25th week of 2009 patent applcation highlights part 11 |
Patent application number | Title | Published |
20090152486 | PRESSURE ADJUSTING VALVE FOR VEHICLE FUEL LINE - A pressure adjusting valve for a vehicle fuel line includes a diaphragm disposed in a housing and dividing the interior of the housing into first and second compartments. A valve plate is provided in the second compartment and attached to the diaphragm. A return unit is provided in the second compartment. An elastic member provides an elastic force to the diaphragm toward the second compartment. An elastic force adjusting unit controls the elastic force of the elastic member. | 2009-06-18 |
20090152487 | Quick actuator - An actuator designed to open and close valves easier. Preferably metal, a user can engage the actuator by either a rotating means or manually by hand. Thereby making it possible to engage a stuck actuator in the event of an emergency. Its unique star patterned sleeve makes it impossible easily possible. Simply by slipping and impact gun's socket over the star patterned sleeve and engaging the impact. It's designed mainly for underwater use in the ocean, where salt water corrodes and jams virtually everything it comes in contact with. Thus will help in the prevention of a major oil spill or natural gas leak. | 2009-06-18 |
20090152488 | Elastomer Blend - The use of a sulphur-free and low-emission elastomer blend which has properties of various rubbers, and the mechanical properties thereof are improved, in particular, in relation to the permanent set (DVR), elongation at rupture, tensile strength and/or gas permeability (permeation) in relation to the individual compounds, and it also has an improved temperature resistance and an improved resistance to media. The elastomer blend also includes a rubber having at least two functional groups which can be cross-linked by hydrosilylation, at least one other rubber comprising at least two functional groups which can be cross-linked by hydrosilylation. The rubber is chemically different from the rubber and a cross-linking agent includes a hydrosiloxane or hydrosiloxane derivative or a mixture of several hydrosiloxanes or derivatives, which include at least two SiH groups per molecule in the centre, a hydrosilylation catalyst system and at least one filling material. | 2009-06-18 |
20090152489 | Composition for producing soft magnetic composites by powder metallurgy - The invention concerns powder compositions consisting of electrically insulated particles of a soft magnetic material of an iron or iron-based powder and 0.1-2% by weight of a lubricant selected from the group consisting of fatty acid amides having 14-22 C atoms. Optionally a thermoplastic binder such as polyphenylene sulphide may be included in the composition. The invention also concerns a method for the preparation of soft magnetic composite components. | 2009-06-18 |
20090152490 | GLYCERIN COATED ICE MELTER - Solid ice melters are improved with a small exterior coating of glycerin which prevents caking and bridging and enhances melt value. | 2009-06-18 |
20090152491 | Thermally conductive resin compositions - Thermally conductive polymer resin compositions comprising polymer, spherical or granular shape thermally conductive filler, and platy thermally conductive filler, and optionally a polymeric toughening agent. The compositions are particularly useful for metal/polymer hybrid parts. | 2009-06-18 |
20090152492 | THERMOELECTRIC MATERIAL AND PROCESS OF PRODUCING THE SAME - A p or n type thermoelectric material containing, as constituent elements, at least one of Bi and Sb and at least one of Te and Se. The n type one may further contain at least one element selected from I, Cl, Hg, Br, Ag, and Cu. The thermoelectric material has a sea-island microstructure, in which the sea phase is crystal grains having an average grain size of 5 μm or smaller with their c-axes aligned unidirectionally, and the island phase is elongated crystal gains with an average length of | 2009-06-18 |
20090152493 | Method For Preparing Cellulose-Based Film and Cellulose-Based Film - Disclosed herein is a method for preparing a cellulose-based film from raw material pulp, the method including the steps of: preparing a dope from a composition comprising 5-15 wt % of a pulp having an alpha-cellulose content of more than 90% and 85-95 wt % of an aqueous N-methylmorpholine-N-oxide solution; extruding the dope from a die onto a running support; casting the extrudate to form a sheet-shaped material; washing the cast sheet with water to remove N-methylmorpholine-N-oxide therefrom; and drying the washed sheet. The method enables the cellulose-based film to be prepared from environmentally friendly wood pulp through an environmentally friendly process. | 2009-06-18 |
20090152494 | THREE-BAND PHOSPHOR FOR MULTI-LAYER AGRICULTURAL PLASTIC FILM - A blue-green-red three-band phosphor for multilayer agricultural plastic film for converting near ultraviolet light in photosynthetic active radiation is disclosed. The substrate of the phosphor is prepared from the group IIA element SiO | 2009-06-18 |
20090152495 | HIGH-BRIGHTNESS YELLOW-ORANGE YELLOW PHOSPHOR FOR WARM WHITE LED - A high-brightness yellow-orange yellow phosphor for use in warm white LED (light emitting diode), the high-brightness yellow-orange yellow phosphor comprises a substrate based on a rare-earth garnet and cerium for activating said substrate. The high-brightness yellow-orange yellow phosphor has the substances of Li | 2009-06-18 |
20090152496 | COPPER-ALKALINE-EARTH-SILICATE MIXED CRYSTAL PHOSPHORS - This invention relates to luminescent materials for ultraviolet light or visible light excitation comprising copper-alkaline-earth dominated inorganic mixed crystals activated by rare earth elements. The luminescent material is composed of one or more than one compounds of silicate type and/or germinate or germanate-silicate type. Accordingly, the present invention is a very good possibility to substitute earth alkaline ions by copper for a shifting of the emission bands to longer or shorter wavelength, respectively. Luminescent compounds containing Copper with improved luminescent properties and also with improved stability against water, humidity as well as other polar solvents are provided. The present invention is to provide copper containing luminescent compounds, which has high correlated color temperature range from about 2,000K to 8,000K or 10,000K and CRI up to over 90. | 2009-06-18 |
20090152497 | PERSISTENT PHOSPHOR - A long-lived phosphor composition is provided, along with methods for making and using the composition. More specifically, in one embodiment, the phosphor comprises a material having a formula of A | 2009-06-18 |
20090152498 | LUMINOUS MATERIALS - A luminous material comprising a rubber, glass or plastics material matrix. A luminescent material is dispersed throughout the matrix, and a colorant dispersed throughout the matrix. The colourant gives the matrix a colour when it is observed under substantially white light, and the colourant allowing substantial transmission of light emitted by the luminous material. | 2009-06-18 |
20090152499 | Method for the production of olefins and synthesis gas - Methods comprising: (a) providing a starting mixture comprising at least one hydrocarbon and at least one oxygen source, wherein the starting mixture has a fuel number of at least 4; (b) heating the starting mixture to a temperature of not more than 1400° C. and subjecting it to a single-stage, autothermal, uncatalyzed reaction to form a reaction gas; and (c) subjecting the reaction gas to rapid cooling to form at least one olefin and synthesis gas are described. | 2009-06-18 |
20090152500 | Iron-Based Water Gas Shift Catalyst - The present development is a catalyst for use in water gas shift processes, a method for making the catalyst and a method of using the catalyst. The catalyst is composed of iron oxide, copper oxide, zinc oxide, alumina, and optionally, potassium oxide, and is produced using a hydrothermal synthesis process. The catalyst demonstrates surprising activity for conversion of carbon monoxide under high to moderate temperature shift reaction conditions. | 2009-06-18 |
20090152501 | Process and device for removal of exhaust gases - The invention relates to a process as well as a device for removal of exhaust gas ( | 2009-06-18 |
20090152502 | Lipophilic Antioxidant - The present invention relates to a composition containing a first component selected from the group consisting of at least one polyphenol, at least one phenolic diterpene and mixtures of both, at least one glyceride, at least one hydrophilic emulsifier and at least one hydrophobic emulsifier, and also to the use of this mixture as lipophilic antioxidant. | 2009-06-18 |
20090152503 | Conductive Material, Conductive Film, and Production Method Thereof - There are provided a conductive material obtained by bringing a π conjugated polymer into contact with an ionic liquid and a conductive film obtained by bringing a π conjugated polymer film into contact with the ionic liquid. Method of producing them is provided. | 2009-06-18 |
20090152504 | Latent Curing Agent - An aluminum chelate-based latent curing agent is provided which can cure a thermosetting epoxy resin at a relatively low temperature in a short period of time. A method for producing such an aluminum chelate-based latent curing agent, whose curing conditions can be relatively easily controlled, is also provided. The aluminum chelate-based latent curing agent is made latent by reacting a silsesquioxane-type oxetane derivative with an aluminum chelating agent in the presence of an alicyclic epoxy compound. | 2009-06-18 |
20090152505 | Adhesive composition and anisotropic conductive film using the same - An adhesive composition includes an ethylene-vinyl acetate copolymer, a copolymer of an aliphatic heterocyclic compound and a monomer having an aromatic ring, a binder resin, a radical polymerizable material, and a radical initiator. | 2009-06-18 |
20090152506 | PROCESS FOR PRODUCING ORIENTED INORGANIC CRYSTALLINE FILM, AND SEMICONDUCTOR DEVICE USING THE ORIENTED INORGANIC CRYSTALLINE FILM - In a process for producing an oriented inorganic crystalline film, a non-monocrystalline film containing inorganic crystalline particles is formed on a substrate by a liquid phase technique using a raw-material solution which contains a raw material and an organic solvent, where the inorganic crystalline particles have a layered crystal structure and are contained in the raw material. Then, the non-monocrystalline film is crystallized by heating the non-monocrystalline film to a temperature equal to or higher than the crystallization temperature of the non-monocrystalline film so that part of the inorganic crystalline particles act as crystal nuclei. | 2009-06-18 |
20090152507 | PROCESSES FOR MAKING TITANIUM PRODUCTION ANODES - The present invention relates to processes for making anodes suitable for use in the production of titanium metals. The processes use a kneaded mixture of TiO | 2009-06-18 |
20090152508 | CONDUCTIVE COATING MATERIAL - The disclosed is a conductive coating material which includes an organic binder component and carbon fibrous structures, wherein the carbon fibrous structure comprises a three dimensional network of carbon fibers each having an outside diameter of 15-100 nm, wherein the carbon fibrous structure further comprises a granular part with which the carbon fibers are tied together in the state that the concerned carbon fibers are externally elongated therefrom, and wherein the granular part is produced in a growth process of the carbon fibers; and wherein the carbon fibrous structures are contained at a rate of 0.01-50% by weight based on the total weight of the coating material. The conductive coating material gives a coated film which shows a high electrical conductivity and a good film strength, and also coordinates its color as an intended one easily. | 2009-06-18 |
20090152509 | INKJET PRINTABLE ELECTRODE COMPOSITION, ELECTRODE INCLUDING THE SAME, AND SECONDARY BATTERY INCLUDING THE ELECTRODE - An inkjet printable electrode composition, an electrode including the electrode composition, and a secondary battery including the electrode. The inkjet printable electrode composition includes oxide, a conducting agent, a wetting agent, a binder and an aqueous solvent, in which the viscosity of the binder is in a range of 2 to 20 cps in a 1 wt % aqueous solution of the binder. The inkjet printing electrode composition includes a binder having an appropriate viscosity to allow ink to be easily ejected when the ink is inkjet-printed, and thus, a uniform, thin, and planarized pattern may be formed onto a collector by inkjet printing, without clogging of a nozzle, and thus electrode and secondary battery may be formed at low costs. | 2009-06-18 |
20090152510 | ELECTRODE MATERIAL FOR A POLARIZED ELECTRODE - The present invention provides polarized electrodes that ensure a satisfactory packing ratio of activated carbon particles and conductive particulates and favorable contact between these and an electrolyte, and demonstrate high capacitance. The present invention relates to the following electrode materials for polarized electrodes:
| 2009-06-18 |
20090152511 | INDIUM TIN OXIDE TARGET, METHOD FOR MANUFACTURING THE SAME, TRANSPARENT CONDUCTIVE FILM OF INDIUM TIN OXIDE, AND METHOD FOR MANUFACTURING TRANSPARENT CONDUCTIVE FILM OF INDIUM TIN OXIDE - Disclosed are an indium Tin Oxide (ITO) target, a method for manufacturing the same, a transparent conductive film of ITO, and a method for manufacturing the transparent conductive film of ITO. The ITO target includes at least one oxide selected from the group consisting of Sm | 2009-06-18 |
20090152512 | NOVEL COCRYSTALLINE METALLIC COMPOUNDS AND ELECTROCHEMICAL REDOX ACTIVE MATERIAL EMPLOYING THE SAME - The present invention includes an electrochemical redox active material. The electrochemical redox active material includes a cocrystalline metallic compound having a general formula A | 2009-06-18 |
20090152513 | POLAR MOLECULE DOMINATED ELECTRORHEOLOGICAL FLUID - Polar molecules dominated electrorheological fluids mainly comprising a mixture of dispersed phase of solid particles and/or dispersing liquid medium. The dispersed phase solid particles, on the surface, or the liquid dispersing medium contain polar molecules or polar groups, the dipole moment of which is 0.5-10 deb and the size is between 0.1 nm and 0.8 nm. Dispersed phase solid particles are spherical or nearly spherical, of which the size is 10-300 nm and dielectric constant is higher than 50. The conductance rate of the liquid dispersing medium is lower than 10 | 2009-06-18 |
20090152514 | COLOR FILTER INK, COLOR FILTER INK SET, COLOR FILTER, IMAGE DISPLAY DEVICE, AND ELECTRONIC DEVICE - A color filter ink is adapted to be used to manufacture a color filter by an inkjet method. The color filter ink includes C. I. Pigment Green 36, a dispersion medium, and a pigment derivative. The dispersion medium disperses the C. I. Pigment Green 36 and includes one or more compounds selected from the group consisting of 1,3-butylene glycol diacetate, bis(2-butoxyethyl)ether, 2-(2-methoxy-1-methylethoxy)-1-methylethylacetate, triethylene glycol butylmethylether, and diethylene glycol monobutyl ether acetate. The pigment derivative is represented by a prescribed chemical formula. | 2009-06-18 |
20090152515 | COLOR FILTER INK, COLOR FILTER, IMAGE DISPLAY DEVICE, AND ELECTRONIC DEVICE - A color filter ink is adapted to be used to manufacture a color filter by an inkjet method. The color filter ink includes a colorant, a curable resin material and a liquid medium. The curable resin material includes a first polymer containing at least a first epoxy-containing vinyl monomer as a monomer component. The liquid medium dissolves and/or disperses the colorant. The liquid medium includes a compound containing at least one of an alkoxyl group having a carbon number of 4 or higher and an acetyl group at an end of a molecule chain. The liquid medium has a characteristic in which, when a cured urethane-based adhesive material is put into the liquid medium under a sealed condition at an atmospheric pressure and a temperature of approximately 40° C. and left for ten days, a swelling ratio of the cured urethane-based adhesive material is 130% or lower. | 2009-06-18 |
20090152516 | COLOR FILTER INK, COLOR FILTER INK SET, COLOR FILTER, IMAGE DISPLAY, AND ELECTRONIC APPARATUS - A color filter ink, which is used to produce a color filter by using an inkjet method, includes: C. I. pigment yellow 150; and a sulfonated pigment derivative represented by following chemical formula 1: | 2009-06-18 |
20090152517 | COLOR FILTER INK, COLOR FILTER INK SET, COLOR FILTER, IMAGE DISPLAY DEVICE, AND ELECTRONIC DEVICE - A color filter ink is adapted to be used to manufacture a color filter by an inkjet method. The color filter ink includes C. I. Pigment Red 254, a dispersion medium, and a pigment derivative. The dispersion medium disperses the C. I. Pigment Red 254 and includes one or more compounds selected from the group consisting of 1,3-butylene glycol diacetate, bis(2-butoxyethyl)ether, 2-(2-methoxy-1-methylethoxy)-1-methylethylacetate, triethylene glycol butylmethylether, and diethylene glycol monobutyl ether acetate. The pigment derivative is represented by a prescribed chemical formula. | 2009-06-18 |
20090152518 | COLOR FILTER INK, COLOR FILTER INK SET, COLOR FILTER, IMAGE DISPLAY DEVICE, AND ELECTRONIC DEVICE - A color filter ink is adapted to be used to manufacture a color filter by an inkjet method. The color filter ink includes C.I. Pigment Red 177, a dispersion medium, and a pigment derivative. The dispersion medium disperses the C.I. Pigment Red 177 and includes one or more compounds selected from the group consisting of 1,3-butylene glycol diacetate, bis(2-butoxyethyl)ether, 2-(2-methoxy-1-methylethoxy)-1-methylethylacetate, triethylene glycol butylmethylether, and diethylene glycol monobutyl ether acetate. The pigment derivative is represented by a prescribed chemical formula. | 2009-06-18 |
20090152519 | LIGHT WEIGHT METAL FIRE DOOR CORE - The present invention describes a fire resistant building material composition, useful for example as a fire door core and to a method of making this composition where the building material of the present invention is prepared from an aqueous slurry of calcined gypsum, paper fibers, a water insoluble organic binder, fiber reinforcement and a set retarder. | 2009-06-18 |
20090152520 | Pig extracting device - A portable device for extracting a pig from a pipeline which uses a lifting means to raise or lower the device and wheels or other suitable means to allow for the device to be easily and quickly moved into position with minimal man power improving the efficiency and safety of the pig extraction process. | 2009-06-18 |
20090152521 | MANUFACTURING METHOD AND MULTIFUNCTIONAL TUBULAR POST FOR FENCES OBTAINED BY MEANS OF SAID METHOD - The invention relates to a manufacturing process and a multifunctional tubular post for fences obtained thereby, the posts ( | 2009-06-18 |
20090152522 | Fence assembly - A fence assembly comprising a plurality of panels with a panel about to be connected to panel. The panel is shown in part with a dappled appearance at due to the inclusion of a shrink-wrap cover applied to the panel. All other panels also have a similar coating. The panel has a based form of a rigid mesh. The shrink-wrap material is applied to the mesh as a flat panel. The panel with the shrink-wrap so applied is then folded over at the top and bottom to form rail as a lower rail and an upper rail. The panels taper so the spacing between the upper and lower rails is wider at one end than the other so the panels are effectively left and right handed. A star picket is driven ground through the overlapping rails. A cap is applied to the posts and held by a retainer and pin. | 2009-06-18 |
20090152523 | SNAP-TOGETHER FENCING COMPONENTS - A self-locking panel assembly for mounting between a pair of fence posts or deck posts has a first elongate rail having an elongate lower opening, a second elongate rail having an elongate upper opening, and an elongate fence panel having an upper edge and a lower edge. The upper edge of the panel is inserted into the lower opening of the first elongate rail, and the lower edge of the panel is inserted into the upper opening of the second rail. Catches are formed in the first and second rails and/or in the edges of the fence panel such that when the upper and lower edges of the fence panel are inserted into the openings in the rails, the catches hold the fence panel securely in place in the rails. | 2009-06-18 |
20090152524 | Fence stabilization system - A fence stabilization system has a plurality of vertical fence support posts, each having hollow interiors extending the full length of each post. A column insert is positioned within each support post and extends substantially the length of the post. Each column insert is adjacent to, but spaced apart from the outer wall of the support post. The column insert has openings which are aligned with openings in the support post itself for the insertion of horizontal fence rail members into and through both the column insert and support post openings. Locking brackets with threaded connectors are located near the upper ends of the column insert and support post for securing horizontal rail members to the post. Threaded adjustment connectors are located near the lower ends of the column insert and support post to adjust the position of the column insert within the post and to secure the column insert position within the post. | 2009-06-18 |
20090152525 | Gate Bracket Systems and Methods - A bracket system for forming gate assemblies comprising at least two brace members that are rigidly attached to hinge assemblies. The brace members are adapted to be attached to support members to form two corners of a gate box functioning as the structural portion of the gate assembly. The hinge assemblies are adapted to be rigidly attached to a fence post to allow the gate assembly to pivot relative to the fence post. Gate assemblies of arbitrary height and width can be formed using the bracket system. | 2009-06-18 |
20090152526 | Method for manufacturing a memory element comprising a resistivity-switching NiO layer and devices obtained thereof - The present disclosure is related to non-volatile memory devices comprising a reversible resistivity-switching layer used for storing data. The resistivity of this layer can be varied between at least two stable resistivity states such that at least one bit can be stored therein. In particular this resistivity-switching layer is a metal oxide or a metal nitride. A resistivity-switching non-volatile memory element includes a resistivity-switching metal-oxide layer sandwiched between a top electrode and a bottom electrode. The resistivity-switching metal-oxide layer has a gradient of oxygen over its thickness. The gradient is formed in a thermal oxidation step. Set and reset voltages can be tuned by using different oxygen gradients. | 2009-06-18 |
20090152527 | METHOD FOR PRODUCING CATALYST-FREE SINGLE CRYSTAL SILICON NANOWIRES, NANOWIRES PRODUCED BY THE METHOD AND NANODEVICE COMPRISING THE NANOWIRES - Disclosed herein is a method for producing catalyst-free single crystal silicon nanowires. According to the method, nanowires can be produced in a simple and economical manner without the use of any metal catalyst. In addition, impurities contained in a metal catalyst can be prevented from being introduced into the nanowires, contributing to an improvement in the electrical and optical properties of the nanowires. Also disclosed herein are nanowires produced by the method and nanodevice comprising the nanowires. | 2009-06-18 |
20090152528 | HIGH-POWER, BROAD-BAND, SUPERLUMINESCENT DIODE AND METHOD OF FABRICATING THE SAME - Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate. | 2009-06-18 |
20090152529 | LIGHT EMITTING DEVICES WITH INHOMOGENEOUS QUANTUM WELL ACTIVE REGIONS - A method of fabricating a light emitting device includes modulating a crystal growth parameter to grow a quantum well layer that is inhomogeneous and that has a non-random composition fluctuation across the quantum well layer. | 2009-06-18 |
20090152530 | Image sensor including photoelectric charge-trap structure - A pixel of an image sensor includes a first insulating structure, a photoelectric charge-trap structure, a second insulating structure, and a gate electrode. The first insulating structure is formed on a substrate, and the photoelectric charge-trap structure is formed on the first insulating structure. The second insulating structure is formed on the photoelectric charge-trap structure. The gate electrode is formed on the second insulating structure. The photoelectric charge-trap structure converts a significant amount of light reaching the pixel into charge carriers. | 2009-06-18 |
20090152531 | Polar semiconductor hole transporting material - A semiconductive hole transport material containing polar substituent groups, the polar substituent groups substantially not affecting the electronic properties of the hole transport material and the hole transport material being soluble in a polar solvent. | 2009-06-18 |
20090152532 | FIELD EFFECT TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE USING THE SAME - A field-effect transistor includes a semiconductor layer ( | 2009-06-18 |
20090152533 | INCREASING THE EXTERNAL EFFICIENCY OF LIGHT EMITTING DIODES - The present disclosure relates to increasing the external efficiency of light emitting diodes, and specifically to increasing the outcoupling of light from an organic light emitting diode utilizing a diffraction grating. | 2009-06-18 |
20090152534 | Producing Layered Structures With Lamination - A layered structure can include laminated first and second substructures and an array with cell regions. The first substructure can include layered active circuitry, the second a top electrode layer. One or both substructure's surface that contacts the other can be on a polymer-containing layer, structured to generate free charge carriers and/or to transport charge carriers. A cell region of the array can include portions of each substructure; the cell region's portion of the first substructure can include a subregion of electrically conductive material and a subregion of semiconductive material, its portion of the second can include part of the top electrode layer. The layered structure can include one or more lamination artifacts on or in the polymer-containing layer; the lamination artifacts can include artifacts of contact pressure, or heat, or of surface shape, and the interface surface can be without vias. | 2009-06-18 |
20090152535 | NOVEL MATERIALS FOR IMPROVING THE HOLE INJECTION IN ORGANIC ELECTRONIC DEVICES AND USE OF THE MATERIAL - A dopant composition for organic semiconductors is an electron acceptor characterized by an evaporation point above 150° C. or a glass phase. The dopant composition includes a compound represented by structural formula (1): | 2009-06-18 |
20090152536 | DNA-BASED ELECTRONIC DIODES AND THEIR APPLICATIONS - A semiconductor device provides a metal contact, a DNA layer, wherein the metal layer and the DNA layer are adapted to form a Schottky barrier junction there between, and a conductive contact with the DNA layer. | 2009-06-18 |
20090152537 | COMPOSITION FOR ORGANIC POLYMER GATE INSULATING LAYER AND ORGANIC THIN FILM TRANSISTOR USING THE SAME - Provided are a composition for an organic polymer gate insulating layer and an Organic Thin Film Transistor (OTFT) using the same. The composition includes an insulating organic polymer including at least one selected from the group consisting of polymethylmethacrylate (PMMA), polyvinylalcohol (PVA), polyvinylpyrrolidone (PVP), poly(vinyl phenol) (PVPh) and a copolymer thereof, a crosslinking monomer having two or more double bonds, and a photoinitiator. The OTFT includes a gate insulating layer of a semi-interpenetrating polymer network formed of the composition. | 2009-06-18 |
20090152538 | THIAZOLE-BASED SEMICONDUCTOR COMPOUND AND ORGANIC THIN FILM TRANSISTOR USING THE SAME - Provided are an organic semiconductor compound using thiazole, and an organic thin film transistor having an organic semiconductor layer formed of the organic semiconductor compound using thiazole. The novel organic semiconductor compound including thiazole has liquid crystallinity and excellent thermal stability, and thus is provided to form an organic semiconductor layer in the organic thin film transistor. To this end, a silicon oxide layer is formed on a silicon substrate, and an organic semiconductor layer including thiazole is formed on the silicon oxide layer. In addition, source and drain electrodes are formed on both edge portions of the organic semiconductor layer. The organic thin film transistor using the organic semiconductor layer has an improved on/off ratio and excellent thermal stability. Also, a solution process can be applied in its manufacture. | 2009-06-18 |
20090152539 | Semiconductor Apparatus and Fabrication Method of the Same - It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity. | 2009-06-18 |
20090152540 | SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING SAME - A semiconductor device and process for producing same are provided. The process for producing a semiconductor device includes a first embossing step of pressing a stamp having a relief pattern onto a surface of a substrate to form a depression pattern on the surface of the substrate; a second step of feeding an application material composed of a semiconductor material or a conductive material into the depression pattern by printing; and a third step of curing the application material fed by printing. | 2009-06-18 |
20090152541 | ELECTRONIC DEVICE, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention provides a manufacturing process using a droplet-discharging method that is suitable for manufacturing a large substrate in mass production. A photosensitive material solution of a conductive film is selectively discharged by a droplet-discharging method, selectively exposed to laser light, and developed or etched, thereby allowing only the region exposed to laser light to be left and realizing a source wiring and a drain wiring having a more microscopic pattern than the pattern itself formed by discharging. One feature of the source wiring and the drain wiring is that the source wiring and the drain wiring cross an island-like semiconductor layer and overlap it. | 2009-06-18 |
20090152542 | TESTING THE QUALITY OF LIFT-OFF PROCESSES IN WAFER FABRICATION - Test methods and components are disclosed for testing the quality of lift-off processes in wafer fabrication. A wafer is populated with one or more test components along with the functional components. These test components are fabricated with holes in an insulation layer that is deposited between conductive layers, where the holes were created by the same or similar lift-off process that is used to fabricate the functional components on the wafer. The test components may then be measured in order to determine the quality of the holes created by the lift-off process. The quality of the lift-off process used to fabricate the functional components may then be determined based on the quality of the holes in the test components. | 2009-06-18 |
20090152543 | System, Structure and Method of Providing Dynamic Optimization of Integrated Circuits Using a Non-Contact Method of Selection, and a Design Structure - A system, structure and method is provided for providing dynamic optimization of integrated circuits using a non-contact method of selection, and a design structure on which a subject circuit resides. The method is provided for optimizing an electronic system having at least one integrated circuit. The method includes storing a target performance voltage of the at least one integrated circuit; remotely querying the at least one integrated circuit to obtain the target performance voltage; and providing an operational voltage of a next-level assembly according to the stored target performance voltage. | 2009-06-18 |
20090152544 | DISGUISING TEST PADS IN A SEMICONDUCTOR PACKAGE - A method of forming a semiconductor package is disclosed including disguising the test pads. Test pads are defined in the conductive pattern of the semiconductor package for allowing electrical test of the completed package. The test pads are formed in shapes such as letters or objects so that they are less recognizable as test pads. | 2009-06-18 |
20090152545 | Feature Dimension Measurement - A method of measuring dimensional characteristics includes providing a substrate and forming a reflective layer over the substrate. A dielectric layer is then formed over the reflective layer. The dielectric layer includes a grating pattern and a resistivity test line inset in a transparent region. Radiation is then directed onto the dielectric layer so that some of the radiation is transmitted through the transparent region to the reflective layer. A radiation pattern is then detected from the radiation reflected and scattered by the metal grating pattern. The radiation pattern is analyzed to determine a first dimensional information. Then the resistance of the resistivity test line is measured, and that resistance is analyzed to determine a second dimensional information. The first and second dimensional informations are then compared. | 2009-06-18 |
20090152546 | WAFER WITH SCRIBE LANES COMPRISING ACTIVE CIRCUITS FOR DIE TESTING OF COMPLEMENTARY SIGNAL PROCESSING PARTS - A wafer (W) comprises at least one die (D | 2009-06-18 |
20090152547 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH LEADFRAME INTERPOSER AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: forming a substrate; mounting a base integrated circuit on the substrate; forming a leadframe interposer, over the base integrated circuit, by: providing a metal sheet, mounting an integrated circuit die on the metal sheet, injecting a molded package body on the integrated circuit die and the metal sheet, and forming a ball pad, a bond finger, or a combination thereof from the metal sheet that is not protected by the molded package body; coupling a circuit package on the ball pad; and forming a component package on the substrate, the base integrated circuit, and the leadframe interposer. | 2009-06-18 |
20090152548 | Semiconductor Component - A semiconductor component (has at least one semiconductor chip in which an electrical circuit is integrated. The semiconductor chip is surrounded by an electrically insulating encapsulating compound and has on its surface at least one termination surface for a test signal, which is covered by the encapsulating compound. The termination surface is connected in an electrically conductive manner to an analysis contact that projects above the surface of the semiconductor chip, that is located in the interior of the encapsulating compound at a distance from its exterior surface, and that can be exposed by removing a layer of the encapsulating compound located near the exterior. | 2009-06-18 |
20090152549 | MEMORY DEVICE - A memory device is provided, which includes a memory element including a first electrode, a second electrode, and a silicon layer disposed between the first electrode and the second electrode. The memory element is capable of being in a first state, a second state, and a third state. A first data is written to the memory element being in the first state so that a potential of the first electrode is higher than a potential of the second electrode, whereby the memory element being in the second state is obtained. A second data is written to the memory element being in the first state so that a potential of the second electrode is higher than a potential of the first electrode, whereby the memory element being in the third state is obtained. | 2009-06-18 |
20090152550 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device including a microcrystalline semiconductor film with favorable quality and a method for manufacturing the semiconductor device. In a thin film transistor formed using a microcrystalline semiconductor film, yttria-stabilized zirconia having a fluorite structure is formed in the uppermost layer of a gate insulating film in order to improve quality of a microcrystalline semiconductor film to be formed in the initial stage of deposition. The microcrystalline semiconductor film is deposited on the yttria-stabilized zirconia, so that the microcrystalline semiconductor film around an interface with a base particularly has favorable crystallinity while by crystallinity of the base. | 2009-06-18 |
20090152551 | Semiconductor device and manufacturing method thereof - A means of forming unevenness for preventing specular reflection of a pixel electrode, without increasing the number of process steps, is provided. In a method of manufacturing a reflecting type liquid crystal display device, the formation of unevenness (having a radius of curvature r in a convex portion) in the surface of a pixel electrode is performed by the same photomask as that used for forming a channel etch type TFT, in which the convex portion is formed in order to provide unevenness to the surface of the pixel electrode and give light scattering characteristics. | 2009-06-18 |
20090152552 | PIXEL STRUCTURE AND REPAIRING METHOD THEREOF - A pixel structure disposed on a substrate and including a common line, a reserved line, a dielectric layer, two repair lines, an active device, and a pixel electrode is provided. The reserved line and the common line are disposed on the substrate and are covered by the dielectric layer. The repair lines are disposed on the dielectric layer, and each repair line has a first repairing region overlapped with the common line and a second repairing region overlapped with the reserved line. When the common line is open, the repair lines in the first and second repairing regions are connected with the common line and the reserved line, such that the common line, the repair lines, and the reserved line are electrically connected. After the common line, the repair lines, and the reserved line are connected, the above-mentioned pixel structure is effectively repaired. | 2009-06-18 |
20090152553 | THIN-FILM TRANSISTOR, SUBSTRATE AND DISPLAY DEVICE EACH HAVING THE THIN-FILM TRANSISTOR, AND METHOD OF MANUFACTURING THE THIN-FILM TRANSISTOR - A thin-film transistor (TFT) includes a gate electrode, a semiconductor pattern, a source electrode, and a drain electrode. The semiconductor pattern includes an active layer being overlapped with the gate electrode and a low band gap portion having a lower energy band gap than the active layer. The source and drain electrodes are spaced apart from each other to be overlapped with the semiconductor pattern. Therefore, the semiconductor pattern includes a low band gap portion having a lower energy band gap than the active layer, so that electron mobility may be increased in a channel formed along the low band gap portion so that electric characteristics of the TFT may be enhanced. | 2009-06-18 |
20090152554 | THIN FILM TRANSISTOR, DISPLAY DEVICE INCLUDING THE SAME AND MANUFACTURING METHOD THEREOF - A thin film transistor, a display device, and a manufacturing method thereof. The thin film transistor includes a control electrode, a semiconductor overlapping the control electrode, and an input electrode and an output electrode disposed on or under the semiconductor and opposite to each other. The semiconductor includes a first portion disposed between the input electrode and the output electrode and having a first crystallinity, and a second portion connected with the first portion, which overlaps the input electrode or the output electrode, and having a second crystallinity. The first crystallinity is higher than the second crystallinity. | 2009-06-18 |
20090152555 | THIN FILM TRANSISTOR DISPLAY SUBSTRATE AND METHOD OF THE FABRICATING THE SAME - A thin film transistor display substrate comprises a base substrate on which a pixel area including a first reflection area and a second reflection area is defined. A gate line formed on the base substrate and a data line formed on the base substrate. The data line is insulated from and intersected with the gate line to define the pixel area. A thin film transistor is formed in the pixel area and connected to the gate line and the data line. A first reflection layer is formed on the base substrate and corresponds to the first reflection area. A color filter is formed on the first reflection layer and corresponds to the pixel area. A second reflection layer is formed on the color filter and corresponds to the second reflection area. A pixel electrode is formed on the color filter and is electrically connected to the thin film transistor. | 2009-06-18 |
20090152556 | Liquid crystal display panel and fabricating method thereof - A liquid crystal display panel includes: a thin film transistor array substrate having a gate line and a data line provided on the substrate; a gate insulating film between the gate line and the data line; a thin film transistor having a source electrode, a drain electrode and a gate electrode; a pixel electrode; a protective film for protecting the thin film transistor; a plurality of pads; a transparent electrode pattern formed on the data line, source electrode and drain electrode; and a color filter array substrate joined to the thin film transistor array substrate so that the color filter substrate does not overlap the pad area of the thin film transistor array substrate, wherein at least one of the gate insulating film and protective film in the pad area is etched using the color filter array substrate as a mask to expose at least one of the plurality of pads. | 2009-06-18 |
20090152557 | ELECTRO-LUMINESCENCE DEVICE INCLUDING A THIN FILM TRANSISTOR AND METHOD OF FABRICATING AN ELECTRO-LUMINESCENCE DEVICE - An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern. | 2009-06-18 |
20090152558 | Semiconductor device and method of manufacturing the same - Provided is a lateral semiconductor device with a trench structure for improving driving capability. A trench portion is formed in a well to give concave and convex portions in a gate width direction. A gate electrode is formed inside and above the trench portion with an insulating film therebetween. A source region is formed on one side of the gate electrode in a gate length direction, and a drain region is formed on the other side, both formed by impurity diffusion from polycrystalline silicon containing an impurity and filling the inside of the trench portion, deep enough to reach vicinity of the bottom of the gate electrode (vicinity of bottom of trench portion). By thus forming a deep source region and a deep drain region, current flow that would otherwise concentrate on a shallow part in the gate electrode becomes uniform throughout the trench portion and widening of an effective gate width owing to the concave and convex portions formed in the well lowers ON resistance, improving the driving capability. | 2009-06-18 |
20090152559 | MANUFACTURING METHOD OF THIN FILM TRANSISTOR AND MANUFACTURING METHOD OF DISPLAY DEVICE - A manufacturing method of a thin film transistor and a display device using a small number of masks is provided. A first conductive film, an insulating film, a semiconductor film, an impurity semiconductor film, and a second conductive film are stacked. Then, a resist mask having a recessed portion is formed thereover using a multi-tone mask. First etching is performed to form a thin-film stack body, and second etching in which the thin-film stack body is side-etched is performed to form a gate electrode layer. The resist is made to recede, and then, a source electrode, a drain electrode, and the like are formed; accordingly, a thin film transistor is manufactured. | 2009-06-18 |
20090152560 | Method for fabricating thin film transistor array substrate and thin film transistor array substrate - After forming a gate electrode ( | 2009-06-18 |
20090152561 | ORGANIC THIN FILM TRANSISTOR DISPLAY SUBSTRATE, METHOD OF FABRICATING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME - In an organic thin film transistor display substrate, a thin film transistor and a pixel electrode electrically connected to the thin film transistor are formed on an array substrate in which a plurality of pixel areas is defined. Also, color filters are formed in the pixel areas. Each color filter is provided with an opening formed therethrough and an active pattern of thin film transistor is received into the opening. Since the active pattern is formed on the array substrate through an inkjet method, the color filter may receive the active pattern therein in lieu of a bank pattern, thereby simplifying the structure of the organic thin film transistor display substrate and improving its productivity. | 2009-06-18 |
20090152562 | Liquid crystal display device and fabricating method thereof - A method of fabricating a liquid crystal display device includes forming first, second, and third active patterns on a substrate having a pixel region and a driving region, wherein the first and second active patterns are in the driving region and the third active pattern is in the pixel region, the first, second, and third active patterns each having an active region, a source region, and a drain region with the source and drain regions on opposing sides of the active region, forming a gate insulator on the first, second, and third active patterns, forming first, second, and third gate electrodes on the gate insulator, wherein the first, second, and third gate electrodes correspond to the active regions of the first, second, and third active patterns, respectively, doping the source and drain regions of the first, second, and third active patterns with n− ions using the first, second, and third gate electrodes as a doping mask, doping the n− doped source and drain regions of the second active pattern with p+ ions, forming an interlayer insulating film on the first, second, and third gate electrodes and patterning the interlayer insulating film to form contact holes exposing each source and drain regions of the first, second, and third active patterns, and doping the source and drain regions of the first, second, and third active patterns with n+ ions through the contact holes. | 2009-06-18 |
20090152563 | PHOTO-SENSOR AND MANUFACTURING METHOD FOR PHOTO-SENSOR - The present invention prevents disconnection of a source electrode and a drain electrode, taking account of adhesion with amorphous silicon. A photo-sensor according to the present invention is a photo-sensor having a TFT array substrate that has an element region in which thin film transistors are arranged in an array, the photo-sensor comprising a passivation film which is provided above the thin film transistor and in which a contact hole is formed, and a photo-diode which is connected to a drain electrode of the thin film transistor via the contact hole, wherein the passivation film and a gate insulation film are removed in the peripheral area outside the element region of the TFT array substrate, and the edge of the passivation film in the peripheral area is formed at the same position as the edge of the gate insulation film on the periphery of the substrate, or outside the edge of the gate insulation film. | 2009-06-18 |
20090152564 | THIN FILM TRANSISTOR ARRAY SUBSTRATE - A thin film transistor array substrate includes an insulating substrate, a plurality of scan lines, an insulating layer, a plurality of data lines, and a plurality of pixels arranged in an array of rows and columns. The pixels in each row are aligned in a row direction, the pixels in each column are aligned in a column direction, and the pixels are separated from each other by the scan lines and the data lines. Each pixel includes a thin film transistor and a pixel electrode. The pixel electrode has at least one opening that extends from the periphery to the inside of the pixel electrode and at least one extension part that extends in the row direction into an opening of a neighboring pixel electrode in the same row. Each of the scan lines alternately controls one of the pixel electrodes in a first row and one of the pixel electrodes in a second row immediately adjacent to the first row. | 2009-06-18 |
20090152565 | PENDEO EPITAXIAL STRUCTURES AND DEVICES - A substrate comprising a trench lateral epitaxial overgrowth structure including a trench cavity, wherein the trench cavity includes a growth-blocking layer or patterned material supportive of a coalescent Pendeo layer thereon, on at least a portion of an inside surface of the trench. Such substrate is suitable for carrying out lateral epitaxial overgrowth to form a bridged lateral overgrowth formation overlying the trench cavity. The bridged lateral overgrowth formation provides a substrate surface on which epitaxial layers can be grown in the fabrication of microelectronic devices such as laser diodes, high electron mobility transistors, ultraviolet light emitting diodes, and other devices in which low dislocation density is critical. The epitaxial substrate structures of the invention can be formed without the necessity for deep trenches, such as are required in conventional Pendeo epitaxial overgrowth structures. | 2009-06-18 |
20090152566 | Junction field-effect transistor - A junction field-effect transistor comprises an n-type semiconductor layer having a channel region, a buffer layer formed on the channel region and a p | 2009-06-18 |
20090152567 | Article including semiconductor nanocrystals - An article comprising an array of semiconductor nanocrystals arranged in a predetermined pattern, wherein the semiconductor nanocrystals are capable of generating light of one or more predetermined wavelengths in response to ambient light. In one embodiment the semiconductor nanocrystals emit light of different predetermined wavelengths. | 2009-06-18 |
20090152568 | Method for packaging submount adhering light emitting diode and package structure thereof - A method for packaging submount adhering LED comprises providing a first substrate which has an upper surface, a lower surface forming a plurality of heat-dissipating cavities and a plurality of die-attaching regions defined on the upper surface. Each of the heat-dissipating cavities corresponds to the die-attaching region and has a bottom surface, wherein there is a carrier base located between the bottom surface and the die-attaching region. Next, a heat conductor is formed in the heat-dissipating cavity and a plurality of LEDs are disposed on the die-attaching regions of the first substrate. Then, a second substrate is provided which has a first surface facing to the upper surface of the first substrate, a second surface opposite to the first surface and a plurality of reflective slots communicating with the first and second surfaces. Each of the reflective slots corresponds to the LED and the die-attaching region and couples the first and second substrates thereby allowing each of the LEDs to be located in the reflective slot. | 2009-06-18 |
20090152569 | LED MODULE WITH REDUCED OPERATING TEMPERATURE - The present invention relates to a LED module with a reduced operating temperature. The LED module includes a substrate, a plurality of LED chips, a carrier and an encapsulant layer. These LED chips are disposed on the substrate and electrically connected to the substrate and are divided into a first LED chip set and a second LED chip set. The carrier is coupled to the substrate and has a driving circuit. The driving circuit is electrically connected to the plurality of LED chips for driving operations of the plurality of LED chips. The first LED chip set and the second LED chip set emit light in an alternate lighting manner or in a combined simultaneous/alternate lighting manner so as to reduce the operating temperature of the LED module. The encapsulant layer covers the plurality of LED chips, the substrate and the carrier having the driving circuit. | 2009-06-18 |
20090152570 | LED chip package structure with high-efficiency light emission by rough surfaces and method of making the same - An LED chip package structure with high-efficiency light emission by rough surfaces includes a substrate unit, a light-emitting unit, and a package colloid unit. The substrate unit has a substrate body, and a positive electrode trace and a negative electrode trace respectively formed on the substrate body. The light-emitting unit has a plurality of LED chips arranged on the substrate body. Each LED chip has a positive electrode side and a negative electrode side respectively and electrically connected with the positive electrode trace and the negative electrode trace of the substrate unit. The package colloid unit has a plurality of package colloids respectively covering the LED chips. Each package colloid has a cambered colloid surface and a light-emitting colloid surface respectively formed on its top surface and a lateral surface thereof. | 2009-06-18 |
20090152571 | Array type light-emitting device with high color rendering index - An array type light-emitting device with high color rendering index includes: a substrate, an array type light-emitting module, a plurality of wavelength-converting layers, and a plurality of transparent layers. The array type light-emitting module is composed of a plurality of light-emitting chip rows, and each light-emitting chip row has a plurality of first light-emitting chips and at least one second light-emitting chip. The wavelength-converting layers are respectively covered on the first light-emitting chips. Therefore, a part of visible light emitted by the first light-emitting chips is absorbed and converted into visible light with another emission peak wavelength range via the wavelength-converting layers, and the visible light with another emission peak wavelength range mixes with projecting light projected from the second light-emitting chips to make the array type light-emitting device generate mixed white light with a color rendering index of between 90 and 95. | 2009-06-18 |
20090152572 | Array type light-emitting device with high color rendering index - An array type light-emitting device includes a substrate, an array type light-emitting module, a wavelength-converting layer set, and a plurality of transparent layer sets. The array type light-emitting module is composed of a blue, a red, a green, a yellow and an amber light-emitting chip sets. The wavelength-converting layer set is covered on the blue light-emitting chip set. The transparent layer sets are respectively covered on the red, the green, the yellow, the amber light-emitting chip sets. Therefore, a part of visible light emitted by the blue light-emitting chip set is absorbed and converted into visible light with another emission peak wavelength range via the wavelength-converting layer set, and the visible light mixes with projecting light projected from the red, the green, the yellow and the amber light-emitting chip sets to make the array type light-emitting device generate white light with a color rendering index of between 90 and 96. | 2009-06-18 |
20090152573 | Textured encapsulant surface in LED packages - A packaged LED device having a textured encapsulant that is conformal with a mount surface on which at least one LED chip is disposed. The textured encapsulant, which can be textured using an additive or subtractive process, is applied to the LED either prior to or during packaging. The encapsulant includes at least one textured surface from which light is emitted. The textured surface helps to reduce total internal reflection within the encapsulant, improving the extraction efficiency and the color temperature uniformity of the output profile. Several chips can be mounted beneath a single textured encapsulant. A mold having irregular surfaces can be used to form multiple encapsulants over many LEDs simultaneously. | 2009-06-18 |
20090152574 | Multi-wavelength white light-emitting structure - A multi-wavelength white light-emitting structure uses a UV light emitting diode chip and a blue light emitting diode chip to excite a red phosphor and a green phosphor and generates a white light-emitting structure having good color rendering. The multi-wavelength white light-emitting structure uses a UV light emitting diode chip that emits light having a wavelength of between 350˜430 nm to excite a red phosphor to emit red light having a wavelength of between 600˜700 nm. The present invention then uses a blue light emitting diode chip that emits light having a wavelength between of 400˜500 nm to emit blue light and uses the blue light emitting diode chip to excite a green phosphor to emit green light having a wavelength of between 490˜560 nm. Mixing the red light, the blue light and the green light forms a white light. | 2009-06-18 |
20090152575 | Orange-yellow silicate phosphor and warm white semiconductor using same - A silicate phosphor prepared from Mg | 2009-06-18 |
20090152576 | Blue-green light-emitting semiconductor and phosphor for same - A blue-green light emitting semiconductor having an In—Ga—N heterostructure and covered with a light-converting layer formed of a thermosetting polymer layer and an inorganic phosphor having a long wave Stokes radiation displacement characteristic, characterized in that the In—Ga—N semiconductor heterostructure emits light in near ultraviolet region λ=375˜405 nm, the light-converting layer converts the emission λ=375˜405 nm to wavelength λ=505˜515 nm; the wavelength light emitted by the light-converting layer has Stokes displacement 135˜105 nm, color coordinates 0.152009-06-18 | |
20090152577 | LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF - A light emitting diode comprises a substrate having a first surface and a second surface, a light emitting epitaxy structure placed on the first surface of the substrate, and a compound reflection layer placed on the second surface of the substrate. The second surface of the substrate further has a protection structure. | 2009-06-18 |
20090152578 | III-Nitride Semiconductor Light Emitting Device - The present disclosure relates to a III-nitride semiconductor light emitting device which improves external quantum efficiency by using a p-type nitride semiconductor layer with a rough surface, the p-type nitride semiconductor layer including: a first nitride semiconductor layer with a first doping concentration, a second nitride semiconductor layer with a second doping concentration lower than the first doping concentration and with the rough surface, and a third nitride semiconductor layer with a higher doping concentration than a second doping concentration. | 2009-06-18 |
20090152579 | LIGHT-EMITTING DIODE AND LIGHT-EMITTING DIODE LAMP - The present invention provides a light-emitting diode ( | 2009-06-18 |
20090152580 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting chip includes a base, a transparent material layer and a light-emitting chip. The base has an upper surface including a conductive pattern. The transparent material layer is disposed on the upper surface of the base and has an opening part which is located on region at least part of the conductive pattern. The light-emitting chip is mounted on the conductive pattern and located in the opening part of the transparent material layer. | 2009-06-18 |
20090152581 | LIGHT REFLECTING MATERIAL, PACKAGE FOR LIGHT EMITTING ELEMENT ACCOMMODATION, LIGHT EMITTING DEVICE AND PROCESS FOR PRODUCING PACKAGE FOR LIGHT EMITTING ELEMENT ACCOMODATION - [Problems] To provide a package for light emitting element accommodation that realizes enhanced reflectance without application of a metal plating onto a ceramic. | 2009-06-18 |
20090152582 | LIGHT EMITTING DIODE - A light emitting diode includes a reflective cup, an LED chip, and many electrodes, a first light scattering layer, and a phosphor layer. The reflective cup includes a bottom and a sidewall extending from the bottom. The LED chip is received in the reflective cup and mounted on the bottom thereof for emitting first light of a first wavelength. The electrodes each has a first end electrically connected to the LED chip and an opposite second end exposed at an outer surface of the reflective cup. The first light scattering layer formed in the reflective cup on the bottom thereof and covering the LED chip, which has a concave surface at an opposite side thereof to the LED chip. The phosphor layer formed on the concave surface of the light scattering layer for converting part of the first light into second light of a second wavelength. | 2009-06-18 |
20090152583 | LIGHT-EMITTING DIODE DEVICE AND MANUFACTURING METHOD THEREOF - A light-emitting diode device includes an epitaxial layer, a current blocking layer and a current spreading layer. The current blocking layer is disposed on one side of the epitaxial layer and contacts with a portion of the epitaxial layer. The current spreading layer is disposed on one side of the epitaxial layer and contacts with at least a portion of the current blocking layer. | 2009-06-18 |
20090152584 | LIGHT EMITTING DEVICE WITH BONDED INTERFACE - In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device. | 2009-06-18 |
20090152585 | GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE - It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that is excellent in light output efficiency and needs only a low driving voltage (Vf). The inventive gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed of a gallium nitride-based compound semiconductor and stacked in this order on a substrate, and positive and negative electrodes so arranged as to be in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, wherein a region in which a p-type impurity and hydrogen atoms are co-present exists in the p-type semiconductor layer in contact with the positive electrode, and at least a portion, which is in contact with the p-type semiconductor layer, of the positive electrode, is formed of an n-type electro-conductive light transmitting material. | 2009-06-18 |