16th week of 2011 patent applcation highlights part 2 |
Patent application number | Title | Published |
20110089349 | ELECTRONIC ADAPTER FOR CONTROLLING A BISTABLE VALVE - An electronic adapter and a method for controlling a bistable valve for liquid or gaseous media is provided. The valve has a first and a second stable switching state, wherein in the first switching state applying a switch voltage with a first polarity for at least a switch time period to electric terminals of the valve causes the valve to change to the second switching state and wherein in the second switching state applying a switch voltage with an opposite second polarity for at least the switch time period causes the valve to change from the second to the first switching state, wherein the adapter has at least one input connectable to a control unit and an output connectable to the terminals, wherein the adapter is arranged for outputting the switch voltage with the first polarity for at least the switch time period upon detection of a first signal event at the input and wherein the adapter is arranged for outputting the switch voltage with the second polarity for at least the switch time period upon detection of a second signal event at the input. | 2011-04-21 |
20110089350 | FLUID-BIASED HYDRAULIC CONTROL VALVE WITH ARMATURE PISTON - A hydraulic control valve has a solenoid body, a selectively energizable coil, and an armature positioned adjacent the coil. The coil is energizable to generate a magnetic force that moves the armature from a first position to a second position. A pole piece is positioned to establish a gap between the pole piece and the armature. The pole piece has a cavity that opens at the gap. A piston extends from the armature into the cavity and moves with the armature. The armature is biased to seat at a valve seat in the first position by pressurized fluid. Magnetic force required to move the armature away from the valve seat is a function of the difference between an area of the piston and an area defined by contact of the armature at the valve seat. | 2011-04-21 |
20110089351 | Programmable drive and control assembly for a solenoid valve, in particular for irrigation systems - A programmable drive and control assembly ( | 2011-04-21 |
20110089352 | OVERMOLDED OR PRESSED-IN SLEEVE FOR HYDRAULIC ROUTING OF SOLENOID - A valve having a metal insert with a fluid passage formed in the metal insert. A composite valve body is disposed at least partially around the metal insert and having at least one port in fluid communication with the fluid passage with the metal insert. A valve member is partially disposed in the metal insert and operable to control the fluid flow through the fluid passage of the metal insert and parts of the valve body. | 2011-04-21 |
20110089353 | SEISMIC SAFETY VALVE AND VALVE ACTUATOR - A safety valve is positioned in supply plumbing that supplies a fluid medium such as natural gas to a point of use structure such as a home. A mechanical actuator is provided remote from the safety valve but mechanically connected to the safety valve. This allows the actuator to be positioned, for example, directly on the point of use structure, avoiding the need for separate bracing for the valve. The valve can be provided with a tee fitting or can be a separate gate valve. The mechanical actuator can be actuated by seismic disturbance, manually, or by activation by remote sensor or home security system. | 2011-04-21 |
20110089354 | GATE VALVE - Between a driving base operated by an air cylinder and a lever member fixed to a valve shaft integral with a valve plate, a connecting mechanism for connecting the driving base and a lever member, capable of displacement, and a cam mechanism for tilting the lever member are interposed, and a stopper mechanism for stopping the lever member at an opposing position of the valve plate or a full-open position, and after the lever member is stopped by the stopper mechanism at the opposing position or the full-open position, the lever member is tilted by the cam mechanism so as to incline the valve plate and to press a valve seal to a valve seat portion or a wall face in the periphery of an opening. | 2011-04-21 |
20110089355 | SANITARY FITTING WITH A DISPLACEABLY MOUNTED ACTUATING LEVER - The present invention relates to a sanitary fitting ( | 2011-04-21 |
20110089356 | Locking Y-Valve - A locking Y-valve has branches that can be independently locked open or locked closed. Each branch has a ball valve connected to a rotating valve column. The valve column extends through a lock plate and attaches to a housing that contains a locking mechanism. The locking mechanism has a retractable lock pin that cooperates with two recesses in the lock plate to keep the housing, valve column, and ball valve locked in place. The locking mechanism is attached to a rotatable handle outside the housing. Rotating the handle retracts the lock pin from a recess so that the handle can be moved. Releasing the handle extends the lock pin into a recess, securing the handle in place. One or more of the lock plate and housing may be integral with the Y-valve. In the preferred embodiment, the lock plate is configured to be retrofit onto existing Y-valves, so that a non-lockable Y-valve may be converted into a lockable Y-valve. | 2011-04-21 |
20110089357 | Diverter Valve - A diverter valve may include a body portion and a lid portion. The lid and body portions may define a fluid chamber. The lid portion may include a first stop and a second stop. A closure member may at least partially be received within the fluid chamber. A movable member, such as a handle, may be operatively associated with closure member. The movable member may be selectively movable relative to the lid portion between the first and second stops. A stop member may be selectively positioned on the lid portion. When positioned between the first and second stops, the stop member may limit movement of the movable member to between the stop member and one of the first and second stops. The first stop, the second stop, or both, may also comprise a stop member. | 2011-04-21 |
20110089358 | VALVE WITH ACTUATION SUB-ASSEMBLY - A valve assembly includes a valve body with an inlet, an outlet, and a chamber extending between the inlet and the outlet and an actuation sub-assembly. Positioned in the chamber is a flow restrictor, which is positionable between a valve open position wherein the fluid communication between the inlet and outlet is open and a valve closed position wherein the fluid communication between the inlet and the outlet is closed. A slow-close actuation sub-assembly includes a stem for engaging the flow restrictor, and includes a handle and plurality of annular members disposed around a shaft for resisting rotation of the shaft via the handle. | 2011-04-21 |
20110089359 | SPRING RETAINING SLEEVE - The invention relates to a spring retaining sleeve having a cylinder press-fit connection surface which has a press-fit diameter and a press-fit length. To enable cost-effective production of a stable press-fit assembly, at least one end of the cylinder press-fit connection surface, an optimized insertion chamfer for long press-fit assemblies is provided with a ratio of press-fit diameter to press-fit length of greater than thirty five percent. | 2011-04-21 |
20110089360 | FLOW CONTROL VALVE AND METHOD FOR MANUFACTURING THE SAME - A flow control valve in which corrosion is less likely to occur in the vicinity of a radial step portion in a gas passage of a housing and a method for manufacturing the same are provided. A flow control valve includes: a housing formed with a gas passage including a first cylinder member accommodating portion, a second cylinder member accommodating portion, and a radial step portion; a first cylinder member accommodated in the first cylinder member accommodating portion; a second cylinder member accommodated in the second cylinder member accommodating portion; and a valve body that is rotatably arranged inside the first cylinder member and the second cylinder member in the radial direction. The housing is formed of cast iron. At least surfaces of the first cylinder member and the second cylinder member are formed of a highly corrosion resistant material. At least one of a first axial end surface and a second axial end surface includes an opposing portion that opposes the radial step portion in the axial direction. A gas seal structure is arranged between the opposing portion and the radial step portion. | 2011-04-21 |
20110089361 | VALVE HOUSING BLANK AND VALVE ASSEMBLY - A valve housing blank comprises a receiving space for a valve insert having a longitudinal axis. At least two first pairs of supply ducts, which are opposite to each other with respect to the longitudinal axis, extend laterally from an outer side of the blank towards the receiving space. The pairs of supply ducts, as seen in the direction of the longitudinal axis, are arranged so as to be offset relative to each other. Only one of the supply ducts is open towards the receiving space. The other supply ducts are closed off from the receiving space by a destroyable dividing wall. | 2011-04-21 |
20110089362 | FLUORINATED AMPHOTERIC SURFACTANTS - A compound of Formula (I): | 2011-04-21 |
20110089363 | THERMAL INSULATION AND METHOD OF PRODUCING THE SAME - Provided is a thermal insulation having both excellent thermal insulating performance and excellent strength, and a method of producing the same. A method of producing a thermal insulation according to the present invention includes curing (S | 2011-04-21 |
20110089364 | PROCESSES FOR REMOVING COLOR DURING PRODUCTION OF RUNWAY DEICER - A method of removing color bodies from a fermentation broth includes precipitating a color-forming impurity (color body) by adjusting the fermentation broth to a pH greater than about 13; filtering our precipitated color-forming impurities from the broth; and bleaching a second color impurity by treating the broth with an oxidizing agent. | 2011-04-21 |
20110089365 | CARBON NANOFIBER, PRODUCTION PROCESS AND USE - The invention relates to a carbon nanofiber containing at least iron (Fe) and vanadium (V), wherein the iron (Fe) is present in an amount of 6 mass % or less and the vanadium (V) is present in an amount of 3 mass % or less as a metal element other than carbon, wherein a graphite plane is inclined to the fiber axis. | 2011-04-21 |
20110089366 | HYDROFLUOROOLEFIN COMPOSITIONS - The present invention relates to compositions containing hydrofluoroolefins and to the uses thereof as heat transfer fluids, blowing agents, solvents and aerosols. More particularly, the invention relates to compositions having: 10 to 90% by weight, of 2,3,3,3-tetrafluoropropene, 5 to 85% by weight of HFC-134a and 2 to 20% by weight of HFC-152a. | 2011-04-21 |
20110089367 | PRECURSOR FOR PREPARATION OF LITHIUM TRANSITION METAL OXIDE - Provided is a precursor for the preparation of a lithium transition metal oxide that is used for the preparation of a lithium transition metal oxide as a cathode active material for a lithium secondary battery, through a reaction with a lithium-containing compound, wherein the precursor contains two or more transition metals, and sulfate ion (SO | 2011-04-21 |
20110089368 | Composite Positive Active Material of Lithium Battery and Method for Manufacturing the Same - The composite positive active material of a lithium battery is composed of a main active material containing lithium and a sheathing active material containing lithium, whose particle diameter is far smaller than that of the main active material. A pulp containing these two active materials is sprayed and dried to form a mixed powder. The composite positive active material is obtained by means of sintering the mixed powder. | 2011-04-21 |
20110089369 | POSITIVE ELECTRODE MATERIAL FORMED BY A LAMELLAR-TYPE OXIDE FOR A LITHIUM BATTERY - A lamellar-type oxide, in particular used as active material of a positive electrode for a lithium battery and to a method for synthesizing such an oxide. The oxides are used as active materials for the positive electrode of a lithium battery. With such oxides, the specific capacity of a lithium battery is improved and stabilized on cycling. | 2011-04-21 |
20110089370 | Lipophilic Preparations - Disclosed are novel lipophilic preparations comprising (a) from 20 to 40% by weight of myristic acid or esters thereof, (b) from 20 to 40% by weight of palmitic acid or esters thereof, (c) from 0.1 to 5% by weight of aliphatic and/or cycloaliphatic hydrocarbons and (d) less than 20% by weight of carboxylic acids or esters thereof having 12 and fewer carbons in the acyl moiety and (e) less than 20% by weight of carboxylic acids or esters thereof having 16 and more carbons in the acyl moiety, with the proviso that all percentages add up to 100% by weight. | 2011-04-21 |
20110089371 | LIQUID CRYSTAL POLYESTER RESIN COMPOSITION FOR CAMERA MODULE - A resin composition for surface-mountable (SMT) camera modules which is excellent in the balance between heat resistance, rigidity, strength or moldability and surface exfoliation characteristics is provided by using a liquid-crystal polyester resin composition which comprises 100 parts by mass of a liquid-crystal polyester, 15 to 60 parts by mass of talc having a number-mean particle diameter of 10 to 50 μm, 25 to 50 parts by mass of glass fiber having a number-mean fiber length of 100 to 200 μm, 6 to 20 parts by mass of titanium oxide, and 2 to 10 parts by mass of carbon black and which exhibits a melt viscosity of 10 to 100 Pa S as determined at a shear rate of 100 sec | 2011-04-21 |
20110089372 | OPTICALLY ANISOTROPIC MATERIAL, OPTICAL ELEMENT AND OPTICAL INFORMATION WRITING/READING DEVICE - An optically anisotropic material having a good durability against light is provided. Further, an optical element having a good durability against light and an optical information writing/reading device employing such an element are provided. | 2011-04-21 |
20110089373 | Liquid Crystal Composition and Liquid Crystal Display Device - The subject is to provide a liquid crystal composition that satisfies at least one of characteristics such as a high maximum temperature of a nematic phase, a low minimum temperature of a nematic phase, a small viscosity, a large optical anisotropy, a negatively large dielectric anisotropy, a large specific resistance, a high stability to ultraviolet light and a high stability to heat, or that is suitably balanced regarding at least two of the characteristics. The subject is to provide a AM device that has a short response time, a large voltage holding ratio, a large contrast ratio, a long service life and so forth. | 2011-04-21 |
20110089374 | Liquid Crystals Comprising Cyclopentane Groups - Provided are liquid crystal compounds and mixtures incorporating the same. The liquid crystal compounds of the invention generally comprise a cyclopentane group and at least two other rings. In one embodiment, the liquid crystal compounds of the invention comprise a cyclopentane group and at least two other rings, one of which is a fused ring system. | 2011-04-21 |
20110089375 | MICROSPHERES INCLUDING NANOPARTICLES - A microparticle can include a central region and a peripheral region. The peripheral region can include a nanoparticle, such as a metal nanoparticle, a metal oxide nanoparticle, or a semiconductor nanocrystal. The microparticle can be a member of a monodisperse population of particles. | 2011-04-21 |
20110089376 | DISPERSANT HAVING MULTIFUNCTIONAL HEAD AND PHOSPHOR PASTE COMPOSITION COMPRISING THE SAME - Disclosed is a dispersant having a multifunctional head, and a phosphor paste composition comprising the dispersant. The dispersant has a multifunctional head that comprises an acidic group, a basic group and an aromatic group, thereby enhancing an affinity for the surface of phosphor particles and improving dispersibility. | 2011-04-21 |
20110089377 | MOLTEN METAL REACTOR AND METHOD OF FORMING HYDROGEN, CARBON MONOXIDE AND CARBON DIOXIDE USING THE MOLTEN ALKALINE METAL REACTOR - A molten metal reactor for converting a carbon material and steam into a gas comprising hydrogen, carbon monoxide, and carbon dioxide is disclosed. The reactor includes an interior crucible having a portion contained within an exterior crucible. The interior crucible includes an inlet and an outlet; the outlet leads to the exterior crucible and may comprise a diffuser. The exterior crucible may contain a molten alkaline metal compound. Contained between the exterior crucible and the interior crucible is at least one baffle. | 2011-04-21 |
20110089378 | CARBON DIOXIDE REFORMING PROCESS - A synthetic gas containing hydrogen and carbon monoxide is efficiently obtained by reacting a hydrocarbon feedstock gas with carbon dioxide under pressure, while suppressing carbon deposition. The pressure is preferably 3 atmospheres (0.304 MPa), and used is a carbon dioxide reforming catalyst that contains at least one alkaline earth metal carbonate a catalytic metal promoting the decomposition reaction of a hydrocarbon feedstock gas, at least one alkaline earth metal selected from the group consisting of Ca, Sr, and Ba, and a complex oxide containing at least one component selected from the group consisting of Ti, Al, Zr, Fe, W, and Mo, such as ATiO | 2011-04-21 |
20110089379 | Development Of Phopholipid-Capped Gold Nanoparticles (PLGNPs) As Surface Enhanced Raman Scattering Probes - The molecule is prepared by capping phospholipid on a single gold nanoparticle (GNP). Since the thiol-related molecule bounded on GNP shows the characteristic of surface-enhanced Raman scattering (SERS), the phospholipid-capped gold nanoparticle (PLGNP) can be formed as a nanoprobe applied on the detection device integrating optics and chemistry and used in the fields of biomedicine, medical diagnosis and environment for detecting, such as solutions containing salts or proteins. | 2011-04-21 |
20110089380 | Fullerene Multi-Adduct Compositions - One aspect of the invention relates to compositions comprising one or more fullerene derivatives that comprise one or more covalent addends. In certain embodiments, the fullerene derivatives are selected from the group consisting of methanofullerene derivatives, Prato adduct fullerene derivatives, Diels-Alder fullerene derivatives, diazoline fullerene derivatives, Bingel fullerene derivatives, ketolactam fullerene derivatives, and azafulleroid fullerene derivatives. In certain embodiments, the fullerenes are C60 or C70 or a mixture thereof. The invention also relates to semiconductors, photodiodes, solar cells, photodectectors, and transistors comprising one or more fullerene derivatives that comprise one or more covalent addends. | 2011-04-21 |
20110089381 | LEAD-FREE RESISTIVE COMPOSITION - A substantially lead-free thick-film resistor paste composition is disclosed including a resistor composition dispersed in an organic vehicle. The resistor composition includes (a) RuO | 2011-04-21 |
20110089382 | METHODS AND SYSTEMS FOR MONITORING AND CONTROLLING SURFACTANT CONCENTRATION IN LIQUID CRYSTAL COLLOIDAL DISPERSIONS - There are provided methods and systems for precisely controlling the surfactant concentration and character of ferroelectric nanoparticles in a ferroelectric liquid crystal dispersion. In an aspect, the invention provides an efficient FTIR technique to characterize the status and measure the distribution of the surfactant in ferroelectric particle dispersion. This allows for establishing a reproducible fabrication process for ferroelectric nanoparticle liquid crystal dispersions. The methods also maintain the nanoparticles ferroelectricity, which is provided by the addition of surfactant during a comminution process. The invention therefore optimizes both the milling time (to achieve small particle size and narrow size distribution) and surfactant concentration (to maintain the ferroelectricity during milling). | 2011-04-21 |
20110089383 | Azo Compound And Dye Polarizing Film Containing The Same - Disclosed is an azo compound represented by the formula (1) below, a salt thereof, or a copper complex salt compound thereof. | 2011-04-21 |
20110089384 | HIGHLY COMPATIBLE AND NON-MIGRATORY POLYMERIC UV-ABSORBER - The present invention relates to highly compatible hydroxyphenyltriazine UV-absorbers and to their use in organic polymers, especially for protecting the contents of transparent plastic packages such as pharmaceuticals, cosmetics, personal care products, shampoos and the like, and especially foodstuffs such as beverages, fresh vegetables or meat, from the deleterious effects of ultraviolet radiation. Especially advantageous is the combined use of a UV absorber and an oxygen scavenger. It has been found that certain highly compatible tris-aryl-s-triazines are especially effective towards this end when incorporated in the containers or films in which such materials are stored. | 2011-04-21 |
20110089385 | COMPOSITION FOR OPTICAL MATERIALS - The composition for optical materials includes a polymer obtained from silsesquioxanes which are represented by average composition formula (1): (R | 2011-04-21 |
20110089386 | Phase change materials with improved fire-retardant properties - The present invention provides latent heat storage materials having enhanced fire-retardant properties. These include compositions of magnesia cement and a phase change material in which the magnesia cement is formed from magnesium oxide, magnesium chloride, and water. The molar ratio of magnesium chloride to water may be in the range of about 1:17 to 1:32. The magnesium chloride may be dissolved in the water to give a solution having a Baumé in the range between 15° and 26°. The molar ratio of magnesium chloride to magnesium oxide may be in the range of about 1:1 to about 1:5, and the latent heat storage material may additionally comprises fillers, and/or intumescent agents. The phase change material may be a microencapsulated formulation. A process for making these compositions is disclosed. | 2011-04-21 |
20110089387 | Phase change materials with improved fire-retardant properties - The present invention provides latent heat storage materials having enhanced fire-retardant properties. These include compositions a phase change material and a binder, the binder including dry inert powder, phosphogypsum, and an alkaline salt of any metal. The latent heat storage material may additionally comprise magnesia cement including magnesium oxide, magnesium chloride, and water. The latent heat storage material may additionally comprises fillers, and/or intumescent agents. The phase change material may be a microencapsulated formulation. A process for making these compositions is disclosed. | 2011-04-21 |
20110089388 | METHOD OF CONTROLLING ROTATION SPEED OF MOTOR OF SPEED-CONTROLLABLE HOIST DRIVE, AND HOIST DRIVE - A method according to the invention of controlling a rotation speed of a motor of a speed-controllable hoist drive comprises receiving a lift speed instruction; forming a final speed instruction by using initial information containing the lift speed instruction; and using the final speed instruction as a speed instruction for the rotation speed of the motor of the speed-controllable hoist drive. The method further comprises monitoring a position derivative of an actual value of a cable force. The initial information for forming the final speed instruction comprises the position derivative of the actual value of the cable force. | 2011-04-21 |
20110089389 | LAWN MOWER LIFT - A lifting apparatus for a small vehicle which includes a two-wheeled base frame assembly. A support frame assembly is for retaining the small vehicle thereon. The support frame assembly is pivotally mounted at a rear end to a rear end of the base frame assembly. A hydraulic lift assembly is positioned between the base frame assembly and the support frame assembly. When the hydraulic lift assembly is manually activated, the support frame assembly will be raised at an angle upwardly from the base frame assembly, to allow a person to perform maintenance and repairs to the underside of the small vehicle. | 2011-04-21 |
20110089390 | POST MOUNT FOR LIGHTED HANDRAIL ASSEMBLY - Provided is a post assembly configured for use with a lighted handrail, wherein the post assembly includes a post body sized to house a driver or other operational components associated with the lighting components disposed within the lighted handrail. In this regard, such components may be disposed in relatively close proximity to the lighted handrail, making the overall assembly safer, more energy efficient. Furthermore, by disposing the components within the post body, such components may be more easily accessed for routine maintenance and repair. | 2011-04-21 |
20110089391 | PUNCH-THROUGH DIODE STEERING ELEMENT - A storage system and method for forming a storage system that uses punch-through diodes as a steering element in series with a reversible resistivity-switching element is described. The punch-through diode allows bipolar operation of a cross-point memory array. The punch-through diode may have a symmetrical non-linear current/voltage relationship. The punch-through diode has a high current at high bias for selected cells and a low leakage current at low bias for unselected cells. Therefore, it is compatible with bipolar switching in cross-point memory arrays having resistive switching elements. The punch-through diode may be a N+/P−/N+ device or a P+/N−/P+ device. | 2011-04-21 |
20110089392 | MEMORY USING TUNNELING FIELD EFFECT TRANSISTORS - A memory includes a first tunneling field effect transistor including a first drain and a first source, the first drain coupled to a first resistive memory element. The memory includes a second tunneling field effect transistor including a second drain and sharing the first source, the second drain coupled to a second resistive memory element. The memory includes a first region coupled to the first source for providing a source node. | 2011-04-21 |
20110089393 | Memory and Method of Fabricating the Same - A memory, comprising a metal portion, a first metal layer and second metal oxide layer is provided. The first metal oxide layer is on the metal element, and the first metal oxide layer includes N resistance levels. The second metal oxide layer is on the first metal oxide layer, and the second metal oxide layer includes M resistance levels. The memory has X resistance levels and X is less than the summation of M and N, for minimizing a programming disturbance. | 2011-04-21 |
20110089394 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first insulating film over a semiconductor substrate. The first insulating film includes a first opening, a first electrode in the first opening, and a second insulating film over the first insulating film. The second insulating film includes a second opening that is positioned over the first electrode. The second opening includes a first conductive film. The first conductive film is electrically coupled to the first electrode. The first conductive film includes a top surface that is lower than a top surface of the second opening. The second opening includes a phase change material film. The phase change material film includes first and second portions. The first portion is surrounded by the first electrode and the first conductive film. | 2011-04-21 |
20110089395 | STRUCTURE AND MANUFACTURING METHOD OF SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device having a cross point structure includes a plurality of upper electrodes arranged to extend in one direction, and a plurality of lower electrodes arranged to extend in another direction at a right angle to the one direction of the upper electrodes. Memory materials are provided between the upper electrodes and the lower electrodes for storage of data. The memory materials are made of a perovskite material and arranged at the lower electrodes side of the corresponding upper electrode extending along the corresponding upper electrode. | 2011-04-21 |
20110089396 | FIELD EMISSION ARRAY HAVING CARBON MICROSTRUCTURE AND METHOD OF MANUFACTURING THE SAME - Provided is a method for manufacturing a field emission array with a carbon microstructure. The method includes: a photomask attachment step of attaching a photomask with a pattern groove to one surface of a transparent substrate; a photoresist attachment step of attaching a negative photoresist to one surface of the photomask; an exposure step of irradiating light toward the opposite surface of the transparent substrate from the photomask to cure a portion of the negative photoresist with the light irradiated on the negative photoresist through the pattern groove; a developing step of removing an uncured portion of the negative photoresist while leaving the cured portion of the negative photoresist as a microstructure; a pyrolysis step of heating and carbonizing the microstructure thus obtained; and a cathode attachment step of attaching a voltage-supplying cathode to the surface of the transparent substrate on which the microstructure is formed. | 2011-04-21 |
20110089397 | SPIN-POLARIZED ELECTRON SOURCE - To provide implement a spin-polarized electron generating device having high spin polarization and high external quantum efficiency while allowing a certain degree of freedom in selecting materials of a substrate, a buffer layer, and a strained superlattice layer. | 2011-04-21 |
20110089398 | Method for improving internal quantum efficiency of Group-III nitride-based light emitting device - A method for improving internal quantum efficiency of a group-III nitride-based light emitting device is disclosed. The method includes the steps of: providing a group-III nitride-based substrate having a single crystalline structure; forming on the group-III nitride-based substrate an oxide layer, having a plurality of particles, without absorption of visible light, size, shape, and density of the particles are controlled by reaction concentration ratio of nitrogen/hydrogen, reaction time and reaction temperature; and growing a group-III nitride-based layer over the oxide layer; wherein the oxide layer prevents threading dislocation of the group-III nitride-based substrate from propagating into the group-III nitride-based layer, thereby improving internal quantum efficiency of the group-III nitride-based light emitting device. | 2011-04-21 |
20110089399 | LIGHT EMITTING DEVICE WITH A STAIR QUANTUM WELL STRUCTURE - A light emitting device with a stair quantum well structure in an active region. The stair quantum well structure may include a primary well and a single step or multiple steps. The light emitting device may be a nonpolar, semipolar or polar (Al,Ga,In)N based light emitting device. The stair quantum structure improves the radiative efficiency of the light emitting device. | 2011-04-21 |
20110089400 | NANOWIRE WRAP GATE DEVICES - The present invention provides a semiconductor device comprising at least a first semiconductor nanowire ( | 2011-04-21 |
20110089401 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT, ELECTRODE AND MANUFACTURING METHOD FOR THE ELEMENT, AND LAMP - A semiconductor light-emitting element including a substrate, a laminated semiconductor layer including a light-emitting layer formed over the substrate, one electrode ( | 2011-04-21 |
20110089402 | Composite Nanorod-Based Structures for Generating Electricity - One aspect of the invention involves an article of manufacture that includes a dielectric layer with an array of pores, and an array of nanowires at least partially contained within the array of pores. A respective nanowire in the array of nanowires is formed within a respective pore in the array of pores. Nanowires in the array of nanowires include a core semiconducting region with a first type of, a shell semiconducting region with a second type of doping, and a junction region between the core semiconducting region and the shell semiconducting. Additionally, the article of manufacture includes a first conducting layer electrically coupled to a plurality of shell semiconducting regions for a plurality of nanowires in the array of nanowires, as well as a second conducting layer electrically coupled to a plurality of core semiconducting regions for a plurality of nanowires in the array of nanowires. | 2011-04-21 |
20110089403 | Electronic device using a two-dimensional sheet material, transparent display and methods of fabricating the same - An electronic device, a transparent display and methods for fabricating the same are provided, the electronic device including a first, a second and a third element each formed of a two-dimensional (2D) sheet material. The first, second, and third elements are stacked in a sequential order or in a reverse order. The second element is positioned between the first element and the third element. The second element has an insulator property, the first and third elements have a metal property or a semiconductor property. | 2011-04-21 |
20110089404 | Microfabrication of Carbon-based Devices Such as Gate-Controlled Graphene Devices - A graphene device includes a graphene layer and a back gate electrode connected to apply a global electrical bias to the graphene from a first surface of the graphene. At least two graphene device electrodes are each connected to a corresponding and distinct region of the graphene at a second graphene surface. A dielectric layer blanket-coats the second graphene surface and the device electrodes. At least one top gate electrode is disposed on the dielectric layer and extends over a distinct one of the device electrodes and at least a portion of a corresponding graphene region. Each top gate electrode is connected to apply an electrical charge carrier bias to the graphene region over which that top gate electrode extends to produce a selected charge carrier type in that graphene region. Such a carbon structure can be exposed to a beam of electrons to compensate for extrinsic doping of the carbon. | 2011-04-21 |
20110089405 | SYSTEMS AND METHODS FOR FABRICATION OF SUPERCONDUCTING INTEGRATED CIRCUITS - Various techniques and apparatus permit fabrication of superconductive circuits and structures, for instance Josephson junctions, which may, for example be useful in quantum computers. For instance, a low magnetic flux noise trilayer structure may be fabricated having a dielectric structure or layer interposed between two elements or layers capable of superconducting. A superconducting via may directly overlie a Josephson junction. A structure, for instance a Josephson junction, may be carried on a planarized dielectric layer. A fin may be employed to remove heat from the structure. A via capable of superconducting may have a width that is less than about 1 micrometer. The structure may be coupled to a resistor, for example by vias and/or a strap connector. | 2011-04-21 |
20110089406 | MULTILAYER HETEROSTRUCTURES FOR APPLICATION IN OLEDS AND PHOTOVOLTAIC DEVICES - This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes. | 2011-04-21 |
20110089407 | ELECTROLUMINISCENT METAL COMPLEXES WITH DIBENZO[F,H] QUINOXALINES - This invention relates to electroluminescent metal complexes of the formula (I), or (II), a process for their preparation, electronic devices comprising the metal complexes and their use in electronic devices, especially organic light emitting diodes (OLEDs), as oxygen sensitive indicators, as phosphorescent indicators in bioassays, and as catalysts. | 2011-04-21 |
20110089408 | Organic Electronic Device and Dopant for Doping an Organic Semiconducting Matrix Material - An organic electronic device includes a substrate, a first electrode arranged on the substrate, at least a first functional organic layer arranged on the first electrode and a second electrode arranged on the first functional organic layer. The first functional organic layer includes a matrix material and a p-dopant with regard to the matrix material, wherein the p-dopant includes a copper complex containing at least one ligand. | 2011-04-21 |
20110089409 | Alternating copolymers of phenylene vinylene and biarylene vinylene, preparation method thereof, and organic thin film transistor comprising the same - Disclosed herein are an alternating copolymer of phenylene vinylene and biarylene vinylene, a preparation method thereof, and an organic thin film transistor including the same. The organic thin film transistor maintains low off-state leakage current and realizes a high on/off current ratio and high charge mobility because the organic active layer thereof is formed of an alternating copolymer of phenylene vinylene and biarylene vinylene. | 2011-04-21 |
20110089410 | Electronic Device Comprising Metal Complexes - The present invention relates to organic electroluminescent devices comprising metal complexes according to the formula (1) and metal complexes for use in organic electroluminescent devices. | 2011-04-21 |
20110089411 | CROSS LINKABLE IONIC COMPOUNDS - Ionic compounds comprising: (a) a cationic radical of a charge transporting compound which has one or more reactive groups; and (b) a counter anion. The reactive functional groups on the cation allow the ionic compound to cross-link with a host charge transport compound. Such ionic compounds may have various properties, such as thermodynamic stability, hole injection/transport capabilities, electrochemical durability, and/or solubility in organic solvents that allows them to be useful in organic electronic devices. Also provided are electronic devices made using the ionic compounds of the present invention, and methods of making an electronic device. | 2011-04-21 |
20110089412 | PATTERNING METHOD, PRODUCTION METHOD OF DEVICE USING THE PATTERNING METHOD, AND DEVICE - Provided is a patterning method, wherein a donor substrate, in which a light-to-heat conversion layer and a division pattern are formed on a substrate and a transferring material exists within said division pattern, is opposed to a device substrate and said transferring material is transferred on the device substrate by irradiating the light-to-heat conversion layer with light so that at least a part of said transferring material and at least apart of said division pattern are simultaneously heated. The patterning method enables large size and highly accurate fine patterning without degrading characteristics of thin films such as organic EL materials. | 2011-04-21 |
20110089413 | HIGH-PERFORMANCE DIODE DEVICE STRUCTURE AND MATERIALS USED FOR THE SAME - A diode and memory device including the diode, where the diode includes a conductive portion and another portion formed of a first material that has characteristics allowing a first decrease in a resistivity of the material upon application of a voltage to the material, thereby allowing current to flow there through, and has further characteristics allowing a second decrease in the resistivity of the first material in response to an increase in temperature of the first material. | 2011-04-21 |
20110089414 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized. | 2011-04-21 |
20110089415 | EPITAXIAL GROWTH OF SINGLE CRYSTALLINE MGO ON GERMANIUM - The embodiments disclosed herein relate to growth of magnesium-oxide on a single crystalline substrate of germanium. The embodiments further describes a method of manufacturing and crystalline structure of a FM/MgO/Ge(001) heterostructure. The embodiments further related to method of manufacturing and a crystalline structure for a high-k dielectric//MgO [100](001)//Ge[110](001) heterostructure. | 2011-04-21 |
20110089416 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. An impurity such as hydrogen or moisture (e.g., a hydrogen atom or a compound containing a hydrogen atom such as H | 2011-04-21 |
20110089417 | SEMICONDUCTOR DEVICE - An objet of the present invention is to provide a semiconductor device with a new structure. Disclosed is a semiconductor device including a first transistor which includes a channel formation region on a substrate containing a semiconductor material, impurity regions formed with the channel formation region interposed therebetween, a first gate insulating layer over the channel formation region, a first gate electrode over the first gate insulating layer, and a first source electrode and a first drain electrode which are electrically connected to the impurity region; and a second transistor which includes a second gate electrode over the substrate containing a semiconductor material, a second gate insulating layer over the second gate electrode, an oxide semiconductor layer over the second gate insulating layer, and a second source electrode and a second drain electrode which are electrically connected to the oxide semiconductor layer. | 2011-04-21 |
20110089418 | ZINC OXIDE BASED COMPOUND SEMICONDUCTOR DEVICE - In a ZnO based compound semiconductor device, nitrogen (N) doped (Mg)ZnO:N layer is inserted as a diffusion barrier layer 9 between a ZnO based n-type layer 3 to which n-type dopants are doped and an active layer 4 or a p-type layer 5. The diffusion barrier layer 9 prevents diffusion of the n-type dopants to the active layer 4 or the p-type layer 5. Crystalline quality of the active layer 4 of the ZnO based compound semiconductor device is not deteriorated by the diffusion of the n-type dopants. | 2011-04-21 |
20110089419 | SEMICONDUCTOR DEVICE - An object is to provide a memory device including a memory element that can be operated without problems by a thin film transistor with a low off-state current. Provided is a memory device in which a memory element including at least one thin film transistor that includes an oxide semiconductor layer is arranged as a matrix. The thin film transistor including an oxide semiconductor layer has a high field effect mobility and low off-state current, and thus can be operated favorably without problems. In addition, the power consumption can be reduced. Such a memory device is particularly effective in the case where the thin film transistor including an oxide semiconductor layer is provided in a pixel of a display device because the memory device and the pixel can be formed over one substrate. | 2011-04-21 |
20110089420 | BACKSIDE ONLY CONTACT THIN-FILM SOLAR CELLS AND DEVICES, SYSTEMS AND METHODS OF FABRICATING SAME, AND PRODUCTS PRODUCED BY PROCESSES THEREOF - Systems, methods, devices, and products of processes consistent with the innovations herein relate to thin-film solar cells having contacts on the backside, only. In one exemplary implementation, there is provided a thin film device. Moreover, such device may comprise a substrate, and a layer of silicon or silicon-containing material positioned on a first side of the substrate, wherein the layer comprises a n-doped region and a p-doped region. In some exemplary implementations, the device may be fabricated such that the n-doped region and the p-doped region are formed on the backside surface of the layer to create an electrical structure characterized by a P-type anode and an N-type cathode forming a junction positioned along the backside surface of the layer. | 2011-04-21 |
20110089421 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor array panel includes: a substrate; a signal line disposed on the substrate and including copper (Cu); a passivation layer disposed on the signal line and having a contact hole exposing a portion of the signal line; and a conductive layer disposed on the passivation layer and connected to the portion of the signal line through the contact hole, wherein the passivation layer includes an organic passivation layer including an organic insulator that does not include sulfur, and a method of manufacturing the thin film transistor prevents formation of foreign particles on the signal line. | 2011-04-21 |
20110089422 | THIN FILM TRANSISTOR ARRAY PANEL - A thin film transistor (TFT) array panel includes: first and second pixel electrodes neighboring each other; a data line extending between the first and the second pixel electrodes; first and second gate lines extending perpendicularly to the data line; a first TFT including a first gate electrode connected to the first gate line, a first source electrode connected to the data line, and a first drain electrode facing the first source electrode and connected to the first pixel electrode; and a second TFT including a second gate electrode connected to the second gate line, a second source electrode connected to the data line, and a second drain electrode facing the second source electrode and connected to the second pixel electrode. The first source electrode has the same relative position with respect to the first drain electrode as the second source electrode with respect to the second drain electrode. | 2011-04-21 |
20110089423 | THIN FILM TRANSISTOR ARRAY PANEL - A thin film transistor array panel can include: a substrate; a gate line formed on the substrate; a gate pad formed at an end of the gate line; a gate identification member corresponding to the gate pad and formed in the same layer as the gate pad; a gate insulating layer covering the gate line and the gate identification member; a data line formed on the gate insulating layer; a passivation layer formed on the gate insulating layer and the data line; a gate contact assistant formed on the passivation layer; and a gate driving chip electrically connected to the gate contact assistant, wherein the gate contact assistant at least partially overlaps the gate identification member. The gate identification member is formed without producing a step in the gate contact assistant, reducing the risk of defects when wires or other objects are pressed onto the gate pad. | 2011-04-21 |
20110089424 | DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME - A display substrate includes a pixel electrode, an m-th data line (‘m’ is a natural number), a floating electrode, a (m+1)-th data line and a storage electrode. The pixel electrode is disposed in a pixel area of the substrate. The m-th data line is disposed at a first side of the pixel electrode and electrically connected to the pixel electrode. The floating electrode partially overlaps with the m-th data line. The (m+1)-th data line is disposed at a second side of the pixel electrode. The storage electrode is spaced apart from the (m+1)-th data line. | 2011-04-21 |
20110089425 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing an insulating film, which is used as an insulating film used for a semiconductor integrated circuit, whose reliability can be ensured even though it has small thickness, is provided. In particular, a method for manufacturing a high-quality insulating film over a substrate having an insulating surface, which can be enlarged, at low substrate temperature, is provided. A monosilane gas (SiH | 2011-04-21 |
20110089426 | Integrated Circuit, Semiconductor Device Comprising the Same, Electronic Device Having the Same, and Driving Method of the Same - An integrated circuit mounting a DRAM which can realize high integration without complicated manufacturing steps. The integrated circuit according to the invention comprises a DRAM in which a plurality of memory cells each having a thin film transistor are disposed. The thin film transistor comprises an active layer including a channel forming region, and first and second electrodes overlapping with each other with the channel forming region interposed therebetween. By controlling a drain voltage of the thin film transistor according to data, it is determined whether to accumulate holes in the channel forming region or not, and data is read out by confirming whether or not holes are accumulated. | 2011-04-21 |
20110089427 | SECURITIES, CHIP MOUNTING PRODUCT, AND MANUFACTURING METHOD THEREOF - The invention provides an ID chip with reduced cost, increased impact resistance and attractive design, as well as products and the like mounting the ID chip and a manufacturing method thereof. In view of the foregoing, an integrated circuit having a semiconductor film with a thickness of 0.2 μm or less is mounted on securities including bills, belongings, containers of food and drink, and the like (hereinafter referred to as products and the like). The ID chip of the invention can be reduced in cost and increased in impact resistance as compared with a chip formed over a silicon wafer while maintaining an attractive design. | 2011-04-21 |
20110089428 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device having high operating performance and reliability, and a manufacturing method thereof are provided. | 2011-04-21 |
20110089429 | SYSTEMS, METHODS AND MATERIALS INVOLVING CRYSTALLIZATION OF SUBSTRATES USING A SEED LAYER, AS WELL AS PRODUCTS PRODUCED BY SUCH PROCESSES - Systems, methods, and products of processes consistent with the innovations herein relate to aspects involving crystallization of layers on substrates. In one exemplary implementation, there is provided a method of fabricating a device. Moreover, such method may include placing a seed layer on a base substrate, covering the seed layer with an amorphous/poly material, and heating the seed layer/material to transform the material into crystalline form. | 2011-04-21 |
20110089430 | Compound semiconductor device and method for fabricating the same - The compound semiconductor device comprises an i-GaN buffer layer | 2011-04-21 |
20110089431 | COMPOUND SINGLE CRYSTAL AND METHOD FOR PRODUCING THE SAME - A method for producing a compound single crystal includes a process (I) of growing the compound single crystal while causing an anti-phase boundary and a stacking fault to equivalently occur in a <110> direction parallel to the surface, the stacking fault being attributable to the elements A and B; a process (II) of merging and annihilating the stacking fault, attributable to the element A, and the anti-phase boundary, which occurs in the process (I); a process (III) of vanishing the stacking fault attributable to the element B, which occurs in the process (I); and a process (IV) of completely merging and annihilating the anti-phase boundary. The process (IV) is carried out simultaneously with the processes (II) and (III) or after the processes (II) and (III). | 2011-04-21 |
20110089432 | WIDE BANDGAP DEVICE IN PARALLEL WITH A DEVICE THAT HAS A LOWER AVALANCHE BREAKDOWN VOLTAGE AND A HIGHER FORWARD VOLTAGE DROP THAN THE WIDE BANDGAP DEVICE - An electrical device on a single semiconductor substrate includes: an open base vertical PNP transistor placed in parallel with a wide bandgap, high voltage diode wherein the PNP transistor has a P doped collector region, an N-doped base layer, an N doped buffer layer, and a P doped emitter layer. | 2011-04-21 |
20110089433 | METHOD FOR MANUFACTURING NITROGEN COMPOUND SEMICONDUCTOR SUBSTRATE AND NITROGEN COMPOUND SEMICONDUCTOR SUBSTRATE, AND METHOD FOR MANUFACTURING SINGLE CRYSTAL SIC SUBSTRATE AND SINGLE CRYSTAL SIC SUBSTRATE - In order to provide a method for manufacturing a single crystal SiC substrate that can obtain an SiC layer with good crystallinity, an Si substrate | 2011-04-21 |
20110089434 | DISPLAY PANEL AND REWORK METHOD OF GATE INSULATING LAYER OF THIN FILM TRANSISTOR - A rework method of a gate insulating layer of a thin film transistor includes the following steps. First, a substrate including a silicon nitride layer, which serves as a gate insulating layer, disposed thereon. Subsequently, a first film removal process is performed to remove the silicon nitride layer. The first film removal process includes an inductively coupled plasma (ICP) etching process. The ICP etching process is carried out by introducing gases including sulfur hexafluoride and oxygen. The ICP etching process has an etching selectivity ratio of the silicon nitride layer to the substrate, which is substantially between 18 and 30. | 2011-04-21 |
20110089435 | LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - A light emitting device includes a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer between the first and second conductive semiconductor layers; a passivation layer at least partially on the light emitting structure; a first electrode on the first conductive semiconductor layer; and a second electrode on the first electrode and the passivation layer. | 2011-04-21 |
20110089436 | LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - A method of manufacturing a light emitting device according to the embodiment includes the steps of partially forming a first buffer layer on a growth substrate, in which the first buffer layer has a Young's modulus smaller than that of the growth substrate; and forming a light emitting structure layer on the growth substrate and the first buffer layer, in which the light emitting structure layer includes a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer interposed between the first and second conductive semiconductor layers. | 2011-04-21 |
20110089437 | CROSS FLOW CVD REACTOR - A cross flow chemical vapor deposition chamber can comprise an inlet duct having a generally rectangular cross-section and an outlet duct having a generally rectangular cross-section. The rectangular inlet duct and the rectangular outlet duct can facilitate laminar flow of reactant gases over a susceptor. Movable partitions can be configured to define a plurality of zones within the chamber. Each zone can contain a different reactant gas, concentration of reactant gas, and/or flow rate of reactant gas. Enhanced laminar flow can be provided, undesirable depletion of reactant gas can be mitigated, and enhanced control of reactant gases can be facilitated. | 2011-04-21 |
20110089438 | OPTO-ELECTRICAL ASSEMBLIES AND ASSOCIATED APPARATUS AND METHODS - Provided is a method of providing an opto-electrical assembly. The method comprises attaching a second electrical element to a carrier using a second attachment region at a second attaching temperature. The second attaching temperature is associated with the melting temperature of the second attachment region, such as the melting temperature of solder or the like. The carrier already comprises a first opto-electrical element having been attached to the carrier using a first attachment region at a first attaching temperature, whereby the first attaching temperature is associated with the melting temperature of the first attachment region. The method is provided such that the second attachment region has a lower melting temperature than the first attachment region such that the second attaching temperature is lower than the first attaching temperature. The resulting opto-electrical carrier assembly is compatible to industry-standard RoHS-compliant solder reflow attachment schemes to PCB and ceramic substrates (and similar). | 2011-04-21 |
20110089439 | INTEGRATED CMOS POROUS SENSOR - A single chip wireless sensor comprises a microcontroller connected by a transmit/receive interface to a wireless antenna. The microcontroller is also connected to an 8 kB RAM, a USB interface, an RS232 interface, 64 kB flash memory, and a 32 kHz crystal. The device senses humidity and temperature, and a humidity sensor is connected by an 18 bit ΣΔ A-to-D converter to the microcontroller and a temperature sensor is connected by a 12 bit SAR A-to-D converter to the microcontroller. The device is an integrated chip manufactured in a single process in which both the electronics and sensor components are manufactured using standard CMOS processing techniques, applied to achieve both electronic and sensing components in an integrated process. | 2011-04-21 |
20110089440 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME - Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a first chip structure including a first reflective layer and a first light emitting structure having a plurality of compound semiconductor layers on the first reflective layer; a second chip structure bonded onto the first chip structure and including a second reflective layer and a second light emitting structure having a plurality of compound semiconductor layers on the second reflective layer; and an electrode on the second chip structure. | 2011-04-21 |
20110089441 | MULTICHIP TYPE LED PACKAGE STRUCTURE FOR GENERATING LIGHT-EMITTING EFFECT SIMILAR TO CIRCLE SHAPE - A multichip type LED package structure for generating light-emitting effect similar to circle shape includes a substrate unit, a light-emitting unit and a package unit. The substrate unit has a substrate body and a plurality of conductive circuits separated from each other by a predetermined distance and disposed on the substrate body. Each conductive circuit has a plurality of extending portions, and the extending portions of every two conductive circuits are adjacent to each other and are alternated with each other. The light-emitting unit has a plurality of LED chips selectively electrically disposed on the substrate unit. The package unit has a light-transmitting package resin body formed on the substrate unit to cover the LED chips. | 2011-04-21 |
20110089442 | OPTOELECTRONIC DEVICE - An optoelectronic device comprising: a substrate; a plurality of semiconductor units electrically connected with each other and disposed jointly on the substrate, wherein each semiconductor unit comprises a first semiconductor layer, a second semiconductor layer, and an active region interposed between thereof; a plurality of first electrodes disposed on each first semiconductor layer respectively; and a plurality of second electrodes disposed on each second semiconductor layer respectively, wherein at least one of the first electrodes comprises a first extension, and at least one of the second electrodes comprises a second extension, wherein at least one of the first extension and the second extension comprises a curve which is not parallel to the edge of the semiconductor units. | 2011-04-21 |
20110089443 | Packaging Structure of AC light-emitting diodes - A packaging structure of AC LEDs is provided, which comprises: a carrier containing a positive electrode connecting end, and a negative electrode connecting end; an AC LED module disposed on the carrier, wherein the AC LED module electrically connects to the positive electrode connecting end and the negative electrode connecting end of the carrier; and a die-bonding insulating layer disposed between the AC LED module and the carrier. | 2011-04-21 |
20110089444 | LIGHT-EMITTING ELEMENT - A light emitting element includes a carrier, a conductive connecting structure disposed on the carrier, an epitaxial stack structure including at least a first lighting stack and a second lighting stack disposed on the conductive connecting structure, an insulation section disposed between the epitaxial stack structure and the conductive connecting structure, and at least a metal line laid on the surface of the light emitting element, wherein the first light emitting stack further includes two electrodes having different polarity formed thereon; the second lighting stack is electrically connected to the conductive connecting structure at the bottom thereof and includes an electrode formed thereon. The insulation section is disposed below the first lighting stack to make the first lighting stack be insulated from the conductive connecting structure. The metal lines and the conductive connecting structure are electrically connected to each of the lighting stacks in parallel connection or series connection. | 2011-04-21 |
20110089445 | METHOD FOR PREPARING A SEMICONDUCTOR - The invention concerns a method for preparing a NIII-V semiconductor. According to the invention, the method includes at least one step of doping a semiconductor of general formula Al | 2011-04-21 |
20110089446 | LIGHT-EMITTING DIODE HAVING OPTICAL FILM STRUCTURE THEREON - The invention discloses a light-emitting diode having an optical film structure thereon. The light-emitting diode includes a substrate, a light-emitting laminated structure, and an optical film structure. The light-emitting laminated structure is formed on the substrate, and the optical film structure is formed on the light-emitting laminated structure. The optical film structure is made of a dielectric material and has a light output plane, wherein the light output plane has plural roughened structures thereon. | 2011-04-21 |
20110089447 | LIGHT-EMITING DEVICE CHIP WITH MICRO-LENSES AND METHOD FOR FABRICATING THE SAME - A light-emitting device (LED) chip is disclosed. The LED chip includes a body having a light extraction surface. The body includes semiconductor layers including an n-type region and a p-type region. A plurality of micro-lenses is directly on the light extraction surface of the body. A pair of bond pads is electrically connected to the n-type and p-type regions, respectively. A method for fabricating the LED chip and an LED package with the LED chip are also disclosed. | 2011-04-21 |
20110089448 | Single Encapsulant For A Plurality Of Light Sources - In an embodiment, the invention provides a light source comprising a plurality of light-emitting semiconductor chips, a plurality of electrical leads and an encapsulant. The plurality of electrical leads is connected to the plurality of light-emitting semiconductor chips. The encapsulant completely encases the plurality of semiconductor chips. The encapsulant partially encases the plurality of electrical leads. | 2011-04-21 |