| 17th week of 2013 patent applcation highlights part 15 |
| Patent application number | Title | Published |
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| 20130099159 | PRODUCTION OF METAL OR METALLOID NANOPARTICLES - One embodiment may include a method of making nanoparticles comprising elemental metals or metalloids and/or alloys thereof. The method may include reducing a metal halide or a metalloid halide with an alkali metal to produce a reaction product comprising particles of the desired metal or metalloid and a halide salt. One embodiment may include introducing reactants to each other in the presence of a non-reactive solvent and/or inducing cavitation in the reactants and/or the non-reactive solvent when present. Certain metals or metalloids such as tin, aluminum, silicon, antimony, indium or bismuth may be useful in electrochemical cells such as lithium-ion cells when produced by these illustrative methods. One embodiment of a battery electrode may include nanoparticles that may be produced by these or other methods. | 2013-04-25 |
| 20130099160 | Materials from Post-Industrial Absorbent Product Waste - The present invention relates to plastic composites that have been manufactured from post-industrial absorbent waste material. The waste material is transformed into densified particles that comprises from about 0% to about 65% of an absorbent core material, about 20% to about 45% of thermoplastic polymer, about 0% to about 10% inorganic filler particles, about 0% to about 10% elastics, and about 0% to about 10% adhesives. Also provided is a method for manufacturing a plastic composite by extruding or injection molding densified particles that have been formed from the post-industrial absorbent waste material. | 2013-04-25 |
| 20130099161 | CORE/SHELL LANTHANUM CERIUM TERBIUM PHOSPHATE, AND PHOSPHOR HAVING IMPROVED THERMAL STABILITY AND INCLUDING SAID PHOSPHATE - A phosphate particle with a mean diameter of from 1.5 μm to 15 μm, which has an inorganic core and a shell that covers the inorganic core uniformly over a thickness of no less than 300 nm, is described. The shell can have a lanthanum cerium terbium phosphate of formula La | 2013-04-25 |
| 20130099162 | BORATE BASED RED LIGHT EMITTING MATERIAL AND PREPARATION METHOD THEREOF - A borate based red light emitting material is provided, which comprises a core and a shell covering the said core. Said core is nanometer metal particle, and the shell is fluorescent powder having the chemical formula of (Y | 2013-04-25 |
| 20130099163 | NEAR INFRARED DOPED PHOSPHORS HAVING AN ALKALINE GALLATE MATRIX - Phosphors based on doping of an activator (an emitter) into a host matrix are disclosed herein. Such phosphors include alkaline gallate phosphors doped with Cr | 2013-04-25 |
| 20130099164 | USE OF A PRESSURIZED CERAMIC HEAT EXCHANGER AS AN INTEGRAL PART OF A PLANT FOR CONVERTING SILICON TETRACHLORIDE TO TRICHLOROSILANE - The invention relates to the use of a ceramic heat exchanger as an integral part of a process for catalytic dehalogenation of silicon tetrachloride to trichlorosilane in the presence of hydrogen, wherein the product gas and the reactant gases are conducted as pressurized streams through the heat exchanger, and the heat exchanger comprises heat exchanger elements made from ceramic material. | 2013-04-25 |
| 20130099165 | Reforming Exchanger With Integrated Shift Conversion - Reforming exchangers for syngas production are provided. The reforming exchangers can have a shell-and-tube configuration and include a shift catalyst on the shell side of the exchanger to reduce a carbon monoxide concentration in a shell side product gas mixture. Processes for forming syngas using the reforming exchangers are also provided. | 2013-04-25 |
| 20130099166 | Reforming Exchanger System With Intermediate Shift Conversion - A reforming exchanger system for syngas production is provided. The reforming exchanger system can have a first and a second reforming exchanger, each with a shell-and-tube configuration, and a shift reactor located intermediate to the first and second reforming exchangers to reduce carbon monoxide concentration in the outlet gas. Processes for forming syngas using the reforming exchanger systems described herein are also provided. | 2013-04-25 |
| 20130099167 | METHOD FOR PROCESSING FISCHER-TROPSCH OFF-GAS - A method for producing a gas comprising at least 80 vol % carbon monoxide from a Fischer-Tropsch off-gas comprising: (1) feeding Fischer-Tropsch off-gas through a column comprising an adsorbent bed at high pressure and discharging effluent; (2) reducing the pressure in the column and the bed slightly; (3) rinsing the column and the adsorbent bed with methane or carbon dioxide; (4) rinsing the column and the adsorbent bed with carbon dioxide; (5) reducing the pressure of the column and adsorbent bed to a low pressure; (6) rinsing the column and adsorbent bed with a mixture of hydrogen and nitrogen; (7) pressurizing the column and adsorbent bed to a high pressure using a mixture of hydrogen and nitrogen. The carbon monoxide rich product stream obtained in step (3) can be sent as feed to a Fischer-Tropsch reaction. In an embodiment, a gas comprising at least 80 vol % hydrogen is also produced. | 2013-04-25 |
| 20130099168 | TWO STAGE DRY FEED GASIFICATION PROCESS - A dry feed two stage gasification system and process is disclosed for gasifying feedstock such as carbonaceous materials with improved energy efficiency, along with reductions in feedstock consumption and carbon dioxide emissions. The feedstock is first dried and pretreated with the hot syngas in the upper section of the gasifier to generate a dry char that is low in volatile-matter content. This dry char is sent to the first stage of a two stage gasifier where it reacts with oxygen in the presence of steam to produce a hot syngas stream. | 2013-04-25 |
| 20130099169 | METHODS AND COMPOSITIONS FOR PASSIVATING HEAT EXCHANGER SYSTEMS - A process for extending the life of coolant fluids by passivating surfaces of components and parts in heat exchanger systems that employ coolants for heat transfer. In the method, heat exchanger parts with metal surfaces which chemically and detrimentally interact with additives in coolant fluids in the heat exchanger system are treated by contacting the metal surfaces with a phosphate-containing solution for the phosphate-containing solution to passivate the metal surface for subsequent contact with the coolant fluids. | 2013-04-25 |
| 20130099170 | CARBONACEOUS NANO-SCALED MATERIALS HAVING HIGHLY FUNCTIONALIZED SURFACE - A method and composition wherein carbonaceous nano-scaled filler material is subjected to atmospheric plasma treatment using carbon monoxide as the active gas. The treatment with carbon monoxide plasma has been found to significantly increase the incorporation of oxygen groups on the surface of the filler material without degrading the surface and thus serves to increase wettability and dispersion throughout the matrix. The composite that incorporates the treated filler material has enhanced mechanical and electrical properties. | 2013-04-25 |
| 20130099171 | MATERIALS FOR ORGANIC ELECTROLUMINESCENT DEVICES - The present invention relates to compounds of the formula (1) which are suitable for use in electronic devices, in particular organic electroluminescent devices, and to electronic devices which comprise these compounds. | 2013-04-25 |
| 20130099172 | PHOSPHORATED COMPOSITE AND ANODE USING THE SAME - A phosphorated composite capable of electrochemical reversible lithium storage includes a conductive matrix and red phosphorus. The conductive matrix includes a material being selected from the group consisting of conductive polymer and conductive carbonaceous material. A weight percentage of the conductive matrix in the phosphorated composite ranges from about 10% to about 85%. A weight percentage of the red phosphorus in the phosphorated composite ranges from about 15% to about 90%. An anode using the phosphorated composite is also provided. | 2013-04-25 |
| 20130099173 | METHOD FOR MAKING PHOSPHORATED COMPOSITE - A method for making the phosphorated composite e is provided. First, a mixture is obtained by mixing a source material with red phosphorus. The weight ratio of the source material to the red phosphorus ranges from about 1:10 to about 5:1. Second, the mixture is dried in an inert atmosphere or vacuum. Third, the mixture is heated in a reacting room filled with an inert atmosphere so that the red phosphorus sublimes. Finally, the reacting room is cooled down. | 2013-04-25 |
| 20130099174 | LITHIUM MANGANESE BORATE COMPOUNDS - The present invention generally relates to certain lithium materials, including lithium manganese borate materials. Such materials are of interest in various applications such as energy storage. Certain aspects of the invention are directed to lithium manganese borate materials, for example, having the formula Li | 2013-04-25 |
| 20130099175 | ELECTRICALLY CONDUCTIVE PTFE TAPE - The present invention is directed to a fluoropolymer tape having an electrically conductive surface. More specifically, the present invention is directed to a polytetrafluoroethylene (PTFE) tape and method for producing an electrically conductive tape by blending vapor-grown carbon fiber or carbon nanotubes or combinations of both with PTFE. | 2013-04-25 |
| 20130099176 | ELECTRODE COMPOSTION FOR INKJET PRINTING AND METHOD FOR MANUFACTURING ELECTRODE FOR DYE-SENSITIZED SOLAR CELL USING THE SAME - The present invention provides an electrode composition for inkjet printing, which can be used to form an electrode having a uniform thickness on a curved substrate by inkjet printing, and a method for manufacturing an electrode for a dye-sensitized solar cell using the same. In particular, the present invention provides an electrode composition for inkjet printing, the electrode composition including about 10 to 40 wt % of platinum nanoparticles, about 1 to 10 wt % of polymer surface stabilizer, and about 40 to 89 wt % of solvent. | 2013-04-25 |
| 20130099177 | THICK FILM SILVER PASTE CONTAINING AL2O3 AND LEAD-TELLURIUM-OXIDE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - The present invention is directed to a thick film silver paste comprising (i) silver, (ii) Al | 2013-04-25 |
| 20130099178 | THICK FILM SILVER PASTE AND ITS USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES - The present invention is directed to an electroconductive silver thick film paste composition comprising Ag, a glass frit and rhodium resinate, Cr | 2013-04-25 |
| 20130099179 | METAL NANOPARTICLE COMPOSITIONS FOR REFLECTIVE FEATURES - A composition for the fabrication of reflective features using a direct-write tool is disclosed. The composition comprises metal nanoparticles having an average particle size less than 300 nm and which carry thereon a polymer for substantially preventing agglomeration of the nanoparticles, wherein the nanoparticles exhibit a metal-polymer weight ratio of 100:1 to 10:1. The composition further includes a vehicle for forming a dispersion with the metal nanoparticles. A number of electronic devices comprising a reflective layer formed from the composition are also disclosed. One example case provides an electronic device having a reflective electrode. The reflective electrode comprises a percolation network of the metal nanoparticles embedded in a matrix of the polymer and having an average particle size of less than 300 nm, wherein the reflective electrode is reflective in the visible light range and does not diffract incident light. | 2013-04-25 |
| 20130099180 | USE OF ALKALINE-EARTH METALS TO REDUCE IMPURITY INCORPORATION INTO A GROUP-III NITRIDE CRYSTAL GROWN USING THE AMMONOTHERMAL METHOD - Alkaline-earth metals are used to reduce impurity incorporation into a Group-III nitride crystal grown using the ammonothermal method. | 2013-04-25 |
| 20130099181 | CONDUCTIVE PASTE COMPOSITION FOR SOLAR CELL - A conductive paste composition for a solar cell includes a conductive powder, a glass frit, and a vehicle, the glass frit consisting of glass containing 0.6 to 18.0 (mol %) Li | 2013-04-25 |
| 20130099182 | LIQUID COMPOSITIONS USED AS INSULATING AND HEAT TRANSFER MEANS, ELECTRICAL DEVICES CONTAINING SAID COMPOSITIONS AND PREPARATION METHOD FOR SUCH COMPOSITIONS - The invention relates to a liquid composition that is a mixture of at least one natural triglyceride and at least one fatty acid ester different from triglycerides, wherein the fatty acids are derived from at least one vegetable oil or another equivalent natural resource. | 2013-04-25 |
| 20130099183 | METHOD FOR PREPARATION OF AQUEOUS NANO-PIGMENT DISPERSION - Embodiments of the invention disclose a method for preparing an aqueous nano-pigment dispersion. The method comprises mixing 2.5 wt %˜40 wt % styrene with polymerization inhibitors removed by evaporation, 2.5 wt %˜20 wt % acrylate monomer, 0.25 wt %˜5 wt % crosslinking monomer, 0.05 wt %˜0.5 wt % emulsification adjuvant, and 0.05 wt %˜0.5 wt % oil soluble initiator, adding 0.25 wt %˜2.5 wt % organic pigments to be dispersed to form an oil phase solution after dissolution; dissolving 0.05 wt %˜2 wt % emulsifier and 0.05 wt %˜2 wt % buffer in 40 wt % wt˜90 wt % deionized water to form an aqueous solution; mixing the oil phase solution and the aqueous phase solution, and then homogenizing them into fine emulsion; transferring the fine emulsion into a reactor; heating to increase the temperature to initiate the polymerization; after reacting, adding an alkaline soluble monomer; after continuing the reaction, cooling the temperature to the room temperature; adjusting pH to weak alkaline; and filtering to obtain the aqueous nano-pigment dispersion. | 2013-04-25 |
| 20130099184 | POST HANDLING DEVICE - A device for lifting a post out of the ground, including a part for engaging the post and an elongate body having a handle for applying a lever action to the part in order to lift the post from the ground, wherein the part is coupled to a stand and the stand is moveable relative to the body from a stowed condition to a deployed condition whereat the body is pivotally supported above the ground for rotation about the stand in order to effect the lever action. | 2013-04-25 |
| 20130099185 | Louver shade assembly - A canopy tensioner adapted for use with a louver system wherein the canopy tensioner is mounted in pairs on the short and long arms of rib arm unit that traverse the body of the tensioner via an arm connecting chase is connected to a fiber anchor extrusion (keder) and wherein a rotating a nut positioned on the end of the rib arm unit changes the tension on the shade canopy element of the louver system. In an alternative mode, the tensioner unit is adapted for use with shade canopies, wherein the shade canopy is connected to and supported by poles that are connected by headers that are connected at right angles to rafters; support/connector blockes are positioned in the lumen of the rafter thereby connecting the tensioned to the support structure, and the tensioner is also mechanically connected to the front and rear keders of the shade canopy fabric element. | 2013-04-25 |
| 20130099186 | LIFTING OR LOCKING SYSTEM AND METHOD - A lifting mechanism or locking mechanism includes a housing, an axle attached to the housing, and an element including a cam surface mounted for rotation on the axle. The distance between the cam surface and the housing changes between a maximum clearance distance and a minimum clearance distance as the element rotates about the axle. The lifting mechanism also includes a line which can be moved between a first position over the cam surface and a second position. | 2013-04-25 |
| 20130099187 | MULTILAYER STRUCTURE BASED ON A NEGATIVE DIFFERENTIAL RESISTANCE MATERIAL - A multilayer structure is disclosed that includes a conductive layer, a layer of a negative differential resistance (NDR) material disposed above the conductive layer, a layer M | 2013-04-25 |
| 20130099188 | PHASE-CHANGE MEMORY DEVICE HAVING MULTI-LEVEL CELL AND A METHOD OF MANUFACTURING THE SAME - A phase change memory device including a multi-level cell and a method of manufacturing the same are provided. The device includes a first phase-change material layer to which a current is provided from a heating electrode, and a second phase-change material layer formed with continuity to the first phase-change material layer and having a different width from the first phase-change material layer, and to which a current is provided from a heating electrode. | 2013-04-25 |
| 20130099189 | RESISTIVE MEMORY AND METHODS OF PROCESSING RESISTIVE MEMORY - Resistive memory and methods of processing resistive memory are described herein. One or more method embodiments of processing resistive memory include conformally forming a cell material in an opening in an interlayer dielectric such that a seam is formed in the cell material, forming a conductive pathway by modifying the seam, and forming an electrode on the cell material and the seam. | 2013-04-25 |
| 20130099190 | NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A diode may be foamed within a molding layer on a substrate. A conductive buffer pattern having a greater planar area than the diode may be on the diode and molding layer. An electrode structure may be on the conductive buffer pattern. A data storage pattern may be on the electrode structure. One lateral surface of the conductive buffer pattern may be vertically aligned with one lateral surface of the electrode structure. | 2013-04-25 |
| 20130099191 | Resistive switching memory elements having improved switching characteristics - Resistive-switching memory elements having improved switching characteristics are described, including a memory element having a first electrode and a second electrode, a switching layer between the first electrode and the second electrode comprising hafnium oxide and having a first thickness, and a coupling layer between the switching layer and the second electrode, the coupling layer comprising a material including metal titanium and having a second thickness that is less than 25 percent of the first thickness. | 2013-04-25 |
| 20130099192 | Electronic Devices, Memory Devices and Memory Arrays - Some embodiments include electronic devices having two capacitors connected in series. The two capacitors share a common electrode. One of the capacitors includes a region of a semiconductor substrate and a dielectric between such region and the common electrode. The other of the capacitors includes a second electrode and ion conductive material between the second electrode and the common electrode. At least one of the first and second electrodes has an electrochemically active surface directly against the ion conductive material. Some embodiments include memory cells having two capacitors connected in series, and some embodiments include memory arrays containing such memory cells. | 2013-04-25 |
| 20130099193 | Phase Change Memory and Manufacturing Method Therefor - The present invention discloses a phase change memory and a manufacturing method thereof. The phase change memory according to the present invention uses top electrodes provided on the top of storage nodes to heat the storage nodes such that a phase change layer in the storage nodes undergoes a phase change. In the phase change memory of embodiments of the present invention, the contact area between the top electrode and the storage node is relatively small, which is good for phase change. Moreover, each column of storage nodes is connected by the same linear top electrode, which can improve photo alignment shift margin. | 2013-04-25 |
| 20130099194 | Method Of Making Graphene Layers, And Articles Made Thereby - There is provided a method for forming a graphene layer. The method includes forming an article that comprises a carbon-containing self-assembled monolayer (SAM). A layer of nickel is deposited on the SAM. The article is heated in a reducing atmosphere and coolded. The heating and cooling steps are carried out so as to convert the SAM to a graphene layer. | 2013-04-25 |
| 20130099195 | Direct Formation of Graphene on Semiconductor Substrates - The invention generally related to a method for preparing a layer of graphene directly on the surface of a semiconductor substrate. The method includes forming a carbon-containing layer on a front surface of a semiconductor substrate and depositing a metal film on the carbon layer. A thermal cycle degrades the carbon-containing layer, which forms graphene directly upon the semiconductor substrate upon cooling. In some embodiments, the carbon source is a carbon-containing gas, and the thermal cycle causes diffusion of carbon atoms into the metal film, which, upon cooling, segregate and precipitate into a layer of graphene directly on the semiconductor substrate. | 2013-04-25 |
| 20130099196 | Semiconductor-Graphene Hybrids Formed Using Solution Growth - A novel method for fabrication of hybrid semiconductor-graphene nanostructures in large scale by floating graphene sheets on the surface of a solution is provided. Using this approach, crystalline ZnO nano/micro-rod bundles on graphene fabricated using chemical vapor deposition were prepared. UV detectors fabricated using the as-prepared hybrid ZnO-graphene nano-structure with graphene being one of the two electrodes show high sensitivity to ultraviolet light, suggesting the graphene remained intact during the ZnO growth. This growth process provides a low-cost and robust scheme for large-scale fabrication of semiconductor nanostructures on graphene and may be applied for synthesis of a variety of hybrid semiconductor-graphene nano-structures demanded for optoelectronic applications including photovoltaics, photodetection, and photocatalysis. | 2013-04-25 |
| 20130099197 | DOPED GRAPHENE ELECTRONIC MATERIALS - A graphene substrate is doped with one or more functional groups to form an electronic device. | 2013-04-25 |
| 20130099198 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting element, including a first semiconductor layer with a first conductive type, a second semiconductor layer with a second conductive type, a semiconductor light emitting layer provided between the first semiconductor layer and the second semiconductor layer, a first electrode having a mesh-shaped structure with a plurality of mesh shapes provided on the first semiconductor layer opposed to the semiconductor light emitting layer, a plurality of second electrodes provided on the second semiconductor layer opposed to the semiconductor light emitting layer, each of the second electrode having a dot shape and being superimposed with the center of each of the mesh shapes in plain view with parallel to a surface of the second semiconductor layer. | 2013-04-25 |
| 20130099199 | NANOROD LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A nanorod light emitting device and a method of manufacturing the same. The nanorod light emitting device may include at least one nitride semiconductor layer, light emitting nanorods formed on the nitride semiconductor layer and spaced apart from each other, and a first filling layer, a conductive layer, and a second filling layer formed in spaces between the light emitting nanorods. | 2013-04-25 |
| 20130099200 | LAYER ASSEMBLY - A device including a locally modified buried first layer. A second layer is arranged on top of the first layer. The first layer includes at least one modified section and at least one unmodified section. The modified material of the locally modified buried first layer changes or induces mechanical strain in a portion of the second layer which is arranged above the at least one modified section. At least one nanostructure is placed on top of the second layer in an area, which is located above the at least one unmodified section of the first layer or adjacent thereto, said at least one nanostructure being formed by a strain-sensitive third material deposited on the locally strained second layer. | 2013-04-25 |
| 20130099201 | LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer. | 2013-04-25 |
| 20130099202 | SUPPRESSION OF RELAXATION BY LIMITED AREA EPITAXY ON NON-C-PLANE (In,Al,B,Ga)N - An (AlInGaN) based semiconductor device, including one or more (In,Al)GaN layers overlying a semi-polar or non-polar III-nitride substrate or buffer layer, wherein the substrate or buffer employs patterning to influence or control extended defect morphology in layers deposited on the substrate; and one or more (AlInGaN) device layers above and/or below the (In,Al)GaN layers. | 2013-04-25 |
| 20130099203 | PHOTODETECTOR AND METHOD OF MANUFACTURING THE PHOTODETECTOR - A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 μm to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 μm and 2.0 μm. The ratio of the sensitivity at the wavelength of 1.3 μm to the sensitivity at the wavelength of 2.0 μm is not smaller than 0.5 but not larger than 1.6. | 2013-04-25 |
| 20130099204 | CARBON NANOTUBE TRANSISTOR EMPLOYING EMBEDDED ELECTRODES - Carbon nanotubes can be aligned with compatibility with semiconductor manufacturing processes, with scalability for forming smaller devices, and without performance degradation related to structural damages. A planar structure including a buried gate electrode and two embedded electrodes are formed. After forming a gate dielectric, carbon nanotubes are assembled in a solution on a surface of the gate dielectric along the direction of an alternating current (AC) electrical field generated by applying a voltage between the two embedded electrodes. A source contact electrode and a drain contact electrode are formed by depositing a conductive material on both ends of the carbon nanotubes. Each of the source and drain contact electrodes can be electrically shorted to an underlying embedded electrode to reduce parasitic capacitance. | 2013-04-25 |
| 20130099205 | HOMOGENEOUS MULTIPLE BAND GAP DEVICES - An electrical device comprising (A) a substrate having a surface and (B) a nanohole superlattice superimposed on a portion of the surface is provided. The nanohole superlattice comprises a plurality of sheets having an array of holes defined therein. The array of holes is characterized by a band gap or band gap range. The plurality of sheets forms a first edge and a second edge. A first lead comprising a first electrically conductive material forms a first junction with the first edge. A second lead comprising a second electrically conductive material forms a second junction with the second edge. The first junction is a Schottky barrier with respect to a carrier. In some instances a metal protective coating covers all or a portion of a surface of the first lead. In some instances, the first lead comprises titanium, the second lead comprises palladium, and the metal protective coating comprises gold. | 2013-04-25 |
| 20130099206 | HETEROCYCLIC COMPOUND, ORGANIC LIGHT-EMITTING DIODE INCLUDING THE HETEROCYCLIC COMPOUND, AND FLAT DISPLAY DEVICE INCLUDING THE ORGANIC LIGHT-EMITTING DIODE - A heterocyclic compound represented by Formula 1 below, and an organic light-emitting diode including the heterocyclic compound, and a flat display device including the organic light-emitting diode. | 2013-04-25 |
| 20130099207 | BIPOLAR COMPOUND AS A HOST MATERIAL FOR ORGANIC LIGHT EMITTING DIODES - The present invention provides a bipolar compound represented by formula (I) and the derivatives thereof as a host material having excellent bipolar transporting properties for organic light-emitting diodes (OLEDs). The present invention also relates to a device including at least a layer of the bipolar compound and/or the derivatives thereof as a host material and a method of making the same. | 2013-04-25 |
| 20130099208 | CONDENSED-CYCLIC COMPOUND, METHOD FOR PREPARING THE CONDENSED-CYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE CONDENSED-CYCLIC COMPOUND - A condensed-cyclic compound represented by Formula 1 below, a method for preparing the condensed-cyclic compound, and an organic light-emitting device including the condensed-cyclic compound. | 2013-04-25 |
| 20130099209 | Dopant for a Hole Conductor Layer for Organic Semiconductor Components, and Use Thereof - The invention relates to novel metal-organic materials for hole injection layers in organic electronic components. For example, in light-emitting components such as organic light diodes (OLED) or organic light-emitting electrochemical cells (OLEEC) or organic field effect transistors or organic solar cells or organic photo detectors. Luminescence (cd/m | 2013-04-25 |
| 20130099210 | Light-Emitting Module and Method for Manufacturing the Same - A light-emitting module with improved light extraction efficiency and reliability is provided. In the light-emitting module, an element substrate with gas barrier properties is used; a light-emitting element is optically connected to one surface side of the element substrate; and a diffuse reflection layer is in contact with the other surface side of the element substrate. The diffuse reflection layer has a diffuse reflectance of greater than or equal to 75% and less than 100%. The light-emitting element includes a layer containing a light-emitting organic compound between a pair of light-transmitting electrodes. The element substrate transmits light emitted from the light-emitting element; the refractive index of the element substrate is different from that of layer containing a light-emitting organic compound by 0.2 or less. | 2013-04-25 |
| 20130099211 | DEVICES HAVING HIGH DIELECTRIC CONSTANT, IONICALLY-POLARIZABLE MATERIALS - An electronic or electro-optic device has a first electrode, a second electrode spaced apart from the first electrode, and a dielectric layer disposed between the first and second electrodes. The dielectric layer has electrically insulating planar layers with intercalated ions therebetween such that the electrically insulating planar layers provide a barrier to impede movement of the intercalated ions to the first and second electrodes under an applied voltage while permitting a polarization of the dielectric layer while in operation. | 2013-04-25 |
| 20130099212 | LIGHT EMITTING DIODE - A light emitting diode that includes: a light source; a buffer layer disposed on the light source and including a first matrix polymer; a polymer layer disposed on the buffer layer and including an organic/inorganic hybrid polymer; and an emission layer disposed on the polymer layer and including a light emitting particle dispersed in a second matrix polymer, wherein one selected from the light source, the buffer layer, the emission layer, and a combination thereof includes one selected from sulfurous component, a nitrogenous component, and a combination thereof. | 2013-04-25 |
| 20130099213 | SEMICONDUCTOR NANOCRYSTAL-POLYMER COMPOSITE, METHOD OF PREPARING THE SAME, AND COMPOSITE FILM AND OPTOELECTRONIC DEVICE INCLUDING THE SAME - A semiconductor nanocrystal-polymer composite including a semiconductor nanocrystal, a polymer comprising a plurality of carboxylate anion groups (—COO | 2013-04-25 |
| 20130099214 | MATERIAL FOR ORGANIC PHOTOELECTRIC DEVICE, AND ORGANIC PHOTOELECTRIC DEVICE INCLUDING THE SAME - A material for an organic photoelectric device includes a compound represented by the following Formula 1: | 2013-04-25 |
| 20130099215 | ORGANIC SEMICONDUCTOR FILM, PRODUCTION METHOD THEREOF, AND CONTACT PRINTING STAMP - Disclosed is an organic semiconductor film ( | 2013-04-25 |
| 20130099216 | ORGANIC ELECTROLUMINESCENT MATERIAL, ORGANIC ELECTROLUMINESCENT ELEMENT, DISPLAY DEVICE AND LIGHTING DEVICE - Disclosed are: an organic EL material which emits light having a short wavelength and has high luminous efficiency and long light emission life; an organic EL element which contains the organic EL material; and a lighting device and a display device, each of which comprises the organic EL element. The organic EL material is a compound represented by Formula ( | 2013-04-25 |
| 20130099217 | DISPLAY APPARATUS - Provided is a display apparatus and a method of manufacture. The display apparatus includes a first substrate with a plurality of organic electroluminescence devices, a second substrate with a color filter, the second substrate facing the first substrate, and an adhesive layer disposed between the first substrate and the second substrate so as to cover the plurality of organic electroluminescence devices, the adhesive layer being made of a material selected from the group consisting of a phenol resin, a melanin resin, an unsaturated polyester resin, an epoxy resin, a silicon resin and a polyurethane resin. | 2013-04-25 |
| 20130099218 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic electro-luminescence device capable of reducing a resistance of a cathode electrode to enhance brightness uniformity at each location within the device is described. The organic electro-luminescence device includes a bank layer formed over a substrate, the bank layer including a first, second, and third portion. A first electrode is formed between the first and second portions of the bank layer. An auxiliary electrode is formed where at least a part of the auxiliary electrode is formed between the second and third portions of the bank layer. A voltage drop prevention pattern is formed on the auxiliary electrode. An organic material layer formed between the first and second portions of the bank layer. A second electrode formed on the organic material layer, where at least a portion of the second electrode is electrically coupled to the auxiliary electrode. | 2013-04-25 |
| 20130099219 | LUMINANCE-ENHANCING POLARISING PLATE FOR AN ORGANIC LIGHT-EMITTING ELEMENT - There is provided a polarizer for organic light emitting diodes (OLED) having improved brightness. The polarizer, which comprises a linear polarizer and a ¼ retardation plate, comprises a reflective polarizer film disposed between the linear polarizer and the ¼ retardation plate and transmitting a polarized light horizontal to the transmission axis of the linear polarizer while reflecting a polarized light vertical to the transmission axis of the linear polarizer. The polarizer may be useful to highly improve the brightness of the OLED device when the polarizer is used in the OLED device. | 2013-04-25 |
| 20130099220 | Transistor Structure - A transistor structure comprises a patterned N-type transparent oxide semiconductor formed over a substrate as a base, and a patterned p-type organic polymer semiconductor formed on the patterned N-type transparent oxide semiconductor comprising a first portion and a second portion so that the patterned N-type transparent oxide semiconductor and the first portion and the second portion of the patterned p-type organic polymer semiconductor form heterojunctions therebetween respectively, wherein the first portion of the patterned p-type organic polymer semiconductor is used as an emitter, and the second portion of the patterned p-type organic polymer semiconductor is used as a collector. | 2013-04-25 |
| 20130099221 | ORGANIC EL DISPLAY PANEL, AND METHOD FOR PRODUCING SAME - An organic EL display panel includes a substrate; an interlayer insulating layer on the substrate; first electrodes on the interlayer insulating layer to correspond to element formation regions in rows and columns; banks extending in columns to partition the regions in rows; organic light-emitting layers above the first electrodes, and each containing organic light-emitting material having light-emitting color differing between each two adjacent regions in rows; and second electrodes above the light-emitting layers, and being opposite in polarity to the first electrodes, wherein the interlayer insulating layer has first opening corresponding to interval between each two adjacent first electrodes in rows, the banks each have integrally formed buried part and main part, the buried part fills the interval and the first opening, and the main part is protrusion of the buried part and has recess on top thereof along with shapes of the interval and the first opening. | 2013-04-25 |
| 20130099222 | DISPLAY, METHOD FOR DRIVING DISPLAY, AND ELECTRONIC APPARATUS - Disclosed herein is a display including: a pixel array part configured to include pixels that are arranged in a matrix and each have an electro-optical element, a write transistor for writing a video signal, a drive transistor for driving the electro-optical element based on the video signal written by the write transistor, and a holding capacitor connected between gate and source of the drive transistor, wherein the holding capacitor includes a first electrode, a second electrode disposed to face one surface of the first electrode for forming a first capacitor, and a third electrode disposed to face the other surface of the first electrode for forming a second capacitor, and the first capacitor and the second capacitor are connected in parallel to each other electrically. | 2013-04-25 |
| 20130099223 | ANTHANTHRENE BASED COMPOUND AND SEMICONDUCTOR DEVICE - An anthanthrene based compound of the structural formula (1) is disclosed: | 2013-04-25 |
| 20130099224 | LIGHT-EMITTING DEVICE AND PHOTOVOLTAIC CELL, AND METHOD FOR MANUFACTURING THE SAME - Provided are a light-emitting device and a photovoltaic cell having excellent characteristics. A light-emitting device ( | 2013-04-25 |
| 20130099225 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLID-STATE IMAGING DEVICE - Provided is a photoelectric conversion element including a photoelectric conversion material layer that is constituted by an organic material having more excellent sensitivity and responsiveness than those of conventional ones. | 2013-04-25 |
| 20130099226 | PHOTOELECTRIC CONVERSION DEVICE - It is aimed to provide a photoelectric conversion device having high adhesion between a first semiconductor layer and an electrode layer as well as high photoelectric conversion efficiency. A photoelectric conversion device comprises an electrode layer, a first semiconductor layer located on the electrode layer and comprising a chalcopyrite-based compound semiconductor of group I-III-VI and oxygen, and a second semiconductor layer located on the first semiconductor layer and forming a pn junction with the first semiconductor layer. In the photoelectric conversion device, the first semiconductor layer has a higher molar concentration of oxygen in a part located on the electrode layer side with respect to a center portion in a lamination direction of the first semiconductor layer than a molar concentration of oxygen in the whole of the first semiconductor layer. | 2013-04-25 |
| 20130099227 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor capable of achieving a thin film transistor with excellent electric property, a thin film transistor having a channel layer formed of the oxide semiconductor, and a display device equipped with the thin film transistor. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, and includes Al, In, Zn, and O as constituent atoms. | 2013-04-25 |
| 20130099228 | SOLUTION COMPOSITION FOR PASSIVATION LAYER, THIN FILM TRANSISTOR ARRAY PANEL, AND MANUFACTURING METHOD FOR THIN FILM TRANSISTOR ARRAY PANEL - A passivation layer solution composition is provided. A passivation layer solution composition according to an exemplary embodiment of the present invention includes an organic siloxane resin represented by Chemical Formula 1 below. | 2013-04-25 |
| 20130099229 | Semiconductor Device, RFID Tag Using the Same and Display Device - Disclosed is an oxide semiconductor layer ( | 2013-04-25 |
| 20130099230 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - When a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are stacked and a source and drain electrode layers are provided in contact with the oxide semiconductor film is manufactured, after the formation of the gate electrode layer or the source and drain electrode layers by an etching step, a step of removing a residue remaining by the etching step and existing on a surface of the gate electrode layer or a surface of the oxide semiconductor film and in the vicinity of the surface is performed. The surface density of the residue on the surface of the oxide semiconductor film or the gate electrode layer can be 1×10 | 2013-04-25 |
| 20130099231 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. In a semiconductor device including a bottom-gate transistor in which an insulating layer functioning as a channel protective film is provided over an oxide semiconductor film, elements contained in an etching gas can be prevented from remaining as impurities on a surface of the oxide semiconductor film by performing impurity-removing process after formation of an insulating layer provided over and in contact with the oxide semiconductor film and/or formation of source and drain electrode layers. The impurity concentration in the surface of the oxide semiconductor film is lower than or equal to 5×10 | 2013-04-25 |
| 20130099232 | SEMICONDUCTOR DEVICE - To provide a highly reliable semiconductor device which includes a transistor including an oxide semiconductor, in a semiconductor device including a staggered transistor having a bottom-gate structure provided over a glass substrate, a gate insulating film in which a first gate insulating film and a second gate insulating film, whose compositions are different from each other, are stacked in this order is provided over a gate electrode layer. Alternatively, in a staggered transistor having a bottom-gate structure, a protective insulating film is provided between a glass substrate and a gate electrode layer. A metal element contained in the glass substrate has a concentration lower than or equal to 5×10 | 2013-04-25 |
| 20130099233 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a high yield to achieve high productivity. In the manufacture of a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are sequentially stacked and a source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor film, the source electrode layer and the drain electrode layer are formed through an etching step and then a step for removing impurities which are generated by the etching step and exist on a surface of the oxide semiconductor film and in the vicinity thereof is performed. | 2013-04-25 |
| 20130099234 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Objects are to provide a semiconductor device for high power application in which a novel semiconductor material having high productivity is used and to provide a semiconductor device having a novel structure in which a novel semiconductor material is used. The present invention is a vertical transistor and a vertical diode each of which has a stacked body of an oxide semiconductor in which a first oxide semiconductor film having crystallinity and a second oxide semiconductor film having crystallinity are stacked. An impurity serving as an electron donor (donor) which is contained in the stacked body of an oxide semiconductor is removed in a step of crystal growth; therefore, the stacked body of an oxide semiconductor is highly purified and is an intrinsic semiconductor or a substantially intrinsic semiconductor whose carrier density is low. The stacked body of an oxide semiconductor has a wider band gap than a silicon semiconductor. | 2013-04-25 |
| 20130099235 | SEMICONDUCTOR WAFER AND METHOD FOR MANUFACTURING STACK PACKAGE USING THE SAME - A semiconductor wafer includes a plurality of semiconductor chips having bonding pads; and a connection wiring line coupling the plurality of semiconductor chips such that a test signal, which is inputted through bonding pads of an arbitrary semiconductor chip among the plurality of semiconductor chips, is transmitted to bonding pads of other semiconductor chips among the plurality of semiconductor chips. | 2013-04-25 |
| 20130099236 | MODIFICATION OF SILICON LAYERS FORMED FROM SILANE-CONTAINING FORMULATIONS - The invention relates to a process for producing an oxygen-containing surface or interface of a silicon layer, which is arranged on a substrate, especially in the production of photovoltaic units. | 2013-04-25 |
| 20130099237 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - Hydrogen concentration and oxygen vacancies in an oxide semiconductor film are reduced. Reliability of a semiconductor device which includes a transistor using an oxide semiconductor film is improved. One embodiment of the present invention is a semiconductor device which includes a base insulating film; an oxide semiconductor film formed over the base insulating film; a gate insulating film formed over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film provided therebetween. The base insulating film shows a signal at a g value of 2.01 by electron spin resonance. The oxide semiconductor film does not show a signal at a g value of 1.93 by electron spin resonance. | 2013-04-25 |
| 20130099238 | LIQUID CRYSTAL DISPLAY HAVING A HIGH APERTURE RATIO - A (liquid crystal display) LCD includes a pixel array and a gate driving circuit. The pixel array includes a plurality of first oxide thin film transistors, a first oxide thin film transistor of the first oxide thin film transistors with a shortest channel length having a first channel length. The gate driving circuit is coupled to the pixel array for driving the pixel array, and includes a plurality of second oxide thin film transistors. The second oxide thin film of the second oxide thin film transistors with a longest channel length has a second channel length. A ratio of the second channel length and the first channel length is greater than 1.5. By limiting the ratio of the second channel length and the first channel length, the aperture ratio of the display panel can be improved without deteriorating the operation stability of the LCD. | 2013-04-25 |
| 20130099239 | DISPLAY DEVICE - The invention prevents disconnection of data lines that traverse two-layered gate lines via an insulating film. | 2013-04-25 |
| 20130099240 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR PANEL, AND METHOD FOR MANUFACTURING THE SAME - A Thin Film Transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate a first source electrode and a first drain electrode spaced apart from each other on the semiconductor layer, a channel area disposed in the semiconductor layer between the first source electrode and the first drain electrode, an etching prevention layer disposed on the channel area, the first source electrode, and the first drain electrode and a second source electrode in contact with the first source electrode, and a second drain electrode in contact with the first drain electrode. | 2013-04-25 |
| 20130099241 | ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An array substrate includes first and second lines on a substrate and formed of a metallic material; a gate electrode connected to the first line; a gate insulating layer on the first and second lines and the gate electrode and including a groove exposing the substrate and positioned between the first and second lines; a semiconductor layer on the gate insulating layer and corresponding to the gate electrode; a data line crossing the first and second lines and on the gate insulating layer; a source electrode connected to the data line; a drain electrode spaced apart from the source electrode; a passivation layer on the data line, the source electrode and the drain electrode and including an opening, the opening exposing the gate insulating layer and the drain electrode; and a pixel electrode positioned on the gate insulating layer and in the opening and contacting the drain electrode. | 2013-04-25 |
| 20130099242 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate having a low resistance signal line and a method of manufacturing the display substrate are provided. The display substrate includes an insulation substrate, a gate line, a data line and a pixel electrode. The gate line gate line is formed through a sub-trench and an opening portion. The sub-trench is formed in the insulation substrate and the opening portion is formed through a planarization layer on the insulation substrate at a position corresponding to the position of the sub-trench. The data line crosses the gate line. The pixel electrode is electrically connected to the gate line and the data line through a switching element. Thus, a signal line is formed through a trench formed by using a planarization layer and an insulation substrate, so that a resistance of the signal line may be reduced. | 2013-04-25 |
| 20130099243 | SUBSTRATE BREAKDOWN VOLTAGE IMPROVEMENT FOR GROUP III-NITRIDE ON A SILICON SUBSTRATE - A circuit structure includes a substrate, a nucleation layer of undoped aluminum nitride, a graded buffer layer comprising aluminum, gallium, nitrogen, one of silicon and oxygen, and a p-type conductivity dopant, a ungraded buffer layer comprising gallium, nitrogen, one of silicon and oxygen, and a p-type conductivity dopant without aluminum, and a bulk layer of undoped gallium nitride over the ungraded buffer layer. The various dopants in the graded buffer layer and the ungraded buffer layer increases resistivity and results in layers having an intrinsically balanced conductivity. | 2013-04-25 |
| 20130099244 | METHOD OF GROWING SEMICONDUCTOR HETEROSTRUCTURES BASED ON GALLIUM NITRIDE - The method of growing non-polar epitaxial heterostructures for light-emitting diodes producing white emission and lasers, on the basis of compounds and alloys in AlGaInN system, comprising the step of vapor-phase deposition of one or multiple heterostructures layers described by the formula Al | 2013-04-25 |
| 20130099245 | FIELD EFFECT TRANSISTOR, METHOD FOR PRODUCING THE SAME, AND ELECTRONIC DEVICE - The present invention provides a field effect transistor which can achieve both of a high threshold voltage and a low on-state resistance, a method for producing the same, and an electronic device. In the field effect transistor, each of a buffer layer | 2013-04-25 |
| 20130099246 | SUBSTRATE FOR EPITAXIAL GROWTH - A surface of the substrate consists in plurality of neighbouring stripe shaped flat surfaces of a width from 1 to 2000 μm. Longer edges of the flat surfaces are parallel one to another and planes of these surfaces are disoriented relatively to the crystallographic plane of gallium nitride crystal defined by Miller-Bravais indices (0001), (11-22) or (11-20). Disorientation angle of each of the flat surfaces is between 0 and 3 degree and is different for each pair of neighbouring flat surfaces. Substrate according to the invention allows epitaxial growth of a layered AlInGaN structure by MOCVD or MBE method which permits for realization of a non-absorbing mirrors laser diode emitting a light of the wavelength from 380 to 550 nm and a laser diodes array which may emit simultaneously light of various wavelengths in the range of 380 to 550 nm. | 2013-04-25 |
| 20130099247 | SEMICONDUCTOR DEVICES HAVING A RECESSED ELECTRODE STRUCTURE - An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance. | 2013-04-25 |
| 20130099248 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a nitride semiconductor light emitting device including an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer disposed on the active layer. One or more current diffusion layers are disposed on a surface of the n-type nitride semiconductor layer. The current diffusion layer(s) includes a material having greater band gap energy than that of a material forming the n-type nitride semiconductor layer so as to form a two-dimensional electron gas layer at an interface with the material forming the n-type nitride semiconductor layer. | 2013-04-25 |
| 20130099249 | NITRIDE UV LIGHT SENSORS ON SILICON SUBSTRATES - An ultraviolet light sensor and method of manufacturing thereof are disclosed. The ultraviolet light sensor includes Group-III Nitride layers adjacent to a silicon wafer with one of the layers at least partially exposed such that a surface thereof can receive UV light to be detected. The Group-III Nitride layers include a p-type layer and an n-type layer, with p/n junctions therebetween forming at least one diode. Conductive contacts are arranged to conduct electrical current through the sensor as a function of ultraviolet light received at the outer Group-III Nitride layer. The Group-III Nitride layers may be formed from, e.g., GaN, InGaN, AlGaN, or InAlN. The sensor may include a buffer layer between one of the Group-III Nitride layers and the silicon wafer. By utilizing silicon as the substrate on which the UV sensor diode is formed, a UV sensor can be produced that is small, efficient, cost-effective, and compatible with other semiconductor circuits and processes. The sensor may be configured to be sensitive to a specific subtype or subband of ultraviolet radiation to be detected by selecting a specific composition of said Group-III Nitride layers. | 2013-04-25 |
| 20130099250 | STRUCTURE OF SEMICONDUCTOR CHIPS WITH ENHANCED DIE STRENGTH AND A FABRICATION METHOD THEREOF - An improved structure of semiconductor chips with enhanced die strength and a fabrication method thereof are disclosed. The improved structure comprises a substrate, an active layer, and a backside metal layer, in which the active layer is formed on the front side of the substrate and includes at least one integrated circuit; the backside metal layer is formed on the backside of the substrate, which fully covers the area corresponding to the area covered by the integrated circuits in the active layer. By using the specific dicing process of the present invention, the backside metal layer and the substrate can be diced tidily. Die cracking on the border between the substrate and the backside metal layer of the diced single chip can be prevented, and thereby the die strength can be significantly enhanced. | 2013-04-25 |
| 20130099251 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - When viewed in a plan view, a termination region (TM) surrounds an element region (CL). A first side of a silicon carbide substrate (SB) is thermally etched to form a side wall (ST) and a bottom surface (BT) in the silicon carbide substrate (SB) at the termination region (TM). The side wall (ST) has a plane orientation of one of {0-33-8} and {0-11-4}. The bottom surface (BT) has a plane orientation of {000-1}. On the side wall (ST) and the bottom surface (BT), an insulating film ( | 2013-04-25 |
| 20130099252 | METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE - A method of manufacturing a silicon carbide substrate includes the steps of preparing an ingot composed of single crystal silicon carbide, obtaining a silicon carbide substrate by slicing the ingot, and polishing a surface of the silicon carbide substrate. In the step of obtaining a silicon carbide substrate, the ingot is sliced such that cutting proceeds in a direction in which an angle formed with respect to a <11-20> direction or a <1-100> direction is 15±5° in an orthogonal projection on a {0001} plane. In the step of polishing a surface of the silicon carbide substrate, at least one of main surfaces of the silicon carbide substrate is polished while the entire surface of at least one of the main surfaces of the silicon carbide substrate is in contact with a polishing surface. | 2013-04-25 |
| 20130099253 | EPITAXIAL WAFER AND SEMICONDUCTOR DEVICE - A semiconductor device that can suppress deterioration in crystal quality caused by a lattice mismatch between a substrate and an epitaxial layer and that also can ensure a voltage sustaining performance, and a wafer for forming the semiconductor device. An epitaxial wafer of silicon carbide (SiC), which is used for manufacturing a semiconductor device, includes a low resistance substrate and an epitaxial layer provided thereon. The epitaxial layer is doped with the same dopant as a dopant doped into the substrate, and has a laminated structure including a low concentration layer and an ultrathin high concentration layer. A doping concentration in the low concentration layer is lower than that in the silicon carbide substrate. A doping concentration in the ultrathin high concentration layer is equal to that in the silicon carbide substrate. | 2013-04-25 |
| 20130099254 | LIGHT EMITTING DIODE WITH CHAMFERED TOP PERIPHERAL EDGE - A light emitting diode includes a substrate and a light emitting structure. The light emitting structure includes a light outputting surface away from the substrate and a plurality of sidewalls adjoining the light outputting surface. A top peripheral edge interconnecting the light outputting surface and the sidewalls of the light emitting structure is a rounded top peripheral edge or a beveled top peripheral edge. A top surface of the substrate surrounding the light emitting structure is exposed to air and formed with micro-structures. | 2013-04-25 |
| 20130099255 | SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING ZINC OXIDE-BASED TRANSPARENT CONDUCTIVE THIN FILM, AND FABRICATION METHOD THEREOF - There is provided a semiconductor light emitting device having a zinc oxide-based transparent conductive thin film in which a Group III element is doped to have waveforms having a plurality of periods in a thickness direction. | 2013-04-25 |
| 20130099256 | MULTI-CHIP PACKAGE CROSS-REFERENCE TO RELATED APPLICATIONS - A multi-chip package includes a lower substrate; at least two semiconductor chips stacked over the lower substrate and each defined with a via hole; an upper substrate coupled to a semiconductor chip positioned uppermost among the semiconductor chips; a light emitting part coupled to the lower substrate corresponding to the via hole; an electrowetting liquid lens coupled to a lower surface of the upper substrate for receiving a signal transferred from the light emitting part through the via hole; a light receiving part coupled to a sidewall of the via hole of each semiconductor chip configured to receive a signal from the electrowetting liquid lens. | 2013-04-25 |
| 20130099257 | LED PACKAGE WITH EFFICIENT ILLUMINATION - An LED package with efficient illumination includes a base, a plurality of LED chips, an enclosure and an optically transparent plate. The LED chips are placed on the base and are electrically connecting to the base. The enclosure is located on the surface of the base. The LED chips are enclosed by the enclosure. A plurality of grooves is uniformly formed on the surface of the optically transparent plate. A volume of silicone mixed with phosphor powder is injected into each of the grooves. Thus, when packaging the plurality of LED chips, it will reduce the usage amount of the phosphor powder of the optically transparent plate. | 2013-04-25 |
| 20130099258 | Organic Light Emitting Diode Display - An organic light emitting diode (OLED) display according to an exemplary embodiment of the invention includes: a display substrate including a plurality of pixel areas; a tilt layer formed on the display substrate of each of the plurality of pixel areas, and having a tilt angle with respect to the display substrate; a first electrode formed on the tilt layer; an organic emission layer formed on the first electrode; a second electrode formed on the organic emission layer; an encapsulation substrate disposed on the second electrode and in parallel with the display substrate; and a prism sheet formed on the encapsulation substrate and having a plurality of prisms. | 2013-04-25 |
