| 41st week of 2011 patent applcation highlights part 12 |
| Patent application number | Title | Published |
|---|
| 20110248220 | Anthra[2,3-b]benzo[d]thiophene Derivatives and their Use as Organic Semiconductors - The invention relates to novel anthra[2,3-b]benzo[d]thiophene derivatives, methods of their preparation, their use as semiconductors in organic electronic (OE) devices, and to OE devices comprising these derivatives. | 2011-10-13 |
| 20110248221 | METAL FINE PARTICLE FOR CONDUCTIVE METAL PASTE, CONDUCTIVE METAL PASTE AND METAL FILM - A metal fine particle for a conductive metal paste includes a protective agent covering a surface of the metal fine particle. An amount of heat generated per unit mass (g) of the metal fine particle is not less than 500 J at a temperature of an external heat source temperature in a range of 200° C. to 300° C. when being calcined by the external heat source. The protective agent includes at least one selected from the group consisting of dipropylamine, dibutylamine, triethylamine, tripropylamine, tributylamine, butanethiol, pentanethiol, hexanethiol, heptanethiol, octanethiol, nonanethiol, decanethiol, undecanethiol and dodecanethiol. The content of the protective agent is in a range of 0.1 to 20% by mass with respect to the mass of the metal fine particle. | 2011-10-13 |
| 20110248222 | PROCESS FOR MANUFACTURING COLLOIDAL MATERIALS, COLLOIDAL MATERIALS AND THEIR USES - The present invention relates to a process for manufacturing a colloidal material, to colloidal materials obtainable by this process and to uses of said colloidal material for the manufacture of optic devices. The colloidal material obtainable by the process of the present invention is of formula A | 2011-10-13 |
| 20110248223 | Additives for Enhancing the Antistatic Properties of Conductive Polymer-Based Coatings - The present invention relates to a curable composition, providing, upon curing, a transparent, antistatic coating, comprising at least one conductive polymer, at least one epoxysilane binder, at least one solvent, and at least one compound of formula R | 2011-10-13 |
| 20110248224 | THERMOCHROMIC INDICATOR MATERIALS WITH CONTROLLED REVERSIBILITY - A thermal indicator material which comprises a plurality of polythiophenes having a second low temperature color and a high temperature color. The polythiophenes are structured and arranged to exhibit a color change from the second low temperature color to the high temperature color when the thermal indicator material is exposed to a temperature that meets or exceeds a predetermined temperature and to exhibit a color change from the high temperature color to a first low temperature color when the thermal indicator material is exposed to a decline in temperature from a temperature that meets or exceeds the predetermined temperature to a temperature of within the range of between about 5 to 20° C. below the pre-determined temperature that occurs in a time period of greater than 2.0 seconds. | 2011-10-13 |
| 20110248225 | POTASSIUM CESIUM TUNGSTEN BRONZE PARTICLES - Disclosed are potassium cesium tungsten bronze solid solution particles of the formula K | 2011-10-13 |
| 20110248226 | TRASH CAN LIFTING DEVICE WITH LEVER - The apparatus is to assist in the removal of trash receptacles and or bag liners from under counter single, double, or multiple slide-out trash can cabinets. By stepping on the lever located below the trash can, the trash-can will be raised approximately one inch which will allow a person to remove the plastic trash bag (bag liner) from the rim of the trash can. It will also allow easy removal of the trash receptacle itself once it is raised by allowing a person to grasp the rim of the trash can. The unit can be retrofitted onto existing pull-out trash can cabinets or mounted in new. | 2011-10-13 |
| 20110248227 | PROTECTION FOR A BUCKLING DETECTION HEAD - The buckling detection head is completely encapsulated in an encapsulating material, thus making it possible to protect the emitting and receiving surfaces of the cells for emitting and receiving light signals. This arrangement provides a slot in which the absolutely smooth cable passes, making it easier to clean the head and protect the cells. Other advantages of this arrangement are also described. | 2011-10-13 |
| 20110248228 | Winch and Trailer Hitch - A device that mounts into a vehicle's hitch receiver on a first end and providing a hitch ball on a second end also having a winch disposed between the first and second end. The winch is preferably removable from the balance of the device for ease of installation, transport and security. When in use, the winch may be locked in any of several predetermined angles relative to the hitch receiver so that the force of the winch may be directed in an advantageous direction. In a variation, a guide is provided so that the winch may be more easily used to guide a trailer onto the hitch ball. Generally the winch and hitch feature may be used independently of each other or used together. | 2011-10-13 |
| 20110248229 | FENCE POST AND FENCE FORMED THEREFROM - A fence post ( | 2011-10-13 |
| 20110248230 | FENCE COVERING SYSTEM - A fence covering system includes a frame configured and dimensioned to cover a portion of an existing fence. A panel is connected to the frame to provide a visual effect. A connector secures the frame on a portion of the fence, the connector providing an attachment position for the frame. | 2011-10-13 |
| 20110248231 | FENCING ASSEMBLY - A fencing assembly ( | 2011-10-13 |
| 20110248232 | UNIVERSAL BALUSTER CONNECTOR - In one embodiment, the invention is a universal baluster connector. In one embodiment, a connector for use in securing a baluster to a railing includes a body having a first end and a second end and a stem coupled to the first end of the body, the stem being expandable in a radial direction. Expansion of the stem allows the connector to be used to secure a baluster to a railing of substantially any thickness. | 2011-10-13 |
| 20110248233 | METHOD FOR FABRICATING A PHASE-CHANGE MEMORY CELL - A method for fabricating a phase-change memory cell is described. The method includes forming a dielectric layer (228) on a metal layer (226) above a substrate. A phase-change material layer (230) is formed on the dielectric layer. A contact region (232) is formed, within the dielectric layer, between the phase-change material layer and the metal layer by breaking-down a portion of the dielectric layer. | 2011-10-13 |
| 20110248234 | VERTICAL INTERCONNECT STRUCTURE, MEMORY DEVICE AND ASSOCIATED PRODUCTION METHOD - The present invention relates to a method for producing a vertical interconnect structure, a memory device and an associated production method, in which case, after the formation of a contact region in a carrier substrate a catalyst is produced on the contact region and a free-standing electrically conductive nanoelement is subsequently formed between the catalyst and the contact region and embedded in a dielectric layer. | 2011-10-13 |
| 20110248235 | VARIABLE RESISTANCE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME - A nonvolatile memory device includes a substrate and a first insulating layer on the substrate. The first insulating layer includes a first opening therein. A lower electrode is provided in the first opening and protrudes from a surface of the first insulating layer outside the first opening. An electrode passivation pattern is provided on a sidewall of the lower electrode that protrudes from the surface of the first insulating layer. A second insulating layer is provided on the first insulating layer and includes a second opening therein at least partially exposing the lower electrode. A variable resistance material layer extends into the second opening to contact the lower electrode. The electrode passivation layer electrically separates the sidewall of the lower electrode from the variable resistance material layer. The electrode passivation pattern is formed of a material having an etching selectivity to that of the second insulating layer. Related fabrication methods are also discussed. | 2011-10-13 |
| 20110248236 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a lower electrode, a variable resistance layer disposed over the lower electrode, the variable resistance layer is included a reactive metal layer being interposed between a plurality of oxide resistive layers and an upper electrode disposed over the variable resistance layer. | 2011-10-13 |
| 20110248237 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure layer, a conductive layer, a bonding layer, a support member, first and second pads, and first and second electrodes. The light emitting structure layer includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The conductive layer is disposed under the light emitting structure layer. The bonding layer is disposed under the conductive layer. The support member is disposed under the bonding layer. The first pad is disposed under the support member. The second pad is disposed under the support member at a distance from the first pad. The first electrode is connected between the first conductive type semiconductor layer and the first pad. The second electrode is connected between the bonding layer and the second pad. | 2011-10-13 |
| 20110248238 | LIGHT EMITTING DEVICE, AND LIGHTING APPARATUS - Disclosed herein is a light emitting device. The light emitting device includes a support member and a light emitting structure on the support member and including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer interposed between the first and second conductive semiconductor layers, and the active layer includes at least one quantum well layer and at least one barrier layer, at least one potential barrier layer located between the first conductive semiconductor layer and a first quantum well layer, closest to the first conductive semiconductor layer, out of the at least one quantum well layer, and an undoped barrier layer formed between the at least one potential barrier layer and the first quantum well layer and having a thickness different from that of the at least one barrier layer. Thereby, brightness of the light emitting device is improved through effective diffusion of current. | 2011-10-13 |
| 20110248239 | LIGHT EMITTING DEVICE - A light emitting device includes a substrate, and an LED chip mounted on the substrate. The chip includes: a body comprising a transparent conductor which comprises a base and sticks out of the base to taper off from the base; a light source comprising light emitting parts separately formed on the base; a first terminal formed on the base; and second terminals formed on the light emitting parts, respectively. A conductive pattern of the substrate includes: a first conductor electrically connected with the first terminal; and second conductors electrically connected with the second terminals, respectively. | 2011-10-13 |
| 20110248240 | GALLIUM NITRIDE BASED SEMICONDUCTOR LIGHT EMITTING DIODE - The present invention provides a gallium nitride based semiconductor light emitting diode having high transparency, and at the same time, capable of improving contact resistance between a p-type GaN layer and electrode. These objects can be accomplished by forming, on an upper part of a upper clad layer made of p-GaN, an ohmic contact forming layer using MIO, ZIO and CIO (In | 2011-10-13 |
| 20110248241 | NITRIDE SEMICONDUCTOR ELEMENT - A nitride semiconductor element includes: a strain suppression layer formed on a silicon substrate via an initial layer; and an operation layer formed on the strain suppression layer. The strain suppression layer includes a first spacer layer, a second spacer layer formed on and in contact with the first spacer layer, and a superlattice layer formed on and in contact with the second spacer layer. The first spacer layer is larger in lattice constant than the second spacer layer. The superlattice layer has first layers and second layers smaller in lattice constant than the first layers stacked alternately on top of one another. The average lattice constant of the superlattice layer is smaller than the lattice constant of the first spacer layer and larger than the lattice constant of the second spacer layer. | 2011-10-13 |
| 20110248242 | Practical electrically pumped photonic crystal nanocavity - Electrical pumping of photonic crystal (PC) nanocavities using a lateral p-i-n junction is described. Ion implantation doping can be used to form the junction, which under forward bias pumps a gallium arsenide photonic crystal nanocavity with indium arsenide quantum dots. Efficient cavity-coupled electroluminescence is demonstrated in a first experimental device. Electrically pumped lasing is demonstrated in a second experimental device. This approach provides several significant advantages. Ease of fabrication is improved because difficult timed etch steps are not required. Any kind of PC design can be employed. Current flow can be lithographically controlled to focus current flow to the active region of the device, thereby improving efficiency, reducing resistance, improving speed, and reducing threshold. Insulating substrates can be employed, which facilitates inclusion of these devices in photonic integrated circuits. | 2011-10-13 |
| 20110248243 | Carbon nanotube field effect transistor for printed flexible/rigid electronics - Methods and devices for manufacturing carbon nanotube based field effect transistors are disclosed including providing a substrate; printing a gate electrode layer onto the substrate and sintering and/or UV curing; printing a gate isolation layer onto the gate electrode and air drying and/or UV curing; printing one or more carbon nanotube channel layers onto the gate isolation layer, wherein each carbon nanotube channel layer is air dried prior to subsequent printings; and printing a source and drain electrode layer onto the one or more carbon nanotube channel layers and sintering and/or UV curing. Other embodiments are described and claimed. | 2011-10-13 |
| 20110248244 | INDEPENDENTLY CONTROLLED STACKED INVERTED ORGANIC LIGHT EMITTING DIODES AND A METHOD OF MANUFACTURING SAME - An OLED apparatus is provided that includes a first electrode having a first polarity, and an electrode arrangement spaced apart from the first electrode and having a second polarity. The OLED apparatus also includes a first organic emissive layer interposed between the first electrode and the electrode arrangement, and a second electrode spaced apart from the electrode arrangement in a direction opposite the first electrode. The second electrode has the first polarity. The OLED apparatus further includes a second organic emissive layer interposed between the second electrode and the electrode arrangement, and a drive circuit for providing a first energizing signal to the first electrode and the electrode arrangement and a second energizing signal to the second electrode and the electrode arrangement. A method for manufacturing an OLED array is provided. | 2011-10-13 |
| 20110248245 | PIXEL STRUCTURE OF ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF - A pixel structure of an organic light emitting diode display includes a first transistor and a second transistor. The first transistor includes a first drain electrode and a first source electrode. When a voltage difference is provided between the first drain electrode and the first source electrode, the first transistor has a first subthreshold slope (SS). The second transistor includes a second drain electrode and a second source electrode. When the voltage difference is provided between the second drain electrode and the second source electrode, the second transistor has a second SS, and the second SS is larger than the first SS. | 2011-10-13 |
| 20110248246 | AROMATIC AMINE DERIVATIVE, LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE - Provided is a novel aromatic amine derivative represented by General Formula (G1) below. (In the formula, A represents oxygen or sulfur, and R | 2011-10-13 |
| 20110248247 | ORGANIC EL DISPLAY UNIT, METHOD OF MANUFACTURING THE SAME, AND SOLUTION USED IN METHOD - An organic electroluminescence display unit includes: a lower electrode for each device; a first hole injection/transport layer provided on the lower electrode for each device; a second organic light emitting layer of the first color provided on the first hole injection/transport layer for the second organic electroluminescence device; a second hole injection/transport layer provided on the entire surfaces of the second organic light emitting layer and the first hole injection/transport layer for the first organic electroluminescence device, and being made of a low molecular material; a blue first organic light emitting layer provided on the entire surface of the second hole injection/transport layer; and an electron injection/transport layer having at least one of electron injection characteristics and electron transport characteristics, and an upper electrode that are provided in sequence on the entire surface of first organic light emitting layer. | 2011-10-13 |
| 20110248248 | ORGANIC SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An organic semiconductor device includes a gate electrode above a substrate. A gate insulation film is over the gate electrode. A first electrode is above the gate insulation film. A second electrode is above the gate insulation film. The second electrode is annular and surrounds the first electrode. An organic semiconductor layer is above the gate insulation film and over the first electrode. The second electrode surrounds the organic semiconductor layer and defines an outer periphery of the organic semiconductor layer. A conductive guiding member is above the gate insulation film. The conductive guiding member is annular and surrounds the second electrode. A protective film is above the gate insulation film and over the organic semiconductor layer and the second electrode. The conductive guiding member surrounds the protective film and defines an outer periphery of the protective film. | 2011-10-13 |
| 20110248249 | STACKED WHITE OLED HAVING SEPARATE RED, GREEN AND BLUE SUB-ELEMENTS - The present invention relates to efficient organic light emitting devices (OLEDs). More specifically, the present invention relates to white-emitting OLEDs, or WOLEDs. The devices of the present invention employ three emissive sub-elements, typically emitting red, green and blue, to sufficiently cover the visible spectrum. The sub-elements are separated by charge generating layers. | 2011-10-13 |
| 20110248250 | ORGANIC LIGHT EMITTING DEVICE AND MATERIALS FOR USE IN SAME - The present invention provides an OLED in which an organic thin film layer comprising a single layer or plural layers is provided between a cathode and an anode, where the organic thin film layer comprises at least one light emitting layer, and the at least one light emitting layer comprises (a) a host material represented by the following Formula (1): Ra—Ar | 2011-10-13 |
| 20110248251 | NITROGEN-CONTAINING HETEROCYCLIC DERIVATIVE AND ORGANIC ELECTROLUMINESCENCE ELEMENT USING NITROGEN-CONTAINING HETEROCYCLIC DERIVATIVE - Provided are a nitrogen-containing heterocyclic derivative having a specific structure containing a pyrazine skeleton in the center thereof, a hole injecting material or hole transporting material for an organic electroluminescence (EL) device, a light emitting material for an organic EL device, and an electron injecting material or electron transporting material for an organic EL device each containing the nitrogen-containing heterocyclic derivative, an organic EL device which includes one or a plurality of organic layers interposed between a cathode and an anode and in which at least one layer of the organic layers contains the nitrogen-containing heterocyclic derivative, and an apparatus including the organic EL device. The organic EL device shows high luminous brightness and high luminous efficiency even at a low voltage as compared with a conventional device. | 2011-10-13 |
| 20110248252 | ORGANIC EL ELEMENT AND METHOD FOR FABRICATING THE SAME - An organic EL display element ( | 2011-10-13 |
| 20110248253 | ORGANIC ELECTROLUMINESCENCE ELEMENT - The electroluminescence element comprises the light-reflective-electrode separated from the luminous point by distance “d” satisfying the following formula. | 2011-10-13 |
| 20110248254 | QUINOXALINE DERIVATIVE, AND LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE USING THE QUINOXALINE DERIVATIVE - It is an object to provide a novel bipolar organic compound. In particular, it is an object to provide a bipolar organic compound excellent in thermal stability. Further, it is another object to provide a bipolar organic compound which is electrochemically stable. A quinoxaline derivative represented by a general formula (1) is provided. Further, since the quinoxaline derivative represented by the general formula (1) is bipolar, the use of the quinoxaline derivative of the present invention allows fabrication of a light-emitting element and a light-emitting device with a low driving voltage and low power consumption. Furthermore, a light-emitting element with high luminous efficiency can be obtained. | 2011-10-13 |
| 20110248255 | ORGANIC THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A method of manufacturing a thin film transistor array panel is provided, the method includes forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a data line and a drain electrode on the gate insulating layer; forming an organic semiconductor layer on the data line, the drain electrode and an exposed portion of the gate insulating layer between the data line and the drain electrodel; forming a protective member fully covering the organic semiconductor layer; forming a passivation layer on the protective layer, the data line, and the drain electrode; forming a contact hole in the passivation layer to expose a portion of the drain electrode; and forming a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the contact hole. | 2011-10-13 |
| 20110248256 | TOP-EMITTING OLED DEVICE WITH LIGHTS-SCATTERING LAYER AND COLOR-CONVERSION - A top-emitting OLED device, comprising: one or more OLEDs formed on a substrate; a light-scattering layer formed over the one or more OLEDs; a transparent cover; one or more color filters formed on the transparent cover; a color-conversion material layer formed over the color filters, or formed over or integral with the light-scattering layer; wherein the substrate is aligned and affixed to the transparent cover so that the locations of the color filters and color conversion material correspond to the location of the OLEDs, and the color-conversion material layer, color filters, and the light-scattering layer are between the cover and substrate, and a low-index gap is formed between the light-scattering layer and the color filters, with no light-scattering layer being positioned between the color conversion material layer and the low-index gap, wherein the color-conversion material layer is formed integrally with the light-scattering layer. | 2011-10-13 |
| 20110248257 | COMPOUND FOR AN ORGANIC PHOTOELECTRIC DEVICE, ORGANIC PHOTOELECTRIC DEVICE, AND DISPLAY DEVICE INCLUDING THE SAME - A compound for an organic photoelectric device, an organic photoelectric device, and a display device including the same, the compound being represented by the following Chemical Formula 1: | 2011-10-13 |
| 20110248258 | ORGANIC-LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting device including: an anode; a hole charging layer (HCL) comprising an oxide semiconductor and formed on the anode; at least one organic layer formed on the HCL; and a cathode formed on the organic layer. The HCL may be an oxide semiconductor including indium (In), gallium (Ga), and zinc (Zn), or an oxide semiconductor including In, Zn, and hafnium (Hf). | 2011-10-13 |
| 20110248259 | Organic light emitting device and method of manufacturing the same - An organic light emitting device and a method of manufacturing the same, the device including a substrate; a thin film transistor on the substrate, the thin film transistor including source and drain electrodes, an oxide semiconductor layer, a gate electrode, and a gate insulating layer that insulates the gate electrode from the source and drain electrodes; a first insulating layer on the thin film transistor; a cathode on the first insulating layer, the cathode being connected to one of the source and drain electrodes of the thin film transistor; a first layer on the cathode, the first layer including a first material, the first material including at least one of metal, metal sulfide, metal oxide, and metal nitride; an organic layer on the first layer; and an anode on the organic layer. | 2011-10-13 |
| 20110248260 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device using an oxide semiconductor having stable electric characteristics and high reliability. A transistor including the oxide semiconductor film in which a top surface portion of the oxide semiconductor film is provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film and functioning as a channel protective film is provided. In addition, the oxide semiconductor film used for an active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) by heat treatment in which impurities such as hydrogen, moisture, a hydroxyl group, or a hydride are removed from the oxide semiconductor and oxygen which is a major constituent of the oxide semiconductor and is reduced concurrently with a step of removing impurities is supplied. | 2011-10-13 |
| 20110248261 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to manufacture a semiconductor device with high reliability by providing the semiconductor device including an oxide semiconductor with stable electric characteristics. In a transistor including an oxide semiconductor layer, a gallium oxide film is used for a gate insulating layer and made in contact with an oxide semiconductor layer. Further, gallium oxide films are provided so as to sandwich the oxide semiconductor layer, whereby reliability is increased. Furthermore, the gate insulating layer may have a stacked structure of a gallium oxide film and a hafnium oxide film. | 2011-10-13 |
| 20110248262 | DISPLAY DEVICE HAVING OXIDE THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF - A display device including an oxide thin film transistor (TFT) is disclosed. A nitride-based gate insulating layer of a gate pad area is etched when an oxide semiconductor layer of a pixel area is etched by using a half-tone mask, a metal layer is formed at a contact hole of the etched gate insulting layer, and then a passivation layer formed thereon is etched. Thus, an overhang of the passivation layer can be prevented from being generated when the gate insulating layer is etched, and accordingly, the fabrication process can be simplified. | 2011-10-13 |
| 20110248263 | INTEGRATED CIRCUITS HAVING BACKSIDE TEST STRUCTURES AND METHODS FOR THE FABRICATION THEREOF - Embodiments of a method for fabricating an integrated circuit having a backside test structure are provided. In one embodiment, the method includes the steps of providing a semiconductor substrate, forming at least one Through-Silicon-Via (TSV) through the semiconductor substrate, forming a backside probe pad over the backside of the semiconductor substrate and electrically coupled to the at least one TSV, and forming a frontside bondpad over the frontside of the semiconductor substrate. The frontside bondpad is electrically coupled to the backside probe pad by the at least one TSV. | 2011-10-13 |
| 20110248264 | Methods of Combinatorial Processing for Screening Multiple Samples on a Semiconductor Substrate - In embodiments of the current invention, methods of combinatorial processing and a test chip for use in these methods are described. These methods and test chips enable the efficient development of materials, processes, and process sequence integration schemes for semiconductor manufacturing processes. In general, the methods simplify the processing sequence of forming devices or partially formed devices on a test chip such that the devices can be tested immediately after formation. The immediate testing allows for the high throughput testing of varied materials, processes, or process sequences on the test chip. The test chip has multiple site isolated regions where each of the regions is varied from one another and the test chip is designed to enable high throughput testing of the different regions. | 2011-10-13 |
| 20110248265 | Backside texturing by cusps to improve IR response of silicon solar cells and photodetectors - The absorption coefficient of silicon for infrared light is very low and most solar cells absorb very little of the infrared light energy in sunlight. Very thick cells of crystalline silicon can be used to increase the absorption of infrared light energy but the cost of thick crystalline cells is prohibitive. The present invention relates to the use of less expensive microcrystalline silicon solar cells and the use of backside texturing with diffusive scattering to give a very large increase in the absorption of infrared light. Backside texturing comprises a plurality of cusped features providing diffusive scattering. Constructing the solar cell with a smooth front surface results in multiple internal reflections, light trapping, and a large enhancement of the absorption of infrared solar energy. | 2011-10-13 |
| 20110248266 | TRANSISTOR - An object is to provide a transistor having a novel electrode structure capable of substantially maintaining on-state current while parasitic capacitance generated in an overlap portion between a source electrode layer (a drain electrode layer) and a gate electrode layer is reduced. Parasitic capacitance is reduced by using a source electrode layer and a drain electrode in a comb shape in a transistor. Curved current flowing from side edges of electrode tooth portions can be generated by controlling the width of an end of a comb-shaped electrode layer or the interval between the electrode tooth portions. This curved current compensates for a decrease in linear current due to a comb electrode shape; thus, on-state current can be kept unchanged even when parasitic capacitance is reduced. | 2011-10-13 |
| 20110248267 | AIR-STABLE N-CHANNEL ORGANIC ELECTRONIC DEVICES - In connection with various example embodiments, an organic electronic device is provided with an organic material that is susceptible to decreased mobility due to the trapping of electron charge carriers in response to exposure to air. The organic material is doped with an n-type dopant that, when combined with the organic material, effects air stability for the doped organic material (e.g., exhibits a mobility that facilitates stable operation in air, such as may be similar to operation in inert environments). Other embodiments are directed to organic electronic devices n-doped and exhibiting such air stability. | 2011-10-13 |
| 20110248268 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added. | 2011-10-13 |
| 20110248269 | Organic light emitting diode display and method for manufacturing the same - An organic light emitting diode (OLED) display includes a substrate including a plurality of pixels defined thereon, a thin film transistor (TFT) positioned at each pixel, a negative electrode electrically connected to the TFT, an organic emission layer positioned on the negative electrode, and a positive electrode positioned on the organic emission layer, the positive electrode including an auxiliary layer positioned on the organic emission layer, a conductive layer positioned on the auxiliary layer, and an insulation layer positioned on the conductive layer. | 2011-10-13 |
| 20110248270 | THIN FILM TRANSISTOR, DISPLAY DEVICE, AND ELECTRONIC UNIT - A thin film transistor using oxide semiconductor for a channel, which may be controlled such that threshold voltage is positive and may be improved in reliability is provided. The thin film transistor includes a gate electrode, a pair of source/drain electrodes, an oxide semiconductor layer forming a channel and provided between the gate electrode and the pair of source/drain electrodes, a first insulating film as a gate insulating film provided on the oxide semiconductor layer on a side near the gate electrode, and a second insulating film provided on the oxide semiconductor layer on a side near the pair of source/drain electrodes. One or both of the first insulating film and the second insulating film includes an aluminum oxide having a film density of 2.70 g/cm | 2011-10-13 |
| 20110248271 | THIN FILM TRANSISTOR AND DISPLAY DEVICE HAVING THE SAME - The described technology relates generally to a thin film transistor comprising a gate electrode, a semiconductor layer and source/drain electrode, wherein the source/drain electrode is disposed in a range of a region in which the semiconductor layer is formed. Therefore, the present embodiments can provide a thin film transistor in which reliability is excellent because a change amount of threshold voltage is small. | 2011-10-13 |
| 20110248272 | ORGANIC EL DISPLAY DEVICE REFLECTIVE ANODE AND METHOD FOR MANUFACTURING THE SAME - Provided is a reflective anode for an organic EL display device having a reflective film made from an Al-based alloy which can realize a low contact resistance with an oxide conductive film and achieve an excellent reflectivity. Provided is also a method for manufacturing the reflective anode for an organic EL display device. The method includes: a step of forming an Al-based alloy film containing 0.1 to 2 atomic % of Ni or Co on a substrate; a step of subjecting the Al-based alloy film to a thermal treatment in a vacuum or an inactive gas atmosphere at the temperature of 150 degrees C. or above; and a step of forming an oxide conductive film so as to be in direct contact with the Al-based alloy film. | 2011-10-13 |
| 20110248273 | ACTIVE MATRIX SUBSTRATE, LIQUID CRYSTAL PANEL, LIQUID CRYSTAL DISPLAY UNIT, LIQUID CRYSTAL DISPLAY DEVICE, AND TELEVISION RECEIVER - In each pixel region, (i) a first pixel electrode ( | 2011-10-13 |
| 20110248274 | THIN FILM TRANSISTOR ARRAY PANEL FOR LIQUID CRYSTAL DISPLAY AND METHOD OF MANUFACTURING THE SAME - A method for manufacturing a thin film transistor array panel is disclosed. A gate wiring pattern is formed on an insulating substrate. A gate insulating layer is formed on the gate wiring pattern. A semiconductor pattern is formed on the gate insulating layer. A transparent conductive layer is formed on the gate insulating layer. The transparent conductive layer is patterned to form a pixel electrode. An opening is formed at a circumference of the pixel electrode. The opening minimizes misalignment during the manufacturing process and prevents shorts between a data line and the pixel electrode. | 2011-10-13 |
| 20110248275 | Thin Film Transistor And Display Device Including The Same - One object of the present invention is reduction of off current of a thin film transistor. Another object of the present invention is improvement of electric characteristics of the thin film transistor. Further, another object of the present invention is improvement of image quality of the display device including the thin film transistor. The thin film transistor includes a semiconductor film containing germanium at a concentration greater than or equal to 5 at. % and less than or equal to 100 at. % or a conductive film which is provided over a gate electrode with the gate insulating film interposed therebetween and which is provided in an inner region of the gate electrode so as not to overlap with an end portion of the gate electrode, a film covering at least a side surface of the semiconductor film containing germanium at a concentration greater than or equal to 5 at. % and less than or equal to 100 at. % or the conductive film, a pair of wirings formed over the film covering the side surface of the semiconductor film containing germanium at a concentration greater than or equal to 5 at. % and less than or equal to 100 at. % or the conductive film. | 2011-10-13 |
| 20110248276 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING ACTIVE LAYERS OF THE THIN FILM TRANSISTOR, AND DISPLAY DEVICE - A thin film transistor including a first polycrystalline semiconductor layer disposed on a substrate, a second polycrystalline semiconductor layer disposed on the first polycrystalline semiconductor layer, and metal catalysts configured to adjoin the first polycrystalline semiconductor layer and spaced apart from one another at specific intervals. | 2011-10-13 |
| 20110248277 | METHOD OF CRYSTALIZING AMORPHOUS SILICON LAYER, METHOD OF MANUFACTURING THIN FILM TRANSISTOR USING THE SAME, AND THIN FILM TRANSISTOR USING THE MANUFACTURING METHOD - A method of crystallizing an amorphous silicon layer, a method of manufacturing a thin film transistor using the same, and a thin film transistor using the manufacturing method, the crystallizing method including: forming an amorphous silicon layer; positioning crystallization catalyst particles on the amorphous silicon layer to be separated from each other; selectively removing the crystallization catalyst particles from a portion of the amorphous silicon layer; and crystallizing the amorphous silicon layer by a heat treatment. | 2011-10-13 |
| 20110248278 | SINGLE SCAN IRRADIATION FOR CRYSTALLIZATION OF THIN FILMS - A method of processing a polycrystalline film on a substrate includes generating laser pulses, directing the laser pulses through a mask to generate patterned laser beams, each having a length l′, a width w′, and a spacing between adjacent beams d′; irradiating a region of the film with the patterned beams, said beams having an intensity sufficient to melt and to induce crystallization of the irradiated portion of the film, wherein the film region is irradiated n times; and after irradiation of each film portion, translating the film and/or the mask, in the x- and y-directions. The distance of translation in the y-direction is about l′/n−δ, where δ is a value selected to overlap the beamlets from one irradiation step to the next. The distance of translation in the x-direction is selected such that the film is moved a distance of about λ′ after n irradiations, where λ′=w′+d′. | 2011-10-13 |
| 20110248279 | Thin film transitor, fabrication method of the same, and display device having the same - A thin film transistor, a method of manufacturing the same, and a display device including the same, the thin film transistor including a substrate; a polysilicon semiconductor layer on the substrate; and a metal pattern between the semiconductor layer and the substrate, the metal pattern being insulated from the semiconductor layer, wherein the polysilicon of the semiconductor layer includes a grain boundary parallel to a crystallization growing direction, and a surface roughness of the polysilicon semiconductor layer defined by a distance between a lowest peak and a highest peak in a surface thereof is less than about 15 nm. | 2011-10-13 |
| 20110248280 | TRANSISTOR HAVING THERMO ELECTRON COOLING - A semiconductor structure having a transistor and a thermo electronic structure. The transistor has a control electrode for controlling a flow of carriers through a semiconductor layer between a pair of electrodes. The thermo electronic structure has a first portion disposed on at least one of the pair of electrodes and a second portion disposed over a region of the semiconductor layer proximate the control electrode between the control electrode and said at least one of the pair of electrode. The thermo electronic structure extends from the first portion to the second portion for removing heat generated heat from said region in the semiconductor layer. | 2011-10-13 |
| 20110248281 | Nitride semiconductor substrate, production method therefor and nitride semiconductor device - A nitride semiconductor substrate includes two principal surfaces including an upper surface that is a growth face and a lower surface on its opposite side. An FWHM in a surface layer region at depths of from 0 to 250 nm from the upper surface is narrower than an FWHM in an inner region at depths exceeding 5 μm from the upper surface, where the FWHMs are obtained by X-ray rocking curve measurement using diffraction off a particular asymmetric plane inclined relative to the upper surface. | 2011-10-13 |
| 20110248282 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME - The invention provides a semiconductor structure and a manufacturing method of the same, and relates to a field of semiconductor manufacture. The semiconductor structure comprises: a silicon substrate; a large bandgap semiconductor layer formed on the silicon substrates; and a silicon layer formed on the large bandgap semiconductor layer. The method comprises: growing a large bandgap semiconductor layer on a silicon substrate; and growing a silicon layer on the large bandgap semiconductor layer. The embodiments of the present invention can be applied to manufacture of semiconductor devices. | 2011-10-13 |
| 20110248283 | VIA STRUCTURE OF A SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - Semiconductor devices, such as GaN HEMT and HFET devices, and methods of forming such devices, with a via that provides an electrical connection between a contact and a corresponding external contact pad. Embodiments include semiconductor devices with a via extending through a dielectric material to connect a gate to a corresponding external contact pad, and semiconductor devices with a via extending through a dielectric material to connect an Ohmic contact and a corresponding external contact pad. Embodiments also include semiconductor devices with a via connecting an external contact pad to a gate that is formed above a dielectric material. | 2011-10-13 |
| 20110248284 | SCHOTTKY DIODE WITH IMPROVED SURGE CAPABILITY - An SiC Schottky diode die or a Si Schottky diode die is mounted with its epitaxial anode surface connected to the best heat sink surface in the device package. This produces a substantial increase in the surge current capability of the device. | 2011-10-13 |
| 20110248285 | SEMICONDUCTOR DEVICES INCLUDING SCHOTTKY DIODES HAVING OVERLAPPING DOPED REGIONS AND METHODS OF FABRICATING SAME - A semiconductor device includes a semiconductor layer having a first conductivity type and having a surface in which an active region of the semiconductor device is defined, and a plurality of spaced apart doped regions within the active region. The plurality of doped regions have a second conductivity type that is opposite the first conductivity type and define a plurality of exposed portions of the semiconductor layer within the active region. The plurality of doped regions include a plurality of rows extending in a longitudinal direction. Each of the rows includes a plurality of longitudinally extending segments, and the longitudinally extending segments in a first row at least partially overlap the longitudinally extending segments in an adjacent row in a lateral direction that is perpendicular to the longitudinal direction. | 2011-10-13 |
| 20110248286 | SEMICONDUCTOR DEVICE - For suggesting a structure capable of achieving both a low start-up voltage and high breakdown voltage, a SiC vertical diode includes a cathode electrode, an n | 2011-10-13 |
| 20110248287 | HIGH REFLECTIVE SUBSTRATE OF LIGHT EMITTING DEVICES WITH IMPROVED LIGHT OUTPPUT - Apparatuses and methods for producing light emitting devices maximizing luminous flux output are disclosed. In one possible embodiment, a light emitting device comprises a substrate and a reflective layer at least partially covering the substrate. The reflective layer is non-yellowing, and may be substantially light transparent. One or more light emitting diode (LED) chips are disposed on the substrate. The light emitting device may emit white light. The reflective layer may comprise a silicone carrier with light reflective particles dispersed in the silicone carrier. A light diffusion lens may also be disposed on the substrate and surrounding the LED chips. Furthermore, one or more microspheres, light scattering particles, and/or phosphor particles may be dispersed in the lens. In one possible method for producing a light emitting device, a substrate is provided. One or more LED chips are coupled with the substrate, and a high reflective, non-yellowing coating is applied on at least a portion of the top surface of the substrate. The coating comprises a carrier with reflective particles dispersed throughout. | 2011-10-13 |
| 20110248288 | ELECTRO-LUMINESCENT DISPLAY PANEL - An electro-luminescent display panel including an active device array substrate, a pixel definition layer, electro-luminescent devices, an electrode layer and a protective layer is provided. The substrate includes pixel electrodes. The pixel definition layer on the substrate includes openings, each exposing the corresponding one of the pixel electrodes. The electro-luminescent devices are in the openings. Each electro-luminescent device layer is on the corresponding one of the pixel electrode. The electrode layer is on the pixel definition layer and the electro-luminescent devices. The protective layer including a buffer layer, a first and a second encapsulation films is on the electrode layer. The buffer layer covers the pixel definition layer and the electro-luminescent devices. The first encapsulation film partially covers the buffer layer. The first encapsulation film includes island patterns on the pixel electrodes. The second encapsulation film covers the buffer layer and the first encapsulation film. | 2011-10-13 |
| 20110248289 | LIGHT EMITTING DIODE PACKAGE, LIGHTING DEVICE AND LIGHT EMITTING DIODE PACKAGE SUBSTRATE - A light emitting diode (LED) package includes a LED package substrate, first LED chips and second LED chips. The LED package substrate includes a substrate, a first bonding pad, second bonding pads and a third bonding pad. The first, second and third bonding pads are disposed on the substrate. The second bonding pads are arranged in an array. The first and third bonding pads are located adjacent respectively to first and last column of the array. The first LED chips are die-bonded on the first bonding pad and wire-bonded respectively to the second bonding pads arranged in first column of the array. The second LED chips are die-bonded on the second bonding pads respectively. In each row except last column, each second LED chip is wire-bonded to the second bonding pad arranged in next column. The second LED chips located in last column are wire-bonded to the third bonding pad. | 2011-10-13 |
| 20110248290 | Methods and Apparatus for LED Lighting with Heat Spreading in Illumintion Gaps - Techniques for light emitting diode (LED) lighting with heat spreading in illumination gaps. Inexpensive structural aluminum may be suitably employed to form a passive heat spreading mount for plural LEDs whose illumination collectively combines to provide the light needed by a particular lighting fixture, such as a pendant chandelier, by way of example, by angling fins of the passive heat spreading mount to correspond to illumination gaps of the LEDs. | 2011-10-13 |
| 20110248291 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - An object of the invention is to provide a method for manufacturing semiconductor devices that are flexible in which elements fabricated using a comparatively low-temperature (less than 500° C.) process are separated from a substrate. After a molybdenum film is formed over a glass substrate, a molybdenum oxide film is formed over the molybdenum film, a nonmetal inorganic film and an organic compound film are stacked over the molybdenum oxide film, and elements fabricated by a comparatively low-temperature (less than 500° C.) process are formed using existing manufacturing equipment for large glass substrates, the elements are separated from the glass substrate. | 2011-10-13 |
| 20110248292 | LIGHTING DEVICE - A lighting device is provided. The lighting device comprises a first substrate and a plurality of second substrates. The plurality of second substrates are separately and electrically connected to the first substrate and comprise a light emitting device. | 2011-10-13 |
| 20110248293 | SURFACE MOUNT DEVICE THIN PACKAGE - The present invention is directed to LED packages and LED displays utilizing thin/low profile LED packages with improved structural integrity, emission characteristics, and customizable attributes. In some embodiments the improved structural integrity is provided by various features in the lead frame that cooperate with the casing for a stronger package. Moreover, in some embodiments the improved emission characteristics are provided by cavity features such as shape and depth, which provide for increased surface bonding area for multiple LED chips and increased viewing angle, respectively. Some embodiments also provide for gradated packages having customizable top portions for applications using smaller packages, with bottom portions comprising dimensions compatible with customary mechanical/electrical supports. | 2011-10-13 |
| 20110248294 | NOVEL OLED DISPLAY ARCHITECTURE - A device that may be used as a multi-color pixel is provided. The device has a first organic light emitting device, a second organic light emitting device, a third organic light emitting device, and a fourth organic light emitting device. The device may be a pixel of a display having four sub-pixels. The first device may emit red light, the second device may emit green light, the third device may emit light blue light and the fourth device may emit deep blue light. The device includes a first device plane and a second device plane. The first device plane comprises a plurality of the first organic light emitting device and a plurality of the second organic light emitting device. The second device plane comprises a plurality of at least one of the third organic light emitting device and the fourth organic light emitting device. The planes of the first and second device planes are parallel. The second device plane is transposed from the first device plane in a direction perpendicular to the planes of the first and second device planes. The first and second device planes are superposed. | 2011-10-13 |
| 20110248295 | Lamp - In at least one embodiment of the luminous means ( | 2011-10-13 |
| 20110248296 | LIGHT EMTTING DEVICE - Disclosed herein is a light emitting device. The light emitting device includes a light emitting diode disposed on a substrate to emit light of a first wavelength. A transparent molding part encloses the LED, a lower wavelength conversion material layer is disposed on the transparent molding part, and an upper wavelength conversion material layer is disposed on the lower wavelength conversion material layer. The lower wavelength conversion material layer contains a phosphor converting the light of the first wavelength into light of a second wavelength longer than the first wavelength, and the upper wavelength conversion material layer contains a phosphor converting the light of the first wavelength into light of a third wavelength, which is longer than the first wavelength but shorter than the second wavelength. Light produced via wavelength conversion is prevented from being lost by the phosphor. Light emitting devices including a multilayer reflection minor are also disclosed. | 2011-10-13 |
| 20110248297 | LIGHT-EMITTING APPARATUS AND PRODUCTION METHOD THEREOF - Provided is a light-emitting apparatus which can prevent a shadow mask from contacting a light-emitting medium to suppress damage of the medium, by using a conductive layer formed on a device isolation layer as a pressing member for the shadow mask, and can attain more secure conduction between a second electrode and an auxiliary electrode. A production method of the light-emitting apparatus includes forming first electrodes and auxiliary electrodes on a substrate; forming a device isolation layer between the first electrodes and forming an opening on each of the first electrodes and the auxiliary electrodes; forming a conductive layer on the device isolation layer so as to cover the openings above the auxiliary electrodes; bringing a shadow mask into contact with the conductive layer and forming a light-emitting medium in a thickness smaller than the thickness of the conductive layer; and forming a second electrode so as to cover the light-emitting medium, the device isolation layer, and the conductive layer. | 2011-10-13 |
| 20110248298 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light emitting device comprises a second electrode layer; a second conductivity-type semiconductor layer on the second electrode layer; a current blocking layer comprising an oxide of the second conductivity-type semiconductor layer; an active layer on the second conductivity-type semiconductor layer; a first conductivity-type semiconductor layer on the active layer; and a first electrode layer on the first conductivity-type semiconductor layer. | 2011-10-13 |
| 20110248299 | LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME - The present invention relates to a light emitting diode package and a method of fabricating the same capable of uniformly distributing a fluorescent substance in a molding member by including a light emitting diode chip on a package substrate and the molding member having a molding resin, a fluorescent substance and nano particles, which is arranged on the package substrate, with covering the light emitting diode chip. | 2011-10-13 |
| 20110248300 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - A light emitting device is provided. The light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first dielectric layer over a cavity where a part of the light emitting structure is removed, a second electrode layer over the first dielectric layer, a second dielectric layer over the light emitting structure above the cavity, and a first electrode over the second dielectric layer. | 2011-10-13 |
| 20110248301 | LIGHT EMITTING DEVICE, METHOD FOR FABRICATING THE LIGHT EMITTING DEVICE, AND LIGHT EMITTING DEVICE PACKAGE - Provided are a light emitting device, a method for fabricating the light emitting device, and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer, a conductive support member, and a protection member on the light emitting structure. The light emitting structure has a first width and a second width. A difference between the first width and the second width defines a stepped structure or an inclined structure. The protection member is disposed on the stepped or the inclined structure defined by the difference between the first and second widths of the light emitting structure. | 2011-10-13 |
| 20110248302 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - A light emitting device according to the embodiment includes a first electrode; a light emitting structure including a first semiconductor layer, an active layer and a second semiconductor layer on the first electrode; a second electrode on the light emitting structure; and a control switch installed on the light emitting structure to control the light emitting structure. | 2011-10-13 |
| 20110248303 | METHOD FOR PREPARING A B-SiAION PHOSPHOR - There is provided a method for preparing a β-SiAlON phosphor capable of be controlled to show characteristics such as high brightness and desired particle size distribution. The method for preparing a β-SiAlON phosphor represented by Formula: Si | 2011-10-13 |
| 20110248304 | LIGHT EMITTING DEVICE - The first wavelength converting member, the light emitting element, and the second wavelength converting member are disposed in this order toward the opening of the recess portion on the bottom surface of the housing member through a light transmissive supporting member, and spaced away from the side surface of the recess portion. The first wavelength converting member is a plate shape member made of a composite of an inorganic binder made of an inorganic material and a fluorescent material. A light scattering surface is formed on at least a portion of the side surface of the recess portion, which is irradiated with the light emitted from the side surfaces of the wavelength converting member in parallel with the principal surface of the first wavelength converting member. | 2011-10-13 |
| 20110248305 | METHOD FOR TRANSFERRING A UNIFORM PHOSPHOR LAYER ON AN ARTICLE AND LIGHT-EMITTING STRUCTURE FABRICATED BY THE METHOD - A method of transferring a uniform phosphor layer on an article and a light-emitting structure having a uniform phosphor layer. The method includes disposing a surface of the article in a proximity of a carrier having the uniform phosphor layer on a surface thereon, and causing the uniform phosphor layer to be secured to the surface of the article. Therefore, the uniform phosphor layer is secured to the articles according to a contour of the article. | 2011-10-13 |
| 20110248306 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE HAVING HIGH LIGHT EFFICIENCY AND METHOD OF MANUFACTURING THE SAME - Provided is a nitride semiconductor light emitting diode and a method of manufacturing the same. The method includes sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate, in-situ depositing a mask layer on a region of the surface of the second semiconductor layer, and selectively growing a third semiconductor layer formed in a textured structure on the second semiconductor layer by depositing a semiconductor material on the second semiconductor layer and the mask layer. | 2011-10-13 |
| 20110248307 | NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME - A nitride-based semiconductor light-emitting device | 2011-10-13 |
| 20110248308 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 2011-10-13 |
| 20110248309 | ORGANIC-LIGHT-EMITTING-DIODE FLAT-PANEL LIGHT-SOURCE APPARATUS AND METHOD OF MANUFACTURING THE SAME - Provided are an organic-light-emitting-diode (OLED) flat-panel light-source apparatus and a method of manufacturing the same. The device includes an anode and a cathode, to which externally applied power is supplied, disposed on a substrate, an organic emission layer (EML) interposed between the anode and the cathode and configured to emit light due to power supplied through the anode and the cathode, and a subsidiary electrode layer including a plurality of subsidiary electrodes bonded to the anode or the cathode and configured to supply power to the anode or the cathode or electrically insulated from the anode or the cathode and configured to supply power to other emission regions. | 2011-10-13 |
| 20110248310 | CHIP PACKAGE AND METHOD FOR FORMING THE SAME - An embodiment of the invention provides a chip package which includes a substrate having an upper surface and a lower surface and having at least a side surface, and at least a trench extending from the upper surface towards the lower surface and extending from the side surface towards an inner portion of the substrate, wherein a width of the trench near the upper surface is not equal to a width of the trench near the lower surface, and at least an insulating layer located on a sidewall of the trench, and at least a conducting pattern located on the insulating layer, wherein the side surface is separated from the conducting pattern in the trench by a predetermined distance such that a portion of the insulating layer is exposed, and at least a conducting region electrically connected to the conducting pattern. | 2011-10-13 |
| 20110248311 | LIGHT EMITTING DEVICE PACKAGE - Disclosed is a light emitting device package. The light emitting device package includes a semiconductor substrate comprising a first surface at a first depth from an upper surface of the semiconductor substrate and a second surface at a second depth from the first surface; and a light emitting part on the second surface of the semiconductor substrate. | 2011-10-13 |
| 20110248312 | SILICONE RESIN SHEET - The present invention relates to a silicone resin sheet obtained by semi-curing a composition for a silicone resin, the composition including: (1) an organopolysiloxane having at least two alkenylsilyl groups in one molecule thereof; (2) an organopolysiloxane having at least two hydrosilyl groups in one molecule thereof; (3) a hydrosilylation catalyst; and (4) a curing retardant. | 2011-10-13 |
| 20110248313 | Display Device and Method for Manufacturing the Same - An object of the present invention is to provide such a sealing structure that a material to be a deterioration factor such as water or oxygen is prevented from entering from external and sufficient reliability is obtained in a display using an organic or inorganic electroluminescent element. In view of the above object, focusing on permeability of an interlayer insulating film, deterioration of an electroluminescent element is suppressed and sufficient reliability is obtained by preventing water entry from an interlayer insulating film according to the present invention. | 2011-10-13 |
| 20110248314 | SILANOL CONDENSATION CATALYST, HEAT-CURABLE SILICONE RESIN COMPOSITION FOR SEALING PHOTOSEMICONDUCTORS AND SEALED PHOTOSEMICONDUCTOR USING SAME - A silanol condensation catalyst including at least the zirconium metal salt expressed by Formula (I) below (wherein n is an integer from 1 to 3; each R | 2011-10-13 |
| 20110248315 | STRUCTURED PILLAR ELECTRODES - An electrode comprising a plurality of structured pillars dispersed across a base contact and its method of manufacture are described. In one embodiment the structured pillars are columnar structures having a circular cross-section and are dispersed across the base surface as a uniformly spaced two-dimensional array. The height, diameter, and separation of the structured pillars are preferably on the nanometer scale and, hence, electrodes comprising the pillars are identified as nanostructured pillar electrodes. The nanostructured pillars may be formed, for example, by deposition into or etching through a surface template using standard lithography processes. Structured pillar electrodes offer a number of advantages when incorporated into optoelectronic devices such as photovoltaic cells. These include improved charge collection efficiency via a reduction in the carrier transport distance and an increase in electrode-photoactive layer interface surface area. These improvements contribute to an increase in the power conversion efficiency of photovoltaic devices. | 2011-10-13 |
| 20110248316 | INFRARED DETECTOR WITH EXTENDED SPECTRAL RESPONSE IN THE VISIBLE FIELD - A semiconductor-based SWIR infrared detector sensitive to wavelengths shorter than about 2.5 microns comprises a stack of semiconductor layers based on III-V materials forming a PIN photodiode. The stack includes a naked electrical contact, called a lower electrical contact, serving as an optical window; and a detection layer sensitive to said wavelengths. The lower contact comprises at least one layer of indirect-bandgap III-V material(s) doped n-type, pseudomorphic or lattice matched with a substrate intended to serve as a temporary substrate possibly being made of a III-V material such as InP or GaAs or of silicon or germanium. | 2011-10-13 |
| 20110248317 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes lateral and upper hydrogen blocking patterns disposed to prevent hydrogen from diffusing into the cell array region. Accordingly, hydrogen is effectively prevented from being trapped in a tunnel dielectric, thereby improving the reliability of the semiconductor device. In the method, when a cell array contact plug is formed, a lateral hydrogen blocking pattern and an upper hydrogen blocking pattern are formed at the same time. Thus, an additional process for forming a hydrogen blocking pattern is unnecessary, thereby simplifying a process. | 2011-10-13 |
| 20110248318 | METHOD AND APPARATUS FOR CONFIGURABLE SYSTEMS - The present invention relates to a flexible analog/digital configuration, preferably on a chip, that can be used for receiving various inputs, processing those inputs, and displaying/communicating the results and/or providing a response thereto. More particularly, the present invention can measure multiple parameters and, when properly programmed, can easily organize the data from multiple sensors or other analog or digital sources. It can present or display different, or similar, pages for setting up each measurement (or each measured parameter) (e.g., by sensor, class of sensors, etc.) to enable an easy to use approach for individuals without needing to know the specifics as to many parameters. This user-friendly approach can be performed using a configurable chip module system. A configurable chip module system can include analog elements, digital elements, and connection elements between the analog and digital elements, where some of the analog elements and/or digital elements receive inputs from one or more sources and where some of the analog elements and/or digital elements generate output signals for generating control signals and/or outputs that present measurements to output receiving elements. The system includes a configuration mechanism that automatically configures the connection elements in response to receiving selections entered on a user interface, where the user interface allows a user to input commands to modify the structure of the chip module system. | 2011-10-13 |
| 20110248319 | METHODS AND APPARATUS FOR MEASURING ANALYTES USING LARGE SCALE FET ARRAYS - Methods and apparatus relating to very large scale FET arrays for analyte measurements. ChemFET (e.g., ISFET) arrays may be fabricated using conventional CMOS processing techniques based on improved FET pixel and array designs that increase measurement sensitivity and accuracy, and at the same time facilitate significantly small pixel sizes and dense arrays. Improved array control techniques provide for rapid data acquisition from large and dense arrays. Such arrays may be employed to detect a presence and/or concentration changes of various analyte types in a wide variety of chemical and/or biological processes. In one example, chemFET arrays facilitate DNA sequencing techniques based on monitoring changes in hydrogen ion concentration (pH), changes in other analyte concentration, and/or binding events associated with chemical processes relating to DNA synthesis. | 2011-10-13 |
