09th week of 2014 patent applcation highlights part 42 |
Patent application number | Title | Published |
20140057410 | METHOD OF FABRICATING A PACKAGING SUBSTRATE - A method of fabricating a packaging substrate is provided, including: providing a carrier having two carrying portions, each of the carrying portions having a first side and a second side opposite to the first side and the carrying portions are bonded through the second sides thereof; forming a circuit layer on the first side of each of the carrying portions; and separating the two carrying portions from each other to form two packaging substrates. The carrying portions facilitate the thinning of the circuit layers and provide sufficient strength for the packaging substrates to undergo subsequent packaging processes. The carrying portions can be removed after the packaging processes to reduce the thickness of packages and thereby meet the miniaturization requirement. | 2014-02-27 |
20140057411 | DICING BEFORE GRINDING AFTER COATING - This invention is a method for singulating a semiconductor wafer into individual semiconductor dies, the top surface of the semiconductor wafer bumped with metallic pre-connections and having a coating of underfill disposed over and around the metallic pre-connection bumps. The method comprises (A) providing a semiconductor wafer having a top surface with an array of metallic pre-connection bumps and a coating of underfill disposed over and around the metallic pre-connection bumps; (B) dicing through the underfill between the metallic pre-connection bumps and into the top surface of the semiconductor wafer to the ultimate desired wafer thickness, creating dicing lines; and (C) removing wafer material from the backside of the wafer at least to the depth of the dicing lines, thus singulating the resulting dies from the wafer. | 2014-02-27 |
20140057412 | METHOD FOR FUSING A LASER FUSE AND METHOD FOR PROCESSING A WAFER - A method for fusing a laser fuse in accordance with various embodiments may include: providing a semiconductor workpiece having a substrate region and at least one laser fuse; fusing the at least one laser fuse from a back side of the substrate region by means of an infrared laser beam. | 2014-02-27 |
20140057413 | Methods for fabricating devices on semiconductor substrates - The present invention relates to insertion of a substrate separation step in fabrication of electronics, optoelectronics and microelectromechanical devices (MEMS), particularly double-sided devices which functionalities require designs and fabrication processes at both sides of substrates. In the method, both sides of a semiconductor substrate are processed, prior to slicing of the substrate from the sidewall into two pieces, and the device fabrication continues on the new surfaces of the two resulting substrates after the slicing. | 2014-02-27 |
20140057414 | MASK RESIDUE REMOVAL FOR SUBSTRATE DICING BY LASER AND PLASMA ETCH - Methods of dicing substrates having a plurality of ICs. A method includes forming a mask and patterning the mask with a femtosecond laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. The substrate is etched through the gaps in the patterned mask to singulate the IC. The mask is removed and metallized bumps on the diced substrate are contacted with an inorganic acid solution to remove mask residues. | 2014-02-27 |
20140057415 | METHODS OF FORMING A LAYER OF SILICON ON A LAYER OF SILICON/GERMANIUM - Disclosed herein are various methods of forming a layer of silicon on a layer of silicon/germanium. In one example, a method disclosed herein includes forming a silicon/germanium material on a semiconducting substrate, after forming the silicon/germanium material, performing a heating process to raise a temperature of the substrate to a desired silicon formation temperature while flowing a silicon-containing precursor and a chlorine-containing precursor into the deposition chamber during the heating process, and, after the temperature of the substrate reaches the desired silicon formation temperature, forming a layer of silicon on the silicon/germanium material. | 2014-02-27 |
20140057416 | SEMICONDUCTIVE MICRO- AND NANO-WIRE ARRAY MANUFACTURING - The disclosure provides methods of manufacturing semiconductive structures using stamping and VLS techniques. | 2014-02-27 |
20140057417 | Method for Producing an Optoelectronic Semiconductor Chip - A method for producing an optoelectronic semiconductor chip is disclosed. A growth substrate is provided in an epitaxy installation. At least one intermediate layer is deposited by epitaxy on the growth substrate. A structured surface that faces away from the growth substrate is produced on the side of the intermediate layer facing away from the growth substrate. An active layer is deposited by epitaxy on the structured surface. The structured surface is produced in the epitaxy installation and the active layer follows the structuring of the structured surface at least in some regions in a conformal manner or at least in some sections essentially in a conformal manner. | 2014-02-27 |
20140057418 | METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - The present invention discloses a method for manufacturing a high mobility material layer, comprising: forming a plurality of precursors in/on a substrate; and performing a pulse laser processing such that the plurality of precursors react with each other to produce a high mobility material layer. Furthermore, the present invention also provides a method for manufacturing a semiconductor device, comprising: forming a buffer layer on an insulating substrate; forming a first high mobility material layer on the buffer layer using the method for manufacturing the high mobility material layer; forming a second high mobility material layer on the first high mobility material layer using the method for manufacturing the high mobility material layer; and forming trench isolations and defining active regions in the first and second high mobility material layers. | 2014-02-27 |
20140057419 | METHOD FOR FORMING LOW TEMPERATURE POLYSILICON THIN FILM - Embodiments of the present invention provide a method for forming a low temperature polysilicon thin film. The method for forming the low temperature polysilicon thin film can comprise: depositing a buffer layer and an amorphous silicon layer on a substrate in this order; heating the amorphous silicon layer; performing an excimer laser annealing process on the amorphous silicon layer to form a polysilicon layer; oxidizing partially the polysilicon layer so as to form an oxidation portion at an upper portion of the polysilicon layer; and removing the oxidation portion of the polysilicon layer to form a polysilicon thin film. | 2014-02-27 |
20140057420 | PROCESS FOR PRODUCING A POLYCRYSTALLINE LAYER - A process is provided for producing a polycrystalline layer. This process includes the steps of: applying to a substrate a layer sequence comprising at least one amorphous starting layer provided with impurities, a metallic activator layer, and a cleaning layer based on titanium or titanium oxide arranged between the starting layer and the activator layer for withdrawing the impurities from the starting layer; and carrying out a heat treatment after the layer sequence has been applied for forming a polycrystalline end layer. | 2014-02-27 |
20140057421 | SEMICONDUCTOR DEVICE PRODUCTION METHOD - A semiconductor device production method includes: forming a protection film on a semiconductor substrate; forming a first resist pattern on the protection film; implanting a first impurity ion into the semiconductor substrate using the first resist pattern as a mask; removing the first resist pattern; forming on the surface of the semiconductor substrate a chemical reaction layer that takes in surface atoms from the semiconductor substrate through chemical reaction, after the removing of the first resist pattern; removing the chemical reaction layer formed on the semiconductor substrate and removing the surface of the semiconductor substrate, after the forming of the chemical reaction layer; and growing a semiconductor layer epitaxially on the surface of the semiconductor substrate, after the removing of the surface of the semiconductor substrate. | 2014-02-27 |
20140057422 | Method Of Forming A Memory Cell By Reducing Diffusion Of Dopants Under A Gate - A method of forming a memory cell includes forming a conductive floating gate over the substrate, forming a conductive control gate over the floating gate, forming a conductive erase gate laterally to one side of the floating gate and forming a conductive select gate laterally to an opposite side of the one side of the floating gate. After the forming of the floating and select gates, the method includes implanting a dopant into a portion of a channel region underneath the select gate using an implant process that injects the dopant at an angle with respect to a surface of the substrate that is less than ninety degrees and greater than zero degrees. | 2014-02-27 |
20140057423 | METHOD FOR TRANSFERRING INP FILM - A method for transferring InP film onto a stiffener substrate, the method including: providing a structure comprising an InP surface layer and an underlying doped thin InP layer; implanting hydrogen ions through the surface layer so as to create a weakened plane in the doped thin layer, delimiting a film comprising the surface layer; placing the surface layer in close contact with a stiffener substrate; and applying heat treatment to obtain splitting at the weakened plane and transfer of the film onto the stiffener substrate. | 2014-02-27 |
20140057424 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - A silicon carbide substrate is prepared which has a main surface covered with a silicon dioxide layer. In the silicon dioxide layer, an opening is formed by etching. In the opening, a residue resulting from the etching is on the silicon carbide substrate. The residue is removed by plasma etching in which only an inert gas is introduced. After removing the residue, under heating, a reactive gas is supplied to the silicon carbide substrate covered with the silicon dioxide layer having the opening formed therein. In this way, a trench is formed in the main surface of the silicon carbide substrate. | 2014-02-27 |
20140057425 | GATE TUNABLE TUNNEL DIODE - A gate tunable diode is provided. The gate tunable diode includes a gate dielectric formed on a gate electrode and a graphene electrode formed on the gate dielectric. Also, the gate tunable diode includes a tunnel dielectric formed on the graphene electrode and a tunnel electrode formed on the tunnel dielectric. | 2014-02-27 |
20140057426 | NON-VOLATILE MEMORY STRUCTURE EMPLOYING HIGH-K GATE DIELECTRIC AND METAL GATE - A high dielectric constant (high-k) gate dielectric for a field effect transistor (FET) and a high-k tunnel dielectric for a non-volatile random access memory (NVRAM) device are simultaneously formed on a semiconductor substrate. A stack of at least one conductive material layer, a control gate dielectric layer, and a disposable material layer is subsequently deposited and lithographically patterned. A planarization dielectric layer is deposited and patterned, and disposable material portions are removed. A remaining portion of the control gate dielectric layer is preserved in the NVRAM device region, but is removed in the FET region. A conductive material is deposited in gate cavities to provide a control gate for the NVRAM device and a gate portion for the FET. Alternately, the control gate dielectric layer may replaced with a high-k control gate dielectric in the NVRAM device region. | 2014-02-27 |
20140057427 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Example embodiments relate to a method for manufacturing a semiconductor device, wherein a metal gate electrode therein may be formed without a void in a lower portion of the metal gate electrode. The method may include providing a substrate, forming a dummy gate electrode on the substrate, forming a gate spacer on the substrate to be contiguous to the dummy gate electrode, forming a first recess by simultaneously removing a portion of the dummy gate electrode and a portion of the gate spacer, the first recess having an upper end wider than a lower end, forming a second recess by removing the dummy gate electrode remaining after forming the first recess, and forming a metal gate electrode by depositing a metal to fill the first and second recesses. | 2014-02-27 |
20140057428 | BUFFER LAYER FOR SINTERING - A layer of material having a low thermal conductivity is coated over a substrate. A film of conductive ink is then coated over the layer of material having the low thermal conductivity, and then sintered. The film of conductive ink does not absorb as much energy from the sintering as the film of conductive ink coated over the layer of material having the low thermal conductivity. The layer of material having the low thermal conductivity maybe a polymer, such as polyimide. | 2014-02-27 |
20140057429 | Method of Forming a Step Pattern Structure - A method of forming a multi-floor step pattern structure includes forming a stacked structure having alternating insulating interlayers and sacrificial layers on a substrate. A first photoresist pattern is formed on the stacked structure. A first preliminary step pattern structure is formed by etching portions of the stacked structure using the first photoresist pattern as an etching mask. A passivation layer pattern is formed on upper surfaces of the first photoresist pattern and the first preliminary step pattern structure. A second photoresist pattern is formed by removing a side wall portion of the first photoresist pattern exposed by the passivation layer pattern. A second preliminary step pattern structure is formed by etching exposed insulating interlayers and underlying sacrificial layers using the second photoresist pattern as an etching mask. The above steps may be repeated on the second preliminary step pattern structure to form the multi-floor step pattern structure. | 2014-02-27 |
20140057430 | SEMICONDUCTOR DEVICE, FABRICATING METHOD THEREOF AND SEMICONDUCTOR PACKAGE INCLUDING THE SEMICONDUCTOR DEVICE - In one embodiment, a semiconductor device includes a semiconductor substrate having a first surface, and a second surface opposite to the first surface. The second surface defines a redistribution trench. The substrate has a via hole extending therethrough. The semiconductor device also includes a through via disposed in the via hole. The through via may include a via hole insulating layer, a barrier layer, sequentially formed on an inner wall of the via hole. The through via may further include a conductive connector adjacent the barrier layer. The semiconductor device additionally includes an insulation layer pattern formed on the second surface of the substrate. The insulation layer pattern defines an opening that exposes a region of a top surface of the through via. The semiconductor devices includes a redistribution layer disposed in the trench and electrically connected to the through via. The insulation layer pattern overlaps a region of the conductive connector. | 2014-02-27 |
20140057431 | Methods and Apparatus of Packaging Semiconductor Devices - Methods and apparatuses for wafer level packaging (WLP) semiconductor devices are disclosed. A redistribution layer (RDL) is formed on a first passivation layer in contact with a conductive pad over a surface of a die. The RDL layer is on top of a first region of the first passivation layer. A second passivation layer is formed on the RDL layer with an opening to expose the RDL layer, and over the first passivation layer. An under bump metallization (UBM) layer is formed over the second passivation layer in contact with the exposed RDL layer. A second region of the first passivation layer disjoint from the first region is determined by projecting an outer periphery of a solder ball or other connector onto the surface. | 2014-02-27 |
20140057432 | SEMICONDUCTOR DEVICE INCLUDING COPPER WIRING AND VIA WIRING HAVING LENGTH LONGER THAN WIDTH THEREOF AND METHOD OF MANUFACTURING THE SAME - A method for manufacturing a semiconductor device includes forming a first interconnect over the semiconductor substrate; forming an interlayer dielectric film over the first interconnect; forming a hole in the interlayer dielectric film such that the hole reaches the first interconnect; forming a trench in the interlayer dielectric film; and embedded a conductive film in the hole and the trench, thereby a via is formed in the hole and a second interconnect in the trench, wherein, in a planar view, the first interconnect extends in a first direction, wherein, in a planar view, the second interconnect extends in a second direction which is perpendicular to the first direction, and wherein a maximum width of the via in the second direction is larger than a maximum width of the via in the first direction. | 2014-02-27 |
20140057433 | PIXEL CAPACITORS - A technique comprising: forming laterally-extending switching circuitry of a device for controlling an overlying laterally-extending array of pixel conductors of said device; forming an electrically conductive laterally-extending patterned screen over said switching circuitry via a first insulating region, said patterned screen defining holes for receiving conductive interlayer connects between said switching circuitry and said array of pixel conductors; and thereafter: forming a second insulating region over said patterned screen, forming said array of pixel conductors over said patterned screen via said second insulating region for capacitative coupling with said patterned screen, forming through holes through at least said first and second insulating regions at the locations of said holes defined in said patterned screen, and forming said interlayer connects in said through holes; and wherein said patterned screen is configured such that the area of overlap between the array of pixel conductors and underlying conductive elements is substantially constant within a range of lateral positions of the pixel conductors relative to the switching circuitry, which range is greater in a first direction than 40% of the pitch of the pixel conductors in said first direction. | 2014-02-27 |
20140057434 | THROUGH SILICON VIA PROCESS - A through silicon via process includes the following steps. A substrate having a front side and a back side is provided. A passivation layer is formed on the back side of the substrate. An oxide layer is formed on the passivation layer. | 2014-02-27 |
20140057435 | METHODS OF FORMING A METAL CAP LAYER ON COPPER-BASED CONDUCTIVE STRUCTURES ON AN INTEGRATED CIRCUIT DEVICE - Disclosed herein are various methods of forming a metal cap layer on copper-based conductive structures on integrated circuit devices, and integrated circuit devices having such a structure. In one example, the method includes the steps of forming a conductive feature comprised of copper in a layer of insulating material, performing a metal removal process to remove a portion of the conductive feature and thereby define a recess above a residual portion of the copper feature, and performing a selective deposition process to form a cap layer comprised of cobalt, manganese, CoWP or NiWP within the recess. | 2014-02-27 |
20140057436 | THREE PHOTOMASK SIDEWALL IMAGE TRANSFER METHOD - A three photomask image transfer method. The method includes using a first photomask, defining a set of mandrels on a hardmask layer on a substrate; forming sidewall spacers on sidewalls of the mandrels, the sidewall spacers spaced apart; removing the set of mandrels; using a second photomask, removing regions of the sidewall spacers forming trimmed sidewall spacers and defining a pattern of first features; forming a pattern transfer layer on the trimmed sidewall spacers and the hardmask layer not covered by the trimmed sidewall spacers; using a third photomask, defining a pattern of second features in the transfer layer, at least one of the second features abutting at least one feature of the pattern of first features; and simultaneously transferring the pattern of first features and the pattern of second features into the hardmask layer thereby forming a patterned hardmask layer. | 2014-02-27 |
20140057437 | RINSING AGENT FOR LITHOGRAPHY, METHOD FOR FORMING A RESIST PATTERN, AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE - To provide a rinsing agent for lithography, which contains C6-C8 straight-chain alkanediol, and water. | 2014-02-27 |
20140057438 | POLISHING METHOD OF NON-OXIDE SINGLE-CRYSTAL SUBSTRATE - There is provided a polishing method for polishing a non-oxide single-crystal substrate such as a silicon carbide single-crystal substrate at a high polishing rate to obtain a high-quality surface that is smooth and excellent in surface properties. This polishing method is a method of supplying a polishing liquid to a polishing pad not including abrasive grains to bring a surface to be polished of the non-oxide single-crystal substrate and the polishing pad into contact with each other and polishing the surface to be polished by a relative movement between them, the method characterized in that the polishing liquid comprises: an oxidant whose redox potential is 0.5 V or more and which contains a transition metal; and water, and does not contain abrasive grains. | 2014-02-27 |
20140057439 | Method of Forming Interlayer Dielectrics - A method of forming interlayer dielectric comprising the steps of forming a first undoped layer, forming in-situ and sequentially a doped layer and a second undoped layer on the first undoped layer, and planarizing the second undoped layer. | 2014-02-27 |
20140057440 | METHODS OF FORMING A SEMICONDUCTOR DEVICE - A method of forming a semiconductor device includes first preliminary holes over an etch target, the first preliminary holes arranged as a plurality of rows in a first direction, forming dielectric patterns each filling one of the first preliminary holes, sequentially forming a barrier layer and a sacrificial layer on the dielectric patterns, forming etch control patterns between the dielectric patterns, forming second preliminary holes by etching the sacrificial layer, each of the second preliminary holes being in a region defined by at least three dielectric patterns adjacent to each other, and etching the etch target layer corresponding to positions of the first and second preliminary holes to form contact holes. | 2014-02-27 |
20140057441 | METHOD FOR FORMING PATTERN AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for forming a pattern according to an embodiment, includes forming above a first film film patterns of a second film; forming film patterns of the first film by etching the first film using the film patterns of the second film as a mask; converting the film patterns of the second film into film patterns whose width are narrower than the film patterns of the first film by performing a slimming process; forming film patterns of a third film on both sidewalls of the film patterns of the first film and the film patterns of the second film after the slimming process; and etching the first film using the film patterns of the third film as a mask after the film patterns of the second film being removed. | 2014-02-27 |
20140057442 | SEMICONDUCTOR DEVICE WITH SILICON-CONTAINING HARD MASK AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a semiconductor substrate having an etch target layer provided on the surface thereof, and a hard mask layer formed over the etch target layer and including silicon, wherein the hard mask layer includes a dual structure including a first area and a second area having a larger etch rate than the first area, in order to increase an etching selectivity of the hard mask layer. | 2014-02-27 |
20140057443 | PATTERN FORMING METHOD - According to one embodiment, a pattern forming method includes forming a physical guide including a first predetermined pattern in a first region on a to-be-processed film, and a second predetermined pattern in a second region on the to-be-processed film, forming a block copolymer in the physical guide, forming a self-assembled phase including a first polymer portion and a second polymer portion by causing microphase separation of the block copolymer, removing the second polymer portion, and processing the to-be-processed film, with the physical guide and the first polymer portion serving as a mask. A pattern height of the first predetermined pattern is greater than a pattern height of the second predetermined pattern. | 2014-02-27 |
20140057444 | METHOD FOR MANUFACTURING MEMS DEVICE, METHOD FOR MANUFACTURING THERMAL DETECTOR, THERMAL DETECTOR, THERMAL DETECTION DEVICE, AND ELECTRONIC INSTRUMENT - A method for manufacturing a MEMS device having an undercut shape formed on a fixed part includes a first step of forming an etching layer having a first cavity on the fixed part; a second step of forming a mask layer on a side wall of the etching layer, the side wall facing the first cavity; and a third step of directing an etchant fed into the first cavity on a surface side of the mask layer to a back surface side of the mask layer, isotropically etching the etching layer, forming a second cavity communicated with the first cavity on the back surface side of the mask layer, and processing the etching layer into an undercut shape. | 2014-02-27 |
20140057445 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - The present invention provides a plasma processing apparatus having a radio frequency power supply supplying time-modulated radio frequency power which is controllable widely with high precision, and a plasma processing method using the plasma processing apparatus. The plasma processing apparatus includes: a vacuum chamber; a first radio frequency power supply for generating plasma in the vacuum chamber; a sample holder disposed in the vacuum chamber, on which a sample is placed; and a second radio frequency power supply supplying radio frequency power to the sample holder, wherein at least one of the first radio frequency power supply and the second radio frequency power supply supplies time-modulated radio frequency power, one of parameters of controlling the time-modulation has two or more different control ranges, and one of the control ranges is a control range for a high-precision control. | 2014-02-27 |
20140057446 | METHOD OF SILICON ETCH FOR TRENCH SIDEWALL SMOOTHING - Methods of silicon etch for trench sidewall smoothing are described. In one embodiment, a method involves smoothing a sidewall of a trench formed in a semiconductor wafer via plasma etching. The method includes directionally etching the semiconductor wafer with plasma generated from a fluorine gas to smooth the sidewall of the trench, the trench having a protective layer formed by plasma generated by a second process gas such as oxygen or a polymerization gas. In another embodiment, a method involves etching a semiconductor wafer to generate a trench having a smooth sidewall. The method includes plasma etching the semiconductor wafer with one or more first process gases including a fluorine gas, simultaneously performing deposition and plasma etching the semiconductor wafer with one or more second process gases including a fluorine gas and a polymerization gas mix, and performing deposition with one or more third process gases including a polymerization gas. | 2014-02-27 |
20140057447 | SEMICONDUCTOR PROCESSING WITH DC ASSISTED RF POWER FOR IMPROVED CONTROL - Semiconductor processing systems are described including a process chamber. The process chamber may include a lid assembly, grid electrode, conductive insert, and ground electrode. Each component may be coupled with one or more power supplies operable to produce a plasma within the process chamber. Each component may be electrically isolated through the positioning of a plurality of insulation members. The one or more power supplies may be electrically coupled with the process chamber with the use of switching mechanisms. The switches may be switchable to electrically couple the one or more power supplies to the components of the process chamber. | 2014-02-27 |
20140057448 | SUBSTRATE CONVEYING ROLLER, THIN FILM MANUFACTURING DEVICE, AND THIN FILM MANUFACTURING METHOD - A substrate-conveying roller includes a first shell, a second shell, an internal block, a manifold, and a clearance. The first shell has a plurality of first through holes serving as supply paths for a gas. The internal block is disposed inside the first shell. The manifold is formed in the internal block so as to guide the gas to the first through holes within the region of a specific angle. The clearance is formed so as to guide the gas to the first through holes outside the region of the specific angle. The second shell has second through holes for guiding the gas from the manifold to the first through holes, and is disposed between the first shell and the internal block. The central axes of the first through hole are offset from the central axes of the second through holes. | 2014-02-27 |
20140057449 | COATING METHOD OF AN ALIGNMENT FILM - Provided is a coating method of an alignment film, including: providing a board, having a substrate, the substrate forming an alignment liquid coating area thereon; forming a barrier structure around the alignment liquid coating area; coating an alignment liquid in the alignment liquid coating area, wherein the barrier structure blocks the alignment liquid to diffuse outside the alignment liquid coating area; and curing the alignment liquid to form an alignment film. The present invention may assure that the formed alignment film can not affect other areas adjacent to the alignment liquid coating area. | 2014-02-27 |
20140057450 | Wafer Bonding System and Method for Bonding and Debonding Thereof - A method of treating the surface of a semiconductor wafer through the formation of a bonding system is provided in order to enhance the handling of the wafer during subsequent processing operations. The method generally comprises the steps of applying a release layer and an adhesive to different wafers; bonding the wafers together to form a bonded wafer system; performing at least one wafer processing operation (e.g., wafer grinding, etc.) to form a thin processed wafer; debonding the wafers; and then cleaning the surface of the processed wafer with an organic solvent that is capable of dissolving the release layer or any residue thereof. The adhesive includes a vinyl-functionalized polysiloxane oligomeric resin, a Si—H functional polysiloxane oligomeric resin, a catalyst, and optionally an inhibitor, while the release layer is comprised of either a silsesquioxane-based resin or a thermoplastic resin. | 2014-02-27 |
20140057451 | METHOD OF PREVENTING CHARGE ACCUMULATION IN MANUFACTURE OF SEMICONDUCTOR DEVICE - A method of preventing a charge accumulation in the manufacturing process of a semiconductor device is provided. The method includes: forming a material layer on a substrate; patterning (or processing) the material layer; and forming a graphene layer before patterning the material layer, wherein the graphene layer is formed on a surface of the material layer or on a surface of the substrate under the material layer. The substrate may be an insulation substrate. In addition, the substrate may have a stacked structure including a plurality of layers. | 2014-02-27 |
20140057452 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM - A method of manufacturing a semiconductor device includes forming a thin film containing a predetermined element, carbon, nitrogen and a borazine ring skeleton on a substrate by performing a cycle for a first predetermined number of times. The cycle includes forming a first layer containing the predetermined element, a halogen group, carbon and nitrogen by supplying a first precursor gas containing the predetermined element and the halogen group and a second precursor gas containing the predetermined element and an amino group to the substrate, for a second predetermined number of times; and forming a second layer containing the predetermined element, carbon, nitrogen and the borazine ring skeleton by supplying a reaction gas containing a borazine compound to the substrate and allowing the first layer to react with the borazine compound to modify the first layer under a condition where the borazine ring skeleton in the borazine compound is maintained. | 2014-02-27 |
20140057453 | DEPOSITION OF THIN FILMS ON ENERGY SENSITIVE SURFACES - A process for plasma deposition of a coating is provided that includes exposure of a surface of a substrate to a source of adsorbate molecules to form a protective layer on the surface. The protective layer is then exposed in-line to a plasma volume to react the protective film to form the coating. This process occurs without an intermediate evacuation to remove the adsorbate molecules prior to contact with the plasma volume. As a result, kinetic ion impact damage to the surface is limited while efficient operation of the plasma deposition system continues. | 2014-02-27 |
20140057454 | METHODS AND APPARATUS FOR PLASMA-BASED DEPOSITION - High-deposition rate methods for forming transparent ashable hardmasks (AHMs) that have high plasma etch selectivity to underlying layers are provided. The methods involve placing a wafer on a powered electrode such as a powered pedestal for plasma-enhanced deposition. According to various embodiments, the deposition is run at low hydrocarbon precursor partial pressures and/or low process temperatures. Also provided are ceramic wafer pedestals with multiple electrode planes embedded with the pedestal are provided. According to various embodiments, the pedestals have multiple RF mesh electrode planes that are connected together such that all the electrode planes are at the same potential. | 2014-02-27 |
20140057455 | METHOD OF IMPROVING OXIDE GROWTH RATE OF SELECTIVE OXIDATION PROCESSES - A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized. | 2014-02-27 |
20140057456 | Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device - The substrate processing apparatus includes a process chamber; a susceptor configured to support a wafer; lifter pins configured to support the wafer on the susceptor; a gas supply unit configured to supply a gas into the process chamber; a heating unit configured to heat the wafer; an excitation unit configured to excite the gas supplied into the process chamber; an exhaust unit configured to exhaust the inside of the process chamber; and a controller. The controller controls a reducing gas to be supplied into the process chamber in a state in which the wafer is supported by the lifter pins, and controls the gas supply unit to supply an oxidizing gas and a reducing gas into the process chamber in a state in which the wafer is supported by the susceptor. | 2014-02-27 |
20140057457 | Non-melt thin-wafer laser thermal annealing methods - Methods of annealing a thin semiconductor wafer are disclosed. The methods allow for high-temperature annealing of one side of a thin semiconductor wafer without damaging or overheating heat-sensitive electronic device features that are either on the other side of the wafer or embedded within the wafer. The annealing is performed at a temperature below the melting point of the wafer so that no significant dopant redistribution occurs during the annealing process. The methods can be applied to activating dopants or to forming ohmic contacts. | 2014-02-27 |
20140057458 | METHOD FOR FORMING SILICON OXIDE FILM OF SEMICONDUCTOR DEVICE - A method for forming a silicon oxide film of a semiconductor device is disclosed. The method of forming the silicon oxide film of the semiconductor device includes performing surface processing using an amine-based compound, so that the uniformity and density of the silicon oxide film may be improved. | 2014-02-27 |
20140057459 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING SYSTEM - In order to provide a plasma processing method and a plasma processing system which is capable of embedding a SiN film can be performed by applying bias power, in a plasma processing method for depositing a silicon nitride film on a substrate | 2014-02-27 |
20140057460 | METHODS OF THERMALLY PROCESSING A SUBSTRATE - The present invention generally relates to methods for thermally processing substrates. In one embodiment, a substrate having an amorphous thin film thereon is subjected to a first pulse of electromagnetic energy. The first pulse of electromagnetic energy has a first fluence insufficient to complete the thermal processing. After a predetermined amount of time, the substrate is then subjected to a second pulse of electromagnetic energy having a second fluence greater than the first fluence. The second fluence is generally sufficient to complete the thermal processing. Exposing the substrate to the lower fluence first pulse before the second pulse reduces damage to a thin film disposed on the substrate. In another embodiment, a substrate is exposed to a plurality of electromagnetic energy pulses. The plurality of electromagnetic energy pulses are spaced at increasing intervals to reduce the rate of recrystallization of a film on the substrate, thus increasing the size of the crystals formed during the recrystallization. | 2014-02-27 |
20140057461 | METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE - A method for manufacturing a silicon carbide semiconductor device includes the following steps. A silicon carbide substrate is heated in an atmosphere containing oxygen, so as to form a gate insulating film on and in contact with the silicon carbide substrate. The silicon carbide substrate having the gate insulating film is heated at 1250° C. or more in an atmosphere containing nitrogen and nitrogen monoxide. A value obtained by dividing partial pressure of the nitrogen monoxide by a total of partial pressure of the nitrogen and the partial pressure of the nitrogen monoxide in the second heating step is more than 3% and less than 10%. Accordingly, there can be provided a method for manufacturing a silicon carbide semiconductor device having high mobility. | 2014-02-27 |
20140057462 | ROTARY CONNECTOR - In a rotary connector where a moving body turning with the rotation and revolution of a planetary gear and a flat cable including an inverted portion at a middle portion thereof are received in an annular space defined between an outer cylindrical body of a stationary-side housing and an inner cylindrical body of a movable-side housing, regulating walls, which extend in a circumferential direction with an opening interposed therebetween, are erected on a moving body formed of a resin molded product and the inverted portion passes through the opening so that the movement of the flat cable in a radial direction is regulated. Further, a plurality of protrusions, which protrude toward the inner peripheral surface of the outer cylindrical body, are repeatedly formed in the circumferential direction on the outer peripheral surfaces of the regulating walls. | 2014-02-27 |
20140057463 | PATIENT SUPPORT APPARATUS CONNECTORS - A patient support apparatus—such as a bed, stretcher, cot, chair, operating table, or the like—includes at least one electrical connector having at least one magnet integrated therein for magnetically retaining the connector with a complementary connector. The connector and the complementary connector may be designed such that they are retained together substantially only by magnetic forces, rather than frictional forces. Multiple magnets may be included within the connectors such that the connectors only couple together in a specific orientation. The connector may connect the patient support apparatus to a mattress positioned thereon, to a wall outlet, to a removable footboard or headboard, to a removable pedestal, or to other devices. The connector may include an internal safety switch that turns on a high voltage connection only when a low voltage connection is established. | 2014-02-27 |
20140057464 | SURFACE MOUNT COAXIAL CABLE CONNECTOR - A surface mount coaxial cable connector comprising a generally elongate block. A channel extends between the proximate and remote ends for receiving a coaxial cable and includes an upstream larger diameter channel and a downstream, smaller diameter channel for receiving with little clearance the central conductor after the shield and the outer layer have been removed. The lower surface of the block is provided with slots extending from the lower surface to the stepped channel. One slot is arranged along said central plane and aligned with the central conductor within the smaller diameter channel and two slots are offset from the central plane. A plurality of piercing blade contacts within the slot extend beyond said lower surface that have extended piercing contact portions with opposing free edges suitable for surface mounting on a printed circuit board. | 2014-02-27 |
20140057465 | ELECTRICAL CONNECTOR WITH PRINTED CIRCUIT BOARD - An electrical connector for a cable includes a PCB and a fixed element for holding the PCB. The PCB includes several first contacting fingers and second contacting fingers electrically connected to each other at different sides along a first direction. The first and second contacting fingers are respectively arranged along a second direction perpendicular to the first direction to be disposed in two rows. The second contacting fingers are connected to the cable. Wherein said PCB is longer than said fixed element so as to expose first contacting fingers at a front side of the fixed element along the first direction and form a mating port for a mating connector. | 2014-02-27 |
20140057466 | DIRECT PLUG ELEMENT HAVING IMPROVED CONTACTING - A direct plug element for contacting an electrical contact includes: a two-piece flexible direct contact having a first, separate spring element, and a second, separate spring element, the first spring element and the second spring element being situated one behind the other in a contact direction, and a first spring force of the first spring element and a second spring force of the second spring element is directed in essentially the same direction, and the second spring element includes a contact region. | 2014-02-27 |
20140057467 | ELECTRICAL CONNECTOR WITH MULTIPLE INTERFACES - An electrical connector having a body, first and second female interfaces, a female connector, one to four side interfaces and a connecting pin. The body has a longitudinal axis with a passage extending between the first and second female interfaces. The side interfaces extend from the body and are substantially perpendicular to the longitudinal axis. The interfaces have a distal end and a bus electrically connected to the female connector. The ends of the connecting pin are adapted to snugly engage louver-type connectors on male interfaces, which are inserted into the first and second female interfaces. The electrical connector is designed to minimize the distance between the first and second ends of the body. The side interfaces of the electrical connector can be designed to accommodate different high voltage connectors. | 2014-02-27 |
20140057468 | LOCKING SYSTEM FOR A PLUG COUPLING DEVICE ARRANGED ON A MOTOR VEHICLE, A CHARGING STATION OR A WALL - The invention relates to a locking system for a plug coupling device and to a plug coupling device having a housing in which the locking system according to the invention is arranged. A plug having a projection, which may for example be a guide pin of a commercially available safety plug, can be coupled to the plug coupling device by means of the locking system according to the invention, wherein a locking device in the form of a slider engages behind the projections of the plug such that the plug coupled to the plug coupling device cannot be removed from the plug coupling device. In addition, the locking device being in the locking position prevents an unauthorised insertion of a plug into the plug coupling device. | 2014-02-27 |
20140057469 | Card Connector - A card connector having a housing with a card insertion end, an opposing distal end, and a base. The card connector has a shell positioned on the housing. A card insertion space and a card ejection mechanism receiving space are both positioned between the housing and the shell. The card connector has a card ejection mechanism disposed in the card ejection mechanism receiving space. The card ejection mechanism includes a sliding member, a spring biasing the sliding member in a card-ejecting direction, a lock for locking the sliding member at a locking position; and a sliding member guide. The sliding member guide includes a first guiding member disposed on an interior surface of the base and engageable with a card insertion end of the sliding member; and a second guiding member disposed on an interior surface of the shell and engageable with a distal end of the sliding member. | 2014-02-27 |
20140057470 | ELECTRICAL CONNECTOR FOR SELF LOADING ELECTRONIC PACKAGE - An electrical connector for use with an electronic package, includes an insulative housing with a number of periphery sidewalls formed with a cavity. A guiding member is located upon the insulative housing, and includes a guiding frame with an opening and a sliding plate moveable mounted in the guiding frame. The electronic package is supported by the guiding member and pulled the sliding plate away from the guiding frame to let the electronic package enter into the cavity by passing through the opening. | 2014-02-27 |
20140057471 | RECEPTACLE STRUCTURE AND POWER ADAPTER WITH THE SAME - The receptacle includes an insulated body, a pair of pins and a micro switch. The insulated body has a recess. The pair of pins is fixed in the insulated body and located in the recess. The pair of pins includes a first pin and a second pin. The second pin electrically connects a wire. Each of the first and second pins has a free end. The recess is divided into an inner region and an outer region by the two free ends. The micro switch is movably connected in the insulated body and disposed correspondingly to the wire. The micro switch has a contact sheet which can selectively be in contact with the wire. The micro switch is located in the inner region of the recess. | 2014-02-27 |
20140057472 | CABLE CONNECTOR AND CONNECTION SYSTEM - A cable connection system that comprises a cable connector including a main housing that has first and second ends, a threaded sleeve coupled to the first end of the main housing, and a protective housing covering the main housing and coupled to the second end of the main housing. The protective housing has an open end covering the threaded sleeve. A front housing that has an open end and at least a portion of the open end of the front housing covers the open end of the protective housing, thereby forming a seal therebetween. A mating connector is configured to couple to the front housing of the cable connector. | 2014-02-27 |
20140057473 | CABLE CONNECTOR - A cable connector that comprises a main housing that has first and second ends, a threaded sleeve coupled to the first end of the main housing and a protective housing the covers the main housing and is coupled to the second end of the main housing. The protective housing has an open end that covers the threaded sleeve. A sealing ring is disposed between the protective housing and the main housing at said second end of the main housing. | 2014-02-27 |
20140057474 | Plug Connector With Keyed Removals Tools and Socket Gasket - A modular connector is provided having a connector plug, which may be inserted into an associated socket in a first longitudinal direction, a resilient leg, depending at a first end thereof from the connector plug, and having a depressible part, distal therefrom, depressible towards the connector plug, and a guard cover, configured to prevent access to the depressible part of the resilient leg in its direction of depression, but to permit access to the resilient leg in the longitudinal direction through an access aperture, the access aperture being aligned with the depressible part of the resilient leg on an axis parallel with the longitudinal direction, to allow depression of the resilient leg through the access aperture directly. Corresponding extraction tool and methods, loopback connector, blanking plug, keyed protrusions and notches, security gasket, and blanking plate and patch panel also are disclosed. | 2014-02-27 |
20140057475 | CONNECTOR - A connector includes: a housing | 2014-02-27 |
20140057476 | INSERTION/EXTRACTION FORCE REDUCING CONNECTOR - A second connector housing | 2014-02-27 |
20140057477 | LOCKING ELECTRICAL RECEPTACLE - A locking electrical receptacle includes a housing having a pair of openings and contains a pair of prong clips adapted to be connected to a source of electricity and to engage a pair of male prongs inserted through the pair of openings. A push button having a pair of locking surfaces, a pair of unlocking surfaces and a pair of ramp surfaces is positioned in the housing and extends out of the housing. A pair of locking elements are positioned within the housing and movable between a locked position, where the pair locking elements are adapted to lock a pair of male prongs inserted through the pair of openings in the housing, and an unlocked position, where the male prongs are unlocked and may be removed from the pair of openings. The pair of locking elements engage the pair of locking surfaces of the push button when in the locked position, the pair of unlocking surfaces when in the unlocked position and the pair of ramp surfaces when moving between the locked and unlocked positions. | 2014-02-27 |
20140057478 | ELECTRICAL CONNECTOR - The operability and usage durability of a lock cancellation operating part | 2014-02-27 |
20140057479 | RETENTION MECHANISM HAVING IMPROVED FATIGUE STRENGTH - A retention latch mechanism having a retention spring of a first connector engageable with a retention feature of a second connector. The retention spring may include a spring arm having a distal, curved retaining portion that is resiliently received within the retention feature and a reinforced portion that is proximal of the distal retaining portion. The reinforced portion includes a layer having residual compressive stress to inhibit fatigue failure during repeated cycling of the latch mechanism. The reinforced portion may be formed by a cold working method, such as shot peening a select region of the spring arm. The reinforced portion is formed to inhibit fatigue failure during repeated cycling of the latch mechanism. Methods of forming a retention mechanism having a retention spring with a reinforced portion are provided herein. | 2014-02-27 |
20140057480 | CONNECTOR - A connector can prevent, at a low cost, a phenomenon that a crack develops in a resin molded member to which a screwing plate portion of a terminal fitting is fixed due to a bending displacement of the screwing plate portion caused by fastening force of the screwing when the screwing plate portion is screwed to a terminal stage. A plate portion fixing portion | 2014-02-27 |
20140057481 | CONNECTOR - A connector includes a main body defining a mounting hole extending through bottom and top sides of the main body, and an indicating pin slidably received in the mounting hole of the main body. When the connector is manipulated to be coupled to an on-board connector, a base of the on-board connector moves the indicating pin upwards to make a top end of the indicating pin extend out of the main body to indicate that the connector is properly coupled to the motherboard. | 2014-02-27 |
20140057482 | CONNECTION STRUCTURE FOR FLEXIBLE CIRCUIT CABLE - A connection structure for a flexible circuit cable includes a flexible circuit cable that has a flexible circuit substrate having a first end bonded to a soldering stage of the connector housing with first finger pad conductive contacts of conductive lines of the flexible circuit cable respectively corresponding to cable soldering sections of metal conductive terminals of the connector. A soldering layer is formed between a metal coating layer of the first finger pad conductive contact of each of the conductive lines and the cable soldering section of the corresponding metal conductive terminals to set the conductive lines of the flexible circuit cable in electrical connection with the metal conductive terminals of the connector. | 2014-02-27 |
20140057483 | BRIDGE FOR AN ELECTRICAL TERMINAL - A jumper for an electrical terminal for electrical connecting a conductor rail of the electrical terminal includes a head part and a resilient pair of clamp tongues that engage into an opening of the conductor rail. Each clamp tongue includes an inner side and an outer side. The outer sides form a contact area to contact the opening. The clamp tongues are biased with a spring load such that the inner sides of a pair of clamp tongues are arranged opposite to each other, and in a non-contact state are disposed spaced apart from each other. Each clamp tongue extends from the head part towards a tip. Each inner side has a contour such that in a contact state the clamp tongues abut against each other and a gap between the inner sides is formed between the head part and the tips. | 2014-02-27 |
20140057484 | VERTICAL T-JUNCTION BLOCK ASSEMBLY - A vertical junction block assembly ( | 2014-02-27 |
20140057485 | CONNECTOR MECHANISM - A connector mechanism includes a base, a cover and a resilient component. An opening is formed on the base, and an external plug can inset into the opening. The cover is pivotably disposed on the base. The cover includes a first portion, a second portion and an axle. The first portion rotates to a first position for covering the opening, and further rotates to a second position to hold a body of the external plug. The second portion includes a buckling structure for buckling a pin of the external plug when the first portion rotates to the second position, so as to constrain a movement of the external plug relative to the base. Two ends of the resilient component respectively contact against the base and the cover, and the cover can cover the opening via a resilient recovering force of the resilient component. | 2014-02-27 |
20140057486 | ELECTRIC CONNECTOR - The electric connector includes at least one connector terminal into which a male connector terminal of a male electric connector is inserted, and a housing including a terminal storage room in which the connector terminal is housed, the housing including a support supporting the connector terminal at at least one of an outer surface and a bottom of the connector terminal when the male connector terminal is inserted into the terminal storage room for preventing the connector terminal from inclining. | 2014-02-27 |
20140057487 | Repositionable Cord Mounts for Data Communication and Power Supply - Repositionable cord mounts which have sufficient yield strength to support an electronic device in a desired orientation so that, for example, the screen of a smartphone can be elevated and/or positioned at any desired elevated position and inclined angle while being supported entirely by a cord mount. The cord mounts comprise plugs having plug bodies, typically formed of a polymeric material, from which electrical connectors extend. The surface of the plug body from which the conductive portions extend is referred to herein as the “protrusion surface”. All support for an electronic device connected to a plug is provided by one or more male portions and the protrusion surface. | 2014-02-27 |
20140057488 | POWER SUPPLY WITH ADJUSTABLE PLUG INSERTION DIRECTION - The present invention discloses a power supply including a first conductive module, a second conductive module connected to the first conductive module, and a plurality of hollow sleeves. The first conductive module and the second conductive module respectively include a plurality of first clamping parts and second clamping parts, wherein a position of each second clamping part corresponds to one of first clamping parts. The hollow sleeves are housing around the first conductive module and the second conductive module. Each hollow sleeve includes at least one plug hole, and covers one of the first clamping parts and the corresponding second clamping part. When rotating the hollow sleeve, the plug hole selectively coincides with the first clamping part or the second clamping part, so that multiple fins of a plug are inserted into the first clamping part or the second clamping part through the plug hole. | 2014-02-27 |
20140057489 | DUAL COUPLER STAY - A dual coupler stay includes a base, a cleat configured for receipt within an aperture defined by a vehicle, and a post. The base is positioned longitudinally between the cleat and the post and each of the cleat and the post is integral with the base and extends longitudinally away from the base. The dual coupler stay also includes a first flange and a second flange laterally spaced from the first flange. Each of the first flange and the second flange is integral with and extends away from the post, and is configured to support a respective electrical coupler of a vehicle. The dual coupler stay also includes a spacer that is integral with the post and extends away from the post. The spacer is positioned laterally between the first flange and the second flange. | 2014-02-27 |
20140057490 | INTEGRATED COMPRESSION CONNECTOR - An integrated compression connector that comprises a housing that has opposing first and second ends. The housing supports a pin and the pin is supported by an insulator disposed in the housing. The pin includes an elastic end for engaging a cable conductor. A threaded sleeve is externally coupled to the housing at the first end thereof. A cable clamp is externally coupled to the housing at the second end thereof. The cable clamp is configured to clamp to a corrugated outer conductor of a cable, wherein the housing engages the cable clamp in an interference fit to form an integrated structure. | 2014-02-27 |
20140057491 | CONTACT PLUG FOR DIRECTLY CONTACTING A CIRCUIT BOARD - A contact plug for direct electrical contacting of contact surfaces is provided on both sides of a circuit board. The contact plug includes two flexibly interconnected contact carriers, which form, between each other, a plug receptacle for the circuit board and each have at least one contact element extending into the plug receptacle. A spring is provided whose two free spring legs engage over the two contact carriers i the insertion direction of the contact plug and bias them in the direction of each other. A control channel, which is formed between the two contact carriers nd laterally adjacent to the plug receptacle and, in cooperation with a control wedge provided on the circuit board, pivots the two contact carriers open in opposition to the action of the spring upon insertion of the circuit board. A seal seals the two contact carriers in a mating contact plug on the reverse side. The two free spring legs of the springengage over the two contact carriers in the insertion direction of the contact plug. The seal is positioned between the contact carriers and the spring midsection of the spring, the two spring legs extending through the seal and being sealed at the seal. | 2014-02-27 |
20140057492 | Shielded Connector Assembly - An assembly is disclosed herein, including a connector and a carrier for carrying the connector. The connector includes a plurality of terminals having terminal contacts, a first shield at least partially surrounding at least one first terminal and having a first shield contact and a second shield at least partially surrounding at least one second terminal and having a second shield contact. The carrier includes a plurality of signal conductors, e.g. being a circuit board or a connector body. The carrier also includes a plurality of, advantageously substantially identical, contact sites. The terminal contacts are contacted to a number of the contact sites of the carrier, and the first and second shield contacts are arranged adjacent each other so that they together fit and are contacted to one contact site of the carrier. | 2014-02-27 |
20140057493 | HIGH SPEED ELECTRICAL CONNECTOR - An electrical connector assembly includes a first electrical connector and a second electrical connector. Each electrical connector can include an electrical ground shield that at least partially surrounds respective differential signal pairs. | 2014-02-27 |
20140057494 | HIGH-FREQUENCY ELECTRICAL CONNECTOR - An electrical connector with improved high frequency performance. The connector has conductive elements, forming both signal and ground conductors, that have multiple points of contact distributed along an elongated dimension. The ground conductors may be formed with multiple beams of different length. The signal conductors may be formed with multiple contact regions on a single beam, with different characteristics. Signal conductors may have beams that are jogged to provide both a desired impedance and mating contact pitch. Additionally, electromagnetic radiation, inside and/or outside the connector may be shaped with an insert electrically connecting multiple ground structures and/or a contact feature coupling ground conductors to a stiffener. The conductive elements in different columns may be shaped differently to reduce crosstalk. | 2014-02-27 |
20140057495 | RETRACTABLE UNIVERSAL SERIAL BUS CONNECTOR AND RETRACTABLE CONNECTOR - A retractable USB connector includes a first module and a second module. The first module has a first insulating main body and a first conductive module formed with a plurality of first conductive terminals and a plurality of a second conductive terminals. The second module has a second insulating main body and a second conductive module. The second module is linearly movable along the first module. When the second module contacts the first and second conductive terminals, electrical connection is established. In contrast, when the second module is removed from the first and second conductive terminals, electrical connection is terminated as well. | 2014-02-27 |
20140057496 | METHOD FOR IMPROVING CONNECTOR ENCLOSURE ADHESION - An improved method is employed to attach an enclosure to a connector body having relatively small geometry. One or more bonding channels are disposed in the outside surface of the connector body. During assembly of an enclosure over the connector body, a bonding material is distributed within the bonding channels and subsequently cured. The bonding channels and the bonding material are designed to employ capillary wicking to aid in the distribution of the bonding material within the bonding channels. | 2014-02-27 |
20140057497 | CONNECTOR - A connector, in which each conductive pattern includes a plate-like terminal engaging a protruding terminal on the other connector. The plate-like terminal includes a protruding terminal receiving opening for receiving the protruding terminal, a beam-like first terminal member positioned to the side of the protruding terminal receiving opening, and a first contact portion formed in the first terminal member. The first terminal member generates spring force towards the center of the connector in the lateral direction when the protruding terminal received inside the protruding terminal receiving opening moves relative to the first contact portion. | 2014-02-27 |
20140057498 | HIGH-FREQUENCY ELECTRICAL CONNECTOR - An electrical connector with improved high frequency performance. The connector has conductive elements, forming both signal and ground conductors, that have multiple points of contact distributed along an elongated dimension. The ground conductors may be formed with multiple beams of different length. The signal conductors may be formed with multiple contact regions on a single beam, with different characteristics. Signal conductors may have beams that are jogged to provide both a desired impedance and mating contact pitch. Additionally, electromagnetic radiation, inside and/or outside the connector may be shaped with an insert electrically connecting multiple ground structures and/or a contact feature coupling ground conductors to a stiffener. The conductive elements in different columns may be shaped differently to reduce crosstalk. | 2014-02-27 |
20140057499 | EXTERNAL MOUNTING OF ELECTRONIC OR ELECTRICAL DEVICES WITH SEALED INTERNAL WIRING - A connection includes one or more hollow tubular members extending outwardly from an exterior surface of a first member, a first thread provided on an exterior surface of the one or more hollow tubular members, one or more apertures formed through a thickness of a second member and sized to receive therethrough the one or more hollow tubular members, and one or more third members having a second thread sized to operatively engage the first thread, whereby the second member is securely connected to the first member. | 2014-02-27 |
20140057500 | ELECTRIC CONTACT PIN AND SOCKET FOR ELECTRICAL PARTS - A electric contact pin which can certainly contact a plunger with a contact spring and ensure smooth operation (vertical motion) of the plunger. The present invention can execute electrical tests of the electrical parts accurately. The electric contact pin according to the present invention contacts an eccentrical portion of an open coil portion provided for the contact spring capable of easily deforming in a radial direction with a conductive portion of the plunger. Consequently, the conductive portion of the plunger is elastically pinched between the eccentrical portion of the open coil portion and the closed coil portion. The eccentrical portion of the open coil portion and the closed coil portion are contact with the conductive portion of the plunger at any time. | 2014-02-27 |
20140057501 | ELECTRICAL-MECHANICAL FASTENING DEVICE FOR MOTOR VEHICLES - An electro-mechanical fastener includes a fastener body having a connection portion materially integrally formed with at least one mounting member. The at least one mounting member has a thickness that is no more than three-times greater than a thickness of a substrate to which the electro-mechanical fastener is joined. The at least one mounting member is configured and disposed to be joined to the substrate through a welded connection. | 2014-02-27 |
20140057502 | CONDUCTOR CONNECTING STRUCTURE - A conductor connecting structure comprises a flat circuit body having an insulator and a conductor, and a conductive terminal metal fitting having a conductor connecting part including a first conductor holding part and a second conductor holding part. The first conductor holding part has a first plate-like part formed into a plate-like shape, and a projecting part which projects from a surface of the first plate-like part that is faced to the conductor. The second conductor holding part has a second plate-like part formed into a plate-like shape, and a through hole arranged so as to correspond to a position of the projecting part and penetrating the second plate-like part. When the conductor is sandwiched by the first conductor holding part and the second conductor holding part, the conductor is deformed so as to be pushed into the through hole. | 2014-02-27 |
20140057503 | FLEXIBLE TERMINAL - A flexible terminal includes two flexible parts and a connecting part. Each flexible part includes an outer segment having a first end and a second end, a first bent segment having one end coupled to the first end, and an inner segment coupled to the other end of the first bent segment. The connecting part is coupled to two second ends of the outer segments. Due to the flexible arrangement of the flexible parts, the flexible parts can be flexibly deformed to fit the dimension of a fastening element. In addition, the inner segments of the flexible terminal can clip the fastening element so as to avoid the relative displacement of the flexible terminal and the fastening element during the operation. | 2014-02-27 |
20140057504 | AMPHIBIOUS PERSONNEL CARRIER RUNNING ON LAND AND WATER SURFACES - The purpose of an embodiment of this invention is, in order to satisfy the requirements for 21st century amphibious landing operations, to develop an amphibious personnel carrier capable of driving faster than 25 Km/hr on the surface of water, executing a seamless transition from sea to land and maneuvering with a mechanized task force for sustained operations ashore. This goal is achieved by the amphibious personnel carrier being composed of 4 front tires and two set of rear tracked belts including six tires configured in a 3×3 arrangement to which the principle of moving on the surface of water depending upon the elevation force being generated over the critical speed is applied, and an engine that can propel the vehicle to run on land and water surfaces with its own traction by the rolling friction over the critical speed. | 2014-02-27 |
20140057505 | WHEEL WITH FOLDING SEGMENTS - A circular folding wheel has a center wheel section encompassing the center of a circle and adapted to be mounted to an axle at the center, with a side substantially corresponding to a chord of the circle. A wheel segment is pivotally attached to the center wheel section about a pivot axis extending along the side of the center wheel section. The wheel segment is movable from a rolling orientation, where the outer edge of the wheel segment is aligned with an outer edge of the center wheel section such that the folding wheel takes a rolling circular shape, to a folded orientation where the wheel segment extends laterally away from the pivot axis. Two, three, or more wheel segments can be pivotally attached to corresponding sides of the center wheel section. | 2014-02-27 |
20140057506 | Marine tunnel thruster - Marine tunnel thruster includes a duct, within which at least a propeller is fitted that is operatively connected to a rotational drive system. The duct is composed of three sections, which include a first central section and two end sections. The first central section has a specific length and a specific diameter, while the two end sections have a specific length and a specific diameter greater than the diameter of the central section. | 2014-02-27 |
20140057507 | OUTBOARD ENGINE UNIT - An outboard engine unit includes a water pump disposed on a lower end portion of an input shaft of a transmission, and left and right cooling water feeding passages interconnecting the water pump and a cooling water inlet of an engine. The left and right cooling water feeding passages are disposed around a plurality of transmission gears disposed on the input shaft of the transmission. A cooling water drawn by the water pump is guided through the left and right cooling water feeding passages to the cooling water inlet. | 2014-02-27 |
20140057508 | MARINE PROPULSION SYSTEMS HAVING EXHAUST GAS RELIEF OUTLET - A marine propulsion system is for propelling a marine vessel in water. The system comprises an outboard motor that is coupled to a marine vessel, and that comprises an exhaust gas relief outlet that is located above the water when the outboard motor is at idle speed. A conduit conveys exhaust gas from the exhaust gas relief outlet to a discharge outlet located on the marine vessel. | 2014-02-27 |
20140057509 | RESCUE DEVICE - A rescue device comprising a throwable aerodynamic object and a rope retained thereto. The object is configured to enable a rescuer to direct it with accuracy to a person to be rescued. The rope has one end that is retained to the object and a second end that is retainable by a rescuer. The object includes a cavity within which the rope is retained until the object is thrown. When the object is thrown, most of the rope exits the cavity. The rescuer can pull on the rope at the second end after the person to be rescued grabs the rope or object. | 2014-02-27 |