33rd week of 2011 patent applcation highlights part 13 |
Patent application number | Title | Published |
20110198529 | Shut-Off Valve - Shut-off valve of a fluid having a valve body ( | 2011-08-18 |
20110198530 | Method of Producing a Bismuth Vanadium Oxide Derivative of Bi4V2O11 Using Molten Salt Synthesis, and Product Produced - A method comprising mixing a bismuth precursor, a vanadium precursor, and at least one metal dopant precursor together with a salt or salt mixture having a eutectic melting temperature of no greater than 680° C. to form a homogeneous mixture, which is heated to a temperature of from 550° C. to 700° C. to produce a molten state of the salt or salt mixture and to obtain a metal doped bismuth vanadium oxide product that is a derivative of Bi | 2011-08-18 |
20110198531 | COMPOSITION FOR POLISHING SILICON NITRIDE AND METHOD OF CONTROLLING SELECTIVITY USING SAME - A composition for polishing silicon nitride according to the present invention includes colloidal silica, a polishing aid including a phosphoric acid compound and a sulfuric acid compound. By further including an oxidizing agent, a first selectivity representing the ratio of a polishing speed for a metal layer to a polishing speed for a silicon nitride layer and a second selectivity representing the ratio of a polishing speed for an oxide insulating layer to a polishing speed for a silicon nitride are controlled. | 2011-08-18 |
20110198532 | LITHIUM-CONTAINING TRANSITION METAL SULFIDE COMPOUNDS - The present invention provides a convenient process for making lithium-containing transition metal sulfides involving heating at least on transition metal sulfide with a lithium-containing compound, wherein the lithium-containing compound is selected from one or more of lithium oxide, lithium sulfate, lithium carbonate, anhydrous lithium hydroxide, lithium hydroxide monohydrate, lithium oxalate, lithium nitrate, and any material that is a precursor for any of these lithium-containing compounds. | 2011-08-18 |
20110198533 | NANOPARTICLES FROM SLIGHTLY OXIDISED CELLULOSE - The present invention provides novel nanoscale cellulose particles and also a process for their production. The cellulose-based particles obtained have volume-averaged particle sizes of less than | 2011-08-18 |
20110198534 | UREA COMPOUND, SELF-ASSEMBLY OF UREA COMPOUNDS, ORGANOGEL CONTAINING SELF-ASSEMBLY, AND METHOD FOR PRODUCING ORGANOGEL - A urea compound of the present invention is represented by general formula (1) shown below. | 2011-08-18 |
20110198535 | HYDROXY- AND ALDEHYDE FUNCTIONAL COMPOUNDS - The invention relates to a method for producing a mixture containing hydroxy- and aldehyde functional compounds by a cross-metathesis reaction of at least one at least monounsaturated fatty acid or at least one at least monounsaturated fatty acid derivative with an olefinic compound having at least one hydroxy group and at least one C—C double bond, in the presence of a metathesis catalyst at a maximum temperature of 180° C. | 2011-08-18 |
20110198536 | LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - The invention is to provide a liquid crystal composition that satisfies at least one of characteristics such as a high maximum temperature of a nematic phase, a low minimum temperature of a nematic phase, a small viscosity, a suitable optical anisotropy, a large negative dielectric anisotropy, a large specific resistance, a high stability to ultraviolet light and a high stability to heat, or that is suitably balanced regarding at least two of the characteristics; and is to provide a AM device that has a short response time, a large voltage holding ratio, a large contrast ratio, a long service life and so forth; wherein the liquid crystal composition has negative dielectric anisotropy and includes a specific compound having tertahydropyran-2,5-diyl as a first component and a specific four-ring compound having a high maximum temperature as a second component, and the liquid crystal display device contains this composition. | 2011-08-18 |
20110198537 | LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - The invention is to provide a liquid crystal composition that satisfies at least one of characteristics such as a high maximum temperature of a nematic phase, a low minimum temperature of a nematic phase, a small viscosity, a suitable optical anisotropy, a large negative dielectric anisotropy, a large specific resistance, a high stability to ultraviolet light and a high stability to heat, or that is suitably balanced regarding at least two of the characteristics; and is to provide a AM device that has a short response time, a large voltage holding ratio, a large contrast ratio, a long service life and so forth, wherein the liquid crystal composition has negative dielectric anisotropy and includes a two-ring compound having a large negative dielectric anisotropy and having at least three fluorines or chlorines at the lateral positions as a first component, a specific compound having a large negative dielectric anisotropy as a second component, a specific compound having a small viscosity as a third component, and a specific compound having a large negative dielectric anisotropy as a fourth component, and the liquid crystal display device contains this composition. | 2011-08-18 |
20110198538 | INORGANIC-ORGANIC COMPOSITE LUMINOPHORE - The present invention relates to a composite luminophore comprising an inorganic matrix and an organic fluorescent dye, wherein the inorganic matrix is formed from an inorganic compound, and wherein the organic fluorescent dye has one or more functional groups by means of which the fluorescent dye is incorporated into the inorganic matrix, or is bound chemically thereto. The present invention further relates to a process for preparing such a composite luminophore and to the use thereof. | 2011-08-18 |
20110198539 | Process for producing fluorescent substance composite glass and fluorescent substance composite glass green sheet - The present invention provides a fluorescent substance composite glass which is chemically stable, has a large size, is reduced in wall thickness, has a uniform thickness and therefore has a high energy conversion efficiency; a fluorescent substance composite glass green sheet and a process for producing the fluorescent substance composite glass. The fluorescent substance composite glass of the present invention is produced by baking a mixture containing a glass powder and an inorganic fluorescent substance powder, in which the energy conversion efficiency to a visible light wavelength region of 380 to 780 nm is 10% or more, when light having an emission peak in a wavelength range of 350 to 500 nm is applied. | 2011-08-18 |
20110198540 | COMPOSITIONS OF VAPOUR PHASE CORROSION INHIBITORS, METHOD FOR THE PRODUCTION THEREOF AND USE THEREOF FOR TEMPORARY PROTECTION AGAINST CORROSION - The invention relates to substance combinations comprising (1) at least one substituted, preferably polysubstituted, pyrimidine, (2) at least one monoalkylurea, (3) at least one C | 2011-08-18 |
20110198541 | NANOCOMPOSITE THERMOELECTRIC CONVERSION MATERIAL, THERMOELECTRIC CONVERSION ELEMENT INCLUDING THE SAME, AND METHOD OF PRODUCING NANOCOMPOSITE THERMOELECTRIC CONVERSION MATERIAL - A nanocomposite thermoelectric conversion material includes a matrix of the thermoelectric conversion material; and a dispersed material that is dispersed in the matrix of the thermoelectric conversion material, and that is in a form of nanoparticles. Roughness of an interface between the matrix of the thermoelectric conversion material and the nanoparticles of the dispersed material is equal to or larger than 0.1 nm. | 2011-08-18 |
20110198542 | Conductive carbon nanotube-metal composite ink - An electrically conductive carbon nanotube-metal composite ink may include a carbon nanotube-metal composite in which metal nanoparticles are bound to a surface of a carbon nanotube by chemical self-assembly. The electrically conductive carbon nanotube-metal composite ink may have higher electrical conductivity than a commonly used metal nanoparticles-based conductive ink, and may also be used in deformable electronic devices that are flexible and stretchable, as well as commonly used electronic devices, due to the bending and stretching properties of the carbon nanotube itself. | 2011-08-18 |
20110198543 | AQUEOUS DISPERSION OF FINE CARBON FIBERS, METHOD FOR PREPARING THE AQUEOUS DISPERSION, AND ARTICLES USING THEREOF - Upon dispersing fine carbon fibers into water, by using an anionic surfactant having a high electrostatic repulsion effect, an nonionic surfactant having a high stereoscopic repulsion effect, and an anionic surfactant having high electrostatic and stereoscopic repulsion effects, in combination, an aqueous dispersion of fine carbon fibers which shows a high dispersibility without causing significant cohesion of mutual fine carbon fibers, and maintains a mean particle diameter (d | 2011-08-18 |
20110198544 | EMI Voltage Switchable Dielectric Materials Having Nanophase Materials - Various embodiments of the invention disclosed herein provide for adjusting the electrical response of a voltage switchable dielectric material by incorporating one or more nanophase materials. Various aspects provide for a VSDM having improved electrical and/or physical properties. In some cases, a VSDM may have improved (e.g., lower) leakage current at a given voltage. A VSDM may have improved resistance to ESD events, and may have improved resistance to degradation associated with protecting against an ESD event. | 2011-08-18 |
20110198545 | INSULATING COMPOSITION AND METHOD FOR MAKING THE SAME - A method is provided that includes providing a resin in liquid form. The resin can be partially cured, and subsequent to partially curing the resin, the resin can be mixed with filler particles. The resin and filler particles can be mixed, say, in a planetary mixer, and can be exposed to an ambient pressure less than atmospheric pressure during mixing. Subsequent to mixing the resin and filler particles, the resin can be fully cured. The fully-cured resin can be disposed between first and second conductive components configured to be maintained at different potentials, such as between a phase conductor and a ground conductor. | 2011-08-18 |
20110198546 | PHOTOCHROMIC MATERIAL - Photochromic dyes are disclosed. A photochromic dye can include a first photo-reactive group and a second photo-reactive group. A first photochromic reaction can be induced in the first photo-reactive group of the photochromic dye by radiation having a first intensity, and a second photochromic reaction can be induced in the second photo-reactive group of the photochromic dye by radiation having a second intensity. The second intensity may be greater than the first intensity. | 2011-08-18 |
20110198547 | Anchor windlass for boats - A windlass for a boat pulls in an anchor rode. A chainwheel mounted on a shaft has an annular groove to engage the anchor rode. A flexible retainer with a leaf spring is disposed across the chainwheel annular groove to press the rode into the chainwheel annular groove. The retainer has trunnions that pivot and slide transversely in upper and lower arcuate grooves, toward the slack portion of the rode. A housing is attached to a base and covers the rode for safety. The housing has the upper arcuate groove and an arcuate member has the lower arcuate groove. The base, housing, and arcuate member are aligned with three key members that engage one another. The rode slides on a low friction wear plate attached to the base. A funnel with a mouth facing forward is mounted on the base for directing the rode downward through a nozzle into the boat. A motor drive has an electric motor and a worm gear transmission attached to the shaft lower end for rotating the shaft. | 2011-08-18 |
20110198548 | Electric Fence Power Control for Temporary Interruptions - A mounting arrangement for mounting exposed filamentary electrical conductors on fences intended for conversion to electrified fences. The arrangement provides fence engaging panels for mounting, which panels include electrical contacts. The panels may include posts having grooves for tying a filamentary conductor to the panel independently of connection to an electrical contact. The panels may be fastened by fasteners which resemble ratchet action cable ties, and which are formed integrally with the collars. Holes are formed in the panels to accept fasteners such as screws. Collars may be arcuate members, planar panel members, or may comprise a plurality of planar panels hinged to one another. Collars and associated contacts may be installed in numbers and mounting arrangements assuring two pole break for each otherwise energized conductors where those conductors span a gate, thereby fully de-energizing the gate automatically when opened, and automatically re-establishing electrical continuity when the gate is closed. | 2011-08-18 |
20110198549 | Freestanding Pet Barrier - A self-supporting pet barrier comprising a front panel and two side panels, each panel having floor-contacting surfaces preferably to which a friction reducing substance has been applied is disclosed. The front and side panels preferably are attached so that the side panels can be positioned from generally perpendicularly to the front panel in use to a folded position adjacent said front panel for storage or travel. A generally triangular stabilizing leg may protrude forward from the plane of the front panel and can be attached in either the side panel or front panel. | 2011-08-18 |
20110198550 | FINIAL WITH CONCEALED TORCH FOR HOLLOW POST - A finial/torch assembly for mounting atop a hollow post portion of a fence or railing and a fence/railing assembly including the same includes a base adapted to be fitted securely atop the post, a burner including a fuel reservoir and a wick extending into the fuel reservoir, and a removable cover adapted to be fitted over the base to at least partially conceal the burner and to protect the burner from weather. The burner is secured to the base and the fuel reservoir extends from beneath the base and is adapted to be fitted substantially within an upper portion of the hollow post. | 2011-08-18 |
20110198551 | FINIAL WITH CONCEALED TORCH FOR A POST - A finial/torch assembly for mounting atop a solid or hollow post portion of a fence or railing and a fence/railing assembly including the same includes a base adapted to be fitted securely atop the post, a burner including a fuel reservoir and a wick extending into the fuel reservoir, and a removable cover adapted to be fitted over the base to at least partially conceal the burner and to protect the burner from weather. | 2011-08-18 |
20110198552 | Hidden rail fastener connection system - A hidden rail fastener connection system utilizes open-ended top and bottom rail supports, each support having a bottom floor and upstanding side walls. An open-ended channel extends the length of each side wall and two or more open-ended channels extend the length of each bottom floor. Specially designed brackets are secured to the ends of the rail supports. The brackets have a set of openings aligned with the ends of the channels for the insertion of fasteners through the openings and into the channels and another set of openings for the insertion of fasteners into the vertical structures to which the rail and baluster system is to be attached. Top and bottom rail members are provided to enclose the rail supports and cover all fasteners. | 2011-08-18 |
20110198553 | Wedge Post Base System - A wedge post-base system for adjusting the orientation of an attached post relative to a mounting surface is disclosed. The base utilizes a two-piece structure, each piece having an angled mating surface relative to an opposing surface which allows a central axis of a post mounting collar to be altered, and thus the angle of the post itself. The resulting angle addresses the issue of mounting posts on a sloped plane. A fencing system having hinged railings and balusters as well as a railing system having a hinged upper rail are also disclosed. | 2011-08-18 |
20110198554 | NON-VOLATILE MEMORY DEVICE - According to one embodiment, a non-volatile memory device includes a first wiring extending in a first direction, a second wiring extending in a second direction, and a variable resistance memory cell which is disposed at an intersection between the first wiring and the second wiring so as to be held between the first wiring and the second wiring and includes a variable resistive element and a rectifying element. In a space between the variable resistance memory cells adjacent to each other, at least a periphery of the variable resistive element is evacuated or filled with a gas. | 2011-08-18 |
20110198555 | CHALCOGENIDE FILM AND MANUFACTURING METHOD THEREOF - A chalcogenide film of the present invention is deposited, by sputtering, in a contact hole formed in an insulating layer on a substrate. The chalcogenide film comprises an underlayer film formed at least on a bottom portion of the contact hole and a crystal layer made of a chalcogen compound, and formed onto the underlayer film and in the contact hole. | 2011-08-18 |
20110198556 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile semiconductor memory device in accordance with an embodiment comprises a lower electrode layer, a variable resistance layer, and an upper electrode layer. The lower electrode layer is provided over a substrate. The variable resistance layer is provided on the lower electrode layer and is configured such that an electrical resistance of the variable resistance layer can be changed. The upper electrode layer is provided on the variable resistance layer. The variable resistance layer comprises a carbon nanostructure and metal atoms. The carbon nanostructure is stacked to have a plurality of gaps. The metal atoms are diffused into the gaps. | 2011-08-18 |
20110198557 | METHOD FOR FABRICATION OF CRYSTALLINE DIODES FOR RESISTIVE MEMORIES - The present invention, in one embodiment, provides a method of producing a PN junction the method including at least the steps of providing a Si-containing substrate; forming an insulating layer on the Si-containing substrate; forming a via through the insulating layer to expose at least a portion of the Si-containing substrate; forming a seed layer of the exposed portion of the Si containing substrate; forming amorphous Si on at least the seed layer; converting at least a portion of the amorphous Si to provide crystalline Si; and forming a first dopant region abutting a second dopant region in the crystalline Si. | 2011-08-18 |
20110198558 | GRAPHENE CIRCUIT BOARD HAVING IMPROVED ELECTRICAL CONTACT BETWEEN GRAPHENE AND METAL ELECTRODE, AND DEVICE INCLUDING SAME - A circuit board having a graphene circuit according to the present invention includes: a base substrate; a patterned aluminum oxide film formed on the base substrate, the patterned aluminum oxide film having an average composition of Al | 2011-08-18 |
20110198559 | CNT DEVICES, LOW-TEMPERATURE FABRICATION OF CTN AND CNT PHOTO-RESISTS - A method is provided for growth of carbon nanotube (CNT) synthesis at a low temperature. The method includes preparing a catalyst by placing the catalyst between two metal layers of high chemical potential on a substrate, depositing such placed catalyst on a surface of a wafer, and reactivating the catalyst in a high vacuum at a room temperature in a catalyst preparation chamber to prevent a deactivation of the catalyst. The method also includes growing carbon nanotubes on the substrate in the high vacuum in a CNT growth chamber after preparing the catalyst. | 2011-08-18 |
20110198560 | SUBSTRATE FOR EPITAXIAL GROWTH, PROCESS FOR MANUFACTURING GaN-BASED SEMICONDUCTOR FILM, GaN-BASED SEMICONDUCTOR FILM, PROCESS FOR MANUFACTURING GaN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT AND GaN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT - A substrate for epitaxial growth of the present invention comprises: a single crystal part comprising a material different from a GaN-based semiconductor at least in a surface layer part; and an uneven surface, as a surface for epitaxial growth, comprising a plurality of convex portions arranged so that each of the convex portions has three other closest convex portions in directions different from each other by 120 degrees and a plurality of growth spaces, each of which is surrounded by six of the convex portions, wherein the single crystal part is exposed at least on the growth space, which enables a c-axis-oriented GaN-based semiconductor crystal to grow from the growth space. | 2011-08-18 |
20110198561 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a light emitting portion, a first layer, a second layer, and an intermediate layer. The semiconductor layers include nitride semiconductor. The light emitting portion is provided between the n-type semiconductor layer and the p-type semiconductor layer and includes a quantum well layer. The first layer is provided between the light emitting portion and the p-type semiconductor layer and includes Al | 2011-08-18 |
20110198562 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a light emitting device. In one embodiment, a light emitting device includes: a substrate including β-Ga203; a light emitting structure on the substrate, the light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; an electrode on the light emitting structure; and a porous layer at a lateral surface region of the substrate. | 2011-08-18 |
20110198563 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM HAVING THE SAME - A light emitting device includes a light emitting structure including a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer; and a transparent electrode layer formed at least one of on and under the light emitting structure, wherein the transparent electrode layer has a thickness in a range of 30 nm to 70 nm to obtain a transmittance equal to or greater than 70% with respect to a wavelength range of light of 420 nm to 510 nm. | 2011-08-18 |
20110198564 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - Provided is a light emitting device. In one embodiment, the light emitting device includes: a first conductive type semiconductor layer including a plurality of grooves; an active layer formed on a upper surface of the first conductive type semiconductor layer and along the grooves; an anti-current leakage layer having a flat upper surface on the active layer; and a second conductive type semiconductor layer on the anti-current leakage layer. | 2011-08-18 |
20110198565 | LIGHT-EMITTING ELEMENT WITH IMPROVED LIGHT EXTRACTION EFFICIENCY, LIGHT-EMITTING DEVICE INCLUDING THE SAME, AND METHODS OF FABRICATING LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING DEVICE - Provided are a light-emitting element, a light-emitting device including the same, and methods of fabricating the light-emitting element and the light-emitting device. The light-emitting element includes a substrate on which a dome pattern is formed and a light-emitting structure conformally formed on the dome pattern. The light-emitting structure includes a first conductive layer of a first conductivity type, a light-emitting layer, and a second conductive layer of a second conductivity type sequentially stacked on the substrate. The light-emitting element also includes a first electrode formed on the first conductive layer and a second electrode formed on the second conductive layer. | 2011-08-18 |
20110198566 | METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT AND LIGHT EMITTING ELEMENT - A method for manufacturing a light emitting element is directed to a method for manufacturing a light emitting element of a III-V group compound semiconductor having a quantum well structure including In and N, including the steps of: forming a well layer including In and N; forming a barrier layer having a bandgap wider than a bandgap of the well layer; and supplying a gas including N and interrupting epitaxial growth after the step of forming the well layer and before the step of forming the barrier layer. In the step of interrupting epitaxial growth, the gas having decomposition efficiency higher than decomposition efficiency of decomposition from N | 2011-08-18 |
20110198567 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT MANUFACTURING METHOD - The semiconductor light-emitting device ( | 2011-08-18 |
20110198568 | NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCTION THEREOF - A light-emitting apparatus of the present invention includes: a mounting base | 2011-08-18 |
20110198569 | APPARATUS AND METHODS OF NANOPATTERNING AND APPLICATIONS OF SAME - A method for patterning nanostructures in a semiconductor heterostructure, which has at least a first layer and a second layer, wherein the first layer has a first surface and an opposite, second surface, the second layer has a first surface and an opposite, second surface, and the first layer is deposited over the second layer such that the second surface of the first layer is proximate to the first surface of the second layer. The method includes the steps of making indentations in a pattern on the first surface of the first layer of the semiconductor heterostructure; bonding the semiconductor heterostructure to a support substrate such that the first surface of the first layer of the semiconductor heterostructure is faced to the support substrate; etching off the second layer of the semiconductor heterostructure; and depositing a third layer over the second surface of the first layer of the semiconductor heterostructure. | 2011-08-18 |
20110198570 | SELF ASSEMBLED NANO DOTS (SAND) AND NON-SELF ASSEMBLED NANO-DOTS (NSAND) DEVICE STRUCTURES AND FABRICATION METHODS THEREOF TO CREATE SPACERS FOR ENERGY TRANSFER - A structure and method for transferring electronic charge or heat or light between substrates. The structure includes first and second substrates separated from one another and a plurality of localized spacers connecting the first and second substrates together. At least one of the localized spacers having a lateral dimension less than 350 nm. A sub-micron separation distance between the first and second substrates is configured to provide carrier tunneling or to provide heat transfer or light transfer between the first and second substrates. The method provides charge carriers or heat or light to a first substrate. The first substrate is separated from a second substrate by at least one localized spacer having a lateral dimension less than 350 nm and tunnels the charge carriers or couples the heat or couples light from the first substrate to the second substrate across a sub-micron gap between the first and second substrates formed by the at least one localized spacer. | 2011-08-18 |
20110198571 | ORGANIC COMPOUND AND ORGANIC ELECTROLUMINESCENCE DEVICE EMPLOYING THE SAME - Organic compounds and organic electroluminescence devices employing the same are provided. The organic compound has a chemical structure represented as follows: | 2011-08-18 |
20110198572 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An OLED display having an improved pad area, and a manufacturing method thereof. The OLED display includes a substrate including a display area and a pad area, an organic light emitting element formed in the display area, a plurality of pads formed in the pad area, and receiving an external signal for light emission of the organic light emitting element and transmitting the signals to the organic light emitting element, and a planarization layer insulating the pads. The planarization layer includes a recess portion formed between the pads. | 2011-08-18 |
20110198573 | CHARGE-TRANSPORTING POLYMER, COMPOSITION FOR ORGANIC ELECTROLUMINESCENT ELEMENT, ORGANIC ELECTROLUMINESCENT ELEMENT, ORGANIC EL DISPLAY, AND ORGANIC EL LIGHTING - A subject for the invention is to provide a charge-transporting polymer having high hole-transporting ability and excellent solubility and film-forming properties and a composition for organic electroluminescent element which contains the charge-transporting polymer. Another subject for the invention is to provide an organic electroluminescent element which has a high current efficiency and high driving stability. The charge-transporting polymer comprises a group represented by the following formula (1) as a side chain: | 2011-08-18 |
20110198574 | Quinoxaline Derivative, and Light-Emitting Device, Electronic Device Using the Quinoxaline Derivative - The present invention provides a novel organic compound having excellent heat resistance. By using the novel organic compound, a light-emitting device and an electronic device having excellent heat resistance can be provided. A quinoxaline derivative represented by the general formula (1) is provided. Since the quinoxaline derivative represented by the general formula (1) has excellent heat resistance, when it is used for a light-emitting element, a light-emitting device using the light-emitting element also have excellent heat resistance. Further, electronic devices having excellent heat resistance can be provided. | 2011-08-18 |
20110198575 | COMPOSITIONS COMPRISING NOVEL COMPOUNDS AND ELECTRONIC DEVICES MADE WITH SUCH COMPOSITIONS - The present invention relates to novel compounds and polymers, compositions comprising novel compounds or polymers, and electronic devices comprising at least one layer containing the compound or polymer. | 2011-08-18 |
20110198576 | AMINO COMPOUND FOR ORGANIC LIGHT-EMITTING DEVICE AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - An amino compound for an organic light-emitting device of general formula [1]: | 2011-08-18 |
20110198577 | ORGANIC ELECTROLUMINESCENT ELEMENT AND DISPLAY DEVICE - An organic electroluminescent element having high light emission efficiency, high color purity, and a long light emission lifetime, and a display device using the same are provided. In an organic electroluminescent element | 2011-08-18 |
20110198578 | SILOLES SUBSTITUTED BY FUSED RING SYSTEMS AND USE THEREOF IN ORGANIC ELECTRONICS - The present invention relates to the use of siloles substituted by fused ring systems in organic electronics applications, and to specific siloles substituted by fused ring systems and to the use thereof in organic electronics applications. | 2011-08-18 |
20110198579 | Host material for light-emitting diodes - The present invention relates to a host material comprising a compound having two carbazole moieties which is suitable for blue-emitting OLEDs. Surprisingly, it has been found that when appropriate substituents are present in the carbazole structure, the solubility of the compounds can be improved without any adverse effect on the OLED performance. The present invention further relates to the use of the host materials and to an organic light emitting device comprising the host material. | 2011-08-18 |
20110198580 | PHOTOACTIVE COMPOSITION AND ELECTRONIC DEVICE MADE WITH THE COMPOSITION - There is provided a photoactive composition including: (a) a first host material comprising a phenanthroline derivative; (b) a second host material comprising an aromatic amine; and (c) an electroluminescent dopant material. The weight ratio of first host material to second host material is in the range of 99:1 to 50:50. | 2011-08-18 |
20110198581 | AROMATIC AMINE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME - Disclosed is a long-life organic EL device having high luminous efficiency even after storage at high temperatures. Also disclosed is an aromatic amine derivative which enables to realize such an organic EL device. The aromatic amine derivative is represented by the following general formula (1). | 2011-08-18 |
20110198582 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device includes an organic compound layer containing an organic compound in which the 3-position of a benzo[k]fluoranthene ring is bonded to the 8-position of a fluoranthene ring, and an organic compound having a pyrene ring. | 2011-08-18 |
20110198583 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers, a light emitting portion, a multilayered structural body, and an n-side intermediate layer. The light emitting portion is provided between the semiconductor layers. The light emitting portion includes barrier layers containing GaN, and a well layer provided between the barrier layers. The well layer contains In | 2011-08-18 |
20110198584 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE - An organic light-emitting display device including: a gate electrode formed on a substrate; a first insulating layer formed on the gate electrode; an active layer formed on the first insulating layer, facing the gate electrode; a second insulating layer formed on the first insulating layer, having first openings to expose the active layer; source/drain electrodes formed on the second insulating layer, so as to be connected to exposed portions of the active layer through the first openings; and a metal layer formed on the active layer and contacting the second insulating layer. | 2011-08-18 |
20110198585 | LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND ELECTRONIC APPARATUS - It is an object of the present invention to provide a light emitting element with a low driving voltage. In a light emitting element, a first electrode; and a first composite layer, a second composite layer, a light emitting layer, an electron transporting layer, an electron injecting layer, and a second electrode, which are stacked over the first electrode, are included. The first composite layer and the second composite layer each include metal oxide and an organic compound. A concentration of metal oxide in the first composite layer is higher than a concentration of metal oxide in the second composite layer, whereby a light emitting element with a low driving voltage can be obtained. Further, the composite layer is not limited to a two-layer structure. A multi-layer structure can be employed. However, a concentration of metal oxide in the composite layer is gradually higher from the light emitting layer to first electrode side. | 2011-08-18 |
20110198586 | THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME - A thin film transistor including a gate electrode, a gate-insulating film, an oxide semiconductor film in contact with the gate-insulating film, and source and drain electrodes which connect to the oxide semiconductor film and are separated with a channel part therebetween, wherein the oxide semiconductor film comprises a crystalline indium oxide which includes hydrogen element, and the content of the hydrogen element contained in the oxide semiconductor film is 0.1 at % to 5 at % relative to all elements which form the oxide semiconductor film. | 2011-08-18 |
20110198587 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus according to aspects of the invention includes a power MOSFET including a main MOSFET and sensing MOSFET's. The main MOSFET and the sensing MOSFET's are formed on a semiconductor substrate, and a sensing MOSFET is selected for changing the sensing ratio and further for confining the sensing ratio variations within a certain narrow range stably from a low main current range to a high main current range. A semiconductor apparatus according to aspects of the invention facilitates reducing the manufacturing costs thereof, obviating the cumbersomeness caused in the use thereof, and confining the sensing ratio variations within a certain narrow range stably. | 2011-08-18 |
20110198588 | Polysilicon control etch-back indicator - This invention discloses a semiconductor wafer for manufacturing electronic circuit thereon. The semiconductor substrate further includes an etch-back indicator that includes trenches of different sizes having polysilicon filled in the trenches and then completely removed from some of the trenches of greater planar trench dimensions and the polysilicon still remaining in a bottom portion in some of the trenches having smaller planar trench dimensions. | 2011-08-18 |
20110198589 | SEMICONDUCTOR CHIP - A semiconductor chip comprises a metal pad exposed by an opening in a passivation layer, wherein the metal pad has a testing area and a bond area. During a step of testing, a testing probe contacts with the testing area for electrical testing. After the step of testing, a polymer layer is formed on the testing area with a probe mark created by the testing probe. Alternatively, a semiconductor chip comprises a testing pad and a bond pad respectively exposed by two openings in a passivation layer, wherein the testing pad is connected to the bond pad. During a step of testing, a testing probe contacts with the testing pad for electrical testing. After the step of testing, a polymer layer is formed on the testing pad with a probe mark created by the testing probe. | 2011-08-18 |
20110198590 | SINGLE CRYSTAL GROUP III NITRIDE ARTICLES AND METHOD OF PRODUCING SAME BY HVPE METHOD INCORPORATING A POLYCRYSTALLINE LAYER FOR YIELD ENHANCEMENT - In a method for making a GaN article, an epitaxial nitride layer is deposited on a single-crystal substrate. A 3D nucleation GaN layer is grown on the epitaxial nitride layer by HVPE under a substantially 3D growth mode. A GaN transitional layer is grown on the 3D nucleation layer by HVPE under a condition that changes the growth mode from the substantially 3D growth mode to a substantially 2D growth mode. A bulk GaN layer is grown on the transitional layer by HVPE under the substantially 2D growth mode. A polycrystalline GaN layer is grown on the bulk GaN layer to form a GaN/substrate bi-layer. The GaN/substrate bi-layer may be cooled from the growth temperature to an ambient temperature, wherein GaN material cracks laterally and separates from the substrate, forming a free-standing article. | 2011-08-18 |
20110198591 | METHOD OF MANUFACTURING HETEROJUNCTION BIPOLAR TRANSISTOR AND HETEROJUNCTION BIPOLAR TRANSISTOR - Disclosed is a method of forming a heterojunction bipolar transistor (HBT), comprising depositing a first stack comprising an polysilicon layer ( | 2011-08-18 |
20110198592 | THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THIN FILM TRANSISTOR - Disclosed are a thin film transistor having high reliability and providing a simplified fabricating process, and a method of fabricating the thin film transistor. In the method, a dielectric substrate is prepared, a semiconductor layer is formed on the dielectric substrate, a gate dielectric film is formed on the semiconductor layer, a first gate electrode is formed on the gate dielectric film, a second gate electrode contacting a side wall of the first gate electrode is formed, and impurities are implanted into the semiconductor layer using the first gate electrode as a mask. | 2011-08-18 |
20110198593 | SEMICONDUCTOR DEVICE - A semiconductor device with a novel structure in which stored data can be held even when power is not supplied and there is no limitation on the number of times of writing. In the semiconductor device, a plurality of memory cells each including a first transistor, a second transistor, and a capacitor is provided in matrix and a wiring (also called a bit line) for connecting one memory cell to another memory cell and a source or drain electrode of the first transistor are electrically connected to each other through a source or drain electrode of the second transistor. Accordingly, the number of wirings can be smaller than that in the case where the source or drain electrode of the first transistor and the source or drain electrode of the second transistor are connected to different wirings. Thus, the degree of integration of the semiconductor device can be increased. | 2011-08-18 |
20110198594 | Semiconductor Device and Manufacturing Method Thereof - It is an object to provide a semiconductor device having excellent electric characteristics or high reliability, or a manufacturing method thereof. A semiconductor device including a gate electrode, an oxide semiconductor layer overlapping with the gate electrode, a source electrode and a drain electrode in contact with the oxide semiconductor layer, and a gate insulating layer provided between the gate electrode and the oxide semiconductor layer is provided. The oxide semiconductor layer is formed by a facing target sputtering method. The carrier concentration of the oxide semiconductor is less than 1×10 | 2011-08-18 |
20110198595 | LIQUID CRYSTAL DISPLAY DEVICE - It is an object to provide a liquid crystal display device including a thin film transistor with high electric characteristics and high reliability. As for a liquid crystal display device including an inverted staggered thin film transistor of a channel stop type, the inverted staggered thin film transistor includes a gate electrode, a gate insulating film over the gate electrode, a microcrystalline semiconductor film including a channel formation region over the gate insulating film, a buffer layer over the microcrystalline semiconductor film, and a channel protective layer which is formed over the buffer layer so as to overlap with the channel formation region of the microcrystalline semiconductor film. | 2011-08-18 |
20110198596 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device including a pixel-defining layer and a spacer, and a method of manufacturing the same. The method includes: forming an organic insulating material layer on a pixel electrode; placing a half-tone mask including a light-blocking portion, a partial-transmitting portion, and a light-transmitting portion on the organic insulating material layer and performing an exposure process so that the pixel electrode corresponds to the light-transmitting portion, a pixel-defining layer at least partially surrounding the pixel electrode corresponds to the partial-transmitting portion, and a spacer adjacent to the pixel-defining layer corresponds to the light-blocking portion; and etching a portion of the organic insulating material layer that is exposed so that a pixel area on the pixel electrode is at least partially surrounded by the pixel-defining layer and the spacer. A taper angle of the pixel-defining layer is between about 15 degrees to about 30 degrees. | 2011-08-18 |
20110198597 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE - An organic light emitting display device includes at least one thin film transistor (TFT) on a substrate, the at least one TFT including a semiconductor active layer, a gate electrode insulated from the semiconductor active layer, and source and drain electrodes contacting the semiconductor active layer, a plurality of first electrodes electrically connected to the at least one TFT, a plurality of banks between the plurality of first electrodes, a plurality of organic layers on respective first electrodes, a plurality of second electrodes on respective organic layers, the second electrodes being separated from each other, and a connection electrode on the plurality of banks and the plurality of second electrodes, the connection electrode being electrically connected to the plurality of the second electrodes. | 2011-08-18 |
20110198598 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display apparatus includes a substrate, a thin film transistor (TFT) on the substrate, a first electrode on the TFT in each of a plurality of pixels, a first pixel define layer covering edges of the first electrode, the first pixel define layer including at least two layers, a second pixel define layer on the first pixel define layer, an organic emission layer on the first electrode, and a second electrode disposed to face the first electrode. | 2011-08-18 |
20110198599 | Semiconductor Device and Display Device Utilizing the Same - A source-drain voltage of one of two transistors connected in series becomes quite small in a set operation (write signal), thus the set operation is performed to the other transistor. In an output operation, two transistors operate as a multi-gate transistor, therefore, a current value can be small in the output operation. In other words, a current can be large in the set operation. Therefore, the set operation can be performed rapidly without being easily influenced by an intersection capacitance and a wiring resistance which are parasitic on a wiring and the like. Further, an influence of variations between adjacent ones can be small as one same transistor is used in the set operation and the output operation. | 2011-08-18 |
20110198600 | METHOD FOR MAKING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS OBTAINED BY THE METHOD, METHOD FOR MAKING THIN FILM TRANSISTOR SUBSTRATE AND THIN FILM TRANSISTOR SUBSTRATE OBTAINED BY THE METHOD, AND METHOD FOR MAKING DISPLAY APPARATUS AND DISPLAY APPARATUS OBTAINED BY THE METHOD - A semiconductor apparatus having a substrate and a laminate structure formed on the substrate, the laminate structure including an insulating film made of a metal oxide and a semiconductor thin film, both the insulating film and the semiconductor thin film being crystallized. | 2011-08-18 |
20110198601 | METHOD OF MANUFACTURING DISPLAY DEVICE - To provide a method of manufacturing a display device having an excellent impact resistance property with high yield, in particular, a method of manufacturing a display device having an optical film that is formed using a plastic substrate. The method of manufacturing a display device includes the steps of: laminating a metal film, an oxide film, and an optical filter on a first substrate; separating the optical filter from the first substrate; attaching the optical filter to a second substrate; forming a layer including a pixel on a third substrate; and attaching the layer including the pixel to the optical filter. | 2011-08-18 |
20110198602 | ALUMINUM ALLOY FILM FOR DISPLAY DEVICE, DISPLAY DEVICE, AND SPUTTERING TARGET - Disclosed is an Al alloy film which can be in direct contact with a transparent pixel electrode in a wiring structure of a thin film transistor substrate that is used in a display device, and which has improved corrosion resistance against an amine remover liquid that is used during the production process of the thin film transistor. Also disclosed is a display device using the Al alloy film. Specifically disclosed is an Al alloy film for a display device, said Al alloy film being directly connected with a transparent conductive film on a substrate of a display device, and containing 0.05-2.0 atom % of Ge, at least one element selected from among element group X (Ni, Ag, Co, Zn and Cu), and 0.02-2 atom % of at least one element selected from among element group Q consisting of the rare earth elements. A Ge-containing deposit and/or a Ge-concentrated part is present in the Al alloy film for a display device. Also specifically disclosed is a display device comprising the Al alloy film. | 2011-08-18 |
20110198603 | THIN FILM TRANSISTOR AND METHOD OF FORMING THE SAME - Disclosed are a thin film transistor and a method of forming the thin film transistor. | 2011-08-18 |
20110198604 | FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME - A method for fabricating a thin film transistor and a thin film transistor includes a polycrystalline silicon layer formed by irradiating an amorphous silicon layer with a laser beam through an organic layer formed on the amorphous silicon layer and removing the organic layer. | 2011-08-18 |
20110198605 | Termination Structure with Multiple Embedded Potential Spreading Capacitive Structures for Trench MOSFET and Method - A termination structure with multiple embedded potential spreading capacitive structures (TSMEC) and method are disclosed for terminating an adjacent trench MOSFET atop a bulk semiconductor layer (BSL) with bottom drain electrode. The BSL has a proximal bulk semiconductor wall (PBSW) supporting drain-source voltage (DSV) and separating TSMEC from trench MOSFET. The TSMEC has oxide-filled large deep trench (OFLDT) bounded by PBSW and a distal bulk semiconductor wall (DBSW). The OFLDT includes a large deep oxide trench into the BSL and embedded capacitive structures (EBCS) located inside the large deep oxide trench and between PBSW and DBSW for spatially spreading the DSV across them. In one embodiment, the EBCS contains interleaved conductive embedded polycrystalline semiconductor regions (EPSR) and oxide columns (OXC) of the OFLDT, a proximal EPSR next to PBSW is connected to an active upper source region and a distal EPSR next to DBSW is connected to the DBSW. | 2011-08-18 |
20110198606 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - An exemplary aspect of the present invention is a thin film transistor including: a gate electrode formed on a substrate; a gate insulating film that includes a nitride film and covers the gate electrode; and a semiconductor layer that is disposed to be opposed to the gate electrode with the gate insulating film interposed therebetween, and has a microcrystalline semiconductor layer formed in at least an interface in contact with the nitride film, in which the microcrystalline semiconductor layer contains oxygen at a concentration higher than that of contained nitrogen in at least the vicinity of the interface with the nitride film, the nitrogen being diffused from the nitride film. | 2011-08-18 |
20110198607 | THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, DISPLAY DEVICE, AND ELECTRONIC APPARATUS - A thin-film transistor manufactured on a transparent substrate has a structure of a top gate type crystalline silicon thin-film transistor in which a light blocking film, a base layer, a crystalline silicon film, a gate insulating film, and a gate electrode film arranged not to overlap at least a channel region are sequentially formed on the transparent substrate. The channel region has channel length L, LDD regions having LDD length d on both sides of the channel region, a source region, and a drain region are formed in the crystalline silicon film. The light blocking film is divided across the channel region. Interval x between the divided light blocking films is equal to or larger than channel length L and equal to or smaller than a sum of channel length L and a double of LDD length d (L+2d), allowing low the manufacturing cost and suppressed photo leak current. | 2011-08-18 |
20110198608 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE - A semiconductor device includes a thin film transistor and a thin film diode on a same substrate. A semiconductor layer ( | 2011-08-18 |
20110198609 | Light-Emitting Devices with Through-Substrate Via Connections - Multiple through-substrate vias (TSVs) are used to make electrical connections for an LED formed over a substrate. A first TSV extends through the substrate from a back surface of the substrate to the front surface of the substrate and includes a first TSV conductor that electrically connects to a first cladding layer of the LED. A second TSV extends through the substrate and an active layer of the LED from the back surface of the substrate to a second cladding layer or an ITO layer. The second TSV includes an isolation layer that electrically isolates a second TSV conductor from the first cladding layer and the active layer. Additionally dummy TSVs may be formed to conduct heat away from the LED optionally through a package substrate. | 2011-08-18 |
20110198610 | NITRIDE SEMICONDUCTOR CRYSTAL, MANUFACTURING METHOD OF THE NITRIDE SEMICONDUCTOR FREESTANDING SUBSTRATE AND NITRIDE SEMICONDUCTOR DEVICE - To provide a nitride semiconductor crystal, comprising: laminated homogeneous nitride semiconductor layers, with a thickness of 2 mm or more, wherein the laminated homogeneous nitride semiconductor layers are constituted so that a nitride semiconductor layer with low dopant concentration and a nitride semiconductor layer with high dopant concentration are alternately laminated by two cycles or more. | 2011-08-18 |
20110198611 | III-Nitride Power Device with Solderable Front Metal - Some exemplary embodiments of a III-nitride power device including a HEMT with multiple interconnect metal layers and a solderable front metal structure using solder bars for external circuit connections have been disclosed. The solderable front metal structure may comprise a tri-metal such as TiNiAg, and may be configured to expose source and drain contacts of the HEMT as alternating elongated digits or bars. Additionally, a single package may integrate multiple such HEMTs wherein the front metal structures expose alternating interdigitated source and drain contacts, which may be advantageous for DC-DC power conversion circuit designs using III-nitride devices. By using solder bars for external circuit connections, lateral conduction is enabled, thereby advantageously reducing device Rdson. | 2011-08-18 |
20110198612 | SIC SEMICONDUCTOR DEVICE HAVING CJFET AND METHOD FOR MANUFACTURING THE SAME - A SiC semiconductor device includes: a SiC substrate made of intrinsic SiC having semi-insulating property; first and second conductive type SiC layers disposed in the substrate; an insulation separation layer made of intrinsic SiC for isolating the first conductive type SiC layer from the second conductive type SiC layer; first and second conductive type channel JFETs disposed in the first and second conductive type SiC layers, respectively. The first and second conductive type channel JFETs provide a complementary junction field effect transistor. Since an electric element is formed on a flat surface, a manufacturing method is simplified. Further, noise propagation at high frequency and current leakage at high temperature are restricted. | 2011-08-18 |
20110198613 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - The leakage current generated in a pn junction region between a gate and a source is reduced in a junction FET using a silicon carbide substrate. In a trench junction FET using a silicon carbide substrate, nitrogen is introduced into a sidewall and a bottom surface of a trench, thereby forming an n type layer and an n | 2011-08-18 |
20110198614 | METHOD AND APPARATUS FOR MANUFACTURING A SiC SINGLE CRYSTAL FILM - A manufacturing method for a SiC single crystal film which allows stable growth of a SiC epitaxial film with a low doping concentration on a substrate with a diameter of at least 2 inches by the LPE method using a SiC solution in solvent of a melt includes an evacuation step in which the interior of a crystal growth furnace is evacuated with heating until the vacuum pressure at the crystal growth temperature is 5×10 | 2011-08-18 |
20110198615 | High-Sensitivity, High-Resolution Detector Devices and Arrays - Avalanche amplification structures including electrodes, an avalanche region, a quantifier, an integrator, a governor, and a substrate arranged to detect a weak signal composed of as few as several electrons are presented. Quantifier regulates the avalanche process. Integrator accumulates a signal charge. Governor drains the integrator and controls the quantifier. Avalanche amplifying structures include: normal quantifier, reverse bias designs; normal quantifier, normal bias designs; lateral quantifier, normal bias designs; changeable quantifier, normal bias, adjusting electrode designs; normal quantifier, normal bias, adjusting electrode designs; and lateral quantifier, normal bias, annular integrator designs. Avalanche amplification structures are likewise arranged to provide arrays of multi-channel devices. The described invention is expected to be used within photodetectors, electron amplifiers, chemical and biological sensors, and chemical and biological chips with lab-on-a-chip applications. Structures have immediately applicability to devices critical to homeland defense. | 2011-08-18 |
20110198616 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - Each unit cell includes: a drift layer | 2011-08-18 |
20110198617 | ELECTRODE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - Disclosed is a semiconductor device comprising a p-type SiC semiconductor and an ohmic electrode having an Ni/Al laminated structure provided on the p-type SiC semiconductor. The semiconductor device simultaneously has improved contact resistance and surface roughness in the ohmic electrode. The semiconductor device comprises an ohmic electrode ( | 2011-08-18 |
20110198618 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Disclosed is a light emitting device. The light emitting device includes a light emitting structure layer including a first semiconductor layer, an active layer, and a second semiconductor layer, an electrode electrically connected to the first semiconductor layer, an electrode layer under the light emitting structure layer, and a conductive support member under the electrode layer. The conductive support member includes a protrusion projecting from at least one edge. | 2011-08-18 |
20110198619 | LIGHT EMITTING DIODE ASSEMBLY HAVING IMPROVED LIGHTING EFFICIENCY - A light emitting diode assembly is disclosed in the present invention. The light emitting diode assembly has a substrate and several light emitting diode units. It can also include several light emitting diode units fabricated on cavities formed in the substrate. Any light emitting diode unit is composed of a light emitting diode chip covered with a phosphor layer for providing light beams, and a reflecting unit installed or formed on the substrate, coated with a reflective film, surrounding the light emitting diode chip for reflecting the light beams emitted from the light emitting diode chip, and directing the light beams upward. The light emitting diode unit further includes a light condenser provided above the light emitting diode chip for guiding the light beams upward. The assembly can collect all light beams emitted laterally. Hence, lighting efficiency for the light emitting diode assembly can be improved. | 2011-08-18 |
20110198620 | BARRIER FILM COMPOSITE AND DISPLAY APPARATUS INCLUDING THE BARRIER FILM COMPOSITE - A barrier film composite includes a decoupling layer and a barrier layer. The barrier layer includes a first region and a second region that is thinner than the first region. | 2011-08-18 |
20110198621 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, METHOD OF MANUFACTURING LIGHT EMITTING DEVICE AND LIGHTING SYSTEM - A light emitting device according to the embodiment includes a conductive support member; a light emitting structure on the conductive support member including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second semiconductor layers; and a protective device on the light emitting structure. | 2011-08-18 |
20110198622 | ORGANIC OPTO-ELECTRIC DEVICE AND A METHOD FOR MANUFACTURING AN ORGANIC OPTO-ELECTRIC DEVICE - An organic opto-electric device has a layer stack with a base electrode, an organic layer assembly, a cover electrode and a contact layer. The organic layer assembly is arranged between the base electrode and the cover electrode and the cover electrode is arranged between the organic layer assembly and the contact layer. The cover electrode and the base electrode are structured to form several laterally adjacent optically active areas and the base electrode, the organic layer assembly, the cover electrode and the contact layer are interconnected by vias such that at least two optically active areas are connected in series so that a current flow through the at least two optically active areas passes in a direction between the base electrode and a cover electrode. The current flow between the at least two optically active areas passes through the contact layer, wherein the contact layer contacts the base electrode above one of the vias laterally in the interior of the two optically active areas. | 2011-08-18 |
20110198623 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes an array of light emitting cells. Banks define each of the light emitting cells. The light emitting cells include a first light emitting cell that is located in a central region of the array and a second light emitting cell that is located in a peripheral region of the array. First and third banks border the first light emitting cell with the first bank being closer to a periphery of the array than the second bank. Second and fourth banks border the second light emitting cell with the third bank being closer to the periphery of the array than the fourth bank. An inclination angle of an innermost sidewall of the third bank that is adjacent the second light emitting cell is different than an inclination angle of an innermost sidewall of the first bank that is adjacent the first light emitting cell. | 2011-08-18 |
20110198624 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes an array of light emitting cells. Each light emitting cell includes first and second electrodes, and an organic light emitting layer located between the first and second electrodes. Banks are above the first electrode that partition the organic light emitting layer to define each of the light emitting cells. First and second light emitting cells are adjacent to one another and located in a peripheral region of the array. The first light emitting cell is closer to a center of the array than the second light emitting cell. A first bank borders the first light emitting cell and the second light emitting cell. An inclination angle of an innermost sidewall of the first bank that is adjacent the first light emitting cell is greater than an inclination angle of an outermost sidewall of the first bank that is adjacent the second light emitting cell. | 2011-08-18 |
20110198625 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE ARRAY - A nitride semiconductor light emitting device array, which includes a dielectric layer formed on a first conductivity lower nitride semiconductor layer, having a plurality of windows. Each of a plurality of hexagonal pyramid light emission structures is grown from a surface of the first conductivity lower nitride semiconductor layer exposed through each of the windows and onto a peripheral area of the window of the dielectric layer. Each of the hexagonal pyramid light emission structures includes a first conductivity upper nitride semiconductor layer, an active layer and a second conductivity nitride semiconductor layer formed in their order. The windows are disposed in such a triangular arrangement that side surfaces of the adjacent hexagonal pyramid light emission structures face each other. Also, a distance between bases of the adjacent hexagonal pyramid light emission structures is less than 0.3 times an interval between centers of the windows of the adjacent hexagonal pyramid light emission structures. | 2011-08-18 |
20110198626 | SUBSTRATE REMOVAL PROCESS FOR HIGH LIGHT EXTRACTION LEDS - A method for fabricating light emitting diode (LEDs) comprises providing a plurality of LEDs on a substrate wafer, each of which has an n-type and p-type layer of Group-III nitride material formed on a SiC substrate with the n-type layer sandwiched between the substrate and p-type layer. A conductive carrier is provided having a lateral surface to hold the LEDs. The LEDs are flip-chip mounted on the lateral surface of the conductive carrier. The SiC substrate is removed from the LEDs such that the n-type layer is the top-most layer. A respective contact is deposited on the n-type layer of each of the LEDs and the carrier is separated into portions such that each of the LEDs is separated from the others, with each of the LEDs mounted to a respective portion of said carrier. | 2011-08-18 |
20110198627 | Organic Optoelectronic Device And A Method For Encapsulating Said Device - The invention relates to an organic optoelectronic device, such as a display, lighting or signalling device, that is protected from the ambient air by a sealed encapsulation in the form of a thin film, and to a method for encapsulating such a device. An optoelectronic device ( | 2011-08-18 |
20110198628 | MULTI-CHIP LED PACKAGE - A multichip light-emitting-diode (LED) package includes a printed circuit board (PCB) having a tapered via hole and a circuit interconnection line on a surface of the PCB. An inclined surface of each via hole is used as a reflection plate reflecting light emitted by an LED chip located in the via hole. Each LED chip is directly bonded to a metal base for radiating heat. Additional heat radiation structures and reflection plates are not required, thus simplifying the structure of and manufacture of the multichip LED package, reducing manufacturing costs. | 2011-08-18 |