28th week of 2012 patent applcation highlights part 14 |
Patent application number | Title | Published |
20120175577 | ILLUMINATIVE JACK - An illuminative jack is described; the jack contains a pair of side walls spaced apart from one another. Each side wall has a front portion, an intermediate region, and an end portion. The jack includes a lift arm which has a first end which is pivotally connected to the intermediate regions of the side walls and a second end close to the front portions. A lifting plate is connected to the second end of the lift arm, the plate is designed to engage a lifting location of an object to be lifted. Finally, the jack includes several lights recessed within the plate and a shield material for the lights. | 2012-07-12 |
20120175578 | SECURITY FENCE FOR SWIMMING POOLS - A security fence for swimming pools is provided to be so positioned as to surround the water of a swimming pool. The security fence comprises fence sections which are linked to an alarm system. The fence sections are moveable between a non-signaling position and an alarm signaling position. When the fence sections are in the non-signaling position and a given fence section is engaged with sufficient force it is moved to the alarm signaling position thereby signaling the alarm. The foregoing prevents a user, such as a child, from entering the pool water when the alarm system has been activated. | 2012-07-12 |
20120175579 | FENCING SYSTEM - A customizable decorative fencing system. A plurality of stakes, configured to be driven into the ground at selected positions, have projecting portions projecting above the ground. Posts have cavities in lower distal ends thereof. Any stake projecting portion is configured to slide into any post cavity, and be frictionally, removably, interchangeably retained therein. Fence components, including base units, gate units, and end units, include post collars, and hinge collars, respectively, through which any post can slide. Removability and interchangeability of posts with respect to fence components, and removability and interchangeability of posts with respect to stakes, provides for an infinite number of possible fence configurations. | 2012-07-12 |
20120175580 | VARIABLE RESISTANCE MEMORY - A method of fabricating a phase change memory includes forming a lower electrode on a semiconductor substrate, forming a phase change pattern, an upper electrode, and a hard mask pattern sequentially on the lower electrode, a width of a bottom surface of the hard mask pattern being greater than a width of a top surface of the hard mask pattern, the bottom surface of the hard mask pattern facing the upper electrode and being opposite the top surface of the hard mask pattern, and forming a capping layer to cover the top surface of the hard mask pattern and sidewalls of the hard mask pattern, phase change pattern, and upper electrode. | 2012-07-12 |
20120175581 | SWITCHING DEVICE AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME - A semiconductor memory device using a diode as a switching device is disclosed. The switching device may enhance on and off characteristics at the same time. The switching device includes a diode including a first conductive layer and a second conductive layer stacked therein, where the first conductive layer and the second conductive layer have complementary conductive types to each other, a control electrode surrounding the first conductive layer, and an insulation layer disposed between the first conductive layer and the control electrode. | 2012-07-12 |
20120175582 | PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - The PCRAM device includes a semiconductor substrate including a switching device; an interlayer insulating layer having a heating electrode contact hole exposing the switching device, a heating electrode formed to be extended along a side of the interlayer insulating layer in the heating electrode contact hole, wherein the heating electrode has a width gradually increased toward a bottom of the heating electrode and is in contact with the switching device, first and second phase-change layers formed within the heating electrode contact hole that includes the heating electrode, and a phase-change separation layer formed in the heating electrode contact hole between the first and second phase-change layers. | 2012-07-12 |
20120175583 | MEMRISTOR APPARATUS - A memristor apparatus comprising a plurality of meta-stable switching elements. | 2012-07-12 |
20120175584 | STRUCTURES FOR RADIATION DETECTION AND ENERGY CONVERSION USING QUANTUM DOTS - Inorganic semiconducting materials such as silicon are used as a host matrix in which quantum dots reside to provide a radiation detector or energy converter. The quantum dot material may be disposed by incorporating materials sensitive to neutron detection such as boron-containing compounds, or the use of methods such as chemical vapor deposition or atomic layer deposition to insert the quantum dot material. Electrodes may be extended deep into the host matrix material to improve efficiency. Likewise, the host matrix may be machined to create pores in the matrix material. Further, amplification and signal-processing structures may be used in close proximity to the radiation-sensitive region of the device. | 2012-07-12 |
20120175585 | CAGE NANOSTRUCTURES AND PREPARTION THEREOF - A unique family of nanoparticles characterized by their nanometric size and cage-like shapes (hollow structures), capable of holding in their hollow cavity a variety of materials is disclosed herein. | 2012-07-12 |
20120175586 | SILICON-GERMANIUM, QUANTUM-WELL, LIGHT-EMITTING DIODE - A silicon-germanium, quantum-well, light-emitting diode ( | 2012-07-12 |
20120175587 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device is herein disclosed. The semiconductor light emitting device includes: a conductive substrate, a p-type semiconductor layer disposed on the conductive substrate, an active layer disposed on the p-type semiconductor layer, an n-type semiconductor layer disposed on the active layer, and an n-side electrode disposed on the n-type semiconductor layer and including a carbon nanotube layer doped with an n-type impurity. | 2012-07-12 |
20120175588 | SEMICONDUCTOR NANOCRYSTALS USED WITH LED SOURCES - The present invention relates to the use of light-converting, colloidal, doped semiconductor nanocrystals to provide a new generation of high performance, low cost monochromatic and white light sources based on LEDs. | 2012-07-12 |
20120175589 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME - A nitride semiconductor device is provided, in which a superlattice strain buffer layer using AlGaN layers having a low Al content or GaN layers is formed with good flatness, and a nitride semiconductor layer with good flatness and crystallinity is formed on the superlattice strain buffer layer. A nitride semiconductor device includes a substrate; an AlN strain buffer layer made of AlN formed on the substrate; a superlattice strain buffer layer formed on the AlN strain buffer layer; and a nitride semiconductor layer formed on the superlattice strain buffer layer, and is characterized in that the superlattice strain buffer layer has a superlattice structure formed by alternately stacking first layers made of Al | 2012-07-12 |
20120175590 | LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING LIGHT EMITTING DEVICE - A method for producing a light-emitting device, includes: performing, on a first substrate made of III-V group compound semiconductor, crystal growth of a laminated body including an etching easy layer contiguous to the first substrate and a light-emitting layer made of nitride semiconductor; bonding a second substrate and the laminated body; and detaching the second substrate provided with the light-emitting layer from the first substrate by, one of removing the etching easy layer by using a solution etching method, and removing the first substrate and the etching easy layer by using mechanical polishing method. | 2012-07-12 |
20120175591 | LIGHT EMITTING DEVICE - A light emitting device including a substrate, a first conductive semiconductor layer on the substrate, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, and a reflective layer under the substrate and including a light reflection pattern configured to reflect light emitted by the active layer in directions away from the reflective layer. | 2012-07-12 |
20120175592 | LIGHT-EMITTING DEVICE - A light-emitting device is disclosed. The light-emitting device comprises an epitaxial structure comprising a lower cladding layer of first conductivity type, an active layer comprising InGaN or AlGaInN on the lower cladding layer, and an upper cladding layer of second conductivity type on the active layer; a tunneling structure on the epitaxial structure comprising a first tunneling layer of second conductivity type with a doping concentration greater than 6×10 | 2012-07-12 |
20120175593 | Nanograin Material and Photoelectric Conversion Device - A quantum dot, which is an ultrafine grain, has a core-shell structure having a core portion and a shell portion protecting the core portion. The surface of the shell portion is covered with two kinds of surfactants, a hole-transporting surfactant and an electron-transporting surfactant, which are concurrently present. Moreover, the hole-transporting surfactant has a HOMO level which tunneling-resonates with the valence band of the quantum dot and the electron-transporting surfactant has a LUMO level which tunneling-resonates with the transfer band of the quantum dot. Thus, a nanograin material which has good carrier transport efficiency and is suitable for use in a photoelectric conversion device is achieved. | 2012-07-12 |
20120175594 | Graphene Devices with Local Dual Gates - An electronic device comprises an insulator, a local first gate embedded in the insulator with a top surface of the first gate being substantially coplanar with a surface of the insulator, a first dielectric layer formed over the first gate and insulator, and a channel. The channel comprises a bilayer graphene layer formed on the first dielectric layer. The first dielectric layer provides a substantially flat surface on which the channel is formed. A second dielectric layer formed over the bilayer graphene layer and a local second gate formed over the second dielectric layer. Each of the local first and second gates is capacitively coupled to the channel of the bilayer graphene layer. The local first and second gates form a first pair of gates to locally control a first portion of the bilayer graphene layer. | 2012-07-12 |
20120175595 | Graphene Electronic Device And Method Of Fabricating The Same - A graphene electronic device includes a graphene channel layer on a substrate, a source electrode on an end portion of the graphene channel layer and a drain electrode on another end portion of the graphene channel layer, a gate oxide on the graphene channel layer and between the source electrode and the drain electrode, and a gate electrode on the gate oxide. The gate oxide has substantially the same shape as the graphene channel layer between the source electrode and the drain electrode. | 2012-07-12 |
20120175596 | ELECTRICALLY CONDUCTIVE POLYMER COMPOSITIONS FOR COATING APPLICATIONS - The present invention relates to electrically conductive polymer compositions, and their use in electronic devices. The compositions contain a semi-aqueous dispersion of at least one electrically conductive polymer doped with at least one highly-fluorinated acid polymer, non-conductive oxide nanoparticles, at least one high-boiling organic liquid, and at least one lower-boiling organic liquid. | 2012-07-12 |
20120175597 | Image Sensor And Method Of Manufacturing The Same - An image sensor and a method of manufacturing the same. The image sensor includes a plurality of photoelectric conversion units that are horizontally arranged and selectively emit electric signals by absorbing color beams. | 2012-07-12 |
20120175598 | CARBAZOLE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT DEVICES UTILIZING THE SAME AND FABRICATION METHOD THEREOF - The present invention provides a carbazole derivative of formula (I) for an organic electroluminescent device: | 2012-07-12 |
20120175599 | COMPOUND HAVING CARBAZOLE RING STRUCTURE, AND ORGANIC ELECTROLUMINESCENT DEVICE - [Problem] An organic compound of excellent characteristics is provided that exhibits excellent hole-injecting/transporting performance with electron blocking ability, and that has high stability in the thin-film state and high luminous efficiency, the organic compound being provided as material for an organic electroluminescent device having high efficiency and high durability. The invention also provides a high-efficient, high-durable organic electroluminescent device using the compound. | 2012-07-12 |
20120175600 | AROMATIC AMINE DERIVATIVE, AND ORGANIC ELECTROLUMINESCENT ELEMENT - Provided is an organic electroluminescence device that provides high efficiency and a long lifetime. The device includes an aromatic amine including at least one substituent A having dibenzofuran and at least one substituent B selected from groups having dibenzofuran or carbazole. The substituent A and the substituent B include groups different from each other and are bonded to the same or different nitrogen atoms in the molecule. The molecules of the aromatic amine hardly crystallize, improving yield in producing the organic electroluminescence device. The device includes an organic thin film layer formed of one or more layers including at least a light emitting layer, the organic thin film layer being interposed between a cathode and an anode. The aromatic amine is contained in at least one layer, particularly a hole transport layer, in the organic thin film layer. | 2012-07-12 |
20120175601 | DISPLAY UNIT - A display unit that secures favorable display performance and has a simple structure is provided. The display unit includes a multilayer structure in which an organic light emitting device group respectively having a plurality of organic light emitting devices that emits cyan light and a plurality of organic light emitting devices that emits magenta light and a color filter group having a plurality of blue filters that transmit blue light and a plurality of yellow filters that transmit yellow light are sequentially layered. In the display unit, the cyan light and the magenta light entering from the organic light emitting device group to the color filter group is converted to blue light by the blue filter, and is respectively converted to green light and red light by the yellow filter. Therefore, compared to a case that the organic light emitting device group emits white light, color separation is more facilitated. | 2012-07-12 |
20120175602 | N-TYPE ORGANIC THIN FILM TRANSISTOR, AMBIPOLAR FIELD-EFFECT TRANSISTOR, AND METHOD OF FABRICATING THE SAME - An N-type organic thin film transistor, an ambipolar field-effect transistor, and methods of fabricating the same are disclosed. The N-type organic thin film transistor of the present invention comprises: a substrate; a gate electrode locating on the substrate; a gate-insulating layer covering the gate electrode, and the gate-insulating layer is made of silk protein; a buffering layer locating on the gate-insulating layer, and the buffering layer is made of pentacene; an N-type organic semiconductor layer locating on the buffering layer; and a source and a drain electrode, wherein the N-type organic semiconductor layer, the buffering layer, the source and the drain electrode are disposed over the gate dielectric layer. | 2012-07-12 |
20120175603 | ORGANIC EL DISPLAY PANEL AND METHOD FOR PRODUCING SAME - Provided is an organic EL display panel that improves aperture ratio by providing a contact hole beneath an aperture in a bank, and that prevents shortening of the display panel's lifetime by avoiding electric field concentration. An organic EL display panel includes a TFT layer; an interlayer insulation film on the TFT layer and having a plurality of contact holes one per pixel; a plurality of first electrodes, one per pixel, on the interlayer insulation film; a bank defining a plurality of apertures, at least one per pixel, and at least one contact hole is located beneath each aperture; a plurality of organic light-emitting layers each in an aperture; and a second electrode above the organic light-emitting layers. In each aperture, a thickness of the organic light-emitting layer is greater at a portion within the contact hole region than at a portion outside the contact hole region. | 2012-07-12 |
20120175604 | LIQUID ORGANIC SEMICONDUCTOR MATERIAL - An organic material having at least one aromatic conjugated π-electron system is selected. The purity of the organic material is improved by purification, and a conduction mechanism of the organic material is confirmed by a time-of-flight method, whereby a liquid phase of the organic material is usable as an organic semiconductor. A method that enables the usage of a liquid phase of an organic material as an organic semiconductor is provided. The method involves confirming the electronic conduction of the organic material having at least one aromatic conjugated π-electron system by evaluation of a charge transport property using a time-of-flight method, and by evaluation of a dilution effect caused by addition of a diluent. | 2012-07-12 |
20120175605 | Organic light-emitting display device and method of manufacturing the same - A design for an organic light-emitting display device that increases capacitor capacity and increases aperture ratio by forming an initializing voltage electrode on a different layer than an electrode of the capacitor and forming only one via hole for an entire set of three sub-pixels. One of the source electrodes and the drain electrodes of switching transistors for the three sub-pixels are formed in common, along with the gate electrodes of the switching transistors. | 2012-07-12 |
20120175606 | EPITAXIAL STRUCTURE - An epitaxial structure is provided. The epitaxial structure includes a substrate, an epitaxial layer and a carbon nanotube layer. The epitaxial layer is located on the substrate. The carbon nanotube layer is located between the substrate and the epitaxial layer. The carbon nanotube layer can be a carbon nanotube film drawn from a carbon nanotube array and including a plurality of successive and oriented carbon nanotubes joined end-to-end by van der Waals attractive force therebetween. | 2012-07-12 |
20120175607 | THIN FILM TRANSISTOR STRUCTURE AND MANUFACTURING METHOD THEREOF - A thin film transistor (TFT) structure includes a substrate, a gate, a gate dielectric layer, a source, a drain and a transparent material layer. The gate is formed on the substrate; the gate dielectric layer is formed on the gate; the source and the drain are formed on the gate dielectric layer; and the transparent material layer has a channel area and an insulating area, and the channel area is disposed on a portion of the gate dielectric layer located between the source and the drain; and the insulating area is disposed on the channel area, the source and the drain. | 2012-07-12 |
20120175608 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The semiconductor device includes a gate electrode over a substrate, a gate insulating layer over the gate electrode, an oxide semiconductor layer over the gate insulating layer, and a source electrode and a drain electrode over the oxide semiconductor layer. A length of part of an outer edge of the oxide semiconductor layer from an outer edge of the source electrode to an outer edge of the drain electrode is more than three times, preferably more than five times as long as a channel length of the semiconductor device. Further, oxygen is supplied from the gate insulating layer to the oxide semiconductor layer by heat treatment. In addition, an insulating layer is formed after the oxide semiconductor layer is selectively etched. | 2012-07-12 |
20120175609 | Semiconductor device and manufacturing method thereof - A first oxide insulating film is formed over a substrate. After a first oxide semiconductor film is formed over the first oxide insulating film, heat treatment is performed, so that hydrogen contained in the first oxide semiconductor film is released and part of oxygen contained in the first oxide insulating film is diffused into the first oxide semiconductor film. Thus, a second oxide semiconductor film with reduced hydrogen concentration and reduced oxygen defect is formed. Then, the second oxide semiconductor film is selectively etched to form a third oxide semiconductor film, and a second oxide insulating film is formed. The second oxide insulating film is selectively etched and a protective film covering an end portion of the third oxide semiconductor film is formed. Then, a pair of electrodes, a gate insulating film, and a gate electrode are formed over the third oxide semiconductor film and the protective film. | 2012-07-12 |
20120175610 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device includes the steps of: forming a gate electrode over a substrate; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film; performing heat treatment to form a second oxide semiconductor film after the step of forming the first oxide semiconductor film; forming a first conductive film; forming a first resist mask including regions whose thicknesses are different; etching the second oxide semiconductor film and the first conductive film using the first resist mask to form a third oxide semiconductor film and a second conductive film; reducing the size of the first resist mask to form a second resist mask; selectively etching the second conductive film using the second resist mask to remove a part of the second conductive film so that a source electrode and a drain electrode are formed. | 2012-07-12 |
20120175611 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DISPLAY UNIT - A thin film transistor having (a) an oxide semiconductor film including a channel region composed of an oxide semiconductor, and a source electrode region and a drain electrode region that are composed of the same oxide semiconductor as that of the channel region and have a higher carrier density than that of the channel region; (b) a gate insulating film; and (c) a gate electrode. | 2012-07-12 |
20120175612 | TEST STRUCTURE FOR DETERMINATION OF TSV DEPTH - A test structure for a through-silicon-via (TSV) in a semiconductor chip includes a first contact, the first contact being electrically connected to a first TSV; and a second contact, wherein the first contact, second contact, and the first TSV form a first channel, and a depth of the first TSV is determined based on a resistance of the first channel. | 2012-07-12 |
20120175613 | POLYCRYSTALLINE SILICON MASS AND PROCESS FOR PRODUCING POLYCRYSTALLINE SILICON MASS - The present invention provides a clean and high-purity polycrystalline silicon mass having a small content of chromium, iron, nickel, copper, and cobalt in total, which are heavy metal impurities that reduce the quality of single-crystal silicon. In the vicinity of an electrode side end of a polycrystalline silicon rod obtained by the Siemens method, the total of the chromium, iron, nickel, copper, and cobalt concentrations is high. Accordingly, before a crushing step of a polycrystalline silicon rod | 2012-07-12 |
20120175614 | TRANSISTOR INCLUDING MULTI-LAYER REENTRANT PROFILE - A transistor includes a substrate. A first electrically conductive material layer is positioned on the substrate. A second electrically conductive material layer is in contact with and positioned on the first electrically conductive material layer. A third electrically conductive material layer is in contact with and positioned on the second electrically conductive material layer. The third electrically conductive material layer overhangs the second electrically conductive material layer. | 2012-07-12 |
20120175615 | Organic Light-Emitting Display and Method of Manufacturing the Same - In an organic light-emitting display having superior image quality and device reliability, and a related method of manufacturing the organic light-emitting display, the organic light-emitting display comprises: a gate electrode formed on a substrate; an interlayer insulating film formed on the substrate so as to cover the gate electrode; and a transparent electrode formed on the interlayer insulating film. The interlayer insulating film comprises multiple layers having different refractive indices. | 2012-07-12 |
20120175616 | Thin Film Field Effect Transistor with Dual Semiconductor Layers - A thin film field effect transistor is disclosed which provides improved time-based channel stability. The field effect transistor includes first and second disordered semiconductor layers separated by an insulator. In an embodiment a carrier injection terminal is provided in a thin semiconductor layer closest to the gate terminal. An electric field is established in the thin semiconductor layer. At sufficient field strength, the electric field extends into the second semiconductor layer, which is in contact with the source and drain terminals. At sufficient field strength a channel is established in the second semiconductor layer, permitting current to flow between source and drain terminals. Above a certain gate voltage, there is sufficient free charge is induced in the first semiconductor layer so that the field does not extend into the second semiconductor, effectively shutting off current between source and drain. Single-device transition detection (as well as other applications) may be obtained. | 2012-07-12 |
20120175617 | Organic Light-Emitting Display Device and Method of Manufacturing the Same - In an organic light-emitting display device and a method of manufacturing the same, the organic light-emitting display device comprises: a substrate including a transistor region; a buffer layer and a semiconductor layer sequentially formed on the substrate; a gate electrode formed on the semiconductor layer; an interlayer insulating film formed on the gate electrode; source and drain electrodes, each formed on the interlayer insulating film and having a portion penetrating the interlayer insulating film so as to contact the semiconductor layer; a mask pattern formed on each of the source and drain electrodes; and a pixel defined layer formed on the mask pattern. | 2012-07-12 |
20120175618 | RADIATION IMAGING DEVICE, RADIATION IMAGING DISPLAY SYSTEM, AND TRANSISTOR - There are provided a transistor and a radiation imaging device in which a shift in a threshold voltage due to radiation exposure may be suppressed. The transistor includes a first gate electrode, a first gate insulator, a semiconductor layer, a second gate insulator, and a second gate electrode in this order on a substrate. Each of the first and second gate insulators includes one or a plurality of silicon compound films having oxygen, and a total sum of thicknesses of the silicon compound films is 65 nm or less. | 2012-07-12 |
20120175619 | DISPLAY DEVICE - A structure for preventing deteriorations of a light-emitting device and retaining sufficient capacitor elements (condenser) required by each pixel is provided. A first passivation film, a second metal layer, a flattening film, a barrier film, and a third metal layer are stacked in this order over a transistor. A side face of a first opening provided with the flattening film is covered by the barrier film, a second opening is formed inside the first opening, and a third metal layer is connected to a semiconductor via the first opening and the second opening. A capacitor element that is formed of a lamination of a semiconductor of a transistor, a gate insulating film, a gate electrode, the first passivation film, and the second metal layer is provided. | 2012-07-12 |
20120175620 | Light-Emitting Device and Method of Manufacturing the Same, and Method of Operating Manufacturing Apparatus - The inventors have anticipated that there is no problem in employing electron gun deposition as a method of forming a metallic layer on an EL layer of an active matrix light-emitting device because the TFT of the active matrix light-emitting device is disposed below the EL layer. However, since the TFT is extremely sensitive to ionized evaporated particles, the secondary electron, the reflecting electron, and so on generated by the electron gun, while little damage is observed on the EL layer, significant damage is found on the TFT when electron gun deposition is employed. The invention provides an active matrix light-emitting device having superior TFT characteristics (ON current, OFF to current, Vth, S-value, and so on), in which an organic compound layer and a metallic layer (cathode or anode) are formed by means of resistive heating having least influence to the TFT. | 2012-07-12 |
20120175621 | MANUFACTURING OF ELECTRONIC COMPONENTS - According to an aspect of the invention, a method is provided for manufacturing electronic components. A conducting element comprising a first portion, a second portion and a third portion between the first portion and the second portion is provided. Thermally responsive dielectric material is added at least onto the third portion of the conducting element. Electric current is supplied between the first portion and the second portion of the conducting element causing ohmic heating to affix dielectric material located on the third portion to the third portion. Non-thermally-affixed dielectric material is removed. | 2012-07-12 |
20120175622 | METHOD FOR PRODUCING A SILICON INGOT - Method for producing a silicon ingot, comprising the following steps: providing a container to receive a silicon melt, providing a temperature control device to control the temperature of the silicon melt in the container, arranging raw material in the container comprising silicon and at least one nucleation agent to assist a heterogeneous nucleation in the silicon melt, and control of the temperature in the container for the directed solidification of the silicon melt , the nucleation agent comprising nanoscale particles. | 2012-07-12 |
20120175623 | TRANSISTOR INCLUDING MULTIPLE REENTRANT PROFILES - A transistor includes a substrate. A first electrically conductive material layer is positioned on the substrate. A second electrically conductive material layer is in contact with and positioned on the first electrically conductive material layer. The second electrically conductive material layer includes a reentrant profile. The second electrically conductive material layer also overhangs the first electrically conductive material layer. | 2012-07-12 |
20120175624 | IMPLEMENTING VERTICAL SIGNAL REPEATER TRANSISTORS UTILIZING WIRE VIAS AS GATE NODES - A method and structures are provided for implementing vertical transistors utilizing wire vias as gate nodes. The vertical transistors are high performance transistors fabricated up in the stack between the planes of the global signal routing wire, for example, used as vertical signal repeater transistors. An existing via or a supplemental vertical via between wire planes provides both an electrical connection and the gate node of the novel vertical transistor. | 2012-07-12 |
20120175625 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A transistor having an oxide semiconductor film in a channel formation region and a manufacturing method thereof are disclosed. The transistor is formed by the steps of: forming a base insulating over a substrate; forming an oxide semiconductor film over the base insulating film; forming a conductive film over the oxide semiconductor film; processing the conductive film to form a source electrode and a drain electrode; processing the oxide semiconductor film; forming a gate insulating film over the source electrode, the drain electrode, and the oxide semiconductor film; and forming a gate electrode over the gate insulating film. The aforementioned manufacturing method allows the formation of a transistor in which a side surface of the oxide semiconductor film is not in direct contact with bottom surfaces of the source electrode and the drain electrode, which contributes to the extremely small leak current of the transistor. | 2012-07-12 |
20120175626 | IMPLEMENTING SEMICONDUCTOR SOC WITH METAL VIA GATE NODE HIGH PERFORMANCE STACKED TRANSISTORS - A method and structures are provided for implementing metal via gate node high performance stacked vertical transistors in a back end of line (BEOL) on a semiconductor System on Chip (SoC). The high performance stacked vertical transistors include a pair of stacked vertical field effect transistors (FETs) formed by polycrystalline depositions in a stack between planes of a respective global signal routing wire. A channel length of each of the stacked vertical FETs is delineated by the polycrystalline depositions with sequential source deposition, channel deposition and drain deposition; and a wire via defines the gate node. | 2012-07-12 |
20120175627 | Dual Gate Layout for Thin Film Transistor - A dual gate layout of a thin film transistor of liquid crystal display to alleviate dark current leakage is disclosed. The layout includes (1) a polysilicon on a substrate having a shaped of L- or of snake from top-view, having a heavily doped source region, a first lightly doped region, a first gate channel, a second lightly doped region, a second gate channel, a third lightly doped region and a heavily doped drain region formed in order therein; (2) a gate oxide layer formed on the poly-Si layer and the substrate, (3) a gate metal layer then formed on the gate oxide layer having a scanning line and an extension portion with a L-shaped or an I-shaped. The gate metal intersects with the poly-Si layer thereto define the forgoing gate channels. Among of gate channels, at least one is along the signal line through a source contact. | 2012-07-12 |
20120175628 | LIGHT EMITTING DIODES AND METHOD FOR MANUFACTURING THE SAME - An exemplary LED includes an electrode layer, an LED die, a transparent electrically conductive layer, and an electrically insulating layer. The electrode layer includes a first section and a second section electrically insulated from the first section. The LED die is arranged on and electrically connected to the second section of the electrode layer. The transparent electrically conductive layer is formed on the LED die and electrically connects the LED die to the first section of the electrode layer. The electrically insulating layer is located between the LED die and the transparent electrically conductive layer to insulate the transparent electrically conductive layer from the second section of the electrode layer. | 2012-07-12 |
20120175629 | SEMICONDUCTOR EPITAXIAL STRUCTURE - A semiconductor epitaxial structure is provided. The semiconductor epitaxial structure includes a substrate, a doped semiconductor epitaxial layer, and a carbon nanotube layer. The doped semiconductor epitaxial layer is located on the substrate. The carbon nanotube layer is located between the substrate and the doped semiconductor epitaxial layer. The carbon nanotube layer can be a carbon nanotube film drawn from a carbon nanotube array and including a plurality of successive and oriented carbon nanotubes joined end-to-end by van der Waals attractive force therebetween. | 2012-07-12 |
20120175630 | LIGHT EMITTING DIODES AND METHOD FOR MANUFACTURING THE SAME - An LED comprises an electrode layer comprising a first a second sections electrically insulated from each other; an electrically conductive layer on the second section, an electrically conductive pole protruding from the electrically conductive layer; an LED die comprising an electrically insulating substrate on the electrically conductive layer, and a P-N junction on the electrically insulating substrate, the P-N junction comprising a first electrode and a second electrode, the electrically conductive pole extending through the electrically insulating substrate to electrically connect the first electrode to the second section; a transparent electrically conducting layer on the LED die, the transparent electrically conducting layer electrically connecting the second electrode to the first section; and an electrically insulating layer between the LED die, the electrically conductive layer, and the transparent electrically conducting layer, wherein the electrically insulating layer insulates the transparent electrically conducting layer from the electrically conductive layer and the second section. | 2012-07-12 |
20120175631 | ENHANCEMENT MODE GaN HEMT DEVICE WITH GATE SPACER AND METHOD FOR FABRICATING THE SAME - Enhancement-mode GaN devices having a gate spacer, a gate metal material and a gate compound that are self-aligned, and a methods of forming the same. The materials are patterned and etched using a single photo mask, which reduces manufacturing costs. An interface of the gate spacer and the gate compound has lower leakage than the interface of a dielectric film and the gate compound, thereby reducing gate leakage. In addition, an ohmic contact metal layer is used as a field plate to relieve the electric field at a doped III-V gate compound corner towards the drain contact, which leads to lower gate leakage current and improved gate reliability. | 2012-07-12 |
20120175632 | LIGHT EMITTING DEVICE - The light emitting device, and corresponding method of manufacture, the light emitting device including a second electrode layer; a second conductive type semiconductor layer formed on the second electrode layer; an active layer formed on the second conductive type semiconductor layer; a first conductive type semiconductor layer formed with a first photonic crystal that includes a mask layer and an air gap formed on the active layer; and a first electrode layer formed on the first conductive type semiconductor layer. | 2012-07-12 |
20120175633 | NITRIDE SEMICONDUCTOR SUBSTRATE - A nitride semiconductor substrate is featured in comprising: a GaN semiconductor layer grown on a base layer, which has a substantially triangular cross-section along the thickness direction thereof, a periodic stripe shapes, and uneven surfaces arranged on the stripes inclined surfaces; and an overgrown layer composed of AlGaN or InAlGaN on the GaN semiconductor layer. | 2012-07-12 |
20120175634 | Transistor Arrangement with a First Transistor and with a Plurality of Second Transistors - A transistor arrangement includes a first transistor having a drift region and a number of second transistors, each having a source region, a drain region and a gate electrode. The second transistors are coupled in series to form a series circuit that is coupled in parallel with the drift region of the first transistor. | 2012-07-12 |
20120175635 | Semiconductor Device Arrangement with a First Semiconductor Device and with a Plurality of Second Semiconductor Devices - A semiconductor device arrangement includes a first semiconductor device having a load path, and a number of second transistors, each having a load path between a first and a second load terminal and a control terminal. The second transistors have their load paths connected in series and connected in series to the load path of the first transistor. Each of the second transistors has its control terminal connected to the load terminal of one of the other second transistors. One of the second transistors has its control terminal connected to one of the load terminals of the first semiconductor device. | 2012-07-12 |
20120175636 | PHOTODIODE DEVICE BASED ON WIDE BANDGAP MATERIAL LAYER AND BACK-SIDE ILLUMINATION (BSI) CMOS IMAGE SENSOR AND SOLAR CELL INCLUDING THE PHOTODIODE DEVICE - According to example embodiments, a photodiode system may include a substrate, and at least one photodiode in the substrate, and a wideband gap material layer on a first surface of the substrate. The at least one photodiode may be between an insulating material in a horizontal plane. According to example embodiments, a back-side-illumination (BSI) CMOS image sensor and/or a solar cell may include a photodiode device. The photodiode device may include a substrate, at least one photodiode in the substrate, a wide bandgap material layer on a first surface of the substrate, and an anti-reflective layer (ARL) on the wide bandgap material layer. | 2012-07-12 |
20120175637 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - According to one embodiment, a semiconductor device including: a substrate; a gate electrode formed above the substrate; a gate insulating film formed under the gate electrode; a channel layer formed under the gate insulating film by using a channel layer material; a source region and a drain region formed in the substrate so as to interpose the channel layer therebetween in a channel direction; and a source extension layer formed in the substrate between the channel layer and the source region so as to overlap a source-side end portion of the channel layer. The source extension layer forms a heterointerface with the channel layer. The heterointerface is a tunnel channel for carries. | 2012-07-12 |
20120175638 | SEMICONDUCTOR DEVICE - A MOSFET includes: a silicon carbide substrate having a main surface having an off angle of not less than 50° and not more than 65° relative to a {0001} plane; an active layer; a gate oxide film; a p type body region having p type conductivity and formed to include a region of the active layer, the region being in contact with the gate oxide film; an n | 2012-07-12 |
20120175639 | TANTALUM CARBIDE, METHOD FOR PRODUCING TANTALUM CARBIDE, TANTALUM CARBIDE WIRING AND TANTALUM CARBIDE ELECTRODE - It is an object of the present invention to provide a method for manufacturing tantalum carbide which can form tantalum carbide having a prescribed shape using a simple method, can form the tantalum carbide having a uniform thickness even when the tantalum carbide is coated on the surface of an article and is not peeled off by a thermal history, tantalum carbide obtained by the manufacturing method, wiring of tantalum carbide, and electrodes of tantalum carbide. | 2012-07-12 |
20120175640 | SEMICONDUCTOR DEVICES HAVING TENSILE AND/OR COMPRESSIVE STRESS AND METHODS OF MANUFACTURING - Semiconductor devices are provided which have a tensile and/or compressive strain applied thereto and methods of manufacturing. The structure includes a gate stack comprising an oxide layer, a polysilicon layer and sidewalls with adjacent spacers. The structure further includes an epitaxially grown straining material directly on the polysilicon layer and between portions of the sidewalls. The epitaxially grown straining material, in a relaxed state, strains the polysilicon layer. | 2012-07-12 |
20120175641 | DIAMOND N-TYPE SEMICONDUCTOR, METHOD OF MANUFACTURING THE SAME, SEMICONDUCTOR DEVICE, AND ELECTRON EMITTING DEVICE - The present invention relates to a diamond n-type semiconductor in which the amount of change in carrier concentration is fully reduced in a wide temperature range. The diamond n-type semiconductor comprises a diamond substrate, and a diamond semiconductor formed on a main surface thereof and turned out to be n-type. The diamond semiconductor exhibits a carrier concentration (electron concentration) negatively correlated with temperature in a part of a temperature region in which it is turned out to be n-type, and a Hall coefficient positively correlated with temperature. The diamond n-type semiconductor having such a characteristic is obtained, for example, by forming a diamond semiconductor doped with a large amount of a donor element while introducing an impurity other than the donor element onto the diamond substrate. | 2012-07-12 |
20120175642 | MICROCHIP-BASED MOEMS AND WAVEGUIDE DEVICE - An electro-optical device | 2012-07-12 |
20120175643 | Packaging Photon Building Blocks Having Only Top Side Connections in an Interconnect Structure - Standardized photon building blocks are used to make both discrete light emitters as well as array products. Each photon building block has one or more LED chips mounted on a substrate. No electrical conductors pass between the top and bottom surfaces of the substrate. The photon building blocks are supported by an interconnect structure that is attached to a heat sink. Landing pads on the top surface of the substrate of each photon building block are attached to contact pads disposed on the underside of a lip of the interconnect structure. In a solder reflow process, the photon building blocks self-align within the interconnect structure. Conductors on the interconnect structure are electrically coupled to the LED dice in the photon building blocks through the contact pads and landing pads. The bottom surface of the interconnect structure is coplanar with the bottom surfaces of the substrates of the photon building blocks. | 2012-07-12 |
20120175644 | DISPLAYS WITH EMBEDDED MEMS SENSORS AND RELATED METHODS - Embodiments of displays with embedded MEMS sensors and related methods are described herein. Other embodiments and related methods are also disclosed herein. | 2012-07-12 |
20120175645 | ORGANIC EL DISPLAY DEVICE AND ELECTRONIC APPARATUS - An organic EL display device includes organic EL elements provided for respective pixels. Each organic EL element has first and second electrodes between which an organic layer is provided and has a region that contributes to light emission and a region that does not contribute to light emission. A capacitor is formed between the first and second electrodes in the region that does not contribute to light emission and is used as a capacitance element in a drive circuit for the organic EL element. | 2012-07-12 |
20120175646 | LIGHT EMITTING DIODE MODULE - An LED module includes a base, a circuit layer formed on the base and multiple LEDs each having an LED die connecting to the circuit layer. The circuit layer includes multiple connecting sections. Each connecting section includes a first connecting part and a second connecting part electrically insulating and spaced from each other. Each LED includes an electrode layer having a first section and a second section electrically insulated from the first section and respectively electrically connecting the first and second connecting parts of a corresponding connecting section. The LED die is electrically connected to the second section. A transparent electrically conductive layer is formed on the LED die and electrically connects the LED die to the first section of the electrode layer. An electrically insulating layer is located between the LED die and surrounding the LED die except where the transparent electrically conductive layer connects. | 2012-07-12 |
20120175647 | DISPLAY DEVICE AND ELECTRONIC APPARATUS - A display device including: a plurality of sub-pixels arranged in a matrix, each including an electro-optical element having a structure in which a display functional layer is sandwiched between an upper electrode and a lower electrode; and an auxiliary interconnect contact in a pixel area in which the plurality of sub-pixels are arranged in a matrix and electrically connecting the upper electrode to an auxiliary interconnect, wherein m (m is an integer equal to or larger than two) sub-pixels adjacent to each other along an arrangement direction of the sub-pixels are regarded as one group, and n (n is a natural number smaller than m) auxiliary interconnect contacts are formed for each group. | 2012-07-12 |
20120175648 | DISPLAY PANEL DEVICE, DISPLAY DEVICE, AND METHOD OF MANUFACTURING DISPLAY PANEL DEVICE - Provided is a display panel device including a pixel unit including a luminescent layer, and a lens that covers a luminescent region of the luminescent layer placed above the pixel unit and that transmits light emitted from the luminescent layer. The height between a luminescent face of the luminescent region and an apex of the lens is uniform along the straight line in the long axis direction of the luminescent region. Furthermore, at both end parts of the lens, a cross-section of the light emitting side corresponding to the long axis direction of the luminescent region has a shape of an elliptic arc having a predetermined curvature. | 2012-07-12 |
20120175649 | Capacitor Device and Display Apparatus Having the Same - A capacitor device prevents capacitor failure and pixel failure by preventing the capacitor from experiencing a short circuit caused by disconnection of a bridge formed between electrodes of the capacitor and a display apparatus having the capacitor device. A display device comprises a thin film transistor, a light emitting device, and the capacitor device described above. | 2012-07-12 |
20120175650 | ILLUMINATING DEVICE AND DISPLAY DEVICE - An illuminating device ( | 2012-07-12 |
20120175651 | LIGHT EMITTNG MODULE, METHOD OF MANUFACTURING THE SAME AND DISPLAY APPARATUS HAVING THE SAME - A light emitting module includes a light emitting package and a lead frame. The light emitting package includes a light emitting chip emitting light, a first lead electrically connected to the light emitting chip, and a second lead spaced apart from the first lead and electrically connected to the light emitting chip. The light emitting package is mounted on the lead frame. The lead frame includes a third lead electrically connected to the first lead, a fourth lead electrically connected to the second lead and a molding part including the third lead and the fourth lead therein. | 2012-07-12 |
20120175652 | METHOD AND APPARATUS FOR IMPROVED SINGULATION OF LIGHT EMITTING DEVICES - The present invention is a system and method for laser-assisted singulation of light emitting electronic devices manufactured on a substrate, having a processing surface and a depth extending from the processing surface. It includes providing a laser processing system having a picosecond laser having controllable parameters; controlling the laser parameters to form light pulses from the picosecond laser, to form a modified region having a depth which spans about 50% of the depth and substantially including the processing surface of the substrate and having a width less than about 5% of the region depth; and, singulating the substrate by applying mechanical stress to the substrate thereby cleaving the substrate into said light emitting electronic devices having sidewalls formed at least partially in cooperation with the linear modified regions. | 2012-07-12 |
20120175653 | LED CONNECTOR ASSEMBLY - An LED connector assembly includes a housing having a cavity formed therein. A connector interface is positioned on the housing to receive electrical wiring from a power source. An LED package is provided having at least one LED die coupled thereto. The LED package is removably received in the cavity of the housing and retained using features in the LED package and housing. The LED package is electrically coupled to the connector interface to provide power to the at least one LED die. | 2012-07-12 |
20120175654 | LIGHT EMITTING DEVICE HAVING AUTO-CLONING PHOTONIC CRYSTAL STRUCTURES AND MANUFACTURING METHOD THEREOF - A light emitting device having auto-cloning photonic crystal structures comprises a substrate, a first semiconductor layer, an active emitting layer, a second semiconductor layer and a saw-toothed multilayer film comprising auto-cloning photonic crystal structures. The saw-toothed multilayer film provides a high reflection interface and a diffraction mechanism to prevent total internal reflection and enhance light extraction efficiency. The manufacturing methods of the light emitting device having auto-cloning photonic crystal structures are also presented. | 2012-07-12 |
20120175655 | LIGHT EMITTING DIODE CUP LAMP - A light emitting diode (LED) cup lamp including a base, an LED light source and a light guiding device is disclosed. The LED light source is disposed on the base. The light guiding device is disposed above the LED light source. The light guiding device has a light guiding region facing the LED light source. After the light emitted from the LED light source is guided through the light guiding region, the light is further guided by other parts of the light guiding device so that the light is emitted towards the exterior of the LED cup lamp. | 2012-07-12 |
20120175656 | LIGHT EMITTING DIODE PACKAGE - A light emitting diode package includes a base, a chip mounted on the base, and an encapsulant layer encapsulating the chip. The encapsulant layer includes a light exit face for light generated generated by the chip transmitting through. A plurality of microstructures are formed on the light exit face. Distribution of the microstructures has the following characters: a density of the microstructures is inversely proportional to a light intensity of the light at the light exit face; and a size of the microstructures is inversely proportional to the light intensity of the light at the light exit face. | 2012-07-12 |
20120175657 | LIGHT-EMITTING DIODE LAMP WITH AN IMPROVED LEADFRAME - A leadframe includes two spaced apart conductive legs, each of which includes a base section, and a first extension section extending from a bottom end of the base section in a direction away from the other one of the conductive legs. At least one of the conductive legs further includes a second extension section that extends from a top end of the base section thereof in the same direction as the first extension section for fixing the light-emitting diode chip. The heat generated by the light-emitting diode chip can be dissipated through a shortest heat-dissipating route, thereby increasing the heat-dissipating rate. | 2012-07-12 |
20120175658 | PHOSPHOR PARTICLES, MAKING METHOD, AND LIGHT-EMITTING DIODE - Phosphor particles are provided in the form of spherical polycrystalline secondary particles consisting of a multiplicity of primary particles, including a garnet phase having the compositional formula: (A | 2012-07-12 |
20120175659 | LIGHT EMITTING DEVICE - A light emitting device having a plastic substrate is capable of preventing the substrate from deterioration with the transmission of oxygen or moisture content. The light emitting device has light emitting elements formed between a lamination layer and an inorganic compound layer that transmits visual light, where the lamination layer is constructed of one unit or two or more units, and each unit is a laminated structure of a metal layer and an organic compound layer. Alternatively, each unit is a laminated structure of a metal layer and an organic compound layer, wherein the inorganic compound layer is formed so as to cover the end face of the lamination layer. In the present invention, the lamination layer is formed on the primary surface of the plastic substrate, so that a flexible substrate structure can be obtained. | 2012-07-12 |
20120175660 | LIGHT-REFLECTIVE CONDUCTIVE PARTICLE, ANISOTROPIC CONDUCTIVE ADHESIVE AND LIGHT-EMITTING DEVICE - A light-reflective conductive particle for an anisotropic conductive adhesive used for anisotropic conductive connection of a light-emitting element to a wiring board includes a core particle coated with a metal material and a light-reflecting layer formed from light-reflective inorganic particles having a refractive index of 1.52 or more on a surface of the core particle. Examples of the light-reflective inorganic particles having a refractive index of 1.52 or more include titanium oxide particles, zinc oxide particles, or aluminum oxide particles. | 2012-07-12 |
20120175661 | SEMICONDUCTOR LIGHT EMITTING PACKAGE AND METHOD OF MANUFACTURING THE SAME - A semiconductor light emitting package includes a substrate, an encapsulating material, a semiconductor light emitting chip disposed on the substrate, wires; and an integrated glass-fluorescent powder compound light-emitting structure. The encapsulating material and the integrated glass-fluorescent powder compound light-emitting structure are packaged on the semiconductor light emitting chip, the integrated glass-fluorescent powder compound light-emitting structure is coated on the encapsulating material. The semiconductor light-emitting package has a large light-emitting area, high uniformity which can effectively avoid “halo” phenomenon, and long working life. The present invention also relates to a method for manufacturing semiconductor light emitting package, which can be implemented at low temperature and improve the reliability and the stability of the light-emitting property of the compound light-emitting structure. | 2012-07-12 |
20120175662 | VERTICAL LIGHT EMITTING DEVICE - According to an example embodiment, a vertical light emitting device (LED) includes a semiconductor layer including an active layer configured to emitting light, a first electrode on a first side of the semiconductor layer, and a second electrode on a second side of the semiconductor layer opposite to the first electrode. At least one of the first and second electrodes includes a metal electrode pattern and a transparent electrode pattern. The transparent electrode pattern is in a region between segment electrodes of the metal electrode pattern. The transparent electrode pattern is electrically connected to the metal electrode pattern. | 2012-07-12 |
20120175663 | COOLING UNIT USING IONIC WIND AND LED LIGHTING UNIT INCLUDING THE COOLING UNIT - A cooling unit includes a heat radiant having a heat radiating plate contacting a heating element, and a plurality of heat radiation pins protruding from the heat radiating plate and separated from each other with predetermined intervals therebetween, and formed of an electrical insulating material; and an ionic wind generating unit comprising a corona emitter electrode contacting at least one of the heat radiation pins, a collector electrode facing the corona emitter electrode, and a power unit to connect the corona emitter electrode to the collector electrode and to apply a high voltage to the corona emitter electrode. Thus, the corona emitter electrode and the collector electrode of the ionic wind generating unit may be directly attached to the heat radiant, and a small and light cooling unit may be formed. | 2012-07-12 |
20120175664 | LIGHTING DEVICE AND METHOD FOR FORMING THE SAME - The present invention provides a lighting device and method for forming the same. The lighting device comprises a base having a first surface, a conductive wiring layer formed on the first surface, and a light emitting diode module comprising a substrate and at least one light emitting diode disposed on the substrate wherein the substrate of the light emitting diode module is disposed on the conductive wiring layer by a surface mount method. In one embodiment, the base is preferably made of ceramics. | 2012-07-12 |
20120175665 | LIGHT-EMITTING DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME - A light-emitting device package includes: a package body on which a mount portion and a terminal portion are disposed; a light-emitting device chip that is mounted on the mount portion; and a bonding wire that electrically connects an electrode of the light-emitting device chip and the terminal portion. The bonding wire includes a rising portion that rises from the light-emitting device chip to a loop peak, and an extended portion that connects the loop peak and the terminal portion. A first kink portion, which is bent in a direction intersecting a direction in which the rising portion rises, is disposed on the rising portion. | 2012-07-12 |
20120175666 | ELECTRONIC DEVICE AND A METHOD OF MANUFACTURING THE SAME - The invention relates to a substantially transparent electronic device comprising a first contact surface provided with a first pattern of electrically conductive lines and a second contact surface provided with a second pattern of electrically conductive lines, the first contact surface extending parallel to the second contact surface, wherein the first pattern is rotationally displaced with respect to the second pattern by an angle between 15 and 165 degrees. The electrically conductive lines of the said first pattern and the said second pattern are substantially not transparent for visible light and are preferably used as shunting lines. The invention further relates to a method of manufacturing such device. | 2012-07-12 |
20120175667 | LED LIGHT DISPOSED ON A FLEXIBLE SUBSTRATE AND CONNECTED WITH A PRINTED 3D CONDUCTOR - An example includes subject matter (such as an apparatus) comprising a planar substrate including a first surface that is planar, at least one bare light emitting diode (“LED”) die coupled to the substrate and conductive ink electrically coupling the at least one bare LED die, wherein the conductive ink is disposed on the substrate and extends onto a surface of the LED that is out-of-plane from the first surface. | 2012-07-12 |
20120175668 | Electronic Component and Electrical Contact - An electronic component ( | 2012-07-12 |
20120175669 | LIGHT EMITTING DEVICE USING GaN LED CHIP - A light emitting device is constituted by flip-chip mounting a GaN-based LED chip. The GaN-based LED chip includes a light-transmissive substrate and a GaN-based semiconductor layer formed on the light-transmissive substrate, wherein the GaN-based semiconductor layer has a laminate structure containing an n-type layer, a light emitting layer and a p-type layer in this order from the light-transmissive substrate side, wherein a positive electrode is formed on the p-type layer, the electrode containing a light-transmissive electrode of an oxide semiconductor and a positive contact electrode electrically connected to the light-transmissive electrode, and the area of the positive contact electrode is half or less of the area of the upper surface of the p-type layer. | 2012-07-12 |
20120175670 | LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT, LIGHT EMITTING ELEMENT ASSEMBLY, AND METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT ASSEMBLY - A method for manufacturing a light emitting element including the steps of (A) sequentially forming on a substrate a first compound semiconductor layer having a first conduction type, an active layer, and a second compound semiconductor layer having a second conduction type; (B) forming a plurality of point-like hole portions in a thickness direction in at least a region of the second compound semiconductor layer located outside a region to be provided with a current confinement region; and (C) forming an insulating region by subjecting a part of the second compound semiconductor layer to an insulation treatment from side walls of the hole portions so as to produce the current confinement region surrounded by the insulating region in the second compound semiconductor layer. | 2012-07-12 |
20120175671 | Glued light core for light-emitting diode - The present invention relates to an improved glued light core for a light-emitting diode (LED), which provides an optical lamp body integrally formed on an upper end of an LED lead frame. In particular, the optical lamp body is designed as a glued structure with minimal epoxy, to simplify a complicated packaging operation in a conventional manufacturing process, to directly fasten a crystal cup, a crystal cell and a conductive gold wire to the upper end of the lead frame by the epoxy, and to provide illumination comparable to that of general light core. Additionally, a light-emitting housing is made of polychloroprene or plastic resin which is able to be applied or injected outside the glued light core, such that a light source inside the glued light core emits light beams through the light-emitting housing to form collection or stray lights of a special light source with multiple variations. Thus, the manufacturing process and multiple applications of the LED can be greatly simplified. | 2012-07-12 |
20120175672 | ESD PROTECTION CIRCUIT - An integrated circuit device provides electrostatic discharge (ESD) protection. In connection with various example embodiments, an ESD protection circuit includes a diode-type circuit having a p-n junction that exhibits a low breakdown voltage. Connected in series with the diode between an internal node susceptible to an ESD pulse and ground, are regions of opposite polarity having junctions therebetween for mitigating the passage of leakage current via voltage sharing with the diode's junction. Upon reaching the breakdown voltage, the diode shunts current to ground via another substrate region, bypassing one or more junctions of the regions of opposite polarity and facilitating a low clamping voltage. | 2012-07-12 |
20120175673 | SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF - A semiconductor device includes an output port that has a first lateral double diffused metal oxide semiconductor (LDMOS) device and an electrostatic discharge protection device that has a second LDMOS device and a bipolar transistor and that protects the output port from electrostatic discharge. A breakdown voltage of the second LDMOS device is equal to or lower than a breakdown voltage of the first LDMOS device. | 2012-07-12 |
20120175674 | POWER SWITCHES FOR AIRCRAFT - The present invention relates generally to power switches for aircraft. According to a first aspect, the present invention provides an integrated solid state power switch for fault protection in an aircraft power distribution system. The integrated solid state power switch is formed of semiconductor material that provides a field effect transistor (FET) channel that is operable during normal device operation to provide an operating current flow path and a bipolar transistor channel that is operable during device overload conditions to provide an overload current flow path. A method for manufacturing such an integrated solid state power switch is also described. Various embodiments of the invention provide automatic overload current protection for aircraft systems without the need to use bulky switches or heavy cooling equipment. | 2012-07-12 |
20120175675 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device and a method for manufacturing the same are disclosed. The method comprises: forming at least one trench in a first semiconductor layer, wherein at least lower portions of respective sidewalls of the trench tilt toward outside of the trench; filling a dielectric material in the trench, thinning the first semiconductor layer so that the first semiconductor layer is recessed with respect to the dielectric material, and epitaxially growing a second semiconductor layer on the first semiconductor layer, wherein the first semiconductor layer and the semiconductor layer comprise different materials from each other. According to embodiments of the disclosure, defects occurring during the heteroepitaxial growth can be effectively suppressed. | 2012-07-12 |
20120175676 | Inductively Coupled Photodetector and Method of Forming an Inductively Coupled Photodetector - A photodetector detects the absence or presence of light by detecting a change in the inductance of a coil. The magnetic field generated when a current flows through the coil passes through an electron-hole generation region. Charged particles in the electron-hole generation region come under the influence of the magnetic field, and generate eddy currents whose magnitudes depend on whether light is absent or present. The eddy currents generate a magnetic field that opposes the magnetic field generated by current flowing through the coil. | 2012-07-12 |