38th week of 2013 patent applcation highlights part 16 |
Patent application number | Title | Published |
20130240785 | HALO-BORATE LUMINESCENT MATERIALS AND PREPARATION METHODS THEREOF - Halo-borate luminescent materials and preparation methods thereof are provided. The said luminescent materials are represented by the following general formula: Ca | 2013-09-19 |
20130240786 | CERAMIC NON-CUBIC FLUORIDE MATERIAL FOR LASERS - The invention relates to a ceramic non-cubic fluoride laser material and methods of its manufacture. | 2013-09-19 |
20130240787 | SEMICONDUCTOR NANOCRYSTALS - A method of making a nanocrystal includes slowly infusing a M-containing compound and a X donor into a mixture including a nanocrystal core, thereby forming an overcoating including M and X on the core. | 2013-09-19 |
20130240788 | Highly Luminescent Color-Selective Nanocrystalline Materials - A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%. | 2013-09-19 |
20130240789 | REACTOR CONTROL METHOD - A method is provided for controlling the operating temperature of a catalytic reactor using a closed-loop system that provides for varying the reactor input and other operating parameters in order to maintain the operating temperature of the reactor at or near the initial setpoint temperature for operation of the reactor. In one example, maximum and minimum operating temperatures with a catalytic partial oxidation reactor are controlled, as well as maintaining control over the corresponding minimum required ratio of oxygen atoms to carbon atoms, such that the operating temperature within the reactor is maintained below the material limits but above threshold temperatures for coking. | 2013-09-19 |
20130240790 | TWO STAGE ENTRAINED GASIFICATION SYSTEM AND PROCESS - The present invention relates to a system and process for gasifying feedstock such as carbonaceous materials. The invention includes partial combustion of dry solids and pyrolysis of carbonaceous material slurry in two separate reactor sections and produce mixture products comprising synthesis gas. The invention employs one or more catalytic or sorbent bed for removing tar from the synthesis gas. The inventive system and process allow a gasification to be carried out under higher slurry feeding rate and lower temperature with the provision to manage the tar being produced, therefore to increase the conversion efficiency of the overall gasification. | 2013-09-19 |
20130240791 | COMPOSITION, METHOD OF APPLICATION AND USE OF A NATURAL ADDITIVE FROM SOAPBARK TREE EXTRACTS TO IMPROVE THE QUALITY OF MEAT PRODUCTS - A method for making an antioxidant composition that is useful for the preservation of foodstuffs. The antioxidant composition contains soapbark tree polyphenols, and is obtained as a permeate from an extract of | 2013-09-19 |
20130240792 | SEMICONDUCTOR COMPOSITION FOR HIGH PERFORMANCE ORGANIC DEVICES - A copolymer having a structure represented by: | 2013-09-19 |
20130240793 | SURFACE PROTECTIVE FILM, TRANSFER MEMBER, IMAGE FORMING APPARATUS, AND METHOD FOR FORMING IMAGE - A surface protective film includes a self-healing urethane resin and a conductive powder. In the surface protective film, the content of the conductive powder is about 5 vol % or more and about 25 vol % or less relative to the volume of the urethane resin. | 2013-09-19 |
20130240794 | BORON-COMPRISING INKS FOR FORMING BORON-DOPED REGIONS IN SEMICONDUCTOR SUBSTRATES USING NON-CONTACT PRINTING PROCESSES AND METHODS FOR FABRICATING SUCH BORON-COMPRISING INKS - A method for fabricating a boron-comprising ink is provided. The method includes providing an inorganic boron-comprising material, combining the inorganic boron-comprising material with a polar solvent having a boiling point in a range of from about 50° C. to about 250° C., and combining the inorganic boron-comprising material with a spread-minimizing additive that results in a spreading factor of the boron-comprising ink in a range of from about 1.5 to about 6. | 2013-09-19 |
20130240795 | ARYLSULFONIC ACID COMPOUND AND USE THEREOF AS ELECTRON-ACCEPTOR MATERIAL - Disclosed is an arylsulfonic acid compound characterized by being represented by formula (1). By using this compound as an electron-acceptor material, highly uniform film formability can be achieved. By using a thin film containing the arylsulfonic acid compound in an OLED device or a PLED device, there can be obtained excellent EL device characteristics such as low driving voltage, high luminous efficiency and long life. | 2013-09-19 |
20130240796 | MATERIALS FOR ORGANIC ELECTROLUMINESCENT DEVICES - The present invention relates to compounds of the formula (1) and formula (2) which are suitable for use in electronic devices, in particular in organic electroluminescent devices. | 2013-09-19 |
20130240797 | COMPOUND SEMICONDUCTOR - A compound semiconductor contains main constituent elements all of which satisfy the relationship (Cu | 2013-09-19 |
20130240798 | METHOD OF MANUFACTURE OF HOMODISPERSED SILICON CARBIDE-DERIVED CARBON COMPOSITES - The present invention concerns a method of manufacture of the homodispersed composite of the synthetic carbon material derived from carbide and silicon where the powder of the carbon material is first dispersed mechanically with the powder of silicon to homodispersed mixture, then the homodispersed mixture of the carbon material and silicon is sintered in an inert environment at a temperature between 1200 to 1500° C. to synthetic homodispersed composite of the silicon carbide and silicon. The homodispersed composite of the silicon carbide and silicon is heated in an inert environment at a temperature between 800 to 1100° C. and then the homodispersed composite of the silicon carbide and silicon is chlorinated at a temperature from 800 to 100° C. | 2013-09-19 |
20130240799 | POLYAMIDE COMPOSITION CONTAINING ELECTRICALLY CONDUCTIVE CARBON - A polyamide composition which provides moldings having a significantly reduced percolation threshold and an improved electrical conductivity is provided. The composition contains a) at least 40 parts by weight of a polyamide; b) from 0.15 to 25 parts by weight of an electrically conductive carbon; c) from 0.3 to 8 parts by weight of an oligofunctional compound; and, optionally, d) conventional auxiliaries and additives, wherein the electrically conductive carbon comprises at least one of carbon nanotubes and graphene, the oligofunctional compound comprises at least one functional group reactive with reactive groups on a surface of the electrically conductive carbon and at least one functional group reactive with an end group of the polyamide, and the sum of the parts by weight of the components a) to d) is 100. | 2013-09-19 |
20130240800 | SI ALLOY-CONTAINING NEGATIVE ELECTRODE ACTIVE MATERIAL FOR ELECTRICAL DEVICES - Disclosed is a negative electrode active material for electrical devices, comprising an alloy having a composition represented by the formula: Si | 2013-09-19 |
20130240801 | REDUCED OXIDES HAVING LARGE THERMOELECTRIC ZT VALUES - Doped and partially-reduced oxide (e.g., SrTiO | 2013-09-19 |
20130240802 | OXIDE FOR SEMICONDUCTOR LAYER OF THIN-FILM TRANSISTOR, SPUTTERING TARGET, AND THIN-FILM TRANSISTOR - This oxide for a semiconductor layer of a thin-film transistor contains Zn, Sn and In, and at least one type of element (X group element) selected from an X group comprising Si, Hf, Ga, Al, Ni, Ge, Ta, W and Nb. The present invention enables a thin-film transistor oxide that achieves high mobility and has excellent stress resistance (negligible threshold voltage shift before and after applying stress) to be provided. | 2013-09-19 |
20130240803 | METHODS FOR IMPROVING PERFORMANCE OF HOLOGRAPHIC GLASSES - The improvement of the performance of holographic glasses with recorded holograms as measured by a figure of merit of the holographic glasses is disclosed. The improvement in the figure of merit of the holographic glasses is obtained at least in part with the addition of arsenic in the formation of the holographic glasses. The presence of arsenic increases the figure of merit as measured at a wavelength of interest of a holographic glass with a recorded hologram as compared to a holographic glass with a recorded hologram that does not contain arsenic. | 2013-09-19 |
20130240804 | SILICONE MATERIAL HAVING A PHOTOCHROMIC ADDITIVE - A silicone-based material that incorporates a photochromic molecule, and methods of making the same. The material changes color when exposed to ultraviolet radiation, thereby providing a convenient indicator of exposure. The material reverts to its original color after the source of ultraviolet radiation is removed. Compositions and articles that comprise a silicone-based material that incorporates a photochromic dye. | 2013-09-19 |
20130240805 | Uranium Dioxide Nuclear Fuel Containing Mn and Al as Additives and Method of Fabricating the Same | 2013-09-19 |
20130240806 | HYDRAULIC SPIKE PULLER - A pulling tool includes a housing and a tube disposed within the housing, the tube configured to supply hydraulic fluid. The spike puller further includes a piston rod connected to a piston. The piston rod has a hollow axial bore, and the piston and the piston rod are axially moveable relative to the tube. The spike puller has a passage communicating fluid from the tube to the piston. The passage is contained within the housing. The passage is variable between a first configuration in which hydraulic fluid flows at a first restricted flow so as to provide a slower retraction of the piston rod and a second configuration in which hydraulic fluid flows at a second less restricted flow so as to provide a faster retraction of the piston rod. | 2013-09-19 |
20130240807 | Portable Cable Puller - A portable apparatus for pulling a cable through a conduit includes a frame that has a base and caster wheels. The apparatus further includes a boom that has at least one roller configured to guide a rope connected to the cable along the boom. The boom also includes a main boom pivotally connected to the base and an upper boom pivotally connected to the main boom. A drive unit connects to the boom and includes a rotatable spool configured to pull the rope along the boom. The apparatus further includes a lift pivotally connected to the frame and the boom. The lift is operable to move the boom relative to the frame. | 2013-09-19 |
20130240808 | TWO SPEED DIRECT DRIVE DRAWWORKS - A direct drive drawworks ( | 2013-09-19 |
20130240809 | CABLE WINCH DEVICE - The present invention relates to a cable winch device, particularly to a cable winch device for a crane, having at least one cable winch, with at least one cable, wherein the cable is wound and/or can be wound and/or unwound at least partially on the cable winch, and with at least one shifting means by means of which the cable winch can be shifted and/or moved at least partially substantially along the longitudinal axis of the cable winch. The invention further relates to a crane, particularly to a deep sea crane, having at least one cable winch device. | 2013-09-19 |
20130240810 | WINCH - A winch wherein a rope or cable is self-feeding onto a sheave by a spring that is biased so as to push a rope into contact with a grooved outer surface of the sheave. One end of the spring is pivotally supported on a frame that supports the sheave for rotation about its central axis, while the opposite end of the spring is freely flexible. A supporting block is provided for the free end of the spring to support and minimize or prevent damage to the spring. The block has an angled surface for urging the rope away from the sheave, thus, together with a stripper member, assisting removal of the rope from the sheave at a point at which the rope exits the sheave. | 2013-09-19 |
20130240811 | ROPE GRIP APPARATUS - Rope grip apparatus for raising or lowering a load has a rope-engaging portion with opposing projections. The opposing projections are arranged to grip a rope by compressing the rope between the projections. In use the rope is fed through the apparatus. | 2013-09-19 |
20130240812 | ELECTRONICALLY CONTROLLED WHEEL LIFT SYSTEM - A wheel lift system capable of performing an electronically synchronized lift using two or more individual lifts. In one embodiment, the wheel lift system is pneumatically powered via an external source of compressed air, and the system is electronically controlled from a common control station/module. The common control station/module can include a moveable cart and/or a wireless handheld control module. In one embodiment, each lift of the wheel lift system is connected to a common movable cart and a user control interface is also connected, either physically or wirelessly, to the movable cart. | 2013-09-19 |
20130240813 | U-SECTION FOR MOUNTING A RAILING PANEL IN A FIXED MANNER - A glass panel railing with a U-section comprises a first limb, a second limb, a first base part, a second base part, a first hook receptacle and a second hook receptacle. Between the two limbs, the foot region of the glass panel is held in a fixed manner. The U-section is composed of a two-part design; the first limb and second limb. The first limb can be fastened to the building while the second limb can be attached to the first limb so as to provide stability. | 2013-09-19 |
20130240814 | PANEL RAILING - A panel railing has a dimensionally stable U-shaped profile. Between the two limbs of the U-shaped profile, the base region of a glass pane is held in a clamped manner. A spacer body and a rod body are arranged in the opening region of the U-shaped profile between the glass pane and one limb. The rod body is provided in an upper, free edge region of at least one of the two limbs. The rod body is placed in a pressing manner with its one outer face against the limb and with its other outer face, which lies opposite the former, against the glass pane. On the inner side of the limb, there is at least one projection which protrudes from said limb in the direction of the glass pane and is present below the maximum width extent of the rod body. | 2013-09-19 |
20130240815 | Corner Assembly for a Foldable Child Enclosure - A corner assembly for a foldable child enclosure includes: a corner cover attached to a side post of the foldable child enclosure; a first rail cover mating with a first opening in the corner cover and attached to a first upper arm of the foldable child enclosure; and a second rail cover mating with a second opening in the corner cover and attached to a second upper arm of the foldable child enclosure. The first rail cover and the second rail cover move relative to the corner cover as the foldable child enclosure is moved from a folded position to an open position. | 2013-09-19 |
20130240816 | Edge Protection System Using Cantilevered Counterweight - An edge protection system including spaced counterweights each having a connecting bracket on one side thereof. Cantilever arms each have vertical legs on opposite ends, with one leg pivotally secured to the counterweights and the other leg secured to hubs. The vertical legs may selectively support the cantilever arm at a height sufficient to allow workers to walk upright beneath the arm. Wedges connect ledger ends to connecting wheels on hub vertical posts, and secure a stiffener to the wheel and ledger sections. Counterweights have a U-shaped bracket and a plurality of weight blocks. The blocks are selectively stacked on the bracket with one upright leg extending through weight block center openings and the other upright leg in side slots of the blocks. A trolley has a carrying connector for connecting to a connector of the one upright leg on top of the counterweight for transporting the counterweight. | 2013-09-19 |
20130240817 | Guardrail System - A guardrail support comprising a base having a first side with attachment holes suitable for attachment to a surface beneath the base using one or more fasteners at a penetrating angle, and a second side one or more attachment holes suitable for attachment to the surface beneath the base using one or more fasteners at a penetrating angle, a post extending vertically from the base, a support member extending at an angle from the first side of the base to the post, where an upper portion of the post is positioned at a distance of between 48 inches and 60 inches from the base, and wherein when the base of the guardrail support is attached to the surface beneath the base, the guardrail support will withstand a 200 pound outward or downward force applied to the upper portion of the post. | 2013-09-19 |
20130240818 | MEMORY COMPONENT, MEMORY DEVICE, AND METHOD OF OPERATING MEMORY DEVICE - A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide. | 2013-09-19 |
20130240819 | Memory Devices and Formation Methods - A method includes forming an electrical insulator material over an integrated circuit having a metal-containing conductive interconnect and activating a dopant in a semiconductor material of a substrate to provide a doped region. The doped region provides a junction of opposite conductivity types. After activating the dopant, the substrate is bonded to the insulator material and at least some of the substrate is removed where bonded to the insulator material. After the removing, a memory cell is formed having a word line, an access diode, a state-changeable memory element containing chalcogenide phase change material, and a bit line all electrically connected in series, the access diode containing the junction as a p-n junction. A memory device includes an adhesion material over the insulator material and bonding the word line to the insulator material. | 2013-09-19 |
20130240820 | PHASE CHANGE RANDOM ACCESS MEMORY AND FABRICATION METHOD OF HEATING ELECTRODE FOR THE SAME - A method for fabricating a PCRAM includes forming a switching element on a semiconductor substrate, forming an interlayer dielectric layer of a multilayer-structure by sequentially stacking a plurality of material layers having different etching properties on the semiconductor substrate having the switching element formed thereon, and by patterning the plurality of material layers to have different lengths or different side shapes, forming a heating electrode on sidewalls of the interlayer dielectric layer and an upper surface of the switching element, and forming a phase change material layer to fill a space inside of the heating electrode. | 2013-09-19 |
20130240821 | THREE DIMENSIONAL RRAM DEVICE, AND METHODS OF MAKING SAME - Disclosed herein are various embodiments of novel three dimensional RRAM devices, and various methods of making such devices. In one example, a device disclosed herein includes a first electrode for a first bit line comprising a variable resistance material, a second electrode for a second bit line comprising a variable resistance material and a third electrode positioned between the variable resistance material of the first bit line and the variable resistance material of the second bit line. | 2013-09-19 |
20130240822 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A nonvolatile memory device includes a first film layer formed on a substrate, and a second film layer formed on the first film layer. The second film layer comprises a first oxide material having a first oxygen content, and a second oxide material disposed laterally of the first oxide material and having a second oxygen content that is greater than the first oxygen content. The memory device also includes a third film layer formed on the second film layer, and the third film layer is disposed on the first oxide material and exposes portions of the second oxide material. | 2013-09-19 |
20130240823 | NON-VOLATILE MEMORY INCLUDING MULTILAYER MEMORY CELLS AND METHOD OF FABRICATING THE SAME - A non-volatile memory and a method of fabricating the same, more particularly, a non-volatile memory in which memory cells each includes an anti-fuse and a diode or a variable resistor and a diode are stacked in a multilayer laminate structure without increasing a horizontal area, to effectively utilize a vertical space and thereby significantly increase a degree of integration so that the memory cells are able to be highly integrated and perform high-speed operation, and a method of fabricating the non-volatile memory. | 2013-09-19 |
20130240824 | RESISTIVE MEMORY DEVICE AND FABRICATION METHOD THEREOF - A resistive memory device capable of implementing a multi-level cell (MLC) and a fabrication method thereof are provided. The resistive memory device includes a lower electrode connected to a switching device and including a first node and a second node formed on a top thereof to be spaced at a fixed interval, a phase-change material pattern formed on the first node and the second node, an upper electrode formed on the phase-change material pattern, a conductive material layer formed on a top and outer sidewall of the upper electrode, a first contact plug formed on one edge of the upper electrode to be connected to the upper electrode and the conductive material layer, and a second contact plug formed on the other edge of the upper electrode to be connected to the upper electrode and the conductive material layer. | 2013-09-19 |
20130240825 | NONVOLATILE VARIABLE RESISTANCE ELEMENT AND METHOD OF MANUFACTURING THE NONVOLATILE VARIABLE RESISTANCE ELEMENT - According to one embodiment, a first electrode, a second electrode, and a variable resistance layer are provided. The variable resistance layer is arranged between the first electrode and the second electrode and contains a polycrystalline semiconductor as a main component. | 2013-09-19 |
20130240826 | Resistive Memory Cells and Devices Having Asymmetrical Contacts - A memory cell includes a plug-type first electrode in a substrate, a magneto-resistive memory element disposed on the first electrode, and a second electrode disposed on the magneto-resistive memory element opposite the first electrode. The second electrode has an area of overlap with the magneto-resistive memory element that is greater than an area of overlap of the first electrode and the magneto-resistive memory element. The first surface may, for example, be substantially circular and have a diameter less than a minimum planar dimension (e.g., width) of the second surface. The magneto-resistive memory element may include a colossal magneto-resistive material, such as an insulating material with a perovskite phase and/or a transition metal oxide. | 2013-09-19 |
20130240827 | Integrated Circuitry, Switches, and Methods of Selecting Memory Cells of a Memory Device - Some embodiments include switches that have a graphene structure connected to a pair of spaced-apart electrodes. The switches may further include first and second electrically conductive structures on opposing sides of the graphene structure from one another. The first structure may extend from one of the electrodes, and the second structure may extend from the other of the electrodes. Some embodiments include the above-described switches utilized as select devices in memory devices. Some embodiments include methods of selecting memory cells. | 2013-09-19 |
20130240828 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device according to embodiments includes a semiconductor substrate, a buried insulating layer which is formed on the semiconductor substrate, a semiconductor layer which is formed on the buried insulating layer and includes a narrow portion and two wide portions which are larger than the narrow portion in width and are respectively connected to one end and the other end of the narrow portion, a gate insulating film which is formed on a side surface of the narrow portion, and a gate electrode formed on the gate insulating film. The impurity concentration of the semiconductor substrate directly below the narrow portion is higher than the impurity concentration of the narrow portion, and the impurity concentration of the semiconductor substrate directly below the narrow portion is higher than the impurity concentration of the semiconductor substrate directly below the wide portion. | 2013-09-19 |
20130240829 | QUANTUM DOT STRUCTURE, METHOD FOR FORMING QUANTUM DOT STRUCTURE, WAVELENGTH CONVERSION ELEMENT, LIGHT-LIGHT CONVERSION DEVICE, AND PHOTOELECTRIC CONVERSION DEVICE - This quantum dot structure has a matrix layer and a plurality of crystalline quantum dots provided spaced within the matrix layer. The quantum dots are provided at positions that differ in the direction of thickness of the matrix layer. | 2013-09-19 |
20130240830 | DIRECT AND SEQUENTIAL FORMATION OF MONOLAYERS OF BORON NITRIDE AND GRAPHENE ON SUBSTRATES - The invention generally related to a method for preparing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate. The layer of graphene may be formed in direct contact with the surface of the substrate, or an intervening layer of a material may be formed between the substrate surface and the graphene layer. | 2013-09-19 |
20130240831 | GROWING AN IMPROVED P-GAN LAYER OF AN LED THROUGH PRESSURE RAMPING - The present disclosure involves an apparatus. The apparatus includes a photonic die structure that includes a light-emitting diode (LED) die. The LED die is a vertical LED die in some embodiments. The LED die includes a substrate. A p-doped III-V compound layer and an n-doped III-V compound layer are each disposed over the substrate. A multiple quantum well (MQW) layer is disposed between the p-doped III-V compound layer and the n-doped III-V compound layer. The p-doped III-V compound layer includes a first region having a non-exponential doping concentration characteristic and a second region having an exponential doping concentration characteristic. In some embodiments, the second region is formed using a lower pressure than the first region. | 2013-09-19 |
20130240832 | INTEGRATION OF LED DRIVER CIRCUIT WITH LED - Various embodiments provide materials and methods for integrating exemplary heterostructure field-effect transistor (HFET) driver circuit or thyristor driver circuit with LED structures to reduce or eliminate resistance and/or inductance associated with their conventional connections. | 2013-09-19 |
20130240833 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed are a semiconductor light emitting device and a method for manufacturing the same. The semiconductor light emitting device comprises a substrate under a light emitting structure having an active layer. A bottom surface of the substrate includes a first portion and a second portion around the first portion, the first portion includes a first recess and the second portion includes a second recess, and the first recess and the second recess are formed in a direction toward the upper surface from the bottom surface of the substrate. The first recess and the second recess have a different depth from the bottom surface of the substrate, the first recess is formed along a transverse direction and a longitudinal direction in the bottom surface of the substrate, and the first recess and the second recess has a depth smaller than a thickness of the substrate. | 2013-09-19 |
20130240834 | METHOD FOR FABRICATING VERTICAL LIGHT EMITTING DIODE (VLED) DICE WITH WAVELENGTH CONVERSION LAYERS - A method for fabricating vertical light emitting diode (VLED) dice includes the steps of: forming a light emitting diode (LED) die having a multiple quantum well (MQW) layer configured to emit electromagnetic radiation in a first spectral region; forming a confinement layer on the multiple quantum well (MQW) layer; forming an adhesive layer on the confinement layer; and forming a wavelength conversion layer on the adhesive layer configured to convert the electromagnetic radiation in the first spectral region to output electromagnetic radiation in a second spectral region. | 2013-09-19 |
20130240835 | SEMICONDUCTOR DEVICE AND RECEIVER - A semiconductor device includes a p-type semiconductor layer, an n-type semiconductor layer, a pn junction portion at which the p-type semiconductor layer and the n-type semiconductor layer are joined to each other, and a multiple quantum barrier structure or a multiple quantum well structure that is provided in at least one of the p-type semiconductor layer and the n-type semiconductor layer and functions as a barrier against at least one of electrons and holes upon biasing in a forward direction. Upon biasing in a reverse direction, a portion that allows band-to-band tunneling of electrons is formed at the pn junction portion. | 2013-09-19 |
20130240836 | FinFET Having Superlattice Stressor - A fin field effect transistor (FinFET) device is provided. The FinFET includes a superlattice layer and a strained layer. The superlattice layer is supported by a substrate. The strained layer is disposed on the superlattice layer and provides a gate channel. The gate channel is stressed by the superlattice layer. In an embodiment, the superlattice layer is formed by stacking different silicon germanium alloys or stacking other III-V semiconductor materials. | 2013-09-19 |
20130240837 | ROOM TEMPERATURE NANOWIRE IR, VISIBLE AND UV PHOTODETECTORS - Room temperature IR and UV photodetectors are provided by electrochemical self-assembly of nanowires. The detectivity of such IR detectors is up to ten times better than the state of the art. Broad peaks are observed in the room temperature absorption spectra of 10-nm diameter nanowires of CdSe and ZnS at photon energies close to the bandgap energy, indicating that the detectors are frequency selective and preferably detect light of specific frequencies. Provided is a photodetector comprising: an aluminum substrate; a layer of insulator disposed on the aluminum substrate and comprising an array of columnar pores; a plurality of semiconductor nanowires disposed within the pores and standing vertically relative to the aluminum substrate; a layer of nickel disposed in operable communication with one or more of the semiconductor nanowires; and wire leads in operable communication with the aluminum substrate and the layer of nickel for connection with an electrical circuit. | 2013-09-19 |
20130240838 | INCREASING CARRIER INJECTION VELOCITY FOR INTEGRATED CIRCUIT DEVICES - Embodiments of the present disclosure describe structures and techniques to increase carrier injection velocity for integrated circuit devices. An integrated circuit device includes a semiconductor substrate, a first barrier film coupled with the semiconductor substrate, a quantum well channel coupled to the first barrier film, the quantum well channel comprising a first material having a first bandgap energy, and a source structure coupled to launch mobile charge carriers into the quantum well channel, the source structure comprising a second material having a second bandgap energy, wherein the second bandgap energy is greater than the first bandgap energy. Other embodiments may be described and/or claimed. | 2013-09-19 |
20130240839 | Graphene Channel-Based Devices and Methods for Fabrication Thereof - Graphene-channel based devices and techniques for the fabrication thereof are provided. In one aspect, a semiconductor device includes a first wafer having at least one graphene channel formed on a first substrate, a first oxide layer surrounding the graphene channel and source and drain contacts to the graphene channel that extend through the first oxide layer; and a second wafer having a CMOS device layer formed in a second substrate, a second oxide layer surrounding the CMOS device layer and a plurality of contacts to the CMOS device layer that extend through the second oxide layer, the wafers being bonded together by way of an oxide-to-oxide bond between the oxide layers. One or more of the contacts to the CMOS device layer are in contact with the source and drain contacts. One or more other of the contacts to the CMOS device layer are gate contacts for the graphene channel. | 2013-09-19 |
20130240840 | METAL OXIDE CHARGE TRANSPORT MATERIAL DOPED WITH ORGANIC MOLECULES - Doping metal oxide charge transport material with an organic molecule lowers electrical resistance while maintaining transparency and thus is optimal for use as charge transport materials in various organic optoelectronic devices such as organic photovoltaic devices and organic light emitting devices. | 2013-09-19 |
20130240841 | METHOD TO INCREASE FIELD EFFECT MOBILITY OF DONOR-ACCEPTOR SEMICONDUCTORS - A method including activating an electronic device, such as an organic thin film transistor, by exposing the device to non-ionizing radiation while the device is under an electrical field. Activation of the transistor increases the field effect mobility of the transistor. | 2013-09-19 |
20130240842 | ACTIVE MATRIX DILUTE SOURCE ENABLED VERTICAL ORGANIC LIGHT EMITTING TRANSISTOR - Various embodiments are provided for dilute source enabled vertical organic light emitting transistors. In various embodiments, a display panel includes an array of pixels. In one embodiment, among others, at least one pixel includes a switching transistor and a driving transistor coupled to the switching transistor, where the driving transistor is configured to emit light responsive to activation by the switching transistor. The driving transistor may be a dilute source enabled vertical organic light emitting transistor (DS-VOLET). The switching transistor may include a dilute source enabled vertical-field effect transistor (DS-VFET). In another embodiment, a double dilute source enabled vertical-field effect transistor (DS-VFET) includes a first DS-VFET coupled to a second DS-VFET. | 2013-09-19 |
20130240843 | POLYMER AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A polymer and an organic light-emitting device including the polymer represented by Formula 1 | 2013-09-19 |
20130240844 | ORGANIC ELECTROLUMINESCENCE ELEMENT, PRODUCTION METHOD THEREOF, ORGANIC EL DISPLAY DEVICE, ORGANIC EL LIGHTING, AND APPARATUS FOR PRODUCING ORGANIC ELECTROLUMINESCENCE ELEMENT - The present invention relates to a method for producing an organic electroluminescence element, comprising an organic layer between an anode and a cathode of the organic electroluminescence element by a wet film-forming method by using a composition containing an organic electroluminescence element material and a solvent in any one environment of the following film formation environments 1 to 3, and drying the formed film: film formation environment 1: a carbon dioxide concentration of 0.7 g/m | 2013-09-19 |
20130240845 | ENHANCING PERFORMANCE CHARACTERISTICS OF ORGANIC SEMICONDUCTING FILMS BY IMPROVED SOLUTION PROCESSING - Improved processing methods for enhanced properties of conjugated polymer films are disclosed, as well as the enhanced conjugated polymer films produced thereby. Addition of low molecular weight alkyl-containing molecules to solutions used to form conjugated polymer films leads to improved photoconductivity and improvements in other electronic properties. The enhanced conjugated polymer films can be used in a variety of electronic devices, such as solar cells and photodiodes. | 2013-09-19 |
20130240846 | TFT, DISPLAY APPARATUS INCLUDING TFT, AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS INCLUDING TFT - A thin film transistor includes a gate electrode having a first length measured in a first direction and a first width measured in a second direction, an active layer having a second length measured in the first direction and a second width measured in the second direction, the second length of the active layer being greater than the first length of the gate electrode, and the second width of the active layer being greater than the first width of the gate electrode, and a source electrode and a drain electrode that are connected to the active layer, wherein at least one of opposite side edges of the gate electrode extending in the first direction is spaced apart from a corresponding opposite side edge of the active layer extending in the first direction. | 2013-09-19 |
20130240847 | MONOLITHIC PARALLEL MULTIJUNCTION OLED WITH INDEPENDENT TUNABLE COLOR EMISSION - A tandem organic light emitting diode (OLED) device comprised of multiple stacked single OLEDs electrically connected in parallel via transparent interlayer is recited herein. Transparent interlayers are coated by charge injection layers in order to enhance the charge injection efficiency and decrease the operation voltage. Transparent nanomaterials, such as carbon nanotube sheets (or graphene, graphene ribbons and similar conductive transparent nano-carbon forms) are used as Interlayers or outer electrodes. Furthermore, functionalization of carbon nanotubes inter layers by n-doping (or p-doping) converts them into common cathode (or common anode), further decreasing operation voltage of tandem. The development of these alternative interconnecting layers comprised of nanomaterials simplifies the process and may be combined with traditional OLED devices. In addition, novel architectures are enabled that allow the parallel connection of the stacked OLEDs into monolithic multi-junction OLED tandems. | 2013-09-19 |
20130240848 | OLED PACKAGE AND PACKAGING METHOD THEREOF - There is provided an OLED package including a substrate, a lighting component, a compound barrier layer, a moisture absorption zone and an inorganic barrier layer. The lighting component is formed on the substrate. The compound barrier layer completely seals the lighting component configured to block moisture and oxygen. The moisture absorption zone is formed on the substrate surrounding the compound barrier layer and is not formed upon the lighting component. The inorganic barrier layer completely seals the compound barrier layer and the moisture absorption zone configured to block moisture and oxygen. | 2013-09-19 |
20130240849 | ORGANIC ELECTROLUMINESCENT APPARATUS - An organic electroluminescent apparatus is provided. A first electrode layer is disposed above a substrate. A first color luminescent layer is disposed above the first electrode layer. A second color luminescent layer is disposed above the first color luminescent layer. A third color luminescent layer is disposed on the second color luminescent layer. A first color light emitted from the first color luminescent layer, a second color light emitted from the second color luminescent layer and a third color light emitted from the third color luminescent layer are mixed to form a white light. A first fluorescent layer is disposed on the substrate. The first fluorescent layer is excited by the first color light so as to emit the second color light, the third color light or a fourth color light. | 2013-09-19 |
20130240850 | ULTRA-HIGH EFFICIENCY (125%) PHOSPHORESCENT ORGANIC LIGHT EMITTING DIODES USING SINGLET FISSION - An organic light emitting device (OLED) is provided. The OLED includes, an anode; a cathode; and an emissive layer disposed between the anode and the cathode. The emissive layer includes a singlet fission sensitizer and a triplet emitter. The singlet energy of the singlet fission sensitizer is equal to or greater than twice the triplet energy of the singlet fission sensitizer. The triplet energy of the triplet emitter is less than the triplet energy of the singlet fission sensitizer. | 2013-09-19 |
20130240851 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE - A light-emitting element having high external quantum efficiency is provided. A light-emitting element having a long lifetime is provided. A light-emitting element includes a light-emitting layer between a pair of electrodes. The light-emitting layer contains at least a phosphorescent compound, a first organic compound (host material) having an electron-transport property, and a second organic compound (assist material) having a hole-transport property. The light-emitting layer has a stacked-layer structure including a first light-emitting layer and a second light-emitting layer, and the first light-emitting layer contains a higher proportion of the second organic compound than the second light-emitting layer. In the light-emitting layer (the first light-emitting layer and the second light-emitting layer), a combination of the first organic compound and the second organic compound forms an exciplex. | 2013-09-19 |
20130240852 | Light-Emitting Device and Manufacturing Method Thereof - Provided is a light-emitting device in which a voltage drop is suppressed and light extraction efficiency is increased. Provided is a light-emitting device with increased productivity. Provided is a light-emitting device with high reliability. An extremely thin conductive film from 3 nm to 50 nm is used as an electrode on a light-emitting side and an auxiliary wiring is provided in contact with the electrode. When the width of the auxiliary wiring is 100 μm or less, the auxiliary wiring is hardly perceived with the naked eye, so that a light-emitting device in which light extraction efficiency is increased and luminance is obtained uniformly. The extremely thin auxiliary wiring can be formed by nanoimprinting technology. With use of nanoimprinting technology, the width of the auxiliary wiring can be reduced to 10 nm or less. | 2013-09-19 |
20130240853 | Plasma-Chlorinated Electrode and Organic Electronic Devices Using the Same - A method is disclosed for elevating the work function of conductive layers such as indium tin oxide by chlorine-containing plasma exposure or etching. Also disclosed are electronic devices such as organic light-emitting diodes and organic photovoltaic cells with a chlorine plasma-treated conductive layer as the hole-injecting or hole-accepting electrode. The performance of the devices is enhanced due to an increased work function of the plasma-treated electrode. | 2013-09-19 |
20130240854 | ORGANIC EL ELEMENT, DISPLAY PANEL, AND DISPLAY DEVICE - An organic EL element comprises: a transparent electrode; a reflective electrode opposite the transparent electrode; and a light-emitting layer having a film thickness of 20 nm to 200 nm, between the electrodes. The reflective electrode is a layered film of: a metal film including Al as a main component and having a film thickness of at least 43 nm; and a Ni film, whose film thickness d satisfies: 0 nm2013-09-19 | |
20130240855 | Method for Manufacturing Light-Emitting Device - A method for exposing an electrode terminal covered with an organic film in a light-emitting device without damaging the electrode terminal is provided. In a region of the electrode terminal to which electric power from an external power supply or an external signal is input, an island-shaped organic compound-containing layer is formed and the organic film is formed thereover. The organic film is removed by utilizing low adhesion of an interface between the organic compound-containing layer and the electrode terminal, whereby the electrode terminal can be exposed without damage to the electrode terminal. | 2013-09-19 |
20130240856 | Light-Emitting Element and Display Device - There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. A light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided. | 2013-09-19 |
20130240857 | LIGHT-EMITTING ELEMENT - A light-emitting element is provided. The light-emitting element includes a first half-transmitting/reflecting film and a second half-transmitting/reflecting film sequentially on an organic layer by physical vapor deposition. | 2013-09-19 |
20130240858 | ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device including opposite anode and cathode, and a hole-transporting region, an emitting layer and an electron-transporting region in sequential order from the anode between the anode and the cathode, wherein the emitting layer includes a red emitting portion, a green emitting portion, and a blue emitting portion; the blue emitting portion includes a host BH and a fluorescent dopant FBD; the triplet energy E | 2013-09-19 |
20130240859 | TANDEM ORGANIC ELECTROLUMINESCENCE DEVICE - A tandem organic electroluminescence device including a first emitting unit ( | 2013-09-19 |
20130240860 | Composite Diode, Electronic Device, and Methods of Making the Same - A composite diode ( | 2013-09-19 |
20130240861 | ORGANIC ELECTROLUMINESCENCE ELEMENT - Providing an organic electroluminescence element that can reduce the unevenness of the brightness and can improve the external quantum efficiency. The organic electroluminescence element includes a substrate | 2013-09-19 |
20130240862 | ADHESIVE FILM AND METHOD OF ENCAPSULATING ORGANIC ELECTRODE DEVICE USING THE SAME - An adhesive film, and a product and method of encapsulating an organic electronic device (OED) using the same are provided. The adhesive film serves to encapsulate the OED and includes a curable hot-melt adhesive layer including a curable resin and a moisture absorbent, and the curable hot-melt adhesive layer includes a first region coming in contact with the OED upon encapsulation of the OED and a second region not coming in contact with the OED. Also, the moisture absorbent is present at contents of 0 to 20% and 80 to 100% in the first and second regions, respectively, based on the total weight of the moisture absorbent in the adhesive layer. | 2013-09-19 |
20130240863 | ORGANIC ELECTROLUMINESCENT LIGHT EMITTING DISPLAY DEVICE - In an organic electroluminescent light emitting display device comprising a plurality of pixels each of which includes an organic electroluminescent element emitting light by a current supplied thereto, a plurality of active elements including a first active element which acquires a data signal and a second active element which regulates the current supplied to the organic electroluminescent element in accordance with the data signal, and a capacitive element storing the data signal, the present invention utilizes a part of the capacitive element arranged in one of the pixels for a light shielding member which shields the plurality of active elements arranged the one of the pixels from light emitted by the organic electroluminescent element arranged therein or another pixel adjacent thereto so as to suppress image quality deterioration and smear appearing in an image display area of the organic electroluminescent light emitting display device. | 2013-09-19 |
20130240864 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE - An organic light-emitting display device includes a first substrate having transmitting regions and pixel regions separated from each other by the transmitting regions, a plurality of thin film transistors on the first substrate in the pixel regions, a passivation layer covering the plurality of thin film transistors, a plurality of pixel electrodes on the passivation layer and electrically connected to the thin film transistors, the pixel electrodes being in the pixel regions and overlapping the thin film transistors, an opposite electrode in the transmitting regions and the pixel regions, the opposite electrode facing the plurality of pixel electrodes and being configured to transmit light, an organic emission layer interposed between the pixel electrodes and the opposite electrode, and a color filter in corresponding pixel regions. | 2013-09-19 |
20130240865 | ELECTROACTIVE MATERIALS - There is provided an electroactive compound having Formula | 2013-09-19 |
20130240866 | ELECTROACTIVE MATERIAL AND DEVICES MADE WITH SUCH MATERIALS - There is provided a compound having Formula I or Formula II | 2013-09-19 |
20130240867 | ORGANIC ELECTROLUMINESCENT DEVICE AND FABRICATION METHOD THEREOF - An organic electroluminescent device (OELD) and the fabrication method thereof are disclosed. The OELD comprises an anode( | 2013-09-19 |
20130240868 | ANTHRACENE DERIVATIVE COMPOUNDS FOR ELECTRONIC APPLICATIONS - This invention relates to electroactive compositions including anthracene derivative compounds. It also relates to electronic devices in which at least one active layer includes such a composition. | 2013-09-19 |
20130240869 | ANTHRACENE DERIVATIVE COMPOUNDS FOR ELECTRONIC APPLICATIONS - This invention relates to electroactive compositions including anthracene derivative compounds. It also relates to electronic devices in which at least one active layer includes such a composition. | 2013-09-19 |
20130240870 | VAPOR DEPOSITION DEVICE, VAPOR DEPOSITION METHOD AND ORGANIC EL DISPLAY DEVICE - A vapor deposition source ( | 2013-09-19 |
20130240871 | PROCESS FOR PRODUCTION OF FUNCTIONAL DEVICE, PROCESS FOR PRODUCTION OF FERROELECTRIC MATERIAL LAYER, PROCESS FOR PRODUCTION OF FIELD EFFECT TRANSISTOR, THIN FILM TRANSISTOR, FIELD EFFECT TRANSISTOR, AND PIEZOELECTRIC INKJET HEAD - A method of producing a functional device according to the present invention includes, in this order: the functional solid material precursor layer formation step of applying a functional liquid material onto a base material to form a precursor layer of a functional solid material; the drying step of heating the precursor layer to a first temperature in a range from 80° C. to 250° C. to preliminarily decrease fluidity of the precursor layer; the imprinting step of imprinting the precursor layer that is heated to a second temperature in a range from 80° C. to 300° C. to form an imprinted structure on the precursor layer; and the functional solid material layer formation step of heat treating the precursor layer at a third temperature higher than the second temperature to transform the precursor layer into a functional solid material layer. | 2013-09-19 |
20130240872 | SEMICONDUCTOR DEVICE - In the transistor including a gate electrode and an oxide semiconductor film which are provided to overlap with each other with a gate insulating film provided therebetween and a first electrode and a second electrode which are in contact with the oxide semiconductor film, the second electrode partly surrounds an end portion and side surface portions of the first electrode. In the oxide semiconductor film, a channel region is formed in a region which overlaps with the gate electrode and which is between the first electrode and the second electrode. An end portion of the oxide semiconductor film which continuously extends from end portions of the channel region does not overlap with the gate electrode. | 2013-09-19 |
20130240873 | SEMICONDUCTOR DEVICE - To provide a semiconductor device with low power consumption in which a malfunction due to drop in voltage, delay of signal transmission, distortion of a signal waveform, and the like, which are caused by increase in wiring resistance, and decrease in reliability are prevented. A gate wiring is formed of a conductive layer containing copper, and a signal wiring formed of part of the same conductive layer as a source electrode and a drain electrode and a wiring formed of part of the same conductive layer as the gate wiring are electrically connected to each other in series or in parallel; thus, wiring resistance of the signal wiring is substantially decreased without an increase in width or thickness of the signal wiring. | 2013-09-19 |
20130240874 | LAYERED FILM INCLUDING HETEROEPITAXIAL PN JUNCTION OXIDE THIN FILM - Semiconductors of different types are formed by a crystal growth technique and joined at the interface at which rapid atomic-layer-level compositional changes occur while maintaining high crystallinity of the semiconductor layers so as to form a heterogeneous PN junction. A layered film that includes a PN junction oxide thin film is formed on a single crystal substrate. The PN junction oxide thin film is constituted by an N-type semiconductor oxide thin film and a P-type semiconductor oxide thin film that are epitaxially grown to have c-axis orientation represented by (00k). | 2013-09-19 |
20130240875 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device in which the parasitic resistance affected by a source and a drain is reduced and the parasitic capacitance is small is provided. The semiconductor device includes a pair of semiconductor layers; a semiconductor film in contact with each of the pair of semiconductor layers; a gate electrode overlapping with the semiconductor film and at least partly overlapping with the pair of semiconductor layers; and a gate insulating film between the semiconductor film and the gate electrode. A region which is in the pair of semiconductor layers and overlaps with the gate electrode and the semiconductor film has higher resistance than regions other than the region in the pair of semiconductor layers. | 2013-09-19 |
20130240876 | Non-polar plane of wurtzite structure material - The present invention relates to a method for growing a novel non-polar (13 | 2013-09-19 |
20130240877 | Semiconductor Device and Wireless Tag Using the Same - In a wireless tag with which a wireless communication system whose electric power of a carrier wave from a R/W is high, an overvoltage protection circuit is provided to prevent from generating excessive electric power in the wireless tag when the wireless tag receives excessive electric power. However, as noise is generated by operation of the overvoltage protection circuit, an error of reception occurs in receiving a signal whose modulation factor is small. To solve the problem, the maximum value of generated voltage in the wireless tag is held in a memory circuit after the overvoltage protection circuit operates, then the overvoltage protection circuit is controlled in accordance with the maximum value of generated voltage. The voltages at which the overvoltage protection circuit starts and stops operating are different from each other, and hysteresis occurs between the timing when the overvoltage protection circuit starts and stops operating. | 2013-09-19 |
20130240878 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - A thin film transistor comprising: a substrate; a gate electrode on the substrate; a gate insulation film on the gate electrode; an oxide semiconductor layer on the gate insulation film; a channel protection film on the oxide semiconductor layer; source and drain electrodes on the channel protection film; and a passivation film on the source and drain electrodes, wherein, (a) each of the gate insulation film, and passivation film comprises a laminated structure and includes a first layer made of aluminum oxide and a second layer made of an insulation material including silicon, and (b) the passivation film covers edges of the oxide semiconductor layer. The transistor is capable of suppressing desorption of oxygen and from the oxide semiconductor layer and reducing the time for film formation thereof. | 2013-09-19 |
20130240879 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME - A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented. | 2013-09-19 |
20130240880 | DIRECT BANDGAP SUBSTRATES AND METHODS OF MAKING AND USING - An indirect bandgap thin film semiconductor circuit can be combined with a compound semiconductor LED such as to provide an active matrix LED array that can have high luminous capabilities such as for a light projector application. In another example, a highly efficient optical detector is achievable through the combination of indirect and direct bandgap semiconductors. Applications can include display technologies, light detection, MEMS, chemical sensors, or piezoelectric systems. An LED array can provide structured illumination, such as for a light and pattern source for projection displays, such as without requiring spatial light modulation (SLM). An example can combine light from separate monolithic light projector chips, such as providing different component colors. An example can provide full color from a single monolithic light projector chip, such as including selectively deposited phosphors, such as to contribute individual component colors to an overall color of a pixel. | 2013-09-19 |
20130240881 | COATING LIQUID FOR FORMING METAL OXIDE THIN FILM, METAL OXIDE THIN FILM, FIELD EFFECT TRANSISTOR, AND METHOD FOR PRODUCING THE FIELD EFFECT TRANSISTOR - A coating liquid for forming a metal oxide thin film, the coating liquid including: an inorganic indium compound; at least one of an inorganic magnesium compound and an inorganic zinc compound; and a glycol ether. | 2013-09-19 |
20130240882 | DIE, WAFER AND METHOD OF PROCESSING A WAFER - A die in accordance with various embodiments may include a metallization area located proximate an edge of the die, and an electrical connection connected to the metallization area and running from the metallization area to the edge, wherein the electrical connection is free from metal. A wafer in accordance with various embodiments may include a die region having a metallization area, a kerf region having an electric or electronic device, and an electrical connection connecting the electric or electronic device with the metallization area, wherein the electrical connection is free from metal. | 2013-09-19 |
20130240883 | Contact Test Structure and Method - A system and method for testing electrical connections is provided. In an embodiment one or more floating pads may be manufactured in electrical connection with an underbump metallization structure. A test may then be performed to measure the electrical characteristics of the underbump metallization structure through the floating pad in order to test for defects. Alternatively, a conductive connection may be formed on the underbump metallization and the test may be performed on the conductive connection and the underbump metallization together. | 2013-09-19 |
20130240884 | DETECTION OF ENVIRONMENTAL CONDITIONS IN A SEMICONDUCTOR CHIP - A capacitive sensor and measurement circuitry is described that may be able to reproducibly measure miniscule capacitances and variations thereof. The capacitance may vary depending upon local environmental conditions such as mechanical stress (e.g., warpage or shear stress), mechanical pressure, temperature, and/or humidity. It may be desirable to provide a capacitor integrated into a semiconductor chip that is sufficiently small and sensitive to accurately measure conditions expected to be experienced by a semiconductor chip. | 2013-09-19 |