11th week of 2011 patent applcation highlights part 12 |
Patent application number | Title | Published |
20110062373 | MAGNETOCALORIC STRUCTURE - A magnetocaloric structure includes a magnetocaloric material and at least one protective layer. The magnetocaloric material has bar type or plank type. The protective layer is disposed on the magnetocaloric material. | 2011-03-17 |
20110062374 | CMP slurry for metallic film, polishing method and method of manufacturing semiconductor device - A CMP slurry for metallic film is provided, which includes water, 0.01 to 0.3 wt %, based on a total quantity of the slurry, of polyvinylpyrrolidone having a weight average molecular weight of not less than 20,000, an oxidizing agent, a protective film-forming agent containing a first complexing agent for forming a water-insoluble complex and a second complexing agent for forming a water-soluble complex, and colloidal silica having a primary particle diameter ranging from 5 to 50 nm. | 2011-03-17 |
20110062375 | SILICON WAFER RECLAMATION PROCESS - An etchant for removing a porous low-k dielectric layer on a semiconductor substrate includes a hydrofluoric acid-based solvent, a dilating additive for dilating the pores in the porous low-k dielectric, and a passivating additive that forms a passivation layer at the interface between the low-k dielectric layer and the semiconductor substrate. | 2011-03-17 |
20110062376 | Composition and method for polishing bulk silicon - The invention provides a polishing composition comprising (a) silica, (b) one or more compounds that increases the removal rate of silicon, (c) one or more tetraalkylammonium salts, and (d) water, wherein the polishing composition has a pH of about 7 to about 11. The invention further provides a method of polishing a substrate with the polishing composition. | 2011-03-17 |
20110062377 | Clarification of water and wastewater - A process and method for liquid-solid separation in raw water by chemical treatment, comprising adding into the water, separately or together, an effective amount of at least one aluminum polymer with an effective amount of an ammonium polymer, including at least one medium, high, or very high molecular weight ammonium polymer, to clarify said raw water to a settled turbidity standard, and including methods for blending and storing solution polymers. | 2011-03-17 |
20110062378 | CATHODE ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY - Disclosed herein is a cathode active material based on lithium nickel oxide represented by Formula 1, wherein the lithium nickel oxide has a nickel content of at least 40% among overall transition metals and is coated with a polymer having a melting point of 80 to 300° C. at a surface thereof. A lithium secondary battery having the disclosed cathode active material has advantages of not deteriorating electrical conductivity while maintaining high temperature stability, so as to efficiently provide high charge capacity. | 2011-03-17 |
20110062379 | NEGATIVE ELECTRODE FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERIES AND LITHIUM ION SECONDARY BATTERY - A negative electrode comprising (A) particles having Si dispersed in SiO, and (B) a polyamide-imide resin which contains amide and imide groups in an amide/imide ratio of 25/75 to 99/1 and has a weight average molecular weight of 10,000-200,000 is suited for nonaqueous electrolyte secondary batteries. The electrode exhibits a high 1st cycle charge/discharge efficiency and improved cycle performance while maintaining a high battery capacity and a low volume expansion. | 2011-03-17 |
20110062380 | PROCESS FOR PREPARING ELECTROACTIVE INSERTION COMPOUNDS AND ELECTRODE MATERIALS OBTAINED THEREFROM - A process for preparing an at least partially lithiated transition metal oxyanion-based lithium−ion reversible electrode material, which includes providing a precursor of said lithium−ion reversible electrode material, heating said precursor, melting same at a temperature sufficient to produce a melt including an oxyanion containing liquid phase, cooling said melt under conditions to induce solidification thereof and obtain a solid electrode that is capable of reversible lithium ion deinsertion/insertion cycles for use in a lithium battery. Also, lithiated or partially lithiated oxyanion-based-lithium−ion reversible electrode materials obtained by the aforesaid process. | 2011-03-17 |
20110062381 | METHODS FOR MAKING BRINES - Methods for making brines may generally comprise forming a mixture comprising: (i) a solid material produced as a by-product of the Kroll process including solid anhydrous magnesium chloride and solid elemental magnesium; (ii) an amount of a previously-produced brine; and (iii) an amount of water sufficient to provide a predetermined brine concentration. At least a portion of the solid material in the mixture is dissolved while simultaneously controlling the temperature of the mixture. At least a portion of insoluble matter is separated from the mixture. | 2011-03-17 |
20110062382 | SEPARATING COMPOSITIONS - A water-based separating composition for separating hydrocarbons from hydrocarbon-containing material includes at least about 71% by weight water, a hydrotropic agent, a dispersant having flocculating characteristics, a wetting agent, and at least one acid and at least one base in amounts sufficient to provide the separating composition with a pH of about 7 to about 8.5. The hydrotropic agent and the dispersant having flocculating characteristics are different. | 2011-03-17 |
20110062383 | LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - Disclosed are: a liquid crystal composition which satisfies at least one property selected from a high upper limit temperature in a nematic phase, a low lower limit temperature in a nematic phase, a low viscosity, high optical anisotropy, high dielectric anisotropy, a high specific resistance, high stability against ultraviolet ray, high stability against heat and the like or has a proper balance between at least two properties selected from the above-mentioned properties; and an AM element having a short response time, a high voltage holding ratio, a high contrast ratio, a long service life and the like. Specifically disclosed are: a liquid crystal composition which comprises a specific pentacyclic compound having high optical anisotropy and high dielectric anisotropy as the first component, a specific compound having a low viscosity as the second component, and a specific tetracyclic compound having a high upper limit temperature as the third component, and which shows a nematic phase; and a liquid crystal display element comprising the composition. | 2011-03-17 |
20110062384 | Liquid Crystal Composition and Liquid Crystal Display Device - Subject The subject is to provide a liquid crystal composition that satisfies at least one of characteristics such as a high maximum temperature of a nematic phase, a low minimum temperature of a nematic phase, a small viscosity, a suitable optical anisotropy, a large dielectric anisotropy, a large elastic constant ratio, a small temperature dependence of the threshold voltage, a small frequency dependence of the dielectric anisotropy and a short helical pitch, or that is suitably balanced regarding at least two of the characteristics. The subject is to provide a STN device that has a short response time, a large contrast ratio, a low threshold voltage, a small electric power consumption, a steep voltage-transmission curve and a small light leak. | 2011-03-17 |
20110062385 | BENT-CORE LC DECORATED GOLD NANOCLUSTERS - Novel thiol-terminated bent-core liquid crystals (LCs) are used to decorate gold nanoparticles. Thioacetate or xanthate/xanthogenate functional groups are used to effect the attachment of the LCs to the gold nanoparticles. Such bent-core decorated nanoparticles may be dissolved in bent-core liquid crystal host media to provide polarizable systems which respond quickly to applied electric fields and exhibit other interesting and useful optical and electro-optic behaviour. | 2011-03-17 |
20110062386 | COMPOUNDS FOR ORGANIC LIGHT EMITTING DIODE EMISSIVE LAYERS - Disclosed herein are compounds represented by a formula: | 2011-03-17 |
20110062387 | METHOD FOR THE CATALYTIC REDUCTION OF THE TAR CONTENT IN GASES FROM GASIFICATION PROCESSES USING A CATALYST BASED ON NOBLE METALS - The invention relates to a method for reducing the tar content in gases resulting from a thermochemical gasification process of carbon-containing starting material and includes contacting of at least a part of the gas obtained from the gasification process with a catalyst containing noble metals. The invention is further characterized in that the gas to be treated is not brought into contact with a zirconium-based catalyst prior to the contract with the catalyst containing noble metals. The catalyst containing noble metals comprises at least one noble metal selected from the group consisting of Pt, Pd, Rh, Ir, Os, Ru and Re, provided that, in the case that the noble metal chosen is Pt, Pt is used in combination with at least one further noble metal or Ni. | 2011-03-17 |
20110062388 | Formulations for Voltage Switchable Dielectric Materials Having a Stepped Voltage Response and Methods for Making the Same - Formulations for voltage switchable dielectric materials include two or more different types of semiconductive materials uniformly dispersed within a dielectric matrix material. The semiconductive materials are selected to have different bandgap energies in order to provide the voltage switchable dielectric material with a stepped voltage response. The semiconductive materials may comprise inorganic particles, organic particles, or an organic material that is soluble in, or miscible with, the dielectric matrix material. Formulations optionally can also include electrically conductive materials. At least one of the conductive or semiconductive materials in a formulation can comprise particles characterized by an aspect ratio of at least 3 or greater. | 2011-03-17 |
20110062389 | CONDUCTIVE MATERIAL FORMED USING LIGHT OR THERMAL ENERGY, METHOD FOR FORMING THE SAME AND NANO-SCALE COMPOSITION - An electrically conductive material includes a plurality of nanowires and a plurality of nanoconnectors. The ratio by weight of the plurality of nanowires to the plurality of nanoconnectors is in a range of from 1:9 to 9:1. Nanoconnectors can be heated by thermal energy or light energy so that the nanoconnectors can be closely interconnected to each other and to nanowires, resulting in significant increase of the electrical conductivity of the electrically conductive material. | 2011-03-17 |
20110062390 | DERIVATIVES OF NANOMATERIALS AND RELATED DEVICES AND METHODS - A functionalized trimetallic nitride endohedral fullerene based material can be represented according to the formula: A3-nXnN@Cm (R)o, wherein: where A and X are one or a combination of the following metal atoms: Sc, Y, La, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er, Tm, Lu; (n=0-3); N is nitrogen; Cm is a fullerene and m=about 60-about 200; and R is an organic, inorganic, or organometallic species. Related compositions, devices and methods are also described. | 2011-03-17 |
20110062391 | MANUFACTURING METHOD OF COMPOUND SEMICONDUCTOR MATERIAL, AND COMPOUND SEMICONDUCTOR MATERIAL USING THE SAME - The present invention provides a manufacturing method of group III-V compound semiconductor material including a step of making a metal oxide nano-particle of a group III metal element reductively react to a group-V-element-containing compound in order to manufacture compound semiconductor material comprised of two or more element compounds. | 2011-03-17 |
20110062392 | SYSTEMS AND METHODS FOR PRODUCING HYPERPOLARIZED MATERIALS AND MIXTURES THEREOF - The present disclosure provides various methods and systems for manufacture, transport and delivery of material including highly polarized nuclei that is in a hyperpolarized state. | 2011-03-17 |
20110062393 | SINTERED GLASS CERAMIC AND METHOD FOR PRODUCING THE SAME - The invention provides a method for producing a glass ceramic comprising the steps of melting a starting glass that is free from alkali, except for incidental contamination, and that contains at least one garnet-forming agent and at least one oxide of a lanthanoid; grinding the starting glass to produce a glass frit; molding by pressing and sintering the glass frit until at least one garnet phase containing lanthanoids is formed. A glass ceramic produced in this way may contain 5-50% by weight of SiO | 2011-03-17 |
20110062394 | RARE EARTH-DOPED SAPPHIRE FILMS AND RELATED METHODS - The present invention relates to the growth of single phase rare earth-doped sapphire (α-Al | 2011-03-17 |
20110062395 | UV CURABLE LIQUID PRE-POLYMER, AND LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME AND MANUFACTURING METHOD THEREOF - A liquid-crystal display includes a first substrate and a second substrate disposed opposite the first substrate, and a plurality of pixel areas formed on the first substrate, where each pixel area has red, green, blue, and white sub-pixel areas. Red, green and blue color filter layers are disposed on the red, green and blue sub-pixel areas, respectively, and an overcoat layer is disposed over the red, green and blue color filter layers, where a portion of the overcoat layer forms a white color filter layer in the white sub-pixel area. The overcoat layer is formed from a UV-curable liquid pre-polymer material, which includes monomers each having a mono-functional group, and at least a di-functional group or a tri-functional group. | 2011-03-17 |
20110062396 | CHROMENE COMPOUND - A chromene compound represented by the following formula (1): | 2011-03-17 |
20110062397 | ACTINIDE/BERYLLIUM NEUTRON SOURCES WITH REDUCED DISPERSION CHARACTERISTICS - Neutron source comprising a composite, said composite comprising crystals comprising BeO and AmBe | 2011-03-17 |
20110062398 | POST PULLING DEVICE - The present invention relates to a post-pulling device for the extraction of T-shaped posts and a method of using the same. The post-pulling device according to the present invention includes: an I-beam body; a pull chain, where said pull chain is permanently attached to a first end of the I-beam body; and a post insertion opening near a second end of the I-beam body, where said opening allows for the insertion of a T-shaped posted. The pull chain may be welded to the I-beam body. In one particular embodiment, the I-beam body may include two beveled sidewalls and the opening may be a T-shaped opening. | 2011-03-17 |
20110062399 | GRAIN BIN LIFTING SYSTEM AND METHOD - A building and grain bin lifting system utilizing a combination of lifting assemblies for lifting building and grain bin components. The lifting assembly includes a mobile supporting structure, a jack disposed within the mobile supporting structure configured to linearly travel, a mounting bracket attached to the jack, connectably interfacing with a building component, an exclusive power source for providing operating power to the jack, an onboard controller enabling selective raise/lower activation of the jack, and a remote control unit in communication with the controller allowing an operator to operate one or more controls associated with the lifting assembly. | 2011-03-17 |
20110062400 | TOOL - The invention relates to a tool ( | 2011-03-17 |
20110062401 | ADJUSTABLE HYDRAULIC HORIZONTAL JACK - An adjustable hydraulic horizontal jack including a frame, a hydraulic unit, a jib unit, link rods, and a handle. Here, the structures of the jib and the link rod(s) are improved according to an embodiment. With the improved structures, the jack has rational structures and can act reliably. In addition, under the parameters equivalent to those of conventional hydraulic horizontal jacks, the jack of an embodiment of the present invention can change the height of the lowest position and the load by adjusting the length of the jib and link rods. Therefore, the jack is adapted to jacking up not only a light automobile with a low chassis but also a heavy automobile with a high chassis, thus having a wider scope of application. | 2011-03-17 |
20110062402 | Anti-Ram Vehicle Barrier - A gate assembly according to one or more aspects of the present disclosure comprises a cable extending across a panel, the panel movable between a closed position blocking an entry port and an open position; a latch post secured in the ground on a first side of the entry port, wherein a first end of the cable connected to the latch post when the panel is in the closed position; and a post device secured in the ground on a second side of the entry port, the panel positioned through a passage of the post device. | 2011-03-17 |
20110062403 | Anti-Ram Vehicle Barrier System - An anti-ram vehicle barrier system adapted to arrest an impacting vehicle of substantial mass within a selected distance of the barrier. The distance is approximately 36 inches for a vehicle having a mass of at least about 15,000 pounds and traveling at least about 30 mph upon impact with the barrier. The barrier system includes a fence portion and/or a gate for selectively allowing passage through an entry port. The fence portion includes a pair of terminal posts positioned in and secured to the ground in a spaced apart relationship and cables connected between the terminal posts. The gate includes a cable extending across a panel that is connected on opposing ends to opposing posts positioned on opposite sides of the entry point. For passage the panel is moved relative to the posts. The panel is moved vertically relative to the ground in some embodiments and laterally in other embodiments. | 2011-03-17 |
20110062404 | Wire-Mesh Security Fence and Fence Panel - A wire-mesh security fence panel and security fence is provided. In at least on example the fence panel includes: a first set of substantially parallel wires, each wire having a first and a second end; a second set of substantially parallel wires, the second set of wires being welded across the first set on one picket-wire side of the first set; a cross-wire-side connection strip welded across the first end of the first set on the picket-wire side of the first set; and an opposite side connection strip welded across the second end of the first set on the opposite side of the picket-wire side. In one such example each connection strip has an outside edge and each outside edge is equally spaced from the end of the wires to which the strip is welded. | 2011-03-17 |
20110062405 | INFORMATION RECORDING AND REPRODUCING DEVICE - According to one embodiment, an information recording and reproducing device includes a first layer, a second layer, and a recording layer between the first and second layers, which is capable of a transition between a first state of a low resistance and a second state of a high resistance by flowing a current between the first and second layers. A peripheral portion of the recording layer has a composition different from that of a center portion of the recording layer. The center portion includes two kinds of cation elements. And the center portion is different from the peripheral portion in a ratio of the two kinds of cation elements. | 2011-03-17 |
20110062406 | Memory Devices and Formation Methods - A method includes forming an electrical insulator material over an integrated circuit having a metal-containing conductive interconnect and activating a dopant in a semiconductor material of a substrate to provide a doped region. The doped region provides a junction of opposite conductivity types. After activating the dopant, the substrate is bonded to the insulator material and at least some of the substrate is removed where bonded to the insulator material. After the removing, a memory cell is formed having a word line, an access diode, a state-changeable memory element containing chalcogenide phase change material, and a bit line all electrically connected in series, the access diode containing the junction as a p-n junction. A memory device includes an adhesion material over the insulator material and bonding the word line to the insulator material. | 2011-03-17 |
20110062407 | INFORMATION RECORDING AND REPRODUCING DEVICE - According to one embodiment, an information recording and reproducing device includes a recording layer which includes a typical element and a transition element, and stores a state of a first electric resistivity and a state of a second electric resistivity different from the first electric resistivity by a movement of the typical element, and an electrode layer which is disposed at one end of the recording layer to apply a voltage or a current to the recording layer. The recording layer includes a first region which is in contact with the electrode layer and the electrode layer includes a second region which is in contact with the recording layer. The first and second regions are opposite to each other. And the first and second regions include the typical element, and a concentration of the typical element in the first region is higher than that in the second region. | 2011-03-17 |
20110062408 | PROGRAMMABLE METALLIZATION CELL STRUCTURE INCLUDING AN INTEGRATED DIODE, DEVICE INCLUDING THE STRUCTURE, AND METHOD OF FORMING SAME - A microelectronic programmable structure suitable for storing information and array including the structure and methods of forming and programming the structure are disclosed. The programmable structure generally includes an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying energy to the structure, and thus information may be stored using the structure. | 2011-03-17 |
20110062409 | PHASE CHANGE MEMORY STRUCTURE WITH MULTIPLE RESISTANCE STATES AND METHODS OF PROGRAMMING AND SENSING - A phase change memory structure with multiple resistance states and methods of forming, programming, and sensing the same. The memory structure includes two or more phrase change elements provided between electrodes. Each phase change element has a respective resistance curve as a function of programming voltage which is shifted relative to the resistance curves of other phase change elements. In one example structure using two phase change elements, the memory structure is capable of switching among four resistance states. | 2011-03-17 |
20110062410 | METHOD FOR MORPHOLOGICAL CONTROL AND ENCAPSULATION OF MATERIALS FOR ELECTRONICS AND ENERGY APPLICATIONS - An electronic device comprises a drawn glass tube having opposing ends, a semiconductive material disposed inside of the drawn glass tube, and a first electrode and a second electrode disposed at the opposing ends of the drawn glass tube. A method of making an electrical device comprises disposing a semiconductive material inside of a glass tube, and drawing the glass tube with the semiconductive material disposed therein to form a drawn glass tube. The method of making an electrical device also comprises disposing a first electrode and a second electrode on the opposing ends of the drawn glass tube to form an electric device. | 2011-03-17 |
20110062411 | MOSFET with a Nanowire Channel and Fully Silicided (FUSI) Wrapped Around Gate - Nanowire-channel metal oxide semiconductor field effect transistors (MOSFETs) and techniques for the fabrication thereof are provided. In one aspect, a MOSFET includes a nanowire channel; a fully silicided gate surrounding the nanowire channel; and a raised source and drain connected by the nanowire channel. A method of fabricating a MOSFET is also provided. | 2011-03-17 |
20110062412 | LIGHT-EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR - A light emitting element according to an exemplary embodiment includes: a support substrate; a second electrode layer formed on the support substrate; a current spreading layer formed on the support substrate; a second conductive semiconductor layer formed on the second electrode layer and the current spreading layer; an active layer formed on the second conductive semiconductor layer; a first conductive semiconductor layer formed on the active layer; and a first electrode layer formed on the first conductive semiconductor layer. | 2011-03-17 |
20110062413 | LIGHT-EMITTING DIODE AND METHOD FOR FABRICATION THEREOF - A light-emitting diode includes a substrate, a compound semiconductor layer including a p-n junction-type light-emitting part formed on the substrate, an electric conductor disposed on the compound semiconductor layer and formed of an electrically conductive material optically transparent to the light emitted from the light-emitting part and a high resistance layer possessing higher resistance than the electric conductor and provided in the middle between the compound semiconductor layer and the electric conductor. In the configuration of a light-emitting diode lamp, the electric conductor and the electrode disposed on the semiconductor layer on the side opposite to the electric conductor across the light-emitting layer are made to assume an equal electric potential by means of wire bonding. The light-emitting diode abounds in luminance and excels in electrostatic breakdown voltage. | 2011-03-17 |
20110062414 | LIGHT EMITTING DEVICES - A new light emitting device is disclosed, including a polarizing surface layer, a light emitting layer which emits light at a wavelength, and a light transformation layer disposed between the light emitting layer and the reflective layer, wherein the light emitting layer is disposed between the reflective layer and the polarizing surface layer, and an optical thickness between the light emitting layer and the reflective layer is less than a value of five times of a quarter of the wavelength. | 2011-03-17 |
20110062415 | ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PARTIALLY OR FULLY RELAXED ALUMINUM INDIUM GALLIUM NITRIDE LAYERS WITH MISFIT DISLOCATIONS - An epitaxial structure for a III-Nitride based optical device, comprising an active layer with anisotropic strain on an underlying layer, where a lattice constant and strain in the underlying layer are partially or fully relaxed in at least one direction due to a presence of misfit dislocations, so that the anisotropic strain in the active layer is modulated by the underlying layer. | 2011-03-17 |
20110062416 | NANOWIRE-BASED PHOTODIODE - A nanowire-based photodiode and an interdigital p-i-n photodiode use an i-type semiconductor nanowire in an i-region of the photodiode. The nanowire-based photodiode includes a first sidewall of a first semiconductor doped with a p-type dopant, a second sidewall of the first semiconductor doped with an n-type dopant, and an intrinsic semiconductor nanowire that spans a trench between the first and second sidewalls. The trench is wider at a top than at a bottom adjacent to a substrate. The first semiconductor of one or both of the first sidewall and the second sidewall is single crystalline and together the first sidewall, the nanowire and the second sidewall form a p-i-n semiconductor junction of the photodiode. | 2011-03-17 |
20110062417 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - First semiconductor layers are in source/drain regions on the semiconductor substrate. A second semiconductor layer comprises first portions on the first semiconductor layers and a second portion on a channel region between the source/drain regions. Third semiconductor layers are on the first portions of the second semiconductor layer. A gate electrode is around the second portion of the second semiconductor layer via an insulating film. Contact plugs are in the first semiconductor layers, the first portions of the second semiconductor layers and the third semiconductor layers in the source/drain regions. A diameter of the contact plug in the second semiconductor layer is smaller than a diameter of the contact plug in the first and third semiconductor layers. | 2011-03-17 |
20110062418 | MOLECULAR TRANSISTOR DRIVING OF NANOSCALE ACTUATORS FROM DIFFERENTIAL AMPLIFIER CIRCUITS COMPATIBLE WITH CARBON NANOTUBE SENSORS AND TRANSDUCERS - A carbon nanotube electronic circuit utilizing a differential amplifier is implemented on a single carbon nanotube. Field effect transistors are formed from a first group of electrical conductors in contact with the carbon nanotube and a second group of electrical conductors insulated from, but exerting electric fields on, the carbon nanotube form the gates of the field effect transistors. A signal input circuit has a first input portion and a second input portion. A first field effect transistor electrically responsive to a first incoming signal is formed on the first input portion. A carbon nanotube actuator having electrical terminals and responsive to electrical conditions is an electrical load. A current source, connected to the signal input circuit, is formed on the carbon nanotube from one or more second field effect transistors. The electrical load is connected to the signal input circuit, and the signal input circuit and current source together form a differential amplifier to operate the actuator responsive to the incoming signal. | 2011-03-17 |
20110062419 | FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME - Provided is a carbon nanotube field effect transistor manufacturing method wherein carbon nanotube field effect transistors having excellent stable electric conduction property are manufactured with excellent reproducibility. After arranging carbon nanotubes to be a channel on a substrate, the carbon nanotubes are covered with an insulating protection film. Then, a source electrode and a drain electrode are formed on the insulating protection film. At this time, a contact hole is formed on the protection film, and the carbon nanotubes are connected with the source electrode and the drain electrode. Then, a wiring protection film, a conductive film and a plasma CVD film are sequentially formed on the insulating protection film, the source electrode and the drain electrode. In the field effect transistor thus manufactured, since the carbon nanotubes to be the channel are not contaminated and not damaged, excellent stable electric conductive property is exhibited. | 2011-03-17 |
20110062420 | Quantum well thermoelectric module - Quantum well thermoelectric modules and a low-cost method of mass producing the modules. The devices are comprised of n-legs and p-legs, each leg being comprised of layers of quantum well material in the form of very thin alternating layers. In the n-legs the alternating layers are layers of n-type semiconductor material and electrical insulating material. In the p-legs the alternating layers are layers of p-type semiconductor material and electrical insulating material. Both n-legs and p-legs are comprised of materials providing similar thermal expansion. In preferred embodiments the layers, referred to as super-lattice layers are about 4 nm to 20 nm thick. The layers of quantum well material is separated by much larger layers of thermal and electrical insulating material such that the volume of insulating material in each leg is at least 20 times larger than the volume of quantum well material. | 2011-03-17 |
20110062421 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - First semiconductor layers are in source/drain regions on the semiconductor substrate. A second semiconductor layer comprises first portions on the first semiconductor layers and a second portion in a linear form in a channel region between the source/drain regions. A gate electrode is around the second portion of the second semiconductor layer via an insulating film. A film thickness of the second portion of the second semiconductor layer is smaller than a film thickness of the first portion of the second semiconductor layer. | 2011-03-17 |
20110062422 | Systems And Methods For Forming Defects On Graphitic Materials And Curing Radiation-Damaged Graphitic Materials - Systems and methods are disclosed herein for forming defects on graphitic materials. The methods for forming defects include applying a radiation reactive material on a graphitic material, irradiating the applied radiation reactive material to produce a reactive species, and permitting the reactive species to react with the graphitic material to form defects. Additionally, disclosed are methods for removing defects on graphitic materials. | 2011-03-17 |
20110062423 | TUNABLE TERAHERTZ RADIATION SOURCE - Terahertz radiation source and method of producing terahertz radiation, said source comprising a junction stack, said junction stack comprising a crystalline material comprising a plurality of self-synchronized intrinsic Josephson junctions; an electrically conductive material in contact with two opposing sides of said crystalline material; and a substrate layer disposed upon at least a portion of both the crystalline material and the electrically-conductive material, wherein the crystalline material has a c-axis which is parallel to the substrate layer, and wherein the source emits at least 1 mW of power. | 2011-03-17 |
20110062424 | POLYMER COMPOSITIONS COMPRISING ADDITIVE BLOCK COPOLYMERS - Disclosed herein are some embodiments related to a polymer composition comprising a base polymer and a block copolymer additive. Laminated constructs, methods of preparing the polymer compositions and the laminate constructs, and devices related thereto are also disclosed. | 2011-03-17 |
20110062425 | ORGANIC EL ELEMENT - An organic EL element includes an anode and a cathode, and an organic compound layer between the anode and the cathode, the organic compound layer including a light-emitting sublayer, wherein the light-emitting sublayer contains a host, a metal complex acting as a first dopant, and a metal complex acting as a second dopant, the metal complex acting as the first dopant includes an unconjugated ligand and a conjugated ligand, and the first dopant has the lowest excited triplet level originating from the lowest excited triplet level of a unconjugated ligand. | 2011-03-17 |
20110062426 | SUBSTITUTED OLIGO- OR POLYTHIOPHENES - A process for the preparation of a substituted 2,2′-dithiophene is described, which process comprises the steps (a), (c) and optional steps (b) and (d): a reaction of a compound of the formula: with a suitable lithium organic compound, preferably Li-alkyl or Li-alkylamide; b) optional exchange of lithium against another metal selected from Mg1 Zn and Cu; c) reaction of the metallated intermediate obtained in step (a) or (b) with a suitable electrophil, which is CO | 2011-03-17 |
20110062427 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting display device (OLED) suppressing a resonance effect and having an enhanced luminance, and a method of fabricating the same, are disclosed. One embodiment of the OLED includes: a substrate; a first electrode disposed over the substrate and having a reflective layer; an organic layer disposed over the first electrode and having a white emission layer; a second electrode disposed over the organic layer; and a transmittance controlled layer (TCL) disposed over the second electrode and having an optical path length of about 260 to about 1520 Å. | 2011-03-17 |
20110062428 | Anthracene Derivative, and Light-Emitting Element, Light-Emitting Device, Electronic Device Using Anthracene Derivative - An object is to provide a novel anthracene derivative. Another object is to provide a light-emitting element with high luminous efficiency. Yet another object is to provide a light-emitting element with a long lifetime. Still another object is to provide a light-emitting device and an electronic device having a long lifetime by using the light-emitting elements of the present invention. The anthracene derivative represented by General Formula (1) is provided. The ability of the anthracene derivative represented by General Formula (1) to exhibit high luminous efficiency allows the production of a light-emitting element with high luminous efficiency and a long lifetime. | 2011-03-17 |
20110062429 | COMPOUND FOR ORGANIC ELECTROLUMINESCENT DEVICE AND ORGANIC ELECTROLUMINESCENT DEVICE - Disclosed is an organic electroluminescent device (organic EL device) that is improved in the luminous efficiency, fully secured of the driving stability, and of a simple structure and also disclosed is a compound for organic EL device useful for the said device. The compound for organic EL device is, for example, an indolocarbazole derivative represented by the following general formula (3). The organic EL device comprises a light-emitting layer disposed between an anode and a cathode piled one upon another on a substrate and the said light-emitting layer comprises a phosphorescent dopant and the aforementioned indolocarbazole derivative as a host material. In general formula (3), L is an aromatic heterocyclic group of a fused-ring structure with a valence of (n+1), Ar | 2011-03-17 |
20110062430 | BLUE LIGHT EMITTING NANOMATERIALS AND SYNTHESIS THEREOF - Methods for the production of a blue light emitting nanomaterial are provided comprising nitriding Group 13 metals to produce nitrided Group 13 metals and doping the nitrided Group 13 metals with a dopant, particularly an M | 2011-03-17 |
20110062431 | LASER ANNEALING OF METAL OXIDE SEMICONDUCTOR ON TEMPERATURE SENSITIVE SUBSTRATE FORMATIONS - A method of annealing a metal oxide on a temperature sensitive substrate formation includes the steps of providing a temperature sensitive substrate formation and forming a spacer layer on a surface of the substrate formation. A metal oxide semiconductor device is formed on the spacer layer, the device includes at least a layer of amorphous metal oxide semiconductor material, an interface of the amorphous metal oxide layer with a dielectric layer, and a gate metal layer adjacent the layer of amorphous metal oxide semiconductor material and the interface. The method then includes the step of at least partially annealing the layer of metal oxide semiconductor material by heating the adjacent gate metal layer with pulses of infra red radiation to improve the mobility and operating stability of the amorphous metal oxide semiconductor material while retaining at least the amorphous metal oxide semiconductor material adjacent the gate metal layer amorphous. | 2011-03-17 |
20110062432 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to realize low power consumption while manufacturing a semiconductor device including a thin film transistor whose parasitic capacitance is reduced. Part of an insulating layer covering the periphery of a gate electrode layer is formed to be thick. Specifically, a stack including a spacer insulating layer and a gate insulating layer is formed. The thick part of the insulating layer covering the periphery of the gate electrode layer reduces parasitic capacitance formed between the gate electrode layer of the thin film transistor and another electrode layer (another wiring layer) overlapping with the gate electrode layer. | 2011-03-17 |
20110062433 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - It is an object to provide a semiconductor device with less power consumption as a semiconductor device including a thin film transistor using an oxide semiconductor layer. It is an object to provide a semiconductor device with high reliability as a semiconductor device including a thin film transistor using an oxide semiconductor layer. In the semiconductor device, a gate electrode layer (a gate wiring layer) intersects with a wiring layer which is electrically connected to a source electrode layer or a drain electrode layer with an insulating layer which covers the oxide semiconductor layer of the thin film transistor and a gate insulating layer interposed therebetween. Accordingly, the parasitic capacitance formed by a stacked-layer structure of the gate electrode layer, the gate insulating layer, and the source or drain electrode layer can be reduced, so that low power consumption of the semiconductor device can be realized. | 2011-03-17 |
20110062434 | LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer. | 2011-03-17 |
20110062435 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object to provide a highly reliable thin film transistor with stable electric characteristics, which includes an oxide semiconductor film. The channel length of the thin film transistor including the oxide semiconductor film is in the range of 1.5 μm to 100 μm inclusive, preferably 3 μm to 10 μm inclusive; when the amount of change in threshold voltage is less than or equal to 3 V, preferably less than or equal to 1.5 V in an operation temperature range of room temperature to 180° C. inclusive or −25° C. to −150° C. inclusive, a semiconductor device with stable electric characteristics can be manufactured. In particular, in a display device which is an embodiment of the semiconductor device, display unevenness due to variation in threshold voltage can be reduced. | 2011-03-17 |
20110062436 | TRANSISTOR AND DISPLAY DEVICE - To provide a transistor having a favorable electric characteristics and high reliability and a display device including the transistor. The transistor is a bottom-gate transistor formed using an oxide semiconductor for a channel region. An oxide semiconductor layer subjected to dehydration or dehydrogenation through heat treatment is used as an active layer. The active layer includes a first region of a superficial portion microcrystallized and a second region of the rest portion. By using the oxide semiconductor layer having such a structure, a change to an n-type, which is attributed to entry of moisture to the superficial portion or elimination of oxygen from the superficial portion, and generation of a parasitic channel can be suppressed. In addition, contact resistance between the oxide semiconductor layer and source and drain electrodes can be reduced. | 2011-03-17 |
20110062437 | Method for growing non-polar m-plane epitaxial layer of wurtzite semiconductors on single crystal oxide substrates - The present invention relates to a method for growing a non-polar m-plane epitaxial layer on a single crystal oxide substrate, which comprises the following steps: providing a single crystal oxide with a perovskite structure; using a plane of the single crystal oxide as a substrate; and forming an m-plane epitaxial layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process. The present invention also provides an epitaxial layer having an m-plane obtained according to the aforementioned method. | 2011-03-17 |
20110062438 | Field-Effect Semiconductor Device - A HEMT-type field-effect semiconductor device has a main semiconductor region comprising two layers of dissimilar materials such that a two-dimensional electron gas layer is generated along the heterojunction between the two layers. A source and a drain electrode are placed in spaced positions on a major surface of the main semiconductor region. Between these electrodes, a gate electrode is received in a recess in the major surface of the main semiconductor region via a p-type metal oxide semiconductor film whereby a depletion zone is normally created in the electron gas layer, with a minimum of turn-on resistance and gate leak current. | 2011-03-17 |
20110062439 | SEMICONDUCTOR DEVICE - In the present invention, a thin film transistor is formed on a plastic film substrate ( | 2011-03-17 |
20110062440 | Zinc-Oxide Based Epitaxial Layers and Devices - Methods of forming planar zinc-oxide based epitaxial layers, associated heterostructures, and devices are provided. | 2011-03-17 |
20110062441 | SEMICONDUCTOR DEVICE AND DISPLAY APPARATUS - Provided is a semiconductor device including a semiconductor element including at least a semiconductor as a component characterized by including: a mechanism for irradiating the semiconductor with light having a wavelength longer than an absorption edge wavelength of the semiconductor; and a dimming mechanism, provided in a part of an optical path through which the light passes, for adjusting at least one factor selected from an intensity, irradiation time and the wavelength of the light, wherein a threshold voltage of the semiconductor element is varied by the light adjusted by the dimming mechanism. | 2011-03-17 |
20110062442 | Semiconductor Device Test Structures and Methods - Semiconductor device test structures and methods are disclosed. In a preferred embodiment, a test structure includes a feed line disposed in a first conductive material layer, and a stress line disposed in the first conductive material layer proximate the feed line yet spaced apart from the feed line. The stress line is coupled to the feed line by a conductive feature disposed in at least one second conductive material layer proximate the first conductive material layer. | 2011-03-17 |
20110062443 | THIN BODY SEMICONDUCTOR DEVICES HAVING IMPROVED CONTACT RESISTANCE AND METHODS FOR THE FABRICATION THEREOF - Embodiments of a method for fabricating a semiconductor device are provided. In one embodiment, the method includes the step of producing a partially-completed semiconductor device including a substrate, source/drain (S/D) regions, a channel region between the S/D regions, a gate stack over the channel region, and sidewall spacers laterally adjacent the gate stack. The method further includes the steps of amorphizing the S/D regions, depositing a silicide-forming material over the amorphized S/D regions, and heating the partially-completed semiconductor device to a predetermined temperature at which the silicide-forming material reacts with the amorphized S/D regions. | 2011-03-17 |
20110062444 | FLEXIBLE SUBSTRATE AND METHOD FOR FABRICATING FLEXIBLE DISPLAY DEVICVE HAVING THE SAME - A method for fabricating a flexible display device including the steps of preparing a glass substrate, forming a flexible substrate on the glass substrate, the flexible substrate being formed by forming a semiconductor layer on the glass substrate, forming a first flexible layer on the semiconductor layer, forming an adhesive layer on the first flexible layer, and forming a second flexible layer on the adhesive layer, forming a thin film array on the flexible substrate, forming a display device on the thin film array, and separating the glass substrate from the semiconductor layer of the flexible substrate. | 2011-03-17 |
20110062445 | DISPLAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - A method of forming a display substrate includes forming an array layer on a substrate, forming a passivation layer on the array layer, forming a photoresist pattern on the passivation layer corresponding to a gate line, a source line and a thin-film transistor of the array layer, etching the passivation layer using the photoresist pattern as a mask, Non-uniformly surface treating a surface of the photoresist pattern, forming a transparent electrode layer on the substrate having the surface-treated photoresist pattern formed thereon and forming a pixel electrode. The forming a pixel electrode includes removing the photoresist pattern and the transparent electrode layer, such as by infiltrating a strip solution into the surface-treated photoresist pattern. | 2011-03-17 |
20110062446 | <100> or 45 degrees-rotated <100>, semiconductor-based, large-area, flexible, electronic devices - Novel articles and methods to fabricate the same resulting in flexible, {100}<100> or 45°-rotated {100}<100> oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices. | 2011-03-17 |
20110062447 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING LIQUID CRYSTAL DISPLAY DEVICE - A reflection-type or transflective-type liquid crystal display device having excellent efficiency of light utility is provided at low cost. | 2011-03-17 |
20110062448 | Field effect semiconductor devices and methods of manufacturing field effect semiconductor devices - Field effect semiconductor devices and methods of manufacturing the same are provided, the field effect semiconductor devices include a second semiconductor layer on a first surface of a first semiconductor layer, a first and a second third semiconductor layer respectively on two sides of the second semiconductor layer, a source and a drain respectively on the first and second third semiconductor layer, and a gate electrode on a second surface of the first semiconductor layer. | 2011-03-17 |
20110062449 | TECHNIQUE FOR THE GROWTH AND FABRICATION OF SEMIPOLAR (GA,AL,IN,B)N THIN FILMS, HETEROSTRUCTURES, AND DEVICES - A method for growth and fabrication of semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices, comprising identifying desired material properties for a particular device application, selecting a semipolar growth orientation based on the desired material properties, selecting a suitable substrate for growth of the selected semipolar growth orientation, growing a planar semipolar (Ga, Al, In, B)N template or nucleation layer on the substrate, and growing the semipolar (Ga, Al, In, B)N thin films, heterostructures or devices on the planar semipolar (Ga, Al, In, B)N template or nucleation layer. The method results in a large area of the semipolar (Ga, Al, In, B)N thin films, heterostructures, and devices being parallel to the substrate surface. | 2011-03-17 |
20110062450 | Silicon carbide semiconductor device - A silicon carbide semiconductor device comprising a region of germanium and a region of crystalline or polycrystalline silicon carbide. The germanium region and the silicon carbide region are configured to form a germanium/silicon carbide heterojunction. | 2011-03-17 |
20110062451 | LIGHT-EMITTING ELEMENT - According to an aspect of the invention, a light-emitting element includes a shift thyristor, a light emitting thyristor, and a vertical type gate load resistor. The shift thyristor includes a first anode layer, a first gate layer, and a first cathode layer. The light-emitting thyristor includes a second anode layer, a second gate layer, and a second cathode layer. The vertical type gate load resistor is arranged on the first gate layer under a power line and limits a current flowing from the first gate layer and the second gate layer to the power line. | 2011-03-17 |
20110062452 | METHOD FOR PRODUCING ZINC OXIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND ZINC OXIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE - The ohmic contact between a growth substrate and an electrode formed thereon is improved in a zinc oxide-based semiconductor light-emitting device, thereby improving the light-emission efficiency and reliability A step for forming an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer in sequence on a first principal face of a substrate having a composition of Mg | 2011-03-17 |
20110062453 | COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT, ILLUMINATING APPARATUS USING COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT - A compound semiconductor light emitting element is provided with a substrate which is provided on a side of one electrode; a plurality of columnar crystal structures of nanometer scale extending in a vertical direction on the substrate; and another electrode which interconnects top portions of the plurality of columnar crystal structures. On the substrate are provided a first region, and a second region having a step between the first region and the second region and having a substrate thickness greater than that in the first region; a porous first mask layer is formed on the surface of the first region on the substrate; and the plurality of columnar crystal structures are formed by sequentially layering an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer, in the first and second regions on the substrate. | 2011-03-17 |
20110062454 | LIGHT EMITTING DEVICE HAVING REMOTELY LOCATED LIGHT SCATTERING MATERIAL - A light emitting device with a remotely located light scattering material which improves color mixing property is provided. The light emitting device includes a substrate defining a cavity; one or more light emitting elements bonded to the substrate and positioned in the cavity; at least one first layer covering the one or more light emitting elements, at least part of the at least one first layer within the cavity, wherein the at least one first layer has a refractive index less than the refractive index of the one or more light emitting elements; and at least one second layer including light scattering material disposed on the at least one first layer, wherein the refractive index of the first layer is less than or equal to the refractive index of the second layer. | 2011-03-17 |
20110062455 | OPTOELECTRONIC COMPONENT - Provided are optoelectronic components which include an optoelectronic device and a structure for self-aligning the optoelectronic device. Also provided are optoelectronic modules and methods of forming optoelectronic components. | 2011-03-17 |
20110062456 | LIGHT-EMITTING DEVICE - This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; and a first light-emitting unit comprising a plurality of light-emitting diodes electrically connected to each other on the substrate. A first light-emitting diode in the first light-emitting unit comprises a first semiconductor layer with a first conductivity-type, a second semiconductor layer with a second conductivity-type, and a light-emitting stack formed between the first and second semiconductor layers. The first light-emitting diode in the first light-emitting unit further comprises a first connecting layer on the first semiconductor layer for electrically connecting to a second light-emitting diode in the first light-emitting unit; a second connecting layer, separated from the first connecting layer, formed on the first semiconductor layer; and a third connecting layer on the second semiconductor layer for electrically connecting to a third light-emitting diode in the first light-emitting unit. | 2011-03-17 |
20110062457 | SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, IMAGE DISPLAY DEVICE, AND ELECTRONIC APPARATUS - A semiconductor light emitting device including an active layer, a compound semiconductor layer on the active layer, a contact layer on the compound semiconductor layer, and an electrode on the contact layer, where the contact layer is substantially the same size as the electrode. | 2011-03-17 |
20110062458 | LIGHT EMITTING PANEL AND MANUFACTURING METHOD OF LIGHT EMITTING PANEL - Disclosed is a light emitting panel including: a light blocking section formed above a substrate, the light blocking section including an opening; a first electrode formed above the opening of the light blocking section; a dividing wall including an opening so that at least a portion of the first electrode is exposed, the opening corresponding to a shape of the opening of the light blocking section; a second electrode formed above the first electrode; and a carrier transport layer composed of at least one layer formed between the first electrode and the second electrode. | 2011-03-17 |
20110062459 | AC LIGHT EMITTING DIODE HAVING FULL-WAVE LIGHT EMITTING CELL AND HALF-WAVE LIGHT EMITTING CELL - The present invention discloses an alternating current (AC) light emitting diode (LED) having half-wave light emitting cells and full-wave light emitting cells. The AC LED has a plurality of light emitting cells electrically connected between bonding pads on a single substrate. The AC LED includes a first row of half-wave light emitting cells each having an anode terminal and a cathode terminal, a second row of full-wave light emitting cells each having an anode terminal and a cathode terminal, and a third row of half-wave light emitting cells each having an anode terminal and a cathode terminal. In the AC LED, the second row is arranged between the first row and the third row, and the third row includes a pair of light emitting cells that share a cathode terminal with each other. The cathode terminal shared by the pair of light emitting cells in the third row is electrically connected to the anode terminal of a corresponding light emitting cell of the half-wave light emitting cells in the first row through a conductor that is electrically insulated from the full-wave light emitting cells in the second row. | 2011-03-17 |
20110062460 | ORGANIC EL LIGHT EMITTING ELEMENT, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE - An organic EL light emitting element is provided with a conductive transparent electrode | 2011-03-17 |
20110062461 | ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE - An organic EL display device of active matrix type wherein insulated-gate field effect transistors formed on a single-crystal semiconductor substrate are overlaid with an organic EL layer; characterized in that the single-crystal semiconductor substrate ( | 2011-03-17 |
20110062462 | Novel Device Structure - Organic light emitting devices are provided having multiple subpixels. An organic spacer layer is provided in at least one subpixel to protect the emissive layer of the at least one subpixel from overspray due to the deposition of a different emissive layer in a nearby subpixel. More generally, a first device is provided, where the first device comprises a multicolor organic light emitting device. The first device may be the multicolor organic device itself. Or, the first device may be a larger device, such as a consumer device, that includes one or many of the multicolor organic devices. The multicolor organic light emitting, device further comprises multiple subpixels. In the most general case, there are at least a first subpixel and a second subpixel. | 2011-03-17 |
20110062463 | OPTICAL FUNCTIONAL ELEMENT, OPTICAL FUNCTIONAL ELEMENT ARRAY, EXPOSURE DEVICE, AND METHOD OF MANUFACTURING OPTICAL FUNCTIONAL ELEMENT - According to an aspect of the invention, an optical functional element includes a substrate, a semiconductor element portion, and a light emitting element portion. The semiconductor element portion includes a first part of a semiconductor multi layer structure formed on the substrate. The light emitting element portion includes a second part of the semiconductor multi layer structure and light emitting element structure formed on the second part of the semiconductor multi layer structure. | 2011-03-17 |
20110062464 | LED ARRANGEMENT - An LED arrangement (light emitting diode) has a plurality of adjacent radiating LEDs that are nearly identically aligned for forming an extended area light source. The LEDs are attached to a metallic multi-film support having sandwich-like insulating intermediate layers and having at least a step-like structure with at least one step. At least one LED chip is placed on each step on a metal film and the metal layer directly above is formed of a corresponding shortening or recess for mounting an LED. | 2011-03-17 |
20110062465 | LIGHT EMITTING ELEMENT WITH A PLURALITY OF CELLS BONDED, METHOD OF MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE USING THE SAME - The present invention relates to a light emitting element with arrayed cells, a method of manufacturing the same, and a light emitting device using the same. The present invention provides a light emitting element including a light emitting cell block with a plurality of light emitting cells connected in series or parallel on a single substrate, and a method of manufacturing the same, wherein each of the plurality of light emitting cells includes an N-type semiconductor layer and a P-type semiconductor layer, and the N-type semiconductor layer of one light emitting cell is electrically connected to the P-type semiconductor layer of another adjacent light emitting cell. Further, the present invention provides a light emitting device including a light emitting element with a plurality of light emitting cells connected in series. Accordingly, it is possible to simplify a manufacturing process of a light emitting device for illumination capable of being used with a household AC power source, to decrease a fraction defective occurring in manufacturing a light emitting device for illumination, and to mass-produce the light emitting device for illumination. Further, there is an advantage in that DC driving efficiency can be enhanced in an AC operation by installing a predetermined rectifying circuit outside the light emitting element. | 2011-03-17 |
20110062466 | AlxGa(1-x)As Substrate, Epitaxial Wafer for Infrared LEDs, Infrared LED, Method of Manufacturing AlxGa(1-x)As Substrate, Method of Manufacturing Epitaxial Wafer for Infrared LEDs, and Method of Manufacturing Infrared LEDs | 2011-03-17 |
20110062467 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light emitting device according to the embodiment includes a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer, a current spreading layer on the second conductive semiconductor layer, a bonding layer on the current spreading layer, and a light extracting structure on the bonding layer. | 2011-03-17 |
20110062468 | PHOSPHOR-CONVERTED LIGHT EMITTING DIODE DEVICE - A light emitting diode is provided which is capable of emitting a first light having a first peak wavelength. The light emitting diode is provided with a phosphor layer overlying the light emitting diode and capable of absorbing the first light and emitting a second light having a second peak wavelength. The phosphor layer includes a pattern of holes positioned to allow the first peak wavelength to exit through the holes without being absorbed by the phosphor layer, and wherein the holes are placed to facilitate more of the first peak wavelength to exit the phosphor in the area of the holes than the second peak wavelength. | 2011-03-17 |
20110062469 | MOLDED LENS INCORPORATING A WINDOW ELEMENT - A light emitter includes a light-emitting device (LED) die and an optical element over the LED die. The optical element includes a lens, a window element, and a bond at an interface disposed between the lens and the window element. The window element may be a wavelength converting element or an optically flat plate. The window element may be directly bonded or fused to the lens, or the window element may be bonded by one or more intermediate bonding layers to the lens. The bond between the window element and the lens may have a refractive index similar to that of the window element, the lens, or both. | 2011-03-17 |
20110062470 | REDUCED ANGULAR EMISSION CONE ILLUMINATION LEDS - A light emitting diode (LED) package includes a support, an LED die mounted on the support, a reflector around the LED die, and a lens over the LED die. The reflector has an angled reflective surface that limits the light emission angle from the LED package. The reflector is a part of the lens or the support. | 2011-03-17 |
20110062471 | LED MODULE WITH HIGH INDEX LENS - An array of housings with housing bodies and lenses is molded, or an array of housing bodies is molded and bonded with lenses to form an array of housings with housing bodies and lenses. Light-emitting diodes (LEDs) are attached to the housings in the array. An array of metal pads may be bonded to the back of the array or insert molded with the housing array to form bond pads on the back of the housings. The array is singulated to form individual LED modules. | 2011-03-17 |
20110062472 | WAVELENGTH-CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE - A light emitting diode includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, and n- and p-contacts disposed on the n- and p-type regions. The light emitting layer is configured to emit light of a first peak wavelength. A wavelength converting material is positioned in a path of light emitted by the light emitting layer. The wavelength converting material is configured to absorb light of the first peak wavelength and emit light of a second peak wavelength. The light emitting diode is configured such that a light emission pattern from the light emitting diode complements a light emission pattern from the wavelength converting material. | 2011-03-17 |