40th week of 2011 patent applcation highlights part 17 |
Patent application number | Title | Published |
20110240946 | Graphene Memristor Having Modulated Graphene Interlayer Conduction - A graphene memristor includes a first electrode, a second electrode electrically coupled to the first electrode, an active region interspersed between the first and second electrodes, a defective graphene structure that modulates a barrier height to migration of ions through the active region, fast diffusing ions that migrate under the influence an electric field to change a state of the graphene memristor, and a source that generates the electric field. | 2011-10-06 |
20110240947 | Defective Graphene-Based Memristor - A graphene-based memristor includes a first electrode, a defective graphene layer adjacent the first electrode, a memristive material that includes a number of ions adjacent the defective graphene layer, a second electrode adjacent the memristive material, and a voltage source that generates an electric field between the first and the second electrodes. Under the influence of the electric field, ions in the memristive material form an ion conducting channel between the second electrode and the defective graphene layer. | 2011-10-06 |
20110240948 | MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A memory device includes: a memory layer that is isolated for each memory cell and stores information by a variation of a resistance value; an ion source layer that is formed to be isolated for each memory cell and to be laminated on the memory layer, and contains at least one kind of element selected from Cu, Ag, Zn, Al and Zr and at least one kind of element selected from Te, S and Se; an insulation layer that isolates the memory layer and the ion source layer for each memory cell; and a diffusion preventing barrier that is provided at a periphery of the memory layer and the ion source layer of each memory cell to prevent the diffusion of the element. | 2011-10-06 |
20110240949 | INFORMATION RECORDING DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, an information recording device includes first and second electrodes, a variable resistance layer between the first and second electrodes, and a control circuit which controls the variable resistance layer to n (n is a natural number except 1) kinds of resistance. The variable resistance layer comprises a material filled between the first and second electrodes, and particles arranged in a first direction from the first electrode to the second electrode in the material, and each of the particles has a resistance lower than that of the material. A resistance of the variable resistance layer is decided by a short between the first electrode and at least one of the particles. | 2011-10-06 |
20110240950 | PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A phase-change random access memory device includes a semiconductor substrate, a bottom electrode structure formed on the semiconductor substrate, a cylindrical bottom electrode contact that includes a conductive material layer, which is in contact with the bottom electrode, and a cylindrical phase-change material layer that is in contact with the bottom electrode contact. Therefore, the contact area between the bottom electrode contact and the phase-change material layer can be minimized. | 2011-10-06 |
20110240951 | MEMRISTIVE DEVICE - A memristive device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle. An active region is disposed between the first and second electrodes. The active region has defects therein. Graphene or graphite is disposed between the active region and the first electrode and/or between the active region and the second electrode. | 2011-10-06 |
20110240952 | PROGRAMMABLE CROSSPOINT DEVICE WITH AN INTEGRAL DIODE - A programmable crosspoint device with an integral diode includes a first crossbar, a second crossbar, a metallic interlayer, and a switching oxide layer interposed between the first crossbar and the metallic interlayer. The switching oxide layer has a low resistance state and high resistance state. The programmable crosspoint device also includes an integral diode which is interposed between the second crossbar layer and the metallic interlayer, the integral diode being configured to limit the flow of leakage current through the programmable crosspoint device in one direction. A method for forming a programmable crosspoint device with an integrated diode is also provided. | 2011-10-06 |
20110240953 | INTEGRATED SEMICONDUCTOR NANOWIRE DEVICE - A method of making a semiconductor nanowire device includes providing a plurality of spaced semiconductor nanowires on a growth substrate; applying a dielectric material so that it is disposed between the semiconductor nanowires producing a layer of embedded semiconductor nanowires having a top surface opposed to a bottom surface, wherein the bottom surface is defined by the interface with the growth substrate; depositing a first electrode over the top surface of the layer of embedded semiconductor nanowires so that it is in electrical contact with the semiconductor nanowires; joining the first electrode to a device substrate; removing the growth substrate and exposing the bottom surface of the layer of embedded semiconductor nanowires; and depositing a second electrode on the bottom surface of the layer of embedded semiconductor nanowires so that it is in electrical contact with the semiconductor nanowires. | 2011-10-06 |
20110240954 | SILICON NANOWIRE COMPRISING HIGH DENSITY METAL NANOCLUSTERS AND METHOD OF PREPARING THE SAME - A silicon nanowire includes metal nanoclusters formed on a surface thereof at a high density. The metal nanoclusters improve electrical and optical characteristics of the silicon nanowire, and thus can be usefully used in various electrical devices such as a lithium battery, a solar cell, a bio sensor, a memory device, or the like. | 2011-10-06 |
20110240955 | LED Semiconductor Body and Use of an LED Semiconductor Body - An LED semiconductor body includes a number of at least two radiation-generating active layers. Each active layer has a forward voltage, wherein the number of active layers is adapted to an operating voltage in such a way that the voltage dropped across a series resistor connected in series with the active layers is at most of the same magnitude as a voltage dropped across the LED semiconductor body. The invention furthermore describes various uses of the LED semiconductor body. | 2011-10-06 |
20110240956 | Group III nitride semiconductor light-emitting device - The present invention provides a Group III nitride semiconductor light-emitting device whose main surface is a plane which provides an internal electric field of zero, and which exhibits improved emission performance. The light-emitting device includes a sapphire substrate which has, in a surface thereof, a plurality of dents which are arranged in a stripe pattern as viewed from above; an n-contact layer formed on the dented surface of the sapphire substrate; a light-emitting layer formed on the n-contact layer; an electron blocking layer formed on the light-emitting layer; a p-contact layer formed on the electron blocking layer; a p-electrode; and an n-electrode. The electron blocking layer has a thickness of 2 to 8 nm and is formed of Mg-doped AlGaN having an Al compositional proportion of 20 to 30%. | 2011-10-06 |
20110240957 | Group lll nitride semiconductor light-emitting device - The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission performance without increasing driving voltage. The Group III nitride semiconductor light-emitting device includes at least an n-type-layer-side cladding layer, a light-emitting layer, and a p-type-layer-side cladding layer, each of the layers being formed of a Group III nitride semiconductor. The n-type-layer-side cladding layer is a superlattice layer having a periodic structure including an In | 2011-10-06 |
20110240958 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - A light emitting device according to the embodiment includes a conductive support substrate; a second conductive semiconductor layer on the conductive support substrate; an active layer on the second conductive semiconductor layer; a first conductive semiconductor layer on the active layer, the first conductive semiconductor layer including a GaN layer, an InGaN layer, and a roughness formed with selectively removed the GaN and InGaN layers; and an electrode layer on the first conductive semiconductor layer. | 2011-10-06 |
20110240959 | NANOSTRUCTURED DEVICE - A nanostructured device according to the invention comprises a first group of nanowires protruding from a substrate where each nanowire of the first group of nanowires comprises at least one pn- or p-i-n-junction. A first contact, at least partially encloses and is electrically connected to a first side of the pn- or p-i-n-junction of each nanowire in the first group of nanowires. A second contacting means comprises a second group of nanowires that protrudes from the substrate, and is arranged to provide an electrical connection to a second side of the pn- or p-i-n-junction. | 2011-10-06 |
20110240960 | QUANTUM DOT-WAVELENGTH CONVERTER, MANUFACTURING METHOD OF THE SAME AND LIGHT EMITTING DEVICE INCLUDING THE SAME - There is provided a quantum dot wavelength converter including a quantum dot, which is optically stable without any change in an emission wavelength and improved in emission capability. The quantum dot wavelength converter includes: a wavelength converting part including a quantum dot wavelength-converting excitation light and generating a wavelength-converted light and a dispersive medium dispersing the quantum dot; and a sealer sealing the wavelength converting part. | 2011-10-06 |
20110240961 | LIGHT-EMITTING DEVICES FOR LIQUID CRYSTAL DISPLAYS - Light emitting devices, and related components, processes, systems and methods are disclosed. | 2011-10-06 |
20110240962 | EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND METHOD OF PRODUCING THE SAME - An epitaxial substrate for an electronic device having a Si single crystal substrate, a buffer as an insulating layer formed on the Si single crystal substrate, and a main laminated body formed by plural group III nitride layers epitaxially grown on the buffer, wherein a lateral direction of the epitaxial substrate is defined as an electric current conducting direction. The buffer including at least an initially grown layer in contact with the Si single crystal substrate and a superlattice laminate constituted of a superlattice multilayer structure on the initially grown layer. | 2011-10-06 |
20110240963 | ORGANIC LIGHT-EMITTING DIODE WITH HIGH COLOR RENDERING - An organic light-emitting diode with high color rendering is provided, which comprises: a substrate with a first electrode formed thereon; a first light-emitting region disposed over the first electrode, wherein the first light-emitting region comprises at least one layer of a first light-emitting layer, and the first light-emitting layer comprises at least one first dye respectively; a spacer disposed on the first light-emitting region; a second light-emitting region disposed on the organic spacer, wherein the second light-emitting region comprises at least one layer of a second light-emitting layer, and the second light-emitting layer comprises at least one second dye respectively; and a second electrode disposed over the second light-emitting region. | 2011-10-06 |
20110240964 | Organic light emitting diode display - An organic light emitting diode (OLED) display including a substrate main body; a thin film transistor on the substrate main body; and an organic light emitting diode including a transparent electrode connected with the thin film transistor and being capable of injecting electrons, an organic emission layer on the transparent electrode, and a reflective electrode on the organic emission layer and being capable of injecting holes, wherein the organic emission layer includes an electron injection unit on the transparent electrode, the electron injection unit including an electron injection metal layer, an electron injection layer, and an electron injection dipole layer, and a light emitting unit on the electron injection unit. | 2011-10-06 |
20110240965 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device including an emission layer including one or more emission layer of a red emission layer patterned in a red light-emitting region and a green emission layer patterned in a green light-emitting region and a blue emission layer formed as a common layer, wherein a blue emission is prevented in at least one region of the red light-emitting region and the green light-emitting region by adjusting the HOMO and LUMO levels of a host and a dopant of the green emission layer and/or the red emission layer. | 2011-10-06 |
20110240966 | Organic Electroluminescent Device - An organic electroluminescent device comprising: a substrate; a first electrode disposed over the substrate for injecting charge of a first polarity; a second electrode disposed over the first electrode for injecting charge of a second polarity opposite to said first polarity; an organic light emitting layer disposed between the first and the second electrode; an encapsulant can disposed over, and spaced apart from, the second electrode, defining a cavity therebetween; wherein a plurality of spacers are disposed between the encapsulant can and the second electrode forming multiple sealed cavities between the second electrode and the encapsulant can. | 2011-10-06 |
20110240967 | Organic light emitting diode device - An organic light emitting diode device, including a first electrode, a second electrode facing the first electrode, and a light emitting member disposed between the first electrode and the second electrode, the light emitting member including at least one light emitting unit. At least one of the light emitting units may include a first hole injection layer, a second hole injection layer, a hole transport layer, and an emission layer, and a difference between a HOMO energy level of the first hole injection layer and a LUMO energy level of the second hole injection layer may be smaller than about 0.5 eV. | 2011-10-06 |
20110240968 | Organic light-emitting device - An organic light-emitting device including a substrate; a first electrode on the substrate, the first electrode including a first surface and a second surface opposite to the first surface; an organic layer on the first electrode, the organic layer being adjacent to the first surface of the first electrode; a second electrode on the organic layer, the second electrode including a first surface adjacent to the organic layer and a second surface opposite to the first surface; and a luminescent efficiency improvement layer on at least one of the second surface of the first electrode and the second surface of the second electrode, the luminescent efficiency improvement layer including a condensed-cyclic compound represented by Formula 1, below: | 2011-10-06 |
20110240969 | Organic light-emitting device - An organic light-emitting device including a substrate; a first electrode disposed on the substrate; a second electrode; an organic layer disposed between the first electrode and the second electrode, the organic layer including an emission layer and an electron transport layer, the electron transport layer including an anthracene-based compound and a quinolate-based compound; and at least one first layer disposed between the first electrode and the emission layer, the at least one first layer including a cyano group-containing compound. | 2011-10-06 |
20110240970 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - An organic light-emitting display apparatus is disclosed. The organic light-emitting display apparatus includes a first sub-pixel, a second sub-pixel, and a third sub-pixel, where each of said first, second and third sub-pixels displays a different color, a substrate, a first electrode disposed on the substrate, a second electrode disposed on the first electrode, facing the first electrode, an organic emission layer disposed between the first electrode and the second electrode, including a first organic emission layer, a second organic emission layer, and a third organic emission layer, and an electron acceptor layer disposed between the first electrode and the second electrode configured to contact the organic emission layer, where the first organic emission layer is disposed in the first sub-pixel, the second organic emission layer is disposed in the second sub-pixel, and the third organic emission layer is commonly disposed over the first sub-pixel, the second sub-pixel, and the third sub-pixel, and where the electron acceptor layer is disposed between the first organic emission layer and the third organic emission layer in the first sub-pixel and between the second organic emission layer and the third organic emission layer in the second sub-pixel. | 2011-10-06 |
20110240971 | Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - A light-emitting element that emits light with high luminance and can be driven at low voltage. The light-emitting element includes n (n is a natural number greater than or equal to 2) EL layers between an anode and a cathode, and includes a first layer, a second layer, and a third layer between an m-th (m is a natural number, 1≦m≦n−1) EL layer from the anode and an (m+1)th EL layer. The first layer functions as a charge-generation region, has hole-transport properties, and contains an acceptor substance. The third layer has electron-transport properties and contains an alkali metal or the like. The second layer is formed of a phthalocyanine-based material and is provided between the first layer and the third layer, whereby an injection barrier at the time of injecting electrons generated in the first layer into the m-th EL layer through the third layer can be lowered. | 2011-10-06 |
20110240972 | Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - A light-emitting element which emits light with high luminance and can be driven at low voltage. The light-emitting element includes n (n is a natural number of 2 or more) EL layers between an anode and a cathode, and includes a first layer, a second layer, and a third layer between an m-th (m is a natural number, 1≦m≦n−1) EL layer from the anode and an (m+1)th EL layer. The first layer functions as a charge-generation region, has hole-transport properties, and contains an acceptor substance. The third layer has electron-transport properties and contains an alkali metal or the like. The second layer formed of a metal complex having a metal-oxygen bond and an aromatic ligand is provided between the first and third layers, whereby an injection barrier at the time of injecting electrons generated in the first layer into the m-th EL layer through the third layer can be lowered. | 2011-10-06 |
20110240973 | Annellated Dithiophene Copolymers - Disclosed is an organic semiconductor material, layer or component, comprising a copolymer of the formula | 2011-10-06 |
20110240974 | NOVEL BENZO[b]CHRYSENE COMPOUND AND ORGANIC LIGHT-EMITTING ELEMENT INCLUDING THE SAME - The present invention provides a benzo[b]chrysene compound represented by general formula [1] below and an organic light-emitting element including the compound. | 2011-10-06 |
20110240975 | POLYMER COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A polymer represented by Formula 1 below: | 2011-10-06 |
20110240976 | NOVEL BENZOPYRENE COMPOUND AND ORGANIC LIGHT-EMITTING ELEMENT CONTAINING THE SAME - A benzopyrene compound represented by a general formula [1] below, | 2011-10-06 |
20110240977 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A heterocyclic compound of formula 1 and an organic light-emitting device including an organic layer containing the heterocyclic compound. The heterocyclic compound of Formula 1 may be suitable as a material for an emission layer, an electron transport layer or an electron injection layer of an organic light-emitting device. Due to the inclusion of the heterocylic group in its molecular structure, the heterocyclic compound of Formula 1 may have a high glass transition temperature (Tg) or a high melting point, and may prevent crystallization. An organic light-emitting device manufactured using the heterocyclic compound of Formula 1, which has a symmetrical structure in which a chrysene group and an indole group are fused, has excellent durability when stored or operated. | 2011-10-06 |
20110240978 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A heterocyclic compound of formula 1 and an organic light-emitting device including an organic layer containing the heterocyclic compound. The heterocyclic compound of Formula 1 may be suitable as a material for an emission layer, an electron transport layer or an electron injection layer of an organic light-emitting device. Due to the inclusion of the heterocylic group in its molecular structure, the heterocyclic compound of Formula 1 may have a high glass transition temperature (Tg) or a high melting point, and may prevent crystallization. An organic light-emitting device manufactured using the heterocyclic compound of Formula 1, in which a chrysene group and an indole group are fused, has excellent durability when stored or operated. | 2011-10-06 |
20110240979 | CONDENSED-CYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A condensed-cyclic compound and an OLED including the same, the condensed-cyclic compound represented by Formula 1 below: | 2011-10-06 |
20110240980 | n-Type Doped Organic Materials and Methods Therefor - In accordance with various embodiments, an organic electronic device includes an n-type dopant material including an imidazole-based material having a hydrogen-based material bonded between nitrogen atoms. The n-type dopant material n-dopes an organic material, and can be used to mitigate degradation in mobility due to conditions such as exposure to ambient atmosphere, which can effect an undesirable reduction in charge transport. Other embodiments are directed to carbon nanotubes or graphene structures with this type of n-type dopant, wherein the Fermi level for the carbon nanotubes or graphene structures is below −2.5 eV to effect such n-type doping. | 2011-10-06 |
20110240981 | DIKETOPYRROLOPYRROLE POLYMERS FOR USE IN ORGANIC FIELD EFFECT TRANSISTORS - The present invention relates to polymers comprising a repeating unit of the formula I, or III and their use as organic semiconductor in organic devices, especially an organic field effect transistor (OFET), or a device containing a diode and/or an organic field effect transistor. The polymers according to the invention have excellent solubility in organic solvents and excellent film-forming properties. In addition, high efficiency of energy conversion, excellent field-effect mobility, good on/off current ratios and/or excellent stability can be observed, when the polymers according to the invention are used in organic field effect transistors. | 2011-10-06 |
20110240982 | BENZOINDENOCHRYSENE COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE USING THE SAME - An organic light-emitting device has light emission with high efficiency, high luminance and good color purity, and durability. An organic light-emitting device includes an anode, a cathode and an organic compound layer disposed between the anode and the cathode, wherein at least one layer of the organic compound layer includes at least one kind of the benzoindenochrysene compound represented by the general formula (1) in which X | 2011-10-06 |
20110240983 | TRIAZINE COMPOUND AND ORGANIC LIGHT EMITTING DEVICE USING THE SAME - Provided is an organic light emitting device having a long continuous driving lifetime. The organic light emitting device includes an anode, a cathode, and an organic compound layer which is sandwiched between the anode and the cathode, in which: one of the anode and the cathode is transparent or semi-transparent; and the organic compound layer contains at least one kind of triazine compound represented by the following general formula (1): | 2011-10-06 |
20110240984 | OLED STABILITY VIA DOPED HOLE TRANSPORT LAYER - An organic light emitting device is provided. The device includes an anode and a cathode. A first organic layer is disposed between the anode and the cathode. The first organic layer is an emissive layer that includes a first organic emitting material. The device also includes a second organic layer disposed between the anode and the first organic layer. The second organic layer is a non-emissive layer. The second organic layer includes an organic small molecule hole transport material having a concentration of 50 to 99 wt %, and an organic small molecule electron transport material having a concentration of 0.1 to 5 wt %. Other materials may be present. | 2011-10-06 |
20110240985 | ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE HAVING THE ORGANIC THIN FILM TRANSISTOR - There have been problems in that a dedicated apparatus is needed for a conventional method of manufacturing an organic thin film transistor and in that: a little amount of an organic semiconductor film is formed with respect to a usage amount of a material; and most of the used material is discarded. Further, apparatus maintenance such as cleaning of the inside of an apparatus cup or chamber has needed to be frequently carried out in order to remove the contamination resulting from the material that is wastefully discarded. Therefore, a great cost for materials and man-hours for maintenance of apparatus have been required. In the present invention, a uniform organic semiconductor film is formed by forming an aperture between a first substrate for forming the organic semiconductor film and a second substrate used for injection with an insulating film formed at a specific spot and by injecting an organic semiconductor film material into the aperture due to capillarity to the aperture. The insulating film formed at the specific spot enables formation of the organic semiconductor film with high controllability. Further, the insulating film can also serve as a spacer that holds the aperture, that is, an interval (gap) between the substrates. | 2011-10-06 |
20110240986 | PIXEL STRUCTURE OF ELECTROLUMINESCENT DISPLAY PANEL AND METHOD OF MAKING THE SAME - A pixel structure of an electroluminescent display panel includes a substrate, a first patterned conductive layer, an insulating layer, a second patterned conductive layer, an active layer, a first passivation layer and an electroluminescent device. The first patterned conductive layer includes a gate. The insulating layer, disposed on the substrate and the first patterned conductive layer, has at least a first contact hole partially exposing the gate. The second patterned conductive layer, disposed on the insulating layer, includes a first source, a first drain, and a second drain, where the second drain is electrically connected to the gate through the first contact hole of the insulating layer. | 2011-10-06 |
20110240987 | THIN FILM TRANSISTOR, AND METHOD OF MANUFACTURING THE SAME - A thin film transistor and a method of manufacturing the same are provided. The thin film transistor includes a first gate electrode and an active layer including a crystalline oxide semiconductor which is insulated from the first gate electrode by a first insulating layer and the active layer is arranged to overlap the first gate electrode. A source electrode is formed including at least a portion overlaps the active layer, and a drain electrode is arranged being spaced apart from the source electrode and at least a portion of the drain electrode overlaps the active layer, wherein the source electrode and the drain electrode are insulated from the first gate electrode by the first insulating layer. | 2011-10-06 |
20110240988 | FIELD EFFECT TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND SPUTTERING TARGET - A field effect transistor including: a substrate, and at least gate electrode, a gate insulating film, a semiconductor layer, a protective layer for the semiconductor layer, a source electrode and a drain electrode provided on the substrate, wherein the source electrode and the drain electrode are connected with the semiconductor layer therebetween, the gate insulating film is between the gate electrode and the semiconductor layer, the protective layer is on at least one surface of the semiconductor layer, the semiconductor layer includes an oxide containing In atoms, Sn atoms and Zn atoms, the atomic composition ratio of Zn/(In+Sn+Zn) is 25 atom % or more and 75 atom % or less, and the atomic composition ratio of Sn/(In+Sn+Zn) is less than 50 atom %. | 2011-10-06 |
20110240989 | TRANSPARENT CONDUCTIVE FILM AND PHOTOELECTRIC CONVERION ELEMENT - A transparent conductive film includes: a first conductor layer formed of a first transparent conducting oxide having a first specific resistance; and a second conductor layer that is laminated on the first conductor layer, has a second specific resistance that is equal to or larger than the first specific resistance and equal to or smaller than 1*10 | 2011-10-06 |
20110240990 | SEMICONDUCTOR DEVICE - An object is to stabilize electric characteristics of a semiconductor device including an oxide semiconductor to increase reliability. The semiconductor device includes an insulating film; a first metal oxide film on and in contact with the insulating film; an oxide semiconductor film partly in contact with the first metal oxide film; source and drain electrodes electrically connected to the oxide semiconductor film; a second metal oxide film partly in contact with the oxide semiconductor film; a gate insulating film on and in contact with the second metal oxide film; and a gate electrode over the gate insulating film. | 2011-10-06 |
20110240991 | SEMICONDUCTOR DEVICE - The oxide semiconductor film has the top and bottom surface portions each provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film. An insulating film containing a different constituent from the metal oxide film and the oxide semiconductor film is further formed in contact with a surface of the metal oxide film, which is opposite to the surface in contact with the oxide semiconductor film The oxide semiconductor film used for the active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) by removing impurities such as hydrogen, moisture, a hydroxyl group, and hydride from the oxide semiconductor and supplying oxygen which is a major constituent of the oxide semiconductor and is simultaneously reduced in a step of removing impurities. | 2011-10-06 |
20110240992 | SEMICONDUCTOR DEVICE - A transistor is provided in which the bottom surface portion of an oxide semiconductor film is provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film, and an insulating film containing a different constituent from the metal oxide film and the oxide semiconductor film is formed in contact with a surface of the metal oxide film, which is opposite to the surface in contact with the oxide semiconductor film In addition, the oxide semiconductor film used for the active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) through heat treatment in which impurities such as hydrogen, moisture, hydroxyl, and hydride are removed from the oxide semiconductor and oxygen which is one of main component materials of the oxide semiconductor is supplied and is also reduced in a step of removing impurities. | 2011-10-06 |
20110240993 | SEMICONDUCTOR DEVICE - A transistor is provided in which the top surface portion of an oxide semiconductor film is provided with a metal oxide film containing a constituent similar to that of the oxide semiconductor film, and an insulating film containing a different constituent from the metal oxide film and the oxide semiconductor film is formed in contact with a surface of the metal oxide film, which is opposite to the surface in contact with the oxide semiconductor film. In addition, the oxide semiconductor film used for the active layer of the transistor is an oxide semiconductor film highly purified to be electrically i-type (intrinsic) through heat treatment in which impurities such as hydrogen, moisture, hydroxyl, and hydride are removed from the oxide semiconductor and oxygen which is one of main component materials of the oxide semiconductor is supplied and is also reduced in a step of removing the impurities. | 2011-10-06 |
20110240994 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. A semiconductor device includes an oxide semiconductor film, a source electrode and a drain electrode which are electrically connected to the oxide semiconductor film, a metal oxide film which is partly in contact with the oxide semiconductor film, a gate insulating film which is over and in contact with the metal oxide film, and a gate electrode over the gate insulating film. With such a structure, effect of charge on the oxide semiconductor film can be relaxed; thus, shift of the threshold voltage in the transistor, due to charge trapping at an interface of the oxide semiconductor film, can be suppressed. | 2011-10-06 |
20110240995 | SEMICONDUCTOR DEVICE - As a transistor including an oxide semiconductor film, a transistor in which a metal oxide film containing a constituent similar to that of an oxide semiconductor film is provided between the oxide semiconductor film and a gate insulating film and a gate insulating film containing a constituent different from that of the metal oxide film and that of the oxide semiconductor film is provided to be in contact with the metal oxide film is provided. The oxide semiconductor film used for an active layer of the transistor is a highly purified and electrically i-type (intrinsic) film which is formed by heat treatment through which an impurity such as hydrogen, moisture, a hydroxyl group or a hydride is removed and oxygen which is a main component of the oxide semiconductor and reduced together with the impurity removal step is supplied. | 2011-10-06 |
20110240996 | OPTOELECTRONIC DEVICE AND METHOD FOR PRODUCING THE SAME - Embodiments of this invention disclose optoelectronic devices and their producing methods. The embodiments employ solution processes to produce p-type transition metal oxide layer, active layer, and n-type transition metal oxide layer of the optoelectronic devices. The p-type transition metal oxide layer comprises a copper oxide (CuO) layer or a nickel oxide (NiO) layer or a mixing layer, which comprises CuO or NiO mixed with an n-type transition metal oxide. | 2011-10-06 |
20110240997 | Epitaxial Structures, Methods of Forming the Same, and Devices Including the Same - Epitaxial structures, methods of making epitaxial structures, and devices incorporating such epitaxial structures are disclosed. The methods and the structures employ a liquid-phase Group IVA semiconductor element precursor ink (e.g., including a cyclo- and/or polysilane) and have a relatively good film quality (e.g., texture, density and/or purity). The Group IVA semiconductor element precursor ink forms an epitaxial film or feature when deposited on a (poly)crystalline substrate surface and heated sufficiently for the Group IVA semiconductor precursor film or feature to adopt the (poly)crystalline structure of the substrate surface. Devices incorporating a selective emitter that includes the present epitaxial structure may exhibit improved power conversion efficiency relative to a device having a selective emitter made without such a structure due to the improved film quality and/or the perfect interface formed in regions between the epitaxial film and contacts formed on the film. | 2011-10-06 |
20110240998 | THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY DEVICE - A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer including a source region, a drain region, and a channel region wherein a portion of the source and drain regions has an oxygen concentration less than the channel region. Further provided is a thin film transistor that includes an oxide semiconductor layer including a source region, a drain region, and a channel region, wherein a portion of the source and drain regions includes a dopant selected from the group consisting of aluminum, boron, gallium, indium, titanium, silicon, germanium, tin, lead, and combinations thereof. | 2011-10-06 |
20110240999 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device and a method of manufacturing the same. In one embodiment, a display device includes a substrate having a pixel region, a transistor region and a capacitor region, a transistor arranged within the transistor region of the substrate and a capacitor arranged within the capacitor region of the substrate, wherein the capacitor includes a lower electrode arranged on the substrate, a gate insulating layer arranged on the lower electrode and an upper electrode arranged on the gate insulating layer and overlapping the lower electrode, the upper electrode includes a first conductive layer and a second conductive layer arranged on the first conductive layer, wherein the first conductive layer is opaque. | 2011-10-06 |
20110241000 | Organic light-emitting display apparatus and method of manufacturing the same - An organic light-emitting display apparatus includes a planarization layer, a plurality of group electrode layers having different numbers of layers on the planarization layer and including a first group electrode layer having a metal layer, a reflective layer, a first transparent conductive layer, a second transparent conductive layer, and a third transparent conductive layer sequentially stacked, a second group electrode layer having the metal layer, the reflective layer, the first transparent conductive layer, and the third transparent conductive layer sequentially stacked, and a third group electrode layer having the metal layer, the reflective layer, and the first transparent conductive layer sequentially stacked, an intermediate layer on the first group electrode layer, the second group electrode layer, and the third group electrode layer, and including at least one organic light-emitting layer, and a second electrode layer on the intermediate layer. | 2011-10-06 |
20110241001 | DISPLAY APPARATUS, METHOD OF MANUFACTURING DISPLAY APPARATUS, AND ELECTRONIC APPARATUS - A display apparatus includes a plurality of pixels each including an electro-optic element, a writing transistor writing a video signal into the pixel, a holding capacitor holding the video signal written by the writing transistor, and a driving transistor driving the electro-optic element based on the video signal held in the holding capacitor. The driving transistor includes a channel region, a gate electrode disposed opposite to the channel region, a first source/drain region closer to a power source, a second source/drain region closer to the electro-optic element, and impurity regions disposed between the channel region and the first and second source/drain regions and having a lower concentration than that of the corresponding source/drain region. The impurity region disposed between the channel region and the first source/drain region is formed in a region other than a region facing the gate electrode. | 2011-10-06 |
20110241002 | SEMICONDUCTOR DEVICE, LIGHT EMITTING APPARATUS AND ELECTRONIC DEVICE - Disclosed in a semiconductor device including a substrate, a first transistor, a second transistor, and a first source electrode and a first drain electrode of the first transistor are arranged along a first direction and a second source electrode and a second drain electrode of the second transistor are arranged in a reverse order of the first source electrode and the first drain electrode along the first direction, the first source electrode and the second source electrode are connected by a source connecting wiring, the first drain electrode and the second drain electrode are connected by a drain connecting wiring, a first gate electrode and a second gate electrode are connected by a gate connecting wiring and the source connecting wiring and the drain connecting wiring are provided at positions except a region overlapped with the first gate electrode, the second gate electrode and the gate connecting wiring. | 2011-10-06 |
20110241003 | ELECTRO-OPTICAL DEVICE SUBSTRATE, ELECTRO-OPTICAL DEVICE, AND ELECTRONIC APPARATUS - In an electro-optical device substrate, first and second pixel switching elements each include a gate electrode formed of a first conductive film, a gate insulation film formed of a first insulation film, a semiconductor layer, a source electrode formed of a second conductive film, and a drain electrode formed of the second conductive film. A first storage capacitor includes a first storage capacitor electrode formed of the second conductive film, a protective film formed of a second insulation film so as to over at least the first storage capacitor electrode, and a pixel electrode formed so as to overlap with the first storage capacitor electrode at least partially with the protective film interposed therebetween. | 2011-10-06 |
20110241004 | ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS - A semiconductor layer of a TFT is continuously formed from an inside of an open hole portion overlapping with an intersection up to an outside of the open hole portion and includes a first source/drain area electrically connected to a surface portion of the data line exposed to a bottom surface of the open hole portion, a channel area disposed on a side wall of the open hole portion, and a second source/drain area formed outside the open hole portion and electrically connected to the pixel electrode. The gate electrode of the TFT is formed inside the open hole portion so as to overlap with at least the channel area and is electrically connected to a scanning line. | 2011-10-06 |
20110241005 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device capable of implementing the light shielding effect and process simplification, and a method of manufacturing the display device. The display device includes a transistor formed in a first region on a substrate, a pixel electrode formed in a second region on the substrate, a buffer layer formed beneath the transistor in the first region, and a light shielding layer formed between the buffer layer and the substrate in the first region. In the display device, the light shielding layer may include a semiconductor material. | 2011-10-06 |
20110241006 | SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAME - Provided is a liquid crystal display device ( | 2011-10-06 |
20110241007 | LIGHT-EMITTING ELEMENT, DISPLAY DEVICE, AND ELECTRONIC APPLIANCE - The present invention provides a light-emitting element having a structure in which the drive voltage is comparatively low and a light-emitting element in which the increase in the drive voltage over time is small. Further, the present invention provides a display device in which the drive voltage and the increase in the drive voltage over time are small and which can resist long-term use. A layer in contact with an electrode in a light-emitting element is a layer containing a P-type semiconductor or a hole-generating layer such as an organic compound layer containing a material having electron-accepting properties. The light-emitting layer is sandwiched between the hole-generating layers, and an electron-generating layer is sandwiched between the light-emitting layer and the hole-generating layer on a cathode side. | 2011-10-06 |
20110241008 | SEMICONDUCTOR DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is foamed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT. | 2011-10-06 |
20110241009 | PIXEL STRUCTURE - A pixel structure includes a scan line, a data line, an active element, a first passivation layer, a second passivation layer and a pixel electrode. The data line includes a first data metal segment and a second data metal layer. The active element includes a gate electrode, an insulating layer, a channel layer, a source and a drain. The channel layer is positioned on the insulating layer above the gate electrode. The source and the drain are positioned on the channel layer. The source is coupled to the data line. The first passivation layer and the second passivation layer cover the active element and form a first contact hole to expose a part of the drain. The second passivation layer covers a part edge of the drain. The pixel electrode is disposed across the second passivation layer and coupled to the drain via the first contact hole. | 2011-10-06 |
20110241010 | FLAT PANEL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a flat panel display device and a method of manufacturing the same. The flat panel display device includes a first thin-film transistor including a first active layer, a first insulation layer disposed on the first active layer, and a first gate electrode disposed on the first insulation layer; a second thin-film transistor including a second active layer, the first insulation layer disposed on the second active layer, a second insulation layer disposed on the first insulation layer, and a second gate electrode disposed on the second insulation layer, and electrically connected to the first thin-film transistor; and a capacitor electrically connected to the first thin-film transistor and the second thin-film transistor. In the structure as described above, since different numbers of insulation layers are interposed between active layers and gate electrode in each of the first thin-film transistor and the second thin-film transistor, threshold voltages of the first thin-film transistor and the second thin-film transistor are significantly different from each other, and thus it becomes easy to control the threshold voltages of the first thin-film transistor and the second thin-film transistor. | 2011-10-06 |
20110241011 | FIELD-SEQUENTIAL DISPLAY DEVICE - A first transistor in which an image signal is input to one of a first source and a first drain through an image signal line and a first scan signal is input to the first gate through a first scan signal line; a capacitor whose one of two electrodes is electrically connected to the other of the first source and the first drain of the first transistor; a second transistor in which one of a second source and a second drain is electrically connected to the other of the first source and the first drain of the first transistor and a second scan signal is input to a second gate through a second scan signal line; and a liquid crystal element whose first electrode is electrically connected to the other of the second source and the second drain of the second transistor. | 2011-10-06 |
20110241012 | Semiconductor Device and Method of Manufacturing the Same - The present invention relates to a semiconductor device including a circuit composed of thin film transistors having a novel GOLD (Gate-Overlapped LDD (Lightly Doped Drain)) structure. The thin film transistor comprises a first gate electrode and a second electrode being in contact with the first gate electrode and a gate insulating film. Further, the LDD is formed by using the first gate electrode as a mask, and source and drain regions are formed by using the second gate electrode as the mask. Then, the LDD overlapping with the second gate electrode is formed. This structure provides the thin film transistor with high reliability. | 2011-10-06 |
20110241013 | Thin film transistor, method of producing the same and flexible display device including the thin film transistor - A thin film transistor includes a polymer substrate having a weight loss of 0.95% or less at a temperature in the range of 400 to 600° C. A method of producing the thin film transistor includes forming a polymer substrate by forming a polymer layer and annealing the polymer layer at a temperature in the range of 150 to 550° C. A flexible display device includes the thin film transistor. | 2011-10-06 |
20110241014 | Organic light emitting display device - An organic light emitting display device includes a substrate having transmitting and pixel regions, the pixel regions being separated by the transmitting regions, at least one thin film transistor in each of the pixel regions, a plurality of transparent first conductive lines electrically connected to the thin film transistors and extending across the transmitting regions, a plurality of second conductive lines electrically connected to the thin film transistors and extending across the transmitting regions, a passivation layer, a plurality of pixel electrodes on the passivation layer, the pixel electrodes being separated and positioned to correspond to respective pixel regions, each of the pixel electrodes being electrically connected to and overlapping a corresponding thin film transistor, an opposite electrode overlapping the pixel electrodes in the transmitting and pixel regions, and an organic emission layer between the pixel electrodes and the opposite electrode. | 2011-10-06 |
20110241015 | PIXEL STRUCTURE - A pixel structure including a scan line, a data line intersecting the scan line, a first gate, a second gate, a third gate, a semiconductor layer, a source, a first drain, a second drain, a first pixel electrode, and a second pixel electrode is provided. The dataline and the scan line are interlaced disposed. The semiconductor layer is disposed on the scan line to define the first gate and the second gate. The source is directly connected to the data line and located between the first gate and the second gate. The first gate is located between the first drain and the source. The second gate is located between the second drain and the source. The third gate is electrically connected to the scan line. The first pixel electrode and the second pixel electrode are respectively electrically connected to the first drain and the second drain. | 2011-10-06 |
20110241016 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A nitride-based semiconductor light-emitting element LE | 2011-10-06 |
20110241017 | FIELD EFFECT TRANSISTOR - A field effect transistor includes: a buffer layer that is formed on a substrate; a high resistance layer or a foundation layer that is formed on the buffer layer; a carbon-containing carrier concentration controlling layer that is formed on the high resistance layer or the foundation layer; a carrier traveling layer that is formed on the carrier concentration controlling layer; a carrier supplying layer that is formed on the carrier traveling layer; a recess that is formed from the carrier supplying layer up to a predetermined depth; source/drain electrodes that are formed on the carrier supplying layer with the recess intervening therebetween; a gate insulating film that is formed on the carrier supplying layer so as to cover the recess; and a gate electrode that is formed on the gate insulating film in the recess | 2011-10-06 |
20110241018 | FABRICATING A GALLIUM NITRIDE DEVICE WITH A DIAMOND LAYER - In one aspect, a method includes fabricating a device. The device includes a gallium nitride (GaN) layer, a diamond layer disposed on the GaN layer and a gate structure disposed in contact with the GaN layer and the diamond layer. | 2011-10-06 |
20110241019 | III-Nitride Power Semiconductor Device - A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof. | 2011-10-06 |
20110241020 | HIGH ELECTRON MOBILITY TRANSISTOR WITH RECESSED BARRIER LAYER - Embodiments of a high electron mobility transistor with recessed barrier layer, and methods of forming the same, are disclosed. Other embodiments are also be described and claimed. | 2011-10-06 |
20110241021 | SILICON CARBIDE BARRIER DIODE - Improved semiconductor devices are fabricated utilizing nickel gallide and refractory borides deposited onto a silicon carbide semiconductor substrate. Varying the deposition and annealing parameters of fabrication can provide a more thermally stable device that has greater barrier height and a low ideality. This improvement in the electrical properties allows use of Schottky barrier diodes in high power and high temperature applications. In one embodiment, a refractory metal boride layer is joined to a surface of a silicon carbide semiconductor substrate. The refractory metal boride layer is deposited on the silicon carbon semiconductor substrate at a temperature greater than 200° C. In another embodiment, a Schottky barrier diode is fabricated via deposition of nickel gallide on a SiC substrate. | 2011-10-06 |
20110241022 | SUBSTRATE AND METHOD OF MANUFACTURING SUBSTRATE - A substrate, the presence of which can be detected with a method similar to a conventional method of detecting a Si substrate even if the substrate is transparent, and a method of manufacturing the substrate are provided. Light incident on an end portion of a transparent substrate is not transmitted through the substrate as with the light incident on a central portion of the substrate, but is totally reflected from a total reflection surface in a detection region present in at least a portion of the end portion of the substrate. A photoelectric sensor can recognize that a ratio of transmission of the light at the end portion of the substrate has become smaller, thereby detecting the presence of the substrate. | 2011-10-06 |
20110241023 | MULTICHIP LIGHT EMITTING DIODE (LED) AND METHOD OF MANUFACTURE - The present invention provides a multichip LED and method of manufacture in which white light is produced. Specifically, a plurality of electrically interconnected LED chips (e.g., interconnected via red metal wire) is selected for conversion of light to white light. In a typical embodiment, the LED chips comprise: a blue LED chip, a red LED chip, a green LED chip, and a target LED chip whose light output is converted to white light. A wavelength of a light output by one or more of the plurality of chips will be measured. Based on the wavelength measurement, a conformal coating is applied to the one or more of the LED chips. The conformal coating has a phosphor ratio that is based on the wavelength. Moreover, the phosphor ratio is comprised of at least one of the following colors: yellow, green, or red. Using the conformal coating the light output of the target LED is then converted to white light. In a typical embodiment, these steps are performed at the wafer level so that uniformity and consistency in results can be better obtained. Several different approaches can be implemented for isolating the coating area. Examples include the use of a paraffin wax, a silk screen, or a photo resist. Regardless, this approach allows multiple chips to be treated simultaneously. | 2011-10-06 |
20110241024 | LIGHT EMITTING DIODE HAVING A WAVELENGTH SHIFT LAYER AND METHOD OF MANUFACTURE - Embodiments of the present invention provide an LED having a Wavelength Shift Layer (WSL) and method of manufacture. Specifically, under embodiment of the present invention, a WSL layer is applied over an LED chip. The WSL itself typically comprises two layers: an adhesion layer applied over a set (at least one) of LED chips, and a conformal coating over the adhesion layer. The adhesion layer provides improved adhesive effect of the conformal coating to the LED chip(s). The conformal coating is comprised of a particular phosphor ratio that is determined based on a wavelength measurement of the underlying LED chip(s). Specifically, under the present invention, a wavelength of a light output by an LED chip(s) (e.g., blue or ultra-violet (UV)) is measured (e.g., at the wafer level). Typically, the phosphor ratio of is comprised of at least one of the following colors: yellow, green, or red. Regardless, this conformal coating is applied over a glue layer that itself is applied over the LED chip. | 2011-10-06 |
20110241025 | LIGHTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A lighting device including a metal substrate to prevent temperature rise of LED chip is offered. The lighting device includes the metal substrate, an anode or cathode electrode of the LED chip disposed on the metal substrate, brazing materials connecting the LED chip and the metal substrate, and a groove formed in the anode or cathode electrode. Forming the groove can prevent an occurrence of a crack in the brazing materials. | 2011-10-06 |
20110241026 | LIGHT-EMITTING DIODE CHIP AND PACKAGE STRUCTURE THEREOF - A light-emitting diode chip includes a first electrode and a metal composite layer. The metal composite layer is disposed on the first electrode and has a nickel layer. Since the metal composite layer is disposed on the first electrode, the yield of the wedge bonding can be increased, and the chip damage can be avoided. | 2011-10-06 |
20110241027 | Organic EL Element, Image Display Device and Method for Manufacturing the Same - One embodiment of the present invention is an organic EL element, including a substrate, a first electrode having a pixel region, the first electrode formed on the substrate, a multi-step partition wall, including a first partition wall formed on the substrate, the first partition wall sectioning the first substrate and having an inverse tapered shape, and a second partition wall formed on the first partition wall, the second partition wall having a bottom part which is narrower than a top part of the first partition wall, a light emitting medium layer, including a first light emitting medium layer formed on the pixel region, the first partition wall and the second partition wall, the first light emitting medium layer made of an inorganic material, and an organic light emitting layer on the first light emitting medium layer, and a second electrode formed on the light emitting medium layer, wherein the first light emitting medium layer is formed on the first electrode and the multi-layer partition wall. | 2011-10-06 |
20110241028 | LIGHT EMITTING DEVICE AND LIGHT UNIT HAVING THE SAME - Provided are a light emitting device and a light unit including the same. The light emitting device includes a body, a first cavity disposed at a center of the body, the first cavity having an opened upper side, a second cavity disposed around an upper portion of the body, the second cavity being spaced from the first cavity, first and second lead electrodes disposed within the first cavity, a light emitting chip disposed on at least one of the first and second lead electrodes, and a first molding member in the first cavity. The second cavity has an upper width grater than a lower width thereof and a side surface of the second cavity is formed of a vertical side surface with respect to a top surface of the body. | 2011-10-06 |
20110241029 | ORGANIC LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display device can prevent a voltage dropping in a cathode electrode. The organic light emitting display device includes a substrate, cathode wiring arranged on a surface of the substrate, an anode electrode arranged on the substrate and electrically insulated from the cathode wiring, an organic layer arrangement arranged on the anode electrode to form a plurality of unit pixels, a cathode electrode covering the organic layer arrangement and at least one electrical connection unit to electrically connect the cathode wiring to the cathode electrode. | 2011-10-06 |
20110241030 | LIGHT EMITTING DEVICE PACKAGE - A light emitting device package is provided which may prevent a Zener element mounted on an electrode from being positioned on an inclined plane of a cavity. The light emitting device package may include a light emitting device mounted on a first electrode, a Zener element mounted on a second electrode, and a body having cavity inclined planes that form a cavity on the first and second electrodes. The cavity inclined planes may include a first cavity inclined plane adjacent to the Zener element. The first cavity inclined plane may include an inclined plane forming a first inclination angle with respect to the second electrode and an interfacing plane forming a second inclination angle with respect to the second electrode, the second inclination angle being different from the first inclination angle. | 2011-10-06 |
20110241031 | OPTOELECTRONIC PROJECTION DEVICE - An optoelectronic projection device which generates a predefined image during operation, including a semiconductor body having an active layer that generates electromagnetic radiation and a radiation exit side and is an imaging element of the projection device, wherein, to electrically contact the semiconductor body, a first contact layer and a second contact layer are arranged at a rear side of the semiconductor body, the rear side lying opposite the radiation exit side, and are electrically insulated from one another by a separating layer. | 2011-10-06 |
20110241032 | LIGHT-EMITTING DEVICE - A light-emitting device is disclosed capable of reducing the variation of an emission spectrum depending on an angle of viewing a light extraction surface. More particularly, a light-emitting device is disclosed capable of preventing impurities from dispersing from a light-emitting element into a thin film transistor as well as reducing the variation of an emission spectrum depending on an angle of viewing a light extraction surface. The disclosed light-emitting device comprises a substrate; a first insulating layer provided over the substrate; a transistor provided over the first insulating layer; and a second insulating layer having a first opening portion so that the transistor is covered and the substrate is exposed; wherein a light-emitting element is provided inside the first opening portion. | 2011-10-06 |
20110241033 | LIGHT-EMITTING DEVICE - A light-emitting device includes a base and a light-emitting element that is disposed on the base. The light-emitting element is made up of a plurality of semiconductor layers including a light-emitting layer, and at the same time, is covered with a wavelength converting portion that includes a wavelength converting material. The light-emitting layer emits primary light, and the wavelength converting material absorbs part of the primary light and emits secondary light. The luminance of the primary light emitted from the edge portion of the light extraction surface of the light-emitting device is higher than the luminance of the primary light emitted from the inner region located inside the edge portion, and the ratio of the primary light and the secondary light that are emitted from a light extraction surface of the wavelength converting portion is substantially uniform across the light extraction surface of the wavelength converting portion. Thereby, a light color difference across the light extraction surface of the wavelength converting portion that covers the light-emitting element can be reduced further, and it is possible to irradiate an irradiation surface with light of uniform color. | 2011-10-06 |
20110241034 | SIGNAL LIGHT USING PHOSPHOR COATED LEDS - A method for creating an improved signal light is disclosed. For example, the improved signal light includes a housing, one or more first type of light emitting diodes (LEDs) emitting a light energy having a first dominant wavelength deployed in the housing, one or more second type of LEDs emitting a light energy having a second dominant wavelength deployed in the housing, a filter and a mixer. The filter may filter the light energy of the one or more second type of LEDs such that only a third dominant wavelength passes from the one or more second type of LEDs. The mixer may mix the light energy having the first dominant wavelength and the filtered light energy having the third dominant wavelength to form a light energy having a desired fourth dominant wavelength. | 2011-10-06 |
20110241035 | LED PACKAGE STRUCTURE FOR INCREASING LIGHT-EMITTING EFFICIENCY AND CONTROLLING LIGHT-PROJECTING ANGLE AND METHOD FOR MANUFACTURING THE SAME - An LED package structure for increasing light-emitting efficiency and controlling light-projecting angle includes a substrate unit, a light-emitting unit, a light-reflecting unit and a package unit. The substrate unit has a substrate body and a chip-placing area disposed on a top surface of the substrate body. The light-emitting unit has a plurality of LED chips electrically disposed on the chip-placing area. The light-reflecting unit has an annular reflecting resin body surroundingly formed on the top surface of the substrate body by coating. The annular reflecting resin body surrounds the LED chips that are disposed on the chip-placing area to form a resin position limiting space above the chip-placing area. The package unit has a translucent package resin body disposed on the top surface of the substrate body in order to cover the LED chips. The position of the translucent package resin body is limited in the resin position limiting space. | 2011-10-06 |
20110241036 | LIGHT-EMITTING APPARATUS - Provided is a light-emitting apparatus including a plurality of light-emitting devices arranged on a substrate, the plurality of light-emitting devices each including a pair of electrodes and an organic emission layer which is interposed between the pair of electrodes with one of the pair of electrodes serving as an anode and another one of the pair of electrodes serving as a cathode, wherein one of the pair of electrodes is an electrode common to the plurality of light-emitting devices, and wherein, of the plurality of light-emitting devices, ones that have the common electrode as their anodes and ones that have the common electrode as their cathodes are arranged alternately. | 2011-10-06 |
20110241037 | LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Provided are a light emitting device and a light emitting device package having the same. The light emitting device includes a first light emitting structure layer including a plurality of semiconductor layers, a first electrode on the first light emitting structure layer, a first insulation layer under the first light emitting structure layer, a second light emitting structure layer including a plurality of semiconductor layers under a first reflective layer, a second reflective layer under the second light emitting structure layer, a bonding layer between the second light emitting structure layer and the first reflective layer, and a plurality of connection members connecting the first light emitting structure layer to the second light emitting structure layer in parallel. | 2011-10-06 |
20110241038 | DISPLAY UNIT, METHOD OF MANUFACTURING SAME, ORGANIC LIGHT EMITTING UNIT, AND METHOD OF MANUFACTURING SAME - A display unit capable of being simply designed and manufactured by using more simplified light emitting device structure while capable of high definition display and display with superior color reproducibility and a manufacturing method thereof are provided. The display unit is a display unit ( | 2011-10-06 |
20110241039 | PRE-MOLDED SUPPORT MOUNT OF LEAD FRAME-TYPE FOR LED LIGHT MODULE - A pre-molded support mount of lead frame-type for an LED light module includes an insulative substrate and a lead frame embodied inside the insulative substrate and provided with a positive electrical contact and a negative electrical contact, which are exposed out of the insulative substrate. A plurality of LED chips can be mounted on the pre-molded support mount and electrically connected in series or in parallel through the lead frame. The pre-molded support mount has the advantage of being capable of simplifying manufacturing process and saving manufacturing costs in production of the LED light module. | 2011-10-06 |
20110241040 | NOVEL SEMICONDUCTOR PACKAGE WITH THROUGH SILICON VIAS - The substrate with through silicon plugs (or vias) described above removes the need for conductive bumps. The process flow is very simple and cost efficient. The structures described combines the separate TSV, redistribution layer, and conductive bump structures into a single structure. By combining the separate structures, a low resistance electrical connection with high heat dissipation capability is created. In addition, the substrate with through silicon plugs (or vias, or trenches) also allows multiple chips to be packaged together. A through silicon trench can surround the one or more chips to provide protection against copper diffusing to neighboring devices during manufacturing. In addition, multiple chips with similar or different functions can be integrated on the TSV substrate. Through silicon plugs with different patterns can be used under a semiconductor chip(s) to improve heat dissipation and to resolve manufacturing concerns. | 2011-10-06 |
20110241041 | LIGHT EMITTING DIODE THERMALLY ENHANCED CAVITY PACKAGE AND METHOD OF MANUFACTURE - Several embodiments of light emitting diode packaging configurations including a substrate with a cavity are disclosed herein. In one embodiment, a cavity is formed on a substrate to contain an LED and phosphor layer. The substrate has a channel separating the substrate into a first portion containing the cavity and a second portion. A filler of encapsulant material or other electrically insulating material is molded in the channel. The first portion can serve as a cathode for the LED and the second portion can serve as the anode. | 2011-10-06 |
20110241042 | NANOCRYSTAL-BASED OPTOELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME - The invention discloses a nanocrystal-based optoelectronic device and method of fabricating the same, such as light-emitting diode, photodetector, solar cell, etc. The optoelectronic device according to the invention includes a substrate of a first conductive type, N active layers formed on the substrate and a transparent conductive layer formed on the most-top active layer. Each active layer is constituted by a plurality of nanocrystals. Each nanocrystal is wrapped by a passivation layer. | 2011-10-06 |
20110241043 | SUBSTRATE FOR LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE EMPLOYING IT - Provided is a substrate for light-emitting element, which has a simple structure and nevertheless is capable of obtaining a high light extraction efficiency when a light-emitting element is mounted thereon. | 2011-10-06 |
20110241044 | LIQUID CRYSTAL DISPLAY DEVICE INCLUDING WHITE LIGHT EMITTING DIODE - A white light emitting diode and a liquid crystal display device that realizes images using the white light are provided. The white light emitting diode includes a blue light emitting diode (“LED”) light source, and a light conversion layer which converts incident light from the LED light source into white light. The light conversion layer includes green light emitting semiconductor nanocrystal and red light emitting semiconductor nanocrystal. A light emitting peak wavelength of the green light emitting semiconductor nanocrystal is about 520 nanometer (nm) or more, a light emitting peak wavelength of the red semiconductor nanocrystal is about 610 nanometer (nm) or more, and full width at half maximums (FWHMs) of light emitting peaks of the green and red light emitting semiconductor nanocrystals are about 45 nanometer (nm) or less. | 2011-10-06 |
20110241045 | HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME - A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer. | 2011-10-06 |