27th week of 2013 patent applcation highlights part 14 |
Patent application number | Title | Published |
20130168582 | VALVE ACTUATOR - The valve actuator ( | 2013-07-04 |
20130168583 | TOUCH SWITCH SHOWER - A touch switch shower includes a shower body and a switch control device. The shower body is disposed with a root waterway, several diversion waterways and an outlet cover unit, each diversion waterway is disposed with an electromagnetic valve to control the on-off thereof. The front side of the outlet cover unit is divided into several touch areas with the same number of electromagnetic valves. The switch control device is disposed at least a processing unit, several touch modules with same number with the electromagnetic valves and a power device connected to the processing unit, the touch layer of the touch module is separately disposed in the corresponding touch area of the outlet cover unit, the processing unit is connected to the touch module in signal way, the processing unit is connected to the electromagnetic valve in signal way. The touch layer is separately disposed in the touch area. | 2013-07-04 |
20130168584 | SOLENOID VALVE HAVING AIR TAP STRUCTURE - A solenoid valve includes a plunger, an actuating device, and an air tap assembly. The plunger is connected to the actuating device. The air tap assembly is secured to the actuating device and has a cavity. The air tap assembly includes a main body, and first and second tubes. The first tube protrudes from the main body and defines a first through hole. The main body defines a second through hole communicated with the first through hole and the cavity. The second tube defines a third through hole. The main body defines a fourth through hole extended from the third through hole and a fifth through hole extended from the fourth through hole to the cavity. The fifth and second through holes are parallel. The plunger head is used to seal the second and fifth through holes. | 2013-07-04 |
20130168585 | Magnet Coil Arrangement and Collection of Magnet Coil Arrangements - A magnet coil arrangement for an electromagnetically operated valve includes a coil that is electrically connectable to a current source by means of a base. The base is constructed in substantially two parts by a coil part and a connection part. A current source can be connected to contacts of the connection part, while the coil part has contacts which are electrically connected to the coil. The connection part and the coil part are connected by means of a connecting apparatus in order to be electrically and mechanically connected. | 2013-07-04 |
20130168586 | VALVE SEAT RETENTION PIN - Embodiments described herein relate to a retention pin for retaining a seat member in the body pocket of a gate valve. Two retention pins may be installed on the outer circumference of the seat member. The seat member is inserted into the body pocket and rotated so that the retention pins are positioned in grooves in the body pocket and the seat member is retained in the body pocket. | 2013-07-04 |
20130168587 | MOUNTING ASSEMBLIES FOR USE WITH FLUID CONTROL DEVICES - Mounting assemblies for use with fluid control devices are disclosed. An example apparatus includes a bonnet to be coupled to a valve and a mounting assembly including a first side to be coupled to an actuator and a second side to be rotatably coupled at an end of the bonnet to enable a rotational position of the mounting assembly to change relative to the bonnet. | 2013-07-04 |
20130168588 | PRESSURE RELIEF VENTING FOR A VALVE DISK SEAL - A valve (e.g., shutoff or regulating) is provided including a valve body having a fluid passage and a disc assembly. The disc assembly is pivotable within the fluid passage from an open position wherein the disc assembly is positioned within the fluid passage to provide for free flow of fluid through the fluid passage, to a closed position wherein the disc assembly is positioned within the fluid passage to substantially close off the fluid passage. The disc assembly includes a disc having a circumferential edge having a groove. A seal (e.g., an O-ring) is disposed in the groove. A pressure relief mechanism (e.g., a plurality of apertures) is provided adjacent to the seal to partially relieve differential pressure on the seal caused by fluid passing through the fluid passage. A similar valve having its seal located on the valve body is also provided. | 2013-07-04 |
20130168589 | HIGH TEMPERATURE BUTTERFLY VALVE - A high-temperature butterfly valve ( | 2013-07-04 |
20130168590 | BUTTERFLY VALVE - A butterfly valve ( | 2013-07-04 |
20130168591 | VALVE SEAT, VALVE WITH SEAT AND METHOD OF FITTING SEAT TO VALVE - A valve seat ( | 2013-07-04 |
20130168592 | Diaphragm Valve - The diaphragm valve includes an outer casing, a winding stand, a magnetizable valve core, a nozzle, a rubber diaphragm, a bottom seat, a bottom board, a spring, a rear lid and a copper pin. The rubber diaphragm is fixed at the front end of the valve core, and has a circumferential edge to communicate with the center of the rubber diaphragm through a resilient protruding ring. The nozzle has a flange, a radial hole and an eccentric axial hole. The nozzle is fixed at the front end of the winding stand by the flange. The flange has a stepped hole to mate with the circumferential edge of the rubber diaphragm, a central hole to mate with the center of the rubber diaphragm, and an eccentric hole. The stepped hole communicates with the radial hole through the central hole and communicates with the axial hole through the eccentric hole. | 2013-07-04 |
20130168593 | FIRE EXTINGUISHING COMPOSITION GENERATING FIRE EXTINGUISHING SUBSTANCE BY HIGH TEMPERATURE SUBLIMATION - The present invention relates to a fire extinguishing composition which generate fire extinguishing substance by high temperature sublimation; the fire extinguishing composition comprising a fire extinguishing material which, in a heating process, can sublimate and release a fire extinguishing substance with fire extinguishing properties; the content of the fire extinguishing material is at least 80 wt %. When the fire extinguishing composition is in use, a pyrotechnic agent as a heat source and a power source; and the purpose of fire extinguishing is achieved by: igniting the pyrotechnic agent, generating a large quantity of fire substance from the fire extinguishing composition in the use of high temperature produced by burning pyrotechnic agent, and the fire substance sprays out together with the pyrotechnic agent. When compared with traditional aerosol fire extinguishing systems, gas fire extinguishing systems and water type extinguishing systems, the present invention can provide a more efficient and safer fire extinguishing composition. | 2013-07-04 |
20130168594 | Collectors - Collectors for froth flotation including oxidized fatty acid compositions and oxidized and maleated compositions. In particular, use of oxidized tall oil compositions and oxidized and maleated fatty acid compositions are disclosed. | 2013-07-04 |
20130168595 | NANOMETER THERMAL INSULATION COATING AND METHOD OF MANUFACTURING THE SAME - A nanometer thermal insulation coating and a method of manufacturing the same is disclosed. The method includes the steps of : mixing and stirring nanometer metal oxide and stirring-assistant liquid to form the mixed paste; filtering and drying the mixed paste to form the dried mixed bulk; performing calcination to the dried mixed bulk to form the oxide solid solution bulk of antimony tin oxide/silicon oxide and/or vanadium dioxide/silicon oxide; adding dispersing-assistant liquid, mixing and sequentially mechanical stirring, performing ultrasonic resonance and high pressure homogenizing to form the elementary dispersion bulk; and adding mixing-assistant liquid, mixing and sequentially steps of mechanical stirring and high pressure homogenizing to form nanometer thermal insulation coating, suitable to apply on the glass to achieve the feature of thermal insulation. | 2013-07-04 |
20130168596 | Pb(Hf,Ti)O3 BASED HIGH PERFORMANCE POLYCRYSTALLINE PIEZOELECTRIC MATERIALS - A ternary polycrystalline material based on lead hafnate (PbHfO | 2013-07-04 |
20130168597 | Structured Layers Composed of Crosslinked or Crosslinkable Metal-Organic Compounds, Shaped Bodies Containing Them as well as Processes for Producing Them - The invention relates to a process for producing a structured shaped body or a layer of this type from a precursor of a metal oxide or mixed oxide selected from among magnesium, strontium, barium, aluminum, gallium, indium, silicon, tin, lead and the transition metals. | 2013-07-04 |
20130168598 | METHOD FOR MAKING CARBON NANOTUBE COMPOSITE FILMS - A method for making a carbon nanotube composite film is provided. A PVDF is dissolved into a first solvent to form a PVDF solution. A number of magnetic particles is dispersed into the PVDF solution to form a suspension. A carbon nanotube film is immersed into the suspension and then transferred into a second solvent. The carbon nanotube film structure is transferred from the second solvent and dried to form the carbon nanotube composite film. | 2013-07-04 |
20130168599 | PRECURSOR, PROCESS FOR PRODUCTION OF PRECURSOR, PROCESS FOR PRODUCTION OF ACTIVE MATERIAL, AND LITHIUM ION SECONDARY BATTERY - Active material is obtained by sintering a precursor, has a layered structure and is represented by the following formula (1). The temperature at which the precursor becomes a layered structure compound in its sintering in atmospheric air is 450° C. or less. Alternatively, the endothermic peak temperature of the precursor when its temperature is increased from 300° C. to 800° C. in its differential thermal analysis in the atmospheric air is 550° C. or less. | 2013-07-04 |
20130168600 | Mixed Metal Oxidized Hydroxide and Method for Production - Disclosed are mixed metal oxidized hydroxide precursors that can be used for the preparation of lithium mixed metal oxide cathode materials for secondary lithium ion batteries and methods of making such mixed metal precursors. The precursors typically are particles of nickel, cobalt, and manganese mixed metal oxidized hydroxides with varying metal molar ratios prepared in co-precipitation reactions in two sequential reactors. | 2013-07-04 |
20130168601 | POSITIVE ELECTRODE ACTIVE MATERIAL FOR SECONDARY BATTERY, AND SECONDARY BATTERY USING THE SAME - There is provided a novel positive electrode active material for a secondary battery. A positive electrode active material for a secondary battery according to the present exemplary embodiment is represented by the following formula (I): | 2013-07-04 |
20130168602 | Pre-soaking process for biomass conversion - An improved method of conducting the pre-soaking step involving pre-soaking the ligno-cellulosic biomass in a liquid (water) at a temperature in the range of between 100° C. to 150° C. prior to soaking at higher temperatures. This material can then be soaked and soaked liquid filtered by nano-filtration. When nano-filtration is used, the pre-soak temperature can be in the range of 10° C. to 150° C. | 2013-07-04 |
20130168603 | MOLDABLE DESICCANT AND HYDROGEN GETTERING SYSTEM - A composite useful for both gas gettering and moisture adsorption comprising an organic getter component and a desiccant component homogeneously dispersed in an elastomeric matrix. The getter component comprises an organic material capable of reacting with hydrogen and a hydrogenation catalyst. The desiccant component is a molecular sieve. The composite is a resilient, self-sustaining body that can also function as a shock absorber. A method of forming composites useful for both gas gettering and moisture adsorption is also disclosed, along with a kit to facilitate the same. | 2013-07-04 |
20130168604 | GREEN LIGHT-EMITTING SILICATE PHOSPHOR - A green light-emitting silicate phosphor comprising Eu-activated strontium barium silicate which has a crystal phase of magnesium oxide or a merwinite crystal phase and contains 0.15 to 0.90 mol of magnesium per one mol of silicon gives a light emission stable at elevated temperatures. | 2013-07-04 |
20130168605 | NITRIDE PHOSPHORS WITH INTERSTITIAL CATIONS FOR CHARGE BALANCE - Phosphors comprising a nitride-based composition represented by the chemical formula: M | 2013-07-04 |
20130168606 | PHOSPHOR AND LIGHT-EMITTING EQUIPMENT USING PHOSPHOR - Phosphors include a CaAlSiN | 2013-07-04 |
20130168607 | Artificial Marble Having Natural Textures and Luminescent Patterns and Method of Preparing the Same - An artificial marble includes unsaturated polyester resin (A), compound including silica (B), and luminescent pigment (C). An artificial marble according to a second embodiment includes about 70 to about 95% by weight of a non-luminescent base material (I) comprising unsaturated polyester resin (A), compound including silica (B), and organic/inorganic pigment (C) and about 5 to about 30% by weight of a luminescent amorphous pattern part (II) comprising unsaturated polyester resin (A), compound including silica (B), and luminescent pigment (D). An artificial marble according to a third embodiment includes unsaturated polyester resin (A), compound including silica (B), and amorphous luminescent chip (C). | 2013-07-04 |
20130168608 | METHOD FOR THE GENERATION OF SYNTHESIS GAS - With a method for the generation of synthesis gas by means of gasification of solid or liquid carbonaceous fuels with an oxidation agent containing oxygen, in a reactor, wherein the synthesis gas is passed out of the reactor overhead, and the mineral ash/slag droplets that occur during the reaction are passed out of the reactor downward, in the direction of gravity, it is supposed to be made possible to use a flue-tube boiler, which is clearly less expensive, for heat removal in place of radiant boilers. This is achieved in that the synthesis gas is passed over a hot-gas filter ( | 2013-07-04 |
20130168609 | ANALYTE SENSOR - Matrix materials, such as sol-gels and polymers derivatives to contain a redox active material can be used to form electrodes and probes suitable for use in pH meters and other analyte sensing devices. | 2013-07-04 |
20130168610 | CARBON MATERIAL FOR BATTERY ELECTRODE AND PRODUCTION METHOD AND USE THEREOF - The invention relates to a carbon material for forming a battery electrode, comprising carbon powder having a homogeneous structure which is produced by causing an organic compound, serving as a raw material of a polymer, to deposit onto and/or permeate into carbonaceous particles, and subsequently polymerizing the organic compound, followed by thermal treatment at a temperature of 1,800 to 3,300° C., which comprises a structure which is substantially uniform throughout the entirety of the particle from the surface to the central core where a graphite crystal structure region and an amorphous structure region are distributed. By using the material, a battery having high discharging capacity and low irreversible capacity, with excellent coulombic efficiency and excellent cycle characteristics can be fabricated. | 2013-07-04 |
20130168611 | COMPOSITE ELECTRODE MATERIAL, MANUFACTURING METHOD AND APPLICATION THEREOF - The invention relates to a composite electrode material, a manufacturing method and application thereof. The composite electrode material comprises manganese oxide, graphene and graphite oxide. The manufacturing method includes the following steps, first step: adequately milling graphene then ultrasonic dispersing it into water; second step: dissolving hypermanganate into the water containing graphene and obtaining the aqueous solution containing permanganate ion and graphene; third step: adding polyethylene glycol into the aqueous solution of second step under stirring and obtaining mixed solution; fourth step: stirring the mixed solution until fuchsia completely faded, then filtering, washing and drying precipitate and obtaining the composite electrode material. The composite electrode material has the following advantages: high specific surface area, high conductivity and high specific capacity, and can be applied to supercapacitor electrode material. | 2013-07-04 |
20130168612 | Oxide Coated Metal Pigments and Film-Forming Compositions - This invention relates to sacrificial-metal pigments coated with an effective amount of at least one metal oxide or a combination of metal oxides such as a chromium-zirconium oxide, and the process for preparing said coated pigments and combination thereof with film-forming binders for coating metal substrates to inhibit corrosion. The coated sacrificial-metal pigments are electrically active to prevent corrosion of metal substrates that are more cathodic (electropositive) than the metal oxide coated metal pigments. | 2013-07-04 |
20130168613 | HIGH IMPACT STRENGTH CONDUCTIVE ADHESIVES - The high impact strength conductive adhesive is a mixture formed from a bisphenol A-based epoxy resin, a curing agent, and silver flakes. In one embodiment, the bisphenol A-based epoxy resin forms about 10.5 wt % of the mixture and the curing agent forms about 14.5 wt % of the mixture, the balance being silver flakes. In this embodiment, the curing agent is preferably an oligomeric polyamine curing agent, such as amidoamine-polyoxypropylenediamine t-butyl phenol. Each silver flake preferably has a tap density of between about 4.0 g/cm | 2013-07-04 |
20130168614 | NICKEL ALLYL AMIDINATE PRECURSORS FOR DEPOSITION OF NICKEL-CONTAINING FILMS - Disclosed are nickel allyl amidinate precursors having the formula: | 2013-07-04 |
20130168615 | METAL COMPLEX AND DEVICE USING THE METAL COMPLEX - Disclosed is an device having high light-emitting efficiency. A metal complex represented by the following formula (1). | 2013-07-04 |
20130168616 | ROOFING GRANULES - A roofing product can include roofing granules, wherein the roofing granules include base particles and a coating covering the base particles. The base particles are sintered. The coating has a depth of penetration into an outside surface of at least about 0.5% of an average radius of the base particles. In an embodiment, the coating has a depth of penetration into an outside surface of at least about 2.5 microns into the base particles. Further included is a process of forming the roofing granules. | 2013-07-04 |
20130168617 | IONIC SILICONE HYDROGELS - The present invention relates to a process comprising the steps of reacting a reactive mixture comprising at least one silicone-containing component, at least one hydrophilic component, and at least one diluent to form an ophthalmic device having an advancing contact angle of less than about 80°; and contacting the ophthalmic device with an aqueous extraction solution at an elevated extraction temperature, wherein said at least one diluent has a boiling point at least about 10° higher than said extraction temperature. | 2013-07-04 |
20130168618 | Flame Retardant Thermoplastic Resin Composition - A flame retardant thermoplastic resin composition includes about 100 parts by weight of a base resin including an aromatic vinyl resin and a polyphenylene oxide resin; and about 0.1 to about 30 parts by weight of a polyphosphonate copolymer represented by Formula 1: | 2013-07-04 |
20130168619 | Thermoplastic Resin Composition Having Excellent Flame Retardancy, Colorability and Thermal Stability - A thermoplastic resin composition comprises (A) about 45 to about 95% by weight of an aromatic copolymer, (B) about 5 to about 55% by weight of a polycarbonate resin, (C) about 1 to about 30 parts by weight of a halogen-containing compound based on about 100 parts by weight of the aromatic copolymer (A) and the polycarbonate resin (B), and (D) about 0 to about 2 parts by weight of an antimony compound based on about 100 parts by weight of the aromatic copolymer (A) and the polycarbonate resin (B). The thermoplastic resin composition can have excellent flame retardancy, colorability and thermal stability. | 2013-07-04 |
20130168620 | Chemiluminescent system - An aqueous-based chemiluminescent system is provided. The system comprises an oxalate component comprising an oxalate ester and a solvent; an activator component comprising a peroxide, a catalyst, and water; a surfactant; and a fluorescer. A self-illuminating bubble-forming composition is also provided, comprising the oxalate component, the activator component, the surfactant, and the fluorescer in admixture with an aqueous bubble-forming solution. | 2013-07-04 |
20130168621 | STAPLE REMOVAL EQUIPMENT - Staple removal equipment is provided. The staple removal equipment has a detecting unit which detects a position of a staple stapling a paper bundle, a striking portion which strikes the staple, and a removing unit which removes the staple from the paper bundle. | 2013-07-04 |
20130168622 | LIFT CONTROL SYSTEMS FOR LIFTING DEVICES AND LIFTING DEVICES COMPRISING THE SAME - A control system for a lifting device and a lifting device comprising the same are disclosed. The control system includes a control unit comprising a processor with a memory communicatively coupled to the processor and having computer readable and executable instructions. A battery is electrically coupled to the control unit in addition to at least one indicator. The processor executes the computer readable and executable instructions to: determine an operating characteristic of the lifting device and an operating time of the lifting device as the lifting device is actuated; determine an accumulated load-time parameter for the lifting device based on the operating characteristic and the operating time; store the accumulated load-time parameter in the memory of the lift control system; compare the accumulated load-time parameter to a service constant; and provide an indication the indicator that a lift structural component requires service based on the comparison. | 2013-07-04 |
20130168623 | DEVICE COMPRISING A CYLINDER, SUCH AS A SPREADER - The present invention relates to a device such as a spreader. This device comprises a cylinder housing, a plunger hydraulically displaceable in the cylinder housing and having thereon a piston rod extending outside the cylinder housing in order to form a cylinder with the cylinder housing, an extension forming a mechanically extendable unit with at least one of the cylinder and the piston rod, and a locking which acts in selectively actuable manner on the unit for mechanically setting a loadable presetting of a length of the device desired for use of the cylinder. | 2013-07-04 |
20130168624 | HEIGHT ADJUSTING DEVICE FOR VEHICLE SUSPENSION SEAT - A height adjusting device for a vehicle suspension seat includes: a control valve having an air injection pin and an air discharge pin formed therein; a first push support having one end rotatably coupled to the control valve and pressurizing the air injection pin when rotated in one direction; a second push support having one end rotatably coupled to the control vale, pressurizing the air discharge pin when rotated in one direction, and disposed to correspond to the first push support; a first push rod pressurizing the other end of the first push support so as to rotate the first push support; and a second push rod pressurizing the other end of the second push support so as to rotate the second push support, and disposed to correspond to the first push rod. | 2013-07-04 |
20130168625 | Partition Assembly - A screening for separating a protected area has a plurality of vertical supports with removable panels between the supports. Upper attachment members on the supports have a vertical channel for slideably receiving a complementary attachment member on the panel. A hook on one attachment member engages a catch on the other to retain the attachment members together. The lower end of the panel is retained between parallel flanges on the vertical supports. A tool is provided to release the hook for removal of the panel from the vertical supports. | 2013-07-04 |
20130168626 | Safety Barrier Netting System - A system for substantially enclosing the periphery of a building top with a netting system which is easily and efficiently movable or reconfigurable during the building construction process comprises a lightweight netting system for extending above a completed work area or floor, a strong lightweight structural support system for the netting, wherein the structural support system is vertically adjustable via slidable engagement with brackets attached to the floors which are already completed, provides enhanced safety for workers and for pedestrians below by preventing passage of workers or debris through the netting and enhances efficiency of construction by providing an easily reconfigurable, inexpensive and lightweight system for providing such enhanced safety. | 2013-07-04 |
20130168627 | Mounting Accessory for Secure Attachment of Rails to Pipe-Mounted Hollow Posts - A mounting accessory is used for secure connection of a rail or other component to a hollow post positioned over an internal upright by a mounting device having an axial passage through which the upright extends. The accessory features interconnected walls facing into an open space left therebetween, the open space being sized to accommodate passage of the upright support therethrough with the mounting accessory oriented to situate the walls on different sides of the upright support. Each wall has an opening therein sized to accommodate a respective portion of the periphery of the mounting device. With a portion of the mounting device periphery received in the opening of each wall, the wall resides at or adjacent the periphery of the device to lie internally adjacent a respective wall of the post to provide extra material for engagement by a screw fastener driven through the post wall. | 2013-07-04 |
20130168628 | VARIABLE RESISTANCE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A variable resistance memory device includes a first trench extending in a first direction formed in a first insulation layer, a first conductive layer in the first trench, a protective layer over the first conductive layer in the first trench, a second insulation layer over the first insulation layer and the protective layer, a second trench formed in the second insulation layer and extending in a second direction that crosses the first direction, a gap formed in the protective layer exposing the first conductive layer at an intersection between the first trench and the second trench, a variable resistance layer positioned in the gap and coupled to the first conductive layer, and a second conductive layer formed in the second trench and coupled to the variable resistance layer. | 2013-07-04 |
20130168629 | NANOSCALE SWITCHING DEVICE - A nanoscale switching device comprises a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region containing a switching material; an area within the active region that constrains current flow between the first electrode and the second electrode to a central portion of the active region; and an interlayer dielectric layer formed of a dielectric material and disposed between the first and second electrodes outside the active region. A nanoscale crossbar array and method of forming the nanoscale switching device are also disclosed. | 2013-07-04 |
20130168630 | Memory Structures and Arrays, and Methods of Forming Memory Structures and Arrays - Some embodiments include memory structures having a diode over a memory cell. The memory cell can include programmable material between a pair of electrodes, with the programmable material containing a multivalent metal oxide directly against a high-k dielectric. The diode can include a first diode electrode directly over one of the memory cell electrodes and electrically coupled with the memory cell electrode, and can include a second diode electrode laterally outward of the first diode electrode and not directly over the memory cell. Some embodiments include memory arrays comprising the memory structures, and some embodiments include methods of making the memory structures. | 2013-07-04 |
20130168631 | NON-VOLATILE MEMORY STRUCTURE AND METHOD FOR FABRICATING THE SAME - The disclosure provides a non-volatile memory structure and a method for fabricating the same. The non-volatile memory structure includes a first contact connected to a first transistor. A second contact is connected to a second transistor. A resistance-changing memory material pattern covers and contacts the second contact but not the first contact. A top electrode contacts both the resistance-changing memory material pattern and the first contact. An area of the resistance-changing memory material pattern is substantially larger than an area of its interface with the second contact. | 2013-07-04 |
20130168632 | RESISTANCE VARIABLE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A resistance variable memory device includes: a first electrode; a second electrode; a resistance variable layer interposed between the first electrode and the second electrode; and nano particles that are disposed in the resistance variable layer and have a lower dielectric constant than the resistance variable layer. | 2013-07-04 |
20130168633 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A device that may be used for a phase change random access memory in a semiconductor device and a manufacturing method thereof are provided. The device includes a phase change unit and two sidewall electrodes respectively located on two opposite sidewalls of the phase change unit. The phase change unit includes a three layer structure, in which a phase change material layer is positioned between a top insulating material layer and a bottom insulating material layer. The first sidewall electrode and the second sidewall electrode are in contact with two opposite end faces of the phase change material layer. The contact area between electrode and phase change material is reduced, thereby obtaining a relatively small drive current and meeting a demand that the integrated level of such a device is increasingly enhanced. | 2013-07-04 |
20130168634 | RESISTIVE RANDOM ACCESS MEMORY DEVICE - A resistive memory device includes a lower electrode disposed on a substrate, first and second resistance layers respectively disposed on opposite sides of the lower electrode and exhibiting resistance variation at different voltages, respectively, and an upper electrode disposed on and the first and second resistance layers. | 2013-07-04 |
20130168635 | MATERIALS AND CONFIGURATIONS OF A FIELD EMISSION DEVICE - A field emission device is configured as a heat engine. Different embodiments of the heat engine may have different configurations that may include a cathode, gate, suppressor, and anode arranged in different ways according to a particular embodiment. Different embodiments of the heat engine may also incorporate different materials in and/or proximate to the cathode, gate, suppressor, and anode. | 2013-07-04 |
20130168636 | SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting diode is provided. The semiconductor light emitting diode comprises a metal electrode; an n-type cladding over the metal electrode, the n-type cladding comprising a pillar support part formed of an n-type semiconductor material, and a pillar part having a plurality of pillars formed of an n-type semiconductor material over the pillar support part; an active part conformally formed over the pillar part so as to enclose the pillar part and over the pillar support part between the pillar parts, the active part having a quantum well layer and a barrier layer stacked alternately; a p-type cladding conformally formed of a p-type semiconductor material over the active part; and a transparent electrode formed over the p-type cladding. | 2013-07-04 |
20130168637 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE - A semiconductor light emitting element includes an n-type semiconductor layer containing n-type impurities, a light emitting layer stacked on the n-type semiconductor layer, and a p-type semiconductor layer stacked on the light emitting layer and containing p-type impurities. The light emitting layer includes three or more well layers, and four or more barrier layers composed of a group-III nitride semiconductor having a larger band gap than that of the well layers, and each of the three or more well layers is sandwiched from both sides by neighboring two of the barrier layers. The three or more well layers include plural n-side well layers each having a first thickness to emit light of a common wavelength, and one or plural p-side well layers each having a second thickness larger than the first thickness and having a different composition from the n-side well layers to emit light of the common wavelength. | 2013-07-04 |
20130168638 | NITRIDE-BASED LIGHT EMITTING DEVICE WITH EXCELLENT LIGHT EMITTING EFFICIENCY USING STRAIN BUFFER LAYER - The nitride-based light emitting device according to one embodiment includes a first nitride semiconductor layer doped with a first conductive impurity; a strain buffer layer formed on the first nitride semiconductor layer and comprised of InGaN; an active layer formed on the strain buffer layer and having a multi-quantum well structure in which a quantum-well layer and a quantum-barrier layer are alternately stacked one above another; and a second nitride semiconductor layer formed on the active layer and doped with a second conductive impurity opposite to the first conductive impurity, wherein the ratio B/A satisfies 1.4 | 2013-07-04 |
20130168639 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light emitting device includes first and second type nitride semiconductor layers. An active layer is disposed between the first and second type nitride semiconductor layers. A current spreading layer is disposed between the second type nitride semiconductor layer and the active layer. The current spreading layer includes first nitride thin films and second nitride thin films which are alternately laminated. The first nitride thin films have band gaps larger than those of the second nitride thin films. A first plurality of first nitride thin films are positioned at outer first and second sides of the current spreading layer. The first plurality of first nitride thin films have a thickness greater than that of a second plurality of first nitride thin films positioned between the first plurality of first nitride thin films. | 2013-07-04 |
20130168640 | INVERTER DEVICE, NAND DEVICE, NOR DEVICE, AND LOGIC DEVICE INCLUDING THE SAME - An inverter device including a tunable diode device and a diode device that includes a control terminal connected to an input terminal of the inverter device, an anode terminal connected to a high-level voltage terminal, and a cathode terminal connected to an output terminal of the inverter device, wherein the diode device is configured to turn on or off according to a voltage applied to the control terminal. | 2013-07-04 |
20130168641 | NANO METAL PARTICLES BASED TUNNELING FIELD EFFECT TRANSISTOR AND NANO-SWITCH - A new devices structure of nano tunneling field effect transistor based on nano metal particles is introduced. The nano semiconductor device, comprising a source and a drain, wherein each of the source and drain comprise an implanted nano cluster of metal atoms, wherein the implanted nano cluster of metal atoms forming the source has an average radius in the range from about 1 to about 2 nanometers, and the implanted nano cluster of metal atoms forming the drain has an average radius in the range from about 2 to about 4 nanometers. Processes for producing the nano semiconductor device are detailed. | 2013-07-04 |
20130168642 | BITHIOPHENE DERIVATIVES AND SEMICONDUCTOR DEVICES COMPRISING THE SAME - In an embodiment of the disclosure, a bithiophene derivative is provided. The bithiophene derivative has formula (I): | 2013-07-04 |
20130168643 | LIGHT DETECTING ARRAY STRUCTURE AND LIGHT DETECTING MODULE - A light detecting array structure and a light detecting module are provided. The light detecting array structure includes a plurality of first electrodes, a plurality of second electrodes, a first carrier selective layer, a second carrier selective layer, and a light-absorbing active layer. The second electrodes are disposed on one side of the first electrodes. Between the first electrodes and the second electrodes, a first carrier selective layer, a light-absorbing active layer and a second carrier selective layer are disposed. The light detecting module includes the light detecting array structure and a control unit. The control unit is coupled to the first electrodes and second electrodes, selectively provides at least two cross voltages between each of the first electrodes and each of the second electrodes, and reads photocurrents flowing through the first electrodes and second electrodes. | 2013-07-04 |
20130168644 | Organic Light-Emitting Display Apparatus and Method of Manufacturing the Same - An organic light-emitting display apparatus includes a substrate, a pixel electrode disposed on the substrate, an opposing electrode disposed on the pixel electrode and transmitting light therethrough, an organic light-emitting layer disposed between the pixel electrode and the opposing electrode and emitting light toward at least the opposing electrode, a first transmission layer disposed on the opposing electrode and transmitting the light emitted from the organic light-emitting layer therethrough, and a second transmission layer disposed on a path of the light emitted from the organic light-emitting layer on the first transmission layer, and comprising a plurality of first materials having first refractive indices and a second material having a second refractive index. The first refractive indices are greater than the second refractive index, and the plurality of first materials are disposed inside the second material. | 2013-07-04 |
20130168645 | GREEN ORGANIC LIGHT-EMITTING DIODE, AND FLAT PANEL DISPLAY DEVICE INCLUDING THE SAME - An organic light-emitting diode includes: a first electrode, a second electrode facing the first electrode, an emission layer between the first and second electrodes and including a first compound and a second compound, and a first organic layer between the emission layer and the first electrode and including a third compound, wherein the first compound is represented by Formula 1 below, the second compound is represented by Formula 2 below, and the third compound is represented by Formula 3a or 3b below. | 2013-07-04 |
20130168646 | NOVEL COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - Compounds represented by Formula 1 and organic light-emitting devices including an organic layer including the compounds are disclosed. | 2013-07-04 |
20130168647 | Organic Lighting Device and Lighting Equipment - An organic luminous means and an illumination device comprising such a luminous means are specified. An optical display apparatus, emergency lighting, motor vehicle interior lighting, an item of furniture, a construction material, a glazing and a display comprising such a luminous means and, respectively, comprising an illumination device having such a luminous means are furthermore specified. | 2013-07-04 |
20130168648 | Organic Light Emitting Display Device and Manufacturing Method Thereof - An organic light emitting display device wherein organic and inorganic films are alternately stacked, and the inorganic film is patterned to form an outgassing route, through which gas is released from the organic film, and a manufacturing method thereof is herein. | 2013-07-04 |
20130168649 | ORGANIC LIGHT-EMITTING DISPLAY PANEL AND DISPLAY APPARATUS HAVING THE SAME - A display apparatus having an organic light emitting display panel is provided. The organic light emitting display panel includes a front substrate and a rear substrate which are arranged parallel to each other, an image forming portion which is formed on a rear surface of the front substrate and which includes at least one organic layer, a sealing member which surrounds the image forming portion between the front substrate and the rear substrate to seal the image forming portion, and an input key flexible printed circuit board (FPCB) which includes user input keys. The input key FPCB is mounted on the front substrate or the rear substrate. | 2013-07-04 |
20130168650 | Electroluminescent Element and Light-Emitting Device - An electroluminescent element which can easily control the balance of color in white emission (white balance) is provided according to the present invention. The electroluminescent element comprises a first light-emitting layer containing one kind or two or more kinds of light-emitting materials, and a second light-emitting layer containing two kinds of light-emitting materials (a host material and a phosphorescent material) in which the phosphorescent material is doped at a concentration of from 10 to 40 wt %, preferably, from 12.5 to 20 wt %. Consequently, blue emission can be obtained from the first light-emitting layer and green and red (or orange) emission can be obtained from the second light-emitting layer. An electroluminescent element having such device configuration can easily control white balance since emission peak intensity changes at the same rate in case of increasing a current density. | 2013-07-04 |
20130168651 | SUBSTRATE FOR AN ORGANIC LIGHT-EMITTING DEVICE, USE AND PROCESS FOR MANUFACTURING THIS SUBSTRATE, AND ORGANIC LIGHT-EMITTING DEVICE - The invention relates to a substrate for an organic light-emitting device especially a transparent glass substrate, which includes, on a first main face a bottom electrode film the electrode film being formed from a thin-film multilayer coating comprising, in succession, at least a contact layer based on a metal oxide and/or a metal nitride; a metallic functional layer having an intrinsic electrical conductivity property; an overlayer based on the metal oxide and/or a metal nitride, especially for matching the work function of said electrode film, said substrate including a base layer, the base layer covering the main face. | 2013-07-04 |
20130168652 | Organic Light Emitting Device and Method for Manufacturing the Same - An organic light emitting device, efficacy and lifetime of which are improved by forming a blue light emitting layer disposed over respective pixels in common as a double layer structure, includes a substrate divided into and defined by first to third pixels, a first electrode disposed on the TFT substrate and a second electrode facing the first electrode, the second electrode being spaced from the first electrode, a first light emitting layer and a second light emitting layer disposed in the first pixel and in the second pixel, respectively, between the first electrode and the second electrode, a sub-light emitting layer and a third light emitting layer disposed over the first to third pixels in this order on the first light emitting layer and the second light emitting layer. | 2013-07-04 |
20130168653 | ORGANIC LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting device includes a substrate divided into and defined by first to third pixels, a first electrode disposed on the substrate and a second electrode facing the first electrode, a first light emitting layer and a second light emitting layer disposed in the first pixel and in the second pixel, respectively, between the first electrode and the second electrode, a first triplet exciton confinement layer, a third light emitting layer and a second triplet exciton confinement layer disposed over the first to third pixels in this order, on the first light emitting layer and the second light emitting layer, and a first common layer disposed between the first light emitting layer and the second light emitting layer, and the first electrode, and a second common layer disposed between the second triplet exciton confinement layer and the second electrode. | 2013-07-04 |
20130168654 | LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE AND ELECTRONIC APPARATUS - The light emitting element of the embodiment includes an anode; a cathode; a visible light emitting layer provided between the anode and the cathode and emitting visible light; and a carrier trapping layer containing a thiadiazole based compound represented by the following formula (1). | 2013-07-04 |
20130168655 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND DRIVING METHOD OF THE SAME - An organic light emitting display device comprises: a lower substrate; a underlying wire formed on the lower substrate; and red, green, and blue subpixels each comprising a transistor section formed on the lower substrate and an organic light emitting diode, wherein the white subpixel comprises a first electrode which is non-overlapped with the underlying wire and is spaced apart from the underlying wire. | 2013-07-04 |
20130168656 | CYCLOMETALLATED TETRADENTATE PLATINUM COMPLEXES - Novel phosphorescent platinum complexes containing tetradentate ligands are provided. The disclosed compounds have three 6-membered metallocycle units in each tertadentate ligand. The disclosed compounds have desirable electronic properties that make them useful when incorporated into a variety of OLED devices. | 2013-07-04 |
20130168657 | THIN FILM TRANSISTOR ON FIBER AND METHOD OF MANUFACTURING THE SAME - A thin film transistor formed on a fiber and method of manufacturing the same. The thin film transistor includes a fiber; a first electrode that is disposed on the fiber; a second electrode that is disposed on the fiber and space apart from the first electrode; a gate electrode that is disposed on the fiber; a channel that is disposed between the first electrode and the second electrode; and a gate insulating layer that is disposed on the first electrode, the second electrode, the gate electrode and the channel; and an encapsulant that encapsulates the gate insulating layer. | 2013-07-04 |
20130168658 | Diode for a Printable Composition - An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary diode comprises: a light emitting or absorbing region having a diameter between about 20 and 30 microns and a height between 2.5 to 7 microns; a plurality of first terminals spaced apart and coupled to the light emitting region peripherally on a first side, each first terminal of the plurality of first terminals having a height between about 0.5 to 2 microns; and one second terminal coupled centrally to a mesa region of the light emitting region on the first side, the second terminal having a height between 1 to 8 microns. | 2013-07-04 |
20130168659 | Semiconducting Compounds and Related Compositions and Devices - Disclosed are new semiconductor materials prepared from thienocoronene-based compounds and related heteroaromatic analogs. Such compounds can exhibit high carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions. | 2013-07-04 |
20130168660 | ORGANOSELENIUM MATERIALS AND THEIR USES IN ORGANIC LIGHT EMITTING DEVICES - The present invention provides organoselenium compounds comprising dibenzoselenophene, benzo[b]selenophene or benzo[c]selenophene and their uses in organic light emitting devices. | 2013-07-04 |
20130168661 | Electro-Optic Device and Method for Manufacturing Same - According to the present invention, an electro-optic device comprises: a substrate which is split into a light emitting unit and a non-light emitting unit, wherein said light emitting unit is divided into a plurality of driving regions; an electrode pad which is formed in the non-light emitting unit of the substrate; and an electrode unit which comprises a plurality of supplementary electrodes each of which has one end connected to the electrode pad and has the other end connected to the centers of each of the plurality of driving regions, and transparent electrodes formed on the upper sides of the plurality of supplementary electrodes in the light emitting unit, wherein the area of each of the plurality of driving regions is set to an area in which no voltage drop occurs, and the plurality of supplementary electrodes are manufactured in the same length. Thus, according to the present invention, if power is supplied to each one end of the plurality of supplementary electrodes by using the electrode pad, the power is transmitted, at the same time, to the other ends of each of the plurality of supplementary electrodes. Therefore, the power is simultaneously supplied to each center of the plurality of driving regions regardless of the distance between the electrode pad and the driving regions. Further, as mentioned above, a voltage drop phenomenon is prevented since the light emitting unit is divided into the plurality of driving regions in which no voltage drop occurs. That is to say, uniform currents can flow on the front side of each driving region irrespective of the distance between the supplementary electrodes and the driving regions. Consequently, a large-scaled organic light emitting device which can show uniform brightness properties in the overall light emitting unit can be manufactured. | 2013-07-04 |
20130168662 | Method of Forming a Semiconductor Device - Method for producing a semiconductor device such as an organic thin film transistor, and a device produced by the method, the method including the steps of forming conducting electrodes over a substrate, treating a surface of the electrodes with an arene substituted with an electron-withdrawing group to form an electrode contact layer over the electrodes, and forming an organic semiconductor layer over the substrate and electrodes, in which the substrate and electrodes are baked before the organic semiconductor layer is formed so as to reduce contaminants on the electrode contact layer and thereby promote improved crystal nucleation on a surface of the electrode. | 2013-07-04 |
20130168663 | ORGANIC ELECTROLUMINESCENT DEVICE - The present invention relates to phosphorescent organic electroluminescent devices which comprise at least one phosphorescent emitter and a matrix material in the emitting layer, where certain conditions must be satisfied for the positions of the triplet energy and the HOMO and LUMO. | 2013-07-04 |
20130168664 | PRINTING METHOD FOR USE IN FABRICATION OF AN ELECTRONIC UNIT - A printing method for use in fabrication of an electronic unit comprising one or more lines of a regularly repeating structural feature formed over a substrate, the structural feature repeating over a regular interval along each line. The method comprises: using a first print-head arrangement to print portions of a composition at a first pitch along each of the lines; and using a second print-head arrangement to print portions of the composition at a second pitch along each of the lines; such that the first and second pitches together produce a beating pattern along each of the lines, having a beating wavelength matched to the interval of the regularly repeating structural feature. | 2013-07-04 |
20130168665 | ORGANIC ELECTROLUMINESCENT DEVICE AND MANUFACTURING METHOD THEREOF - An organic electroluminescent device and a method of manufacture thereof are provided. The device comprises a conductive substrate, a hole-injecting layer, a light-emitting layer, and a cathode layer, which are stacked in order. The material of the hole-injecting layer is made of an acid-doped polyaniline. The polyaniline has good conductivity and high stability, and the polyaniline is suitable as the material of hole-injecting layer. The acid-doped polyaniline can significantly improve the solubility and conductivity. As a result of the acid-doped polyaniline as the hole-injecting layer, the light-emitting performance of the organic electroluminescent device is basically same as a traditional OLED, and the cost is lowered. | 2013-07-04 |
20130168666 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A semiconductor device is provided. A first semiconductor layer is disposed on a substrate and has a channel region and two doped regions beside the channel region. A first dielectric layer is disposed on the substrate and covers the first semiconductor layer. A gate is disposed on the first dielectric layer and corresponds to the channel region of the first semiconductor layer. A second dielectric layer is disposed on the first dielectric layer and covers the gate. A second semiconductor layer is disposed on the second dielectric layer and corresponds to the gate. The boundary of the second semiconductor layer does not exceed that of the gate. At least one first conductive plug penetrates through the first and second dielectric layers and contacts one doped region of the first semiconductor layer. At least one contact contacts the second semiconductor layer. A method of forming a semiconductor device is also provided. | 2013-07-04 |
20130168667 | THIN FILM TRANSISTOR - A thin film transistor includes a substrate, a gate electrode formed on the substrate, a gate insulating layer formed on the gate electrode, a channel region formed on the gate insulating layer, a source region and a drain region formed at two opposite ends of the channel region, a first etching block layer made of silicon oxide and a second etching block layer made of silicon nitride which are formed in sequence on the channel region. The second etching block layer defines a groove in a center thereof to expose a part of the first etching block layer. The groove divides the second etching block layer into a first region and a second region. A source electrode extends from the source region to the first region. A drain electrode extends from the drain region to the second region. | 2013-07-04 |
20130168668 | THIN FILM TRANSISTOR ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND ANNEALING OVEN FOR PERFORMING THE SAME METHOD - A thin film transistor (TFT) array substrate includes a substrate, a gate electrode layer disposed on the substrate, an insulating layer, an oxide semiconductor layer disposed on the insulating layer, a source/drain electrode layer, an organic-acrylic photoresist layer, a passivation layer and an electrically conductive layer. The insulating layer is disposed on the gate electrode layer and the substrate. The source/drain electrode layer is disposed on the insulating layer and the oxide semiconductor layer, and a gap is formed through the source/drain electrode layer for exposing the oxide semiconductor layer therethrough. The organic-acrylic photoresist layer covers the source/drain electrode layer. The passivation layer is disposed on the substrate, the oxide semiconductor layer and the organic-acrylic photoresist layer. The electrically conductive layer is disposed on the passivation layer or the organic-acrylic photoresist layer and connected to the source/drain electrode layer or the gate electrode layer. | 2013-07-04 |
20130168669 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An oxide or nitride semiconductor layer is formed over a substrate. A first conductive layer including a first element and a second element, and a second conductive layer including the second element are formed over the semiconductor layer. The first element is oxidized or nitrogenized near an interface region between the first conductive layer and the oxide or nitride semiconductor layer by heat treatment or laser irradiation. The Gibbs free energy of oxide formation of the first element is lower than those of the second element or any element in the oxide or nitride semiconductor layer. | 2013-07-04 |
20130168670 | SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - A semiconductor device including a first gate electrode and a second gate electrode formed apart from each other over an insulating surface, an oxide semiconductor film including a region overlapping with the first gate electrode with a gate insulating film interposed therebetween, a region overlapping with the second gate electrode with the gate insulating film interposed therebetween, and a region overlapping with neither the first gate electrode nor the second gate electrode, and an insulating film covering the gate insulating film, the first gate electrode, the second gate electrode, and the oxide semiconductor film, and being in direct contact with the oxide semiconductor film is provided. | 2013-07-04 |
20130168671 | SEMICONDUCTOR DEVICE - An ohmic contact between an electrode and a semiconductor layer is more stably formed and an electrical contact resistance between them is further reduced. | 2013-07-04 |
20130168672 | Multichip Module with Reroutable Inter-Die Communication - A multichip module (MCM) has redundant I/O connections between its dice. That is, the number of inter-die I/O connections used is larger than the number of connections ordinarily used to provide connectivity between the dice. Defective connections are discovered through testing after MCM assembly and avoided, with signals being rerouted through good (e.g., not defective) redundant connections. The testing can be done at assembly time and the results stored in nonvolatile memory. Alternatively, the MCM can perform the testing itself dynamically, e.g., at power up, and use the test results to configure the inter-die I/O connections. | 2013-07-04 |
20130168673 | Intra Die Variation Monitor Using Through-Silicon Via - An apparatus comprising connecting IDVMON monitors with through silicon vias (TSV) to allow the monitors to be connected to probe pads located on the backside of the wafer. Because the backside of the wafer have significantly more space than the front side, the probe pads for IDVMON can be accommodated without sacrificing the silicon area. | 2013-07-04 |
20130168674 | Methods and Systems for Repairing Interior Device Layers in Three-Dimensional Integrated Circuits - A three-dimensional integrated circuit (3D-IC) includes a stack of semiconductor wafers, each of which includes a substrate and a device layer. Programmable components, such as memory arrays or logic circuits, are formed within the device layers. Some of the programmable components are redundant, and can be substituted for defective components by programming passive memory elements in a separate conductive layer provided for this purpose. The separate conductive layer is devoid of active devices, and is therefore relatively reliable and inexpensive. | 2013-07-04 |
20130168675 | Detection and Mitigation of Particle Contaminants in MEMS Devices - Detecting and/or mitigating the presence of particle contaminants in a MEMS device involves including MEMS structures that in normal operation are robust against the presence of particles but which can be made sensitive to that presence during a test mode prior to use, e.g., by switching the impedance of sensitive structures between an exceptionally sensitive condition during test and a normal sensitivity during operation; surrounding sensitive nodes with guard elements that are at the same potential as those nodes during operation, thereby offering protection against bridging particles, but are at a very different potential during test and reveal the particles by their resulting leakage currents; extending the sensitive nodes to interdigitate with or otherwise extend adjacent to the guard structures, which neither contribute to nor detract from the device operation but cover otherwise open areas with detection means during test; and/or converting benign areas in which particles might become trapped undetectably by electric fields during test to field-free regions by extending otherwise non-functional conductive layers so that the particles can then be moved into detection locations by providing some mechanical disturbance. | 2013-07-04 |
20130168676 | Super-Junction Structure of Semiconductor Device and Method of Forming the Same - A super-junction of a semiconductor device is formed by forming a polysilicon layer on a semiconductor substrate; patterning the polysilicon layer to form pillars for a super-junction structure; and growing an epitaxial layer between the pillars to form a continuous PN junction structure of the super-junction, which forms the super-junction structure more accurately. It is therefore possible to simplify the process for forming the super-junction without using a repetitive ion implantation process a trench process, thereby increasing productivity and device reliability. | 2013-07-04 |
20130168677 | FLEXIBLE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A method for manufacturing a flexible semiconductor device includes (i) forming an insulating film on the upper surface of metal foil, (ii) forming an extraction electrode pattern on the upper surface of the metal foil, (iii) forming a semiconductor layer on the insulating film such that the semiconductor layer is in contact with the extraction electrode pattern, (iv) forming a sealing resin layer on the upper surface of the metal foil such that the sealing resin layer covers the semiconductor layer and the extraction electrode pattern, and (v) forming electrodes by etching the metal foil, the metal foil being used as a support for the insulating film, the extraction electrode pattern, the semiconductor layer, and the sealing resin layer formed in (i) to (iv) and used as a constituent material for the electrodes in (v). The metal foil need not be stripped, and a high-temperature process can be used. | 2013-07-04 |
20130168678 | THIN-FILM SEMICONDUCTOR DEVICE FOR DISPLAY APPARATUS AND METHOD OF MANUFACTURING SAME - A thin-film semiconductor device includes: a substrate; a gate electrode above the substrate; a gate insulation film above the gate electrode; a channel layer above the gate insulation film, the channel layer having a raised part; a channel protection layer over the raised part of the channel layer, the channel protection layer comprising an organic material, and the organic material including silicon, oxygen, and carbon; an interface layer at an interface between a top surface of the raised part of the channel layer and the channel protection layer, and comprises at least carbon and silicon that derive from the organic material; and a source electrode and a drain electrode each provided over a top surface and a side surface the channel protection layer, a side surface of the interface layer, a side surface of the raised part of the channel layer, and a top surface of the channel layer. | 2013-07-04 |
20130168679 | SEMICONDUCTOR DISPLAY DEVICE HAVING PATTERNED PADS AND IN CONTACT WITH A CIRCUIT BOARD BY THEMAL ADHESIVE RESIN MATERIAL - A display device includes a substrate comprising a display unit for displaying an image, a non-display unit around the display unit, and at least one first pad for sending an electrical signal to the display unit, a circuit board on the substrate and comprising at least one circuit terminal, and a conductive film between the substrate and the circuit board and including a plurality of conductive particles for electrically connecting the first pad and the circuit terminal, and an insulating resin surrounding the conductive particles, wherein the first pad includes a plurality of fine pad lines, and a region into which the insulating resin is dispersed during a thermal compressing operation located between adjacent ones of the fine pad lines. | 2013-07-04 |
20130168680 | STEREOSCOPIC IMAGE DISPLAY SUBSTRATE - A stereoscopic image display substrate includes a base substrate, a data line, a plurality of gate line parts and a pixel electrode part. The data line is disposed on the base substrate. The data line extends in a first direction. The gate line parts are disposed on the base substrate. Each gate line part includes a plurality of gate lines extending in a second direction different from the first direction. The gate lines are adjacent to each other. The pixel electrode part is disposed between the gate line parts. The pixel electrode part includes at least three pixel electrodes connected to the data line. | 2013-07-04 |
20130168681 | FLEXIBLE SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, IMAGE DISPLAY DEVICE USING THE SAME AND METHOD FOR MANUFACTURING THE IMAGE DISPLAY DEVICE - There is provided a method for manufacturing a flexible semiconductor device. The method of the flexible semiconductor device according to the present invention comprises the steps of: (i) forming an insulating layer on one of principal surfaces of a metal foil; (ii) forming a semiconductor layer on the insulating layer, and then forming source and drain electrodes so that the source and drain electrodes contact with the semiconductor layer; (iii) forming a flexible film layer so that the flexible film layer covers the semiconductor layer and the source and drain electrodes; (iv) forming vias in the flexible film layer, and thereby a semiconductor device precursor is provided; and (v) subjecting the metal foil to a processing treatment, and thereby forming a gate electrode from the metal foil, wherein, in the step (v) of the processing treatment of the metal foil, the gate electrode is formed in a predetermined position by using at least one of the vias of the semiconductor device precursor as an alignment marker. | 2013-07-04 |