11th week of 2010 patent applcation highlights part 15 |
Patent application number | Title | Published |
20100065806 | PROGRAMMABLE RESISTANCE MEMORY DEVICES AND SYSTEMS USING THE SAME AND METHODS OF FORMING THE SAME - A programmable resistance memory element and method of forming the same. The memory element includes a first electrode, a dielectric layer over the first electrode and a second electrode over the dielectric layer. The dielectric layer and the second electrode each have sidewalls. A layer of programmable resistance material, e.g., a phase change material, is in contact with the first electrode and at least a portion of the sidewalls of the dielectric layer and the second electrode. Memory devices including memory elements and systems incorporating such memory devices are also disclosed. | 2010-03-18 |
20100065807 | NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY ELEMENT ARRAY, AND METHOD FOR MANUFACTURING NONVOLATILE MEMORY ELEMENT - The present invention is configured such that a resistance variable element ( | 2010-03-18 |
20100065808 | PHASE CHANGE MEMORY CELL IN VIA ARRAY WITH SELF-ALIGNED, SELF-CONVERGED BOTTOM ELECTRODE AND METHOD FOR MANUFACTURING - An array of “mushroom” style phase change memory cells is manufactured by forming a separation layer over an array of contacts, forming an isolation layer on the separation layer and forming an array of memory element openings in the isolation layer using a lithographic process. Etch masks are formed within the memory element openings by a process that compensates for variation in the size of the memory element openings that results from the lithographic process. The etch masks are used to etch through the separation layer to define an array of electrode openings. Electrode material is deposited within the electrode openings; and memory elements are formed within the memory element openings. The memory elements and bottom electrodes are self-aligned. | 2010-03-18 |
20100065809 | NANOWIRE COMPRISING SILICON RICH OXIDE AND METHOD FOR PRODUCING THE SAME - Disclosed herein is a nanowire including silicon rich oxide and a method for producing the same. The nanowire exhibits excellent electrically conducting properties and optical characteristics, and therefore is effectively used in a variety of applications including, for example, solar cells, sensors, photodetectors, light emitting diodes, laser diodes, EL devices, PL devices, CL devices, FETs, CTFs, surface plasmon waveguides, MOS capacitors and the like. | 2010-03-18 |
20100065810 | Method Of Synthesizing Semiconductor Nanostructures And Nanostructures Synthesized By The Method - A method of synthesizing semiconductor nanostructures of at least one semiconductor material (e.g. nanowires, nanorods, nanoribbons, nanodots, quantumdots, etc.) is described which includes the steps of placing a solid catalyst particle on a substrate, placing the combination of the said substrate and the said solid catalyst in a chamber of low oxygen partial pressure, below I×10 | 2010-03-18 |
20100065811 | SINGLE PHOTON SOURCE WITH AllnN CURRENT INJECTION LAYER - A photon source includes a substrate, an active region formed above the substrate, and a pair of electrodes configured to provide an injection current which passes through the active region. The active region includes a quantum dot layer including one or more Al | 2010-03-18 |
20100065812 | Nitride semiconductor light emitting element - Provided is a nitride semiconductor light emitting element having an improved carrier injection efficiency from a p-type nitride semiconductor layer to an active layer by simple means from a viewpoint utterly different from the prior art. A buffer layer | 2010-03-18 |
20100065813 | LIGHT EMITTING DEVICE - A light emitting device includes a stacked body including at least a light emitting layer made of In | 2010-03-18 |
20100065814 | HYBRID ORGANIC/NANOPARTICLE DEVICES - Example embodiments disclosed herein may relate to organic electronic and/or organic optoelectronic devices, which may further relate to hybrid organic/nanoparticle devices with dual functions of resonant tunneling and light emission behaviors. | 2010-03-18 |
20100065815 | SEMICONDUCTOR STRUCTURE INCLUDING MIXED RARE EARTH OXIDE FORMED ON SILICON - A method (and resultant structure) of forming a semiconductor structure, includes forming a mixed rare earth oxide on silicon. The mixed rare earth oxide is lattice-matched to silicon. | 2010-03-18 |
20100065816 | LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF - A light emitting diode (LED) and a method for fabricating the same, capable of improving brightness by forming a InGaN layer having a low concentration of indium, and whose lattice constant is similar to that of an active layer of the LED, is provided. The LED includes: a buffer layer disposed on a sapphire substrate; a GaN layer disposed on the buffer layer; a doped GaN layer disposed on the GaN layer; a GaN layer having indium disposed on the GaN layer; an active layer disposed on the GaN layer having indium; and a P-type GaN disposed on the active layer. Here, an empirical formula of the GaN layer having indium is given by In(x)Ga(1-x)N and a range of x is given by 02010-03-18 | |
20100065817 | Memory device and method of fabricating the same - A memory device includes a first electrode, a second electrode spaced apart from the first electrode and a nanotube or nanowire network disposed between the first electrode and the second electrode, having a heterojunction structure of a P-type network and an N-type network, and having a diode characteristic. Since the nanotube or nanowire network has the heterojunction structure of the P-type network and the N-type network, and has the diode characteristic, it is possible to enhance a degree of integration of the memory device and simplify the fabrication processes without separately requiring a selection device. | 2010-03-18 |
20100065818 | Layers and patterns of nanowire or carbon nanotube using chemical self assembly and fabricating method in liquid crystal display device thereby - Disclosed are layers and patterns of nanowire or nanotube using a chemical self assembly for forming a semiconductor layer and a conductive layer of a thin film transistor by using a nanowire and/or nanotube solution and an diamine-based self-assembled monolayer (SAM) material. The Layers and patterns including layers and patterns of nanowire or nanotube using a chemical self assembly include: a substrate having a surface terminated with amine group (—NH | 2010-03-18 |
20100065819 | Well-aligned, high aspect-ratio, high-density silicon nanowires and methods of making the same - A method of producing silicon nanowires includes providing a substrate in the form of a doped material; formulating an etching solution; and applying an appropriate current density for an appropriate length of time. Related structures and devices composed at least in part from silicon nanowires are also described. | 2010-03-18 |
20100065820 | Nanotube Device Having Nanotubes with Multiple Characteristics - A carbon nanotube of a nanotube device has at least two segments with different characteristics. The segments meet at a junction and a diameter of the carbon nanotube on either side of the junction is about the same. One segment may be doped differently from another segment. One segment may be p doped and another segment n doped. One segment may be doped with a different carrier concentration from another segment. The nanotube device may be used in power semiconductor devices including power diodes and power transistors. These power devices will be very power efficient, wasting significantly less energy than similar manufactured using silicon technology. | 2010-03-18 |
20100065821 | Molecular quantum interference device - A molecular quantum interference device is provided. A method for the design of such devices is also provided, the method including modelling of device performance. | 2010-03-18 |
20100065822 | LIPID NANOTUBE OR NANOWIRE SENSOR - A sensor apparatus comprising a nanotube or nanowire, a lipid bilayer around the nanotube or nanowire, and a sensing element connected to the lipid bilayer. Also a biosensor apparatus comprising a gate electrode; a source electrode; a drain electrode; a nanotube or nanowire operatively connected to the gate electrode, the source electrode, and the drain electrode; a lipid bilayer around the nanotube or nanowire, and a sensing element connected to the lipid bilayer. | 2010-03-18 |
20100065823 | GATED RESONANT TUNNELING DIODE - A gated resonant tunneling diode (GRTD) that operates without cryogenic cooling is provided. This GRTD employs conventional CMOS process technology, preferably at the 65 nm node and smaller, which is different from other conventional quantum transistors that require other, completely different process technologies and operating conditions. To accomplish this, the GRTD uses a body of a first conduction type with a first electrode region and a second electrode region (each of a second conduction type) formed in the body. A channel is located between the first and second electrode regions in the body. A barrier region of the first conduction type is formed in the channel (with the doping level of the barrier region being greater than the doping level of the body), and a quantum well region of the second conduction type formed in the channel. Additionally, the barrier region is located between each of the first and second electrode regions and the quantum well region. An insulating layer is formed on the body with the insulating layer extending over the quantum well region and at least a portion of the barrier region, and a control electrode region is formed on the insulating layer. | 2010-03-18 |
20100065824 | METHOD FOR REDUCING FERMI-LEVEL-PINNING IN A NON-SILICON CHANNEL MOS DEVICE - A method to reduce (avoid) Fermi Level Pinning (FLP) in high mobility semiconductor compound channel such as Ge and III-V compounds (e.g. GaAs or InGaAs) in a Metal Oxide Semiconductor (MOS) device. The method is using atomic hydrogen which passivates the interface of the high mobility semiconductor compound with the gate dielectric and further repairs defects. The methods further improve the MOS device characteristics such that a MOS device with a quantum well is created. | 2010-03-18 |
20100065825 | Light-Emitting Component - The invention relates to a light-emitting device, in particular a light-emitting diode, with an arrangement of layers on a substrate, wherein the arrangement of layers has an anode contact and a cathode contact which are in electrical contact with a light-emitting layer stack arranged between the anode contact and the cathode contact which, on its part, comprises a polymer layer consisting of a polymer material and a low-molecular layer of vacuum-deposited small molecules of an organic material, and wherein the small molecules of the low-molecular layer are formed as donor molecules with an oxidation potential versus Fc/Fc | 2010-03-18 |
20100065826 | NOVEL FUSED POLYCYCLIC AROMATIC COMPOUND, PROCESS FOR PRODUCING THE SAME, AND USE THEREOF - In one embodiment of the present invention, a novel fused polycyclic aromatic compound of the present invention is (a) a compound including a benzodichalcogenophenobenzodichalcogenophene (BXBX) skeleton further having an aromatic ring(s) located outside the BXBX skeleton, or (b) a compound including a BXBX skeleton in which a benzene ring is substituted with a heterocyclic ring. The compound can strengthen intermolecular interaction due to greater π electron orbits. This improves an electron field effect mobility of an organic semiconductor device that is manufactured by use of the compound as an organic semiconductor material. Further, since the number of fused rings included in the compound is small, the compound does not cause problems that generally occur in compounds having an extremely large number of fused rings, i.e., poor solubility in solvent and poor atmospheric stability due to high affinity to oxygen. As a result, the fused polycyclic aromatic compound of the present invention can be preferably used as an organic semiconductor material. | 2010-03-18 |
20100065827 | COMPOUNDS AND ORGANIC LIGHT EMITTING DIODE USING THE SAME - Disclosed are new compounds and an organic light emitting diode using the same. The organic light emitting diode using the new compound according to the present invention exhibits excellent characteristics in terms of actuating voltage, light efficiency, and lifespan. | 2010-03-18 |
20100065828 | COMPOUNDS AND ORGANIC LIGHT EMITTING DIODE USING THE SAME - Disclosed are new compounds and an organic light emitting diode using the same. The organic light emitting diode using the new compound according to the present invention exhibits excellent characteristics in terms of actuating voltage, light efficiency, and lifespan. | 2010-03-18 |
20100065829 | POLYMER WRAPPED CARBON NANOTUBE NEAR-INFRARED PHOTOVOLTAIC DEVICES - A photovoltaic device includes a photoactive region disposed between and electrically connected to two electrodes where the photoactive region includes photoactive polymer-wrapped carbon nanotubes that create excitons upon absorption of light in the range of about 400 nm to 1400 nm. | 2010-03-18 |
20100065830 | Organic thin film transistor and method for fabricating the same - Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process. | 2010-03-18 |
20100065831 | HYBRID ORGANIC LIGHT-EMITTING TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF - A hybrid organic light-emitting transistor device and a manufacturing method thereof are provided. The hybrid organic light-emitting transistor device includes at least one organic light-emitting diode device and at least one organic thin-film transistor device placed on the same substrate. The organic light-emitting diode device has a first organic layer placed between an anode and a cathode, and the organic thin-film transistor device has a second organic layer placed on a source electrode and a drain electrode. The first organic layer and the second organic layer are spatially isolated from each other, and an organic material forming the second organic layer is identical to an organic material forming the first organic layer. The hybrid organic light-emitting transistor with a reduced pixel size and an improved aperture ratio can be easily obtained. | 2010-03-18 |
20100065832 | LIGHT-EMITTING APPARATUS - [Problems] To make joints between light-emitting panel units ( | 2010-03-18 |
20100065833 | Organic field-effect transistor and circuit - The invention relates to an organic field-effect transistor, in particular an organic thin film field-effect transistor comprising a gate electrode, a drain electrode and a source electrode, a dielectric layer which is formed in contact with the gate electrode, an active layer made from an organic material which is in contact with the drain electrode and the source electrode and which is configured electrically undoped, a dopant material layer which contains a dopant material that is an electrical dopant for the organic material of the active layer, and a border surface region in which a planar contact is formed between the active layer and the dopant material layer, wherein mobility of similar electrical charge carriers, namely electrons or holes, in the dopant material layer is no more than half as great as in the active layer. | 2010-03-18 |
20100065834 | INTEGRATED ORGANIC PHOTOVOLTAIC AND LIGHT EMITTING DIODE DEVICE - An integrated organic photovoltaic and electroluminescent device includes an organic light emitting diode and an organic photovoltaic. The OLED and the OPV share a common substrate building layer. | 2010-03-18 |
20100065835 | THIN FILM TRANSISTOR HAVING CRYSTALLINE INDIUM OXIDE SEMICONDUCTOR FILM - To provide a thin film transistor having an indium oxide-based semiconductor film which allows only a thin metal film on the semiconductor film to be selectively etched. A thin film transistor having a crystalline indium oxide semiconductor film which is composed mainly of indium oxide and contains a positive trivalent metal oxide. | 2010-03-18 |
20100065836 | RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A resistive memory device includes an insulation layer over a substrate, a nanowire penetrating the insulation layer, a resistive layer formed over the insulation layer and contacting with the nanowire, and an upper electrode formed over the resistive layer. | 2010-03-18 |
20100065837 | METHOD FOR MANUFACTURING THIN FILM TRANSISTOR USING OXIDE SEMICONDUCTOR AND DISPLAY APPARATUS - A thin film transistor is manufactured by forming a gate electrode on a substrate, forming a first insulating film on the gate electrode, forming an oxide semiconductor layer on the first insulating film with an amorphous oxide, patterning the first insulating film, patterning the oxide semiconductor layer, forming a second insulating film on the oxide semiconductor layer in an oxidative-gas-containing atmosphere, patterning the second insulating film to expose a pair of contact regions, forming an electrode layer on the pair of contact regions, and patterning the electrode layer to for a source electrode and a drain electrode. | 2010-03-18 |
20100065838 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a semiconductor device including a thin film transistor with excellent electrical characteristics and high reliability and a method for manufacturing the semiconductor device with high mass productivity. A main point is to form a low-resistance oxide semiconductor layer as a source or drain region after forming a drain or source electrode layer over a gate insulating layer and to form an oxide semiconductor film thereover as a semiconductor layer. It is preferable that an oxygen-excess oxide semiconductor layer be used as a semiconductor layer and an oxygen-deficient oxide semiconductor layer be used as a source region and a drain region. | 2010-03-18 |
20100065839 | DISPLAY DEVICE - A protective circuit includes a non-linear element, which includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a second oxide semiconductor layer and a conductive layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with the gate insulating layer, side face portions and part of top face portions of the conductive layer and side face portions of the second oxide semiconductor layer in the first wiring layer and the second wiring layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved. | 2010-03-18 |
20100065840 | DISPLAY DEVICE - A protective circuit includes a non-linear element, which further includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a conductive layer and a second oxide semiconductor layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with side face portions of the gate insulating layer and the conductive layer of the first wiring layer and the second wiring layer and a side face portion and a top face portion of the second oxide semiconductor layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved. | 2010-03-18 |
20100065841 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer. | 2010-03-18 |
20100065842 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - It is an object of the present invention to provide a thin film transistor in which an oxide semiconductor film containing indium (In), gallium (Ga), and zinc (Zn) is used and contact resistance of a source or a drain electrode layer is reduced, and a manufacturing method thereof. An IGZO layer is provided over the source electrode layer and the drain electrode layer, and source and drain regions having lower oxygen concentration than the IGZO semiconductor layer are intentionally provided between the source and drain electrode layers and the gate insulating layer, so that ohmic contact is made. | 2010-03-18 |
20100065843 | ZINC OXIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A semiconductor device that has excellent characteristics and mass productivity wherein the introduction of defects thereinto at the time of device separation is prevented, and a method for producing the semiconductor device. In particular, there is provided a high-performance semiconductor device having excellent luminous efficiency, longevity and mass productivity; and a method for producing this semiconductor device. The method for producing the semiconductor device has a step of forming, between a substrate comprising zinc oxide (ZnO) and a device operating layer, a defect-blocking layer having a crystal composition that is different from that of the substrate, and a step of forming device dividing grooves to a depth that goes beyond the defect-blocking layer, relative to the device operating layer side surface of the substrate on which the device operating layer is formed. | 2010-03-18 |
20100065844 | THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR - The present invention provides a thin film transistor including: a channel layer mainly containing a conductive oxide semiconductor; a pair of electrodes on the channel layer; and a protective film covering an exposed surface of the channel layer, exposed to the gap between the pair of electrodes. The protective film includes at least an oxygen transmission film in contact with the channel layer, and an oxygen disturbance film hardly transmitting oxygen in comparison with the oxygen transmission film, in this order from the channel layer side. A length of the oxygen disturbance film in a direction where the pair of electrodes face each other is equal to or larger than a value obtained by multiplying a width of the pair of electrodes in a direction orthogonal to the direction where the pair of electrodes face each other by 0.55. | 2010-03-18 |
20100065845 | ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE - The invention provides an organic electroluminescent display device comprising: an organic electroluminescent element comprising an organic layer comprising a luminescent layer disposed between a pixel electrode and an upper electrode; and a drive TFT that supplies an electric current to the organic electroluminescent element, wherein: the drive TFT comprises a substrate, a gate electrode, a gate insulation film, an active layer, a source electrode and a drain electrode, and wherein: an resistive layer is provided between the active layer and at least one of the source electrode and the drain electrode. | 2010-03-18 |
20100065846 | SYSTEM IN PACKAGE AND SOCKET - This invention relates to a system in package including a plurality of integrated circuit chips and a substrate on which the plurality of integrated circuit chips are mounted and characterized in that a testability circuit for facilitating a test on at least one of the integrated circuit chips is incorporated into the substrate. The testability circuit incorporated into the substrate is formed by embedding a so-called WLCSP integrated circuit chip into the substrate. Alternatively, the testability circuit is formed by using a transistor element formed by using a semiconductor layer formed on the substrate. By incorporating the testability circuit into the substrate as described above, it is possible to realize a system in package facilitated in test without increases in size and cost. | 2010-03-18 |
20100065847 | AL ALLOY FILM FOR DISPLAY DEVICE,DISPLAY DEVICE, AND SPUTTERING TARGET - The present invention provides an Al alloy film for a display device, to be directly connected to a conductive oxide film on a substrate, the Al alloy film comprising Ge in an amount of 0.05 to 0.5 at %, and comprising Gd and/or La in a total amount of 0.05 to 0.45 at %, a display device using the same, and a sputtering target for the display device. For the Al alloy film of the present invention, even when a barrier metal is not provided, and a conductive oxide film and the Al alloy film are directly connected, the adhesion between the conductive oxide film and the Al alloy film is high, and the contact resistivity is low, and preferably, the dry etching property is also excellent. | 2010-03-18 |
20100065848 | TFT Substrate and Method of Fabricating the Same - Provided are a thin-film transistor (TFT) substrate which can facilitate the formation of contact holes and has improved reliability and a method of fabricating the TFT substrate. The TFT substrate includes a gate wiring formed on an insulating substrate; a data wiring defining a pixel region by intersecting the gate wiring, the data wiring including a source electrode and a drain electrode; a plurality of black matrix barrier ribs formed along the boundaries of the pixel region; a color filter formed to cover the pixel region; a pixel electrode formed on the color filter; and a plurality of contact holes formed through the color filter near the corners of the pixel region through which the pixel electrode and the drain electrode contact each other. | 2010-03-18 |
20100065849 | ORGANIC LIGHT EMITTING DISPLAY AND FABRICATION METHOD OF THE SAME - Disclosed is an organic light emitting display. In the organic light emitting display, a substrate is divided into a display region, in which an image is displayed, and a non-display region surrounding the display region. The organic light emitting display includes a plurality of pixels provided on the display region. At least one thin film transistor is formed on the non-display region. The display region includes a first electrode connected to the thin film transistor, an organic light emitting layer formed on the first electrode, and a second electrode formed on the organic light emitting layer to apply voltage to the organic light emitting layer with the first electrode. A light blocking layer having an opening formed below the semiconductor layer is formed on the non-display region. | 2010-03-18 |
20100065850 | ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - An array substrate includes a substrate including a display area and a peripheral area surrounding the display area, a transistor layer formed in the display area of the substrate and electrically connected to a gate line and a data line, a color filter formed in a pixel region on the transistor layer, a first light blocking member disposed between adjacent color filters, a first transparent member formed on the first light blocking member to cover the first light blocking member, a first color pattern formed in a peripheral area of the substrate and including substantially the same material as the color filter, and a second transparent member including substantially the same material as the first transparent member. The second transparent member is disposed in the peripheral area of the substrate to cover the first color pattern. | 2010-03-18 |
20100065851 | SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD - A semiconductor device | 2010-03-18 |
20100065852 | SYSTEM FOR DISPLAYING IMAGES AND FABRICATING METHOD THEREOF - A system for displaying images and fabricating method thereof are provided. The system includes a thin film transistor substrate including a substrate having a display area and a pad area. The thin film transistor substrate further includes a conductive line disposed on the substrate in the display area. The conductive line includes a lower metal line, an upper metal line and a middle metal line therebetween. The width of the middle metal line is narrower than that of the upper metal line. | 2010-03-18 |
20100065853 | PROCESS AND SYSTEM FOR LASER CRYSTALLIZATION PROCESSING OF FILM REGIONS ON A SUBSTRATE TO MINIMIZE EDGE AREAS, AND STRUCTURE OF SUCH FILM REGIONS - A process and system for processing a thin film sample are provided. In particular, a beam generator can be controlled to emit at least one beam pulse. The beam pulse is then masked to produce at least one masked beam pulse, which is used to irradiate at least one portion of the thin film sample. With the at least one masked beam pulse, the portion of the film sample is irradiated with sufficient intensity for such portion to later crystallize. This portion of the film sample is allowed to crystallize so as to be composed of a first area and a second area. Upon the crystallization thereof, the first area includes a first set of grains, and the second area includes a second set of grains whose at least one characteristic is different from at least one characteristic of the second set of grains. The first area surrounds the second area, and is configured to allow an active region of a thin-film transistor (“TFT”) to be provided at a distance therefrom. | 2010-03-18 |
20100065854 | GROWTH AND MANUFACTURE OF REDUCED DISLOCATION DENSITY AND FREE-STANDING ALUMINUM NITRIDE FILMS BY HYDRIDE VAPOR PHASE EPITAXY - A Group III-nitride semiconductor film containing aluminum, and methods for growing this film. A film is grown by patterning a substrate, and growing the Group III-nitride semi-conductor film containing aluminum on the substrate at a temperature designed to increase the mobility of aluminum atoms to increase a lateral growth rate of the Group III-nitride semiconductor film. The film optionally includes a substrate patterned with elevated stripes separated by trench regions, wherein the stripes have a height chosen to allow the Group III-nitride semiconductor film to coalesce prior to growth from the bottom of the trenches reaching the top of the stripes, the temperature being greater than 1075° C., the Group III-nitride semiconductor film being grown using hydride vapor phase epitaxy, the stripes being oriented along a (1-100) direction of the substrate or the growing film, and a dislocation density of the grown film being less than 10 | 2010-03-18 |
20100065855 | METHOD OF MANUFACTURING GROUP-III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, GROUP-III NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND LAMP - The object of the present invention is to provide a method of manufacturing a Group-III nitride semiconductor light-emitting device that is highly productive and that enables production of a device having excellent light-emitting properties; a Group-III nitride semiconductor light-emitting device; and a lamp using the light emitting device. The present invention provides a method of manufacturing a Group-III nitride semiconductor light-emitting device, comprising the steps of: activating a gas including a Group-V element and a metal material with plasma, thereby reacting the gas with the metal material; forming on a substrate an intermediate layer that is made of a Group-III nitride compound; and stacking an n-type semiconductor layer that is made of a Group-III nitride semiconductor, a light-emitting layer, and a p-type semiconductor layer, sequentially on the intermediate layer, wherein the Group-V element is nitrogen, the gas fraction of nitrogen in the gas is within a range of more than 20% to less than 99% during forming of the intermediate layer, and the intermediate layer is formed into a single crystal structure. | 2010-03-18 |
20100065856 | Semiconductor package with integrated passives and method for fabricating same - According to one disclosed embodiment, a semiconductor package for integrated passives and a semiconductor device comprises a high permeability structure formed over a surface of the semiconductor package and surrounding a contact body of the semiconductor package, the contact body being connected to an output of the semiconductor device. The contact body can be, for example, a solder bump. The high permeability structure causes a substantial increase in inductance of the contact body so as to form an increased inductance inductor coupled to the output of the semiconductor device. In one embodiment, the semiconductor package further comprises a blanket insulator formed over the high permeability structure, and a capacitor stack formed over the blanket insulator. In one embodiment, the semiconductor device comprises a group III-V power semiconductor device. | 2010-03-18 |
20100065857 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A silicon carbide semiconductor device having excellent performance characteristics and a method of manufacturing the same are obtained. A coating film made of Si is formed on an initial growth layer on a 4H—SiC substrate, and an extended terrace surface is formed in a region covered with the coating film. Next, the coating film is removed, and a new growth layer is epitaxially grown on the initial growth layer. A 3C—SiC portion made of 3C—SiC crystals having a polytype stable at a low temperature is grown on the extended terrace surface of the initial growth layer. A channel region of a MOSFET or the like is provided in the 3C—SiC portion having a narrow band gap. As a result, the channel mobility is improved because of a reduction in an interface state, and a silicon carbide semiconductor device having excellent performance characteristics is obtained. | 2010-03-18 |
20100065858 | Semiconductor device including a plurality of semiconductor substrates and method of manufacturing the same - In a semiconductor device, a first semiconductor substrate includes a first element on a first-surface side thereof, and a second semiconductor substrate includes a second element and a wiring part on a first-surface side thereof. The first semiconductor substrate and the second semiconductor substrate are attached with each other in such a manner that a first surface of the first semiconductor substrate is opposite a first surface of the second semiconductor substrate. A hole is provided from a second surface of the first semiconductor substrate to the wiring part through the first semiconductor substrate, and a sidewall of the hole is insulated. A drawing wiring part made of a conductive member fills the hole. | 2010-03-18 |
20100065859 | Semiconductor device and method of manufacturing the same - A semiconductor device includes a substrate, and a semiconductor thin film bonded to the substrate, wherein the semiconductor thin film includes a plurality of discrete operating regions and an element isolating region which isolates the plurality of discrete operating regions, and the element isolating region is etched to a shallower depth than a thickness of the semiconductor thin film, and is a thinner region than the plurality of discrete operating regions. | 2010-03-18 |
20100065860 | LIGHT EMITTING DIODE LIGHTING DEVICE - The present invention relates to a light emitting diode (LED) lighting device ( | 2010-03-18 |
20100065861 | LIGHT-EMITTING DEVICE - A light-emitting device | 2010-03-18 |
20100065862 | Light Emitting, Photovoltaic Or Other Electronic Apparatus and System - The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of substantially spherical or optically resonant diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of substantially spherical lenses suspended in a polymer attached or deposited over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap. | 2010-03-18 |
20100065863 | Light Emitting, Photovoltaic Or Other Electronic Apparatus and System - The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of lenses suspended in a polymer deposited or attached over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes are substantially spherical, and have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap. | 2010-03-18 |
20100065864 | WHITE POINT COMPENSATED LEDS FOR LCD DISPLAYS - A backlight for a color LCD includes white light LEDs formed using a blue LED die with a layer of red and green phosphors over it. The attenuation by the LCD layers of the blue light component of the white light is typically greater as the blue wavelength becomes shorter. In order to achieve a uniform blue color component across the surface of an LCD screen and achieve uniform light output from one LCD to another, the blue light leakage of the phosphor layer is tailored to the dominant or peak wavelength of the blue LED die. Therefore, the white points of the various white light LEDs in a backlight should not match when blue LED dies having different dominant or peak wavelengths are used in the backlight. The different leakage amounts through the tailored phosphor layers offset the attenuation vs. wavelength of the LCD layers. | 2010-03-18 |
20100065865 | METHOD OF FORMING NITRIDE SEMICONDUCTOR AND ELECTRONIC DEVICE COMPRISING THE SAME - A method of forming a nitride semiconductor through ion implantation and an electronic device including the same are disclosed. In the method, an ion implantation region composed of a line/space pattern is formed on a substrate at an ion implantation dose of more than 1E17 ions/cm | 2010-03-18 |
20100065866 | Inverted LED Structure with Improved Light Extraction - A light source and method for fabricating the same are disclosed. The light source includes a substrate and a light emitting structure. The substrate has a first surface and a second surface, the second surface including a curved, convex surface with respect to the first surface of the substrate. The light emitting structure includes a first layer of a material of a first conductivity type overlying the first surface, an active layer overlying the first layer, the active layer generating light when holes and electrons recombine therein, and a second layer includes a material of a second conductivity type overlying the active layer and a second surface opposite to the first surface. A mirror layer overlies the light emitting structure. | 2010-03-18 |
20100065867 | Light emitting device - A light emitting device has a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, a narrow electrode having a current feeding part provided on a region of a part above of the first semiconductor layer for supplying an electric current from outside to the semiconductor multilayer structure, and a narrow electrode provided adjacent to the current feeding part for reflecting a light emitted from the active layer, and a surface center electrode part electrically connected to the narrow electrode, and provided above the first semiconductor layer via a transmitting layer for transmitting the light. | 2010-03-18 |
20100065868 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including: a substrate; an electrode layer; and a semiconductor multilayer film disposed between the substrate and the electrode layer, the semiconductor multilayer film including: an n-type semiconductor layer; a p-type semiconductor layer; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein the semiconductor multilayer film has a light extraction surface from which a light emitted in the semiconductor multilayer film is extracted, the light extraction surface being formed with a relief structure having nano-scaled convex portions, wherein the relief structure is formed to have variation in equivalent circular diameters of the convex portions, and wherein 90% or more of the convex portions in the relief structure are configured to have circularity coefficient of (4π×(area)/(circumferential length) | 2010-03-18 |
20100065869 | Light emitting device and method for fabricating the same - A light emitting device includes a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer. A reflecting layer is provided at a side of one surface of the semiconductor multilayer structure and reflects a light emitted from the active layer. A supporting substrate of Si or Ge is provided at an opposite side of the reflecting layer with respect to the side of the semiconductor multilayer structure and supports the semiconductor multilayer structure via a metal bonding layer. A back surface electrode is provided at an opposite side of the supporting substrate with respect to a side of the metal bonding layer and includes Au alloyed with the support substrate. A hardness of the back surface electrode is higher than a hardness of the Au. | 2010-03-18 |
20100065870 | Light emitting device - A light emitting device includes a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer. A reflecting layer is provided at one surface of the semiconductor multilayer structure and reflects a light emitted from the active layer. A supporting substrate is provided at an opposite side of the reflecting layer with respect to a side of the semiconductor multilayer structure and supports the semiconductor multilayer structure via a metal bonding layer. An adhesion layer is provided at a surface of the supporting substrate at an opposite side with respect to a side of the metal bonding layer. A back surface electrode of an alloy contacts with a surface of the adhesion layer at an opposite side with respect to a surface contacting to the supporting substrate. | 2010-03-18 |
20100065871 | POLYMERS WITH TRANSMISSION INTO THE ULTRAVIOLET - An ultra violet light transmitting polymer is obtainable by the polymerisation of at least one compound having a substantially non UV absorbing core group comprising; linear or branched aliphatic hydrocarbons which may contain an aliphatic ring; or polydialkylsiloxanes. The compounds have at least one functional group comprising formula (A), (B) or (C):and each of the groups —R | 2010-03-18 |
20100065872 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device comprises: a light emitting structure comprising a first conductive type semiconductor layer, an active layer under the first conductive type semiconductor layer, and a second conductive type semiconductor layer under the active layer; a reflective electrode layer under the light emitting structure, and an outer protection layer at an outer circumference of the reflective electrode layer. | 2010-03-18 |
20100065873 | LIGHT-EMITTING DEVICE COMPRISING AN ELASTOMERIC LAYER - A light emitting device ( | 2010-03-18 |
20100065874 | LIGHT EMITTING DEVICE - A light emitting device includes: a first substrate with an end surface formed by separation on its outer edge; a second substrate including on its upper surface a first electrode and a second electrode, and at its side corner a first extraction electrode connected to the first electrode and a second extraction electrode connected to the second electrode, one end portion of the second electrode being opposed to one end portion of the first electrode, the second substrate being laminated on the first substrate so that an outer edge of the second substrate is located inside the outer edge of the first substrate; a light emitting element bonded to the first electrode; and a third substrate including a first through hole which allows emission of emitted light from the light emitting element, the third substrate being laminated on the second substrate so that an outer edge of the third substrate is located inside the outer edge of the first substrate. | 2010-03-18 |
20100065875 | OPTICAL LENS AND LIGHT EMITTING DEVICE USING THE SAME - A light emitting device includes a light-emitting semiconductor unit and an optical lens coupled to the light-emitting semiconductor unit. The optical lens includes a top surface, a base portion opposite to the top surface, and a peripheral side surface defining a first refractive portion. The top surface is generally funnel-shaped. The first refractive portion is corrugated with a plurality of protruding ridge structures, each including a refractive surface. | 2010-03-18 |
20100065876 | LED PACKAGE WITH METAL PCB - The present invention relates to a light emitting diode (LED) package. An object of the present invention is to provide an LED package having a metal PCB, which has a superior heat dissipation property and a compact structure, does not largely restrict use of conventional equipments, and is compatible with an electronic device or illumination device currently used widely. To this end, an LED package according to the present invention comprises a metal printed circuit board (PCB) formed by laminating first and second sheet metal plates with an electric insulating layer interposed therebetween; and an LED chip mounted on the first sheet metal plate of the metal PCB, wherein the first sheet metal plate has electrode patterns and leads respectively extending from the electrode patterns. | 2010-03-18 |
20100065877 | SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH IMPROVED LIGHT EXTRACTION EFFICIENCY - The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device. | 2010-03-18 |
20100065878 | ADHESIVE SHEET FOR LIGHT-EMITTING DIODE DEVICE AND LIGHT-EMITTING DIODE DEVICE - [Problem] To provide an adhesive sheet which is used for a light-emitting diode device, and which is free from cracks and peeling off of the adhered portions. | 2010-03-18 |
20100065879 | Optoelectronic Device with Housing Body - A housing body for an optoelectronic component comprises a main surface having a first area region and a second area region. The first area region and the second area region form a step in the main surface. The first area region and the second area region adjoin one another by means of an outer edge. The second area region and the outer edge enclose the first area region. | 2010-03-18 |
20100065880 | SILICONE LAMINATED SUBSTRATE, METHOD OF PRODUCING SAME, SILICONE RESIN COMPOSITION FOR PRODUCING SILICONE LAMINATED SUBSTRATE, AND LED DEVICE - A silicone laminated substrate, including a glass cloth, and a cured product of a silicone resin composition with which the glass cloth is filled and a surface of the glass cloth is coated, in which the silicone resin composition includes: (A) an organopolysiloxane having a resin structure consisting of specific siloxane units, (B) an organohydrogenpolysiloxane having a resin structure consisting of specific siloxane units, (C) a platinum group metal-based catalyst, and (D) a filler. The silicone laminated substrate exhibits excellent mechanical properties, flexibility and workability, has minimal surface tack, and is easy to handle. The silicone laminated substrate is produced by impregnating a glass cloth with the silicone resin composition that is dissolved or dispersed in a solvent, subsequently removing the solvent from the glass cloth by evaporation, and subjecting the composition impregnated into the glass cloth to heat curing under compression molding conditions. From the silicone laminated substrate that is used for an LED device, an LED device can be obtained that includes the substrate and an LED chip mounted on top of the substrate. | 2010-03-18 |
20100065881 | Light-emitting element capable of increasing amount of light emitted, light-emitting device including the same, and method of manufacturing light-emitting element and light-emitting device - A light-emitting element capable of increasing the amount of light emitted, a light-emitting device including the same, and a method of manufacturing the light-emitting element and the light-emitting device include a buffer layer having an uneven pattern formed thereon; a light-emitting structure including a first conductive pattern of a first conductivity type that is conformally formed along the buffer layer having the uneven pattern formed thereon, a light-emitting pattern that is conformally formed along the first conductive pattern, and a second conductive pattern of a second conductivity type that is formed on the light-emitting pattern; a first electrode electrically connected to the first conductive pattern; and a second electrode electrically connected to the second conductive pattern. | 2010-03-18 |
20100065882 | GLASS FOR COVERING OPTICAL ELEMENT, GLASS-COVERED LIGHT-EMITTING ELEMENT AND GLASS-COVERED LIGHT-EMITTING DEVICE - A glass-covered light-emitting element and a glass-covered light-emitting device are provided, which are covered with a glass having a low glass transition point and a thermal expansion coefficient close to that of the light-emitting element. | 2010-03-18 |
20100065883 | PROCESS FOR MAKING CONTACT WITH AND HOUSING INTEGRATED CIRCUITS - A process for producing electrical contact connections for a component integrated in a substrate material is provided, the substrate material having a first surface region, and at least one terminal contact being arranged at least partially in the first surface region for each component, which is distinguished in particular by application of a covering to the first surface region and production of at least one contact passage which, in the substrate material, runs transversely with respect to the first surface region, in which process, in order to form at least one contact location in a second surface region which is to be provided, at least one electrical contact connection from the contact location to at least one of the terminal contacts is produced via the respective contact passages. | 2010-03-18 |
20100065884 | Electrostatic Discharge Diode - The present invention relates to an electrostatic discharge diode. The electrostatic discharge diode according to exemplary embodiment of the present invention includes: an N-type well formed on a substrate; an n− region formed on the N-type well; a plurality of p− regions penetrated and formed in the n− region; a plurality of n+ regions penetrated and formed in a first layer in which the n− region and a plurality of the p− regions are formed; a plurality of n+ regions penetrated and formed in a first layer in which the n− region and a plurality of the p− regions are formed; and a plurality of p+ regions penetrated and formed in the first layer, wherein a first n+ region among a plurality of the n+ regions and a first p+ region corresponding to the first n+ region are penetrated and formed in each other region of the corresponding first p− region among a plurality of the p− regions. | 2010-03-18 |
20100065885 | SOI DEVICE WITH MORE IMMUNITY FROM STUBSTRATE VOLTAGE - A semiconductor on insulator device has an insulator layer, an active layer ( | 2010-03-18 |
20100065886 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - According to an aspect of the present invention, there is provided a semiconductor device including: a substrate that includes a semiconductor region including Ge as a primary component; a compound layer that is formed above the semiconductor region, that includes Ge and that has a non-metallic characteristic; an insulator film that is formed above the compound layer; an electrode that is formed above the insulator film; and source/drain regions that is formed in the substrate so as to sandwich the electrode therebetween. | 2010-03-18 |
20100065887 | FIELD EFFECT TRANSISTOR SOURCE OR DRAIN WITH A MULTI-FACET SURFACE - FET configurations in which two (or more) facets are exposed on a surface of a semiconductor channel, the facets being angled with respect to the direction of the channel, allow for conformal deposition of a convex or concave S/D. A convex tip of the S/D enhances electric fields at the interface, reducing the resistance between the S/D and the channel. In contrast, a S/D having a concave tip yields a dual-gate FET that emphasizes reduced short-channel effects rather than electric field enhancement. The use of self-limiting, selective wet etches to expose the facets facilitates process control, control of interface chemistry, and manufacturability. | 2010-03-18 |
20100065888 | High mobility tri-gate devices and methods of fabrication - A high mobility semiconductor assembly. In one exemplary aspect, the high mobility semiconductor assembly includes a first substrate having a first reference orientation located at a <110> crystal plane location on the first substrate and a second substrate formed on top of the first substrate. The second substrate has a second reference orientation located at a <100> crystal plane location on the second substrate, wherein the first reference orientation is aligned with the second reference orientation. In another exemplary aspect, the second substrate has a second reference orientation located at a <110> crystal plane location on the second substrate, wherein the second substrate is formed over the first substrate with the second reference orientation being offset to the first reference orientation by about 45 degrees. | 2010-03-18 |
20100065889 | Porous device for optical and electronic applications and method of fabricating the porous device - A porous device for optical and electronic applications comprises a single crystal substrate and a porous single crystal structure epitaxially disposed on the substrate, where the porous single crystal structure includes a three-dimensional arrangement of pores. The three-dimensional arrangement may also be a periodic arrangement. A method of fabricating such a device includes forming a scaffold comprising interconnected elements on a single crystal substrate, where the interconnected elements are separated by voids. A first material is grown epitaxially on the substrate and into the voids. The scaffold is then removed to obtain a porous single crystal structure epitaxially disposed on the substrate, where the single crystal structure comprises the first material and includes pores defined by the interconnected elements of the scaffold. | 2010-03-18 |
20100065890 | Semiconductor Substrate of GaAs and Semiconductor Device - A semiconductor substrate, of GaAs with a semiconductor layer sequence applied on top of the substrate. The semiconductor layer sequence comprises a plurality of semiconductor layers of Al | 2010-03-18 |
20100065891 | Compact Memory Arrays - Embodiments of the invention describe compact memory arrays. In one embodiment, the memory cell array includes first, second, and third gate lines disposed over a substrate, the second gate lines are disposed between the first and the third gate lines. The first, the second, and the third gate lines form adjacent gate lines of the memory cell array. The memory cell array further includes first metal lines disposed over the first gate lines, the first metal lines coupled to the first gate lines; second metal lines disposed over the second gate lines, the second metal lines coupled to the second gate lines; and third metal lines disposed over the third gate lines, the third metal lines coupled to the third gate lines. The first metal lines, the second metal lines and the third metal lines are disposed in different metallization levels. | 2010-03-18 |
20100065892 | Bio-sensor and method of manufacturing the same - A bio-sensor includes a gate dielectric formed on a silicon semiconductor substrate, a gate electrode of a conductive diamond film formed on the gate dielectric, probe molecules bonded on the gate electrode for detecting biomolecules, and source/drain regions formed on the semiconductor substrate at the sides of the gate electrode. The gate electrode is a comb shape or a lattice shape. | 2010-03-18 |
20100065893 | SEMICONDUCTOR MEMORY STRUCTURE WITH STRESS REGIONS - A semiconductor memory structure with stress regions includes a substrate defining a first and a second device zone; a first and a second stress region formed in each of the first and second device zone to yield stress different in level; a barrier plug separating the two device zones from each other; and a plurality of oxide spacers being located between the first stress regions and the barrier plug while in direct contact with the first stress regions. Due to the stress yielded at the stress regions, increased carrier mobility and accordingly, increased reading current can be obtained, and only a relatively lower reading voltage is needed to obtain an initially required reading current. As a result, the probability of stress-induced leakage current is reduced to enhance the data retention ability. | 2010-03-18 |
20100065894 | Semiconductor Device Having a Field Effect Source/Drain Region - A semiconductor device includes an active region defined in a semiconductor substrate, and gate electrodes crossing over the active region. Source/drain regions are defined in the active region on two sides of the gate electrode. At least one of the source/drain regions is a field effect source/drain region generated by a fringe field of the gate. The other source/drain region is a PN-junction source/drain region having different impurity fields and different conductivity than the substrate. At least one of the source/drain regions is a field effect source/drain region. Accordingly, a short channel effect is reduced or eliminated in the device. | 2010-03-18 |
20100065895 | Method for producing at least one porous layer - A method for producing at least one porous layer on a substrate, whereby a suspension, which contains particles from a layer-forming material or molecular precursors of the layer-forming material, as well as at least one organic component, is applied to the substrate, the precursors of the layer-forming material are subsequently reacted to produce the layer-forming material following application to the substrate, in a next step, the particles from the layer-forming material are sintered, and the at least one organic component is subsequently removed. Also, a field-effect transistor having at least one gate electrode, the gate electrode having an electrically conductive, porous coating which was applied in accordance with the method. | 2010-03-18 |
20100065896 | Image sensor including a pixel cell having an epitaxial layer, system having the same, and method of forming a pixel cell - A pixel cell includes a substrate, an epitaxial layer, and a photo converting device in the epitaxial layer. The epitaxial layer has a doping concentration profile of embossing shape, and includes a plurality of layers that are stacked on the substrate. The photo converting device does not include a neutral region that has a constant potential in the vertical direction. Therefore, the image sensor including the pixel cell has high quantization efficiency, and a crosstalk between photo-converting devices is decreased. | 2010-03-18 |
20100065897 | CMOS Image Sensor and Method for Fabricating the Same - A CMOS image sensor and a method for fabricating the same are disclosed. The method includes forming a plurality of color filters on a substrate, each color filter having a curvature, and forming microlenses on the color filters that each has a radius of curvature that varies with the wavelength of the color filter on which it is formed. | 2010-03-18 |
20100065898 | Integrated circuit semiconductor device having different gate stacks in cell region and core/peripheral region and method of manufacturing the same - The integrated circuit semiconductor device includes a semiconductor substrate having a cell region and a core/peripheral region, a first gate stack including a first gate insulating film and a first gate electrode on the semiconductor substrate in the cell region, wherein the first gate insulating film includes a silicon oxide film and the first gate electrode includes a poly-silicon film doped with impurities, and a second gate stack including a second gate insulating film and a second gate electrode on the semiconductor substrate of the core/peripheral region, the second gate insulating film includes a high dielectric film having a higher dielectric constant than that of the silicon oxide film and the second gate electrode includes a metal film. | 2010-03-18 |
20100065899 | SEMICONDUCTOR DEVICES INCLUDING AUXILIARY GATE ELECTRODES AND METHODS OF FABRICATING THE SAME - A semiconductor device may include first and second auxiliary gate electrodes and a semiconductor layer crossing the first and second auxiliary gate electrodes. A primary gate electrode may be provided on the semiconductor layer so that the semiconductor layer is between the primary gate electrode and the first and second auxiliary gate electrodes. Moreover, the first and second auxiliary gate electrodes may be configured to induce respective first and second field effect type source/drain regions in the semiconductor layer. Related methods are also discussed. | 2010-03-18 |
20100065900 | SEMICONDUCTOR DEVICE INCLUDING RESISTANCE ELEMENT - A semiconductor device includes a resistance element. The resistance element includes a first and second conductive films, second insulating film, and contact plugs. The first conductive film is formed on a semiconductor substrate with a first insulating film interposed therebetween. The second insulating film is formed on the first conductive film. The second conductive film is formed on the second insulating film. In the first connection portion, the second insulating film is removed. The first connection portion connects the first conductive film and the second conductive film together. The contact plugs are formed on the second conductive film. The contact plugs are arranged such that a region located on the second conductive film and immediately above the connection portion is sandwiched between the contact plugs. | 2010-03-18 |
20100065901 | Electrically programmable and erasable memory device and method of fabrication thereof - The present memory device includes a substrate, a tunneling layer over the substrate, a floating gate over the tunneling layer, a dielectric over the floating gate and including silicon oxynitride, and a control gate over the dielectric. A method for fabricating such a memory device is also provided, including various approaches for forming the silicon oxynitride. | 2010-03-18 |
20100065902 | SCALABLE HIGH DENSITY NON-VOLATILE MEMORY CELLS IN A CONTACTLESS MEMORY ARRAY - A plurality of mesas are formed in the substrate. Each pair of mesas forms a trench. A plurality of diffusion areas are formed in the substrate. A mesa diffusion area is formed in each mesa top and a trench diffusion area is formed under each trench. A vertical, non-volatile memory cell is formed on each sidewall of the trench. Each memory cell is comprised of a fixed threshold element located vertically between a pair of non-volatile gate insulator stacks. In one embodiment, each gate insulator stack is comprised of a tunnel insulator formed over the sidewall, a deep trapping layer, and a charge blocking layer. In another embodiment, an injector silicon rich nitride layer is formed between the deep trapping layer and the charge blocking layer. | 2010-03-18 |
20100065903 | High-voltage vertical transistor with a varied width silicon pillar - In one embodiment, a vertical HVFET includes a pillar of semiconductor material a pillar of semiconductor material arranged in a loop layout having at least two substantially parallel and substantially linear fillet sections each having a first width, and at least two rounded sections, the rounded sections having a second width narrower than the first width, a source region of a first conductivity type being disposed at or near a top surface of the pillar, and a body region of a second conductivity type being disposed in the pillar beneath the source region. First and second dielectric regions are respectively disposed on opposite sides of the pillar, the first dielectric region being laterally surrounded by the pillar, and the second dielectric region laterally surrounding the pillar. First and second field plates are respectively disposed in the first and second dielectric regions. | 2010-03-18 |
20100065904 | High density trench field effect transistor - A semiconductor structure comprises trenches extending into a semiconductor region. Portions of the semiconductor region extend between adjacent trenches forming mesa regions. A gate electrode is in each trench. Well regions of a first conductivity type extend in the semiconductor region between adjacent trenches. Source regions of a second conductivity type are in the well regions. Heavy body regions of the first conductivity type are in the well regions. The source regions and the heavy body regions are adjacent trench sidewalls, and the heavy body regions extend over the source regions along the trench sidewalls to a top surface of the mesa regions. | 2010-03-18 |
20100065905 | Structures and Methods for Reducing Dopant Out-diffusion from Implant Regions in Power Devices - A semiconductor structure comprises a drift region of a first conductivity type in a semiconductor region. A well region of a second conductivity type is over the drift region. A source region of the first conductivity type is in an upper portion of the well region. A heavy body region of the second conductivity type extends in the well region. The heavy body region has a higher doping concentration than the well region. A first diffusion barrier region at least partially surrounds the heavy body region. A gate electrode is insulated from the semiconductor region by a gate dielectric. | 2010-03-18 |