23rd week of 2013 patent applcation highlights part 41 |
Patent application number | Title | Published |
20130143293 | RENEWABLE ENGINE FUEL AND METHOD OF PRODUCING SAME - The present invention provides non-petroleum high-octane fuel which may be derived from biomass sources, and a method of producing same. The method of production involves reducing the biomass feedstocks to sugars, fermenting the sugars using microorganisms or mutagens thereof to produce ethanol or acetic acid, converting the acetic acid or ethanol to acetone, and converting the acetone to mesitylene and isopentane, the major components of the engine fuel. Trimerization of acetone can be carried out in the presence of a catalyst containing at least one metal selected from the group consisting of niobium, iron and manganese. The ethanol can be converted to mesitylene in a dehydration reaction in the presence of a catalyst of zinc oxide/calcium oxide, and unreacted ethanol and water separated from mesitylene by distillation. These ethanol-based fuels may be formulated to have a wide range of octane values and energy, and may effectively be used to replace 100 LL aviation fuel (known as AvGas), as well as high-octane, rocket, diesel, turbine engine fuels, as well as two-cycle, spark-ignited engine fuels. | 2013-06-06 |
20130143294 | NUCLEIC ACID AND CORRESPONDING PROTEIN NAMED 158P1D7 USEFUL IN THE TREATMENT AND DETECTION OF BLADDER AND OTHER CANCERS - The invention described herein relates to novel nucleic acid sequences and their encoded proteins, referred to as 158P1D7 and variants thereof, and to diagnostic and therapeutic methods and compositions useful in the management of various cancers that express 158P1D7 and variants thereof. | 2013-06-06 |
20130143295 | AMYLASES AND GLUCOAMYLASES, NUCLEIC ACIDS ENCODING THEM AND METHODS FOR MAKING AND USING THEM - In one aspect, the invention is directed to polypeptides having an amylase and/or glucoamylase activity, polynucleotides encoding the polypeptides, and methods for making and using these polynucleotides and polypeptides. In one aspect, the polypeptides of the invention can be used as amylases, for example, alpha amylases, to catalyze the hydrolysis of polysaccharide, oligosaccharide or starch into sugars. In one aspect, the invention provides delayed release compositions comprising an desired ingredient coated by a latex polymer coating. In alternative embodiments, enzymes are used to make biofuels, e.g., ethanol, butanol, propanol, or a gasoline-ethanol mix, including a bioethanol, biopropanol, biobutanol, or a biodiesel, or for any form of fuel or biomass processing. | 2013-06-06 |
20130143296 | Delivery System for Cytotoxic Drugs by Bispecific Antibody Pretargeting - The present invention relates to methods and compositions for pretargeting delivery of therapeutic agents. In preferred embodiments, the pretargeting method comprises: a) administering a bispecific antibody with a first binding site for a disease-associated antigen and a hapten on a targetable construct; b) administering a targetable construct comprising at least one therapeutic agent. In preferred embodiments, the bispecific antibody is made by the dock-and-lock (DNL) technique. In a more preferred embodiment, the targetable construct comprises one or more SN-38 moieties. | 2013-06-06 |
20130143297 | STABILIZED LIQUID TENSIDE PREPARATION COMPRISING ENZYMES - A hydrolytic enzyme is to be stabilized in a liquid surfactant preparation. This is achieved by using a component that stabilizes the hydrolytic enzyme and encompasses an aminophthalic acid. | 2013-06-06 |
20130143298 | STABILIZED LIQUID TENSIDE PREPARATION COMPRISING ENZYMES - A hydrolytic enzyme is to be stabilized in a liquid surfactant preparation. This is achieved by using a component that stabilizes the hydrolytic enzyme and encompasses a phthaloylglutamic acid and/or a phthaloylaspartic acid. | 2013-06-06 |
20130143299 | RNF8-FHA DOMAIN-MODIFIED PROTEIN AND METHOD OF PRODUCING THE SAME - Provided is an antigen-binding protein prepared merely by a method of in vitro selection using the RNF8-FHA domain, which has no intramolecular disulfide bond and functions in cells as it is. One to four loops extending from the FHA domain are randomized, and a recognition site for a target molecule is artificially created on the FHA domain surface to construct an RNF8-FHA domain library. Using the library, an antigen-binding protein is efficiently selected in vitro. | 2013-06-06 |
20130143300 | NOVEL COMPOSITIONS WITH POLYMERASE ACTIVITY - The invention provides novel compositions with polymerase activity and methods of using the compositions. | 2013-06-06 |
20130143301 | BETA-GLUCOSIDASE I VARIANTS WITH IMPROVED PROPERTIES - The present disclosure is generally directed to enzymes and in particular beta-glucosidase variants. Also described are nucleic acids encoding beta-glucosidase variants, compositions comprising beta-glucosidase variants, methods of using beta-glucosidase variants, and methods of identifying additional useful beta-glucosidase variants. | 2013-06-06 |
20130143302 | METHOD FOR PURIFYING GLA-DOMAIN COAGULATION PROTEINS - A method for purifying GLA-domain coagulation proteins, includes the following steps: a) bringing a sample containing one or more GLA-domain coagulation proteins into contact with an affinity substrate on which nucleic aptamers which bind specifically to the GLA-domain coagulation proteins are immobilized, in order to form complexes between (i) the nucleic aptamers and (ii) the GLA-domain coagulation protein(s), b) releasing the GLA-domain coagulation protein(s) from the complexes formed in step a), and c) recovering the GLA-domain coagulation protein(s) in a purified form. | 2013-06-06 |
20130143303 | Bionanomaterials and Their Synthesis - The use of biomaterials, such as viruses and virus-like particles, to form nanostructures is generally disclosed. For instance, rod-like viruses can be used to form composite nanofibers that are fixed together in a head-to-tail assembly by a polymer. Also, 2-dimensional nanostructures formed from crosslinked viruses assembled in a single, film-like layer are generally disclosed. Porous gels having controllable pore size through the use of virus particles are also disclosed. | 2013-06-06 |
20130143304 | LIGF-TYPE SYSTEMS FOR BIOCONVERSION OF LIGNIN-DERIVED COMPOUNDS - The teachings provided herein are generally directed to a method of converting lignin-derived compounds to valuable aromatic chemicals using an enzymatic, bioconversion process. The teachings provide a selection of (i) host cells that are tolerant to the toxic compounds present in lignin fractions; (ii) polypeptides that can be used as enzymes in the bioconversion of the lignin fractions to the aromatic chemical products; (iii) polynucleotides that can be used to transform the host cells to express the selection of polypeptides as enzymes in the bioconversion of the lignin fractions; and (iv) the transformants that express the enzymes. | 2013-06-06 |
20130143305 | PRODUCTION OF POLYUNSATURATED FATTY ACIDS IN OLEAGINOUS YEASTS - The present invention relates to methods for the production of ω-3 and/or ω-6 fatty acids in oleaginous yeast. Thus, desaturases and elongases able to catalyze the conversion of linoleic acid (LA) to γ-linolenic acid (GLA); α-linoleic acid (ALA) to stearidonic acid (STA); GLA to dihomo-γ-linoleic acid (DGLA); STA to eicosatetraenoic acid (ETA); DGLA to arachidonic acid (ARA); ETA to eicosapentaenoic acid (EPA); DGLA to ETA; EPA to docosapentaenoic acid (DPA); and ARA to EPA have been introduced into the genome of | 2013-06-06 |
20130143306 | Methods and Compositions for the Recombinant Biosynthesis of Fatty Acids and Esters - The present disclosure identifies methods and compositions for modifying photoautotrophic organisms, such that the organisms efficiently convert carbon dioxide and light into compounds such as esters and fatty acids. In certain embodiments, the compounds produced are secreted into the medium used to culture the organisms. | 2013-06-06 |
20130143307 | AUTOMATIC CULTURE DEVICE - In order to uniformly sow cells on the culture surface of a cartridge-type closed culture vessel and remove bubbles contaminating in liquid culture medium in the course of automatic culture, an automatic culture equipment is provided with a flow-controlling mechanism section for solving the non-uniformity in cell distribution by, after filling up a culture space in the cartridge-type closed culture vessel, said cartridge-type closed culture vessel being in an upright position, with cell suspension, turning the cartridge-type closed culture vessel into a horizontal position, and then repeatedly supplying the cell suspension and sucking the same multiple times to thereby create a mixing flow in the cell suspension. In this process, the liquid in channels is efficiently sent by applying a reduced pressure and an elevated pressure respectively to a channel on one side and a channel on the opposite side, using two syringes and check valves connected to the channels, to thereby load forces to the liquid from both sides. The liquid can be sent without any cell loss by conducting the same operations of the flow-controlling mechanism section in a tank and in a cell bag. | 2013-06-06 |
20130143308 | SYSTEMS AND METHODS FOR FLUORESCENCE DETECTION WITH A MOVABLE DETECTION MODULE - A fluorescence detection apparatus for analyzing samples located in a plurality of wells in a thermal cycler and methods of use are provided. In one embodiment, the apparatus includes a support structure attachable to the thermal cycler and a detection module movably mountable on the support structure. The detection module includes one or more channels, each having an excitation light generator and an emission light detector both disposed within the detection module. When the support structure is attached to the thermal cycler and the detection module is mounted on the support structure, the detection module is movable so as to be positioned in optical communication with different ones of the plurality of wells. The detection module is removable from the support structure to allow easy replacement. | 2013-06-06 |
20130143309 | DIAGNOSTIC INSTRUMENT AND FLOW PROCESS - A diagnostic instrument having a cellular analysis system capable of running standardized immune monitoring panels. The system could include an automated and integrated specimen sampling method through a continuous flow process. The instrument could include a probe washer station, scheduler, cassette autoloader, bar coding system, and/or containment area common interface. An improved optimization test is proposed for instrument and flow cytometer quality assurance. The proposed method analyzes population separation for measuring instrument performance and/or sample quality. Such a method may also use population separation for measuring sample and/or run quality. | 2013-06-06 |
20130143310 | OPTICAL INSTRUMENT COMPRISING MULTI-NOTCH BEAM SPLITTER - An instrument is provided that can monitor nucleic acid sequence amplification reactions, for example, PCR amplification of DNA and DNA fragments. The instrument includes a multi-notch filter disposed along one or both of an excitation beam path and an emission beam path. Methods are also provided for monitoring nucleic acid sequence amplifications using an instrument that includes a multi-notch filter disposed along a beam path. | 2013-06-06 |
20130143311 | Immunoassay Analyzer and Immunoassay Method - The present invention provides an immunoassay analyzer capable of discriminating between normal coloring due to a specific immunoreaction and abnormal coloring due to a cause other than the specific immunoreaction in a measurement region of a sample analysis tool. An immunoassay analyzer | 2013-06-06 |
20130143312 | DROPLET-BASED CELL CULTURE AND CELL ASSAYS USING DIGITAL MICROFLUIDICS - We introduce a new method for implementing cell-based assays and long-term cell culture. The method is based on digital microfluidics (DMF) which is used to actuate nanoliter droplets of reagents and cells on a planar array of electrodes. DMF method is suitable for assaying and culturing both cells in suspension and cells grown on surface (adherent cells). This method is advantageous for cell culture and assays due to the automated manipulation of multiple reagents in addition to reduced reagent use and analysis time. No adverse effects of actuation by DMF were observed in assays for cell viability, proliferation, and biochemistry. These results suggest that DMF has great potential as a simple yet versatile analytical tool for implementing cell-based assays and cell culture on the microscale. | 2013-06-06 |
20130143313 | SEPARATIVE HARVESTING DEVICE - A harvesting device for capturing a biological product directly by binding the secreted biological product with a resin, discarding the nutrient medium and eluting the biological product as a concentrated solution, eliminating the steps of sterile filtration and volume reduction, thus allowing one to combine the steps of recombinant expression and separation of a biological product. The method allows loading of resin for column-purification, eliminating all steps of perfusion process and maintaining a sink condition of a toxic product in nutrient medium to optimize productivity of host cells. The instant invention also allows harvesting of solubilized inclusion bodies after the cells have been lysed and refolding of proteins inside the bioreactor. | 2013-06-06 |
20130143314 | THERAPEUTIC USES OF MICROVESICLES AND RELATED MICRORNAS - The present invention provides improved methods and compositions based on microvesicles for the treatment of various diseases, disorders and conditions. In particular, the present invention encompasses the recognition that microvesicles contain specific microRNAs which may function as intercellular regulators involved in cell or tissue regeneration, remodeling, reconstruction, reprogramming or transdifferentiation. Thus, among other things, the present invention provides methods and compositions based on microvesicles and/or associated microRNAs that provide more predictable and effective therapeutic results. | 2013-06-06 |
20130143315 | SHEET-SHAPED CELL CULTURE DISSOCIATION SYSTEM AND METHOD - Disclosed is a system for dissociating a sheet-shaped cell culture into individual cells. The system, so configured as to minimize the amount of damage to cells when dissociating a sheet-shaped cell culture into individual cells, in one form includes: (i) a reaction unit that dissociates the sheet-shaped cell culture; (ii) a sensor unit that acquires information relating to a particle size distribution of cells inside the reaction unit; and (iii) an analysis unit that computes the particle size distribution of the cells from the information acquired by the sensor unit and determines and outputs a dissociation state. | 2013-06-06 |
20130143316 | NUCLEIC ACIDS MOLECULE ENCODING THE POLYPEPTIDE FOR TREATING VIRUS-INDUCED CANCER - The present invention relates to nucleic acid molecules encoding the polypeptides that are capable of killing tumor cells. The molecules comprise a targeting agent covalently attached to a channel-forming moiety. In a preferred embodiment, the channel-forming moiety comprises a colicin and the targeting agent is a reconstructed antibody mimetic derived from monoclone antibody against Epstein-Barr virus gp350/220. | 2013-06-06 |
20130143317 | METHODS OF GROWING AN EMBRYO TO A BLASTOCYTE STAGE OF DEVELOPMENT - The present invention relates generally to the fields of reproductive medicine. More specifically, the present invention relates to a novel human embryo co-culture system to improve human embryo growth in vitro and, consequently, increase pregnancy rates in infertile women undergoing in vitro fertilization (IVF) treatment. More particularly, the present invention relates to a method of growing an embryo to a blastocyst stage of development comprising the step of coculturing said embryo in the presence of a population of cumulus cells. | 2013-06-06 |
20130143318 | COMPOSITIONS FOR INHIBITION OF RNA POLYMERASE I AND METHODS OF PRODUCTION AND USE THEREOF - Compositions for inhibition of RNA Polymerase I include peptides of Rpa43. Methods of production and use thereof are also disclosed. | 2013-06-06 |
20130143319 | Use of Functional Nanoelectrodes for Intracellular Delivery of Chemical and Biomolecular Species - The invention provides methods of controlled release of an agent into an intracellular environment of a biological cell using a needle nanoelectrode. The agent may be attached to an outer surface of the needle nanoelectrode through a linking molecule, wherein the attachment comprises an electroactive chemical bond. After penetrating a cellular membrane with the needle nanoelectrode to position at least a portion of the nanoelectrode in the intracellular environment, an electric potential may be applied to the needle nanoelectrode to break the electroactive chemical bond, thereby releasing the agent to the intracellular environment. The linking molecule may be a surface active organosulfur compound capable of forming a self-assembled monolayer on a metal surface of the nanoelectrode | 2013-06-06 |
20130143320 | METHODS AND COMPOSITIONS FOR MANIPULATING THE GUIDED NAVIGATION OF ENDOTHELIAL TUBES DURING ANGIOGENESIS - Methods and compositions for manipulating the directed navigation of physiological tracking tubular structures are provided. A novel cell-bound receptor, roundabout-4 (Robo-4), is described. The Robo-4 receptor shows sequence and structural similarity to members of the roundabout family of receptors. Also, the Robo-4 receptor binds Slit ligand, a known receptor of the roundabout receptors. Polynucleotides and polypeptides of the Robo-4 receptor are described. | 2013-06-06 |
20130143321 | METHOD OF INDUCING DIFFERENTIATION FROM PLURIPOTENT STEM CELLS TO GERM CELLS - This invention provides a method of producing an epiblast-like cell (EpiLC) from a pluripotent stem cell, which comprises culturing the pluripotent stem cell in the presence of activin A; a method of producing a primordial germ cell-like (PGC-like) cell a pluripotent stem cell, which comprises culturing the EpiLC obtained by the method above in the presence of BMP4 and LIF. Also provided are a cell population containing PGC-like cells as obtained by the method, and reagent kits for the EpiLC- and PGC-like cell-induction from a pluripotent stem cell. | 2013-06-06 |
20130143322 | METHOD FOR CONTROLLING PROLIFERATION OF CORD BLOOD HEMATOPOIETIC STEM CELLS AND USE THEREOF - The present invention provides a method for controlling the proliferation and differentiation of cord blood-derived hematopoietic stem cells with excellent safety when proliferating them by culturing. The hematopoietic stem cells are inoculated into a medium containing a sonicated liquid component of cord blood. The proliferation and differentiation of the cord blood hematopoietic stem cells can be inhibited in the presence of the sonicated liquid component of cord blood. On the contrary, the proliferation of cord blood hematopoietic stem cells can be accelerated by inoculating the hematopoietic stem cells into a medium containing a non-sonicated liquid component of cord blood. Thus, according to the present invention, by using serum derived from cord blood, it is possible to regulate the inhibition of the proliferation and differentiation of cord blood hematopoietic stem cells and the acceleration of the proliferation of the same as desired. | 2013-06-06 |
20130143323 | APPARATUS AND METHOD FOR DECELLULARIZING, RECELLULARIZING OR TREATING ORGANS - A biomedical device and method provide for decullularization, recellularization or other treatment of an organ of a human or animal. To keep pressures to a minimum and to ensure that the perfusion fluid uniformly perfused the organ, the organ is supported and rotated during the perfusion process. The organ is supported by a medium, which may comprise a liquid or pallets in a vessel, with a vessel mounted for limited rotation. The perfusion tubing, for supply of perfusion fluid to inform the organ can be mounted both to a support structure and the vessel. The perfusion system can include tubing for supply of air or an air substitute. | 2013-06-06 |
20130143324 | PROCESS FOR THE PREPARATION OF DISINFECTED HUMAN CELL SUSPENSIONS - The invention relates to a process for the preparation of disinfected single-cell preparations from mammalian tissues and to the preparations thus prepared. | 2013-06-06 |
20130143325 | BIOCOMPATIBLE POLY (AMIC ACID) AND METHOD OF PREPARATION THEREOF - A method is provided for the preparation of a poly(amic acid) in which ring opening polymerization is employed to react the monomers ethylenediaminetetraacetic dianhydride and paraphenylenediamine in an aprotic solvent. The resulting poly(amic acid) composition is suitable as a biocompatible material, such as a biomedical implant, implant coating material, tissue scaffold material, controlled release drug delivery vehicle, and cellular growth substrate. | 2013-06-06 |
20130143326 | ULTRATHIN PARYLENE-C SEMIPERMEABLE MEMBRANES FOR BIOMEDICAL APPLICATIONS - Thin parylene C membranes having smooth front sides and ultrathin regions (e.g., 0.01 μm to 5 μm thick) interspersed with thicker regions are disclosed. The back sides of the membranes can be rough compared with the smooth front sides. The membranes can be used in vitro to grow monolayers of cells in a laboratory or in vivo as surgically implantable growth layers, such as to replace the Bruch's membrane in the eye. The thin regions of parylene are semipermeable to allow for proteins in serum to pass through, and the thick regions give mechanical support for handling by a surgeon. The smooth front side allows for monolayer cell growth, and the rough back side helps prevents cells from attaching there. | 2013-06-06 |
20130143327 | TEST APPARATUS AND CONTROL METHOD THEREOF - A test apparatus in which detectors and objects to be detected are rotated at the same speed, and a control method thereof are provided. The test apparatus includes a rotation driving unit that includes a rotary shaft; a microfluidic device that is loaded on the rotary shaft and includes at least one object to be detected; a rotating member that is mounted on the rotary shaft and includes at least one detector to detect the objects of the microfluidic device; and a controller configured to operate the rotation driving unit such that the microfluidic device and the rotating member are rotated at the same speed on the rotary shaft. | 2013-06-06 |
20130143328 | Automated Assay Fluid Dispensing - An automated assay fluid dispensing system includes a database that associates assay protocols with assay procedures, the procedures including a first assay procedure specifying dissimilar first and second channel procedures for driving first and second channels of a fluid-dispenser cassette. The system includes a controller with a procedure selector to select or to assist a human to select an assay procedure from the database to be executed in an assay run. The controller also includes a cassette driver to drive the cassette to dispense fluids automatically to multiple sites during the assay run so that fluids in the first and second channels are dispensed in accordance with the dissimilar first and second channel procedures. The system includes a cassette interface to engage the cassette so that the controller can drive it to implement the assay run. | 2013-06-06 |
20130143329 | METHODS FOR DETECTING DIHYDROXYVITAMIN D METABOLITES BY MASS SPECTROMETRY - Provided are methods of detecting the presence or amount of a dihydroxyvitamin D metabolite in a sample using mass spectrometry. The methods generally comprise ionizing a dihydorxyvitamin D metabolite in a sample and detecting the amount of the ion to determine the presence or amount of the vitamin D metabolite in the sample. In certain preferred embodiments the methods include immunopurifying the dihydroxyvitamin D metabolites prior to mass spectrometry. Also provided are methods to detect the presence or amount of two or more dihydroxyvitamin D metabolites in a single assay. | 2013-06-06 |
20130143330 | Energetic Material Reaction Characteristic Detector - A reaction characteristic detector comprising a ladder assembly including a plurality of rungs, where each rung in the plurality of rungs comprises a reaction passage determiner spaced a distance from a point of an energetic material reaction initiation. Each reaction passage determiner has at least one characteristic that is configured to change in response to the reaction occurring proximate to the reaction passage determiner. | 2013-06-06 |
20130143331 | COMPOSITIONS AND METHODS FOR PHOTOCONTROLLED HYBRIDIZATION AND DEHYBRIDIZATION OF A NUCLEIC ACID - Compositions and methods are provided that enable light-controlled hybridization between two nucleic acid sequences. | 2013-06-06 |
20130143332 | SPFS SENSOR EQUIPPED WITH MECHANISM PURIFYING NON-SPECIFICALLY ADSORPTIVE CONTAMINANTS - [Object] It is an object of the invention to provide a sensor area which can suppress a decrease in assay signal and an increase in assay blank in an SPFS measurement. | 2013-06-06 |
20130143333 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME - A semiconductor device includes a substrate and a ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode. The upper electrode includes a first layer formed of an oxide whose stoichiometric composition is expressed as AOx | 2013-06-06 |
20130143334 | METHOD OF ENHANCING COLOR RENDERING INDEX OF A WHITE LED - The present invention discloses a method of enhancing color rendering index (CRI) of a white light emitting diode (LED), and particularly discloses a method of enhancing CRI of a white LED by adding a blue-green (or aquamarine) phosphor which can emit a light having wavelength of 485 nm to 519 nm. | 2013-06-06 |
20130143335 | METHOD AND APPARATUS FOR OPTICAL MODULATION - The present invention is a method and an apparatus for optical modulation, for example for use in optical communications links. In one embodiment, an apparatus for optical modulation includes a first silicon layer having one or more trenches formed therein, a dielectric layer lining the first silicon layer, and a second silicon layer disposed on the dielectric layer and filling the trenches. | 2013-06-06 |
20130143336 | Methods of Fabricating Optoelectronic Devices Using Layers Detached from Semiconductor Donors and Devices Made Thereby - Methods of making optoelectronic devices containing functional elements made from layers liberated from natural and/or fabricated lamellar semiconductor donors. In one embodiment, a donor is provided, a layer is detached from the donor, and the layer is incorporated into an optoelectronic device as a functional element thereof. The thickness of the detached layer is tuned as needed to suit the functionality of the functional element. Examples of functional elements that can be made using detached layers include p-n junctions, Schotkey junctions, PIN junctions, and confinement layers, among others. Examples of optoelectronic devices that can incorporate detached layers include LEDs, laser diodes, MOSFET transistors, and MISFET transistors, among others. | 2013-06-06 |
20130143337 | ORGANIC ELECTROLUMINESCENT DEVICE - The invention relates to OLED devices ( | 2013-06-06 |
20130143338 | METHODS OF FABRICATION OF HIGH-DENSITY LASER DIODE STACKS - A method of fabricating a high-density laser diode stack is disclosed. The laser diode bars each have an emitter surface and opposing surfaces on either side of the emitter surface. Each laser diode bar has metallization layers on the opposing surfaces and a solder layer on at least one of the metallization layers. The solder layer is applied to a semiconductor wafer prior to cleaving the wafer to create the laser diode bars. The laser diode bars are arranged in a stack such that the emitter surfaces of the bars are facing the same direction. The stack of laser diode bars is placed in a vacuum chamber. An anti-reflection coating is deposited on the emitter surfaces of the laser diode bars in the chamber. The laser diode bars are joined by applying a temperature sufficient to reflow the solder layers in the chamber. | 2013-06-06 |
20130143339 | FORMATION OF UNIFORM PHOSPHOR REGIONS FOR BROAD-AREA LIGHTING SYSTEMS - In accordance with certain embodiments, phosphor arrangements are formed via adhering phosphors to activated regions on a substrate and transferring them to a different substrate. | 2013-06-06 |
20130143340 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is located to cover the entire surface of the second semiconductor layer which is away from the active layer. | 2013-06-06 |
20130143341 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode includes the following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. The substrate is removed and a surface of the first semiconductor layer is exposed. A first electrode is applied to cover the exposed surface. A second electrode is electrically connected with the second semiconductor layer. | 2013-06-06 |
20130143342 | METHOD FOR MAKING LIGHT EMITTING DIODE - A method for making light emitting diode is provided. The method includes following steps. A substrate is provided. A first semiconductor layer is grown on a surface of the substrate. A patterned mask layer is located on a surface of the first semiconductor layer, and the patterned mask layer includes a number of bar-shaped protruding structures, a slot is defined between each two adjacent protruding structures to expose a portion of the first semiconductor layer. The exposed first semiconductor layer is etched to form a protruding pair. A number of three-dimensional nano-structures are formed by removing the patterned mask layer. An active layer and a second semiconductor layers are grown on the number of three-dimensional nano-structures in that order. A first electrode is electrically connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. | 2013-06-06 |
20130143343 | METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE - A method of manufacturing a light-emitting device including a light-emitting element which emits light with a predetermined wavelength and a wavelength conversion portion including a fluorescent substance which is excited by the light emitted from the light-emitting element to emit fluorescence with a wavelength different from the predetermined wavelength, includes the followings. First, spraying so as to apply a liquid mixture containing a layered silicate mineral and a translucent ceramic precursor on the light-emitting element from a nozzle is performed while the nozzle is moved relative to the light-emitting element. Subsequently, forming of the wavelength conversion portion by heating the sprayed and applied liquid mixture is performed. | 2013-06-06 |
20130143344 | LIGHT-EMITTING ELEMENT - A light-emitting element includes a n-type silicon oxide film and a p-type silicon nitride film. The n-type silicon oxide film and the p-type silicon nitride film formed on the n-type silicon oxide film form a p-n junction. The n-type silicon oxide film includes a plurality of quantum dots composed of n-type Si while the p-type silicon nitride film includes a plurality of quantum dots composed of p-type Si. Light emission occurs from the boundary between the n-type silicon oxide film and the p-type silicon nitride film by injecting electrons from the n-type silicon oxide film side and holes from the p-type silicon nitride film side. | 2013-06-06 |
20130143345 | Method of Fabricating Light-Emitting Device and Apparatus for Manufacturing Light-Emitting Device - In this embodiment, an interval distance between a deposition source holder 17 and an object on which deposition is performed (substrate | 2013-06-06 |
20130143346 | METHOD FOR PRODUCING LIGHT-EMITTING ELEMENTS - A light-emitter is configured so that at least a hole injection layer and a light-emitting layer are laminated between a first electrode and a second electrode, and the light-emitting layer is formed in an area defined by a bank. In the area defined by the bank, the hole injection layer is formed so as to have a recess in an upper surface thereof. An upper peripheral edge of the recess is covered with a part of the bank. The light-emitting layer is formed with respect to the recess formed in the hole injection layer by a laser transfer method. | 2013-06-06 |
20130143347 | METHODS AND DEVICES FOR FABRICATING TRI-LAYER BEAMS - Methods and devices for fabricating tri-layer beams are provided. In particular, disclosed are methods and structures that can be used for fabricating multilayer structures through the deposition and patterning of at least an insulation layer, a first metal layer, a beam oxide layer, a second metal layer, and an insulation balance layer. | 2013-06-06 |
20130143348 | HEAT TREATMENT METHOD OF SEMICONDUCTOR WAFERS, MANUFACTURING METHOD OF SOLAR BATTERY, AND HEAT TREATMENT DEVICE - A heat treatment method of the present invention includes mounting a plurality of semiconductor wafers upright on a treatment boat in parallel to each other, inserting the treatment boat in a space above an injector located in a tube to be oriented to plane surfaces of the semiconductor wafers in parallel to an extending direction of the tube, and heating the tube while continuously supplying source gas into the tube through openings of the injector. | 2013-06-06 |
20130143349 | SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - In one embodiment, a method of manufacturing a solar cell includes forming a first electrode over a substrate; forming a light-converting layer over the first electrode and patterning the light-converting layer to form a plurality of patterned light-converting layers that are spaced apart from each other; forming a transparent insulating layer over the first electrode including the patterned light-converting layers; and forming a second electrode over the transparent insulating layer. | 2013-06-06 |
20130143350 | MANUFACTURE METHOD OF SENSOR - An embodiment of the invention discloses a manufacture method of a sensor comprising: preparing gate scanning lines on a substrate; depositing a gate insulating layer on the gate scanning lines; sequentially depositing a gate insulation thin film, an active layer thin film, an ohmic contact layer thin film, a first conducting layer thin film and a photoelectric conversion layer thin film, and after the depositing, processing a lamination structure of the thin films with a gray-tone mask plate to obtain switch devices and photoelectric sensing devices; and then sequentially preparing a first passivation layer, bias lines and a second passivation layer. | 2013-06-06 |
20130143351 | SMALL PIXEL FOR CMOS IMAGE SENSORS WITH VERTICALLY INTEGRATED SET AND RESET DIODES - A pixel of an image sensor, the pixel includes a floating diffusion node to sense photo-generated charge, a reset diode to reset the floating diffusion node in response to a reset signal, and a set diode to set the floating diffusion node. | 2013-06-06 |
20130143352 | PHOTOVOLTAIC DEVICES INCLUDING MG-DOPED SEMICONDUCTOR FILMS - A photovoltaic cell can include a dopant in contact with a semiconductor layer. | 2013-06-06 |
20130143353 | PATTERNED IMPLANT OF A DIELECTRIC LAYER - At least part of a dielectric layer is implanted to form implanted regions. The implanted regions affect the etch rate of the dielectric layer during the formation of the openings through the dielectric layer. Metal contacts may be formed within these openings. The dielectric layer, which may be SiO | 2013-06-06 |
20130143354 | TCO MATERIALS FOR SOLAR APPLICATIONS - A method for forming a transparent conductive oxide (TCO) film for use in a TFPV solar device comprises the formation of a tin oxide film doped with between about 5 volume % and about 40 volume % antimony (ATO). Advantageously, the Sb concentration generally ranges from about 15 volume % to about 20 volume % and more advantageously, the Sb concentration is about 19 volume %. The ATO films exhibited almost no change in transmission characteristics between about 300 nm and about 1100 nm or resistivity after either a 15 hour exposure to water or an anneal in air for 8 minutes at 650 C, which indicated the excellent duarability. Control sample of Al doped zinc oxide (AZO) exhibited degradation of resistivity for both a 15 hour exposure to water and an anneal in air for 8 minutes at 650 C. | 2013-06-06 |
20130143355 | Back-Contact for Thin Film Solar Cells Optimized for Light Trapping for Ultrathin Absorbers - Methods for increasing the power output of a TFPV solar panel using thin absorber layers comprise techniques for roughening and/or texturing the back contact layer. The techniques comprise roughening the substrate prior to the back contact deposition, embedding particles in sol-gel films formed on the substrate, and forming multicomponent, polycrystalline films that result in a roughened surface after a wet etch step, etc. | 2013-06-06 |
20130143356 | N-Dopant for Carbon Nanotubes and Graphene - A composition and method for forming a field effect transistor with a stable n-doped nano-component. The method includes forming a gate dielectric on a gate, forming a channel comprising a nano-component on the gate dielectric, forming a source over a first region of the nano-component, forming a drain over a second region of the nano-component to form a field effect transistor, and exposing a portion of a nano-component of a field effect transistor to dihydrotetraazapentacene to produce a stable n-doped nano-component, wherein dihydrotetraazapentacene is represented by the formula: | 2013-06-06 |
20130143357 | METHOD OF FORMING ORGANIC THIN FILM AND ORGANIC THIN FILM FORMING APPARATUS, AS WELL AS METHOD OF MANUFACTURING ORGANIC DEVICE - There is provided a method of forming an organic thin film, capable of forming a single-crystal organic thin film easily and rapidly while controlling a thickness and a size. After an organic solution is supplied to one surface (a solution accumulating region wide in width, and a solution constricting region narrow in width and connected thereto) of a film-formation substrate supported by a support controllable in temperature, a movable body controllable in temperature independently of the support is moved along a surface of the support while being kept in contact with the organic solution. The temperature of the support is set at a temperature positioned between a solubility curve and a super-solubility curve concerning the organic solution, and the temperature of the movable body is set at a temperature positioned on a side higher in temperature than the solubility curve. | 2013-06-06 |
20130143358 | METHOD FOR MANUFACTURING OXIDE THIN FILM TRANSISTOR - A method for manufacturing an oxide thin film transistor with leakage currents less than 10 | 2013-06-06 |
20130143359 | SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD OF THE SAME - A semiconductor device having a structure in which the structure is laminated in many stages is made thin. A reforming area is formed by irradiating a laser beam, where a condensing point is put together with the inside of the semiconductor substrate of a semiconductor wafer. Then, after applying the binding material of liquid state to the back surface of a semiconductor wafer by a spin coating method, this is dried and a solid-like adhesive layer is formed. Then, a semiconductor wafer is divided into each semiconductor chip by making the above-mentioned reforming area into a division origin. By pasting up this semiconductor chip on the main surface of the other semiconductor chip by the adhesive layer of the back surface, a semiconductor device having a structure in which the semiconductor device is laminated in many stages is manufactured. | 2013-06-06 |
20130143360 | SEMICONDUCTOR STRUCTURE AND METHOD FOR MAKING THE SAME - The present invention relates to a semiconductor structure and a method for making the same. The method includes the following steps: (a) providing a first wafer and a second wafer; (b) disposing the first wafer on the second wafer; (c) removing part of the first wafer, so as to form a groove; (d) forming a through via in the groove; and (e) forming at least one electrical connecting element on the first wafer. Therefore, the wafers are penetrated and electrically connected by forming only one conductive via, which leads to a simplified process and a low manufacturing cost, | 2013-06-06 |
20130143361 | Packaging Process Tools and Systems, and Packaging Methods for Semiconductor Devices - Packaging process tools and systems, and packaging methods for semiconductor devices are disclosed. In one embodiment, a packaging process tool for semiconductor devices includes a mechanical structure for supporting package substrates or integrated circuit die during a packaging process for the integrated circuit die. The mechanical structure includes a low thermal conductivity material disposed thereon. | 2013-06-06 |
20130143362 | ORGANIC ELECTRONIC DEVICES - A technique comprising: mounting a device substrate on a processing support, forming one or more electronic elements on the device substrate with the device substrate thus mounted on the processing support; wherein the device substrate comprises an organic support structure, and provides primary protection for the overlying electronic elements against the ingress of a degrading species from a side of the device substrate opposite to the one or more electronic elements. | 2013-06-06 |
20130143363 | ADHESIVE COMPOSITION FOR SEMICONDUCTOR AND ADHESIVE FILM COMPRISING THE SAME - An adhesive film for a semiconductor may include about 60 wt % to about 80 wt % of a thermoplastic resin based on a total solid content of the adhesive film, a phenolic curing agent, and an amine curing agent, and the adhesive film may have a storage modulus of about 2 MPa or more and a reaction curing rate of about 50% or more when cured at 150° C. for 20 minutes. | 2013-06-06 |
20130143364 | METHOD OF PROCESSING SOLDER BUMP BY VACUUM ANNEALING - A method includes vacuum annealing on a substrate having at least one solder bump to reduce voids at an interface of the at least one solder bump. A die is mounted over the substrate. | 2013-06-06 |
20130143365 | Resin Sealed Semiconductor Device And Manufacturing Method Therefor - A semiconductor device includes a thermoplastic resin case, a semiconductor chip mounted within the thermoplastic resin case, a metal terminal having a wire bonding surface and an opposing contact surface, and a wire connected between the wire bonding surface and the semiconductor chip. The contact surface of the metal terminal is thermoplastically bonded at an area to the inside of the thermoplastic resin case. | 2013-06-06 |
20130143366 | ALPHA SHIELDING TECHNIQUES AND CONFIGURATIONS - Embodiments of the present disclosure provide an apparatus including a semiconductor die having a plurality of integrated circuit devices, a pad structure electrically coupled to at least one integrated circuit device of the plurality of integrated circuit devices via an interconnect layer, an electrically insulative layer disposed on the interconnect layer, a first shielding structure disposed in the electrically insulative layer and electrically coupled to the pad structure, an under-ball metallization (UBM) structure electrically coupled to the first shielding structure, and a solder bump electrically coupled to the UBM structure, the solder bump comprising a solder bump material capable of emitting alpha particles, wherein the first shielding structure is positioned between the solder bump and the plurality of integrated circuit devices to shield the plurality of integrated circuit devices from the alpha particles. Other embodiments may be described and/or claimed. | 2013-06-06 |
20130143367 | METHODS OF FORMING 3-D CIRCUITS WITH INTEGRATED PASSIVE DEVICES - Methods of forming 3-D ICs with integrated passive devices (IPDs) include stacking separately prefabricated substrates coupled by through-substrate-vias (TSVs). An active device (AD) substrate has contacts on its upper portion. An isolator substrate is bonded to the AD substrate so that TSVs in the isolator substrate are coupled to the contacts on the AD substrate. An IPD substrate is bonded to the isolator substrate so that TSVs therein are coupled to an interconnect zone on the isolator substrate and/or TSVs therein. The IPDs of the IPD substrate are coupled by TSVs in the IPD and isolator substrates to devices in the AD substrate. The isolator substrate provides superior IPD to AD cross-talk attenuation while permitting each substrate to have small high aspect ratio TSVs, thus facilitating high circuit packing density and efficient manufacturing. | 2013-06-06 |
20130143368 | SEMICONDUCTOR DEVICE - A module including a carrier and a semiconductor chip applied to the carrier. An external contact element is provided having a first portion and a second portion extending perpendicular to the first portion, wherein a thickness of the second portion is smaller than a thickness of the carrier. | 2013-06-06 |
20130143369 | CHIP IDENTIFICATION FOR ORGANIC LAMINATE PACKAGING AND METHODS OF MANUFACTURE - A chip identification for organic laminate packaging and methods of manufacture is provided. The method includes forming a material on a wafer which comprises a plurality of chips. The method further includes modifying the material to provide a unique identification for each of the plurality of chips on the wafer. The organic laminate structure includes a chip with a device and a material placed on the chip which is modified to have a unique identification mark for the chip. | 2013-06-06 |
20130143370 | Logic Switch and Circuits Utilizing the Switch - A logic switch intentionally utilizes GIDL current as its primary mechanism of operation. Voltages may be applied to a doped gate overlying and insulated from a pn junction. A first voltage initiates GIDL current, and the logic switch is bidirectionally conductive. A second voltage terminates GIDL current, but the logic switch is unidirectionally conductive. A third voltage renders the logic switch bidirectionally non-conductive. Circuits containing the logic switch are also described. These circuits include inverters, SRAM cells, voltage reference sources, and neuron logic switches. The logic switch is primarily implemented according to SOI protocols, but embodiments according to bulk protocols are described. | 2013-06-06 |
20130143371 | DUAL-DEPTH SELF-ALIGNED ISOLATION STRUCTURE FOR A BACK GATE ELECTRODE - Doped semiconductor back gate regions self-aligned to active regions are formed by first patterning a top semiconductor layer and a buried insulator layer to form stacks of a buried insulator portion and a semiconductor portion. Oxygen is implanted into an underlying semiconductor layer at an angle so that oxygen-implanted regions are formed in areas that are not shaded by the stack or masking structures thereupon. The oxygen implanted portions are converted into deep trench isolation structures that are self-aligned to sidewalls of the active regions, which are the semiconductor portions in the stacks. Dopant ions are implanted into the portions of the underlying semiconductor layer between the deep trench isolation structures to form doped semiconductor back gate regions. A shallow trench isolation structure is formed on the deep trench isolation structures and between the stacks. | 2013-06-06 |
20130143372 | METHODS OF FORMING PATTERNS OF A SEMICONDUCTOR DEVICE - Methods of forming patterns of a semiconductor device are provided. The methods may include forming a hard mask film on a semiconductor substrate. The methods may include forming first and second sacrificial film patterns that are spaced apart from each other on the hard mask film. The methods may include forming a first spacer on opposing sidewalls of the first sacrificial film pattern and a second spacer on opposing sidewalls of the second sacrificial film pattern. The methods may include removing the first and second sacrificial film patterns. The methods may include trimming the second spacer such that a line width of the second spacer becomes smaller than a line width of the first spacer. The methods may include forming first and second hard mask film patterns by etching the hard mask film using the first spacer and the trimmed second spacer as an etch mask. | 2013-06-06 |
20130143373 | METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE - A method of manufacturing a nitride semiconductor device including: forming a nitride semiconductor layer over a substrate wherein the nitride semiconductor layer has a 2DEG channel inside; forming a drain electrode in ohmic contact with the nitride semiconductor layer and a source electrode spaced apart from the drain electrode, in Schottky contact with the nitride semiconductor layer, wherein the source electrode has an ohmic pattern in ohmic contact with the nitride semiconductor layer inside; forming a dielectric layer on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; and forming a gate electrode on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed on the dielectric layer over a drain-side edge portion of the source electrode. | 2013-06-06 |
20130143374 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD FOR GROWING GRAPHENE - A catalyst film ( | 2013-06-06 |
20130143375 | On Current in One-Time-Programmable Memory Cells - A method of fabricating a one-time programmable (OTP) memory cell with improved read current in one of its programmed states, and a memory cell so fabricated. The OTP memory cell is constructed with trench isolation structures on its sides. After trench etch, and prior to filling the isolation trenches with dielectric material, a fluorine implant is performed into the trench surfaces. The implant may be normal to the device surface or at an angle from the normal. Completion of the cell transistor to form a floating-gate metal-oxide-semiconductor (MOS) transistor is then carried out. Improved on-state current (I | 2013-06-06 |
20130143376 | CURRENT IN ONE-TIME-PROGRAMMABLE MEMORY CELLS - A method of fabricating a one-time programmable (OTP) memory cell with improved read current in one of its programmed states, and a memory cell so fabricated. The OTP memory cell is constructed with trench isolation structures on its sides. After trench etch, and prior to filling the isolation trenches with dielectric material, a fluorine implant is performed into the trench surfaces. The implant may be normal to the device surface or at an angle from the normal. Completion of the cell transistor to form a floating-gate metal-oxide-semiconductor (MOS) transistor is then carried out. Improved on-state current (I | 2013-06-06 |
20130143377 | STRUCTURE AND METHOD FOR REPLACEMENT GATE MOSFET WITH SELF-ALIGNED CONTACT USING SACRIFICIAL MANDREL DIELECTRIC - The present disclosure provides a method for forming a semiconductor device that includes forming a replacement gate structure overlying a channel region of a substrate. A mandrel dielectric layer is formed overlying source and drain regions of the substrate. The replacement gate structure is removed to provide an opening exposing the channel region of the substrate. A functional gate structure is formed over the channel region including a work function metal layer. A protective cap structure is formed over the functional gate structure. At least one via is etched through the mandrel dielectric layer selective to the protective cap structure to expose a portion of at least one of the source region and the drain region. A conductive fill is then formed in the vias to provide a contact to the at least one of the source region and the drain region. | 2013-06-06 |
20130143378 | METHOD OF FORMING POLYSILICON LAYER AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR USING THE POLYSILICON LAYER - In one aspect, a method of forming a polysilicon (poly-Si) layer and a method of manufacturing a thin film transistor (TFT) using the poly-Si layer is provided. In one aspect, the method of forming a polysilicon (poly-Si) layer includes forming an amorphous silicon (a-Si) layer on a substrate in a chamber; cleaning the chamber; removing fluorine (F) generated while cleaning the chamber; forming a metal catalyst layer for crystallization, on the a-Si layer; and crystallizing the a-Si layer into a poly-Si layer by performing a thermal processing operation. | 2013-06-06 |
20130143379 | LEAKAGE REDUCTION IN DRAM MIM CAPACITORS - A method for reducing the leakage current in DRAM MIM capacitors comprises forming a multi-layer dielectric stack from an amorphous highly doped material, an amorphous high band gap material, and a lightly or non-doped material. The highly doped material will remain amorphous (<30% crystalline) after an anneal step. The high band gap material will remain amorphous (<30% crystalline) after an anneal step. The lightly or non-doped material will become crystalline (≧30% crystalline) after an anneal step. The high band gap material is formed between the amorphous highly doped material and the lightly or non-doped material and provides an intermediate barrier to conduction through the multi-layer dielectric stack. | 2013-06-06 |
20130143380 | METHODS OF FORMING A PHASE CHANGE LAYER AND METHODS OF FABRICATING A PHASE CHANGE MEMORY DEVICE INCLUDING THE SAME - A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a minute structure, and the second phase change material layer pattern may fully fill the minute structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material. | 2013-06-06 |
20130143381 | ELECTRIC CIRCUIT CHIP AND METHOD OF MANUFACTURING ELECTRIC CIRCUIT CHIP - An electric circuit chip includes: a substrate made of glass or a semiconductor; and a circuit which is disposed in an inside of the substrate, has a first end portion and a second end portion exposed at specific surfaces of the substrate, and includes a spiral inductor. | 2013-06-06 |
20130143382 | METHOD OF FORMING MEMORY DEVICE - A variable resistance memory device, and a method of forming the same. The method may include forming a lower electrode on a substrate, stacking a first etch stop layer and a second etch stop layer on the substrate, forming an insulating layer on the second etch stop layer, forming a recessing region to expose the lower electrode by patterning the insulating layer and the first and second etch stop layer, forming a variable resistance material layer in the recess region, and forming an upper electrode on the variable resistance material layer. The first etch stop layer can have an etching selectivity with respect to the second etch stop layer. | 2013-06-06 |
20130143383 | METHOD OF FORMING AN ALD MATERIAL - In some embodiments of the present invention, methods are developed wherein a gas flow of an electron donating compound (EDC) is introduced in sequence with a precursor pulse and alters the deposition of the precursor material. In some embodiments, the EDC pulse is introduced sequentially with the precursor pulse with a purge step used to remove the non-adsorbed EDC from the process chamber before the precursor is introduced. In some embodiments, the EDC pulse is introduced using a vapor draw technique or a bubbler technique. In some embodiments, the EDC pulse is introduced in the same gas distribution manifold as the precursor pulse. In some embodiments, the EDC pulse is introduced in a separate gas distribution manifold from the precursor pulse. | 2013-06-06 |
20130143384 | HIGH PERFORMANCE DIELECTRIC STACK FOR DRAM CAPACITOR - A method for fabricating a DRAM capacitor stack is described wherein the dielectric material is a multi-layer stack formed from a highly-doped material combined with a lightly or non-doped material. The highly-doped material remains amorphous with a crystalline content of less than 30% after an annealing step. The lightly or non-doped material becomes crystalline with a crystalline content of equal to or greater than 30% after an annealing step. The dielectric multi-layer stack maintains a high k-value while minimizing the leakage current and the EOT value. | 2013-06-06 |
20130143385 | STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS - Embodiments relate to an improved tri-gate device having gate metal fills, providing compressive or tensile stress upon at least a portion of the tri-gate transistor, thereby increasing the carrier mobility and operating frequency. Embodiments also contemplate method for use of the improved tri-gate device. | 2013-06-06 |
20130143386 | METHOD OF FILLING SHALLOW TRENCHES - A method of filling shallow trenches is disclosed. The method includes: successively forming a first oxide layer and a second oxide layer over the surface of a silicon substrate where shallow trenches are formed in; etching the second oxide layer to form inner sidewalls with an etchant which has a high etching selectivity ratio of the second oxide layer to the first oxide layer; growing a high-quality pad oxide layer by thermal oxidation after the inner sidewalls are removed; and filling the trenches with an isolation dielectric material. By using this method, the risk of occurrence of junction spiking and electrical leakage during a subsequent process of forming a metal silicide can be reduced. | 2013-06-06 |
20130143387 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crystal silicon thin film is patterned to form an island-like silicon layer, and then, a thermal oxidation treatment is carried out in an oxidizing atmosphere containing a halogen element, so that an island-like silicon layer in which the trap levels and the defects are removed is obtained. | 2013-06-06 |
20130143388 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes forming a starting-point crack on a cleavage line on a surface of a semiconductor substrate; forming preliminary cracks intermittently along the cleavage line on the surface of the semiconductor substrate; and cleaving the semiconductor substrate along the cleavage line passing through the preliminary cracks, from the starting-point crack, wherein each of the preliminary cracks has a crack joining the cleavage line from outside of the cleavage line, in a direction of a progress of cleaving. | 2013-06-06 |
20130143389 | CONTROLLED PROCESS AND RESULTING DEVICE - A method for forming a multi-material thin film includes providing a multi-material donor substrate comprising single crystal silicon and an overlying film comprising GaN. Energetic particles are introduced through a surface of the multi-material donor substrate to a selected depth within the single crystal silicon. The method includes providing energy to a selected region of the donor substrate to initiate a controlled cleaving action in the donor substrate. Then, a cleaving action is made using a propagating cleave front to free a multi-material film from a remaining portion of the donor substrate, the multi-material film comprising single crystal silicon and the overlying film. | 2013-06-06 |
20130143390 | DICING/DIE BONDING INTEGRAL FILM, DICING/DIE BONDING INTEGRAL FILM MANUFACTURING METHOD, AND SEMICONDUCTOR CHIP MANUFACTURING METHOD - A dicing/die bonding integral film of the present invention includes a base film, a pressure-sensitive adhesive layer which is formed on the base film and to which a wafer ring for blade dicing is bonded, and a bonding layer formed on the adhesive layer and having a central portion to which a semiconductor wafer to be diced is bonded, wherein a planar shape of the bonding layer is circular, an area of the bonding layer is greater than an area of the semiconductor wafer and smaller than an area of each of the base film and the adhesive layer, and a diameter of the bonding layer is greater than a diameter of the semiconductor wafer and less than an inner diameter of the wafer ring, and a difference in diameter between the bonding layer and the semiconductor wafer is greater than 20 mm and less than 35 mm, | 2013-06-06 |
20130143391 | REACTED LAYER FOR IMPROVING THICKNESS UNIFORMITY OF STRAINED STRUCTURES - Methods are disclosed of forming and removing a reacted layer on a surface of a recess to provide mechanisms for improving thickness uniformity of a semiconductor material formed in the recess. The improved thickness uniformity in turn improves the uniformity of device performance. | 2013-06-06 |
20130143392 | IN-SITU SIN GROWTH TO ENABLE SCHOTTKY CONTACT FOR GAN DEVICES - A method of fabricating a diode in gallium nitride (GaN) materials includes providing a n-type GaN substrate having a first surface and a second surface and forming a n-type GaN drift layer coupled to the first surface of the n-type GaN substrate. The method also includes forming an in-situ Si | 2013-06-06 |