35th week of 2013 patent applcation highlights part 20 |
Patent application number | Title | Published |
20130221481 | SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE, THIN FILM TRANSISTOR, SEMICONDUCTOR CIRCUIT, LIQUID CRYSTAL DISPLAY APPARATUS, ELECTROLUMINESCENCE APPARATUS, WIRELESS COMMUNICATION APPARATUS, AND LIGHT EMITTING APPARATUS - A semiconductor substrate ( | 2013-08-29 |
20130221482 | METAL-INSULATOR-METAL CAPACITOR - A capacitor suitable for inclusion in a semiconductor device includes a substrate, a first metallization level, a capacitor dielectric, a capacitor plate, an interlevel dielectric layer, and a second metallization level. The first metallization level overlies the substrate and includes a first metallization plate overlying a capacitor region of the substrate. The capacitor dielectric overlies the first metallization plate and includes a dielectric material such as a silicon oxide or silicon nitride compound. The capacitor plate is an electrically conductive structure that overlies the capacitor dielectric. The interlevel dielectric overlies the capacitor plate. The second metallization layer overlies the interlevel dielectric layer and may include a second metallization plate and a routing element. The routing element may be electrically connected to the capacitor plate. The metallization plates may include a fingered structure that includes a plurality of elongated elements extending from a cross bar. | 2013-08-29 |
20130221483 | Trench Capacitors and Methods of Forming the Same - A method of forming a semiconductor device includes forming an opening having a sidewall in a substrate and forming a first epitaxial layer in the opening. The first epitaxial layer is formed in a first portion of the sidewall without growing in a second portion of the sidewall. A second epitaxial layer is formed in the opening after forming the first epitaxial layer. The second epitaxial layer is formed in the second portion of the sidewall. The first epitaxial layer is removed after forming the second epitaxial layer. | 2013-08-29 |
20130221484 | THROUGH SILICON VIA NOISE SUPPRESSION USING BURIED INTERFACE CONTACTS - Circuits for shielding devices from electromagnetic coupling with through-silicon vias are shown that include a substrate having a through via, which provides access to a device layer on a first surface of the circuit to a device layer on a second surface of the circuit; a conductive layer on the first side of the substrate; a contact point on one of the device layers; and a grounded buried interface tie on the conductive layer, adjacent to the contact point, to isolate the contact point from coupling noise. | 2013-08-29 |
20130221485 | WIRING BOARDS AND SEMICONDUCTOR MODULES INCLUDING THE SAME - A wiring board includes a metal core including a first surface and a second surface facing each other and a first portion and a second portion disposed on the first and second surfaces, respectively. The first and second portions each include a plurality of insulating layers and a plurality of wiring layers stacked in an alternating manner. At least one capacitor is disposed in at least one interior region. The at least one capacitor includes first and second electrodes. The at least one interior region exposes a portion of the metal core and a portion of at least one of the first and second portions adjacent to the metal core and at least one first via electrically connects one of the wiring layers of the first portion with the first and second electrodes. | 2013-08-29 |
20130221486 | TRANSISTOR WITH MIM (METAL-INSULATOR-METAL) CAPACITOR - The orientation polarization (positive and negative) of the Si—N bonds and the Si—O bonds is canceled, thereby enabling to minimize the polarization in a capacitive insulating film. As a result, a silicon oxynitride film with a small voltage secondary coefficient is formed, and is applied as a capacitive insulating film for use in a MIM capacitor. Specifically, the refractive index of the silicon oxynitride film satisfies 1.47≦n≦1.53, for light with a wavelength of 633 nm. | 2013-08-29 |
20130221487 | METHOD OF FORMING RESISTOR OF SEMICONDUCTOR MEMORY DEVICE AND STRUCTURE THEREOF - A resistor in a semiconductor memory device is formed by the steps of, inter alia: forming a first helical resistor extending from a first point toward a center in a clockwise or counterclockwise direction, forming a second helical resistor extending from the center to a second point in an opposite direction, wherein the first and second helical resistors are connected to each other at the center, and wherein the first and second helical resistors do not overlap. | 2013-08-29 |
20130221488 | SEMICONDUCTOR DEVICES WITH GRADED DOPANT REGIONS - Most semiconductor devices manufactured today, have uniform dopant concentration, either in the lateral or vertical device active (and isolation) regions. By grading the dopant concentration, the performance in various semiconductor devices can be significantly improved. Performance improvements can be obtained in application specific areas like increase in frequency of operation for digital logic, various power MOSFET and IGBT ICS, improvement in refresh time for DRAM's, decrease in programming time for nonvolatile memory, better visual quality including pixel resolution and color sensitivity for imaging ICs, better sensitivity for varactors in tunable filters, higher drive capabilities for JFET's, and a host of other applications. | 2013-08-29 |
20130221489 | INKS AND PROCESSES TO MAKE A CHALCOGEN-CONTAINING SEMICONDUCTOR - The present invention relates to a process to make a chalcogen-containing semiconductor comprising copper, zinc and tin and to inks used in the process. The inks comprise at least one copper, zinc or tin source which is elemental particles of the particular metal. | 2013-08-29 |
20130221490 | METHOD FOR GROWING GROUP 13 NITRIDE CRYSTAL AND GROUP 13 NITRIDE CRYSTAL - To grow a gallium nitride crystal, a seed-crystal substrate is first immersed in a melt mixture containing gallium and sodium. Then, a gallium nitride crystal is grown on the seed-crystal substrate under heating the melt mixture in a pressurized atmosphere containing nitrogen gas and not containing oxygen. At this time, the gallium nitride crystal is grown on the seed-crystal substrate under a first stirring condition of stirring the melt mixture, the first stirring condition being set for providing a rough growth surface, and the gallium nitride crystal is subsequently grown on the seed-crystal substrate under a second stirring condition of stirring the melt mixture, the second stirring condition being set for providing a smooth growth surface. | 2013-08-29 |
20130221491 | FIN FIELD-EFFECT TRANSISTORS HAVING CONTROLLED FIN HEIGHT AND METHOD OF MAKING - A semiconductor apparatus includes fin field-effect transistor (FinFETs) having controlled fin heights. The apparatus includes a high fin density area and a low fin density area. Each fin density area includes fins and dielectric material between the fins. The dielectric material includes different dopant concentrations for different fin density areas and is the same material as deposited. | 2013-08-29 |
20130221492 | METHOD OF MANUFACTURING SEMICONDUCTOR WAFER, AND COMPOSITE BASE AND COMPOSITE SUBSTRATE FOR USE IN THAT METHOD - A method of manufacturing a semiconductor wafer of the present invention includes the steps of: obtaining a composite base by forming a base surface flattening layer having a surface RMS roughness of not more than 1.0 nm on a base; obtaining a composite substrate by attaching a semiconductor crystal layer to a side of the composite base where the base surface flattening layer is located; growing at least one semiconductor layer on the semiconductor crystal layer of the composite substrate; and obtaining the semiconductor wafer including the semiconductor crystal layer and the semiconductor layer by removing the base surface flattening layer by wet etching and thereby separating the semiconductor crystal layer from the base. Thus, a method of manufacturing a semiconductor wafer capable of efficiently manufacturing the semiconductor wafer regardless of the type of a base, and a composite base and a composite substrate suitably used in that manufacturing method are provided to efficiently manufacture a semiconductor device. | 2013-08-29 |
20130221493 | SEMICONDUCTOR PACKAGE - Semiconductor packages are disclosed. A semiconductor package includes: a first chip that includes a chip region and scribe regions at edges of the chip region, wherein the chip region comprises integrated circuit units and main through substrate vias electrically connected to the integrated circuit units; and a second chip that is bonded onto the first chip. The semiconductor package includes dummy conductive connectors including at least dummy wiring lines, the dummy conductive connectors electrically connected to the main through substrate vias at one end, and not capable of forming an electrical connection at the other end. | 2013-08-29 |
20130221494 | STRUCTURE AND METHOD FOR STRAIN-RELIEVED TSV - A semiconductor die including strain relief for through substrate vias (TSVs). The semiconductor die includes a semiconductor substrate having an active face. The semiconductor substrate includes conductive layers connected to the active face, The semiconductor die also includes a through substrate via extending only through the substrate. The through substrate via may include a substantially constant diameter through a length of the through substrate via. The through substrate via may be filled with a conductive filler material. The semiconductor die also includes an isolation layer surrounding the through substrate via. The isolation layer may include two portions: a recessed portion near the active face of the substrate capable of relieving stress from the conductive filler material, and a dielectric portion. A composition of the recessed portion may differ from the dielectric portion. | 2013-08-29 |
20130221495 | OXIDE MICROCHANNEL WITH CONTROLLABLE DIAMETER - Described herein is a microchannel that is formed beneath and parallel to a surface of a silicon substrate. Silicon migration technology is utilized to form a microchannel that is buried beneath the surface of the silicon substrate. Etching opens at least one end of the microchannel. Oxidization is utilized through the open end of the microchannel to facilitate a controlled diameter of the microchannel. | 2013-08-29 |
20130221496 | METALLIC CARRIER FOR LAYER TRANSFER AND METHODS FOR FORMING THE SAME - Embodiments relate to semiconductor structures and methods of forming them. In some embodiments, the methods may be used to fabricate a semiconductor substrate by forming a weakened zone in a donor structure at a predetermined depth to define a transfer layer between an attachment surface and the weakened zone and a residual donor structure between the weakened zone and a surface opposite the attachment surface. A metallic layer is formed on the attachment surface and provides an ohmic contact between the metallic layer and the transfer layer, a matched Coefficient of Thermal Expansion (CTE) for the metallic layer that closely matches a CTE of the transfer layer, and sufficient stiffness to provide structural support to the transfer layer. The transfer layer is separated from the donor structure at the weakened zone to form a composite substrate comprising the transfer layer the metallic layer. | 2013-08-29 |
20130221497 | METHOD FOR THE PRODUCTION OF A SUBSTRATE COMPRISING EMBEDDED LAYERS OF GETTER MATERIAL - A method for producing a substrate with buried layers of getter material, including: making a first stack including one layer of a first getter material, arranged on a first support; making a second stack including one layer of a second getter material, arranged on a second support; and bringing the first stack into contact with the second stack and performing thermocompression, the layers of the first and of the second getter material being arranged between the first and the second support, at a temperature greater than or equal to a lowest temperature among thermal activation temperatures of the first and of the second getter material, to bond the layers of the first and second getter materials together. | 2013-08-29 |
20130221498 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device having a trench gate structure is formed by self alignment. The manufacturing method of the semiconductor device includes: forming a control electrode in an interior of trenches, etching a semiconductor layer between adjacent trenches to form an opening having a depth that is about level with an upper end of the control electrode with a portion of the semiconductor layer remaining between the opening and the control electrode, forming a first semiconductor region of the second conductive type from the surface of the semiconductor layer to a depth above the lower end of the control electrode, forming a single crystallized conductive layer from the first semiconductor region and the portion of the semiconductor layer, and forming a second semiconductor region, the second semiconductor region including the portion of the semiconductor layer and the single crystallized portion of the conductive layer. | 2013-08-29 |
20130221499 | Semiconductor Package with Integrated Electromagnetic Shielding - There are disclosed herein various implementations of a shield interposer situated between a top active die and a bottom active die for shielding the active dies from electromagnetic noise. One implementation includes an interposer dielectric layer, a through-silicon via (TSV) within the interposer dielectric layer, and an electromagnetic shield. The TSV connects the electromagnetic shield to a first fixed potential. The electromagnetic shield may include a grid of conductive layers laterally extending across the shield interposer. The shield interposer may also include another electromagnetic shield connected to another fixed potential. | 2013-08-29 |
20130221500 | System-In-Package with Integrated Socket - There are disclosed herein various implementations of a system-in-package with integrated socket. In one such implementation, the system-in-package includes a first active die having a first plurality of electrical connectors on a top surface of the first active die, an interposer situated over the first active die, and a second active die having a second plurality of electrical connectors on a bottom surface of the second active die. The interposer is configured to selectively couple at least one of the first plurality of electrical connectors to at least one of the second plurality of electrical connectors. In addition, a socket encloses the first and second active dies and the interposer, the socket being electrically coupled to at least one of the first active die, the second active die, and the interposer. | 2013-08-29 |
20130221501 | DEVICES AND METHODS RELATED TO INTERCONNECT CONDUCTORS TO REDUCE DE-LAMINATION - Disclosed are systems, devices and methods for utilizing an interconnect conductor to inhibit or reduce the likelihood of de-lamination of a passivation layer of an integrated circuit die. In some implementations, a metal layer in ohmic contact with an intrinsic region of a semiconductor substrate can be partially covered by a passivation layer such as a dielectric layer. An interconnect conductor electrically connected to the metal layer can include an extension that covers an edge of the passivation layer to thereby inhibit the edge from lifting up. In some implementations, the metal layer in combination with a contact pad also in ohmic contact with the intrinsic region can yield a conduction path through the intrinsic region during an electrostatic discharge (ESD) event. In such a configuration, the interconnect conductor can route the ESD charge to a ground. | 2013-08-29 |
20130221502 | JOINED BODY, POWER SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS OF JOINED BODY AND POWER SEMICONDUCTOR DEVICE - First, an aqueous solution ( | 2013-08-29 |
20130221503 | SEMICONDUCTOR PACKAGE - A semiconductor package including a semiconductor chip; a base member on which the semiconductor chip is mounted; a plurality of leads formed on the base member, the leads including inner ends electrically connected to the semiconductor chip and outer ends; and an index for identifying locations of specific leads. | 2013-08-29 |
20130221504 | SEMICONDUCTOR MODULE AND METHOD OF MANUFACTURING A SEMICONDUCTOR MODULE - An exemplary semiconductor module includes a substrate formed of a ceramic insulator, and at least one metallic layer formed on the substrate. The metallic layer includes a deepening for placing and fixing a contact element. The contact element is at least partially “L”-shaped and includes a first arm for fixing the contact element at the deepening, and a second arm for interconnecting the contact element with an external device. The deepening has a horizontal dimension which is about ≦0.5 mm bigger than the horizontal dimension of the contact element. | 2013-08-29 |
20130221505 | PRINTED WIRING BOARD - A printed wiring board includes a substrate, a first buildup formed on a first surface of the substrate and including the outermost conductive layer, and a second buildup layer formed on a second surface of the substrate and including the outermost conductive layer. The outermost layer of the first buildup has pads positioned to connect a semiconductor component, the first buildup has a component mounting region directly under the component such that the outermost layer of the first buildup has a portion in the region, the outermost layer of the second buildup has a portion directly under the region, and the portions satisfy the ratio in the range of from 1.1 to 1.35, where the ratio is obtained by dividing a planar area of the portion of the second buildup by a planar area of the portion of the first buildup. | 2013-08-29 |
20130221506 | Semiconductor Packages with Integrated Heat Spreaders - One implementation of present disclosure includes a semiconductor package stack. The semiconductor package stack includes an upper package coupled to a lower package by a plurality of solder balls. The semiconductor package stack also includes a lower active die situated in a lower package substrate in the lower package. The lower active die is thermally coupled to a heat spreader in the upper package by a thermal interface material. An upper active die is situated in an upper package substrate in the upper package, the upper package substrate being situated over the heat spreader. The thermal interface material can include an array of aligned carbon nanotubes within a filler material. The heat spreader can include at least one layer of metal or metal alloy. Furthermore, the heat spreader can be connected to ground or a DC voltage source. The plurality of solder balls can be situated under the heat spreader. | 2013-08-29 |
20130221507 | ALUMINUM ALLOY LEAD-FRAME AND ITS USE IN FABRICATION OF POWER SEMICONDUCTOR PACKAGE - A semiconductor package is provided with an Aluminum alloy lead-frame without noble metal plated on the Aluminum base lead-frame. Aluminum alloy material with proper alloy composition and ratio for making an aluminum alloy lead-frame is provided. The aluminum alloy lead-frame is electroplated with a first metal electroplating layer, a second electroplating layer and a third electroplating layer in a sequence. The lead-frame electroplated with the first, second and third metal electroplating layers is then used in the fabrication process of a power semiconductor package including chip connecting, wire bonding, and plastic molding. After the molding process, the area of the lead-frame not covered by the molding compound is electroplated with a fourth metal electroplating layer that is not easy to be oxidized when exposing to air. | 2013-08-29 |
20130221508 | SEMICONDUCTOR DEVICE SEALED WITH A RESIN MOLDING - An apparatus provides good bonding between a package structure and a substrate and extended solder bonding life, even under heat stress. Of a lead frame to be used for a package structure having a configuration in which a semiconductor chip, an island of the lead frame, and external connection terminals are sealed with a resin from one surface, and the island and the external connection terminals are exposed on the other surface, the external connection terminals include a first external connection terminal disposed at a central part of each of sides of an outer rim of a semiconductor chip mounting region in which the semiconductor chip is to be mounted and a second external connection terminal outside the first external connection terminal at each of the sides of the outer rim of the semiconductor chip mounting region, wherein the first external connection terminal area exceeds the second external connection terminal's. | 2013-08-29 |
20130221509 | LEAD FRAME FOR MOUNTING LED ELEMENTS, LEAD FRAME WITH RESIN, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES, AND LEAD FRAME FOR MOUNTING SEMICONDUCTOR ELEMENTS - A lead frame for mounting LED elements includes a frame body region and a large number of package regions arranged in multiple rows and columns in the frame body region. The package regions each include a die pad on which an LED element is to be mounted and a lead section adjacent to the die pad, the package regions being further constructed to be interconnected via a dicing region. The die pad in one package region and the lead section in another package region upward or downward adjacent to the package region of interest are connected to each other by an inclined reinforcement piece positioned in the dicing region. | 2013-08-29 |
20130221510 | METHODS FOR BONDING MATERIAL LAYERS TO ONE ANOTHER AND RESULTANT APPARATUS - Methods and apparatus provide for a structure, including: a first glass material layer; and a second material layer bonded to the first glass material layer via bonding material, where the bonding material is formed from one of glass frit material, ceramic frit material, glass ceramic frit material, and metal paste, which has been melted and cured. | 2013-08-29 |
20130221511 | METHOD FOR FORMING DIE ASSEMBLY WITH HEAT SPREADER - A method for forming a molded die assembly includes attaching a first major surface of a semiconductor die onto a package substrate; attaching a heat spreader to a second major surface of the semiconductor die, wherein the second major surface is opposite the first major surface, and wherein the semiconductor die, package substrate, and heat spreader form a die assembly; conforming a die release film to a transfer mold; closing the transfer mold around the die assembly such that the die release film is compressed against the heat spreader and a cavity is formed around the die assembly; transferring a thermoset material into the cavity; and releasing the die assembly from the die release film and the transfer mold. | 2013-08-29 |
20130221512 | STRUCTURE AND MANUFACTURING METHOD OF CHIP SCALE PACKAGE - A Chip Scale Package (CSP) and a method of forming the same are disclosed. Single chips without the conventional ball mountings, are first attached to an adhesive-substrate (adsubstrate) composite having openings that correspond to the input/output (I/O) pads on the single chips to form a composite chip package. Ball mounting is then performed over the openings, thus connecting the I/O pads at the chip sites to the next level of packaging directly. In another embodiment, the adhesive layer is formed on the wafer side first to form an adwafer, which is then die sawed in CSPs. Then the CSPs with the adhesive already on them are bonded to a substrate. The composite chip package may optionally be encapsulated with a molding material. The CSPs provide integrated and shorter chip connections especially suited for high frequency circuit applications, and can leverage the currently existing test infrastructure. | 2013-08-29 |
20130221513 | Power Semiconductor Module System with Undercut Connection - A semiconductor module system includes a first semiconductor module and a second semiconductor module. The first semiconductor module has a first housing and a first base plate. The second semiconductor module has a second housing and a second base plate. The first base plate includes a first fitting segment fitted with a semiconductor component, and a first adjustment segment separated from the first fitting segment. The first adjustment segment also has a first adjustment device. The second base plate has a second adjustment device. The first semiconductor module and the second semiconductor module are configured to be positioned relative to one another using the first adjustment device and the second adjustment device so as to form at least one undercut connection. The first fitting segment and the first adjustment segment are connected to the first housing in a captive manner even when the undercut connection is not formed. | 2013-08-29 |
20130221514 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD FOR THE SAME - Provided is a double-sided cooling structure for a semiconductor device using a low processing temperature and reduced processing time utilizing solid phase diffusion bonding. The fabrication method for this system is provided. The semiconductor device | 2013-08-29 |
20130221515 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device including a first region and a second region contacting the first region along a boundary line, includes forming a pattern having an on-boundary-line line portion with a width defined by a first line which is arranged in the first region and is parallel to the boundary line, and a second line which is arranged in the second region and is parallel to the boundary line. The forming the pattern includes independently performing, for a photoresist applied on a substrate, first exposure for defining the first line, and second exposure for defining the second line, and developing the photoresist having undergone the individually performing the first exposure and the second exposure. | 2013-08-29 |
20130221516 | POWER SEMICONDUCTOR MODULE - A power semiconductor module ( | 2013-08-29 |
20130221517 | SEMICONDUCTOR WORKPIECE WITH BACKSIDE METALLIZATION AND METHODS OF DICING THE SAME - Various semiconductor workpieces and methods of dicing the same are disclosed. In one aspect, a method of manufacturing is provided that includes forming a channel in a metallization structure on a backside of a semiconductor workpiece. The semiconductor workpiece includes a substrate. The channel is in substantial alignment with a dicing street on a front side of the semiconductor chip. | 2013-08-29 |
20130221518 | PRINTED WIRING BOARD - A printed wiring board includes a core substrate, a first buildup layer laminated on a first surface of the core substrate and including the outermost interlayer resin insulation layer and the outermost conductive layer formed on the outermost interlayer resin insulation layer of the first buildup layer, and a second buildup layer laminated on a second surface of the core substrate and including the outermost interlayer resin insulation layer and the outermost conductive layer formed on the outermost interlayer resin insulation layer of the second buildup layer. The outermost conductive layer of the first buildup layer includes pads positioned to mount a semiconductor device on a surface of the first buildup layer, and the outermost interlayer resin insulation layer of the first buildup layer has a thermal expansion coefficient which is set lower than a thermal expansion coefficient of the outermost interlayer resin insulation layer of the second buildup layer. | 2013-08-29 |
20130221519 | SEMICONDUCTOR DEVICES INCLUDING DUMMY SOLDER BUMPS - A semiconductor device includes a substrate on which integrated circuit units are formed, main solder bumps that are electrically connected to the integrated circuit units on the substrate and dummy solder bumps that are not electrically connected to the integrated circuit units on the substrate. The dummy solder bumps are narrower than wiring patterns immediately below the dummy solder bumps. | 2013-08-29 |
20130221520 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor chip SC includes an electrode pad PAD. A Cu pillar PIL is formed on the electrode pad PAD. In addition, an interconnect substrate INT includes a connection terminal TER. The connection terminal TER contains Cu. For example, the connection terminal TER is formed of Cu, and is formed, for example, in a land shape. However, the connection terminal TER may not be formed in a land shape. The Cu pillar PIL and the connection terminal TER are connected to each other through a solder layer SOL. The solder layer SOL contains Sn. A Ni layer NIL is formed on either the Cu pillar PIL or the connection terminal TER. The minimum value L of the thickness of the solder layer SOL is equal to or less than 20 μm. | 2013-08-29 |
20130221521 | SOLDER BUMP STRETCHING METHOD FOR FORMING A SOLDER BUMP JOINT IN A DEVICE - A method includes heating a solder bump above a melting temperature of the solder bump. The solder bump is stretched to increase a height of the solder bump. The solder bump is cooled down to form a solder bump joint in an electrical device. | 2013-08-29 |
20130221522 | MECHANISMS OF FORMING CONNECTORS FOR PACKAGE ON PACKAGE - The described embodiments of mechanisms of forming connectors for package on package enable smaller connectors with finer pitch, which allow smaller package size and additional connections. The conductive elements on one package are partially embedded in the molding compound of the package to bond with contacts or metal pads on another package. By embedding the conductive elements, the conductive elements may be made smaller and there are is gaps between the conductive elements and the molding compound. A pitch of the connectors can be determined by adding a space margin to a maximum width of the connectors. Various types of contacts on the other package can be bonded to the conductive elements. | 2013-08-29 |
20130221523 | ELECTRONIC DEVICE AND ELECTRONIC COMPONENT - The disclosure discloses an electronic device including an electronic component including a chip main body, a plurality of electrodes, a passivation which includes openings, and UBMs which are respectively formed to be smaller than an opening area of the opening, a substrate including a plurality of substrate electrodes, and a plurality of spherical solder bumps configured to electrically connect the plurality of electrodes with the plurality of substrate electrodes. The solder bump is bonded to the electrode at a bonding portion located on a bottom surface of the spherical shape. Each of the plurality of electrodes includes an exposed portion generated because a bonding area between the solder bump and the electrode via the UBM is smaller than the opening area. The solder bump is separated apart from the passivation via an upper space located above the exposed portion of the electrode. | 2013-08-29 |
20130221524 | INTEGRATED CIRCUITS WITH IMPROVED INTERCONNECT RELIABILITY USING AN INSULATING MONOLAYER AND METHODS FOR FABRICATING SAME - Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, an integrated circuit includes an interlayer dielectric material having a top surface and overlying semiconductor devices formed on a semiconductor substrate. The integrated circuit includes a metal interconnect formed in the interlayer dielectric material. The metal interconnect includes an upper surface to which an insulating monolayer is bonded. The integrated circuit further includes a dielectric cap that overlies the top surface of the interlayer dielectric material and encapsulates the insulating monolayer. | 2013-08-29 |
20130221525 | Semiconductor Package with Integrated Selectively Conductive Film Interposer - There are disclosed herein various implementations of semiconductor packages having a selectively conductive film interposer. In one such implementation, a semiconductor package includes a first active die having a first plurality of electrical connectors on a top surface of the first active die, a selectively conductive film interposer situated over the first active die, and a second active die having a second plurality of electrical connectors on a bottom surface of the second active die. The selectively conductive film interposer may be configured to serve as an interposer and to selectively couple at least one of the first plurality of electrical connectors to at least one of the second plurality of electrical connectors. | 2013-08-29 |
20130221526 | System in Package and Method for Manufacturing The Same - A system in package and a method for manufacturing the same is provided. The system in package comprises a laminate body having a substrate arranged inside a laminate body. A semiconductor die is embedded in the laminate body and the semiconductor is bonded to contact pads of the substrate by help of a sintered bonding layer, which is made from a sinter paste. Lamination of the substrate and further layers providing the laminate body and sintering of the sinter paste may be performed in a single and common curing step. | 2013-08-29 |
20130221527 | METALLIC CAPPED INTERCONNECT STRUCTURE WITH HIGH ELECTROMIGRATION RESISTANCE AND LOW RESISTIVITY - An interconnect structure including a metallic cap that covers 80 to 99% of the entire surface of an underlying conductive metal feature is provided utilizing a metal reflow process. Laterally extending portions of the conductive metal feature are located on vertical edges of the metallic cap, and each of the laterally extending portions of the conductive metal feature has an uppermost surface that is coplanar with an uppermost surface of the metallic cap. | 2013-08-29 |
20130221528 | DEVICES AND METHODS RELATED TO A SPUTTERED TITANIUM TUNGSTEN LAYER FORMED OVER A COPPER INTERCONNECT STACK STRUCTURE - Disclosed are devices and methods related to metallization of semiconductors. A metalized structure can include a stack disposed over a compound semiconductor, with the stack including a barrier, a copper (Cu) layer disposed over the barrier, and a first titanium (Ti) layer disposed over the Cu layer. The metalized structure can further include a sputtered titanium tungsten (TiW) layer disposed over the first Ti layer. The barrier can include an assembly of titanium nitride (TiN) and Ti layers. The metalized structure can further include a second Ti layer disposed over the sputtered TiW layer. | 2013-08-29 |
20130221529 | HYBRID INTERCONNECT STRUCTURE FOR PERFORMANCE IMPROVEMENT AND RELIABILITY ENHANCEMENT - A hybrid interconnect structure (of the single or dual damascene type) is provided in which a dense (i.e., non-porous) dielectric spacer is present on the sidewalls of a dielectric material. More specifically, the structure includes a dielectric material having a conductive material embedded within at least one opening in the dielectric material, wherein the conductive material is laterally spaced apart from the dielectric material by a diffusion barrier, a dense dielectric spacer and, optionally, an air gap. The presence of the dense dielectric spacer results in a hybrid interconnect structure that has improved reliability and performance. Moreover, the hybrid interconnect structure provides for better process control which leads to the potential for high volume manufacturing. | 2013-08-29 |
20130221530 | SEMICONDUCTOR DEVICE - There is provided a semiconductor device with which stress can be prevented from locally concentrating on an external connecting terminal on a post and thus damages of the external connecting terminal can be prevented. The semiconductor device includes a semiconductor chip, a sealing resin layer stacked on a surface of the semiconductor chip, and the post which penetrates the sealing resin layer in a stacking direction of the semiconductor chip and the sealing resin layer, protrudes from the sealing resin layer, and has a periphery of the protruding portion opposedly in contact with a surface of the sealing resin layer in the stacking direction. | 2013-08-29 |
20130221531 | SEMICONDUCTOR DEVICE, MEMORY SYSTEM AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - A semiconductor device includes first pads having centers offset in a first direction, wherein the first pads are arranged in a second direction crossing the first direction; second pads separated in the first direction from the first pads and arranged in the second direction, wherein centers of the second pads are offset in the first direction; first gate lines coupled to the first pads, respectively; and second gate lines coupled to the second pads, respectively. | 2013-08-29 |
20130221532 | SEMICONDUCTOR MODULE WITH SWITCHING ELEMENTS - In a semiconductor module, an upper arm switching element is integrated to a high-potential conductor coupled to a high-potential electrode of a power source, and a lower arm switching element is integrated to a load conductor coupled to a load. A first connecting conductor has a first end connected to the upper arm switching element and a second end connected to the load conductor. A second connecting conductor has a first end connected to the lower arm switching element and a second end connected to a low-potential conductor coupled to a low-potential electrode of the power source. At least one of the first connecting conductor and the second connecting conductor serves as a shunt resistor for detecting an electric current flowing in the at least one. | 2013-08-29 |
20130221533 | HIGH SPEED, HIGH DENSITY, LOW POWER DIE INTERCONNECT SYSTEM - A system for interconnecting at least two die each die having a plurality of conducting layers and dielectric layers disposed upon a substrate which may include active and passive elements. In one embodiment there is at least one interconnect coupling at least one conducting layer on a side of one die to at least one conducting layer on a side of the other die. Another interconnect embodiment is a slug having conducting and dielectric layers disposed between two or more die to interconnect between the die. Other interconnect techniques include direct coupling such as rod, ball, dual balls, bar, cylinder, bump, slug, and carbon nanotube, as well as indirect coupling such as inductive coupling, capacitive coupling, and wireless communications. The die may have features to facilitate placement of the interconnects such as dogleg cuts, grooves, notches, enlarged contact pads, tapered side edges and stepped vias. | 2013-08-29 |
20130221534 | Through Silicon Via Layout Pattern - A semiconductor device comprises a substrate with a first side and a second side, wherein a plurality of active circuits are formed adjacent to the first side of the substrate and a plurality of through silicon vias arranged in a polygon shape and extending from the first side of to the second side, wherein the polygon shape has more than six sides, and wherein each through silicon via is placed at a corresponding apex of the polygon shape. | 2013-08-29 |
20130221535 | Diffusion Barrier Layer, Metal Interconnect Arrangement and Method of Manufacturing the Same - A diffusion barrier layer, a metal interconnect arrangement and a method of manufacturing the same are disclosed. In one embodiment, the metal interconnect arrangement may comprise a conductive plug/interconnect wire for electrical connection, and a diffusion barrier layer provided on at least a portion of a surface of the conductive plug/interconnect wire. The diffusion barrier layer may comprise insulating amorphous carbon. | 2013-08-29 |
20130221536 | ENHANCED FLIP CHIP STRUCTURE USING COPPER COLUMN INTERCONNECT - A flip chip package includes a carrier coupled to a die. The carrier includes: at least a via, for coupling the surface of the carrier to electrical traces in the carrier; and at least a capture pad electrically coupled to the via, wherein the capture pad is plated over the via. The die includes: at least a bond pad formed on the surface of the die; and at least a copper column, formed on the bond pad for coupling the die to the capture pad on the carrier, wherein the copper column is disposed on one side of the capture pad about the via opening only. | 2013-08-29 |
20130221537 | SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS - A semiconductor device is provided in the present invention. The semiconductor device includes a silicon substrate, configured to bear a chip; a power management module arranged inside the silicon substrate, configured to convert a power supply voltage to an input voltage required by the chip; and an interconnecting system, configured to receive the power supply voltage, transmit the power supply voltage to the power management module, and transmit the input voltage to the chip. With the semiconductor device according to the embodiments of the present invention, the power supply voltage can be directly sent from the silicon substrate to the chip after being generated, thereby shortening the power supply link and reducing the power supply/ground noise. | 2013-08-29 |
20130221538 | SEMICONDUCTOR DEVICE - To reinforce power supply wirings without sacrificing the interconnectivity of semiconductor devices. When three wirings are formed in parallel in the same wiring layer and the center wiring among them is shorter than the outer wirings, a projecting portion integrated into the outer wiring is formed utilizing a free space remaining on the extension of the center wiring. For example, when the outer wirings are used as power supply wirings, the power supply wirings can be reinforced by adding the projecting portion. At this time, because the projecting portion is arranged in the free space, the interconnectivity is not sacrificed. | 2013-08-29 |
20130221539 | METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT WITH A THROUGH-CONTACT AND SEMICONDUCTOR COMPONENT WITH THROUGH-CONTACT - Through the intermetal dielectric ( | 2013-08-29 |
20130221540 | THREE-DIMENSIONAL SEMICONDUCTOR DEVICE COMPRISING AN INTER-DIE CONNECTION ON THE BASIS OF FUNCTIONAL MOLECULES - In a stacked chip configuration, the “inter chip” connection is established on the basis of functional molecules, thereby providing a fast and space-efficient communication between the different semiconductor chips. | 2013-08-29 |
20130221541 | INTEGRATED CIRCUITS INCLUDING AIR GAPS AROUND INTERCONNECT STRUCTURES, AND FABRICATION METHODS THEREOF - An integrated circuit which includes an interconnect structure disposed at least partially in at least one opening of a dielectric layer. The integrated circuit further includes at least one air gap disposed between the dielectric layer and the interconnect structure. The integrated circuit further includes at least one first liner material disposed under the at least one air gap, the at least one first liner material extending along a bottom portion of a sidewall of the at least one opening of the dielectric layer. | 2013-08-29 |
20130221542 | Functional Spacer for SIP and Methods for Forming the Same - A device includes a spacer, which includes a recess extending from a top surface of the spacer into the spacer, and a conductive feature including a first portion and a second portion continuously connected to the first portion. The first portion extends into the recess. The second portion is on the top surface of the spacer. A die is attached to the spacer, and a lower portion of the first die extends into the recess. | 2013-08-29 |
20130221543 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH INTERCONNECTS AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: providing a base substrate; mounting a base integrated circuit over the base substrate; attaching a lead to the base integrated circuit and the base substrate, the lead having a lead attachment portion over the base integrated circuit; and forming a base encapsulation over the lead, the base encapsulation having a cavity exposing the lead attachment portion. | 2013-08-29 |
20130221544 | MOLDING DIE, MICROCHIP MANUFACTURED BY USING MOLDING DIE, AND MANUFACTURING APPARATUS FOR MANUFACTURING MICROCHIP - A molding die for molding a substrate to be included in a microchip includes a first die and a second die contactable with and separable from the first die. A molding space for molding the substrate and a gate for introducing resin into the molding space are formed between the first die and the second die. A molding surface of the first die includes a first-die substrate molding region which molds the one surface of the substrate, a gate-defining region which defines the gate, and a rising region which is located between the gate-defining region and the first-die substrate molding region and extends from an edge of the first-die substrate molding region toward the second die. The gate-defining region is closer to the second die than the first-die substrate molding region. A microchip and a manufacturing apparatus also are provided. | 2013-08-29 |
20130221545 | DIFFUSER BAFFLE FOR GREASE INTERCEPTOR - A diffuser baffle for use in an in-line wastewater grease interceptor. The diffuser baffle lies within a grease collecting chamber between the inflow and outflow of a grease interceptor. The diffuser baffle has an open bottom which is sized and shaped respectively to fit into the grease collecting chamber. The diffuser baffle has an end operatively connected to the inflow opening to permit wastewater to flow into the body through the open bottom. The baffle has a downstream end which includes a deflector portion to deflect a wastewater stream in a direction generally into the grease collecting chamber. The body also includes a number of apertures to permit the deflected wastewater stream to pass through the baffle and into the grease collecting chamber, where FOG will separate before waste water exits the chamber through the outlet baffle. | 2013-08-29 |
20130221546 | Flat Sheet Membrane Module - A flat sheet membrane module is provided and includes a pair of laterally spaced membrane compartments formed therein for receiving and holding two sets of flat sheet membranes. A utility compartment is disposed between the membrane compartments and includes an air conduit for directing air downwardly through the module to air dispersers forming a part of the module or to a separate lower disposed module. Optionally, a permeate conduit may be provided in the utility compartment for channeling permeate from a lower disposed module. A support structure is disposed in each membrane compartment for receiving and holding a set of flat sheet membranes. The support structure includes a pair of plates that sandwich a set of flat sheet membranes together such that the flat sheet membranes of the set are disposed in a side-by-side relationship between the two end plates. | 2013-08-29 |
20130221547 | DATA CENTER CONTAINER WITH HUMIDIFIER - A data center container includes a chassis and a humidifier. The chassis includes a side plate. The side plate defines a through opening. The humidifier assembly includes a case and a humidifier. The case is secured to the side plate and covers the through opening. The humidifier is secured to the case and capable of adjusting the humidity in the chassis. | 2013-08-29 |
20130221548 | CARBON THIN FILM, MOLD FOR MOLDING OPTICAL ELEMENT, AND METHOD FOR MANUFACTURING OPTICAL ELEMENT - A ta-C thin film ( | 2013-08-29 |
20130221549 | WAFER LENS MANUFACTURING METHOD - Since a second molding surface | 2013-08-29 |
20130221550 | Method for producing photonic wire bonds - A method for making optical connections with optical waveguides includes mounting the optical waveguides or a device comprising the optical waveguides, on a component carrier. A partial region of the optical waveguides is embedded in a volume of resist material. Positions of the optical waveguides to be connected are detected with reference to a coordinate system using a measuring system. Favorable, three-dimensional geometries are determined for optical waveguide structures for connecting the optical waveguides to each other at predetermined connecting locations and the optical waveguide structure geometries are converted to a machine-readable dataset. The optical waveguide geometries in the volume of the resist material are three-dimensionally structured using a direct-writing lithography device operating on the basis of the machine-readable dataset. The structured resist material is treated using physical or chemical methods to form at least one optical waveguide structure having ends connected to predetermined connecting locations of the optical waveguides. | 2013-08-29 |
20130221551 | METHOD OF PRODUCING COMPOSITE OPTICAL ELEMENT - Provided is a method of producing a composite optical element, including performing stress removal after molding a composite optical element by integrating a resin material with one surface of a glass material in a heated state, in which, after the composite optical element prepared in the molding is cooled to a first cooling temperature lower than a glass transition temperature of the resin material, an interface layer of the resin material, the interface layer contacting the glass material, is heated to a temperature equal to or higher than the glass transition temperature of the resin material, by causing infrared light having a wavelength region in which an infrared absorptivity of the resin material is higher than that of the glass material to enter from another surface of the glass material, and then the composite optical element is cooled to a second cooling temperature lower than the first cooling temperature. | 2013-08-29 |
20130221552 | METERED PUMP SYSTEM FOR HYDROCAPSULE ENCAPSULATION - A metered pump system for hydrocapsule encapsulation is disclosed. In at least one embodiment, a system for hydrocapsule encapsulation includes a nozzle assembly and metered pump for encapsulating discrete droplets of liquid by generating a continuous coating of a polymerizable liquid which is substantially immiscible with the core liquid. The metered pump system is configured to control a stroke length and a pulsation speed to attain constant shear with each pump of water, and a volume of water in each stroke and a speed of the stroke is controlled. In at least one embodiment, the nozzle includes a material feed port, a polymer feed port, a water feed port, and an encapsulated material exit port. In at least one embodiment, the metered pump is configured for use in a hydrocapsule encapsulation system having a pressure control system, a water control system, sparging column, and ultraviolet exposure chamber system. | 2013-08-29 |
20130221553 | METHOD FOR PRODUCING TERYLENE FIBER USING POLYESTER WASTE - A method for producing terylene fiber using polyester waste is disclosed. Firstly, dried polyester waste is sent into a screw extruder, then is melt and extruded to be polyester melt. Whereafter, the melt is filtrated twice to remove impurities. Then macromolecule polymerization reaction is taken place in the polyester melt to homogenize the molecular weight of macromoleclar polymer and to increase the viscosity of the polyester. Then the melt with increased viscosity is finely filtrated using melt precision filter. Whereafter, the melt is sent into a spinning box to execute metering spinning, then is cooled and solidified to be filaments. Finally, the filaments are wound according to various process requirements. The method can increase the quality of regenerated polyester spinning melt. The regenerated polyester melt has less impurities and homogenous viscosity after multiple filtrating. The fiber product has advantages of less end breakage rate, high full-bobbin rate, high finished product rate and less wastage. | 2013-08-29 |
20130221554 | Non-Pre-Colored Multi-Layer Zirconia Dental Blank that has a Gradual Change in Translucency through a Thickness After Sintering - A dental block for producing a dental prosthesis comprises a green body including zirconia and having a chemical composition including increasing amounts of yttria through a thickness of the green body. The green body is substantially opaque with a substantially consistent optical characteristic of non-translucency with respect to visible light across the thickness, and is subsequently millable and sinterable to form the dental prosthesis with an optical characteristic of increasing translucency through a thickness of the dental prosthesis. | 2013-08-29 |
20130221555 | PROCESS FOR PRODUCING MOLDINGS - The invention relates to a process for producing moldings made of a fiber-reinforced polymer, comprising the following steps: | 2013-08-29 |
20130221556 | DETECTOR, IMPRINT APPARATUS AND METHOD OF MANUFACTURING ARTICLE - A detector, which detects a relative position between a first object and a second object in a first direction, includes: an illumination optical system configured to obliquely illuminate a first mark arranged on the first object, and a second mark arranged on the second object; and a detection optical system configured to detect interfering light generated by light beams diffracted by the first mark and the second mark, respectively, illuminated by the illumination optical system. The illumination optical system forms a light intensity distribution including at least one pole on a pupil plane thereof. The detection optical system includes a stop provided with an aperture on a pupil plane thereof. A shape of the aperture includes a side parallel to the first direction. | 2013-08-29 |
20130221557 | APPARATUS FOR CORRECTING THE BENDING OF A MOLTEN RESIN AND METHOD OF CORRECTING THE BENDING OF THE MOLTEN RESIN - An apparatus ( | 2013-08-29 |
20130221558 | APPARATUS FOR MANUFACTURING ABSORBENT BODY AND METHOD FOR MANUFACTURING AIR-PERMEABLE MEMBER - An apparatus for manufacturing an absorbent body of an absorbent article by depositing a liquid absorbent material on an air-permeable member by passing an air that contains the liquid absorbent material in a thickness direction of the air-permeable member, the apparatus including: a plurality of plates that are stacked in the thickness direction, that constitutes the air-permeable member, each of which includes a plurality of air holes that penetrate the plate in the thickness direction and that allow the air to pass, and each of which includes a joining portion for joining to an adjacent plate in the thickness direction in a portion of the plate in which the air holes are not formed, the plurality of air holes of each of the plates being arranged so as to communicate with corresponding air holes of an adjacent plate in the thickness direction, corresponding air holes of all the plates stacked in the thickness direction having a same shape. | 2013-08-29 |
20130221559 | Method For Producing A Multifilament Composite Thread And Melt Spinning Device - The invention relates to a device for the production of strand-shaped products such as synthetic bands, fiber strands, monofilaments, or films, which are extruded from a polymer melt. The device comprises an extrusion device, a cooling device, several rolling feed units and several processing devices mounted between the rolling feed units. In order to obtain short control paths and compact machine units, the processing devices according to the invention are arranged in tiers one above the other, wherein the rolling feed units face each other at both ends of the processing devices so that the product passes through the processing devices in the opposite direction. | 2013-08-29 |
20130221560 | PROCESS FOR FORMING UNEVEN STRUCTURE ON SURFACE OF SURFACE LAYER OF CYLINDRICAL ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER, AND PROCESS FOR PRODUCING CYLINDRICAL ELECTROPHOTOGRAPHIC PHOTOSENSITIVE MEMBER HAVING UNEVEN STRUCTURE FORMED ON SURFACE OF SURFACE LAYER OF SAME - In the case where an uneven structure is formed on the surface of cylindrical electrophotographic photosensitive members, for the purpose of reducing the variation of the uneven structure between the individual cylindrical electrophotographic photosensitive members even when a large number of cylindrical electrophotographic photosensitive members are continuously processed, an insert is inserted into the interior of a cylindrical electrophotographic photosensitive member including a cylindrical substrate and a surface layer, the surface uneven structure of a molding member is transferred to and formed on the surface of the surface layer of the photosensitive member. The insert includes an abutting part having an outer peripheral surface capable of abutting on the inner peripheral surface of the substrate, a connecting part positioned inside of the abutting part in the radical direction and a shaft part positioned inside of the connecting part in the radical direction. | 2013-08-29 |
20130221561 | Process for Preparing Pramipexole Dihydrochloride Tablets - The present invention relates to a process for preparing tablets of pramipexole dihydrochloride. In particular, the present invention relates to a process for preparing tablets of pramipexole dihydrochloride wherein the tablets exhibit enhanced storage stability properties. | 2013-08-29 |
20130221562 | Apparatuses, Systems, and Associated Methods for Forming Porous Masses for Smoke Filter - A system for producing porous masses may include a mold cavity disposed along the material path, at least one hopper before at least a portion of the mold cavity for feeding a matrix material to the material path, a heat source in thermal communication with at least a first portion of the material path, and a cutter disposed along the material path after the first portion of the material path. | 2013-08-29 |
20130221563 | Apparatuses, Systems, and Associated Methods for Forming Porous Masses for Smoke Filter - A system for producing porous masses may include a mold cavity disposed along the material path, at least one hopper before at least a portion of the mold cavity for feeding a matrix material to the material path, a heat source in thermal communication with at least a first portion of the material path, and a cutter disposed along the material path after the first portion of the material path. | 2013-08-29 |
20130221564 | FILM STRUCTURE WIHT HIGH OXYGEN BARRIER PROPERTIES AND METHOD OF MANUFACTURING SUCH A FILM STRUCTURE - Film structure of at least five layers, two outer layers ( | 2013-08-29 |
20130221565 | PROCESS FOR PRODUCING THERMOPLASTIC RESIN FILM - According to a process for producing a thermoplastic resin film according to one aspect of the present invention, a molten resin, while the molten resin is discharged from a die and thereafter lands onto a cooling roller, is uniformly heated in a direction of a flow by a heater. Thereby, a thermoplastic resin film having very slight thickness unevenness in a longitudinal direction can be formed. Moreover, according to the process for producing a thermoplastic resin film, heating by the heater can reduce a viscosity of the molten resin at the time of landing, and can suppress generation of retardation at the time of landing. | 2013-08-29 |
20130221566 | METHOD AND APPARATUS FOR SKY-LINE POTTING - The present disclosure is directed to a method for potting an electrical module. In one embodiment, the method includes placing the electrical component in a potting mold, wherein the potting mold comprises an interior topology that matches a topology of one or more components of the electrical module, filling the potting mold with a potting compound and curing the potting compound over the electrical module. | 2013-08-29 |
20130221567 | Method for Manufacturing a Fibre-Containing Element and Element Produced by that Method - A method for manufacturing a fibre-containing element, said method comprising the steps of: providing fibres, at least some of which are first fibres, such as mineral fibres, polymer fibres, cellulose fibres, or other types of fibres, in an amount of from 3 to 98 wt % of the total weight of starting materials in the form of a collected web, providing a binder in an amount of from 1 to 30 wt % of the total weight of starting materials, subjecting the collected web of fibres to a disentanglement process, suspending the fibres in a primary air flow, mixing the binder with the fibres before, during or after the disentanglement process, providing a filler, such as a fire retardant, in an amount of 1 to 55 wt % of the total weight of starting materials, adding the filler at any suitable step of the method, such as before, during or after the dientanglement process, collecting the mixture of fibres, filler and binder and pressing and curing the mixture to provide a consolidated composite with a density of from 120 kg/m | 2013-08-29 |
20130221568 | METHOD AND APPARATUS FOR MANUFACTURING FIBER-REINFORCED BASE MATERIAL - It is intended to provide a method and an apparatus for manufacturing a fiber-reinforced base material, which is capable of manufacturing a fiber-reinforced base material of high quality while preventing generation of defects such as wrinkles during stacking of the base material sheet. The method for manufacturing the fiber-reinforced base material formed by stacking a base material sheet including a reinforcement fiber onto a mold having a double-curved surface shape, includes steps of: supplying the base material sheet onto the mold from a base material roll while applying distribution varying in a width direction (X direction) to a length of the base material sheet in a sheet-supplying direction of the base material sheet (Y direction) in correspondence with the double-curved surface shape of the mold; and applying pressure to the base material sheet in contact with the mold. | 2013-08-29 |
20130221569 | Injection Molding Method for Modifying a Surface of an Apolar Polymer Molded Body, and Multi-layer Foil Suitable for Said Method - The invention relates to an injection moulding method for modifying a surface of a polymer moulded part ( | 2013-08-29 |
20130221570 | METHOD OF MANUFACTURING A COMPOSITE PART BY INJECTING RESIN INTO A TOOL, AND DEVICE COMPRISING THIS TOOL - The resin that will fill a cavity for a part to be moulded and will be polymerised in it, does not reach the cavity until having circulated in a long conduit, formed on the parting line of the tool containing the cavity, so as to take advantage of the thermal inertia of the tool to heat the resin to the required stable temperature, instead of heating it in a less stable manner in the thermally insulated pipes external to the tool. Temperature variations resulting either from heat losses in the pipes external to the tool, or from overheating due to excessively fast polymerisation are thus avoided. | 2013-08-29 |
20130221571 | PATTERN FORMING DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A pattern forming device uses a template having a plurality of protrusions and recesses configured to imprint a reverse image thereof on a resin on a substrate. The pattern forming device has a holding part, a stage, a driving part, and a curing part. The holding part includes a contact portion having a friction reducing contact portion, which is configured to engage against the template to hold the template. The stage carries the substrate. The driving part is configured to move at least one of the holding part and the stage to have the pattern in contact with the resin. The curing part cures the resin. The contact portion has a main body portion configured to move forward/backward with respect to the template and a tip portion arranged on the main body portion. | 2013-08-29 |
20130221572 | High Thermal Conductivity Co-Injection Molding System - A low constant pressure co-injection molding machine forms molded parts by injecting molten thermoplastic material into a mold cavity at low constant pressures of 6,000 psi and lower. As a result, the low constant pressure injection molding machine includes a mold formed of easily machineable material that is less costly and faster to manufacture than typical injection molds. Co-injection of thin-walled parts having an L/T ratio>100, with embedded sustainable materials, such as polylactic acid (PLA), starch, post-consumer recyclables (PCR), and post-industrial recyclables (PIR) isolated from surfaces by barrier layers of leach-resistant material having a thickness less than 0.5 mm, is possible. | 2013-08-29 |
20130221573 | Texturing a Mobile Electronic Device Part - A part for a mobile electronic device is molded by providing a three dimensionally textured film in a mold. A moldable polymer is provided in the mold over the film and molded into a shape of the part. The part is removed from the mold, and the three dimensionally textured film is removed from the part. | 2013-08-29 |
20130221574 | PLASTIC INJECTION MOULD WITH INNER AIR EXTRACTION AND EXTRACTION METHOD FOR EXTRACTING THE AIR CARRIED OUT WITH SAID MOULD - A plastic injection mold which allows extracting the air from inside it during the injection process, and an extraction method, where the mold includes closing means, one or more injection cavities provided with at least one injection nozzle for introducing the hot material in a liquid state and at least one ejector device formed by a housing for an ejector pin responsible for extracting the part already molded, where an air duct connected to a vacuum pump or a suction device intercepts the housings of the ejector pins causing a suction of the air from inside the mold. | 2013-08-29 |
20130221575 | Method for Operating a High Productivity Injection Molding Machine - A high productivity injection molding method and machine that includes a mold having a first mold part and a second mold part, at least one of the first mold parts and the second mold parts being formed from a material having an average thermal conductivity of 51.9 W/m-° C. or greater, the high productivity injection molding machine having a useful life of more than 1 million injection molding cycles. | 2013-08-29 |
20130221576 | Method and Apparatus for Forming a Plastic Work Piece - The present invention provides a method of forming a thermoplastic work piece having a deformation temperature. The method comprises locally heating a desired portion, such as a crease line, of the work piece with a stream of a heated fluid, such as a gas, having a temperature at least as high as the plastic deformation temperature of the work piece, and forming the work piece at the heated portion. An apparatus for forming a thermoplastic work piece having a deformation temperature is also provided. The apparatus comprises a heated fluid nozzle operable to deliver a stream of a heated fluid, such as a gas, to a desired portion, such as a crease line, on the work piece to heat the portion to a deformation temperature, and a forming tool for forming the work piece at the heated portion. | 2013-08-29 |
20130221577 | System And Method For Making Golf Balls - A system and method for making golf balls is disclosed. The system may include laser cutting dimples into a golf ball cover layer. Laser cutting may also be used to add texture to the surface of a golf ball. Laser cutting dimples may provide flexibility in quickly creating different shapes, sizes, and patterns of dimples. Thus, during golf ball testing, a certain pattern of dimples may be made, tested, and then quickly adjusted. For example, the dimples may be adjusted by cutting away more cover material to make the dimples larger, deeper, and/or in a different shape. After further testing, the golf ball dimples may be adjusted again multiple times. | 2013-08-29 |
20130221578 | Tray Assemblies and Methods For Manufacturing Ceramic Articles - Tray assemblies and methods for manufacturing ceramic articles are provided. In one embodiment, a tray assembly includes a tray body having a supporting surface operable to support a ceramic article for passage through a microwave drying apparatus during a microwave drying process and a microwave coupling cover associated with the tray body. The microwave coupling cover envelopes at least a portion of the ceramic article during the microwave drying process. The microwave coupling cover has a dielectric property such that a greater percentage of microwave energy is coupled into the ceramic article with the microwave coupling cover present during the microwave drying process than with the microwave coupling cover not present. Methods may include rotating the ceramic article when the ceramic article is about 40%-60 dry. | 2013-08-29 |
20130221579 | PROCESS FOR FORMING A CONTAINER BY SELECTIVE LASER HEATING AND FREE BLOWING - Method of manufacturing a container ( | 2013-08-29 |
20130221580 | System and Method of Manufacturing a Composite Structure in a Closed Cavity Mold - The present application relates to a method and system that can be utilized to manufacturing composite structures in a closed cavity mold. The tool system includes a closed cavity tool with spring members that when in compression apply pressure to a preform located within the closed cavity mold. During a curing cycle, the spring members provide substantially constant pressure to the preform, thereby preventing voids and porosity in the cured composite structure. Further, the substantially constant pressure, provided by the spring members, acts to more effectively conform the preform to the geometry defined by a void in the closed cavity mold during the curing cycle. | 2013-08-29 |