12th week of 2012 patent applcation highlights part 14 |
Patent application number | Title | Published |
20120068110 | Hydroxyl Compounds Carrying Reactive Silyl Groups And Used As Ceramic Binders - The application relates to a reactive ceramic binder suitable for producing ceramic products from ceramic powder, characterized in that the reactive ceramic binder represents hydroxyl compounds which carry reactive silyl groups and can be additionally (poly)siloxane-substituted. | 2012-03-22 |
20120068111 | Methods and Apparatus for Enhanced Gas Distribution - Methods and apparatus for introducing a gas into the reaction zone of a reactor. Such methods and apparatus can more evenly distribute the gas throughout the reaction zone. Spargers for introducing a gas into the reaction zone of a reactor can be employed in systems and methods for carrying out the liquid-phase oxidation of an oxidizable compound, such as para-xylene. | 2012-03-22 |
20120068112 | PHOTO OR ELECTRON BEAM CURABLE COMPOSITIONS - A curable composition and a process for using the curable composition within a grating-coupled waveguide (GCW) sensor are disclosed. The composition can be used for facile replication of optical components, specifically those used in a label-independent detection system where operation of the waveguide is dependent on the detailed formation of micro and nano size patterns. The photo or electron beam curable composition has low viscosity (≦500 cPs) and cures to an optically clear material with high glass transition temperature (≧70° C.), low shrinkage on cure, low outgassing, and low extractables. | 2012-03-22 |
20120068113 | CHELATING AGENTS AND METHODS RELATING THERETO - A salt of an acidic chelating agent including an amine functionality, the salt comprising at least 0.25 mole of an alkaline earth metal per mole of acidic protons provided by the chelating agent; wherein the acidic chelating agent is not ethylene diamine disuccinic acid. | 2012-03-22 |
20120068114 | LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - Provided is a liquid crystal composition that satisfies at least one of characteristics such as high maximum temperature of a nematic phase, low minimum temperature of a nematic phase, small viscosity, large optical anisotropy, large positive dielectric anisotropy, large specific resistance, high stability to ultraviolet light and high stability to heat, or that is suitably balanced between at least two of the characteristics; and provided is an AM device that has a short response time, a large voltage holding ratio, a large contrast ratio, a long service life, etc. The liquid crystal composition includes a specific four-ring compound having high maximum temperature as a first component, a specific three-ring compound having large optical anisotropy and large dielectric anisotropy as a second component, and a specific three-ring compound having large dielectric anisotropy as a third component, and has a nematic phase. The liquid crystal display device contains this composition. | 2012-03-22 |
20120068115 | HIGH MOLECULAR WEIGHT, RANDOM, BISPHENOL BASED COPOLY(PHOSPHONATE CARBONATE)S - Disclosed are random copoly(phosphonate carbonate)s with the high molecular weight and narrow molecular weight distribution exhibiting a superior combination of properties compared to prior art. | 2012-03-22 |
20120068116 | LIQUID CRYSTAL COMPOSITIONS - This invention relates to a liquid crystal composition and articles comprising the composition. The composition comprises at least one compound of each of the Formulas (I), (II) and (III), | 2012-03-22 |
20120068117 | GREEN LUMINESCENT MATERIALS AND THEIR PREPARING METHODS - Green luminescent materials and their preparing methods. The luminescent materials are the compounds of the following general formula: M | 2012-03-22 |
20120068118 | NANOCRYSTAL DOPED MATRIXES - Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core-shell nanostructures with Group II-VI shells. | 2012-03-22 |
20120068119 | FLUID TREATMENT METHOD, FLUID TREATMENT APPARATUS, AND FLUID - A fluid treatment method reduces a concentration of a first component included in a fluid-to-be-treated. A fluid treatment apparatus reduces a concentration of a first component included in a fluid-to-be-treated. A concentration of a second component differing from the first component is reduced in the fluid-to-be-treated in order to obtain a first fluid. The first fluid passes through at least part of an adsorption unit in order to obtain a second fluid. The adsorption unit is capable of adsorbing both the first component and the second component and has at least an ability to adsorb the first component that is temperature dependent. A third fluid pass through a portion of the adsorption unit through which the first fluid has passed. The third fluid has a concentration of the second component that is lower than in the fluid-to-be-treated and a temperature that is higher than the fluid-to-be-treated. | 2012-03-22 |
20120068120 | SYNGAS PRODUCTION METHOD | 2012-03-22 |
20120068121 | CONJUGATED POLYMERS AND THEIR USE AS ORGANIC SEMICONDUCTORS - The invention relates to conjugated polymers that comprise phenanthrene and/or indenofluorene units and are free of amine-containing units, to methods of their preparation, to the use of the polymers in organic electronic (OE) devices, and to OE devices comprising the polymers. | 2012-03-22 |
20120068122 | METHOD FOR MAKING POLYMER COMPOSITES CONTAINING GRAPHENE SHEETS - In one embodiment, a method for producing a graphene-containing composition is provided, the method comprising: (i) mixing a graphene oxide with a medium to form a mixture; and (ii) heating the mixture to a temperature above about 40° C., whereby a graphene-containing composition is formed from the mixture. Composites of polymers with disperse functionalized graphene sheets and the applications thereof are also described. | 2012-03-22 |
20120068123 | USE OF PHTHALOCYANINE COMPOUNDS WITH ARYL OR HETARYL SUBSTITUENTS IN ORGANIC SOLAR CELLS - The present invention relates to organic solar cell comprising at least one photoactive region comprising an organic donor material in contact with an organic acceptor material and forming a donor-acceptor heterojunction, wherein the photoactive region comprises at least one compound of the formulae Ia and/or Ib where M, (R | 2012-03-22 |
20120068124 | Process for the Production of Carbon Graphenes and other Nanomaterials - Process for producing nanomaterials such as graphenes, graphene composites, magnesium oxide, magnesium hydroxides and other nanomaterials by high heat vaporization and rapid cooling. In some of the preferred embodiments, the high heat is produced by an oxidation-reduction reaction of carbon dioxide and magnesium as the primary reactants, although additional materials such as reaction catalysts, control agents, or composite materials can be included in the reaction, if desired. The reaction also produces nanomaterials from a variety of other input materials, and by varying the process parameters, the type and morphology of the carbon nanoproducts and other nanoproducts can be controlled. The reaction products include novel nanocrystals of MgO (percilase) and MgAl | 2012-03-22 |
20120068125 | CONDUCTIVE RESIN COMPOSITION - There is disclosed a conductive resin composition, comprising: (a) a resin component, and (b) a fine carbon fiber dispersed in the resin component, wherein a graphite-net plane consisting solely of carbon atoms forms a temple-bell-shaped structural unit comprising closed head-top part and body-part with open lower-end, 2 to 30 of the temple-bell-shaped structural units are stacked sharing a common central axis to form an aggregate, and the aggregates are connected in head-to-tail style with a distance to form the fiber. The resin composition has high conductivity while maintaining the original physical properties of the resin. | 2012-03-22 |
20120068126 | POST-SYSTHESIS MODIFICATION OF COLLOIDAL NANOCRYSTALS - Methods for precise and predictable modification of previously synthesized nanocrystals. The methods rely on the solubility behavior of crystalline materials to provide for controlled reversal of the nanocrystal growth process (i.e., dissolution). A method for post-synthesis modification of colloidal nanocrystals includes (1) providing a first nanocrystal having a first size and a first shape, (2) forming a reaction mixture that includes the nanocrystal, at least one ligand capable of binding to at least one component of the nanocrystal, at least one solvent, and an inert gas atmosphere, and (3) modifying the size and/or shape of the nanocrystal in the reaction mixture for a period of time at a temperature in a range from about 100 0C to about 240 0C so as to produce at least a second nanocrystal having a second size and/or a second shape. | 2012-03-22 |
20120068127 | BARIUM TITANATE-BASED SEMICONDUCTOR CERAMIC COMPOSITION AND BARIUM TITANATE-BASED SEMICONDUCTOR CERAMIC DEVICE - A barium titanate-based semiconductor ceramic composition which can be used for PTC thermistors for temperature sensors and which has characteristics, including a linear characteristic, advantageous for such PTC thermistors and a barium titanate-based semiconductor ceramic device. The barium titanate-based semiconductor ceramic composition is represented by the formula (Ba | 2012-03-22 |
20120068128 | PROCESS FOR PRODUCING ELECTRODE MATERIALS - A process for producing electrode materials, which comprises treating a mixed oxide which comprises lithium and at least one transition metal as cations with at least one oxygen-containing organic compound of sulfur or phosphorus or a corresponding alkali metal or ammonium salt of an oxygen-containing organic compound of sulfur or phosphorus, or a fully alkylated derivative of an oxygen-containing compound of sulfur or phosphorus. | 2012-03-22 |
20120068129 | OPTIMISED POSITIVE ELECTRODE MATERIAL FOR LITHIUM CELL BATTERIES, METHOD FOR THE PRODUCTION THEREOF, ELECTRODE, AND BATTERY FOR IMPLEMENTING SAID METHOD - A material or compound is provided having a spinel structure and corresponding to the formula Li | 2012-03-22 |
20120068130 | Sputtering Target, Transparent Conductive Film, and Their Manufacturing Method - A sputtering target including indium oxide and tin oxide, the content by percentage of the tin atoms therein being from 3 to 20 atomic % of the total of the indium atoms and the tin atoms, and the maximum grain size of indium oxide crystal in the sputtering target being 5 μm or less. When a transparent conductive film is formed by sputtering, this sputtering target makes it possible to suppress the generation of nodules on the surface of the target and to conduct the sputtering stably. | 2012-03-22 |
20120068131 | Portable Hoist - A portable strap hoist comprises a generally rectangular frame. An upper hook is mounted at a top of the frame for mounting the frame to a structure, in use. A drum includes an insulated strap wound about the drum supporting a lower hook for supporting a load, in use. A spline shaft is operatively associated with the drum to rotatably mount the drum to the frame. A driven gear is mounted to the shaft. A portable housing is mounted to the frame and includes a handle and a drive in the portable housing including a drive gear operatively engaging the driven gear. | 2012-03-22 |
20120068132 | Manual Marine Winch With Self Releasing Handle - A manual marine winch comprising a winch housing, rotating drum assembly supported on the housing, and a manually actuated control for spooling and un-spooling a winch line on the drum, wherein the control includes a self-releasing handle for selectively tensioning the drum. handle includes i) a ratchet gear coupled to the drum ii) a rotating handle body with a manual end grip, iii) a user engaged trigger mechanism moveable between an engaged and release position, and iv) a handle locking pawl on the body coupled to the trigger mechanism and moveable between a position engaged with the gear rotationally securing the body to the gear and drum when the trigger is in the engaged position and a position disengaged with the gear rotationally separating the body from the gear and drum when the trigger is not in the engaged position. | 2012-03-22 |
20120068133 | Overhead Storage Device - An overhead storage device having a lifting range. A constant torque spring is attached to a power pulley and is adapted to apply an approximately constant torque to the power pulley. A cable is partially wound around the power pulley and has an attachment mechanism at one end of the cable. A locking mechanism is adapted to permit the attachment mechanism and an attached load to be lowered and locked at any desired position within the range of the device. The approximately constant torque applied by the constant torque spring continuously causes the cable, unless restrained, to be further wound on the pulley. | 2012-03-22 |
20120068134 | HYDRAULIC JACK WITH LOCKING - Hydraulic jack ( | 2012-03-22 |
20120068135 | GRATE WALL - A barrier for preventing wildlife from entering a roadway is disclosed. The barrier includes a plate having a bottom edge adapted for piercing a ground surface, and at least one opening in the plate for connecting a corresponding at least one post to the ground so as to provide additional vertical support for the plate. | 2012-03-22 |
20120068136 | Phase Change Memory Device, Storage System Having the Same and Fabricating Method Thereof - Provided are a phase change memory device and a fabricating method thereof. The phase change memory device includes a substrate, an interlayer dielectric layer formed on the substrate, first and second contact holes formed in the interlayer dielectric layer, and a memory cell formed in the first and second contact holes and including a diode, a first electrode on the diode, a phase change material layer on the first electrode, and a second electrode on the phase change material layer, wherein the first contact hole and the second contact hole are spaced apart from and separated from each other. | 2012-03-22 |
20120068137 | SWITCHING DEVICE AND MEMORY DEVICE INCLUDING THE SAME - A switching device includes a first electrode, a bipolar tunneling layer, and a second electrode. The bipolar tunneling layer is formed on the first electrode and includes a plurality of dielectric layers having different dielectric constants. The second electrode is formed on the bipolar tunneling layer. | 2012-03-22 |
20120068138 | OPTICAL STORAGE MEDIUM COMPRISING TWO NONLINEAR LAYERS - The optical storage medium comprises a substrate layer, a data layer arranged on the substrate layer, a first nonlinear layer with a first super-resolution structure arranged above the data layer, and a second nonlinear layer with a second super-resolution structure arranged above the first nonlinear layer, the first nonlinear layer comprising a material having an increased reflectivity when irradiated with a laser beam and the second nonlinear layer comprising a material showing a transparency when irradiated with a laser beam. The first nonlinear layer comprises in particular a semiconductor material of one of the III-V semiconductor family having a low band-gap. And the second nonlinear layer comprises in particular a phase change material, for example SbTe or AIST. | 2012-03-22 |
20120068139 | MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY - A magnetoresistive element according to an embodiment includes: a first ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a second ferromagnetic layer having an axis of easy magnetization in a direction perpendicular to a film plane; a nonmagnetic layer placed between the first ferromagnetic layer and the second ferromagnetic layer; a first interfacial magnetic layer placed between the first ferromagnetic layer and the nonmagnetic layer; and a second interfacial magnetic layer placed between the second ferromagnetic layer and the nonmagnetic layer. The first interfacial magnetic layer includes a first interfacial magnetic film, a second interfacial magnetic film placed between the first interfacial magnetic film and the nonmagnetic layer and having a different composition from that of the first interfacial magnetic film, and a first nonmagnetic film placed between the first interfacial magnetic film and the second interfacial magnetic film. | 2012-03-22 |
20120068140 | SWITCHABLE ELECTRONIC DEVICE AND METHOD OF SWITCHING SAID DEVICE - A switchable electronic device comprises a hole blocking layer and a layer comprising a conductive material between first and second electrodes, wherein the conductivity of the device may be irreversibly switched upon application of a current having a current density of less than or equal to 100 A cm | 2012-03-22 |
20120068141 | SILVER-SELENIDE/CHALCOGENIDE GLASS STACK FOR RESISTANCE VARIABLE MEMORY - The invention is related to methods and apparatus for providing a resistance variable memory element with improved data retention and switching characteristics. According to an embodiment of the invention a resistance variable memory element is provided having at least one silver-selenide layer in between glass layers, wherein at least one of the glass layers is a chalcogenide glass, preferably having a Ge | 2012-03-22 |
20120068142 | RESISTANCE RANDOM ACCESS MEMORY ELEMENT AND METHOD FOR MAKING THE SAME - A resistance random access memory element includes a first electrode, an insulating layer, a diffusing metal layer, and a second electrode superimposed in sequence. The insulating layer includes a plurality of pointed electrodes. A method for making a resistance random access memory element includes growing and forming an insulating layer on a surface of a first electrode. A diffusing metal layer is formed on a surface of the insulating layer. A second electrode is mounted on a surface of the diffusing metal layer. A negative pole and a positive pole of a driving voltage are connected with the first and second electrodes, respectively. The diffusing metal in the diffusing metal layer is oxidized into metal ions by the driving voltage. The metal ions are driven into the insulating layer and form a plurality of pointed electrodes after reduction. | 2012-03-22 |
20120068143 | Memory Arrays And Methods Of Forming Memory Cells - Some embodiments include methods of forming memory cells utilizing various arrangements of conductive lines, electrodes and programmable material; with the programmable material containing high k dielectric material directly against multivalent metal oxide. Some embodiments include arrays of memory cells, with the memory cells including programmable material containing high k dielectric material directly against multivalent metal oxide. | 2012-03-22 |
20120068144 | RESISTANCE RANDOM ACCESS MEMORY - According to one embodiment, there are provided a first electrode, a second electrode, first and second variable-resistance layers that are arranged between the first electrode and the second electrode, and at least one non variable-resistance layer that is arranged so that positions of the first and second variable-resistance layers between the first electrode and the second electrode are symmetrical to each other. | 2012-03-22 |
20120068145 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nonvolatile memory device includes a first interconnect, an insulating layer, a needle-like metal oxide, and a second interconnect. The insulating layer is provided on the first interconnect. The needle-like metal oxide pierces the insulating layer in a vertical direction. The second interconnect is provided on the insulating layer. | 2012-03-22 |
20120068146 | MEMORY ELEMENT AND MEMORY DEVICE - There are provided a memory element and a memory device with a smaller range of element-to-element variation of electrical characteristics. The memory element includes a first electrode, a memory layer, and a second layer in this order. The memory layer includes a resistance change layer including a plurality of layers varying in diffusion coefficient of mobile atoms, and an ion source layer disposed between the resistance change layer and the second electrode. | 2012-03-22 |
20120068147 | PHASE CHANGE MEMORY DEVICE AND FABRICATION THEREOF - A method for forming a phase change memory device is disclosed. A substrate with a bottom electrode thereon is provided. A heating electrode and a dielectric layer are formed on the bottom electrode, wherein the heating electrode is surrounded by the dielectric layer. The heating electrode is etched to form recess in the dielectric layer. A phase change material is deposited on the dielectric layer, filling into the recess. The phase change material is polished to remove a portion of the phase change material exceeding the surface of the dielectric layer and a phase change layer is formed confined in the recess of the dielectric layer. A top electrode is formed on the phase change layer and the dielectric layer. | 2012-03-22 |
20120068148 | NONVOLATILE MEMORY ELEMENT AND FABRICATION METHOD FOR NONVOLATILE MEMORY ELEMENT - A variable resistance nonvolatile memory element capable of suppressing a variation in resistance values is provided. A nonvolatile memory element according to the present invention includes: a silicon substrate ( | 2012-03-22 |
20120068149 | APPARATUS OF MEMORY ARRAY USING FINFETS - In one or more embodiments, a semiconductor device a FinFET device and a second device. In one or more embodiments, the semiconductor device has a contact element coupled between a surface of the fin and the second device. | 2012-03-22 |
20120068150 | Nanowire Field Effect Transistors - A method for forming a nanowire field effect transistor (FET) device including forming a first silicon on insulator (SOI) pad region, a second SOI pad region, a third SOI pad region, a first SOI portion connecting the first SOI pad region to the second SOI pad region, and a second SOI portion connecting the second SOI pad region to the third SOI pad region on a substrate, patterning a first hardmask layer over the second SOI portion, forming a first suspended nanowire over the semiconductor substrate, forming a first gate structure around a portion of the first suspended nanowire, patterning a second hardmask layer over the first gate structure and the first suspended nanowire, removing the first hardmask layer, forming a second suspended nanowire over the semiconductor substrate, forming a second gate structure around a portion of the second suspended nanowire, and removing the second hardmask layer. | 2012-03-22 |
20120068151 | Light emitting and lasing semiconductor methods and devices - The invention is applicable for use in conjunction with a light-emitting semiconductor structure that includes a semiconductor active region of a first conductivity type containing a quantum size region and having a first surface adjacent a semiconductor input region of a second conductivity type that is operative, upon application of electrical potentials with respect to the active and input regions, to produce light emission from the active region. A method is provided that includes the following steps: providing a semiconductor output region that includes a semiconductor auxiliary layer of the first conductivity type adjacent a second surface, which opposes the first surface of the active region, and providing the auxiliary layer as a semiconductor material having a diffusion length for minority carriers of the first conductivity type material that is substantially shorter than the diffusion length for minority carriers of the semiconductor material of the active region. | 2012-03-22 |
20120068152 | GRAPHENE LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A graphene light-emitting device and a method of manufacturing the same are provided. The graphene light-emitting device includes a p-type graphene doped with a p-type dopant; an n-type graphene doped with an n-type dopant; and an active graphene that is disposed between the type graphene and the n-type graphene and emits light, wherein the p-type graphene, the n-type graphene, and the active graphene are horizontally disposed. | 2012-03-22 |
20120068153 | GROUP III NITRIDE NANOROD LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THEREOF - A group III nitride nanorod light emitting device and a method of manufacturing thereof. The method includes preparing a substrate, forming an insulating film including one or more openings exposing parts of the substrate on the substrate, growing first conductive group III nitride nanorod seed layers on the substrate exposed through the openings by supplying a group III source gas and a nitrogen (N) source gas thereto, growing first conductive group III nitride nanorods on the first conductive group III nitride nanorod seed layers by supplying the group III source gas and an impurity source gas in a pulse mode and continuously supplying the N source gas, forming an active layer on a surface of each of the first conductive group III nitride nanorods, and forming a second conductive nitride semiconductor layer on the active layer. | 2012-03-22 |
20120068154 | GRAPHENE QUANTUM DOT LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A graphene quantum dot light emitting device includes: a first graphene; a graphene quantum dot layer disposed on the first graphene and including a plurality of graphene quantum dots; and a second graphene disposed on the graphene quantum dot layer. A method of manufacturing a graphene quantum dot light emitting device includes: forming a first graphene doped with a first dopant; forming a graphene quantum dot layer including a plurality of graphene quantum dots on the first graphene; and forming a second graphene doped with a second dopant on the graphene quantum dot layer. | 2012-03-22 |
20120068155 | III NITRIDE SEMICONDUCTOR SUBSTRATE, EPITAXIAL SUBSTRATE, AND SEMICONDUCTOR DEVICE - In a semiconductor device | 2012-03-22 |
20120068156 | InN Nanowire Based Multifunctional Nanocantilever Sensors - Sensor are generally provided that include a layer of silicon oxide on a portion of a n+ layer to form an uneven surface where the layer of silicon oxide defines a thicker region than an exposed portion of the n+ layer. First and second metal contacts can be on the layer of silicon oxide, with first and second nanowires extending respectively from a first base on the first metal contact and a second base on the second metal contact. The first nanowire and the second nanowire are connected together at an apex to form a v-shaped nanocantilever, wherein the apex is positioned over the exposed n+ layer, and wherein the nanowires comprise indium and nitrogen. Methods of fabricating such sensors, along with methods of their use, are also generally provided. | 2012-03-22 |
20120068157 | Transistor Having Graphene Base - A transistor device having a graphene base for the transport of electrons into a collector is provided. The transistor consists of a heterostructure comprising an electron emitter, an electron collector, and a graphene material base layer consisting of one or more sheets of graphene situated between the emitter and the collector. The transistor also can further include an emitter transition layer at the emitter interface with the base and/or a collector transition layer at the base interface with the collector. The electrons injected into the graphene material base layer can be “hot electrons” having an energy E substantially greater than E | 2012-03-22 |
20120068158 | INFRARED LIGHT DETECTOR - Provided is an infrared light detector | 2012-03-22 |
20120068159 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a nonvolatile semiconductor memory device includes a first memory portion. The first memory portion includes a first base semiconductor layer, a first electrode, a first channel semiconductor layer, a first base tunnel insulating film, a first channel tunnel insulating, a first charge retention layer and a first block insulating film. The first channel semiconductor layer is provided between the first base semiconductor layer and the first electrode, and includes a first channel portion. The first base tunnel insulating film is provided between the first base semiconductor layer and the first channel semiconductor layer. The first channel tunnel insulating film is provided between the first electrode and the first channel portion. The first charge retention layer is provided between the first electrode and the first channel tunnel insulating film. The first block insulating film is provided between the first electrode and the first charge retention layer. | 2012-03-22 |
20120068160 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device according to an embodiment, includes a catalytic metal film, a graphene film, a contact plug, and an adjustment film. The catalytic metal film is formed above a substrate. The graphene film is formed on the catalytic metal film. The contact plug is connected to the graphene film. The adjustment film is formed in a region other than a region connected to the contact plug of a surface of the graphene film to adjust a Dirac point position in a same direction as the region connected to the contact plug with respect to a Fermi level. | 2012-03-22 |
20120068161 | METHOD FOR FORMING GRAPHENE USING LASER BEAM, GRAPHENE SEMICONDUCTOR MANUFACTURED BY THE SAME, AND GRAPHENE TRANSISTOR HAVING GRAPHENE SEMICONDUCTOR - A method for forming graphene includes introducing a substrate and a carbon-containing reactant source into a chamber, and radiating a laser beam onto the substrate to decompose the carbon-containing reactant source and form graphene over the substrate using carbon atoms generated by decomposition of the carbon-containing reactant source. A carbon-containing gas (methane) decomposes upon radiation of a laser beam. The carbon-containing gas has a decomposition rate on the order of femtoseconds and the laser beam has a pulse on the order of nanoseconds or more. The graphene is grown in a single layer along the surface of the substrate. Then, the graphene is selectively patterned using a laser beam to form a desired pattern. | 2012-03-22 |
20120068162 | PERMEATION BARRIER FOR ENCAPSULATION OF DEVICES AND SUBSTRATES - A permeation barrier film structure for organic electronic devices includes one or more bilayers having a hybrid permeation barrier composition. Each of the one or more bilayers includes a first region having a first composition corresponding to a first CF | 2012-03-22 |
20120068163 | COLOR CONVERSION FILM CONTAINING A CONJUGATED HIGH MOLECULAR WEIGHT COPOLYMER AND MULTICOLOR LIGHT-EMITTING ORGANIC EL DEVICE INCLUDING THE SAME - Provided are a color conversion film that maintains sufficient converted light intensity over a long period of time without increasing its thickness and a multicolor light-emitting organic EL device that includes the color conversion film. The color conversion film contains a conjugated high molecular weight copolymer having a structure of formula (1) that has alternating fluorene group-containing repeating units and arylenevinylene repeating units, and has phenylene groups inserted as spacers on both ends of the fluorene groups. | 2012-03-22 |
20120068164 | MATERIAL FOR ORGANIC ELECTROLUMINESCENT ELEMENT AND ORGANIC ELECTROLUMINESCENT ELEMENT EMPLOYING THE SAME - A material for organic electroluminescence devices for use as a host material in combination with at least one phosphorescent metal complex, which comprises a compound having a specific heterocyclic structure, is described. Also described is an organic electroluminescence device having an anode, a cathode and an organic thin film layer having one or more layers. The organic thin film layer is interposed between the anode and cathode and has a light emitting layer containing a host material in combination with at least one phosphorescent metal complex. At least one layer of the organic thin film layer contains the material for organic electroluminescence devices. The material for organic electroluminescence devices provides an organic electroluminescence device which has a high emitting efficiency, causes little pixel defects, is excellent in heat resistance, and show a long lifetime. | 2012-03-22 |
20120068165 | ORGANIC ELECTROLUMINESCENCE ELEMENT - An organic electroluminescence element including: an anode, a cathode, and at least one organic layer which includes a light emitting layer, and which is provided between the anode and the cathode, wherein at least one layer in the organic layer contains at least one selected from nitrogen-containing heterocyclic derivatives each represented by the following General Formula (1) and used as at least one of an electron injecting material and an electron transporting material, and at least one layer in the organic layer contains at least one selected from phosphorescence emitting materials having structures expressed by the following Structural Formulae (I-1) to (I-4), (I-7) to (I-12), (I-14) and (I-16) to (I-26): | 2012-03-22 |
20120068166 | AROMATIC CHALCOGEN COMPOUNDS AND THEIR USE - This invention relates to dibenzothiopyran compounds. This invention also relates to layers and devices including at least one of these compounds. | 2012-03-22 |
20120068167 | SURFACE TREATMENT METHOD FOR ELECTRODES, ELECTRODE, AND PROCESS FOR PRODUCING ORGANIC ELECTROLUMINESCENT ELEMENT - [Problem] To provide a method for increasing a work function of an electrode by a simple operation and an organic EL element which has an anode of a high work function, exhibits excellent light emission properties (luminous efficiency, lifetime), has a good luminescent surface with small unevenness of luminance and few defects and has low leakage current. | 2012-03-22 |
20120068168 | CARBAZOLE-BASED PHOSPHINE OXIDE COMPOUND, AND ORGANIC ELECTROLUMINESCENT DEVICE INCLUDING THE SAME - The present invention relates to a carbazole-based phosphine oxide compound, and an organic electroluminescent device including the same. According to the present invention, provided are a compound for an organic electroluminescent device which can improve the thermal stability and efficiency characteristics which are unstable and low, respectively, corresponding to problems of known compounds for organic electroluminescent devices, and particularly, can implement excellent efficiency characteristics in a pure blue phosphorescent device, by using the carbazole-based phosphine oxide compound of the compound for the organic electroluminescent device, and the organic electroluminescent device. According to one aspect of the present invention, the carbazole-based phosphine oxide compound of the compound for the organic electroluminescent device is provided, and the organic electroluminescent device containing the same which can implement thermal stability and high efficiency characteristics is also provided. | 2012-03-22 |
20120068169 | ORGANIC EL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - An organic EL display device ( | 2012-03-22 |
20120068170 | MATERIALS FOR ORGANIC ELECTROLUMINESCENT DEVICES - The present invention describes indenocarbazole derivatives having electron- and hole-transporting properties, in particular for use in the emission and/or charge-transport layer of electroluminescent devices or as matrix material. The invention furthermore relates to a process for the preparation of the compounds according to the invention and to electronic devices comprising same. | 2012-03-22 |
20120068171 | ORGANIC ELECTROLUMINESCENT ELEMENT - In an organic electroluminescent element, light extraction efficiency is enhanced. An organic electroluminescent element | 2012-03-22 |
20120068172 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting display device includes a substrate, a transparent electrode layer, a source/drain layer, an IGZO semiconductor layer, a first insulating layer, a gate layer, a second insulating layer and an organic light emitting diode. The organic light-emitting display device can have a simplified manufacturing process. In addition, the present invention also provides a method for manufacturing the organic light-emitting display device. | 2012-03-22 |
20120068173 | LIQUID CRYSTAL DISPLAY DEVICE - A first transistor, a second transistor, a third transistor, a fourth transistor are provided. In the first transistor, a first terminal is electrically connected to a first wiring; a second terminal is electrically connected to a gate terminal of the second transistor; a gate terminal is electrically connected to a fifth wiring. In the second transistor, a first terminal is electrically connected to a third wiring; a second terminal is electrically connected to a sixth wiring. In the third transistor, a first terminal is electrically connected to a second wiring; a second terminal is electrically connected to the gate terminal of the second transistor; a gate terminal is electrically connected to a fourth wiring. In the fourth transistor, a first terminal is electrically connected to the second wiring; a second terminal is electrically connected to the sixth wiring; a gate terminal is connected to the fourth wiring. | 2012-03-22 |
20120068174 | ELECTRICAL MASK INSPECTION - An apparatus and method for electrical mask inspection is disclosed. A scan chain is formed amongst two metal layers and a via layer. One of the three layers is a functional layer under test, and the other two layers are test layers. A resistance measurement of the scan chain is used to determine if a potential defect exists within one of the vias or metal segments comprising the scan chain. | 2012-03-22 |
20120068175 | Method to Optimize and Reduce Integrated Circuit, Package Design, and Verification Cycle Time - A method for fabricating an integrated circuit (IC) product and IC product formed thereby. The method includes designing an IC package having a plurality of IC connection sets, each configured to be connected to a corresponding IC selected from among a plurality of ICs, each having different functionality. Various IC products can be produced depending upon which selected IC is connected to its corresponding connection set, and the IC package can be cut during design to exclude IC connection sets corresponding to ICs that are not selected. By testing the complete IC package, a portion of the complete IC package can be fabricated, cut from the complete IC package, with significantly reduced design and testing requirements. | 2012-03-22 |
20120068176 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, there is provided a semiconductor device including a semiconductor substrate, an edge seal, a plurality of pad pieces, and an insulating film pattern. The semiconductor substrate includes a chip area formed at an inward side of the semiconductor substrate when viewed in a direction perpendicular to a surface of the semiconductor substrate. The edge seal is disposed around the chip area on the surface to protect the chip area. The plurality of pad pieces are disposed on an edge region on the surface. The insulating film pattern covers edge portions of the plurality of pad pieces at a side of the edge seal, at least at one side of the chip area on the surface in a first direction and at least at one side of the chip area on the surface in a second direction. | 2012-03-22 |
20120068177 | MEASURING APPARATUS - A measuring apparatus including a first chip, a first circuit layer, a first heater, a first stress sensor and a second circuit layer is provided. The first chip has a first through silicon via, a first surface and a second surface opposite to the first surface. The first circuit layer is disposed on the first surface. The first heater and the first stress sensor are disposed on the first surface and connected to the first circuit layer. The second circuit layer is disposed on the second surface. The first heater comprises a plurality of first switches connected in series to generate heat. | 2012-03-22 |
20120068178 | TRENCH POLYSILICON DIODE - Embodiments of the present invention include a method of manufacturing a trench transistor. The method includes forming a substrate of a first conductivity type and implanting a dopant of a second conductivity type, forming a body region of the substrate. The method further includes forming a trench in the body region and depositing an insulating layer in the trench and over the body region wherein the insulating layer lines the trench. The method further includes filling the trench with polysilicon forming a top surface of the trench and forming a diode in the body region wherein a portion of the diode is lower than the top surface of the trench. | 2012-03-22 |
20120068179 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - According to embodiments, there is provided a semiconductor device, including: a logic circuit; an interlayer insulating film formed above the logic circuit; an amorphous silicon layer including: a non-silicide layer formed on the interlayer insulating film; and a silicide layer formed on the non-silicide layer; a TFT formed on the amorphous silicon layer; and a contact plug formed to plug a through hole penetrating the interlayer insulating film, the contact plug being electrically connected to the logic circuit, an upper part of the contact plug being connected to the silicide layer. | 2012-03-22 |
20120068180 | METHODS OF FORMING LOW INTERFACE RESISTANCE CONTACTS AND STRUCTURES FORMED THEREBY - Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a tapered contact opening in an ILD disposed on a substrate, wherein a source/drain contact area is exposed, preamorphizing a portion of a source drain region of the substrate, implanting boron into the source/drain region through the tapered contact opening, forming a metal layer on the source/drain contact area, and then annealing the metal layer to form a metal silicide. | 2012-03-22 |
20120068181 | INTEGRATED CIRCUIT DEVICE AND METHOD FOR MANUFACTURING INTEGRATED CIRCUIT DEVICE - An object of the present invention is to provide a structure of a thin film circuit portion and a method for manufacturing a thin film circuit portion by which an electrode for connecting to an external portion can be easily formed under a thin film circuit. A stacked body including a first insulating film, a thin film circuit formed over one surface of the first insulating film, a second insulating film formed over the thin film circuit, an electrode formed over the second insulating film, and a resin film formed over the electrode, is formed. A conductive film is formed adjacent to the other surface of the first insulating film of the stacked body to be overlapped with the electrode. The conductive film is irradiated with a laser. | 2012-03-22 |
20120068182 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE - A semiconductor device of the present invention is a semiconductor device including a thin film transistor and a thin film diode. A semiconductor layer ( | 2012-03-22 |
20120068183 | POWER-INSULATED-GATE FIELD-EFFECT TRANSISTOR - To provide a power MISFET using oxide semiconductor. A gate electrode, a source electrode, and a drain electrode are formed so as to interpose a semiconductor layer therebetween, and a region of the semiconductor layer where the gate electrode and the drain electrode do not overlap with each other is provided between the gate electrode and the drain electrode. The length of the region is from 0.5 μm to 5 μm. In such a power MISFET, a power source of 100 V or higher and a load are connected in series between the drain electrode and the source electrode, and a control signal is input to the gate electrode. | 2012-03-22 |
20120068184 | DISLOCATION REDUCTION IN NON-POLAR III-NITRIDE THIN FILMS - Lateral epitaxial overgrowth of non-polar III-nitride seed layers reduces threading dislocations in the non-polar III-nitride thin films. First, a thin patterned dielectric mask is applied to the seed layer. Second, a selective epitaxial regrowth is performed to achieve a lateral overgrowth based on the patterned mask. Upon regrowth, the non-polar III-nitride films initially grow vertically through openings in the dielectric mask before laterally overgrowing the mask in directions perpendicular to the vertical growth direction. Threading dislocations are reduced in the overgrown regions by (1) the mask blocking the propagation of dislocations vertically into the growing film and (2) the bending of dislocations through the transition from vertical to lateral growth. | 2012-03-22 |
20120068185 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting diode (OLED) display and a method for manufacturing the same are provided. The OLED display includes a substrate, an active layer and a capacitor lower electrode positioned on the substrate, a gate insulating layer positioned on the active layer and the capacitor lower electrode, a gate electrode positioned on the gate insulating layer at a location corresponding to the active layer, a capacitor upper electrode positioned on the gate insulating layer at a location corresponding to the capacitor lower electrode, a first electrode positioned to be separated from the gate electrode and the capacitor upper electrode, an interlayer insulating layer positioned on the gate electrode, the capacitor upper electrode, and the first electrode, a source electrode and a drain electrode positioned on the interlayer insulating layer, and a bank layer positioned on the source and drain electrodes. | 2012-03-22 |
20120068186 | Electronic Device - An electronic device includes a carrier, a plurality of pins, and an electronic circuit that includes a first semiconductor chip and a second semiconductor chip. The first semiconductor chip is attached to the carrier and the second semiconductor chip is attached to one of the plurality of pins. | 2012-03-22 |
20120068187 | SOLID STATE LIGHTING DEVICES WITH IMPROVED COLOR UNIFORMITY AND METHODS OF MANUFACTURING - Solid state lighting (SSL) devices with good color uniformity and methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes a support structure, an SSL die in the support structure, and a converter material at least partially encapsulating the SSL die. The converter material is configured to emit under excitation. The converter material has a surface facing away from the SSL die, and the surface of the converter material has a generally convex shape. | 2012-03-22 |
20120068188 | Defects Annealing and Impurities Activation in III-Nitride Compound Semiconductors - A GaN sample in a sealed enclosure is heated very fast to a high temperature above the point where GaN is thermodynamically stable and is then cooled down very fast to a temperature where it is thermodynamically stable. The time of the GaN exposure to a high temperature range above its thermodynamic stability is sufficiently short, in a range of few seconds, to prevent the GaN from decomposing. This heating and cooling cycle is repeated multiple times without removing the sample from the enclosure. As a result, by accumulating the exposure time in each cycle, the GaN sample can be exposed to a high temperature above its point of thermodynamic stability for a long time but the GaN sample integrity is maintained (i.e., the GaN doesn't decompose) due to the extremely short heating duration of each single cycle. | 2012-03-22 |
20120068189 | Method for Vertical and Lateral Control of III-N Polarity - Disclosed herein is a method of: depositing a patterned mask layer on an N-polar GaN epitaxial layer of a sapphire, silicon, or silicon carbide substrate; depositing an AlN inversion layer on the open areas; removing any remaining mask; and depositing a III-N epitaxial layer to simultaneously produce N-polar material and III-polar material. Also disclosed herein is: depositing an AlN inversion layer on an N-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce III-polar material. Also disclosed herein is: depositing an inversion layer on a III-polar bulk III-N substrate and depositing a III-N epitaxial layer to produce N-polar material. Also disclosed herein is a composition having: a bulk III-N substrate; an inversion layer on portions of the substrate; and a III-N epitaxial layer on the inversion layer. The III-N epitaxial layer is of the opposite polarity of the surface of the substrate. | 2012-03-22 |
20120068190 | Gallium Nitride Devices with Electrically Conductive Regions - Semiconductor structures comprising a III-nitride (e.g., gallium nitride) material region and methods associated with such structures are provided. In some embodiments, the structures include an electrically conductive material (e.g., gold) separated from certain other region(s) of the structure (e.g., a silicon substrate) by a barrier material in order to limit, or prevent, undesirable reactions between the electrically conductive material and the other component(s) which can impair device performance. In certain embodiments, the electrically conductive material may be formed in a via. For example, the via can extend from a topside of the device to a backside so that the electrically conductive material connects a topside contact to a backside contact. The structures described herein may form the basis of a number of semiconductor devices including transistors (e.g., PET), Schottky diodes, light-emitting diodes and laser diodes, amongst others. | 2012-03-22 |
20120068191 | METHOD OF CONTROLLING STRESS IN GROUP-III NITRIDE FILMS DEPOSITED ON SUBSTRATES - Methods of controlling stress in GaN films deposited on silicon and silicon carbide substrates and the films produced therefrom are disclosed. A typical method comprises providing a substrate and depositing a graded gallium nitride layer on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply. A typical semiconductor film comprises a substrate and a graded gallium nitride layer deposited on the substrate having a varying composition of a substantially continuous grade from an initial composition to a final composition formed from a supply of at least one precursor in a growth chamber without any interruption in the supply. | 2012-03-22 |
20120068192 | CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B)N ON VARIOUS SUBSTRATES - A method of reducing threading dislocation densities in non-polar such as a-{11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such as a non-polar or semi polar GaN template, etching the template material down to various depths through openings in the mask, and growing non-polar or semi-polar III-Nitride by coalescing laterally from the tops of the sidewalls before the vertically growing material from the trench bottoms reaches the tops of the sidewalls. The coalesced features grow through the openings of the mask, and grow laterally over the dielectric mask until a fully coalesced continuous film is achieved. | 2012-03-22 |
20120068193 | STRUCTURE AND METHOD FOR INCREASING STRAIN IN A DEVICE - A method and structure are disclosed for increasing strain in a device, specifically an n-type field effect transistor (NFET) complementary metal-oxide-semiconductor (CMOS) device. Embodiments of this invention include growing an epitaxial layer, performing a cold carbon or cluster carbon pre-amorphization implantation to implant substitutional carbon into the epitaxial layer, forming a tensile cap over the epitaxial layer, and then annealing to recrystallize the amorphous layer to create a stress memorization technique (SMT) effect. The epitaxial layer will therefore include substitutional carbon and have a memorized tensile stress induced by the SMT. Embodiments of this invention can also include a lower epitaxial layer under the epitaxial layer, the lower epitaxial layer comprising for example, a silicon carbon phosphorous (SiCP) layer. | 2012-03-22 |
20120068194 | SILICON CARBIDE SEMICONDUCTOR DEVICES - A method of manufacturing a semiconductor device, wherein the method comprises applying a first layer comprising silicon to a second layer comprising silicon carbide, wherein an interface is defined between the first and second layers; and oxidising sonic or all of the first layer. | 2012-03-22 |
20120068195 | METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE AND SILICON CARBIDE SUBSTRATE - A method for manufacturing a silicon carbide substrate includes the steps of: preparing a plurality of SiC substrates each made of single-crystal silicon carbide; forming a base layer made of silicon carbide and holding the plurality of SiC substrates, which are arranged side by side when viewed in a planar view; and forming a filling portion filling a gap between the plurality of SiC substrates. | 2012-03-22 |
20120068196 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND A METHOD OF MANUFACTURE THEREOF - A semiconductor light-emitting device comprises a semiconductor layer structure disposed over a substrate. The layer structure includes an active region disposed between a first layer and a second layer. One or more cavities are present in the layer structure, each cavity being coincident with a threading dislocation and extending from an upper surface of the layer structure through at least the second layer and the active region. Removing material where a threading dislocation is present provides effective suppression of the tendency of the threading dislocations to act as non-radiative centres, thereby improving the light output efficiency of the device. The device may be manufactured by a first step of selectively etching the layer structure at the locations of one or more threading dislocation to form a pilot cavity at the or each location. A second etching step is applied to increase the depth of each pilot cavity. | 2012-03-22 |
20120068197 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND ELECTRONIC DEVICE - A light-emitting element is provided, including a first electrode and a second electrode, a first layer including first and second organic compounds, the first layer being formed between the first electrode and the second electrode wherein the first organic compound is capable of emitting a first light and the second organic compound has an electron transporting property, and a second layer including third and fourth organic compounds, the second layer being formed between the first layer and the second electrode wherein the third organic compound is capable of emitting a second light and has an electron trap property and the fourth organic compound has an electron transporting property. | 2012-03-22 |
20120068198 | HIGH DENSITY MULTI-CHIP LED DEVICES - High density multi-chip LED devices are described. Embodiments of the present invention provide high-density, multi-chip LED devices with relatively high efficiency and light output in a compact size. An LED device includes a plurality of interconnected LED chips and an optical element such as a lens. The LED chips may be arranged in two groups, wherein the LED chips within each group are connected in parallel and the groups are connected in series. In some embodiments, the LED device includes a submount, which may be made of ceramic. The submount may include a connection bus and semicircular areas to which chips are bonded. Wire bonds can be connected to the LED chips so that all the wire bonds are disposed on the outside of a group of LED chips to minimize light absorption. | 2012-03-22 |
20120068199 | THIN FILM DEPOSITION APPARATUS, METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE BY USING THE THIN FILM DEPOSITION APPARATUS, AND ORGANIC LIGHT-EMITTING DISPLAY DEVICE MANUFACTURED BY USING THE METHOD - A thin film deposition apparatus that is suitable for manufacturing large-sized display devices on a mass scale and that can be used for high-definition patterning, a method of manufacturing an organic light-emitting display device by using the thin film deposition apparatus, and an organic light-emitting display device manufactured by using the method. The thin film deposition apparatus includes: a deposition source that discharges a deposition material; a deposition source nozzle unit disposed at a side of the deposition source and including a plurality of deposition source nozzles arranged in a first direction; a patterning slit sheet disposed opposite to the deposition source nozzle unit and including a plurality of patterning slits arranged in the first direction; a first barrier plate assembly including a plurality of first barrier plates that are disposed between the deposition source nozzle unit and the patterning slit sheet in the first direction, and that partition a space between the deposition source nozzle unit and the patterning slit sheet into a plurality of sub-deposition spaces; and a second barrier plate disposed at one side of the patterning slit sheet, wherein an inner part of the second barrier plate is partitioned into a plurality of spaces by a plurality of barrier ribs. | 2012-03-22 |
20120068200 | Liquid Crystal Display Device and Method for Manufacturing the Same - A liquid crystal display device with a built-in touch screen, which uses a common electrode as a touch-sensing electrode including an intersection of a gate line and a data line to define a pixel region, a gate metal disposed in a central portion of the pixel, an insulating layer formed on the gate metal, a first contact hole disposed through the insulating layer to expose a predetermined portion of an upper surface of the gate metal, a contact metal on the insulating layer and inside the first contact hole, the contact metal electrically connected with the gate metal, a first passivation layer on the contact metal, a second contact hole disposed through the first passivation layer to expose a predetermined portion of an upper surface of the contact metal, a common electrode on the first passivation layer and inside the second contact hole, a conductive line electrically connected with the common electrode, and a second passivation layer on the first passivation layer and the conductive line, wherein the gate metal and the common electrode are electrically connected via the contact metal. | 2012-03-22 |
20120068201 | Thin Film Deposition Apparatus, Method of Manufacturing Organic Light-Emitting Display Device by Using the Apparatus, and Organic Light-Emitting Display Device Manufactured by Using the Method - A thin film deposition apparatus, a method of manufacturing an organic light-emitting display device by using the thin film deposition apparatus, and an organic light-emitting display device manufactured by using the method. A thin film deposition apparatus for forming a thin film on a substrate includes a first chamber in a vacuum state; first and second stages arranged in parallel in the first chamber wherein the substrate is fixable to at least one of the first and second stages; a mask contactable with the substrate; and a first deposition source and a second deposition source that are movable relative to the first and second stages and are configured to discharge a deposition material onto the substrate. | 2012-03-22 |
20120068202 | ACTIVE MATRIX SUBSTRATE, METHOD OF MANUFACTURING THE SAME AND DISPLAY EQUIPMENT USING ACTIVE MATRIX SUBSTRATE MANUFACTURED BY THE SAME METHOD - The present invention provides an active matrix substrate and a method of manufacturing the same by decreasing the number of photolithographic processes to reduce the manufacturing cost. The invention also provides a display device using an active matrix substrate manufactured by said manufacturing method. In a process for preparing pixels on an active substrate, which constitutes a display device, a bank or an etching pattern is formed by performing half-tone exposure on a photo resist film or on a black color photo resist film where an active matrix and a display electrode are prepared by coating, and an insulator film is fabricated, and a transparent conductive film and a color filter are prepared by inkjet method. | 2012-03-22 |
20120068203 | LIGHT EMITTING DEVICE - A light emitting device includes a package body, a light emitting diode, a transparent resin material, and a wire. The package body includes a bottom part and a side part. The bottom part includes a first electrode and a second electrode electrically connecting the upper surface and the bottom surface of the bottom part, respectively. The side part includes an upper surface including a trench and a bottom surface being in contact with the upper surface of the bottom part, wherein the upper surface of the bottom part is lower than the upper surface of the side part such that the package body includes a cavity surrounded by the side part, and the bottom surface of the bottom part includes a second opened portion that divides the first electrode and the second electrode, and wherein a portion of the transparent resin material is disposed inside of the trench. | 2012-03-22 |
20120068204 | LED MODULE FOR MODIFIED LAMPS AND MODIFIED LED LAMP - An LED module includes a printed circuit board (PCB) or a surface mount device (SMD) mount, an LED chip mounted on the PCB or the SMD mount, a cover mounted on the LED chip and a surface of the PCB or the SMD mount which surrounds the LED chip. The surface of the PCB or the SMD mount on which the spherical cover is mounted may be covered on its side walls with a white reflective material which is in contact with the LED chip. | 2012-03-22 |
20120068205 | LED LIGHT ENGINE AND METHOD OF MANUFACTURE THEREOF - A light emitting diode (LED) light engine includes a solid transparent dome mounted on one or more LED dies to form a base module, a flexible sheath having embedded therein a phosphor that converts light of a first wavelength range to light of a second wavelength range, the sheath being attached to the base module so that the sheath conforms to a light emitting surface of the dome. The sheath emits light of the second wavelength range when the LED is emitting light of the first wavelength range. Further sheaths may be formed each with different phosphors or phosphor blends, and one of the sheaths may be selected to cover the base module depending on the color of light to be produced by the light engine. | 2012-03-22 |
20120068206 | Close-packed array of light emitting devices - A close-packed array of light emitting diodes includes a nonconductive substrate having a plurality of elongate channels extending therethrough from a first side to a second side, where each of the elongate channels in at least a portion of the substrate includes a conductive rod therein. The conductive rods have a density over the substrate of at least about 1,000 rods per square centimeter and include first conductive rods and second conductive rods. The close-packed array further includes a plurality of light emitting diodes on the first side of the substrate, where each light emitting diode is in physical contact with at least one first conductive rod and in electrical contact with at least one second conductive rod. | 2012-03-22 |
20120068207 | OPTICAL DEVICE, SEMICONDUCTOR WAFER, METHOD OF PRODUCING OPTICAL DEVICE, AND METHOD OF PRODUCING SEMICONDUCTOR WAFER - Provided is an optical device including a base wafer containing silicon, a plurality of seed crystals disposed on the base wafer, and a plurality of Group 3-5 compound semiconductors lattice-matching or pseudo lattice-matching the plurality of seed crystals. At least one of the Group 3-5 compound semiconductors has a photoelectric semiconductor formed therein, the photoelectric semiconductor including a light emitting semiconductor that emits light in response to a driving current supplied thereto or a light receiving semiconductor that generates a photocurrent in response to light applied thereto, and at least one of the plurality of Group 3-5 compound semiconductors other than the Group 3-5 compound semiconductor having the photoelectric semiconductor has a heterojunction transistor formed therein. | 2012-03-22 |
20120068208 | MICRO-STRUCTURE PHOSPHOR COATING - An optical emitter includes micro-structure phosphor coating on a light-emitting diode die mounted on a package substrate. The micro-structures are transferred onto a micro-structure phosphor coating precursor by patterning and curing the precursor or by curing the precursor through a mold. The micro-structures are half spheroids, three-sided pyramids, or six-sided pyramids. | 2012-03-22 |
20120068209 | Semiconductor Light Emitting Devices with Optical Coatings and Methods of Making Same - A method of making a semiconductor light emitting device having one or more light emitting surfaces includes positioning a stencil on a substrate such that a chip disposed on the substrate is positioned within an opening in the stencil. Phosphor-containing material is deposited in the opening to form a coating on one or more light emitting surfaces of the chip. The opening may or may not substantially conform to a shape of the chip. The phosphor-containing material is cured with the stencil still in place. After curing, the stencil is removed from the substrate and the coated chip is separated from the substrate. The chip may then be subjected to further processing. | 2012-03-22 |