22nd week of 2013 patent applcation highlights part 13 |
Patent application number | Title | Published |
20130134320 | NUCLEAR REACTOR FUEL INTEGRITY MONITOR - A nuclear reactor fuel integrity monitor includes: a γ-ray detector which detects γ-ray of a specific radionuclide of a subject measurement medium of a nuclear reactor; a sample container which retains the subject measurement medium therein and surrounds the circumference of the γ-ray detector; and a measurement control device which performs a control so that a predetermined amount of the subject measurement medium is introduced into the sample container and calculates a concentration of the specific radionuclide from γ-ray data per each unit time detected by the γ-ray detector and a volume of the subject measurement medium introduced into the sample container. | 2013-05-30 |
20130134321 | DETECTOR FOR ENERGETIC SECONDARY ELECTRONS - The present invention relates to a high-energy secondary electron detector comprising a collector P supporting only three electrodes that are insulated from one another and that are biased relative to the collector:
| 2013-05-30 |
20130134322 | ELECTRON LENS AND THE ELECTRON BEAM DEVICE - There provided a device for effectively drawing a fine pattern using a permanent magnet. The device has an outer cylinder | 2013-05-30 |
20130134323 | Electron Beam Profile Measurement System and Method with Optional Faraday Cup - Electron beam profile testing and analysis method is introduced using the MOMS apparatus. The MOMS apparatus includes a Faraday Cup with a knife-wires scanning system which together perform simultaneous measurements. The scanning system has a five-dimensional processing mechanism for measuring different cross sections of an e-beam profile in a path of the e-beam. Measurements are conducted using the scanning system by virtually dividing each cross section into a plurality of subsections and measuring independent current values of at least one wire of the scanning system through which the electron beam passes from every pixel in each of the plurality of subsections. By providing relative movement between the scanning system and e-beam, the measured independent current values are analyzed to obtain the functional form of distribution of current density of the cross-section of the e-beam. The Faraday cup enables simultaneous measurement of the total value of the current. | 2013-05-30 |
20130134324 | COMPACT HIGH-VOLTAGE ELECTRON GUN - One embodiment relates to a high-voltage electron gun including an insulator stand-off having a resistive layer. The resistive layer is at least on an interior surface of the insulator stand-off. A cathode holder is coupled to one end of the insulator 115 stand-off, and an anode is coupled to the other end. The resistive layer advantageously increases the surface breakdown field strength for the insulator stand-off and so enables a compact design for the high-voltage electron gun. Other embodiments, aspects and feature are also disclosed. | 2013-05-30 |
20130134325 | Ion Beam Processing System and Sample Processing Method - An ion beam processing system ( | 2013-05-30 |
20130134326 | EXTREME ULTRAVIOLET LIGHT GENERATION APPARATUS, TARGET COLLECTION DEVICE, AND TARGET COLLECTION METHOD - A target collection device may include a collection container having an opening through which a target material is collected into the collection container, and a temperature adjuster configured to adjust a temperature of the collection container to a temperature that is equal to or higher than a melting point of the target material. The target collection device may be part of an extreme ultraviolet light generation apparatus. Methods of target collection are also provided. | 2013-05-30 |
20130134327 | METHOD AND SYSTEM FOR REDUCING DEVICE PERFORMANCE DEGRADATION OF ORGANIC DEVICES - Methods and systems for reducing the deleterious effects of gate bias stress on the drain current of an organic device, such as an organic thin film transistor, are provided. In a particular aspect, the organic layer of an organic device is illuminated with light having characteristics selected to reduce the gate bias voltage effects on the drain current of the organic device. For instance, the wavelength and intensity of the light are selected to provide a desired recovery of drain current of the organic device. If the characteristics of the light are appropriately matched to the organic device, recovery of the deleterious effects caused by gate bias voltage stress effects on the drain current of the organic device can be achieved. In a particular aspect, the organic device is selectively illuminated with light to operate the organic device in multiple modes of operation. | 2013-05-30 |
20130134328 | PROCESSING SYSTEM - A processing system includes a particle beam column for generating a particle beam directed to a first processing location; a laser system for generating a laser beam directed to a second processing location located at a distance from the first processing location; and a protector including an actuator and a plate connected to the actuator. The actuator is configured to move the plate between a first position in which it protects a component of the particle beam column from particles released from the object by the laser beam and a second position in which the component of the particle beam column is not protected from particles released from the object by the laser beam. | 2013-05-30 |
20130134329 | CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD - A charged particle beam writing apparatus according to an embodiment, includes a dose coefficient calculation unit to calculate an n-th dose correction coefficient in iterative calculation of a charged particle beam to be shot in a small region concerned by the iterative calculation, for each small region of small regions made by virtually dividing into mesh-like regions, a change rate calculation unit to calculate, for each small region, a rate of change from an (n-1)th dose correction coefficient to the n-th dose correction coefficient calculated in the iterative calculation, as an n-th change rate, a correction calculation unit to correct, for each small region, the n-th dose correction coefficient by using the n-th change rate, and a dose calculation unit to calculate, for each small region, a dose of a charged particle beam to be shot in a small region concerned by using the n-th dose correction coefficient corrected. | 2013-05-30 |
20130134330 | HOLDER DEVICE, CHAMBER APPARATUS, AND EXTREME ULTRAVIOLET LIGHT GENERATION SYSTEM - A holder device for holding an optical element includes a holder having first and second members to sandwich the optical element therebetween, and a sealing member for creating a seal between the second member and the optical element. | 2013-05-30 |
20130134331 | Ion Beam Sample Preparation Thermal Management Apparatus and Methods - Disclosed are embodiments of an ion beam shield for use in an ion beam sample preparation apparatus and methods for using the embodiments. The apparatus comprises an ion beam irradiating means in a vacuum chamber that may direct ions toward a sample, a shield blocking a portion of the ions directed toward the sample, and a shield retention stage with shield retention means that replaceably and removably holds the shield in a position. The ion beam shield has datum features which abut complementary datum features on the shield retention stage when the shield is held in the shield retention stage. The shield has features which enable the durable adhering of the sample to the shield for processing the sample with the ion beam. The complementary datum features on both shield and shield retention stage enable accurate and repeatable positioning of the sample in the apparatus for sample processing and reprocessing. | 2013-05-30 |
20130134332 | SHIELD AND METHOD FOR USING SAME - A radiation shield for use in connection with computed tomography (CT) calcium scoring of a target area of a patient is provided. The shield is configured for placement over the target area and over one or more radiosensitive secondary areas adjacent to the target area such that x-rays are transmitted through the radiation shield and the target area for detection by an x-ray detector. The detected radiation can be processed for use in a calcium scoring procedure. The radiation shield is configured to reduce radiation exposure of the radiosensitive secondary areas during the calcium scoring procedure without substantially reducing the accuracy of the calcium score associated with the target area. | 2013-05-30 |
20130134333 | FAILSAFE APPARATUS FOR USE WITH LINEAR ACTUATORS - Failsafe apparatus for use with linear actuators are disclosed. A failsafe apparatus for use with a linear actuator includes a spring to urge a first stem of a device to be operated by the linear actuator toward a failsafe position and a clutch to operatively couple a second stem of the linear actuator to the first stem. The clutch includes a frame coupled to one of the first stem or the second stem and jaws moveably coupled to the frame. The jaws are to engage the other one of the first stem or the second stem to enable the linear actuator to operate the device and to disengage the other one of the first stem or the second stem to enable the spring to move the first stem toward the failsafe position. | 2013-05-30 |
20130134334 | VALVE ACTUATOR - The valve actuator ( | 2013-05-30 |
20130134335 | Method and Device for Controlling a Valve - A method for controlling a valve including a spring, an actuator having an actuator force opposing the spring, and a pin actuatable by the actuator. To open the valve, in a first operating mode a current having a predefined curve is applied to the actuator, starting from a starting value of the current at which the pin is positioned to allow the valve to close, measured values of the current are determined chronologically sequentially, a reference value of the current takes on the current measured value of the current when the measured current deviates from the applied current by a predefined degree. In a second operating mode, a current having a predefined curve is applied to the actuator, starting with the starting value of the current to a final value of the current at which the pin is in a position that prevents the valve from closing. | 2013-05-30 |
20130134336 | ELECTRIC THREE-WAY VALVE - An electric three-way valve comprises: an input port, a plurality of output ports and a valve core which rotates in a sliding manner in the valve seat by a driving force of a motor unit, wherein the valve core selectively opens or closes the plurality of output ports, the motor unit is attached as a separated constituent to an outside of an upper end surface of a cylindrical casing introducing refrigerant, the valve core is driven by a gear unit which transmits the driving force of the motor unit and is disposed inside the cylindrical casing, the cylindrical casing includes one opening portion and a side wall with an apex portion, a housing which is fixed to a cylindrical wall portion of the apex portion and is equipped with the motor unit is uprightly formed in the other opening portion, and the housing is attached to the cylindrical casing. | 2013-05-30 |
20130134337 | SOLENOID VALVE - A solenoid valve comprises a first mouth for an inlet of a working fluid and a second mouth and a third mouth for an outlet of the working fluid. The valve has a first operating position in which a passage of fluid from the first mouth to the second mouth and the third mouth is enabled, a second operating position in which a passage of fluid from the first mouth to only one of the second and third mouths is enabled, and a third operating position in which the passage of fluid from the first to the second mouth and the third mouth is disabled. | 2013-05-30 |
20130134338 | VALVE TIMING CONTROLLER - A valve timing controller has a control valve and a linear solenoid. The control valve is disposed in an interlocking rotor constructed by a vane rotor and a camshaft. The linear solenoid includes a movable member having an output shaft, and a bearing portion supporting the movable member to reciprocate and rotate. A spool of the control valve is contact with the output shaft. The output shaft contacts a sphere-shaped end surface of the spool, at a contact position offset in a radial direction from a center axis of the spool. | 2013-05-30 |
20130134339 | ELECTROMAGNETIC VALVE - An electromagnetic valve includes a flow passage, a valve member, an actuator having a coil and a movable core, an intermediate member, a connecting member, a housing, and a dividing unit. The housing includes a hollow part between the housing and the actuator. The hollow part communicates with the flow passage. The dividing unit includes a through hole which passes through the dividing unit in its axial direction. The dividing unit divides the hollow part between a communicating chamber that is capable of communicating with the flow passage, and a cancel chamber that is cut off from an outside thereof. The intermediate member includes a communicating passage between the intermediate member and the movable core. The communicating passage communicates between the flow passage and the cancel chamber via the through hole and the communicating chamber. | 2013-05-30 |
20130134340 | PNEUMATIC CONTROL DEVICE OPERATED BY ONE HAND - A pneumatic control device includes a direction control rod, which is connected to a power switch device for activating and shutting off the power switch device. When the direction control rod is in the positive position, the first direction control valve is activated to drive a pneumatic power device. The pneumatic power device drives a hydraulic power tool to move in positive direction. The first direction control valve is shut-off and the second direction control valve is activated when the direction control rod is moved to the opposite position. The activated second direction control valve drives the pneumatic power device; the pneumatic power device drives the hydraulic power tool to move in opposite direction. When the direction control rod is moved to the opposite position, the activated power switch device is relieved and automatically shut off to stop supplying power to the hydraulic power tool. | 2013-05-30 |
20130134341 | Hydraulic rotary valve - A hydraulic rotary valve comprises a valve body formed with a plurality of outer ports and a spool rotatably disposed in the valve body, and the spool is formed with a plurality of inner ports. The spool is capable of rotating at least three angles with respect to the spool to enable the respective outer ports of the valve body to be in or not in communication with the respective inner ports of the spool, thus making the hydraulic liquid flow in desired directions to control predetermined motions of an actuator. The hydraulic rotary valve is easy to manufacture, and has less leakage and less pressure loss problem. | 2013-05-30 |
20130134342 | GAS SAFETY VALVE - The present invention is a gas safety valve utilized in combination with an existing carbon monoxide protection system that includes one or more carbon monoxide detectors to detect carbon monoxide in an area protected by the existing carbon monoxide protection system, a signal wire system, a breaker box, a gas meter box, a notification system, a primary gas line and a back-up power source. The gas safety valve is a ball valve that is integral to the primary gas line that is in communication with the carbon monoxide detectors with an electrical signal line that transmits a low voltage electronic signal to the gas safety valve when carbon monoxide is detected. | 2013-05-30 |
20130134343 | BALL VALVE - A ball valve is provided for threaded connection to a separable component | 2013-05-30 |
20130134344 | VALVE FOR AN INFLATABLE STRUCTURE - A valve comprising a valve body having an inlet and an outlet; a valve member moveable in a linear direction with respect to the valve body between a closed condition in which flow between the inlet and the outlet is restricted and an open condition; and an actuator coupled to the valve member such that the valve member is constrained to rotate with the actuator and is movable in the linear direction with respect to the actuator, wherein the valve is configured such that rotation of the actuator causes the valve member to move in the linear direction with respect to both the actuator and the valve body between the closed condition and the open condition. | 2013-05-30 |
20130134345 | VALVE WITH A VALVE BONNET - A valve comprising a valve housing with a valve bonnet, an inlet opening and an outlet opening, the valve bonnet having a passage for a valve stem, the passage having a sidewall and the valve stem comprising a valve disk for closing the valve by bringing the valve disk in contact with a valve seat in the valve housing, the passage in the valve bonnet comprising at least a first section with a first cross sectional area and a second section with a second cross sectional area that is smaller than the first cross sectional area. The sidewall in the passage is in direct contact with the valve stem at the second section with the second cross sectional area. | 2013-05-30 |
20130134346 | CONTROL STRUCTURE OF WALL-MOUNTED FAUCET - A control structure of a wall-mounted faucet includes a water outlet and a control device, wherein the control device has a control stick, a valve block, a sealing unit and a resilient unit, wherein the control stick is disposed through a through hole of the water outlet, and the valve block has two clamping ribs protrudingly located at front side of the valve block, and the clamping ribs clamp the control stick. A connecting surface is located on top of the clamping ribs, and the resilient unit covers the control stick, wherein both ends of the resilient unit are against the stopping surface of the water outlet and the connecting surface of the valve block. So, the control stick is pushed by the resilient unit to drive the valve block to escape the valve of the water outlet to avoid the water unexpectedly spraying out from the showerhead. | 2013-05-30 |
20130134347 | Composite Structures with Phase Change Material and Adsorbent and Encapsulant Materials - A composite structure providing heat storage capability and including a phase change material (PCM), adsorbent material and encapsulant material. The encapsulate material surrounds the PCM and adsorbent. The phase change material and adsorbent material and encapsulant material can be provided in a mixture which is subsequently formed into a structural panel. The composite structure may be used to provide passive thermal control. A method of making composite structures having PCM, adsorbent material and encapsulant materials is also provided. | 2013-05-30 |
20130134348 | Magnetic Materials and Systems - A material is disclosed. The material includes a magnetic material. The magnetic material exhibits a metamagnetic transition to a magnetic saturation at an applied magnetic field of strength less than or equal to 1 T, in which a transition temperature of the magnetic material is within a temperature region from about 160 K to about 350K. | 2013-05-30 |
20130134349 | Positive Electrode Active Material for Lithium-Ion Battery and Lithium-Ion Battery - Provided is a lithium ion battery wherein the content of an iron element contained in a positive electrode active material (measured with an ICP emission spectrophotometer) is 10 ppm or more, and magnetic materials having a size of 0.70 times or greater than the thickness of a separator layer are substantially not included in order to provide a lithium ion battery which has small voltage drop during a charge state or under storage at high temperatures. | 2013-05-30 |
20130134350 | STABILIZED ORGANOMETALLIC REAGENTS - Compositions of stabilized forms of organometallic reagents, methods of preparing the stabilized forms, and methods of using the stabilized forms, are provided. Stabilized organometallic reagent compositions of the invention are sorbent solids permeated by the organometallic reagent. The reagent can be a Grignard reagent, a Reformatsky reagent, a zinc reagent of the type RZnX, R | 2013-05-30 |
20130134351 | BIOMASSES FOR THE PRODUCTION OF ALTERNATIVE PETROCHEMICAL FEEDSTOCK - Systems and methods for the recomposition and conversion of biomasses to alternative petrochemical feedstock are herein disclosed. According to one embodiment, a process involves reducing the particle size of at least one constituent of a biomass feedstock, removing at least one constituent from the biomass feedstock and adding at least one constituent to the biomass feedstock. | 2013-05-30 |
20130134352 | LIQUID CRYSTAL COMPOSITION, LIQUID CRYSTAL ELEMENT, AND LIQUID CRYSTAL DISPLAY DEVICE - Provided is a novel liquid crystal composition that can be used for a variety of liquid crystal devices. The novel liquid crystal composition exhibits a blue phase and includes a binaphthyl compound represented by a general formula (G1) as a chiral agent. In the general formula (G1), Ar | 2013-05-30 |
20130134353 | DIOXOLANE COMPOUND, LIQUID CRYSTAL COMPOSITION, LIQUID CRYSTAL ELEMENT, AND LIQUID CRYSTAL DISPLAY DEVICE - A novel dioxolane compound represented by the general formula (G1) is provided. In the general formula (G1), R | 2013-05-30 |
20130134354 | POLYMERIZABLE COMPOUND - The invention provides a compound having two polymerizable groups, wherein one is bonded directly to the ring and the other is bonded to the ring through a spacer, as a compound in which the polymerizability is not decreased and the solubility is high in a liquid crystal composition. A compound represented by formula (1), wherein | 2013-05-30 |
20130134355 | LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - The invention provides a liquid crystal composition satisfying at least one of characteristics such as a high maximum temperature of a nematic phase, a low minimum temperature of the nematic phase, a small viscosity, a large optical anisotropy, a large positive dielectric anisotropy, a large specific resistance, a high stability to ultraviolet light and a high stability to heat, or provides a liquid crystal composition having a suitable balance regarding at least two of the characteristics. A liquid crystal display device containing such a liquid crystal composition is applied as an AM device having a short response time, a large voltage holding ratio, a large contrast ratio, a long service life and so forth, and thus can be suitably used for a liquid crystal projector, a liquid crystal television and so forth. | 2013-05-30 |
20130134356 | Combined Chemiluminescent and Fluorescent Powder Marking System - The present disclosure relates to a powder composition comprising both chemiluminescent and fluorescent components. In some embodiments, the disclosure provides a marking system, which is in powder form, comprising at least one oxalate ester, at least one fluorescer, at least one peroxide, at least one catalyst, and at least one secondary fluorescent agent. In accordance with the present disclosure, the at least one oxalate ester, the at least one fluorescer, the at least one peroxide, and the at least one catalyst are admixed at the time of use for the generation of light. In certain embodiments, the chemiluminescent components emit light in the visible, ultra-violet, or infrared spectrum as the result of a chemical reaction, and the secondary fluorescent components can be selected for their ability to absorb at least some of the light generated by the chemiluminescent components, and then reemit light at a different wavelength. | 2013-05-30 |
20130134357 | Concentrate for Medical Solutions, Production Thereof and Use Thereof in Dialysis - The present invention relates to a novel dry concentrate for producing medical solutions, more particularly dialysis solutions, which comprises electrolyte components, buffer components and an osmotic agent, wherein the concentrate comprises magnesium carbonate instead of magnesium chloride. The use of magnesium carbonate as an electrolyte prevents the formation of slurries. By providing anhydrous glucose as an osmotic agent, and by optionally spatially separating this osmotic agent from other components, the occurrence of caking of the concentrate is additionally avoided. The occurrence of caking is further reduced by providing the buffer component sodium bicarbonate together with sodium chloride separate from all other components. The concentrate of the present invention is particularly suitable for use in multi-chamber container bag systems. The concentrate of the present invention exhibits good dissolution behaviour and improved storage stability. | 2013-05-30 |
20130134358 | DRY BOTTOM REACTOR VESSEL AND METHOD - A reactor vessel includes an entrained-flow gasifier and a dry solids discharge beneath the gasifier. | 2013-05-30 |
20130134359 | ULTRA HIGH TEMPERATURE SHIFT CATALYST WITH LOW METHANATION - A catalytic water gas shift process at temperatures above about 450° C. up to about 900° C. or so wherein the catalyst includes rhenium deposited on a support, preferably without a precious metal, wherein the support is prepared from a high surface area material, such as a mixed metal oxide, particularly a mixture of zirconia and ceria, to which may be added one or more of a high surface area transitional alumina, an alkali or alkaline earth metal dopant and/or an additional dopant selected from Ga, Nd, Pr, W, Ge, Fe, oxides thereof and mixtures thereof. | 2013-05-30 |
20130134360 | METHOD FOR PRODUCING ORGANIC ELECTROLUMINESCENCE ELEMENT, AND ORGANIC ELECTROLUMINESCENCE ELEMENT - A method for producing a luminescent organic film, the method including: coating a solution containing a π-electron conjugated compound precursor A-(B)m and at least one kind of a luminescent dye, where the π-electron conjugated compound precursor A-(B)m contains a leaving substituent; and applying external stimulus to the π-electron conjugated compound precursor A-(B)m to eliminate the leaving substituent thereof, so that the π-electron conjugated compound precursor A-(B)m is converted to a π-electron conjugated compound A-(C)m and an eliminated compound X—Y as in the following reaction formula (I): | 2013-05-30 |
20130134361 | GRAPHENE BALL STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A graphene dot structure and a method of manufacturing the same. The graphene dot structure includes a core including a semiconductor material; and a graphene shell formed on the surface of the core. The graphene dot structure may form a network. | 2013-05-30 |
20130134362 | CATHODE MATERIAL FOR SECONDARY BATTERY AND MANUFACTURING METHOD OF THE SAME - Disclosed are a cathode material for a secondary battery, and a manufacturing method of the same. The cathode material includes a lithium manganese phosphate LiMnPO | 2013-05-30 |
20130134363 | PASTE COMPOSITION FOR SOLAR CELL ELECTRODE, ELECTRODE FABRICATED USING THE SAME, AND SOLAR CELL INCLUDING THE SAME - A paste composition for solar cell electrodes includes conductive particles, a glass frit, an organic binder and a solvent. The conductive particles include at least two groups of conductive particle having different particle diameter distributions. The conductive particle may have an average particle diameter (D50′) of about 1.85 μm or less and a particle diameter (D90′) at 90% of the cumulative particle diameter distribution of about 3.10 μm or less. | 2013-05-30 |
20130134364 | ELECTRICALLY CONDUCTIVE NANOCOMPOSITE MATERIAL - An electromagnetically active composite has an electrically-nonconductive host matrix and electrically-conductive nanostrand bodies embedded in a substantially uniform distribution throughout the host matrix. Each of the nanostrand bodies comprises a volume containing at least one nanostrand of filamentary metal. Adjacent nanostrand bodies that are sufficiently mutually proximate will interact electromagnetically with each other. The filamentary metal of the one or more nanostrands in each of the nanostrand bodies occupies a deminimus fraction of the overall volume occupied by the at least one nanostrand that comprises each of the nanostrand bodies. The filamentary metal is chosen from among the group of metals that includes nickel, nickel aluminides, iron, iron aluminides, alloys of nickel and iron, and alloys of nickel and copper. Individual nanostrands of the nanostrand bodies have an average diameter in a range of from about 10 nanometers to about 4000 nanometers, and the average diameter of the nanostrand bodies is in a range of from about one micron to about 3000 microns. | 2013-05-30 |
20130134365 | USE OF 2-((1-METHYLPROPYL)AMINO)ETHANOL AS ADDITIVE IN AQUEOUS SUSPENSIONS OF CALCIUM CARBONATE-COMPRISING MATERIALS - Use of 2-((1-methylpropyl)amino)ethanol as an additive in an aqueous suspension, containing from 25 to 62 vol. % of at least one calcium carbonate-comprising material, wherein the use provides improved stability with regard to the conductivity of the suspension. | 2013-05-30 |
20130134366 | Simultaneous Optimization of Absorption and Emission of Nanocrystals - The present invention relates to semiconductor nanocrystals having, simultaneously, an emission center surrounded by at least one absorbing shell and a protective exterior shell. | 2013-05-30 |
20130134367 | ELECTRIC INSULATING OIL INSPECTION METHOD, ELECTRIC INSULATING OIL TREATMENT METHOD, AND OIL-FILLED ELECTRIC DEVICE MAINTENANCE METHOD - The present invention relates to an electric insulating oil inspection method for determining whether or not an inhibitor-consuming substance is present in an electric insulating oil. The inhibitor-consuming substance is such a substance that causes to decrease over time a concentration of an inhibitor which is added to the electric insulating oil to inhibit copper sulfide from being generated on an insulating paper immersed in the electric insulating oil. The electric insulting oil inspection method includes steps of: preserving the electric insulating oil at a predetermined condition, measuring a concentration of the inhibitor, and determining that the inhibitor-consuming substance is present upon condition that a decrement of the concentration of the inhibitor relative to an initial concentration of the inhibitor becomes not less than a specified amount within a predetermined period. | 2013-05-30 |
20130134368 | ORGANIC-INORGANIC COMPOSITE MATERIAL AND PRODUCTION PROCESS THEREOF, AND OPTICAL ELEMENT - The invention provides an organic-inorganic composite material having a sufficient transparency and a low coefficient of linear expansion, an optical element using the same and a production process thereof. The organic-inorganic composite material has at least one polymer compound and at least one inorganic oxide having a three-dimensional network structure, wherein the polymer compound has a three-dimensional network structure and is covalently bonded to the inorganic oxide, and the haze value of the organic-inorganic composite material in terms of a thickness of 5 mm is 10% or less. | 2013-05-30 |
20130134369 | METHOD AND APPARATUS FOR PROVIDING TEMPORARY SUPPORT AND A MEANS FOR RELOCATING ENERGIZED ELECTRICAL CONDUCTORS - A temporary support and conductor re-locator includes a mounting arm and corresponding mounting bracket on one end of the arm, the other end supporting a pivotally mounted insulator depending downwardly from a crank arm. The upper end of the crank arm is attached to an actuator which, upon actuation, pivots the crank arm and insulator about the end of the support arm so as to rotate up and out of the way an energized conductor contained in the wire holder at the bottom end of the insulator. The support arm is temporarily mounted to an existing transmission line tower or pole so as to extend outwardly substantially horizontally therefrom thereby cantilevering outwardly of the tower the end of the arm supporting the crank arm and insulator. Actuation of the actuator firstly elevates a lower portion of the crank arm then rotates the crank arm about the cantilevered end of the support arm. | 2013-05-30 |
20130134370 | CABLE PULLING GRIP HAVING TOOLLESS REMOVAL - A combination of a pulling grip assembly and a fiber optic cable assembly for installing the fiber optic cable, including:
| 2013-05-30 |
20130134371 | PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A phase-change random access memory (PCRAM) device includes a semiconductor substrate; switching elements formed on the semiconductor substrate; a plurality of phase-change structures formed on the switching elements; and heat absorption layers buried between the plurality of phase-change structures, wherein the plurality of phase-change structures are insulated from the heat absorption layers. | 2013-05-30 |
20130134372 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor device includes first to n-th semiconductor layers (n is a natural number equal to or more than 2) being stacked in order from a surface of an insulating layer in a first direction perpendicular to the surface of the insulating layer, the first to n-th semiconductor layers extending in a second direction parallel to the surface of the insulating layer, the first to n-th semiconductor layers being insulated from each other, a common electrode connected to the first to n-th semiconductor layers in a first end of the second direction thereof, and a layer select transistor which uses the first to n-th semiconductor layers as channels and which selects one of the first to n-th semiconductor layers. | 2013-05-30 |
20130134373 | NONVOLATILE RESISTIVE MEMORY ELEMENT WITH A NOVEL SWITCHING LAYER - A nonvolatile resistive memory element has a novel variable resistance layer comprising one or more rare-earth oxides. The rare-earth oxide has a high k value, a high bandgap energy, and the ability to maintain an amorphous structure after thermal anneal processes. Thus, the novel variable resistance layer facilitates improved switching performance and reliability of the resistive memory element. | 2013-05-30 |
20130134374 | VARIABLE RESISTOR, NON-VOLATILE MEMORY DEVICE USING THE SAME, AND METHODS OF FABRICATING THE SAME - A variable resistor, a nonvolatile memory device and methods of fabricating the same are provided. The variable resistor includes an anode electrode and a cathode electrode, a variable resistive layer including CdS nanoscale particles provided between the anode electrode and the cathode electrode, and an initial metal atom diffusion layer within the variable resistive layer. The variable resistor is a bipolar switching element and configured to be in a reset state when a positive voltage relative to a cathode electrode is applied to the anode electrode, and configured to be in a set state when a negative voltage relative to the cathode electrode is applied to the anode electrode. | 2013-05-30 |
20130134375 | SEMICONDUCTOR DEVICE STRUCTURES COMPRISING CRYSTALLINE Pr1-xCaxMnO3 (PCMO) MATERIAL AND METHODS OF FORMING CRYSTALLINE PCMO MATERIAL - A method of forming a crystalline Pr | 2013-05-30 |
20130134376 | ATOMIC LAYER DEPOSITION OF ZIRCONIUM OXIDE FOR FORMING RESISTIVE-SWITCHING MATERIALS - Atomic layer deposition (ALD) can be used to form a dielectric layer of zirconium oxide for use in a variety of electronic devices. Forming the dielectric layer includes depositing zirconium oxide using atomic layer deposition. A method of atomic layer deposition to produce a metal-rich metal oxide comprises the steps of providing a silicon substrate in a reaction chamber, pulsing a zirconium precursor for a predetermined time to deposit a first layer, and oxidizing the first layer with water vapor to produce the metal-rich metal oxide. The metal-rich metal oxide has superior properties for non-volatile resistive-switching memories. | 2013-05-30 |
20130134377 | SEMICONDUCTOR MEMORY DEVICE HAVING THREE-DIMENSIONALLY ARRANGED RESISTIVE MEMORY CELLS - Semiconductor memory devices are provided. The device may include may include first and second selection lines connected to each other to constitute a selection line group, a plurality of word lines sequentially stacked on each of the first and second selection lines, vertical electrodes arranged in a row between the first and second selection lines, a plurality of bit line plugs arranged in a row at each of both sides of the selection line group, and bit lines crossing the word lines and connecting the bit line plugs with each other. | 2013-05-30 |
20130134378 | VARIABLE-RESISTANCE MATERIAL MEMORIES AND METHODS - Variable-resistance memory material cells are contacted by vertical bottom spacer electrodes. Variable-resistance material memory spacer cells are contacted along the edge by electrodes. Processes include the formation of the bottom spacer electrodes as well as the variable-resistance material memory spacer cells. Devices include the variable-resistance memory cells. | 2013-05-30 |
20130134379 | RESISTIVE MEMORY USING SIGE MATERIAL - A resistive memory device includes a first electrode; a second electrode having a polycrystalline semiconductor layer that includes silicon; a non-crystalline silicon structure provided between the first electrode and the second electrode. The first electrode, second electrode and non-crystalline silicon structure define a two-terminal resistive memory cell. | 2013-05-30 |
20130134380 | UPWARDLY TAPERING HEATERS FOR PHASE CHANGE MEMORIES - A substantially planar heater for a phase change memory may taper as it extends upwardly to contact a chalcogenide layer. As a result, the contact area between heater and chalcogenide is reduced. This reduced contact area can reduce power consumption in some embodiments. | 2013-05-30 |
20130134381 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method of manufacturing a semiconductor device and a semiconductor device made by the method is disclosed. The method comprises forming a buried N+ layer in an upper portion of a P-type substrate; performing ion implantation on the buried N+ layer; annealing the buried N+ layer; forming an epitaxial semiconductor layer on the buried N+ layer through epitaxial deposition, wherein, an upper portion of said epitaxial semiconductor layer and a portion underlying said P+ region of said epitaxial semiconductor layer are doped to form a P+ region and an N− region, respectively. Increasing the ion implant dosage of the BNL layer, adjusting the method of annealing the BNL layer to increase the width of the BNL layer, or increasing the thickness of the EPI layer, reduces the vertical BJT current gain and suppressed the substrate leakage current. | 2013-05-30 |
20130134382 | Selector Device for Memory Applications - The present disclosure is related to a selector device for memory applications. The selector device for selecting a memory element in a memory array comprises an MIT element and a decoupled heater, thermally linked to the MIT element. The MIT element comprises a MIT material component and a barrier component and is switchable from a high to a low resistance state by heating the MIT element above a transition temperature with the decoupled heater. The barrier component is provided to increase the resistance of the MIT element in the high resistance state. | 2013-05-30 |
20130134383 | NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A non-volatile memory device and a method of manufacturing the same are provided. A first portion stack having a first circuit element including at least one layer selected from at least one diode layer, at least one variable resistive layer, and interconnection layer is formed on a first substrate. A second portion stack having a second circuit element including at least the other layer selected from the at least one diode layer, the at least variable resistive layer, and the at least interconnection layer is formed on a second substrate. The first circuit element and the second circuit element are bonded together and the second substrate is removed. | 2013-05-30 |
20130134384 | METHOD OF POST TREATING GRAPHENE AND METHOD OF MANUFACTURING GRAPHENE USING THE SAME - Provided is a method of post treating graphene including providing graphene on a metal thin film, providing a carrier on the graphene, hardening the carrier, and removing the metal thin film from the graphene. | 2013-05-30 |
20130134385 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, in a semiconductor light emitting device, a semiconductor laminated body is made by laminating, in order, a first semiconductor layer of a first conductivity-type, a semiconductor light emitting layer and a second semiconductor layer of a second conductivity-type. The semiconductor laminated body includes a plurality of trenches arranged in a periodical manner to penetrate through the second semiconductor layer and the semiconductor light emitting layer and reach the first semiconductor layer. An insulating film is buried into the trenches, and has transparency to light emitted from the semiconductor light emitting layer. A first electrode is electrically connected to the first semiconductor layer. A second electrode covers an upper surface of the second semiconductor layer. | 2013-05-30 |
20130134386 | LIGHT EMITTING DIODE HAVING STRAIN-ENHANCED WELL LAYER - An exemplary embodiment of the present invention includes a light emitting diode including a strain-enhanced well layer. The light emitting diode includes an n-contact layer, an active layer having a barrier layer and a well layer, a p-contact layer, and a strain-enhancing layer configured to enhance a strain applied to the well layer. | 2013-05-30 |
20130134387 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD OF MANUFACTURE THEREOF, AND MANUFACTURING SYSTEM OF SEMICONDUCTOR LIGHT EMITTING ELEMENT - Manufacturing variation (production fluctuation) of designed doping concentration and the concentration distribution in the direction of depth can be inhibited and light emitting output can be improved and stabilized. A capacitance measuring step, wherein, after the formation of a p-type electrode | 2013-05-30 |
20130134388 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - To provide a nitride semiconductor light-emitting element in which a buffer layer provided between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer has a first buffer layer expressed by an equation of In | 2013-05-30 |
20130134389 | LIGHT-EMITTING DEVICE HAVING A GAIN REGION AND A REFLECTOR - A light-emitting device has a first cladding layer, an active layer formed above the first cladding layer, a second cladding layer formed above the active layer, a gain region, and a reflecting part. The active layer has first and second side surfaces parallel to each other. The gain region has a first end surface disposed on the first side surface. The gain region also has a second end surface disposed inside from the second side surface and angled relative to the second side surface. The second end surface, the gain region and the first end surface are provided in a first normal direction relative to the second end surface. The reflecting part is disposed next to the second end surface. | 2013-05-30 |
20130134390 | LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE LAMP, AND ILLUMINATION DEVICE - A light-emitting diode of the present invention includes a light-emitting unit, containing an active layer having a quantum well structure prepared by alternately stacking a well layer and a barrier layer each formed from a compound semiconductor having a composition formula of (Al | 2013-05-30 |
20130134391 | Reducing Contact Resistance for Field-Effect Transistor Devices - A method and an apparatus for doping a graphene and nanotube thin-film transistor field-effect transistor device to decrease contact resistance with a metal electrode. The method includes selectively applying a dopant to a metal contact region of a graphene and nanotube field-effect transistor device to decrease the contact resistance of the field-effect transistor device. | 2013-05-30 |
20130134392 | Doping Carbon Nanotubes and Graphene for Improving Electronic Mobility - A method and an apparatus for doping a graphene or nanotube thin-film field-effect transistor device to improve electronic mobility. The method includes selectively applying a dopant to a channel region of a graphene or nanotube thin-film field-effect transistor device to improve electronic mobility of the field-effect transistor device. | 2013-05-30 |
20130134393 | Nanotube Field Effect Devices and Methods of Making Same - Methods of making non-volatile field effect devices and arrays of same. Under one embodiment, a method of making a non-volatile field effect device includes providing a substrate with a field effect device formed therein. The field effect device includes a source, drain and gate with a field-modulatable channel between the source and drain. An electromechanically-deflectable, nanotube switching element is formed over the field effect device. Terminals and corresponding interconnect are provided to correspond to each of the source, drain and gate such that the nanotube switching element is electrically positioned between one of the source, drain and gate and its corresponding terminal, and such that the others of said source, drain and gate are directly connected to their corresponding terminals. | 2013-05-30 |
20130134394 | Integrated Circuits Based on Aligned Nanotubes - Techniques, apparatus and systems are described for wafer-scale processing of aligned nanotube devices and integrated circuits. In one aspect, a method can include growing aligned nanotubes on at least one of a wafer-scale quartz substrate or a wafer-scale sapphire substrate. The method can include transferring the grown aligned nanotubes onto a target substrate. Also, the method can include fabricating at least one device based on the transferred nanotubes. | 2013-05-30 |
20130134395 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, LIGHTING DEVICE AND ORGANIC COMPOUND - A novel organic compound which can be used as a host material for a phosphorescent compound is provided. A light-emitting element containing the organic compound is provided. A light-emitting device, an electronic device, and a lighting device each of which includes the light-emitting element are provided. In the light-emitting element including a light-emitting layer interposed between a pair of electrodes, the light-emitting layer contains at least an organic compound and a phosphorescent compound. In the organic compound, a dibenzo[f,h]quinoxaline skeleton and an amino group having two substituents are bonded to each other through an arylene group. The substituents are separately an aryl group or a heteroaryl group. | 2013-05-30 |
20130134396 | Glass Pattern and Method for Forming the Same, Sealed Body and Method for Manufacturing the Same, and Light-Emitting Device - A glass pattern that can be used for a substrate provided with a material having low heat resistance and has increased productivity is provided. Further, a sealed body having high hermeticity and increased productivity is provided. Furthermore, a light-emitting device with high reliability including such a sealed body is provided. A glass sheet is used for a main portion of a glass pattern such as a straight line portion and a curved portion. In a joint portion of two glass sheets arranged in the corner portion, the straight line portion, or the like of the glass pattern, a frit paste is provided in contact with the glass sheets and is locally heated to remove the binder from the frit paste and to form a glass layer; thus, the glass sheets are fused to each other without any space provided therebetween. | 2013-05-30 |
20130134397 | Sealed Structure, Light-Emitting Device, Electronic Device, and Lighting Device - A sealed structure with high sealing capability, in which a pair of substrates is attached to each other with a glass layer is provided. The sealed structure has a first and second substrates, a first surface of the first substrate facing a first surface of the second substrate, and the glass layer which is in contact with the first and second substrates, defines a space between the first and second substrates, and is provided along the periphery of the first surface of the first substrate. The first substrate has a corner portion. The area of the first surface of the first substrate is smaller than or equal to that of the first surface of the second substrate. In at least one of respective welded regions between the glass layer and the first or second substrate, the width of the corner portion is larger than that of the side portion. | 2013-05-30 |
20130134398 | Sealed Structure, Light-Emitting Device, Electronic Device, and Lighting Device - A sealed structure which has high sealing capability and whose border can be slim is provided. The sealed structure includes a pair of substrates whose respective surfaces face each other with a space therebetween, and a glass layer which is in contact with the substrates, defines a space between the substrates, and has at least one corner portion and side portions in continuity with the corner portion. The width of the corner portion of the glass layer is smaller than or equal to that of the side portion of the same. The sealed structure may comprise a highly reliable light-emitting element including a layer containing a light-emitting organic compound provided between a pair of electrodes. | 2013-05-30 |
20130134399 | ORGANIC THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE - According to the present invention, there is provided an organic thin film transistor array substrate and a method for manufacturing the same and a display device. The method for manufacturing the organic thin film transistor array substrate comprises: forming a pattern comprising a source electrode, a drain electrode, a data line and a pixel electrode on a transparent substrate through a first patterning process; forming an organic semiconductor pattern, a gate insulating layer pattern, a pattern comprising a gate electrode and a gate line through a second patterning process on the transparent substrate after the first patterning process; depositing a passivation layer on the transparent substrate after the second patterning process, and forming a pattern comprising a data line pad region, a gate line pad region and a pixel pad region through a third patterning process; and forming a pattern of a common electrode on the transparent substrate after the third patterning process through a fourth patterning process. The technical solutions of the present invention can increase production efficiency of the organic thin film transistor array substrate and reduce production costs. | 2013-05-30 |
20130134400 | Organic Electroluminescent Device - An organic electroluminescence device of the present invention adapts a new concept in its configuration to improve its efficiency in addition to obtain a high reliability and good yielding. The organic electroluminescent device having an electroluminescent film containing an organic material capable of causing an electroluminescence and being arranged between a first electrode and a second electrode, includes: a carrier generation layer, which is a floating electrode, is embodied in the electroluminescent film; an insulting film between the first electrode and the electroluminescent film, and an insulating film between the second electrode and the electroluminescent film, wherein the organic electroluminescent device is driven by an alternating current bias. | 2013-05-30 |
20130134401 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE DISPLAY DEVICE - It is an object of the present invention to provide a technology for manufacturing a highly reliable display device at a low cost with high yield. In the present invention, a spacer is formed over a pixel electrode, thereby protecting the pixel electrode layer from a mask in formation of an electroluminescent layer. In addition, since a layer that includes an organic material that has water permeability is sealed in a display device with a sealing material and the sealing material and the layer that includes the organic material are not in contact, deterioration of a light-emitting element due to a contaminant such as water can be prevented. The sealing material is formed in a portion of a driver circuit region in the display device, and thus, the narrower frame margin of the display device can also be accomplished. | 2013-05-30 |
20130134402 | ORGANIC ELECTROLUMINESCENCE ELEMENT, ORGANIC ELECTROLUMINESCENCE DEVICE, ORGANIC EL DISPLAY DEVICE, AND ORGANIC EL LIGHTING - The present invention relates to an organic electroluminescence element which comprises an anode, a luminescent layer, two or more electron transport layers and a cathode, in this order, wherein at least one of the two or more electron transport layers adjoins the luminescent layer, the luminescent layer contains a luminescent material and a charge transport material, the electron transport layer which adjoins the luminescent layer contains a charge transport material, the charge transport material contained in the luminescent layer and the charge transport material contained in the electron transport layer which adjoins the luminescent layer may be the same material or may be different material, and the specific electron affinities EA1, EA2 and EA3, and the specific work function WF satisfy the specific relationship. | 2013-05-30 |
20130134403 | ORGANIC ELECTROLUMINESCENCE ELEMENT - An organic light-emitting element comprising: an anode; a cathode; banks; a functional layer between the anode and the cathode; and a hole injection layer between the anode and the functional layer. The functional layer includes one or more sublayers including a light-emitting sublayer defined by the banks and that contains an organic material. The hole injection layer comprises tungsten oxide, includes an occupied energy level that is approximately 1.8 electron volts to approximately 3.6 electron volts lower than a lowest energy level of a valence band of the hole injection layer in terms of a binding energy, has a surface facing the functional layer, and has a recessed structure such that a portion of the surface overlapping with the light-emitting sublayer is located closer to the anode than other portions. The recessed structure has a recessed portion whose inner surface is in contact with the functional layer. | 2013-05-30 |
20130134404 | LIGHT-EMITTING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - The present invention provides a light-emitting device including a light-emitting element over a substrate, the light-emitting element is partitioned from an adjacent light-emitting element by a partition wall, the light-emitting element comprising a first electrode, a layer formed over the first electrode, a light-emitting layer formed over the layer and a second electrode formed over the light-emitting layer, the layer contains an inorganic compound, an organic compound and a halogen atom, the partition wall contains the inorganic compound and the organic compound, and the layer. The light-emitting device provides higher reliability and fewer defects. | 2013-05-30 |
20130134405 | BENZOFLUORENE COMPOUND, EMISSION MATERIALS AND ORGANIC ELECTROLUMINESCENT DEVICE - Provided is a benzofluorene compound which exhibits excellent performances when applied to an organic electroluminescent device. | 2013-05-30 |
20130134406 | Light-Emitting Element, Light Emitting Device, and Electronic Device - A light-emitting element includes a light-emitting layer having a two-layer structure in which a first light-emitting layer containing a first light-emitting substance and a second light-emitting layer containing a second light-emitting substance, which is in contact with the first light-emitting layer, are provided between an anode and a cathode. The first light-emitting layer is separated into two layers of a layer provided on the anode side and a layer provided on the cathode side. The layer provided on the anode side contains only a first light-emitting substance, or a first organic compound of less than 50 wt % and the first light-emitting substance of 50 wt % to 100 wt %. The layer provided on the cathode side contains a second organic compound and the first light-emitting substance. The second light-emitting layer, which is provided in contact with the first light-emitting layer, contains the second light-emitting substance and a third organic compound. | 2013-05-30 |
20130134407 | GLASS FOR SCATTERING LAYER OF ORGANIC LED ELEMENT, AND ORGANIC LED ELEMENT - A glass used for a scattering layer of an organic LED element, and an organic LED element using the scattering layer are provided. The present invention relates to an organic LED element including a transparent substrate, a first electrode, an organic layer, and a second electrode in this order, which includes a scattering layer including, in terms of mol % on the basis of oxides thereof: 15 to 30% of P | 2013-05-30 |
20130134408 | LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND ELECTRONIC APPARATUS - It is an object of the present invention to provide a light emitting element with a low driving voltage. In a light emitting element, a first electrode; and a first composite layer, a second composite layer, a light emitting layer, an electron transporting layer, an electron injecting layer, and a second electrode, which are stacked over the first electrode, are included. The first composite layer and the second composite layer each include metal oxide and an organic compound. A concentration of metal oxide in the first composite layer is higher than a concentration of metal oxide in the second composite layer, whereby a light emitting element with a low driving voltage can be obtained. Further, the composite layer is not limited to a two-layer structure. A multi-layer structure can be employed. However, a concentration of metal oxide in the composite layer is gradually higher from the light emitting layer to first electrode side. | 2013-05-30 |
20130134409 | PHOTOELECTRIC TRANSDUCER AND SOLID-STATE IMAGING APPARATUS - Provided is a photoelectric transducer having a photoelectric conversion material layer including an organic material with higher sensitivity and response than conventional one. | 2013-05-30 |
20130134410 | ORGANIC ELECTROLUMINESCENT ELEMENT AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a multi-photon-type organic electroluminescent element including a charge generation layer using a material that is difficult to be degraded even at around normal atmospheric pressure. In an organic electroluminescent element ( | 2013-05-30 |
20130134411 | SEMICONDUCTOR DEVICE, PROCESS FOR PRODUCTION OF SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE - A semiconductor device ( | 2013-05-30 |
20130134412 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - To reduce oxygen vacancies in an oxide semiconductor film and the vicinity of the oxide semiconductor film and to improve electric characteristics of a transistor including the oxide semiconductor film. A semiconductor device includes a gate electrode whose Gibbs free energy for oxidation is higher than that of a gate insulating film. In a region where the gate electrode is in contact with the gate insulating film, oxygen moves from the gate electrode to the gate insulating film, which is caused because the gate electrode has higher Gibbs free energy for oxidation than the gate insulating film. The oxygen passes through the gate insulating film and is supplied to the oxide semiconductor film in contact with the gate insulating film, whereby oxygen vacancies in the oxide semiconductor film and the vicinity of the oxide semiconductor film can be reduced. | 2013-05-30 |
20130134413 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - One embodiment of the present invention is a material which is suitable for a semiconductor included in a transistor, a diode, or the like. One embodiment of the present invention is an oxide material represented as InM1 | 2013-05-30 |
20130134414 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A step for forming an island-shaped semiconductor layer of a semiconductor device used in a display device is omitted in order to manufacture the semiconductor device with high productivity and low cost. The semiconductor device is manufactured through four photolithography processes: four steps for forming a gate electrode, for forming a source electrode and a drain electrode, for forming a contact hole, and for forming a pixel electrode. In the step for forming the contact hole, a groove portion in which a semiconductor layer is removed is formed, whereby formation of a parasitic transistor is prevented. An oxide semiconductor is used as a material of the semiconductor layer in which a channel is formed, and an oxide semiconductor having a higher insulating property than the semiconductor layer is provided over the semiconductor layer. | 2013-05-30 |
20130134415 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device in which a shift of the threshold voltage of a transistor is suppressed is provided. A semiconductor device in which a decrease in the on-state current of a transistor is suppressed is provided. The semiconductor device is manufactured as follows: forming a gate electrode layer over a substrate; forming a gate insulating film over the gate electrode layer; forming an oxide semiconductor film over the gate insulating film; forming a metal oxide film having a higher reducing property than the oxide semiconductor film over the oxide semiconductor film; performing heat treatment while the metal oxide film and the oxide semiconductor film are in contact with each other, thereby the metal oxide film is reduced so that a metal film is formed; and processing the metal film to form a source electrode layer and a drain electrode layer. | 2013-05-30 |
20130134416 | SEMICONDUCTOR DISPLAY DEVICE - In the case where a still image is displayed on a pixel portion having a pixel, for example, a driver circuit for controlling writing of an image signal having image data to the pixel portion stops by stopping supply of power supply voltage to the driver circuit, and writing of an image signal to the pixel portion is stopped. After the driver circuit stops, supply of power supply voltage to a panel controller for controlling the operation of the driver circuit and an image memory for storing the image data is stopped, and supply of power supply voltage to a CPU for collectively controlling the operation of the panel controller, the image memory, and a power supply controller for controlling supply of power supply voltage to a variety of circuits in a semiconductor display device is stopped. | 2013-05-30 |
20130134417 | DISPLAY DEVICE - A display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area is necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer which is over the gate insulating layer and overlaps with the gate electrode; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and whose end portions are over the first oxide semiconductor layer and overlap with the gate electrode. The gate electrode of the non-linear element is connected to a scan line or a signal line, the first wiring layer or the second wiring layer of the non-linear element is directly connected to the gate electrode layer so as to apply potential of the gate electrode. | 2013-05-30 |
20130134418 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device, includes a semiconductor substrate, a first interconnect layer formed over the semiconductor substrate, a gate electrode formed in the first interconnect layer, a gate insulating film formed over the gate electrode, a second interconnect layer formed over the gate insulating film, an oxide semiconductor layer formed in the second interconnect layer, and a via formed in the second interconnect layer and connected to the oxide semiconductor layer. The gate electrode, the gate insulating film and the oxide semiconductor layer overlap in a plan view. | 2013-05-30 |
20130134419 | VERTICAL DIODES FOR NON-VOLATILE MEMORY DEVICE - A steering device. The steering device includes an n-type impurity region comprising a zinc oxide material and a p-type impurity region comprising a silicon germanium material. A pn junction region formed from the zinc oxide material and the silicon germanium material. The steering device is a serially coupled to a resistive switching device to provide rectification for the resistive switching device to form a non-volatile memory device. | 2013-05-30 |