips are disposed on the substrate and at least located in the cross-shaped central region. The second LED chips are disposed on the substrate and at least located in the peripheral region. A size of each second LED chip is smaller than a size of each first LED chip. The number of the first LED chips located in the peripheral region is smaller than that in the cross-shaped central region. The number of the second LED chips located in the cross-shaped central region is smaller than that in the peripheral region. | 2013-10-31 |
20130285084 | Optoelectronic Semiconductor Component - An optoelectronic semiconductor component includes a carrier which has an upper side and a lower side opposite to the upper side. At least one radiation-emitting semiconductor device is disposed on the upper side and has a radiation emission surface, through which at least a portion of the electromagnetic radiation, which is generated during operation of the semiconductor device, leaves the semiconductor device. A radiation-absorbing layer is arranged to absorb ambient light, which impinges upon the component, such that an outer surface of the component facing away from the carrier appears black at least in places. | 2013-10-31 |
20130285085 | LIGHT-EMITTING DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME - Provided are a light-emitting device package and a method of manufacturing the same. The light-emitting device package may include a plurality of light-emitting chips on one substrate (board). The plurality of light-emitting chips may produce colors around a target color. The target color may be produced by combinations of the colors of light emitted from the plurality of light-emitting chips. The colors around the target color may have the same hue as the target color and have color temperatures different from that of the target color. The plurality of light-emitting chips may have color temperatures within about ±250K of that of the target color. | 2013-10-31 |
20130285086 | METHOD OF FORMING A MICRO LED DEVICE WITH SELF-ALIGNED METALLIZATION STACK - A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, a patterned sacrificial layer is utilized to form a self-aligned metallization stack and is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes. | 2013-10-31 |
20130285087 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light emitting device and manufacturing method thereof are disclosed. The light emitting device includes a substrate, a LED die, a first transparent layer, an optical wavelength conversion layer and a second transparent layer. The substrate has a die glue part. The LED die is disposed on the die glue part and has a base which is made of a transparent material. The first transparent layer is disposed on the side surface of the LED die. The optical wavelength conversion layer is evenly formed on the first transparent layer and the LED die. The second transparent layer is formed on the optical wavelength conversion layer. | 2013-10-31 |
20130285088 | OUT COUPLING LAYER CONTAINING PARTICLE POLYMER COMPOSITE - Light emitting devices comprising an optical layer comprising metal oxide particles having a polymer covalently bonded thereto and a light emitting layer, which is in optical communication with the optical layer are provided. Methods of fabricating a light emitting devices comprising: depositing an optical layer comprising metal oxide particles having a polymer covalently bonded thereto; and depositing a light emitting layer, which is in optical communication with the optical layer are also provided. | 2013-10-31 |
20130285089 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to an embodiment, a semiconductor light emitting device includes a semiconductor layer including a light emitting layer and a fluorescent substance excited by light emitted from the light emitting layer, a peak wavelength of a radiation spectrum of the light emitting layer at a room temperature being shorter than a peak wavelength of an excitation spectrum of the fluorescent substance. | 2013-10-31 |
20130285090 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a light emitting element, a phosphor layer, and a fluorescent reflection film. The phosphor layer has a transparent medium, a phosphor dispersed in the transparent medium, and a particle dispersed in the transparent medium. The phosphor is excited by the excitation light so as to emit a fluorescence. The particle is a magnitude of not more than 1/10 a wavelength of the excitation light. The particle has a different refractive index from a refractive index of the transparent medium. The fluorescent reflection film is provided between the light emitting element and the phosphor layer. The fluorescent reflection film has a higher reflectance with respect to a fluorescent wavelength of the phosphor, than a reflectance with respect to the wavelength of the excitation light. | 2013-10-31 |