40th week of 2009 patent applcation highlights part 17 |
Patent application number | Title | Published |
20090242835 | LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal composition is provided that has a wide temperature range of a nematic phase, has a suitable optical anisotropy, has a large negative dielectric anisotropy and has a large specific resistance, and a liquid crystal composition is provided that can increase an optical anisotropy and has a low minimum temperature of a nematic phase, preferably −20° C. or less, while satisfying the aforementioned characteristics. A liquid crystal display device containing the liquid crystal composition is also provided. The liquid crystal composition of the invention has a negative dielectric anisotropy and contains a liquid crystal compound having terphenyl having one or two fluorines replacing hydrogen as a first component and a liquid crystal compound having phenylene having two halogens replacing hydrogens as a second component. The liquid crystal display device of the invention contains the liquid crystal composition. | 2009-10-01 |
20090242836 | X-RAY IMAGING PHOTOSTIMULABLE PHOSPHOR SCREEN OR PANEL - In a method of preparing a phosphor or scintillator layer to become deposited on a support, a vapor depositing step is applied from a crucible unit by heating as phosphor precursor raw materials present in said crucible, a Cs(X,X′) matrix compound and an activator or dopant precursor compound, wherein said crucible unit comprises at least a bottom and surrounding side walls as a container for phosphor precursor raw materials present in said crucible in liquefied form after heating said crucible, and wherein said Cs(X,X′) matrix compound has a higher vapor pressure than said activator or dopant precursor compound, said method comprising a step of providing said activator or dopant compound in form of a precursor raw material represented by the formula Cs | 2009-10-01 |
20090242837 | CHARGE TRANSPORT COMPOSITIONS AND ELECTRONIC DEVICES MADE WITH SUCH COMPOSITIONS - The present invention relates to charge transport compositions. The invention further relates to electronic devices in which there is at least one active layer comprising such charge transport compositions. | 2009-10-01 |
20090242838 | METHOD FOR OBTAINING A SCINTILLATION STRUCTURE - A method for obtaining a scintillation body comprising the steps of readying a matrix of binding material within which is present a plurality of scintillation crystals, obtaining a plurality of channels within the matrix and around the crystals and inserting metallic material having a high atomic number and high density between mutually adjacent scintillation crystals without separating the scintillation crystals from the matrix of binding material. | 2009-10-01 |
20090242839 | Gas-phase infiltration of phosphors into the pore system of inverse opals - The invention relates to a process for the incorporation of volatile phosphors into the pore system of inverse opals by means of gas-phase infiltration, and to corresponding illuminants | 2009-10-01 |
20090242840 | Reversible Water-Free Process for the Separation of Acid-Containing Gas Mixtures - Gas mixtures which comprise acids like HF, HCl and/or HBr and other constituents, especially gas mixtures which comprise or consist of carboxylic acid fluorides, C(O)F | 2009-10-01 |
20090242841 | Combustion Air Preheat Optimization System In An SMR - A process for producing synthesis gas from a furnace, the furnace including a combustion air stream, a convective section and a reformer flue gas stream is presented. The furnace may additionally include a process cooling section and one or several boiler feed water stream. This process includes passing the combustion air stream through a preheat exchanger system in the convective section to preheat the combustion air stream in indirect heat exchange with the reformer flue gas, wherein the temperature of the preheated combustion air is between about 200° F. and about 400° F. The temperature of the preheated combustion air may be between about 225° F. and about 350° F. The temperature of the preheated combustion air may be between about 250° F. and about 325° F. The process may further include passing the boiler feed water stream through heating coils in the process cooling section and the convective section. | 2009-10-01 |
20090242842 | Conducting Polymer Synthesized with Partially Substituted Polymers as a Dopant - Disclosed herein is a method of synthesizing a conducting polymer using a polymer, having a substituent in a part thereof, as a dopant, in which a variety of polymers is substituted with a predetermined functional group to serve as a dopant such that the substituted functional group functions as the dopant of the conducting polymer, or a monomer having a substituent able to act as a dopant is copolymerized to prepare a polymer dopant having a substituent in a part thereof. The partially substituted polymer dopant used in this invention may serve as a dopant upon synthesis of the conducting polymer or upon additional doping of the synthesized polymer. Compared to a conventional monomer dopant, the polymer dopant does not emit low-molecular-weight material, and has higher solubility. Further, compared to a polymer dopant having a substituent such as a sulfonic acid group throughout, the synthesized conducting polymer can have superior mechanical properties and maximum conductivity amounting to 5×10″1 S/cm. | 2009-10-01 |
20090242843 | Method for Manufacturing Silicon Wafer and Silicon Wafer Manufactured by this Method - A method for manufacturing a silicon wafer having a defect-free region in a surface layer, in which at least only a surface layer region to a predetermined depth from a front surface of a silicon wafer to be processed is subjected to heat treatment at a temperature of not less than 1100 degrees C. for not less than 0.01 msec to not more than 1 sec, to thereby make the surface layer defect-free. As a result of this, there is provided a method for manufacturing a silicon wafer, in which a DZ layer without generation of crystal defects from the front surface to a constant depth can be uniformly formed, and oxide precipitates having a steep profile inside the wafer can be secured and controlled with a high degree of accuracy. | 2009-10-01 |
20090242844 | FLAME RESISTANT POLYPHTHALAMIDE/POLY(ARYLENE ETHER) COMPOSITION - Disclosed herein is a flame resistant composition comprising a compatibilized blend of a polyphthalamide and a poly(arylene ether); and a phosphinate, wherein the composition is substantially free of linear aliphatic polyamides. | 2009-10-01 |
20090242845 | PROCESS FOR THE PREPARATION OF AN ANTISTATIC COMPOSITION - The invention relates to the preparation of an antistatic composition comprising adding a liquid or a dissolved ionic substance to a porous polymer and processing the porous polymer together with further additives and further thermoplastic polymers in the melt. The invention relates also to the antistatic composition itself and to its use for rendering polymers antistatic. | 2009-10-01 |
20090242846 | TRANSPARENT ELECTRIC CONDUCTOR - There is provided a transparent electric conductor with reduced variation in electrical resistance in high-temperature environments. The transparent electric conductor comprises conductive particles | 2009-10-01 |
20090242847 | DISPLAY PARTICLES FOR IMAGE DISPLAY APPARATUS AND IMAGE DISPLAY APPARATUS - Display particles, which are used for an image display apparatus having a structure in which the display particles in a powdered state are sealed between two substrates at least one of which is transparent, and by generating an electric field between the substrates, the display particles are moved so that an image is displayed, comprising: base particles A containing at least a resin and a colorant, and having a volume-average particle size D | 2009-10-01 |
20090242848 | ACTUATOR - A conductive polymer doped with a dopant can be expanded and contracted when electrically oxidized and reduced in a driving electrolytic solution containing an anion, and thereby can act as an actuator element in an actuator. The anion is a fluorine-containing ion derived from a strong acid, and the dopant is an aromatic sulfonate ion free of fluorine. The conductive polymer is a polymer containing a 5-membered heterocyclic moiety as a repeating unit, such as a polypyrrole or a polythiophene. When the conductive polymer is in an oxidized state, at least part of the 5-membered heterocyclic moieties has a carbonyl group. | 2009-10-01 |
20090242849 | GRAPHITE MATERIAL, CARBON MATERIAL FOR BATTERY ELECTRODE, AND BATTERY - A carbon raw material such as a green coke in which loss on heat when it is heated from 300 to 1200° C. under an inert atmosphere is no less than 5% by mass and no more than 20% by mass is pulverized and then the pulverized carbon raw material is graphitized to obtain a graphite material suitable for a carbon material for anode in a lithium-ion secondary battery or the like that enables to make electrodes having a high-energy density and a large-current load characteristic since it has a small specific surface area and a small average particle diameter while maintaining high beginning efficiency and a high discharge capacity in the first round of charging and discharging. And an electrode for batteries are obtained using the graphite material. | 2009-10-01 |
20090242850 | CONDUCTIVE POLYMER-CARBON NANOTUBE COMPOSITE AND MANUFACTURING METHOD THEREOF - Provided are a conductive polymer-carbon nanotube composite including a carbon nanotube and a conductive polymer filled therein, and a method of manufacturing the same. The conductive polymer-carbon nanotube composite where a conductive polymer is filled in a carbon nanotube is manufactured by introducing a monomer of the conductive polymer into the carbon nanotube using a supercritical fluid technique and polymerizing the monomer. The conductive polymer-carbon nanotube composite is a novel nano-structure material which can overcome limitations that conventional materials may have, and thus can be applied to various applications such as sensors, electrode materials, nanoelectronic materials, etc. | 2009-10-01 |
20090242851 | ZnO DEPOSITION MATERIAL AND ZnO FILM FORMED OF THE SAME - A ZnO deposition material to be used for forming a transparent conductive film is composed of a ZnO pellet made of ZnO powder having a ZnO purity of 98% or more. The pellet includes one or more kinds of elements selected from the group consisting of Y, La, Sc, Ce, Pr, Nd, Pm and Sm. The ZnO pellet is polycrystal or monocrystal. The ZnO film formed by a vacuum film forming method employing the ZnO deposition material as a target material can exhibit excellent conductivity. The vacuum film forming method is preferably an electron beam vapor deposition method, an ion plating method or a sputtering method. | 2009-10-01 |
20090242852 | DEPOSITION OF TERNARY OXIDE FILMS CONTAINING RUTHENIUM AND ALKALI EARTH METALS - Methods and compositions for the deposition of ternary oxide films containing ruthenium and an alkali earth metal. | 2009-10-01 |
20090242853 | Process For Producing Niobium Suboxide - A method is described for preparing a niobium suboxide represented by the formula, NbO | 2009-10-01 |
20090242854 | ADDITIVES AND MODIFIERS FOR SOLVENT- AND WATER-BASED METALLIC CONDUCTIVE INKS - A conductive ink includes metallic nanoparticles, a polymeric dispersant, and a solvent. The polymeric dispersant may be ionic, non-ionic, or any combination of ionic and non-ionic polymeric dispersants. The solvent may include water, an organic solvent, or any combination thereof. The conductive ink may include a stabilizing agent, an adhesion promoter, a surface tension modifier, a defoaming agent, a leveling additive, a rheology modifier, a wetting agent, an ionic strength modifier, or any combination thereof. | 2009-10-01 |
20090242855 | VOLTAGE SWITCHABLE DIELECTRIC MATERIALS WITH LOW BAND GAP POLYMER BINDER OR COMPOSITE - A composition is provided that includes a polymer binder, and one or more classes of particle constituents. At least one class of particle constituents includes semiconductive particles that individually have a band gap that is no greater than 2 eV. As VSD material, the composition is (i) dielectric in absence of a voltage that exceeds a characteristic voltage level, and (ii) conductive with application of said voltage that exceeds the characteristic voltage level. | 2009-10-01 |
20090242856 | BIREFRINGENT METAL-CONTAINING COORDINATION POLYMERS - This application relates to metal-containing coordination polymers having high birefringent values. For example, polymers having birefringent values within the range of 0.07 to 0.45 are described. The polymers may comprise units having the formula M(L) | 2009-10-01 |
20090242857 | NON-FLAMMABLE WATERPROOFING COMPOSITION - A composition of matter and a solvent system for use in providing a water resistant coating to a surface of a roof is disclosed. The solvent system comprises a chlorinated solvent blend which includes a vegetable oil. The solvent system and coating composition are non-flammable, environmentally friendly and provide an improved, consistent coating when applied to the surface of a roof. | 2009-10-01 |
20090242858 | Water-Based Fire Resistant Lubricant - The present invention relates to a method for using a water-based fluid composition to lubricate metal-metal surfaces in contact with each other in a non-hydraulic system, wherein at least one of the metal surfaces is moving. The invention also relates to a water-based fluid composition for use as a lubricant in the described method. | 2009-10-01 |
20090242859 | PROBE BAR REMOVER - A probe bar remover ( | 2009-10-01 |
20090242860 | CABLE INSTALLATION - A method of installing a cable into a conduit, the conduit having more than one bore size, comprising the steps of—introducing air to flow in a direction into and through the conduit, and—changing an air pressure level of the air within the conduit from a first pressure level to a second pressure level by either venting a part of the air from the conduit or adding to the air within the conduit. | 2009-10-01 |
20090242861 | POWER CABLE - A winch system with a force cable that transmits electrical current and/or digital data to the load. For example, the force cable, including a power line and/or a signal line and includes at least: (i) a first portion extending from the load to the drum; and (ii) a second portion that is wound around the drum. If there is a power line in the force cable it is electrically connected to an electrical commutator by a rotating current path. If there is a signal line in the force cable it is connected in data communication to a data signal commutator by a rotating communication path. The commutator also has an input for receiving electrical current and/or digital data, as appropriate. The commutator transmits the electrical current and/or digital data from its input to the rotating current path and/or communication path. The drum defines an axial channel extending from at least one end of the drum along its axial direction, and current path(s) and/or communication path(s) are routed through the channel. There is a distribution box at a first axial end of the drum and the commutator is at the second axial end of the drum. The drum includes at least one radial channel that includes: (i) a first portion for receiving a force bearing member of the force cable from outside of the drum; and (ii) a second portion for guiding at least a portion of the current path(s) and/or the communication path(s) from outside of the drum to the axial channel. | 2009-10-01 |
20090242862 | UNIVERSAL JACK STAND - A jack stand for a vehicle includes a plurality of walls joined together to form a body, the body being hollow. A base is formed by lower edges of the walls and a top surface joins top edges of the walls. One of the walls includes a wall opening and the top includes a top opening, the wall opening and the top opening extending towards one another, meeting proximate the top edge of one of the walls, thereby forming a single, continuous opening extending from the top into one of the walls. | 2009-10-01 |
20090242863 | ENERGY ABSORBING POST FOR ROADSIDE SAFETY DEVICES - An energy-absorbing post for absorbing the impact energy of an errant vehicle wherein the impact energy is absorbed by out-of-place deformation in the material of the post. Out-of-plane deformation is provided by utilizing a through bolt extending through a splice connection between upper and lower posts sections. Alternatively, out-of-plane deformation is provided by leaving an axial gap on a splice bolts. For terminal applications, a single through-bolt is utilized to allow the upper post section to pivot during end on impacts. Bolt tear out facilitators, including stress concentrators and pre-buckles, or an angled through-bolt decrease any initially high tear-out forces. Direct out-of-plane deformation is provided by extending a tab from a splice plate and connecting the tab to the post, by forming one or more slots in an upstream lateral face of the post and directly welding a splice plate near the slots, or by connecting a bent over splice plate on opposing planar sides thereof to facilitate out-of-plane deformation in a weldment area between the plate and the post. | 2009-10-01 |
20090242864 | RAILINGS - A railing mounting component ( | 2009-10-01 |
20090242865 | MEMORY ARRAY WITH DIODE DRIVER AND METHOD FOR FABRICATING THE SAME - A method of fabricating a memory array. The method begins with a structure, generally composed of dielectric fill material and having conductive lines formed at its lower portion, and a sacrificial layer formed on its upper surface. Diodes are formed in the fill material, each diode having a lightly-doped first layer of the same conductivity type as the conductive lines; a heavily doped second layer of opposite conductivity type; and a conductive cap. Self-aligned vias are formed over the diodes. Self-aligned, and self-centered spacers in the self-aligned vias define pores that expose the conductive cap. Memory material is deposited within the pores, the memory material making contact with the conductive cap. A top electrode is formed in contact with the memory material. | 2009-10-01 |
20090242866 | Phase change memory device and method of fabricating the same - A semiconductor device includes an insulating layer on a substrate, a first electrode in the insulating layer having a first upper surface and a second upper surface, a second electrode in the insulating layer spaced apart from the first electrode by a first distance and having a third upper surface and a fourth upper surface, the third upper surface being disposed at a substantially same level as the first upper surface, and the fourth upper surface being disposed at a substantially same level as the second upper surface, a first phase change material pattern covering a part of the first upper surface of the first electrode, and a second phase change material pattern covering a part of the third upper surface of the second electrode, wherein an interface region between the second phase change pattern and the second electrode is spaced apart from an interface region between the first phase change pattern and the first electrode by a second distance greater than the first distance. | 2009-10-01 |
20090242867 | PHASE CHANGE MEMORY DEVICE HAVING PROTECTIVE LAYER FOR PROTECTING PHASE CHANGE MATERIAL AND METHOD FOR MANUFACTURING THE SAME - A phase change memory device includes a semiconductor substrate, a plurality of bottom electrodes formed on the substrate, a plurality of phase change structures formed on the semiconductor substrate, each respectively contacting one of the bottom electrodes, and each having a phase change material layer and a top electrode stacked one upon the other, and a protective layer formed to a substantially uniform thickness on surfaces of the plurality of phase change structures and the semiconductor substrate, wherein the protective layer contains diffusion barrier ions. | 2009-10-01 |
20090242868 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A solid electrolyte memory involves a problem that stable rewriting is difficult since the amount of ions in the solid electrolyte and the shape of the electrode are changed by repeating rewriting. In a semiconductor device in which information is stored or the circuit connection is changed by the change of resistance of the solid electrolyte layer, the solid electrolyte layer includes a composition, for example, of Cu—Ta—S and an ion supply layer in adjacent or close therewith as Cu—Ta—O, in which ions supplied from the ion supply layer form a conduction path in the solid electrolyte layer thereby making it possible to store information by the level of the resistance and applying the electric pulse to change the resistance, in which the ion supply layer includes crystals having, for example, a compositional ratio of: Cu—Ta—O=1:2:6 and rewriting operation can be performed stably. | 2009-10-01 |
20090242869 | SUPER LATTICE/QUANTUM WELL NANOWIRES - Segmented semiconductor nanowires are manufactured by removal of material from a layered structure of two or more semiconductor materials in the absence of a template. The removal takes place at some locations on the surface of the layered structure and continues preferentially along the direction of a crystallographic axis, such that nanowires with a segmented structure remain at locations where little or no removal occurs. The interface between different segments can be perpendicular to or at angle with the longitudinal direction of the nanowire. | 2009-10-01 |
20090242870 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein is a light emitting device. The light emitting device includes an n-type nitride semiconductor layer; an active layer on the n-type semiconductor layer, an AlN/GaN layer of a super lattice structure formed by alternately growing an AlN layer and a GaN layer on the active layer, and a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure. At least one of the AlN layer and the GaN layer is doped with a p-type dopant. A method for manufacturing the light emitting device is also provided. | 2009-10-01 |
20090242871 | Quantum Dot Inorganic Electroluminescent Device - An inorganic EL device is provided with a substrate, a first electrode, a first insulating layer, a light emitting layer, a second insulating layer and a second electrode. The inorganic EL light emitting device is characterized in that the light emitting layer contains a quantum dot and is arranged between the first insulating layer and the second insulating layer by being brought into contact with each of the insulating layers. | 2009-10-01 |
20090242872 | DOUBLE QUANTUM WELL STRUCTURES FOR TRANSISTORS - Double quantum well structures for transistors are generally described. In one example, an apparatus includes a semiconductor substrate, one or more buffer layers coupled to the semiconductor substrate, a first barrier layer coupled to the one or more buffer layers, a first quantum well channel coupled with the first barrier layer wherein the first quantum well channel includes a group III-V semiconductor material or a group II-VI semiconductor material, or combinations thereof, a second barrier layer coupled to the first quantum well channel, and a second quantum well channel coupled to the barrier layer wherein the second quantum well channel includes a group III-V semiconductor material or a group II-VI semiconductor material, or combinations thereof. | 2009-10-01 |
20090242873 | SEMICONDUCTOR HETEROSTRUCTURES TO REDUCE SHORT CHANNEL EFFECTS - Semiconductor heterostructures to reduce short channel effects are generally described. In one example, an apparatus includes a semiconductor substrate, one or more buffer layers coupled to the semiconductor substrate, a first barrier layer coupled to the one or more buffer layers, a back gate layer coupled to the first barrier layer wherein the back gate layer includes a group III-V semiconductor material, a group II-VI semiconductor material, or combinations thereof, the back gate layer having a first bandgap, a second barrier layer coupled to the back gate layer wherein the second barrier layer includes a group III-V semiconductor material, a group II-VI semiconductor material, or combinations thereof, the second barrier layer having a second bandgap that is relatively larger than the first bandgap, and a quantum well channel coupled to the second barrier layer, the quantum well channel having a third bandgap that is relatively smaller than the second bandgap. | 2009-10-01 |
20090242874 | GaN BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING SAME - A GaN based semiconductor light-emitting device is provided. The light-emitting device includes a first GaN based compound semiconductor layer of an n-conductivity type; an active layer; a second GaN based compound semiconductor layer; an underlying layer composed of a GaN based compound semiconductor, the underlying layer being disposed between the first GaN based compound semiconductor layer and the active layer; and a superlattice layer composed of a GaN based compound semiconductor doped with a p-type dopant, the superlattice layer being disposed between the active layer and the second GaN based compound semiconductor layer. | 2009-10-01 |
20090242875 | FORMING ELECTRODES TO SMALL ELECTRONIC DEVICES HAVING SELF-ASSEMBLED ORGANIC LAYERS - In one embodiment of the invention, a method of fabricating a SAM device comprises the steps of: (a) providing a substrate having a top surface and a first metal electrode disposed on the top surface, (b) annealing the first metal electrode, (c) forming a SAM layer on a major surface of the first electrode, the SAM layer having a free surface such that the SAM is disposed between the free surface and the major surface of the first electrode, and (d) forming a second metal electrode on the free surface of the molecular layer. Forming step (d) includes the step of (d1) depositing the second metal electrode in at least two distinct depositions separated by an interruption period of time when essentially no deposition of the second metal takes place. SAM FETs fabricated using this method are also described. | 2009-10-01 |
20090242876 | CARBAZOLE COMPOUNDS - The present invention relates to carbazole compounds of formula (I) and a semiconducting material comprising such carbazole compounds. It also relates to a process for the preparation of such carbazole compounds, as well as to the use thereof as a semiconducting material, in particular as a host matrix for phosphorescent emitters. | 2009-10-01 |
20090242877 | OLED DEVICE WITH HOLE-TRANSPORT AND ELECTRON-TRANSPORT MATERIALS - The invention provides an OLED device comprising, in the following order, a anode, a hole transporting layer (HTL), a light-emitting layer (LEL) comprising a host molecule and a light-emitting molecule, an electron transporting layer (ETL) and an cathode and wherein: | 2009-10-01 |
20090242878 | OPTIMIZATION OF NEW POLYMER SEMICONDUCTORS FOR BETTER MOBILITY AND PROCESSIBALITY - In accordance with the invention, there are polymers (II) having the formula: | 2009-10-01 |
20090242879 | Optoelectronic device and method of fabricating the same - A modified isolated polypeptide comprising an amino acid sequence encoding a photocatalytic unit of a photosynthetic organism being capable of covalent attachment to a solid surface and having a photocatalytic activity when attached thereto is disclosed. | 2009-10-01 |
20090242880 | THERMALLY STABILIZED ELECTRODE STRUCTURE - Memory devices and methods for manufacturing are described herein. A memory device as described herein includes a first electrode layer, a second electrode layer, and a thermal isolation structure comprising a layer of thermal isolation material between the first and second electrode layers. The first and second electrode layers and the thermal isolation structure define a multi-layer stack having a sidewall. A sidewall conductor layer comprising a sidewall conductor material is on the sidewall of the multi-layer stack. The sidewall conductor material has an electrical conductivity greater than that of the thermal isolation material. A memory element comprising memory material is on the second electrode layer. | 2009-10-01 |
20090242881 | THIN FILM TRANSISTOR SUBSTRATE, DISPLAY DEVICE HAVING THE SAME AND METHOD OF MANUFACTURING THE DISPLAY DEVICE - A thin film transistor substrate includes an insulating plate; a gate electrode disposed on the insulating plate; a semiconductor layer comprising a metal oxide, wherein the metal oxide has oxygen defects of less than or equal to 3%, and wherein the metal oxide comprises about 0.01 mole/cm | 2009-10-01 |
20090242882 | THREE-DIMENSIONAL MICROSTRUCTURES AND METHODS FOR MAKING SAME - Microstructures can be formed as patterned layers on a substrate and then erecting the microstructures out of the plane of the substrate. The microstructures may be formed over circuits in the substrate. In some embodiments the patterned layer provides resiliently-flexible members such as cantilevers or springs that can be buckled to permit an edge defined by the patterned layer to engage a surface of the substrate. In some embodiments deformation of the resiliently-flexible members results the edge being forced against the substrate. Such microstructures may be applied in a wide range of applications including supporting optical elements, sensors, antennas or the like out of the plane of a substrate. Examples of accelerometer structures are described. | 2009-10-01 |
20090242883 | Thin film transistor, active array substrate and method for manufacturing the same - A thin film transistor, an active array substrate having the same and methods for manufacturing the same are provided. The thin film transistor includes a base having a concave; a gate disposed in the concave; a gate insulator covering the gate and a portion of the gate insulator is in the concave; a channel layer disposed on the gate insulator; and a source and a drain are disposed on the channel layer and located in response to two sides of the gate. | 2009-10-01 |
20090242884 | Method of producing display device, display device, method of producing thin-film transistor substrate, and thin-film transistor substrate - A method of producing a display device includes the steps of forming gate electrodes on a substrate so that an arrangement of a source and a drain, in a pixel row direction, of a thin-film transistor formed in each of pixels on the substrate is reversed every pixel row; forming a gate insulating film and an amorphous semiconductor thin film on the substrate in that order so as to cover the gate electrodes; crystallizing the semiconductor thin film by irradiating the semiconductor thin film with an energy beam so that a scanning direction of the energy beam is the same with respect to the arrangement of the source and the drain in the pixel row direction; and forming a light-emitting element connected to the thin-film transistor. | 2009-10-01 |
20090242885 | MANUFACTURING PROCESS OF LIQUID CRYSTAL DISPLAY DEVICE, AND LIQUID CRYSTAL DISPLAY DEVICE - A manufacturing process of an LCD de vice of the invention includes forming a first substrate provided with a pixel part with thin film transistors and a seal portion arranged around the pixel part, forming a second substrate opposed to the first substrate, filling a liquid crystal layer between the first substrate and the second substrate, and adhering the first substrate to the second substrate with a sealant provided for the seal portion, wherein the forming the first substrate includes forming a semiconductor layer composing the thin film transistor, forming in the seal portion a semiconductor connection layer made of a same material as the semiconductor layer, and forming an organic interlayer insulating film, wherein the forming the semiconductor layer and the forming the semiconductor connection layer are performed in the same step. | 2009-10-01 |
20090242886 | THIN FILM TRANSISTOR SUBSTRATE - In forming a thin film transistor using multi-tone exposure, a wiring width of a foundational wiring is 40 μm or less, and a ratio of a wiring width of a foundational wiring in a dense case to a space between adjacent wirings is 1.7, preferably 1.0 or less. | 2009-10-01 |
20090242887 | Display Substrate Having a Transparent Conductive Layer Made of Zinc Oxide and Manufacturing Method Thereof - A display substrate is disclosed comprising: a supporting substrate; an organic resin layer formed on the supporting substrate; and a transparent electrode formed on the organic resin layer, wherein the transparent electrode includes: a first layer containing a zinc oxide and formed in close contact with the organic resin layer; and a second layer containing a zinc oxide and which has a thickness thicker than a thickness of the first layer and is formed on the first layer, wherein the first layer is deposited by either one of a DC sputtering and a DC magnetron sputtering, and the second layer is deposited by any one of a radio frequency sputtering, a radio frequency magnetron sputtering, a radio frequency superimposing a DC sputtering, and a radio frequency superimposing a DC magnetron sputtering, and the display substrate is available, for example, as the substrate having a transparent electrode for counter electrode of liquid crystal display device. | 2009-10-01 |
20090242888 | Display Device and Method for Manufacturing the Same - In a pixel portion, a scan signal line and an auxiliary capacitor line are formed using a second conductive film, and a data signal line is formed using a first conductive film. In a TFT portion, a gate electrode is formed using the first conductive film and electrically connected to the scan signal line formed using the second conductive film through an opening in a gate insulating film. Further, a source electrode and a drain electrode are formed using the second conductive film. In the auxiliary capacitor portion, the auxiliary capacitor line formed using the second conductive film serves as a lower electrode, the pixel electrode serves as an upper electrode, and the passivation film used as a dielectric film is interposed between the capacitor electrodes. | 2009-10-01 |
20090242889 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY - Disclosed is a thin film transistor which is characterized by including a gate electrode | 2009-10-01 |
20090242890 | SEMICONDUCTOR DEVICE, ELECTROOPTICAL APPARATUS, AND ELECTRONIC SYSTEM - A semiconductor device on a flexible substrate includes a semiconductor layer constituting a plurality of bottom-gate thin-film transistors, first wiring lines, second wiring lines, a first insulating layer, and a gate insulating film. The first insulating layer and the gate insulating film are present below the semiconductor layer, the first wiring lines, and the second wiring lines and are partially removed in regions where the semiconductor layer, the first wiring lines, and the second wiring lines are not disposed. | 2009-10-01 |
20090242891 | THIN-FILM SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A thin-film semiconductor device including a transparent insulating substrate, an island semiconductor layer formed on the transparent insulating substrate and including a source region containing a first-conductivity-type impurity and a drain region containing a first-conductivity-type impurity and spaced apart from the source region, a gate insulating film and a gate electrode which are formed on a portion of the island semiconductor layer, which is located between the source region and the drain region, a sidewall spacer having a 3-ply structure including a first oxide film, a nitride film and a second oxide film, which are respectively formed on a sidewall of the gate electrode, and an interlayer insulating film covering the island semiconductor layer and the gate electrode. | 2009-10-01 |
20090242892 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - In fabricating a thin film transistor, an active layer comprising a silicon semiconductor is formed on a substrate having an insulating surface. Hydrogen is introduced into The active layer. A thin film comprising SiO | 2009-10-01 |
20090242893 | Semiconductor device, production method thereof, and display device - The present invention provides a semiconductor device which can be produced by simple and cheap processes and effectively achieve improved performances and a reduced electric power consumption. Further, the present invention provides a production method thereof and a display device including the semiconductor device or a semiconductor device produced by the production method. The present invention is a semiconductor device including a pixel part and an integrated circuit part on a substrate, the pixel part including a switching element having a gate electrode formed on a semiconductor thin film, the integrated circuit part including a semiconductor layer on a gate electrode, wherein a passivation film is formed on the gate electrode in the pixel part. | 2009-10-01 |
20090242894 | Thin-Film-Transistor Structure, Pixel Structure and Manufacturing Method Thereof - A thin-film-transistor (TFT) structure, a pixel structure and a manufacturing method thereof are provided. The TFT structure is formed in the pixel structure of a liquid crystal display (LCD). The TFT structure comprises a gate, a first dielectric layer, a patterned semiconductor layer, a second dielectric layer and a third dielectric layer stacked sequentially. The second dielectric layer and the third dielectric layer are formed on part of the patterned semiconductor layer to define a covered region and an uncovered region on the patterned semiconductor layer. The uncovered region of the second dielectric layer and the third dielectric layer jointly define an opening, which has at least one top lateral dimension and a bottom lateral dimension smaller than the top lateral dimension. Thereby, a lightly doped structure is formed in a portion of the covered region via the second dielectric layer after ion implantation. | 2009-10-01 |
20090242895 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, AND ORGANIC LIGHTING EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor, a method of fabricating the same, and an organic light emitting diode display device including the same. The thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate, including a channel region, source/drain regions, and a body contact region; a gate insulating layer disposed on the semiconductor layer so as to expose the body contact region; a gate electrode disposed on the gate insulating layer, so as to contact the body contact region; an interlayer insulating layer disposed on the gate electrode; and source/drain electrodes disposed on the interlayer insulating layer and electrically connected to the source/drain regions. The body contact region is formed in an edge of the semiconductor layer. | 2009-10-01 |
20090242896 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A microstructure and a semiconductor element which are included in a micromachine have been generally formed in different steps. It is an object to provide a method for manufacturing a micromachine in which a microstructure and a semiconductor element are formed over one insulating substrate. A feature of the invention is a micromachine including a movable layer containing polycrystalline silicon which is thermally crystallized or crystallized by a laser using metal and a space below or above the layer. Such polycrystalline silicon has high strength and is formed on an insulating surface, so that it is used as a microstructure and used for forming a semiconductor element. Accordingly, a semiconductor device in which a microstructure and a semiconductor element are formed over one insulating substrate can be formed. | 2009-10-01 |
20090242897 | INDIUM GALLIUM NITRIDE-BASED OHMIC CONTACT LAYERS FOR GALLIUM NITRIDE-BASED DEVICES - Light emitting devices include a gallium nitride-based epitaxial structure that includes an active light emitting region and a gallium nitride-based outer layer, for example gallium nitride. A indium nitride-based layer, such as indium gallium nitride, is provided directly on the outer layer. A reflective metal layer or a transparent conductive oxide layer is provided directly on the indium gallium nitride layer opposite the outer layer. The indium gallium nitride layer forms a direct ohmic contact with the outer layer. An ohmic metal layer need not be used. Related fabrication methods are also disclosed. | 2009-10-01 |
20090242898 | METHOD OF CONTROLLING STRESS IN GALLIUM NITRIDE FILMS DEPOSITED ON SUBSTRATES - Methods of controlling stress in GaN films deposited on silicon and silicon carbide substrates and the films produced therefrom are disclosed. A typical method comprises providing a substrate and depositing a graded gallium nitride layer on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply. A typical semiconductor film comprises a substrate and a graded gallium nitride layer deposited on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply. | 2009-10-01 |
20090242899 | Epitaxial Growth on Low Degree Off-Axis SiC Substrates and Semiconductor Devices Made Thereby - A method of epitaxially growing a SiC layer on a single crystal SiC substrate is described. The method includes heating a single-crystal SiC substrate to a first temperature of at least 1400° C. in a chamber, introducing a carrier gas, a silicon containing gas and carbon containing gas into the chamber; and epitaxially growing a layer of SiC on a surface of the SiC substrate. The SiC substrate is heated to the first temperature at a rate of at least | 2009-10-01 |
20090242900 | MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - The invention discloses a memory device and method thereof. The memory device comprises a substrate, an insulator layer, a first conducting layer, a CaCu | 2009-10-01 |
20090242901 | SiC MOSFETS AND SELF-ALIGNED FABRICATION METHODS THEREOF - The present invention provides a method of fabricating a metal oxide semiconductor field effect transistor. The method includes the steps of forming a source region on a silicon carbide layer and annealing the source region. A gate oxide layer is formed on the source region and the silicon carbide layer. The method further includes providing a gate electrode on the gate oxide layer and disposing a dielectric layer on the gate electrode and the gate oxide layer. The method further includes etching a portion of the dielectric layer and a portion of the gate oxide layer to form sidewalls on the gate electrode. A metal layer is disposed on the gate electrode, the sidewalls and the source region. The method further includes forming a gate contact and a source contact by subjecting the metal layer to a temperature of at least about 800° C. The gate contact and the source contact comprise a metal silicide. The distance between the gate contact and the source contact is less than about 0.6 μm. A vertical SiC MOSFET is also provided. | 2009-10-01 |
20090242902 | LIGHT EMITTING DEVICES WITH CONSTANT FORWARD VOLTAGE - A light emitting device and method for producing the same is disclosed. The light emitting device includes a semiconductor material, an electrode positioned on the semiconductor material, a wire bonding area, and a resistor connected between the wire bonding area and the electrode. | 2009-10-01 |
20090242903 | LUMINOUS BODY WITH LED DIES AND PRODUCTION THEREOF - A luminous body comprises a transparent plastic moulding with indentations, and LED DIEs disposed within the indentations. One side of each LED DIE lies approximately flush with an upper side of the moulding, and each LED DIE is connected to an electricity supply via electrical conductors disposed on the moulding. A method for producing such a luminous body is also disclosed. | 2009-10-01 |
20090242904 | Semiconductor Light Emitting Apparatus and Optical Print Head - A semiconductor light emitting apparatus is supplied capable of providing a high performance that can optimize simultaneously both an electrical characteristic and a light emitting characteristic. The semiconductor apparatus comprises an anode layer; a cathode layer that has a conductive type different from that of the anode layer; a gate layer that controls an electrical conduction between the anode layer and the cathode layer; an active layer that is set between the anode layer and the cathode layer and emits light through recombination of electron and positive hole; a first cladding layer that is set on one surface of the active layer and has an energy band gap larger than that of the active layer; and a second cladding layer that is set on other surface of the active layer, has an energy band gap larger than that of the active layer and has a conductive type different from that of the first cladding layer, wherein a thickness of the gate layer is or below a mean free path of carriers implanted into the gate layer. | 2009-10-01 |
20090242905 | SEMICONDUCTOR DEVICE, OPTICAL PRINT HEAD AND IMAGE FORMING APPARATUS - A semiconductor device and an optical print head, an image forming apparatus that has the semiconductor device are supplied capable of reduce occurrence probability of defect. The semiconductor device is formed by using semiconductor thin film bonded on the substrate, and includes a covering layer that covers at least one part region of the semiconductor thin film and covers at least one part of electroconductive member connecting with the semiconductor thin film. | 2009-10-01 |
20090242906 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING UNIT - A semiconductor light emitting device includes: an outer surrounding body having a recessed portion formed in an upper surface of the outer surrounding body; a lead terminal led out from a side surface of the outer surrounding body; and a semiconductor light emitting element disposed in the recessed portion. The outer surrounding body has a cut portion formed at a corner defined by a cross point of extension lines of adjacent sides in a planar outline of the outer surrounding body viewed from the upper surface of the outer surrounding body. The lead terminal is led out from the cut portion. | 2009-10-01 |
20090242907 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - To achieve enlargement and high definition of a display portion, a single crystal semiconductor film is used as a transistor in a pixel, and the following steps are included: bonding a plurality of single crystal semiconductor substrates to a base substrate; separating part of the plurality of single crystal semiconductor substrates to form a plurality of regions each comprising a single crystal semiconductor film over the base substrate; forming a plurality of transistors each comprising the single crystal semiconductor film as a channel formation region; and forming a plurality of pixel electrodes over the region provided with the single crystal semiconductor film and a region not provided with the single crystal semiconductor film. Some of the transistors electrically connecting to the pixel electrodes formed over the region not provided with the single crystal semiconductor film are formed in the region provided with the single crystal semiconductor film. | 2009-10-01 |
20090242908 | PLANAR LIGHT SOURCE DEVICE - A planar light source device includes: a substrate having a thickness larger than 0.9 mm and including a metal layer; and a plurality of light-emitting diode chips disposed on the substrate in a matrix array. Each light-emitting diode chip has a chip size ranging from 0.0784 mm | 2009-10-01 |
20090242909 | LIGHT-EMITTING DEVICE, LINEAR LIGHT SOURCE, PLANAR LIGHT UNIT AND DISPLAY APPARATUS - A light-emitting device used in a linear array of a plurality of them includes a semiconductor light-emitting element, a substrate on which the semiconductor light-emitting element is mounted, and a light-transmitting sealing resin formed on the front surface of the substrate to seal the semiconductor light-emitting element. Of each of the peripheral edge surfaces of the substrate and the sealing resin, at least one side surface that faces in the direction of the array is inclined in the array direction. | 2009-10-01 |
20090242910 | LIGHT EMITTING DEVICE - A light emitting device includes: a first semiconductor region; a second semiconductor region and third semiconductor region which are provided in the first semiconductor region; a first semiconductor light emitting element of which first electrode is electrically connected to a main surface of the second semiconductor region; a second semiconductor light emitting element of which third electrode is electrically connected to a main surface of the third semiconductor region; and a conductor which electrically connects the second electrode of the first semiconductor light emitting element and the third semiconductor region, and which electrically connects the second electrode and the third electrode through the third semiconductor region. In the light emitting device, the semiconductor light emitting elements are connected in series, and are directly connected to a power source. | 2009-10-01 |
20090242911 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE - An object of the present invention is to provide an organic light-emitting display device using a number of organic light-emitting elements that emit lights of different colors, wherein the life of the organic light-emitting elements that emits light of a color having a short life can be prolonged. According to the present invention, a hole injection layer | 2009-10-01 |
20090242912 | MULTIFUNCTIONAL TAPE - A method comprises forming elongate structures ( | 2009-10-01 |
20090242913 | SILICON BASED LIGHT EMITTING DIODE - Provided is a highly efficient silicon-based light emitting diode (LED) including a Distributed Bragg Reflector (DBR), an n-type doping layer, and a p-type substrate structure. The silicon-based LED includes: a substrate having a p-type mesa substrate structure; an active layer that is formed on the substrate and has a first surface and a second surface opposite the first surface; a first reflective layer facing the first surface of the active layer; a second reflective layer that is located on either side of the p-type substrate structure and faces the second surface of the active layer; an n-type doping layer sandwiched between the active layer and the first reflective layer; a first electrode electrically connected to the n-type doping layer; and a second electrode electrically connected to the p-type substrate structure. | 2009-10-01 |
20090242914 | LED ASSEMBLY WITH HIGH HEAT DISSIPATING CAPABILITY - An LED assembly includes a substrate and a plurality of LEDs mounted on the substrate. Each LED comprises an LED die mounted on the substrate via an adhesive, a base spacedly surrounding the LED die, a pair of leads inserted in the base to be in electrical connection with the LED die, and an encapsulant sealing the LED die and inner parts of the leads therein. A thickness of the adhesive is selected to be less than 0.01 inches. The substrate contains a kind of coolant therein to rapidly remove heat from the LED die to atmosphere. | 2009-10-01 |
20090242915 | Semiconductor light-emitting device - A semiconductor light-emitting device includes: a hollow body including a bottom wall and a surrounding wall cooperating with the bottom wall to define an encapsulant-receiving recess, the bottom wall being formed with a through-hole, the surrounding wall having a diffuse surface that surrounds the encapsulant-receiving recess; a heat-dissipating body provided on a bottom side of the bottom wall and covering the through-hole in the bottom wall; a light-emitting chip disposed in the through-hole in the bottom wall; a transparent encapsulant filling the encapsulant-receiving recess and the through-hole; and a wavelength-converting layer covering the transparent encapsulant. | 2009-10-01 |
20090242916 | Method for packaging a light emitting device - A method for packaging a light emitting element includes a step of providing a carrier formed with an anode electrode and a cathode electrode, a step of providing a light emitting object by utilizing a light emitting diode chip having a positive and negative electrodes, a step of directly contacting the carrier and the light emitting diode chip to establish electrical communication among the anode and cathode electrodes and the positive and negative electrodes; and a step of firmly bonding the carrier and the light emitting diode chip by which to simplify assembling procedure and further to reduce manufacturing cost and enhance production efficiency. | 2009-10-01 |
20090242917 | Light-emitting device including light-emitting diode - A light-emitting device includes a light-emitting diode, a red light-emitting phosphor layer, a yellow light-emitting phosphor layer, and a blue light-emitting phosphor layer. These layers are stacked in the stacking sequence of the yellow, blue, and red phosphor layers in order of increasing distance from the LED. The stacking sequence of the yellow and blue phosphor layers is first determined in such a manner that these layers do not interact with each other. The stacking sequence of the red and yellow phosphor layers and the stacking sequence of the red and blue phosphor layers are determined by the discriminant D. This determination of the stacking sequence suppresses a reduction in the conversion efficiency of the phosphors due to concentration quenching, improving the emission efficiency of the light-emitting device. | 2009-10-01 |
20090242918 | High Efficiency Group III Nitride LED with Lenticular Surface - A light emitting diode is disclosed that includes a conductive substrate, a bonding metal on the conductive substrate and a barrier metal layer on the bonding metal. A mirror layer is encapsulated by the barrier metal layer and is isolated from the bonding metal by the barrier layer. A p-type gallium nitride epitaxial layer is on the encapsulated mirror, an indium gallium nitride active layer is on the p-type layer, and an n-type gallium nitride layer is on the indium gallium nitride layer, and a bond pad is made to the n-type gallium nitride layer. | 2009-10-01 |
20090242919 | LIGHT EMITTING DEVICE - A light emitting device includes a leadframe, a light emitting unit, a transparent encapsulant, and a fluorescent colloid layer. The light emitting unit is disposed on the leadframe. The transparent encapsulant covers the light emitting unit, wherein the transparent encapsulant has a concave on which at least one reflective surface is disposed. The fluorescent colloid layer is disposed outside the transparent encapsulant, wherein a chamber is formed between the fluorescent colloid layer and the transparent encapsulant. The light generated by the light emitting unit is reflected by the reflective surface and guided to a side wall of the fluorescent colloid layer. | 2009-10-01 |
20090242920 | SIDE VIEW LED PACKAGE AND BACK LIGHT MODULE COMPRISING THE SAME - Disclosed is a side view LED package that can be more accurately mounted onto a surface of a substrate such as a printed circuit board without distortion includes a first portion of a body allowing light to be emitted in front thereof, the first portion having a horizontal plane formed on a top or bottom side thereof; and a second portion of the body positioned backward with respect to a back end boundary line of the first portion, the second portion being formed with an inclined plane that is adjacent to the horizontal plane and has height decreased from the back end boundary line, wherein the inclined plane is partially formed with an added thickness portion that is flush with the horizontal plane. | 2009-10-01 |
20090242921 | METHOD FOR COATING PHOSPHOR, APPARATUS TO PERFORM THE METHOD, AND LIGHT EMITTING DIODE COMPRISING PHOSPHOR COATING LAYER - A method of forming a phosphor coating layer on a light emitting diode (LED) chip using electrophoresis includes separating phosphor particles in a suspension according to a particle size, and coating the phosphor particles on a surface of the LED chip by sequentially depositing the separated phosphor particles on the surface of the LED chip according to the particle size. An apparatus to form a phosphor coating layer on an LED chip includes an electrophoresis bath to accommodate a suspension containing phosphor particles separated into layers according to a particle size, and electrodes disposed inside the electrophoresis bath. The electrodes may include a cathode electrode on which the LED chip may be arranged, and an anode electrode. | 2009-10-01 |
20090242922 | LIGHT-EMITTING DIODE LAMP - A light-emitting diode (LED) lamp includes a columnar body having a plurality of heat-radiating fins, an LED supporting end, and a mounting end; a first conducting plate disposed on the LED supporting end; an LED having a first electrode in electric contact with the first conducting plate; a second conducting plate in electric contact with a second electrode of the LED; a cap having a rear coupling end covered around the LED supporting end of the columnar body and a front end defining a central opening to enclose a light-emitting section of the LED therein; a first annular gasket disposed between the rear coupling end of the cap and the LED supporting end of the columnar body; and a second annular gasket disposed between the light-emitting section and the central opening of the cap. Therefore, the LED lamp is waterproof and easy to maintain, and allows good heat radiation. | 2009-10-01 |
20090242923 | Hermetically Sealed Device with Transparent Window and Method of Manufacturing Same - The invention is a hermetically sealed semiconductor die package wherein a surface of the die can be positioned very close to the hermetic package and a method of fabricating such a package. The invention is particularly suited to hermetically sealed circuit components, such as dies with a light emitting surface or light receiving surface for which it would be desirable to place the light emitting or light receiving surface as close as possible to a transparent window in the package so as to maximize the amount of light that can be transmitted out of the package. | 2009-10-01 |
20090242924 | LIGHT EMITTING DIODES WITH SMOOTH SURFACE FOR REFLECTIVE ELECTRODE - A light emitting diode comprising an epitaxial layer structure, a first electrode, and a second electrode. The first and second electrodes are separately disposed on the epitaxial layer structure, and the epitaxial layer structure has a root-means-square (RMS) roughness less than about 3 at a surface whereon the first electrode is formed. | 2009-10-01 |
20090242925 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF - The present invention provides a semiconductor light-emitting element comprising an electrode part excellent in ohmic contact and capable of emitting light from the whole surface. An electrode layer placed on the light-extraction side comprises a metal part and plural openings. The metal part is so continuous that any pair of point-positions in the part is continuously connected without breaks, and the metal part in 95% or more of the whole area continues linearly without breaks by the openings in a straight distance of not more than ⅓ of the wavelength of light emitted from an active layer. The average opening diameter is of 10 nm to ⅓ of the wavelength of emitted light. The electrode layer has a thickness of 10 nm to 200 nm, and is in good ohmic contact with a semiconductor layer. | 2009-10-01 |
20090242926 | PACKAGE FOR OPTICAL SEMICONDUCTOR ELEMENT - A package for an optical semiconductor element is provided. The package includes: a stem body having a sealing hole therein; and a lead pin having a glass sealing portion which is sealed with sealing glass in the sealing hole. Characteristic impedance of the glass sealing portion is adjusted to a given value. The characteristic impedance Zo is given by: Zo=(138/Er | 2009-10-01 |
20090242927 | SEMICONDUCTOR LIGHT EMITTING MODULE AND METHOD FOR MANUFACTURING THE SAME - A light emitting module includes a semiconductor light source, a first lead with a bonding pad to which the light source is attached, and a second lead spaced from the first lead in a first direction contained in the plane of the first die bonding pad. The second lead includes a wire bonding pad connected to the light source via a wire. The module also includes a case formed with a space elongated in the first direction for accommodating the light source. The first lead includes an extension extending from the first die bonding pad, and a mounting terminal connected to the extension. The extension extends in a second direction that is perpendicular to the first direction and contained in the plane of the first die bonding pad. The mounting terminal extends perpendicularly to the second direction. The extension overlaps the light source in the first direction. | 2009-10-01 |
20090242928 | RESIN SHEET FOR ENCAPSULATING OPTICAL SEMICONDUCTOR ELEMENT AND OPTICAL SEMICONDUCTOR DEVICE - The present invention provides a resin sheet for encapsulating an optical semiconductor element, the resin sheet containing an encapsulation resin layer, an adhesive resin layer, a metal layer and a protective resin layer, in which the encapsulation resin layer and the metal layer adhered onto the adhesive resin layer are disposed adjacently to each other, the protective resin layer is laminated on the encapsulation resin layer and the metal layer so as to cover both the encapsulation resin layer and the metal layer, and the encapsulation resin layer has a taper shape expanding toward the protective resin layer; and an optical semiconductor device containing an optical semiconductor element encapsulated by using the resin sheet. The optical semiconductor element encapsulation resin sheet of the invention can be suitably used for back lights of liquid crystal screens, traffic signals, large-sized outdoor displays, billboards and the like. | 2009-10-01 |
20090242929 | LIGHT EMITTING DIODES WITH PATTERNED CURRENT BLOCKING METAL CONTACT - A light emitting diode including an epitaxial layer structure, a first electrode formed on the epitaxial layer structure, and a second electrode formed on the epitaxial layer structure. The first electrode has a pattern and the second electrode has a portion aligned with the pattern of the first electrode. The portion of the second electrode forms a non-ohmic contact with the epitaxial layer structure. | 2009-10-01 |
20090242930 | SEMICONDUCTOR DEVICE - A lateral high-breakdown voltage semiconductor device is provided in which the breakdown voltages of elements as a whole are improved, while suppressing increases in cell area. A track-shape gate electrode surrounds a collector electrode extending in a straight line, a track-shape emitter electrode surrounds the gate electrode, and a track-shape first isolation trench surrounds the emitter electrode. A second isolation trench surrounds the first isolation trench. The region between the first isolation trench and the second isolation trench is an n-type isolation silicon region. The isolation silicon region is at the same potential as the emitter electrode. In the cross-sectional configuration traversing the gate electrode, the depth of the p base region in an interval corresponding to an arc-shape portion of the gate electrode is shallower than the depth of the p base region in an interval corresponding to a straight-line portion of the gate electrode. | 2009-10-01 |
20090242931 | Semiconductor device having IGBT and diode - A semiconductor device includes: a substrate; an active element cell area including IGBT cell region and a diode cell region; a first semiconductor region on a first side of the substrate in the active element cell area; a second semiconductor region on a second side of the substrate in the IGBT cell region; a third semiconductor region on the second side in the diode cell region; a fourth semiconductor region on the first side surrounding the active element cell area; a fifth semiconductor region on the first side surrounding the fourth semiconductor region; and a sixth semiconductor region on the second side below the fourth semiconductor region. The second semiconductor region, the third semiconductor region and the sixth semiconductor region are electrically coupled with each other. | 2009-10-01 |
20090242932 | Large-area pin diode with reduced capacitance - The invention provides a design of PIN diode having a low capacitance and a large area of effective collection of photo-generated charge. The low capacitance is obtained by replacing a continuous collector layer in the diode by a sparse array of collector disks interconnected by narrow metallic runners at a different structural level separated from the collector discs by an interlevel dielectric. | 2009-10-01 |
20090242933 | Semiconductor Photodiode And Method Of Manufacture Thereof - A method of manufacture of an avalanche photodiode involving a step of making a recess in a top window layer of an avalanche photodiode layer stack, such that a wall surrounding the recess runs smoothly and gradually from the level of the recess to the level of the window layer. Further, diffusing a dopant over the entire window layer area so as to form a p-n junction at the bottom of the recess, and providing a first electrical isolation region around the recess by buried ion implantation or wet oxidation in order to limit the flow of electrical current to the p-n junction. Forming an isolation trench around the photodiode and a second electrical isolation region by ion implantation into the trench such that the second electrical isolation region runs through the absorption layer of the photodiode. | 2009-10-01 |
20090242934 | Photodiode And Method Of Fabrication - The present invention provides a highly reliable photodiode, as well as a simple method of fabricating such a photodiode. During fabrication of the photodiode, a grading layer is epitaxially grown on a top surface of an absorption layer, and a blocking layer, for inhibiting current flow, is epitaxially grown on a top surface of the grading layer. The blocking layer is then etched to expose a window region of the top surface of the grading layer. Thus, the etched blocking layer defines an active region of the absorption layer. A window layer is epitaxially regrown on a top surface of the blocking layer and on the window region of the top surface of the grading layer, and is then etched to form a window mesa. | 2009-10-01 |