25th week of 2009 patent applcation highlights part 45 |
Patent application number | Title | Published |
20090155887 | Vaccine Composition - The present invention provides a hyperblebbing non-typeable | 2009-06-18 |
20090155888 | FLUORESCENT PROTEIN - The object of the present invention is to provide a novel fluorescent protein in which on and off of fluorescence thereof can be controlled by irradiation with lights of two different wavelengths. The present invention provides a fluorescent protein shown in the following (a) or (b); | 2009-06-18 |
20090155889 | SYSTEM AND METHOD FOR REGENERATION OF AN ABSORBENT SOLUTION | 2009-06-18 |
20090155890 | Use of non-pathogenic bacteria in their spore or dormant form to remove glycypharus droppings and allergic materials of all sorts of textile - The use and application of non-pathogenic bacteria in their spore or dormant form to remove glycyphagus droppings and other organic allergenic materials of any sorts of textile and in any environment they occur in and characterised by the fact that the non-pathogenic bacteria consume the glycyphagus droppings and organic allergenic materials and use these droppings as food, resulting in a permanent reduction of the droppings and resulting in a significant reduction of the allergen pressure in the areas to be cleaned. | 2009-06-18 |
20090155891 | APPARATUS FOR DETECTING NUCLEIC ACID AMPLIFICATION PRODUCT IN REAL TIME - There is provided an apparatus for detecting a nucleic acid amplification product in real time, which is capable of effectively excluding or reducing apparatus error factors without using a second fluorescence signal used for correction. A plurality of wells | 2009-06-18 |
20090155892 | BIOREACTOR COMPRISING A RETAINING SYSTEM - Disclosed is a bioreactor in which a supporting wall ( | 2009-06-18 |
20090155893 | Methods and Apparatus for Amplification of DNA Using Sonic Energy - Apparatus and methods for amplification of DNA are provided that use sonic energy in place of conventional thermocyclers. In one embodiment, sonic energy is applied to a PCR cocktail to effect dissociation of double stranded DNA into single strands of DNA. A quiescence stage, where no sonic energy is applied, results in amplification of DNA. Repetition of the cycles of application of sonic energy and cessation of application of sonic energy results in DNA amplification. | 2009-06-18 |
20090155894 | Electrokinetic Thermal Cycler and Reactor - Microfluidic devices are disclosed for carrying out cyclic or iterated reactions such as PCR, LDR, and other cyclic or iterated reactions. A microchannel forms a closed loop, through which a reaction mixture may be thermally cycled an arbitrary number of times. Flow is preferably mediated primarily by electrokinetics. Multiple temperature zones may be employed along the course of a single microchannel loop, for example for PCR. Embodiments may be compact, automated, fast, and operable in continuous-flow mode. Real-time reaction monitoring may optionally be used. | 2009-06-18 |
20090155895 | LIQUID-GAS-PHASE EXPOSURE REACTOR FOR CELL CULTURING - Initiation of growth and cultivation of cells can be performed by introducing the cells into culture compartments of a liquid-gas-phase exposure bioreactor containing a supply chamber in which there are disposed hollow-filament membranes having an inside diameter of no larger than 5 mm, wherein an inner volume of said hollow-filament membranes forms the culture compartments. Approximately one half of the supply chamber is filled with a nutrient medium and a remainder is filled with a gas mixture. Perfusion of medium and gas is turned on simultaneously or separately. The hollow-filament membranes and the cells contained therein are cyclically exposed to the gas or liquid phase. | 2009-06-18 |
20090155896 | Human Cancer Suppressor Gene, Protein Encoded Therein, Expression Vector Containing The Same, And Cell Transformed By The Vector - Disclosed are a human cancer suppressor gene, a protein encoded therein, an expression vector containing the same, and a cell transformed by the vector. The gene of the present invention can be used for diagnosing, preventing and treating the human cancers. | 2009-06-18 |
20090155897 | GLYCOPROTEIN VI FUSION PROTEINS - The present invention relates to Glycoprotein VI (GPVI) fusion proteins (GPVI-fusion proteins) comprising a tag like myc, GST, HA, FLAG, STREP but preferably a Immunoglobulin molecule (Ig), more preferably a Fc portion of said Ig and a protein or oligopeptide having the biological activity of GPVI (GPVI-like protein) which is binding to collagen and their use in methods and kits for the screening of potential agonists or antagonists for GPVI-collagen and/or platelet-collagen interaction is disclosed. | 2009-06-18 |
20090155898 | METHOD FOR PRODUCING DENDRITIC CELLS - Disclosed are embryonic stem cell-derived dendritic cells, genetically modified immature dendritic cells capable of maturation, as well as methods for the production of such cells. In one embodiment, the cells made be produced by a method comprising the steps of providing a population of embryonic stem cells; culturing the embryonic stem cells in the presence of a cytokine or combination of cytokines which brings about differentiation of the embryonic stem cells into dendritic cells; and recovering the dendritic cells from the culture. In a further embodiment, the cells may be genetically modified. | 2009-06-18 |
20090155899 | Modified Chimeric Polypeptides with Improved Pharmacokinetic Properties - Modified chimeric polypeptides with improved pharmacokinetics are disclosed. Specifically, modified chimeric Flt1 receptor polypeptides that have been modified in such a way as to improve their pharmacokinetic profile are disclosed. Also disclosed are methods of making and using the modified polypeptides including but not limited to using the modified polypeptides to decrease or inhibit plasma leakage and/or vascular permeability in a mammal. | 2009-06-18 |
20090155900 | CELL CULTURE MATRICES - The present invention relates to cell culture, more specifically to cell culture which may be cell culture such as stem cell culture, embryonic stem cell (ESC) culture and primary cell culture. Disclosed herein are compositions of matter, including without limitation cell matrices, matrix-forming formulations and cell cultures, wherein the cells may be cells such as stem cells, such as ESC, or primary cells, such as keratinocyte and fibroblast cells. Also disclosed herein are articles of manufacture comprising one or more of the compositions of matter of the invention, methods of making and using the compositions of matter and articles of manufacture of the invention, business methods, and tangible media comprising instructions or plans for one or more of the methods and compositions of the invention. | 2009-06-18 |
20090155901 | Mammalian Cell Line Expressing Inducible c-Src - The present invention is directed to a unique mammalian cell line expressing inducible c-Src, and, particularly, a unique human cell line overexpressing c-Src in an inducible manner. | 2009-06-18 |
20090155902 | Manipulation of Cells on a Droplet Actuator - A method of inoculating a culture medium including providing a droplet including a single cell type on a droplet actuator and inoculating a culture medium with the droplet. A method of providing a metabolically useful substance to a cell culture, including providing a droplet actuator including a cell culture droplet loaded thereon, the sample droplet including cells and a cell culture medium, and a second droplet comprising a metabolically useful substance. The method also includes conducting one or more droplet operations to combine the cell culture droplet with the second droplet on the droplet actuator. Related methods, droplet actuators, and systems are also provided. | 2009-06-18 |
20090155903 | PHARMACEUTICAL COMPOSITION AND METHOD - The invention provides compounds, pharmaceutical compositions and methods for the therapeutic treatment and prevention of neurodegenerative disorder and other Aβ | 2009-06-18 |
20090155904 | METHOD OF INHIBITING EXPRESSION OF TARGET MRNA USING SIRNA CONSISTING OF NUCLEOTIDE SEQUENCE COMPLEMENTARY TO SAID TARGET MRNA - A inhibition method of target mRNA expression includes: (a) obtaining binding energy of a double combination section on a dsRNA sequence of all combination comprising complementary nucleotides to a random target mRNA; (b) dividing the binding energy into four sections on the dsRNA sequence of each combination to obtain a difference of the mean binding energy between each section and convert into a score of a relative combination energy pattern; (c) selecting siRNA whose inhibition efficiency to target mRNA is expected to be high by applying the converted score to the dsRNA sequence with other factors that affect the efficiency of siRNA; and (d) inhibiting target mRNA expression using the selected siRNA. As a result, a researcher or an experimenter can analyze patterns of a relative binding energy on base sequences of unknown siRNA without actual experiments to determine whether the siRNA is effective or ineffective rapidly, thereby design and production efficiency of siRNA can be maximized and target mRNA can be effectively inhibited with efficient siRNA to the target mRNA. | 2009-06-18 |
20090155905 | Composition and Method for Increasing Apoptosis in Cancer Cells - Disclosed are cell permeable peptides and peptide agents that inhibit anti-apoptotic processes in cancer cells to promote tumor cell death, as well as a method for providing therapeutic treatment for cancer. The composition may be delivered in conjunction with a conventional chemotherapeutic agent to provide a synergistic effect that significantly increases the effectiveness of the chemotherapeutic agent to destroy cancer cells. The invention also provides kits or systems for cancer therapy, comprising at least one peptide agent for inhibiting the anti-apoptotic effects of NF-kB and at least one chemotherapeutic agent for stimulating the cellular apoptotic pathway. | 2009-06-18 |
20090155906 | CELL DIFFERENTIATION SUPPRESSING AGENT, METHOD OF CULTURING CELLS USING THE SAME, CULTURE SOLUTION, AND CULTURED CELL LINE - The object of the present invention is to provide a differentiation inhibiting agent which allows culture of a stem cell or an embryonic stem cell in an undifferentiated state without use of any feeder cell, a method for culturing using the same, a cell culture liquid using the same, and a cell prepared by culturing using this differentiation inhibiting agent. The present invention provides a differentiation inhibiting agent which comprises a low molecular weight compound, especially a tetrahydroisoquinoline derivative, as an active ingredient; a method for safely culturing a stem cell in large scale in undifferentiated state in the absence of feeder cell which comprises culturing a stem cell by using a tetrahydroisoquinoline derivative; a culture liquid for stem cells comprising a tetrahydroisoquinoline derivative; and a cell which is obtained by culture using a tetrahydroisoquinoline derivative as a differentiation inhibiting agent. | 2009-06-18 |
20090155907 | Removal of Embedding Medium - A method, apparatus and system for automated removal of an embedding medium from an embedded biological sample. The method comprising the steps of: providing an automated sample processing apparatus having an automated process operation capability that causes automated process operation events through robotic sample process functions; providing a clearing solvent, e.g. an organic solvent, capable of lowering the melting point of an embedding medium and/or dissolving an embedding medium; loading a plurality of carriers with embedded biological samples in the automated sample processing apparatus; exposing an embedded biological sample to the clearing solvent, whereby the embedding medium is liquefied; and providing a washing solution capable of removing the clearing solvent and the liquefied embedded medium from said biological sample, said clearing solvent and said washing solution being immiscible. | 2009-06-18 |
20090155908 | BIOREACTOR FOR CELL GROWTH AND ASSOCIATED METHODS - Apparatuses, systems, and methods are provided for growing and maintaining cells. A three-dimensional matrix, such as a hydrogel material, is seeded with cells and placed in a bioreactor having two compartments. The matrix is supported between the two compartments by first and second porous materials, which engage opposing surfaces of the matrix. A first media stream having certain properties is propagated through the first compartment, where it contacts one surface of the matrix via the first porous material. A second media stream having different properties is propagated through the second compartment such that it contacts the opposite surface of the matrix via the second porous material. Through migration of each stream at least partially into the matrix, various controlled gradients may be established within the matrix, encouraging growth of the cells. Such gradients include osmotic pressure, oscillating osmotic pressure, hydrostatic pressure, oxygen tension, and/or nutrient gradients. | 2009-06-18 |
20090155909 | DOWN-REGULATION OF GENE EXPRESSION USING ARTIFICIAL MICRORNAS - Isolated nucleic acid fragments comprising precursor miRNA, and artificial miRNAs and their use in down-regulating gene expression are described. | 2009-06-18 |
20090155910 | DOWN-REGULATION OF GENE EXPRESSION USING ARTIFICIAL MICRORNAS - Isolated nucleic acid fragments comprising precursor miRNAs, and artificial miRNAs and their use in down-regulating gene expression are described. | 2009-06-18 |
20090155911 | Genetically modified plants and their applications in phytoremediation - Genetically modified plants able to accumulate heavy metals in shoots and methods of removing and possibly recovering said heavy metals, using said genetically modified plants. Said genetically modified plants include more than one copy of at least a sequence encoding a P1B-type ATPase of the Zn<2+>/Co<2+>/Cd<2+>/Pb<2+> subclass and that they overexpress said P1B-type ATPase. | 2009-06-18 |
20090155912 | METHOD FOR TRANSFER OF MOLECULAR SUBSTANCES WITH PROKARYONTIC NUCLEIC ACID-BINDING PROTEINS - The invention relates to a method for the transfer of molecular substances, for example proteins or nucleic acids in cells, in the case of using DNA combined with a possible gene expression. A prokaryotic nucleic acid-binding protein is used for the transfer, which is preferably obtained from a thermostable organism. Where the substance to be transferred is a nucleic acid, the protein forms a reversible complex with the nucleic acid. The prokaryotic protein condenses and compacts the nucleic acids. Said nucleic acids can be taken up in the target cells after suitable incubation. | 2009-06-18 |
20090155913 | COMPOSITIONS COMPRISING PROMOTER SEQUENCES AND METHODS OF USE - Nucleic acid molecules, fragments and variants thereof having promoter activity are provided in the current invention. The invention also provides vectors containing a nucleic acid molecule of the invention and cells comprising the vectors. Methods for making and using the nucleic acid molecules of the invention are further provided. | 2009-06-18 |
20090155914 | AUTOMATED SOLUTION MAKER APPARATUS - An automated solution maker is provided. The automated solution maker mixes a chemical with a solvent to a desired concentration. The concentration of the solution is monitored by measuring the conductivity of the solution. Based upon this measurement, the concentration of the solution may be adjusted. | 2009-06-18 |
20090155915 | Biological markers for longevity and diseases and uses thereof - This invention provides methods of using of the sizes and levels of high-density lipoprotein (HDL) and low-density lipoprotein (LDL) particles, the -641 allele of the promoter of the gene encoding apolipoprotein C-3 (APOC-3), the 405 allele of the gene encoding cholesteryl ester transfer protein (CETP), and plasma levels of insulin-like growth factor-1 (IGF-1), adiponectin, CETP and APOC-3, for determining and increasing an individual's likelihood of longevity and of retaining cognitive function during aging, and for determining and decreasing an individual's likelihood of developing a cardiovascular-, metabolic- or age-related disease. | 2009-06-18 |
20090155916 | LIQUID ANALYSER AND METHOD - A liquid analyser has a reactor portion and an associated measurement portion. A sample pump is operable to deliver a liquid sample to a reactor vessel. A base pump supplies a base solution to the reactor vessel. An ozone generator supplies ozone to the reactor vessel. The liquid sample is oxidised in the reactor vessel by means of hydroxyl radicals which are generated using the base solution and ozone to reduce complex components of the liquid sample to their lowest state in solution. The oxidised sample solution is delivered to an optical detector in the measurement portion to determine the concentration of one or more selected materials such as nitrogen, phosphorous or a heavy metal in the oxidised sample solution. | 2009-06-18 |
20090155917 | Method for analyzing nucleobases on a single molecular basis - A method is herein presented for analyzing nucleobases on a single molecular basis (a single molecule detection), which comprises scanning a molecular tip chemically modified with the complementary nucleobase on the nucleobases, and measuring the tunneling currents between the scanned nucleobases and the molecular tips with scanning tunneling microscopy. | 2009-06-18 |
20090155918 | METHOD AND APPARATUS FOR MONITORING BIOMETRICAL DATA - A method and apparatus suitable for monitoring biometrical data (e.g., pH level of a grape) of living organisms is disclosed. A method for monitoring biometrical data includes providing a chemical matter having a chemical agent, contacting the chemical matter with a biological matter, detecting a change in the chemical matter to produce a signal, altering the signal into an electrical signal, and obtaining biometrical data from the electrical signal. An apparatus for determining biometrics data of a living organism includes a capillary tube configured to receive fluid from the living organism, a hydrogel solution having a volume responsive to one or more characteristics of the fluid, a capacitor having at least one plate responsive to the volume of the hydrogel solution, and an inductor coupled to the capacitor. The inductor and the capacitor form a circuit having a resonant frequency. Embodiments of the present invention can advantageously provide a wireless and powerless device for determining biometrics data of living organisms. | 2009-06-18 |
20090155919 | High throughput drug screening method - The present invention uses the small temperature changes from reactions and utilizes them in high throughput screening methods. Briefly, a thermal block containing a series of thermally isolated wells is used so that a reaction can take place in each well without affecting the temperature of any other well. A chemical or biological reaction, such as a binding reaction, is allowed to occur in each well or chamber and the optical properties of the all of the wells are monitored using optical, preferably Kromoscopic, measurements. A determination of temperature in each of the wells from those Kromoscopic measurements can be used to determine if reaction occurred. | 2009-06-18 |
20090155920 | HIGH THROUGHPUT DISSOLUTION AND PRECIPITATION APPARATUS AND METHOD - A dissolution and precipitation system includes an array of reactors. Each reactor has a mother well and a daughter well having a volume between about one microliter and one milliliter. A fluid transfer system is operable to transfer fluid between the mother well and daughter well and purify the fluid that is transferred to the daughter well from the mother well. A method of testing a plurality of samples includes dissolving a plurality of first solids in each of the mother wells to form a plurality of first solutions in the mother wells. The first solutions are purified in the reactors. The first solutions are distributed from the mother wells to one or more daughter wells. A plurality of second solids are precipitated in the daughter wells and the second solids are analyzed. | 2009-06-18 |
20090155921 | METHOD AND APPARATUS FOR READING TEST STRIPS - The present invention provides a method and apparatus for reading test strips such as lateral flow test strips as used for the testing of various chemicals in humans and animals. A compact and portable device is provided that may be battery powered when used remotely from the laboratory and, may store test data until it can be downloaded to another database. Motive power during scanning of the test strip is by means of a spring and damper that is wound by the operator during the insertion of a test strip cassette holder prior to test. | 2009-06-18 |
20090155922 | SCREENING TEST FOR BIODIESEL FUEL - A colorimetric test for determining the presence or absence of biodiesel in a diesel fuel sample. The colorimetric test involves adding concentrated sulfuric acid to a sample of diesel fuel and observing any color change of the sample. A darkening of the diesel fuel sample indicates the presence of biodiesel. The degree to which the color changes after the addition of the sulfuric acid is proportional to the amount of biodiesel in the sample and therefore can be used to determine the amount of biodiesel in the sample. The reagent(s), sample containers and any necessary color scale can be provided in a kit for field testing. | 2009-06-18 |
20090155923 | Photometric Measuring Method for a Sample Liquid, A Photometric Measuring Device, and a Mixing Container for a Photometric Measuring Device - The invention relates to a mixing container ( | 2009-06-18 |
20090155924 | System, method and device for detection of substances on surfaces - A surface wipe for real time detection of trace amounts of toxic substances on surfaces. The wipe includes a collection surface that is swiped across a surface to be tested. The collection media filters dirt and other materials to prevent or reduce inaccurage readings caused by dirt or other foreign matter. A reactive media next to the collecting surface is impregnated with chemicals that react to the toxic substances to create a color change in the reactive media. The color change may be viewed through a clear backing. | 2009-06-18 |
20090155925 | MICROFLUIDIC ELEMENT FOR THOROUGHLY MIXING A LIQUID WITH A REAGENT - A microfluidic element for thoroughly mixing a liquid with a reagent used for the analysis of the liquid for an analyte contained therein and a method thereof are disclosed. The microfluidic element has a substrate and a channel structure. The channel structure includes an elongate mixing channel and an output channel. The mixing channel has an inlet opening and an outlet opening, and is implemented to mix the reagent contained therein with the liquid flowing through the inlet opening into the mixing channel. The outlet opening of the mixing channel is in fluid communication to the output channel. The outlet opening is positioned closer to the middle of the length of the mixing channel than the inlet opening. | 2009-06-18 |
20090155926 | METHOD AND APPARATUS FOR DETECTING TRACE AMOUNTS OF SUBSTANCES - A method and apparatus for detecting trace amounts of a target substance carried by the object, by: applying to the object a flow of air which has been pre-heated, to dislodge substances carried by the object; collecting the heated air after applied to the object; and analyzing the collected heated air for the presence of the target substance. Preferably, a marker substance is introduced into the air before applied to the objects, and the collected heated air is analyzed also for the presence of the marker substance. | 2009-06-18 |
20090155927 | MICROREACTOR AND METHOD OF LIQUID FEEDING MAKING USE OF THE SAME - A microreactor capable of reaction between a sample and a mixed reagent containing a mixture of multiple reagents, which microreactor avoids the interposition of air between driving solution and reagents and realizes high-precision controlling of the timing of mixing of reagents and other liquids, the mixing ratio of liquids, the pressure for liquid feeding, etc. Further, there is provided a method of liquid feeding making use of the same. Accordingly, a flow path branched at the position of an inlet from a flow path through which an opening communicating with an external pump communicates with the inlet is provided with an air evacuation flow path with its terminal open outward. Further, the flow path resistance of the air evacuation flow path for a liquid is made greater than the flow path resistance, for the liquid, of a flow channel from the reagent storage chamber to a reagent feed-out flow path. | 2009-06-18 |
20090155928 | Modulating robo: ligand interactions - Disclosed are methods and compositions for identifying agents which modulate the interaction of Robo and a Robo ligand and for modulating the interaction of Robo and a Robo ligand. The methods for identifying Robo:ligand modulators find particular application in commercial drug screens. These methods generally comprise (1) combining a Robo polypeptide, a Slit polypeptide and a candidate agent under conditions whereby, but for the presence of the agent, the Robo and Slit polypeptides engage in a first interaction, and (2) determining a second interaction of the Robo and Slit polypeptides in the presence of the agent, wherein a difference between the first and second interactions indicates that the aget modulates the interaction of the Robo and Slit polypeptides. The subject methods of modulating the interaction of Robo and a Robo ligand involve combining a Robo polypeptide, a Slit polypeptide and a modulator under conditions whereby, but for the presence of the modulator, the Robo and Slit polypeptides engage in a first interaction, whereby the Robo and Slit polypeptides engage in a second interaction different from the first interaction. In a particular embodiment, the modulator is dominant negative form of the Robo or Slit polypeptide. | 2009-06-18 |
20090155929 | METHODS FOR DETECTION OF HYDROPHOBIC DRUGS - Methods and reagents are disclosed for pretreating a sample suspected of containing a hydrophobic drug for conducting an assay method for detecting the hydrophobic drug. A combination is provided in a medium. The combination comprises (i) the sample, (ii) a releasing agent for releasing the hydrophobic drug and the metabolites from endogenous binding moieties, and (iii) a selective solubility agent that provides for substantially equal solubility of the hydrophobic drug and the metabolites in the medium. The selective solubility agent comprises a water miscible, non-volatile organic solvent and is present in the medium in a concentration sufficient to provide for substantially equal solubility of the hydrophobic drug and the metabolites in the medium. The medium, which may further comprise a hemolytic agent, is incubated under conditions for releasing the hydrophobic drug and the metabolites from endogenous binding moieties. For conducting an assay for the hydrophobic drug, the above pretreatment is performed and to the medium is added reagents for determining the presence and/or amount of the hydrophobic drug in the sample wherein the reagents comprise at least one antibody for the hydrophobic drug. The medium is examined for the presence of a complex comprising the hydrophobic drug and the antibody for the hydrophobic drug, the presence and/or amount of the complex indicating the presence and/or amount of the hydrophobic drug in the sample. | 2009-06-18 |
20090155930 | MONOCLONAL ANTIBODY DS6, TUMOR-ASSOCIATED ANTIGEN CA6, AND METHODS OF USE THEREOF - The present application describes a monoclonal antibody selected from the group consisting of monoclonal antibody DS6, monoclonal antibodies that specifically bind to the antigen or epitope bound by monoclonal antibody DS6, and fragments of the foregoing that specifically bind to the antigen or epitope bound by monoclonal antibody DS6. Methods of use of such antibodies and the isolated antigen bound by such antibodies are also described. | 2009-06-18 |
20090155931 | FERROELECTRIC LAYER WITH DOMAINS STABILIZED BY STRAIN - The present invention describes a method including: providing a substrate; forming an underlying layer over the substrate; heating the substrate; forming a ferroelectric layer over the underlying layer, the ferroelectric layer having a thickness below a critical thickness, the underlying layer having a smaller lattice constant than the ferroelectric layer; cooling the substrate to room temperature; and inducing a compressive strain in the ferroelectric layer. | 2009-06-18 |
20090155932 | METHOD OF MANUFACTURING MAGNETIC FIELD DETECTOR - Disclosed is a method of manufacturing a magnetic field detector having various structures that can be used as a high-density magnetic biosensor. An embodiment of the invention provides a method of manufacturing a magnetic field detector including a magnetoresistive element using a magnetic bead detecting thin film. The method includes: preparing a substrate; depositing the thin film on an upper surface of the substrate; and etching the thin film to form a ring-shaped magnetoresistive element. | 2009-06-18 |
20090155933 | Manufacturing Method of Display Device - To suppress the occurrence of image quality irregularities in a liquid crystal display device having a TFT substrate which is manufactured by performing steps a plurality of times in such a manner that one region is divided into a plurality of exposure regions, and the plurality of exposure regions is exposed. In a manufacturing method of a display device which performs, for a preliminarily determined one region on a surface of an insulation substrate, an exposure/development step including a step of exposing a formed film made of a photosensitive material and a step of developing an exposed film made of the photosensitive material a plurality of times, said each exposure step is performed such that said one region is divided into the plurality of exposure regions by a boundary line which has no overlapping portion and is not aligned with a boundary line between the exposure regions in the exposure step for at least one time out of other exposure steps, and the whole of said one region is exposed by individually exposing the respective exposure regions. | 2009-06-18 |
20090155934 | DEPOSITION APPARATUS AND DEPOSITION METHOD - A deposition apparatus includes: a first electrode for placing a processing object; a second electrode for generating plasma with the first electrode, the second electrode being opposed to the first electrode; and a heat flow control heat transfer part for drawing heat from the processing object to generate a heat flow from a central area to a peripheral area of the processing object. | 2009-06-18 |
20090155935 | BACK SIDE WAFER DICING - Systems and methods for scribing a semiconductor wafer with reduced or no damage or debris to or on individual integrated circuits caused by the scribing process. The semiconductor wafer is scribed from a back side thereof. In one embodiment, the back side of the wafer is scribed following a back side grinding process but prior to removal of back side grinding tape. Thus, debris generated from the scribing process is prevented from being deposited on a top surface of the wafer. To determine the location of dicing lanes or streets relative to the back side of the wafer, the top side of the wafer is illuminated with a light configured to pass through the grinding tape and the wafer. The light is detected from the back side of the wafer, and the streets are mapped relative to the back side. The back side of the wafer is then cut with a saw or laser. | 2009-06-18 |
20090155936 | MODULAR FLOW CELL AND ADJUSTMENT SYSTEM - A combinatorial processing system having modular dispense heads is provided. The modular dispense heads are disposed on a rail system enabling an adjustable pitch of the modular dispense heads for the combinatorial processing. The modular dispense heads are configured so that sections of the modular dispense heads are detachable in order to accommodate various processes through a first section without having to completely disconnect and re-connect facilities to a second section. | 2009-06-18 |
20090155937 | METHOD FOR PACKAGING LED DEVICE - A method for packaging LED device comprises following steps: ( | 2009-06-18 |
20090155938 | LIGHT EMITTING DIODE PACKAGE WITH DIFFUSER AND METHOD OF MANUFACTURING THE SAME - The invention relates to an LED package for facilitating color mixing using a diffuser and a manufacturing method of the same. The LED package includes a substrate with an electrode formed thereon, and an LED chip mounted on the substrate. The LED package also includes an encapsulant applied around the light emitting diode chip, containing a diffuser. The LED package further includes a lens part disposed on the light emitting diode chip and the encapsulant to radiate light in a wide angle. The LED package allows light from the light emitting diode chip to be emitted out of the package without distortion. The invention allows light to exit through the encapsulant containing the diffuser and the lens part, achieving uniform diffusion and emission of light from the LED chip, thereby increasing a radiating angle and obtaining a uniform light source. | 2009-06-18 |
20090155939 | Method of isolating semiconductor laser diodes - Provided is a method of isolating semiconductor laser diodes (LDs), the method including the steps of: preparing a substrate; forming a plurality of semiconductor LDs on the substrate, each semiconductor LD including an n-type semiconductor layer, an active layer, a p-type semiconductor layer, an n-electrode, a ridge portion, and a p-electrode, the ridge portion being formed by etching the p-type semiconductor layer such that a portion of the p-type semiconductor layer protrudes, the p-electrode being formed on the ridge portion; partially forming base cut lines on the surface of the substrate excluding the ridge portions; and isolating the semiconductor LDs into a bar shape along the base cut lines. | 2009-06-18 |
20090155940 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY HAVING THIN FILM TRANSISTOR - A method of manufacturing a thin film transistor having a compound semiconductor with oxygen as a semiconductor layer and a method of manufacturing an organic light emitting display having the thin film transistor include: forming a gate electrode on an insulating substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer including oxygen ions on the gate insulating layer, and including a channel region, a source region, and a drain region; forming a source electrode and a drain electrode to contact the semiconductor layer in the source region and the drain region, respectively; and forming a passivation layer on the semiconductor layer by coating an organic material, wherein a carrier density of the semiconductor layer is maintained in the range of 1E+17 to 1E+18/cm | 2009-06-18 |
20090155941 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING METHOD THEREOF AND THIN FILM FORMING APPARATUS - A method of manufacturing a light emitting device of upward emission type and a thin film forming apparatus used in the method are provided. A plurality of film forming chambers are connected to a first transferring chamber. The plural film forming chambers include a metal material evaporation chamber, an EL layer forming chamber, a sputtering chamber, a CVD chamber, and a sealing chamber. By using this thin film forming apparatus, an upward emission type EL element can be fabricated without exposing the element to the outside air. As a result, a highly reliable light emitting device is obtained. | 2009-06-18 |
20090155942 | HYBRID METAL BONDED VERTICAL CAVITY SURFACE EMITTING LASER AND FABRICATING METHOD THEREOF - Provided is a method of fabricating a vertical cavity surface emitting laser among semiconductor optical devices, comprising: bonding a dielectric mirror layer to an epi-structure having a mirror layer and an active layer; bonding these on a new substrate using a metal bonded method; removing the existing substrate; and fabricating a vertical cavity surface emitting laser on the new substrate. The method of fabricating the vertical cavity surface emitting laser is performed by moving and attaching a vertical cavity surface emitting laser to a new substrate using an external metallic bonding method, without electrically and optically affecting upper and lower mirrors and an active layer that constitutes the vertical cavity surface emitting laser. While using the existing method of fabricating the vertical cavity surface emitting laser, the VCSEL is fabricated by moving to a new substrate having good thermal characteristics so that good heat emission characteristics are accomplished, thus facilitating manufacture of the vertical cavity surface emitting laser having high reliability and good characteristics. | 2009-06-18 |
20090155943 | Luminescent Ceramic Element For A Light Emitting Device - A semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is attached to a compound substrate including a host which provides mechanical support to the device and a ceramic layer including a luminescent material. In some embodiments the compound substrate includes a crystalline seed layer on which the semiconductor structure is grown. The ceramic layer is disposed between the seed layer and the host. In some embodiments, the compound substrate is attached to the semiconductor structure after growth of the structure on a conventional growth substrate. In some embodiments, the compound substrate is spaced apart from the semiconductor structure and does not provide mechanical support to the structure. In some embodiments, the ceramic layer has a thickness less than 500 μm. | 2009-06-18 |
20090155944 | Surface Emitting Laser Device and Production Method - A surface emitting laser device is disclosed that is able to selectively add a sufficiently large loss to a high order transverse mode so as to efficiently suppress a high order transverse mode oscillation and to oscillate at high output in a single fundamental transverse mode. The surface emitting laser device includes a first resonance region that includes an active layer and spacer layers, two distributed Bragg reflectors that sandwich the resonance region, and a current confinement structure that defines a current injection region for the active layer. At least one of the distributed Bragg reflectors includes a second resonance region arranged in the current injection region excluding a predetermined region surrounding a center of the current injection region. | 2009-06-18 |
20090155945 | Method of manufacturing substrate for forming device, and method of manufacturing nitride-based semiconductor laser diode - Provided is a method of manufacturing a semiconductor laser diode. The method includes the steps of: preparing a GaN substrate having an a-plane or m-plane GaN layer formed thereon; forming a plurality of laser diode structures on the GaN layer; etching the GaN substrate such that a cutting reference line is formed in a groove shape along the crystal surface of the a-plane or m-plane, not a main plane; and cutting the GaN substrate along the cutting reference line so as to form a mirror surface of the semiconductor laser diode, the mirror surface coinciding with the crystal surface of the a-plane or m-plane, not the main plane. | 2009-06-18 |
20090155946 | METHOD OF VARYING TRANSMITTANCE OF TRANSPARENT CONDUCTIVE LAYER, FLAT PANEL DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A method of varying a transmittance of a transparent conductive film includes forming the transparent conductive film on a substrate and injecting a high energy source into the transparent conductive film to vary the transmittance of the transparent conductive film. | 2009-06-18 |
20090155947 | METHOD OF GROWING SEMI-POLAR NITRIDE SINGLE CRYSTAL THIN FILM AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE USING THE SAME - A method of growing a semi-polar nitride single crystal thin film. The method includes forming a semi-polar nitride single crystal base layer on an m-plane hexagonal system single crystal substrate, forming a dielectric pattern layer on the semi-polar nitride single crystal base layer, and growing the semi-polar nitride single crystal thin film on the semi-polar nitride single crystal base layer having the dielectric pattern layer in a lateral direction. The growing of the semi-polar nitride single crystal thin film in a lateral direction includes primarily growing the semi-polar nitride single crystal thin film in the lateral direction such that part of a growth plane on the semi-polar nitride single crystal base layer has an a-plane, and secondarily growing the semi-polar nitride single crystal thin film in the lateral direction such that sidewalls of the primarily grown semi-polar nitride single crystal thin film are combined to have a (11 | 2009-06-18 |
20090155948 | METHODS FOR MANUFACTURING CMOS COMPATIBLE BIO-SENSORS - A manufacture method for CMOS sensor, which comprise of steps such as: forming protection layer on a substrate having multiple device structural layers, then using first photo-resist layer as mask for etching to form patterned molecular sensing layer, then forming third photo resist layer and etching protection layer and substrate so as to remove partial substrate underneath the sensor structure. | 2009-06-18 |
20090155949 | MICROELECTRONIC IMAGERS WITH OPTICAL DEVICES AND METHODS OF MANUFACTURING SUCH MICROELECTRONIC IMAGERS - Microelectronic imager assemblies comprising a workpiece including a substrate and a plurality of imaging dies on and/or in the substrate. The substrate includes a front side and a back side, and the imaging dies comprise imaging sensors at the front side of the substrate and external contacts operatively coupled to the image sensors. The microelectronic imager assembly further comprises optics supports superimposed relative to the imaging dies. The optics supports can be directly on the substrate or on a cover over the substrate. Individual optics supports can have (a) an opening aligned with one of the image sensors, and (b) a bearing element at a reference distance from the image sensor. The microelectronic imager assembly can further include optical devices mounted or otherwise carried by the optics supports. | 2009-06-18 |
20090155950 | CMOS IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME - A method for fabricating a CMOS image sensor includes sequentially forming an insulating film, a metal pad and a first passivation film over a semiconductor substrate including photodiodes, forming a planarization layer over the first passivation film, forming color filter layers over the planarization layer, forming an overcoating layer over the semiconductor substrate including the color filter layers, forming micro lenses over the overcoating layer, forming a photoresist film over the semiconductor substrate including the first passivation film and the micro lenses, and then etching the first passivation film using the photoresist film as a mask to expose the metal pad. | 2009-06-18 |
20090155951 | Exponentially Doped Layers In Inverted Metamorphic Multijunction Solar Cells - A method of forming a multijunction solar cell including an upper subcell, a middle subcell, and a lower subcell, including providing first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a grading interlayer over the second subcell, the grading interlayer having a third band gap greater than the second band gap; and forming a third solar subcell over the grading interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mis-matched with respect to the second subcell, wherein at least one of the bases of a solar subcell has an exponentially doped profile. | 2009-06-18 |
20090155952 | Exponentially Doped Layers In Inverted Metamorphic Multijunction Solar Cells - A method of forming a multifunction solar cell including an upper subcell, a middle subcell, and a lower subcell, including providing first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a grading interlayer over the second subcell, the grading interlayer having a third band gap greater than the second band gap; and forming a third solar subcell over the grading interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell, wherein at least one of the bases of a solar subcell has an exponentially doped profile. | 2009-06-18 |
20090155953 | Semiconductor device fabricating method and fabricating apparatus - Respective attracting openings of a bonding head are disposed so as to avoid joining regions at which bump electrodes (obverse electrodes) of a semiconductor chip are joined with bump electrodes of a package substrate. Bump electrodes (reverse electrodes) that are connected to the bump electrodes are provided at a reverse side of the semiconductor chip at positions opposing the bump electrodes. Because the attracting openings do not overlap the joining regions, the bump electrodes (reverse electrodes) are not suctioned at the joining regions. | 2009-06-18 |
20090155954 | THERMAL ENHANCED LOW PROFILE PACKAGE STRUCTURE AND METHOD FOR FABRICATING THE SAME - A thermal enhanced low profile package structure and a method for fabricating the same are provided. The package structure typically includes a metallization layer with an electronic component thereon which is between two provided dielectric layers. The metallization layer as well as the electronic component is embedded and packaged while the substrates are laminated via a lamination process. The fabricated package structure performs not only a superior electric performance, but also an excellent enhancement in thermal dissipation. | 2009-06-18 |
20090155955 | THERMAL MECHANICAL FLIP CHIP DIE BONDING - A thermal mechanical process for bonding a flip chip die to a substrate. The flip chip die includes a plurality of copper pillar bumps, each copper pillar bump of the plurality of copper pillar bumps having a copper portion attached to the die and a bonding cap attached to the copper portion. The process includes positioning the die on the substrate such that the bonding cap of each copper pillar bump of the plurality of copper pillar bumps contacts a corresponding respective one of a plurality of bonding pads on the substrate, and thermosonically bonding the die to the substrate. | 2009-06-18 |
20090155956 | SEMICONDUCTOR DEVICE - A semiconductor device and method. One embodiment provides an encapsulation plate defining a first main surface and a second main surface opposite to the first main surface. The encapsulation plate includes multiple semiconductor chips. An electrically conductive layer is applied to the first and second main surface of the encapsulation plate at the same time. | 2009-06-18 |
20090155957 | Multi-Die Wafer Level Packaging - A semiconductor die package is provided. The semiconductor die package includes a plurality of dies arranged in a stacked configuration. Through-silicon vias are formed in the lower or intermediate dies to allow electrical connections to dies stacked above. The lower die is positioned face up and has redistribution lines electrically coupling underlying semiconductor components to the through-silicon vias. The dies stacked above the lower die may be oriented face up such that the contact pads are facing away from the lower die or flipped such that the contact pads are facing the lower die. The stacked dies may be electrically coupled to the redistribution lines via wire bonding or solder balls. Additionally, the lower die may have another set of redistribution lines on an opposing side from the stacked dies to reroute the vias to a different pin-out configuration. | 2009-06-18 |
20090155958 | ROBUST DIE BONDING PROCESS FOR LED DIES - Systems and methods are provided to mitigate excess die attachment material accrual, and parasitic conductive paths formed thereby. A die attachment material (e.g., solder) is melted using a combination of localized heat sources and ultrasonic energy. The heat sources bring the die attachment material close to its melting point, which reduces an amount of bonding force associated with purely ultrasonic bonding techniques. An ultrasonic transducer brings the die attachment material the rest of the way up to its melting point, which reduces the overall temperature that the die and/or sensitive components thereon endure during the bonding process. | 2009-06-18 |
20090155959 | Semiconductor Device and Method of Forming Integrated Passive Device Module - A method of manufacturing a semiconductor device includes providing a substrate with an insulation layer disposed on a top surface of the substrate, forming a passive device over the top surface of the substrate, removing the substrate, depositing an insulating polymer film layer over the insulation layer, and depositing a metal layer over the insulating polymer film layer. A solder mask can be formed over the metal layer. A conformal metal layer can then be formed over the solder mask. A notch can be formed in the insulation layer to enhance the connection between the insulating polymer film layer and the insulation layer. Additional semiconductor die can be electrically connected to the passive device. The substrate is removed by removing a first amount of the substrate using a back grind process, and then removing a second amount of the substrate using a wet dry, dry etch, or chemical-mechanical planarization process. | 2009-06-18 |
20090155960 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH OFFSET STACKING AND ANTI-FLASH STRUCTURE - An integrated circuit package system includes: mounting a device structure in an offset location over a carrier with the device structure having a bond pad and a contact pad; connecting an electrical interconnect between the bond pad and the carrier; forming an anti-flash structure over the device structure with the anti-flash structure exposing the contact pad; and forming a package encapsulation adjacent to the anti-flash structure and over the carrier. | 2009-06-18 |
20090155961 | INTEGRATED CIRCUIT PACKAGE SYSTEM WITH PACKAGE INTEGRATION - An integrated circuit package system comprising: providing a base substrate; attaching a base integrated circuit die over the base substrate; forming a support over the base substrate near only one edge of the base substrate; and attaching a stack substrate over the support and the base integrated circuit die. | 2009-06-18 |
20090155962 | Method for fabricating pitch-doubling pillar structures - A method of making a semiconductor device includes forming at least one device layer over a substrate, forming at least two spaced apart features over the at least one device layer, forming sidewall spacers on the at least two features, filling a space between a first sidewall spacer on a first feature and a second sidewall spacer on a second feature with a filler feature, selectively removing the sidewall spacers to leave the first feature, the filler feature and the second feature spaced apart from each other, and etching the at least one device layer using the first feature, the filler feature and the second feature as a mask. | 2009-06-18 |
20090155963 | FORMING THIN FILM TRANSISTORS USING ABLATIVE FILMS - An ablative film arranged in a stack having a flexible substrate disposed in the stack; an active layer, disposed in the stack, including at least a semiconductor material; and at least one ablative layer, disposed in the stack over the active layer, that is removable by image wise exposure to radiation from the top side of the stack. | 2009-06-18 |
20090155964 | METHODS FOR FABRICATING AN ELECTRONIC DEVICE - A method for fabricating an electronic device is provided. The method for fabricating the electrical device comprises providing a substrate. A patterned first self-assembled monolayer (SAM) and an adjacent patterned second SAM are formed on the substrate, wherein the patterned first SAM has a higher affinity then that of the patterned second SAM. A conductive, semiconductor or insulating material is dissolved or suspended in a solvent to form a solution. The solution is coated on the substrate. The solvent in the solution is removed to selectively form a patterned conductive, semiconductor or insulating layer on the patterned first SAM. | 2009-06-18 |
20090155965 | METHOD OF FABRICATING A NON-FLOATING BODY DEVICE WITH ENHANCED PERFORMANCE - Provided is a method that includes forming a first semiconductor layer on a semiconductor substrate, growing a second semiconductor layer on the first semiconductor layer, forming composite shapes on the first semiconductor layer, each composite shape comprising of an overlying oxide-resistant shape and an underlying second semiconductor shape, with portions of the first semiconductor layer exposed between the composite shapes, forming spacers on sides of the composite shapes, forming buried silicon oxide regions in exposed top portions of the first semiconductor layer, and in portions of the first semiconductor layer located underlying second semiconductor shapes, selectively removing the oxide-resistant shapes and spacers resulting in the second semiconductor shapes, and forming a semiconductor device in a second semiconductor shape wherein a first portion of the semiconductor device overlays the first semiconductor layer and wherein second portions of the semiconductor device overlays a buried silicon oxide region. | 2009-06-18 |
20090155966 | DRAM WITH NANOFIN TRANSISTORS - One aspect of the present subject matter relates to a memory. A memory embodiment includes a nanofin transistor having a first source/drain region, a second source/drain region above the first source/drain region, and a vertically-oriented channel region between the first and second source/drain regions. The nanofin transistor also has a surrounding gate insulator around the nanofin structure and a surrounding gate surrounding the channel region and separated from the nanofin channel by the surrounding gate insulator. The memory includes a data-bit line connected to the first source/drain region, at least one word line connected to the surrounding gate of the nanofin transistor, and a stacked capacitor above the nanofin transistor and connected between the second source/drain region and a reference potential. Other aspects are provided herein. | 2009-06-18 |
20090155967 | METHOD OF FORMING MEMORY WITH FLOATING GATES INCLUDING SELF-ALIGNED METAL NANODOTS USING A COUPLING LAYER - Techniques are provided for fabricating memory with metal nanodots as charge-storing elements. In an example approach, a coupling layer such as an amino functional silane group is provided on a gate oxide layer on a substrate. The substrate is dip coated in a colloidal solution having metal nanodots, causing the nanodots to attach to sites in the coupling layer. The coupling layer is then dissolved such as by rinsing or nitrogen blow drying, leaving the nanodots on the gate oxide layer. The nanodots react with the coupling layer and become negatively charged and arranged in a uniform monolayer, repelling a deposition of an additional monolayer of nanodots. In a configuration using a control gate over a high-k dielectric floating gate which includes the nanodots, the control gates may be separated by etching while the floating gate dielectric extends uninterrupted since the nanodots are electrically isolated from one another. | 2009-06-18 |
20090155968 | METHOD OF FORMING A DIELECTRIC LAYER PATTERN AND METHOD OF MANUFACTURING A NON-VOLATILE MEMORY DEVICE USING THE SAME - In a method of forming a dielectric layer pattern, lower patterns are formed on a substrate. A first dielectric layer is formed on sidewalls and upper surfaces of the lower patterns and a surface of the substrate. A mask pattern is formed on the first dielectric layer to partially expose the first dielectric layer. The exposed first dielectric layer on upper surfaces and upper sidewalls of the lower patterns is partially removed and the removed first dielectric layer is deposited on surfaces of the first dielectric layer between the lower patterns, to form a second dielectric layer having a thickness greater than that of the first dielectric layer. The second dielectric layer on the sidewalls of the lower patterns and the substrate is etched to form a dielectric layer pattern. Accordingly, damage to the underlying layer may be reduced, and an unnecessary dielectric layer may be completely removed. | 2009-06-18 |
20090155969 | PROTECTION OF SIGE DURING ETCH AND CLEAN OPERATIONS - A method of making a semiconductor device includes forming a transistor structure having one of an embedded epitaxial stressed material in a source and drain region and a stressed channel and well, subjecting the transistor structure to plasma oxidation, and removing spacer material from the transistor structure. | 2009-06-18 |
20090155970 | ENHANCED MULTI-BIT NON-VOLATILE MEMORY DEVICE WITH RESONANT TUNNEL BARRIER - A non-volatile memory cell uses a resonant tunnel barrier that has an amorphous silicon and/or amorphous germanium layer between two layers of either HfSiON or LaAlO | 2009-06-18 |
20090155971 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - In a semiconductor device and a method of manufacturing the same, a conductive structure is formed on an active region defined by a device isolation layer on a semiconductor substrate. The conductive structure includes a gate pattern and source/drain regions adjacent to the gate pattern. A first semiconductor layer is formed on the active region by a selective epitaxial growth (SEG) process. An amorphous layer is formed on the first semiconductor layer. A second semiconductor layer is formed from a portion of the amorphous layer by a solid-phase epitaxy (SPE) process. Elevated structures are formed on the source/drain regions by removing a remaining portion of the amorphous layer from the substrate so the elevated structure includes the first semiconductor layer and the second semiconductor layer stacked on the first semiconductor layer. The device isolation layer may be prevented from being covered with the elevated structures, to thereby prevent contact failures. | 2009-06-18 |
20090155972 | Method of producing semiconductor memory - A semiconductor memory includes a plurality of memory cell transistors each having a laminated gate. A method of producing the semiconductor memory includes the steps of: forming a plurality of element separation regions for separating the memory cell transistors; forming a first conductive layer through a gate oxide film; etching the first conductive layer to form a plurality of slits; forming spacers on sidewall portions of each of the slits; forming a second conductive layer through an insulating film; etching the first conductive layer, the second conductive layer, and the insulating film using one single mask to form the laminated gate; implanting a conductive impurity into the semiconductor substrate exposed on both sides of the laminated gate to form a drain/source region; forming an interlayer insulating film; forming a contact hole penetrating the interlayer insulating film to reach the semiconductor substrate. | 2009-06-18 |
20090155973 | SEMICONDUCTOR DEVICE HAVING MOSFET WITH OFFSET-SPACER, AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a gate insulating film which is formed on the major surface of a semiconductor substrate, a gate electrode which is formed on the gate insulating film, a first offset-spacer which is formed in contact with one side surface of the gate electrode, a first spacer which is formed in contact with the other side surface of the gate electrode, a second spacer which is formed in contact with the first offset-spacer, and source and drain regions which are formed apart from each other in the major surface of the semiconductor substrate below the first and second spacers so as to sandwich the gate electrode and the first offset-spacer. The source region is formed at a position deeper than the drain region. The dopant concentration of the source region is higher than that of the drain region. | 2009-06-18 |
20090155974 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A CHANNEL EXTENDING VERTICALLY - In a semiconductor device and a method of manufacturing the semiconductor device, the semiconductor device includes a conductive structure, first insulating layers and first conductive layer patterns. The conductive structure includes a first portion, second portions and third portions. The second portions extend in a first direction on the first portion. The second portions are spaced apart from one another in a second direction substantially perpendicular to the first direction. The third portions are provided on the second portions. The third portions are spaced apart from one another in the first and second directions. The first insulating layers cover sidewalls of the second portions. The first conductive layer patterns are provided on the first insulating layers. | 2009-06-18 |
20090155975 | METHOD FOR MANUFACTURING METAL-INSULATOR-METAL CAPACITOR OF SEMICONDUCTOR DEVICE - A method for manufacturing a metal-insulator-metal capacitor of a semiconductor device method for manufacturing a semiconductor device. In one example embodiment, a method for manufacturing a semiconductor device includes various steps. First, a logic metal and a capacitor lower metal is formed on a first insulating film that is formed on a semiconductor substrate. Next, a portion of the capacitor lower metal is selectively etched to a predetermined depth. Then, a second insulating film is formed over an entire upper surface of the logic metal, the first insulating film, and the capacitor lower metal. Next, a capacitor upper metal is formed on the second insulating film in a region corresponding to the etched portion of the capacitor lower metal. Finally, a third insulating film is formed on an entire upper surface of the second insulating film and the capacitor upper metal. | 2009-06-18 |
20090155976 | ATOMIC LAYER DEPOSITION OF DY-DOPED HFO2 FILMS AS GATE DIELECTRICS - The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium oxide (HfO | 2009-06-18 |
20090155977 | Methods for Forming a Gate and a Shallow Trench Isolation Region and for Planarizating an Etched Surface of Silicon Substrate - There is provide a method for forming a gate, which can improve the etching uniformity of the sidewalls of the gate, including the following steps: forming a dielectric layer on a semiconductor substrate; forming a polysilicon layer on the dielectric layer; etching the polysilicon layer; performing an isotropic plasma etching process on the etched polysilicon layer by using a mixed gases containing a fluorine-based gas and oxygen gas; and cleaning the semiconductor substrate subjected to the isotropic plasma etching process, thereby forming a gate. there are also provided a method for forming a shallow trench isolation region, which can improve the filling quality of a subsequent spacer and the electrical properties of the resultant shallow trench isolation region by improving the etching uniformity of sidewalls and bottom surface of the shallow trench, and a method for planarizating an etched surface of silicon substrate, which can improve the etching uniformity of the surface of silicon substrate. | 2009-06-18 |
20090155978 | Recessed Shallow Trench Isolation - In some embodiments, a memory integrated circuit has different shallow trench isolation structures in the memory circuitry of the memory integrated circuit and the control circuitry of the memory integrated circuit. The isolation dielectric fills the trenches of the shallow trench isolation structures to different degrees. | 2009-06-18 |
20090155979 | Method of manufacturing a semiconductor device - In a semiconductor device and a method of manufacturing the same, a first insulation layer is removed from a cell area of a substrate and a first active pattern is formed on the first area by a laser-induced epitaxial growth (LEG) process. Residuals of the first insulation layer are passively formed into a first device isolation pattern on the first area. The first insulation layer is removed from the second area of the substrate and a semiconductor layer is formed on the second area of the substrate by a SEG process. The semiconductor layer on the second area is patterned into a second active pattern including a recessed portion and a second insulation pattern in the recessed portion is formed into a second device isolation pattern on the second area. Accordingly, grain defects in the LEG process and lattice defects in the SEG process are mitigated or eliminated. | 2009-06-18 |
20090155980 | Methods of Forming Trench Isolation and Methods of Forming Floating Gate Transistors - A method of forming trench isolation includes etching first trench lines into semiconductive material of a semiconductor substrate. First isolation material is formed within the first trench lines within the semiconductive material. After forming the first isolation material within the first trench lines, second trench lines are etched into semiconductive material of the substrate between the first trench lines such that the first trench lines and second trench lines alternate. Second isolation material is formed within the second trench lines within the semiconductive material. Alternate and additional aspects are contemplated. | 2009-06-18 |
20090155981 | METHOD AND APPARATUS FOR SINGULATING INTEGRATED CIRCUIT CHIPS - A method of singulating integrated circuit chips. The method includes forming, from a bottom surface of a substrate, trenches part way through the substrate in the kerf regions surrounding integrated circuit regions previously formed in the substrate; placing a top surface of the substrate on a singulation fixture having compartments, the walls of the compartments fitting into the trenches in the substrate; and thinning the bottom surface of the substrate until the individual integrated circuit regions are singulated into individual integrated circuit chips. | 2009-06-18 |
20090155982 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR FORMATION REGIONS OF DIFFERENT PLANAR SIZES - A wafer process material is prepared which has a plurality of semiconductor formation regions of different planar sizes, each including a low dielectric constant film/wiring line stack structure component. A laser beam is applied onto a dicing street of the necessary semiconductor formation region and onto its straight extension in order to remove partial areas of the low dielectric constant film/wiring line stack structure components of the necessary semiconductor formation region and the unnecessary semiconductor formation region so that first groove and the second groove are formed. A protective film is formed in the second groove formed in the unnecessary semiconductor formation region and on the low dielectric constant film/wiring line stack structure component. An upper wiring line and a sealing film are formed on the protective film, and a semiconductor wafer is cut along the dicing street. | 2009-06-18 |
20090155983 | INHIBITION OF METAL DIFFUSION ARISING FROM LASER DICING - Method of inhibiting metal diffusion arising from laser dicing is provided. The method includes dividing a wafer into at least one chip. The chip includes internal metallic features. The dividing deposits at least one metallic substance on the outer surface of the chip. After so dividing the chip, the method exposes the chip to a heated ambient environment having a given pressure (e.g., less than one atmosphere). The environment includes a chemical agent capable of bonding with the metallic substance. Additionally, wet chemical etch may be performed on the chip. | 2009-06-18 |
20090155984 | Backside protection film, method of forming the same and method of manufacturing a semiconductor package using the same - A method of forming a backside protection film includes forming a first coating layer on a first heterogeneous film, the first coating layer being at a C-stage state, forming a second coating layer on a second heterogeneous film, the second coating layer being at a B-stage state, separating the first coating layer from the first heterogeneous film, and attaching the first coating layer to the second coating layer, the second coating layer being between the second heterogeneous film and the first coating layer, and each of the first and second heterogeneous films being formed by coating a first material layer with a second material. | 2009-06-18 |
20090155985 | Inhibition of Metal Diffusion Arising from Laser Dicing - A method divides a wafer into at least one chip. The chip includes internal metallic features. The dividing deposits at least one metallic substance on the outer surface of the chip. After so dividing the chip, the process exposes the chip to a heated ambient environment having a given pressure (e.g., less than one atmosphere). The environment comprises a chemical agent capable of bonding with the metallic substance. Additionally, wet chemical etch can be performed on the chip. | 2009-06-18 |
20090155986 | METHOD FOR MANUFACTURING GALLIUM NITRIDE SINGLE CRYSTALLINE SUBSTRATE USING SELF-SPLIT - The present invention relates to a method for manufacturing a gallium nitride single crystalline substrate, including (a) growing a gallium nitride film on a flat base substrate made of a material having a smaller coefficient of thermal expansion than gallium nitride and cooling the gallium nitride film to bend convex upwards the base substrate and the gallium nitride film and create cracks in the gallium nitride film; (b) growing a gallium nitride single crystalline layer on the crack-created gallium nitride film located on the convex upward base substrate; and (c) cooling a resultant product having the grown gallium nitride single crystalline layer to make the convex upward resultant product flat or bend convex downwards the convex upward resultant product and at the same time to self-split the base substrate and the gallium nitride single crystalline layer from each other at the crack-created gallium nitride film interposed therebetween. | 2009-06-18 |