40th week of 2010 patent applcation highlights part 14 |
Patent application number | Title | Published |
20100252755 | Infrared emitter - An infrared emitter for use with self-propelled aerial targets used to simulate jet aircraft for use as a target for anti-aircraft missile systems. The emitter provides an infrared source that simulates the infrared energy produced by an aircraft. The emitter incorporates a network of platinum beads that are arranged along and between a plurality of parallel stainless steel screens. The network is contained in a heating conduit that is secured to a housing. The housing is provided with an opening to allow for attachment to the exhaust ports of a self-propelled aerial target's engine. Combustion gases produced by the aerial target's engine are expelled through the exhaust port and pass through to the emitter. The gases heat the network of beads and screens thereby causing the network to emit an infrared signature such that the heat seeking/sensing mechanisms of anti-aircraft missiles systems are able to locate and direct the missile to the target. The technology is also applicable to surface targets for both marine and land applications. | 2010-10-07 |
20100252756 | APPARATUS FOR ACQUIRING DIGITAL X-RAY IMAGE - Provided is an apparatus for acquiring a digital X-ray image that radiates X-ray on a patient's part by using a high sensitivity imaging plate (IP), reads the radiated patient's part, acquires a signal including patient information and image information regarding a patient, converts the signal into a digital signal, and links the digital signal to external equipment. | 2010-10-07 |
20100252757 | MAGNETIC ACTUATOR AND A VALVE COMPRISING SUCH AN ACTUATOR - A magnetic actuator ( | 2010-10-07 |
20100252758 | Staging Valve Arrangement and Valve for Use Therein - A staging valve arrangement is described that comprises an arrangement of electrically driven staging valves that are located, in use, in the high temperature core zone of an engine. Each staging valve may comprise a housing having an inlet, a pilot flow outlet and a mains flow outlet, a valve member movable between a closed position in which the mains flow outlet is closed and an open position in which the mains flow outlet is open, a motor operable to drive the valve member for movement, and a cooling arrangement. | 2010-10-07 |
20100252759 | Automatic bathroom flushers - An automatic bathroom flusher includes a flusher body, a valve assembly, an electronic control system, and a flusher cover. The flusher body includes an inlet and an outlet, and is designed to accommodate the valve assembly that controls water flow between the inlet and the outlet. The valve assembly includes a valve member movable with respect to a valve seat providing a sealing action. The bathroom flusher may include a user sensor, and one or more photovoltaic cells for supplying electrical power to the electronic control system. The bathroom flusher enables two or multiple flush volumes in automatic or manual modes, depending on a user action. The bathroom flusher may include a user interface including a button and visible LEDs. | 2010-10-07 |
20100252760 | SOLENOID VALVE - A double valve has two coils which can be piloted separately from each other and which each have a core. The coils are arranged in a common valve housing, and a flange housing is mounted to the valve housing. Two valve seats are arranged in the flange housing, and a diaphragm is associated with the two valve seats, with each coil being associated with one valve seat. | 2010-10-07 |
20100252761 | PRESSURE RETAINING SLEEVE - A magnetic core ( | 2010-10-07 |
20100252762 | VALVE CARTRIDGE FOR A SOLENOID VALVE, AND ASSOCIATED SOLENOID VALVE - The invention relates to a valve cartridge for a solenoid valve having a capsule, a magnetic armature that is movably guided within the capsule, a valve insert inserted into the capsule at a first end, and a valve body, which is pressed into a second end of the valve insert, and having a main valve seat. The magnetic armature, moved by a generated magnetic force, moves a tappet that is guided within the valve insert. The tappet has a locking element which includes a sealing element which plunges into the main valve seat of the valve body in a sealing manner for carrying out a sealing function, and an associated solenoid valve. According to the invention, the valve insert is configured as a slotted bushing, having a collar integrated onto the second end of the valve insert in order to increase an outer diameter and a shape stability of the valve insert. | 2010-10-07 |
20100252763 | PRESSURE REGULATING VALVE - A pressure regulating valve having a compression spring fixed in a valve housing for positioning a valve plunger connected to a magnetic armature in the position above a valve seat and not electromagnetically excited, in order to create a connection between at least two pressure medium channels opening into the valve housing, and having a further compression spring disposed coaxially to the first compression spring in the valve housing, having the characteristic that the first compression spring is designed as a control spring forming a stroke and force-specific spring drive by adjusting the spring rates of both compression springs to the force/distance curve of an electromagnet by varying the current in an exciter coil, wherein the further compression spring is designed as a variably adjustable spring acting opposite to the control spring. | 2010-10-07 |
20100252764 | CONNECTING ELEMENT AND ASSOCIATED FLUID ASSEMBLY - The invention relates to a connecting element for the electric connection of a solenoid valve to a circuit board, having a first electric contact element for electrically contacting the solenoid valve, a second electric contact element for electrically contacting the circuit board, and at least one tolerance adjusting element, and a related fluid assembly. According to the invention the connecting element is configured as one piece, and the first electric contact element and the second electric contact element are connected to each other via the at least one tolerance adjusting element. A first modifiable tolerance adjusting element enables a length adjustment in at least one spatial direction in order to predetermine a desired spatial positioning of the first contact element and the second contact element relative to each other. | 2010-10-07 |
20100252765 | Tapping Armature For A Transport And Storage Container For Liquids - A tapping armature having an armature housing is made from plastic for liquid transport and storage containers, which are equipped with a plastic inner container having a filling port and a drain port for connection of the tapping armature, an outer casing made from metal mesh or sheet metal, and a pallet-like base made from metal. The tapping armature with the filling port of the armature housing is screwed to a connecting flange designed as a threaded flange and made from an electrically non-conductive plastic material, which is welded to the drain port of the inner container. The connecting flange of the armature housing is connected to the base of the outer casing of the transport and storage container via an grounding lead made from an electrically conductive plastic material. The connecting flange and the grounding lead are produced in two production steps with an injection molding machine according to 2K technology. In a further embodiment of the tapping armature, the connecting flange and the grounding cable are injection molded as a single part from an electrically conductive plastic, and the grounding cable is connected to the flange ring of the connecting flange by a tear-off film. | 2010-10-07 |
20100252766 | Adjustable Damping Valve Device - An adjustable damping valve device, for a vibration damper, includes a first valve and emergency operation valve, both of which are actuated by a shared solenoid. The emergency operation valve carries out a relative movement relative to the first valve when passing from the emergency operation position into normal operation. A magnetic flux guiding element is arranged in the magnetic flux between the first valve and the emergency operation valve and determines the magnetic flux for the emergency operation valve and for the first valve. | 2010-10-07 |
20100252767 | Externally mounted mechanical valve shutoff device with timer - An externally mounted mechanical device for mechanically closing a pressurized tank or cylinder valve, such as a grill tank, is provided. The device comprises a securing mechanism, a rotatable mechanism having a handle recess to receive a handle of pressurized tank or cylinder valve, and a torsional spring, wherein the torsional spring is configured to store potential torsional force and then release the torsional force by way of a timed release mechanism. The mechanical device comprises a securing device for securing the mechanical device to a tank or cylinder. Torsional force may be stored in torsional spring by way of a ratchet and pawl that also is configured to release the stored torsional force by way of a timed release. | 2010-10-07 |
20100252768 | CONTROL VALVE TRIM - Provided is a control valve trim, including a plug having a plurality of sections arranged in series along a longitudinal axis, wherein each of the plurality of sections has a diameter that is greater than the diameter of the preceding section, and a plurality of slots in the surface of each of the plurality of sections, and a liner, wherein the plug is disposed internal to the liner. | 2010-10-07 |
20100252769 | PLUNGER FOR A SOLENOID VALVE AND A METHOD FOR LABELING PLUNGERS FOR SOLENOID VALVES - The invention relates to a plunger for a solenoid valve having a plunger shaft, a closure element, and a sealing element, and a method for labeling plungers for solenoid valves. According to the invention, at least one permanent mark is applied by means of machining, allowing the association of the corresponding plunger to a specific type of plunger from a plurality of various types of plungers. | 2010-10-07 |
20100252770 | REDUNDANT METAL-TO-METAL SEALS FOR USE WITH INTERNAL VALVES - Redundant metal-to-metal seals for use with internal valves are described. A plug having redundant sealing functionality for use with a poppet of an internal valve includes a tapered surface to sealingly engage a seat of the poppet. Additionally, the plug includes a seal adjacent the tapered surface and disposed in a groove defined by the plug to sealingly engage the seat. | 2010-10-07 |
20100252771 | MINERAL FIBRE SIZING COMPOSITION CONTAINING A CARBOXYLIC POLYACID AND A POLYAMINE, PREPARATION METHOD THEREOF AND RESULTING PRODUCTS - The invention relates to a sizing composition intended to be applied to mineral fibers, especially glass or rock fibers, which contains at least one polycarboxylic acid and at least one polyamine. | 2010-10-07 |
20100252772 | PROCESS FOR LUBRICATING A REFRIGERATOR CONTAINING SLIDING PARTS MADE OF AN ENGINEERING PLASTIC MATERIAL - A process to lubricate a refrigerator preferably having a sliding portion which is made of an engineering plastic material, or provided thereon with an organic coating film or an inorganic coating film is provided. The process includes contacting sliding parts of the refrigerator with a refrigerating machine oil composition having a base oil containing a polyvinyl ether and/or a polyoxyalkylene glycol derivative as a main component and having a kinematic viscosity of 1 to 8 mm | 2010-10-07 |
20100252773 | REFRIGERATOR OIL - Provided is a refrigerating machine oil which contains a base oil mainly containing at least one substance selected from the group consisting of a mineral oil, a synthetic alicyclic hydrocarbon compound, and a synthetic aromatic hydrocarbon compound and having a kinematic viscosity at 40° C. of 1 to 8 mm | 2010-10-07 |
20100252774 | CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION, METHOD OF PREPARING THE SAME, CHEMICAL MECHANICAL POLISHING AQUEOUS DISPERSION PREPARATION KIT, AND CHEMICAL MECHANICAL POLISHING METHOD - A chemical mechanical polishing aqueous dispersion that is used to polish a polishing target that includes a wiring layer that contains tungsten, the chemical mechanical polishing aqueous dispersion including: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica having an average particle diameter calculated from a specific surface area determined by the BET method of 10 to 60 nm, the content (M | 2010-10-07 |
20100252775 | METHOD FOR FORMING AN INDIUM CAP LAYER - An indium cap layer is formed by blanket depositing indium onto a surface of metallic interconnects separated by interlayer dielectric, and then selectively chemically etching the indium located on the interlayer dielectric leaving an indium cap layer. Etchants containing a strong acid are provided for selectively removing the indium. | 2010-10-07 |
20100252776 | METHODS, COMPOSITIONS, AND BURNER SYSTEMS FOR REDUCING EMISSIONS OF CARBON DIOXIDE GAS INTO THE ATMOSPHERE - A method of preparing an oxidant stream comprising: burning a combustion mixture comprising (a) one or more fuel composition and (b) oxidant comprising a first oxygen content of about 10 mole % or more and a first carbon dioxide (CO | 2010-10-07 |
20100252777 | LIQUID-CRYSTALLINE MEDIUM AND LIQUID-CRYSTAL DISPLAY - Disclosed are a dielectrically negative, liquid-crystalline medium which contains a (first) dielectrically negative component (component A), which contains one or more dielectrically negative compounds of formula I | 2010-10-07 |
20100252778 | NOVEL NANOPARTICLE PHOSPHOR - An object of the present invention is to reduce the incompleteness of the surface state due to lattice constant and steric hindrance, which was heretofore nearly unavoidable, in the surface treatment of light-emitting semiconductor nanoparticles. The present invention provides an excellent luminescent material that has enhanced photoluminescence efficiency, reduced photoluminescence spectrum width, and increased chemical resistance. Specifically, the present invention provides a luminescent material comprising semiconductor nanoparticles having a mean particle size of 2 to 12 nm and a band gap of 3.8 eV or less, each of the semiconductor nanoparticles being coated with a silicon-containing layer, the semiconductor nanoparticles in the luminescent material having a peak emission wavelength 20 nm or more towards the longer-wavelength side than the peak emission wavelength of the semiconductor nanoparticles alone. | 2010-10-07 |
20100252779 | COPPER BROMIDE HUMIDITY INDICATING CARD - The present invention comprises a method of humidity indication comprising providing a substrate and an area of humidity indication comprising copper bromide, bromide salt, a dye, and cellulose fiber. In another embodiment of the invention, the invention comprises a humidity indicator array comprising a substrate having a plurality of areas of humidity indication on the substrate, wherein each area comprises copper bromide, dye, and bromide salt, wherein the mole ratio of bromide ions to copper ions in the area is about 7.5:1. | 2010-10-07 |
20100252780 | POLYTHIENYLENEVINYLENE THERMOELECTRIC CONVERSION MATERIAL - A thermoelectric conversion device including a thermoelectric conversion material including a polythienylenevinylene including units represented by formula (1), wherein R1 and R2 are each independently a hydrogen atom, or an alkoxy or alkyl group, and the thermoelectric conversion material is doped with a dopant. | 2010-10-07 |
20100252781 | GRAIN CLASSIFYING DEVICE AND ADHESIVE CONTAINING GRAINS CLASSIFIED BY THE DEVICE - A grain classifying device for accurately classifying the grains of uniform length, and an adhesive containing grains classified by the device and capable of connecting electrodes under a low pressure and being applicable to electrodes arranged in fine pitches. The grain classifying device ( | 2010-10-07 |
20100252782 | CONDUCTIVE POLYMER SOLUTION, CONDUCTIVE COATING FILM, AND INPUT DEVICE - The conductive polymer solution of the present invention contains a π-conjugated conductive polymer, polyanions and a solvent, at least one of specific metal ions, silver halide, conductive carbon black and conductive metal oxide particles, and a reducing agent and/or neutralizing agent as necessary. The conductive polymer solution of the present invention can be used a conductive coating film having both superior transparency and being suitable for use a transparent electrode of a touch panel electrode sheet. In addition, the conductive coating film of the present invention has superior transparency that enables it to be used as a transparent electrode of a touch panel electrode sheet. | 2010-10-07 |
20100252783 | AMBIENT-CURABLE ANISOTROPIC CONDUCTIVE ADHESIVE - Compositions of ambient-curable anisotropic conductive adhesive comprising an ambient-curable epoxy resin system and a conductive powder are proposed. It can be cured under ambient conditions using common magnet for clamping mechanism. This greatly simplifies many electronic repairs or Do-It-Yourself types of application. This anisotropic conductive adhesive can also be applied using traditional hot-bar laminator, but at lowered temperatures, and this is bound to open up new application possibilities. | 2010-10-07 |
20100252784 | PROCESS FOR PREPARING SILVER-CONTAINING AQUEOUS FORMULATION USEFUL FOR ELECTRICALLY CONDUCTIVE OR REFLECTIVE COATINGS - Process for preparing A silver-containing, disperse, water-containing formulation useful for producing electrically conductive and/or optically reflective coatings, which comprises (i) reacting a silver salt solution with a solution containing hydroxide ions, wherein at least one of said solutions comprises a polymeric dispersant, to produce an Ag | 2010-10-07 |
20100252785 | ITO POWDER AND METHOD OF PRODUCING THE SAME, COATING MATERIAL FOR TRANSPARENT CONDUCTIVE MATERIAL, AND TRANSPARENT CONDUCTIVE FILM - ITO particles are provided, which are small in variations of particle diameters and used for an ITO coating material capable of forming a transparent conductive film having high transparency and low haze value. Also, ITO coating material is provided, containing such ITO particles, and a transparent conductive film containing such ITO particles. Further, ITO powders are provided, wherein 90% or more of ITO particles constituting the ITO powders have a primary particle diameter of 20 nm or less. | 2010-10-07 |
20100252786 | CELLULOSE ESTER FILM, METHOD OF MANUFACTURING THE SAME, POLARIZING PLATE AND LIQUID CRYSTAL DISPLAY - An object of this invention is to provide a cellulose ester film which satisfies the requirement 0.952010-10-07 | |
20100252787 | High Visible/Infrared Transmittance Glass Composition - A flat glass panel for use in applications requiring high visible and infrared transmittance (such as a solar panel) is made using lower cost batch materials containing iron oxide impurities. Iron oxide is known as an additive for decreasing infrared/visible transmittance of glass. Removal of iron oxide impurities from batch materials is very expensive. This invention uses common batch materials having iron oxide impurities to produce a glass with high transmittance by adding a clarifier comprised of 0.05 to 0.4 weight percent of manganese dioxide (MnO | 2010-10-07 |
20100252788 | Vehicle leveling device - A leveling device for vehicle wheels comprising a first integral planar member for mating with one or more additional integral planar members of substantially the same shape and dimension in releasable relationship. All integral members have four sides and an upper surface divided into a plurality of vertically projecting rows of pins with a row of projections situated up front. The bottom surface of each of the integral planar members include rows of sockets, each of which is conformable in shape and size to receive an individual pin in releasable frictional engagement. Each planar member also includes one partially beveled side with a sloped projection with one or more openings conformable to the shape and dimensions of the individual pins. Two or more integral planar members are adapted to stack one upon the other by mating pins and sockets of respective planar members so that the sloped projections overlap one another and are positioned in parallel relation. The sloped projections of stacked planar members may also be disposed in a laterally offset relation. Both embodiments enable substantial alignment of the inclined planes to facilitate movement of a vehicle wheel up on to the surface of the device and back down. | 2010-10-07 |
20100252789 | BALL SCREW DEVICE - In a ball screw device, a ball screw linear-movement member is screwed with a ball screw rotary member and configured to linearly move in accordance with a relative rotation with the ball screw rotary member. A housing is holding the ball screw rotary member. A motor is disposed in a motor chamber of the housing, and configured to rotate the ball screw rotary member with a rotor coupled to the ball screw rotary member. A stopper is configured to collide with a brake when an amount of a relative linear movement between the ball screw rotary member and the ball screw linear-movement member becomes no less than a prescribed amount. The brake is configured to decelerate rotation of the rotor by the collision of the stopper with respect to the brake. | 2010-10-07 |
20100252790 | AUTOMATED RAIL JACK - The present invention relates to an automated jacking system for a motor vehicle that includes: a motorized jack; a rail system, where the rail system provides a means of movement for the motorized jack; and a control means, where the control means controls the movement of the motorized jack about the rail system. In one exemplary embodiment, the control means includes a control panel where the control panel includes at least four control buttons and each button coincides with a position of the motorized jack. During use, the rail system installs to the under carriage of a vehicle and includes a format that enables the motorized jack to position adjacent to a wheel of the vehicle. The present invention also includes a method of installing an automated jacking system to a motor vehicle. | 2010-10-07 |
20100252791 | JACK ASSEMBLY WITH INTEGRATED PRESSURE RELIEF ASSEMBLY - A jack assembly comprises a cylinder defining an interior, a piston having a piston head slideably engaged with the interior of the cylinder, an extension chamber defined between the piston head and the interior, and a pressure relief assembly integrated proximate the piston head and defining a relief passageway in selective fluid communication with the extension chamber. When a fluid pressure in the extension chamber exceeds a certain level, the pressure relief assembly allows fluid to flow through the relief passageway. In one form, the pressure relief assembly comprises a valve body, a relief passageway defined within the valve body, a valve seat formed along the relief passageway, a plug configured to selectively engage the valve seat, an adjustment member moveable along the relief passageway, and a biasing member captured between the plug and the adjustment member to urge the plug toward the valve seat. | 2010-10-07 |
20100252792 | HANDRAIL ASSEMBLY - A handrail assembly configured for grasping by a. pedestrian is provided and included a railing formed from an extruded metal such as aluminum. The railing includes an integrally formed channel running a length thereof within the interior of the railing. The channel includes a threaded portion for receiving a fastener for mounting the handrail assembly to a mounting assembly for interconnection to a wall. The mounting assembly includes a fastener secured within a bracket post that extends downwardly from the railing of the handrail assembly. The fastener of the bracket post is self-threaded onto the railing through a pilot hole drilled into the bottom surface of the railing. The bracket post is coupled to a bracket by way of a fastener to thereby mount the bracket to a wall so as to secure the handrail assembly to the wall. | 2010-10-07 |
20100252793 | FENCE RAIL WITH CONCEALED FASTENER - A fence rail includes a detachable fastener cover that covers and conceals a fastener chamber. Through the use of a knuckle and a catch fastening system, moisture is prevented from entering the fastener chamber. The fastener chamber allows for securing pickets to the rail using a means for fastening as close to the top of the rail as possible thereby allowing for significant racking of the fence. | 2010-10-07 |
20100252794 | COMPOSITE FILM FOR PHASE CHANGE MEMORY DEVICES - A phase change memory device and a method of manufacture are provided. The phase change memory device includes a phase change layer electrically coupled to a top electrode and a bottom electrode, the phase change layer comprising a phase change material. A mask layer is formed overlying the phase change layer. A first sealing layer is formed overlying the mask layer, and a second sealing layer is formed overlying the first sealing layer. | 2010-10-07 |
20100252795 | Phase change memory device - Provided is a phase change memory device and a method of manufacturing the phase change memory device. In the phase change memory device, since a flat surface of a buffer pattern and a lower electrode are stably in contact with each other in a center of a recess, a resistance of a contact surface between the lower electrode and the buffer pattern can be minimized and thereby the phase change memory device can be operated by a small current. Since a method of manufacturing the phase change memory device needs one time etching process to form a recess exposing a semiconductor substrate to an insulating layer until forming a lower electrode after forming a device isolation layer, it is very economical. | 2010-10-07 |
20100252796 | RESISTANCE CHANGE ELEMENT AND METHOD OF MANUFACTURING THE SAME - In a resistance change element (ReRAM) storing data by utilizing change in resistance of a resistance change element, the resistance change element is configured of a lower electrode made of a noble metal such as Pt, a transition metal film made of a transition metal such as Ni, a transition metal oxide film made of a transition metal oxide such as NiOx, and a lower electrode made of a noble metal such as Pt. | 2010-10-07 |
20100252797 | NONVOLATILE MEMORY DEVICE - A nonvolatile memory device, includes: a memory layer having a resistance changeable by performing at least one selected from applying an electric field and providing a current, the memory layer having a first major surface and a second major surface opposite to the first major surface; a plurality of first electrodes provided on the first major surface; a second electrode provided on the second major surface; a probe electrode disposed to face the plurality of first electrodes, the probe electrode having a changeable relative positional relationship with the first electrodes; and a drive unit connected to the probe electrode and the second electrode to record information in the memory layer by causing at least one selected from applying the electric field and providing the current via the probe electrode to the memory layer between the second electrode and at least one of the plurality of first electrodes. | 2010-10-07 |
20100252798 | STORAGE ELEMENT, METHOD OF MANUFACTURING SAME, AND SEMICONDUCTOR STORAGE DEVICE - Disclosed herein is a storage element including: a first electrode; a second electrode formed in a position opposed to the first electrode; and a variable-resistance layer formed so as to be interposed between the first electrode and the second electrode. The first electrode is a tubular object, and is formed so as to be thicker on an opposite side from the variable-resistance layer than on a side of the variable-resistance layer. | 2010-10-07 |
20100252799 | APPARATUS OF MEMORY ARRAY USING FINFETS - A memory cell includes a FinFET select device and a memory element. In some embodiments a memory cell has a contact element coupled between a surface of the fin and the memory element. | 2010-10-07 |
20100252800 | NANOWIRE DEVICES FOR ENHANCING MOBILITY THROUGH STRESS ENGINEERING - A p-type semiconductor nanowire transistor is formed on the first semiconductor nanowire and an n-type semiconductor nanowire transistor is formed on the second semiconductor nanowire. The first and second semiconductor nanowires have a rectangular cross-sectional area with different width-to-height ratios. The type of semiconductor nanowires for each semiconductor nanowire transistor is selected such that top and bottom surfaces provide a greater on-current per unit width than sidewall surfaces in a semiconductor nanowire having a greater width-to-height ratio, while sidewall surfaces provide a greater on-current per unit width than top and bottom surfaces in the other semiconductor nanowire having a lesser width-to-height ratio. Different types of stress-generating material layers may be formed on the first and second semiconductor nanowire transistors to provide opposite types of stress, which may be employed to enhance the on-current of the first and second semiconductor nanowire transistors. | 2010-10-07 |
20100252801 | SEMICONDUCTOR NANOWIRE WITH BUILT-IN STRESS - A semiconductor nanowire having two semiconductor pads on both ends is suspended over a substrate. Stress-generating liner portions are formed over the two semiconductor pads, while a middle portion of the semiconductor nanowire is exposed. A gate dielectric and a gate electrode are formed over the middle portion of the semiconductor nanowire while the semiconductor nanowire is under longitudinal stress due to the stress-generating liner portions. The middle portion of the semiconductor nanowire is under a built-in inherent longitudinal stress after removal of the stress-generating liners because the formation of the gate dielectric and the gate electrode locks in the strained state of the semiconductor nanowire. Source and drain regions are formed in the semiconductor pads to provide a semiconductor nanowire transistor. A middle-of-line (MOL) dielectric layer may be formed directly on the source and drain pads. | 2010-10-07 |
20100252802 | SEMICONDUCTOR ELEMENT - This invention provides a semiconductor element which uses a plurality of carbon nanotubes as a current path, can reduce contact resistance of its electrode contact part, and has excellent electrical characteristics. This semiconductor element is characterized in that the semiconductor element includes a current path ( | 2010-10-07 |
20100252803 | THIN FILM TRANSISTOR HAVING A NANO SEMICONDUCTOR SHEET AND METHOD OF MANUFACTURING THE SAME - Provided are a nano semiconductor sheet, a thin film transistor (TFT) using the nano semiconductor sheet, and a flat panel display using nano semiconductor sheet. The nano semiconductor sheet has excellent characteristics, can be manufactured at room temperature, and has good flexibility. The nano semiconductor sheet includes: a first film and a second film disposed on at least one side of or inside of the first film, and includes a plurality of nano particles arranged substantially in parallel to each other. In addition, provided are a method of manufacturing a nano semiconductor sheet and methods of manufacturing a TFT and a flat panel display using the nano semiconductor sheet. The method of manufacturing a nano semiconductor sheet, includes: forming first polymer micro-fibers having a plurality of nano particles arranged substantially in parallel; preparing a first film; and arranging a plurality of the first micro-fibers on at least one side of or inside of the first film. | 2010-10-07 |
20100252804 | CATHODE ASSEMBLY CONTAINING AN ULTRAVIOLET LIGHT-BLOCKING DIELECTRIC LAYER - A field emission cathode assembly that has a UV-blocking, insulating dielectric layer ( | 2010-10-07 |
20100252805 | GaN Nanorod Arrays Formed by Ion Beam Implantation - A method of preparing nanorod arrays using ion beam implantation is described that includes defining a pattern on a substrate and then implanting ions into the substrate using ion beam implantation. Next, a thin film is deposited on the substrate. During film growth, nanotrenches form and catalyze the formation of nanorods through capillary condensation. The resulting nanorods are aligned with the supporting matrix and are free from lattice and thermal strain effect. The density, size, and aspect ratios of the nanorods can be varied by changing the ion beam implantation and thin film growth conditions resulting in control of emission efficiency. | 2010-10-07 |
20100252806 | CARBON NANO-TUBE (CNT) LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed are a carbon nano-tube (CNT) light emitting device and a method of manufacturing the same. Specifically, the CNT light emitting device comprises: a CNT thin film formed using a CNT dispersed solution; a n-doping polymer formed on one end of the CNT thin film; a p-doping polymer formed on the other end of the CNT thin film; and a light emitting part between the n-doping polymer and the p-doping polymer. In addition, the method of manufacturing a CNT light emitting device comprises steps of: mixing CNTs with a dispersing agent or dispersing solvent to prepare a CNT dispersed solution; forming a CNT thin film using the CNT dispersed solution; coating a n-doping polymer on one end of the CNT thin film; and coating a p-doping polymer on the other end of the CNT thin film. According to the invention, the n-doping polymer and the p-doping polymer are respectively coated on the CNT having a CNT random network structure to implement a p-n junction, thereby implementing a light emitting device in a simple and low-priced process. | 2010-10-07 |
20100252807 | Metal ion sensor and fabricating method thereof - A metal ion sensor is provided. The metal ion sensor includes a nanoparticle core doped with a first luminescent material and a shell enclosing the nanoparticle core. The shell includes a second luminescent material and binding sites of outer metal ions. The first luminescent material and the second luminescent material emit light with mutually different colors when excited by an excitation source. The luminescence intensity of the light emitted from the second luminescent material varies in accordance with the binding amount of the outer metal ions, such that the emission color of the combined luminescence of the first luminescent material and the second luminescent material is changed. | 2010-10-07 |
20100252808 | NANOWIRE GROWTH ON DISSIMILAR MATERIAL - The present invention relates to growth of III-V semiconductor nanowires ( | 2010-10-07 |
20100252809 | LIGHT EMITTING ELEMENT ARRAY AND IMAGE FORMING APPARATUS - A light emitting element array including an active layer commonly used for light emitting element regions, carrier injection layers which are electrically isolated from each other and which are provided in the respective light emitting element regions, and a resistive layer which has a resistance higher than that of the carrier injection layers and which is provided between the active layer and the carrier injection layers. | 2010-10-07 |
20100252810 | GATE PATTERNING OF NANO-CHANNEL DEVICES - Methodologies and gate etching processes are presented to enable the fabrication of gate conductors of semiconductor devices, such as NFETs and/or PFETs, which are equipped with nano-channels. In one embodiment, a sacrificial spacer of equivalent thickness to the diameter of the gate nano-channel is employed and is deposited after patterning the gate conductor down to the gate dielectric. The residue gate material that is beneath the nano-channel is removed utilizing a medium to high density, bias-free, fluorine-containing or fluorine- and chlorine-containing isotropic etch process without compromising the integrity of the gate. In another embodiment, an encapsulation/passivation layer is utilized. In yet further embodiment, no sacrificial spacer or encapsulation/passivation layer is used and gate etching is performed in an oxygen and nitrogen-free ambient. | 2010-10-07 |
20100252811 | Nitride semiconductor device - In the nitride semiconductor device of the present invention, an active layer | 2010-10-07 |
20100252812 | Methods of forming carbon nanotube transistors for high speed circuit operation and structures formed thereby - Methods and associated structures of forming a microelectronic device are described. Those methods may comprise forming a channel region on a substrate, wherein the channel region comprises at least one CNT, forming at least one source/drain region adjacent the channel region, and then forming a gate electrode on the channel region, wherein a width of the gate electrode comprises about 50 percent to about 90 percent of a width of the contact region. | 2010-10-07 |
20100252813 | Core-Shell-Shell Nanowire Transistor And Fabrication Method - A fabrication method is provided for a core-shell-shell (CSS) nanowire transistor (NWT). The method provides a cylindrical CSS nanostructure with a semiconductor core, an insulator shell, and a conductive shell. The CSS nanostructure has a lower hemicylinder overlying a substrate surface. A first insulating film is conformally deposited overlying the CSS nanostructure and anisotropically plasma etched. Insulating reentrant stringers are formed adjacent the nanostructure lower hemicylinder. A conductive film is conformally deposited and selected regions are anisotropically plasma etched, forming conductive film gate straps overlying a gate electrode in a center section of the CSS nanostructure. An isotropically etching removes the insulating reentrant stringers adjacent the center section of the CSS nanostructure, and an isotropically etching of the conductive shell overlying the S/D regions is performed. A screen oxide layer is deposited over the CSS nanostructure. The source/drain (S/D) regions in end sections of the CS nanostructure flanking are doped. | 2010-10-07 |
20100252814 | SEMICONDUCTOR NANOWIRES HAVING MOBILITY-OPTIMIZED ORIENTATIONS - Prototype semiconductor structures each including a semiconductor link portion and two adjoined pad portions are formed by lithographic patterning of a semiconductor layer on a dielectric material layer. The sidewalls of the semiconductor link portions are oriented to maximize hole mobility for a first-type semiconductor structures, and to maximize electron mobility for a second-type semiconductor structures. Thinning by oxidation of the semiconductor structures reduces the width of the semiconductor link portions at different rates for different crystallographic orientations. The widths of the semiconductor link portions are predetermined so that the different amount of thinning on the sidewalls of the semiconductor link portions result in target sublithographic dimensions for the resulting semiconductor nanowires after thinning. By compensating for different thinning rates for different crystallographic surfaces, semiconductor nanowires having optimal sublithographic widths may be formed for different crystallographic orientations without excessive thinning or insufficient thinning. | 2010-10-07 |
20100252815 | STRUCTURALLY STABILIZED SEMICONDUCTOR NANOWIRE - In one embodiment, a semiconductor nanowire having a monotonically increasing width with distance from a middle portion toward adjoining semiconductor pads is provided. A semiconductor link portion having tapered end portions is lithographically patterned. During the thinning process that forms a semiconductor nanowire, the taper at the end portions of the semiconductor nanowire provides enhanced mechanical strength to prevent structural buckling or bending. In another embodiment, a semiconductor nanowire having bulge portions are formed by preventing the thinning of a semiconductor link portion at pre-selected positions. The bulge portions having a greater width than a middle portion of the semiconductor nanowire provides enhanced mechanical strength during thinning of the semiconductor link portion so that structural damage to the semiconductor nanowire is avoided during thinning. | 2010-10-07 |
20100252816 | High-Mobility Multiple-Gate Transistor with Improved On-to-Off Current Ratio - A multi-gate transistor includes a semiconductor fin over a substrate. The semiconductor fin includes a central fin formed of a first semiconductor material; and a semiconductor layer having a first portion and a second portion on opposite sidewalls of the central fin. The semiconductor layer includes a second semiconductor material different from the first semiconductor material. The multi-gate transistor further includes a gate electrode wrapping around sidewalls of the semiconductor fin; and a source region and a drain region on opposite ends of the semiconductor fin. Each of the central fin and the semiconductor layer extends from the source region to the drain region. | 2010-10-07 |
20100252817 | New Anthracene Derivatives, Preparation Method Thereof and Organic Light Emitting Diode Using the Same - The present invention provides a novel anthracene derivative, a method for preparing the same, and an organic electronic device using the same. The anthracene derivative according to the invention can function alone as a light emitting host, in particular, as a blue host in an organic electronic device. Further, the anthracene derivative according to the invention can also function as a hole injecting or hole transporting material, an electron injecting or electron transporting material, or a light emitting material in an organic electronic device including a light emitting device. Therefore, the organic electronic device according to the present invention shows excellent characteristics in efficiency, drive voltage and stability. | 2010-10-07 |
20100252818 | PHOSPHAPHENANTHRENE COMPOUNDS AND ORGANIC LIGHT EMITTING DIODE USING THE SAME - The present invention relates to new phosphaphenanthrene compounds with excellent light emitting property and an organic light emitting diode (OLED) using the same. | 2010-10-07 |
20100252819 | ELECTROACTIVE MATERIALS - A compound having at least two diarylamino moieties and at least 10% deuteration. | 2010-10-07 |
20100252820 | LIGHT EMITTING CU (I) COMPLEXES - Electroneutral metal complexes of the formula L Cu A, wherein L stands for an, especially bidentate, neutral ligand and A stands for an, especially bidentate, monoanionic ligand binding to Cu by at least one heteroatom selected from N, P, S; or wherein the ligands L and A with the above features are interconnected by at least one chemical bond to form one common tetradentate ligand; or protonated or alkylated forms or salts thereof show good light emitting efficiency in electroluminescent applications. | 2010-10-07 |
20100252821 | MULTILAYER POLYMER ELECTROLUMINESCENT DEVICE COMPRISING WATER-SOLUBLE POLYMER LAYER CONTAINING CATIONS AND METHOD FOR FABRICATING THE SAME - A polymer electroluminescent device is provided. The device comprises an anode, a light-emitting layer, a cation-containing water-soluble polymer layer and a cathode formed in this order on a substrate wherein the cation-containing water-soluble polymer layer is formed by wet coating. The cation-containing water-soluble polymer layer as a secondary thin film layer is not dissolved in a solvent for the formation of the underlying light-emitting layer to prevent intermixing between the two layers, thereby enabling the formation of a multilayer structure by wet coating. In addition, the cation-containing water-soluble polymer layer attracts electrons injection from the cathode by an attractive Coulomb force to effectively increase the mobility of the electrons while blocking high-mobility holes from the anode at an interface between the light-emitting layer and the water-soluble layer. Further provided is a method for fabricating the electroluminescent device. | 2010-10-07 |
20100252822 | PHOSPHORESCENT POLYMER COMPOUND AND ORGANIC ELECTROLUMINESCENCE DEVICE USING THE SAME - Phosphorescent polymer compounds of the invention have high light-emitting efficiency and long luminescent life. Organic electroluminescence devices have the phosphorescent polymer compounds. | 2010-10-07 |
20100252823 | ORGANIC ELECTROLUMINESCENT DEVICE AND DISPLAY APPARATUS - An organic electroluminescent device includes an anode; a cathode; an organic layer including a light-emitting layer and disposed between the anode and the cathode; and an electron transport layer constituting the organic layer, disposed between the cathode and the light-emitting layer, and having a stacked structure including a layer containing a benzimidazole derivative and a layer containing a dibenzimidazole derivative represented by general formula ( | 2010-10-07 |
20100252824 | Hybrid Molecular Electronic Devices Containing Molecule-Functionalized Surfaces for Switching, Memory, and Sensor Applications and Methods for Fabricating Same - This invention is generally related to a method of making a molecule-surface interface comprising at least one surface comprising at least one material and at least one organic group wherein the organic group is adjoined to the surface and the method comprises contacting at least one organic group precursor with at least one surface wherein the organic group precursor is capable of reacting with the surface in a manner sufficient to adjoin the organic group and the surface. The present invention is directed to hybrid molecular electronic devices having a molecule-surface interface. Such hybrid molecular electronic devices may advantageously have either a top or bottom gate electrode for modifying a conductivity of the devices. | 2010-10-07 |
20100252825 | Light-Emitting Device and Electronic Devices - The present invention provides a lightweight, thin light-emitting device having a new structure which has a plurality of display screens. Further, the invention provides a dual emission type display device which can perform a pure black display and can achieve high contrast. According to the invention, at least, both electrodes of a light-emitting element (an anode and a cathode of a light-emitting element) are highly light-transmitting at the same level, and a polarizing plate or a circularly polarizing plate is provided, thereby conducting a pure black display that is a state of no light-emission and enhancing the contrast. Moreover, unevenness of color tones in displays of the both sides, which is a problem of a full-color dual emission type display device structure, can be solved according to the invention. | 2010-10-07 |
20100252826 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. The increase in the numbers of gate lines and signal lines makes it difficult to mount an IC chip having a driver circuit for driving the gate line and the signal line by bonding or the like, which causes an increase in manufacturing costs. A pixel portion and a driver circuit driving the pixel portion are provided over the same substrate. The pixel portion and at least a part of the driver circuit are formed using thin film transistors in each of which an oxide semiconductor is used. Both the pixel portion and the driver circuit are provided over the same substrate, whereby manufacturing costs are reduced. | 2010-10-07 |
20100252827 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a thin film transistor including an oxide semiconductor layer, in which the contact resistance between the oxide semiconductor layer and source and drain electrode layers is reduced and whose electric characteristics are stabilized. Another object is to provide a method for manufacturing the thin film transistor. The thin film transistor including an oxide semiconductor layer is formed in such a manner that buffer layers whose conductivity is higher than that of the oxide semiconductor layer are formed and the oxide semiconductor layer and the source and drain electrode layers are electrically connected to each other through the buffer layers. In addition, the buffer layers whose conductivity is higher than that of the oxide semiconductor layer are subjected to reverse sputtering treatment and heat treatment in a nitrogen atmosphere. | 2010-10-07 |
20100252828 | SEMICONDUCTOR DEVICE COMPRISING A CHIP INTERNAL ELECTRICAL TEST STRUCTURE ALLOWING ELECTRICAL MEASUREMENTS DURING THE FABRICATION PROCESS - A test structure or a circuit element acting temporarily as a test structure may be provided within the die region of sophisticated semiconductor devices, while probe pads may be located in the frame in order to not unduly consume valuable die area. The electrical connection between the test structure and the probe pads may be established by a conductive path including a buried portion, which extends from the die region into the frame below a die seal, thereby maintaining the electrical and mechanical characteristics of the die seal. Hence, enhanced availability of electrical measurement data and superior authenticity of the data may be accomplished, wherein the measurement data may be obtained during the production process. | 2010-10-07 |
20100252829 | SEMICONDUCTOR DEVICE, CIRCUIT SUBSTRATE, ELECTRO-OPTIC DEVICE AND ELECTRONIC APPARATUS - A semiconductor device in the first embodiment includes: an electrode pad and a resin projection, formed on an active surface; a conductive film deposited from a surface of the electrode pad to a surface of the resin projection; a resin bump formed with the resin projection and with the conductive film. The semiconductor device is conductively connected to the opposing substrate through the resin bump electrode. The testing electrode is formed with the conductive film that is extended and applied to the opposite side of the electrode pad across the resin projection. | 2010-10-07 |
20100252830 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A first external connection terminal at a first row is disposed to position at upside of a first I/O cell, and a second external connection terminal at a second row is formed at upside of a boundary portion between two adjacent first I/O cells. Here, the first external connection terminal and the second external connection terminal are disposed to be separated for a predetermined distance so as not to have an overlapped portion with each other, and formed in an identical layer. According to the constitution, it is possible to prevent disadvantages such as characteristic deterioration of a semiconductor integrated circuit and accuracy deterioration of an electrical inspection. | 2010-10-07 |
20100252831 | SQUARE PILLAR-SHAPED SWITCHING ELEMENT FOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A switching element for a memory device includes a base layer including a plurality of line-type trenches. First insulation patterns are formed on the base layer excluding the trenches. First diode portions are formed on the bottoms of the trenches in the form of a thin film. Second insulation patterns are formed on the first diode portions and are spaced apart from each other to form holes in the trenches having the first diode portions provided therein. Square pillar-shaped second diode portions are formed in the holes over the first diode portions. | 2010-10-07 |
20100252832 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a thin film transistor using an oxide semiconductor layer, in which contact resistance between the oxide semiconductor layer and source and drain electrode layers is reduced and electric characteristics are stabilized. The thin film transistor is formed in such a manner that a buffer layer including a high-resistance region and low-resistance regions is formed over an oxide semiconductor layer, and the oxide semiconductor layer and source and drain electrode layers are in contact with each other with the low-resistance region of the buffer layer interposed therebetween. | 2010-10-07 |
20100252833 | THIN FILM TRANSISTOR DEVICES HAVING TRANSISTORS WITH DIFFERENT ELECTRICAL CHARACTERISTICS AND METHOD FOR FABRICATING THE SAME - A system for displaying images is provided. The system includes a thin film transistor (TFT) device comprising a substrate having a pixel region, a driving thin film transistor and a switching thin film transistor. The driving thin film transistor and the switching thin film transistor are disposed on the substrate and in the pixel region. The driving thin film transistor includes a polysilicon active layer and the switching thin film transistor includes an amorphous silicon active layer. A method for fabricating the system for displaying images including the TFT device is also disclosed. | 2010-10-07 |
20100252834 | METHOD FOR GROWING GROUP III-V NITRIDE FILM AND STRUCTURE THEREOF - A method for growing a Group III-V nitride film and a structure thereof are presented. The method is carried out by hydride vapor phase epitaxy (HVPE). The method includes the steps of, inter alia, slowly epitaxially growing a temperature ramping nitride layer on a substrate by rising a first growth temperature of 900-950° C. to a second growth temperature of 1000-1050° C. at a temperature-rising rate of 0.5-10° C./min. The lattice quality of the temperature ramping nitride layer is slowly transformed with the layer height, so that a stress induced by lattice mismatch between a sapphire substrate and a gallium nitride (GaN) layer is relieved. | 2010-10-07 |
20100252835 | NITRIDE SEMICONDUCTOR AND NITRIDE SEMICONDUCTOR CRYSTAL GROWTH METHOD - A base at least one principal plane of which is a nitride is prepared for use in epitaxial growth. The base is placed on a susceptor in an epitaxial growth reactor and heated to a predetermined temperature (step A). The heating is started with inactive, nitrogen gas being supplied into the reactor. Then, active, NH | 2010-10-07 |
20100252836 | GROUP-III NITRIDE STRUCTURE AND METHOD FOR PRODUCING A GROUP-III NITRIDE STRUCTURE - A group-III nitride structure includes a substrate | 2010-10-07 |
20100252837 | METHOD FOR PRODUCING SINGLE CRYSTAL SiC SUBSTRATE AND SINGLE CRYSTAL SiC SUBSTRATE PRODUCED BY THE SAME - A single crystal SiC substrate is produced with low cost in which a polycrystalline SiC substrate with relatively low cost is used as a base material substrate where the single crystal SiC substrate has less strain, good crystallinity and large size. The method including a P-type ion introduction step for implanting P-type ions from a side of a surface Si layer | 2010-10-07 |
20100252838 | Semiconductor device and method of manufacturing the same - A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide semiconductor substrate in an ohmic contact and composed of a metal material whose silicide formation free energy and carbide formation free energy respectively take negative values. The ohmic metal layer is composed of, for example, a metal material such as molybdenum, titanium, chromium, manganese, zirconium, tantalum, or tungsten. | 2010-10-07 |
20100252839 | DISPLAY AND METHOD OF MANUFACTURING THE SAME - A display includes: a light-emitting element formed by laminating a first electrode layer, an organic layer including a light-emitting layer and a second electrode layer in order on a base; and an auxiliary wiring layer being arranged so as to surround the organic layer and being electrically connected to the second electrode layer, in which the auxiliary wiring layer includes a two-layer configuration including a first conductive layer and a second conductive layer, the first conductive layer has lower contact resistance to the second electrode layer than that of the second conductive layer, the two-layer configuration in the auxiliary wiring layer is formed so that an end surface of the second conductive layer is recessed inward from an end surface of the first conductive layer, thereby a part of a top surface of the first conductive layer is in contact with the second electrode layer. | 2010-10-07 |
20100252840 | HIGH VOLTAGE LOW CURRENT SURFACE EMITTING LED - An LED chip comprising a plurality of sub-LEDs on a submount. Electrically conductive and electrically insulating features are included that serially interconnect the sub-LEDs such that an electrical signal applied to the serially interconnected sub-LEDs along the electrically conductive features spreads to the serially interconnected sub-LEDs. A via is included that is arranged to electrically couple one of the sub-LEDs to the submount. The sub-LED can be interconnected by more than one of the conductive features, with each one of the conductive features capable of spreading an electrical signal between the two of the sub-LEDs. | 2010-10-07 |
20100252841 | OLED DEVICE HAVING IMPROVED LIFETIME AND RESOLUTION - An organic light-emitting diode device, includes a plurality of first patterned electrodes that define a corresponding plurality of light-emitting areas, and one-or-more organic first light-emitting layer(s) formed over the first patterned electrodes. A plurality of second patterned electrodes are formed over the one-or-more first light-emitting layer(s) corresponding to the first patterned electrodes; and one or more organic second light-emitting layer(s) formed over the second patterned electrodes. A third electrode common to the plurality of light-emitting areas is formed over the one-or-more second light-emitting layer(s). Each of the second patterned electrodes is shared between the first and second light-emitting layers so that the first and second patterned electrodes provide current through the first light-emitting layer(s); and each of the second and third electrodes, within each of the plurality of light-emitting areas, provide current through the second light-emitting layer(s) independent of the current through the first light-emitting layer. | 2010-10-07 |
20100252842 | PACKAGE STRUCTURE OF LIGHT EMITTING DIODE FOR BACKLIGHT - A package structure of a light emitting diode for a backlight comprises a long-wavelength LED die and a short-wavelength LED die. The lights emitted from the two LED dies are mixed with the light emitted from excited fluorescent powders for serving as the backlight of a liquid crystal display. A partition plate is disposed between the two LED dies for separating them from each other. The effective light output of the package structure is increased because each of the two LED dies cannot absorb the light from the other. | 2010-10-07 |
20100252843 | LIGHT-EMITTING ELEMENT MOUNTING SUBSTRATE, LIGHT-EMITTING ELEMENT PACKAGE, DISPLAY DEVICE, AND ILLUMINATION DEVICE - A light emitting element mounting substrate that enables a high quality light emitting element package to be readily manufactured with minimal variations in the chromaticity when manufacturing a white LED, a light emitting element package that employs the substrate, and a display device and illumination device that employs this package, are provided. In the light emitting element mounting substrate, at least a light emitting element mounting portion of a surface of a core metal is coated with a fluorescent enamel layer that consists of a fluorescent material-containing glass. In the light emitting element package, a light emitting element is mounted on the light emitting element mounting substrate, and the light emitting element is sealed with a transparent sealing resin. | 2010-10-07 |
20100252844 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE - A nitride semiconductor light emitting diode includes at least an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer. The active layer is formed of one first nitride semiconductor layer having a highest In ratio in the light emitting diode. The light emitting diode further includes at least one of a second nitride semiconductor layer located between the active layer and the n-type nitride semiconductor layer and including an InGaN layer, and a third nitride semiconductor layer located between the active layer and the p-type nitride semiconductor layer and including an InGaN layer. Respective In (Indium) ratios of the InGaN layers included in the second nitride semiconductor layer and the InGaN layers included in the third nitride semiconductor layer are lower than the In ratio of the first nitride semiconductor layer forming the active layer. The LED with high luminous efficiency can thus be provided. | 2010-10-07 |
20100252845 | WHITE-LIGHT LIGHT EMITTING DIODE CHIPS AND FABRICATION METHODS THEREOF - A white-light LED chip and a fabrication method thereof are provided. The white-light LED chip comprises a blue-light LED chip and a phosphor layer directly disposed on a top surface of the blue-light LED chip. The method comprises providing a plurality of blue-light LED chips attached to a substrate, wherein at least one contact pad is formed on the top surface of each blue-light LED chip. A protective layer is formed on the contact pad. A phosphor layer is formed on the top surface of the blue-light LED chip by a molding process, exposing the contact pad. Finally, the protective layer and the substrate are removed from the blue-light LED chip to form a white-light LED chip. | 2010-10-07 |
20100252846 | BACKLIGHT INCLUDING SEMICONDUCTIOR LIGHT EMITTING DEVICES - A light source such as a semiconductor light emitting diode is positioned in a first opening in a transparent member, which may function as a waveguide in a display. The transparent member surrounds the light source. No light source is positioned in a second opening in the transparent member. In some embodiments, the first opening is shaped to direct light into the transparent member. In some embodiments, a reflector is positioned over the light source. The reflector includes a flat portion and a shaped portion. The shaped portion extends from the flat portion toward the light source. | 2010-10-07 |
20100252847 | RED LIGHT FLUORESCENT MATERIAL AND MANUFACTURING METHOD THEREOF, AND WHITE LIGHT LUMINESCENT DEVICE - A red light fluorescent material adapted for being excited by a first light to emit a red light is provided. The red light fluorescent material has the chemical formula (1) presented below, | 2010-10-07 |
20100252848 | METHOD FOR FORMING AN LED LENS STRUCTURE AND RELATED STRUCTURE - A method for manufacturing an LED lens structure includes the following steps of disposing a lead frame with the LED chip into a mold, and injecting thermoplastic transparent material to a plane of the lead frame which is different from a plane that LED chip is mounted thereon to form a lens structure corresponding to the LED chip. | 2010-10-07 |
20100252849 | Light-emitting element - A light-emitting element includes a semiconductor substrate, a light emitting layer portion including an active layer on the semiconductor substrate, a first reflective layer between the semiconductor substrate and the active layer for reflecting light emitted from the active layer; and a second reflective layer between the semiconductor substrate and the first reflective layer for reflecting light with a wavelength different from that of the light reflected by the first reflective layer. The second reflective layer reflects light with a wavelength longer than that of the light reflected by the first reflective layer. | 2010-10-07 |
20100252850 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises a multireflection layer comprising at least one of reflection layers of different refractive indices, a first conductive semiconductor layer on the multireflection layers, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. | 2010-10-07 |
20100252851 | LED PACKAGE WITH INCREASED FEATURE SIZES - A light emitter package having increased feature sizes for improved luminous flux and efficacy. An emitter chip is disposed on a submount with a lens that covers the emitter chip. In some cases, the ratio of the width of the light emitter chip to the width of said lens in a given direction is 0.5 or greater. Increased feature sizes allow the package to emit light more efficiently. Some packages include submounts having dimensions greater than 3.5 mm square used in conjunction with larger emitter chips. Materials having higher thermal conductivities are used to fabricate the submounts, providing the package with better thermal management. | 2010-10-07 |
20100252852 | COOLING BLOCK ASSEMBLY AND LED INCLUDING THE COOLING BLOCK - An LED includes a cooling block, an LED chip, two insulating layers, two electrically conductive layers and two gold wires. According to the invention, two open trenches are arranged by opening on the cooling block; the LED chip is fixed on a surface of the cooling block; the insulating layers are plated on inner walls of the trenches; the electrically conductive layers are plated on the insulating layers and are insulated from the cooling block; the gold wires are electrically conducted to the electrically conductive layers and the LED chip; since the insulating layers are only plated on parts, where the cooling block contacts the electrically conductive layers, the other parts of the cooling block are exposed, such that the cooling area is increased and the cooling performance is promoted; in addition, the invention is further to provide a cooling block assembly constituted by these cooling blocks. | 2010-10-07 |
20100252853 | Thermal Energy Dissipating Arrangement for a Light Emitting Diode - A thermal energy dissipating and LED mounting arrangement includes an LED and a thermally conductive sheet. The thermally conductive sheet has a top surface, a bottom surface and thickness therebetween defining an opening therethrough sized to receive therein the LED such that the thickness of the thermally energy dissipating medium defining the opening is in physical, thermally conductive contact with an exterior surface of the at least one side portion of the encapsulating material of the LED. The thickness defining the opening absorbs thermal energy generated within the LED as a result of current flow through the LED circuit, and the thermal energy dissipating medium rejects the absorbed thermal energy to an ambient environment surrounding the thermal energy dissipating medium through a surface area of the thermal energy dissipating medium defined by the combination of the top surface, the bottom surface and an outer periphery thereof. | 2010-10-07 |
20100252854 | Arrangement for Dissipating Thermal Energy Generated by a Light Emitting Diode - An arrangement for dissipating thermal energy generated by an LED includes an LED and a thermal energy dissipating medium. The LED includes an LED circuit, encapsulating material surrounding the LED circuit, and first and second electrical leads extending into the encapsulating material and electrically connected to the LED circuit. The thermal energy dissipating medium defines an opening therethrough sized to receive therein the LED such that the thermal energy dissipating medium defining the opening is in physical, thermally conductive contact with an exterior surface of at least one side portion of the encapsulating material of the LED. The thermal energy dissipating medium is not electrically connected to any of the LED circuit, the mounting surface, the first electrical lead and the second electrical lead. The thermal energy dissipating medium is formed of a material having a thermal conductivity of greater than or equal to 50 W/mK. | 2010-10-07 |