40th week of 2011 patent applcation highlights part 54 |
Patent application number | Title | Published |
20110244649 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes: a process to form an element isolation trench on a semiconductor substrate, the element isolation trench having a crystal plane orientation that is different from a crystal plane orientation on a surface of the semiconductor substrate; a process to deposit, on the semiconductor substrate, one of a metal that promotes generation of oxygen radicals and a metal containing film that promotes generation of the oxygen radicals; a process to oxidize the semiconductor substrate; and a process to remove the one of the metal and the metal containing film. | 2011-10-06 |
20110244650 | SEMICONDUCTOR DEVICE WITH STI AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor substrate having first and second areas; an STI isolation region being made of an isolation trench formed in the semiconductor substrate and an insulating film burying the isolation trench and defining a plurality of active regions in the first and second areas; a first structure formed on an area from the active region in the first area to a nearby STI isolation region and having a first height; and a second structure formed on an area from the active region in the second area to a nearby STI isolation region and having a second height, wherein the surface of the said STI isolation region in the first area is lower than the surface of said STI isolation region in the second area. | 2011-10-06 |
20110244651 | METHOD AND DEVICE FOR ALTERNATELY CONTACTING TWO WAFERS - A method and device for alternatively contacting two wafer-like component composite arrangements, in which two component composite arrangements, provided with contact metallizations on their opposing contact surfaces, are brought into a coverage position with their contact metallizations to form contact pairs, in which position the contact metallizations to be joined together are pressed against one another, the contact metalllizations being contacted by exposing the rear of one of the component composite arrangements to laser radiation, the wavelength of the laser radiation being selected as a function of the degree of absorption of the component composite arrangement, so that a transmission of the laser radiation through the component composite arrangement exposed to the laser radiation at the rear is essentially suppressed or an absorption of the laser radiation takes place essentially in the contact metallizations of one or both component composite arrangements. | 2011-10-06 |
20110244652 | METHOD OF MANUFACTURING SOI SUBSTRATE - An object of the present invention is to provide an SOI substrate including a semiconductor layer which is efficiently planarized. A method for manufacturing an SOI substrate includes a step of irradiating a bond substrate with an accelerated ion to form an embrittlement region; a step of bonding the bond substrate and the base substrate with an insulating layer positioned therebetween; a step of splitting the bond substrate at the embrittlement region to leave a semiconductor layer bonded to the base substrate; a step of disposing the semiconductor layer in front of a semiconductor target containing the same semiconductor material as the semiconductor layer; and a step of alternately irradiating the surface of the semiconductor layer and the semiconductor target with a rare gas ion, so that the surface of the semiconductor layer is planarized. | 2011-10-06 |
20110244653 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object of the present invention is to reduce the influence of a foreign substance adhering to a single crystalline semiconductor substrate and manufacture a semiconductor substrate with a high yield. Another object of the present invention is to manufacture, with a high yield, a semiconductor device which has stable characteristics. In the process of manufacturing a semiconductor substrate, when an embrittled region is to be formed in a single crystalline semiconductor substrate, the surface of the single crystalline semiconductor substrate is irradiated with hydrogen ions from oblique directions at multiple (at least two) different angles, thereby allowing the influence of a foreign substance adhering to the single crystalline semiconductor substrate to be reduced and allowing a semiconductor substrate including a uniform single crystalline semiconductor layer to be manufactured with a high yield. | 2011-10-06 |
20110244654 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE - A nitride-based semiconductor crystal and a second substrate are bonded together. In this state, impact is applied externally to separate the low-dislocation density region of the nitride-based semiconductor crystal along the hydrogen ion-implanted layer, thereby transferring (peeling off) the surface layer part of the low-dislocation density region onto the second substrate. At this time, the lower layer part of the low-dislocation density region stays on the first substrate without being transferred onto the second substrate. The second substrate onto which the surface layer part of the low-dislocation density region has been transferred is defined as a semiconductor substrate available by the manufacturing method of the present invention, and the first substrate on which the lower layer part of the low-dislocation density region stays is reused as a substrate for epitaxial growth. | 2011-10-06 |
20110244655 | METHOD FOR FABRICATING SOI SUBSTRATE - There is provided a method for manufacturing an SOI substrate capable of effectively and efficiently embrittling an interface of an ion-implanted layer without causing the separation of a bonded surface | 2011-10-06 |
20110244656 | INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF - It is an object of the present invention to improve a factor which influences productivity such as variation caused by a characteristic defect of a circuit by thinning or production yield when an integrated circuit device in which a substrate is thinned is manufactured. A stopper layer is formed over one surface of a substrate, and an element is formed over the stopper layer, and then, the substrate is thinned from the other surface thereof. A method in which a substrate is ground or polished or a method in which the substrate is etched by chemical reaction is used as a method for thinning or removing the substrate. | 2011-10-06 |
20110244657 | SEMICONDUCTOR DIE SINGULATION METHOD - In one embodiment, a method of singulating semiconductor die from a semiconductor wafer includes forming a material on a surface of a semiconductor wafer and reducing a thickness of portions of the material. Preferably, the thickness of the material is reduced near where singulation openings are to be formed in the semiconductor wafer. | 2011-10-06 |
20110244658 | Crack Stops for Semiconductor Devices - Crack stops for semiconductor devices, semiconductor devices, and methods of manufacturing semiconductor devices are disclosed. In one embodiment, a barrier structure for a semiconductor device includes a plurality of substantially V-shaped regions. Each of the plurality of substantially V-shaped regions is disposed adjacent another of the plurality of substantially V-shaped regions. | 2011-10-06 |
20110244659 | WAFER CUTTING METHOD AND A SYSTEM THEREOF - A method for cutting a semiconductor wafer by generating a crack within the wafer, and a system thereof, are provided. The method comprises irradiating a laser beam towards a surface of the wafer and converging the laser beam to form a focal point so that a focal volume defined by the focal point and a boundary of the laser beam within the wafer is formed. Energy encompassed within the focal volume causes the wafer located at the periphery of the focal volume to contract faster than the wafer located within the focal volume, thereby generating a crack within the wafer. | 2011-10-06 |
20110244660 | MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - An object is to provide a manufacturing method of a semiconductor substrate provided with a single crystal semiconductor layer with a surface having a high degree of flatness. Another object is to manufacture a semiconductor device with high reliability by using the semiconductor substrate provided with a single crystal semiconductor layer with a high degree of flatness. In a manufacturing process of a semiconductor substrate, a thin embrittled region containing a large crystal defect is formed in a single crystal semiconductor substrate at a predetermined depth by subjecting the single crystal semiconductor substrate to a rare gas ion irradiation step, a laser irradiation step, and a hydrogen ion irradiation step. Then, by performing a separation heating step, a single crystal semiconductor layer that is on a surface side than the embrittled region is transferred to a base substrate. | 2011-10-06 |
20110244661 | Large Scale High Quality Graphene Nanoribbons From Unzipped Carbon Nanotubes - A new method is disclosed for large-scale production of pristine few-layer graphene nanoribbons (GNRs) through unzipping of mildly gas-phase oxidized, and, optionally, metal-assisted oxidized, multiwalled and few-walled carbon nanotubes. The method further comprises sonication in an organic solvent. High-resolution transmission electron microscopy revealed nearly atomically smooth edges for narrow GNRs (2-30 nm). The GNRs exhibit ultra-high quality with low ratios of disorder (D) to graphitic (G) Raman bands (I | 2011-10-06 |
20110244662 | METHOD OF MANUFACTURING GRAPHENE BY USING GERMANIUM LAYER - A method of manufacturing graphene includes forming a germanium layer on a surface of a substrate, and forming the graphene directly on the germanium layer by supplying carbon-containing gas into a chamber in which the substrate is disposed. | 2011-10-06 |
20110244663 | FORMING A COMPOUND-NITRIDE STRUCTURE THAT INCLUDES A NUCLEATION LAYER - The present invention generally provides apparatus and methods for forming LED structures. In one embodiment, a method for fabricating a compound nitride-based semiconductor structure is provided. The method comprises forming a Group III-nitride buffer layer over one or more substrates in a first processing chamber, transferring the one or more substrates having the Group III-nitride buffer layer deposited thereon into a second processing chamber without exposing the one or more substrates to an ambient atmospheric environment, and forming a bulk Group III-V layers over the Group III-nitride buffer layer in the second processing chamber. In one example, the first processing chamber may be a MOCVD, PVD based chamber, CVD based chamber, ALD based chamber, sputtering chamber, or any other vapor deposition chamber. The second processing chamber may be a MOCVD or HVPE chamber. | 2011-10-06 |
20110244664 | METHOD OF MANUFACTURING SUPERJUNCTION STRUCTURE - The present invention discloses a method of manufacturing superjunction structure, which comprises: step 1, grow an N type epitaxial layer on a substrate having a (100) or (110) oriented surface; step 2, etch the N type epitaxial layer to form trenches therein; step 3, fill the trenches by P type epitaxial growth in the trenches by using a mixture of silicon source gas, halide gas, hydrogen gas, and doping gas. By using the manufacturing method according to the present invention, no void or only small voids are formed in the trenches after trench filling. | 2011-10-06 |
20110244665 | MANUFACTURING METHOD OF GaN BASED SEMICONDUCTOR EPITAXIAL SUBSTRATE - A low-temperature protective layer having AlN is grown on a rare earth perovskite substrate and a first GaN based semiconductor layer having Al | 2011-10-06 |
20110244666 | Methods Of Manufacturing Stair-Type Structures And Methods Of Manufacturing Nonvolatile Memory Devices Using The Same - Methods of manufacturing stair-type structures and methods of manufacturing nonvolatile memory devices using the same. Methods of manufacturing stair-type structures may include forming a plurality of thin layers stacked in plate shapes, forming a mask on an utmost thin layer, patterning the utmost layer using the mask as an etch mask, escalating a width of the mask and etching each of the thin layers at a different width of the mask to form a stair-type structure of the thin layers. Control gates may be formed into the stair-type structures using the methods of manufacturing stair-type structures. | 2011-10-06 |
20110244667 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device including a nitride semiconductor layer having high-precision thickness is provided. The method includes steps of: forming a gallium nitride (GaN) layer whose main face is a +c face on a substrate; forming a trench by selectively etching down a partial region in the +c face of the GaN layer; forming a metal layer so as to bury the trench; and separating the substrate and the GaN layer, after that, polishing a −c face of the GaN layer until the metal layer is exposed, and removing a part in a thickness direction of the GaN layer. | 2011-10-06 |
20110244668 | Semiconductor device and manufacturing process therefor - A process for manufacturing a semiconductor device, in which a current flows in a deflected part that includes a semiconductor, includes forming a straight beam having a doubly-clamped beam structure that includes the semiconductor by forming a void under the beam, filling the void with a liquid, and contacting a center of the beam with a bottom of the void by drying the liquid to form the deflected part. | 2011-10-06 |
20110244669 | METHOD FOR LOW TEMPERATURE ION IMPLANTATION - Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process. | 2011-10-06 |
20110244670 | Replacement Gate Approach for High-K Metal Gate Stacks by Avoiding a Polishing Process for Exposing the Placeholder Material - In a replacement gate approach, the exposure of the placeholder material of the gate electrode structures may be accomplished on the basis of an etch process, thereby avoiding the introduction of process-related non-uniformities, which are typically associated with a complex polishing process for exposing the top surface of the placeholder material. In some illustrative embodiments, the placeholder material may be exposed by an etch process based on a sacrificial mask material. | 2011-10-06 |
20110244671 | Method for Fabricating a III-Nitride Semiconductor Device - A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof. | 2011-10-06 |
20110244672 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device including forming a mask layer on a polycrystalline silicon film formed on a semiconductor substrate via an insulating film; forming a dense pattern and a sparse pattern on the mask layer to form a mask; etching the polycrystalline silicon film with the mask by controlling a temperature of the semiconductor substrate placed in an etching chamber at 50 degrees Celsius or higher, supplying an etching gas composed of a hydrogen bromide containing gas and a fluoromethane based gas into the chamber, and generating plasma in the chamber. | 2011-10-06 |
20110244673 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH BURIED GATES - A method for fabricating a semiconductor device includes: forming a thin film over trenches by using a first source gas and a first reaction gas; performing a first post-treatment on the thin film by using a second reaction gas; and performing a second post-treatment on the thin film by using a second source gas. | 2011-10-06 |
20110244674 | Method Of Forming A Plurality Of Spaced Features - A method of forming a plurality of spaced features includes forming sacrificial hardmask material over underlying material. The sacrificial hardmask material has at least two layers of different composition. Portions of the sacrificial hardmask material are removed to form a mask over the underlying material. Individual features of the mask have at least two layers of different composition, with one of the layers of each of the individual features having a tensile intrinsic stress of at least 400.0 MPa. The individual features have a total tensile intrinsic stress greater than 0.0 MPa. The mask is used while etching into the underlying material to form a plurality of spaced features comprising the underlying material. Other implementations are disclosed. | 2011-10-06 |
20110244675 | Structure and method of forming pillar bumps with controllable shape and size - A structure and method of forming pillar bumps with controllable shape and size are provided, which use polishing planarization technology to eliminate shape difference among pillar bumps on a wafer and die, thus yield the pillar bumps with design shape and size. | 2011-10-06 |
20110244676 | CHEMICAL MECHANICAL POLISHING (CMP) PROCESSING OF THROUGH-SILICON VIA (TSV) AND CONTACT PLUG SIMULTANEOUSLY - A method includes forming conductive material in a contact hole and a TSV opening, and then performing one step to remove portions of the conductive material outside the contact hole and the TSV opening to leave the conductive material in the contact hole and the TSV opening, thereby forming a contact plug and a TSV structure, respectively. In some embodiments, the removing step is performed by a CMP process. | 2011-10-06 |
20110244677 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS - A method of manufacturing a semiconductor device includes: forming a first conductive film on a substrate; forming an insulating film to cover the conductive film; etching the insulating film to form an opening portion to expose at least a portion of the first conductive film in the insulating film; irradiating the opening portion with ultraviolet rays in a reduction gas atmosphere; forming a barrier metal film in the opening portion; and forming a second conductive film on the barrier metal film. | 2011-10-06 |
20110244678 | SEMICONDUCTOR PROCESS - A semiconductor process is provided. First, a metal layer, a dielectric layer and a patterned hard mask layer are sequentially formed on a substrate. Thereafter, a portion of the dielectric layer is removed to form an opening exposing the metal layer. Afterwards, a cleaning solution is used to clean the opening. The cleaning solution includes a triazole compound with a content of 0.00275 to 3 wt %, sulfuric acid with a content of 1 to 10 wt %, hydrofluoric acid with a content of 1 to 200 ppm and water. The semiconductor process can reduce the possibility of having an incomplete turning on, a leakage or a short, so that the yield of the product is increased. | 2011-10-06 |
20110244679 | Contact Elements of a Semiconductor Device Formed by Electroless Plating and Excess Material Removal with Reduced Sheer Forces - Contact elements in the contact level of a semiconductor device may be formed on the basis of a selective deposition technique, such as electroless plating, wherein an efficient planarization of the contact level is achieved without subjecting the contact elements to undue mechanical stress. In some illustrative embodiments, an overfilling of the contact openings may be reliably avoided and the planarization of the surface topography is accomplished on the basis of a non-critical polishing process. In other cases, electrochemical etch techniques are applied in combination with a conductive sacrificial current distribution layer in order to remove any excess material of the contact elements without inducing undue mechanical stress. | 2011-10-06 |
20110244680 | SURFACE CLEANING AND SELECTIVE DEPOSITION OF METAL-CONTAINING CAP LAYERS FOR SEMICONDUCTOR DEVICES - A method is provided for integrating metal-containing cap layers into copper (Cu) metallization of semiconductor devices. In one embodiment, the method includes providing a planarized patterned substrate containing metal surfaces and dielectric layer surfaces with a residue formed thereon, removing the residue from the planarized patterned substrate, and depositing metal-containing cap layers selectively on the metal surfaces by exposing the dielectric layer surfaces and the metal surfaces to a deposition gas containing metal-containing precursor vapor. The removing includes treating the planarized patterned substrate containing the residue with a reactant gas containing a hydrophobic functional group, and exposing the treated planarized patterned substrate to a reducing gas. | 2011-10-06 |
20110244681 | METHOD OF FORMING A TANTALUM-CONTAINING LAYER ON A SUBSTRATE - A method for forming a tantalum-containing layer on a substrate, the method comprising at least the steps of:
| 2011-10-06 |
20110244682 | ATOMIC LAYER DEPOSITION OF TUNGSTEN MATERIALS - Embodiments of the invention provide a method for depositing tungsten-containing materials. In one embodiment, a method includes forming a tungsten nucleation layer over an underlayer disposed on the substrate while sequentially providing a tungsten precursor and a reducing gas into a process chamber during an atomic layer deposition (ALD) process and depositing a tungsten bulk layer over the tungsten nucleation layer, wherein the reducing gas contains hydrogen gas and a hydride compound (e.g., diborane) and has a hydrogen/hydride flow rate ratio of about 500:1 or greater. In some examples, the method includes flowing the hydrogen gas into the process chamber at a flow rate within a range from about 1 slm to about 20 slm and flowing a mixture of the hydride compound and a carrier gas into the process chamber at a flow rate within a range from about 50 sccm to about 500 sccm. | 2011-10-06 |
20110244683 | Fabricating Voids Using Slurry Protect Coat Before Chemical-Mechanical Polishing - A semiconductor structure is fabricated with a void such as a line, contact, via or zia. To prevent slurry particles from falling into and remaining in a void during a chemical-mechanical planarization process, a protective coat is provided in the void to trap the slurry particles and limit an extent to which they can enter the void. A metal layer is provided above the protective coat. Subsequently, the protective coat and trapped slurry particles are removed by cleaning, leaving a void which is substantially free of slurry particles. This is beneficial such as when the void is used as an alignment mark. The protective coat can be an organic layer such as spin-on carbon or i-line photoresist, an ashable material such as amorphous carbon, or a dissolvable and selective material such as SiN. | 2011-10-06 |
20110244684 | POLISHING LIQUID AND POLISHING METHOD - Provided is a polishing liquid which is used for chemical mechanical polishing of a body to be polished having a layer containing polysilicon or a modified polysilicon, and using which the polishing rate of a layer containing a silicon-based material other than polysilicon is high and polishing of the layer containing polysilicon can be selectively suppressed. The polishing liquid includes components (A), (B), and (C), has a pH of from 1.5 to 7.0, and is capable of selectively polishing a second layer with respect to a first layer: (A) colloidal silica particles having a negative ζ potential; (B) phosphoric acid or an organic phosphonic acid compound represented by the following Formula (1) or (2); and (C) an anionic surfactant having at least one group represented by the following Formulae (I) to (IV): | 2011-10-06 |
20110244685 | Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal - A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises silicon oxide; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and a substance according to formula I | 2011-10-06 |
20110244686 | INORGANIC RAPID ALTERNATING PROCESS FOR SILICON ETCH - A method for etching features into a silicon substrate disposed below a mask in a plasma processing chamber is provided. The silicon substrate is etched through the mask comprising a plurality of cycles, wherein each cycle comprises a sidewall deposition phase and an etch phase. The sidewall deposition phase comprises providing a flow of sidewall inorganic deposition phase gas comprising a silicon containing compound gas and at least one of oxygen, nitrogen or NO | 2011-10-06 |
20110244687 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - In a process for forming trenches having M different widths in a substrate, a passivation step and an etching step are alternately performed. The passivation step includes depositing a passivation layer on a bottom of the trenches by converting gas introduced in a chamber into plasma. The etching step includes removing the passivation layer on the bottom of the trenches and applying reactive ion etching to the bottom to increase a depth of the trenches. The etching step further includes setting energy for the reactive ion etching to a predetermined value when the passivation layer on the bottom of the trench having the Nth smallest width is removed. The value allows the etching amount of the trench having the Nth smallest width to be equal to or greater than the etching amount of the trench having the (N+1)th smallest width. | 2011-10-06 |
20110244688 | METHOD OF PRODUCING MASK - According to one embodiment, a method of producing a mask includes: a step of forming a pattern on a substrate; a step of forming a first film that covers the top surface and side surface of the pattern and contains a first material; a step of forming a second film containing a second material on the first film; a step of performing anisotropic etching of the first and second films in a way that forms a sidewall layer including the first and second films on the side surface of the pattern and removes the first and second films on any location other than the sidewall layer; a step of performing isotropic etching of the first film of the sidewall layer; and a step of removing the pattern. | 2011-10-06 |
20110244689 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a first mask pattern on a substrate by using a material including a polymer having a protection group de-protectable by an acid, the first mask pattern having a plurality of holes; forming a capping layer on an exposed surface of the first mask pattern, the capping layer including an acid source; diffusing the acid source into the first mask pattern so that the protection group becomes de-protectable from the polymer in the first mask pattern; forming a second mask layer on the capping layer, the second mask layer separate from the first mask pattern and filling the plurality of holes in the first mask pattern; and forming a plurality of second mask patterns in the plurality of holes by removing the capping layer and the first mask pattern. | 2011-10-06 |
20110244690 | COMBINATORIAL PLASMA ENHANCED DEPOSITION AND ETCH TECHNIQUES - According to various embodiments of the disclosure, an apparatus and method for enhanced deposition and etch techniques is described, including a pedestal, the pedestal having at least two electrodes embedded in the pedestal, a showerhead above the pedestal, a plasma gas source connected to the showerhead, wherein the showerhead is configured to deliver plasma gas to a processing region between the showerhead and the substrate and a power source operably connected to the showerhead and the at least two electrodes with plasma being substantially contained in an area which corresponds with one electrode of the at least two electrodes. | 2011-10-06 |
20110244691 | ETCHING PROCESSING METHOD - An etching processing method for etching a substrate formed with a target film and a mask film is performed in a substrate processing apparatus including a first and a second power supply for respectively supplying a higher and a lower high frequency power to a processing space and a mounting table, and a DC power supply for supplying a DC power to an electrode. The method includes a modification step for modifying a shape of a pattern formed on the mask film; and an etching step for etching the target film by using the mask film. The mask film is etched by the plasma in the modification step. Further, in the etching step, the DC power is applied to the electrode and the lower high frequency power is applied to the mounting table in a pulse wave form in which a higher and a lower power level are repeated. | 2011-10-06 |
20110244692 | Method for Forming a Nano-textured Substrate - A method for forming a nano-textured surface on a substrate is disclosed. An illustrative embodiment of the present invention comprises dispensing of a nanoparticle ink of nanoparticles and solvent onto the surface of a substrate, distributing the ink to form substantially uniform, liquid nascent layer of the ink, and enabling the solvent to evaporate from the nanoparticle ink thereby inducing the nanoparticles to assemble into an texture layer. Methods in accordance with the present invention enable rapid formation of large-area substrates having a nano-textured surface. Embodiments of the present invention are well suited for texturing substrates using high-speed, large scale, roll-to-roll coating equipment, such as that used in office product, film coating, and flexible packaging applications. Further, embodiments of the present invention are well suited for use with rigid or flexible substrates. | 2011-10-06 |
20110244693 | COMPONENT FOR SEMICONDUCTOR PROCESSING APPARATUS AND MANUFACTURING METHOD THEREOF - A component for a semiconductor processing apparatus includes a matrix defining a shape of the component, and a protection film covering a predetermined surface of the matrix. The protection film consists essentially of an amorphous oxide of a first element selected from the group consisting of aluminum, silicon, hafnium, zirconium, and yttrium. The protection film has a porosity of less than 1% and a thickness of 1 nm to 10 μm. | 2011-10-06 |
20110244694 | DEPOSITING CONFORMAL BORON NITRIDE FILMS - A method of forming a boron nitride or boron carbon nitride dielectric produces a conformal layer without loading effect. The dielectric layer is formed by chemical vapor deposition (CVD) of a boron-containing film on a substrate, at least a portion of the deposition being conducted without plasma, and then exposing the deposited boron-containing film to a plasma. The CVD component dominates the deposition process, producing a conformal film without loading effect. The dielectric is ashable, and can be removed with a hydrogen plasma without impacting surrounding materials. The dielectric has a much lower wet etch rate compared to other front end spacer or hard mask materials such as silicon oxide or silicon nitride, and has a relatively low dielectric constant, much lower then silicon nitride. | 2011-10-06 |
20110244695 | UV-CURABLE INORGANIC-ORGANIC HYBRID RESIN AND METHOD FOR PREPARATION THEREOF - The present invention relates to a method for preparation of an ultraviolet (UV)-curable inorganic-organic hybrid resin containing about or less than 4% volatiles and less than 30% organic residues. The UV-curable inorganic-organic hybrid resin obtained according to this method can be UV-cured within a markedly very short time and enables, upon curing, the formation of a transparent shrink- and crack-free glass-like product having high optical quality, high thermal stability and good bonding properties. In view of these properties, this hybrid resin can be used in various applications such as electro-optic, microelectronic, stereolithography and biophotonic applications. | 2011-10-06 |
20110244696 | 60 GHz DATA TRANSMISSION THROUGH A MECHANICAL SWIVEL CONNECTION - A swivel mechanism comprising a first swivel portion having a first coupling portion and a second swivel portion having a second coupling portion, the second swivel portion dimensioned for mechanically engaging with the first swivel portion to provide at least a first mechanical coupling position and at least a first data communication channel, wherein the first data communication channel is provided through a hollow cavity formed when the first swivel portion and the second swivel portion are in the first mechanical coupling position and wherein the first data communication channel is configured to convey 60 GHz data signals when the first swivel portion and the second swivel portion are in the first mechanical coupling position. | 2011-10-06 |
20110244697 | MAGNETIC JUMPER FOR BYPASSING ELECTRICAL CIRCUITS - A magnetic jumper for bypassing electrical circuits. The jumper includes a magnet at each end of a wire. Each magnet can be attached to a terminal of a low voltage electrical circuit in order to bypass that circuit for testing and troubleshooting purposes. The magnetic jumper works with almost any terminal that has steel screws. | 2011-10-06 |
20110244698 | Intelligent Inter-Connect and Cross-Connect Patching System - An intelligent network patch field management system is provided that includes electronic hardware, firmware, mechanical assemblies, cables, and software that provide visible and audible cues for connecting and disconnecting patch cords in an interconnect or cross-connect patching environment. Systems of the present invention also monitor patch cord connections in a network. | 2011-10-06 |
20110244699 | Apparatus for Preventing Electrical Shock in Devices - A device for preventing electrical shock from a device with electrical interfaces. A shutter or other barrier associated with the device that physically prevents access or contact to one of the electrical interfaces while another electrical interface is in use. | 2011-10-06 |
20110244700 | WATERPROOF 20 AMP SIMPLEX RECEPTACLE - A 20 amp simplex assembly ( | 2011-10-06 |
20110244701 | ELECTRICAL CONNECTOR AND ONE PAIR OF SWITCH TERMINALS THEREOF - An electrical connector includes a base, terminals each being disposed on the base and having a contact, and one pair of switch terminals, disposed on the base, including first and second terminals each having a fixing portion, a pin portion and an extension. The base has a connection slot for accommodating an electronic element. The first and second terminals have the fixing portions, each fixed to the base and having a plateless section. The extensions respectively have corresponding connection points. The extension of the first terminal has a pushing portion. The electronic element is inserted into the slot to push the pushing portion to make the extension of the first terminal be elastically moved to touch the switch terminals. Plate surfaces of the fixing portions are arranged in parallel or on the same plane and fixed to the base, and do not overlap with each other. | 2011-10-06 |
20110244702 | RETICULATED FLASH PREVENTION PLUG - A connector for introducing fluid to an electrical cable affixed in a chamber internal to the connector, the connector comprising an injection port exposed to at least one exterior surface of the cable connector, wherein the injection port is in fluidic communication with the chamber, and a reticulated plug is positioned within an insulated segment of the injection port and sized to fill at least a portion thereof. The reticulated plug may be used in combination with various types of conventional injection connectors to allow swapping of an insulative permanent plug for an injection plug after a dielectric enhancement fluid has been introduced into the interior of a cable using the reticulated plug, wherein the cable is energized during the swapping operation. | 2011-10-06 |
20110244703 | Cold Cathode Fluorescent Lamp Connector - A cold cathode fluorescent lamp connector includes a holding base and a plurality of terminals. The holding base has a base board and a plurality of terminal housings which are integratedly molded with the base board as a single piece, each of the terminal housings is perpendicularly interweaved in the base board, two opposite ends of the base board respectively define a first locking portion and a second locking portion matchable with the first locking portion for making the first locking portion of one cold cathode fluorescent lamp connector can be engaged with the second locking portion of another cold cathode fluorescent lamp connector so as to series-connect a plurality of the cold cathode fluorescent lamp connectors together. The terminals are respectively received in the terminal housings of the holding base. | 2011-10-06 |
20110244704 | EXTENSION CABLE WITH SEQUENCED DISCONNECT - A breakaway cable is provided with a plug that has a number of wires that are arranged so as to disconnect in a predetermined sequence. The disconnect plug is designed to fit into a standard plug assembly. This end of the plug presents the same set of pins as a truck, thus extending the existing cable by the extender length. The breakaway cable is configured to break in a controlled manner in the event a vehicle to which the cable is connected should pull away. | 2011-10-06 |
20110244705 | ELECTRICAL COMPONENTS HAVING CONTACTS CONFIGURED TO ENGAGE THRU-HOLES USING AXIAL FORCES - An electrical component configured to engage a circuit board having a thru-hole. The thru-hole has a plated portion of conductive material that includes an outward facing contact pad. The component includes a housing having a mounting surface that is configured to be mounted to the circuit board. The component also includes an electrical contact that is coupled to the housing and projects away from the mounting surface. The contact is configured to engage the thru-hole of the circuit board. The contact includes an elongated body that extends along a contact axis to a leading end that is configured to be inserted into a passage of the plated portion. The contact also includes an engagement projection that extends away from the body and is biased against the contact pad to maintain an electrical connection. | 2011-10-06 |
20110244706 | ELECTRICAL CONNECTOR HAVING A LATCH LOCK - An electrical connector includes a housing holding a contact configured for mating with a mating connector. The housing has a deflectable latch configured for latching engagement with the mating connector. The latch is movable from a resting position to an actuated position. The electrical connector also includes a latch lock separate and discrete from the housing. The latch lock being coupled to the housing such that the latch lock blocks the latch from moving from the resting position to the actuated position. | 2011-10-06 |
20110244707 | Apparatus and method securely connecting mating ends of multiple power cords - An apparatus for securely connecting mating ends of two power cords to prevent the mating ends of the two power cords from inadvertently or accidentally detaching from each other. The apparatus includes a flexible connector having a center segment, a first end and a second end. A preferred form of the flexible connector can readily accommodate varying configurations of mating ends of power cords. Preferably, the flexible connector is substantially symmetrical to facilitate installation. The first end has a first opening and the second end has a second opening. The center segment, the first end and the second end are manipulable to form a first retaining member and a second retaining member for securing a first end of a first power cord to a first end of a second power cord. Preferably, the flexible connector is configured such that it may not be inadvertently or accidentally dislodged from the first power cord or the second power cord. The first retaining member is adapted to receive the first end of the first power cord. The second retaining member is adapted to receive the first end of the second power cord. Preferably, the first retaining member and the second retaining member are adjustable. | 2011-10-06 |
20110244708 | TERMINAL BLOCK AND METHOD OF ASSEMBLING THE SAME - To provide a terminal block having a structure for facilitating the mounting operation of a coil spring to the terminal block, and a method for assembling the terminal block. A spring supporting part ( | 2011-10-06 |
20110244709 | Connector for use in accepting a base-plate - A connector | 2011-10-06 |
20110244710 | TOOL-RELEASABLE SOLAR POWER CONNECTOR - An electrical connector housing system includes a plug housing, a receptacle housing, and a latching mechanism. The latching mechanism pivots on pivot posts on one housing and hooks to latching posts on the other housing, thereby securing the mated housings together. Catches on the latch mechanism engage with tabs near the latching posts when the latching mechanism is latched. The catches must be released using a screwdriver or similar tool before opening the latching mechanism and separating the mated housings. A protective barrier can be included to block direct access to the engaged catches and tabs. The housings include overlapping shells which exclude water and dirt, and the latching mechanism at least partially covers and further protects the shells when closed. In embodiments, a retaining mechanism automatically holds the latch open against gravity, facilitating connection and release of the housings with one hand and/or while wearing gloves. | 2011-10-06 |
20110244711 | CONNECTOR - A first connector has a first holding member holding first male and female terminals. Each first male terminal has a horizontally extending first male contact. Each first female terminal has a first female contact. A second connector has a second holding member holding second male and female terminals. Each second male terminal has a horizontally extending second male contact receivable in the first female contact. Each second female terminal has a second female contact which receives the first male contact. The first and second connectors are positioned at a predetermined position in a vertical direction whereas the first male contact is apart from the second female contact while the second male contact is apart from the first female contact. A guiding mechanism guides the first connector to a position where the first and second male contacts are respectively connected to the second and first female contacts. | 2011-10-06 |
20110244712 | ELECTRICAL APPLIANCE - An electrical appliance includes a housing having a holding chamber and an insert slot, an insulation displacement connector (IDC), and an electrical component such as a battery inserted into the holding chamber. The component has an electric connector extending through the holding chamber into the insert slot. Upon insertion of the IDC into the insert slot, the IDC contacts the electric connector of the component and contacts a printed circuit board (PCB) mounted to the housing whereby the electrical component and the PCB are electrically connected via the electric connector of the component and the IDC. The holding chamber completely surrounds, at least in sections, the component within the holding chamber. The holding chamber includes a radially-pivotable latching clip which axially fixes in place the component within the holding chamber. | 2011-10-06 |
20110244713 | WELDING CONTROL CABLE ASSEMBLY WITH STRAIN RELIEF - A cable assembly with strain relief for providing welding control is provided. One welding control cable assembly includes a cable having a plurality of conductors configured to convey data and/or power in an insulative jacket. The cable assembly also includes a retainer bound to an outer surface of the insulative jacket adjacent to an end of the cable and a connector assembly having a plurality of connector elements in a housing. Each of the connector elements is terminated to a respective one of the conductors. The housing is disposed adjacent to the retainer. The assembly includes an overmolded shell disposed over the retainer and at least a portion of the connector assembly. At least the insulative jacket, the retainer and the overmolded shell cooperate to resist stress on the conductors by axial tensile forces placed on the connector assembly. | 2011-10-06 |
20110244714 | HIGH-CURRENT PLUG-IN CONNECTOR - The present invention relates to high-current plug-in connectors, in particular to unipolar high-current plug-in connectors for wind turbine generator systems, which can be arranged beside one another in a space-saving manner and can also meet high requirements on the current-carrying capacity. According to the invention, this is achieved in that cross-sections of which the longitudinal extent exceeds the transverse extent are selected for the plug-in and coupling contact. This means that the dimension in the transverse direction can be restricted and simultaneously the cable cross-section and the contact surface required from an electrical point of view are provided by the increased longitudinal extent. Moreover, the plug and the coupling comprise a visible mechanical coding, which prevents accidental reversal of the polarity of adjacently arranged cables. | 2011-10-06 |
20110244715 | Adaptive Power Strip - An adaptive power strip has a power rail. A power entry module and one or more receptacle modules having plug receptacles are mounted on the power rail. The power entry module has a power inlet to which a source of power can be coupled. The power entry module distribute power from the power source to the power rail. The receptacle modules distribute power from the power rail tot the respective plug receptacles. In an aspect, the power entry module has a communications module that discovers receptacle modules on the power rail having data communications capability and if a receptacle module does not have a unique identifier assigned to it, assigns a unique identifier to the receptacle module that the receptacle module stores in a memory. The communications modules also retrieves from each receptacle module having data communications capability, information about the characteristics of the receptacle module that the communications module stores in a memory. The communications module maintains an inventory in memory of the receptacle modules on the power rail that includes information about the characteristics of the receptacle modules. In an aspect, receptacle modules determine their locations on the power rail and send information to the communications module that the communications module uses to determine the location of the receptacle modules on the power rail. In an aspect, the power entry module determines the type of power service provided to it at its power inlet. | 2011-10-06 |
20110244716 | CABLE ASSEMBLY FOR MOBILE MEDIA DEVICES - Disclosed herein is a mobile media device cable assembly for connecting a mobile media device with an accessory device, e.g., a docking station, audio system (stereo) or video system (television). The cable assembly provides multi-pin connections while the device is in a case or cover. The assembly comprises a flexible cable having a plurality of wires for transmitting audio, video, data, and power signals. The plurality of wires are in communication with respective pins of multi-pin female and male connectors on either terminus of the flexible cable. A first ground return comprising a flexible wire shield encapsulates the plurality of wires, and a second ground return comprising a flexible wire shield is surrounded by the first ground return. The second ground return encapsulates and electrically isolates the wires a subset of the plurality of wires, i.e., the wires that transmit audio and video signals, to prevent electric signal crossover. In one embodiment, at least two pins of each of the female and male connectors are electrically associated with the second ground return. In another embodiment, the multi-pin male connector comprises a first printed circuit board, where one end of the board is soldered to the plurality of wires and has a maximum dimension of 16 mm, and a housing associated with the multi-pin male connector has a maximum dimension of 27 mm. | 2011-10-06 |
20110244717 | MOUNTING APPARATUS FOR ELECTRONIC DEVICE - A mounting apparatus includes a mounting rack and an electronic device. The mounting rack includes a frame. An interface is defined in the frame. The frame includes a securing member. An electronic device is inserted in the mounting rack from front to back. The electronic device includes a back wall. The back wall is adjacent to the frame and defines a port for receiving a cable. The cable is secured to the securing member and inserted into the interface of the frame. | 2011-10-06 |
20110244718 | Flexible holder for connectors - A holder is capable of providing flexible support for the connector of a flexible printed circuit board, and has particular applicability for battery recharging cradles for a mobile computing device or hand-held scanner. The holder comprises a receptacle having a rear wall and two side walls, along with protrusions to slidably retain the connector therein. The rear wall connects, using a radiused bend, to a connecting wall, which may form an acute angle relative to the rear wall, and which may neck down to improve rotational capability. The connecting wall transitions, using a radiused bend, to a transverse wall, and from its ends are two cantilever straps extending towards the receptacle, and thereby foaming an acute angle relative to the connecting wall. An upward protruding boss on the end of each strap aids translational and rotational flexibility, where the holder is mounted to a surface using orifices in the bosses. | 2011-10-06 |
20110244719 | JUNCTION BOX WITH IMPROVED HEAT DISSIPATION - A junction box includes an outer box with a housing at a lower side thereof and a cavity above the housing, and a number of contacts retained on the housing. Each contact has a flat base portion, a first connecting portion and a second connecting portion at two ends thereof for connecting with a foil conductor of a photovoltaic module and a cable respectively. Each contact is formed with at least one side arm upwardly protruding into the cavity from one lateral side of the base portion. | 2011-10-06 |
20110244720 | RF CONNECTOR - A radio-frequency connector consisting of a socket member and a plug member electrically connectable to the socket member is disclosed. The socket member or plug member has an impedance element mounted therein such that the impedance element is electrically connected to the metal casing and metal center pin of the socket member or plug member that carries the impedance element when the plug member is disconnected from the socket member, causing the impedance element to provide a terminal effect to insolate external electromagnetic noises; the impedance element is separated from the metal casing and metal center pin of the socket member or plug member that carries impedance element when the plug member is connected to the socket member. | 2011-10-06 |
20110244721 | IMPEDANCE MANAGEMENT IN COAXIAL CABLE TERMINATIONS - Managing impedance in coaxial cable termination. In one example embodiment, a method for terminating a coaxial cable is provided. The coaxial cable includes an inner conductor, an insulating layer surrounding the inner conductor, an outer conductor surrounding the insulating layer, and a jacket surrounding the outer conductor. The method includes various acts. First, a section of the insulating layer is cored out. Next, the diameter of the inner conductor that is positioned within the cored-out section is reduced. Then, at least a portion of an internal connector structure is inserted into the cored-out section so as to surround the section of reduced-diameter inner conductor. Finally, an external connector structure is affixed to the internal connector structure. A coaxial cable termination tool for use in the termination of a coaxial cable and a terminated coaxial cable are also disclosed. | 2011-10-06 |
20110244722 | COAXIAL CABLE COMPRESSION CONNECTORS - Coaxial cable connectors. In one example embodiment, a coaxial cable connector for terminating a coaxial cable is provided. The coaxial cable includes an inner conductor, an insulating layer, an outer conductor, and a jacket. The coaxial cable connector includes an internal connector structure, an external connector structure, and a conductive pin. The external connector structure cooperates with the internal connector structure to define a cylindrical gap that is configured to receive an increased-diameter section of the outer conductor. The external connector structure is configured to be clamped around the increased-diameter section so as to radially compress the increased-diameter section between the external connector structure and the internal connector structure. The conductive pin is configured to deform the inner conductor. | 2011-10-06 |
20110244723 | CONNECTION STRUCTURE OF COAXIAL HARNESS - A connection structure of a coaxial harness includes a coaxial harness, a ground bar, and a substrate. The coaxial harness includes a plurality of coaxial cables lined up. The coaxial cable includes a center conductor, an inner insulator, an outer conductor, and a jacket. The inner insulator and the outer conductor and the jacket are placed at an outer side of the center conductor in an order of the inner insulator, the outer conductor, and the jacket. The ground bar sandwiches a plurality of the outer conductor exposed at an end terminal part of the coaxial harness. The substrate is provided with a ground bar connection terminal and a center conductor connection terminal group. The ground bar connection terminal is connected with the ground bar. The center conductor connection terminal group includes an alignment of a center conductor connection terminal connected respectively to the center conductor. | 2011-10-06 |
20110244724 | RCA-COMPATIBLE CONNECTORS FOR BALANCED AND UNBALANCED INTERFACES - A socket connector includes a conductive center receptacle, first outer socket contact having a first socket contact surface, second outer socket contact having a second socket contact surface, and non-conductive socket body. The socket contact surfaces are separated longitudinally along an axis of the receptacle. The socket body maintains the socket contacts electrically isolated from each other and the receptacle whenever the socket connector is not mated with a bi-conducting plug connector. A plug connector includes a conductive center pin, first outer plug contact having a first plug contact surface, second outer plug contact having a second plug contact surface, annular insulator, and non-conductive plug body. The plug contact surfaces are separated longitudinally along an axis of the pin. The plug body and insulator maintain the plug contacts electrically isolated from each other and the pin whenever the plug connector is not mated with a bi-conducting socket connector. | 2011-10-06 |
20110244725 | CONNECTOR SYSTEM - A connector includes a housing ( | 2011-10-06 |
20110244726 | CONNECTOR - An opening (K) is formed in one side surface of a housing ( | 2011-10-06 |
20110244727 | ELECTRICAL CONNECTOR AND ELECTRICAL CONNECTOR ASSEMBLY - An electrical connector assembly includes a first connector consisting of a terminal holding member having a plurality of terminals, each of the terminals having a distributing section; a second connector; and an adapter module. The adapter module includes an assembler member for coupling the first and second connectors together, and a terminal distributing member for coupling to the terminal holding member, and formed with a first row of retention holes and a second row of retention holes spaced apart respectively from the first retention holes in parallel manner. Once the terminal holding member is coupled to the terminal distributing member, the terminals extend respectively through the first and second holes in the terminal distributing member, thereby forming and exposing two parallel rows of the distributing sections of the terminals from a flat end of the terminal distributing member. | 2011-10-06 |
20110244728 | UNIVERSAL SERIAL BUS CONNECTOR AND ADAPTOR OF THE CONNECTOR - A USB connector includes a body and first to fifth pins. The body has the same size as a type A USB connector. The first to fifth pins are disposed in the body. The first pin is adapted to be electrically connected to a power voltage. The second and the third pins are capable of transmitting a differential data signal. The fifth pin is adapted to be electrically connected to a reference voltage. The fifth pin and the fourth pin are a predetermined distance apart, so that the fourth pin is connected to the fifth pin via a ground pin of the four pins of a type A USB connector when the type A USB connector is connected to the USB connector. Furthermore, an adaptor of the USB connector is also provided. | 2011-10-06 |
20110244729 | AN ELECTRICAL CONNECTOR FOR ELECTRICAL CONNECTION BETWEEN NEIGHBORING CONNECTORS - A connector for a first wiring board of a first module type apparatus and a second wiring board of a second module type apparatus, the connector providing electrical connection between the first wiring board of the first module type apparatus and the second wiring board of the second module type apparatus when the first module type apparatus and the second module type apparatus are engaged with each other, the connector includes a housing; a first terminal; and a second terminal. | 2011-10-06 |
20110244730 | CONNECTOR AND PRINTED CIRCUIT BOARD FOOT PATTERN FOR A CONNECTOR - A connector, and printed circuit board foot pattern for a connector which can efficiently transmit a high-speed differential signal are provided. In a connector | 2011-10-06 |
20110244731 | LOW PROFILE ELECTRICAL CONNECTOR WITH TWO ROWS OF CONTACTS - An electrical connector includes a plurality of contacts and an insulative housing. Each contact comprises a retaining portion, a contact portion contact portion and a tail portion, the contacts divided into a first group and a second group. The insulative housing defines a mating face and opposite first and second side faces. The insulative housing defines two rows of mating passageways extending in a first direction running through the mating face. The tail portions of the first group expose to the first side face and the contact portion contact portions of the first group project in one row of said two rows of the mating passageways. The tail portions of the second group expose to the second side face and the contact portion contact portions of the second group project in the other row of said two rows of the mating passageways. | 2011-10-06 |
20110244732 | ELECTRICAL CONNECTOR WITH WELL ELECTRICAL CONNECTION PERFORMANCE - An electrical contact includes a pair of parallel spaced contacting arms. Each contacting arm defines a first spring section and a second spring section symmetrically defined. A first connecting portion unitarily connects with the first spring sections of the pair of the contacting arms and a second connecting portion unitarily connects with the second spring sections of the pair of the contacting arms. The first and second connecting portions respectively define a tuber protruding to touch with each other so as to improving the current intensity. | 2011-10-06 |
20110244733 | PLUG FOR UNIVERSAL SERIAL BUS CONNECTOR, AND CONNECTOR ASSEMBLY - A plug for a universal serial bus connector in the USB 3.0 standard to which a cable is connected to form a connector assembly, the cable including a signal line for the USB 2.0 standard and a ground line and being fixed by a cable fixing section of a connector shell, the plug includes an electrode which approximately abuts a distal end of the cable fixing section in the connector assembly, and to which at least one of the signal line for the USB 2.0 standard and the ground line is connected. | 2011-10-06 |
20110244734 | COMPONENT-TO-BOARD ELECTRICAL CONNECTOR - An electrical connector is provided with a plug portion having an upper surface on which electronic components can be disposed, and a receptacle portion for mounting on a circuit board. In the plug portion, a central recess is formed, which extends downwardly within the body of the receptacle portion so that the electronic components are disposed at least partially within the central recess. The plug portion has, on its lower surface side, plug side contacts that serve as electrical contacts with a terminal of the receptacle portion, and has a protruding portion for engaging the connector receptacle portion. The plug side contacts and the protruding portion are positioned outside of the central recess higher than a bottom plate portion which forms a bottom of the central recess. | 2011-10-06 |
20110244735 | ELECTRICAL CONNECTOR HAVING DEFORMABLE ENGAGING POST - An electrical connector includes an insulative housing defining a base and a cover confronting with the base, and a plurality of contacts sandwiched between the base and the cover. The base defining at least one latching post to engaging with corresponding mating hole on the cover. The at least one post is a cone tubular with a diameter of a free end thereof larger than a diameter of a root thereof and the mating hole has a portion aligned with the free end which has a larger diameter than another portion thereof aligned with the root. | 2011-10-06 |
20110244736 | FEMALE ELECTRICAL CONTACT PIN - A female contact pin configured for use with a compliant pin system includes opposed contact beams separated by an opening, and spring-biased mating contacts surrounded by a protective box. The opposed contact beams are configured to be positioned within a plated thru hole. The opening closes when the opposed contact beams are positioned within the plated thru hole. The spring-biased mating contacts are configured to receive and contact a mating post of a male contact pin. | 2011-10-06 |
20110244737 | PERSONAL WATERCRAFT - A personal watercraft comprises a water jet pump configured to be driven by an engine to generate a rearward water jet, a reverse bucket mounted at a periphery of the water jet pump and movable between a forward driving position and a reverse driving position, a driving power operation member configured to control an engine driving power, a reverse driving operation member configured to change a position of the reverse bucket from the forward driving position to the reverse driving position, and a deceleration operation member, wherein the reverse bucket is in the forward driving position when the deceleration operation member and the reverse driving operation member are not operated, and the reverse bucket is in a deceleration position between the forward driving position and the reverse driving position when the deceleration operation member has been operated and the reverse driving operation member is not operated. | 2011-10-06 |
20110244738 | ELECTRIC OUTBOARD MOTOR - In an electric outboard motor to be driven by an electric motor, the electric motor is formed in a watertight manner and is disposed to be exposed to the outside. Further, the electric motor is an air cooled type, and a shape of the electric motor is in a substantially flat shape in which a dimension in a horizontal direction perpendicular to an output shaft of the electric motor is made larger than a dimension in a height direction. The electric motor, when a hull is seen in plan view, is disposed in a manner that a front portion of the electric motor overlaps a transom board of the hull at the rear. | 2011-10-06 |
20110244739 | ELECTRIC OUTBOARD MOTOR - An electric outboard motor to be driven by an electric motor separately includes an electric outboard motor main body including the electric motor and a propulsion section that applies the electric motor as motive power and a power supply section supplying power to the electric motor, in which the electric outboard motor main body and the power supply section are detachably connected by couplers via a cable. Further, the coupler of the cable is allowed to be attached and detached to and from the coupler on a side of the power supply section. | 2011-10-06 |
20110244740 | ELECTRIC OUTBOARD MOTOR - An electric outboard motor main body including an electric motor and a propulsion section that applies the electric motor as motive power, and a power supply section supplying power to the electric motor and a control section controlling the electric motor that are disposed inside a hull separately from the electric outboard motor main body are provided, and the electric motor and the propulsion section are attached to enable a tilt-up operation via a tilt pin provided in a horizontal direction, and the electric motor is disposed higher than the tilt pin in a state before the tilt-up operation. | 2011-10-06 |
20110244741 | PERSONAL FLOATATION DEVICE - A personal floatation device may include a body, a strap and a belt. The body may include front and back portions. One of the front and back portions may include a first closure member. At least one of the front and back portions may be at least partially formed from a material that is sufficiently buoyant to keep a user afloat in water. The strap may extend around at least a portion of at least one of the front and back portions to secure the body to the user. The belt may include a first end fixed to the body and a second end having a second closure member selectively engaging the first closure member. | 2011-10-06 |
20110244742 | Self-Adhesive Fabric Reinforced Thermoplastic Polyolefin Waterproof Membrane - A self-adhesive fabric reinforced thermoplastic polyolefin compound waterproof membrane comprises a fabric reinforced thermoplastic polyolefin layer, a functional transition layer, a self-adhesive bitumen layer. Wherein, the fabric reinforced thermoplastic polyolefin layer comprises two thermoplastic polyolefin layers and a fabric reinforced layer between them. The thermoplastic polyolefin layer mainly comprises first-component and second-component thermoplastic polyolefins, filler, coupling agent, UV screener, antioxidant and light stabilizer. The present invention is provided with features of TPO membrane, such as environment friendly, easy processing, outstanding low-temperature performance, excellent weldability and durability, as well as advantages of self-adhesive bitumen membrane, such as easy installation, high bonding strength of substrate, watertight and fully adhered performance and reliable hot-air welding joints. It is characterized by high strength, perfect elongation, excellent low-temperature performance, high weatherability and high solar reflection, perfect flatness of roll, adequate bonding with self-adhesive bitumen and easy installation, which is a type of advanced waterproof membrane. | 2011-10-06 |
20110244743 | PROCESS FOR PRODUCING FIBER-REINFORCED COMPOSITE MATERIALS USING POLYAMIDES AS BINDERS - Process for producing fiber-reinforced composite materials, by | 2011-10-06 |
20110244744 | LAMINATED COMPOSITES AND METHODS OF MAKING THE SAME - The present disclosure relates to a fibrous veil and methods of making the same. The fibrous veil includes a base having a plurality of fibers, each of the plurality of fibers having an average diameter ranging from about 7,000 nm to about 9,000 nm. Graphite nano-platelets are attached to at least some of the plurality of fibers without a polymeric binder. | 2011-10-06 |
20110244745 | ELECTROSTATIC CHARGE DISSIPATIVE MATERIALS BY VACUUM DEPOSITION OF POLYMERS - The present invention relates to a process for making electrostatic charge dissipative material comprising the following steps: (a) optionally pretreating a substrate in a plasma field; (b) flash evaporating at least one monomer and at least one hygroscopic additive into a vacuum chamber to produce a vapor; (c) condensing the vapor on the substrate to produce a film of the monomer and the hygroscopic additive coating on the substrate; and (d) curing the monomer of the film to produce a polymeric layer containing hygroscopic additive on the substrate; wherein the condensing step is carried out under vapor-density and residence-time conditions that limit the polymeric layer to a maximum thickness of about 3.0 μm. The electrostatic charge dissipative material can be used to protect electrostatic sensitive electronic components. | 2011-10-06 |
20110244746 | SYNTHETIC LEATHER FABRIC WITH LYOCELL BACKING AND METHOD OF PRODUCING THE SAME - A fabric includes a synthetic leather and a substrate containing Lyocell. The substrate backs and adheres to the synthetic leather. A method for producing a fabric includes providing a substrate containing Lyocell and adhering a synthetic leather to the substrate containing Lyocell. The synthetic leather may be formed of polyurethane or polyvinyl chloride. | 2011-10-06 |
20110244747 | TAPE FOR ELECTRIC WIRE - A tape which has enhanced heat resistance, flame retardancy, and wearing resistance and is suitable for use in bundling a group of electric wires which will be laid in a high-temperature environment. The tape is configured using the same yarns ( | 2011-10-06 |
20110244748 | WATER RESISTANT MEDICAL BANDAGING PRODUCT - A water resistant article for positioning on an appendage to be treated comprises a knitted body constructed from synthetic yarns is provided, wherein each of the synthetic yarns comprise a bundle of substantially parallel fine monofilaments. | 2011-10-06 |