| 30th week of 2012 patent applcation highlights part 42 |
| Patent application number | Title | Published |
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| 20120190089 | ENGINEERED MICROOGRANISMS CAPABLE OF PRODUCING TARGET COMPOUNDS UNDER ANAEROBIC CONDITIONS - The present invention is generally provides recombinant microorganisms comprising engineered metabolic pathways capable of producing C3-C5 alcohols under aerobic and anaerobic conditions. The invention further provides ketol-acid reductoisomerase enzymes which have been mutated or modified to increase their NADH-dependent activity or to switch the cofactor preference from NADPH to NADH and are expressed in the modified microorganisms. In addition, the invention provides isobutyraldehyde dehydrogenase enzymes expressed in modified microorganisms. Also provided are methods of producing beneficial metabolites under aerobic and anaerobic conditions by contacting a suitable substrate with the modified microorganisms of the present invention. | 2012-07-26 |
| 20120190090 | MICROBIAL CONVERSION OF PLANT BIOMASS TO ADVANCED BIOFUELS - The invention provides consolidated bioprocessing methods and host cells. The host cells are capable of directly converting biomass polymers or sunlight into alcohols or branched-chain hydrocarbons. In particular, the invention provides a method for producing alcohols or branched-chain hydrocarbons from a biomass polymer, including providing a genetically engineered host cell, culturing the host cell in a medium containing a biomass polymer as a carbon source such that recombinant nucleic acids in the cell are expressed, and extracting alcohols or branched-chain hydrocarbons from the culture. | 2012-07-26 |
| 20120190091 | LIQUID-PHASE AND VAPOR-PHASE DEHYDRATION OF ORGANIC / WATER SOLUTIONS - Disclosed herein are processes for removing water from organic compounds, especially polar compounds such as alcohols. The processes include a membrane-based dehydration step, using a membrane that has a dioxole-based polymer selective layer or the like and a hydrophilic selective layer, and can operate even when the stream to be treated has a high water content, such as 10 wt % or more. The processes are particularly useful for dehydrating ethanol. | 2012-07-26 |
| 20120190092 | Processes And Systems For Enzymatically Isolating Lignin And Other Bioproducts From Herbaceous Plants - Methods for enzymatically isolating lignin and other bioproducts, such as fermentable sugars, from herbaceous plant materials, are described. The methods can provide improvements, such as increased product purity and reduced process energy requirements and product modifications and contamination. Systems for practicing the methods also are provided. | 2012-07-26 |
| 20120190093 | METHOD FOR PRODUCING B-GLUCANASE AND XYLANASE USING FUNGUS BODY DEBRIS, AND LIQUID CULTURE MEDIUM - Disclosed is production of cellulase having excellent ability to decompose cellulosic resources containing xylan at low cost. | 2012-07-26 |
| 20120190094 | Photoreactive Regulator of Protein Function and Methods of Use Thereof - The present invention provides a synthetic regulator of protein function, which regulator is a light-sensitive regulator. The present invention further provides a light-regulated polypeptide that includes a subject synthetic regulator. Also provided are cells and membranes comprising a subject light-regulated polypeptide. The present invention further provides methods of modulating protein function, involving use of light. The present invention further provides methods of identifying agents that modulate protein function. | 2012-07-26 |
| 20120190095 | Composition For Treatment of Neurodegenerative Diseases or Disorders, Method and Use Comprising Electromagnetically Irradiated Yeast - Provided is a composition which comprises yeast cells treated with, or grown from yeast cells treated with electromagnetic waves in the range of 30 GHz to 300 GHz. Said composition may be used for the treatment of neurodegenerative diseases or disorders. A method relating to the composition is also provided. | 2012-07-26 |
| 20120190096 | MATERIALS AND METHODS FOR CONJUGATING A WATER SOLUBLE FATTY ACID DERIVATIVE TO A PROTEIN - The invention relates to materials and methods of conjugating a water soluble fatty acid derivative to a therapeutic protein comprising contacting the therapeutic protein with an activated water soluble fatty acid derivative under conditions that allow conjugation. | 2012-07-26 |
| 20120190097 | ANIONIC-CORE COMPOSITION FOR DELIVERY OF THERAPEUTIC AGENTS, AND METHODS OF MAKING AND USING THE SAME - The present invention is directed to compositions comprising a polymer backbone with protective chain and anionic groups, and a cationic therapeutic agent. The present invention is directed to compositions for treating infections, inflammatory diseases, excess growth, and damaged cells and organs. | 2012-07-26 |
| 20120190098 | FLUOROGENIC COMPOUNDS CONVERTED TO FLUOROPHORES BY PHOTOCHEMICAL OR CHEMICAL MEANS AND THEIR USE IN BIOLOGICAL SYSTEMS - Fluorophores derived from photoactivatable azide-pi-acceptor fluorogens or from a thermal reaction of an azide-pi-acceptor fluorogen with an alkene or alkyne are disclosed. Fluorophores derived from a thermal reaction of an alkyne-pi-acceptor fluorogen with an azide are also disclosed. The fluorophores can readily be activated by light and can be used to label a biomolecule and imaged on a single-molecule level in living cells. | 2012-07-26 |
| 20120190099 | Methods for Enhancing the Degradation or Conversion of Cellulosic Material - The present invention relates to methods for degrading or converting a cellulosic material and for producing a substance from a cellulosic material. | 2012-07-26 |
| 20120190100 | ENZYMATIC COMPOSITION FOR THE DIGESTION OF CHICKEN EMBRYOS - The present invention relates to an enzymatic composition for the digestion of chicken embryos intended to the preparation of cells which are used for the production of viruses. The present invention also relates to a method for producing a wild type, an attenuated and/or a recombinant virus comprising a step of preparation of cells from chicken embryos using an enzymatic composition of the invention. The present invention relates to a purified wild type, attenuated and/or recombinant virus obtained and to a pharmaceutical composition, preferably a vaccine, comprising said virus for the treatment and/or the prevention a cancer, an infectious disease and/or an autoimmune disorder, and uses thereof. | 2012-07-26 |
| 20120190101 | BIOLOGICAL OXIDATION OF HYDROGEN SULPHIDE IN A PSYCHROPHILIC ANAEROBIC DIGESTION BIOREACTOR SUBJECTED TO MICROAEROBIC CONDITIONS - A biological process for removing hydrogen sulphide from biogas is disclosed. The process involves injecting a small quantity of air into the gas phase or the liquid phase of a psychrophilic bioreactor to allow microbial flora to convert the hydrogen sulphide into elemental sulphur. | 2012-07-26 |
| 20120190102 | SYSTEMS AND METHODS FOR PROCESSING MIXED SOLID WASTE - Solid waste that includes a mixture of wet organic material and dry organic material can be are separated using mechanical separation to produce a wet organic stream enriched in wet organics and a dry organic stream enriched in dry organics. The separated wet organic stream and dry organic stream are separately converted to renewable or recyclable products using different conversion techniques particularly suited for the separated wet and dry organic streams. | 2012-07-26 |
| 20120190103 | DEVICE FOR THE TREATMENT OF BIOLOGICAL FLUID - The invention relates to a device ( | 2012-07-26 |
| 20120190104 | MEMS Particle sorting actuator and method of manufacturing - A MEMS-based system and a method are described for separating a target particle from the remainder of a fluid stream. The system makes use of a unique, microfabricated movable structure formed on a substrate, which moves in a rotary fashion about one or more fixed points, which are all located on one side of the axis of motion. The movable structure is actuated by a separate force-generating apparatus, which is entirely separate from the movable structure formed on its substrate. This allows the movable structure to be entirely submerged in the sample fluid. | 2012-07-26 |
| 20120190105 | Cartridge for MEMS particle sorting system - A disposable cartridge is described which is compatible with a MEMS particle sorting device. The disposable cartridge may include passageways which connect fluid reservoirs in the cartridge with corresponding microfluidic passageways on the MEMS chip. A flexible gasket may prevent leakages and allow the fluid to cross the gasket barrier through a plurality of holes in the gasket. Vents and septums may also be included to allow air to escape and fluids to be inserted by hypodermic needle. A MEMS-based particle sorting system using the disposable cartridge is also described. | 2012-07-26 |
| 20120190106 | Promoter System for Regulatable Gene Expression in Mammalian Cells - The present invention is directed to a bidirectional human cytomegalovirus (hCMV) promoter that can be used to promote transcription on both strands of a double stranded DNA molecule. When used as part of a system that includes tet operator and the gene coding for the tet repressor, the promoter can be used to induce mammalian gene expression in a highly regulated way. | 2012-07-26 |
| 20120190107 | ENHANCED PROTEIN TRANSDUCTION - Methods of enhanced protein transduction are provided. Aspects of the methods include contacting a cell with a transduction protein, where the transduction protein includes both a protein-of-interest domain and a protein transduction domain, and a nucleic acid transfection agent. Also provided are systems and kits that find use in practicing methods according to embodiments of the invention. The methods, systems and kits find use in a variety of different applications. | 2012-07-26 |
| 20120190108 | NEURONAL PROGENITOR CELLS AND METHODS OF DERIVATION AND PURIFICATION OF NEURONAL PROGENITOR CELLS FROM EMBRYONIC STEM CELLS - The invention provides neuronal progenitor cells, populations and cultures of cells, cell compositions and methods of producing neuronal progenitor cells. Neuronal progenitor cells can be prepared from embryonic stem cells, such as human embryonic cells. | 2012-07-26 |
| 20120190109 | Process for Obtaining Myofibroblasts - The invention relates to a process for obtention of myofibroblasts. According to this process:
| 2012-07-26 |
| 20120190110 | IMMUNOLOGICAL USES OF IMMUNOMODULATORY COMPOUNDS FOR VACCINE AND ANTI-INFECTIOUS DISEASE THERAPY - Methods of enhancing immune response to an immunogen in a subject are disclosed. Also disclosed are methods of reducing the sensitivity to an allergen in a subject. The methods comprise the administration of an immunomodulatory compound in specific dosing regimens that result in enhanced immune response or reduced sensitivity. | 2012-07-26 |
| 20120190111 | Differentiation of Pluripotent Stem Cells - The present invention is directed to methods to differentiate pluripotent stem cells. In particular, the present invention is directed to methods and compositions to differentiate pluripotent stem cells into cells expressing markers characteristic of the definitive endoderm lineage comprising culturing the pluripotent stem cells in medium comprising a sufficient amount of GDF-8 to cause the differentiation of the pluripotent stem cells into cells expressing markers characteristic of the definitive endoderm lineage. | 2012-07-26 |
| 20120190112 | Differentiation of Pluripotent Stem Cells - The present invention is directed to methods to differentiate pluripotent stem cells. In particular, the present invention is directed to methods and compositions to differentiate pluripotent stem cells into cells expressing markers characteristic of the definitive endoderm lineage comprising culturing the pluripotent stem cells in medium comprising a sufficient amount of GDF-8 to cause the differentiation of the pluripotent stem cells into cells expressing markers characteristic of the definitive endoderm lineage. | 2012-07-26 |
| 20120190113 | Macroporous Microcarrier Specific to Liver Cell, Preparation Method and Use Thereof - The present invention provides a macroporous microcarrier specific to hepatocytes using silk fibroin and galactosylated chitosan as main raw material, a preparation method thereof, and application for hepatocyte culture under the culture condition of microgravity rotation. The macroporous microcarrier s a sphere prepared from silk fibroin and galactosylated chitosan under the effect of crosslinker, wherein based on the total weight of the sphere, the content of silk fibroin is 50-80 wt % and the content of galactosylated chitosan is 15-40 wt %. The diameter of the microcarrier is 200-500 μm, and the aperture of the microcarrier is 40-80 μm. Compared with normal solid scaffold material, the microcarrier provided by the present invention has larger surface area/volume ratio and, a sinus gap structure extremely similar with in-vivo liver sinus structure, therefore it is more conducive to adhering of the hepatocytes on the scaffold material, contacting between cells, transporting oxygen and nutrient components and excreting metabolic products. | 2012-07-26 |
| 20120190114 | SILICON-INCORPORATED DIAMOND-LIKE CARBON FILM, FABRICATION METHOD THEREOF, AND ITS USE - A silicon-incorporated diamond-like carbon thin film, a fabrication method thereof, and its use are disclosed. The silicon-incorporated diamond-like carbon thin film comprises a chemical bond between carbon and silicon atoms present on a surface of the silicon-incorporated diamond-like carbon thin film comprising silicon incorporated within and on the surface thereof with an atom providing hydrophilicity to the surface of the thin film on the surface of the thin film. | 2012-07-26 |
| 20120190115 | Genes for Enhanced Lipid Metabolism for Accumulation of Lipids - Provided herein are exemplary genes, constructs and methods for the formation of triacylglycerols (TAGs). The exemplary genes include a phosphatic acid phosphohydrolase (PA Hydrolase) gene, a diacylglycerol o-acyltransferase (DAGAT2A) gene, and a phospholipid:diacylglycerol acyltransferase (LROI) gene. | 2012-07-26 |
| 20120190116 | PROCESS FOR CHROMOSOMAL INTEGRATION AND DNA SEQUENCE REPLACEMENT IN CLOSTRIDIA - The present invention is related to a new method for replacing or deleting DNA sequences in Clostridia, with high efficiency, easy to perform and applicable at an industrial level. This method is useful to modify several genetic loci in Clostridia in a routine manner. This method is based on a replicative vector carrying at least two marker genes. | 2012-07-26 |
| 20120190117 | CATALYST FORMULATION FOR HYDROGENATION - A method of screening catalysts for liquid-phase selective hydrogenation by preparing a test catalyst by adding a promoter to a reference catalyst; preparing a liquid reactant stream comprising C | 2012-07-26 |
| 20120190118 | COMPONENT HAVING A PROTECTIVE LAYER THAT CAN BE MONITORED MAGNETICALLY AND METHOD FOR OPERATING A COMPONENT - A component for high-temperature use comprises a metallic base material and a non-ferromagnetic protective layer arranged thereon, which is able to form a protective oxide layer on the component surface at temperatures between 600° C. and 1100° C. A sensor material is introduced into the protective layer, wherein, in the stated temperature range, the local magnetism, notably ferromagnetism or ferrimagnetism, at the site of the sensor material is dependent on the local concentration and/or composition of the material of the protective layer in the immediate vicinity of the sensor material and/or on the cumulative temperature-time curve at the site of the sensor material. The component can be examined non-destructively, from the outside, for the local magnetism in the protective layer, which is typically between 100 μm and 500 μm thick. | 2012-07-26 |
| 20120190119 | METHOD AND SYSTEM FOR MODULATING SUBSTANCES IN THE FORMATION VITAMINS - A method for establishing a treatment for promoting the formation of Vitamins in an individual. The measured or assessed level of substances in the body are compared in order to determine the treatment to provide to an individual. | 2012-07-26 |
| 20120190120 | PROTEIN DETECTION REAGENTS AND METHODS WITH DYES AND DEXTRINS - The invention provides reagents, methods and kits for detection of proteins and quantitative determination of protein concentration. The reagents comprise a protein-complexing dye, such as a Coomassie dye and one or more dextrins, for the elimination of interference caused by detergents. | 2012-07-26 |
| 20120190121 | METHODS FOR DETECTING DIHYDROXYVITAMIN D METABOLITES BY MASS SPECTROMETRY - Provided are methods of detecting the presence or amount of a dihydroxyvitamin D metabolite in a sample using mass spectrometry. The methods generally comprise ionizing a dihydorxyvitamin D metabolite in a sample and detecting the amount of the ion to determine the presence or amount of the vitamin D metabolite in the sample. In certain preferred embodiments the methods include immunopurifying the dihydroxyvitamin D metabolites prior to mass spectrometry. Also provided are methods to detect the presence or amount of two or more dihydroxyvitamin D metabolites in a single assay. | 2012-07-26 |
| 20120190122 | Low volume liquid specimen apportionment device and method - A liquid specimen collecting and testing device has two chambers, a first for collecting a liquid specimen and a second for exposing a measured volume preliminary screening aliquot of the specimen to preliminary screening test strips. The first chamber has a catch basin of defined volume which is less than the sample volume. The basin is simultaneously sealed from the rest of the first chamber, thus separating and apportioning the measured volume preliminary screening aliquot from the collected volume. Simultaneously, an opening made leading from the basin to the second chamber initiating the preliminary screening test. Thus intermingling of a preliminary screening aliquot and a remainder aliquot is avoided. | 2012-07-26 |
| 20120190123 | STRUCTURAL ANALYSIS DEVICE AND STRUCTURAL ANALYSIS METHOD - A molecular structure analysis device of at least one embodiment of the present invention includes: a light source for illuminating, with exciting light, a measurement sample including a molecule to be structurally analyzed to which molecule a rare earth complex is bonded; a measurement section for receiving light emitted from the measurement sample and for measuring intensities of spectra of the light; a calculation section for performing normalization in which intensities of spectra including a line spectrum due to electric dipole transition among the measured intensities of the spectra of the light are normalized by an intensity at one wavelength in a line spectrum due to magnetic dipole transition; and an output section for outputting the spectra whose intensities have been normalized. This makes it possible to attain a device and a method capable of analyzing minute change in a dynamic structure of the molecule. | 2012-07-26 |
| 20120190124 | Reversible Covalent Linkage of Functional Molecules - The present invention relates to the use of a compound containing a moiety of formula (I) as a reagent for linking a compound of formula R | 2012-07-26 |
| 20120190125 | WATER-SOLUBLE SILSESQUIOXANES AS ORGANIC QUANTUM DOTS FOR SENSING AND IMAGING - This invention includes a compound represented by the following structural formula (I) or an acceptable salt thereof. | 2012-07-26 |
| 20120190126 | MICROFLUIDIC TRANSDUCER - Provided herein are apparatuses and methods for fragmenting nucleic acids or disrupting cells. For example, some embodiments provide a disposable microfluidic device designed to position a sample to be in direct contact with a high frequency vibrating element that emits an ultrasonic frequency into the sample such that the vibrational energy transduced into the sample results in fragmenting nucleic acids or disrupting cells. | 2012-07-26 |
| 20120190127 | SYSTEMS AND METHODS FOR DETERMINING PROCESS CONDITIONS IN CONFINED VOLUMES - Systems and methods for the determination of properties in confined (volumes are generally described. Generally, a gradient in at least one parameter (e.g., temperature) may be established across a plurality of confined volumes. In addition, at least one property (e.g., whether a crystal has been formed in the confined volume) of an interaction in at least one confined volume may be determined. In some embodiments, based upon the property determining step, a relationship between at least one parameter and at least one property may be determined. The confined volumes in which crystals may be contained may include, but are not limited to, droplets, microwells, and the like. | 2012-07-26 |
| 20120190128 | MODULAR MICROFLUIDIC SAMPLE PREPARATION SYSTEM AND METHOD OF MIXING AND DELIVERING A SAMPLE FLUID - A modular microfluidic sample preparation system ( | 2012-07-26 |
| 20120190129 | TEST DEVICE, REACTION APPARATUS AND REACTIVE TEST METHOD - A test device having a micro flow channel including a reaction part where a reactant that is reactive to a tested chemical dispersed in a tested fluid is fixed, and at least one actuator for actuating the tested fluid to move in at least one of two opposite sides of the micro flow channel so as to homogenize a density distribution of the tested chemical in the tested fluid. The tested fluid is sent in the micro flow channel a plurality of times. | 2012-07-26 |
| 20120190130 | CARTRIDGE FOR DETECTING TARGET ANTIGEN AND METHOD FOR DETECTING TARGET ANTIGEN USING THE SAME - There are provided a cartridge for detecting a target antigen and a method for detecting a target antigen existing in a biological sample using the cartridge. In the cartridge, multiple detections of various antigens can be rapidly and conveniently performed, and a plurality of target antigens can be quantitatively analyzed using one cartridge, thereby reducing time and cost. | 2012-07-26 |
| 20120190131 | Biosensor Electronics - The electrostatic resonators of bridge, cantilever and comb type or piezoelectric resonators with detection electronics are key components of chemical, biological, biochemical and biomedical sensors with sensitivity down to the single molecule detection of ligands. The detection electronics relies on measurement of frequency changes of resonators using phase or signal comparator. The large arrays of these sensors with individual or common sensing circuitry improve detection sensitivity, selectivity and lower incidence of false positives and negatives. | 2012-07-26 |
| 20120190132 | Device and method of monitoring a patient - A device for remote management of patients suffering or likely to suffer from heart failure that can measure the amplitude and frequency changes of one or more biomarkers. The device aids in predicting the need for medical intervention in such patients. The device may further aid in monitoring the efficacy and safety of treatment in such patients. | 2012-07-26 |
| 20120190133 | THROUGH SILICON VIA REPAIR - Methods and systems for altering the electrical resistance of a wiring path. The electrical resistance of the wiring path is compared with a target electrical resistance value. If the electrical resistance of the wiring path exceeds the target electrical resistance value, an electrical current is selectively applied to the wiring path to physically alter a portion of the wiring path. The current may be selected to alter the wiring path such that the electrical resistance drops to a value less than or equal to the target electrical resistance value. | 2012-07-26 |
| 20120190134 | SEM REPAIR FOR SUB-OPTIMAL FEATURES - A method and system for repairing photomasks is disclosed. A scanning electron microscope (SEM) is used to identify, measure, and correct defects. The SEM is operated in multiple modes, including a measuring mode and a repair mode. The repair mode is of higher landing energy and exposure time than the measuring mode, and induces shrinkage in the photoresist to correct various features, such as vias that are too small. | 2012-07-26 |
| 20120190135 | MANUFACTURING METHOD AND MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE - According to the embodiment, a manufacturing method for a semiconductor device includes detecting a sectional shape of an ion beam irradiated onto a semiconductor substrate and a beam current of the ion beam, calculating a beam current density which is the beam current per unit area based on the beam shape and the beam current detected in the detecting, and adjusting the ion beam based on the beam current density calculated in the calculating. | 2012-07-26 |
| 20120190136 | METHOD AND APPARATUS FOR MANUFACTURING LED DEVICE - An apparatus and method of manufacturing a light emitting diode (LED) device, and more particularly, an apparatus and method of manufacturing an LED device by dispensing a fluorescent solution prepared by mixing a fluorescent material with a liquid synthetic resin, onto an LED chip. An apparatus and method of manufacturing an LED device, whereby an appropriate amount of fluorescent solution simultaneously in consideration of several factors, such as characteristics of an LED chip and viscosity of the fluorescent solution may be dispensed onto the LED chip, is provided. An apparatus and method of manufacturing an LED device, whereby an appropriate amount of fluorescent solution may be calculated actively in consideration of viscosity of the fluorescent solution, a change in characteristics of an LED chip, or the like, and the appropriate amount of fluorescent solution may be dispensed onto the LED chip, is provided. | 2012-07-26 |
| 20120190137 | CROSS SECTION OBSERVATION METHOD - Provided is a cross section observation method, including the steps of: forming a marker layer at a base material, the marker layer having a conductivity different from that of another portion of the base material; forming a sample, by performing treatment on the base material at which the marker layer is formed; and detecting secondary electrons generated by emitting electrons to a cross section of the sample. | 2012-07-26 |
| 20120190138 | SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR SUBSTRATE BONDING METHOD - According to one embodiment, semiconductor manufacturing apparatus includes a first member that holds a first semiconductor substrate; a second member that holds a second semiconductor substrate in a state where a bonding surface of the second semiconductor substrate faces a bonding surface of the first semiconductor substrate; a distance detecting unit that detects a distance between the bonding surface of the first semiconductor substrate and the bonding surface of the second semiconductor substrate; an adjusting unit that adjusts the distance between the bonding surface of the first semiconductor substrate and the bonding surface of the second semiconductor substrate to a predetermined value by moving at least one of the first and second members based on a detection result of the distance detecting unit; and a third member that forms the bonding start point between the first semiconductor substrate and the second semiconductor substrate. | 2012-07-26 |
| 20120190139 | PREPARATION METHOD FOR REDUCED GRAPHENE OXIDE USING SULFONYL HYDRAZIDE-BASED REDUCING AGENT AND OPTOELECTRONIC DEVICES THEREOF - A method for fabricating a graphene thin film by reducing graphene oxide and a method for fabricating an optoelectronic device using the same are provided. The method for fabricating a graphene thin film comprises: (a) preparing graphene oxide; (b) preparing graphene through reducing the graphene oxide by a sulfonyl hydrazide-based reducing agent; (c) preparing a graphene dispersed solution by dispersing the graphene into an organic solvent; and (d) fabricating a graphene thin film by applying the graphene dispersed solution. The sulfonyl hydrazide-based reducing agent may be a compound having a sulfonyl hydrazide substituent of Chemical Formula 1 in the present disclosure in which A may be any one in Chemical Formula 2 in the present disclosure. | 2012-07-26 |
| 20120190140 | Light-Emitting Diode Arrangement and Method for Producing the Same - A light-emitting diode arrangement comprising a plurality of semiconductor chips which are provided for emitting electromagnetic radiation from their front side and which are fixed by their rear side—opposite the front side—on a first main face of a common carrier body, wherein the semiconductor chips consist of a respective substrateless semiconductor layer stack and are fixed to the common carrier body without an auxiliary carrier, and to a method for producing such a light-emitting diode arrangement. | 2012-07-26 |
| 20120190141 | METHOD FOR MANUFACTURING POLYCHROMATIC LIGHT EMITTING DIODE DEVICE HAVING WAVELENGTH CONVERSION LAYER MADE OF SEMICONDCUTOR - A method for manufacturing a polychromatic light emitting diode device, comprising steps of providing an epitaxial substrate and forming a multiple semiconductor layer on the epitaxial substrate, wherein the multiple semiconductor layer comprises an n-type semiconductor layer, a p-type semiconductor layer and an active layer. The active layer emits light of a first wavelength. Thereafter a first wavelength conversion layer is formed on the multiple semiconductor layer. The first wavelength conversion layer is made of semiconductor and absorbs a portion of the light of a first wavelength and emits light of a second wavelength, wherein the second wavelength is longer than the first wavelength. | 2012-07-26 |
| 20120190142 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a light emitting device and a method of manufacturing the same. The light emitting device comprises a transparent substrate, an n-type compound semiconductor layer formed on the transparent substrate, an active layer, a p-type compound semiconductor layer, and a p-type electrode sequentially formed on a first region of the n-type compound semiconductor layer, and an n-type electrode formed on a second region separated from the first region of the n-type compound semiconductor layer, wherein the p-type electrode comprises first and second electrodes, each electrode having different resistance and reflectance. | 2012-07-26 |
| 20120190143 | METHOD FOR FABRICATING LIQUID CRYSTAL DISPLAY DEVICE - A method of fabricating an LCD device is discussed. The method in one embodiment includes: forming a gate electrode and a gate pad on a substrate, which is defined into a display area corresponding to pixel regions and a non-display area corresponding to pad regions, through a first mask process; sequentially stacking a gate insulation film, an amorphous silicon layer, an impurity-doped amorphous silicon layer and a metal film on the substrate provided with the gate electrode and then forming an active layer, source/drain electrode and a data line through a second mask process which uses one of half-tone and diffraction masks; and forming a transparent conductive material on the substrate provided with the source/drain electrode and forming a pixel electrode through a third mask process. | 2012-07-26 |
| 20120190144 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME TO PREVENT DAMAGE TO AN INTERLAYER - An organic light emitting display device prevents damage to an interlayer including an emitting layer and reduces IR drop in face electrodes, and a method of manufacturing the same. The organic light emitting display device includes: a substrate; a pixel electrode disposed on the substrate; an interlayer comprising an emitting layer disposed on the pixel electrode; a face electrode on the interlayer; and a sealing member disposed on the face electrodes, wherein the sealing member and the face electrode are bent along a curve of an upper portion of a layer below the face electrode so as to prevent a gap between the sealing member and the face electrode, and between the face electrode and the layer below the face electrode. | 2012-07-26 |
| 20120190145 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method of forming a display device including source/drain electrodes on a substrate, a pixel electrode, an insulating partition wall layer, a channel-region semiconductor layer. Source/drain electrodes of a thin-film transistor are formed on the substrate, while a pixel electrode is connected to the source/drain electrodes. The insulating partition wall layer is formed on the substrate, where the partition wall layer has a first opening extending to between the source electrode and the drain electrode. Furthermore, a channel-region semiconductor layer is formed by depositing a semiconductor layer over the partition wall layer. The channel-region semiconductor layer is on the bottom of the first opening to be separate from a upper part of the partition wall layer. | 2012-07-26 |
| 20120190146 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMMITING DEVICE - According to one embodiment, in a method for manufacturing a semiconductor light emitting device, a transparent conductive film is formed on a semiconductor laminated body of a multilayer structure containing a light emitting unit. The transparent conductive film is a film transmissive to a light of a luminescence wavelength from the light emitting unit. A mask is formed on the portion of the transparent conductive film. The transparent conductive film is removed by wet etching through the mask so as to expose the semiconductor laminated body. The semiconductor laminated body is removed by anisotropically etching through the mask so as to remove the light emitting unit. The mask is removed. A first electrode is formed on the portion of the semiconductor laminated body exposed after removing the light emitting unit. A second electrode is formed on the portion of the transparent conductive film. | 2012-07-26 |
| 20120190147 | METHOD OF MANUFACTURING SEMICONDUCTOR OPTICAL ELEMENT - A method of manufacturing a semiconductor optical element having an active layer containing quantum dots, in which density of the quantum dots in a resonator direction in a portion of the active layer in which density of photons is high, relative to the density of the quantum dots in a portion of the active layer in which the density of photons is relatively low, includes forming the quantum dots in the active layer so that the distribution density is uniform in a resonator direction; and diffusing or implanting an impurity non-uniformly in the resonator direction in the active layer in which quantum dots are uniformly distributed, thereby disordering some of the quantum dots and forming a non-uniform density distribution of the quantum dots in the resonator direction in the active layer | 2012-07-26 |
| 20120190148 | METHOD FOR LIFT-OFF OF LIGHT-EMITTING DIODE SUBSTRATE - The present invention discloses a method for lift-off of an LED substrate. By eroding the sidewall of a GaN epitaxial layer, cavity structures are formed, which may act in cooperation with a non-fully filled patterned sapphire substrate from epitaxial growth to cause the GaN epitaxial layer to separate from the sapphire substrate. The method according to an embodiment of the present invention can effectively reduce the dislocation density in the growth of a GaN-based epitaxial layer; improve lattice quality, and realize rapid lift-off of an LED substrate, and has the advantages including low cost, no internal damage to the GaN film, elevated performance of the photoelectric device and improved luminous efficiency. | 2012-07-26 |
| 20120190149 | CATALYTIC CVD EQUIPMENT, METHOD FOR FORMATION OF FILM, PROCESS FOR PRODUCTION OF SOLAR CELL, AND SUBSTRATE HOLDER - In a catalytic CVD equipment, a holder includes an antireflective structure for preventing reflection of a radiant ray that is ejected from the catalytic wire toward the side of the substrate. | 2012-07-26 |
| 20120190150 | DARK CURRENT REDUCTION IN BACK-ILLUMINATED IMAGING SENSORS - A back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate is disclosed. The device includes an insulator layer, a semiconductor substrate having an interface with the insulator layer, an epitaxial layer grown on the semiconductor substrate by epitaxial growth; and one or more imaging components in the epitaxial layer. The semiconductor substrate and the epitaxial layer exhibit a net doping concentration profile having a maximum value at a predetermined distance from the interface which decreases monotonically on both sides of the profile. The doping profile between the interface with the insulation layer and the peak of the doping profile functions as a “dead band” to prevent dark current carriers from penetrating to the front side of the device. | 2012-07-26 |
| 20120190151 | METHOD FOR THE ACTIVATION OF CdTe THIN FILMS FOR THE APPLICATION IN CdTe/CdS TYPE THIN FILM SOLAR CELLS - A method for activation of CdTe films used in CdTe/CdS type thin film solar cells is described, in which a CdTe film is treated with a mixture formed by a fluorine-free chlorinated hydrocarbon and a gaseous chlorine-free fluorinated hydrocarbon. The fluorine-free chlorinated hydrocarbon and the gaseous chlorine-free fluorinated hydrocarbon are harmless to the ozone layer. | 2012-07-26 |
| 20120190152 | Methods for Fabricating Integrated Passive Devices on Glass Substrates - A method includes forming a plurality of dielectric layers over a semiconductor substrate; and forming integrated passive devices in the plurality of dielectric layers. The semiconductor substrate is then removed from the plurality of dielectric layers. A dielectric substrate is bonded onto the plurality of dielectric layers. | 2012-07-26 |
| 20120190153 | METHOD FOR CONNECTING SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for connecting substrates is provided. The method includes the steps of: preparing a first wiring substrate having a first substrate including a first region and a second region which are provided with a first metal wire, wherein an area ratio between the first region and the first metal wires in the first region is different from an area ratio between the second region and the first metal wire in the second region; heating the first wiring substrate to bend the first wiring substrate; and electrically connecting a third wiring on a third substrate to the first metal wire provided on the first wiring substrate, thereby mounting the first wiring substrate on the third substrate in a manner that the first surface of the first substrate is nonparallel to the first surface of the third substrate. | 2012-07-26 |
| 20120190154 | SEMICONDUCTOR DEVICE INCLUDING CAPACITOR ELEMENT AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a substrate, an insulating film formed over the substrate, first and second conductive plugs formed in the insulating film, a capacitor element, and a wiring. The capacitor element includes a lower electrode, a dielectric film, and an upper electrode. The lower electrode is connected to an end of the first plug and formed on the insulating film, and includes a first barrier film. The dielectric film is formed on upper and side surfaces of the lower electrode. The upper electrode is formed on the dielectric film, and includes a second barrier metal film being wider than the lower electrode. The wiring is connected to an end of the second plug and formed on the insulating film, and includes a first layer and a second layer formed on the first layer. The first and second layers include the first and second barrier metal films, respectively. | 2012-07-26 |
| 20120190155 | NANOWIRE MOSFET WITH DOPED EPITAXIAL CONTACTS FOR SOURCE AND DRAIN - A FET structure with a nanowire forming the FET channel, and doped source and drain regions formed by radial epitaxy from the nanowire body is disclosed. A top gated and a bottom gated nanowire FET structures are discussed. The source and drain fabrication can use either selective or non-selective epitaxy. | 2012-07-26 |
| 20120190156 | RECESSED GATE CHANNEL WITH LOW Vt CORNER - A recessed gate FET device includes a substrate having an upper and lower portions, the lower portion having a reduced concentration of dopant material than the upper portion; a trench-type gate electrode defining a surrounding channel region and having a gate dielectric material layer lining and including a conductive material having a top surface recessed to reduce overlap capacitance with respect to the source and drain diffusion regions formed at an upper substrate surface at either side of the gate electrode. There is optionally formed halo implants at either side of and abutting the gate electrode, each halo implants extending below the source and drain diffusions into the channel region. Additionally, highly doped source and drain extension regions are formed that provide a low resistance path from the source and drain diffusion regions to the channel region. | 2012-07-26 |
| 20120190157 | MASK AND METHOD OF MANUFACTURING ARRAY SUBSTRATE USING THE SAME - A mask includes: a substrate that includes a central area and a peripheral area disposed around the central area; and lenses disposed in rows and columns, in the central area and the peripheral area. The lenses of opposing sides of the peripheral area may be disposed in different rows or columns. For a given amount of input light, the lenses of the peripheral area may focus less light on a substrate than the lenses of the central area. The mask may be disposed over the substrate in different positions, and then the substrate may be irradiated through the mask, while the mask is in each of the positions. The peripheral portion of the mask may be disposed over the same area of the substrate, while the mask is in different ones of the positions. | 2012-07-26 |
| 20120190158 | NMOS TRANSISTOR WITH ENHANCED STRESS GATE - A gate stack for an NMOS transistor in an IC to induce tensile stress in the NMOS channel is disclosed. The gate stack includes a first layer of undoped polysilicon, a second layer of n-type polysilicon to establish a desired work function in the gate, layer of compressively stressed metal, and a third layer of polysilicon to provide a silicon surface for subsequent formation of metal silicide. Candidates for the compressively stressed metal are TiN, TaN, W, and Mo. In a CMOS IC, the n-type polysilicon layer and metal layer are patterned in NMOS transistor areas, while the first polysilicon layer and third polysilicon layer are patterned in both NMOS and PMOS transistor areas. Polysilicon CMP may be used to reduce topography between the NMOS and PMOS gate stacks to facilitate gate pattern photolithography. | 2012-07-26 |
| 20120190159 | ASYMMETRIC SILICON-ON-INSULATOR SRAM CELL - A memory cell having N transistors including at least one pair of access transistors, one pair of pull-down transistors, and one pair of pull-up transistors to form a memory cell, wherein N is an integer at least equal to six, wherein each of the access transistors and each of the pull-down transistors is a same one of an n-type or a p-type transistor, and each of the pull-up transistors is the other of an n-type or a p-type transistor, wherein at least one of the pair of the pull down transistors and the pair of the pull up transistors are asymmetric. | 2012-07-26 |
| 20120190160 | ASYMMETRIC CHANNEL MOSFET - A field effect transistor includes a partial SiGe channel, i.e., a channel including a SiGe channel portion, located underneath a gate electrode and a Si channel portion located underneath an edge of the gate electrode near the drain region. The SiGe channel portion can be located directly underneath a gate dielectric, or can be located underneath a Si channel layer located directly underneath a gate dielectric. The Si channel portion is located at the same depth as the SiGe channel portion, and contacts the drain region of the transistor. By providing a Si channel portion near the drain region, the GIDL current of the transistor is maintained at a level on par with the GIDL current of a transistor having a silicon channel only during an off state. | 2012-07-26 |
| 20120190161 | N-type carrier enhancement in semiconductors - A field effect transistor (FET) has a channel hosted in Ge. The FET has silicon-germanium (SiGe) source and drain formed by selective epitaxy. The SiGe source and drain exert a tensile stress onto the Ge channel. During forming of the SiGe source and drain, an n-type dopant species and a compensating species are being incorporated into the SiGe source and drain. The n-type dopant species and the compensating species are so selected that the size of the SiGe atomic radius is inbetween the dopant atomic radius and the compensating species atomic radius. | 2012-07-26 |
| 20120190162 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - A semiconductor device includes a gate electrode over a semiconductor substrate, a channel region provided in the semiconductor substrate below the gate electrode, and a strain generation layer configured to apply stress to the channel region, the strain generation layer being configured to apply greater stress in absolute value to the source edge of the channel region than to the drain edge of the channel region. | 2012-07-26 |
| 20120190163 | METHOD FOR MAKING DUAL SILICIDE AND GERMANIDE SEMICONDUCTORS - A method for making a dual silicide or germanide semiconductor comprises steps of providing a semiconductor substrate, forming a gate, forming source/drain regions, forming a first silicide, reducing spacers thickness and forming a second silicide. Forming a gate comprises forming an insulating layer over the semiconductor substrate, and forming the gate over the insulating layer. Forming source/drain regions comprises forming lightly doped source/drain regions in the semiconductor substrate adjacent to the insulating layer, forming spacers adjacent to the gate and over part of the lightly doped source/drain regions, and forming heavily doped source/drain regions in the semiconductor substrate. The first silicide is formed on an exposed surface of lightly and heavily doped source/drain regions. The second silicide is formed on an exposed surface of lightly doped source/drain regions. A first germanide and second germanide may replace the first silicide and the second silicide. | 2012-07-26 |
| 20120190164 | DUAL-DAMASCENE PROCESS TO FABRICATE THICK WIRE STRUCTURE - A method and semiconductor device. In the method, at least one partial via is etched in a stacked structure and a border is formed about the at least one partial via. The method further includes performing thick wiring using selective etching while continuing via etching to at least one etch stop layer. | 2012-07-26 |
| 20120190165 | Creating Integrated Circuit Capacitance From Gate Array Structures - Techniques for using gate arrays to create capacitive structures within an integrated circuit are disclosed. Embodiments comprise placing a gate array of P-type field effect transistors (P-fets) and N-type field effect transistors (N-fets) in an integrated circuit design, coupling drains and sources for one or more P-fets and gates for one or more N-fets to a power supply ground, and coupling gates for the one or more P-fets and the drains and sources for one or more N-fets to a positive voltage of the power supply. In some embodiments, source-to-drain leakage current for capacitive apparatuses of P-fets and N-fets are minimized by biasing one or more P-fets and one or more N-fets to the positive voltage and the ground, respectively. In other embodiments, the capacitive structures may be implemented using fusible elements to isolate the capacitive structures in case of shorts. | 2012-07-26 |
| 20120190166 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR FORMING HARD MASK - A method for manufacturing a semiconductor device comprises forming a base film on a semiconductor substrate, forming an amorphous carbon film on the base film, forming a pattern of the amorphous carbon film, and etching the base film using the amorphous carbon film as a mask. The film density of the amorphous carbon film is reduced from surface of the amorphous carbon film to face of the amorphous carbon film adjacent to the base film. | 2012-07-26 |
| 20120190167 | MECHANISMS OF DOPING OXIDE FOR FORMING SHALLOW TRENCH ISOLATION - The embodiments described provide mechanisms for doping oxide in the STIs with carbon to make etch rate in the narrow and wide structures equal and also to make corners of wide STIs strong. Such carbon doping can be performed by ion beam (ion implant) or by plasma doping. The hard mask layer can be used to protect the silicon underneath from doping. By using the doping mechanism, the even surface topography of silicon and STI enables patterning of gate structures and ILD0 gapfill for advanced processing technology. | 2012-07-26 |
| 20120190168 | METHOD FOR FORMING TRENCHES AND TRENCH ISOLATION ON A SUBSTRATE - A method for forming trench isolation on a substrate includes providing a substrate having thereon a pad layer and a hard mask; forming a first shallow trench in a first area and a second trench in a second area on the substrate; forming a resist layer covering the first area while exposing the second area; etching the second shallow trench to form a deep trench; forming oxide liner within the first shallow trench and the deep trench; and filling the shallow trench and the deep trench with an oxide layer. | 2012-07-26 |
| 20120190169 | METHOD FOR FABRICATING DEEP TRENCH ISOLATION - The invention provides a method for fabricating a deep trench isolation including: providing a substrate; forming a first trench in the substrate; conformally forming a first liner layer on the sidewall and bottom of the first trench; forming a first filler layer on the first liner layer and filling the first trench; forming an epitaxial layer on the substrate and the first trench; forming a second trench through the epitaxial layer and over the first trench; conformally forming a second liner layer on the sidewall and bottom of the second trench; and forming a second filler layer on the second liner layer and filling the second trench. | 2012-07-26 |
| 20120190170 | PRECISE OXIDE DISSOLUTION - A method for dissolving the buried oxide layer of a SeOI wafer in order to decrease its thickness. The SeOI wafer includes a thin working layer made from one or more semiconductor material(s); a support layer, and a buried oxide (BOX) layer between the working layer and the support layer. The dissolution rate of the buried oxide layer is controlled and set to be below 0.06 Å/sec. | 2012-07-26 |
| 20120190171 | METHOD FOR MANUFACTURING SOI SUBSTRATE - An SOI substrate is manufactured by the following steps: a semiconductor substrate is irradiated with an ion beam in which the proportion of H | 2012-07-26 |
| 20120190172 | METHOD FOR MAKING GALLIUM NITRIDE SUBSTRATE - A method for making a GaN substrate for growth of nitride semiconductor is provided. The method first provides a GaN single crystal substrate. Then an ion implanting layer is formed inside the GaN single crystal substrate, which divides the GaN single crystal substrate into a first section and a second section. After that, the GaN single crystal substrate is connected with an assistant substrate through a connecting layer. Thereafter, the GaN single crystal substrate is heated whereby the ion implanting layer is decompounded. Finally, the second section is separated from the first section. The first section left on a surface of the assistant substrate is provided for growth of nitride semiconductor thereon. | 2012-07-26 |
| 20120190173 | METHOD FOR PACKAGING WAFER - A method for packaging a wafer is provided, which includes: providing a bare wafer; forming a plurality of through silicon vias across through the bare wafer, the through silicon vias being filled with a conducting metal; forming a redistribution layer on the bare wafer, the redistribution layer being connected to each of the through silicon vias; performing a chemical mechanical polishing process to planarize a surface of the bare wafer; performing a wafer forming process to treat the planarized bare wafer; forming a metal layer on the wafer after processed; forming a plurality of connection pads on the metal layer, the connection pads being respectively electrically connected to their corresponding through silicon vias; forming a passivation layer on the metal layer; and forming a plurality of solder balls or metal bumps on a backside surface of the wafer through which the processed wafer is electrically connected to a substrate. | 2012-07-26 |
| 20120190174 | LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS - There is provided a laser processing method of a sapphire substrate including preparing a sapphire substrate on which plural stacked portions spaced from each other are formed, irradiating a short pulse laser beam from a laser light source, making the laser beam irradiated from the laser light source pass through a beam shaping module, adjusting a position of a light concentrating unit or the sapphire substrate such that the laser beam is concentrated to the inside of the sapphire substrate through the light concentrating unit, and forming a phase transformation area within the sapphire substrate by irradiating the laser beam into the sapphire substrate. The laser beam is introduced into the sapphire substrate while avoiding an area where the stacked portions are formed on the sapphire substrate, so that the phase transformation area is formed within the sapphire substrate. | 2012-07-26 |
| 20120190175 | LASER PROCESSING METHOD AND LASER PROCESSING APPARATUS - A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed. | 2012-07-26 |
| 20120190176 | CATALYTIC CVD EQUIPMENT, METHOD FOR FORMATION OF FILM, AND PROCESS FOR PRODUCTION OF SOLAR CELL - In a catalytic CVD equipment, the control unit controls a temperature of the catalytic wires to a standby temperature at predetermined time intervals before and after the film is formed. The standby time is a predetermined temperature which is lower than the temperature of the catalytic wires when the film is formed, and is higher than room temperature. | 2012-07-26 |
| 20120190177 | N-type carrier enhancement in semiconductors - A method includes epitaxially growing a germanium (Ge) layer onto a Ge substrate and incorporating a compensating species with a compensating atomic radius into the Ge layer. The method includes implanting an n-type dopant species with a dopant atomic radius into the Ge layer. The method includes selecting the n-type dopant species and the compensating species in such manner that the size of the Ge atomic radius is inbetween the n-type dopant atomic radius and the compensating atomic radius. | 2012-07-26 |
| 20120190178 | POLYSILICON FILMS BY HDP-CVD - Methods of forming polysilicon layers are described. The methods include forming a high-density plasma from a silicon precursor in a substrate processing region containing the deposition substrate. The described methods produce polycrystalline films at reduced substrate temperature (e.g. <500° C.) relative to prior art techniques. The availability of a bias plasma power adjustment further enables adjustment of conformality of the formed polysilicon layer. When dopants are included in the high density plasma, they may be incorporated into the polysilicon layer in such a way that they do not require a separate activation step. | 2012-07-26 |
| 20120190179 | METHODS OF MANUFACTURING FINFET DEVICES - A finFET structure and method of manufacture such structure is provided with lowered Ceff and enhanced stress. The finFET structure includes a plurality of finFET structures and a stress material forming part of a gate stack and in a space between adjacent ones of the plurality of finFET structures. | 2012-07-26 |
| 20120190180 | Thin film crystallization device and method for making a polycrystalline composition - A method for making a polycrystalline composition, wherein the method includes the steps of a) preparing a precursor material, b) heating the precursor material to a reaction temperature in the presence of a precursor vapor supplied from a source at a preselected partial pressure, for a sufficient time to initiate an interaction between the precursor material and the precursor vapor to form a heated precursor material, and c) cooling the heated precursor material at a predetermined cooling rate, optionally, in the presence of the precursor vapor supplied at a partial pressure, to yield the polycrystalline composition. A device for implementing the method of the present invention is also provided | 2012-07-26 |
| 20120190181 | CARBON IMPLANTATION PROCESS AND CARBON ION PRECURSOR COMPOSITION - Methods and carbon ion precursor compositions for implanting carbon ions generally includes vaporizing and ionizing a gas mixture including carbon oxide and methane gases in an ion source to create a plasma and produce carbon ions. The ionized carbon within the plasma is then extracted to form an ion beam. The ion beam is mass analyzed with a mass analyzer magnet to permit the ionized carbon to pass therethrough and implant into a workpiece. | 2012-07-26 |
| 20120190182 | DEFECT-FREE JUNCTION FORMATION USING OCTADECABORANE SELF-AMORPHIZING IMPLANTS - A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then annealed to completely dissociate and activate the boron clusters. The annealing may take place by melting the implanted regions or by a sub-melt annealing process. | 2012-07-26 |
| 20120190183 | USING MULTIPLE MASKS TO FORM INDEPENDENT FEATURES ON A WORKPIECE - A first species is directed through a first mask with a first aperture and a second mask with a second aperture. The first aperture and second aperture may be different shapes or have different spacing. The first species may be implanted in pattern defining non-implanted regions surrounded by implanted regions. These implanted regions are a sum of said first ion species implanted through said first aperture and said second aperture. Thus, the non-implanted regions are surrounded by the implanted regions formed using the first mask and second mask. The first species also may deposit on or etch the workpiece. | 2012-07-26 |
| 20120190184 | PROCESSES AND APPARATUS HAVING A SEMICONDUCTOR FIN - A process may include forming a mask directly on and above a region selected as an initial semiconductor fin on a substrate and reducing the initial semiconductor fin forming a semiconductor fin that is laterally thinned from the initial semiconductor fin. The process may be carried out causing the mask to recede to a greater degree in the lateral direction than the vertical direction. In various embodiments, the process may include removing material from the fin semiconductor to achieve a thinned semiconductor fin, which has receded beneath the shadow of the laterally receded mask. Electronic devices may include the thinned semiconductor fin as part of a semiconductor device. | 2012-07-26 |
| 20120190185 | PLASMA TREATMENT OF SILICON NITRIDE AND SILICON OXYNITRIDE - A method of forming a semiconductor device is disclosed. Nitrogen layers of an IPD stack are deposited using silane and a nitrogen plasma to yield a nitride layer plasma treated through its entire thickness. In addition to nitriding the bottom nitride layer of the stack, the middle nitride layer may also be nitrided. Depositing silicon from silane in a nitrogen plasma may be accomplished using high density plasma, ALD, or remote plasma processes. Elevated temperature may be used during deposition to reduce residual hydrogen in the deposited layer. | 2012-07-26 |
| 20120190186 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device manufacturing method includes: forming a first insulating film over the surface of a semiconductor substrate having at least two adjacent protrusions in such a manner that the film thickness between the two protrusions is not less than 1.2 times the height of at least one of the two protrusions; and forming a second insulating film over the first insulating film, the second insulating film being harder than the first insulating film. | 2012-07-26 |
| 20120190187 | PAD BONDING EMPLOYING A SELF-ALIGNED PLATED LINER FOR ADHESION ENHANCEMENT - Two substrates are brought together and placed in a plating bath. In one embodiment, a conductive material is plated in microscopic cavities present at the interface between a first metal pad and a second metal pad to form at least one interfacial plated metal liner portion that adheres to a surface of the first metal pad and a surface of the second metal pad. In another embodiment, at least one metal pad is recessed relative to a dielectric surface before being brought together. The two substrates are placed in a plating bath and a conductive material is plated in the cavity between the first metal pad and the second metal pad to form a contiguous plated metal liner layer that adheres to a surface of the first metal pad and a surface of the second metal pad. | 2012-07-26 |
| 20120190188 | METHOD FOR FILLING A GAP - A method for filling a gap includes: providing a semiconductor substrate, at least having an metal interconnect layer and an insulating dielectric layer on top of the underlying metal interconnect layer, the insulating dielectric layer having a gap; forming a diffusion bather layer and a seed layer sequentially in the gap and on a surface of the insulating dielectric layer outside the gap; forming a mask layer on a surface of the seed layer outside of the gap; and depositing a metal layer on the semiconductor substrate with the mask layer, the metal layer filling the gap. | 2012-07-26 |
