33rd week of 2010 patent applcation highlights part 36 |
Patent application number | Title | Published |
20100207036 | OPTICAL IMAGING DEVICE - The invention concerns an optical imaging device for a human or animal body, including: an optical sensing system, a drive system of at least one light collector from the optical sensing system, permitting modification of at least the position and/or direction, and a control system from the drive system, arranged so as to lead the light collector from the optical sensing system to at least one observation situation of at least one chosen region of the body to be examined, based on data concerning its topology. | 2010-08-19 |
20100207043 | Noise reducing valve for toilet systems - Providing a noise reducing water valve, intended to be installed inside the bottom piece of an existing flush valve installed in a toilet as a retrofit or built-in inside a new flush valve, in order to reduce and control the unnecessary and excessive water flow present in a noisy toilet. | 2010-08-19 |
20100207047 | GAS SHUTOFF VALVE - A restriction plate is arranged at a position that is apart from a female screw portion by a distance shorter than a length of a portion of a male screw portion of an operation screw, which is screwed into a female screw portion of a plug body housing, along the axial direction in the valve-closed state. Therefore, when the operation screw is unscrewed, the operation screw contacts the restriction plate before the operation screw is completely unscrewed from the plug body housing. | 2010-08-19 |
20100207048 | SUCK BACK VALVE SYSTEM AND VALVE-CLOSING-OPERATION CONTROL METHOD FOR THE SAME - There is provided a suck back valve system in which problems in the suck back function are resolved. In a suck back system including an integral-type suck back valve in which an on/off valve that performs opening and closing operations by a first pneumatic actuator has a suck back function of preventing liquid dripping by means of a diaphragm that moves with the closing operation and a protective on/off valve provided at the upstream side adjacent to the integral-type suck back valve as a measure against malfunction in the integral-type suck back valve and performing opening and closing operations by a second pneumatic actuator, an opening and closing control unit is provided that, during the fully closing operation of the integral-type suck back valve, completes the fully closing operation of the protective on/off valve earlier than full closing of the integral-type suck back valve. | 2010-08-19 |
20100207055 | METAL-GRAPHITE COMPOSITE MATERIAL HAVING HIGH THERMAL CONDUCTIVITY AND PRODUCTION METHOD THEREFOR - The present invention provides a metal-graphite composite material favorable to two-dimensional diffusion of heat and having a high thermal conductivity in two axial directions, and a production method therefor. The metal-graphite composite material of the present invention includes: 20 to 80% by volume of a scaly graphite powder; and a matrix selected from the group consisting of copper, aluminium and alloys thereof, wherein the scaly graphite powder in which a normal vector to a scaly surface thereof is tilted at 20° or higher with respect to a normal vector to a readily heat-conducting surface of the metal-graphite composite material is 15% or less relative to a whole amount of the scaly graphite powder, and the metal-graphite composite material has a relative density of 95% or higher. | 2010-08-19 |
20100207057 | POLISHING COMPOSITION - An object of one embodiment of the present invention is to provide a polishing composition which suppresses generation of recessing and dishing and includes a higher polishing rate. The polishing composition of an embodiment of the invention is a polishing composition suitable for a metal film, particularly a copper (CU) film, and contains ammonia, hydrogen peroxide, an amino acid and an anionic surfactant, the remainder being water. By containing those, the polishing composition can suppress generation of recessing and dishing when particularly used in the second step polishing. | 2010-08-19 |
20100207058 | POLISHING COMPOSITION - At least one embodiment of the invention provides a polishing composition that can achieve high polishing rate and as well can improve flatness. The polishing composition of at least one embodiment of the invention is a polishing composition suitable for a metal film, particularly a copper (Cu) film, and contains a basic compound containing an ammonium group, alkyl naphthalene sulfonate and hydrogen peroxide, the remainder being water. The pH of the polishing composition is within a range of 8 to 12. By containing those, a polishing composition that can achieve high polishing rate and improve flatness can be realized. | 2010-08-19 |
20100207067 | PROCESS FOR LABELLING MATERIALS BASED ON ORGANIC THERMOPLASTIC OR THERMOSETTING POLYMER MATRICES - Process for labelling a material based on at least one organic thermoplastic or thermosetting polymer matrix comprising a step that consists in incorporating therein, by dispersion during its manufacture or its formation, at least one compound based on at least one photoluminescent rare earth in a concentration that renders this compound detectable under UV irradiation, said compound being a coordination polymer that is in the form of a crystallite obtained by reaction of at least one photoluminescent rare-earth ion with at least one unsaturated organic ligand. | 2010-08-19 |
20100207070 | HYDROCARBON-REFORMING CATALYST AND PROCESS FOR PRODUCING SYNTHESIS GAS USING THE SAME - The hydrocarbon-reforming catalyst comprising a composite oxide having a composition represented by the following formula (I) in which Co, Ni and M are dispersed in the composite oxide and a process for producing a synthesis gas by using the catalyst are provided. | 2010-08-19 |
20100207076 | Conductive tin oxide sol and process for producing same - There is provided a conductive tin oxide sol having a high transparency, and a process for producing the sol, a coating composition by use of the sol and a material coated with the coating composition. The conductive tin oxide sol containing phosphorus-doped conductive tin oxide colloidal particles (A), wherein a sol prepared so as to have the colloidal particles (A) in a concentration of 10 mass % in the sol has a transmittance of 30% or more at a wavelength of 600 nm in an optical path length of 10 mm. The particle diameter of the conductive tin oxide sol by observation with transmission electron microscope is 2 to 25 nm. The molar ratio of the doped phosphorus (P) to the tin oxide (SnO | 2010-08-19 |
20100207080 | Staple remover - The staple remover is a device that effectively removes staples, especially staples that have already been partially removed. The device includes top and bottom jaws that are pivotally connected in pliers-like fashion. A conventional spring biases the jaws apart. Each jaw is provided with a toothed or serrated-like inner surface. The outer surface of each jaw is padded to enhance ergonomic dexterity and comfort. An elongate prong extends from the front surface of the bottom jaw. | 2010-08-19 |
20100207083 | AMUSEMENT RIDE INSTALLATION - This invention relates to an amusement ride installation, comprising at least one passenger carrier ( | 2010-08-19 |
20100207085 | MOTORCYCLE LIFT - A motorcycle lift for use on a flat surface to lift and support a motorcycle, the lift comprising: a frame including a first longitudinal side, a second longitudinal side, a first longitudinal track, and a second longitudinal track; a first support and a second support disposable in a first position with a first support primary arm and a second support primary arm at an angle with the first longitudinal side and the second longitudinal side, respectively, the first support and the second support further disposable in a second position foldable on and resting parallel to the first longitudinal track and the second longitudinal track, respectively; a lift arm; a jack; and a first stabilizing arm assembly, a second stabilizing arm assembly, a third stabilizing arm assembly, and a fourth stabilizing arm assembly operative to stabilize the motorcycle lift. | 2010-08-19 |
20100207089 | SUPPORT MEMBER FOR SUPPORTING A RAIL - A support member, such as a fence post, and method for making the same are provided. In at least one specific embodiment, the support member includes an elongated body having at least one substantially flat side, and at least one longitudinal groove at least partially disposed within the substantially flat side. | 2010-08-19 |
20100207092 | PHASE CHANGE MEMORY DEVICE SWITCHED BY SCHOTTKY DIODES AND METHOD FOR MANUFACTURING THE SAME - A phase change memory device and a method for manufacturing the same is presented. The phase change memory device includes a semiconductor substrate, a bit line, switching elements, bottom electrodes, a phase change layer, and top electrodes. The semiconductor substrate has a cell area and a peripheral area. The bit line is formed on the semiconductor substrate. The switching elements are formed on portions of the bit line in the cell area. The bottom electrodes are formed on the switching elements. The phase change layer is formed on the bottom electrodes. The top electrodes are formed on the phase change layer. | 2010-08-19 |
20100207097 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A nitride semiconductor light emitting device includes a substrate, a first conductivity type nitride semiconductor layer disposed on the substrate and including a plurality of V-pits placed in a top surface thereof, a silicon compound formed in the vertex region of each of the V-pits, an active layer disposed on the first conductivity type nitride semiconductor layer and including depressions conforming to the shape of the plurality of V-pits, and a second conductivity type nitride semiconductor layer disposed on the active layer. The nitride semiconductor light emitting device, when receiving static electricity achieves high resistance to electrostatic discharge (ESD) since current is concentrated in the V-pits and the silicon compound placed on dislocations caused by lattice defects. | 2010-08-19 |
20100207099 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATING METHOD THEREOF - A nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed on the first nitride semiconductor layer and including at least one barrier layer grown under hydrogen atmosphere of a high temperature; and a second nitride semi conductor layer formed on the active layer, and a method of fabricating the same are provided. According to the light emitting device and method of fabricating the same, the light power of the light emitting device is increased and the operation reliability is enhanced. | 2010-08-19 |
20100207109 | BUFFER BILAYERS FOR ELECTRONIC DEVICES - The present invention relates to buffer bilayers, and their use in electronic devices. The bilayer has a first layer including (i) at least one electrically conductive polymer doped with at least one non-fluorinated polymeric acid and (ii) at least one highly-fluorinated acid polymer. The bilayer has a second layer which is a reacted layer from a metal which can be one or more transition metals, Group 13 metals, Group 14 metals, or lanthanide metals. | 2010-08-19 |
20100207110 | ORGANIC EL DEVICE - An organic EL device includes: an anode for injecting holes; a phosphorescent-emitting layer; a fluorescent-emitting layer; and a cathode for injecting electrons. The phosphorescent-emitting layer contains a phosphorescent host and a phosphorescent dopant for phosphorescent emission. The fluorescent-emitting layer contains a fluorescent host and a fluorescent dopant for fluorescent emission. The fluorescent host is at least one of an asymmetric anthracene derivative represented by a formula (1) below and a pyrene derivative represented by a formula (2) below. | 2010-08-19 |
20100207111 | PROCESS FOR PRODUCING ORGANIC SEMICONDUCTOR ELEMENT, ORGANIC SEMICONDUCTOR ELEMENT, AND ORGANIC SEMICONDUCTOR DEVICE - An object of the present invention is to provide a method for producing an organic semiconductor element allowing depression of electrical properties of active layer to be prevented, moreover allowing an active layer patterned to have a satisfactory pattern shape to be formed. In order to achieve the above object, the method for producing an organic semiconductor element of the present invention has the step of laminating a layered body resulting from lamination of a support film and the active layer to an element substrate on which the active layer will be disposed so that the active layer of the layered body will be in contact with the element substrate, the step of forming a mask having a prescribed pattern shape on the support film's surface located on the side opposite to the active layer, and the step of patterning the active layer by removing the layered body located in a region where the mask has not been formed. | 2010-08-19 |
20100207113 | THIN FILM ACTIVE ELEMENT, ORGANIC LIGHT EMITTING DEVICE, DISPLAY DEVICE, ELECTRONIC DEVICE, AND MANUFACTURING METHOD OF THIN FILM ACTIVE ELEMENT - There is provided a thin film active element including a light-permeable substrate, a light-shielding source/drain electrode formed on the substrate, a light-permeable source/drain electrode formed on a plane surface to which the light-shielding source/drain electrode belongs, and disposed to have a gap interposed between the light-shielding source/drain electrode and the light-permeable source/drain electrode, a channel layer formed in the gap between the light-shielding source/drain electrode and the light-permeable source/drain electrode, and a gate electrode applying an electric field to the channel layer formed in the gap. | 2010-08-19 |
20100207117 | TRANSISTOR, SEMICONDUCTOR DEVICE INCLUDING THE TRANSISTOR, AND MANUFACTURING METHOD OF THE TRANSISTOR AND THE SEMICONDUCTOR DEVICE - An object is to suppress deterioration in electric characteristics in a transistor including an oxide semiconductor layer or a semiconductor device including the transistor. In a transistor in which a channel layer is formed using an oxide semiconductor, a silicon layer is provided in contact with a surface of the oxide semiconductor layer, an impurity semiconductor layer is provided over the silicon layer, and a source electrode layer and a drain electrode layer are provided to be electrically connected to the impurity semiconductor layer. | 2010-08-19 |
20100207118 | TRANSISTOR, SEMICONDUCTOR DEVICE INCLUDING THE TRANSISTOR, AND MANUFACTURING METHOD OF THE TRANSISTOR AND THE SEMICONDUCTOR DEVICE - To suppress deterioration in electrical characteristics in a transistor including an oxide semiconductor layer or a semiconductor device including the transistor. In a transistor in which a channel layer is formed using an oxide semiconductor, a silicon layer is provided in contact with a surface of the oxide semiconductor layer. Further, the silicon layer is provided in contact with at least a region of the oxide semiconductor layer, in which a channel is formed, and a source electrode layer and a drain electrode layer are provided in contact with regions of the oxide semiconductor layer, over which the silicon layer is not provided. | 2010-08-19 |
20100207125 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device according to the present invention includes: a silicon carbide substrate ( | 2010-08-19 |
20100207136 | SAPPHIRE SUBSTRATE, NITRIDE SEMICONDUCTOR LUMINESCENT ELEMENT USING THE SAPPHIRE SUBSTRATE, AND METHOD FOR MANUFACTURING THE NITRIDE SEMICONDUCTOR LUMINESCENT ELEMENT - The present invention provides an inexpensive substrate which can realize m-plane growth of a crystal by vapor phase growth. In a sapphire substrate, an off-angle plane slanted from an m-plane by a predetermined very small angle is prepared as a growth surface, which is a template of the crystal, at the time of growing a crystal of GaN or the like, by a polishing process to prepare a stepwise substrate comprising steps and terraces. According to the above-described configuration, even if an inexpensive sapphire substrate, which normally does not form an m-plane (nonpolar plane) GaN film, is used as a substrate for crystal growth, the following advantages can be attained. Specifically, c-axis growth can be carried out from the plane of each step as an a-plane on the terrace by vapor phase growth, which is advantageous in the fabrication of a device, in order to grow an excellent GaN single crystal which has been epitaxially grown so that the m-plane is opposite to the surplane of the terrace, and, in the mean time, the steps become integrated (fused), whereby a device can be fabricated from a substrate of a GaN single crystal having no significant threading dislocation. Further, the use of the m-plane can advantageously eliminate the influence of piezo electric fields. | 2010-08-19 |
20100207141 | LIGHT EMITTING DEVICE - A light emitting device (LED) is provided. The LED comprises a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. The active layer is on the first conductivity type semiconductor layer. The second conductivity type semiconductor layer is on at least one side of the active layer and the first conductivity type semiconductor layer, and on the active layer. | 2010-08-19 |
20100207142 | LIGHT-EMITTING DIODE LIGHT SOURCE MODULE - A light-emitting diode (LED) light source module is described, comprising: a heat conduction substrate, wherein a surface of the heat conduction substrate includes a plurality of recesses; a plurality of light-emitting diode chips respectively disposed in the recesses; an insulation layer disposed on the surface of the heat conduction substrate outside of the recesses; an electric conduction layer disposed on the insulation layer, wherein the light-emitting diode chips are electrically connected to the electric conduction layer; and an encapsulation layer covering the light-emitting diode chips, the electric conduction layer and the insulation layer. | 2010-08-19 |
20100207151 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer below the first conductive semiconductor layer, and a second conductive semiconductor layer below the active layer; a channel layer below the light emitting structure, in which an inner portion of the channel layer is disposed along an outer peripheral portion of the light emitting structure and an outer portion of the channel layer extends out of the light emitting structure; and a second electrode layer below the light emitting structure. | 2010-08-19 |
20100207152 | LIGHTING EMITTING DEVICE PACKAGE - Disclosed is a light emitting device package. The light emitting device package includes a package body including a cavity formed therein with first and second via holes, a first electrode extending from one side of the cavity to one side of a rear surface of the package body through the first via hole, a second electrode extending from an opposite side of the cavity to an opposite side of the rear surface of the package body through the second via hole, a light emitting device connected with the first and second electrodes, an insulating layer insulating the first and second electrodes from the package body, and a reflective layer disposed on the insulating layer having a structure in which first and second media having different refractive indexes are alternately stacked on each other. | 2010-08-19 |
20100207153 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE INCLUDING THE SAME - A semiconductor light emitting device is provided. The semiconductor light emitting device comprises a plurality of compound semiconductor layers, an electrode layer, a conductive support member and a first buffer member. The compound semiconductor layers comprise a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. The electrode layer is disposed under the plurality of compound semiconductor layers. The conductive support member is disposed under the electrode layer. The first buffer member is embedded to be spaced apart, in the conductive support member. | 2010-08-19 |
20100207157 | LED ASSEMBLY HAVING MAXIMUM METAL SUPPORT FOR LASER LIFT-OFF OF GROWTH SUBSTRATE - Described is a process for forming an LED structure using a laser lift-off process to remove the growth substrate (e.g., sapphire) after the LED die is bonded to a submount. The underside of the LED die has formed on it anode and cathode electrodes that are substantially in the same plane, where the electrodes cover at least 85% of the back surface of the LED structure. The submount has a corresponding layout of anode and cathode electrodes substantially in the same plane. The LED die electrodes and submount electrodes are ultrasonically welded together such that virtually the entire surface of the LED die is supported by the electrodes and submount. Other bonding techniques may also be used. No underfill is used. The growth substrate, forming the top of the LED structure, is then removed from the LED layers using a laser lift-off process. The extremely high pressures created during the laser lift-off process do not damage the LED layers due to the large area support of the LED layers by the electrodes and submount. | 2010-08-19 |
20100207159 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a plurality of compound semiconductor layers, a second electrode layer below the light emitting structure, a channel layer between the light emitting structure and an edge area of the second electrode layer, a buffer layer on the channel layer, and a passivation layer on the buffer layer. | 2010-08-19 |
20100207166 | Gallium Nitride Heterojunction Schottky Diode - A gallium nitride based semiconductor diode includes a substrate, a GaN layer formed on the substrate, an AlGaN layer formed on the GaN layer where the GaN layer and the AlGaN layer forms a cathode region of the diode, a metal layer formed on the AlGaN layer forming a Schottky junction therewith where the metal layer forms an anode electrode of the diode, and a high barrier region formed in the top surface of the AlGaN layer and positioned under an edge of the metal layer. The high barrier region has a higher bandgap energy than the AlGaN layer or being more resistive than the AlGaN layer. | 2010-08-19 |
20100207170 | IMAGE SENSOR HAVING 3-DIMENSIONAL TRANSFER TRANSISTOR AND ITS METHOD OF MANUFACTURE - In an embodiment, an image sensor includes an isolation layer disposed in a semiconductor substrate to define a first active region and a second active region extending from the first active region. A photodiode is disposed in a portion of the first active region. A floating diffusion region is provided in the second active region at a position spaced apart from the photodiode. A transfer gate electrode is disposed on the second active region between the photodiode and the floating diffusion region. The transfer gate electrode is disposed to cover both sidewalls and an upper portion of the second active region. The transfer gate electrode has a region extending onto the first active region and overlapping the photodiode. The photodiode has a protrusion into the second active region at the portion adjacent to the transfer gate electrode. A deep n-impurity region of the photodiode extends in the protrusion. | 2010-08-19 |
20100207173 | ASYMMETRIC JUNCTION FIELD EFFECT TRANSISTOR - A junction field effect transistor (JFET) in a semiconductor substrate includes a source region, a drain region, a channel region, an upper gate region, and a lower gate region. The lower gate region is electrically connected to the upper gate region. The upper and lower gate regions control the current flow through the channel region. By performing an ion implantation step that extends the thickness of the source region to a depth greater than the thickness of the drain region, an asymmetric JFET is formed. The extension of depth of the source region relative to the depth of the drain region reduces the length for minority charge carriers to travel through the channel region, reduces the on-resistance of the JFET, and increases the on-current of the JFET, thereby enhancing the overall performance of the JFET without decreasing the allowable Vds or dramatically increasing Voff/Vpinch. | 2010-08-19 |
20100207174 | SEMINCONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF - The invention provides a method for forming a semiconductor structure. A plurality of first type well regions is formed in the first type substrate. A plurality of second type well regions and a plurality of second type bar doped regions are formed in the first type substrate by a doping process using a mask. The second type bar doped regions are diffused to form a second type continuous region by annealing. The second type continuous region is adjoined with the first type well regions. A second type dopant concentration of the second type continuous region is smaller than a second type dopant concentration of the second type bar doped regions. A second type source/drain region is formed in the second type well region. | 2010-08-19 |
20100207177 | METHOD FOR PRODUCING A COPPER CONTACT - A method for producing a contact through the pre-metal dielectric (PMD) layer of an integrated circuit, between the front end of line and the back end of line, and the device produced thereby are disclosed. The PMD layer includes oxygen. In one aspect, the method includes producing a hole in the PMD, depositing a conductive barrier layer at the bottom of the hole, depositing a CuMn alloy on the bottom and side walls of the hole, filling the remaining portion of the hole with Cu. The method further includes performing an anneal process to form a barrier on the side walls of the hole, wherein the barrier has an oxide including Mn. The method further includes performing a CMP process. | 2010-08-19 |
20100207183 | SRAM Cell with Asymmetrical Pass Gate - A method of controlling gate induced drain leakage current of a transistor is disclosed. The method includes forming a dielectric region ( | 2010-08-19 |
20100207185 | Nonvolatile Memory Device and Method of Manufacturing the Same - A nonvolatile memory device includes gate electrodes three dimensionally arranged on a semiconductor substrate, a semiconductor pattern extending from the semiconductor substrate and crossing sidewalls of the gate electrodes, a metal liner pattern formed between the semiconductor pattern and formed on a top surface and a bottom surface of each of the gate electrodes, and a charge storage layer formed between the semiconductor pattern and the metal liner pattern. | 2010-08-19 |
20100207194 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - A nonvolatile semiconductor memory device includes: a semiconductor substrate; a stacked body provided on the semiconductor substrate, the stacked body having electrode films and insulating films being alternately stacked; a first and second semiconductor pillars; and a first and second charge storage layers. The first and second semiconductor pillars are provided inside a through hole penetrating through the stacked body in a stacking direction of the stacked body. The through hole has a cross section of an oblate circle, when cutting in a direction perpendicular to the stacking direction. The first and second semiconductor pillars face each other in a major axis direction of the first oblate circle. The first and second semiconductor pillars extend in the stacking direction. The first and second charge storage layers are provided between the electrode film and the first and second semiconductor pillars, respectively. | 2010-08-19 |
20100207199 | SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR - The method includes the steps of: forming a planar semiconductor layer on an oxide film formed on a substrate and then forming a pillar-shaped first-conductive-type semiconductor layer on the planar semiconductor layer; forming a second-conductive-type semiconductor layer in a portion of the planar semiconductor layer underneath the pillar-shaped first-conductive-type semiconductor layer; forming a gate dielectric film and a gate electrode made of a metal, around the pillar-shaped first-conductive-type semiconductor layer; forming a sidewall-shaped dielectric film on an upper region of a sidewall of the pillar-shaped first-conductive-type semiconductor layer and in contact with a top of the gate electrode; forming a sidewall-shaped dielectric film on a sidewall of the gate electrode; forming a second-conductive-type semiconductor layer in an upper portion of the pillar-shaped first-conductive-type semiconductor layer. | 2010-08-19 |
20100207205 | Structures and Methods for Improving Trench-Shielded Semiconductor Devices and Schottky Barrier Rectifier Devices - Various structures and methods for improving the performance of trench-shielded power semiconductor devices and the like are described. | 2010-08-19 |
20100207206 | TRANSISTOR - A transistor has a cell array with two or more transistor cells, a temperature sensor, which is integrated in the cell array or is adjacent to the cell array, and an isolation structure. The isolation structure isolates the temperature sensor from the cell array, and has an isolation trench, which is arranged between the cell array and the temperature sensor. The distance between the temperature sensor and the active transistor cell that is closest to the temperature sensor corresponds approximately to the pitch between active transistor cells within the cell array. | 2010-08-19 |
20100207215 | Semiconductor Device and Method of Producing the Same - A semiconductor device includes a semiconductor substrate; an N-channel type transistor forming region formed on the semiconductor substrate; a P-channel type transistor forming region formed on the semiconductor substrate and arranged adjacent to the N-channel type transistor forming region; and a gate electrode formed on the semiconductor substrate over the N-channel type transistor forming region and the P-channel type transistor forming region. The gate electrode has a boundary inclusion portion formed in a first region including a boundary line between the N-channel type transistor forming region and the P-channel type transistor forming region and a boundary exclusion portion formed in a second region not including the boundary line. The gate electrode includes a conductive silicon layer and a metal silicide layer formed on the conductive silicon layer. The metal silicide layer has a first thickness in the boundary inclusion portion and a second thickness from the first thickness in the boundary exclusion portion. | 2010-08-19 |
20100207220 | ULTRAFAST MAGNETIC RECORDING ELEMENT AND NONVOLATILE MAGNETIC RANDOM ACCESS MEMORY USING THE MAGNETIC RECORDING ELEMENT - Provided are an ultrafast magnetic recording element and a nonvolatile magnetic random access memory using the same. The magnetic recording element includes a read electrode, a magnetic pinned layer formed on the read electrode, and an insulating layer or a conductive layer formed on the magnetic pinned layer. The magnetic recording element includes a magnetic free layer formed on the insulating layer or the conductive layer, in which a magnetic vortex is formed, and a plurality of drive electrodes applying a current or magnetic field to the magnetic free layer. Alternatively, the magnetic recording element includes a magnetic free layer in which a magnetic vortex is formed, a plurality of drive electrodes applying a current or a magnetic field to the magnetic free layer, and a read line disposed around the magnetic free layer. Herein, a current generated by a voltage induced by the movement of a magnetic vortex core flows through the read line. According to the magnetic recording elements, the magnetic recording element with a simple structure can be realized using a magnetic layer with a magnetic vortex formed, and the magnetic recording element can be accurately driven with low power using a plurality of drive electrodes. | 2010-08-19 |
20100207227 | Electronic Device and Method of Manufacturing Same - This application relates to a method of manufacturing a semiconductor device comprising providing a semiconductor wafer with the semiconductor wafer defining a first main face and a second main face opposite to the first main face; forming trenches in the first main face of the semiconductor wafer; forming a dielectric layer over the first main face and in the trenches; thinning the semiconductor wafer by removing semiconductor material from the second main face of the semiconductor wafer after the forming of the dielectric layer; and singulating at least one semiconductor chip from the semiconductor wafer along lines defined by the trenches. | 2010-08-19 |
20100207228 | SOLID-STATE IMAGING DEVICE AND METHOD FOR FABRICATING THE SAME - A solid-state imaging device comprises an imaging region, a peripheral circuit region formed in an outer peripheral portion of the imaging region, a first conductivity type semiconductor substrate having the imaging region and the peripheral circuit region on a main surface thereof, a second conductivity type first semiconductor layer formed in the semiconductor substrate, a first conductivity type second semiconductor layer formed in first semiconductor layer, a through electrode formed in a through hole penetrating through the semiconductor substrate in a thickness direction of the semiconductor substrate, and a pad portion formed on the semiconductor substrate and connected to the through electrode. The through hole penetrates through a first conductivity type region of the semiconductor substrate. | 2010-08-19 |
20100207230 | METHOD TO OPTIMIZE SUBSTRATE THICKNESS FOR IMAGE SENSOR DEVICE - Provided is a method for fabricating an image sensor device that includes providing a substrate having a front side and a back side; patterning a photoresist on the front side of the substrate to define an opening having a first width, the photoresist having a first thickness correlated to the first width; performing an implantation process through the opening using an implantation energy correlated to the first thickness thereby forming a first doped isolation feature; forming a light sensing feature adjacent to the first doped isolation feature, the light sensing feature having a second width; and thinning the substrate from the back side so that the substrate has a second thickness that does not exceed twice a depth of the first doped isolation feature. A pixel size is substantially equal to the first and second widths. | 2010-08-19 |
20100207233 | HIGH POWER DEVICE ISOLATION AND INTEGRATION - A structure and method of fabricating the structure. The structure including: a dielectric isolation in a semiconductor substrate, the dielectric isolation extending in a direction perpendicular to a top surface of the substrate into the substrate a first distance, the dielectric isolation surrounding a first region and a second region of the substrate, a top surface of the dielectric isolation coplanar with the top surface of the substrate; a dielectric region in the second region of the substrate; the dielectric region extending in the perpendicular direction into the substrate a second distance, the first distance greater than the second distance; and a first device in the first region and a second device in the second region, the first device different from the second device, the dielectric region isolating a first element of the second device from a second element of the second device. | 2010-08-19 |
20100207234 | SEMICONDUCTOR DEVICE AND WIRE BONDING METHOD - A semiconductor device ( | 2010-08-19 |
20100207243 | Semiconductor device and method of fabricating the same - A semiconductor device including a substrate; a bottom electrode on the substrate; a first dielectric layer on the bottom electrode, the first dielectric layer including a first metal oxide including at least one of Hf, Al, Zr, La, Ba, Sr, Ti, and Pb; a second dielectric layer on the first dielectric layer, the second dielectric layer including a second metal oxide including at least one of Hf, Al, Zr, La, Ba, Sr, Ti, and Pb, wherein the first metal oxide and the second metal oxide are different materials; a third dielectric layer on the second dielectric layer, the third dielectric layer including a metal carbon oxynitride; and an upper electrode on the third dielectric layer. | 2010-08-19 |
20100207245 | HIGHLY SCALABLE TRENCH CAPACITOR - An improved trench structure, and method for its fabrication are disclosed. Embodiments of the present invention provide a trench in which the collar portion has an air gap instead of a solid oxide collar. The air gap provides a lower dielectric constant. Embodiments of the present invention can therefore be used to make higher-performance devices (due to reduced parasitic leakage), or smaller devices, due to the ability to use a thinner collar to achieve the same performance as a thicker collar comprised only of oxide (with no air gap). Alternatively, a design choice can be made to achieve a combination of improved performance and reduced size, depending on the application. | 2010-08-19 |
20100207246 | METHOD OF MAKING AN MIM CAPACITOR AND MIM CAPACITOR STRUCTURE FORMED THEREBY - A method of forming an MIM capacitor having interdigitated capacitor plates. Metal and dielectric layers are alternately deposited in an opening in a layer of insulator material. After each deposition of the metal layer, the metal layer is removed at an angle from the side to form the capacitor plate. The side from which the metal layer is removed is alternated with every metal layer that is deposited. When all the capacitor plates have been formed, the remaining opening in the layer of insulator material is filled with dielectric material then planarized, followed by the formation of contacts with the capacitor plates. There is also an MIM capacitor structure having interdigitated capacitor plates. | 2010-08-19 |
20100207250 | Semiconductor Chip with Protective Scribe Structure - Apparatus and methods pertaining to die scribe structures are disclosed. In one aspect, a method of manufacturing is provided that includes fabricating an active region of a semiconductor die so that the active region has at least one corner. A scribe structure is fabricated around the active region so that the scribe structure includes at least one fillet. | 2010-08-19 |
20100207254 | Strained semiconductor materials, devices and methods therefore - Various applications are directed to a material stack having a strained active material therein. In connection with an embodiment, an active material (e.g. a semiconductor material) is at least initially and partially released from and suspended over a substrate, strained, and held in place. The release and suspension facilitates the application of strain to the semiconductor material. | 2010-08-19 |
20100207265 | Method of stiffening coreless package substrate - Embodiments of the present invention relate to a method of stiffening a semiconductor coreless package substrate to improve rigidity and resistance against warpage. An embodiment of the method comprises disposing a sacrificial mask on a plurality of contact pads on a second level interconnect (package-to-board interconnect) side of a coreless package substrate, forming a molded stiffener around the sacrificial mask without increasing the effective thickness of the substrate, and removing the sacrificial mask to form a plurality of cavities in the molded stiffener corresponding to the contact pads. Embodiments also include plating the surface of the contact pads and the sidewalls of the cavities in the molded cavities with an electrically conductive material. | 2010-08-19 |
20100207266 | CHIP PACKAGE STRUCTURE - A chip package structure including a substrate, a plurality of electrodes, a chip, and a plurality of bumps is provided. Each of the electrodes has a bottom portion and an annular element, wherein the bottom portion is disposed on the substrate, the annular element is disposed on the bottom portion, and the bottom portion and the annular element define a containing recess. The chip is disposed above the substrate and has an active surface facing the substrate and a plurality of pads disposed on the active surface. The bumps are respectively disposed on the pads and respectively inserted into the containing recesses. The melting point of the electrodes is higher than that of the bumps. A chip package method is also provided. | 2010-08-19 |
20100207267 | Integrated Circuit Package - Two integrated circuits having circuitry on one of their major surfaces are ground on their opposite major surfaces to reduce their thickness. The ground integrated circuits are then adhered together to form a composite body and placed in a chamber formed within a substrate such as a printed circuit board. Electrical connections are formed between contacts of the integrated circuits and contacts of the substrate. Components may be mounted on the outer surfaces of the substrate. | 2010-08-19 |
20100207268 | SEMICONDUCTOR PACKAGING SUBSTRATE IMPROVING CAPABILITY OF ELECTROSTATIC DISSIPATION - A semiconductor packaging substrate with improved capability of electrostatic dissipation comprises a dielectric layer, a plurality of leads, a plurality of first electrostatic guiding traces, a plurality of second electrostatic guiding traces and a solder mask. The first electrostatic guiding traces and the second electrostatic guiding traces are formed in pairs in a plurality of electrostatic dissipation regions on the dielectric layer, where each pair of the first and second electrostatic guiding traces are disposed in equal line spacing and are electrically isolated from each other. The solder mask partially covers the leads but exposes the first electrostatic guiding traces and the second electrostatic guiding traces. The first electrostatic guiding traces are connected to some of the leads to enhance protection against electrostatic discharge. | 2010-08-19 |
20100207281 | Semiconductor Chip with Reinforcement Layer - Various semiconductor chip reinforcement structures and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes providing a semiconductor chip that has a side and forming a polymer layer on the side. The polymer layer has a central portion and a first frame portion spatially separated from the central portion to define a first channel. | 2010-08-19 |
20100207282 | PRIMER RESIN FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - The present invention relates to a primer resin for semiconductor devices which comprises a polyamide resin represented by the following formula (1): | 2010-08-19 |
20100207285 | UNDERWATER AERATION DEVICE - A submersible aerator has an impeller which includes blades having partition walls which separate liquid passages and air passages and which is accommodated within a guide casing for rotation between a lower surface of an intermediate plate having an air suction opening and an upper surface of a suction cover having a liquid suction opening. The liquid passages and the air passages meet through communication portions at radially outer ends of rear-side blade partition walls. Intermediate blades are provided at radially outer ends of the liquid passages. A conical space is defined between the blade lower end surfaces and the suction cover upper surface such that the space, which is wide at a portion adjacent to the liquid suction opening, becomes narrower toward a radially outward region including guide vane tongues. A plurality of support legs and a plurality of straining projections are integrally formed on the lower surface of a peripheral portion of a bottom wall of the guide casing. Sloping surfaces are provided on the top wall upper surface between air-liquid discharge passages such that the sloping surfaces are inclined downward and increase in width in the radially outward direction. | 2010-08-19 |
20100207290 | BODY PANEL HAVING IMPROVED STIFFNESS AND METHOD OF MAKING - A damping system includes a base substrate, a constraining substrate and a non-foam damping layer between them. The base substrate has greater lateral dimensions than the constraining substrate. Consequently, the damping system is provided in a localized region of the base substrate. The damping system can be provided, for example, at a region of the base substrate where a longitudinal projection or moving linkage extends through an opening in the base substrate, such as a steering column through a dashboard panel. In this embodiment, a composite opening is provided through the damping system to accommodate the extending projection or linkage, and the damping system is effective to provide localized damping against vibrations due to the through-the-panel linkage. The damping system provides these benefits without increasing the overall thickness of the body part, and without providing damping and constraining layers across its entire lateral expanse, saving cost and weight. Methods of making such a damping system are also provided. | 2010-08-19 |
20100207292 | PROCESS FOR PRODUCING THERMOPLASTIC RESIN FILM - According to a process for producing a thermoplastic resin film according to one aspect of the present invention, a molten resin, while the molten resin is discharged from a die and thereafter lands onto a cooling roller, is uniformly heated in a direction of a flow by a heater. Thereby, a thermoplastic resin film having very slight thickness unevenness in a longitudinal direction can be formed. Moreover, according to the process for producing a thermoplastic resin film, heating by the heater can reduce a viscosity of the molten resin at the time of landing, and can suppress generation of retardation at the time of landing. | 2010-08-19 |
20100207295 | METHOD AND DEVICE FOR PRODUCING A MAGNETIC FIELD SENSOR - The invention relates to a method and a device for producing a magnetic field sensor ( | 2010-08-19 |
20100207298 | METHOD OF MAKING MOUNTING MATS FOR MOUNTING A POLLUTION CONTROL PANEL - The present invention relates to a method of making mounting mats for use in pollution control device. The method comprises the steps of: (i) supplying inorganic fibers through an inlet of a forming box having an open bottom positioned over a forming wire to form a mat of fibers on the forming wire, the forming box having a plurality of fiber separating rollers provided in at least one row in the housing between the inlet and housing bottom for breaking apart clumps of fibers and an endless belt screen; (ii) capturing clumps of fibers on a lower run of the endless belt beneath fiber separating rollers and above the forming wire; (iii) conveying captured clumps of fibers on the endless belt above fiber separating rollers to enable captured clumps to release from the belt and to contact and be broken apart by the rollers; (iv) transporting the mat of fibers out of the forming box by the forming wire; and (v) compressing the mat of fibers and restraining the mat of fibers in its compressed state thereby obtaining a mounting mat having a desired thickness suitable for mounting a pollution control element in the housing of a catalytic converter. | 2010-08-19 |
20100207308 | GAS SPRING ASSEMBLY AND METHOD - A gas spring assembly includes a first end member and a second end member. A flexible wall is secured between the first and second end members and at least partially defines a spring chamber therebetween. A fitting is supported on the first end member and is rotatable between a first position in which the fitting can be axially displaced and a second position in which the fitting is axially restrained. A method is also included. | 2010-08-19 |
20100207309 | REGENERATIVE DAMPING APPARATUS FOR VEHICLE - The present disclosure relates a regenerative damping apparatus for a vehicle utilizing an electric generator. An object of the present disclosure is to provide a separate regenerative damping apparatus for a vehicle in which a motion due to the vibration and/or the shock generated while the vehicle is driven is converted into a rotational motion, so as to provide a regenerative damping apparatus for the vehicle in which an electric generator is allowed to regenerate the energy which would be lost, thereby capable of reducing the noise to be generated and maintaining the driving comfort of the vehicle and/or the damping performance due to its shock absorber. In order to achieve the above object, the regenerative damping apparatus for a vehicle according to the present disclosure comprises a suspension link having one end mounted to a road wheel; and an electric generator fixed to a vehicle body with the other end of the suspension link is connected to the electric generator, thereby generating electricity by means of the rotation of the suspension link. | 2010-08-19 |
20100207315 | VALVE UNIT AND PAPER SHEET TAKEOUT DEVICE - A valve unit which circulates and blocks air has a first block connected to upstream suction tubes, a second block facing this first block and connected to downstream suction tubes, a shield plate disposed in a space S between the first block and the second block, and a motor which rotates this shield plate. The shield plate is provided with a connection hole which connects the upstream suction tube to the downstream suction tube, and a connection hole which connects the upstream suction tube to the downstream suction tube. | 2010-08-19 |
20100207316 | Dispensing Value Sheet Store - A store for storing value sheets such as banknotes in a stack and for dispensing the value notes from the stack. When more than a single value sheet is dispensed from the stack, the store returns all but one of the value sheets to the stack while moving the stack to reduce friction between the returning value sheet and the topmost value sheet of the stack. Means for securing the stack are also provided: a support for the stack is anchored and/or extra pressure is applied to the stack. The store includes means for indicating when the stack contains more than a predetermined number of value sheets and means for preventing securing of the store when the predetermined number of value sheets is exceeded. A value sheet store with part of a sidewall integrally formed with the lid. A value sheet store which includes a lid attached to a housing by a hinge located on an edge of the housing. Apparatus and a method for determining the height of a stack of value sheets. A shutter arrangement in a value sheet store which acts to block an aperture through which value sheets are dispensed. | 2010-08-19 |
20100207317 | PAPER-SHEET FEEDING DEVICE WITH KICKER ROLLER - A paper-sheet feeding device including a kicker roller configured to contact a forefront paper-sheet of a plurality of stacked paper-sheets and kick out the forefront paper-sheet; a feed roller to feed-out the paper-sheets to be kicked out by the kicker roller; and a press-fitting roller press-fit against the feed roller to provide a gate unit adapted to separate the paper-sheets to be fed by the feed roller, into one sheet. The kicker roller includes a base part and a high friction part formed in part of the outer circumference of the base part along the circumferential direction and configured to kick out the forefront paper-sheet. The feed roller includes a base part and a high friction part formed over the entire outer circumference of the base part and configured to contact the surface of the paper-sheet to be kicked out by the kicker roller to perform feed-out of the paper-sheet. | 2010-08-19 |
20100207321 | FEEDING DEVICE AND IMAGE RECORDING APPARATUS WITH THE FEEDING DEVICE - A feeding device includes a conveying roller that conveys a sheet downstream when the conveying roller rotates forward. A first guide member guides the conveyed sheet toward the conveying roller. A second guide member guides the sheet when the conveying roller rotates in reverse. A rotating member is positioned between the first guide member and the conveying roller, and has a support shaft and a pressing portion. The rotating member rotates about the support shaft between a first supported state where the rotating member is separated from the second guide member, and a second supported state where the rotating member is closer to the second guide member. In the first supported state, the sheet is conveyed from the first guide member to the conveying roller. A trailing end of the sheet moves toward the second guide member when the rotating member transitions from the first to the second supported state. | 2010-08-19 |
20100207330 | NONPENETRATING ARCHERY TARGET AND ARROW TIP - An arrow tip and target system, including a tip having a removable marking material integral with an end surface of the tip, and a target. An arrow for marking a target, including a shaft and a tip fixedly mounted thereon, the tip including a removable marking material integral with an end surface of the tip. A tip for attachment to an arrow, including a removable marking material integral with an end surface of the tip. A kit including a target, arrow tips, marking material, games, and rules for the games. A method of playing a game with an arrow tip and target system by attaching a tip including removable marking material to an arrow, launching the arrow towards a target according to the game being played, contacting the tip with the target, and removably marking the target. | 2010-08-19 |
20100207333 | SEAL MEMBER - Provided is a seal member, which is used in a heating furnace having an insertion port to which an end of a rod to be heated is inserted and seals between the insertion port and a surface of the rod inserted to the insertion port in an airtight manner, the seal member having: a plurality of seal chips in thin strips arranged along an inner surface of the insertion port in an airtight manner, each seal chip having one end held by the inner surface of the insertion port and the other end elongated towards inside the insertion port, where (a) when the rod is not inserted in the insertion port, each of the plurality of seal chips forms a slanting angle with respect to an insertion direction of the rod and (b) when the rod is inserted in the insertion port, the other end of each of the plurality of seal chips is pressed against a surface of the rod by means of elastic deformation. | 2010-08-19 |
20100207334 | MULTI-LAYERED COMPOSITE GASKET - A multi-layered composite gasket ( | 2010-08-19 |
20100207338 | BOBSLEIGH - The invention relates to a bobsled for traveling down a track that is covered with snow, ice, or a slide covering, and that has a bobsled body with a recessed seat, a support for the thighs, a grip projecting from the upper side of the bobsled, and a slide surface with runners on the underside, characterized in that the rear of the bobsled has a braking edge that extends over most of the width of the bobsled and that has a rounding on outer corners of the bobsled, and the runners extend longitudinally of the bobsled toward the braking edge, and the slide surface between the runners has a recess that widens toward the rear, or has a flat shape. | 2010-08-19 |
20100207341 | KNUCKLE AND METHOD OF MANUFACTURING KNUCKLE - The invention provides a knuckle and a method of manufacturing the knuckle that do not cause an increase in the number of man-hours. A knuckle according to the invention is equipped with a knuckle part for fixing a shock absorber constituting a suspension unit, a bearing for rotatably supporting a wheel, and a knuckle part for supporting the bearing. The knuckle part is constructed by being extruded in an axial direction of the shock absorber and the knuckle part is constructed by being extruded in an axial direction of the bearing. | 2010-08-19 |
20100207342 | Vehicle suspension system for stable squat magnitude responses - A wheel suspension system having under powered acceleration a stable squat magnitude response. | 2010-08-19 |
20100207352 | FOLDABLE DEVICE FOR CONNECTING A FRONT FORK TO A HANDLEBAR OF A BICYCLE - A foldable device is adapted to connect a front fork to a handlebar of a bicycle, and includes a linking member hingedly connected to lower and upper hingeable flanges about first and second hinge axes, respectively. The first and second hinge axes are transverse to each other. The upper and lower hingeable flanges are respectively coupled with the handlebar and the front fork. The handlebar is turned relative to the front fork about the first and second hinge axes to permit a handlebar line of the handlebar to be parallel to a longitudinal direction in which the bicycle extends so as to fold the bicycle and to minimize the entire width of the folded bicycle. | 2010-08-19 |
20100207357 | COUPLER CONVERTER ADAPTER - The invention comprises a coupler converter/adapter for use with vehicles to be towed such as utility trailers. The coupler converter is configured with a first attachment mechanism configured for being associated with a vehicle to be towed's coupling device. The coupler converter is further configured with a second attachment mechanism that is different from the first attachment mechanism, such second attachment mechanism configured for being associated with a trailer hitch associated with a tow vehicle. The coupler converter is configured to be stowed on the utility trailer when not being used. In one configuration, the coupler converter can be used as a coupler lock to deter theft. | 2010-08-19 |
20100207360 | "Multi-Use Clevis/Ball Combination Hitch Assembly" - A hitch assembly includes a housing bracket having side members and a connecting member. A lower platform is attached to the housing bracket such that a cavity is formed between the lower platform and the connecting member. An L-shaped upper platform is configured to engage the cavity. A mounting bracket is connected to the housing bracket and has at least one adjustment aperture. | 2010-08-19 |
20100207363 | MOTOR VEHICLE SEAT - The invention relates to a motor vehicle seat ( | 2010-08-19 |
20100207366 | TWO SHOT AUTOMOTIVE PSIR CHUTE - An automotive PSIR hidden chute assembly contained behind an automotive instrument panel. The PSIR may include chute forward and rearward doors, first and second chute flanges, and an instrument panel, each constructed of a first hard material, and first and second chute hinges, first and second chute sidewalls and a chute end wall, each constructed of a second tough ductile material, such that the first material and the second material have different thermal expansion properties and different elastic modulus properties. | 2010-08-19 |
20100207373 | Diverter for the Seatbelt System of a Motor Vehicle - A deflector for a safety belt system of a motor vehicle with a metal core, which has a mounting aperture in the upper section ( | 2010-08-19 |
20100207374 | Bicycle fender allowing different color selection - A bicycle fender allowing different color selection includes a frame and a panel. The frame has a body at the periphery formed in a shape of the fender, and at least one carved out zone and at least one fastening element to be coupled with the panel to form changeable color and pattern combinations that can be selected and installed according to users' requirements and preferences. | 2010-08-19 |
20100207375 | BOOK PRODUCT AND PAGES FOR THE SAME - A book product is described comprising a plurality of sheets. Each sheet is provided with at least one binding preweakening pattern along at least one side parallel to the edge between straight lateral edges of the sheet. The binding preweakening patterns of sheets lying on top of one another are aligned with one another. An elastic binding device is arranged in the area of the binding preweakening patterns, the elastic binding device holding the sheets together. Further, a sheet for insertion into the book product is described. The sheets can be easily inserted into and removed from the book product. | 2010-08-19 |
20100207381 | PIPE CONNECTOR PRODUCTION METHOD - The invention relates to the production of a connector intended for a pipe, including an end piece which is mounted to the end of a pipe. The connector includes a sleeve covering said pipe end in order to crimp same onto the mounting end. According to the invention, the sleeve includes an annular chamber, while the armoring wires have free ends which are folded back against the outer polymer sheath, said sealed annular chamber surrounding the aforementioned pipe end. The annular chamber is then dilated with the injection of a fluid in order to maintain the free ends engaged between the outer polymer sheath and the sleeve. | 2010-08-19 |
20100207382 | ELECTROFUSION FITTING - A moulded electrofusion fitting ( | 2010-08-19 |
20100207392 | OCEAN WAVE-POWERED ELECTRIC GENERATOR - Provided is a power generating device comprising a weight suspended from a buoy via a zip-line and at least two gears disposed on said zip-line which are coupled to a drive shafts, which in turn are coupled to an electric generator. The device converts the mechanical power of oscillating ocean waves into electricity. | 2010-08-19 |
20100207395 | GENERATOR UTILIZING FLUID-INDUCED OSCILLATIONS - An electrical generator including a magnetic field generator and at least one energy converter for converting energy present in fluid flows into vibrations or oscillations. The converter includes a flexible membrane having at least two fixed ends. The membrane vibrates when subject to a fluid flow. One of the electrical conductor and the magnetic field generator is attached to the membrane and configured to move with the membrane. The vibration of the membrane caused by the fluid flow causes a relative movement between the electrical conductor and the applied magnetic field. The relative movement causes a change in the strength of the magnetic field applied to the electrical conductor, and the change in the strength of the magnetic field applied to the electrical conductor induces a current flowing in the conductor. | 2010-08-19 |
20100207398 | HYDRAULIC DRIVE TRAIN WITH ENERGY DISSIPATION FOR ELECTRICITY GENERATION - The disclosure relates to a hydraulic drive train with energy dissipation for electrical generation. The disclosure is particularly adapted to wind-driven embodiments wherein the input power can fluctuate quickly. A hydraulic pump is provided in the nacelle of the windmill and powered by the wind turbine shaft. This hydraulic pump provides high pressure oil to generators, typically at ground level. The generators are protected from high pressure oil spikes by a pressure relief valve. Electric pumps on the ground level provide or supercharge the oil to the hydraulic pump in the nacelle. | 2010-08-19 |
20100207399 | PYRAMID ELECTRIC GENERATOR - A pyramid electric generator for harvesting the vibrational energies of Earth's atomic oscillators according to the present invention comprises: (1) an antenna/waveguide that is geometrically optimized; (2) a coil wound with an insulated conductor on a nonconductive coil form, the coil being connected at its top lead to the conducting surface of the antenna/waveguide such that the coil is connected near the point at which the electric field contacts the antenna/waveguide, the antenna/waveguide serving as a quasi-capacitive series element to provide a specific resonant frequency; (3) the bottom lead of the coil is connected to a driver operating in the LF or ELF bands. In another mode of operation, a secondary coil is positioned coaxially within the first coil acting as a resonant step-up transformer winding. The generator resonantly couples into specific frequencies of Earth's atomic oscillators and extracts electric energy thereof. | 2010-08-19 |
20100207408 | REMOTE DEVICE ACCESS SYSTEM - A remote device access system is provided. The system includes a receiving member, an engaging head and a containment cage. The receiving member is configured to be coupled to a device (such as a smoke detector and the like) that is to be positioned in an out of arms reach location. The engaging head is configured to be coupled to an elongated member. The engagement head is further configured to selectively engage the receiving member coupled to the device. The containment cage is configured to be coupled to a surface at the out of arms reach location. The containment cage forms a containing chamber that is configured to selectively hold the device. The elongated member is configured to place and remove the device from the containing chamber of the containment cage via the engaging head and receiving member. | 2010-08-19 |
20100207411 | MEMS-BASED MICRO AND NANO GRIPPERS WITH TWO-AXIS FORCE SENSORS - The present invention relates to a design and microfabrication method for microgrippers that are capable of grasping micro and nano objects of a large range of sizes and two-axis force sensing capabilities. Gripping motion is produced by one or more electrothermal actuators. Integrated force sensors along x and y directions enable the measurement of gripping forces as well as the forces applied at the end of microgripper arms along the normal direction, both with a resolution down to nanoNewton. The microfabrication method enables monolithic integration of the actuators and the force sensors. | 2010-08-19 |
20100207415 | TAILGATE ASSEMBLIES AND VEHICLES INCLUDING SAME - A tailgate assembly is provided for a cargo bed of a vehicle. The tailgate assembly includes a support panel and a tailgate panel. The support panel is configured for attachment to a vehicle such that the support panel is selectively pivotable between horizontal and vertical positions. The tailgate panel is attached to the support panel. The tailgate panel is configured to selectively define an end wall for the cargo bed when the support panel is in the horizontal position. The tailgate panel is configured to selectively define a step when the support panel is in the vertical position. A vehicle including a cargo bed having such a tailgate assembly is also provided. | 2010-08-19 |
20100207422 | STOWABLE VEHICLE SEAT - There is provided a stowable vehicle seat having improved operability. This seat includes a seat support part for rotatably supporting one end part side of a seat cushion, and a seat back that is foldable over the seat cushion via a reclining mechanism. The reclining mechanism includes a spiral spring for urging the seat back to fold the back to the seat cushion side with a predetermined angle with respect to the seat cushion, a first locking part disposed in a raised state on the cushion side of a connecting part between the cushion and the seat back to lock one end part side of the spiral spring, and a second locking part disposed in a raised state on the seat back side of the connecting part between the cushion and the back to lock the other end part side of the spiral spring to the seat back side. | 2010-08-19 |
20100207427 | VEHICLE WITH HIDDEN PILLOWS FOR BED MODE - A vehicle may have a load floor with a load receiving surface that is supported to the frame and a panel having first and second sides, the second side having a storage cavity. The panel may be adjustable between: (1) a first position where the first side defines at least a portion of the load receiving surface and the second side defines no portion of the load receiving surface; and, (2) a second position where the first side defines no portion of the load receiving surface and the second side defines at least a portion of the load receiving surface. When the panel is in the first position, a pillow may be at least partially received within the storage cavity and it may be hidden. When the panel is in the second position, the pillow may not be hidden. | 2010-08-19 |
20100207428 | SIDE VEHICLE-BODY STRUCTURE OF AUTOMOTIVE VEHICLE - A second closed cross section which projects toward the outside from a third lower flange of a side sill outer and a lower end portion is provided. Lower cross sections of the third lower flange and the lower end portion contact a second upper wall portion. The second closed cross section and a third closed cross section are formed by a side sill reinforcement of a frame member of a vehicle body. Thereby, a split line can be made be recognized as on body with the second closed cross section, so that both increasing the vehicle-body rigidity and improving the exterior appearance can be achieved. | 2010-08-19 |
20100207432 | BASE AND SUPPORT SYSTEM FOR A PATIENT SUPPORT APPARATUS - A base for a patient support apparatus includes a bump member configured to at least partially surround an electrical system of the patient support apparatus. The bump member is configured to be releaseably engaged with a cover that is configured to at least partially cover the electrical system of the patient support apparatus. The engagement of the cover and bump member is manually releasable. | 2010-08-19 |
20100207434 | OFFICE COMPONENTS, SEATING STRUCTURES, METHODS OF USING SEATING STRUCTURES, AND SYSTEMS OF SEATING STRUCTURES - Office components are described that include a base, a seat supported by the base, a microprocessor, and a load sensor electrically coupled with the microprocessor and mechanically coupled with the seat and, based on movement thereof, operative to detect occupancy of the seat and provide a signal to the microprocessor indicative thereof. The load sensor may be a strain gauge, a piezo device or combination thereof. | 2010-08-19 |