| 40th week of 2012 patent applcation highlights part 55 |
| Patent application number | Title | Published |
|---|
| 20120252188 | PLASMA PROCESSING METHOD AND DEVICE ISOLATION METHOD - A plasma processing method for use in device isolation by shallow trench isolation in which an insulating film is embedded in a trench formed in silicon and the insulating film is planarized to form a device isolation film, the method includes a plasma nitriding the silicon of an inner wall surface of the trench by using a plasma before embedding the insulating film in the trench. The plasma nitriding is performed by using a plasma of a processing gas containing a nitrogen-containing gas under conditions in which a processing pressure ranges from 1.3 Pa to 187 Pa and a ratio of a volumetric flow rate of the nitrogen-containing gas to a volumetric flow rate of the entire processing gas ranges from 1% to 80% such that a silicon nitride film is formed on the inner wall surface of the trench to have a thickness of 1 to 10 nm. | 2012-10-04 |
| 20120252189 | METHODS FOR BONDING SEMICONDUCTOR STRUCTURES INVOLVING ANNEALING PROCESSES, AND BONDED SEMICONDUCTOR STRUCTURES AND INTERMEDIATE STRUCTURES FORMED USING SUCH METHODS - Methods of bonding together semiconductor structures include annealing metal of a feature on a semiconductor structure prior to directly bonding the feature to a metal feature of another semiconductor structure to form a bonded metal structure, and annealing the bonded metal structure after the bonding process. The thermal budget of the first annealing process may be at least as high as a thermal budget of a later annealing process. Additional methods involve forming a void in a metal feature, and annealing the metal feature to expand the metal of the feature into the void. Bonded semiconductor structures and intermediate structures are formed using such methods. | 2012-10-04 |
| 20120252190 | Plasma Spraying with Mixed Feedstock - The instant invention discloses compositions for source material for a plasma spray gun comprising a Group IV based powder, optionally, a Group IV based liquid, optionally, a gas containing Group IV based gases, optionally a dopant, and a carrier gas, optionally, inert. | 2012-10-04 |
| 20120252191 | GALLIUM NITRIDE SEMICONDUCTOR DEVICE ON SOI AND PROCESS FOR MAKING SAME - Methods and apparatus for producing a gallium nitride semiconductor on insulator structure include: bonding a single crystal silicon layer to a transparent substrate; and growing a single crystal gallium nitride layer on the single crystal silicon layer. | 2012-10-04 |
| 20120252192 | METHOD OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS ON GLASS SUBSTRATES AND DEVICES THEREON - Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays | 2012-10-04 |
| 20120252193 | DOUBLE AND TRIPLE GATE MOSFET DEVICES AND METHODS FOR MAKING SAME - A double gate metal-oxide semiconductor field-effect transistor (MOSFET) includes a fin, a first gate and a second gate. The first gate is formed on top of the fin. The second gate surrounds the fin and the first gate. In another implementation, a triple gate MOSFET includes a fin, a first gate, a second gate, and a third gate. The first gate is formed on top of the fin. The second gate is formed adjacent the fin. The third gate is formed adjacent the fin and opposite the second gate. | 2012-10-04 |
| 20120252194 | ION IMPLANTATION METHOD AND ION IMPLANTATION APPARATUS - An ion implantation method includes reciprocally scanning an ion beam, mechanically scanning a wafer in a direction perpendicular to a beam scanning direction, and implanting ions into the wafer. The wafer is divided into a plurality of implantation regions, a beam scanning speed in the beam scanning direction is set to be varied for each of the implantation regions, an ion implantation amount distribution for each of the implantation regions is controlled by changing and controlling the beam scanning speed, and the ion implantation amount for each of the implantation regions is controlled and a beam scanning frequency and a beam scanning amplitude in the control of the beam scanning speed for each of the implantation regions is made to be constant by setting a wafer mechanical scanning speed and controlling the wafer mechanical scanning speed for each of the implantation regions. | 2012-10-04 |
| 20120252195 | ION IMPLANTATION SYSTEM AND METHOD - An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, eqillibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system. | 2012-10-04 |
| 20120252196 | METHOD FOR FORMING ULTRA-SHALLOW DOPING REGIONS BY SOLID PHASE DIFFUSION - A method for forming an ultra-shallow dopant region in a substrate is provided. In one embodiment, the method includes depositing a dopant layer in direct contact with the substrate, the dopant layer containing an oxide, a nitride, or an oxynitride, where the dopant layer contains a dopant selected from aluminum (Al), gallium (Ga), indium (In), thallium (Tl), nitrogen (N), phosphorous (P), arsenic (As), antimony (Sb), and bismuth (Bi). The method further includes patterning the dopant layer; and forming the ultra-shallow dopant region in the substrate by diffusing the dopant from the patterned dopant layer into the substrate by a thermal treatment. | 2012-10-04 |
| 20120252197 | METHOD FOR FORMING ULTRA-SHALLOW BORON DOPING REGIONS BY SOLID PHASE DIFFUSION - A method for forming an ultra-shallow boron dopant region in a substrate is provided. In one embodiment, the method includes depositing, by atomic layer deposition (ALD), a boron dopant layer in direct contact with the substrate, where the boron dopant layer contains an oxide, a nitride, or an oxynitride formed by alternating gaseous exposures of boron amide precursor or an organoboron precursor and a reactant gas. The method further includes patterning the dopant layer and forming an ultra-shallow dopant region in the substrate by diffusing boron from the boron dopant layer into the substrate by a thermal treatment. | 2012-10-04 |
| 20120252198 | METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE - The present application discloses a method for manufacturing a semiconductor structure, comprising the steps of: a) providing an n-type field effect transistor comprising a source region, a drain region, and a first gate; b) forming a tensile stress layer on the n-type field effect transistor; c) removing the first gate so as to form a gate opening; d) performing an anneal so that the source region and the drain region memorize a stress induced by the tensile stress layer; e) forming a second gate; f) removing the tensile stress layer; and b) forming an interlayer dielectric layer on the n-type field effect transistor. The present method incorporates a replacement process and a stress memorization technique, which enhances the stress memorization effect and thus mobility of electrons, which in turn improves overall properties of the semiconductor structure. | 2012-10-04 |
| 20120252199 | METHODS FOR FABRICATING A PHOTOLITHOGRAPHIC MASK AND FOR FABRICATING A SEMICONDUCTOR INTEGRATED CIRCUIT USING SUCH A MASK - Methods are provided for designing a photolithographic mask and for fabricating a semiconductor IC using such a mask. In accordance with one embodiment a method for fabricating a semiconductor IC includes determining a design target for a region within the IC. An initial mask geometry is determined for the region having a mask opening and a mask bias relative to the design target. A sub-resolution edge ring having a predetermined, fixed spacing to an edge of the mask opening is inserted into the mask geometry and a lithographic mask is generated. A material layer is applied overlying a semiconductor substrate upon which the IC is to be fabricated and a layer of photoresist is applied overlying the material layer. The layer of photoresist is exposed through the lithographic mask and is developed. A process step is then performed on the material layer using the layer of photoresist as a mask. | 2012-10-04 |
| 20120252200 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a processing chamber arranged in a vacuum vessel. A wafer placed on a sample stage in the processing chamber is processed using a plasma formed in the processing chamber. Before etching the film layers provided on the wafer composed of a metal substance and an underlying oxide film or a material having a high dielectric constant, another wafer, provided on surface thereof a film composed of a metal of the same kind as the metal substance, processed and particles of the metal are deposited on an inner wall of said processing chamber. | 2012-10-04 |
| 20120252201 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - According to one embodiment, a method for fabricating a semiconductor device including a memory cell portion and a select gate portion, the method includes etching a charge accumulation layer, a tunnel insulating film, and a semiconductor substrate to make a trench, burying a first insulating film in the trench to contact with a side surface of the charge accumulation layer, performing heat processing to compress the first insulating film, forming a second insulating film on the charge accumulation layer and the first insulating film, etching the second insulating film in the select gate portion to expose a surface of the charge accumulation layer, forming a silicon layer to contact with the exposed surface of the charge accumulation layer, forming a metal layer on the silicon layer, and performing heat processing to silicide an entire boundary region between the charge accumulation layer and the tunnel insulating film. | 2012-10-04 |
| 20120252202 | SEMICONDUCTOR MEMORY DEVICES AND METHOD OF MANUFACTURING THE SAME - The semiconductor memory devices include an interfacial improvement resistance layer is formed between a polysilicon layer and a conductive layer in order to improve interfacial resistance between the polysilicon layer and the conductive layer. The method of manufacturing semiconductor memory devices includes forming a polysilicon layer over a semiconductor substrate, amorphizing the polysilicon layer, and stacking an interfacial improvement resistance layer and conductive layers over the amorphized polysilicon layer. | 2012-10-04 |
| 20120252203 | CONTROLLED ELECTROPLATED SOLDER BUMPS - The uniformity of the composition of plated solder bumps from one batch of wafers to another is improved by controlling the rotational speed of the wafers based on the particular solder bump pattern. Embodiments include sequentially horizontal fountain electroplating a pattern of solder bumps, e.g., SnAg solder bumps, on a plurality batches of wafers and controlling the rotational speed of each batch of wafers during electroplating based on a calibration plot of the concentration of a solder bump component, e.g., Ag, as a function of rotational speed for each solder bump pattern, such that the uniformity of the Ag concentration in the patterns of solder bumps is greater than 95%, e.g., greater than 98%. Embodiments further include electroplating in the same plater sequential batches of wafers having both different patterns and different solder bump compositions at the same high throughput. | 2012-10-04 |
| 20120252204 | PATTERNABLE LOW-K DIELECTRIC INTERCONNECT STRUCTURE WITH A GRADED CAP LAYER AND METHOD OF FABRICATION - An interconnect structure is provided that includes at least one patterned and cured low-k material located on a surface of a patterned graded cap layer. The at least one cured and patterned low-k material and the patterned graded cap layer each have conductively filled regions embedded therein. The patterned and cured low-k material is a cured product of a functionalized polymer, copolymer, or a blend including at least two of any combination of polymers and/or copolymers having one or more acid-sensitive imageable groups, and the graded cap layer includes a lower region that functions as a barrier region and an upper region that has antireflective properties of a permanent antireflective coating. | 2012-10-04 |
| 20120252205 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed. | 2012-10-04 |
| 20120252206 | PROCESS FOR DAMASCENE STRUCTURE WITH REDUCED LOW-K DAMAGE - Embodiments described herein generally provide methods for reducing undesired low-k damages during a damascene process using a sacrificial dielectric material and optionally a barrier/capping layer. In one embodiment, a damascene structure is formed through a sacrificial dielectric material deposited over a dielectric base layer. The damascene structure is filled with a suitable metal such as copper. The sacrificial dielectric material filled in trench areas between the copper damascene is then removed, followed by a barrier/cap layer which conformally or selectively covers exposed surfaces of the copper damascene structure. Ultra low-k dielectric materials may then fill the trench areas that were previously filled with sacrificial dielectric material. The invention prevents the ultra low-k material between the metal lines from exposing to various damaging processes during a damascene process such as etching, stripping, wet cleaning, pre-metal cleaning or CMP process. | 2012-10-04 |
| 20120252207 | POST DEPOSITION TREATMENTS FOR CVD COBALT FILMS - Embodiments of the invention provide methods for forming materials on a substrate used for metal gate and other applications. In one embodiment, a method includes forming a cobalt stack over a barrier layer disposed on a substrate by depositing a cobalt layer during a deposition process, exposing the cobalt layer to a plasma to form a plasma-treated cobalt layer during a plasma process, and repeating the cobalt deposition process and the plasma process to form the cobalt stack containing a plurality of plasma-treated cobalt layers. The method further includes exposing the cobalt stack to an oxygen source gas to form a cobalt oxide layer from an upper portion of the cobalt stack during a surface oxidation process and heating the remaining portion of the cobalt stack to a temperature within a range from about 300° C. to about 500° C. to form a crystalline cobalt film during a thermal annealing crystallization process. | 2012-10-04 |
| 20120252208 | METHOD OF FORMING METAL INTERCONNECTIONS OF SEMICONDUCTOR DEVICE - A method of forming a metal interconnection of semiconductor device is provided. The method includes forming a low-k dielectric layer including an opening; forming a barrier metal pattern conformally covering a bottom surface and an inner sidewall of the opening; forming a metal pattern exposing a part of the inner sidewall of the barrier metal pattern in the opening; forming a metal capping layer on the top surfaces of the metal pattern and the low-k dielectric layer using a selective chemical vapor deposition process, wherein the thickness of the metal capping layer on the metal pattern is greater than the thickness of the metal capping layer on the low-k dielectric layer; and forming a metal capping pattern covering the top surface of the metal pattern by planarizing the metal capping layer down to the top surface of the low-k dielectric layer. | 2012-10-04 |
| 20120252209 | PLASMA NITRIDING METHOD, PLASMA NITRIDING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A plasma nitriding method includes placing, in a processing chamber, a target object having a structure including a first portion containing a metal and a second portion containing silicon to expose surfaces of the first and the second portion; and performing a plasma process on the target object to selectively nitride the surface of the first portion such that a metal nitride film is selectively formed on the surface of the first portion. Further, the first portion contains tungsten, and a nitrogen-containing plasma is generated by supplying a nitrogen-containing gas into the processing chamber and setting an internal pressure of the processing chamber in a range from 133 Pa to 1333 Pa. The surface of the first portion is selectively nitrided without nitriding the surface of the second portion by the nitrogen-containing plasma such that a tungsten nitride film is formed on the surface of the first portion. | 2012-10-04 |
| 20120252210 | METHOD FOR MODIFYING METAL CAP LAYERS IN SEMICONDUCTOR DEVICES - A method for forming a semiconductor device with improved electromigration (EM) and stress migration (SM) properties. The method includes providing a planarized patterned substrate containing a copper (Cu) metal surface and a low-k dielectric layer surface, selectively depositing a metal cap layer on the Cu metal surface, and modifying the metal cap layer by exposing the metal cap layer to a process gas containing ammonia (NH | 2012-10-04 |
| 20120252211 | METHOD FOR PATTERNING A LACQUER LAYER TO HOLD ELECTRICAL GRIDLINES - A method is provided for simultaneously forming functional light structures and grooves configured to hold electrical circuitry on a lacquer layer deposited on a base substrate, which is for use in an optoelectronic device. The method includes applying the lacquer layer on the base substrate and heating it beyond its glass transition temperature to soften it. Thereafter, a stamper is used to simultaneously replicate the grooves and the functional light structures onto the lacquer layer. The stamper has a mating surface, which has negative impressions of the grooves on its first portion and the functional light structures on its second portion. Thereafter, the lacquer layer is cooled and the electrical circuitry is formed in the grooves on the lacquer layer. | 2012-10-04 |
| 20120252212 | PROCESSING METHOD FOR WAFER HAVING EMBEDDED ELECTRODES - A wafer processing method which includes a protective member attaching step of attaching a protective member to the front side of the wafer, a back grinding step of grinding the back side of the silicon (Si) substrate of the wafer so as not to expose electrodes to the back side of the silicon (Si) substrate, and an etching step of etching the back side of the silicon (Si) substrate by using an etching liquid to thereby expose the electrodes to the back side of the silicon (Si) substrate. The etching liquid includes a first etching liquid having a high etching rate to silicon (Si) and a second etching liquid capable of etching silicon (Si) and having a low etching rate to silicon dioxide (SiO | 2012-10-04 |
| 20120252213 | CHEMICAL MECHANICAL POLISHING OF GROUP III-NITRIDE SURFACES - A method of chemically-mechanically polishing a substrate having a Group III-nitride surface includes providing a chemical-mechanical polishing slurry composition. The slurry composition includes a slurry solution including a liquid carrier and an oxidizer including a transition metal or a per-based compound. The slurry solution includes at least one component that reacts with the Group III-nitride surface to form a softened Group III-nitride surface. The Group III-nitride comprising surface is contacted with the slurry composition by a pad to form the softened Group III-nitride surface. The pad is moved relative to the softened Group III-nitride surface, wherein at least a portion of the softened Group III-nitride surface is removed. | 2012-10-04 |
| 20120252214 | POLISHING LIQUID AND POLISHING METHOD - A polishing liquid is provided with which a polishing rate relative to a conductive metal wiring typically represented by a copper wiring on a substrate having a barrier layer containing manganese and/or a manganese alloy and an insulating layer on the surface (particularly, copper oxide formed at the boundary) is decreased and with which less step height between the conductive metal wiring and the insulating layer is formed, and a polishing method using the polishing liquid is also provided. The polishing liquid includes: colloidal silica particles exhibiting a positive ζ potential at the surface thereof; a corrosion inhibiting agent; and an oxidizing agent, in which the polishing liquid is used in a chemical mechanical polishing process for a semiconductor device having, on a surface thereof, a barrier layer containing manganese and/or a manganese alloy, a conductive metal wiring, and an insulating layer. | 2012-10-04 |
| 20120252215 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE, PATTERN WRITING APPARATUS, RECORDING MEDIUM RECORDING PROGRAM, AND PATTERN TRANSFER APPARATUS - A method for fabricating a semiconductor device, includes dividing a pattern region of a desired pattern that is to be formed on a semiconductor substrate into a plurality of sub-regions; calculating combination condition including a shape of illumination light for transferring and a mask pattern obtained by correcting a partial pattern in the sub-region of the desired pattern formed on a mask used during transferring for each of the plurality of sub-regions, to make a dimension error of the partial pattern of each of the plurality of sub-regions smaller when transferred to the semiconductor substrate; and forming the desired pattern by making multiple exposures on the semiconductor substrate in such a way that the partial patterns of the sub-regions divided are sequentially transferred by transferring a pattern to the semiconductor substrate using the combination conditions calculated for each of the sub-regions. | 2012-10-04 |
| 20120252216 | Low-Temperature in-situ Removal of Oxide from a Silicon Surface During CMOS Epitaxial Processing - Low-temperature in-situ techniques are provided for the removal of oxide from a silicon surface during CMOS epitaxial processing. Oxide is removed from a semiconductor wafer having a silicon surface, by depositing a SiGe layer on the silicon surface; etching the SiGe layer from the silicon surface at a temperature below 700 C (and above, for example, approximately 450 C); and repeating the depositing and etching steps a number of times until a contaminant is substantially removed from the silicon surface. In one variation, the deposited layer comprises a group IV semiconductor material and/or an alloy thereof. | 2012-10-04 |
| 20120252217 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND METHOD FOR FORMING PATTERN - A resist underlayer film-forming composition includes (A) a polymer that includes a repeating unit shown by a formula (1), and has a polystyrene-reduced weight average molecular weight of 3000 to 10,000, and (B) a solvent, | 2012-10-04 |
| 20120252218 | BIPHENYL DERIVATIVE, RESIST BOTTOM LAYER MATERIAL, BOTTOM LAYER FORMING METHOD, AND PATTERNING PROCESS - A biphenyl derivative having formula (1) is provided wherein Ar1 and Ar2 denote a benzene or naphthalene ring, and x and z each are 0 or 1. A material comprising the biphenyl derivative or a polymer comprising recurring units of the biphenyl derivative is spin coated and heat treated to form a resist bottom layer having improved properties, optimum values of n and k, step coverage, etch resistance, heat resistance, solvent resistance, and minimized outgassing. | 2012-10-04 |
| 20120252219 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - Provided are a plasma processing apparatus with a radio-frequency power supply supplying temporally modulated intermittent radio-frequency power which can be controlled with high precision in a wide repetition frequency band, and a plasma processing method using the plasma processing apparatus. | 2012-10-04 |
| 20120252220 | SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, METHOD FOR PROCESSING SUBSTRATES - A substrate supporting member provided in a processing chamber for processing the substrate and configured to support the substrate, has on its upper surface, a protruding area that supports an edge side of the substrate from below; a recessed area provided inside of the protruding area so as not to be brought into contact with the substrate supported by the protruding area; and an auxiliary protruding area formed lower than the protruding area and provided in the recessed area, and has a flow passage that is communicated with inside of the recessed area, for escaping gas between the substrate and the substrate supporting member from the recessed area side. | 2012-10-04 |
| 20120252221 | FORMING CURVED FEATURES USING A SHADOW MASK - Processes for making a profile-transferring substrate surface and membranes having curved features are disclosed. A profile-transferring substrate surface having a curved feature is created by isotropic plasma etching through a shadow mask. The shadow mask has a through hole which has a lower portion adjacent to the bottom surface of the shadow mask and an upper portion that is above and narrower than the lower portion. The isotropic plasma etching through the shadow mask can create a curved dent in a planar substrate in a central portion of an area enclosed by the bottom opening. After the shadow mask is removed. A uniform layer of material deposited over the exposed surface of the substrate will include a curved feature at the location of the curved dent in the substrate surface. | 2012-10-04 |
| 20120252222 | GCIB PROCESS FOR REDUCING INTERFACIAL ROUGHNESS FOLLOWING PRE-AMORPHIZATION - A method for amorphizing a layer on a substrate is described. In one embodiment, the method includes treating the substrate with a first gas cluster ion beam (GCIB) using a first beam energy selected to yield an amorphous sub-layer within the substrate of a desired thickness, which produces a first interfacial roughness of an amorphous-crystal interface between the amorphous sub-layer and a crystalline sub-layer of the substrate. The method further includes treating the substrate with a second GCIB using a second beam energy, less than the first beam energy, to reduce the first interfacial roughness of the amorphous-crystal interface to a second interfacial roughness. | 2012-10-04 |
| 20120252223 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device according to the present invention includes the steps of: (a) introducing hydrogen and oxygen on a SiC substrate; and (b) subjecting the hydrogen and the oxygen to a combustion reaction on the SiC substrate to form a gate oxide film being a silicon oxide film on a surface of the SiC substrate by the combustion reaction. | 2012-10-04 |
| 20120252224 | METHOD OF DEPOSITING SILICON OXIDE FILM AND SILICON NITRIDE FILM, FILM FORMING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of depositing a silicon oxide film and a silicon nitride film includes depositing the silicon oxide film and the silicon nitride film on a substrate, and a gas for forming the silicon nitride film further includes boron. | 2012-10-04 |
| 20120252225 | SEMICONDUCTOR FABRICATION METHOD - A semiconductor fabrication method is provided, in which a protective layer is deposited on the dummy wafer such that the protective layer fully encases the dummy wafer. Therefore, the dummy wafer will not be oxidized during thermal oxidation, thereby reducing dummy wafer consumption, decreasing production cost, avoiding particulate matter produced due to oxidation of the dummy wafer, and preventing the wafer to be oxidized from contamination. | 2012-10-04 |
| 20120252226 | PLASMA PROCESSING METHOD - A plasma processing method performs a plasma oxidation on a substrate, on which a trench is formed after an oxide film is formed, by using a plasma processing apparatus for plasma-processing an object by using microwave plasma. In the plasma processing method, the substrate is mounted on a mounting table to which an ion attraction high frequency voltage is applied, and the plasma oxidation is performed while applying the ion attraction high frequency voltage to the substrate. Further, a process gas used in the plasma oxidation is a mixture of a rare gas having smaller atomic weight than that of argon gas, and oxygen gas, and the plasma processing is performed at a pressure of 6.7 to 133 Pa in a depressurized chamber. | 2012-10-04 |
| 20120252227 | SILICON OXYCARBIDE, GROWTH METHOD OF SILICON OXYCARBIDE LAYER, SEMICONDUCTOR DEVICE AND MANUFACTURE METHOD FOR SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O | 2012-10-04 |
| 20120252228 | METHOD OF CONTROLLING SILICON OXIDE FILM THICKNESS - A deposition process for coating a substrate with films of a different thickness on front and rear surface of a substrate can be achieve in one growth. The thickness of the film deposition can be controlled by the separation between the substrates. Different separation distances between the substrates in the same chemical bath will result in different film thicknesses on the substrate. Substrates may be arranged to have different separation distances between front and back surfaces, a V-shaped arrangement, or placed next to a curtain with varying separation distances between a substrate and the curtain. | 2012-10-04 |
| 20120252229 | System and Process For Heating Semiconductor Wafers by Optimizing Absorption of Electromagnetic Energy - An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers. | 2012-10-04 |
| 20120252230 | METHOD AND APPARATUS FOR COUPLING PORTABLE COMMUNICATION DEVICES - A method and apparatus couple portable communication devices. The apparatus ( | 2012-10-04 |
| 20120252231 | MAGNETIC CONNECTOR SYSTEM - A magnetic connector system comprising a first connector part having at least one contact and at least one magnetic element and a second connector part having at least one contact and at least one magnetic element, wherein the magnetic elements of the connector parts are arranged to create an attractive force to keep the contacts of the connector parts engaged when the connector parts are proximally located, wherein there is a pivot point at an edge area of the first connector part and the second connector part, the pivot point being located between the first connector part and the second connector part when the connector parts are engaged, and wherein the first connector part and/or the second connector part are arranged to turn around the pivot point when the first connector part and the second connector part are disconnected from each other by a non-axial force. | 2012-10-04 |
| 20120252232 | ELECTRICAL CONNECTOR - Electrical connectors that are mating compatible with the MicroTCA® standard and configured to be mounted to an underlying substrate are provided. Certain of the electrical connectors can be configured to be mounted to a substrate configured in accordance with the MicroTCA® press fit footprint. Additionally, electrical connectors that are mating compatible with the MicroTCA® standard and configured to be mounted to respective alternative footprints, and substrates configured in accordance with the respective alternative footprints are provided. The disclosed electrical connectors and corresponding substrate footprints can operate to transmit data at speed up to and in excess of 25 Gigabits per second. | 2012-10-04 |
| 20120252233 | SOCKET - This invention provides a socket for a circuit board that adds function of electrical resistive element to a contact. A socket includes a socket body extending at a longitudinal direction; and a plurality of contacts disposed in two lines along the longitudinal direction of the socket body. When a memory module is connected to the socket body, terminals formed on opposite surfaces of the memory module are electrically and elastically connected by the contacts. The contact includes a contact portion which contacts the terminal, a bent portion for generating an elastic force, and a base portion. The contact is made of a conductive metal having elastic properties, and the contact used for carrying signal is provided with a resistor of an electrical resistive material that is different from the conductive metal. The resistor is connected in a current path between the base portion and the terminal of the memory module. | 2012-10-04 |
| 20120252234 | CIRCUIT STRUCTURE AND ELECTRIC JUNCTION BOX - A circuit structure includes a circuit board having a conduction path and a through-hole continuing to the conduction path, a wire routing member that has a wire holding convex portion holding a wire configured to form a pre-determined conduction path and that is disposed to face the circuit board, a relaying wire whose one end is inserted into the through-hole in the circuit board to thereby connect the conductor path on the wire routing plate to that on the circuit board, and a positioning portion that is provided on the wire routing plate to thereby position a tip of the relaying wire. | 2012-10-04 |
| 20120252235 | SOCKET FOR SURFACE MOUNT MODULE - In an example, an apparatus, such as a header pin, includes an insulator and a first pin disposed at least partially within the insulator. The first pin includes a first portion configured to electrically couple to a circuit board. A second portion is configured to releasably engage a pin of a surface mount module. The second portion includes a retention feature configured to selectively retain the second portion in engagement with the pin of the surface mount module. The second portion is movable between a first position and a second position, wherein the second portion is biased toward the first position. The second portion is movable to the second position to allow the pin of the surface mount module to pass by the retention feature. The second portion is configured to move back toward the first position to engage the pin of the surface mount module. | 2012-10-04 |
| 20120252236 | CONNECTOR TERMINAL STRUCTURE - A connector terminal structure is disclosed. The connector has a circuit board on which a first terminal set and a second terminal set are soldered. Each of the first and second terminal sets includes multiple terminals. Each terminal has a contact section and a soldered section. The contact sections of the first and second terminal sets together define a signal contact area. The connection terminal structure is characterized in that the soldered sections of the terminals of the first terminal set and the soldered points of the circuit board on which the soldered sections are soldered are positioned on a first side of the signal contact area, while the soldered sections of the terminals of the second terminal set and the soldered points of the circuit board on which the soldered sections are soldered are positioned on a second side of the signal contact area opposite to the first side. | 2012-10-04 |
| 20120252237 | COMPRESSION STYLE MID-SPAN GROUND CLAMP - A grounding clamp positioned on a coaxial cable at a location other than an end of the coaxial cable, wherein the grounding clamp includes an outer shell having a radial relationship with an elastomeric sleeve, the elastomeric sleeve being radially disposed over a conductive bonding contact, the conductive bonding contact being radially disposed over an outer conductive portion of the coaxial cable, wherein axial compression of the grounding clamp facilitates electrical contact between the outer shell and the conductive bonding contact and between the conductive bonding contact and the outer conductive portion of the coaxial cable. Furthermore, an associated method for maintaining ground continuity is also provided. | 2012-10-04 |
| 20120252238 | ELECTRONIC DEVICE AND RELEASING APPARATUS THEREOF - An electronic device includes a housing, an electronic module received in the housing, a locking member fixed to the electronic module and locked to the housing, and a releasing apparatus fixed to the housing. The releasing apparatus includes a mounting member fixed to the bracket, an operation member slidably mounted to the mounting member, a first connecting member hinged to the mounting member, and a second connecting member hinged to the first connecting member and the operation member. The operation member is pushed to drive the first connecting member and the second connecting member to rotate to raise a junction of the first and second connecting members, to resist against the locking member to be deformed and released from the housing. | 2012-10-04 |
| 20120252239 | ELECTRICAL CONNECTOR - An electrical connector includes a body having a plurality of receiving slots, a plurality of terminals respectively accommodated in the receiving slots, each terminal having a stopping portion, and a cover, slideably covered on the body, and having a plurality of pressed surfaces respectively corresponding to the stopping portions. When the cover slides along a first direction relative to the body, the stopping portion limits upward displacement of the pressed surface, so as to limit upward warping of the cover, thereby ensuring good contact between the terminal and a mating element. | 2012-10-04 |
| 20120252240 | SOCKET FOR MICRO SUBSCRIBER IDENTIFICATION MODULE CARD - A micro SIM card socket is equipped with an insulator housing, wherein the SIM card is installed; a metal shell, connected to the housing at a constant distance from the housing, that guides the insertion of the SIM card; multiple contact terminals, supported by the housing, one end of which is connected to the contact terminal of the SIM card and the other end of which is fixed to the printed circuit board; a locking unit installed on the side of the housing in order to selectively fix the insertion point of the SIM card, having a curve-shaped pressure pin, at the end of the unit, putting pressure to the edge of the SIM card; a detect terminal installed in the housing in order to detect the insertion of the SIM card and that is pressured by the pressure pin, located in proximity of the pressure pin, when the SIM card is inserted; and a switch terminal that elastically contacts the detect terminal. | 2012-10-04 |
| 20120252241 | Shock-proof electric outlet - The inventive concept is directed to a shock-proof electrical outlet. The front of the electrical outlet has two openings to receive the prongs of a male plug. One side of the opening is the hot side while the other side is the neutral side. Below each of the openings are located two opposed switches oriented such that when the prongs of the male plug are passing through the openings they will activate the switches. The switches in turn will turn on an energize an ignition coil. As soon as the ignition coil is energized it will activate other switches which in turn will turn on the power to the two prongs of the male plug by way of interposed copper contacts. Any foreign objects inserted into any of the openings cannot energize both switches simultaneously and therefore cannot produce an electric shock to the person. | 2012-10-04 |
| 20120252242 | System and Method for Releasably Coupling a Fluid Dispenser to a Dispensing System - A system and method for releasably coupling a fluid dispenser to a structure. There is a push to connect-pull to disconnect connector system that has first and second mating connectors. A first connector is mounted to the dispenser and a second connector is mounted to the structure. The connector system accomplishes both mechanical and electrical interconnection between the dispenser and the structure. | 2012-10-04 |
| 20120252243 | Pneumatically actuated IC socket with integrated heat sink - An IC socket is pneumatically actuated and has an integrated heat sink. Thermally conductive elements of the heat sink extend through an opening of a pneumatically actuated element shaped as a closed curve of finite width so that heat radiating from the thermally conductive elements may dissipate through a top opening of the IC socket. Downward force exerted by the pneumatically actuated element is transferred through a gimbaled multi-plate and spring arrangement to provide even pressure on the die and substrate of an IC device being held in place by the IC socket. A spring-loaded ground tab on the bottom of the IC socket simplifies grounding of the IC socket to avoid damaging the held IC device by static discharge. | 2012-10-04 |
| 20120252244 | ADAPTER PLATE FOR SECURING AN ADAPTER TO A SURFACE - An adapter plate assembly includes an adapter for mating two connectors and an adapter plate. The adapter includes a first end and a second end and a passage therethrough. The adapter further includes an adapter footprint and an adapter flange. The first end has an external threaded portion and the second end has an external threaded portion. The adapter is adapted to receive a ruggedized connector in the first and a multi-fiber connector in the second end. The adapter plate includes an aperture for receiving at least a portion of the adapter, a footprint receiving portion for receiving at least a portion of the adapter footprint, a flange receiving portion for receiving the adapter flange, and an attachment feature. A method of assembling the adapter plate and mounting the adapter plate to a non-standard wall is described. | 2012-10-04 |
| 20120252245 | INTEGRATED CONNECTOR - The integrated connector includes an insulative body, a circuit board, eSATA interface bonding fingers, USB interface bonding fingers and USB pins. The insulative body has a trough towards a front side thereof and a plate under the trough. The plate is towards the front side of the insulative body and is formed with first openings and second openings behind the first openings. The circuit board is disposed in the trough and has a first conductive side and a second conductive side. The eSATA interface bonding fingers are disposed on the first conductive side. The USB interface bonding fingers are disposed on the second conductive side and exposed by the first openings. The USB pins are disposed in the trough and under the circuit. Each of the USB pins has a contact portion and a solder portion. The contact portions protrude from the insulative body through the second openings. | 2012-10-04 |
| 20120252246 | APPLIANCE HAVING A CONTROL HOUSING WITH A CONNECTOR BRACE - An appliance having a control housing assembly for operably storing a printed circuit board to which corresponding wiring connectors may be connected to couple electrical components to the printed circuit board. | 2012-10-04 |
| 20120252247 | Submersible Electrical Connector - A connector for use underwater or in a wet or severe environment comprises first and second connector parts adapted to be interengaged to establish an electrical connection. The first connector part has at least one pin, and the second connector part has at least one electrical contact for engagement by the pin when the connector parts are interengaged. The pin comprises an axially extending electrically conductive portion and an axially extending electrically insulating sleeve around said conductive portion, and the pin is supported by and projects axially forwardly from a support whereby its insulating sleeve is exposed along a longitudinally extending portion thereof to ambient conditions when the connector parts are disengaged. The connector part has a protective rigid metal sleeve member arranged to extend at least partly along the first portion of the insulating sleeve and at least partly along the second portion thereof. | 2012-10-04 |
| 20120252248 | TRANSFORMABLE ELECTRICAL PLUG DEVICES - A device is provided for establishing an electrical connection between an electrical plug and an electrical socket. The device includes a first body and a second body coupled together to move between a stowed configuration in which the first body and second body are substantially aligned in a common plane and a deployed configuration in which one end of the first body and one end of the second body cooperate to form a device socket for the electrical plug and in which the other end of the first body and the other end of the second body cooperate to form a device plug for the electrical socket. Methods of making a device for establishing an electrical connection between an electrical plug and an electrical socket are also provided. | 2012-10-04 |
| 20120252249 | AUXILIARY FITTING AND ASSEMBLY - An auxiliary fitting ( | 2012-10-04 |
| 20120252250 | POWER PLUG LOCKING DEVICE - When a power plug locking device moves a plate to a lock position or unlock position, the plate is rotated toward an operational end position with a power plug lock motor while the current of the motor is detected. When the plate comes into contact with a switching piece of a switching mechanism, the switching piece applies a load to the plate. When the current flowing through the motor becomes greater than or equal to a threshold, the supply of power to the power plug lock motor is stopped. Then, switching load of the switching mechanism | 2012-10-04 |
| 20120252251 | POWER PLUG LOCKING DEVICE - A power plug locking device prevents unauthorized removal of a power plug from an inlet. An operation button is arranged on a case of the power plug locking device to switch the power plug locking device to a lock state. The operation button is coupled by a link to a lock bar of a lock mechanism. When the operation button is pushed, the pushing force is transmitted by the link to the lock bar. This pivots the lock bar in a lock direction. When the lock bar is located at a lock position, a pin of a plug lock is hooked to the lock bar to maintain the lock bar in a lock state. | 2012-10-04 |
| 20120252252 | CONNECTOR AND CONNECTING OBJECT - A connector is configured to be mated with and connected to a mating connector in a state where the connector is attached to an FPC having a principal surface on which a signal terminal and a ground terminal are arranged. The connector comprises a housing, a plurality of contacts held by the housing, a cover shell partially covering the housing and a lock bar supported by the housing and/or the cover shell so as to be turnable. Each of the contacts has an exposed portion connectable to the signal terminal of the connecting object. The cover shell has a grounded portion connectable to the ground terminal of the connecting object. The lock bar is configured to lock a mating state where the connector is mated with the mating connector. | 2012-10-04 |
| 20120252253 | POWER CONNECTOR - A power connector, adapted for electrically connecting a cable with a complementary connector, includes an insulative housing defining a number of passageways and a number of power contacts received in corresponding passageway. Each contact has a base section, a first contact section and a second contact section. The base section includes a bottom wall and a first side wall and a second side wall extending perpendicularly from the bottom wall. The first contact section includes a first contact arm and a second contact arm parallel to the first contact arm. The second contact section includes a third contact arm and a fourth contact arm parallel to the third contact arm. | 2012-10-04 |
| 20120252254 | POWER CONNECTOR - A power connector adapted for electrically connecting with a cable includes an insulative housing defining a number of passageways extending therethrough and a number of contacts received in corresponding passageways. A latching arm is formed in each passageway. Each contact has a base section, a contact section extending from the base section, a retention section extending oppositely from the base section, and a side section extending perpendicularly from edges of the base section. The base section of the contact defines a latching hole receiving the latching aim of the insulative housing to thereby secure the contact in the housing. | 2012-10-04 |
| 20120252255 | ELECTRICAL CONNECTOR WITH CANTILEVERED ARM INTEGRALLY FORMED ON METAL SHELL - An electrical connector includes an insulative housing, a number of contacts retained in the insulative housing and a metal shell enclosing the insulative housing. The metal shell includes a top wall defining a pair of slits each extending along a transverse direction, a cutout communicating with the slits and a L-shaped cantilevered arm residing in the slits and the cutout. The cantilevered arm includes a base portion protruding along the transverse direction and situated between the pair of slits and a deformable arm extending into the cutout along a mating direction perpendicular to the transverse direction. The deformable arm comprises a locking protrusion bent upwardly for locking with a notch of a mateable connector. | 2012-10-04 |
| 20120252256 | TRANSCEIVER CONNECTOR HAVING IMPROVED COLLAR CLIP - A transceiver connector ( | 2012-10-04 |
| 20120252257 | CABLE CONNECTOR ASSEMBLY FOR CONNECTING HARD DISK DRIVE - A cable connector assembly includes a first cable connector, a second cable connector, a locking element, and a retaining frame. The first cable connector includes a first base portion. The second cable connector includes a second base portion. The retaining frame includes a front wall. The front wall defines a mounting hole. The mounting hole includes a pair of lengthwise sides and a pair of widthwise sides. The first base portion and the second base portion are slidably received in the mounting hole. The first base portion contacts one of the widthwise sides. The second base portion contacts the first base portion. The locking element is mounted in the mounting hole and squeezed between the second base portion and the other widthwise side to push the second base portion to press on the first base portion. | 2012-10-04 |
| 20120252258 | GUARD FOR CONNECTION POINT OF ADJOINED WIRE CONNECTORS - A cylindrical guard is used for protecting the electrical junction between connectors. The guard is essentially two split cylindrical sections oriented end-to-end with breakaway tabs therebetween. The split cylindrical pieces are hinged, and substantially irreversibly lock together in a “clamshell” like fashion. The resulting guarded junction is less likely to be accidentally disengaged, thereby protecting both property and life. The guard can be removed by cutting, or broken and moved to expose the underlying junction by severing the breakaway tabs. | 2012-10-04 |
| 20120252259 | CABLE GLAND FOR A SHIELDED CABLE - A cable gland ( | 2012-10-04 |
| 20120252260 | ELECTRICAL CONNECTOR ASSEMBLY - A SATA connector assembly is provided with an insulating housing, a plurality of data and power terminals, a PCB and an FFC, wherein the data and power terminals inserted in the insulating housing, the PCB secured to the insulating housing, the FFC soldered on the PCB, the data and power terminals are electrically interconnected the FFC by the PCB. The provision of the unitary construction feature of FFC can save the production cost due to its eliminating cable management equipment and the step of cable managing processes. | 2012-10-04 |
| 20120252261 | MULTI-FUNCTIONAL ADAPTATION WINDER - A multi-functional adaptation winder is provided, which includes a wiring part, a transmission connector, a tapping part, at least one adapter and a connecting kit. The transmission connector is connected with an outlet wire at one end of the wiring part. The tapping part is provided with at least one connector which is connected with an outlet wire at the other end of the wiring part. The adapter is plugged into the connector of the tapping part and is provided with at least one attaching hole at an external portion thereof The connecting kit is provided with at least one attaching segment and a spigot. The spigot is connected with the tapping part, and the attaching segment is matched with the attaching hole. | 2012-10-04 |
| 20120252262 | SYSTEM FOR CONNECTING ELECTRIC CONDUCTORS WITH POTENTIALS WHICH DIFFER FROM ONE ANOTHER AND PLUG-IN ADAPTER FOR THE SYSTEM - The present invention relates to a system for connecting electrical conductors to mutually different potentials, consisting of at least two electrical terminals ( | 2012-10-04 |
| 20120252263 | CONTINUITY MAINTAINING BIASING MEMBER - A post having a first end, a second end, and a flange proximate the second end, wherein the post is configured to receive a center conductor surrounded by a dielectric of a coaxial cable, a connector body attached to the post, a coupling element attached to the post, the coupling element having a first end a second end, and a biasing member disposed within a cavity formed between the first end of the coupling element and the connector body to bias the coupling element against the post is provided. Moreover, a connector body having a biasing element, wherein the biasing element biases the coupling element against the post, is further provided. Furthermore, associated methods are also provided. | 2012-10-04 |
| 20120252264 | METHOD AND APPARATUS FOR A SNAP RETAINED PUSH-ON CONNECTOR WITH PORT ADAPTER - A connector assembly includes a connector body and a tubular post having one end fitted in said connector body for securing a coaxial cable, the post including a basket portion at an opposite end. An adapter is further provided, the adapter having a set of internal threads for engaging the threads of an external interface port, said adapter further including a portion which is sized to engage within the interior of the basket portion of the tubular post. | 2012-10-04 |
| 20120252265 | CONNECTOR ASSEMBLY FOR CORRUGATED COAXIAL CABLE - A connector assembly for a corrugated coaxial cable is provided. The coaxial cable connector assembly comprises a compression member having a first end and a second end, a connector body having a first end and a second end, an insulator, a pin, and a spring basket, wherein the first end of the compression member is structured to receive an exposed end of a corrugated coaxial cable and the second end is structured to receive the first end of the connector body, wherein the connector body is configured to retain the insulator therein and the insulator is configured to retain the pin therein to insulate the pin from the connector body, and wherein the spring basket is configured to couple to an exposed inner conductor of the cable, and wherein the compression member is configured to physically retain the cable and electrically couple an outer conductor of the cable to the connector body while electrically coupling the spring basket to the pin. | 2012-10-04 |
| 20120252266 | INNOVATIVE CABLE TERMINATION SCHEME - Embodiments of the invention use a small piece of flex or rigid PCB as the cable plug. The wires of the cable are soldered onto the pads on the PCB with the pads so arranged that all the ground pads are tied together without needing a separate grounding bar. The signal and GND pads are so aligned such that minimum strip length is required for soldering and the symmetry of the differential signals is maintained. | 2012-10-04 |
| 20120252267 | CONNECTOR HAVING A TAPERED LOCK JONIT - A connector comprising a main body having a first end and a tapered second end, wherein the main body is configured to receive a prepared coaxial cable, and a front body having a tapered first end and a second end, the front body configured to be coupled to the main body, wherein the tapered first end of the front body corresponds to the tapered second end of the main body is provided. Furthermore, an associated method is also provided. | 2012-10-04 |
| 20120252268 | SLIDE ACTUATED COAXIAL CABLE CONNECTOR - There is provided a coaxial cable connector for coupling an end of a coaxial cable to an outer diameter of a threaded interface port. The coaxial cable connector includes a connector body, a tubular inner post, and a sleeve member. The connector body has a first end, an opposing second end, and a bore therethrough. The inner post is disposed within the bore of the connector body, and includes a first end and a second end. The first end is adapted to engage the connector body so as to prevent relative axial movement with the connector body. The second end of the inner post is adapted to be inserted into the end of the coaxial cable. Either the first end of the connector body or the first end of the inner post includes a basket portion adapted to engage the threaded interface port. The basket portion includes an outer diameter, an inner diameter that is less than the outer diameter of the threaded interface port, and a relief element. The relief element is adapted to radially expand the outer diameter of the basket portion upon engaging the interface port. The sleeve member is disposed in overlaying relation to the basket portion, and includes an inner diameter that is less than the expanded outer diameter of the basket portion. The sleeve member is axially movable in relation to the basket portion from a first position to a second position to radially compress the basket portion. | 2012-10-04 |
| 20120252269 | STRUCTURE OF CONNECTOR - An improved structure of connector includes a sheath and a conductive terminal that is received in the sheath. The sheath includes first and second sheath members. The first sheath member has an end forming a flange and an opposite end forming a plurality of elastic segments. The second sheath member forms a receiving chamber in which the first sheath member is receivable and also forms, inside an end thereof, a positioning section on which the elastic segments are positionable. As such, when an external terminal pin is inserted into the second sheath member to engage the conductive terminal, the positioning section retains the elastic segments in position to prevent the insertion of the external terminal pin from being made in an incorrect, deviated direction and thus damaging the conductive terminal. The arrangement of the elastic segments provides the conductive terminal with better capability of bearing external damages. | 2012-10-04 |
| 20120252270 | USB Connector - A USB connector is provided that delivers a large amount of power to a connecting electronic apparatus. The USB connector includes an insulation body, a metal shield, a power contact, and an assistant contact. The metal shield cover the insulation body, and the power contact and the assistant power contact are mounted on the insulation body. Additionally, the power contact and the assistant power contact are configured to be electrically in contact simultaneously with a mating power contact of a mating USB connector. | 2012-10-04 |
| 20120252271 | HIGH SPEED HIGH DENSITY CONNECTOR ASSEMBLY - A high speed connector assembly includes a header and a receptacle. The header includes an array of first contacts arranged in lines and columns, each line of first contacts being grouped in pairs, each of the first contacts having a contacting portion and a number of first shields arranged besides corresponding lines of the first contacts, each of the first shields having a contacting portion. The receptacle has a main body. The main body defines a front face and a number of receiving holes in the front face. The contact portions of each pair of the first contacts and corresponding first shield are received in the same one of the receiving holes when the header and the receptacle are mated. | 2012-10-04 |
| 20120252272 | INSULATING STRUCTURE FOR L-SHAPED TERMINAL - To electromagnetically-shield an L-shaped terminal in a compact and reliable manner while easily and securely fixing the L-shaped terminal, there is employed an insulating split inner housing having an L-shaped terminal receiving portion including an electric-contact-portion-side receiving portion covering an electric contact portion of the L-shaped terminal connected to a shielded wire and a wire-connection-portion-side receiving portion covering a wire connection portion of the L-shaped terminal, the electric-contact-portion-side receiving portion is covered by a conductive shield shell, the wire-connection-portion-side receiving portion is covered by a conductive housing connected to the shield shell and to a shield portion of the shielded wire, and the L-shaped terminal is insulated by the inner housing from the shield shell and the conductive housing. | 2012-10-04 |
| 20120252273 | USB CONNECTOR STRUCTUE - A USB connector structure includes an insulating body, a circuit board, connecting terminals and conductive terminals. The insulating body includes a through notch therein and a plurality of terminal slots at a lower edge of the through notch; the circuit board is coupled to the through notch and has a first surface which set a plurality of goldfingers thereon, and a plurality of blind holes concavely formed at the rear of the goldfingers; each connecting terminal is coupled to a rear end of the circuit board and away from the goldfingers, and electrically connected to each goldfinger through the circuit board; each conductive terminal is coupled to the terminal slot and has a conducting portion disposed at the front of each conductive terminal, and the front of each conducting portion is disposed in the blind hole. | 2012-10-04 |
| 20120252274 | ELECTRICAL CONNECTOR - An electrical connector includes: an insulating body, having a plurality of receiving slots formed through the insulating body; a plurality of conductive terminals, each disposed in one of the receiving slots, wherein the conductive terminal is formed with a solder contact surface, and the solder contact surface is substantially vertical; and a plurality of solders, respectively received in the receiving slots, in which the solder is in a flat shape, and each of the solders is formed with an abutting surface in a flat direction for abutting the solder contact surface. | 2012-10-04 |
| 20120252275 | CONNECTOR TO BE ELECTRICALLY CONNECTED TO CONNECTING TARGET AND TO SUBSTRATE - A connector to be electrically connected to a connecting target including plural electrical objects and to a substrate provided with plural concave portions, includes plural contacts, each including a first terminal configured to extend in a first direction to be connected with the object of the connecting target and include a first contact portion and a second contact portion, a second terminal configured to extend in a second direction opposite to the first direction to be fitted in the concave portion of the substrate, and a base portion configured to be provided with a support portion that separately supports the first contact portion and the second contact portion of the first terminal at different positions and separately support the second terminal from the first terminal. | 2012-10-04 |
| 20120252276 | ELECTRICAL CARD CONNECTOR WITH CONTACTS HAVING SHARED SOLDERING TAIL - An electrical card connector comprises an insulative housing having an inserting slot for receiving a first card and a second card, and a plurality of contacts retained in the housing respectively and including a plurality of first contacts for engaging with the first card, and a plurality of second contacts cooperating with the first contacts for engaging with the second card. The first contacts and the second contacts have retaining portions fixed with the housing, contact portions protruding into the inserting slot from the retaining portions, and soldering portions extending beyond the housing from the retaining portions. The contact portions of the first contacts and the contact portions of the second contacts are positioned at different position along a front-to-back direction. At least one of the first contacts and one of the second contacts share a same soldering tail. | 2012-10-04 |
| 20120252277 | CABLE HAVING ADAPTOR ASSEMBLY - The cable contains a cable member, a first connector electrically connected to an end of the cable member, a split member electrically connected to the other end of the cable member and having at least a second connector, at least an adaptors capable of electrically connecting to the second connector; and a joint member having a ring element for joining to the cable member and at least an extension element for joining to the adaptor. The cable, with the first connector and the other connectors on the adaptors, can be used to interface various appliances. | 2012-10-04 |
| 20120252278 | USB CONNECTOR STRUCTURE - A USB connector structure includes an insulating body, a circuit board, a plurality of connecting terminals and a plurality of conductive terminals. The insulating body includes a through notch, a plurality of terminal slots formed at a lower edge of the through notch, and a stop plate extended forwardly from the terminal slots which forms a plurality of first openings and second openings thereon; the circuit board having a plurality of goldfingers being passed and coupled to the through notch, and the position of each goldfinger is aligned with the first opening; the connecting terminals passed to the circuit board and situated away from the goldfinger and electrically coupled to each goldfinger; each conductive terminal passed into the terminal slot and having a conducting portion at a front end which is aligned with the second opening, so as to prevent the conductive terminals from being shifted or deviated. | 2012-10-04 |
| 20120252279 | Connector And Power Management System For The Same - A connector is provide that disconnects from a power source when not in operation. The connector includes an insulation body holding a first contact and a second contact positioned adjacent thereto. The second contact is movable between a first position in contact with the first contact, and a second position spaced from the first contact to accommodate a mating connector. | 2012-10-04 |
| 20120252280 | CONNECTOR - Two partial locks ( | 2012-10-04 |
| 20120252281 | ELECTRICAL CONNECTOR - An electrical connector includes an insulation pedestal, an outer cover, an enhanced shell and a plurality of terminals partially embedded in the insulation pedestal. The insulation pedestal includes a main body and a tongue section. The enhanced shell includes a fixed side and a support side. The fixed side is embedded in the main body; and the tongue section is partially covered by the support side such that the support side can support the tongue section. The insulation pedestal is integratedly formed together with the terminals and the enhanced shell to strengthen the structure of the tongue section. | 2012-10-04 |
| 20120252282 | CONNECTOR - A connector to be connected to a mating connector, includes a connector main body including a cylindrical member, a supporting member disposed in the cylindrical member, a terminal supported on the supporting member, and a fitting portion having an engaging portion; a movable sleeve including a diameter control portion; an elastic deformation member disposed to be elastically deformable in a radial direction thereof; an accommodating portion disposed between the connector main body and the movable sleeve for accommodating the elastic deformation member; and a transmission unit for transmitting a force in the axial direction from the movable sleeve to the elastic deformation member when the movable sleeve moves, and for transmitting a force in the radial direction from the elastic deformation member to the movable sleeve when the elastic deformation member returns to an original shape. | 2012-10-04 |
| 20120252283 | FUSE TERMINAL - In a fuse terminal in which a frame is formed by a bottom wall part, a pair of sidewall parts and a top wall part, a pair of contact terminals are respectively arranged at right and left positions within the frame, and the tab terminal of a fuse advanced into the frame is inserted between the pair of contact terminals and closely made in contact therebetween by contact loads due to elastic restoring forces of the pair of contact terminals, one of the contact terminals is a wound spring type contact terminal which is formed by being extended from the frame and folded for a plurality of times along the one sidewall part, and the other contact terminal is a leaf-spring type contact terminal which is extended from the frame through a flexible rod part and arranged almost in parallel to the other sidewall part via a gap. | 2012-10-04 |
| 20120252284 | PRESS-FIT CONNECTOR - The present invention provides a press-fit connector in which the presence or absence of buckling of a press-fit pin can be confirmed by visual observation, when the press-fit pin is inserted by pressure into a through hole of a circuit board. The press-fit connector | 2012-10-04 |
| 20120252285 | SHIP CAPABLE OF RUNNING SELECTIVELY WITH LIQUEFIED FUEL GAS MAIN DRIVE ENGINE AND LIQUEFIED FUEL GAS GENERATOR ENGINE - A ship includes: a high-pressure injection engine using fuel gas as fuel to obtain a propulsion power of the ship; a generator engine using fuel gas as fuel to generate electricity; a motor generating a power by using the electricity generated from the generator engine; a propulsion propelling the ship; a main clutch connecting the high-pressure injection engine to the propulsion; an auxiliary clutch connecting the gear box to the propulsion; and a gear box disposed in a front side of the propulsion and power-connected to the main clutch and the auxiliary clutch. The high-pressure injection engine and the motor are selectively power-connected to the propulsion to obtain the propulsion power of the ship. | 2012-10-04 |
| 20120252286 | WATER JET PROPULSION DEVICE - A water jet propulsion device | 2012-10-04 |
| 20120252287 | WATER JET PROPULSION DEVICE - There is provided a water jet propulsion device | 2012-10-04 |
