25th week of 2012 patent applcation highlights part 17 |
Patent application number | Title | Published |
20120153252 | Nano-Structured Light-Emitting Devices - A nano-structured light-emitting device (LED) includes: a plurality of nanostructures on a first type semiconductor layer. Each of the plurality of nanostructures includes: a first type semiconductor nanocore on a portion of the first type semiconductor layer; a current spreading layer formed to cover a surface of the first type semiconductor nanocore and formed of an Al | 2012-06-21 |
20120153253 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type first semiconductor layer, a p-type second semiconductor layer and a light emitting layer. The light emitting layer is provided between the first and second semiconductor layers, and includes a plurality of barrier layers including a nitride semiconductor and a well layer provided between the barrier layers and including a nitride semiconductor containing In. The barrier layers and the well layer are stacked in a first direction from the second semiconductor layer toward the first semiconductor layer. The well layer has a p-side interface part and an n-side interface part. Each of the p-side and the n-side interface part include an interface with one of the barrier layers. A variation in a concentration of In in a surface perpendicular to the first direction of the p-side interface part is not more than that of the n-side interface part. | 2012-06-21 |
20120153254 | Inverted Light Emitting Diode Having Plasmonically Enhanced Emission - An LED device having plasmonically enhanced emission is provided. The device includes an inverted LED structure with a coating of metal nanoparticles on the surface chosen to match the plasmonic response to the peak emission from the active quantum well (QW) emission region of the LED. The active QW emission region is separated from the metal nanoparticles on the surface by a thin n-type contact layer disposed on a top side of the active QW emission. A p-type layer is disposed immediately beneath the active QW emission region and injects holes into the active QW emission region. The n-type contact layer is sufficiently thin to permit a coupling of the surface plasmons (SPs) from the metal nanoparticles and the excitons in the active QW emission region. The SP-exciton coupling provides an alternative decay route for the excitons and thus enhances the photon emission from the LED device. | 2012-06-21 |
20120153255 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - Disclosed is a light emitting device, including: a substrate, a light emitting structure provided on the substrate, which includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer laminated in sequential order, a transmissive electrode layer arranged on the light emitting structure, an electrode provided on the light emitting structure. Here, the electrode includes a pad electrode and a finger electrode, and an insertion element is placed between the finger electrode and the second conductive semiconductor layer, wherein the insertion element is formed such that at least one region thereof overlaps with the finger electrode in a vertical direction. Since the insertion element is formed under the finger electrode, it is possible to prevent light emitted by the active layer from being absorbed by the finger electrode. Accordingly, luminous efficacy of the light emitting device may be further enhanced. | 2012-06-21 |
20120153256 | LIGHT EMITTING DEVICE, METHOD FOR FABRICATING THE SAME, AND LIGHT EMITTING DEVICE PACKAGE - A light emitting device is provided. The light emitting device comprises an active layer comprising a plurality of well layers and a plurality of barrier layers. The bather layers comprise a first barrier layer having a first band gap which is the nearest to the second conductive type semiconductor layer, a second barrier layer adjacent to the first barrier, and a third barrier layer between the second bather layer and the first conductive type semiconductor layer. The well layers comprise a first well layer having a third band gap different from the first band gap between the first and second bather layers, and a second well layer between the second barrier layer and the third barrier layer, the second well layer having a second band gap. The first well layer has a thickness thinner than that of the second well layer. | 2012-06-21 |
20120153257 | HIGH-QUALITY NON-POLAR/SEMI-POLAR SEMICONDUCTOR ELEMENT ON AN UNEVENLY PATTERNED SUBSTRATE AND A PRODUCTION METHOD THEREFOR - Provided are a high-quality non-polar/semi-polar semiconductor device with reduced defect density and improved internal quantum efficiency and light extraction efficiency, and a manufacturing method thereof. The manufacturing method is a method for manufacturing a semiconductor device, in which a template layer and a semiconductor device structure are formed on a sapphire substrate having a crystal plane for growing a non-polar or semi-polar nitride semiconductor layer. The sapphire substrate is etched to form uneven patterns, and the template layer including a nitride semiconductor layer and a GaN layer is formed on the sapphire substrate in which the uneven patterns are formed. | 2012-06-21 |
20120153258 | GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A nitride-based semiconductor light-emitting element includes an n-GaN layer | 2012-06-21 |
20120153259 | LIGHT EMITTING DIODE WITH IMPROVED STRUCTURE - A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based semiconductor layers grown on a non-polar substrate. The semiconductor layers include a non-polar N-type semiconductor layer, a non-polar P-type semiconductor layer, and non-polar active region layers positioned between the N-type semiconductor layer and the P-type semiconductor layer. The non-polar active region layers include a well layer and a barrier layer with a superlattice structure. | 2012-06-21 |
20120153260 | CHEMICALLY-ETCHED NANOSTRUCTURES AND RELATED DEVICES - A method of etching active quantum nanostructures provides the step of laterally etching of an intermediate active quantum nanostructure layer interposed between cladding layers. The lateral etching can be carried out on at least one side of the intermediate active quantum nanostructure layer selectively, with respect to the cladding layers to define at least one lateral recess or spacing in the intermediate active quantum nanostructure layer and respective lateral protrusions of cladding layers protruding with respect to the intermediate active quantum nanostructure layer. This method can be applied to create devices including active quantum nanostructures such as, for example, three-dimensional photonic crystals, a photonic crystal double-slab and a photonic crystal laser. | 2012-06-21 |
20120153261 | Semiconductor Device And Method Of Manufacturing The Same - Example embodiments relate to a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device may include a pre-seeding layer and a nucleation layer. The pre-seeding layer may include a first material for pre-seeding and a second material for masking so as to reduce tensile stress. | 2012-06-21 |
20120153262 | Systems and process for forming carbon nanotube sensors - A process for forming a functionalized sensor for sensing a molecule of interest includes providing at least one single or multi-wall carbon nanotube having a first and a second electrode in contact therewith on a substrate; providing a third electrode including a decorating material on the substrate a predetermined distance from the at least one single or multi-wall carbon nanotube having a first and a second electrode in contact therewith, wherein the decorating material has a bonding affinity for a bioreceptors that react with the molecule of interest; and applying a voltage to the third electrode, causing the decorating material to form nanoparticles of the decorating material on the at least one single or multi-wall carbon nanotube. | 2012-06-21 |
20120153263 | TUNNEL FIELD EFFECT TRANSISTOR - The present disclosure relates to the field of microelectronic transistor fabrication and, more particularly, to the fabrication of a tunnel field effect transistor having an improved on-current level without a corresponding increasing the off-current level, achieved by the addition of a transition layer between a source and an intrinsic channel of the tunnel field effect transistor. | 2012-06-21 |
20120153264 | Methods For Forming Organic Thin Film, Organic Thin Films, Thin Film Transistors Including The Same, And Electric Devices Including The Same - A method of forming an organic thin film may include providing a substrate; providing an organic solution including an organic solute and a solvent having a boiling point of about 85° C. or less; dipping the substrate into the organic solution; removing the substrate from the organic solution; and/or precipitating the organic solute on the substrate to provide an organic thin film, wherein the removing the substrate from the organic solution is performed at a speed of about 10 to about 300 μm/s from one end of the substrate to the other end of the substrate. Accordingly, an organic thin film having advantageous characteristics and a wide area may be obtained. | 2012-06-21 |
20120153265 | SOLID SOLUTION INDUCING LAYER FOR WEAK EPITAXY GROWTH OF NON-PLANAR PHTHALOCYANINE - The present invention relates to solid solution inducing layer for the preparation of weak epitaxial films of non-planar phthalocyanine and the thin film of non-planar phthalocyanine generated from the weak epitaxial growth on the solid solution inducing layer and organic thin film transistor based on the weak rpitaxy growth thin film of non-planar phthalocyanine. The solid solution inducing layer is prepared at certain substrate temperature by vapor co-deposition of any two inducing layer molecules presented by Formula I and Formula II. | 2012-06-21 |
20120153266 | FLUORESCENT ISOINDOLINE DYES - The present invention provides a new class of excited state intramolecular charge transfer (ESIPT) dye compounds based on mono or dihydroxy substituted 1,3-bisiminoisoindole motif and metal complexes containing such compounds as ligands. The present invention also provides OLEDs containing the compound and/or metal complex as the emissive material. | 2012-06-21 |
20120153267 | ORGANIC ELECTROLUMINESCENT DEVICE - An organic EL device | 2012-06-21 |
20120153268 | ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device includes an anode, an emitting layer, an electron-transporting region, and a cathode, the anode, the emitting layer, the electron-transporting region, and the cathode being stacked in this order, the emitting layer including a host material, and a dopant material that emits fluorescence having a main peak wavelength of 550 nm or less, the electron-transporting region including a barrier layer that is adjacent to the emitting layer, and the barrier layer including a barrier material that includes an electron-transporting structural part, and a triplet barrier structural part that includes a fused polycyclic aromatic hydrocarbon compound, and satisfies the relationship “E | 2012-06-21 |
20120153269 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE USING THE SAME - An organic light-emitting device includes an anode, a cathode, and an organic compound layer interposed between the anode and the cathode. The organic compound layer contains a heterocyclic compound having 4,10-Diazachrysene. | 2012-06-21 |
20120153270 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE USING THE SAME - An organic light-emitting device includes an anode, a cathode, and an organic compound layer interposed between the anode and the cathode. The organic compound layer contains a heterocyclic compound represented by general formula [1]:
| 2012-06-21 |
20120153271 | LEAVING SUBSTITUENT-CONTAINING COMPOUND, ORGANIC SEMICONDUCTOR MATERIAL, ORGANIC SEMICONDUCTOR FILM CONTAINING THE MATERIAL, ORGANIC ELECTRONIC DEVICE CONTAINING THE FILM, METHOD FOR PRODUCING FILM-LIKE PRODUCT, PI-ELECTRON CONJUGATED COMPOUND AND METHOD FOR PRODUCING THE PI-ELECTRON CONJUGATED COMPOUND - A leaving substituent-containing compound including a partial structure represented by the following General Formula (I): where a pair of X | 2012-06-21 |
20120153272 | ORGANIC ELECTROLUMINESCENCE DEVICE - An object of the present invention is to provide an organic electroluminescence device having excellent light emission efficiency and durability, in particular, durability when driving at a high temperature. Provided is an organic electroluminescence device including on a substrate a pair of electrodes, and at least one layer of an organic layer including a light emitting layer containing a light emitting material disposed between the electrodes, wherein the light emitting layer includes at least each one of specific indolocarbazole derivatives and specific condensed ring metal complexes. | 2012-06-21 |
20120153273 | MATERIAL FOR ORGANIC ELECTROLUMINESCENCE DEVICE AND ORGANIC ELECTROLUMINESCENCE DEVICE - A material for an organic electroluminescence device including a phosphorescent metal complex containing a monoanionic bidentate ligand represented by the following formula (A1-1) or formula (A3-1) as defined in the specification and a non-radiative metal having an atomic weight of 40 or more, an organic electroluminescence device including the material for an organic electroluminescence device, and a light emitting unit, a display unit and an illumination unit each including the organic electroluminescence device are provided. | 2012-06-21 |
20120153274 | AMBIPOLAR POLYMERIC SEMICONDUCTOR MATERIALS AND ORGANIC ELECTRONIC DEVICES - There is provided compounds of formula I, ambipolar semiconductor material derived from such compounds and devices comprising such ambipolar semiconductor material. | 2012-06-21 |
20120153275 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To manufacture a transistor whose threshold voltage is controlled without using a backgate electrode, a circuit for controlling the threshold voltage, and an impurity introduction method. To manufacture a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption using the transistor. A gate electrode including a tungsten oxide film whose composition is controlled is used. The composition or the like is adjusted by a film formation method of the tungsten oxide film, whereby the work function can be controlled. By using the tungsten oxide film whose work function is controlled as part of the gate electrode, the threshold of the transistor can be controlled. Using the transistor whose threshold voltage is controlled, a semiconductor device having favorable electrical characteristics, high reliability, and low power consumption can be manufactured. | 2012-06-21 |
20120153276 | SEMICONDUCTOR DEVICE - An object is to provide a semiconductor memory device capable of shortening writing operation by concurrently determining potentials of memory cells on one word line. A plurality of transistors having switching characteristics are connected to one potential control circuit, whereby writing potentials are determined concurrently. A potential continues to be changed (raised or decreased) stepwise, a desired potential is determined while changing the potential, and whether data resulted from reading with respect to written data is correct or not is continuously checked, so that high-precision writing operation and high-precision reading operation can be achieved. In addition, favorable switching characteristics and holding characteristics of a transistor including an oxide semiconductor are utilized. | 2012-06-21 |
20120153277 | CHANNEL-ETCH TYPE THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A channel layer is formed on a substrate by using an oxide semiconductor and then a sacrificial layer of an oxide containing In, Zn and Ga and representing an etching rate greater than the etching rate of the oxide semiconductor is formed on the channel layer. Thereafter, a source electrode and a drain electrode are formed on the sacrificial layer and the sacrificial layer exposed between the source electrode and the drain electrode is removed by means of wet etching. | 2012-06-21 |
20120153278 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME - A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include a gate electrode formed on a substrate; an active layer made of an oxide semiconductor and insulated from the gate electrode by a gate insulating layer; source and drain electrodes coupled to the active layer; and an interfacial stability layer formed on one or both surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristic as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented. | 2012-06-21 |
20120153279 | SEMICONDUCTOR SENSOR RELIABILITY OPERATION - Embodiments of the present invention provide a semiconductor sensor reliability system and method. Specifically, the present invention provides in-situ positioning of a reliability sensor (hereinafter sensors) within each functional block, as well as at critical locations, of a semiconductor system. The quantity and location of the sensors are optimized to have maximum sensitivity to known process variations. In general, the sensor models a behavior (e.g., aging process) of the location (e.g., functional block) in which it is positioned and comprises a plurality of stages connected as a network and a self-digitizer. Each sensor has a mode selection input for selecting a mode thereof and an operational trigger input for enabling the sensor to model the behavior. The model selection input and operation trigger enable the sensor to have an operational mode in which the plurality of sensors are subject to an aging process, as well as a measurement mode in which an age of the plurality of sensors is outputted. Based on the output, one or more functional blocks are modified by a control sensor component to reduce semiconductor system degredation in real-time. | 2012-06-21 |
20120153280 | INTEGRATED CIRCUIT FOR DETECTING DEFECTS OF THROUGH CHIP VIA - An integrated circuit that detects whether a through silicon via has defects or not, at a wafer level. The integrated circuit includes a semiconductor substrate, a through silicon via configured to be formed in the semiconductor substrate to extend to a certain depth from the surface of the semiconductor substrate, an output pad, and a current path providing unit configured to provide a current, flowing between the semiconductor substrate and the through silicon via, to the output pad during a test mode. | 2012-06-21 |
20120153281 | APPARATUS AND METHODS FOR DETERMINING OVERLAY OF STRUCTURES HAVING ROTATIONAL OR MIRROR SYMMETRY - A semiconductor target for determining a relative shift between two or more successive layers of a substrate is provided. The target comprises a plurality of first structures formed in a first layer, and the first structures have a first center of symmetry (COS). The target further comprises a plurality of second structures formed in a second layer, and the second structures have second COS. The difference between the first COS and the second COS corresponds to an overlay error between the first and second layer and wherein the first and second structures have a 180° rotational symmetry, without having a 90° rotational symmetry, with respect to the first and second COS, respectively. | 2012-06-21 |
20120153282 | SEMICONDUCTOR DEVICE - Miniaturization and high-performance of a semiconductor device are promoted, which has a package on package (POP) structure in which a plurality of semiconductor packages is stacked in a multistage manner. A testing conductive pad for determining the quality of a conduction state of a microcomputer chip and a memory chip is arranged outside a conductive pad for external input/output and thereby the route of a wire that couples the microcomputer chip and the memory chip to the testing conductive pad is reduced in length. Further, the wire that couples the microcomputer chip and the memory chip to the testing conductive pad is coupled to a pad in the outer row among conductive pads in two rows to be coupled to the microcomputer chip. | 2012-06-21 |
20120153283 | Display Panel Structure of Electrophoretic Display Device, Display Device Structure, and Method for Manufacturing Display Device - A display device structure includes a substrate having an active region and an electrostatic protection circuit region. The first metal layer, the first insulation layer, and an amorphous silicon layer are sequentially disposed on the substrate; the first opening passes through the first insulation layer for exposing part of the first metal layer. The second metal layer, disposed on the first insulation layer or the amorphous silicon layer, fills the first opening to contact with the first metal layer; the second insulation layer and the flat layer are disposed on the second metal layer, in which the region of the flat layer is overlapped the electrostatic protection circuit region. The second opening passes through the second insulation layer and the flat layer for exposing the second metal layer, in which the third metal layer fills the second opening to contact with the second metal layer. | 2012-06-21 |
20120153284 | LIGHT EMITTING DEVICE - A light emitting device is provided that includes a substrate, a light emitting unit formed on the substrate, and an encapsulation unit. The encapsulation unit may include a first region corresponding to the light emitting unit and a second region coalesced with the substrate. The encapsulation unit of the first region or a part of the encapsulation unit of the first region may have a positive curvature. | 2012-06-21 |
20120153285 | SOLUTION PROCESSABLE PASSIVATION LAYERS FOR ORGANIC ELECTRONIC DEVICES - The present invention relates to solution processable passivation layers for organic electronic (OE) devices, and to OE devices, in particular organic field effect transistors (OFETs), comprising such passivation layers. | 2012-06-21 |
20120153286 | ORGANIC LIGHT EMITTING DISPLAY DEVICE - An organic light emitting display device has high transmittancy to external light. The organic light emitting display device includes a substrate; a first wiring formed on the substrate in a first direction; second and third wirings formed on the substrate in a second direction; a first thin film transistor connected to the first and second wirings; a second thin film transistor connected to the first thin film transistor and the third wiring; and an organic light emitting display panel (OLED) connected to the second thin film transistor, wherein the second and third wirings are formed of graphene. | 2012-06-21 |
20120153287 | ETCHANT, DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE USING THE SAME - An etchant includes: 5 to 20 wt % of persulfate, 1 to 10 wt % of at least one compound of an inorganic acid, an inorganic acid salt, or a mixture thereof, 0.3 to 5 wt % of a cyclic amine compound, 1 to 10 wt % of at least one compound of an organic acid, an organic acid salt, or a mixture thereof, 0.1 to 5 wt % of p-toluenesulfonic acid, and water, based on the total weight of the etchant. A copper-titanium etchant further includes 0.01 to 2 wt % of a fluoride-containing compound. A method of forming a display device using the etchant, and a display device, are also disclosed. | 2012-06-21 |
20120153288 | THIN FILM TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF - An embodiment of the disclosed technology provides a thin film transistor device comprising a source electrode, a drain electrode, a gate electrode, an active layer corresponding to the gate electrode, and a gate insulation layer formed between the gate electrode and the active layer; a concave region corresponding to the gate electrode is provided in the gate insulation layer. | 2012-06-21 |
20120153289 | SEMICONDUCTOR DEVICE, ACTIVE MATRIX SUBSTRATE, AND DISPLAY DEVICE - A semiconductor device which can achieve an increase in ON current and which can also achieve a reduction in leak current and an active matrix substrate and a display device using such a semiconductor device are provided. In a switching element (semiconductor device) ( | 2012-06-21 |
20120153290 | FLAT DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A flat display device is provided. The flat display device a substrate divided into an active region for displaying an image and a peripheral region that does not display the image, and includes: a gate line that crosses a data line to define a pixel region in the active region; a thin film transistor in a region near a crossing of the gate line and the data line; a first common electrode in the pixel region; a storage electrode on the first common electrode to provide storage capacitance; a pixel electrode electrically connected with the storage electrode and overlapping the pixel region, the data line, and the gate line; and an ink film covering the active region and the peripheral region, and having microcapsules including charged particles. | 2012-06-21 |
20120153291 | Vertical Memory Devices Including Indium And/Or Gallium Channel Doping - A vertical memory device may include a substrate, a first selection line on the substrate, a plurality of word lines on the first selection line, a second selection line on the plurality of word lines, and a semiconductor channel. The first selection line may be between the plurality of word lines and the substrate, and the plurality of word lines may be between the first and second selection lines. Moreover, the first and second selection lines and the plurality of word lines may be spaced apart in a direction perpendicular with respect to a surface of the substrate. The semiconductor channel may extend away from the surface of the substrate adjacent sidewalls of the first and second selection lines and the plurality of word lines. In addition, portions of the semiconductor channel adjacent the second selection line may be doped with indium and/or gallium. Related methods are also discussed. | 2012-06-21 |
20120153292 | LIQUID CRYSTAL DISPLAY DEVICE - In a liquid crystal display device that uses a top gate TFT, a contact hole is formed to connect to an image signal line. An inorganic passivation film and an organic passivation film are formed in this order so as to cover the TFT, on which a common electrode is formed. Then, an interlayer insulating film is formed on the common electrode. A through hole for gas release is formed in the interlayer insulating film. The diameter of the through hole is greater than the diameter of the contact hole, so as to be able to easily release gas from the organic passivation film, and to prevent the interlayer insulating film from peeling off. | 2012-06-21 |
20120153293 | Display Device - There is provided an active matrix EL display device that can display a clear multi gray-scale color display to reduce the shift in the potential caused by the potential drop due to the wiring resistance of a power source supply line, in order to decrease the unevenness in a display region. A plurality of drawing out ports of the power source supply line are arranged. Further, in the wiring resistance between the external input terminal and the pixel portion power source supply line, potential compensation is performed by supplying potential to the power source supply line by a feedback amplifier. Further, in addition to above structure, the power source supply line may be arranged in a matrix. | 2012-06-21 |
20120153294 | Semiconductor Structures Having Directly Bonded Diamond Heat Sinks and Methods for Making Such Structures - A semiconductor structure is bonded directly to a diamond substrate by Van der Waal forces. The diamond substrate is formed by polishing a surface of diamond to a first degree of smoothness; forming a material, such as diamond, BeO, GaN, MgO, or SiO | 2012-06-21 |
20120153295 | IONIC JUNCTION FOR RADIATION DETECTORS - Radiation detector. The detector includes an ionic junction having an ionically bonded wide band gap material having a first region dominated by positively charged ionic defects in intimate contact with a second region dominated by negatively charged ionic defects forming depleted regions on both sides of the junction resulting in a built-in electric field. The detector also includes an ionic junction having a first ionically bonded wide band gap material dominated by positively charged ionic defects in intimate contact with a second ionically bonded wide band gap material dominated by negatively charged ionic defects forming depleted regions on both sides of the junction resulting in a built-in electric field. Circuit means are provided to establish a voltage across the junction so that radiation impinging upon the junction will cause a current to flow in the circuit. | 2012-06-21 |
20120153296 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE - A semiconductor device, a method of manufacturing the semiconductor device, and an electronic device including the semiconductor device are provided. The semiconductor device includes a silicon substrate; a plurality of nanorods formed on the silicon substrate; and a nitride semiconductor layer formed on the silicon substrate and the plurality of nanorods, wherein a plurality of voids are formed between the silicon substrate and the nitride semiconductor in regions between the plurality of nanorods. | 2012-06-21 |
20120153297 | OHMIC CATHODE ELECTRODE ON THE BACKSIDE OF NONPOLAR M-PLANE (1-100) AND SEMIPOLAR (20-21) BULK GALLIUM NITRIDE SUBSTRATES - Ohmic cathode electrodes are formed on the backside of nonpolar m-plane (1-100) and semipolar (20-21) bulk gallium nitride (GaN) substrates. The GaN substrates are thinned using a mechanical polishing process. For m-plane GaN, after the thinning process, dry etching is performed, followed by metal deposition, resulting in ohmic I-V characteristics for the contact. For (20-21) GaN, after the thinning process, dry etching is performed, followed by metal deposition, followed by annealing, resulting in ohmic I-V characteristics for the contact as well. | 2012-06-21 |
20120153298 | EPITAXIAL GROWTH SYSTEM FOR FAST HEATING AND COOLING - A system for crystal growth having rapid heating and cooling. A fluid-cooling jacket having a reflective shield contained therein is disposed around a heating cylinder in which crystal growth takes place. A heating coil is disposed round the cooling jacket. The invention also includes a method of crystal growth and semiconductor devices formed using the inventive methods and systems. | 2012-06-21 |
20120153299 | LED CHIP - The present invention provides a LED chip structure. The LED chip structure comprises a substrate and an N type layer disposed on the substrate; a P type layer disposed on the N type layer; a N type contact pad and a P type contact pad disposed below the substrate; conductive through holes disposed through the substrate to electrically connect the N type layer to the N type contact pad and the P type layer to the conduct heat generated by the P type layer and the N type layer downward. | 2012-06-21 |
20120153300 | SEMICONDUCTOR DEVICES WITH BACK SURFACE ISOLATION - Circuits, structures and techniques for independently connecting a surrounding material in a part of a semiconductor device to a contact of its respective device. To achieve this, a combination of one or more conductive wells that are electrically isolated in at least one bias polarity are provided. | 2012-06-21 |
20120153301 | III-V SEMICONDUCTOR STRUCTURES INCLUDING ALUMINUM-SILICON NITRIDE PASSIVATION - A semiconductor structure includes a semiconductor layer that is passivated with an aluminum-silicon nitride layer. When the semiconductor layer in particular comprises a III-V semiconductor material such as a group III nitride semiconductor material or a gallium nitride semiconductor material, the aluminum-silicon nitride material provides a superior passivation in comparison with a silicon nitride material. | 2012-06-21 |
20120153302 | RECESSED GATE-TYPE SILICON CARBIDE FIELD EFFECT TRANSISTOR AND METHOD OF PRODUCING SAME - A SiC MISFET, in which a source region and a drain region ( | 2012-06-21 |
20120153303 | SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME - A semiconductor device | 2012-06-21 |
20120153304 | SOLID STATE LIGHTING DEVICES WITH ACCESSIBLE ELECTRODES AND METHODS OF MANUFACTURING - Various embodiments of light emitting dies and solid state lighting (“SSL”) devices with light emitting dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a light emitting die includes an SSL structure configured to emit light in response to an applied electrical voltage, a first electrode carried by the SSL structure, and a second electrode spaced apart from the first electrode of the SSL structure. The first and second electrode are configured to receive the applied electrical voltage. Both the first and second electrodes are accessible from the same side of the SSL structure via wirebonding. | 2012-06-21 |
20120153305 | Radiation Emitting Device - A radiation emitting device comprising a first electrode, which emits first charge carriers having a first charge during operation, a first charge carrier transporting layer, which comprises a fluorescent substance, a second charge carrier transporting layer, which contains a phosphorescent substance, and a second electrode, which emits second charge carriers having a second charge during operation, wherein during operation the second charge carrier transporting layer is largely free of first charge carriers. | 2012-06-21 |
20120153306 | HIGH POWER LEDS WITH NON-POLYMER MATERIAL LENSES AND METHODS OF MAKING THE SAME - LED chips and packages are disclosed having lenses made of materials that resist degradation at higher operation temperatures and humidity, and methods of fabricating the same. The lenses can be made of certain materials that can withstand high temperatures and high humidity, with the lenses mounted to the LED prior to certain critical metallization steps. This helps avoid damage to the metalized part that might occur as a result of the high mounting or bonding temperature for the lens. One embodiment of an LED chip comprises a flip-chip LED and a lens mounted to the topmost surface of the flip-chip LED. Lenses can be bonded to LEDs at the wafer level or at the chip level. The lens comprises a non-polymer material and the LED chip is characterized as having substantially no polymer materials in contact with the LED chip. | 2012-06-21 |
20120153307 | LED LIGHTING DEVICE WITH EXCELLENT HEAT DISSIPATION PROPERTY - The present invention relates to an improved LED lighting device with good heat dissipation, comprising: a housing; a copper circuit layer, disposed on the housing; a plurality of LED chips, disposed on the copper circuit layer; and a white reflective member, disposed on the plurality of LED chips and the copper circuit layer, wherein the white reflective member is used to increase the light-emitting efficiencies of the LED chips. In the present invention, the copper circuit layer is directly disposed on the housing without using an aluminum substrate or a print circuit board, so that the cost of the improved LED lighting device is reduced; moreover, that also prevents the LED chips from damage when welding the LED chips, and makes the improved LED lighting device performing better heat dissipation property. | 2012-06-21 |
20120153308 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - An organic light-emitting display apparatus is disclosed. In one embodiment, the display apparatus includes i) a substrate and ii) an organic light-emitting device formed on the substrate, the organic light-emitting device including a stack structure including a first electrode, an organic light-emitting layer, and a second electrode. The apparatus may further include a sealing layer formed on the substrate so as to cover the organic light-emitting device, the sealing layer including an inorganic layer and a porous layer interposed between the sealing layer and the organic light-emitting device. One embodiment can reduce a stress due to a sealing inorganic layer so as to maintain characteristics for a long time in a severe environment and not affect an organic light-emitting device. | 2012-06-21 |
20120153309 | DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - A display apparatus includes a first insulating substrate including a display area in which a first opening is formed, as well as a non-display area. A second insulating substrate faces the first insulating substrate. The second insulating substrate includes a shutter part having a second opening corresponding to the first opening. The shutter part moves between two different positions to transmit or block light according to an overlap between the first opening and the second opening. | 2012-06-21 |
20120153310 | DISPLAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - A display substrate includes an insulating substrate, a signal line, first and second pixel electrodes, a connection line and an insulating layer. The signal line is disposed on the insulating substrate. The first pixel electrode is electrically connected to the signal line through a switching element. The second pixel electrode overlaps the first pixel electrode. The connection line contacts an end portion of the signal line and extends to an end portion of the insulating substrate. The insulating layer is disposed between the first and second pixel electrodes and covers the connection line. The connection line is protected by the insulating layer, and the reliability of the display substrate is enhanced. | 2012-06-21 |
20120153311 | LOW-COST SOLID-STATE BASED LIGHT EMITTING DEVICES WITH PHOTOLUMINESCENT WAVELENGTH CONVERSION AND THEIR METHOD OF MANUFACTURE - A method of manufacturing a light emitting device comprises: mounting and electrically connecting a plurality of solid-state light emitters onto a substrate in a known configuration; screen printing a pattern of at least one photo luminescent material onto a surface of a light transmissive carrier such that there is a respective region of photo luminescent material corresponding to a respective one of the light emitters and mounting the carrier to the substrate such that each region of photo luminescent material overlays a respective one of the light emitters. Where the light transmissive carrier comprises a thermo formable material the method can further comprise heating and vacuum molding the carrier such as to form an array of hollow features configured such that a respective feature corresponds to a respective light emitter and is capable of housing a respective light emitter. | 2012-06-21 |
20120153312 | ARRAY SUBSTRATES AND METHODS FOR MANUFACTURING THE SAME - Disclosed is a method of forming array substrates having a peripheral wiring area and a display area. The method is processed by only three lithography processes with two multi-tone photomasks and one general photomask. In the peripheral wiring area, the top conductive line directly contacts the bottom conductive line without any other conductive layer. The conventional lift-off process is eliminated, thereby preventing a material (not dissolved by a stripper) from suspending in the stripper or remaining on the array substrate surface. | 2012-06-21 |
20120153313 | LIGHT EMITTING DEVICE AND ILLUMINATION APPARATUS USING SAME - A light emitting device includes a solid light-emitting element; a mounting substrate mounting the solid light-emitting element thereon; an encapsulating member encapsulating the solid light-emitting element; and a lead frame electrically connected to the solid light-emitting element through a wire. The lead frame is arranged on a rear surface of the mounting substrate, and the mounting substrate includes a front mounting surface on which the solid light-emitting element is mounted. The front mounting surface having a smooth surface region covered with the encapsulating member. The mounting substrate further includes a wire hole through which the wire extends from the front mounting surface of the mounting substrate to the rear surface thereof. | 2012-06-21 |
20120153314 | LIGHT SIGNAL - A light signal contains a semiconductor light source and a convex lens system for representing signal aspects, especially on rail-bound traffic routes. In order to eliminate the need for monochrome semiconductor light sources, the semiconductor light source is a white point light source. A signal aspect-specific color filter is provided in the aperture region of the point light source. | 2012-06-21 |
20120153315 | LIGHT EMITTING DEVICE - A light emitting device includes: a chip-mounting base formed with a plurality of conductive contacts; a reflector mounted on the chip-mounting base and defining a central hole; a first light emitting chip mounted on the chip-mounting base within the central hole and in electrical contact with respective ones of the conductive contacts for generating light with a first primary wavelength; a second light emitting chip stacked on and in electrical contact with the first light emitting chip for generating light with a second primary wavelength different from the first primary wavelength; and an encapsulant filling the central hole and capable of converting the first and second primary wavelengths into first and second secondary wavelengths, respectively. | 2012-06-21 |
20120153316 | LIGHT EMITTING DEVICE HAVING A TRANSPARENT THERMALLY CONDUCTIVE LAYER - A light emitting device and method of producing the same is disclosed. The light emitting device includes a transparent thermally conductive layer, a phosphor layer provided on the transparent thermally conductive layer, wherein the phosphor layer is not enclosed within any layers not containing phosphor, and at least one light emitting semiconductor arranged to emit light toward the transparent thermally conductive layer and the phosphor layer. | 2012-06-21 |
20120153317 | LIGHT EMITTING DIODE (LED) DEVICES, SYSTEMS, AND METHODS - Light emitting diode (LED) devices, systems, and methods are disclosed. In one aspect, an illumination panel can be configured to provide backlighting for a liquid crystal display (LCD) panel. The illumination panel can include one or more LEDs arranged in an array. The one or more LEDs can be attached using metal-to-metal die attach methods over an illumination panel, or attached within packages disposed over the illumination panel. In one aspect, the one or more LEDs can be attached using robust metal-to-metal die attach techniques and/or materials disclosed herein. | 2012-06-21 |
20120153318 | WHITE LIGHT ELECTROLUMINESCENCE DEVICE - A white light electroluminescence device includes a first light emitting unit, a second light emitting unit and a connecting layer between the first and the second light emitting units. The connecting layer electrically connects the first and the second light emitting units in series. The first light emitting unit includes a first electrode layer and a first light emitting layer on the first electrode layer, wherein the first light emitting layer includes a first blue light emitting layer and a red light emitting layer having a first co-host material and a first dopant material. The second light emitting unit includes a second light emitting layer and a second electrode layer on the second light emitting layer, wherein the second light emitting layer has a second blue light emitting layer and a green light emitting layer having a second co-host material and a second dopant material. | 2012-06-21 |
20120153319 | SELF-ILLUMINATING DISPLAY AND METHOD FOR MAKING SAME - A self-illuminating display includes a substrate, and a number of light emitting units. The light emitting units are formed on the substrate in an array fashion. Each of the light emitting units includes a first electrode, a second electrode formed on the substrate and a number of light emitting nanowires. The first electrode includes a number of first arms, and the second electrode includes a number of second arms. Each of the first arms opposes a corresponding second arm. Each of light emitting nanowires interconnects the first arm and the corresponding second arm. Each of the light emitting nanowires has a p-n junction. | 2012-06-21 |
20120153320 | LIGHT EMITTING DEVICE BASED ON OLEDS - The present invention relates to a light emitting device comprising several groups of stripe shaped organic light emitting diodes ( | 2012-06-21 |
20120153321 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An OLED display is disclosed. The display includes a substrate main body where a plurality of pixel areas are formed. Each pixel area includes an opaque area and a transparent area, and the opaque area includes a display area that emits light. The display area and the transparent area are separated by a conductive line disposed therebetween. | 2012-06-21 |
20120153322 | LIGHT EMITTING DIODE SOURCE WITH PROTECTIVE BARRIER - An apparatus having a substrate, an LED light source attached to the substrate, an electrical connector attached to the substrate and electrically connected to the LED light source, a potting material on the substrate and covering at least a portion of the electrical connector; and a barrier separating the potting material from the LED light source, the barrier having a height that exceeds the thickness of the potting material on the substrate. | 2012-06-21 |
20120153323 | Photolithographic led fabrication using phase-shift mask - Photolithographic methods of forming a roughened surface for an LED to improve LED light emission efficiency are disclosed. The methods include photolithographically imaging a phase-shift mask pattern onto a photoresist layer of a substrate to form therein a periodic array of photoresist features. The roughened substrate surface is created by processing the exposed photoresist layer to form a periodic array of substrate posts in the substrate surface. A p-n junction multilayer structure is then formed atop the roughened substrate surface to form the LED. The periodic array of substrate posts serve as scatter sites that improve the LED light emission efficiency as compared to the LED having no roughened substrate surface. The use of the phase-shift mask enables the use of affordable photolithographic imaging at a depth of focus suitable for non-flat LED substrates while also providing the needed resolution to form the substrate posts. | 2012-06-21 |
20120153324 | MULTILAYER-DOPED ORGANIC LIGHT EMITTING DIODE STRUCTURE - A multilayer-doped OLED structure comprises a substrate, an anode layer, a hole transport layer, a multilayer-doped organic light emitting layer, an electron transport layer, an electron injection layer and a metallic cathode layer. The multilayer-doped organic light emitting layer functions as a lighting source. The multilayer-doped organic light emitting layer is fabricated by a plurality of film deposition and doping processes. Thereby, the multilayer-doped organic light emitting layer has better quantum effect to improve luminous efficiency and illumination of OLED. | 2012-06-21 |
20120153325 | Integrated Reflector and Thermal Spreader and Thermal Spray Fabrication Method - A low-cost integrated reflector and heat spreader for high-density high power solid-state (e.g., LED) lighting arrays includes a base structure onto which is applied a sacrificial material. A relatively thick thermal spray coating is applied over the base structure and sacrificial material. The sacrificial material is removed. A channel(s) is thereby provided within the thermal spray coating layer and in physical contact with the base structure. The channel may be filled with a cooling fluid. A pulsating heat pipe heat spreader may thereby be provided. A reflective material may be provided either over another surface of the base structure or alternatively over the thermal spray coating layer to provide a surface for reflecting and directing light emitted from a solid state light source that may be secured to the integrated reflector and heat spreader. | 2012-06-21 |
20120153326 | LIGHT EMITTING DIODE PACKAGE - An exemplary light emitting diode (LED) package includes a substrate, an electrical member formed on the substrate, an LED chip mounted on the substrate and electrically connected to the electrical member, and a heat-dissipating member formed on the electrical member. The heat-dissipating member helps the LED chip to dissipate heat generated thereby when the LED chip is in operation. | 2012-06-21 |
20120153327 | SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME - A light-emitting device package including a lead frame formed of a metal and on which a light-emitting device chip is mounted; and a mold frame coupled to the lead frame by injection molding. The lead frame includes: a mounting portion on which the light-emitting device chip is mounted; and first and second connection portions that are disposed on two sides of the mounting portion in a first direction and connected to the light-emitting device chip by wire bonding, wherein the first connection portion is stepped with respect to the mounting portion, and a stepped amount is less than a material thickness of the lead frame. | 2012-06-21 |
20120153328 | LIGHT-EMITTING DEVICE, LIGHT-EMITTING DEVICE PACKAGE, METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE, AND METHOD OF PACKAGING LIGHT-EMITTING DEVICE - A light-emitting device including a phosphor layer, a light-emitting device package employing the light-emitting device, a method of manufacturing the light-emitting device, and a method of packaging the light-emitting device. The light-emitting device includes: a light-transmissive substrate having a top surface, a bottom surface, and side surfaces; a light-emitting unit formed on the top surface of the light-transmissive substrate; and a phosphor layer covering all the side surfaces of the light-transmissive substrate. According to the present invention, chromaticity inferiorities of light emitted from side surfaces of a substrate may be reduced. | 2012-06-21 |
20120153329 | WAFER SUBSTRATE BONDING STRUCTURE AND LIGHT EMITTING DEVICE COMPRISING THE SAME - A wafer substrate bonding structure may be provided that includes: a first substrate; and a conductive thin film which is disposed on the first substrate and includes a resin and conductive corpuscles included in the resin. | 2012-06-21 |
20120153330 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THEREOF - A light emitting device and a method of manufacturing thereof are disclosed. The light emitting device includes a light emitting element having first and second main surfaces opposed to each other; a wavelength converting part formed on the first main surface of the light emitting element; first and second terminals formed on the second main surface of the light emitting element; and a reflecting part formed to cover at least sides of the light emitting element and sides of the wavelength converting part. The light emitting device in which the color dispersion of white light is minimized with respect to the emitting direction of light, whereby the white light exhibits uniform characteristics and further, light emitting efficiency is improved is obtained. | 2012-06-21 |
20120153331 | LIGHT-EMITTING DEVICE - A light-emitting device includes a light-emitting layer and a fine structure interposed between the light-emitting layer and a substrate, wherein the fine structure includes a laminate of a first fine substructure and a second fine substructure, the first and second fine substructures each includes a first member and second members disposed in the first member, the second members having a refractive index different from the refractive index of the first member and being periodically arranged in a direction parallel to a surface of the substrate, and the second members of the first fine substructure and the second members of the second fine substructure have different arrangement periods. | 2012-06-21 |
20120153332 | EPITAXIAL STRUCTURE OF AN LED AND MANUFACTURING METHOD THEREOF - An epitaxial structure of a light emitting diode (LED) includes a substrate, an epitaxial layer, and a light capturing microstructure. The substrate has a top surface. The epitaxial layer is grown on the top surface of the substrate and has a P-type semiconductor layer, an active layer, and an N-type semiconductor layer in sequence. The light capturing microstructure is positioned on an upper portion of the epitaxial layer which is distant from the substrate. A manufacturing method of an epitaxial structure of an LED is also disclosed. The light capturing microstructure includes at least a concave and an insulating material filled in the at least a concave. | 2012-06-21 |
20120153333 | Light-Emitting Device and Lighting Device - A highly reliable light-emitting device which includes an organic EL element and is lightweight is provided. The light-emitting device includes a first organic resin layer; a first glass layer over the first organic resin layer; a light-emitting element over the first glass layer; a second glass layer over the light-emitting element; and a second organic resin layer over the second glass layer. The first organic resin layer and the first glass layer each have a property of transmitting visible light. The thickness of the first glass layer and the thickness of the second glass layer are independently greater than or equal to 25 μ and less than or equal to 100 μ. The light-emitting element includes a first electrode having a property of transmitting visible light, a layer containing a light-emitting organic compound, and a second electrode stacked in this order from the first glass layer side. | 2012-06-21 |
20120153334 | LED PACKAGE - A light emitting diode (LED) package is provided. The LED package includes an LED, a plurality of lead frames electrically connected with the LED, a package body having a receiving groove exposed to receive the LED therein and including a plurality of supporting units provided to project from an inner side surface of the receiving groove, and a filling member having an engaging groove engaged with the supporting unit at a circumference of a side surface thereof, and included inside the receiving groove. | 2012-06-21 |
20120153335 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor light-emitting device according to an embodiment includes a lead frame, an LED chip, a transparent resin, and a resin housing. The transparent resin coats the LED chip and the top surface of the lead frame. In addition, the transparent resin is filled in the space between the first lead frame and the second lead frame, and a part of the transparent resin is exposed to the bottom surface of the lead frame. The resin housing is provided over the lead frame. The resin housing includes an upper part coating a top surface of the transparent resin, side-surface parts coating side surfaces of the transparent resin, and an opening through which one of the side surfaces of the transparent resin is exposed. | 2012-06-21 |
20120153336 | DIODE AND PROCESS FOR MAKING AN ORGANIC LIGHT-EMITTING DIODE WITH A SUBSTRATE PLANARISATION LAYER - An organic light-emitting diode (OLED) on a transparent substrate includes a microcavity formed between a reflecting cathode and semi-reflecting anode. The microcavity includes multiple organic layers with at least one light-emitting layer. The OLED is characterized by a transparent planarization layer between the substrate and an upper metallic layer forming the OLED semitransparent anode. A process for making such an OLED is also described. | 2012-06-21 |
20120153337 | LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - The light emitting device package includes a body provided with a cavity, a first lead frame mounted on the body, a second lead frame mounted on the body and separated from the first lead frame, and a light emitting device mounted in the cavity and disposed between the first lead frame and the second lead frame, the light emitting device is formed by sequentially stacking a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, the sequentially stacking direction of the first conductivity-type semiconductor layer, the active layer and the second conductivity-type semiconductor layer is parallel with the bottom surface of the cavity, the first lead frame includes a first connection part electrically connected to the first conductivity-type semiconductor layer, and the second lead frame includes a second connection part electrically connected to the second conductivity-type semiconductor layer. | 2012-06-21 |
20120153338 | SUBSTRATE STRUCTURE AND FABRICATION THEREOF, AND LIGHT EMITTING DIODE DEVICES FABRICATED FROM THE SAME - A substrate structure is described, including a starting substrate, crystal piers on the starting substrate, and a mask layer. The mask layer covers an upper portion of the sidewall of each crystal pier, is connected between the crystal piers at its bottom, and is separated from the starting substrate by an empty space between the crystal piers. An epitaxial substrate structure is also described, which can be formed by growing an epitaxial layer over the above substrate structure form the crystal piers. The crystal piers may be broken after the epitaxial layer is grown. | 2012-06-21 |
20120153339 | LIGHT-EMITTING DIODE CHIP STRUCTURE AND FABRICATION METHOD THEREOF - A light-emitting diode chip structure including a conductive substrate, a semiconductor stacking layer and a patterned seed crystal layer is provided. The conductive substrate has a surface. The surface has a first region and a second region alternately distributed over the surface. The semiconductor stacking layer is disposed on the conductive substrate, and the surface of the conductive substrate faces the semiconductor stacking layer. The patterned seed crystal layer is disposed on the first region of the surface of the conductive substrate and between the conductive substrate and the semiconductor stacking layer. The patterned seed crystal layer separates the semiconductor stacking layer from the first region. The semiconductor stacking layer covers the patterned seed crystal layer and the second region, and is electrically connected to the conductive substrate through the second region. A fabrication method of the light-emitting diode chip structure is also provided. | 2012-06-21 |
20120153340 | SUBMOUNT, OPTICAL MODULE PROVIDED THEREWITH, AND SUBMOUNT MANUFACTURING METHOD - In order to simplify submount manufacture, and increase the manufacturing efficiency thereof, a first electrode layer ( | 2012-06-21 |
20120153341 | Flexible Photovoltaic Cells Having a Polyimide Material Layer and Method of Producing Same - A photovoltaic cell is fabricated onto a polyimide film using an unbalanced RF magnetron sputtering process. The sputtering process includes the addition of 0.05% to 0.5% oxygen to an inert gas stream. Portions of the photovoltaic cell are exposed to an elevated temperature CdCl | 2012-06-21 |
20120153342 | DIE-BONDING MATERIAL FOR OPTICAL SEMICONDUCTOR DEVICES AND OPTICAL SEMICONDUCTOR DEVICE USING SAME - The present invention provides a die bonding material for an optical semiconductor device which has high thermal conductivity and can prevent cracking in an optical semiconductor device including the die bonding material. | 2012-06-21 |
20120153343 | METHODS OF FORMING LIGHT EMITTING DEVICES HAVING CURRENT REDUCING STRUCTURES - A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. A non-transparent feature, such as a wire bond pad, is on the p-type semiconductor layer or on the n-type semiconductor layer opposite the p-type semiconductor layer, and a reduced conductivity region is in the p-type semiconductor layer or the n-type semiconductor layer and is aligned with the non-transparent feature. The reduced conductivity region may extend from a surface of the p-type semiconductor layer opposite the n-type semiconductor layer towards the active region and/or from a surface of the n-type semiconductor layer opposite the p-type semiconductor layer towards the active region. | 2012-06-21 |
20120153344 | METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a semiconductor layer including a first surface, a second surface opposite to the first surface, and a light emitting layer; a p-side electrode provided on the second surface of the semiconductor layer in a region including the light emitting layer; an n-side electrode provided on the second surface of the semiconductor layer in a region not including the light emitting layer; an insulating film being more flexible than the semiconductor layer, the insulating film provided on the second surface and a side surface of the semiconductor layer, and the insulating film having a first opening reaching the p-side electrode and a second opening reaching the n-side electrode; a p-side interconnection layer provided on the insulating film and connected to the p-side electrode; and an n-side interconnection layer provided on the insulating film and connected to the n-side electrode. | 2012-06-21 |
20120153345 | OPTICAL SEMICONDUCTOR DEVICE - The present invention relates to an optical semiconductor device including: a substrate having mounted thereon an LED chip; an encapsulation resin layer embedding the LED chip; an inorganic high-heat conductive layer; and a wavelength conversion layer containing an inorganic phosphor powder, in which the encapsulation resin layer, the inorganic high-heat conductive layer and the wavelength conversion layer are laminated in this order on the substrate either directly or indirectly. | 2012-06-21 |
20120153346 | METHOD FOR PRODUCING RECYCLED SUBSTRATE, RECYCLED SUBSTRATE, NITRIDE SEMICONDUCTOR ELEMENT, AND LAMP - A laminated semiconductor wafer ( | 2012-06-21 |
20120153347 | ESD clamp with auto biasing under high injection conditions - In a dual direction ESD protection circuit formed from multiple base-emitter fingers that include a SiGe base region, and a common sub-collector region, the I-V characteristics are adjusted by including P+ regions to define SCR structures that are operable to sink positive and negative ESD pulses, and adjusting the layout and distances between regions and the number of regions. | 2012-06-21 |
20120153348 | INSULATED GATE BIPOLAR TRANSISTOR AND MANUFACTURING METHOD THEREOF - A trench gate IGBT designed to reduce on-state voltage while maintaining the withstand voltage, including a first drift layer formed on a first main surface of a buffer layer, a second drift layer of the first conductivity type formed on said first drift layer, a base layer of a second conductivity type formed on the second drift layer, an emitter layer of the first conductivity type selectively formed in the surface of the base layer, and a gate electrode buried from the surface of the emitter layer through into the second drift layer with a gate insulating film therebetween, wherein said first drift layer has a structure in which a first layer of the first conductivity type and a second layer of the second conductivity type are repeated in a horizontal direction. | 2012-06-21 |
20120153349 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is a semiconductor device including: a first gate wiring line connected to a gate electrode through an upper surface of the gate electrode that is not covered with a first interlayer insulating film; a second interlayer insulating film formed on the first interlayer insulating film so as to cover a region other than part of an upper surface of the first gate wiring line; and a second gate wiring line connected to the first gate wiring line through the upper surface of the first gate wiring line that is not covered with the second interlayer insulating film, the second gate wiring line having a width larger than a width of the first gate wiring line in plan view. | 2012-06-21 |
20120153350 | SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME - Embodiments of semiconductor devices and methods for fabricating the semiconductor devices are provided. The method includes forming a cavity in a semiconductor region laterally adjacent to a gate electrode structure of a transistor. The gate electrode structure is disposed on a channel region of a first silicon-germanium alloy. A strain-inducing silicon-germanium alloy is formed in the cavity and in contact with the first silicon-germanium alloy. The strain-inducing silicon-germanium alloy includes carbon and has a composition different from the first silicon-germanium alloy. | 2012-06-21 |
20120153351 | Stress modulated group III-V semiconductor device and related method - According to one embodiment, a group III-V semiconductor device comprises a compositionally graded body disposed over a substrate and below a buffer layer supporting an active area of the group III-V semiconductor device. The compositionally graded body includes a first region applying compressive stress to the substrate. The compositionally graded body further includes a stress modulating region over the first region, where the stress modulating region applies tensile stress to the substrate. In one embodiment, a method for fabricating a group III-V semiconductor device comprises providing a substrate for the group III-V semiconductor device and forming a first region of a compositionally graded body over the substrate to apply compressive stress to the substrate. The method further comprises forming a stress modulating region of the compositionally graded body over the first region, where the stress modulating region applies tensile stress to the substrate. | 2012-06-21 |