12th week of 2011 patent applcation highlights part 8 |
Patent application number | Title | Published |
20110068265 | ELECTRODE UNIT AND CHARGED PARTICLE BEAM DEVICE - A high-resolution sample image is acquired by eliminating both of charge over an entire sample (global charge) and charge in a local region irradiated with a primary charged particle beam (local charge). An electrode unit ( | 2011-03-24 |
20110068266 | METHOD AND DEVICE FOR VISUALIZING DISTRIBUTION OF LOCAL ELECTRIC FIELD - A method which visualizes the distribution of a local electric field formed near a sample | 2011-03-24 |
20110068267 | Electron beam inspection method and electron beam inspection apparatus - An electron beam inspection apparatus images reflected electrons and cancels negative charging derived from electron-beam irradiation. Ultraviolet rays are irradiated and an irradiated area of ultraviolet rays is displayed as a photoelectron image. The photoelectron image and a reflected-electron image are displayed on a monitor while being superposed on each other, to easily grasp the positional relationship between the images and the difference in size between them. Specifically, the shape of the irradiated area of an electron beam includes the shape of the irradiated area of ultraviolet rays on a display screen. The intensity of the ultraviolet rays in the irradiated area of the electron beam is adjusted while the reflected-electron imaging conditions for the reflected-electron image are sustained. Moreover, an amount-of-ultraviolet ray adjustment mechanism is controlled on the monitor so that an amount of the ultraviolet rays is adjusted while observing a reflected-electron image obtained during ultraviolet irradiation. | 2011-03-24 |
20110068268 | TERAHERTZ IMAGING METHODS AND APPARATUS USING COMPRESSED SENSING - A system, method and an apparatus for terahertz (THz) imaging based on compressed sensing using a unified sensing mask are provided herein. The system may include a THz radiation transmitter, a window, a unified mask, a THz radiation focusing lens, a THz radiation detector and a processor to generate an image using compressed sensing. The unified mask includes a series of individual masks for filtering radiation directed at the individual masks. Each of the individual masks defines a binary two-dimensional matrix of cells that are either a radiation blocking cell or a radiation passing cell. The unified mask has a first length in a first direction. The window has a terahertz radiation blocking border that defines a terahertz radiation passing opening. The opening has a second length aligned in the first direction and the second length is less than the first length so that the unified mask is movable relative to the window to a plurality of different positions and the opening operates to select one of the individual masks at each of the positions. | 2011-03-24 |
20110068269 | Infrared Camera for Locating a Target Using at Least One Shaped Light Source - An infrared camera including optics and a detector sensitive to infrared radiation is used in conjunction with at least one light source, such as a laser, to locate a reference point on a target. Two intersecting line segments are produced by the one light source or a combination of two light sources to locate the reference point on the target. The infrared camera would display both an infrared image as well as a visible image which can be merged onto a single display. The teaching of the present invention could also be used to determine the distance to the target as well as the area of the target. | 2011-03-24 |
20110068270 | APPARATUS FOR GENERATING/DETECTING THZ WAVE AND METHOD OF MANUFACTURING THE SAME - Provided are an apparatus for generating/detecting terahertz wave and a method of manufacturing the same. The apparatus includes a substrate, a photo conductive layer, a first electrode and a second electrode, and a lens. The photo conductive layer is formed on an entire surface of the substrate. The first electrode and a second electrode are formed on the photo conductive layer. The first and second electrodes are spaced from each other by a certain gap. The lens is formed on the first and second electrodes. The lens is filled in the gap between the first and second electrodes. | 2011-03-24 |
20110068271 | EMISSIVITY ENHANCED MID IR SOURCE - An infrared (IR) source apparatus that includes a desired infrared source element coupled to an insulating housing so to minimize overall source inefficiency at desired optical bandwidths is introduced. The insulation itself is machined or configured in a way so that the infrared source element is in contact with a designed cavity in the insulation so that the IR source image becomes the average of the insulation material and the infrared element. Such an arrangement of the present invention increases the emissivity of the IR source below about 1500 wave numbers, more often, below about 1100 wave numbers, and even more particularly, at about 1079 wave numbers. Accordingly, the combined emissivity of the infrared source and the insulation substantially enhances spectral emission and eliminates or reduces spectral artifacts from the formation of oxides on the infrared source surfaces. | 2011-03-24 |
20110068272 | DEVICE AND METHOD FOR DETECTING INFRARED RADIATION THROUGH A RESISTIVE BOLOMETER MATRIX - An infrared radiation detection device comprising: a substrate; a matrix of at least one line of elements for detecting said radiation, each comprising a resistive imaging bolometer, said matrix being formed above the substrate; means for reading the bolometers of the matrix, means for measuring the temperature in at least one point of the substrate; and means for correcting the signal formed from each bolometer as a function of the temperature measured in at least one point of the substrate. The correcting means are capable of correcting the signal formed from the imaging bolometer by means of a predetermined physical model of the temperature behaviour of said signal. | 2011-03-24 |
20110068273 | Device and Method for Detecting High Energy Radiation Through Photon Counting - The present invention relates to a radiation-detecting device and an associated detection method. The detection device includes a scintillation crystal and an avalanche photodiode. The surface of the scintillation crystal is coated with a high-reflection layer. When ionizing radiation irradiates the scintillation crystal, the crystal emits luminescence, which passes through or is reflected by the high-reflection layer at least once within the scintillation crystal before it is received by the avalanche photodiode, generating a detection signal. | 2011-03-24 |
20110068274 | USING UV LIGHT SOURCE FOR SELF TESTING GAS FILLED GAMMA AND NEUTRON DETECTORS - An apparatus for detecting at least one of neutron and gamma ray reception and outputting a signal indicative of the reception. A detector is responsive to the at least one of neutron and gamma ray reception. The detector has a cathode, an anode separated by a space from the cathode, and a gas within the separating space. Charge is generated within the gas upon the at least one of neutron and gamma ray reception at the cathode and the charge passes to the anode as a detection. A processing arrangement is operatively connected to the anode for outputting the signal indicative of the detection. A light irradiation arrangement for introducing a light irradiation causes charge within the gas that replicates the charge generated upon detection and that causes output of a signal that replicates the signal indicative of the detection. | 2011-03-24 |
20110068275 | NEUTRON SENSITIVITY USING DETECTOR ARRAYS - A detector array includes a plurality of neutron detectors. Each neutron detector includes an anode and a cathode including at least some B-10 boron. The array includes at least one gamma detector engaged against at least one neutron detector within the array. A detector array includes a plurality of detectors engaged against each other. The plurality of detectors includes at least one neutron detector and at least one gamma detector. In one specific example, the at least one neutron detector contains B-10. An associated method adjusts information concerning a value of neutron detection. | 2011-03-24 |
20110068276 | MULTIPLE BEAM CHARGED PARTICLE OPTICAL SYSTEM - The invention relates to a multiple beam charged particle optical system comprising:
| 2011-03-24 |
20110068277 | BEAM CONTROL ASSEMBLY FOR RIBBON BEAM OF IONS FOR ION IMPLANTATION - A beam control assembly to shape a ribbon beam of ions for ion implantation includes a first bar, second bar, first coil of windings of electrical wire, second coil of windings of electrical wire, first electrical power supply, and second electrical power supply. The first coil is disposed on the first bar. The first coil is the only coil disposed on the first bar. The second bar is disposed opposite the first bar with a gap defined between the first and second bars. The ribbon beam travels between the gap. The second coil is disposed on the second bar. The second coil is the only coil disposed on the second bar. The first electrical power supply is connected to the first coil without being electrically connected to any other coil. The second electrical power supply is connected to the second coil without being electrically connected to any other coil. | 2011-03-24 |
20110068278 | FLUORESCENCE OBSERVATION APPARATUS - To accurately obtain fluorescence intensity in a variable passband. Provided is a fluorescence observation apparatus including an excitation light source that emits excitation light; a Fabry-Perot resonator including a variable passband in which the wavelength of light that passes therethrough changes with changes in distance between the surfaces of optical members opposing each other with a distance therebetween, a fixed passband in which the wavelength of light that passes therethrough does not change irrespective of changes in the distance between the surfaces, and a transition band therebetween; an excitation-light cut filter that blocks passage of the excitation light; a band cut filter having a cut-off band including the transition band and not including the wavelength of the excitation light; and a photodetector that detects fluorescence that has passed through the Fabry-Perot resonator, the excitation-light cut filter, and the band cut filter. | 2011-03-24 |
20110068279 | ULTRA DARK FIELD MICROSCOPE - A fluorescence microscope includes a nearly monochromatic light source, a Brewster angle wedge, and an optical system for irradiating a sample with a light beam from the light source and directing fluorescence light from said sample onto the Brewster angle wedge. Collection optics are provided for focusing a hyper-spectral, wide angle and dark field image of the sample from the Brewster angle wedge onto recording optics. | 2011-03-24 |
20110068280 | DEVICE AND METHOD FOR SPATIAL RECONSTRUCTING OF FLUORESCENCE MAPPING - The invention concerns a method for locating at least one fluorophore or at least one absorber in a diffusing medium, using at least one excitation radiation and at least one fluorescence detector (Φ | 2011-03-24 |
20110068281 | CHARGED PARTICLE BEAM DRAWING APPARATUS AND PROXIMITY EFFECT CORRECTION METHOD THEREOF - A charged particle beam drawing apparatus forms a map having meshes, forms representative figures, area of each representative figure in each mesh being equal to gross area of figures in each mesh, and calculates a proximity effect correction dose of the charged particle beam in each mesh on the basis of area of each representative figure in each mesh. If it is necessary to change the proximity effect correction dose of the charged particle beam for drawing at least one pattern corresponding to at least one figure, the charged particle beam drawing apparatus changes area of the at least one figure before the representative figures are formed by a representative figure forming portion, and changes the proximity effect correction dose of the charged particle beam for drawing the at least one pattern corresponding to the at least one figure, calculated by a proximity effect correction dose calculating portion. | 2011-03-24 |
20110068282 | Plasma source of directed beams and application thereof to microlithography - A method for generating radiation in a range of desired wavelengths in a direction of emission is provided. According to the method, initial radiation is produced by a radiation source, the wavelengths thereof including the desired range, and the initial radiation is filtered in such a way as to substantially eliminate the initial radiation beams having a wavelength outside the desired range. The inventive method is characterized in that the filtering is carried out by setting up a controlled distribution of the refractive index of the beams in a control region through which the initial radiation passes, in such a way as to selectively deviate the beams of the initial radiation according to the wavelength thereof and to recover the beams having desired wavelengths. The invention also relates to an associated device. | 2011-03-24 |
20110068283 | ELECTROMAGNETIC WAVE ABSORPTION COMPONENT AND DEVICE - The invention provides electromagnetic wave absorption components and device. The electromagnetic wave absorption component includes an electromagnetic shield constituted by at least one material selected from the group consisting of a carbon nanocoil and a carbon fiber, and a solidified layer formed of a mixture of a solidifiable material and the electromagnetic shield after solidification. Another embodiment of the electromagnetic wave absorption component includes an electromagnetic shield constituted by at least one material selected from the group consisting of a carbon nanocoil and a carbon fiber, and a solidified layer, formed by solidifying a solidifiable material, applicable to encapsulating the electromagnetic shield. Further, the electromagnetic wave absorption device is formed by stacking at least two of the above-mentioned electromagnetic wave absorption components. | 2011-03-24 |
20110068284 | Control Valve - The control valve according to the invention is for use in liquid carrying systems. It comprises a valve housing ( | 2011-03-24 |
20110068285 | Automatic Increased-Suction Relief Apparatus - An automatic vacuum-relief apparatus for liquid suction systems includes a vessel defining a chamber filled with liquid in communication with a liquid flow line, a rotary shaft extending through the chamber to support a valve device adjacent to the liquid flow line and to move the valve device to open a relief-air flow channel to relieve increased suction caused by inlet blockage, and a piston on the rotary shaft responsive to suction increases within the liquid flow line and chamber to actuate shaft rotation. The valve device, chamber and relief-air flow channel are configured and arranged to cause a spurt of liquid from the chamber into the inlet while the valve device is moving from its isolating position toward its opening position upon inlet blockage, whereby the spurt of liquid pushes the blockage away from the inlet and the relief air reduces the suction. The valve includes a liquid-flow barrier secured with respect to the liquid flow line such that the barrier is in an open position allowing flow of liquid from the inlet to the outlet during normal operation and in a closed position isolating the inlet from the outlet in response to suction increases upon inlet blockage. | 2011-03-24 |
20110068286 | SOLENOID ON-OFF VALVE - In a solenoid on-off valve | 2011-03-24 |
20110068287 | GATE VALVE ACTUATOR AND METHOD - A gate valve actuator including a stem that is movable linearly in an actuator housing connectable to the gate valve. The stem acts on the gate valve to shift the gate valve between open and closed positions, respectively. The stem is driven by a motor in a first direction into a steady state operation position. In the position the stem is biased in a second opposite direction towards a shutdown position by a spring member acting on the stem. A trigger mechanism is arranged for holding the spring member in a compressed state. The trigger mechanism includes an electrically controllable trigger that is arranged for release of the spring member in result of de-energizing the electrically controlled trigger. A method for shifting a gate valve between a steady state operation mode and a shutdown mode utilizing the gate valve actuator. | 2011-03-24 |
20110068288 | VALVE BONNET ASSEMBLY - The valve bonnet assembly ( | 2011-03-24 |
20110068289 | LIQUID COMPOSITION COMPRISING POLYMER CHAINS AND PARTICLES OF AN INORGANIC MATERIAL IN A LIQUID - The invention relates to a liquid composition comprising polymer chains and particles of an inorganic material in a liquid, an article comprising said liquid composition, a gel obtained from said liquid composition, an article comprising said gel, and the use of said liquid composition. The liquid composition comprises polymer chains and particles of an inorganic material in a liquid, wherein the polymer chains are linked to particles of the inorganic material by means of a functional group that is present in the polymer chains, wherein the polymer used has a lower critical solution temperature in the liquid used, and wherein the liquid composition exhibits thermo-induced gelation. | 2011-03-24 |
20110068290 | CHEMICAL MODULATION OF ELECTRONIC AND MAGNETIC PROPERTIES OF GRAPHENE - Compounds, compositions, systems and methods for the chemical and electrochemical modification of the electronic structure of graphene and especially epitaxial graphene (EG) are presented. Beneficially, such systems and methods allow the large-scale fabrication of electronic EG devices. Vigorous oxidative conditions may allow substantially complete removal of the EG carbon atoms and the generation of insulating regions; such processing is equivalent to that which is currently used in the semiconductor industry to lithographically etch or oxidize silicon and thereby define the physical features and electronic structure of the devices. However graphene offers an excellent opportunity for controlled modification of the hybridization of the carbon atoms from sp | 2011-03-24 |
20110068291 | Metallized nanotube polymer composite (MNPC) and methods for making same - A novel method to develop highly conductive functional materials which can effectively shield various electromagnetic effects (EMEs) and harmful radiations. Metallized nanotube polymer composites (MNPC) are composed of a lightweight polymer matrix, superstrong nanotubes (NT), and functional nanoparticle inclusions. MNPC is prepared by supercritical fluid infusion of various metal precursors (Au, Pt, Fe, and Ni salts), incorporated simultaneously or sequentially, into a solid NT-polymer composite followed by thermal reduction. The infused metal precursor tends to diffuse toward the nanotube surface preferentially as well as the surfaces of the NT-polymer matrix, and is reduced to form nanometer-scale metal particles or metal coatings. The conductivity of the MNPC increases with the metallization, which provides better shielding capabilities against various EMEs and radiations by reflecting and absorbing EM waves more efficiently. Furthermore, the supercritical fluid infusion process aids to improve the toughness of the composite films significantly regardless of the existence of metal. | 2011-03-24 |
20110068292 | SYNTHETIC REFRIGERATION OIL COMPOSITION FOR HFC APPLICATIONS - Novel refrigeration compositions comprising at least one ester of a hydroxycarboxylic acid which can have a chain length in the range of from 8 to 22 carbon atoms. The composition can contain a carrier fluid or base oil selected from alkylbenzenes, alkylated naphthenics, polyalkylene glycols, polyvinylethers, polyalphaolefins, mineral oils, polyol esters, and combinations thereof, providing improved fluidity and heat transfer, and enhanced oil return. A method of making a refrigeration composition by preparing at least one ester by esterifying a first component comprising at least one hydroxycarboxylic acid with a second component comprising at least one alcohol and combining the at least one ester with a base oil selected from the group consisting of alkylbenzenes, alkylated naphthenics, polyalkylene glycols, polyvinylethers, polyalphaolefins, mineral oils, polyol esters, and combinations thereof. | 2011-03-24 |
20110068293 | POSITIVE ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY AND LITHIUM SECONDARY BATTERY - The invention provides a polyanion-based positive active material which can improve storage stability (especially, high temperature storage stability), charge and discharge cycle performance and the like of a lithium secondary battery, and a lithium secondary battery using the same. The positive active material for a lithium ion secondary battery contains lithium iron cobalt phosphate represented by the general formula: Li | 2011-03-24 |
20110068294 | COMPOSITE ELECTRODE MATERIAL - The invention relates to a composite electrode material consisting of a carbon coated complex oxide, fibrous carbon and a binder. Said material is prepared by a method which comprises co-grinding an active electrode material and fibrous carbon, and adding a binder to the co-grinded mixture to lower the viscosity of the mixture. The fibrous carbon is preferably vapor grown carbon fibers. | 2011-03-24 |
20110068295 | FERRIC PHOSPHATE AND METHODS OF PREPARATION THEREOF - High-purity crystalline ferric phosphate material with desirable characteristics for use in synthesis of nano-sized LFP cathode material are described. The ferric phosphate dihydrate material has as disclosed herein has a molar ratio of phosphorous to iron is from about 1.001 to about 1.05, a surface area of from about 25 m | 2011-03-24 |
20110068296 | Manganese Phosphates and Related Electrode Active Materials - The invention provides electrode active materials comprising lithium or other alkali metals, manganese, a +3 oxidation state metal ion, and optionally other metals, and a phosphate moiety. Such electrode active materials include those of the formula: | 2011-03-24 |
20110068297 | CATHODE MATERIALS FOR SECONDARY (RECHARGEABLE) LITHIUM BATTERIES - The invention relates to materials for use as electrodes in an alkali-ion secondary (rechargeable) battery, particularly a lithium-ion battery. The invention provides transition-metal compounds having the ordered-olivine, a modified olivine, or the rhombohedral NASICON structure and the polyanion (PO | 2011-03-24 |
20110068298 | ELECTRODE MATERIAL WITH ENHANCED IONIC TRANSPORT PROPERTIES - Materials useful as electrodes for lithium batteries have very good electronic and ionic conductivities. They are fabricated from a starting mixture which includes a metal, a phosphate ion, and an additive which enhances the transport of lithium ions in the resultant material. The mixture is heated in a reducing environment to produce the material. The additive may comprise a pentavalent metal or a carbon. In certain embodiments the material is a two-phase material. Also disclosed are electrodes which incorporate the materials and lithium batteries which incorporate those electrodes. | 2011-03-24 |
20110068299 | METHOD OF FABRICATING NANO COMPOSITE POWDER CONSISTING OF CARBON NANOTUBE AND METAL - The present invention features in preferred aspects a method of fabricating nano composite powder consisting of carbon nanotubes and metal matrix powder is disclosed. The method includes a low-speed milling process of milling and mixing the carbon nanotubes and the metal matrix powder, and a high-speed milling process of milling the carbon nanotubes and the metal matrix powder which are homogenously mixed in the low-speed milling process to homogenously disperse the carbon nanotubes in the metal matrix powder. In certain preferred aspects, the method can prevent damage of the carbon nanotube and can homogenously disperse the carbon nanotubes in the metal matrix. | 2011-03-24 |
20110068300 | WATER-ABSORBING RESIN COMPOUND - The object of the present invention is to provide a water-absorbing resin compound, wherein the water-absorbing resin compound can retain antibacterial properties of an antibacterial metal to suppress the emission of unpleasant odors even when an organic material exists in a system in the case of using an eluting-type antibacterial agent. Thus, the present invention relates to a water-absorbing resin compound, which comprises a water-absorbing resin, an antibacterial agent having a porous material incorporating an antibacterial metal, and a metal chelating agent. Further, the present invention also relates to an absorbing material, which comprises a water-absorbing resin compound of the present invention, and a hydrophilic fiber as well as an absorbing product, which comprises a liquid-permeable sheet and a liquid-non-permeable sheet, and an absorbing material comprising a water-absorbing resin compound of the present invention, and a hydrophilic fiber between the liquid-permeable sheet and the liquid-non-permeable sheet. | 2011-03-24 |
20110068301 | LIQUID CRYSTAL ALIGNING AGENT, METHOD OF PRODUCING A LIQUID CRYSTAL ALIGNMENT FILM AND LIQUID CRYSTAL DISPLAY DEVICE - The present invention relates to a liquid crystal aligning agent which contains a reaction product of at least one selected from the group consisting of a polysiloxane having a structure represented by the following formula (S-1), a hydrolysate thereof and a condensate of the hydrolysate and a compound represented by the following formula (1): | 2011-03-24 |
20110068302 | SHAPED ARTICLE - The present invention provides a molded multi-layer body having a layer of liquid crystal polymer and is excellent in strength, which contains two or more thermoplastic resin layers and one or more adhesive layers, wherein at least one of the thermoplastic resin layers is a layer (A) containing liquid crystal polymer, at least one of the thermoplastic resin layers is a layer (B) containing thermoplastic resin other than the liquid crystal polymer, and the layer (A) and the layer (B) are stacked via an adhesive layer (C) containing an epoxy group-containing ethylene copolymer consisting of:
| 2011-03-24 |
20110068303 | SUBMICRONIC BARIUM AND MAGNESIUM ALUMINATE PHOSPHORS - Submicronic barium and magnesium aluminates, useful as phosphors, are in the form of a liquid-phase suspension of substantially monocrystalline particles having an average particle size ranging from 80 to 400 nm; such aluminates are prepared by a process that includes: providing a liquid mixture containing compounds of aluminum and of other elements that are part of the aluminate composition; drying the mixture by atomization; calcining the dried product in a reducing atmosphere and wet-grinding this product. | 2011-03-24 |
20110068304 | Conjugated Polymers and Blends Containing Carbazole, Representation and Use Thereof - The present invention relates to conjugated polymers comprising specific carbazole structural units. The materials according to the invention display steeper current-voltage curves and are therefore better suited to use in organic light-emitting diodes than are comparative polymers which do not contain these units. | 2011-03-24 |
20110068305 | Polymerizable composition and its uses - The present invention provides a polymerizable composition, comprising, based on the total weight of the polymerizable composition:
| 2011-03-24 |
20110068306 | Ionic compound, anti-static pressure-sensitive adhesive and polarizer comprising the same - An ionic compound has the formula (I): | 2011-03-24 |
20110068307 | Colored composite microparticles, process for producing the colored composite microparticles, colorant, color filter and ink for ink-jet printing - There are provided colored composite microparticles having a fine primary particle diameter and exhibiting a high tinting strength, an excellent dispersibility and an excellent light fastness; a process for producing the colored composite microparticles; and a dispersion of the colored composite microparticles. The colored composite microparticles are composite particles comprising silica and an organic pigment in which the silica is enclosed in the organic pigment and contained in an amount of 0.001 to 9% by weight (calculated as Si) based on the weight of the composite particles. The coloring composition for color filters is prepared by dispersing a colorant for color filters comprising the colored composite microparticles in a coloring composition base material, whereas the ink for ink-jet printing is prepared by dispersing a colorant for inks for ink-jet printing comprising the colored composite microparticles in an ink base solution. The colored composite microparticles have a high tinting strength and are excellent in dispersibility and light fastness, and therefore, can be suitably used in various applications such as ordinarily used paints, printing inks, etc., irrespective of an aqueous system or a solvent system. | 2011-03-24 |
20110068308 | INFRA-RED REFLECTIVE MATERIAL AND PRODUCTION METHOD THEREOF, AND PAINT AND RESIN COMPOSITION CONTAINING THE SAME - An infra-red reflective material is a perovskite-like multiple oxide which includes at least an alkaline-earth metal and at least one type of element selected from a group of titanium, zirconium and niobium, and further, if necessary, manganese and/or iron, an element belonging to the IIIa group of the periodic table such as aluminum and gallium, etc., or zinc, etc., has sufficient infra-red reflective power, is excellent in thermal stability and heat resistance, and does not raise concerns on safety and environmental issues. The infra-red reflective material can be produced by, for example, mixing an alkaline-earth metal compound and a titanium compound and further, if necessary, a manganese compound and/or an iron compound, a compound belonging to the IIIa group of the periodic table, or a zinc compound in predetermined amounts, and firing the mixture. The produced multiple oxide is powdery and can be mixed with paint or a resin composition so as to be used for various purposes such as painting a roof or an outside wall of a building, a road, or a foot path in order to reduce the heat island phenomenon. | 2011-03-24 |
20110068309 | BATTERY REMOVAL APPARATUS FOR A VEHICLE, IN PARTICULAR AN ELECTRIC INDUSTRIAL TRUCK, AND A LOCKING DEVICE FOR SUCH A BATTERY REMOVAL APPARATUS - The invention relates to a battery removal apparatus for an electric industrial truck, which has a battery compartment ( | 2011-03-24 |
20110068310 | Apparatus for Stretching Carpet - A carpet stretching apparatus is provided. The apparatus can comprise a rail having a fixed pin block operatively disposed at one end thereof, with the pin block configured with a plurality of pins configured to engage the backing of the carpet thereby enabling the pin block to grip or otherwise releasably attach to the carpet. The apparatus can further comprise a travelling mechanism disposed on the rail, the mechanism further comprising a second pin block disposed thereon that can work in cooperation with the fixed pin block. When the travelling mechanism is operated, the pin blocks work in cooperation to stretch or move the carpet. | 2011-03-24 |
20110068311 | PULLEY APPARATUS - A pulley apparatus ( | 2011-03-24 |
20110068312 | NONVOLATILE MEMORY DEVICE - According to one embodiment, a nonvolatile memory device comprises a plurality of first lines, a plurality of second lines, and memory cells. Each of the memory cells comprise a variable resistor, and a diode. The variable resistor includes a first metal oxide film and is configured to reversibly change resistance value by energy application. The diode includes a second metal oxide film and is connected in series to the variable resistor. The first metal oxide film has at least one of dielectric constant lower than that of the second metal oxide film and physical film thickness greater than that of the second metal oxide film. | 2011-03-24 |
20110068313 | MEMORY DEVICES WITH ENHANCED ISOLATION OF MEMORY CELLS, SYSTEMS INCLUDING SAME AND METHODS OF FORMING SAME - Memory cells of a memory device including a variable resistance material have a cavity between the memory cells. Electronic systems include such memory devices. Methods of forming a memory device include providing a cavity between memory cells of the memory device. | 2011-03-24 |
20110068314 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device of an embodiment includes: a cathode electrode formed of a p-type semiconductor material; a resistance change film being in contact with the cathode electrode; and an anode electrode being contact with the resistance change film. | 2011-03-24 |
20110068315 | SEMICONDUCTOR MEMORY DEVICE INCLUDING RESISTANCE-CHANGE MEMORY - A semiconductor memory device includes first lines and second lines and a memory cell array. The first lines and second lines are formed to intersect each other. The memory cell array includes memory cells arranged at intersections of the first lines and the second lines and each formed by connecting a rectification element and a variable-resistance element in series. The rectification element includes a first semiconductor region having an n-type and a second semiconductor region having a p-type. At least a portion of the first semiconductor region is made of a silicon-carbide mixture (Si | 2011-03-24 |
20110068316 | NONVOLATILE MEMORY ELEMENT AND NONVOLATILE MEMORY DEVICE - According to one embodiment, a nonvolatile memory device includes a plurality of nonvolatile memory elements each of that includes a resistance change film. The resistance change film is capable of recording information by transitioning between a plurality of states having different resistances in response to at least one of a voltage applied to the resistance change film or a current passed through the resistance change film, and the resistance change film includes an oxide containing at least one element selected from the group consisting of Hf, Zr, Ni, Ta, W, Co, Al, Fe, Mn, Cr, and Nb. An impurity element contained in the resistance change film is at least one element selected from the group consisting of Mg, Ca, Sr, Ba, Sc, Y, La, V, Ta, B, Ga, In, Tl, C, Si, Ge, Sn, Pb, N, P, As, Sb, Bi, S, Se, and Te, and the impurity element has an absolute value of standard Gibbs energy of oxide formation larger than an absolute value of standard Gibbs energy of oxide formation of the element contained in the oxide. | 2011-03-24 |
20110068317 | Phase change memory devices, methods of manufacturing and methods of operating the same - A phase change memory device includes a switching device and a storage node connected to the switching device. The storage node includes a bottom stack, a phase change layer disposed on the bottom stack and a top stack disposed on the phase change layer. The phase change layer includes a unit for increasing a path of current flowing through the phase change layer and reducing a volume of a phase change memory region. The area of a surface of the unit disposed opposite to the bottom stack is greater than or equal to the area of a surface of the bottom stack in contact with the phase change layer. | 2011-03-24 |
20110068318 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a semiconductor memory device includes a substrate, an upper-layer wire provided on the substrate, a lower-layer wire provided on the substrate, a memory cell located at an intersection of the upper-layer wire and the lower-layer wire and includes a diode and a storage layer, a conductive layer located between the upper-layer wire and the memory cell in a direction perpendicular to the substrate surface, and an interlayer insulating film provided between memory cells. The position of an interface between the upper-layer wire and the interlayer insulating film is lower than a top surface of the conductive layer. | 2011-03-24 |
20110068319 | INFORMATION RECORDING AND REPRODUCING DEVICE - According to one embodiment, an information recording and reproducing device includes a stacked body. The stacked body includes a first layer, a second layer and a recording layer provided between the first layer and the second layer. The recording layer includes a phase-change material and a crystal nucleus. The phase-change material is capable of reversely changing between a crystal state and an amorphous state by a current supplied via the first layer and the second layer. The crystal nucleus is provided in contact with the phase-change material and includes a crystal nucleus material having a crystal structure identical to a crystal structure of the crystal state of the phase-change material, and a crystal nucleus coating provided on a surface of the crystal nucleus material and having a composition different from a composition of the crystal nucleus material. | 2011-03-24 |
20110068320 | QUANTUM WELL GRAPHENE STRUCTURE - An electronic device employing a graphene layer as a charge carrier layer. The graphene layer is sandwiched between layers that are constructed of a material having a highly ordered crystalline structure and a high dielectric constant. The highly ordered crystalline structure of the layers surrounding the graphene layer has low density of charged defects that can lead to scattering of charge carriers in the graphene layer. The high dielectric constant of the layers surrounding the graphene layer also prevents charge carrier scattering by minimizing interaction between the charge carriers and the charged defects in the surrounding layers. An interracial layer constructed of a thin, non-polar, dielectric material can also be provided between the graphene layer and each of the highly ordered crystalline high dielectric constant layers to minimize charge carrier scattering in the graphene layer through remote interfacial phonons. | 2011-03-24 |
20110068321 | Semiconductor nanoparticle-based materials - In various embodiment, a primary particle includes a primary matrix material containing a population of semiconductor nanoparticles, with each primary particle further comprising an additive to enhance the physical, chemical and/or photo-stability of the semiconductor nanoparticles. A method of preparing such particles is described. Composite materials and light-emitting devices incorporating such primary particles are also described. | 2011-03-24 |
20110068322 | Semiconductor Nanoparticle-Based Materials - In various embodiments, the present invention relates to a plurality of coated primary particles, each primary particle including a primary matrix material and containing a population of semiconductor nanoparticles, wherein each primary particle is provided with a separate layer of a surface coating material. Various methods of preparing such particles are described. Composite materials and light-emitting devices incorporating such primary particles are also described. | 2011-03-24 |
20110068323 | Local Bottom Gates for Graphene and Carbon Nanotube Devices - Transistor devices having nanoscale material-based channels and techniques for the fabrication thereof are provided. In one aspect, a transistor device includes a substrate; an insulator on the substrate; a gate embedded in the insulator with a top surface of the gate being substantially coplanar with a surface of the insulator; a dielectric layer over the gate and insulator; a channel comprising a carbon nanostructure material formed on the dielectric layer over the gate, wherein the dielectric layer over the gate and the insulator provides a flat surface on which the channel is formed; and source and drain contacts connected by the channel. A method of fabricating a transistor device is also provided. | 2011-03-24 |
20110068324 | N-TYPE TRANSISTOR, PRODUCTION METHODS FOR N-TYPE TRANSISTOR AND N-TYPE TRANSISTOR-USE CHANNEL, AND PRODUCTION METHOD OF NANOTUBE STRUCTURE EXHIBITING N-TYPE SEMICONDUCTOR-LIKE CHARACTERISTICS - An object of the present invention is to provide a new n-type transistor, different from the prior art, using a channel having a nanotube-shaped structure, and having n-type semiconductive properties. To realize this, a film of a nitrogenous compound | 2011-03-24 |
20110068325 | Diodes, and Methods of Forming Diodes - Some embodiments include methods of forming diodes in which a first electrode is formed to have a pedestal extending upwardly from a base. At least one layer is deposited along an undulating topography that extends across the pedestal and base, and a second electrode is formed over the least one layer. The first electrode, at least one layer, and second electrode together form a structure that conducts current between the first and second electrodes when voltage of one polarity is applied to the structure, and that inhibits current flow between the first and second electrodes when voltage having a polarity opposite to said one polarity is applied to the structure. Some embodiments include diodes having a first electrode that contains two or more projections extending upwardly from a base, having at least one layer over the first electrode, and having a second electrode over the at least one layer. | 2011-03-24 |
20110068326 | SCHOTTKY BARRIER TUNNEL TRANSISTOR AND METHOD FOR FABRICATING THE SAME - A Schottky barrier tunnel transistor includes a gate electrode, and source and drain regions. The gate electrode is formed over a channel region of a substrate to form a Schottky junction with the substrate. The source and drain regions are formed in the substrate exposed on both sides of the gate electrode. | 2011-03-24 |
20110068327 | ORGANIC ELECTROLUMINESCENCE ELEMENT INCLUDING METAL DOPED MOLYBDENUM OXIDE LAYER AND METHOD FOR PRODUCING THE SAME - It is an object of the present invention to provide an organic electroluminescence element which can be easily produced and has a good light-emitting property and a good lifetime property, and a method for producing the same. | 2011-03-24 |
20110068328 | HALOGEN-CONTAINING PERYLENETETRACARBOXYLIC ACID DERIVATIVES AND THE USE THEREOF - The invention relates to compounds of the formula (I) | 2011-03-24 |
20110068329 | OPTOELECTRONIC DEVICE - The present invention relates to an opto-electronic device comprising a first layer and a second layer on a substrate, characterised in that the first layer comprises an electrode material containing fluorine-containing groups and the second layer comprises a polymer containing fluorine-containing groups, where an adhesive fluorine-fluorine interaction exists between some of the fluorine-containing groups of the first layer and of the second layer. The invention furthermore relates to the use of the opto-electronic device and to a process for the production of the opto-electronic device according to the invention. | 2011-03-24 |
20110068330 | LIGHT EMITTING DEVICE - According to one embodiment, a light emitting device includes a first reflective layer, a first light emitting element, a second reflective layer and a second light emitting element stacked in this order. The first reflective layer is configured to reflect light in a first wavelength band. The first light emitting element is configured to emit the light in the first wavelength band. The second reflective layer has transmittance for the light in the first wavelength band being higher than transmittance for light in a second wavelength band different from the first wavelength band. The second light emitting element is configured to emit the light in the second wavelength band. | 2011-03-24 |
20110068331 | ORGANIC LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - An organic light emitting device comprises a first substrate, a first electrode formed on the first substrate, a hole transporting layer formed on the first electrode, a light emitting layer formed on the hole transporting layer, a second electrode formed on the light emitting layer; and a mixture layer formed between the hole transporting layer and the light emitting layer, where the mixture layer including a hole transporting functioning material, wherein the hole transporting functioning material and the light emitting functioning material have concentration gradient respectively. | 2011-03-24 |
20110068332 | Hybrid Dielectric Material for Thin Film Transistors - Thin-film transistors are made using a hybrid silica-silicone material as an insulating material. The hybrid silica-silicone material may be deposited by plasma-enhanced chemical vapor deposition from siloxanes and oxygen. These hybrid materials may be employed as the gate dielectric, as a subbing layer, and/or as a back channel passivating layer. The transistors may be made in any conventional TFT geometry. | 2011-03-24 |
20110068333 | PIXEL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a pixel structure includes providing a substrate including a transistor region and a pixel region, forming at least one gate electrode on the transistor region, forming an insulating layer on the substrate to overlay the gate electrode, and forming a patterned semi-conductive layer on the surface of a portion of the insulating layer disposed on the transistor region and the pixel region. A patterned first protective layer is formed on a portion of the patterned semi-conductive layer corresponding to the gate electrode, and the patterned semi-conductive layer is doped without being overlaid by the patterned first protective layer. | 2011-03-24 |
20110068334 | SEMICONDUCTOR DEVICE - Disclosed is a semiconductor device which consumes low power and has high reliability and tolerance for electrostatic discharge. The semiconductor device includes, over a first substrate, a pixel portion and a driver circuit portion both of which have a thin film transistor having an oxide semiconductor layer. The semiconductor device further possesses a second substrate to which a first counter electrode layer and a second counter electrode layer are provided, and a liquid crystal layer is interposed between the first and second substrates. The first and second counter electrode layers are provided over the pixel portion and the driver circuit portion, respectively, and the second counter electrode layer has the same potential as the first counter electrode layer. | 2011-03-24 |
20110068335 | OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - It is an object to provide a highly reliable semiconductor device with good electrical characteristics and a display device including the semiconductor device as a switching element. In a transistor including an oxide semiconductor layer, a needle crystal group provided on at least one surface side of the oxide semiconductor layer grows in a c-axis direction perpendicular to the surface and includes an a-b plane parallel to the surface, and a portion except for the needle crystal group is an amorphous region or a region in which amorphousness and microcrystals are mixed. Accordingly, a highly reliable semiconductor device with good electrical characteristics can be formed. | 2011-03-24 |
20110068336 | SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled threshold voltage, high operation speed, a relatively easy manufacturing process, and sufficient reliability. An impurity having influence on carrier concentration in the oxide semiconductor layer, such as a hydrogen atom or a compound containing a hydrogen atom such as H | 2011-03-24 |
20110068337 | Display and method for manufacturing the same - A display includes a substrate main body, a thin film transistor (TFT) on the substrate main body, the TFT including an oxide semiconductor layer and a metal oxide film sequentially stacked on top of each other. | 2011-03-24 |
20110068338 | METHOD FOR PRODUCING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR - A metallic wiring film, which is not exfoliated even when exposed to plasma of hydrogen, is provided. A metallic wiring film is constituted by an adhesion layer in which Al is added to copper and a metallic low-resistance layer which is disposed on the adhesion layer and made of pure copper. When a copper alloy including Al and oxygen are included in the adhesion layer and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer and the silicon layer even when being exposed to the hydrogen plasma, which prevents the occurrence of exfoliation between the adhesion layer and the silicon layer. If the amount of Al increases, since widths of the adhesion layer and the metallic low-resistance layer largely differ after etching, the maximum addition amount for permitting the etching to be performed is the upper limit. | 2011-03-24 |
20110068339 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film. | 2011-03-24 |
20110068340 | Thin Film Transistor Array Panel and Method for Manufacturing the Same - A thin film transistor array panel includes an insulating substrate. A gate line is formed on the insulating substrate and has a gate electrode. A gate insulating layer is formed on the gate line. A semiconductor layer is formed on the gate insulating layer and overlaps the gate electrode. Diffusion barriers are formed on the semiconductor layer and contain nitrogen. A data line crosses the gate line and has a source electrode partially contacting the diffusion barriers and a drain electrode partially contacting the diffusion barriers and facing the source electrode. The drain electrode is on the gate electrode. A pixel electrode is electrically connected to the drain electrode. | 2011-03-24 |
20110068341 | TFT-LCD ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - An embodiment of the invention relates to a TFT-LCD array substrate comprising a substrate, a gate line and a data line formed on the substrate, a pixel electrode and a thin film transistor formed in a pixel region defined by the gate line and the data line, wherein the thin film transistor comprises a gate electrode, a source electrode, and a transparent drain electrode, and the transparent drain electrode is electrically connected with the pixel electrode. | 2011-03-24 |
20110068342 | Laser Process for Minimizing Variations in Transistor Threshold Voltages - A laser method is provided for minimizing variations in transistor threshold voltages. The method supplies a wafer with a laser-crystallized active semiconductor film having a top surface with a first surface roughness. The method laser anneals the active semiconductor film, and in response to the laser annealing, melts the top surface of the active semiconductor film. The result is a top surface with a second roughness, less than the first roughness. More explicitly, the wafer active semiconductor film is crystallized using a laser with a first fluence, and then laser annealed with a second fluence, less than the first fluence. As compared with complementary metal-oxide-semiconductor field-effect (CMOSFET) thin-film transistor (TFT) structures formed in unprocessed regions of the active semiconductor film, the TFT threshold voltage standard deviation for TFTs in laser annealed portions of the active film are 60% less for n-channel and 30% less for p-channel TFTs. | 2011-03-24 |
20110068343 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD OF THE SAME - To achieve TFT having a high light-resistance characteristic with a suppressed light leak current at low cost by simplifying the manufacturing processes. The TFT basically includes: a light-shielding film formed on a glass substrate that serves as an insulating substrate; an insulating film formed on the light-shielding film; a semiconductor film formed on the insulating film; and a gate insulating film formed on the semiconductor film. Each layer of a laminate that is configured with three layers of the light-shielding film, the insulating film, and the semiconductor film is patterned simultaneously. Further, each layer of the laminate is configured with silicon or a material containing silicon. | 2011-03-24 |
20110068344 | ELECTRONIC DEVICE INCLUDING A TRENCH AND A CONDUCTIVE STRUCTURE THEREIN - An electronic device can include a transistor. In an embodiment, the transistor can include a semiconductor layer having a primary surface and a conductive structure. The conductive structure can include a horizontally-oriented doped region lying adjacent to the primary surface, an underlying doped region spaced apart from the primary surface and the horizontally-oriented doped region, and a vertically-oriented conductive region extending through a majority of the thickness of the semiconductor layer and electrically connecting the doped horizontal region and the underlying doped region. In another embodiment, the transistor can include a gate dielectric layer, wherein the field-effect transistor is designed to have a maximum gate voltage of approximately 20 V, a maximum drain voltage of approximately 30 V, and a figure of merit no greater than approximately 30 mΩ*nC. | 2011-03-24 |
20110068345 | PIXEL UNIT - A pixel unit is disposed on a substrate, and the pixel unit includes a thin film transistor (TFT), a patterned protection layer, and a pixel electrode. The TFT is disposed on the substrate. The patterned protection layer is disposed on the TFT. The patterned protection layer is porous and has an undercut located at a sidewall thereof. The pixel electrode is electrically connected to the TFT. | 2011-03-24 |
20110068346 | DISPLAY DEVICE - A display device includes a wire substrate including a wire unit for driving the display device, an integrated circuit chip mounted at the wire substrate, and a pad unit extended from the wire unit to be disposed between the wire substrate and the integrated circuit chip. The pad unit is connected to the integrated circuit chip. The pad unit includes a first conductive layer extended from the wire unit, and a second conductive layer disposed on the first conductive layer. The hardness of the second conductive layer is less than the hardness of the first conductive layer. | 2011-03-24 |
20110068347 | Nitride Semiconductor Structure and Method of Making Same - A structure method for producing same provides suppressed lattice defects when epitaxially forming nitride layers over non-c-plane oriented layers, such as a semi-polar oriented template layer or substrate. A patterned mask with “window” openings, or trenches formed in the substrate with appropriate vertical dimensions, such as the product of the window width times the cotangent of the angle between the surface normal and the c-axis direction, provides significant blocking of all diagonally running defects during growth. In addition, inclined posts of appropriate height and spacing provide a blocking barrier to vertically running defects is created. When used in conjunction with the aforementioned aspects of mask windows or trenches, the post structure provides significant blocking of both vertically and diagonally running defects during growth. | 2011-03-24 |
20110068348 | THIN BODY MOSFET WITH CONDUCTING SURFACE CHANNEL EXTENSIONS AND GATE-CONTROLLED CHANNEL SIDEWALLS - A thin body MOSFET with conducting surface channel extensions and gate-controlled channel sidewalls is described. One embodiment is a MOSFET comprising a semiconductor substrate; a channel layer disposed on a top surface of the substrate; a gate dielectric layer interposed between a gate electrode and the channel layer; and dielectric extension layers disposed on top of the channel layer and interposed between the gate electrode and Ohmic contacts. The gate dielectric layer comprises a first material, the first material forming an interface of low defectivity with the channel layer. In contrast, the dielectric extensions comprise a second material different than the first material, the second material forming a conducting surface channel with the channel layer. | 2011-03-24 |
20110068349 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND LAMP - A semiconductor light-emitting device ( | 2011-03-24 |
20110068350 | Diamond semiconductor devices and associated methods - Semiconductor devices and methods for making such devices are provided. One such method may include forming a transparent diamond layer having a SiC layer coupled thereto, where the SiC layer has a crystal structure that is substantially epitaxially matched to the transparent diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer, and coupling a diamond substrate to at least one of the plurality of semiconductor layers such that the diamond support is oriented parallel to the transparent diamond layer. In one aspect such a method may further include electrically coupling at least one of a p-type electrode or an n-type electrode to at least one of the plurality of semiconductor layers. | 2011-03-24 |
20110068351 | Method of Forming Three Dimensional Features on Light Emitting Diodes for Improved Light Extraction - A method is disclosed for obtaining a high-resolution lenticular pattern on the surface of a light emitting diode. The method comprises imprinting a patterned sacrificial layer of etchable material that is positioned on a semiconductor surface that is in turn adjacent a light emitting active region, and thereafter etching the imprinted sacrificial layer and the underlying semiconductor to transfer an imprinted pattern into the semiconductor layer adjacent the light emitting active region. | 2011-03-24 |
20110068352 | DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME - An integrated optical waveguide has a first optical waveguide, a second optical waveguide, and a groove. The second optical waveguide is coupled to the first optical waveguide and has a refractive index that is different from the first optical waveguide. The groove is disposed so as to traverse an optical path of the first optical waveguide and is separated from an interface between the first optical waveguide and the second optical waveguide by a predetermined spacing. The spacing from the interface and the width of the groove are determined such that reflection at a boundary between the first optical waveguide and the second optical waveguide is weakened. A semiconductor board may be disposed at a boundary between the first optical waveguide and the second optical waveguide. In this case, the width of the groove and the thickness of the semiconductor board are determined such that light reflected off an interface between the first optical waveguide and the groove is weakened by light reflected from an interface between the groove and the semiconductor board, and by light reflected from an interface between the semiconductor board and the second optical waveguide. | 2011-03-24 |
20110068353 | SEMICONDUCTOR DEVICE - A semiconductor device (A | 2011-03-24 |
20110068354 | High power LED lighting device using high extraction efficiency photon guiding structure - The present invention discloses a high power light emitting device using a high extraction efficiency photon-guiding structure for producing high-efficiency white light output with large viewing angle and large amount of light emitted from the side surfaces so that they can provide different light patterns for different applications such as street lighting, parking lighting, tunnel lighting, and etc., as they are used with a reflector. The emitter consists of a leadframe package or chip-on-board substrate, plurality of LED chips, silicone encapsulation material containing phosphor materials to convert short wavelength LED-emanated light to longer wavelength of light, a photon-guiding structure that enhances the efficiency of the LED package and provides light output with large viewing angle. | 2011-03-24 |
20110068355 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - A light emitting device and a light emitting device package including the same are provided. The light emitting device may include a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode on the light emitting structure, the first electrode including a pattern, and a pad electrode on the first electrode. | 2011-03-24 |
20110068356 | Method of manufacturing light emitting diode packaging lens and light emmiting diode package - A method of manufacturing light emitting diode packaging lens and packages made by using the method are disclosed in the present invention. By using electrophoretic deposition, one or more layers of phosphors are coated onto one surface of a cup which has a curved portion. The cup is used for the packaging lens. Thickness of phosphor layer can be controlled and distribution of phosphor particles is uniform. Therefore, light emitting diode packages with the lens can be a uniform light source. | 2011-03-24 |
20110068357 | ORGANIC ELECTROLUMINESCENT ELEMENT - The organic electroluminescent element of the present invention includes at least a pair of electrodes, at least one organic light-emitting layer between the pair of electrodes, and at least one lens A on a light-extracting surface of the pair of electrodes, wherein one of the pair of electrodes is a reflective electrode, and the other is a semi-transmissive/semi-reflective electrode, and wherein a real part n | 2011-03-24 |
20110068358 | PHOTOELECTRIC DEVICE, METHOD OF FABRICATING THE SAME AND PACKAGING APPARATUS FOR THE SAME - A method for fabricating a photoelectric device initially provides a ceramic substrate comprising a thermal dissipation layer on a bottom layer of the ceramic substrate, an electrode layer on the top surface of the ceramic substrate, and a reflective structure in cavities of the ceramic substrate. Next, a plurality of photoelectric dies is disposed on the top surface of the ceramic substrate. Then, a first packaging layer is formed on the top surfaces of the photoelectric dies. Next, the ceramic substrate is placed between an upper mold and a lower mold. Finally, a plurality of lenses is formed on the top surface of the first packaging layer by using an injection molding technique or a transfer molding technique. | 2011-03-24 |
20110068359 | Light-emitting element - A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer, a light-emitting layer and a second semiconductor layer, an insulation layer provided on the semiconductor laminated structure, a first wiring including a first vertical conducting portion and a first planar conducting portion and being electrically connected to the first semiconductor layer, the first vertical conducting portion extending inside the insulation layer, the light-emitting layer and the second semiconductor layer in a vertical direction and the first planar conducting portion extending inside the insulation layer in a planar direction, and a second wiring including a second vertical conducting portion and a second planar conducting portion and being electrically connected to the second semiconductor layer, the second vertical conducting portion extending inside the insulation layer in a vertical direction and the second planar conducting portion extending inside the insulation layer in a planar direction. | 2011-03-24 |
20110068360 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE - The present invention provides a semiconductor light emitting element with excellent color rendering properties, a method for manufacturing the semiconductor light emitting element, and a light emitting device. The semiconductor light emitting element includes: a semiconductor substrate that has a convex portion having a tilted surface as an upper face, and a concave portion formed on either side of the convex portion, the concave portion having a smaller width than the convex portion, a bottom face of the concave portion being located in a deeper position than the upper face of the convex portion; and a light emitting layer that is made of a nitride-based semiconductor and is formed on the semiconductor substrate so as to cover at least the convex portion. | 2011-03-24 |
20110068361 | HIGH PERFORMANCE LIGHT-EMITTING DEVICES - A light emitting device in the form of a layered structure has a passive bottom multilayer stack including a cathode layer, a cavity layer including a light emitting region, a passive top multilayer stack including a hole transport layer, and a transparent anode layer. The passive bottom and top multilayer stacks are devoid of a light emitting layer. A transparent substrate, through which light is emitted from the device, is located over the top multilayer stack. At least one functional additional layer group in the passive top multilayer stack controls the reflectance of the passive top multilayer stack and phase changes occurring upon reflection from the passive top multilayer stack in the cavity layer. | 2011-03-24 |
20110068362 | Light-Emitting Devices Having Multiple Encapsulation Layers With at Least One of the Encapsulation Layers Including Nanoparticles and Methods of Forming the Same - A light-emitting device includes an active region that is configured to emit light responsive to a voltage applied thereto. A first encapsulation layer at least partially encapsulates the active region and includes a matrix material and nanoparticles, which modify at least one physical property of the first encapsulation layer. A second encapsulation layer at least partially encapsulates the first encapsulation layer. | 2011-03-24 |
20110068363 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a light emitting device, including the steps of: (A) sequentially forming a first compound semiconductor layer of a first conduction type, an active layer, and a second compound semiconductor layer of a second conduction type different from said first conduction type, over a substrate; and (B) exposing a part of said first compound semiconductor layer, forming a first electrode over said exposed part of said first compound semiconductor layer and forming a second electrode over said second compound semiconductor layer, wherein said method further includes, subsequent to said step (B), the step of: (C) covering at least said exposed part of said first compound semiconductor layer, an exposed part of said active layer, an exposed part of said second compound semiconductor layer, and a part of said second electrode with an SOG layer. | 2011-03-24 |
20110068364 | BIDIRECTIONAL ELECTROSTATIC DISCHARGE PROTECTION STRUCTURE FOR HIGH VOLTAGE APPLICATIONS - Semiconductor structures providing protection against electrostatic events of both polarities are provided. A pair of p-n junctions is provided underneath a shallow trench isolation portion between a first-conductivity-type well and each of a signal-side second-conductivity-type well and an electrical-ground-side second-conductivity-type well in a semiconductor substrate. A second-conductivity-type doped region and a first-conductivity-type doped region are formed above each second-conductivity-type well such that a portion of the second-conductivity-type well resistively separates the second-conductivity-type doped region and the first-conductivity-type doped region within the semiconductor substrate. Each of the second-conductivity-type doped regions is wired either to a signal node or electrical ground. One of the two npn transistors and one of the two p-n diodes, each inherently present in the semiconductor structure, turn on to provide protection against electrical discharge events involving either type of excessive electrical charges. | 2011-03-24 |