28th week of 2011 patent applcation highlights part 15 |
Patent application number | Title | Published |
20110168932 | SOLENOID ARRANGEMENT AND VALVE ARRANGEMENT - The invention relates to a solenoid wherein a magnetic discontinuity is formed in the pole tube by means of reducing the effective material thickness, such as by reducing the thickness, particularly the wall thickness of the magnetically active material, the front face of the armature facing the polker segment and a floor in the interior of the pole tube at the polker segment each have a contour allowing mutual axial overlapping. This enables advantageous influencing of the force-stroke characteristic curve of the solenoid with low production effort. | 2011-07-14 |
20110168933 | Adjusting Screw Structure of Oil Immersed Solenoid and Oil Immersed Solenoid Including the Same - An adjusting screw structure of an oil immersed solenoid comprises a movable core provided in a first space of a main body case to be movable in an axial direction. The core is biased by an adjusting spring to be pulled by a fixed magnetic pole portion. An adjusting screw capable of adjusting biasing force of the adjusting spring is included. The adjusting screw structure includes an air-bleeding plug configured to detachably attach to and seal an opening end portion of a rear case, which communicates with the first space. The air-bleeding plug includes an internal screw portion that threadedly engages the adjustable screw. A detachable mechanism is configured to attach the air-bleeding plug to the opening end portion, locating the air-bleeding plug at a predetermined attachment position in a movement direction of the adjusting screw. Thus, air in a solenoid can be removed without causing a biasing force error. | 2011-07-14 |
20110168934 | BALL VALVE FOR A TANK TRAILER - A ball valve has a first half and second half coupled to form a valve body. The first half has an outlet passage, a single ball seat at an opening of the outlet, a first aperture receiving a first stem, and a first flange oriented about 45 degrees from the outlet. The second half has an inlet passage, a second aperture receiving a second stem, and a second flange oriented about 45 degrees from the inlet. A half ball is coupled to a first stem and a second stem disposed in the first and second apertures such that the half ball rotates about an axis of the first and second stems. The half ball rotates between a closed position in which a sealing side of the half ball is sealed against the single ball seat to prevent fluid flow, and an open position that permits fluid flow. | 2011-07-14 |
20110168935 | Adjustable Damping Valve - Adjustable damping valve for a vibration damper having a valve body having a pressure-loaded surface that acts in the lifting direction of the valve body and is impinged by an incident flow of damping medium from an opening inside a cross section limited by valve seat surface, and a surface operative in the closing direction is formed by a rear side of the valve body. A resulting force including a force of at least one valve spring and an actuating force of an actuator acts on the valve body. An additional surface of the valve body is pressure-loaded by damping medium by incident flow on the valve body in the closing direction of the valve body, or the valve body has a first pressure-loaded surface acting in the lifting direction, and a second pressure-loaded surface that acts in the lifting direction. | 2011-07-14 |
20110168936 | Microvalve, Micropump and Manufacturing Method - A microvalve, in particular for a micropump, is described, which includes a valve member which is adjustable between an open position and a closed position, in contact with a valve seat in its closed position. The valve seat is made of a polymer material. A micropump and a manufacturing method are also described. | 2011-07-14 |
20110168937 | VACUUM VALVE WITH GAS-TIGHT SHAFT PENETRATION - The invention relates to a vacuum valve for interrupting, releasing or controlling a flowing medium in the interior ( | 2011-07-14 |
20110168938 | MULTIPLE INORGANIC COMPOUND AND USE THEREOF, AND METHOD OF PRODUCING MULTIPLE INORGANIC COMPOUND - An multiple inorganic compound ( | 2011-07-14 |
20110168939 | COMPOSITE MAGNETIC MATERIAL AND MAGNETIC ELEMENT - The object of the present invention is to provide a composite magnetic material having well-balanced magnetic properties and chemical properties, and a magnetic element using thereof. Concretely, the present provides the composite magnetic material comprising a binder and a magnetic powder contains followings: Mn not less than 0.25 wt % and not larger than 3 wt %, Si not less than 1 wt % and not larger than 7 wt %, Cr not less than 2 wt % and not larger than 8 wt %, and the rest of Fe and inevitable impurities with respect to the total weight of a magnetic powder material, and a ratio of powder particles having the major/minor axis is not less than 2 is not larger than 5% of the total powder particles. | 2011-07-14 |
20110168940 | COMPOSITION FOR ENHANCING EVAPORATION OF SOLUTION AND METHOD THEREOF - The present invention discloses a composition for enhancing evaporation of a solution and a method thereof. A far-infrared ray is released by a far-infrared releasing substance in the composition so as to induce evaporation of the solution. The far-infrared releasing substance may be ceramic minerals and mainly comprises 80˜99.9 wt % of oxide minerals including 60˜95 wt % of the aluminum oxide. The present invention can enhance evaporation of the solution by a simple physical method. Hence, the present invention not only promotes the application of the products but also reduces the pollutants generated by a chemical reaction, thereby achieving the object of protecting the environment from the pollution. | 2011-07-14 |
20110168941 | DEICING SOLUTION - A de-icing and anti-icing composition in the form of an aqueous solution which includes sugars, and an inorganic freezing point depressant in the form of a chloride salt. | 2011-07-14 |
20110168942 | CARBON FIBROUS AGGREGATOR, METHOD FOR MANUFACTURING THEREOF, AND COMPOSITE MATERIAL INCLUDING THEREOF - Disclosed is a carbon fibrous aggregator obtained by a chemical vapor phase growing method, which comprises plural granular parts, and plural carbon fibers which are mutually independently extended outwardly from their respective granular parts so that each granular part is associated with two or more of carbon fibers, wherein the carbon fibers show a three dimensional expansion in all; and
| 2011-07-14 |
20110168943 | Pitch Emulsions - An emulsion of pitch in water preferably characterized by having a lower level of tack on drying by virtue of using as the emulsifying agent a fatty acid, a chemically modified fatty acid, a rosin acid, a chemically modified rosin acid, or combinations thereof, especially a tall oil fatty acid, or a chemically modified tall oil fatty acid, where the pitch emulsion is useful for reducing the development of fugitive dust in a dust-forming material. | 2011-07-14 |
20110168944 | CATHODE ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY - Provided is a cathode active material for a lithium secondary battery, including a lithium-transition metal composite oxide represented by the following formula (1), which contains an excess of lithium, so as to exhibit enhanced rate characteristics under high rate charge/discharge conditions: Lii+aNi′bNi″cMndCoeO2 (1) wherein each of a, b, c, d and e has the same meaning as defined in the disclosure. The cathode active material according to the present invention includes an excess of lithium and, different from conventional technologies, a lithium-transition metal composite oxide containing a nickel element with a predetermined oxidation number, so that the active material exhibits a stable crystal structure and excellent rate characteristics under high rate charge/discharge conditions. | 2011-07-14 |
20110168945 | Positive active material and method of preparing the same - Provided are a positive active material and a method of preparing the same. The positive active material includes LiM | 2011-07-14 |
20110168946 | NOVEL POLYTHIOPHENE POLYANION COMPLEXES IN HOMOPOLAR ORGANIC SOLVENTS - The invention relates to novel polythiophene-polyanion complexes which are soluble or dispersible in nonpolar organic solvents, and to the use thereof. | 2011-07-14 |
20110168947 | PRODUCING LOW METHANE SYNGAS FROM A TWO-STAGE GASIFIER - The present disclosure relates generally to a method for obtaining synthesis gas from a gasifier that has a low methane content. The synthesis gas is obtained as an extraction gas from the quench section of the gasifier, and can be utilized as feedstock for a variety of chemical production processes without the need for expensive pre-treatment to remove methane. | 2011-07-14 |
20110168948 | Process for Producing Ammonia Synthesis Gas - A process for producing ammonia synthesis gas, where a natural gas feedstock ( | 2011-07-14 |
20110168949 | METHOD FOR PRESERVING OBJECTS CONTAINING PIGMENT - The present invention is directed towards a method of preserving an object comprising Prussian blue pigment and a storage and/or display case for said preservation method. | 2011-07-14 |
20110168950 | SIMULANT MATERIAL AND METHOD FOR MANUFACTURE THEREOF - Provided is a simulant material for simulating hazardous materials, including a quantity of at least one explosive material and at least one inert material. The simulant material is a non-explosive material and is in the form of a homogenous, flexible and non-particulated material. Also provided is a method for manufacturing such a simulant material. | 2011-07-14 |
20110168951 | THERMALLY STABLE CONDUCTING POLYMERS, METHODS OF MAKING, AND METHODS OF USE THEREOF - Disclosed herein are thermally stable conducting polymers prepared by template polymerization of a conducting monomer in the presence of a sulfonated poly(amic acid). The resulting conducting polymer-sulfonated poly(amic acid) complex can be thermally converted to a conducting polymer-sulfonated poly(imide) complex having high thermal stability and high conductivity. Also disclosed are articles prepared from the thermally stable conducting polymer. | 2011-07-14 |
20110168952 | HIGH WORK-FUNCTION AND HIGH CONDUCTIVITY COMPOSITIONS OF ELECTRICALLY CONDUCTING POLYMERS - Provided are compositions having high conductivity and high work-function. The compositions comprise an aqueous dispersion or solution of an electrically conducting polymer and a perfluorinated polymeric acid. The conductive polymers may be made from conjugated monomers or comonomers and a non-fluorinated polymeric acid, and the perfluorinated polymeric acides may be derived from perfluoroolefins having perfluoro-ether-sulfonic acid side chains. Devices embodying such compositions are also provided. | 2011-07-14 |
20110168953 | Polymers Derived from Benzobis(silolothiophene) and their Use as Organic Semiconductors - The invention relates to conjugated polymers comprising benzo-bis(silolothiophene) units or derivatives thereof, to methods of their preparation, to novel monomer units used therein, to the use of the polymers in organic electronic (OE) devices, and to OE devices comprising the polymers. | 2011-07-14 |
20110168954 | CARBON NANOTUBE BASED COMPOSITE SURFACE ENHANCED RAMAN SCATTERING (SERS) PROBE - An electromagnetic and/or chemical enhancement which greatly enhances the Raman signal response for Surface Enhanced Raman is directed to molecular probe systems. Such molecular probe systems have many properties that make them ideal as probes for Scanning Probe Microscopy, Atomic Force Microscopy, and many other applications. | 2011-07-14 |
20110168955 | Templated Growth of Carbon Nanotubes - A method of growing carbon nanotubes uses a synthesized mesoporous silica template with approximately cylindrical pores being formed therein. The surfaces of the pores are coated with a carbon nanotube precursor, and the template with the surfaces of the pores so-coated is then heated until the carbon nanotube precursor in each pore is converted to a carbon nanotube. | 2011-07-14 |
20110168956 | WATER SOLUBLE POLYMER BINDER FOR LITHIUM ION BATTERY - An electrode for a rechargeable lithium ion battery includes an electro-active material, a (polystyrenebutadiene rubber)-poly (acrylonitrile-co-acrylamide) polymer, and a conductive additive. A battery using the inventive electrode is also disclosed. | 2011-07-14 |
20110168957 | ELECTRICALLY CONDUCTIVE SOLID COMPOSITE MATERIAL, AND METHOD OF OBTAINING SUCH A MATERIAL - An electrically conductive solid composite material contains:
| 2011-07-14 |
20110168958 | ELECTRICAL CONTACT ENHANCING COATING - The electrical contact enhancing coating is a composition that includes finely divided precious metal particles mixed with a dielectric carrier to form a coating. The dielectric carrier is a vegetable oil (preferably soybean-based) carrier of the type used as a dielectric coolant in power transformers, and is preferably high in antioxidant content. In a first embodiment, the precious metal is 100% silver having an average particle size of about 5-10 μm. In a second embodiment, the precious metal is about 65-85% silver and 15-35% gold (average particle size 0.5-1.8 μm), by weight. In a third embodiment, the precious metal is about 65-85% silver, 12.5-30% gold, and 2.5-5% palladium (average particle size 0.5-1.8 μm), by weight. The precious metals may be cryogenically treated prior to mixing with the dielectric carrier. | 2011-07-14 |
20110168959 | METHOD AND APPARATUS FOR EXTRACTING OF CABLE ELEMENTS - The invention relates to a method and to an apparatus ( | 2011-07-14 |
20110168960 | DEVICE AND METHOD FOR CONTROLLING A PRESTRESSING JACK WHEN TENSIONING A TENDON - A device and a method for controlling a clamping press is provided when clamping a tension member as a function of the clamping force of a reference clamping member. The device has a hollow, cylindrical housing, wherein a piston coupled to the reference tension member is supported longitudinally displaceably along an axis. The housing and the piston encompass a pressure chamber that can be acted upon by a pressure medium for performing an axial stroke motion of the piston against the clamping force of the reference tension member by an inlet, and that can be connected by an outlet to the clamping press. The device further comprises a valve unit for controlling the application of the pressure medium to the clamping press, wherein the valve unit can be directly controlled by the stroke motion of the piston. The method according to the invention provides for clamping the tension member as a function of the clamping force of the reference tension member by the cylinder piston unit, the piston thereof holding the reference tension member in a predetermined stress state. When a uniform stress state is achieved in all tension members in the course of clamping the tension member by a clamping press, the inflow of the pressure medium to the clamping press is directly interrupted by the stroke motion of the piston. | 2011-07-14 |
20110168961 | Winching Apparatus - A winching apparatus includes a fairlead mounted to a vehicle and a fifth roller mounted below the fairlead that is positioned and sized such that the cable does not contact any portion of the vehicle between the fairlead and the fifth roller when the cable passes from the winch and under the vehicle. | 2011-07-14 |
20110168962 | CABLE GUIDING DEVICE - A cable guiding device includes a base, upper and lower guide members disposed along a longitudinal direction, in which two ends of the upper guide member are mounted on the base and two ends of the lower guide member are mounted on the base. A slider defining a central cavity is penetrated therethrough in a lateral direction substantially perpendicular to the longitudinal direction. Upper and lower movable members are fitted slidably over the upper and lower guide members respectively, in which two ends of the upper movable member are mounted on two longitudinal side walls of the slider, and two ends of the lower movable member are mounted on two longitudinal side walls of the slider respectively. Upper and lower guiding rollers are fitted rotatably over the upper and lower movable members and disposed within the central cavity respectively. | 2011-07-14 |
20110168963 | TEMPORARY FENCE PANEL - The present invention relates to a temporary fencing panel | 2011-07-14 |
20110168964 | Processing Phase Change Material to Improve Programming Speed - A phase change material may be processed to reduce its microcrystalline grain size and may also be processed to increase the crystallization or set programming speed of the material. For example, material doped with nitrogen to reduce grain size may be doped with titanium to reduce crystallization time. | 2011-07-14 |
20110168965 | Reducing Drift in Chalcogenide Devices - Chalcogenide materials conventionally used in chalcogenide memory devices and ovonic threshold switches may exhibit a tendency called drift, wherein threshold voltage or resistance changes with time. By providing a compensating material which exhibits an opposing tendency, the drift may be compensated. The compensating material may be mixed into a chalcogenide, may be layered with chalcogenide, may be provided with a heater, or may be provided as part of an electrode in some embodiments. Both chalcogenide and non-chalcogenide compensating materials may be used. | 2011-07-14 |
20110168966 | DEPOSITION OF AMORPHOUS PHASE CHANGE MATERIAL - A method for formation of a phase change memory (PCM) cell includes depositing amorphous phase change material in a via hole, the via hole comprising a bottom and a top, such that the amorphous phase change material is grown on an electrode located at the bottom of the via hole; melt-annealing the amorphous phase change material; and crystallizing the phase change material starting at the electrode at the bottom of the via hole and ending at the top of the via hole. | 2011-07-14 |
20110168967 | ELECTRONIC ELEMENT AND ELECTROCONDUCTIVITY CONTROL METHOD - An electronic device | 2011-07-14 |
20110168968 | FLUIDIC NANOTUBES AND DEVICES - Fluidic nanotube devices are described in which a hydrophilic, non-carbon nanotube, has its ends fluidly coupled to reservoirs. Source and drain contacts are connected to opposing ends of the nanotube, or within each reservoir near the opening of the nanotube. The passage of molecular species can be sensed by measuring current flow (source-drain, ionic, or combination). The tube interior can be functionalized by joining binding molecules so that different molecular species can be sensed by detecting current changes. The nanotube may be a semiconductor, wherein a tubular transistor is formed. A gate electrode can be attached between source and drain to control current flow and ionic flow. By way of example an electrophoretic array embodiment is described, integrating MEMs switches. A variety of applications are described, such as: nanopores, nanocapillary devices, nanoelectrophoretic, DNA sequence detectors, immunosensors, thermoelectric devices, photonic devices, nanoscale fluidic bioseparators, imaging devices, and so forth. | 2011-07-14 |
20110168969 | Large Scale Patterned Growth of Aligned One-Dimensional Nanostructures - A method of making nanostructures using a self-assembled monolayer of organic spheres is disclosed. The nanostructures include bowl-shaped structures and patterned elongated nanostructures. A bowl-shaped nanostructure with a nanorod grown from a conductive substrate through the bowl-shaped nanostructure may be configured as a field emitter or a vertical field effect transistor. A method of separating nanoparticles of a desired size employs an array of bowl-shaped structures. | 2011-07-14 |
20110168970 | OPTOELECTRONIC LIGHT EMITTING STRUCTURE - A light emitting structure comprising a hot electron source and a layer of ptoelectronic material disposed thereon and optionally p-type material disposed on the optoelectronic material. For example, a light emitting structure that comprises, in order, a polycrystalline silicon layer, a silicon dioxide layer, a zinc oxide layer and an indium tin oxide (ITO) layer. When a sufficient voltage is applied across the layers, light is generated. | 2011-07-14 |
20110168971 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD FOR SAME - Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a reflective ohmic contact layer on the support substrate, a functional complex layer including a process assisting region and ohmic contact regions divided by the process assisting region on the reflective ohmic contact layer, and a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on each ohmic contact region. | 2011-07-14 |
20110168972 | LED WITH UNIFORM CURRENT SPREADING AND METHOD OF FABRICATION - A lateral light emitting diode comprises a layer stack disposed on one side of a substrate, the layer stack including a p-type layer, n-type layer, and a p/n junction formed therebetween. The LED may further include a p-electrode disposed on a first side of the substrate and being in contact with the p-type layer on an exposed surface and an n-electrode disposed on the first side of the substrate and being in contact with an exposed surface of an n | 2011-07-14 |
20110168973 | LIGHT GENERATING DEVICE INCLUDING COMPOUND SEMICONDUCTOR AND METHOD OF DETERMINING COMPOUND RATIO OF COMPOUND SEMICONDUCTOR FOR LIGHT GENERATING DEVICE - A method of manufacturing a light generating device with required wavelength is disclosed. According to the method, a) a required wavelength is determined. b) A polar angle and an azimuthal angle corresponding to the required wavelength in a nitride semiconductor are determined. Then, c) a nitride semiconductor crystal is grown according to the polar angle and the azimuthal angle. Therefore, a light generating device with required wavelength may be manufactured without adjusting amounts of elements of compound semiconductor. | 2011-07-14 |
20110168974 | GROUP III NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREFOR - The object of the present invention is to improve extraction efficiency of light of a Group III nitride-based compound semiconductor light-emitting device of a multiple quantum well structure. The device comprises a multiple quantum well structure comprising a well layer comprising a semiconductor including at least In for composition, a protective layer which comprises a semiconductor including at least Al and Ga for composition and has a band gap larger than a band gap of the well layer and is formed on and in contact with the well layer in a positive electrode side. And also the device comprises a barrier layer comprising a band gap which is larger than a band gap of the well layer and is smaller than a band gap of the protective layer, and formed on and in contact with the protective layer in a positive electrode side and a periodical structure of the well layer, the protective layer and the barrier layer. | 2011-07-14 |
20110168975 | CAGED QUANTUM DOTS - Semiconductor nanocrystals known as quantum dots (QD) are caged by being associated with a molecule such as an orth-Nitrobenzyl (ONB) group. The luminescence of the QD is suppressed until activated by violet or ultra violet light. | 2011-07-14 |
20110168976 | MICRO- AND NANO-STRUCTURED LED AND OLED DEVICES - Structured LED devices and component structures with improved efficiency and reduced defects are enabled by the use of micro- or nano-structured features that reduce lattice strain and improve p-doping in inorganic LEDs, and facilitate carrier injection and recombination of OLEDs. The nanostructures can also confine current flow and provide internal light guiding to enhance efficiency and thereby improve device performance. | 2011-07-14 |
20110168977 | SEMICONDUCTOR LAYER STRUCTURE WITH SUPERLATTICE - An optoelectronic component including a semiconductor layer structure, the semiconductor layer structure including a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element, at least two layers of the same type having a different content of the at least one element, the content of the at least one element is graded within a layer of the superlattice, and the layers of the superlattice contain dopants in predefined concentrations, with the superlattice comprising layers that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice can be adapted in the best possible manner to given requirements, particularly epitaxial constraints. | 2011-07-14 |
20110168978 | High Efficiency Thermoelectric Materials and Devices - Growth of thermoelectric materials in the form of quantum well superlattices on three-dimensionally structured substrates provide the means to achieve high conversion efficiency of the thermoelectric module combined with inexpensiveness of fabrication and compatibility with large scale production. Thermoelectric devices utilizing thermoelectric materials in the form of quantum well semiconductor superlattices grown on three-dimensionally structured substrates provide improved thermoelectric characteristics that can be used for power generation, cooling and other applications. | 2011-07-14 |
20110168979 | Superlattice Structure - A superlattice layer including a plurality of periods, each of which is formed from a plurality of sub-layers is provided. Each sub-layer comprises a different composition than the adjacent sub-layer(s) and comprises a polarization that is opposite a polarization of the adjacent sub-layer(s). In this manner, the polarizations of the respective adjacent sub-layers compensate for one another. | 2011-07-14 |
20110168980 | Nanofiber composite, method of manufacturing the same, and field effect transistor including the same - A nanofiber composite including a nanofiber formed of a hydrophobic polymer, a nanowire formed of a conductive or semiconductive organic material that is oriented in the nanofiber in the longitudinal direction of the nanofiber, and an ionic active material. | 2011-07-14 |
20110168981 | NANOTUBE ARRAY BIPOLAR TRANSISTORS - Carbon nanotube (CNT)-based devices and technology for their fabrication are disclosed. The planar, multiple layer deposition technique and simple methods of change of the nanotube conductivity type during the device processing are utilized to provide a simple and cost effective technology for large scale circuit integration. Such devices as p-n diode, CMOS-like circuit, bipolar transistor, light emitting diode and laser are disclosed, all of them are expected to have superior performance then their semiconductor-based counterparts due to excellent CNT electrical and optical properties. When fabricated on semiconductor wafers, the CNT-based devices can be combined with the conventional semiconductor circuit elements, thus producing hybrid devices and circuits. | 2011-07-14 |
20110168982 | NANOWIRE PIN TUNNEL FIELD EFFECT DEVICES - A method for forming a nanowire tunnel device includes forming a nanowire suspended by a first pad region and a second pad region over a semiconductor substrate, forming a gate structure around a channel region of the nanowire, implanting a first type of ions at a first oblique angle in a first portion of the nanowire and the first pad region, and implanting a second type of ions at a second oblique angle in a second portion of the nanowire and the second pad region. | 2011-07-14 |
20110168983 | Semiconductor Device and Manufacturing Method Thereof - Disclosed are a semiconductor device and a manufacturing method thereof. The semiconductor device can include a recess formed in an active area of a semiconductor substrate, an insulating layer formed in the recess, a source electrode and a drain electrode spaced apart from the source electrode on the insulating layer, a carbon nanotube layer formed between the source and drain electrodes, an oxide layer pattern covering at least the carbon nanotube layer, and a gate electrode formed on the oxide layer pattern. | 2011-07-14 |
20110168984 | VISIBLE/NEAR-INFRARED PORPHYRIN-TAPE/C60 ORGANICPHOTODETECTORS - Porphyrin compounds are provided. The compounds may further comprise a fused polycyclic aromatic hydrocarbon or a fused heterocyclic aromatic. Fused polycyclic aromatic hydrocarbon s and fused heterocyclic aromatics may extend and broaden absorption, and modify the solubility, crystallinity, and film-forming properties of the porphyrin compounds. Additionally, devices comprising porphyrin compounds are also provided. The porphyrin compounds may be used in a donor/acceptor configuration with compounds, such as C | 2011-07-14 |
20110168985 | Organic Light Emitting Diode Display Device and Method of Manufacturing the Same - An organic light emitting diode display device and a method of manufacturing the same are disclosed. The organic light emitting diode display device includes a substrate having an emission section and anon-emission section, a semiconductor layer located on the substrate, a gate dielectric layer located over an entire front surface of the substrate, a gate electrode located in correspondence to the semiconductor layer, a dielectric layer located over the entire front surface of the substrate, source and drain electrodes and a first electrode located on the dielectric layer and electrically connected to the semiconductor layer, a pixel definition layer exposing a part of the first electrode, a spacer located on the pixel definition layer and located on the non-emission section of the substrate, an organic film layer located on the first electrode, and a second electrode located over the entire front surface of the substrate. | 2011-07-14 |
20110168986 | THIN FILM DEPOSITION APPARATUS, METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE BY USING THE APPARATUS, AND ORGANIC LIGHT-EMITTING DISPLAY DEVICE MANUFACTURED BY USING THE METHOD - A thin film deposition apparatus, a method of manufacturing an organic light-emitting display device by using the thin film deposition apparatus, and an organic light-emitting display device manufactured by using the method. The thin film deposition apparatus includes: a deposition source that discharges a deposition material; a deposition source nozzle unit disposed at a side of the deposition source and including a plurality of deposition source nozzles arranged in a first direction; a patterning slit sheet disposed opposite to the deposition source nozzle unit and including a plurality of patterning slits having different lengths arranged in the first direction; and a barrier plate assembly disposed between the deposition source nozzle unit and the patterning slit sheet in the first direction, and including a plurality of barrier plates that partition a space between the deposition source nozzle unit and the patterning slit sheet into a plurality of sub-deposition spaces, wherein the thin film deposition apparatus is separated from the substrate by a predetermined distance, and the thin film deposition apparatus and the substrate are movable relative to each other. | 2011-07-14 |
20110168987 | Organic Electronic Device - An organic electronic device comprising: an anode; a hole injecting layer; a cathode; and organic semiconductive material disposed between the hole injecting layer and the cathode, wherein the cathode comprises an electron-injecting material having a higher electron-injection efficiency than BaO/Al, and wherein the hole injecting layer comprises a hole injecting material which has a lower workfunction than PEDOT:PSS (1:6). | 2011-07-14 |
20110168988 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An OLED display is disclosed. The display includes: a substrate main body, and an organic light emitting diode (OLED) formed on above the substrate main body, where the OLED includes: a first electrode injecting holes, a second electrode injecting electrons, an emission layer formed between the first and second electrodes, a hole injection layer (HIL) and a hole transport layer (HTL) sequentially formed between the first electrode and the emission layer, and a semi-transparent layer formed between the first electrode and the emission layer in red and green pixels. | 2011-07-14 |
20110168989 | High-molecule-based organic light-emitting diode and fabrication method thereof - The present invention discloses a high-molecule-based organic light-emitting diode (OLED) and a fabrication method thereof. The high-molecule-based OLED comprises a layer selected from a group consisting of an organic emissive layer, a first emission-auxiliary layer and a second emission-auxiliary layer. The organic emissive layer, first emission-auxiliary layer or second emission-auxiliary layer comprises a molecular material having a molecular weight of larger than approximately 730 g mol | 2011-07-14 |
20110168990 | ORGANIC ELECTROLUMINESCENT DEVICE, DISPLAY, AND ILLUMINATING DEVICE - An organic electroluminescent element including at least an emission layer sandwiched between an anode and a cathode, wherein the emission layer comprises at least a compound represented by Formula (A), | 2011-07-14 |
20110168991 | MOLECULAR ELEMENT, MANUFACTURING METHOD THEREOF, INTEGRATED CIRCUIT DEVICE, MANUFACTURING METHOD THEREOF, THREE-DIMENSIONAL INTEGRATED CIRCUIT DEVICE, AND MANUFACTURING METHOD THEREOF - In one example embodiment, a molecular element is configured by bridging a gap between a source electrode and a drain electrode by a functional molecule. The functional molecule arises from covalent linkage of a side chain composed of a pendant molecule that has dielectric constant anisotropy and/or dipole moments and in which orientation change occurs due to an electric field to a main chain composed of a conjugated molecule in which structural change occurs due to the orientation change of the pendant molecule and an electrical characteristic changes. The molecular element is made to work as a diode, a transistor, or a memory by an electric field applied to the pendant molecule of the functional molecule by gate electrodes. | 2011-07-14 |
20110168992 | NOVEL COMPOUND, METHOD FOR PREPARING SAME AND ORGANIC ELECTRONIC DEVICE USING SAME - The present invention relates to a novel compound, a method for manufacturing the same, and an organic electronic device using the same, and the novel compound according to the present invention may act as a hole injection, hole transport, electron injection and transport, or light emitting material in an organic light emitting device and an organic electronic device, and the device according to the present invention shows excellent properties in terms of efficiency, a driving voltage, and stability. | 2011-07-14 |
20110168993 | Transistors and methods of manufacturing the same - Transistors and methods of manufacturing the same. A transistor may be an oxide thin film transistor (TFT) with a self-aligned top gate structure. The transistor may include a gate insulating layer between a channel region and a gate electrode that extends from two sides of the gate electrode. The gate insulating layer may cover at least a portion of source and drain regions. | 2011-07-14 |
20110168994 | SPUTTERING TARGET FOR OXIDE THIN FILM AND PROCESS FOR PRODUCING THE SPUTTERING TARGET - Disclosed is a sputtering target that can suppress the occurrence of anomalous discharge in the formation of an oxide semiconductor film by sputtering method and can continuously and stably form a film. Also disclosed is an oxide for a sputtering target that has a rare earth oxide C-type crystal structure and has a surface free from white spots (a poor appearance such as concaves and convexes formed on the surface of the sputtering target). Further disclosed is an oxide sintered compact that has a bixbyite structure and contains indium oxide, gallium oxide, and zinc oxide. The composition amounts (atomic %) of indium (In), gallium (Ga), and zinc (Zn) fall within a composition range satisfying the following formula: In/(In+Ga+Zn)<0.75 | 2011-07-14 |
20110168995 | Accurate Capacitance Measurement for Ultra Large Scale Integrated Circuits - Test structures and methods for measuring contact and via parasitic capacitance in an integrated circuit are provided. The accuracy of contact and via capacitance measurements are improved by eliminating not-to-be-measured capacitance from the measurement results. The capacitance is measured on a target test structure that has to-be-measured contact or via capacitance. Measurements are then repeated on a substantially similar reference test structure that is free of to-be-measured contact or via capacitances. By using the capacitance measurements of the two test structures, the to-be-measured contact and via capacitance can be calculated. | 2011-07-14 |
20110168996 | Polycrystalline heterostructure infrared detector - A midwave infrared lead salt photodetector manufactured by a process comprising the step of employing molecular beam epitaxy (MBE) to grow a heterostructure photoconductive detector with a wide-gap surface layer that creates a surface channel for minority carriers. | 2011-07-14 |
20110168997 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A thin film transistor (TFT) array substrate and a manufacturing method thereof are provided. The TFT array substrate may include a gate line disposed on a substrate and including a gate line and a gate electrode, an oxide semiconductor layer pattern disposed on the gate electrode, a data line disposed on the oxide semiconductor layer pattern and including a source electrode and a drain electrode of a thin film transistor (TFT) together with the gate electrode, and a data line extending in a direction intersecting the gate line, and etch stop patterns disposed at an area where the TFT is formed between the source/drain electrodes and the oxide semiconductor layer pattern and at an area where the gate line and the data line overlap each other between the gate line and the data line. | 2011-07-14 |
20110168998 | DUAL-GATE TRANSISTOR AND PIXEL STRUCTURE USING THE SAME - A dual-gate transistor includes a first gate formed on a substrate, a first dielectric layer covering the first gate and the substrate, a semiconductor layer formed on the first dielectric layer, first and second electrodes formed on the semiconductor layer and spaced with an interval in order to separate each other, a second dielectric layer covering the first and second electrodes, and a second gate formed on the second dielectric layer, in which at least one of the first and second gates is non-overlapped with the second electrode. | 2011-07-14 |
20110168999 | Semiconductor wire grid, display apparatus having the same, and method of manufacturing the display apparatus - A semiconductor wire grid may include a plurality of wires arranged separately on a substrate, formed of a semiconductor, and including a groove therebetween, wherein conductivity of the semiconductor wire grid varies according to an applied voltage such that a polarization rate of the semiconductor wire grid is controlled. | 2011-07-14 |
20110169000 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a first light blocking pattern formed on a base substrate, a first switching element, a second light blocking pattern formed on the base substrate, and a first sensing element. The first light blocking pattern is configured to block visible light and transmit infrared light. The first switching element includes a first semiconductor pattern, a first source electrode, a first drain electrode, and a first gate electrode. The second light blocking pattern is configured to block the visible light and transmit the infrared light. The first sensing element is configured to detect the infrared light, and includes a second semiconductor pattern, a second source electrode, a second drain electrode, and a second gate electrode. | 2011-07-14 |
20110169001 | DISPLAY DEVICE, SWITCHING CIRCUIT AND FIELD EFFECT TRANSISTOR - A this film transistor is provided. The thin film transistor includes a semiconductor layer including a source region, a drain region, and a channel region, wherein the channel region is provided between the source region and the drain region; and a gate electrode overlapping with the channel region, wherein the channel region includes at least a portion of a channel width that is configured to at least one of continuously decrease and continuously increase in a lengthwise direction. | 2011-07-14 |
20110169002 | PIXEL STRUCTURE - A pixel structure includes a substrate, a gate and a pixel electrode that are disposed on the substrate, a patterned dielectric layer and a patterned semiconductor layer disposed on the gate, a source and a drain disposed on two sides of the patterned semiconductor layer respectively, and a passivation layer disposed on the source, the drain and the semiconductor layer. The sidewall surfaces of the source and the drain are completely covered with the passivation layer, but a part of the pixel electrode is exposed by the passivation layer. | 2011-07-14 |
20110169003 | CONTACT STRUCTURE AND SEMICONDUCTOR DEVICE - To improve the reliability of contact with an anisotropic conductive film in a semiconductor device such as a liquid crystal display panel, a terminal portion ( | 2011-07-14 |
20110169004 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR - An active matrix substrate of a display device of the present invention comprises a glass substrate, a plurality of connection terminals ( | 2011-07-14 |
20110169005 | SEMICONDUCTOR DEVICE | 2011-07-14 |
20110169006 | OXIDE THIN FILM TRANSISTORS AND METHODS OF MANUFACTURING THE SAME - Example embodiments are directed to oxide thin film transistors and methods of manufacturing the oxide thin film transistors. The oxide thin film transistor includes an active region in a gate insulation layer and under a source and a drain in a bottom gate structure, thus improving electrical characteristics of the oxide thin film transistor. | 2011-07-14 |
20110169007 | STRUCTURES INCLUDING PASSIVATED GERMANIUM - A passivated germanium surface that is a germanium carbide material formed on and in contact with the termanium material. An intermediate semiconductor device structure and a semiconductor device structure, each of which comprises the passivated germanium having germanium carbide material thereon, are also disclosed. | 2011-07-14 |
20110169008 | Semiconductor Device - A light emitting device capable of performing signal electric current write-in operations at high speed and without dispersion in the characteristics of TFTs structuring pixels influencing the brightness of light emitting elements is provided. The gate length L of a transistor in which an electric current flows during write-in of a signal electric current is made shorter than the gate length L of a transistor in which electric current supplied to EL elements flows during light emission, and high speed write-in is thus performed by having a larger electric current flow than the electric current flowing in conventional EL elements. A converter and driver transistor ( | 2011-07-14 |
20110169009 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - In an organic light emitting diode (OLED) display and a manufacturing method thereof, the OLED display includes a substrate main body; an insulation layer pattern formed on the substrate main body, and including a first thickness layer and a second thickness layer thinner than the first thickness layer; a metal catalyst that is scattered on the first thickness layer of the insulation layer pattern; and a polycrystalline semiconductor layer formed on the insulation layer pattern, and divided into a first crystal area corresponding to the first thickness layer and to a portion of the second thickness layer adjacent to the first thickness layer and a second crystal area corresponding to the remaining part of the second thickness layer. The first crystal area of the polycrystalline semiconductor layer is crystallized through the metal catalyst, and the second crystal area of the polycrystalline semiconductor layer is solid phase crystallized. | 2011-07-14 |
20110169010 | Organic light emitting diode display device and method of fabricating the same - An organic light emitting diode display device and a method of manufacturing thereof, the device including a substrate, the substrate including a pixel part and a circuit part; a first semiconductor layer and a second semiconductor layer on the pixel part of the substrate; a gate insulating layer on an entire surface of the substrate; gate electrodes on the gate insulating layer, the gate electrodes corresponding to the first semiconductor layer and the second semiconductor layer, respectively; source/drain electrodes insulated from the gate electrodes, the source/drain electrodes being connected to the first and second semiconductor layers, respectively; a first electrode connected to the source/drain electrodes of the first semiconductor layer; an organic layer on the first electrode; a second layer on the organic layer; and a metal catalyst layer under the first semiconductor layer. | 2011-07-14 |
20110169011 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The present invention improves the aperture ratio of a pixel of a reflection-type display device or a reflection type display device without increasing the number of masks and without using a blackmask. A pixel electrode ( | 2011-07-14 |
20110169012 | NANOWIRE AND LARGER GaN BASED HEMTS - Nanowire and larger, post-based HEMTs, arrays of such HEMTs, and methods for their manufacture are provided. In one embodiment, a HEMT can include a III-N based core-shell structure including a core member (e.g., GaN), a shell member (e.g., AlGaN) surrounding a length of the core member and a two-dimensional electron gas (2-DEG) at the interface therebetween. The core member including a nanowire and/or a post can be disposed over a doped buffer layer and a gate material can be disposed around a portion of the shell member. Exemplary methods for making the nanowire HEMTs and arrays of nanowire HEMTs can include epitaxially forming nanowire(s) and epitaxially forming a shell member from each formed nanowire. Exemplary methods for making the post HEMTs and arrays of post HEMTs can include etching a III-N layer to form II-N post(s) followed by formation of the shell member(s). | 2011-07-14 |
20110169013 | GROWING POLYGONAL CARBON FROM PHOTORESIST - A method of growing polygonal carbon from photoresist and resulting structures are disclosed. Embodiments of the invention provide a way to produce polygonal carbon, such as graphene, by energizing semiconductor photoresist. The polygonal carbon can then be used for conductive paths in a finished semiconductor device, to replace the channel layers in MOSFET devices on a silicon carbide base, or any other purpose for which graphene or graphene-like carbon material formed on a substrate is suited. In some embodiments, the photoresist layer forms both the polygonal carbon layer and an amorphous carbon layer over the polygonal carbon layer, and the amorphous carbon layer is removed to leave the polygonal carbon on the substrate. | 2011-07-14 |
20110169014 | COMPOUND SEMICONDUCTOR DEVICE - A compound semiconductor device includes: an electron transit layer made of GaN; a channel layer made of AlGaN; a source electrode, a gate electrode and a drain electrode that are provided on the channel layer; a cap layer that is provided at least between the source electrode and the gate electrode and between the gate electrode and the drain electrode and is made of GaN; a recess portion that is provided in the cap layer between the gate electrode and the drain electrode; and a thick portion that is provided in the cap layer between the recess portion and the drain electrode and has a thickness larger than the recess portion. | 2011-07-14 |
20110169015 | BIPOLAR SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - Disclosed is a bipolar semiconductor device which is capable of reducing the surface state density of a bipolar transistor and increasing the current gain of the transistor, thereby improving the transistor performance. A bipolar semiconductor device ( | 2011-07-14 |
20110169016 | MOSFET AND METHOD FOR MANUFACTURING MOSFET - A MOSFET includes: a silicon carbide (SiC) substrate having a main surface having an off angle of not less than 50° and not more than 65° relative to a {0001} plane; a semiconductor layer formed on the main surface of the SiC substrate; and an insulating film formed in contact with a surface of the semiconductor layer. The MOSFET has a sub-threshold slope of not more than 0.4 V/Decade. | 2011-07-14 |
20110169017 | Electronic devices comprising electrodes that connect to conductive members within a substrate and processes for forming the electronic devices - An electronic device includes a substrate. The substrate includes a first pixel driving circuit, a first conductive member, and a second conductive member. The first and second conductive members are spaced apart from each other. The first conductive member is connected to the first pixel driving circuit. The second conductive member is part of a power transmission line. The electronic device further includes a well structure overlying the substrate and defining a pixel opening, a via, and a channel. The pixel opening is connected to the via through the channel. In addition, the electronic device includes a first electronic component. The electronic component includes a first electrode that contacts the first conductive member in the pixel opening, a second electrode that contacts the second conductive member in the via, and an organic layer lying between the first and second electrodes. | 2011-07-14 |
20110169018 | Liquid Crystal Display Device - An exemplary liquid crystal display device includes a data line, a pixel, a first gate line, a second gate line, an additional electrode and an additional gate line. The pixel includes a first sub-pixel and a second sub-pixel. The first gate line is electrically coupled to the first sub-pixel. The second gate line is electrically coupled to the second sub-pixel. The first sub-pixel is electrically coupled to the data line to receive a signal provided from the data line. The second sub-pixel is electrically coupled to the first sub-pixel through the additional electrode and to receive a signal provided from the data line through the first sub-pixel. The additional gate line is arranged crossing over the additional electrode and whereby a compensation capacitance is formed between the additional gate line and the additional electrode. | 2011-07-14 |
20110169019 | Display cell, display apparatus and method for making same - In an electrophoretic display device comprising a plurality of pixels, each pixel having a cell area containing a plurality of charged pigment particles dispersed between two opposite electrodes, a semiconducting passivation layer is provided on one or both of the two opposite electrodes. The semiconducting passivation layer can be made of MO | 2011-07-14 |
20110169020 | SIDE MOUNTABLE SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGES, PANELS AND METHODS OF FORMING THE SAME - Side-mountable semiconductor light emitting device packages include an electrically insulating substrate having a front face and a back face and a side face extending therebetween. The side face is configured for mounting on an underlying surface. An electrically conductive contact is provided proximate an edge of the substrate on the back face of the substrate and/or on a recessed region on the side face of the substrate. The contact is positioned to be positioned proximate an electrical connection region of the underlying surface when the semiconductor light emitting device package is side mounted on the underlying surface. A conductive trace extends along the front face of the substrate and is electrically connected to the contact. A semiconductor light emitting device is mounted on the front face of the substrate and electrically connected to the conductive trace. | 2011-07-14 |
20110169021 | PACKAGE OF LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - Provided is a package of a light emitting diode. The package according to an embodiment includes a base layer, a light emitting diode chip on the base layer, a lead frame electrically connected to the light emitting diode chip, a reflective coating layer directly on the lead frame, and a molding material covering the light emitting diode chip in a predetermined shape. | 2011-07-14 |
20110169022 | BOARD MODULE AND METHOD OF MANUFACTURING SAME - A liquid crystal display device ( | 2011-07-14 |
20110169023 | METHODS FOR MAKING QUASI-VERTICAL LIGHT EMITTING DIODES - A method of making quasi-vertical light emitting devices includes growing semiconductor layers on a growth substrate and etching the semiconductor layers to produce device isolation trenches forming separable semiconductor devices and holes. Blind holes are drilled in the substrate at the location of each of the holes in the semiconductor layers. The drilling of the blind holes defines blind hole walls and a blind hole end in each of the blind holes. N-semiconductor metal is deposited in each of the blind holes. An n-electrode contact is formed in each of the blind holes by plating each of the blind holes with an n-electrode metal connected to the n-semiconductor metal. The substrate is thinned to expose the n-electrode metal as an n-electrode. Bonding metal is deposited to the n-electrode for packaging. | 2011-07-14 |
20110169024 | Device and Method for Lighting - A method is presented for reducing the light output capacity of light emitting components (C | 2011-07-14 |
20110169025 | SEMICONDUCTOR OPTICAL ELEMENT ARRAY AND METHOD OF MANUFACTURING THE SAME - The present invention provides a semiconductor optical element array including: a semiconductor substrate having a main surface in which a plurality of concave portions is formed; a mask pattern that is formed on the main surface of the semiconductor substrate and includes a plurality of opening portions provided immediately above the plurality of concave portions; a plurality of fine columnar crystals that is made of a group-III nitride semiconductor grown from the plurality of concave portions to the upper side of the mask pattern through the plurality of opening portions; an active layer that is grown on each of the plurality of fine columnar crystals; and a semiconductor layer covering each of the active layers. | 2011-07-14 |
20110169026 | Light Guide for LED Source - A device to emit light includes a light emitting diode (LED) die and a light guide coupled to the LED die. The light guide includes a first material having a first index of refraction with a plurality of apertures arranged in a grid. A second material having a second index of refraction that is larger than the first index of refraction fills the plurality of apertures. Each aperture extends from a first end adjacent the LED die to a larger second end. The first end may be a circle of approximately 1 to 2 μm in diameter. The distance between the first and second ends may be from approximately 10 to 20 μm. Each aperture may be in the form of a frustrated cone having an included angle between the sides from approximately 3 to 7 degrees. The light guide may be formed on a transparent substrate. | 2011-07-14 |
20110169027 | Patterning Method of Metal Oxide Thin Film Using Nanoimprinting, and Manufacturing Method of Light Emitting Diode - Disclosed are a patterning method of a metal oxide thin film using nanoimprinting, and a manufacturing method of a light emitting diode (LED). The method for forming a metal oxide thin film pattern using nanoimprinting includes: coating a photosensitive metal-organic material precursor solution on a substrate; preparing a mold patterned to have a protrusion and depression structure; pressurizing the photosensitive metal-organic material precursor coating layer with the patterned mold; forming a cured metal oxide thin film pattern by heating the pressurized photosensitive metal-organic material precursor coating layer or by irradiating ultraviolet rays to the pressurized photosensitive metal-organic material precursor coating layer while being heated; and removing the patterned mold from the metal oxide thin film pattern, and selectively further includes annealing the metal oxide thin film pattern. Within this, there is provided a method for forming a metal dioxe thin film pattern using nano imprinting, which makes it possible to simplify the process for forming the pattern since the process of separately applying the ultraviolet resin to be used as the resist can be omitted, and forms a micro/nano composite pattern through a single imprint process. | 2011-07-14 |
20110169028 | LIGHT EMITTING DEVICE CHIP, LIGHT EMITTING DEVICE PACKAGE - Disclosed are a light emitting device chip, a light emitting device package, and a lighting system. The light emitting device chip includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer interposed between the first and second conductive semiconductor layers; a transmittive layer on the light emitting structure; and a luminescence material layer on the transmittive layer, wherein the luminescence material layer includes a pattern, which does not expose the transmittive layer, partially exposes the transmittive layer or partially exposes the transmittive layer and the light emitting structure. | 2011-07-14 |
20110169029 | OPTOELECTRONIC COMPONENT AND PACKAGE FOR AN OPTOELECTRONIC COMPONENT - Optoelectronic components with a semiconductor chip, which is suitable for emitting primary electromagnetic radiation, a basic package body, which has a recess for receiving the semiconductor chip and electrical leads for the external electrical connection of the semiconductor chip, and a chip encapsulating element, which encloses the semiconductor chip in the recess. The basic package body is at least partly optically transmissive at least for part of the primary radiation and an optical axis of the semiconductor chip runs through the basic package body. The basic package body comprises a luminescence conversion material, which is suitable for converting at least part of the primary radiation into secondary radiation with wavelengths that are at least partly changed in comparison with the primary radiation. | 2011-07-14 |
20110169030 | LIGHT EMITTING DIODE WITH HIGH ASPECT RATIO SUBMICRON ROUGHNESS FOR LIGHT EXTRACTION AND METHODS OF FORMING - The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE process is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device. | 2011-07-14 |
20110169031 | SOLID STATE LIGHTING DEVICE WITH IMPROVED HEATSINK - A solid state lighting device includes a device-scale stamped heatsink with a base portion and multiple segments or sidewalls projecting outward from the base portion, and dissipates all steady state thermal load of a solid state emitter to an ambient air environment. The heatsink is in thermal communication with one or more solid state emitters, and may define a cup-like cavity containing a reflector. At least a portion of each one sidewall portion or segment extends in a direction non-parallel to the base portion. A dielectric layer and at least one electrical trace may be deposited over a metallic sheet to form a composite sheet, and the composite sheet may be processed by stamping and/or progressive die shaping to form a heatsink with integral circuitry. At least some segments of a heatsink may be arranged to structurally support a lens and/or reflector associated with a solid state lighting device. | 2011-07-14 |