17th week of 2009 patent applcation highlights part 42 |
Patent application number | Title | Published |
20090104661 | Human Coagulation Factor VII Polypeptides - The present invention relates to novel human coagulation Factor VIIa variants having coagulant activity as well as polynucleotide constructs encoding such variants, vectors and host cells comprising and expressing the polynucleotide, pharmaceutical compositions, uses and methods of treatment. | 2009-04-23 |
20090104662 | Use of interleukin-4 antagonists and compositions thereof - Methods for treating medical conditions induced by interleukin-4 involve administering an IL-4 antagonist to a patient afflicted with such a condition. Suitable IL-4 antagonists include, but are not limited to, IL-4 receptors (such as a soluble human IL-4 receptor), antibodies that bind IL-4, antibodies that bind IL-4R, IL-4 muteins that bind to IL-4R but do not induce a biological response, molecules that inhibit IL-4-induced signal transduction, and other compounds that inhibit a biological effect that results from the binding of IL-4 to a cell surface IL-4R. Particular antibodies provided herein include human monoclonal antibodies generated by procedures involving immunization of transgenic mice. Such human antibodies may be raised against human IL-4 receptor. Certain of the antibodies inhibit both IL-4-induced and IL-13-induced biological activities. | 2009-04-23 |
20090104663 | Novel Hydrophobin Fusion Products, Production and Use Thereof - Polypeptides of the general structural formula (I) | 2009-04-23 |
20090104664 | Use of Molecular chaperones for the enhanced production of secreted, recombinant proteins in mammalian cells - The present invention relates to a method for increased production of a secreted, recombinant protein product through the introduction of molecular chaperones in a mammalian host cell. The present invention also relates to a mammalian host cell with enhanced expression of a secreted recombinant protein product by coexpressing at least one chaperone protein. | 2009-04-23 |
20090104665 | PURINE-DERIVED SUBSTANCE-PRODUCING BACTERIUM AND A METHOD FOR PRODUCING A PURINE-DERIVED SUBSTANCE - A purine-derived substance is produced by culturing a bacterium belonging to the genus | 2009-04-23 |
20090104666 | Hybrid Glycosylated Products and Their Production and Use - The present invention relates to hybrid glycosylated products, and in particular, to natural products such as polyketides and glycopeptides, and to processes for their preparation. The invention is particularly concerned with recombinant cells in which a cloned microbial glycosyltransferase can be conveniently screened for its ability to generate specific glycosylated derivatives when supplied with polyketide, peptide, or polyketide-peptides as substrates. The invention demonstrates that cloned glycosyltransferases when rapidly screened for their ability to attach a range of activated sugars to a range of exogenously supplied or endogenously generated aglycone templates, show a surprising flexibility towards both aglycone and sugar substrates, and that this process allows the production of glycosylated polyketides in good yield. This overcomes the problem not only of supplying novel sugar attachments to individual polyketides, including polyketides altered by genetic engineering, but also of increasing the diversity of polyketide libraries by combinatorial attachment of sugars. | 2009-04-23 |
20090104667 | L-AMINO ACID-PRODUCING MICROORGANISM AND A METHOD FOR PRODUCING AN L-AMINO ACID - An L-amino acid is produced by culturing a microorganism which belongs to the family Enterobacteriaceae and is able to produce an L-amino acid, wherein the bacterium has been modified to enhance orotate phosphoribosyltransferase activity is enhanced, in a medium to produce and cause accumulation of an L-amino acid in the medium or cells, and collecting the L-amino acid from the medium or the cells. | 2009-04-23 |
20090104668 | Method for Producing Biopterins Using Tetrahydrobiopterin Biosynthesis Enzyme - Biopterins are useful compounds utilized in pharmaceutical agents or functional foods. The presence of sepiapterin reductase (SPR) involved in the biosynthesis of biopterins has not been confirmed so far in microorganisms except for a few microorganisms such as blue-green algae. For efficiently producing biopterins using microorganisms, it has been demanded to obtain and use SPR genes derived from microorganisms. The present inventors have found that when | 2009-04-23 |
20090104669 | Method for Preparing (S)-3-Hydroxy-Gamma-Butyrolactone Using Hydrolase - The present invention relates to a method for preparing S-HGB ((S)-3-hydroxy-γ-butyrolactone) using hydrolase, and more particularly to a method for preparing S-HGB in a high purity by hydrolyzing S-BBL ((S)-β-benzoyloxy-γ-butyrolactone) in the presence of hydrolase. According to the present invention, the S-HGB having an optical purity can be obtained in a high yield under simple process conditions without requiring reaction conditions of high pressure and high temperature or complex operating conditions by hydrolyzing S-BBL with hydrolase. | 2009-04-23 |
20090104670 | N-carbobenzyloxy (N-CBZ)-deprotecting enzyme and uses therefor - This invention relates to isolated or recombinant N-carbobenzyloxy-deprotecting enzyme polypeptides that catalyze the removal of carbobenzyloxy from carbobenzyloxy-protected amino acids and alcohols. Also related are isolated nucleic acids encoding N-carbobenzyloxy-deprotecting enzyme polypeptides thereof, as well as vectors and host cells comprising these nucleic acids. The invention also relates to methods of obtaining isolated nucleic acids, polypeptides, and antibodies, and methods of using the polypeptides in various reactions for industrial or pharmaceutical applications. | 2009-04-23 |
20090104671 | METHOD FOR PRODUCING OPTICALLY ACTIVE 2-(N-SUBSTITUTED AMINOMETHYL)-3-HYDROXYBUTYRIC ACID ESTER - The present invention relates to a method for producing optically active 2-(N-substituted aminomethyl)-3-hydroxybutyric acid esters wherein a 2-(N-substituted aminomethyl)-3-oxobutyric acid ester is treated with an enzyme source capable of stereoselectively reducing said ester to the corresponding optically active 2-(N-substituted aminomethyl)-3-hydroxybutyric acid ester having the (2S,3R) configuration. The present invention provides an efficient method for industrially producing optically active 2-(N-substituted aminomethyl)-3-hydroxybutyric acid esters, in particular such compounds having the (2S,3R) configuration, which are useful as intermediates for the production of medicinal compounds, among others. | 2009-04-23 |
20090104672 | Novel Microbe, Lipid Modifying Agent, Process for Producing 2-Acyl-Lysophospholipid, Process for Producing Diacylglycerol, Process for Producing Ceramide, and Method of Degumming Oil or Fat - The present invention provides a new supply source of enzymes useful for modification of phospholipids for example, and also provides a method for producing 2-acyl lysophospholipid, a method for producing monoacylglycerol, and a method for producing ceramide, as well as a new method for degumming fat and oil. | 2009-04-23 |
20090104673 | Process for Producing Triglycerides - A process for producing triglycerides comprises: (a) subjecting a first triglyceride comprising at least 40% by moles of oleic acid residues, based on total acyl groups in the triglyceride, to a reaction with stearic acid, at least one ester of stearic acid or a mixture thereof, to obtain a composition comprising 1,3-distearoyl 2-oleoyl glyceride and trioleoyl glyceride; (b) treating the composition to form a first fraction having an increased amount by weight of oleoyl groups compared to said composition and a second fraction having an increased amount by weight of stearoyl groups compared to said composition; (c) hydrolysing the first fraction to form oleic acid; and (d) reacting said oleic acid or an ester thereof with a triglyceride comprising at least 50% by moles of palmitic acid residues, based on total acyl groups, to form a composition comprising 1,3-dioleoyl 2-palmitoyl glyceride. | 2009-04-23 |
20090104674 | Diacylglycerol Acyltransferases for Alteration of Polyunsaturated Fatty Acids and Oil Content in Oleaginous Organisms - Acyltransferases are provided, suitable for use in the manufacture of microbial oils enriched in omega fatty acids in oleaginous yeast (e.g., | 2009-04-23 |
20090104675 | METHOD FOR PRODUCING LACTIC ACID - Lactic acid with high optical purity that has not previously been achieved is produced. | 2009-04-23 |
20090104676 | PROCESS TO SEQUENCE BIOREACTOR MODULES FOR SERIAL GAS FLOW AND UNIFORM GAS VELOCITY - This invention is a process for managing the gas flow through a plurality of bioconversion modules that provide a gas liquid interface. The conversion modules provide the gas liquid interface across an activated surface that converts at least some of the gas components into desired liquid products. Arrangement of the modules and control of gas flow in accordance with this invention enhances the utilization of the gas and the production of desired liquid products by adjusting the flow area to compensate for changes in the volume of the feed gas. Improved control of the gas velocity through the bioconversion modules eliminates problems of liquid condensation and flow maldistribution. The process may sequence the modules to mitigate time variation in microorganism activity and incorporate additional periodic process steps. | 2009-04-23 |
20090104677 | Heteroaromatic Selective Inhibitors of Neuronal Nitric Oxide Synthase - Compounds inhibiting neuronal nitric oxide synthase (nNOS) for potential treatment in neurodegenerative diseases, such as stroke, Alzheimer's disease, Parkinson's disease, Huntington's disease, such compounds of a formula. | 2009-04-23 |
20090104678 | METHOD OF PRODUCING POLYSACCHARIDE DERIVATIVES - A polysaccharide derivative having a high solubility in an aqueous solvent is produced. The production method of the present invention uses a compound shown by the general formula (1) as a condensing agent and allows a polysaccharide having a carboxyl group to react with an an organic compound having a functional group capable of condensing with the carboxyl group to prepare the polysaccharide derivative: | 2009-04-23 |
20090104679 | Crystallographic Structure of MNK-1 and MNK-2 Proteins - The present invention relates to crystalline Mnk-1 and Mnk-2 kinases and, in particular, to the crystal structure of Mnk-1 and Mnk-2 kinase domain. | 2009-04-23 |
20090104680 | Lipase powder, methods for producing the same and use thereof - A lipase powder which is a granulated substance containing a lipase and a solid content of animal milk, a lipase composition wherein said lipase powder is immersed or impregnated in fatty oil, and a method for producing the lipase powder which comprises the step of adding animal milk or cream derived from the animal milk to an aqueous solution containing a lipase, and the step of spray-drying, freeze-drying or solvent-precipitating the mixture thereof are provided. According to the present invention, a lipase powder of which lipase activity and stability are improved can be provided. | 2009-04-23 |
20090104681 | Polypeptides Having Alpha-Amylase and Granular Starch Hydrolyzing Activity - The present invention relates to a polypeptide having alpha-amylase activity obtained from a strain of | 2009-04-23 |
20090104682 | Construction of novel strains containing minimizing genome by tn5-coupled cre/loxp excision system - Disclosed is a method for developing novel strains deleted specific chromosome sites, using transposon and Cre/loxP site-specific recombination by Cre expression vector, wherein the transposon comprises a selectable marker and loxP site. The method comprises the steps of: (1) preparing a transposon comprising a selectable marker and loxP site; (2) inserting the transposon into an optional position of microbial chromosome, and determining the inserted site; (3) integrating two transposons comprising a different selectable marker to one chromosome; (4) deleting a chromosomal site between the two lox sites by introducing a Cre expression vector into the chromosome of step (3); and (5) repeating steps (3 and 4) for the mutant deleted a part of chromosome, to shorten the chromosome of mutant gradually. | 2009-04-23 |
20090104683 | L-TYROSINE-PRODUCING BACTERIUM AND A METHOD FOR PRODUCING L-TYROSINE - The present invention describes the production of L-tyrosine by culturing in a medium an | 2009-04-23 |
20090104684 | Diagnosis of carcinomas - The invention is directed to compositions and methods for the detection of a malignant condition, and relates to the discovery of soluble and cell surface forms of HE4a polypeptides, including HE4a that is overexpressed in ovarian carcinomas. In particular the invention provides a nucleic acid sequence encoding HE4a, and also provides a method of screening for the presence of a malignant condition in a subject by detecting reactivity of an antibody specific for a HE4a polypeptide with a molecule naturally occurring in soluble and/or cell surface form in a sample from such a subject, and by hybridization screening using an HE4a nucleotide sequence, as well as other related advantages. | 2009-04-23 |
20090104685 | REDUCING INSOLUBLE DEPOSIT FORMATION IN ETHANOL PRODUCTION - The present inventors have surprisingly discovered that phytic acid tenaciously precipitates with soluble metals in food or fuel ethanol-processing fluid, producing insoluble organometallic salt deposit or scale on the processing equipment that must be removed in order to facilitate further ethanol processing. The present invention relates to converting phytic acid salts or phytates to inorganic phosphates to improve metal solubility and reduce deposition within processing equipment. | 2009-04-23 |
20090104686 | Apparatus for Thin-Layer Cell Smear Preparation and In-situ Hybridization - The present invention discloses an apparatus for thin-layer cell smear preparation and in-situ hybridization, comprising at least one positioning device and a sealing device. The positioning device comprises at least one first opening. When the positioning device is set on a carrier device, the wall of the first opening and the carrier device form a cavity. The cavity is used to accommodate a cell suspension. The sealing device is provided on the positioning device for sealing the cavity to form an enclosed space. | 2009-04-23 |
20090104687 | Microbiological analysis system - The microbiological analysis system comprises a support ( | 2009-04-23 |
20090104688 | Microbiological analysis machine - The machine for microbiological analysis of a support comprises an enclosure ( | 2009-04-23 |
20090104689 | Microchip For Use In Cytometry, Velocimetry And Cell Sorting Using Polyelectrolytic Salt Bridges - The present invention relates to a microchip using polyelectrolyte salt bridge for cytometry, velocimetry, and cell sorting. The microchip comprises; a) an inlet for solution to be analyzed, b) a microchannel which provides a moving passage for solution to be analyzed, c) at least one outlet for solution to be analyzed which has passed through the moving passage, d) at least one electrode system comprising a first and a second salt bridges connected to the microchannel (the two salt bridges face each other), and a first and a second reservoirs connected to said each salt bridge (the reservoir comprises electrode and standard electrolyte solution). The microchip detects analytes in the solution to be analyzed (for example, a cell) by detecting change of impedance. In detail, anion in the standard electrolyte solution, which is comprised in the first reservoir, moves from the first salt bridge to the second salt bridge across the microchannel. Impedance change occurs by interference of anion moving across the microchannel and the change can be detected by impedance analyzer connected to electrodes in the first and the second reservoirs. | 2009-04-23 |
20090104690 | DEVICE FOR DETECTING AN ENZYME IN A SAMPLE - A device for detecting a mammalian host-derived enzyme in a sample of a wound fluid, said device comprising: a housing having an inlet for the sample and side walls defining a fluid flow path extending from said inlet an indicator moiety that is bound to a solid substrate by means of a peptide linker moiety that is cleavable by said host-derived enzyme, said solid substrate being located in a reaction zone of said fluid flow path; and a detector moiety located in a detection zone downstream from the reaction zone in said fluid flow path, wherein the detector moiety interacts with an indicator moiety that has been cleaved from said solid substrate to produce a detectable change in said detection zone. Suitably, the device further comprises a control moiety located in a control zone in said device, wherein the control moiety can interact with a component of the wound fluid sample to improve the accuracy of the device. Also provided are systems comprising a device of the invention and a swab or biopsy punch adapted for use therewith. | 2009-04-23 |
20090104691 | NOVEL RECOMBINANT ADENOVIRUS VECTOR HAVING A REDUCED SIDE EFFECT - The present invention provides a novel adenovirus vector for which inflammation during the in vivo administration thereof is alleviated by inhibiting the induction of expression of an adenovirus gene by a foreign promoter inserted into the adenovirus genome, and a method for producing the vector, a cell line for use in the production of the recombinant adenovirus vector, or a gene therapy method using the recombinant adenovirus vector. | 2009-04-23 |
20090104692 | Tissue Container for Molecular and Histology Diagnostics Incorporating a Breakable Membrane - A container for storing a biological sample for molecular diagnostic testing and/or histological testing is provided. The container includes a first chamber for receiving a sample holder therein, a second chamber, and a closure for enclosing the container. A breakable membrane, such as a piercable foil, extends within the container and separates the two chambers. When the breakable membrane is broken, fluid can pass between the first and second chambers. The membrane may be broken through an activator on the closure, such as a depressible member or a rotatable carrier, causing the sample holder to break through the membrane. | 2009-04-23 |
20090104693 | UDP-GALACTOSE:BETA-DGALACTOSE-R4-ALPHA-D-GALACTOSYLTRANSFERASE, ALPHA4GAL-T1 - A novel gene defining a novel enzyme UDP-galactose: β-D-galactose-R 4-α-D-galactosyltransferase, termed α4Gal-T1, with unique enzymatic properties is disclosed. The invention provides isolated DNA molecules and DNA constructs encoding α4Gal-T1 and derivatives thereof by way of amino acid deletion, substitution or insertion exhibiting α4Gal-T1 activity, as well as cloning and expression vectors including such DNA, host cells comprising DNA encoding α4Gal-T1, and recombinant methods for providing α4Gal-T1. The enzyme α4Gal-T1 and α4Gal-active derivatives thereof are disclosed. Further, the invention discloses methods of obtaining α1, 4galactosyl glycosylated glycosphingolipids by use of an enzymatically active α4Gal-T1 protein thereof or by using cells stably transfected with a vector including DNA encoding an enzymatically active α4Gal-T1 protein as an expression system for recombinant production of such glycosphingolipids. Also a method for the identification of DNA sequence variations in the α4Gal-T1-coding exon by PCR, and detecting the presence of DNA sequence variation, are disclosed. | 2009-04-23 |
20090104694 | ISOLATION AND TRANSPLANTATION OF RETINAL STEM CELLS - The present invention relates to the isolation, in vitro propagation, and transplantation and integration of non-pigmented retinal stem cells derived from the neuroretina of the eye, ex vivo and in vivo. | 2009-04-23 |
20090104695 | Stem Cells Culture Systems - The present invention concerns systems and methods for providing human cell cultures. Specific embodiments of the invention relate to cultures of feeder cells for use in stem cell technology, as well as cultures, culture systems and methods for maintenance and propagating of stem cells in an undifferentiated state as well as for the development of somatic cells cultures from stem cells, the somatic cell cultures being free of extraembryonic cells. | 2009-04-23 |
20090104696 | Methods and Compositions for Feeder-Free Pluripotent Stem Cell Media Containing Human Serum - The present invention provides compositions and methods for the culture and maintenance of pluripotent stem cells. More particularly, the present invention provides for compositions and methods for culturing, maintaining, growing and stabilizing primate pluripotent stem cells in a feeder-free defined media further comprising human serum, or a soluble attachment component of the human serum, for promoting cell attachment. | 2009-04-23 |
20090104697 | Method of differentiation of morula or inner cell mass cells and method of making lineage-defective embryonic stem cells - An improved method of producing differentiated progenitor cells comprising obtaining inner cell mass cells from a blastocyst and inducing differentiation of the inner cell mass cells to produce differentiated progenitor cells. The differentiated progenitor cells may be transfected such that there is an addition, deletion or alteration of a desired gene. The differentiated progenitor cells are useful in cell therapy and as a I source of cells for the production of tissues and organs for transplantation. Also provided is a method of producing a lineage-defective human embryonic stem cell. | 2009-04-23 |
20090104698 | Bioreactor System And Method For The Production And Collection Of Blood Cells From Engineered Bone Marrow Tissue - Methods and apparatus for a bioreactor system for growing cells are provided. The bioreactor system includes a reaction chamber for cultivating harvested tissue in a culture medium, and a hydrodynamic apparatus connected to the reaction chamber that generates a cyclic negative pressure differential in the bioreactor. Additionally, the apparatus includes a collection enclosure for collecting cells produced by tissue in the reaction chamber. Also encompassed are embodiments for harvesting and preparing cells and tissue sections, combining the cells and the tissue sections in a culture medium to cultivate tissue, maintaining the tissue under conditions that permit production of cell products, applying cyclic negative pressure to the culture over a period of time, and collecting cell products discharged. Further disclosed are embodiments for placing harvested tissue and cells in a diffusion chamber, creating an oscillating negative pressure differential in the bioreactor over a period of time, and collecting the cell products. | 2009-04-23 |
20090104699 | Container System for Tissue Stabilization for Molecular and Histopathology Diagnostics - A system for storing a biological sample for transfer between two different environments is provided. The system includes a first container defining a first container interior, and a second container defining a second container interior. A first closure is provided for enclosing the open end of the first container, with the first closure adapted to receive a sample holder. A second closure is also provided for enclosing the open end of the second container. The first container is adapted to removably receive the sample holder therein when the first closure encloses the open end of the first container, and the second container is adapted to subsequently receive the same sample holder therein when the first closure encloses the open end of the second container. | 2009-04-23 |
20090104700 | METHODS FOR TRANSFERRING MOLECULAR SUBSTANCES INTO PLANT CELLS - Provided are methods for introducing a molecule of interest into a plant cell comprising a cell wall. Methods are provided for genetically or otherwise modifying plants and for treating or preventing disease in plant cells comprising a cell wall. | 2009-04-23 |
20090104701 | METHOD FOR THE PRODUCTION OF BIOMASS FROM PLANT DIFFERENTIATED TISSUE - The present invention provides a method and a culture medium for the production of food biomass by directly culturing seed kernel tissue, or seed cotyledonary differentiated tissue. The culture medium of the present invention contains at least DKW culture medium, Vitamin MS culture medium with an enriched concentration of thiamine, sacarose, kinetine, adenine, 2,4 | 2009-04-23 |
20090104702 | Attenuated chimeric flavivirus bearing attenuated Japanese encephalitis virus gene as backbone - A nucleic acid molecule containing nucleotide sequences that encode the capsid protein, pre-membrane protein and non-structural protein of Japanese encephalitis virus, and a nucleotide sequence that encodes the envelop protein of a second flavivirus, wherein the nucleotide sequence(s) that encode(s) the pre-membrane protein and/or non-structural protein of Japanese encephalitis virus contain(s) nucleotide mutations that produce one or more amino acid mutations that attenuate the virus. | 2009-04-23 |
20090104703 | Nucleic Acids Encoding Proteins Involved in Sensory Transduction - The invention provides isolated nucleic acid and amino acid sequences of sensory cell specific polypeptides, antibodies to such polypeptides, methods of detecting such nucleic acids and polypeptides, and methods of screening for modulators of sensory cell specific polypeptides. | 2009-04-23 |
20090104704 | APPARATUS AND METHOD FOR ANAYLIZING SAMPLES - A sample analyzer comprises a reaction tray, a sample/reagent tray, and a probe. The reaction tray performs a first number of stops and rotations during an operating cycle, wherein the first number is configured to cause each of the reaction vessels to stop once at a position for the test before any of the number of the reaction vessels stops at the position for a second time. The sample/reagent tray rotates one of a sample container and reagent containers to a sample/reagent retrieving position during an operating cycle. The probe dispenses test sample(s), first reagent, and second reagent during different periods in different stop periods during an operating cycle. A method for analyzing samples is also disclosed. | 2009-04-23 |
20090104705 | Ascorbic acid conjugates - Oxidative stress, resulting from the generation of reactive oxygen species, contributes to the development of a multitude of age-related diseases. Current methods of assessing oxidative stress levels range from the detection of lipid peroxidation products, such as F | 2009-04-23 |
20090104706 | CYTOKINE RECEPTOR MODULATORS, METHOD OF IDENTIFYING SAME, AND METHOD OF MODULATING CYTOKINE RECEPTORS ACTIVITY WITH SAME - The present invention relates to a method for identifying a non-competitive peptide, which inhibits the activity of a cytokine receptor. This method includes the steps of selecting a candidate peptide containing from about 7 to about 20 amino acids derived from a flexible region of a cytokine receptor, and determining the ability of the peptide to inhibit or promote the oligomerization and/or activation of the receptor by measuring an activity of the receptor in the absence or the presence of the candidate peptide, wherein the non-competitive peptide is selected when the activity of the receptor is measurably lower in the presence of the peptide as compared to in the absence of the peptide so identified. This invention also provides agonists of cytokine receptor activity. Pharmaceutical compositions that comprise the identified peptides are disclosed. Also disclosed are methods for treating patients with a disease or condition associated with abnormal cytokine receptor mediated function or activity such as inflammatory, autoimmune and vascular diseases. | 2009-04-23 |
20090104707 | ANALYTE DETECTION WITH MAGNETIC SENSORS - Methods for analyte detection with magnetic sensors are provided. Aspects of the methods include producing a magnetic sensor device having a magnetically labeled analyte from a sample, such as a serum sample, bound to a surface of a magnetic sensor thereof; and obtaining a signal, e.g., a real-time signal, from the magnetic sensor to determine whether the analyte is present in the sample. Also provided are devices, systems and kits that find use in practicing the methods of the invention. The methods, devices, systems and kits of the invention find use in a variety of different applications, including detection of biomarkers, such as disease markers. | 2009-04-23 |
20090104708 | HUMAN LAMININ RECEPTOR CRYSTAL AND USES THEREOF - A human laminin receptor crystal is disclosed. Methods are disclosed for using various computer and non-computer means in order to develop models for use in the development of novel therapeutics that block and/or mimic laminin receptor interactions in the setting of, among others, Alzheimer's disease, other neurological disorders, cancer, and viral and bacterial infections. | 2009-04-23 |
20090104709 | FLUID TRANSFER DEVICES - A fluid transfer device includes a body and a sample holding reservoir formed in the body. The sample holding reservoir is capable of imbibing a fixed and very small quantity of fluid from a fluid source and dispensing the fixed quantity of fluid therefrom at a destination. The fluid transfer device may be manufactured from various materials including semiconductor materials such as silicon, polymer materials, ceramic material, and metal or metallic materials. The fluid transfer device may be used to puncture a closure covering the fluid source or the destination. | 2009-04-23 |
20090104710 | COLORIMETRIC ABSORBANCE MEASUREMENT METHOD, APPARATUS AND SYSTEM - Various embodiments disclose a colorimetric absorbance measurement method and a system for performing the same. The method comprises driving a reaction tray carrying a plurality of reaction cuvettes to rotate at a speed; transferring or rotating filters on a filter wheel to a light path of a light beam, starting from a filter of a first wavelength; and sampling photoelectric data when the light beam has passed through each reaction cuvette in some embodiments. The method ensures consistency in the measurement and synchronization between the calibration and the sample test and reliability of the measurements. Various embodiments simplify data processing and reduce the complexity of the system. | 2009-04-23 |
20090104711 | FLUORESCENT MARKER COMPRISING DOUBLE BOND ESTER GROUP AND METHOD FOR MARKING AND DETECTING THE SAME - Disclosed herein are fluorescent markers having a double bond ester group and a method for marking and detecting the same. More particularly, disclosed are a method for identifying oil products, which comprises marking the oil products with fluorescent markers having an unsaturated double bond ester group, adding a developing agent having a function of inducing specific fluorescence to the marked oil products, and detecting the fluorescent marker with a fluorescence spectrophotometer in the UV/VIS region, as well as said markers. | 2009-04-23 |
20090104712 | HEPATITIS B PRE-S2 NUCLEIC ACID - This invention relates to a nucleic acid molecule encoding a middle Hepatitis B virus (HBV) surface protein, a vector comprising the nucleic acid molecule, a host cell comprising the vector, and a composition comprising the expression products of this vector, which may comprise middle HBV surface protein, or a mixture of middle HBV surface protein and small HBV surface protein. The compositions of the invention may be useful for expressing a middle HBV surface protein, or a mixture of small and middle HBV surface proteins in defined ratios, determining the binding of an antibody to a middle or small HBV surface protein, determining the quality of an anti-middle or an anti-small HBV surface protein antibody, or determining the quality of a kit containing anti-middle or anti-small HBV surface protein antibodies. | 2009-04-23 |
20090104713 | Phenobarbital derivatives useful in immunoassay - Phenobarbital derivatives synthesized out of the alkyl chain at the 5-position, particularly with hydrophilic properties, and carrying an active ester at the end, allow formation of aminodextran conjugates that give curves in the desired range of the assay in the ONLINE TDM microparticle assay format when matched against the Roche FPIA antibody specific for phenobarbital (“an antibody specific for phenobarbital”). | 2009-04-23 |
20090104714 | VISUAL GLUCOSE SENSOR AND METHODS OF USE THEREOF - A method for determining the presence or amount of one or more ligands or analytes in a sample including contacting the sample with a biosensor having an environmentally-sensitive dye conjugated to a binding member, wherein the biosensor compound exhibits a detectable color change as a result of binding to the ligand or analyte or as a result of a change in concentration of the ligand or analyte in the sample. The presently disclosed biosensors can be used to detect the presence of or amount of physiologically-important metabolites, such as glucose, fatty acids, and lactate, in biological samples. | 2009-04-23 |
20090104715 | Method for mixing two or more types of liquids in porous carrier - It is an object of the present invention to provide a method for simply mixing two or more types of liquids in a porous carrier. The present invention provides a method for mixing two or more types of liquids in a porous carrier, which comprises: laminating a first porous carrier consisting of an upstream portion and a down stream portion that are integrated with each other on a second porous carrier consisting of an upstream portion and a downstream portion that are integrated with each other, such that the upstream portion of the first porous carrier and the upstream portion of the second porous carrier form a bifurcated portion; adding a first liquid to the upstream portion of the first porous carrier; adding a second liquid to the upstream portion of the second porous carrier; and giving external force in a vertical direction towards the first and second porous carriers at a position wherein the first porous carrier is laminated on the second porous carrier on the side downstream of the bifurcation point of the bifurcated portion, so as to mix the first liquid with the second liquid in the first and second porous carriers. | 2009-04-23 |
20090104716 | TARGET SUBSTANCE DETECTING ELEMENT, TARGET SUBSTANCE DETECTING APPARATUS, AND TARGET SUBSTANCE DETECTING METHOD - The present invention enables to classify and measure two or more kinds of target substances which have the same recognition site recognized by a specific capturing body. Specifically, by using a target substance detecting element for detecting two or more targets, whose kinds are different mutually, at the same time, the target substance detecting element, characterized by having a base material, two or more kinds of metal structures provided on a surface of the base material, and a target capturing body provided on each surface of the two or more kinds of metal structures, and in that the number of kinds of the metal structures are equal to or more than the number of kinds of the target substances, concentrations of the two or more kinds of target substances can be calculated by integrating and analyzing detection signals detected from the target substance detecting element. | 2009-04-23 |
20090104717 | System to Reduce Incubation Time in Immunological Testing Using Enhanced Microwaves - A system for shortening incubation times on immunoassays employs energy that is applied to the assays. Energy is applied in careful gradations so that chemical bonds are not broken. If polyclonal antibodies, as opposed to monoclonal antibodies, are worked with, then because the bonds are stronger, cooling is employed in combination with the extra energy delivered. | 2009-04-23 |
20090104718 | Method of magnetic tunneling layer processes for spin-transfer torque MRAM - A method for forming a MTJ in a STT-MRAM is disclosed in which the easy-axis CD is determined independently of the hard-axis CD. One approach involves two photolithography steps and two etch steps to form a post in a hard mask which is transferred through a MTJ stack of layers by a third etch process. Optionally, the third etch may stop on the tunnel barrier or in the free layer. A second embodiment involves forming a first parallel line pattern on a hard mask layer and transferring the line pattern through the MTJ stack with a first etch step. A planar insulation layer is formed adjacent to the sidewalls in the line pattern and then a second parallel line pattern is formed which is transferred by a second etch through the MTJ stack to form a post pattern. Etch end point may be controlled independently for hard-axis and easy-axis dimensions. | 2009-04-23 |
20090104719 | Plasma Doping System with In-Situ Chamber Condition Monitoring - A method of in-situ monitoring of a plasma doping process includes generating a plasma comprising dopant ions in a chamber proximate to a platen supporting a substrate. A platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A dose of ions attracted to the substrate is measured. At least one sensor measurement is performed to determine the condition of the plasma chamber. In addition, at least one plasma process parameter is modified in response to the measured dose and in response to the at least one sensor measurement. | 2009-04-23 |
20090104720 | Photoresist Coating Apparatus Having Nozzle Monitoring Unit and Method for Supplying Photoresist Using the Same - Provided are a photoresist coating apparatus and a method of coating photoresist using the same. The apparatus includes a photoresist supply line through which photoresist is supplied. A fluid control valve is connected to the photoresist supply line to control the flow of the photoresist. A nozzle assembly is connected to the photoresist supply line at a rear end of the fluid control valve. The nozzle assembly includes a nozzle located above the center of a semiconductor wafer loaded in a photoresist coating unit to spray the photoresist. A camera is located outside the photoresist coating unit to monitor the shape or spraying amount of the nozzle located at the tip of the nozzle assembly. A controller converts data monitored by the camera into an electric signal and processes the electric signal. | 2009-04-23 |
20090104721 | Deposition Method and Method for Manufacturing Light Emitting Device - An object is to provide a deposition method by which a film having a desired shape can be formed with high productivity. Further, a method for manufacturing a light emitting device by which a light emitting device having high definition can be manufactured with high productivity is provided. Specifically, even in the case of using a large-sized substrate, a method for manufacturing a light emitting device having high definition is provided. By using a deposition target substrate and a shadow mask having a smaller area than the deposition target substrate, the deposition target substrate and the shadow mask are aligned with each other, and an evaporation material is deposited on at least part of the deposition target substrate through a plurality of deposition steps. As an evaporation source, a light absorption layer and a supporting substrate having the evaporation material is preferably used. | 2009-04-23 |
20090104722 | METHOD FOR MANUFACTURING PIXEL STRUCTURE - A method for manufacturing a pixel structure includes providing a substrate having an active device thereon and forming a dielectric layer covering the active device. The dielectric layer has a contact hole disposed over the active device. Next, a first photoresist layer is formed on the dielectric layer over the active device, and a transparent conductive layer is formed to cover a portion of the dielectric layer and the first photoresist layer. The transparent conductive layer is electrically connected to the active device via the contact hole. Besides, the transparent conductive layer is irradiated with use of a laser beam, and a portion of the transparent conductive layer on the first photoresist layer is removed, such that the other portion of the transparent conductive layer on the portion of the dielectric layer forms a pixel electrode. The first patterned photoresist layer is then removed. | 2009-04-23 |
20090104723 | METHOD FOR MANUFACTURING DISPLAY DEVICE - Etching is performed using mask layers formed by a multi-tone mask which is a light-exposure mask through which light is transmitted to have a plurality of intensity, in a method for manufacturing a display device including an inverted staggered thin film transistor with a channel-etched structure. Further, a gate wiring layer and a source wiring layer are formed over a substrate in the same step, and the source wiring layer is separated (disconnected) at an intersection of the gate wiring layer and the source wiring layer. The separated source wiring layers are connected to each other electrically through an opening (a contact hole) via a conductive layer formed over a gate insulating layer in the same step as formation of source and drain electrode layers. | 2009-04-23 |
20090104724 | Method of manufacturing liquid crystal display device - A method of manufacturing a liquid crystal display device which includes pixel electrodes and common electrodes which are alternatively arranged in each pixel defined on a substrate, including the steps of: forming a conductive film on the substrate; forming a mask layer, of which etching selection ratio is different from the conductive layer, on the conductive layer; forming a photo-resist pattern of a fixed pattern on the mask layer; forming a mask pattern, which has an undercut shape to the photo-resist pattern, by etching the mask layer by use of the photo-resist pattern as an etching mask; removing the photo-resist pattern; and etching the conductive film by use of the mask pattern as an etching mask, to provide at least any one of the common electrode and the pixel electrode. | 2009-04-23 |
20090104725 | Liquid crystal display device and method for manufacturing the same - A liquid crystal display device includes first and second substrates bonded to each other, first column spacers on the first substrate, protrusions on the second substrate that contact a center portion of an upper surface of the spacers, respectively, recesses formed in the second substrate surrounding the protrusions, respectively, and a liquid crystal layer between the first and second substrates. | 2009-04-23 |
20090104726 | LED Fabrication Via Ion Implant Isolation - A semiconductor light emitting diode includes a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, and a resistive gallium nitride region on the n-type epitaxial layer and adjacent the p-type epitaxial layer for electrically isolating portions of the p-n junction. A metal contact layer is formed on the p-type epitaxial layer. Some embodiments include a semiconductor substrate, an epitaxial layer of n-type Group III nitride on the substrate, a p-type epitaxial layer of Group III nitride on the n-type epitaxial layer and forming a p-n junction with the n-type layer, wherein portions of the epitaxial region are patterned into a mesa and wherein the sidewalls of the mesa comprise a resistive Group III nitride region for electrically isolating portions of the p-n junction. In method embodiments disclosed, the resistive border is formed by forming an implant mask on the p-type epitaxial region and implanting ions into portions of the p-type epitaxial region to render portions of the p-type epitaxial region semi-insulating. A photoresist mask or a sufficiently thick metal layer may be used as the implant mask. In some method embodiments, a mesa is formed in the epitaxial region prior to implantation. During implantation, the epiwafer is mounted at an angle such that ions are implanted directly into the sidewalls of the mesa, thereby rendering portions of the mesa semi-insulating. The epiwafer may be rotated during ion implantation. | 2009-04-23 |
20090104727 | HIGH POWER SEMICONDUCTOR LASER DIODES - A high power laser source comprises a bar of laser diodes, a submount onto which said laser bar is affixed, and a cooler onto which said submount is affixed. The laser bar has a first coefficient of thermal expansion (CTE | 2009-04-23 |
20090104728 | Gallium Nitride-Based Compound Semiconductor Multilayer Structure and Production Method Thereof - An object of the present invention is to provide a gallium nitride compound semiconductor multilayer structure useful for producing a gallium nitride compound semiconductor light-emitting device which operates at low voltage while maintaining satisfactory light emission output. The inventive gallium nitride compound semiconductor multilayer structure comprises a substrate, and an n-type layer, a light-emitting layer, and a p-type layer formed on the substrate, the light-emitting layer having a multiple quantum well structure in which a well layer and a barrier layer are alternately stacked repeatedly, said light-emitting layer being sandwiched by the n-type layer and the p-type layer, wherein the well layer comprises a thick portion and a thin portion, and the barrier layer contains a dopant. | 2009-04-23 |
20090104729 | SOLID-STATE IMAGE SENSOR AND IMAGING SYSTEM - At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring layer cross section to reduce dark currents and 1/f noise. | 2009-04-23 |
20090104730 | METHODS FOR FABRICATING A CMOS IMAGE SENSOR - A method for fabricating a CMOS image sensor includes providing a substrate having a sensor array region and a peripheral region defined thereon, forming at least a contact pad on the substrate of the peripheral region, forming a first dielectric layer covering the contact pad on the substrate, performing a first etching process to expose the contact pad and to form a step height, forming an optical shielding layer on the first dielectric layer, forming a plurality of color filters on the first dielectric layer, sequentially forming a planarizing layer and a plurality of micro-lenses on the first dielectric layer. | 2009-04-23 |
20090104731 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device manufacturing method including a process of forming a silicon oxide film by thermally oxidizing silicon in the atmosphere of oxygen gas or in the atmosphere of mixed gas of oxygen and hydrogen at a temperature of 800° C. or more in the state in which at least the silicon surface serving as a light-receiving portion of a photodiode is exposed, and a process of depositing a silicon nitride film on the silicon oxide film. At least the silicon oxide film and the silicon nitride film are finally left on the surface of the photodiode as an antireflection film. | 2009-04-23 |
20090104732 | CVD PROCESS GAS FLOW, PUMPING AND/OR BOOSTING - The present invention generally comprises a method and apparatus for supplemental pumping, gas feed, and/or RF current for a process. When depositing amorphous silicon, the amount of process gases, RF current, and vacuum may be less than the amount of process gases, RF current, and vacuum necessary to deposit microcrystalline silicon. When a single chamber is used to deposit both amorphous and microcrystalline silicon, coupling a supplemental power supply, a supplemental gas source, and a supplemental vacuum pump to the chamber may be beneficial. The supplemental power supply, vacuum pump, and gas source, may be coupled with the chamber when the microcrystalline silicon is deposited and uncoupled when amorphous silicon is deposited. In a cluster tool arrangement, the supplemental power supply, vacuum pump, and gas source may serve multiple chambers that each deposit both amorphous and microcrystalline silicon. | 2009-04-23 |
20090104733 | MICROCRYSTALLINE SILICON DEPOSITION FOR THIN FILM SOLAR APPLICATIONS - Embodiments of the invention as recited in the claims relate to thin film multi-junction solar cells and methods and apparatuses for forming the same. In one embodiment a method of forming a thin film multi-junction solar cell over a substrate is provided. The method comprises positioning a substrate in a reaction zone, providing a gas mixture to the reaction zone, wherein the gas mixture comprises a silicon containing compound and hydrogen gas, forming a first region of an intrinsic type microcrystalline silicon layer on the substrate at a first deposition rate, forming a second region of the intrinsic type microcrystalline silicon layer on the substrate at a second deposition rate higher than the first deposition rate, and forming a third region of the intrinsic type microcrystalline silicon layer on the substrate at a third deposition rate lower than the second deposition rate. | 2009-04-23 |
20090104734 | POWER SEMICONDUCTOR MODULE METHOD - A method for assembling a power module includes providing a casing with a plurality of receiving elements. At least one substrate carrying at least one semiconductor chip is provided within the casing. At least one support element is provided. An elastically stressed cover is arranged over the at least one support element, and the cover is released so that the elastically stressed cover is restrained by the at least one support element and the plurality of receiving elements. | 2009-04-23 |
20090104735 | SEMICONDUCTOR PACKAGE HAVING INCREASED RESISTANCE TO ELECTROSTATIC DISCHARGE - Embodiments of the invention include a semiconductor integrated circuit package that includes a substrate having an integrated circuit die attached thereto. The package includes a ESD shield attached to the substrate. The ESD shield configured to increase the ESD hardness of the package. The ESD shield can further serve to stiffen the package to prevent warping and operate as a heat spreader. | 2009-04-23 |
20090104736 | Stacked Packaging Improvements - A plurality of microelectronic assemblies ( | 2009-04-23 |
20090104737 | METHOD FOR MANUFACTURING TFT SUBSTRATE - To provide a method for manufacturing a TFT substrate in which a channel length can be stably formed while the number of masks is reduced, and a method for manufacturing a TFT substrate which can individually control impurity concentrations for channels of an n-type TFT and a p-type TFT without increasing the number of masks. A method for manufacturing a TFT substrate includes processing a gate of the n-type TFT, a gate of the p-type TFT, and an upper capacitor electrode by using a half-tone mask instead of some of normal masks to reduce the number of masks, and changing impurity concentrations of semiconductor films located in regions which become a channel of the n-type TFT, a source and a drain of the n-type TFT, a channel of the p-type TFT, a source and a drain of the p-type TFT, and an lower capacitor electrode, by using a pattern of the half-tone mask and a normal mask. | 2009-04-23 |
20090104738 | Method of Forming Vias in Silicon Carbide and Resulting Devices and Circuits - A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device in epitaxial layers on a surface of a silicon carbide substrate and with at least one metal contact for the device on the uppermost surface of the epitaxial layer. The opposite surface of the substrate is then ground and polished until it is substantially transparent. The method then includes masking the polished surface of the silicon carbide substrate to define a predetermined location for at least one via that is opposite the device metal contact on the uppermost surface of the epitaxial layer and etching the desired via in steps. The first etching step etches through the silicon carbide substrate at the desired masked location until the etch reaches the epitaxial layer. The second etching step etches through the epitaxial layer to the device contacts. Finally, metallizing the via provides an electrical path from the first surface of the substrate to the metal contact and to the device on the second surface of the substrate. | 2009-04-23 |
20090104739 | METHOD OF FORMING CONFORMAL SILICON LAYER FOR RECESSED SOURCE-DRAIN - Processes for non-selectively forming one or more conformal silicon-containing epitaxial layers on recess corners are disclosed. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the formation of a non-selective epitaxial layer involves exposing a substrate in a process chamber to deposition gases including a silicon source such as silane and a higher order silane, followed by heating the substrate to promote solid phase epitaxial growth. | 2009-04-23 |
20090104740 | Semiconductor device producing method - Disclosed is a producing method of a semiconductor device, including: loading a silicon substrate into a processing chamber, the silicon substrate having a silicon nitride film or a silicon oxide film on at least a portion of a surface thereof and a silicon surface being exposed from the surface; and alternately repeating a first introducing at least a silane-compound gas into the processing chamber and a second introducing at least etching gas a plurality of times to selectively grow an epitaxial film on the silicon surface, wherein the alternate repeating is started with the second introducing prior to the first introducing. | 2009-04-23 |
20090104741 | METHODS OF FABRICATING SEMICONDUCTOR DEVICES USING A PLASMA PROCESS WITH NON-SILANE GAS INCLUDING DEUTERIUM - Semiconductor devices are fabricated using a plasma process with a non-silane gas that includes deuterium, and which may result in improved device reliability and/or other improved device operational characteristics. One such method can include forming a gate oxide layer on a transistor region, which is defined on a substrate, and forming a gate electrode on the gate oxide layer. An etch stop layer is formed on the gate oxide layer and the gate electrode. A plasma process is performed on the interface between the gate oxide layer and the substrate using a non-silane treatment gas including deuterium. An interlayer dielectric layer is formed on the etch stop layer. A bottom metal line is formed on the interlayer dielectric layer. | 2009-04-23 |
20090104742 | METHODS FOR FORMING GATE ELECTRODES FOR INTEGRATED CIRCUITS - A method of forming an integrated circuit can include the steps of providing a substrate having a semiconducting surface and forming a plurality of semiconducting multilayer features on the substrate surface, the features comprising a base layer and a compositionally different capping layer on the base layer. The method can also include forming spacers on sidewalls of the plurality of features, etching the capping layer, where the etching comprises selectively removing the capping layer, removing at least a portion of the base layer to form a plurality of trenches, and forming gate electrodes in the trenches. | 2009-04-23 |
20090104743 | Nitrogen Profile in High-K Dielectrics Using Ultrathin Disposable Capping Layers - Metal Oxide Semiconductor (MOS) transistors fabricated using current art may utilize a nitridation process on the gate dielectric to improve transistor reliability. Nitridation by the current art, which involves exposing the gate dielectric to a nitridation source, produces a significant concentration of nitrogen at the interface of the gate dielectric and the transistor substrate, which adversely affects transistor performance. This invention comprises the process of depositing a sacrificial layer on the gate dielectric prior to nitridation, exposing the sacrificial layer to a nitridation source, during which time nitrogen atoms diffuse through the sacrificial layer into the gate dielectric, then removing the sacrificial layer without degrading the gate dielectric. Work associated with this invention on high-k gate dielectrics has demonstrated a 20 percent reduction in nitrogen concentration at the gate dielectric-transistor substrate interface. | 2009-04-23 |
20090104744 | VERTICAL GATED ACCESS TRANSISTOR - According to one embodiment of the present invention, a method of forming an apparatus comprises forming a plurality of deep trenches and a plurality of shallow trenches in a first region of a substrate. At least one of the shallow trenches is positioned between two deep trenches. The plurality of shallow trenches and the plurality of deep trenches are parallel to each other. The method further comprises depositing a layer of conductive material over the first region and a second region of the substrate. The method further comprises etching the layer of conductive material to define a plurality of lines separated by a plurality of gaps over the first region of the substrate, and a plurality of active device elements over the second region of the substrate. The method further comprises masking the second region of the substrate. The method further comprises removing the plurality of lines from the first region of the substrate, thereby creating a plurality of exposed areas from which the plurality of lines were removed. The method further comprises etching a plurality of elongate trenches in the plurality of exposed areas while the second region of the substrate is masked. | 2009-04-23 |
20090104745 | INTEGRATION METHOD FOR DUAL DOPED POLYSILICON GATE PROFILE AND CD CONTROL - In accordance with the present teachings, methods of making dual doped polysilicon gates are provided. The method can include providing a semiconductor structure including a plurality of polysilicon gates having a first critical dimension disposed over a dielectric layer and planarizing the plurality of polysilicon gates with a spin-on material to form a plurality of planarized polysilicon gates. The method can further include doping an exposed first region with p-type dopants to form a plurality of p-doped planarized polysilicon gates and doping an exposed second region with n-type dopants to form a plurality of n-doped planarized polysilicon gates. The method can also include removing the spin-on material to form a plurality of p-doped polysilicon gates and a plurality of n-doped polysilicon gates, wherein critical dimension of each of the plurality of n-doped polysilicon gates and the plurality of p-doped polysilicon gates are substantially similar to the first critical dimension. | 2009-04-23 |
20090104746 | CHANNEL STRAIN INDUCED BY STRAINED METAL IN FET SOURCE OR DRAIN - A process for forming a FET (e.g., an n-FET or a p-FET), in which during formation a metal which makes up a source or drain of the transistor is stressed so that stress is induced in a semiconductor channel of the transistor. | 2009-04-23 |
20090104747 | METHOD FOR FABRICATING DEEP TRENCH DRAM ARRAY - A method for fabricating deep trench DRAM array is disclosed. A substrate having thereon a memory array area is provided. An array of deep trench patterns is formed in the memory array area. The deep trench (DT) capacitor patterns include first dummy DT patterns in a first column, second dummy DT patterns in a first row and a plurality of effective DT capacitor patterns. Each of the first dummy DT patterns has an extended width (W) along a first direction, which is greater than or equal to a photomask's shift tolerance. Each of the second dummy DT patterns has an extended length (L) along a second direction, which is greater than or equal to the photomask's shift tolerance. The first direction is normal to the second direction. | 2009-04-23 |
20090104748 | METHOD FOR FABRICATING SELF-ALIGNED RECESS GATE TRENCH - A method for forming a recess gate trench includes a plurality of trench capacitors formed into a substrate having thereon a pad layer. A portion of the trench top oxide layer of each trench capacitor is etched away to form a hole. The hole is filled with a silicon layer that is coplanar with the pad layer. Shallow trench isolation (STI) structure is formed. A portion of the STI structure is etched away. The pad layer is then stripped. A spacer is formed on a sidewall of the silicon layer. A gate trench is then etched into the substrate in a self-aligned fashion. | 2009-04-23 |
20090104749 | Methods of Manufacturing Semiconductor Devices Having Contact Plugs in Insulation Layers - Methods of manufacturing semiconductor devices are provided in which a first contact plug is formed on a first active region in a substrate and a second contact plug is formed on a second active region in the substrate. A height of an upper surface of the second contact plug from the substrate is greater than a height of an upper surface of the first contact plug from the substrate. A third contact plug is formed on the second contact plug. A first spacer is formed on a side surface of the third contact plug. A third interlayer insulation layer is formed that covers the third contact plug. The third interlayer insulation layer is patterned to form a third opening that exposes the first contact plug. A fourth contact plug is formed in the third opening that is electrically connected to the first contact plug. | 2009-04-23 |
20090104750 | METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, DISPLAY PANEL, AND DISPLAY DEVICE - If the size of a single crystal silicon layer attached is not appropriate, even when a large glass substrate is used, the number of panels to be obtained cannot be maximized. Therefore, in the present invention, a substantially quadrangular single crystal semiconductor substrate is formed from a substantially circular single crystal semiconductor wafer, and a damaged layer is formed by irradiation with an ion beam into the single crystal semiconductor substrate. A plurality of the single crystal semiconductor substrates are arranged so as to be separated from each other over one surface of a supporting substrate. By thermal treatment, a crack is generated in the damaged layer and the single crystal semiconductor substrate is separated while a single semiconductor layer is left over the supporting substrate. After that, one or a plurality of display panels is manufactured from the single crystal semiconductor layer bonded to the supporting substrate. | 2009-04-23 |
20090104751 | NARROW SEMICONDUCTOR TRENCH STRUCTURE - Systems and methods for narrow semiconductor trench structures. In a first method embodiment, a method for forming a narrow trench comprises forming a first layer of insulating material on a substrate and creating a trench through the first layer of insulating material and into the substrate. A second insulating material is formed on the first layer and on exposed portions of the trench and the second insulating material is removed from the first layer of insulating material and the bottom of the trench. The trench is filled with an epitaxial material and the first layer of insulating material is removed. A narrow trench is formed by the removal of remaining portions of the second insulating material. | 2009-04-23 |
20090104752 | Method for Producing Soi Wafer - The present invention relates to a method for producing an SOI wafer, having at least a step of a bonding heat treatment for increasing bonding strength by heat-treating a bonded wafer obtained by bonding a base wafer and a bond wafer, in which argon is ion-implanted from a surface of either the base wafer or the bond wafer at a dosage of 1×10 | 2009-04-23 |
20090104753 | Process of Forming a Curved Profile on a Semiconductor Substrate - A semiconductor substrate is shaped to have a curved surface profile by anodization. Prior to being anodized, the substrate is finished with an anode pattern on its bottom surface so as to be consolidated into a unitary structure in which the anode pattern is precisely reproduced on the substrate. The anodization utilizes an electrolytic solution which etches out oxidized portion as soon as it is formed as a result of the anodization, to thereby develop a porous layer in a pattern in match with the anode pattern. The anode pattern brings about an in-plane distribution of varying electric field intensity by which the porous layer develops into a shape complementary to a desired surface profile. Upon completion of the anodization, the curves surface is revealed on the surface of the substrate by etching out the porous layer and the anode pattern from the substrate. | 2009-04-23 |
20090104754 | METHOD TO IMPROVE ELECTRICAL LEAKAGE PERFORMANCE AND TO MINIMIZE ELECTROMIGRATION IN SEMICONDUCTOR DEVICES - Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices are generally described herein. Other embodiments may be described and claimed. | 2009-04-23 |
20090104755 | HIGH QUALITY SILICON OXIDE FILMS BY REMOTE PLASMA CVD FROM DISILANE PRECURSORS - A method of depositing a silicon and nitrogen containing film on a substrate. The method includes introducing silicon-containing precursor to a deposition chamber that contains the substrate, wherein the silicon-containing precursor comprises at least two silicon atoms. The method further includes generating at least one radical nitrogen precursor with a remote plasma system located outside the deposition chamber. Moreover, the method includes introducing the radical nitrogen precursor to the deposition chamber, wherein the radical nitrogen and silicon-containing precursors react and deposit the silicon and nitrogen containing film on the substrate. Furthermore, the method includes annealing the silicon and nitrogen containing film in a steam environment to form a silicon oxide film, wherein the steam environment includes water and acidic vapor. | 2009-04-23 |
20090104756 | METHOD TO FORM A REWRITEABLE MEMORY CELL COMPRISING A DIODE AND A RESISTIVITY-SWITCHING GROWN OXIDE - A method is described to form a rewriteable memory cell including a diode and an oxide layer, wherein the resistivity of the oxide layer can be reversibly switched. In preferred embodiments, the oxide layer is a grown oxide. The diode is preferably formed of polysilicon which has been crystallized in contact with a silicide which has a close lattice match to silicon. The silicide provides a crystallization template such that the polysilicon is large-grained with few defects, and thus relatively low-resistivity. In preferred embodiments, a monolithic three dimensional memory array can be formed, in which multiple memory levels of such rewriteable memory cells are monolithically formed vertically stacked above a substrate. | 2009-04-23 |
20090104757 | Method for producing group III nitride-based compound semiconductor - An object of the present invention is to remove micro-scratches on a surface of a GaN substrate cut from a GaN ingot. The invention is directed to establish a method for surface treatment of a GaN substrate, including heating the surface in an atmosphere containing trimethylgallium, ammonia, and hydrogen. It is preferable that the trimethylgallium feeding rate is 150 μmol/min or higher, the ratio of trimethylgallium feeding rate to ammonia feeding rate (V/III ratio) is 1,200 to 4,000, and the heating temperature is 1,000° C. to 1,250° C. In addition, the temperature of the surface treatment is set to be higher than that of the following GaN growth, and the feed rate of trimethylgallium is lower than that of the growth procedure. RMS of roughness on the substrate was equal to or less than 1.3 nm, and the substrate whose step condition is excellent can be obtained. | 2009-04-23 |
20090104758 | GALLIUM NITRIDE MATERIALS AND METHODS - The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications. | 2009-04-23 |
20090104759 | Methods of manufacturing semiconductor devices including a doped silicon layer - Methods for manufacturing a semiconductor device include forming a seed layer containing a silicon material on a substrate. An amorphous silicon layer containing amorphous silicon material is formed on the seed layer. The amorphous silicon layer is doped with an impurity. A laser beam is irradiated onto the amorphous silicon layer to produce a phase change of the amorphous silicon layer and change the amorphous silicon layer into a single-crystal silicon layer based on the seed layer. | 2009-04-23 |
20090104760 | VERTICAL CVD APPPARATUS FOR FORMING SILICON-GERMANIUM FILM - A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights. | 2009-04-23 |