41st week of 2012 patent applcation highlights part 11 |
Patent application number | Title | Published |
20120256095 | RADIOGRAPHIC DEVICE AND MANUFACTURING METHOD THEREOF - In a radiation detector, a scintillator converts radiations penetrating through a sensor panel to light, and the light is detected by a photosensor in the sensor panel. A reflector layer including a specular reflection and retro-reflection layers is provided on the opposite side of the scintillator to the sensor panel. The specular reflection layer specularly reflects short-wavelength components of the light from the scintillator, and lets long-wavelength components of the light pass through it. The photosensor can detect the short-wavelength components efficiently at positions close to their origins because they are guided along columnar crystals of the scintillator. Since long-wavelength components are less refrangible and tend to deviate from their origins, causing crosstalk, the retro-reflection layer retroreflects the long-wavelength components toward the sensor panel, so that the long-wavelength components also reach the sensor panel at positions close to their origins. | 2012-10-11 |
20120256096 | METHOD AND DEVICE FOR MONITORING MOVING OBJECTS - A method and a device for monitoring objects moving along a trajectory. The objects include a section that is transparent or translucent. The objects subsequently cross a light beam at the section. The presence or absence of an object is determined during a transitional time period during which substantially no light or light within a wavelength range substantially untransmittable through the section is detected. A monitoring device generates an output signal based on the light detection indicating the presence or absence of an object. | 2012-10-11 |
20120256097 | INDIRECTLY HEATED CATHODE CARTRIDGE DESIGN - An apparatus and method for producing electrons in a plasma flood gun is disclosed. The apparatus includes an indirectly heated cathode (IHC) which is contained within a pre-fabricated cartridge. This cartridge can be readily replaced in a plasma flood gun. In addition, the use of an IHC reduces the amount of contaminants that are injected into the workpiece or wafer. | 2012-10-11 |
20120256098 | Ion Beam System and Method of Operating Ion Beam System - An ion beam system comprises a voltage supply system | 2012-10-11 |
20120256099 | MOBILE X-RAY IMAGING SYSTEM - A mobile diagnostic imaging system includes a battery system and charging system. The battery system is located in the rotating portion of the imaging system, and includes one or more battery packs, comprising electrochemical cells. Each battery pack includes a control circuit that controls the state of charge of each of the electrochemical cells, and implements a control scheme that causes the electrochemical cells to have a similar charge state. The battery system communicates with a charging system on the non-rotating portion to terminate charge when one or more of the electrochemical cells reach a full state of charge. The imaging system also includes a docking system that electrically connects the charging system to the battery system during charging and temporarily electrically disconnects the rotating and non-rotating portions during imaging, a drive mechanism for rotating the rotating portion relative to the non-rotating portion. | 2012-10-11 |
20120256100 | Device for Reading Storage Films - In a reading device for reading storage films, a reading light beam rotating about an axis of rotation is directed onto the storage film through a reading opening of a film support. Fluorescent light returning from the storage film falls through the reading opening into a photodetector. Misreadings produced by reflected secondary reading light are reduced by the provision of a filter at the reading opening, which filter allows at least some fluorescent light to pass and attenuates reading light reflected from the storage film. | 2012-10-11 |
20120256101 | SUPER-RESOLUTION MICROSCOPY SYSTEM USING SPECKLE ILLUMINATION AND ARRAY SIGNAL PROCESSING - A nano-scale resolution fluorescence microscopy system and a method of obtaining an image using the nano-scale resolution microscopy system, and more particularly, a method and a microscopy system, capable of observing fluorescence probes in high resolution by radiating an irregular diffused light to have an incoherent speckle pattern that has low correlation in an adjacent space are disclosed. According to embodiments of the present invention, a diffraction limit of a fluorescence microscope may be overcome, and a super high resolution image on a nanometer scale may be obtained. | 2012-10-11 |
20120256102 | Dye-conjugated dendrimers - The invention provides dendrimers, conjugates thereof, and methods of using dendrimer conjugates. In one embodiment, the invention provides novel polymeric dendrimers as a new class of fluorescent labels. The labels can include multiple fluorescent dye molecules conjugated to a single polymeric backbone or core, such as a dendrimer. The dendrimers can have regular or irregular branched polymeric network structures that allow for the chemical attachment of multiple dye molecules, multiple color dyes, and/or multiple functional groups, in a combinatorial fashion. The fluorescent dendritic nanoprobes (FDNs) thus provide a new class of fluorescent reporters for fluorescence microscopy and imaging. | 2012-10-11 |
20120256103 | MODIFYING RADIATION BEAM SHAPES - A patient's lesion is localized for the purpose of administering radiation treatment by obtaining a beam shape representation along one or more beam directions of a radiation treatment device. An image corresponding to the lesion is obtained from each beam direction, and the beam shape and image are fixed to a common coordinate system to facilitate alignment. | 2012-10-11 |
20120256104 | PHASE CHANGE DEVICE HAVING PHASE CHANGE RECORDING FILM, AND PHASE CHANGE SWITCHING METHOD FOR PHASE CHANGE RECORDING FILM - Allow the rate of phase change to be controlled at the time period of phonons (approx. 270 fs) for the purpose of achieving a substantially higher recording-erasing speed compared to what can be achieved with conventional technologies relating to optical recording media using phase change. A femtosecond pulse laser is shaped into pulse trains each having a first pulse and a second pulse using a Michelson interferometer, and the time interval of first and second pulses is matched with the time period of lattice vibration of a material constituting the phase change recording film to be irradiated, thereby inducing phase change. | 2012-10-11 |
20120256105 | SEMICONDUCTOR EXPOSURE DEVICE USING EXTREME ULTRA VIOLET RADIATION - The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity. | 2012-10-11 |
20120256106 | ELECTRON BEAM EXPOSURE APPARATUS AND ELECTRON BEAM EXPOSURE METHOD - In a multi-column electron beam exposure apparatus for performing exposure treatment in parallel by arranging a plurality of column cells on a wafer, a relationship between exposure intensity and a line width for each column cell is obtained (Steps S | 2012-10-11 |
20120256107 | QUIET BLEED VALVE FOR GAS TURBINE ENGINE - A bleed valve that expels a gas from a compressed region includes a valve section and a muffler section coupled to and located downstream from the valve section. The valve section includes a centerbody and a housing. The centerbody supports a plunger that controls opening and closing of the bleed valve. The centerbody is coupled to the housing by at least one strut disposed substantially radially. The at least one strut may have a cross-section that reduces or suppresses flow separation and vortex shedding from the at least one strut. The muffler section may include a baffle plate and a dome plate. A honeycomb may be installed between the baffle plate and the dome plate. The bleed valve may also include a middle plate on a face of the honeycomb and a conical diverter immediately upstream from the baffle plate. Other embodiments are also described. | 2012-10-11 |
20120256108 | Flow control actuator - An actuator ( | 2012-10-11 |
20120256109 | Magnetic Valve and Driver Assistance Device having such a Magnetic Valve - A magnetic valve includes a main body and a closure element, which is connected to an end region of the main body and which can be impinged by a fluid pressure. The main body has at least one first support surface allocated to the closure element in the end region thereof. A support element is provided, which is connected to the main body and has at least one other second support surface serving as a bearing surface or forms the bearing surface together with the first support surface. The bearing surface is larger than the first support surface. | 2012-10-11 |
20120256110 | SYSTEMS AND METHODS FOR AUTOMATING THE OPERATION OF SOLENOID VALVES TO PREVENT OVERHEATING OF SOLENOID ELEMENTS - Embodiments of the invention are directed to systems and methods for automating the operation of a solenoid valve to prevent overheating of solenoid elements. The solenoid valve controls the flow of a fluid, such as gas, and may be automatically interrupted, or shut-off, of power upon the occurrence of fluctuating currents or other events. Once the problem has been removed or repaired, the flow of fluid through the solenoid valve may resume. | 2012-10-11 |
20120256111 | SPLIT GATE VALVE - Provided in some embodiments is a system that includes a split gate valve including first and second gate sections coupled together and configured to move together within a cavity of the split gate valve between an open position and a closed position. The split gate valve includes a rolling actuator to reduce friction and to convert a rotational input into a linear motion to move the first and second gate sections between the open and closed positions. In other embodiments is provided a method that includes converting a rotational input into a linear motion to activate a split gate valve via a rolling actuator. The method also includes seating first and second gate sections of the split gate valve against opposite first and second seats to provide a double seal. | 2012-10-11 |
20120256112 | Low friction and gradually opening butterfly valve vane - The invention relates to vanes used in butterfly valves utilized in fluid control systems requiring special relationships between passing fluid and vane rotation and furthermore can provide leak proof shut-off when in the closed valve position and due to the extended contact length between the vane and the valve bore assures low opening friction. The invention furthermore features a shape that greatly reduces the customary high dynamic torque created by fluid suction effects on a vane when in the open position. | 2012-10-11 |
20120256113 | REPLACEABLE FLOATING GATE VALVE SEAT SEAL - A gate valve includes a floating gate valve seat that effects a seal between a gate of a gate valve and a gate valve body using a metal seal. The gate valve includes a floating gate valve seat interposed between a gate and a gate valve body. The gate valve seat has a spring member with a cylindrical portion secured to the gave valve seat. The spring member has a leg that exerts a spring force against the gate valve body to maintain a seal between the floating gate valve seat and the gate. A metal-to-metal seal seals between the cylindrical portion of the spring member and a cylindrical portion of the gate valve seat. | 2012-10-11 |
20120256114 | POWER INJECTABLE VALVE DESIGNS - Pressure activated valves for catheters with improved tolerance of high pressure and high flow conditions are described. Embodiments of the valve comprise a flexible membrane with one or more linear slits therethrough, and means for applying tension to the flexible membrane in-line with the linear slits. The application of tension may optionally be facilitated by structural features of both the flexible membrane and the valve housing. | 2012-10-11 |
20120256115 | AIR BYPASS VALVE DEVICE - An air bypass valve device includes a case | 2012-10-11 |
20120256116 | HEAT RESISTANT AND FIRE RETARDANT MATERIALS AND METHODS FOR PREPARING SAME - A silica cement blend is provided having insulating, fire retarding and high temperature characteristics that is capable of withstanding temperatures greater than 4000° F. without degradation of the concrete structure. In addition to its high temperature capabilities, the blend can be produced as ultra light weight to heavy weight concrete. Also provided are methods for reducing fire damage by coating interior/exterior walls, ceiling, and roofs of a building with a water based latex coating containing a fire retardant material and low heat conductivity silicas. | 2012-10-11 |
20120256117 | CONDUCTIVE POLYMER SUSPENSION AND METHOD FOR PRODUCING THE SAME, CONDUCTIVE ORGANIC MATERIAL, AND ELECTROLYTIC CAPACITOR AND METHOD FOR PRODUCING THE SAME - Provided are an electroconductive polymer suspension solution and a method for producing the same, which has excellent adhesion to a substrate and excellent liquid resistance and which can provide an organic material having high electroconductivity. An electroconductive polymer suspension solution of an exemplary embodiment of the invention contains an electroconductive polymer, at least one kind of a water-soluble polyhydric alcohol, and at least one kind of a water-soluble organic substance having two or more functional groups which can be polycondensed with the water-soluble polyhydric alcohol. The electroconductive polymer suspension solution can be produced by collecting an electroconductive polymer which is obtained by chemical oxidative polymerization of a monomer giving the electroconductive polymer by using an oxidant in a solvent containing an organic acid or a salt thereof as a dopant, by contacting the electroconductive polymer with an oxidant in an aqueous solvent containing a polyacid, and further by mixing at least one kind of a water-soluble polyhydric alcohol and at least one kind of a water-soluble organic substance having two or more functional groups which can be polycondensed with the water-soluble polyhydric alcohol. | 2012-10-11 |
20120256118 | MAGNETIC MATERIAL FOR HIGH-FREQUENCY USE, HIGH-FREQUENCY DEVICE AND MAGNETIC PARTICLES - Disclosed is a magnetic material for high-frequency use in which lower loss is achieved. The magnetic material for high-frequency use is formed from a composite material of magnetic particles and resin, the magnetic particles consist of a simple metal, an alloy, or an inter-metallic compound and have a positive magnetostriction constant, and the shapes of the particles are flattened by means of mechanical processing. | 2012-10-11 |
20120256119 | Use of Zeolites for Stabilizing Oils - The present invention relates to the use of zeolites or of agglomerates based on zeolites in order to improve the thermal stability of oils and the invention is targeted in particular at the use of these zeolitic compounds for stabilizing the oils or the formulations based on oils participating in the composition of refrigerants. | 2012-10-11 |
20120256120 | Process for Reducing the Total Acidity of Refrigerating Compositions - The present invention relates to a process for reducing the total acidity of refrigerating compositions comprising at least one refrigerant with at least one lubricant, said process comprising at least one stage of bringing said composition into contact with at least one zeolitic adsorbent based on powder formed of zeolite(s) or on agglomerates formed of zeolite(s). | 2012-10-11 |
20120256121 | METHOD FOR PRODUCING GRAPHENE SOLUTIONS, GRAPHENE ALKALI METAL SALTS, AND GRAPHENE COMPOSITE MATERIALS - The present invention relates to a process for preparing graphene solutions by means of alkali metal salts, to graphene solutions, to processes for preparing graphene alkali metal salts, to graphene alkali metal salts and to graphene composite materials and to processes for producing the graphene composite materials. | 2012-10-11 |
20120256122 | COMPOSITION FOR ETCHING OF RUTHENIUM-BASED METAL, AND PROCESS FOR PREPARATION OF THE SAME - A composition for etching of a ruthenium-based metal, in which there are added and mixed at least a bromine-containing compound, an oxidizing agent, a basic compound and water, wherein the amount of bromine-containing compound added is 2-25 mass %, as bromine, and the amount of oxidizing agent added is 0.1-12 mass %, with respect to the total mass, and the pH is at least 10 and less than 12. It is possible to accomplish efficient etching of ruthenium-based metals. | 2012-10-11 |
20120256123 | POSITIVE ACTIVE MATERIAL FOR RECHARGEABLE LITHIUM BATTERY, METHOD OF PREPARING THE SAME, AND RECHARGEABLE LITHIUM BATTERY INCLUDING THE SAME - The present invention relates to a positive active material for a rechargeable lithium battery, a method of preparing the same, and a rechargeable lithium battery including the same. More particularly, the present invention relates to a positive active material for a rechargeable lithium battery including a compound that can reversibly intercalate/deintercalate lithium and a lithium metal phosphate produced through binding with lithium of the compoound, the lithium metal phosphate existing from the surface of the compound to a predetermined depth, a method of preparing the positive active material, and a rechargeable lithium battery having the positive active material. The positive active material can accomplish excellent cycle-life characteristic and also, suppress battery swelling at a high temperature. | 2012-10-11 |
20120256124 | LIQUID-CRYSTALLINE MEDIUM AND LIQUID-CRYSTAL DISPLAY - The present invention relates to dielectrically positive, preferably nematic, media comprising one or more polymerisable compounds of formula I | 2012-10-11 |
20120256125 | PREPARATION OF COMPLEX FLUORIDE AND COMPLEX FLUORIDE PHOSPHOR - A complex fluoride A | 2012-10-11 |
20120256126 | Persistent phosphors of alkaline earths modified by halides and 3d ions - Phosphorescent compositions including silicate of alkaline earth materials which are modified by at least one halide are provided. The phosphorescent compositions may include 3d ions. A variety of embodiments may be realized. The appearance of some embodiments may be glassy (i.e., vitreous). | 2012-10-11 |
20120256127 | AUTOFLUORESCENT ORGAN PHANTOM AND ASSOCIATED METHOD OF PRODUCTION - A calibration device for instrumentation for medical imaging, also called a “phantom,” including a matrix. The calibration device includes at least one additive for simulating the autofluorescence properties of an organ or of a living tissue in the spectral band covering the red and near infrared, said additive belonging to the porphyrin class, such as protoporphyrin IX. | 2012-10-11 |
20120256128 | SYNGAS COOLER SYSTEM AND METHOD OF OPERATION - A process and system for cooling syngas provides effective syngas cooling and results in reduced levels of fouling in syngas cooling equipment. A process for cooling syngas includes blending syngas with cooled recycled syngas in an amount effective for providing a blended syngas with a temperature at an inlet of a syngas cooler of about 600° F. to about 1400° F. The blended syngas changes direction of flow at least once prior to the inlet of the syngas cooler. | 2012-10-11 |
20120256129 | Apparatus and Process for Gasification of Carbonaceous Materials to Produce Syngas - A process and apparatus are provided for gasification of a carbonaceous material. The process produces a raw syngas that can be further processed in a tar destruction zone to provide a hot syngas. The process includes contacting said carbonaceous material with molecular oxygen-containing gas in a gasification zone to gasify a portion of said carbonaceous material and to produce a first gaseous product. A remaining portion of the carbonaceous material is contacted with molecular oxygen-containing gas in a burn-up zone to gasify additional portion of the carbonaceous material and to produce a second gaseous product and a solid ash. The first gaseous product and said second gaseous product are combined to produce a raw syngas that includes carbon monoxide (CO), carbon dioxide (CO | 2012-10-11 |
20120256130 | Apparatus and Methods for Tar Removal from Syngas - A process and apparatus are provided for reducing content of tar in a tar containing syngas. The process includes contacting the tar containing syngas with a molecular oxygen containing gas in a first reaction zone to produce a gas mixture. The gas mixture is passed through a heat treatment zone maintained at a temperature between about 900° C. to about 2000° C. for a contact time of about 0.5 to about 5 seconds. In this aspect, at least a portion of the tar undergoes at least partial oxidation and/or cracking to produce a hot syngas. | 2012-10-11 |
20120256131 | Method of Operation of Process to Produce Syngas from Carbonaceous Material - A process is provided for producing syngas that is effective for use in downstream processes. The process for producing syngas includes operating a gasification apparatus in a start-up mode until the gasification apparatus and equipment downstream of the gasification apparatus are adequately warmed up to a first target temperature. Upon reaching a first target temperature, the process is then operated in a production mode to produce a second syngas with a higher CO/CO | 2012-10-11 |
20120256132 | METHOD FOR OPERATING A REFORMER OVEN AND A REFORMER INSTALLATION - A method for producing a synthesis-gas product gas and a vapor stream includes catalytic steam reforming a hydrocarbonaceous feedstock in a steam reformer. The hot synthesis-gas product gas stream is cooled in a heat exchanger to form a cooled synthesis-gas product gas stream and a first partial vapor stream, which is supplied to the product vapor stream. The reforming furnace is operated so as to burn a burner feedstock in burners, cool a hot flue gas stream from the burners in a heat exchanger to form a cooled flue gas stream and a second partial vapor stream, and separate the cooled flue gas stream into a waste gas stream and a flue gas recirculation stream. The flow of the recirculated flue gas is increased with decreasing flow of the synthesis-gas product gas to obtain an approximately constant product vapor stream by increasing the second partial vapor stream. | 2012-10-11 |
20120256133 | SYSTEM AND METHOD FOR DUAL FLUIDIZED BED GASIFICATION - A system, for production of high-quality syngas, comprising a first dual fluidized bed loop having a fluid bed conditioner operable to produce high quality syngas comprising a first percentage of components other than CO and H | 2012-10-11 |
20120256134 | FORMULATIONS INCLUDING NANOPARTICLES - The present invention relates to a formulation comprising a medium, one or more stabilizers, and one or more particles comprising nanoparticles included within a host material. In certain embodiments, a stabilizer comprises a HALS stabilizer. In certain embodiments, a stabilizer comprises a UVA stabilizer. In certain embodiments, the formulation includes a HALS stabilizer and a UVA stabilizer. In certain embodiments, nanoparticles have light-emissive properties. Other embodiments relate to a powder obtainable from a formulation of the invention, a composition including a powder of the invention, a coating comprising a formulation of the invention, and products and applications including a particle of the invention. In preferred embodiments, a nanoparticle comprises a semiconductor nanocrystal. In certain embodiments, a host material comprises a polymer. In certain embodiments, a host material comprises an inorganic material. A raw batch formulation and particle obtainable therefrom is also disclosed. | 2012-10-11 |
20120256135 | ELECTRORHEOLOGICAL FLUIDS AND METHODS - Electrorheological fluids and methods include changes in liquid-like materials that can flow like milk and subsequently form solid-like structures under applied electric fields; e.g., about 1 kV/mm. Such fluids can be used in various ways as smart suspensions, including uses in automotive, defense, and civil engineering applications. Electrorheological fluids and methods include one or more polar molecule substituted polyhedral silsesquioxanes (e.g., sulfonated polyhedral silsesquioxanes) and one or more oils (e.g., silicone oil), where the fluid can be subjected to an electric field. | 2012-10-11 |
20120256136 | Nitrile Solvent Composistions for Inkjet Printing of Organic Layers - A liquid composition (e.g., inkjet fluid) for forming an organic layer of an organic electronic device (e.g., an OLED). The liquid composition comprises a small molecule organic semiconductor material mixed in an aromatic solvent. The aromatic solvent, when left as a residue in the organic layer, is capable of presenting relatively reduced resistivity to charge transport or facilitating charge transport in the organic layer that is deposited, as compared to other conventional solvents. In certain embodiments, the aromatic solvent compound has the following formula: wherein R represents one or more optional substituents on the benzene ring, wherein each R is independently an aliphatic group containing from 1-15 carbon atoms; and wherein X is a substitution group that contains an electron-withdrawing group selected from nitrile, sulfonyl, or trifluoromethyl. | 2012-10-11 |
20120256137 | COMPOSITIONS COMPRISING ORGANIC SEMICONDUCTING COMPOUNDS - The present invention relates to novel compositions comprising an organic semiconductor (OSC) and a wetting agent, to their use as inks for the preparation of organic electronic (OE) devices, especially organic photovoltaic (OPV) cells and organic light emitting diode (OLED) devices, to methods for preparing OE devices using the novel compositions, and to OE devices, especially OLED devices and OPV cells prepared from such methods and compositions. The efficiency of an OE device with the inclusion of 1% volatile surfactant was 13.5 cd/A at 100 cd/m2 | 2012-10-11 |
20120256138 | ELECTROCHEMICAL DEVICE - Disclosed is an electrochemical device, using, as an electrode material, a poly(ionic liquid)-modified graphene manufactured by binding an ionic liquid polymer to the surface of graphene. | 2012-10-11 |
20120256139 | UV-CURABLE COATING CONTAINING CARBON NANOTUBES - The present invention provides a conductive, curable coating made from about 0.01 wt. % to about 5 wt. %, of multi-walled carbon nanotubes, having a diameter of greater than about 4 nm, about 10 wt. % to about 99 wt. % of an aliphatic urethane acrylate and about 0.1 wt. % to about 15 wt. % of a photoinitiator, wherein the coating is curable by exposure to radiation and wherein the cured coating has a surface resistivity of about 10 | 2012-10-11 |
20120256140 | USE OF 2-AMINO-2-METHYL-1-PROPANOL AS ADDITIVE IN AQUEOUS SUSPENSIONS OF CALCIUM CARBONATE COMPRISING MATERIALS - Use of 2-amino-2-methyl-1-propanol (AMP) as an additive in an aqueous suspension, containing from 25 to 62 vol. % of at least one calcium carbonate-comprising material and having a pH of between 8.5 and 11, to increase the suspension pH by at least 0.3 pH units, the AMP being added to said suspension in an amount of from 500 to 15000 mg per litre of the aqueous phase of the suspension, wherein the suspension conductivity change is maintained to within 100 μS/cm/pH unit. | 2012-10-11 |
20120256141 | PARTICLES INCLUDING NANOPARTICLES, USES THEREOF, AND METHODS - A particle comprising nanoparticles encapsulated within a host material is disclosed, wherein the particle includes a coating disposed over at least a portion of the outer surface of the particle. In certain embodiments, nanoparticles have light-emissive properties. In certain embodiments, the coating covers all or substantially all of the outer surface of the particle. The coating can comprise a resin having low oxygen permeability. In certain embodiments, the coating comprises a polyvinyl alcohol compound. In certain embodiments, the coating comprises a polyvinylidene dichloride compound. Other embodiments relate to a powder comprising a particle of the invention, a composition including a particle of the invention, a formulation including a particle of the invention, a coating comprising a particle of the invention, a method for making a particle of the invention, and products and applications including a particle of the invention. In preferred embodiments, a nanoparticle comprises a semiconductor nanocrystal. | 2012-10-11 |
20120256142 | METALLICALLY CONDICTIVE INK FOR INK-JET PRINTING AND METHOD FOR PRODUCING THE SAME - The invention relates to a metallic, conductive ink for ink-jet printing, comprising a metal precursor material, in particular an organometallic decomposition compound, and a thermally decomposable polymer dissolved in an organic solvent, wherein a polymer having a decomposition temperature T | 2012-10-11 |
20120256143 | Fire Resistant Coating - A fire-resistant coating composition and method that can be applied to various poles and substrates so as to substantially reduce the likelihood of fire and/or heat damage. The first-resistant coating composition having a first component and a second component. The first component may comprise isocyanate and a thickening agent, and the second component may comprise a multifunctional polyol, preferably a tetrafunctional polyol, most preferably an amine-based tetrafunctional polyol, titanium dioxide, diol ether, expandable graphite particles, a flame retardant additive, at least one thickening agent, and a catalyst. | 2012-10-11 |
20120256144 | Method And Apparatus For Installing Cable - A method of installing cable through material, for example, concrete, wood, masonry, plastic steel, or the like comprising a drill bit with a distal end having a hollow tip with an attachment mechanism for receiving the cable. The drill bit is drilled through the material, and left in place while the cable is attached to the proximal end of the drill bit. There is no need to remove the drill bit from the aperture or material to attach the cable thereto. After attachment to the drill bit, the cable is inserted through the aperture with the drill bit and removed from the drill bit after it passes through the material so it can be attached to a receiver device. | 2012-10-11 |
20120256145 | LIFTING APPARATUS, ESPECIALLY CABLE TRACTION MECHANISM, COMPRISING CONNECTING POSSIBILITIES - A lifting apparatus, especially a cable traction mechanism, comprising a base frame that has at least two base plates, further comprising at least two longitudinal beams that interconnect the base plates and are spaced apart from each other, and at least one attachable cross-member for cable reeving parts that is fastened to the base plates and extends substantially parallel to the longitudinal beams. Multiple mounting points, to which the attachable cross-member for cable reeving parts can be alternatively and detachably fastened, may be arranged on each of the base plates to promote modularity of the lifting apparatus. | 2012-10-11 |
20120256146 | ADJUSTING DRIVE - An adjusting drive | 2012-10-11 |
20120256147 | FENCE DROPPERS, FENCE CLIPS AND FENCING SYSTEMS - A fencing system comprises a fence dropper and a fence clip that couples a fence wire to the fence dropper. The fence dropper comprises an elongate body having a cross-section comprising a pair of spaced apart walls coupled by a web. At least one slot is provided in each wall on a first side of the web for capturing the fence wire. A ratio of a slot breaking mass to a cross sectional area of the fence dropper is substantially optimised. The fence clip comprises an elongate wire bent into an asymmetric shape and comprises a central portion which abuts a second side of the fence dropper and an arm extending from each end of the central portion. A hook portion of each arm captures the fence wire and a lever or lever portion of the hook portions extends the length of the fence clip to facilitate installation. | 2012-10-11 |
20120256148 | SECURITY ENCLOSURE - A security enclosure in accordance with the present disclosure includes several wall units. The wall units are connected to one another in series to form a closed space bounded by the interconnected wall units that serves as a play area for children and pets. | 2012-10-11 |
20120256149 | Roll Up Gate System - A gate system for use with a gate opening which spans between two opposing ends includes an elongate sheet of flexible mesh fencing material spanning in a longitudinal direction between a first end and a second end thereof and which is wound onto a shaft coupled to the first end of the sheet. A housing rotatably supports the shaft therein such that the sheet of flexible mesh fencing material is arranged to be dispensed through an elongate dispensing slot in the housing to span the gate opening. Connectors on the housing and on the second end of the fencing allow selective mounting to appropriate mounts at opposing ends of the gate opening which remain engaged when the first end of the fencing material is wound onto the shaft sufficiently that the remainder of the fencing material spans under a prescribed tension across the gate opening. | 2012-10-11 |
20120256150 | Integrated Circuitry, Methods of Forming Memory Cells, and Methods of Patterning Platinum-Containing Material - Some embodiments include methods of patterning platinum-containing material. An opening may be formed to extend into an oxide. Platinum-containing material may be formed over and directly against an upper surface of the oxide, and within the opening. The platinum-containing material within the opening may be a plug having a lateral periphery. The lateral periphery of the plug may be directly against the oxide. The platinum-containing material may be subjected to polishing to remove the platinum-containing material from over the upper surface of the oxide. The polishing may delaminate the platinum-containing material from the oxide, and may remove the platinum-containing material from over the oxide with an effective selectivity for the platinum-containing material relative to the oxide of at least about 5:1. Some embodiments include methods of forming memory cells. Some embodiments include integrated circuitry having platinum-containing material within an opening in an oxide and directly against the oxide. | 2012-10-11 |
20120256151 | Memory Cells, Methods of Forming Memory Cells and Methods of Forming Memory Arrays - Some embodiments include memory cells which have multiple programmable material structures between a pair of electrodes. One of the programmable material structures has a first edge, and another of the programmable material structures has a second edge that contacts the first edge. Some embodiments include methods of forming an array of memory cells. First programmable material segments are formed over bottom electrodes. The first programmable material segments extend along a first axis. Lines of second programmable material are formed over the first programmable material segments, and are formed to extend along a second axis that intersects the first axis. The second programmable material lines have lower surfaces that contact upper surfaces of the first programmable material segments. Top electrode lines are formed over the second programmable material lines. | 2012-10-11 |
20120256152 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor device includes: forming a first insulating film that covers a substrate; forming a conductive plug that penetrates the first insulating film; forming a hole portion on the conductive plug by partly removing upper part of the conductive plug, wherein the hole portion has a top surface of the conductive plug as a bottom surface, and has the first insulating film of a portion that covered the partly removed conductive plug as a sidewall; forming a sidewall insulating film that exposes a part of the bottom surface of the hole portion while covering the sidewall of the hole portion and a bottom portion of the hole portion; forming a variable resistance film that covers the sidewall insulating film and the bottom surface of the hole portion; and forming a conductive film that covers the variable resistance film. | 2012-10-11 |
20120256153 | DIODE FOR VARIABLE-RESISTANCE MATERIAL MEMORIES, PROCESSES OF FORMING SAME, AND METHODS OF USING SAME - A variable-resistance material memory (VRMM) device includes a container conductor disposed over an epitaxial semiconductive prominence that is coupled to a VRMM. A VRMM device may also include a conductive plug in a recess that is coupled to a VRMM. A VRMM array may also include a conductive plug in a surrounding recess that is coupled to a VRMM. Apparatuses include the VRMM with one of the diode constructions. | 2012-10-11 |
20120256154 | Semiconductor Phase Change Memory Using Multiple Phase Change Layers - In accordance with some embodiments, a phase change memory may be formed in which the thermal conductivity in the region outside the programmed volume of phase change material is reduced. This may reduce the power consumption of the resulting phase change memory. The reduction in power consumption may be achieved by forming distinct layers of phase change material that have little or no mixing between them outside the programmed volume. For example, in one embodiment, a diffusion barrier layer may be maintained between the two distinct phase change layers. In another embodiment, a face centered cubic chalcogenide structure may be utilized. | 2012-10-11 |
20120256155 | Closed loop sputtering controlled to enhance electrical characteristics in deposited layer - This disclosure provides a method of fabricating a semiconductor device layer and an associated memory cell. Empirical data may be used to generate a hysteresis curve associated with deposition for a metal-insulator-metal structure, with curve measurements reflecting variance of an electrical property as a function of cathode voltage used during a sputtering process. By generating at least one voltage level to be used during the sputtering process, where the voltage reflects a suitable value for the electrical property from among the values obtainable in mixed-mode deposition, a semiconductor device layer may be produced with improved characteristics and durability. A multistable memory cell or array of such cells manufactured according to this process can, for a set of given materials, be fabricated to have minimal leakage or “off” current characteristics (I | 2012-10-11 |
20120256156 | MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed is a memory device provided with a plurality of memory cells and a lead-out line ( | 2012-10-11 |
20120256157 | SEMICONDUCTOR DEVICE - For example, one memory cell is configured using two memory cell transistors and one phase change element by disposing a plurality of diffusion layers in parallel to a bit-line, disposing gates between the diffusion layers so as to cross the bit-line, disposing bit-line contacts and source contacts alternately to the plurality of diffusion layers arranged in a bit-line direction for each diffusion layer, and providing a phase change element on the source contact. Also, the phase change element can be provided on the bit-line contact instead of the source contact. By this means, for example, increase in drivability of the memory cell transistors and reduction in area can be realized. | 2012-10-11 |
20120256158 | Al(x)Ga(1-x)N-CLADDING-FREE NONPOLAR III-NITRIDE BASED LASER DIODES AND LIGHT EMITTING DIODES - A method for fabricating Al | 2012-10-11 |
20120256159 | LED Device Architecture Employing Novel Optical Coating and Method of Manufacture - An improved LED device is disclosed and includes at least one active layer in communication with an energy source and configured to emit a first electromagnetic signal within a first wavelength range and at least a second electromagnetic signal within at least a second wavelength range, a substrate configured to support the active layer, at least one coating layer formed from alternating layers of silicon carbide and alumina applied to a surface of the substrate, the coating layer configured to reflect at least 95% of the first electromagnetic signal at the first wavelength range and transmit at least 95% of the second electromagnetic signal at the second wavelength range, at least one metal layer applied to the coating layer and configured to transmit the second electromagnetic signal at the second wavelength range therethrough, and an encapsulation device positioned to encapsulate the active layer. | 2012-10-11 |
20120256160 | Piezo-phototronic Effect Devices - A semiconducting device includes a piezoelectric structure that has a first end and an opposite second end. A first conductor is in electrical communication with the first end and a second conductor is in electrical communication with the second end so as to form an interface therebetween. A force applying structure is configured to maintain an amount of strain in the piezoelectric member sufficient to generate a desired electrical characteristic in the semiconducting device. | 2012-10-11 |
20120256161 | Light Diode - A light-emitting diode is specified, comprising a first semiconductor body ( | 2012-10-11 |
20120256162 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A light emitting diode includes a substrate, an N-type semiconductor layer arranged on the substrate, an active layer, and a P-type semiconductor layer. The active layer includes a first barrier layer, a second barrier layer, and a quantum well structure layer arranged between the first and second barrier layers. The quantum well structure layer includes an InN layer, a GaN layer and an InGaN layer arranged on the first barrier layer in sequence. The InN layer has an upper surface connected to the GaN layer. The upper surface is rough. The InGaN layer has a concentration of In atoms in some regions of the InGaN layer which is higher that that in other regions thereof. The P-type semiconductor layer is arranged on the second barrier layer. | 2012-10-11 |
20120256163 | LIGHT EMITTING UNIT AND DISPLAY DEVICE INCLUDING THE SAME - A display device including a display panel and a light emitting unit providing light to the display panel is described herein. The light emitting unit includes a light emitting diode and a light emitting layer. The light emitting diode emits a first light. The light emitting layer includes quantum dots and fluorescent particles. The quantum dots are disposed on the light emitting diode and absorb the first light to emit a second light of a wavelength different from that of the first light. The fluorescent particles absorb the first light to emit a third light of a wave length different from those of the first and second light. | 2012-10-11 |
20120256164 | OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF - An optoelectronic device has a substrate and a first window layer on the substrate with a first sheet resistance, a first thickness, and a first impurity concentration. A second window layer has a second sheet resistance, a second thickness, and a second impurity concentration. A semiconductor system is between the first window layer and the second window layer. The second window layer has a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. A method for manufacturing is provided, having the steps of providing a substrate, forming a semiconductor system on the substrate, and forming a window layer on the semiconductor system. The window layer has a semiconductor material different from the semiconductor system. Selectively removing the window layer forms a width difference greater than 1 micron between the window layer and semiconductor system. | 2012-10-11 |
20120256165 | SINGLE-QUANTUM DOT DEVICE AND METHOD OF MANUFACTURING THE SAME - The present disclosure provides a single-quantum dot device and a method of manufacturing the same. A transparent dielectric thin film is formed on a cover layer and an energy band of quantum dots is adjusted based on compressive stress due to difference in coefficient of thermal expansion therebetween. Specifically, the dielectric thin film has a lower coefficient of thermal expansion than the cover layer and compressive stress is applied to the cover layer by radiation of laser beams. Then, the quantum dots undergo compressive stress and the energy band of the quantum dots increases with increasing intensity of the laser beams. | 2012-10-11 |
20120256166 | DEPOSITION OF NANOPARTICLES - The invention relates to a process for deposition of elongated nanoparticles from a liquid carrier onto a substrate, and to electronic devices prepared by this process. | 2012-10-11 |
20120256167 | GRAPHENE ELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME - The graphene electronic device may include a gate oxide on a conductive substrate, the conductive substrate configured to function as a gate electrode, a pair of first metals on the gate oxide, the pair of the first metals separate from each other, a graphene channel layer extending between the first metals and on the first metals, and a source electrode and a drain electrode on both edges of the graphene channel layer. | 2012-10-11 |
20120256168 | Semiconductor Devices And Methods Of Manufacturing The Same - According to example embodiments, a semiconductor device includes a first electrode, a second electrode apart from the first electrode, and an active layer between the first and second electrodes. The active layer includes first and second layers, the first layer contacts the first and second electrodes, and the second layer is separated from at least one of the first and second electrodes. | 2012-10-11 |
20120256169 | SUBSTITUTED OLIGOAZACARBAZOLES FOR LIGHT EMITTING DIODES - Novel compounds containing substituted oligoazacarbazole chains are provided. These compounds are useful in organic light emitting devices, in particular as hosts in the emissive layer of such devices. | 2012-10-11 |
20120256170 | Organic Component and Method for the Production Thereof - A device comprising: a first substrate ( | 2012-10-11 |
20120256171 | PHOSPHINE OXIDE COMPOUND, ORGANIC ELECTROLUMINESCENCE ELEMENT, PRODUCTION METHOD AND USES THEREOF - A compound having a stable deposition rate suitable for forming an electron-transporting layer of an organic El element. The compound is represented by the following formula (1): | 2012-10-11 |
20120256172 | ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device sequentially includes an anode, an emitting layer, an electron-transporting region, and a cathode, the electron-transporting region including an electron-transporting material that includes a cyano group and an aromatic ring group. | 2012-10-11 |
20120256173 | CHARGE TRANSPORTING MATERIAL AND ORGANIC ELECTROLUMINESCENCE DEVICE - In order to provide an organic electroluminescence device with high luminous efficiency and good durability, the present invention provides a charge transporting material including a compound represented by Formula (Cz-1) wherein the content of a particular halogen-containing impurity in the charge transporting material is from 0.000% to 0.10% when the content is calculated as a proportion of the absorption intensity area of the impurity with respect to the total absorption intensity area of the charge transporting material, as measured by high-performance liquid chromatography at a measurement wavelength of 254 nm, and an organic electroluminescence device wherein the charge transporting material is included in an organic layer: | 2012-10-11 |
20120256174 | COMPOUND FOR AN ORGANIC PHOTOELECTRIC DEVICE, ORGANIC PHOTOELECTRIC DEVICE INCLUDING THE SAME, AND DISPLAY DEVICE INCLUDING THE ORGANIC PHOTOELECTRIC DEVICE - A compound for an organic photoelectric device, the compound being represented by Chemical Formula 1 or 2: | 2012-10-11 |
20120256175 | NANOTUBE ENABLED, GATE-VOLTAGE CONTROLLED LIGHT EMITTING DIODES - Embodiments of the invention relate to vertical field effect transistor that is a light emitting transistor. The light emitting transistor incorporates a gate electrode for providing a gate field, a first electrode comprising a dilute nanotube network for injecting a charge, a second electrode for injecting a complementary charge, and an electroluminescent semiconductor layer disposed intermediate the nanotube network and the electron injecting layer. The charge injection is modulated by the gate field. The holes and electrons, combine to form photons, thereby causing the electroluminescent semiconductor layer to emit visible light. In other embodiments of the invention a vertical field effect transistor that employs an electrode comprising a conductive material with a low density of states such that the transistors contact barrier modulation comprises barrier height lowering of the Schottky contact between the electrode with a low density of states and the adjacent semiconductor by a Fermi level shift. | 2012-10-11 |
20120256176 | THIN FILM TRANSISTOR, ORGANIC LUMINESCENCE DISPLAY INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE ORGANIC LUMINESCENCE DISPLAY - A thin film transistor (TFT) including a substrate; a gate electrode formed over the substrate, an active layer insulated from the gate electrode by using a gate insulation film; an etch stop layer which is formed over the active layer and includes first and second holes for exposing the active layer; a first electrode; and a second electrode including a first part and a second part. The first part is formed over the etch stop layer, and the second part is received in the second hole, contacts the active layer directly, and connects the first part to the active layer. At least one portion of the first part of the second electrode overlaps with the gate electrode. The second part of the second electrode does not overlap with and is separated from the gate electrode. | 2012-10-11 |
20120256177 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A transistor including an oxide semiconductor with favorable electric characteristics and a manufacturing method thereof are provided. A semiconductor device includes a transistor. The transistor includes an oxide semiconductor film over a base insulating film, a gate electrode overlapping with the oxide semiconductor film with a gate insulating film interposed therebetween, and a pair of electrodes in contact with the oxide semiconductor film and serving as a source electrode and a drain electrode. The base insulating film includes a first oxide insulating film partly in contact with the oxide semiconductor film and a second oxide insulating film in the periphery of the first oxide insulating film. An end portion of the oxide semiconductor film which crosses the channel width direction of the transistor is located over the first oxide insulating film. | 2012-10-11 |
20120256178 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A transistor including an oxide semiconductor with favorable electric characteristics and a manufacturing method thereof are provided. A semiconductor device includes a transistor. The transistor includes an oxide semiconductor film over a base insulating film, a gate electrode overlapping with the oxide semiconductor film with a gate insulating film interposed therebetween, and a pair of electrodes in contact with the oxide semiconductor film and serving as a source electrode and a drain electrode. The base insulating film includes a first oxide insulating film partly in contact with the oxide semiconductor film and a second oxide insulating film in the periphery of the first oxide insulating film. An end portion of the oxide semiconductor film which crosses the channel width direction of the transistor is located over the second oxide insulating film. | 2012-10-11 |
20120256179 | TRANSISTOR AND DISPLAY DEVICE - To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced. | 2012-10-11 |
20120256180 | METHOD OF EVALUATING A SEMICONDUCTOR WAFER DICING PROCESS - Embodiments of the disclosure relate to a method of evaluating a semiconductor wafer dicing process, comprising providing evaluation lines extending in at least one scribe line of the wafer, dicing the wafer in the scribe line, evaluating the length of the evaluation lines, providing an information about their length, and using the information to evaluate the dicing process. | 2012-10-11 |
20120256181 | POWER-GENERATING MODULE WITH SOLAR CELL AND METHOD FOR FABRICATING THE SAME - The invention discloses a power-generating module with solar cell and method for fabricating the same. The power-generating module includes a flexible substrate, a circuit and a solar cell. Both of the circuit and the solar cell are formed on the flexible substrate and are connected with each other, such that the solar cell is capable of providing the power needed by the circuit for operation. | 2012-10-11 |
20120256182 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY UNIT - A thin film transistor having a crystalline silicon film that is formed by irradiating an amorphous silicon film with a light beam through a photothermal conversion layer and an insulating film to provide the amorphous silicon film with heat treatment. | 2012-10-11 |
20120256183 | THIN FILM TRANSISTOR ARRAY SUBSTRATE, COLOR FILTER SUBSTRATE AND DISPLAY DEVICE - Embodiments of the disclosed technology provide to a thin film transistor array substrate comprising a first base substrate; a gate line formed on the first base substrate; and two data lines separately formed on the first base substrate; wherein the two data lines are located on both sides of the gate line respectively in the direction of data signal transmission but do not overlap with the gate line. The two data lines can be electrically connected through conductive elements for transmitting data signals. | 2012-10-11 |
20120256184 | SEMICONDUCTOR DEVICE, ACTIVE MATRIX SUBSTRATE AND DISPLAY DEVICE - A switching element (a semiconductor device) ( | 2012-10-11 |
20120256185 | SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCTION THEREOF, AND DISPLAY DEVICE - The semiconductor device ( | 2012-10-11 |
20120256186 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed is an organic light-emitting display device including a transparent substrate which includes a display portion and a pad portion formed in a region around the display portion, a first semiconductor layer formed on the display portion, a second semiconductor layer formed on the pad portion, and a transparent electrode formed on each of the first the second semiconductor layers, where the first and second semiconductor layers include the same material. | 2012-10-11 |
20120256187 | DOUBLE SUBSTRATE MULTI-JUNCTION LIGHT EMITTING DIODE ARRAY STRUCTURE - The present disclosure provides one embodiment of a light-emitting structure. The light-emitting structure includes a carrier substrate having first metal features; a transparent substrate having second metal features; a plurality of light-emitting diodes (LEDs) bonded with the carrier substrate and the transparent substrate, sandwiched between the carrier substrate and the transparent substrate; and metal pillars bonded to the carrier substrate and the transparent substrate, each of the metal pillars being disposed between adjacent two of the plurality of LEDs, wherein the first metal features, the second metal features and the metal pillars are configured to electrically connect the plurality of LEDs. | 2012-10-11 |
20120256188 | Stacked Composite Device Including a Group III-V Transistor and a Group IV Lateral Transistor - In one implementation, a stacked composite device comprises a group IV lateral transistor and a group III-V transistor stacked over the group IV lateral transistor. A drain of the group IV lateral transistor is in contact with a source of the group III-V transistor, a source of the group IV lateral transistor is coupled to a gate of the group III-V transistor to provide a composite source on a top side of the stacked composite device, and a drain of the group III-V transistor provides a composite drain on the top side of the stacked composite device. A gate of the group IV lateral transistor provides a composite gate on the top side of the stacked composite device, and a substrate of the group IV lateral transistor is on a bottom side of the stacked composite device. | 2012-10-11 |
20120256189 | Stacked Composite Device Including a Group III-V Transistor and a Group IV Vertical Transistor - In one implementation, a stacked composite device comprises a group IV vertical transistor and a group III-V transistor stacked over the group IV vertical transistor. A drain of the group IV vertical transistor is in contact with a source of the group III-V transistor, a source of the group IV vertical transistor is coupled to a gate of the group III-V transistor to provide a composite source on a bottom side of the stacked composite device, and a drain of the group III-V transistor provides a composite drain on a top side of the stacked composite device. A gate of the group IV vertical transistor provides a composite gate on the top side of the stacked composite device. | 2012-10-11 |
20120256190 | Stacked Composite Device Including a Group III-V Transistor and a Group IV Diode - In one implementation, a stacked composite device comprises a group IV diode and a group III-V transistor stacked over the group IV diode. A cathode of the group IV diode is in contact with a source of the group III-V transistor, an anode of the group IV diode is coupled to a gate of the group III-V transistor to provide a composite anode on a bottom side of the stacked composite device, and a drain of the group III-V transistor provides a composite cathode on a top side of the stacked composite device. | 2012-10-11 |
20120256191 | EPITAXIAL GROWTH METHOD AND DEVICES - Epitaxial growth methods and devices are described that include a textured surface on a substrate. Geometry of the textured surface provides a reduced lattice mismatch between an epitaxial material and the substrate. Devices formed by the methods described exhibit better interfacial adhesion and lower defect density than devices formed without texture. Silicon substrates are shown with gallium nitride epitaxial growth and devices such as LEDs are formed within the gallium nitride. | 2012-10-11 |
20120256192 | RECESSED TERMINATION STRUCTURES AND METHODS OF FABRICATING ELECTRONIC DEVICES INCLUDING RECESSED TERMINATION STRUCTURES - An electronic device includes a drift region, a Schottky contact on a surface of the drift region, and an edge termination structure in the drift region adjacent the Schottky contact. The edge termination structure includes a recessed region that is recessed from the surface of the drift region by a distance d that may be about 0.5 microns. | 2012-10-11 |
20120256193 | MONOLITHIC INTEGRATED CAPACITORS FOR HIGH-EFFICIENCY POWER CONVERTERS - A semiconductor structure such as a power converter with an integrated capacitor is provided, and comprises a semiconductor substrate, a high-side output power device over the substrate at a first location, and a low-side output power device over the substrate at a second location adjacent to the first location. A first metal layer is over the high-side output power device and electrically coupled to the high-side output power device, and a second metal layer is over the low-side output power device and electrically coupled to the low-side output power device. A dielectric layer is over a portion of the first metal layer and a portion of the second metal layer, and a top metal layer is over the dielectric layer. The integrated capacitor comprises a first bottom electrode that includes the portion of the first metal layer, a second bottom electrode that includes the portion of the second metal layer, the dielectric layer over the portions of the first and second metal layers, and a top electrode that includes the top metal layer over the dielectric layer. | 2012-10-11 |
20120256194 | SEMICONDUCTOR DEVICE - Disclosed is a semiconductor device having a structure capable of reducing the self-inductance of internal wiring. The semiconductor device includes: a lower board having a lower conductor layer formed on the surface thereof; a switching element bonded to the lower conductor layer in an element bonding area; a terminal bonded to the lower conductor layer in a terminal bonding area; an upper board stacked on the lower board in a board bonding area between the element bonding area and the terminal bonding area, and having an upper conductor layer on the surface thereof; and a switching element connecting member which connects the switching element with the upper conductor layer. | 2012-10-11 |