13th week of 2013 patent applcation highlights part 15 |
Patent application number | Title | Published |
20130075639 | FLUID-BIASED HYDRAULIC CONTROL VALVE - A hydraulic control valve is provided having a solenoid body, an energizable coil, and an armature positioned adjacent the coil. A valve stem extends from the armature. The coil is energizable to move the armature and the valve stem from a first position to a second position. The valve body, the armature and the valve stem are configured so that the armature and the valve stem are biased to the first position by pressurized fluid, allowing the armature to operate without a biasing spring. | 2013-03-28 |
20130075640 | LEARNING MECHANICAL STOPS IN A NON-RIGID INTERMEDIATE GEAR - A method for determining information regarding a final position of an element of a gear, in particular a drive gear wheel, the information regarding the final position representing a stop position of a throttle valve at a mechanical stop, includes moving the element from a starting position in the direction of the final position, until the element comes to a standstill despite a specified supply of drive energy; determining information regarding the position of the element at standstill despite the supply of drive energy; and determining the information regarding the final position in that information of a correction distance is applied to the information regarding the position of the element, in particular subtracted, counter to the direction of the final position at standstill despite the supply of drive energy. | 2013-03-28 |
20130075641 | VALVE WITH CANTED SEALS | 2013-03-28 |
20130075642 | Rotary Control Valve - A control valve comprises a first spool | 2013-03-28 |
20130075643 | Discharge valve - A discharge valve including a tubular, valve seat and a valve guide disposed above the valve seat. The valve guide has a discharge passage plug and a guide rod that is affixed to, and projects downwardly from, the bottom of the plug. The valve guide also has an interiorly threaded, lifting sleeve that is affixed to, and projects upwardly from, the top of the plug. A piston is disposed between the valve seat and the valve guide. The piston has a conical, head portion for engaging the top of the valve seat, and a stem portion that is affixed to, and extends upwardly from, the head portion. The stem portion has a longitudinal socket within which the guide rod is slidably received. The stem portion also has a number of apertures that intersect the socket for providing pressure relief to the socket. A compressed spring is disposed between the valve guide and the head portion of the piston for normally retaining the head portion in engagement with the valve seat. An externally threaded, valve retainer is disposed above the valve guide for pressing the valve guide toward the valve seat. | 2013-03-28 |
20130075644 | VALVE SEAT BODY AND VALVE DEVICE - A valve device includes a valve body and a valve seat body. The valve seat body has a thick cylindrical shape extending in an axis line direction. The valve seat body includes a seal groove on an outer periphery thereof, the seal groove extending in a circumferential direction. The valve seat body includes a large-diameter portion and a small-diameter portion on an inner periphery thereof, the large-diameter and small-diameter portions connected to each other in the axis line direction. The valve seat body includes a valve seat portion between the large-diameter and small-diameter portions, the valve body being seated on the valve seat portion. The position of the seal groove in the axis line direction coincides with the position of the valve seat portion in the axis line direction or is located on a high-pressure side of the position of the valve seat portion in the axis line direction. | 2013-03-28 |
20130075645 | T-SHAPED VALVE - A T-shaped valve includes an improved fitting structure is disclosed. A T-shaped valve has a connecting pipe and a branch pipe carrying a control valve. The connecting pipe has an inlet end provided with the fitting structure that includes a receiving section of the connecting pipe defining a receiving portion at the inlet end; an adapter having fixed to the receiving portion and peripherally formed with a flange; and a nut internally formed with a peripheral stepped section for retaining the flange such that the adapter is allowed to rotate with respect to the nut. The T-shaped valve in virtue of the improved fitting structure can be properly installed without repeated adjustment and reinstallation. Furthermore, components of the T-shaped valve are made of alternative material instead of lead-containing metal, so the T-shaped valve ensures water quality. | 2013-03-28 |
20130075646 | HEAT STORAGE COMPOSITION COMPRISING SODIUM SULFATE DECAHYDRATE AND SUPERABSORBENT - The present invention relates to a heat storage composition comprising
| 2013-03-28 |
20130075647 | ELECTROLYTE SYNTHESIS FOR ULTRACAPACITORS - A method of forming an electrolyte solution involves combining ammonium tetrafluoroborate and a quaternary ammonium halide in a liquid solvent to form a quaternary ammonium tetrafluoroborate and an ammonium halide. The ammonium halide precipitate is removed from the solvent to form an electrolyte solution. The reactants can be added step-wise to the solvent, and the method can include using a stoichiometric excess of the ammonium tetrafluoroborate to form a substantially halide ion-free electrolyte solution. | 2013-03-28 |
20130075648 | Interface colloidal robotic manipulator - A magnetic colloidal system confined at the interface between two immiscible liquids and energized by an alternating magnetic field dynamically self-assembles into localized asters and arrays of asters. The colloidal system exhibits locomotion and shape change. By controlling a small external magnetic field applied parallel to the interface, structures can capture, transport, and position target particles. | 2013-03-28 |
20130075649 | MAGNETIC GLUE - A magnetic glue includes a curable glue and magnetic nanoparticles mixed in the curable glue. The magnetic glue is used in a lens module to avoid polluting the optical portion of the lens module. | 2013-03-28 |
20130075650 | Method and Apparatus for Identifying and Characterizing Material Solvents and Composite Matrices and Methods of Using Same - Solvents for macromolecules generally believed to be insoluble in their pristine form are identified by generation of a “solvent resonance” in the relationship between solvent quality (deduced by Rayleigh scattering) and an intrinsic property of solvents. A local extreme of the solvent resonance identifies the ideal intrinsic property of an ideal solvent which may then be used to select a particular solvent or solvent combination. A solvent for graphene is used in the production of transparent conductive electrodes. | 2013-03-28 |
20130075651 | METHOD FOR PRODUCING PURIFIED ACTIVE SILICIC ACID SOLUTION AND SILICA SOL - A method for producing an active silicic acid solution in which the existing amount of foreign matters as plate-like fine particles is reduced and a method for producing a silica sol in which such foreign matters are reduced. The method fulfills the following condition: the existing amount of plate-like fine particles having a length of one side of 0.2 to 4.0 μm and a thickness of 1 to 100 nm is measured to be 0% to 30% in accordance with measuring method A, the method including the steps of: preparing an active silicic acid solution by subjecting an alkali silicate aqueous solution having a silica concentration of 0.5% by mass to 10.0% by mass to cation-exchange to remove alkaline components; and filtering the active silicic acid solution through a filter whose removal rate of particles having a primary particle size of 1.0 μm is 50% or more. | 2013-03-28 |
20130075652 | METHOD OF MANUFACTURING SILICA PARTICLE DISPERSION - A method of manufacturing a silica particle dispersion, includes preparing a silica particle dispersion containing silica particles and a solvent, primary concentrating the silica particle dispersion, adding a hydrophobizing treatment agent to the silica particle dispersion after the primary concentrating, and secondary concentrating the silica particle dispersion after the adding. | 2013-03-28 |
20130075653 | POWER TRANSMISSION BUS BAR FILLING MATERIAL - A filling material of power transmission bus bar, composed mainly of a silicone and an inorganic material, wherein weight ratio of said silicone and said inorganic material is between 1:0.1 and 1:9. As such, the resilience of the silicone can increase the buffering capability of said power transmission bus bar in facing pressure of strong winds; also stiffness of said inorganic material can increase the stability of said power transmission bus bar in a same situation. Said filling material of power transmission bus bar is able to protect metallic conduction element of said power transmission bus bar from getting in touch with moisture and dust, that may reduce its efficiency in transmitting power. | 2013-03-28 |
20130075654 | HIGHLY AROMATIC COMPOUNDS AND POLYMERS AS PRECURSORS TO CARBON NANOTUBE AND METAL NANOPARTICLE COMPOSITIONS IN SHAPED SOLIDS - A method of making metal nanoparticles and carbon nanotubes is disclosed. A mixture of a transition metal compound and an aromatic polymer, a precursor of an aromatic polymer, or an aromatic monomer is heated to form a metal nanoparticle composition, optionally containing carbon nanotubes. | 2013-03-28 |
20130075655 | METHODS OF MAKING OXYGEN SCAVENGING ARTICLES CONTAINING MOISTURE - An extruded or molded article containing iron based oxygen scavenger, electrolytes, activated carbon, silica gel, or other water absorbing media, and optionally pore formers, is subjected to deformation to create voids or porosity, and subjected to water spraying or dipping to obtain a water activity of 0.4 or higher. The article is placed in a container or package containing oxygen sensitive articles. | 2013-03-28 |
20130075656 | OXIDE STANNATE LUMINESCENT MATERIAL AND PREPARATION METHOD THEREOF - A luminescent material and a preparation method thereof are provided. The said luminescent material is represented by the following chemical formula: Ln | 2013-03-28 |
20130075657 | HALOGEN SILICATE LUMINESCENT MATERIAL AND THE PREPARATION METHOD AND APPLICATION THEREOF - Disclosed is a halogen silicate luminescent material having a chemical structural formula of (N | 2013-03-28 |
20130075658 | FLUORESCENT POWDER OF HALOGEN SILICATE CONTAINING NANO-METAL PARTICLES AND PREPARATION METHOD THEREOF - Provided is a fluorescent powder of halogen-silicate containing nano-metal particles with the formula of CaX | 2013-03-28 |
20130075659 | LUMINESCENT MATERIAL OF SILICATE AND PREPARING METHOD THEREOF - A luminescent material of silicate is provided. The luminescent material has a formula of Ln | 2013-03-28 |
20130075660 | PHOSPHOR AND METHOD FOR PREPARING THE SAME - Disclosed is a phosphor and a method for preparing the same. The phosphor comprises a material having a general composition formula expressed by M | 2013-03-28 |
20130075661 | SILICATE LUMINOUS MATERIAL AND PREPARATION METHOD THEREOF - Silicate luminous material and preparation method thereof are provided. The luminous material is represented by the following chemical formula: Zn | 2013-03-28 |
20130075662 | YTTRIUM OXIDE PHOSPHOR AND PREPARATION METHOD THEREOF - Fluorescent materials and preparation methods thereof are provided. The fluorescent materials are represented by the general formula: Y | 2013-03-28 |
20130075663 | NUCLEIC ACID LADDERS - The present invention provides nucleic acid compositions or ladders which may be used as standards for estimating the size (in base pairs) and or mass of nucleic acid molecules of unknown size and/or mass. The invention also relates to methods for producing such compositions or ladders, ladders or compositions produced by such methods, and to methods for estimating the size and/or mass of nucleic acid molecules by comparison to these nucleic acid sizing ladders. | 2013-03-28 |
20130075664 | COLOURED POLYMER PARTICLES - This invention relates to coloured polymer particles prepared by a reverse emulsion solvent removal process, electrophoretic fluids comprising such particles, and electrophoretic display devices comprising such fluids. | 2013-03-28 |
20130075665 | WATER-SOLUBLE POLYMER AND WATER-SOLUBLE NANOPARTICLE COMPOSITE - A water-soluble nanoparticle complex has a plurality of accumulated nanoparticles and has excellent uniformity and stability by forming a complex of nanoparticles using a water-soluble polymer and which allows for use of nanoparticles in biochemical applications. | 2013-03-28 |
20130075666 | Polymer Electrolyte Composition and Dye-Sensitized Solar Cell Containing the Same - Disclosed is a polymer electrolyte composition, a gel-type polymer electrolyte obtained by mixing the same at normal temperature, and a dye-sensitized solar cell containing the electrolyte. Since the poly(alkylene carbonate)-based polymer is included, a crosslinking process by radiation of heat or UV is not required when the polymer electrolyte is manufactured, such that a manufacturing process is simple. Accordingly, the polymer electrolyte is useful for mass production of a solar cell and maintained in a uniform state without a phase separation between two components due to excellent affinity between the polymer and the organic solvent included in the electrolyte, and has excellent electrode-electrolyte interface property in the solar cell due to an adhesive property of the gelled polymer electrolyte. | 2013-03-28 |
20130075667 | METHOD FOR PREPARING SILICON OXIDE-CARBON COMPOSITE FOR NEGATIVE ELECTRODE OF LITHIUM SECONDARY BATTERY - A method of preparing a silicon oxide (Si | 2013-03-28 |
20130075668 | CONDUCTIVE SEALANT COMPOSITIONS - Embodiments of the present disclosure are directed to sealant compositions including a base composition with at least one sulfur-containing polymer, a curing agent composition, and an electrically conductive filler including carbon nanotubes and stainless steel fibers. The electrically conductive filler can be in either or both of the base composition and the curing agent composition. The sealant compositions are substantially Ni-free and exhibit unexpectedly superior EMI/RFI shielding effectiveness. | 2013-03-28 |
20130075669 | TITANIUM DIBORIDE-SILICON CARBIDE COMPOSITES USEFUL IN ELECTROLYTIC ALUMINUM PRODUCTION CELLS AND METHODS FOR PRODUCING THE SAME - Composite materials comprising titanium diboride, silicon carbide and carbon-containing scavenger additions are useful in electrolytic aluminum production cells. The carbon-containing scavenger additions may include tungsten carbide, boron carbide and/or carbon. The amounts of titanium diboride, silicon carbide and carbon-containing scavenger are controlled in order to provide optimum perfonnance. The titanium diboride/silicon carbide composite materials may be used as cathodes in electrolytic aluminum production cells and are electrically conductive, exhibit desirable aluminum wetting behavior, and are capable of withstanding exposure to molten cryolite, molten aluminum and oxygen at elevated temperatures during operation of such cells. | 2013-03-28 |
20130075670 | AMINOBENZENE COMPOSITIONS AND RELATED DEVICES AND METHODS - Oligomers and/or polymers comprising a backbone comprising arylamine and fluorinated alkyleneoxy moieties which may be crosslinked. Ink formulations and devices can be formed from the oligomers or polymers, or corresponding monomers. Doped compositions can be formed. Charge injection and transport layers can be formed. Improved stability can be achieved in organic electronic devices such as OLEDs and OPVs. | 2013-03-28 |
20130075671 | METHODS FOR FORMING POLYIMIDE-CARBON NANOTUBE COMPOSITE FILM, AND POLYIMIDE-CARBON NANOTUBE COMPOSITE FILMS FORMED THEREOF - A method for forming a polyimide-carbon nanotube composite film on a substrate is provided. The method comprises: suspending carbon nanotubes in a solution comprising a poly(amic acid) and a suitable solvent; casting the solution onto a substrate to form a layer on the substrate; and heating the layer to convert the poly(amic acid) into a polyimide to form the polyimide-carbon nanotube composite film. A polyimide-carbon nanotube composite film and an electronic device comprising the polyimide-carbon nanotube composite film are also provided. | 2013-03-28 |
20130075672 | Kit for preparing a conductive pattern - The invention relates to a kit for preparing a conductive element comprising a container A containing a liquid dispersion A′, comprising dispersed nanoparticles having a metallic surface and a ligand capable of binding to said surface; a container B—which may be the same or different as the container A containing the liquid dispersion A′—said container B containing a liquid B′ comprising reducible silver ions or other reducible metal ions; and a further container C containing a liquid C′ comprising a reducing agent for the metal ions of the liquid from container B. | 2013-03-28 |
20130075673 | METHOD FOR PRODUCING LITHIUM-CONTAINING COMPOSITE OXIDE - The present invention provides a method for producing a lithium-containing composite oxide represented by general formula (1) below, the method at least including a step of preparing a solution by dissolving a lithium source, an element M source, a phosphorus source, and an element X source that serve as source materials in a solvent, the phosphorus source being added after at least the element M source is dissolved; a step of gelating the resulting solution; and a step of calcining the resulting gel: | 2013-03-28 |
20130075674 | Method and Structure for Non-Linear Optics - A compound for non-linear optics for use at 350 nm and below. The compound includes a material for non-linear optics comprising A | 2013-03-28 |
20130075675 | Thermochromic Compositions From Trisubstituted Pyridine Leuco Dyes - A thermochromic leuco dye composition contains a leuco dye moiety including one or more tri-aryl substituted pyridines, a UVA developer moiety including at least one UVA developer selected from the group consisting of salicylic acid and derivatives thereof, and biphenyls and derivatives thereof, and a carrier selected from the group consisting of a fatty ester, fatty alcohol, fatty amide, and combinations thereof. | 2013-03-28 |
20130075676 | COMPOSITE CRYSTAL COLLOIDAL ARRAY WITH PHOTOCHROMIC MEMBER - The invention includes a composite material for use in a security device including a radiation diffracting component that exhibits a first optical effect and a photochromic component that exhibits a second optical effect. The composite material is particularly suited for use in authenticating articles, such as currency. | 2013-03-28 |
20130075677 | METHOD OF MAKING NANOSTRUCTURED GLASS-CERAMIC WASTE FORMS - A waste form for and a method of rendering hazardous materials less dangerous is disclosed that includes fixing the hazardous material in nanopores of a nanoporous material, reacting the trapped hazardous material to render it less volatile/soluble, and vitrifying the nanoporous material containing the less volatile/soluble hazardous material. | 2013-03-28 |
20130075678 | LOW PROFILE JACK - A jack assembly includes a dual threaded screw with a right-hand-threaded section and a left-hand-threaded section. A first drive member mates with the right-hand-threaded section, and a second drive member mates with the left-hand-threaded section. The drive members drive an extendible platform that moves to an extended position when the screw is moved in a first direction, or a retracted position when the screw is moved in a second, opposite direction. | 2013-03-28 |
20130075679 | DRIVEN GUIDE SYSTEMS FOR LIFTS - An apparatus comprising a pair of telescoping arms pivotally coupled between a base and a platform. Each arm comprises a base portion pivotally coupled to the base to pivot about a base pivot axis, an extension portion slidably coupled to the base portion and pivotally coupled to the platform to pivot about a platform pivot axis, and, a pivot support assembly attached along a side of one arm of the pair facing toward the other arm of the pair. The pivot support assembly is configured to allow longitudinal travel of a pivot anchor with respect to the base portion. A pivot assembly is coupled between the pivot anchors. A drive assembly is connected to controllably move the extension portions inwardly and outwardly with respect to the corresponding base portions, and controllably move the pivot anchors toward and away from the corresponding base pivot axes. | 2013-03-28 |
20130075680 | SAFETY BARRIER FOR A RAILWAY TRACK - A guardrail assembly ( | 2013-03-28 |
20130075681 | VARIABLE RAIL RECEIVING UNIT - The present invention relates to a handrail assembly ( | 2013-03-28 |
20130075682 | PHASE CHANGE RANDOM ACCESS MEMORY AND METHOD FOR MANUFACTURING THE SAME - A phase change random access memory includes a semiconductor substrate having a bottom electrode formed over the semiconductor substrate; and a phase change layer formed over the bottom electrode. The phase change layer a first phase change layer formed over the bottom electrode and including at least one of a first element, a second element, and a third element; and a second phase change layer formed over a surface of the first phase change layer and formed of the first element to prevent an area of the first phase change layer from increasing through diffusion. | 2013-03-28 |
20130075683 | INTEGRATED NONVOLATILE RESISTIVE MEMORY ELEMENTS - A resistive memory apparatus provides resistive memory material between conductive traces on a substrate or in a film stack on a substrate. The resistive memory apparatus may provide a sealed cavity or may utilize material obviating the need for the cavity. Methods and materials utilized to form the resistive memory apparatus are compatible with current microelectronic fabrication techniques. The resistive memory apparatus is nonvolatile or requires no power to maintain a programmed state. The resistive memory device may also be directly integrated with other microelectronic components. | 2013-03-28 |
20130075684 | NON-VOLATILE MEMORY DEVICE - A non-volatile memory device includes: a first line extending along a main surface of a substrate; a stack provided above the first line; a second line formed above the stack; a select element provided where the first and second lines intersect, the select element adapted to pass current in a direction perpendicular to the main surface; a second insulator film provided along a side surface of the stack; a channel layer provided along the second insulator film; an adhesion layer provided along the channel layer; and a variable resistance material layer provided along the adhesion layer, wherein the first and second lines are electrically connected via the select element and channel layer, a contact resistance via the adhesion layer between the channel layer and variable resistance material layer is low, and a resistance of the adhesion layer is high with respect to an extending direction of the channel layer. | 2013-03-28 |
20130075685 | METHODS AND APPARATUS FOR INCLUDING AN AIR GAP IN CARBON-BASED MEMORY DEVICES - In some aspects, a reversible resistance-switching metal-insulator-metal stack is provided that includes a first conducting layer, a carbon nano-tube (“CNT”) material above the first conducting layer, a second conducting layer above the CNT material, and an air gap between the first conducting layer and the CNT material. Numerous other aspects are provided. | 2013-03-28 |
20130075686 | VARIABLE RESISTANCE MEMORY - A variable resistance memory according to the present embodiment includes a memory cell including an ion source electrode including metal atoms, an opposite electrode, an amorphous silicon film formed between the ion source electrode and the opposite electrode, and a polysilicon film formed between the amorphous silicon film and the ion source electrode. | 2013-03-28 |
20130075687 | METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND NONVOLATILE SEMICONDUCTOR STORAGE DEVICE - A method for manufacturing a nonvolatile semiconductor storage device according to an embodiment includes laminating a first wire extending in a first direction, and a film made into a variable resistance element made of a metallic material, which are laminated in order on a semiconductor substrate, dividing, into a plurality of pieces, the film made into the variable resistance element, in the first direction and a second direction, forming an interlayer insulating film between the plurality of pieces formed by dividing the film made into the variable resistance element in the second direction, and oxidizing the metallic material of the film made into the variable resistance element, and laminating an upper electrode and a second wire extending in the second direction, which are laminated in order on the film made into the variable resistance element and the interlayer insulating film. | 2013-03-28 |
20130075688 | Semiconductor Memory Device and Manufacturing Method Thereof - A semiconductor memory device includes a first insulating portion. The semiconductor memory device further includes a phase-change material element that contacts the first insulating portion. The semiconductor memory device further includes an electrode that contacts a side surface of the phase-change material element, the side surface of the phase-change material element being not parallel to a top surface of the electrode. The semiconductor memory device further includes a second insulating portion surrounding the phase-change material element. | 2013-03-28 |
20130075689 | STACKABLE NON-VOLATILE RESISTIVE SWITCHING MEMORY DEVICE AND METHOD - A memory device includes a first plurality of memory cells arranged in a first crossbar array, a first thickness of dielectric material overlying the first plurality of memory cells, and a second plurality of memory cells arranged in a second crossbar array overlying the first thickness of dielectric material. The memory device further includes a second thickness of dielectric material overlying the second plurality of memory cells. In a specific embodiment, the memory device further includes a Nth thickness of dielectric material overlying an Nth plurality of memory cells, where N is an integer ranging from 3 to 8. | 2013-03-28 |
20130075690 | Ammonia Nanosensors, and Environmental Control System - Embodiments of nanoelectronic sensors are described, including sensors for detecting analytes such ammonia. An environmental control system employing nanoelectronic sensors is described. A personnel safety system configured as a disposable badge employing nanoelectronic sensors is described. A method of dynamic sampling and exposure of a sensor providing a number of operational advantages is described. | 2013-03-28 |
20130075691 | Deep Ultraviolet Light Emitting Diode - A carbon doped short period superlattice is provided. A heterostructure includes a short period superlattice comprising a plurality of quantum wells alternating with a plurality of barriers. One or more of the quantum wells and/or the barriers includes a percolated carbon atomic plane. | 2013-03-28 |
20130075692 | SEMICONDUCTOR NANOPARTICLE-BASED LIGHT EMITTING MATERIALS - A light emitting layer including a plurality of light emitting particles embedded within a host matrix material. Each of said light emitting particles includes a population of semiconductor nanoparticles embedded within a polymeric encapsulation medium. A method of fabricating a light emitting layer comprising a plurality of light emitting particles embedded within a host matrix material, each of said light emitting particles comprising a population of semiconductor nanoparticles embedded within a polymeric encapsulation medium. The method comprises providing a dispersion containing said light emitting particles, depositing said dispersion to form a film, and processing said film to produce said light emitting layer. | 2013-03-28 |
20130075693 | COALESCED NANOWIRE STRUCTURES WITH INTERSTITIAL VOIDS AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer. | 2013-03-28 |
20130075694 | STRAIN-CONTROLLED ATOMIC LAYER EPITAXY, QUANTUM WELLS AND SUPERLATTICES PREPARED THEREBY AND USES THEREOF - Processes for forming quantum well structures which are characterized by controllable nitride content are provided, as well as superlattice structures, optical devices and optical communication systems based thereon. | 2013-03-28 |
20130075695 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - A light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system are disclosed. The light emitting device may include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers. The first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer may include Al. The second conductive semiconductor layer may have Al content higher than Al content of the first conductive semiconductor layer. The first conductive semiconductor layer may have Al content higher than Al content of the active layer. | 2013-03-28 |
20130075696 | LIGHT-EMITTING ELEMENT WITH MULTIPLE LIGHT-EMTTING STACKED LAYERS - A light-emitting device includes a first light-emitting element emitting a first light with a first dominant wavelength including a first MQW structure including a first number of MQW pairs; a second MQW structure on the first MQW structure, including a second number of MQW pairs; and a tunneling layer between the first MQW structure and the second MQW structure; and a second light-emitting element emitting a third light with a third dominant wavelength, wherein the first number is different from the second number. | 2013-03-28 |
20130075697 | ULTRAVIOLET IRRADIATION APPARATUS - Provided is a compact ultraviolet irradiation apparatus which is capable of emitting ultraviolet radiation with high efficiency. | 2013-03-28 |
20130075698 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor layer provided over a substrate; an electron transit layer contacting a top of the first semiconductor layer; and a second semiconductor layer contacting a top of the electron transit layer, wherein the electron transit layer has a dual quantum well layer having a structure where a first well layer, an intermediate barrier layer, and a second well layer are sequentially stacked, an energy of a conduction band of the intermediate barrier layer is lower than an energy of conduction band of the first semiconductor layer and the second semiconductor layer, and a ground level is generated in the first and second well layers, and a first excitation level is generated in the dual quantum well layer. | 2013-03-28 |
20130075699 | NANO-STRUCTURE ARRAYS FOR EMR IMAGING - An electro-magnetic radiation detector is described. The electro-magnetic radiation detector includes a detector material and a voltage biasing element. The detector material includes a substantially regular array of nano-particles embedded in a matrix material. The voltage biasing element is configured to apply a bias voltage to the matrix material such that electrical current is directly generated based on a cooperative plasmon effect in the detector material when electro-magnetic radiation in a predetermined wavelength range is incident upon the detector material, where the dominant mechanism for decay in the cooperative plasmon effect is non-radiative. | 2013-03-28 |
20130075700 | Electrode Structure Including Graphene And Field Effect Transistor Having The Same - According to example embodiments, an electrode structure includes a graphene layer on a semiconductor layer and an electrode containing metal on the graphene layer. A field effect transistor (FET) may include the electrode structure. | 2013-03-28 |
20130075701 | PROGRAMMABLE ARRAY OF SILICON NANOWIRE FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME - The present invention discloses a hexagonal programmable array based on a silicon nanowire field effect transistor and a method for fabricating the same. The array includes a nanowire device, a nanowire device connection region and a gate connection region, wherein, the nanowire device has a cylinder shape, and includes a silicon nanowire channel, a gate dielectric layer, and a gate region, the nanowire channel being surrounded by the gate dielectric layer, and the gate dielectric layer being surrounded by the gate region; the nanowire devices are arranged in a hexagon shape to form programming unit, the nanowire device connection region is a connection node of three nanowire devices and secured to a silicon supporter. The present invention can achieve a complex control logic of interconnections and is suitable for a digital/analog and a mixed-signal circuit having a high integration degree and a high speed. | 2013-03-28 |
20130075702 | Tunable Hot-Electron Transfer Within a Nanostructure - Provided are multimaterial devices, such as coaxial nanowires, that effect hot photoexcited electron transfer across the interface of the materials. Modulation of the transfer rates, manifested as a large tunability of the voltage onset of negative differential resistance and of voltage-current phase, may be effected by modulating electrostatic gating, incident photon energy, and the incident photon intensity. Dynamic manipulation of this transfer rate permits the introduction and control of an adjustable phase delay within a device element. | 2013-03-28 |
20130075703 | PEPTIDE NANOSTRUCTURES ENCAPSULATING A FOREIGN MATERIAL AND METHOD OF MANUFACTURING SAME - A composition comprising a material at least partially enclosed by a tubular, spherical or planar nanostructure composed of a plurality of peptides, wherein each of the plurality of peptides includes no more than 4 amino acids and whereas at least one of the 4 amino acids is an aromatic amino acid. | 2013-03-28 |
20130075704 | HETEROCYCLIC COMPOUND, LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, LIGHTING DEVICE, AND ORGANIC COMPOUND - Provided is a novel heterocyclic compound which can be used in a light-emitting layer of a light-emitting element as a host material in which a light-emitting material is dispersed, i.e., a heterocyclic compound represented by a general formula (G1). Any one of R | 2013-03-28 |
20130075705 | Carbazole Compound, Light-Emitting Element Material, and Organic Semiconductor Material - A carbazole compound which can be used for a transport layer or as a host material or a light-emitting material of a light-emitting element is provided. Specifically, a carbazole compound which makes it possible to obtain a light-emitting element having good characteristics when used in a light-emitting element emitting blue phosphorescence is provided. In the carbazole compound, the 9-position of one carbazole, the 9-position of the other carbazole, and the 1-position of a benzimidazole skeleton are bonded to the 1-position, the 3-position, and the 5-position of benzene. | 2013-03-28 |
20130075706 | SUBSTITUTED BIARYL COMPOUNDS FOR LIGHT-EMITTING DEVICES - Some substituted biaryl ring systems may be useful in light-emitting devices, such as those comprising a light-emitting diode. For example, substituted bipyridinyl or substituted phenylpyridinyl may be useful in these devices. The substituted biaryl ring system may have at least two different substituents, including one on each ring on the biaryl system. The first substituent may include optionally substituted carbazolyl, optionally substituted diphenylamine, optionally substituted diphenylaminophenyl, and optionally substituted carbazolylphenyl. The second substituent may include optionally substituted benzimidazol-2-yl, optionally substituted benzoxazol-2-yl, and an optionally substituted benzothiazol-2-yl. | 2013-03-28 |
20130075707 | LIGHT-EMITTING DEVICE AND LIGHTING APPARATUS - The light output surface structure layer has a concavo-convex structure on a surface opposite to the organic EL element. The concavo-convex structure includes flat surface portions parallel to one surface of the organic EL element and an inclined surface portion tilted relative to the flat surface portions. The projected area which is formed by projecting the inclined surface portion in a direction perpendicular to the flat surface portions onto a plane parallel to the flat surface portions is equal to or less than 0.1 times the total area of the flat surface portions. On a cross section of a flat surface portion cut along a plane parallel to the width and thickness directions thereof, the ratio H/W is 1 or greater and 2.5 or less, where H and W are the height and the width thereof, respectively. | 2013-03-28 |
20130075708 | LIGHT EMITTING DEVICE - The present invention provides a light emitting device | 2013-03-28 |
20130075709 | Light Emitting Device and Electronic Equipment - A display device capable of keeping the luminance constant irrespective of temperature change is provided as well as a method of driving the display device. A current mirror circuit composed of transistors is placed in each pixel. A first transistor and a second transistor of the current mirror circuit are connected such that the drain current of the first transistor is kept in proportion to the drain current of the second transistor irrespective of the load resistance value. The drain current of the first transistor is controlled by a driving circuit in accordance with a video signal and the drain current of the second transistor is caused to flow into an OLED, thereby controlling the OLED drive current and the luminance of the OLED. | 2013-03-28 |
20130075710 | ORGANIC ELECTRO-LUMINESCENCE DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - An OLED device is disclosed. The OLED device includes a first substrate including a driver element and a connection electrode connected to the driver element, a second substrate including an organic light emission diode element, a contact spacer electrically connected to the connection electrode, and a sealant disposed into a cavity which is formed by the first and second substrates, the connection electrode, the organic light emission diode element, and the contact space. Herein, the sealant is bonded to the contact spacer and the connection electrode and maintains the electric connection between the contact spacer and the connection electrode. In this manner, the driver element and the organic light emission diode element are protected from external oxygen and/or moisture, and the electric connection between the connection electrode and the contact spacer is reinforced. Accordingly, the contact defect between the connection electrode and the contact spacer can be prevented and the structural strength of the OLED device can be greatly improved. | 2013-03-28 |
20130075711 | THIN-FILM SEMICONDUCTOR DEVICE FOR DISPLAY APPARATUS, METHOD FOR MANUFACTURING THIN-FILM SEMICONDUCTOR DEVICE FOR DISPLAY APPARATUS, EL DISPLAY PANEL, AND EL DISPLAY APPARATUS - A thin-film semiconductor device for a display apparatus according to the present disclosure includes: a gate electrode above a substrate; a gate insulating film above the gate electrode; a semiconductor layer above the gate electrode; a first electrode above the semiconductor layer; a second electrode in a same layer as the first electrode; an interlayer insulating film covering the first electrode and the second electrode; a gate line above the interlayer insulating film; a first power supply line electrically connected to the second electrode and in a same layer as the second electrode; and a second power supply line in a same layer as the gate line. Furthermore, the gate electrode and the gate line are electrically connected via a first conductive portion, and the first power supply line and the second power supply line are electrically connected via a second conductive portion. | 2013-03-28 |
20130075712 | Light-Emitting Device - A light-emitting device includes a first electrode area on a substrate and a functional light-emitting layer on the first electrode area. A second electrode area is disposed on the functional light-emitting layer. A light outlet layer is disposed in a radiation path of the functional light-emitting layer. The light outlet layer incorporates a number of optical elements whose distribution and/or geometrical shape vary across a surface of the light outlet layer. | 2013-03-28 |
20130075713 | Light-Emitting Element, Light-Emitting Device, and Electronic Device - A light-emitting element disclosed in the present invention includes a light-emitting layer and a first layer between a first electrode and a second electrode, in which the first layer is provided between the light-emitting layer and the first electrode. The present invention is characterized by the device structure in which the first layer comprising a hole-transporting material is doped with a hole-blocking material or an organic compound having a large dipole moment. This structure allows the formation of a high performance light-emitting element with high luminous efficiency and long lifetime. The device structure of the present invention facilitates the control of the rate of the carrier transport, and thus, leads to the formation of a light-emitting element with a well-controlled carrier balance, which contributes to the excellent characteristics of the light-emitting element of the present invention. | 2013-03-28 |
20130075714 | POLYMER, POLYMER COMPOSITION AND ORGANIC LIGHT-EMITTING DEVICE - Light-emitting composition comprising a host polymer and a light emitting dopant wherein the host polymer comprises conjugating repeat units and non-conjugating repeat units in a backbone of the polymer and wherein: the conjugating repeat units provide at least one conjugation path between repeat units linked thereto; and the non-conjugating repeat units comprise an at least partially saturated ring having at least one ring atom that breaks any conjugation path between repeat units linked to the non-conjugating repeat unit such that a highest occupied molecular orbital level of the polymer is further from vacuum level by at least 0.1 eV and/or a lowest unoccupied molecular orbital level of the polymer is closer to vacuum level by at least 0.1 eV as compared to a polymer in which the non-conjugating repeat units are absent. | 2013-03-28 |
20130075715 | COMPOUND HAVING ACRIDAN RING STRUCTURE, AND ORGANIC ELECTROLUMINESCENT DEVICE - An organic compound with characteristics excelling in hole-injecting/transporting performance and having an electron blocking ability, a highly stable thin-film state, and excellent heat resistance is provided as material for an organic electroluminescent device of high efficiency and high durability, and the organic electroluminescent device of high efficiency and high durability is provided using this compound. The compound of a general formula (Chemical Formula 1) having a substituted acridan ring structure is used as a constituent material of at least one organic layer in the organic electroluminescent device that includes a pair of electrodes and one or more organic layers sandwiched between the pair of electrodes. | 2013-03-28 |
20130075716 | ORGANIC ELECTROLUMINESCENCE ELEMENT - An organic electroluminescence device ( | 2013-03-28 |
20130075717 | THIN FILM TRANSISTOR - A thin film transistor for a semiconductor device is disclosed. The thin film transistor comprises a substrate; a channel region formed on the substrate, the channel region being made of a first oxide semiconductor material; a source region and a drain region formed on each of lateral sides of the channel region, the source region and the drain region being made of a second oxide semiconductor material, the second oxide semiconductor material having a band gap smaller than a band gap of the first oxide semiconductor material; a gate electrode formed on the channel region; and a gate insulating layer sandwiched between the gate electrode and the channel region. | 2013-03-28 |
20130075718 | THIN FILM DOPED ZnO NEUTRON DETECTOR - A neutron detector having a scintillator layer comprising a thin film of doped zinc oxide is disclosed. The use of doped zinc oxide in such applications provides appliances and detectors that are rugged, tolerant to shocks and temperature variations, non-hygoroscopic, and suitable for outdoor applications. | 2013-03-28 |
20130075719 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE - According to one embodiment, a thin film transistor includes a substrate, a gate electrode, a first insulating film, an oxide semiconductor film, a second insulating film, a source electrode, and a drain electrode. The gate electrode is provided on a part of the substrate. The first insulating film covers the gate electrode. The oxide semiconductor film is provided on the gate electrode via the first insulating film. The second insulating film is provided on a part of the oxide semiconductor film. The source and drain electrodes are respectively connected to first and second portions of the oxide semiconductor film not covered with the second insulating film. The oxide semiconductor film includes an oxide semiconductor. Concentrations of hydrogen contained in the first and second insulating films are not less than 5×10 | 2013-03-28 |
20130075720 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR INCLUDING THE SAME, AND THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME - An oxide semiconductor includes a first material including at least one selected from the group consisting of zinc (Zn) and tin (Sn), and a second material, where a value acquired by subtracting an electronegativity difference value between the second material and oxygen (O) from the electronegativity difference value between the first material and oxygen (O) is less than about 1.3. | 2013-03-28 |
20130075721 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device including a transistor with large on-state current even when it is miniaturized. The transistor includes a pair of first conductive films over an insulating surface; a semiconductor film over the pair of first conductive films; a pair of second conductive films, with one of the pair of second conductive films and the other of the pair of second conductive films being connected to one of the pair of first conductive films and the other of the pair of first conductive films, respectively; an insulating film over the semiconductor film; and a third conductive film provided in a position overlapping with the semiconductor film over the insulating film. Further, over the semiconductor film, the third conductive film is interposed between the pair of second conductive films and away from the pair of second conductive films. | 2013-03-28 |
20130075722 | SEMICONDUCTOR DEVICE - A highly reliable structure for high-speed response and high-speed driving of a semiconductor device, in which on-state characteristics of a transistor are increased is provided. In the coplanar transistor, an oxide semiconductor layer, a source and drain electrode layers including a stack of a first conductive layer and a second conductive layer, a gate insulating layer, and a gate electrode layer are sequentially stacked in this order. The gate electrode layer is overlapped with the first conductive layer with the gate insulating layer provided therebetween, and is not overlapped with the second conductive layer with the gate insulating layer provided therebetween. | 2013-03-28 |
20130075723 | Semiconductor Device, Display Device, And Electronic Appliance - In a channel protected thin film transistor in which a channel formation region is formed using an oxide semiconductor, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region including nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphousness/non-crystals and microcrystals, where an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an n-type caused by entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented and a contact resistance with a source and drain electrodes can be reduced. | 2013-03-28 |
20130075724 | SEMICONDUCTOR ARRANGEMENT WITH AN INTEGRATED HALL SENSOR - A semiconductor arrangement includes a semiconductor body and a semiconductor device, the semiconductor device including first and second load terminals arranged distant to each other in a first direction of the semiconductor body and a load path arranged in the semiconductor body between the first and second load terminals. The semiconductor arrangement further includes at least one Hall sensor arranged in the semiconductor body distant to the semiconductor device in a second direction perpendicular to the first direction. The Hall sensor includes two current supply terminals and two measurement terminals. | 2013-03-28 |
20130075725 | ENHANCED WAFER TEST LINE STRUCTURE - A semiconductor wafer has a die area and a scribe area. A first dummy pad is formed in a first test line area of the scribe area and filled with a first material as part of a first metal layer. A first interlayer dielectric is formed over the first metal layer. A first interconnect pattern is formed in the die area and above the first interlayer dielectric, and a first trench pattern is formed in the first test line area of the scribe area and above the interlayer dielectric. The first interconnect pattern and the first trench pattern are filled with a second metal layer, and the first trench pattern is aligned above the first dummy pad. An enhanced test line structure including the first trench pattern and the first dummy pad is formed and probed in a back end of line (BEOL) process. | 2013-03-28 |
20130075726 | PROTECTION METHOD FOR AN ELECTRONIC DEVICE AND CORRESPONDING DEVICE - The semiconductor wafer for a silicon-on-insulator integrated circuit comprises an insulating region located between a first semiconductor substrate intended to receive the integrated circuit and a second semiconductor substrate containing at least one buried layer comprising at least one metal silicide. | 2013-03-28 |
20130075727 | SEMICONDUCTOR DEVICE - Electrode pads respectively have a probe region permitting probe contact and a non-probe region. In each of the electrode pads arranged zigzag in two or more rows, a lead interconnect for connecting another electrode pad with an internal circuit is not placed directly under the probe region but placed directly under the non-probe region. | 2013-03-28 |
20130075728 | ARRAY SUBSTRATE AND DISPLAY APPARATUS USING THE SAME - An array substrate includes scan lines and data lines defining pixel structures. Each pixel structure includes a first TFT, a second TFT and a pixel electrode. The first TFT includes a first gate connected to the scan line, a first source disposed above and partially overlapping the first gate, and a first drain disposed above the first gate. An end of the first source is connected to the data line. The first drain has at least one first concavity in which the first source is disposed partially. The second TFT includes a second gate connected to the scan line, a second source disposed above the second gate and connected to the first drain, and a second drain disposed above and partially overlapping the second gate. The second source has at least one second concavity in which the second drain is disposed partially. The pixel electrode connects to the second drain. | 2013-03-28 |
20130075729 | Fin-Based Bipolar Junction Transistor and Method for Fabrication - According to one exemplary embodiment, a fin-based bipolar junction transistor (BJT) includes a wide collector situated in a semiconductor substrate. A fin base is disposed over the wide collector. Further, a fin emitter and an epi emitter are disposed over the fin base. A narrow base-emitter junction of the fin-based BJT is formed by the fin base and the fin emitter and the epi emitter provides increased current conduction and reduced resistance for the fin-based BJT. The epi emitter can be epitaxially formed on the fin emitter and can comprise polysilicon. Furthermore, the fin base and the fin emitter can each comprise single crystal silicon. | 2013-03-28 |
20130075730 | VERTICAL PNP DEVICE IN A SILICON-GERMANIUM BICMOS PROCESS AND MANUFACTURING METHOD THEREOF - A vertical PNP device in a silicon-germanium (SiGe) BiCMOS process is disclosed. The device is formed in a deep N-well and includes a collector region, a base region and an emitter region. The collector region has a two-dimensional L-shaped structure composed of a lightly doped first P-type ion implantation region and a heavily doped second P-type ion implantation region. The collector region is picked up by P-type pseudo buried layers formed at bottom of the shallow trench field oxide regions. A manufacturing method of vertical PNP device in a SiGe BiCMOS process is also disclosed. The method is compatible with the manufacturing processes of a SiGe heterojunction bipolar transistor in the SiGe BiCMOS process. | 2013-03-28 |
20130075731 | MANUFACTURING METHOD FOR THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR MANUFACTURED BY THEM - Provided are a manufacturing method for a thin film transistor, and a thin film transistor manufactured by the manufacturing method. In the manufacturing method, a semiconductor layer and an insulating layer for stopping etching, which are sequentially stacked, are etched by dry etching and wet etching using a single photoresist pattern, and patterning the semiconductor layer and the insulating layer into a channel layer and an etch stop layer, respectively, thereby simplifying the manufacturing process of the thin film transistor. | 2013-03-28 |
20130075732 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A miniaturized transistor having high electric characteristics is provided with high yield. In a semiconductor device including the transistor, high performance, high reliability, and high productivity are achieved. In a semiconductor device including a transistor in which an oxide semiconductor film, a gate insulating film, and a gate electrode layer on side surfaces of which sidewall insulating layers are provided are stacked in this order, source and drain electrode layers are provided in contact with the oxide semiconductor film and the sidewall insulating layers. In a process for manufacturing the semiconductor device, a conductive film and an interlayer insulating film are stacked to cover the oxide semiconductor film, the sidewall insulating layers, and the gate electrode layer, and the interlayer insulating film and the conductive film over the gate electrode layer are removed by a chemical mechanical polishing method, so that the source and drain electrode layers are formed. | 2013-03-28 |
20130075733 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A minute transistor and the method of manufacturing the minute transistor. A source electrode layer and a drain electrode layer are each formed in a corresponding opening formed in an insulating layer covering a semiconductor layer. The opening of the source electrode layer and the opening of the drain electrode layer are formed separately in two distinct steps. The source electrode layer and the drain electrode layer are formed by depositing a conductive layer over the insulating layer and in the openings, and subsequently removing the part located over the insulating layer by polishing. This manufacturing method allows for the source electrode later and the drain electrode layer to be formed close to each other and close to a channel forming region of the semiconductor layer. Such a structure leads to a transistor having high electrical characteristics and a high manufacturing yield even in the case of a minute structure. | 2013-03-28 |
20130075734 | THIN FILM TRANSISTOR DEVICE WITH ACCURATELY ALIGNED ELECTRODE PATTERNS - An electronic device comprising an optically transparent substrate, a first electrode structure incorporating a channel, said channel being optically transparent and said electrode structure being optically opaque, at least one intermediate layer, and a photosensitive dielectric layer disposed above the at least one intermediate layer, the photosensitive dielectric layer incorporating a trench in a region essentially over said channel, the electronic device further comprising a further electrode, wherein the further electrode is located partially in the trench and partially beyond the trench such that portions of the further electrode that extend beyond the trench are separated from the at least one intermediate layer by the photosensitive dielectric layer. | 2013-03-28 |
20130075735 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A metal oxide layer is in contact with an interlayer insulating layer covering a transistor, and has a stacked-layer structure including a first metal oxide layer having an amorphous structure and a second metal oxide layer having a polycrystalline structure. In the first metal oxide layer, there are no crystal grain boundaries, and grid intervals are wide as compared to those in a metal oxide layer in a crystalline state; thus, the first metal oxide layer easily traps moisture between the lattices. In the second metal oxide layer having a polycrystalline structure, crystal parts other than crystal grain boundary portions have dense structures and extremely low moisture permeability. Thus, the structure in which the metal oxide layer including the first metal oxide layer and the second metal oxide layer is in contact with the interlayer insulating layer can effectively prevent moisture permeation into the transistor. | 2013-03-28 |
20130075736 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel includes: an substrate; a gate line and a gate pad portion disposed on the substrate; a gate insulating layer disposed on the gate line and the gate pad portion; a data line and a data pad portion disposed on the gate insulating layer; a gate assistance pad portion disposed at a position corresponding to the gate pad portion; a first insulating layer disposed on the data line and removed at the gate pad portion and the data pad portion; a first field generating electrode disposed on the first insulating layer; a second insulating layer disposed on the first field generating electrode and removed at the gate pad portion and the data pad portion; and a second field generating electrode disposed on the second insulating layer. The assistance gate pad portion and the gate insulating layer include a contact hole exposing the gate pad portion. | 2013-03-28 |
20130075737 | Organic Light-Emitting Display Apparatus - An organic light-emitting display apparatus having improved durability and image quality may include a substrate; a first electrode formed on the substrate; a first pixel definition layer formed to cover at least one lateral surface of the first electrode; a second pixel definition layer formed so as to be spaced apart from at least an upper surface of the first pixel definition layer; an intermediate layer formed on the first electrode and including an organic light-emitting layer; and a second electrode formed on the intermediate layer. | 2013-03-28 |
20130075738 | Display Device and Electronic Device Using the Same - A display device with a compensation circuit that applies a fixed potential constantly to a gate electrode of a driving transistor for a certain period is provided. Specifically, each difference voltage value between an anode and a cathode of the light emitting element is utilized in the case where the light emitting element emits light and emits no light. In a case where the light emitting element emits light, a potential of the gate electrode of the driving transistor is to be held; and in a case where the light emitting element emits no light, a potential that certainly turns off the gate electrode of the driving transistor is kept on applying to the gate electrode of the driving transistor. | 2013-03-28 |