21st week of 2012 patent applcation highlights part 47 |
Patent application number | Title | Published |
20120129313 | THERMALLY INSULATED PHASE MATERIAL CELLS - A memory cell structure and method for forming the same. The method includes forming a pore within a dielectric layer. The pore is formed over the center of an electrically conducting bottom electrode. The method includes depositing a thermally insulating layer along at least one sidewall of the pore. The thermally insulating layer isolates heat from phase change current to the volume of the pore. In one embodiment phase change material is deposited within the pore and the volume of the thermally insulating layer. In another embodiment a pore electrode is formed within the pore and the volume of the thermally insulating layer, with the phase change material being deposited above the pore electrode. The method also includes forming an electrically conducting top electrode above the phase change material. | 2012-05-24 |
20120129314 | METHOD AND RESULTING STRUCTURE FOR DEEP TRENCH POLYSILICON HARD MASK REMOVAL - A method of forming a capacitor structure includes forming a pad oxide layer overlying a substrate, a nitride layer overlying the pad oxide layer, an interlayer dielectric layer overlying the nitride layer, and a patterned polysilicon mask layer overlying the interlayer dielectric layer. The method then applies a first RIE process to form a trench region through a portion of the interlayer dielectric layer using the patterned polysilicon mask layer and maintaining the first RIE to etch through a portion of the nitride layer and through a portion of the pad oxide layer. The method stops the first RIE when a portion of the substrate has been exposed. The method then forms an oxide layer overlying the exposed portion of the substrate and applies a second RIE process to continue to form the trench region by removing the oxide layer and removing a portion of the substrate to a predetermined depth. | 2012-05-24 |
20120129315 | Method for fabricating semiconductor package - A method for fabricating a semiconductor package includes the steps of: providing an alignment board having a plurality of openings and a plurality of alignment marks corresponding to the openings, respectively; disposing a plurality of chips on the alignment board at positions corresponding to the openings according to the alignment marks; pressing the alignment board with a carrier board having a soft layer disposed on one surface thereof so as to embed the chips in the soft layer of the carrier board; and removing the alignment board. As such, the positions of the chips are accurately positioned according to the alignment marks on the alignment board. | 2012-05-24 |
20120129316 | METHOD FOR FORMING FINE PATTERN OF SEMICONDUCTOR DEVICE - A method for forming fine pattern includes sequentially forming a first thin film and a second thin film over a target layer for patterning, forming a partition over the second thin film, removing the partition after forming spacers on sidewalls of the partition, forming first pattern of the second thin film by etching the second thin film of a first region and the second thin film of a second region while exposing the spacers, forming second pattern of the second thin film by using the spacers as masks and etching the first pattern of the second thin film in the first region, forming first thin film pattern by using the first and second patterns of the second thin film as masks in the first and second regions and etching the first thin film, and etching the pattern target layer. | 2012-05-24 |
20120129317 | METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - In the present invention, in the exposure to light of a memory cell array or the like of a semiconductor memory or the like, when a group of unit openings for etching the STI trench regions in which the unit openings for etching the STI trench regions each having a rectangular shape are arranged in rows and columns are transferred by the exposure onto a negative resist film, multiple exposure is appropriately used which includes a first exposure step using a first optical mask having a group of first linear openings extending in a column direction and a second exposure step using a second optical mask having a group of second linear openings extending in a row direction. | 2012-05-24 |
20120129318 | ATMOSPHERIC PRESSURE PLASMA ETCHING APPARATUS AND METHOD FOR MANUFACTURING SOI SUBSTRATE - The atmospheric pressure plasma etching apparatus is provided with a state detecting unit for detecting a state of the object to be processed, and the operation of the atmospheric pressure plasma etching apparatus is controlled in accordance with information detected by the state detecting unit. Thus, in the atmospheric pressure plasma etching apparatus, the object to be processed can be etched while the state of the object to be processed is detected. Accordingly, the object to be processed can be etched favorably. Further, an SOI substrate is manufactured using the atmospheric pressure plasma etching apparatus, whereby both reduction in manufacturing cost of the SOI substrate and suppression of peeling in the SOI substrate can be achieved. | 2012-05-24 |
20120129319 | Electrical Antifuse, Method of Manufacture and Method of Programming - An antifuse having a link including a region of unsilicided semiconductor material may be programmed at reduced voltage and current and with reduced generation of heat by electromigration of metal or silicide from a cathode into the region of unsilicided semiconductor material to form an alloy having reduced bulk resistance. The cathode and anode are preferably shaped to control regions from which and to which material is electrically migrated. After programming, additional electromigration of material can return the antifuse to a high resistance state. The process by which the antifuse is fabricated is completely compatible with fabrication of field effect transistors and the antifuse may be advantageously formed on isolation structures. | 2012-05-24 |
20120129320 | METHOD OF NISIGE EPITAXIAL GROWTH BY INTRODUCING AL INTERLAYER - The present invention discloses a method of NiSiGe epitaxial growth by introducing Al interlayer, comprising the deposition of an Al thin film on the surface of SiGe layer, subsequent deposition of a Ni layer on Al thin film and then the annealing process for the reaction between Ni layer and SiGe material of SiGe layer to form NiSiGe material. Due to the barrier effect of Al interlayer, NiSiGe layer features a single crystal structure, a flat interface with SiGe substrate and a thickness of up to 0.3 nm, significantly enhancing interface performance. | 2012-05-24 |
20120129321 | APPARATUS FOR MANUFACTURING SEMICONDUCTOR - A semiconductor device manufacturing apparatus includes a chamber including a reaction space, a substrate disposing unit configured to dispose a substrate within the chamber, a first heating unit configured to optically heat the reaction space and disposed under the chamber, a second heating unit configured to heat the reaction space through resistive heating and disposed over the chamber, and a plasma generating unit configured to generate plasma in the reaction space. Since the apparatus generates the plasma using the plasma generating unit disposed over the chamber, the deposition process based on heating and the etch process based on the plasma can be simultaneously performed in one single chamber. | 2012-05-24 |
20120129322 | COMPOSITE MATERIAL COMPRISING NANOPARTICLES AND PRODUCTION OF PHOTOACTIVE LAYERS CONTAINING QUATERNARY, PENTANARY AND HIGHER-ORDER COMPOSITE SEMICONDUCTOR NANOPARTICLES - A composite material includes at least two components, wherein at least one component is present in the form of nanoparticles, which consist of at least three metals and at least one non-metal and the diameter of which is less than one micrometre, preferably less than 200 nm. The novel composite material is particularly well suited for the production of photoactive layers. | 2012-05-24 |
20120129323 | SEMICONDUCTOR THIN FILM, THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND MANUFACTURING EQUIPMENT OF SEMICONDUCTOR THIN FILM - A method for manufacturing a semiconductor thin film is provided which can form its crystal grains having a uniform direction of crystal growth and being large in size and a manufacturing equipment using the above method, and a method for manufacturing a thin film transistor. In the above method, by applying an energy beam partially intercepted by a light shielding element, melt and re-crystallization occur with a light-shielded region as a starting point. The irradiation of the beam gives energy to the light-shielded region of the silicon thin film so that melt and re-crystallization occur with the light-shielded region as the starting point and so that a local temperature gradient in the light-shielded region is made to be 1200° C./μm or more. In the manufacturing method, a resolution of an optical system used to apply the energy beam is preferably 4 μm or less. | 2012-05-24 |
20120129324 | SEMICONDUCTOR STRUCTURE MADE USING IMPROVED MULTIPLE ION IMPLANTATION PROCESS - Methods and apparatus provide for: a first source of plasma, wherein the plasma includes a first species of ions; a second source of plasma, wherein the plasma includes a second species of ions; selection of the plasma from the first and second sources; and acceleration the first species of ions or the second species of ions toward a semiconductor wafer. | 2012-05-24 |
20120129325 | METHOD FOR ION IMPLANT USING GRID ASSEMBLY - A method of ion implantation comprising: providing a plasma within a plasma region of a chamber; positively biasing a first grid plate, wherein the first grid plate comprises a plurality of apertures; negatively biasing a second grid plate, wherein the second grid plate comprises a plurality of apertures; flowing ions from the plasma in the plasma region through the apertures in the positively-biased first grid plate; flowing at least a portion of the ions that flowed through the apertures in the positively-biased first grid plate through the apertures in the negatively-biased second grid plate; and implanting a substrate with at least a portion of the ions that flowed through the apertures in the negatively-biased second grid plate. | 2012-05-24 |
20120129326 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes the steps of: preparing a substrate made of silicon carbide; forming, on one main surface of the substrate, a detection film having a light transmittance different from that of silicon carbide; confirming presence of the substrate by applying light to the detection film; and forming an active region in the substrate whose presence has been confirmed. | 2012-05-24 |
20120129327 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING A HARD MASK AND DIFFUSION - Provided is a method that can include forming a gate dielectric layer, a first diffusion layer, and a hard mask layer on a substrate defined to include first and second spaced apart regions, forming a photoresist pattern on the hard mask layer in the first region and exposing the hard mask layer on the second region, removing the exposed hard mask layer on the second region and the first diffusion layer on the second region to expose the gate dielectric layer on the second region, removing the photoresist pattern, forming a second diffusion layer on uppermost surfaces of the first and second regions, and performing a heat treatment process to diffuse a first diffusion material included in the first diffusion layer and a second diffusion material included in the second diffusion layer. | 2012-05-24 |
20120129328 | MULTIPLE LAYER BARRIER METAL FOR DEVICE COMPONENT FORMED IN CONTACT TRENCH - A semiconductor device formed on a semiconductor substrate may include a component formed in a contact trench located in an active cell region. The component may comprise a barrier metal deposited on a bottom and portions of sidewalls of the contact trench and a tungsten plug deposited in a remaining portion of the contact trench. The barrier metal may comprise first and second metal layers. The first metal layer may be proximate to the sidewall and the bottom of the contact trench. The first metal layer may include a nitride. The second metal layer may be between the first metal layer and the tungsten plug and between the tungsten plug and the sidewall. The second metal layer covers portions of the sidewalls of not covered by the first metal layer. | 2012-05-24 |
20120129329 | MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE - The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation chamber, film formation can be carried out without exposing TFTs to the air during the time from washing step to the film formation step and it becomes possible to maintain the cleanliness of the interfaces of each film which form the TFT. | 2012-05-24 |
20120129330 | SEMICONDUCTOR DEVICES EMPLOYING HIGH-K DIELECTRIC LAYERS AS A GATE INSULATING LAYER AND METHODS OF FABRICATING THE SAME - A method of fabricating a semiconductor device includes providing a semiconductor substrate having a first region and a second region, forming a nitrogen-containing lower gate insulating layer on the semiconductor substrate, forming an upper gate insulating layer on the nitrogen containing lower gate insulating layer, forming a lower metal layer on the upper gate insulating layer; and selectively removing the lower metal layer in the first region such that a lower metal layer pattern remains in the second region, wherein the upper gate insulating layer in the first region prevents the lower gate insulating layer in the first region from being etched during removing of the lower metal layer in the first region. A semiconductor device fabricated by the method is also provided. | 2012-05-24 |
20120129331 | METHODS OF FABRICATING A SEMICONDUCTOR DEVICE INCLUDING METAL GATE ELECTRODES - A method of fabricating semiconductor devices having metal gate electrodes includes forming an insulating layer on a semiconductor substrate having a first region and a second region. The insulating layer is formed to include an interlayer insulating layer and a gate insulation layer. The interlayer insulating layer has first and second grooves respectively disposed in the first and second regions, and the gate insulation layer covers at least bottom surfaces of the first and second grooves. A laminated metal layer is formed on the substrate having the insulating layer. A planarization layer having non-photo sensitivity is formed on the laminated metal layer. The planarization layer in the first region is selectively removed using a dry etching process to expose the laminated metal layer in the first region and to form a planarization layer pattern covering the laminated metal layer in the second region. | 2012-05-24 |
20120129332 | METHOD FOR FORMING METAL CONTACTS - Methods of forming metal contacts with metal inks in the manufacture of photovoltaic devices are disclosed. The metal inks are selectively deposited on semiconductor coatings by inkjet and aerosol apparatus. The composite is heated to selective temperatures where the metal inks burn through the coating to form an electrical contact with the semiconductor. Metal layers are then deposited on the electrical contacts by light induced or light assisted plating. | 2012-05-24 |
20120129333 | METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGE AND SEMICONDUCTOR PACKAGE MANUFACTURED USING THE SAME - Provided are a method for manufacturing a semiconductor package and a semiconductor package manufactured using the method. The method includes providing a substrate having a first region and a second region having a higher step difference than the first region, i.e., having a difference in height, forming a mask pattern having a first opening exposing a portion of the first region and a second opening exposing a portion of the second region on the substrate, forming first and second bump material films filling the first and second openings, respectively, and forming the first and second bumps by performing a reflow process on the first and second bump material films, wherein the first opening has a lower portion having the same width with the second opening and a top portion having a width greater than the second opening. | 2012-05-24 |
20120129334 | SEMICONDUCTOR PACKAGES AND METHODS OF MANUFACTURING THE SAME - Provided are semiconductor packages and methods of manufacturing the semiconductor package. The semiconductor packages may include a substrate including a chip pad, a redistributed line which is electrically connected to the chip pad and includes an opening. The semiconductor packages may also include an external terminal connection portion, and an external terminal connection pad which is disposed at an opening and electrically connected to the redistributed line. The present general inventive concept can solve the problem where an ingredient of gold included in a redistributed line may be prevented from being diffused into an adjacent bump pad to form a void or an undesired intermetallic compound. In a chip on chip structure, a plurality of bumps of a lower chip are connected to an upper chip to improve reliability, diversity and functionality of the chip on chip structure. | 2012-05-24 |
20120129335 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device including the following steps: forming an insulator layer over a first conductor over a semiconductor substrate; forming a barrier layer to coat the surface of the insulator layer; forming a second conductor over the barrier layer; melting the second conductor in an atmosphere containing either hydrogen or carboxylic acid in a condition that the surface of the insulator layer over the first conductor is coated with the barrier layer; and removing the barrier layer partially from the surface of the insulator layer with the second conductor as a mask. | 2012-05-24 |
20120129336 | STRUCTURES AND METHODS FOR IMPROVING SOLDER BUMP CONNECTIONS IN SEMICONDUCTOR DEVICES - Structures with improved solder bump connections and methods of fabricating such structures are provided herein. The structure includes a trench formed in a dielectric layer which has at least a portion thereof devoid of a fluorine boundary layer. The structure further includes a copper wire in the trench having at least a bottom portion thereof in contact with the non-fluoride boundary layer of the trench. A lead free solder bump is in electrical contact with the copper wire. | 2012-05-24 |
20120129337 | DUAL DAMASCENE PROCESS - A dual damascene process is disclosed. The process includes the steps of: forming a dielectric layer on a substrate; forming a first patterned mask on the dielectric layer, wherein the first patterned mask comprises an opening; forming a material layer on the dielectric layer and covering the first patterned mask; forming a second patterned mask on the dielectric layer, wherein the second patterned mask comprises a first aperture; forming a second aperture in the second patterned mask, wherein the second aperture and the first aperture comprise a gap therebetween; and utilizing the second patterned mask as etching mask for partially removing the material layer and the dielectric layer through the first aperture and the second aperture. | 2012-05-24 |
20120129338 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - When a wiring structure is formed by a trench-first dual damascene method, a first hard mask for forming via holes and a second hard mask for forming wiring trenches are sequentially formed on an interlayer insulating film, openings are formed at the first hard mask while using the second hard mask as a mask, and thereafter, the openings are expanded in a lateral direction by an isotropic etching to form openings, via holes are formed by etching the interlayer insulating film while using the first hard mask and the second hard mask as masks, and wiring trenches communicating with the via holes are formed by etching the interlayer insulating film while using the second hard mask as a mask. | 2012-05-24 |
20120129339 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A CONTACT PLUG - There is provided a semiconductor device that includes: a transistor having a gate electrode, a source region, and a drain region; a first inter-layer insulation film covering the transistor; a first contact plug formed penetrating through the first inter-layer insulation film and connected to either the source region or the drain region; a second inter-layer insulation film covering the first contact plug; a groove extending in the second inter-layer insulation film in a same direction as an extending direction of the gate electrode and exposing a top surface of the first contact plug at a bottom thereof; a second contact plug connected to the first contact plug and formed in the groove; and a wiring pattern extending on the second inter-layer insulation film so as to traverse the groove and integrated with the second contact plug. | 2012-05-24 |
20120129340 | ANTIFUSE STRUCTURE FOR IN LINE CIRCUIT MODIFICATION - An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material. | 2012-05-24 |
20120129341 | METHOD FOR FABRICATING VIA HOLE AND THROUGH-SILICON VIA - A method for fabricating a via hole includes forming a first mask pattern on a first surface of a wafer exposing a portion of the first surface of the wafer, forming a passivation region within the wafer by implanting impurities into the exposed portion of the wafer using the first mask pattern as an ion implantation barrier layer, forming an etching stop layer on the first surface of the wafer including the passivation regions, forming a second mask pattern on a second surface of the wafer faces away from the first surface of the wafer, wherein the second mask pattern exposes a portion of the second surface of the wafer over an area between the passivation regions, and forming a via hole by etching the wafer using the second mask pattern as an etching mask. | 2012-05-24 |
20120129342 | METHOD FOR FABRICATING A SEMICONDUCTOR SUBSTRATE WITH A CO-PLANAR BACKSIDE METALLIZATION STRUCTURE - A method for fabricating a backside metallization structure on a semiconductor substrate including moving a printhead having at least one nozzle orifice relative to the semiconductor substrate, and feeding an Al passivation layer ink and an AgAl soldering pad ink through said printhead such that both said Al passivation layer ink and said AgAl soldering pad ink are simultaneously extruded from said at least one nozzle orifice and deposited onto the semiconductor substrate. | 2012-05-24 |
20120129343 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - To provide a method of manufacturing a semiconductor device that can be in contact with both of an n-type SiC region and a p-type SiC region and can suppress increase in contact resistance due to oxidation, a method of manufacturing a semiconductor device includes the steps of preparing a SiC layer, and forming an ohmic electrode on a main surface of the SiC layer. The step of forming the ohmic electrode includes the steps of forming a conductor layer which will become the ohmic electrode on the main surface of the SiC layer, and performing heat treatment such that the conductor layer becomes the ohmic electrode. After the step of performing the heat treatment, a temperature of the ohmic electrode when a surface of the ohmic electrode is exposed to an atmosphere containing oxygen is set to 100° C. or lower. | 2012-05-24 |
20120129344 | PROCESS AND APPARATUS FOR REMOVAL OF CONTAMINATING MATERIAL FROM SUBSTRATES - A process for removing contaminating metals from a substrate to improve electrical performance is provided. Polycationic metals are known to be particularly detrimental to the electrical properties of an insulator or semiconductor substrate. The process includes the exposure of the substrate to an aqueous solution of at least one compound of the formula: (I) where n in each occurrence is independently an integer value between 0 and 6, and X is independently in each occurrence H, NR | 2012-05-24 |
20120129345 | COMPOSITION AND METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATES - The compositions and methods for the removal of residues and contaminants from metal or dielectric surfaces comprises at least one alkyl diphosphonic acid, at least one second acidic substance at amble ratio of about 1:1 to about 10:1 in water, arid pH is adjusted to from about 6 to about 10 with a metal ion free base, and a surfactant. Particularly, a composition and method of cleaning residues after chemical mechanical polishing of a copper or aluminum surface of the semiconductor substrates. | 2012-05-24 |
20120129346 | POLISHING AGENT, CONCENTRATED ONE-PACK TYPE POLISHING AGENT, TWO-PACK TYPE POLISHING AGENT AND METHOD FOR POLISHING SUBSTRATE - A polishing agent of the invention comprises tetravalent metal hydroxide particles, a cationized polyvinyl alcohol, at least one type of saccharide selected from the group consisting of an amino sugar, a derivative of the amino sugar, a polysaccharide containing an amino sugar and a derivative of the polysaccharide, and water. The method for polishing a substrate of the invention comprises a step of polishing the silicon oxide film | 2012-05-24 |
20120129347 | Apparatus and Method For Incorporating Composition Into Substrate Using Neutral Beams - An apparatus and method for processing a surface of a substrate using neutral beams are provided to repeatedly process an oxide layer using the neutral beams having low energy to minimize electrical damage to the oxide layer and improve characteristics of the oxide layer. The apparatus is mounted in a plasma generating chamber, and includes: an ion beam generating gas inlet, which injects a gas for generating ion beams; an ion source, which generates the ion beams having a polarity from the gas introduced through the ion beam generating gas inlet; a grid assembly, which is installed on one end of the ion source; a reflector, which is aligned with the grid assembly and converts the ion beams to the neutral beams; and a stage, on which the substrate is placed on a traveling path of the neutral beams. | 2012-05-24 |
20120129348 | LASER PROCESSING METHOD - A laser processing method of converging laser light into an object to be processed made of silicon so as to form a modified region and etching the object along the modified region so as to form the object with a through hole comprises a laser light converging step of converging the laser light at the object so as to form the modified region along a part corresponding to the through hole in the object; an etch resist film producing step of producing an etch resist film resistant to etching on an outer surface of the object after the laser light converging step; and an etching step of etching the object so as to advance the etching selectively along the modified region and form the through hole after the etch resist film producing step; while the laser light converging step exposes the modified region to the outer surface of the object. | 2012-05-24 |
20120129349 | METHOD OF FORMING PATTERNS FOR SEMICONDUCTOR DEVICE - A method of forming patterns for a semiconductor device. The method includes: forming a first hard mask layer on a layer which is to be etched; forming a second hard mask layer on the first hard mask layer, wherein the second hard mask layer includes a first portion and a second portion formed underneath the first portion, wherein the first portion and second portion are composed of the same material; etching the first portion to form first patterns; forming spacers covering sidewalls of the first patterns; etching the second portion using the spacers as etch masks to form second patterns; etching the first hard mask layer and the spacers using the second patterns disposed underneath the spacers as etch masks to form third patterns; and etching the layer to be etched, using the third patterns. | 2012-05-24 |
20120129350 | METHOD FOR REDUCING WORDLINE BRIDGE RATE - The method of forming a wordline is provided in the present invention. The proposed method includes steps of: (a) etching a metal-silicide layer and a POLY layer via a hard mask, wherein the metal-silicide layer is disposed on the POLY layer; (b) forming a POLY recess in the POLY layer; and (c) forming a liner film covering the metal-silicide layer. | 2012-05-24 |
20120129351 | COMPOSITE REMOVABLE HARDMASK - A method and apparatus for forming an amorphous carbon layer on a substrate is provided. A first portion of the amorphous carbon layer having a high stress level is formed from a hydrocarbon precursor having high dilution ratio, with optional amine precursor included to add stress-elevating nitrogen. A second portion of the amorphous carbon layer having a low stress level is formed on the first portion by reducing the dilution ratio of the hydrocarbon precursor and lowering or eliminating the amine gas. Pressure, temperature, and RF power input may be adjusted instead of, or in addition to, precursor flow rates, and different precursors may be used for different stress levels. | 2012-05-24 |
20120129352 | SILICON-CONTAINING FILM, RESIN COMPOSITION, AND PATTERN FORMATION METHOD - A pattern-forming method includes forming a silicon-containing film on a substrate, the silicon-containing film having a mass ratio of silicon atoms to carbon atoms of 2 to 12. A shape transfer target layer is formed on the silicon-containing film. A fine pattern is transferred to the shape transfer target layer using a stamper that has a fine pattern to form a resist pattern. The silicon-containing film and the substrate are dry-etched using the resist pattern as a mask to form a pattern on the substrate in nanoimprint lithography. According to another aspect of the invention, a silicon-containing film includes silicon atoms and carbon atoms. A mass ratio of silicon atoms to carbon atoms is 2 to 12. The silicon-containing film is used for a pattern-forming method employed in nanoimprint lithography. | 2012-05-24 |
20120129353 | METHOD FOR PATTERN FORMATION, METHOD AND COMPOSITION FOR RESIST UNDERLAYER FILM FORMATION, AND RESIST UNDERLAYER FILM - Provided by the present invention is a method including: (1) forming a resist underlayer film on the upper face side of a substrate to be processed using a composition for forming a resist underlayer film, the composition containing (A) a compound having a group represented by the following formula (1); (2) forming a resist coating film by applying a resist composition on the resist underlayer film; (3) exposing the resist coating film by selectively irradiating the resist coating film with a radiation; (4) forming a resist pattern by developing the exposed resist coating film; and (5) forming a predetermined pattern on the substrate to be processed by sequentially dry etching the resist underlayer film and the substrate using the resist pattern as a mask. | 2012-05-24 |
20120129354 | PROCESS FOR ETCHING SILICON WITH SELECTIVITY TO SILICON-GERMANIUM - A method for performing a selective etching process is described. The method includes preparing a substrate having a silicon layer (Si) and a silicon-germanium (SiGe | 2012-05-24 |
20120129355 | METHOD FOR TEXTURING A SURFACE OF A SEMICONDUCTOR SUBSTRATE AND DEVICE FOR CARRYING OUT THE METHOD - A method for texturing a surface of a semiconductor substrate is proposed. Therein, the surface is etched with an etching solution which etches the semiconductor substrate material, wherein a wetting agent is added to the etching solution, which wetting agent contains water-soluble polymers, in particular in the form of polyvinyl alcohol. Therein, the process temperatures of the etching solution can be increased in comparison to conventional texturing methods, as a result of which the process time can be reduced. Process guidance is simplified and process stability is increased. A suitable texturing device for carrying out the method can, in addition to a basin for accommodating the etching solution and a heater for heating the etching solution to at least 85° C., furthermore have an optionally heatable emptying device for emptying the etching solution out of the basin, a removal device for removing crystallised water-soluble polymers from the etching solution and a circulation device for circulating the etching solution. | 2012-05-24 |
20120129356 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of forming a dielectric layer having an air gap to isolate adjacent wirings or a gate stack of the semiconductor device is provided. A method of fabricating a semiconductor device includes providing a semiconductor substrate on which a plurality of wirings are formed adjacent to one another and forming a dielectric layer filling an upper portion of a space between the adjacent wirings to form air gaps by a thermal chemical vapor deposition method. | 2012-05-24 |
20120129357 | TWO-DIMENSIONAL PATTERNING EMPLOYING SELF-ASSEMBLED MATERIAL - A first nanoscale self-aligned self-assembled nested line structure having a sublithographic width and a sublithographic spacing and running along a first direction is formed from first self-assembling block copolymers within a first layer. The first layer is filled with a filler material and a second layer is deposited above the first layer containing the first nanoscale nested line structure. A second nanoscale self-aligned self-assembled nested line structure having a sublithographic width and a sublithographic spacing and running in a second direction is formed from second self-assembling block copolymers within the second layer. The composite pattern of the first nanoscale nested line structure and the second nanoscale nested line structure is transferred into an underlayer beneath the first layer to form an array of structures containing periodicity in two directions. | 2012-05-24 |
20120129358 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device that are capable of uniformly heating a substrate while reducing an increase in substrate temperature to reduce a thermal budget. The substrate processing apparatus includes a process chamber configured to process a substrate; a substrate support unit installed in the process chamber to support the substrate; a microwave supply unit configured to supply a microwave toward a process surface of the substrate supported by the substrate support unit, the microwave supply unit including a microwave radiating unit radiating the microwave supplied from a microwave source to the process chamber while rotating; a partition installed between the microwave supply unit and the substrate support unit; a cooling unit installed at the substrate support unit; and a control unit configured to control at least the substrate support unit, the microwave supply unit and the cooling unit. | 2012-05-24 |
20120129359 | LASER PROCESSING METHOD - A laser processing method comprises a laser light converging step of converging a laser light at a sheet-like object to be processed made of silicon so as to form a modified region within the object, and an etching step of anisotropically etching the object so as to thin the object to a target thickness and advancing the etching selectively along the modified region so as to form the object with a through hole tilted with respect to a thickness direction of the object after the laser light converging step, wherein the laser light converging step forms a first modified region as the modified region in a part corresponding to the through hole in the object and a second modified region as the modified region extending parallel to the thickness direction and joining with the first modified region in a part to be removed upon thinning by the anisotropic etching in the object, and wherein the etching step advances the etching selectively along the second modified region and then along the first modified region while thinning the object and completes forming the through hole when the object is at the target thickness. | 2012-05-24 |
20120129360 | Slip-Ring Unit - In a slip-ring unit for electrically connecting two components that are rotatable relative to each other, one component is arranged as a first cable, which has a core and a shield. The slip-ring unit includes first, second and third brush elements as well as first, second and third slip bodies. The first slip body has an opening extending through it axially, through which a first cable extends for transmitting the voltage applied on the core. The second brush element is additionally disposed at a radial offset with respect to the third brush element. | 2012-05-24 |
20120129361 | SOCKET AND DEVICE HAVING THE SOCKET - A socket for providing an electric connection between a package and an electronic circuit board, the socket includes a package mounting area in which the package is mounted and an isotropic elastic body provided on the package mounting area and having a continuous shape along four side walls of the package so as to press the four side walls of the package. | 2012-05-24 |
20120129362 | PRINTED CIRCUIT BOARD CONNECTION ASSEMBLY - In at least one embodiment, a vehicle power module comprises a first printed circuit board (PCB) including a first plurality of electrical components for providing a first voltage and a second voltage. The vehicle power module further comprises a second PCB including a second plurality of electrical components, the second PCB being spaced away from the first printed circuit board and a first connector assembly being coupled to the first PCB and to the second PCB for providing the first voltage to the second PCB. The vehicle power module further comprises a second connector assembly being coupled to the first PCB and to the second PCB for providing the second voltage to the second PCB. The first connector assembly provides the first voltage of up to 14V and the second connector assembly provides the second voltage of 200V or greater. | 2012-05-24 |
20120129363 | ELECTRICAL CONNECTOR - An electrical connector is applied to be soldered and disposed on a printed circuit board, and includes a terminal seat, a terminal and a soldering member. The terminal is disposed in the terminal seat, and includes a main body, a first clamping portion and a second clamping portion. The soldering member is clamped between the first clamping portion and the second clamping portion, and is soldered to the printed circuit board. | 2012-05-24 |
20120129364 | ELECTRIC CONTACT AND SOCKET FOR ELECTRICAL PARTS - An electric contact which can improve the connection stability without increasing the sliding resistance even when the amount of reduction in the lengths of the electric contact is little. A preferred embodiment of the present invention comprises a first plunger which has conductivity and has an external cylinder portion; a second plunger which has internal contact portion to be inserted into the external cylinder portion, is interlinked with the first plunger in an extensible manner and has conductivity; and a coil spring which urges the first and second plungers toward a direction to separate them. The internal contact portion has a taper shape which expands towards the lower end from the upper end, and is formed so as to contact with the internal surface of the external cylinder portion and conduct to the external cylinder portion. | 2012-05-24 |
20120129365 | SAFETY ELECTRICAL OUTLET AND SWITCH SYSTEM - An electrical box is mounted on a wall stud, and a wiring panel is installed within the electrical box so as to partition the interior of the electrical box into a user inaccessible wiring compartment and a user accessible module compartment. A protective cover is attached to the wiring panel so as to protect the wiring panel during a makeup phase of wall panel installation and painting. After the makeup phase, the protective cover is removed from the wiring panel and a module having a user operable electrical function is mounted to the wiring panel within the user accessible module compartment. | 2012-05-24 |
20120129366 | ELECTRICAL DEVICE - The electrical device ( | 2012-05-24 |
20120129367 | NETWORK COMPONENT COMPRISING AN ELECTRICAL DEVICE - A network component includes an electrical device ( | 2012-05-24 |
20120129368 | Connector Device for Electronic Modules in Automation Systems - A connector device for electronic modules including a housing, i.e., in automation systems, having a termination panel with plug-in locations for wiring, wherein the termination panel is pivotally guidable onto the electronic module, and wherein the connector device is pivotable to a pre-wiring position outside the housing to provide access to the plug-in locations of the termination panel. | 2012-05-24 |
20120129369 | ELECTRIC VEHICLE BREAKAWAY CABLE - A breakaway cable for an electric vehicle charging system comprises a female portion connected to a first cable and a male portion connected to a second cable. The female portion comprises a tang located at an end of the female portion. The male portion is configured to receive the female portion and comprises a catch and a lip, both the catch and the lip being located on an inner surface of the male portion. Upon engagement of the tang with the lip, the tang is disengagable from the lip by application of force. The tang is disengagable from the catch by further application of force. | 2012-05-24 |
20120129370 | CARD CONNECTOR WITH IMPROVED TRAY MEMBER AND METAL COVER - A card connector ( | 2012-05-24 |
20120129371 | ELECTRONIC GAMING MACHINE INTERFACE SYSTEM - An electronic gaming machine interface system including a first circuit board, a bracket coupled to the first circuit board, a fan coupled to the bracket and disposed over the first circuit board, a second circuit board coupled to the bracket, a first cable coupled between a connector of the first circuit board and a connector of the second circuit board; and a second cable coupled between a connector of the first circuit board and a connector of the second circuit board. | 2012-05-24 |
20120129372 | Electrical Installation System And Method - A power-socket variable location system and method provide one or more variably-locatable electrical sockets and data connection points along a wall to enable pins of an electrical plug to be inserted at selectively variable locations along the wall to obtain electrical power. An elongate-electrical-conductor is located along the wall. A conductor-enclosure encases the electrical-conductor to prevents inadvertent contact between a user and the electrically-live conductor inside. One or more power-sockets each have pin-to-conductor-conduction-means that are able to electrically link the elongate-electrical-conductor to pins of an electrical plug inserted into the power-socket. The power-sockets can be selectively attached at any location along the conductor-enclosure such that when the pins of an electrical plug are inserted into the power-sockets, an electrical connection is made between the pins and the power source through the pin-to-conductor-conduction-means and via the elongate-electrical-conductor. One or more data connection points are able to be selectively attached at substantially any location along the conductor-enclosure. | 2012-05-24 |
20120129373 | ELECTRICAL CONNECTOR ASSEMBLY HAVING CONNECTOR SHROUD - An electrical connector assembly is provided including a connector having a mating end. The connector has contacts extending from the mating end. A connector shroud is positioned around the mating end of connector. The connector shroud has an asymmetrical configuration. A mating connector having a mating end is configured to engage the mating end of the connector. The mating connector has mating contacts configured to engage the contacts of the connector. The mating end of the mating connector has an asymmetrical configuration that mirrors the asymmetrical configuration of the connector shroud. The asymmetrical configurations of the mating end of the mating connector and the connector shroud align the mating connector with the connector in a single orientation. | 2012-05-24 |
20120129374 | TULIP CONTACT AND ELECTRICAL CONTACT SYSTEM FOR SWITCHING DEVICE - A tulip contact comprises a plurality of outer contact fingers and inner contact fingers. The outer contact fingers forming a shape of the outer surface of fixed contact in order to make the contact surface of each of these fingers contact with the outer surface of fixed contact. The inner contact fingers forming a shape of the inner surface of fixed contact in order to make the contact surface of each of these fingers contact with the inner surface of fixed contact. Each said contact finger comprises a first contact bulge for contacting with the surfaces of the fixed contact, and a second contact bulge for contacting with the bushing. And each said contact bulge comprises a contact slot on its surface. The first contact bulges of the outer contact fingers are not at the same cross section with the first contact bulges of the inner contact fingers. | 2012-05-24 |
20120129375 | TABBED CONNECTOR INTERFACE - An electrical connector interface has a male portion and a female portion. The male portion provided with at least three outer diameter radial projecting connector tabs and a conical outer diameter seat surface at an interface end. A lock ring provided with a stop shoulder and at least three radial inward coupling tabs at the interface end seats around the male portion, the stop shoulder abutting the connector tabs, a tab seat provided between the coupling tabs and the stop shoulder. The female portion provided with at least three outer diameter radial projecting base tabs and an annular groove open to the interface end with an outer sidewall dimensioned to mate with the conical outer diameter seat surface. The base tabs engage the coupling tabs when the lock ring is rotated to insert the base tabs into the tab seat, retaining the outer diameter seat surface against the outer sidewall. | 2012-05-24 |
20120129376 | ELECTRICAL CONNECTOR - An electrical connector comprises a main body, a pair of first arm members extending from two opposite ends of the main body, and a pair of second arm members extending from the two opposite ends of the main body. The main body includes a front side having a lower region extending between the pair of first arm members and an upper region extending between the pair of second arm members, a first receiving slot formed on the lower region, and a second receiving slot formed on the upper region. Each of the first and second arm members includes an interfering portion, wherein the interfering portion of the second arm member is able to engage with the interfering portion of the respective first arm member when the respective first arm member moves toward an unlatched position. | 2012-05-24 |
20120129377 | Card-Edge Connector - A card-edge connector is provided for securing and electrically connecting an electronic card to a circuit board. The card-edge connector includes an insulating housing a pair of arms, and a pair of card-latching members. The insulating housing includes a receiving wall defining a slot there within. Each arm extends from ends of the receiving wall. A supporting base is disposed on and extending along a first side of each arm, and a guiding rail disposed on a second side of each arm. Furthermore, a fastener receiving passageway is disposed on each of an upper surface and a lower surface of each of the pair of arms. | 2012-05-24 |
20120129378 | BATTERY CHARGER HAVING HANDLE THAT INCLUDES LIGHT SOURCE THAT EMITS LIGHT THROUGH APERTURE IN HANDLE CONNECTOR - An electric vehicle charge coupler for both mechanically and electrically coupling and decoupling a charger to a vehicle includes a handle. The handle includes a handle connector configured for manually coupling and decoupling the handle with an inlet connector disposed on the vehicle. The handle connector further defines an aperture. The handle also includes a light source configured for activation to emit light. When the light source is activated, light emits from the light source and passes through the aperture to illuminate an area directionally out from the aperture away from the handle connector. | 2012-05-24 |
20120129379 | Socket | 2012-05-24 |
20120129380 | Locking Arrangement for a Plug Apparatus of an Electronic Assembly in Automation Technology - A locking arrangement for a plug apparatus which can be swiveled into an electronic assembly with an unlocking slide fastened to the plug apparatus, and is in operative connection with a snap hook arranged on a catch. | 2012-05-24 |
20120129381 | LEVER-TYPE CONNECTOR - A housing ( | 2012-05-24 |
20120129382 | HIGH DATA-RATE CONNECTOR - A plug connector is provided that can be electrically coupled to wires provided in a cable. The connector includes a leadframe that supports contacts and insulation displacement terminals in electrical communication. The connector includes a wire module that includes wire channels. A cage is provided to support the leadframe and the wire module. When wires from the cable are inserted into the wire channels, the wire module can be translated so that the insulation displacement terminals engage the wires. In an embodiment, the electrical path between a contact and a corresponding insulation displacement terminal can extend through magnetics and the magnetics can help increase the signal to noise ratio. | 2012-05-24 |
20120129383 | METHOD AND APPARATUS FOR COAXIAL ULTRASONIC WELDING INTERCONNECTION OF COAXIAL CONNECTOR AND COAXIAL CABLE - A coaxial connector for interconnection with a coaxial cable with a solid outer conductor by ultrasonic welding is provided with a monolithic connector body with a bore. An annular flare seat is angled radially outward from the bore toward a connector end of the connector, the annular flare seat open to the connector end of the connector. An inner conductor cap is provided for interconnection with an inner conductor of the coaxial cable by ultrasonic welding. The ultrasonic welding of each of the inner and outer conductor interconnections may be performed via inner conductor and outer conductor sonotrodes which are coaxial with one another, without requiring the cable and or connector to be removed from their fixture. | 2012-05-24 |
20120129384 | METHOD AND APARATUS FOR RADIAL ULTRASONIC WELDING INTERCONNECTED COAXIAL CONNECTOR - A coaxial connector assembly for interconnection with a coaxial cable with a solid outer conductor is provided with a monolithic connector body with a bore. A mating surface with a decreasing diameter toward a connector end is provided on an outer diameter of the connector body proximate the connector end. An overbody may be provided overmolded upon a cable end of the connector body. An interface end may be seated upon the mating surface, the interface end provided with a desired connection interface. The interface end may be permanently coupled to the mating surface by a molecular bond interconnection. In a method of interconnection, the interface end is coupled to the mating surface by application of radial ultrasonic welding. | 2012-05-24 |
20120129385 | COAXIAL CABLE CONDUCTIVE TAPE WITH A METAL LAYER SURROUNDING A VISUALLY CONTRASTING POLYMER STRENGTH LAYER - A conductive tape for a coaxial cable with a metal layer surrounding a visually contrasting polymer strength layer. In one example embodiment, a conductive tape for use in a coaxial cable includes an inner metal layer, an outer metal layer, and a polymer strength layer positioned between and adjacent to the inner and outer metal layers. The color or brightness of the polymer strength layer visually contrasts with the outer metal layer. | 2012-05-24 |
20120129386 | CONNECTOR ASSEMBLY AND RECEIVING DEVICE THEREOF - A connector assembly includes a receiving device, a first connector, and a second connector. The receiving device includes an accommodating portion, and a first and a second raised portions extending from a first side of the accommodating portion. The first and second raised portions each define a receiving space. The first connector is detachably mounted in the receiving space of the first raised portion. The second connector is detachably mounted in the receiving space of the second raised portion. | 2012-05-24 |
20120129387 | COAXIAL CONNECTOR WITH ENHANCED SHIELDING - A male F-Type coaxial cable connector has an improved RF shield including a bridge located between and electrically interconnecting a connector fastening nut and a connector body portion. | 2012-05-24 |
20120129388 | Laser Weld Coaxial Connector and Interconnection Method - A coaxial connector for interconnection with a coaxial cable with a solid outer conductor by laser welding is provided with a monolithic connector body with a bore. A sidewall of the bore is provided with an inward annular projection angled toward a cable end of the bore. A sidewall of the inward annular projection and the sidewall of the bore form an annular laser groove open to a cable end of the bore. The annular laser groove is dimensioned with a taper at a connector end of the laser groove less than a thickness of a leading end of the outer conductor. The taper provides an annular material chamber between the leading end of the outer conductor, when seated in the laser groove, and the connector end of the laser groove. | 2012-05-24 |
20120129389 | FRICTION WELD COAXIAL CONNECTOR AND INTERCONNECTION METHOD - A coaxial connector for interconnection with a coaxial cable with a solid outer conductor by friction welding is provided with a monolithic connector body with a bore. A sidewall of the bore is provided with an inward annular projection angled toward a cable end of the bore. A sidewall of the inward annular projection and the sidewall of the bore form an annular friction groove open to a cable end of the bore. The annular friction groove is dimensioned with a taper at a connector end of the friction groove less than a thickness of a leading end of the outer conductor. The taper provides an annular material chamber between the leading end of the outer conductor, when seated in the friction groove, and the connector end of the friction groove. | 2012-05-24 |
20120129390 | ULTRASONIC WELD COAXIAL CONNECTOR AND INTERCONNECTION METHOD - A coaxial connector for interconnection with a coaxial cable with a solid outer conductor by ultrasonic welding is provided with a monolithic connector body with a bore. An annular flare seat is angled radially outward from the bore toward a connector end of the connector; the annular flare seat open to the connector end of the connector. The flare seat may be provided with an annular flare seat corrugation. | 2012-05-24 |
20120129391 | Connector And Coaxial Cable With Molecular Bond Interconnection - A coaxial connector in combination with a coaxial cable is provided with an inner conductor supported coaxial within an outer conductor, a polymer jacket surrounding the outer conductor. A unitary connector body with a bore is provided with an overbody surrounding an outer diameter of the connector body. The outer conductor is inserted within the bore. A molecular bond is formed between the outer conductor and the connector body and between the jacket and the overbody. An inner conductor end cap may also be provided coupled to the end of the inner conductor via a molecular bond. | 2012-05-24 |
20120129392 | FLUIDPROOF CONNECTOR - A waterproof ( | 2012-05-24 |
20120129393 | INTEGRATED CONNECTOR - The connector contains an insulating body, a base board, a first terminal set, and a second terminal set. The insulating body has a tongue piece and, parallel to the tongue piece, a chamber with a front opening for housing the base board. The base board has a differential terminal set conforming to a memory card transmission interface such as T-FLASH. On a top side of the base board, there are a number of first conduction terminals for connecting the first terminal set. Correspondingly, on a bottom side of the base board, there are a number of second conduction terminals for connecting the second terminal set. | 2012-05-24 |
20120129394 | Electrical Connector System - An electrical connector system for mounting to a substrate is disclosed. The electrical connector system may include a plurality of wafer assemblies defining a mating end and a mating end. Each wafer assembly may include a first overmolded array of electrical contacts, each electrical contact defining an electrical mating connector extending past an edge of the overmold of the first overmolded array of electrical contacts at the mating end of the wafer assembly; a first ground shield configured to be assembled with the first overmolded array of electrical contacts; and a second overmolded array of electrical contacts configured to be assembled with the first overmolded array of electrical contacts, each electrical contact defining an electrical mating connector extending past an edge of the overmold of the second overmolded array of electrical contacts at the mating end of the wafer assembly. | 2012-05-24 |
20120129395 | Electrical Connector System - An electrical connector system may include a plurality of wafer assemblies. Each wafer assembly may include a first overmolded array of electrical contacts defining a plurality of apertures; a second overmolded array of electrical contacts configured to be assembled with the first overmolded array of electrical contacts, the second overmolded array of electrical contacts defining a plurality of apertures; and a conductive ground bracket positioned in the wafer assembly between the first overmolded array of electrical contacts and the second array of electrical contacts. The conductive ground bracket defines a first array of ridges, each ridge of the first array of ridges positioned in an aperture of the first overmolded array of electrical contacts. The conductive ground bracket defines a second array of ridges, each ridge of the second array of ridges positioned in an aperture of the second overmolded array of electrical contacts. | 2012-05-24 |
20120129396 | PLUG CONNECTOR HAVING MULTIPLE CIRCUIT BOARDS AND METHOD OF MAKING THE SAME - A plug connector ( | 2012-05-24 |
20120129397 | CABLE CONNECTOR ASSEMBLY HAVING AN IMPROVED GROUNDING MEANS - A cable connector assembly ( | 2012-05-24 |
20120129398 | Shielded Connector with Improved Positioning of the Shield - Connector including a connector body and a shield. The shield includes a shield side wall. The connector body includes at least one side wall provided with an abutment structure extending from this side wall, so as to allow a precise positioning of the shield side wall. | 2012-05-24 |
20120129399 | Connector Assembly - A connector assembly is provided which includes a housing and at least one conductor module. The conductor module comprises at least a first sub-module and a second sub-module attached together to form the conductor module. The conductor module is at least partially received in the housing. The housing and the first sub-module include cooperating positioning structures for positioning the at least one conductor module into the housing such that the position of the second sub-module with respect to the housing is determined by the position of the first sub-module with respect to the housing in at least a first direction (X; Z). A connector assembly is also provided in which at least one contact includes at least one contact beam of which a part is resiliently displaceable substantially parallel to a side wall of the housing from a preload position to a second position for receiving a mating contact. The housing includes a stand-off structure configured to cooperate with at least a portion of the contact to provide and maintain a separation between at least the contact portion and the first side wall in and between the preload position and the second position. | 2012-05-24 |
20120129400 | FLEXIBLE CONCENTRATED WIRING CONNECTOR - Provided is a flexible concentrated wiring connector, wherein a terminal section of a flexible concentrated wiring member is prevented from being deformed and the flexible concentrated wiring member is also prevented from being damaged, in a case where a terminal connection tool is assembled to the flexible concentrated wiring member. The flexible concentrated wiring connector includes the flexible concentrated wiring member ( | 2012-05-24 |
20120129401 | EXTERNAL ELECTRICAL CONNECTORS FOR SOLAR MODULES - Provided are low profile, water-resistant and touch safe electrical connectors for solar modules. According to various embodiments, the electrical connectors include a low-profile conductive stud, a low-profile sheath that surrounds the stud, and a socket to mate with the stud. According to various embodiments, the sheath and socket mate via keyed inter-engageable features. Also according to certain embodiments, the socket is fastened to the stud and/or sheath via snap fastening. | 2012-05-24 |
20120129402 | RECEPTACLE CONNECTOR HAVING CONTACT MODULES AND PLUG CONNECTOR HAVING A PADDLE BOARD - A connector assembly has a receptacle connector and a plug connector adapted for inserting in the receptacle connector. The receptacle connector ( | 2012-05-24 |
20120129403 | ELECTRIC CONNECTOR - A plug connector includes a housing that includes a plurality of step jaws and terminals that are arranged interposing adjacent step jaws. The plug connector also includes one or more terminals disposed on one or more exposed surfaces of each step jaw. | 2012-05-24 |
20120129404 | Communication Jack Having Layered Plug Interface Contacts - A communication jack, system using the jack, and method of fabricating the jack are disclosed. The jack includes a cavity configured to accept a communication plug to form a communication connector. The jack includes a plurality of plug interface contacts that extend into the cavity such that a plug inserted into the cavity makes electrical contact with the plug interface contacts at plug/jack interfaces of the plug interface contacts. One or more of the plug interface contacts is formed from multiple conductive layers. The conductive layers are movable relative to each other at at least one end. A dielectric layer or flexible printed circuit board may be disposed between the conductive layers. | 2012-05-24 |
20120129405 | Modular electric socket assembly and assembly method thereof - A modular electric socket assembly comprises a male plug unit electrically connected to a cover plate member having at least one electric socket, and a female plug unit retained in a wall and electrically connected to an electric supply system. Pins of the male plug unit are coupleable with corresponding cavities of the female plug unit. In one embodiment, the socket assembly is a strip assembly having a panel on which are printed a plurality of conductive elements, a cover plate member having at least two socket regions and attached to the panel, and a male plug unit interconnected with the panel. The conductive elements are arranged so as to connect in electrically conductable alignment a user device coupled to a selected socket region, each contact of the panel associated with the selected socket region, conductors associated with the male plug unit, and conductors associated with the female plug unit. | 2012-05-24 |
20120129406 | CONNECTOR - A connector has a top housing, a bottom housing coupled with the top housing, a plurality of terminals mounted in the top housing. The terminal has a base slice. The base slice is bent perpendicularly to form a first holding slice which has lateral sides extended outward to form a pair of fixing slices. The top housing is recessed to form a plurality of receiving passages. The receiving passage has a bottom thereof recessed to form a pair of fixing recesses. The terminal is received in the receiving passage. The fixing slices are received in the fixing recesses, which prevents the soldering slice to be knocked while assembling the bottom housing to the top housing. | 2012-05-24 |
20120129407 | POWER TERMINAL - An electrical connector formed to have at least one or more pairs of opposing legs extending from a body portion where each leg extends to a contact point where an inner surface of each opposing leg contact. A spring clip can be positioned over one or more of the opposing legs to increase a compressive force. The spring clip may include an alignment feature to limit clip rotating and/or pitching. | 2012-05-24 |
20120129408 | CONTACT AND ELECTRICAL CONNECTING APPARATUS - A contact according to the present invention comprises a plate-shaped first plunger contacting one member, a plate-shaped second plunger contacting the other member in a state of being overlapped with the first plunger and conducting electricity between the one member and the other member in cooperation with the first plunger, and a compression coil spring which is a member coupling the first plunger with the second plunger in a state where contact pieces thereof are in opposite directions from each other, covering outer circumferences of coupling portions of the first plunger and the second plunger, abutting on spring receiving portions of the respective plungers, and supporting the respective plungers to be relatively slidable. In an electrical connecting apparatus, the contacts are incorporated. | 2012-05-24 |
20120129409 | CONNECTOR AND CONTACT ASSEMBLIES FOR MEDICAL DEVICES - A contact assembly, which may be included in a connector assembly for a connector module of a medical device, includes one or more resilient contact members; each contact member may comprise a coiled wire having a first stiffness and a second stiffness. The assembly may further include a plug member associated with each contact member. Each contact member may be mounted in the assembly via insertion into a corresponding channel of a mounting member, such that a first terminal end of the contact member abuts a terminal surface of the channel. If included, the plug member makes electrical contact with a second terminal end of the inserted contact member, and is coupled to the mounting member. A contact surface of the mounted contact member is exposed within a connector bore of the mounting member, through an opening in the channel. | 2012-05-24 |
20120129410 | AUTOMATIC DOCKING SYSTEM - A programmed control uses distance sensor information to activate thrusters to move a vessel sideways up to a set distance away from a dock and maintain that distance automatically with no human intervention. At close distances a single propeller is used guided by a high bandwidth radar sensor. | 2012-05-24 |
20120129411 | MARINE PROPULSION DEVICE - In a hybrid type marine propulsion device including a main engine and a motor, low fuel consumption is realized by a compact configuration and highly efficient drive control. | 2012-05-24 |
20120129412 | Buoyancy-Enhanced Saftey Garment - The present invention discloses a personal garment constructed with a buoyancy-enhancing feature whose purpose is to provide the garment wearer with the ability to float on the surface of the water for an extended period of time with minimal expenditure of energy in a water environment in order to prevent drowning. The buoyancy enhancing feature may comprise several configurations. One configuration consists of a compressed fluid canister apparatus constructed within the garment that is activated by the garment wearer. Another configuration comprises a garment constructed in part of a fabric manufactured with minute particles of a buoyancy-enhancing material encapsulated within the fabric substance. Another configuration consists of the incorporation of one or more removable buoyancy-enhancing panels into pockets constructed within the garment. In each configuration, the buoyancy enhancement is achieved by increasing the composite volume and decreasing the composite density of the combined garment and the garment wearer. The invention is intended to increase the safety of individuals participating in water-related activities such as swimming or boating in an ocean, lake, or river, where the ability to remain in a floating position on the surface of the water without expending additional effort for an extended period of time could make a critical difference in the outcome of an emergency situation. | 2012-05-24 |