40th week of 2011 patent applcation highlights part 53 |
Patent application number | Title | Published |
20110244549 | HEPATITIS C VIRUS VARIANTS - The present invention relates to HCV variants, particularly variants that are resistant to a protease inhibitors such as VX-950. Also provided are methods and compositions related to the HCV variants. Further provided are methods of isolating, identifying, and characterizing multiple viral variants from a patient. | 2011-10-06 |
20110244550 | FACTOR IX POLYPEPTIDE MUTANT, ITS USES AND A METHOD FOR ITS PRODUCTION - Disclosed are a modified FIX (factor IX) polypeptide comprising a leucine, cysteine, aspartic acid, glutamic acid, histidine, lysine, asparagine, glutamine or tyrosine in position 338; pharmaceutical preparations containing said modified FIX polypeptide; a nucleotide sequence coding for the modified FIX polypeptide; and a method for producing the modified FIX polypeptide. | 2011-10-06 |
20110244551 | EXTRACT HAVING PROTEASE ACTIVITY - The present invention discloses a composition comprising a proteinaceous extract of | 2011-10-06 |
20110244552 | Methods and compositions for the production of recombinant virus vectors - A method for the production of a replication-deficient recombinant virus vector is disclosed. The replication-deficient recombinant virus vector has a recombinant virus genome with one or more defective viral genes. The method comprises infecting a host cell with a carrier virus having a carrier virus genome encoding one or more trans factors or variants thereof, incubating the infected host cell for a desired period of time, and isolating the replication-deficient recombinant virus vector. The carrier virus is a cytoplasmic virus that retains the carrier virus genome in the cytoplasm of the host cell. The host cell contains the recombinant viral genome and retains the recombinant viral genome in a nucleus of the host cell. Also disclosed is a carrier virus for the production of a replication-deficient recombinant virus vector. | 2011-10-06 |
20110244553 | BIOFUEL PRODUCTION - Methods, enzymes, recombinant microorganism, and microbial systems are provided for converting polysaccharides, such as those derived from biomass, into suitable monosaccharides or oligosaccharides, as well as for converting suitable monosaccharides or oligosaccharides into commodity chemicals, such as biofuels. Commodity chemicals produced by the methods described herein are also provided. Commodity chemical enriched, refinery-produced petroleum products are also provided, as well as methods for producing the same. | 2011-10-06 |
20110244554 | MECHANICAL DEVICE FOR DISPERSING BIOMASS POPULATIONS - A biomass dispersing system and method that breaks up biomass aggregates is disclosed. The system is designed to avoid cell damage and loss of cell viability while dispersing biomass aggregates for applications where biomass aggregates can cause operation problems. The dispersed biomass suspension obtained using the disclosed system will not plug the oil wells during biomass injection into underground wells. | 2011-10-06 |
20110244555 | METHOD AND SYSTEM FOR PURIFYING RAW GASES, PARTICULARLY BIOGAS, FOR OBTAINING METHANE - In a method for purifying biogas, components present in the biogas, such as carbon dioxide, sulfur compounds and ammonia, are separated in a plurality of different process stages. The method is characterized by low energy consumption and an increase in methane concentration of at least 10% while keeping methane losses low. In a first purifying step, carbon dioxide, hydrogen sulfide, ammonia and other organic water-soluble substances in the raw gas are removed at normal pressure or at overpressure of up to 6 bar in a wash column using fresh water, methane gas having a methane concentration of at least 65% is withdrawn at the head of the wash column. Methane and carbon dioxide dissolved in the washing water are sequentially separated from the contaminated washing water discharged from the washing stage in a first stripping column at normal pressure and subsequently in a second stripping column in a vacuum. | 2011-10-06 |
20110244556 | Process For Preparing Ganoderma Spore Oil - The present invention relates to a method for preparing | 2011-10-06 |
20110244557 | SAMPLE ANALYZER AND NON-TRANSITORY STORAGE MEDIUM - A sample analyzer comprising: a container set section in which a reagent container can be set which contains a reagent to be used in a sample analysis; a cover capable of making the container set section be in an open state and a closed state; a locking mechanism capable of permitting and prohibiting a closing of the cover; and a controller that controls the permission and prohibition of the closing of the cover by the locking mechanism. Also a non-transitory storage medium. | 2011-10-06 |
20110244558 | SAMPLE ANALYZER AND INFORMATION WRITING METHOD - A sample analyzer comprising: a reagent container set section for setting a reagent container; a reader/writer configured to read out an information from the recording medium attached to the reagent container set in the reagent container set section and configured to write an information on the recording medium; a writing instruction section configured to issue an instruction to write the information on the recording medium; and a controller configured to control the reader/writer to write the information on the recording medium attached to the reagent container set in the reagent container set section if the kind information read out from the recording medium indicates the specific reagent and the writing instruction section has issued the writing instruction. Also, a method of writing information on a recording medium attached to a reagent container. | 2011-10-06 |
20110244559 | Fabrication Method of Microfluidic Circuit, and Microfluidic Circuit Fabricated by Method Thereof - A fabrication method of a microfluidic circuit is provided, dispensable of mask registration, absent of deviation in mask positioning, and inexpensive in fabrication cost. The fabrication method of a microfluidic circuit has a light transmissive substrate stacked on a light absorptive substrate, and the light transmissive substrate welded with the light absorptive substrate for bonding by directing light through the light transmissive substrate. The microfluidic circuit includes a microchannel at the bottom face of the light transmissive substrate and/or at the top face of the light absorptive substrate. The method includes the step of forming, at the light transmissive substrate, a light attenuation region attenuating transmittance of light towards the microchannel when light is directed through the light transmissive substrate. | 2011-10-06 |
20110244560 | COMPOSTING APPARATUS - A composting apparatus comprising a container for receiving material to be composted a base member in the apparatus for supporting material to be composted and the compost when formed, the base having a curved lower wall and an upper opening to define a volume for receiving a drainage medium, a leachate chamber formed in the wall so that when leachate forms, the leachate is able to flow through the medium into the chamber; and an outlet from the chamber for supplying the leachate to the outside of the container. | 2011-10-06 |
20110244561 | siRNA-MEDIATED GENE SILENCING - The present invention is directed to small interfering RNA molecules (siRNA) targeted against an allele of interest, and methods of using these siRNA molecules. | 2011-10-06 |
20110244562 | RNA INTERFERENCE SUPPRESSION OF NEURODEGENERATIVE DISEASES AND METHODS OF USE THEREOF - The present invention is directed to RNA interference (RNAi) molecules targeted against a nucleic acid sequence that encodes poly-glutamine repeat diseases, and methods of using these RNAi molecules. | 2011-10-06 |
20110244563 | ASSAYS THAT USE THE T1R1 RECEPTOR POLYPEPTIDES TO SCREEN FOR T1R1-ASSOCIATED TASTE MODULATORS - Newly identified mammalian taste-cell-specific G protein-coupled receptors, and the genes and cDNA encoding said receptors are described. Specifically, T1R G protein-coupled receptors active in taste signaling, and the genes and cDNA encoding the same, are described, along with methods for isolating such genes and for isolating and expressing such receptors. Methods for representing taste perception of a particular tastant in a mammal are also described, as are methods for generating novel molecules or combinations of molecules that elicit a predetermined taste perception in a mammal, and methods for simulating one or more tastes. Further, methods for stimulating or blocking taste perception in a mammal are also disclosed. | 2011-10-06 |
20110244564 | CYSTINE KNOT MOLECULES - The present invention relates generally to a molecular framework having a cyclic structure. More particularly, the present invention provides cyclic proteins and derivatives thereof in which particular turns and other elements of the molecular structure are held in defined orientations with respect to each other. The cyclic proteins of the present invention provide a molecular framework for the introduction of particular amino acids or heterologous amino acid sequences to facilitate the presentation of biological activities associated with these heterologous amino acid sequences. The molecular framework of the present invention may be naturally cyclic or may be a cyclized derivative of a linear molecular or may be a linear derivative of a cyclized molecule. The present invention contemplates the use of the molecular framework with or without particular ammo acids inserted or substituted thereon for the treatment of or prophylaxis of disease conditions in animals, mammals (including humans) and plants. | 2011-10-06 |
20110244565 | Method Of Collecting Particles From A Sample Fluid - A method is provided for collecting a concentration of particles from a sample fluid containing the particles. The method includes the steps of providing a microfluidic device. The microfluidic device includes an input channel, an output channel and a collection region. The input channel has an input end and an output end. The output channel has an input end and an output end. The collection region interconnects the output end of the input channel and the input end of the output channel. The sample fluid flows through the input channel and the output channel at a first velocity and through the collection region at a second velocity less than the first velocity such that the particles collect in therein. | 2011-10-06 |
20110244566 | Enhanced efficiency of induced pluripotent stem cell generation - Human somatic cells are reprogrammed to become induced pluripotent stem cells (iPS cells) by the introduction of a minicircle DNA vector. Cells of interest include adipose stem cells. | 2011-10-06 |
20110244567 | Device and Method of 3-Dimensionally Generating IN VITRO Blood Vessels - Provided herein are apparatuses, systems and methods for generating concentration gradients of soluble molecules. Also, provided herein devices and methods for generating in vitro blood vessels. | 2011-10-06 |
20110244568 | RNA SEQUENCE-SPECIFIC MEDIATORS OF RNA INTERFERENCE - The present invention relates to a | 2011-10-06 |
20110244569 | METHOD OF INDUCING PROLIFERATION AND/OR DIFFERENTIATION OF NEURAL PRECURSOR CELLS BY INTRODUCING PROLACTIN OR WNT3A TO ACTIVATE LATENT NEURAL PRECURSOR CELLS - A method of inducing proliferation and/or differentiation of a hippocampal cell population activating a latent neural precursor cell, enriching a cell population for neural precursor cells and treating neurodegenerative diseases and/or repopulating a damaged hippocampus by introducing prolactin or Wnt3a so as to activate a latent neural precursor cell population. | 2011-10-06 |
20110244570 | VOLUME EXCLUSION AGENT TO ENHANCE FORMATION OF EXTRACELLULAR MATRIX - A method of enhancing the formation of extracellular matrix in culture. Cells in culture secrete most of the collagen into the media as unprocessed procollagen, i.e., the cells do not convert procollagen to collagen. In contrast, normal extracellular matrix deposition involves procollagen processing to collagen, fibril assembly and deposition into the cell layer to form a collagenous extracellular matrix. The addition of certain growth factors and the addition of a thin layer of a certain volume exclusion agent on top of the cells dramatically enhances the conversion of procollagen to collagen and will increase the amount of collagen and extracellular matrix associated with the cells. This invention advances bioengineering of connective tissues for medical applications that require an extensive and functional extracellular matrix with high tensile strength such as those in the cornea stroma, skin, tendons, ligaments, articular cartilage and the intervertebral disks. | 2011-10-06 |
20110244571 | CELL GROWTH - Methods of preparing pre-engineered surfaces using various nanolithography techniques to generate, isolate, and multiply homogeneous cell populations. Surfaces can be treated by etching before exposure to biological systems like cells. Stem cell applications are described. | 2011-10-06 |
20110244572 | FLAT MICROFIBERS AS MATRICES FOR CELL GROWTH - The present invention relates to culturing cells utilizing a matrix of microfibrillated thermoplastic polymeric materials. More specifically, the present invention relates to a method of culturing cells. In addition, the invention relates to a microfibrillated article for culturing cells dispersed in a cell culture medium. The matrix of thermoplastic polymeric materials for culturing cells of this invention finds use in tissue engineering and wound healing applications. | 2011-10-06 |
20110244573 | Method For The Supply Of Growth Components To Cell Cultures - The present invention provides a method for improving the preparation and use of growth media by the uses of specific pellet formulations, which especially are tablets of different sizes, which contain the growth medium or parts thereof and are sterilized with the standard methods of pharmaceutical technology. Specifically these pellet formulations are applied to control a cell culture in a way that the adaptation phase is shorter or that the growth is controlled by a release of certain components at a certain time and in a certain concentration during the process, and nutrients (e.g., nitrogen) can be packed into the cultivation vessel in amounts sufficient for high cell densities without the risk of intoxication of the organism. | 2011-10-06 |
20110244574 | INTERGENIC REGIONS AS INSERTION SITES IN THE GENOME OF MODIFIED VACCINIA VIRUS ANKARA (MVA) - The present invention relates to novel insertion sites useful for the integration of exogenous sequences into the Modified Vaccinia Ankara (MVA) virus genome. The present invention further provides plasmid vectors to insert exogenous DNA into the genome of MVA. Furthermore, the present invention provides recombinant MVA comprising an exogenous DNA sequence inserted into said new insertion site as medicine or vaccine. | 2011-10-06 |
20110244575 | METHODS, SYSTEMS AND COMPOSITIONS FOR INCREASED MICROORGANISM TOLERANCE TO AND PRODUCTION OF 3-HYDROXYPROPIONIC ACID (3-HP) - The present invention relates to methods, systems and compositions, including genetically modified microorganisms, adapted to exhibit increased tolerance to 3-hydroxypropionic acid (3-HP), particularly through alterations to interrelated metabolic pathways identified herein as the 3-HP toleragenic pathway complex (“3HPTGC”). In various embodiments these organisms are genetically modified so that an increased 3-HP tolerance is achieved. Also, genetic modifications may be made to provide at least one genetic modification to any of one or more 3-HP biosynthesis pathways in microorganisms comprising one or more genetic modifications of the 3HPTGC. | 2011-10-06 |
20110244576 | Herpes Simplex Virus Complex - There is provided an HSV complex which comprises an avirulent HSV and a targeting agent which allows the HSV particle to infect and lyse a specific targeted cell. The inventors have found a way in which avirulent HSV can be targeted to disease cells, e.g. cancer cells, by incorporating an antibody binding domain into one or more viral glycoproteins. | 2011-10-06 |
20110244577 | OXYGEN PERMEABILITY MEASURING APPARATUS AND METHOD, AND DEFECT INSPECTION APPARATUS AND METHOD - An oxygen permeability measuring apparatus for measuring an oxygen permeation rate of oxygen barrier film in a dark room is provided. A container is charged with inert gas, and sealed hermetically by use of the oxygen barrier film at least partially. A chemiluminescent compound is contained in the container, for emitting light by oxidation with the oxygen. A photon detector detects photons emitted by the chemiluminescent compound so as to determine an amount of the oxygen permeated through the oxygen barrier film. Preferably, the container includes a container body. An opening is formed in the container body, and closed hermetically by the oxygen barrier film attached thereto. The photon detector is disposed inside or outside the container. The oxygen permeation rate is equal to or less than 10 | 2011-10-06 |
20110244578 | Method For The Calibration Of A Device For Measuring Total Organic Carbon Content - The invention relates to a method for the calibration of a device for measuring the total organic carbon content (TOC) of an aqueous solution by measuring resistivity, comprising the following steps, in the presence of a reference TOO analyzer:
| 2011-10-06 |
20110244579 | Valve Analytical System - A lab on a valve analytical system includes a rotary sample preparation assembly having a stator and a rotor. The rotor includes a plurality of integral syringe pumps which can be aligned with passages formed within the stator. The stator passages can be connected with fluid inlet connector which connect the sample preparation assembly with fluid sources, and fluid outlet connectors which connect the sample preparation assembly with one or more wet chemical analytical devices. Some embodiments can include a mixer and optical sensor connected with the fluid outlets. One or more drive motors can be used to control simultaneous actuation of one or more of the syringe pumps, thereby providing for simultaneous delivery of metered volumes of fluid. | 2011-10-06 |
20110244580 | SAMPLE ANALYZER AND METHOD OF NOTIFYING USER BY THE SAME - A sample analyzer comprising: a first container set section in which a first reagent container, wherein the first container set section includes a first operating section which is operated by a user when setting the first reagent container; a first detector configured to detect an operation of the first operating section; a second container set section in which a second reagent container, wherein the second container set section includes a second operating section which is operated by the user when setting the second reagent container; a second detector configured to detect an operation of the second operating section; an output section; and a controller configured to control the output section to output a predetermined notification, if the second detector detects the operation of the second operating section by the user when it is required to set the first reagent container in the first container set section. | 2011-10-06 |
20110244581 | BIOLOGIC FLUID ANALYSIS SYSTEM WITH SAMPLE MOTION - An apparatus for and method of analyzing a biologic fluid sample is provided. The method includes the steps of: a) providing a sample cartridge having at least one channel for fluid sample passage; b) providing an analysis device having imaging hardware, a programmable analyzer, and a sample motion system, which sample motion system includes a bidirectional fluid actuator operable to selectively move a bolus of sample axially within the channel, and to cycle the bolus back and forth within the channel; and c) cycling the bolus of sample disposed within the channel at a predetermined frequency until constituents within the sample are substantially uniformly distributed, using the bidirectional fluid actuator. | 2011-10-06 |
20110244582 | SAMPLE PROCESSING APPARATUS, SAMPLE TRANSPORTING METHOD AND NON-TRANSITORY STORAGE MEDIUM - A sample processing apparatus comprising: a plurality of testing units arranged along a transport path and each configured to perform at least one type of test; a plurality of transport units configured to collectively constitute the transport path and collectively function to deliver samples to the plurality of testing units for testing; and at least one processor of a computer system and at least one memory that stores programs executable by the at least one processor to: (a) determine a type of test required to be performed on a sample; (b) if a trouble of a transport unit is reported, determine whether there is an available testing unit performable of the required type of test to which the sample is deliverable; (c) if there is the available testing unit, instruct to transport the sample to the available testing unit. | 2011-10-06 |
20110244583 | SAMPLE RACK TRANSPORT SYSTEM AND SAMPLE RACK TRANSPORT METHOD - A sample rack transport system comprising: a plurality of transport apparatuses which are connected so as to transport a sample rack to a plurality of sample processing apparatuses; and a control apparatus which communicates with the plurality of transport apparatuses and controls the transport of the sample rack by the plurality of transport apparatuses, wherein at least one of the plurality of transport apparatuses includes a transmission switch which is operated by a user to transmit a signal to the control apparatus, and when the transport of the sample rack has stopped due to a trouble which occurred in one of the plurality of transport apparatuses, responsive to an operation of a transmission switch of another transport apparatus, the control apparatus restarts the transport of the sample rack by the plurality of transport apparatuses. Also, a method for transporting a sample rack. | 2011-10-06 |
20110244584 | APPARATUS AND METHODS FOR DIAGNOSING RENAL DISORDERS - The present invention provides a system comprising an array of chemically sensitive sensors based on coated single walled carbon nanotubes, for measuring volatile organic compounds indicative of renal failure. Methods of breath analysis for diagnosing chronic, acute and end-stage renal failure are disclosed. | 2011-10-06 |
20110244585 | CHEMICAL SENSORS CONTAINING CARBON NANOTUBES, METHOD FOR MAKING SAME, AND USES THEROF - A device is disclosed for detecting at least one chemical compound comprising at least one carbon nanotube with several graphene layers, on which is grafted at least one molecule bearing group G1 capable of reacting with the chemical compound or a precursor of such a group G1. The uses and the method of making such a device is also disclosed. | 2011-10-06 |
20110244586 | Method for Potentiometric Analysis of Fluoride in Biological Material - The present invention concerns a method for potentiometric analysis of fluoride in biological material, where the biological material is wet extracted and analysed for fluoride content in the same beaker, and where the sample is dissolved in an acid at pH lower than 2. Further, the invention concerns use of the method of analysis of fluorides in aluminium industry and glass-works. | 2011-10-06 |
20110244587 | QUANTIFICATION OF LUBRICANT REACTIVITY USING CONSTANT VOLUME COMBUSTION DEVICE - A method for identifying a lubricant composition that reduces the propensity for knock in an engine. The lubricant composition is mixed with a solvent to reduce the viscosity of the lubricant composition, thereby forming a lubricant-solvent mixture having a viscosity similar to or less than that of engine fuel. A sample of a lubricant-solvent mixture is then subjected to a constant volume combustion test to determine the reactivity associated with the lubricant-solvent mixture. The test is repeated for a range of lubricant-solvent ratios, and statistical methods are used to calculate the reactivity of the lubricant composition without solvent. | 2011-10-06 |
20110244588 | OPTICAL DETECTION SYSTEMS AND METHODS OF MAKING AND USING THE SAME - An optical sensing device is provided. The device comprises a cavity defined by at least an anomalous reflective element having an anomalous reflection surface, and a non-absorptive element having a non-absorptive reflection surface disposed in a direction away from the anomalous reflection surface. | 2011-10-06 |
20110244589 | IN-VIVO PLATELET FUNCTION TEST BY ONLINE BLEEDING VOLUME MEASUREMENT - A method for remotely determining a patient's excessive bleeding tendency and a patient's resistance to blood thinning medication is disclosed. An incision is made in the patient's forearm. Blood oozing out of the incision is absorbed into a blotter paper until the bleeding stops. Blotches of blood formed on the blotter paper are captured as an image and sent to a service provider who calculates a value associated with the bleeding volume of the patient. The service provider retransmits a value associated with the bleeding volume back to the medical professional. To determine the resistance to blood thinning medication, one incision is made in the patient prior to administration of blood thinning medication. Blood oozing out of the incision is collected on blotter paper until the patient stops bleeding. A second incision is made in the patient. A second set of blotter paper is used to collect the blood oozing out of the incision until the bleeding stops. Both sets of blotter paper are sent to a service provider to calculate a value associated with the difference in bleeding volume. The service provider then retransmits the value associated with the difference in bleeding volume to the medical professional. | 2011-10-06 |
20110244590 | ANALYSIS APPARATUS AND METHOD - A coloration state of a test region is read out as image density values by a readout device. A calculation is made to find a similarity degree between template information for the test region, which template information represents a state of coloration of the test region, and which has been stored previously in a pattern storing device, and the coloration state of the test region, which coloration state has been read out by the readout device. An analysis of an analyte is performed by a judgment device in accordance with the similarity degree, which has been calculated. | 2011-10-06 |
20110244591 | COLORATION ANALYZING APPARATUS AND METHOD - Viscosity of a test body solution spotted onto a test piece is detected. The test piece has an insoluble support, through which the test body solution is developed, and a test region formed on the insoluble support, the test region reacting with an analyte in the test body solution and undergoing coloration. A washing liquid is fed to the test region and its neighboring regions at the time between a stage, at which the test body solution has been developed through the test region, and a stage, at which a liquid for amplifying the coloration state of the test region is fed to the test piece, such that the quantity of the washing liquid fed to the test region and its neighboring regions is set to be large as the detected viscosity becomes high. | 2011-10-06 |
20110244592 | OPTOCHEMICAL SENSOR ACTIVE ELEMENT, METHOD OF ITS PREPARATION AND USE - An optochemical sensor element suitable for sensing an analyte comprises a polymeric material in which at least a portion of the polymer material is solvent crazed to provide a multiplicity of pores of controlled nanometer size, and an indicator dye impregnated into the pores, in which optochemical sensor element the indicator dye is a long-decay photoluminescent dye selected from the group consisting of: phosphorescent platinum(II)—and palladium (II) complexes of porphyrin dyes such as octaethylporphine, coproporphyrin, octaethylporphine -ketone, benzoporphine, tetra (pentafluorophenyl) porphine, chlorin e6; fluorescent complexes of ruthenium (II), osmium(II), iridium(III) and europium (III); or derivatives or close analogs of these dyes. The sensor element in the presence of the analyte alters a photoluminescence parameter thus allowing sensing and/or quantification of the analyte. | 2011-10-06 |
20110244593 | METHOD AND APPARATUS FOR SELECTIVELY ADMIXING REAGENTS IN A SUBSTANTIALLY UNDILUTED BIOLOGIC FLUID SAMPLE ANALYSIS - A biologic fluid sample analysis method and system is provided that includes a reagent depository, and analysis chamber, a biologic fluid transfer system, and a programmable analyzer. The reagent depository has a plurality of reagent deposits, and each reagent deposit located at a position within the depository independent of the other reagent deposits. The analysis chamber is adapted to quiescently hold a biologic fluid sample and one or more reagents during analysis. The biologic fluid transfer system has at least one fluid transfer device. The programmable analyzer is adapted to control the biologic fluid transfer system to acquire a volume of sample from a sample reservoir, dispense a volume of the sample into the reagent depository, acquire a volume of sample and reagent from the reagent depository, and to transfer the sample and reagent to the analysis chamber, and to analyze the combined sample and reagent. | 2011-10-06 |
20110244594 | TARGET SUBSTANCE DETECTING METHOD AND TARGET SUBSTANCE DETECTING APPARATUS - A target substance detecting method employs a detecting chip equipped with a fine flow channel. Examinations, in which clogging of the flow channel and inhibition of immune reactions can be easily and expediently prevented without preliminary processes, are enabled to be performed without fluctuations in hemolysis rates. The detecting chip having a flow channel base having the flow channel and a detecting portion formed in the flow channel is employed. A liquid sample that may contain a target substance and contains cellular non target substances is caused to flow into the flow channel. An ultrasonic wave emitting section provided upstream of the detecting portion emits ultrasonic waves into the liquid sample from a direction perpendicular to the longitudinal direction of the flow channel such that a standing wave is generated within the flow channel. | 2011-10-06 |
20110244595 | BIOMEDICAL CHIP FOR BLOOD COAGULATION TEST, METHOD OF PRODUCTION AND USE THEREOF - In a biomedical chip for blood coagulation tests and its manufacturing method and use, the biomedical chip comprises a substrate layer, a middle layer, and a cap layer, engaged and stacked with each other to define a microfluidic channel which has a first inlet and an outlet of the microfluidic channel respectively. A mixing interval is expanded outward from the microfluidic channel and interconnected to a second inlet, and has an interconnect portion and a capillary portion disposed between the substrate layer and the cap layer, and more specifically disposed around the periphery of the interconnect portion. With the biomedical chip having the substrate layer and cap layer made of a hydrophilic material, the blood and the reagent can be driven automatically by the capillary force of the microfluidic channel to flow and mix with each other, and the hydrophilic capillary force can be permanently maintained. | 2011-10-06 |
20110244596 | PULSED MAGNETIC ACTUATION FOR SENSITIVE ASSAYS - A method for controlling the movement of magnetic or magnetizable objects ( | 2011-10-06 |
20110244597 | IMMUNOCHROMATOGRAPHIC MEDIUM AND IMMUNOCHROMATOGRAPHIC METHOD - Disclosed are an immunochromatographic medium and an immunochromatographic method in which, even when plural items exceeding four items are detected which are the number of colors that can be detected by colored latex particles, the plural items can be detected and quantified simultaneously. The immunochromatographic medium comprises a support, a label-attached reagent immobilized on a labeling agent, and detection portions on which a material capable of combining with a substance to be detected in a sample is immobilized, the label-attached reagent and the detection portions being provided on the support, featured in that the labeling agent is a phosphor nanoparticle and the detection portions are shaped in the form of dots. | 2011-10-06 |
20110244598 | Test Element Having Combined Control and Calibration Zone - A test element, for example in the form of an immunological test strip functioning according to the sandwich principle, for the fluorophoric detection of one or more analytes in a sample comprising an analyte detection zone and a combined control and calibration zone. The combined control and calibration zone include a fluorophore and binding partners for the specific binding of reagents labelled with a fluorophore. Furthermore, the invention concerns a method for calibrating an analyte-specific measurement signal, a method for determining the concentration of an analyte in a sample and the use of the test element for calibrating a signal generated in the analyte detection zone of a test element. | 2011-10-06 |
20110244599 | PROCESS INTEGRATION OF A SINGLE CHIP THREE AXIS MAGNETIC FIELD SENSOR - A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane. | 2011-10-06 |
20110244600 | METHOD FOR TUNABLY REPAIRING LOW-K DIELECTRIC DAMAGE - A method for providing a tuned repair for damage to a silicon based low-k dielectric layer with organic compounds, where damage replaces a methyl attached to silicon with a hydroxyl attached to silicon is provided. A precursor gas is provided, comprising a first repair agent represented as Si—(R) | 2011-10-06 |
20110244601 | METHOD FOR PRODUCING A SUBSTRATE INCLUDING A STEP OF THINNING WITH STOP WHEN A POROUS ZONE IS DETECTED - A method for producing a substrate including a step of thinning the thickness of the substrate is disclosed. The method is characterized in that it includes the following steps: the formation of a porous zone in an inner layer of the substrate; the progressive thinning of the thickness of the substrate towards the inner layer including a porous zone; the completion of the progressive thinning by polishing; and a controlled stoppage of polishing upon detection of the porous zone. | 2011-10-06 |
20110244602 | METHOD OF PRODUCING SEMICONDUCTOR - In a conventional SGT production method, during dry etching for forming a pillar-shaped silicon layer and a gate electrode, an etching amount cannot be controlled using an end-point detection process, which causes difficulty in producing an SGT while stabilizing a height dimension of the pillar-shaped silicon layer, and a gate length. In an SGT production method of the present invention, a hard mask for use in dry etching for forming a pillar-shaped silicon layer is formed in a layered structure comprising a first hard mask and a second hard mask, to allow the end-point detection process to be used during the dry etching for the pillar-shaped silicon layer. In addition, a gate conductive film for use in dry etching for forming a gate electrode is formed in a layered structure comprising a first gate conductive film and a second gate conductive film, to allow the end-point detection process to be used during the dry etching for the gate electrode. | 2011-10-06 |
20110244603 | CUSTOMIZED METALLIZATION PATTERNS DURING FABRICATION OF SEMICONDUCTOR DEVICES - Embodiments of the invention are directed to a system and method of depositing material on a polycrystalline semiconductor substrate. The method may comprise detecting characteristics of polycrystalline semiconductor substrate, generating image data of a customized pattern of lines based on the characteristics of the substrate and depositing material from one or more nozzles on the substrate according to the image data of the customized pattern. The characteristics may include grain boundaries of the substrate and spatial variations in sheet resistance and/or the minority carrier lifetime of the substrate. | 2011-10-06 |
20110244604 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor wafer having IGBT elements and transistors formed on a surface thereof is prepared. Electron beams are emitted all over the surface of the semiconductor wafer. Recombination centers are formed in the IGBT elements and the transistors. ON voltages of the transistors are measured by a measurement device, and lifetimes defined in the IGBT elements and the transistors are recovered by a prescribed annealing treatment. When the lifetimes are recovered, a control device controls an annealing treatment amount in the annealing treatment based on the measured ON voltages of the transistors such that ON voltages of the IGBT elements are each equal to a desired ON voltage. Variations in the ON voltages of a plurality of IGBT elements obtained from the semiconductor wafer are reduced. | 2011-10-06 |
20110244605 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - According to one embodiment, a method of fabricating a semiconductor device, including forming semiconductor chips having a test circuit electrically connected to an input pad and an output pad, the input pad having a first pad located on a first principal surface and a second pad located on a second principal surface of the semiconductor wafer, placing the semiconductor wafers on an inspection apparatus, each input pad brought into contact with each input pad adjacent semiconductor wafer, bringing each of probing tips on the input pad of the semiconductor chips of an uppermost or lowermost semiconductor wafer in the semiconductor wafers and performing a test on the semiconductor chips in one batch. | 2011-10-06 |
20110244606 | CHIP-TYPE LED AND METHOD FOR MANUFACTURING THE SAME - In a chip-type LED according to an embodiment of the present invention, a first recess hole for mounting an LED chip and a second recess hole for connecting a fine metal wire are formed in an insulating substrate, a metal sheet serving as a first wiring pattern is formed at a portion that includes the first recess hole, a metal sheet serving as a second wiring pattern is formed at a portion that includes the second recess hole, an LED chip is mounted on the metal sheet within the first recess hole, the LED chip is electrically connected to the metal sheet within the second recess hole via a fine metal wire, the LED chip including the first recess hole and the fine metal wire including the second recess hole are encapsulated in a first transparent resin that contains a fluorescent material, a surface of the insulating substrate including the first transparent resin is encapsulated in a second transparent resin. | 2011-10-06 |
20110244607 | ORGANIC LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed is an organic light emitting device which includes a substrate; a encapsulation substrate, an organic light emitting unit interposed between the substrate and the encapsulation substrate. A water vapor absorption material-containing transparent sealant layer covers the organic light emitting unit. The sealant layer includes a transparent sealant having a water vapor transmission rate (WVTR) of about 20 g/m | 2011-10-06 |
20110244608 | SOLID-STATE LASERS - A method for assembling an optically pumped solid-state laser having an extended cavity. The method includes the steps of providing a casing, mounting a TEC and a base plate in the casing, and mounting a plurality of laser components on the base plate using a UV and heat curing adhesive. Once the laser components are correctly positioned and aligned on the base plate, the adhesive is pre-cured using UV radiation. Final curing of the adhesive is obtained by subjecting the entire laser package to an ambient temperature of at least 100° C. The base plate is preferably selected to have a CTE similar to that of the laser components in order to facilitate the high temperature curing. A preferred material for the base plate is AlSiC. | 2011-10-06 |
20110244609 | METHOD OF FORMING CURRENT-INJECTING/TUNNELING LIGHT-EMITTING DEVICE - An apparatus and method for making same. Some embodiments include a light-emitting device having a light-emitting active region; a tunneling-barrier (TB) structure facing adjacent the active region; a TB grown-epitaxial-metal-mirror (TB-GEMM) structure facing adjacent the TB structure, wherein the TB-GEMM structure includes at least one metal is substantially lattice matched to the active region; and a conductivity-type III-nitride crystal structure adjacent facing the active region opposite the TB structure. In some embodiments, the active region includes an MQW structure. In some embodiments, the TB-GEMM includes an alloy composition such that metal current injectors have a Fermi energy potential substantially equal to the sub-band minimum energy potential of the MQW. Some embodiments further include a second mirror (optionally a GEMM) to form an optical cavity between the second mirror and the TB-GEMM structure. In some embodiments, at least one of the GEMM is deposited on, and lattice matched to, a substrate. | 2011-10-06 |
20110244610 | METHOD FOR PRODUCING GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present invention provides a method for producing a Group III nitride semiconductor light-emitting device whose main surface is a plane that provides an internal electric field of zero, and which exhibits improved light extraction performance. In the production method, one surface of an a-plane sapphire substrate is subjected to dry etching, to thereby form an embossment pattern having a plurality of mesas which are arranged in a honeycomb-dot pattern as viewed from above; and an n-type layer, a light-emitting layer, and a p-type layer, each of which is formed of a Group III nitride semiconductor layer having an m-plane main surface, are sequentially stacked on the surface of the sapphire substrate on which the mesas are formed. Subsequently, a p-electrode is formed on the p-type layer, and the p-electrode is bonded to a support substrate via a metal layer. Next, the sapphire substrate is removed through the laser lift-off process. On the thus-exposed surface of the n-type layer is formed an embossment pattern having dents provided through transfer of the mesas of the embossment pattern of the sapphire substrate. Then, the emboss-patterned surface of the n-type layer is subjected to wet etching, to thereby form numerous etched pits. | 2011-10-06 |
20110244611 | LIGHT EMITTING DEVICE, LIGHT EMITTING SYSTEM HAVING THE SAME, AND FABRICATING METHOD OF THE LIGHT EMITTING DEVICE AND THE LIGHT EMITTING SYSTEM - A semiconductor device includes a first light emitting chip, the first light emitting chip having a first semiconductor layer, a second semiconductor layer, and a first active layer disposed therebetween, a second light emitting chip disposed on the first light emitting chip, the second light emitting chip having a third semiconductor layer, a fourth semiconductor layer, and a second active layer disposed therebetween, and a conductive layer disposed between the first semiconductor layer and the fourth semiconductor layer, the first semiconductor layer and the fourth semiconductor layer having different conductivity types. | 2011-10-06 |
20110244612 | OPTICAL DEVICE WAFER PROCESSING METHOD - An optical device wafer processing method for dividing an optical device wafer into individual optical devices along a plurality of crossing streets formed on the front side of the wafer. The wafer is composed of a substrate and an optical device layer formed on the front side of the substrate. The individual optical devices are respectively formed in a plurality of regions partitioned by the streets. The optical device wafer processing method includes the steps of cutting the back side of the substrate along each street by using a cutting blade to thereby form a first cut groove as a first break start point on the back side of the substrate along each street, cutting the front side of the wafer along each street by using a cutting blade after forming the first cut groove to thereby form a second cut groove as a second break start point on the front side of the wafer along each street so that the second cut groove has a depth reaching the front side of the substrate, and applying an external force to the wafer after forming the second cut groove to thereby break the wafer along each street where the first and second cut grooves are formed, thereby dividing the wafer into the individual optical devices. | 2011-10-06 |
20110244613 | WAFER-LEVEL In-P Si BONDING FOR SILICON PHOTONIC APPARATUS - Wafer-level bonding of the hybrid laser portion of a silicon photonics platform is done by forming a weakened level in a semiconductive pillar that supports laser-active layers by ion implantation into the semiconductive pillar without penetrating the laser-active layers, and by separating the laser-active layers from the semiconductive pillar by cracking the weakened level by an epitaxial lift-off processes. | 2011-10-06 |
20110244614 | METHOD OF MANUFACTURING AN OPTICAL MATRIX DEVICE - According to the method of manufacturing an optical matrix device of this invention, semiconductor films and gate insulating films which influence the characteristics of thin-film transistors most are formed in a vacuum (S | 2011-10-06 |
20110244615 | METHOD FOR MANUFACTURING PIXEL STRUCTURE - A pixel structure includes a scan line, a data line, an active element, a first passivation layer, a second passivation layer and a pixel electrode. The data line includes a first data metal segment and a second data metal layer. The active element includes a gate electrode, an insulating layer, a channel layer, a source and a drain. The channel layer is positioned on the insulating layer above the gate electrode. The source and the drain are positioned on the channel layer. The source is coupled to the data line. The first passivation layer and the second passivation layer cover the active element and form a first contact hole to expose a part of the drain. The second passivation layer covers a part edge of the drain. The pixel electrode is disposed across the second passivation layer and coupled to the drain via the first contact hole. | 2011-10-06 |
20110244616 | VERTICAL STRUCTURE LED CURRENT SPREADING BY IMPLANTED REGIONS - An improved method of fabricating a vertical semiconductor LED is disclosed. Ions are implanted into the LED to create non-conductive regions, which facilitates current spreading in the device. In some embodiments, the non-conductive regions are located in the p-type layer. In other embodiments, the non-conductive layer may be in the multi-quantum well or n-type layer. | 2011-10-06 |
20110244617 | FORMING A COMPOUND-NITRIDE STRUCTURE THAT INCLUDES A NUCLEATION LAYER - The present invention generally provides apparatus and methods for forming LED structures. In one embodiment where a sapphire substrate is selected, the growth of bulk Group III-nitrides may be deposited in a HVPE or MOCVD chamber while a separate processing chamber, such as a PVD, MOCVD, CVD, or ALD chamber, may be used to grow buffer layers on the sapphire substrate at lower growth rate. The buffer layer may be GaN, AlN, AlGaN, InGaN, or InAlGaN. In another embodiment where a silicon-based substrate is selected, the growth of bulk Group III-nitrides may be deposited in a HVPE or MOCVD chamber in which an Al-free environment is provided while a separate processing chamber with a Ga-free environment is used to grow a Ga-free buffer layer, such as Al, AlN, or SiN, on the silicon-based substrate. The separate processing chamber may be a PVD, CVD, MOCVD, a plasma assisted MOCVD, or other vapor phase deposition techniques. | 2011-10-06 |
20110244618 | METHOD FOR MANUFACTURING PHOTOVOLTAIC DEVICE INCLUDING FLEXIBLE OR INFLEXIBLE SUBSTRATE - Disclosed is a method for manufacturing a photovoltaic device including: a forming the first sub-layer including impurity by allowing first flow rate values of the source gas introduced into one group of a first group consisting of odd numbered process chambers and a second group consisting of even numbered process chambers to be maintained constant in each of the process chambers of the one group; and a forming the second sub-layer including impurity by allowing second flow rate values of the source gas introduced into the other group of the first group and the second group to be maintained constant in each of the process chambers of the other group, wherein the second flow rate values are less than the first flow rate values. | 2011-10-06 |
20110244619 | METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE - A solid-state imaging device with an improved heat release-ability for releasing a heat generated in the amplifier unit of the solid-state image sensing element. The solid-state imaging device | 2011-10-06 |
20110244620 | Methods Of Forming A Conductive Transparent Oxide Film Layer For Use In A Cadmium Telluride Based Thin Film Photovoltaic Device - Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate at a sputtering temperature from about 50° C. to about 250° C., and annealing the transparent conductive oxide layer at an anneal temperature of about 450° C. to about 650° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. | 2011-10-06 |
20110244621 | METHODS OF FORMING A CONDUCTIVE TRANSPARENT OXIDE FILM LAYER FOR USE IN A CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICE - Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer on a substrate from a target (e.g., including cadmium stannate) in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. | 2011-10-06 |
20110244622 | METHODS OF FORMING A CONDUCTIVE TRANSPARENT OXIDE FILM LAYER FOR USE IN A CADMIUM TELLURIDE BASED THIN FILM PHOTOVOLTAIC DEVICE - Methods are generally provided for forming a conductive oxide layer on a substrate. In one particular embodiment, the method can include sputtering a transparent conductive oxide layer (e.g., including cadmium stannate) on a substrate from a target in a sputtering atmosphere comprising cadmium. The transparent conductive oxide layer can be sputtered at a sputtering temperature greater of about 100° C. to about 600° C. Methods are also generally provided for manufacturing a cadmium telluride based thin film photovoltaic device. | 2011-10-06 |
20110244623 | RAPID THERMAL METHOD AND DEVICE FOR THIN FILM TANDEM CELL - A method for forming a thin film photovoltaic device. The method includes providing a transparent substrate comprising a surface region. A first transparent electrode layer is formed overlying the surface region. A multilayered structure including a copper material and an indium material is formed overlying a electrode surface region. The multilayered structure is subjected to a plurality of sulfur bearing entities during a rapid thermal process to form an absorber material comprising a copper entity, an indium entity, and a sulfur entity. The rapid thermal process uses a ramp time ranging from about 10 Degrees Celsius/second to about 50 Degrees Celsius/second. In a specific embodiment, the first transparent electrode layer is maintained to a sheet resistance of less than or equal to about 10 Ohms/square centimeters and an optical transmission of 90 percent and greater | 2011-10-06 |
20110244624 | Production Method of Photoelectric Conversion Device and Solution for Forming Semiconductor - The production method of a photoelectric conversion device comprises the steps of adding a chalcogenide powder of a group-IIIB element to an organic solvent including a single source precursor containing a group-IB element, a group-IIIB element, and a chalcogen element to prepare a solution for forming a semiconductor, and forming a semiconductor containing a group-I-III-VI compound by use of the solution for forming a semiconductor. | 2011-10-06 |
20110244625 | Continuously Optimized Solar Cell Metallization Design through Feed-Forward Process - An improved, lower cost method of processing substrates, such as to create solar cells, is disclosed. The doped regions are created on the substrate, using a mask or without the use of lithography or masks. After the implantation is complete, visual recognition is used to determine the exact region that was implanted. This information can then be used by subsequent process steps to crate a suitable metallization layer and provide alignment information. These techniques can also be used in other ion implanter applications. In another aspect, a dot pattern selective emitter is created and imaging is used to determine the appropriate metallization layer. | 2011-10-06 |
20110244626 | METHOD OF FORMING SOLAR CELL - A method of forming solar cell includes the following steps. A substrate having a first region and a second region is provided. A dopant source layer is then formed on the substrate. A laser beam is used to locally irradiate the dopant source layer corresponding to the first region to locally diffuse the dopants of the dopant source layer on the first region downward into the substrate. The laser beam also changes the surface property of the substrate in the first region to form a visible patterned mark. The dopant source layer is then removed, and a patterned electrode is formed on the first region of the substrate using the visible patterned mark as an alignment mark. | 2011-10-06 |
20110244627 | METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - In a method of manufacturing a photoelectric conversion device having a pixel region and a peripheral circuit region, a semiconductor compound layer is formed by causing a surface of a diffusion layer or gate electrode of a MOS transistor in the peripheral circuit region to react with a high melting point metal, then an insulating layer is formed in the pixel region and the peripheral circuit region after the step of forming a semiconductor compound layer. A contact hole is formed in the insulating layer to expose a diffusion layer in the pixel region, and a contact hole is formed in the insulating layer to expose the semiconductor compound layer formed in the peripheral circuit region. These holes are formed at different timings. Prior to forming the hole which is formed later, a contact plug is formed in the contact hole which is formed earlier. | 2011-10-06 |
20110244628 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes: supplying a supercritical fluid mixed with an under-fill material to a stacked unit, which has a plurality of stacked semiconductor chips; and filling the under-fill material in the space between the plurality of the semiconductor chips, by heating the stacked unit placed in the inside of the high-pressure vessel and curing the under-fill material flowing in the space between the plurality of the semiconductor chips by a polymerization reaction, while the supercritical fluid is being supplied. | 2011-10-06 |
20110244629 | Packaging Process to Create Wettable Lead Flank During Board Assembly - A method and apparatus are described for fabricating a low-pin-count chip package ( | 2011-10-06 |
20110244630 | Method of Substrate Bonding with Bonding Material Having Rare Earth Metal - A microchip has a bonding material that bonds a first substrate to a second substrate. The bonding material has, among other things, a rare earth metal and other material. | 2011-10-06 |
20110244631 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, AND WIRING BOARD - In a semiconductor device manufacturing method, a semiconductor chip is mounted on a support board so as to expose a side of the semiconductor chip on which a plurality of terminal electrodes are provided. An insulating layer is formed so as to cover the side of the semiconductor chip on which the terminal electrodes are provided. Through electrodes connecting to the terminal electrodes and piercing the insulating layer are formed. Metal wirings connecting to the through electrodes are formed on the insulating layer. External terminal electrodes connecting the metal wiring are formed. Second spacing, spacing between the adjacent external terminal electrodes, is larger than first spacing, spacing between the adjacent terminal electrodes. | 2011-10-06 |
20110244632 | Reduction of Mechanical Stress in Metal Stacks of Sophisticated Semiconductor Devices During Die-Substrate Soldering by an Enhanced Cool Down Regime - In a reflow process for connecting a semiconductor die and a package substrate, the temperature gradient and thus the thermally induced mechanical forces in a sensitive metallization system of the semiconductor die may be reduced during the cooling phase. To this end, one or more heating intervals may be introduced into the cooling phase, thereby efficiently reducing the temperature difference. In other cases, the central region may additionally be cooled by providing appropriate locally restricted mechanisms, such as a locally restricted gas flow and the like. Consequently, desired short overall process times may be obtain without contributing to increased yield losses when processing sophisticated metallization systems on the basis of a lead-free contact regime. | 2011-10-06 |
20110244633 | PACKAGE ASSEMBLY FOR SEMICONDUCTOR DEVICES - Semiconductor packages and methods for making and using such semiconductor packages are described. The semiconductor packages contain a dual gauge heat sink exposed on an upper part of the package, a leadframe containing a gate lead and an exposed drain pad on a lower part of the package, and a semiconductor die containing an IC device located between the heat sink and the leadframe. The gate of the IC device is connected to the gate lead of the leadframe using a bond interconnect wire or a gate interconnect clip located and placed under the heat sink and in between the heat sink and main leadframe. Such a configuration provides both a simple design for the semiconductor package and a simple method of manufacturing. Other embodiments are described. | 2011-10-06 |
20110244634 | SEMICONDUCTOR PACKAGE AND METHODS OF MANUFACTURING THE SAME - A semiconductor package and a method of manufacturing the semiconductor package. The semiconductor package includes a first package that a first semiconductor chip is mounted on a front side of a first substrate and a redistributed pad including a first redistributed pad electrically connected to the first substrate and a second redistributed pad electrically connected to the first redistributed pad is disposed on the first semiconductor chip and a second package that a second semiconductor chip is mounted on a front side of a second substrate, the second package including a connection member electrically connected to the second redistributed pad. The connection member electrically connected to the redistributed pad electrically connects the first and second packages to each other. | 2011-10-06 |
20110244635 | METHOD FOR MANUFACTURE OF INLINE INTEGRATED CIRCUIT SYSTEM - A method for manufacture of an integrated circuit package system includes: providing a leadframe with an integrated circuit mounted thereover; encapsulating the integrated circuit with an encapsulation; mounting an etch barrier below the leadframe; and etching the leadframe. | 2011-10-06 |
20110244636 | MANUFACTURING METHOD OF SEMICONDUCTOR CHIP-EMBEDDED WIRING SUBSTRATE - With respect to a substrate including a first film, on a surface of which a pad is formed, a second film made of thermoplastic resin is a thermal compression bonded to a pad formation surface of the substrate. A stud bump formed on a semiconductor chip is stuffed into the second film while melting the second film and is pressure welded to the pad by application of pressure and heat. The melted second film seals between the semiconductor chip and the substrate. Then, multiple resin films are stacked with the substrate and the second film to form a stacked body. In a pressurizing and heating process, the multiple resin films, the substrate and the second film are integrated at one time so that the stud bump is bonded to the pad. | 2011-10-06 |
20110244637 | MOLD AND SUBSTRATE FOR USE WITH MOLD | 2011-10-06 |
20110244638 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device manufacturing method is a method of forming a semiconductor device that includes a cell part that includes plural transistor cells in each of which a gate of a trench type is formed in a semiconductor layer, and diffused layers are formed on both sides of the gate, and a guard ring part that surrounds the cell part. The semiconductor device manufacturing method includes forming an interlayer dielectric film on a surface of the semiconductor layer in which the gate and the diffused layers are formed; reducing a thickness of the interlayer dielectric film formed in the cell part through etch back; forming a contact part having a shape of a hole or a groove in the interlayer dielectric film at a position above the diffused layer; and forming a metal film on the interlayer dialectic film. | 2011-10-06 |
20110244639 | METHOD FOR MANUFACTURING A PATTERN FORMED BODY, METHOD FOR MANUFACTURING A FUNCTIONAL ELEMENT, AND METHOD FOR MANUFACTURING A SEMICONDUCTOR ELEMENT - A main object of the present invention is to disclose a manufacturing method of the pattern formed body capable of attaining patterning efficiently with a high precision. To attain the object, the present invention provides a method comprising: a photoresist pattern formation step of forming a photoresist pattern on a hydrophobic layer formed on a substrate and having a surface exhibiting hydrophobicity; a hydrophilicity imparting step of radiating an energy onto the surface of the hydrophobic layer on which the photoresist pattern is formed, thereby making the surface hydrophilic to form hydrophilic areas; and a photoresist pattern peeling step of peeling the photoresist pattern and forming a hydrophilic/hydrophobic pattern on the hydrophobic layer surface, in which the hydrophilic area and hydrophobic area covered previously with the photoresist pattern in the hydrophilicity imparting step are formed in a pattern form. | 2011-10-06 |
20110244640 | METHOD OF MANUFACTURING FLASH MEMORY CELL - A method of manufacturing a flash memory cell includes providing a substrate having a first dielectric layer formed thereon, forming a control gate on the first dielectric layer, forming an oxide-nitride-oxide (ONO) spacer on sidewalls of the control gate, forming a second dielectric layer on the substrate at two sides of the ONO spacer, and forming a floating gate at outer sides of the ONO spacer on the second dielectric layer, respectively. | 2011-10-06 |
20110244641 | Shielded Gate Trench FET with an Inter-electrode Dielectric Having a Low-k Dielectric Therein - A method for forming a shielded gate trench field effect transistor (FET) includes forming trenches in a semiconductor region, forming a shield electrode in a bottom portion of each trench, and forming an inter-electrode dielectric (IED) extending over the shield electrode. The IED may comprise a low-k dielectric. The method also includes forming a gate electrode in an upper portion of each trench over the IED. | 2011-10-06 |
20110244642 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device utilizes a substrate including a high voltage circuit area, a medium voltage circuit area and a low voltage circuit area. A first well of a first conductivity type is formed. Two separate second wells of a second conductivity type are formed in the first well and two separate isolation structures are formed respectively in the second wells in each of the high voltage circuit area and the medium voltage circuit area. A first gate dielectric layer is formed in the high voltage circuit area. A second gate dielectric layer that is thinner than the first gate dielectric layer is formed in each of the medium voltage circuit area and the low voltage circuit area. A gate is formed. Two source and drain regions of the second conductivity type are respectively formed. The method is simple and low-cost and meets the market requirement. | 2011-10-06 |
20110244643 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A manufacturing method of a silicon carbide semiconductor device in which an electric field applied to a gate oxide film can be relaxed and thereby reliability can be ensured, and by the method manufacturing costs can be reduced. Well regions, channel regions, and gate electrodes are formed so that, given that extending lengths, with respect to the inner sides of source regions, of each of the well regions, the channel regions, and the gate electrodes are Lwell, Lch, and Lg, respectively, a relationship of Lch2011-10-06 | |
20110244644 | Two Step Poly Etch LDMOS Gate Formation - A method of making a transistor includes etching a first side of a gate, the gate including an oxide layer formed over a substrate and a conductive material formed over the oxide layer, the etching removing a first portion of the conductive material, implanting an impurity region into the substrate such that the impurity region is self-aligned, and etching a second side of the gate to remove a second portion of the conductive material. | 2011-10-06 |
20110244645 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes: a semiconductor substrate in which a trench is formed; a source region and a drain region each of which is buried in the trench and contains an impurity of the same conductive type; a semiconductor FIN buried in the trench and provided between the source and drain regions; a gate insulating film provided on a side surface of the semiconductor FIN as well as the upper surface of the semiconductor FIN; and a gate electrode formed on the gate insulating film. | 2011-10-06 |
20110244646 | SEMICONDUCTOR WITH A DYNAMIC GATE-DRAIN CAPACITANCE - A semiconductor device with a dynamic gate drain capacitance. One embodiment provides a semiconductor device. The device includes a semiconductor substrate, a field effect transistor structure including a source region, a first body region, a drain region, a gate electrode structure and a gate insulating layer. The gate insulating layer is arranged between the gate electrode structure and the body region. The gate electrode structure and the drain region partially form a capacitor structure including a gate-drain capacitance configured to dynamically change with varying reverse voltages applied between the source and drain regions. The gate-drain capacitance includes at least one local maximum at a given threshold or a plateau-like course at given reverse voltage. | 2011-10-06 |
20110244647 | Mark Structure for Coarse Wafer Alignment and Method for Manufacturing Such a Mark Structure - A method for forming a mark structure on a substrate comprising a plurality of lines. The lines extend parallel to each other in a first direction and are arranged with a pitch between each pair of lines that is directed in a second direction perpendicular to the first direction. The pitch between each pair of selected lines differs from the pitch between each other pair of selected lines. | 2011-10-06 |
20110244648 | Method of Manufacturing Nonvolatile Memory Device - In one embodiment of a method of manufacturing a nonvolatile memory device, a tunnel insulating layer and a charge trap layer are first formed over a semiconductor substrate that defines active regions and isolation regions. The tunnel insulating layer, the charge trap layer, and the semiconductor substrate formed in the isolation regions are etched to form trenches for isolation in the respective isolation regions. The trenches for isolation are filled with an insulating layer to form isolation layers in the respective trenches. A lower passivation layer is formed over an entire surface including top surfaces of the isolation layers. A first oxide layer is formed over an entire surface including the lower passivation layer. Meta-stable bond structures within the lower passivation layer are changed to stable bonds. A nitride layer, a second oxide layer, and an upper passivation layer are sequentially formed over an entire surface including the first oxide layer. | 2011-10-06 |