| 07th week of 2013 patent applcation highlights part 40 |
| Patent application number | Title | Published |
|---|
| 20130040423 | Method of Multi-Chip Wafer Level Packaging - A method of multi-chip wafer level packaging comprises forming a reconfigured wafer using a plurality of photo-sensitive material layers. A plurality of semiconductor chips and wafers are embedded in the photo-sensitive material layers. Furthermore, a variety of through assembly vias are formed in the photo-sensitive material layers. Each semiconductor chip embedded in the photo-sensitive material layers is connected to input/output pads through connection paths formed by the through assembly vias. | 2013-02-14 |
| 20130040424 | Fixing Semiconductor Die in Dry and Pressure Supported Assembly Processes - Semiconductor die are assembled on a substrate by providing the semiconductor die, substrate, and an elastically deformable foil fixture preformed with one or more sunken regions having sidewalls and a bottom, and placing the semiconductor die in the one or more sunken regions so that the foil fixture is populated with a first side of the semiconductor die facing the bottom of the one or more sunken regions and a second opposing side of the semiconductor die facing away from the bottom of the one or more sunken regions. The substrate is placed adjacent the second side of the semiconductor die with a joining material interposed between the substrate and the semiconductor die. The substrate and the populated foil fixture are pressed together at an elevated temperature and pressure via first and second pressing tool members so that the substrate is attached to the second side of the semiconductor die via the joining material. | 2013-02-14 |
| 20130040425 | SPIRAL STAIRCASE SHAPED STACKED SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING THE SAME - A spiral staircase shaped stacked semiconductor package is presented. The package includes a semiconductor chip module, a substrate and connection members. The semiconductor chip module includes at least two semiconductor chips which have chip selection pads and through-electrodes. The semiconductor chips are stacked such that the chip selection pads are exposed and the through-electrodes of the stacked semiconductor chips are electrically connected to one another. The substrate has the semiconductor chip module mounted thereto and has connection pads. The connection members electrically connect the chip selection pads to respective connection pads. | 2013-02-14 |
| 20130040426 | MANUFACTURING METHOD USING MULTI-STEP ADHESIVE CURING FOR SEALED SEMICONDUCTOR DEVICE - A method for forming a sealing body without cracks in manufacture of a semiconductor device having an external terminal formed through the use of an electrolysis plating method. A front surface of a semiconductor wafer is placed over a front surface of a first support heated to a first temperature. An adhesive sheet is then bonded to a back surface of the semiconductor wafer, after which the semiconductor wafer is subjected to heat treatment at a second temperature higher than the first temperature. After the semiconductor wafer and the adhesive sheet are cut along cutting regions, a plurality of semiconductor chips each having an adhesive patch bonded thereto are obtained. A mother substrate is placed over a front surface of a second support heated to a third temperature and the semiconductor chips are fixed to an upper surface of the mother substrate via the adhesive patch. | 2013-02-14 |
| 20130040427 | FABRICATION METHOD OF PACKAGING SUBSTRATE HAVING THROUGH-HOLED INTERPOSER EMBEDDED THEREIN - A packaging substrate having a through-holed interposer embedded therein and a fabrication method of the packaging substrate are provided, where the packaging substrate includes: a molding layer having opposite first and second surfaces; a through-holed interposer embedded in the molding layer and flush with the second surface; a redistribution-layer structure embedded in the molding layer and disposed on the through-holed interposer and having a plurality of electrode pads exposed from the first surface of the molding layer; and a built-up structure disposed on the second surface of the molding layer and electrically connected to the through-holed interposer. | 2013-02-14 |
| 20130040428 | SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME - A semiconductor package is provided. The semiconductor package includes a package body, a plurality of semiconductor chips, and an external connection terminal. The package body is stacked with a plurality of sheets where conductive patterns and vias are disposed. The plurality of semiconductor chips are inserted into insert slots extending from one surface of the package body. The external connection terminal is provided on other surface opposite to the one surface of the package body. Here, the plurality of semiconductor chips are electrically connected to the external connection terminal. | 2013-02-14 |
| 20130040429 | METHODS OF FORMING CHARGE STORAGE STRUCTURES INCLUDING ETCHING DIFFUSED REGIONS TO FORM RECESSES - Methods are disclosed that include selectively etching diffused regions to form recesses in semiconductor material, and forming charge storage structures in the recesses. Additional embodiments are disclosed. | 2013-02-14 |
| 20130040430 | FORMATION OF A CHANNEL SEMICONDUCTOR ALLOY BY FORMING A NITRIDE BASED HARD MASK LAYER - The present disclosure provides manufacturing techniques in which sophisticated high-k metal gate electrode structures may be formed in an early manufacturing stage on the basis of a selectively applied threshold voltage adjusting semiconductor alloy. In order to reduce the surface topography upon patterning the deposition mask while still allowing the usage of well-established epitaxial growth recipes developed for silicon dioxide-based hard mask materials, a silicon nitride base material may be used in combination with a surface treatment. In this manner, the surface of the silicon nitride material may exhibit a silicon dioxide-like behavior, while the patterning of the hard mask may be accomplished on the basis of highly selective etch techniques. | 2013-02-14 |
| 20130040431 | InP-Based Transistor Fabrication - Methods of forming structures that include InP-based materials, such as a transistor operating as an inversion-type, enhancement-mode device. A dielectric layer may be deposited by ALD over a semiconductor layer including In and P. A channel layer may be formed above a buffer layer having a lattice constant similar to a lattice constant of InP, the buffer layer being formed over a substrate having a lattice constant different from a lattice constant of InP. | 2013-02-14 |
| 20130040432 | METHODS OF MANUFACTURING LATERAL DIFFUSED MOS DEVICES WITH LAYOUT CONTROLLED BODY CURVATURE AND RELATED DEVICES - The present invention discloses a method of manufacturing an N-type LDMOS device. The method comprises forming a gate above the semiconductor substrate; forming a body, comprising forming a Pwell apart from the gate and forming a Pbase partly in the Pwell, wherein the Pbase is wider and shallower than the Pwell; and forming an N-type source and a drain contact region. Wherein the body curvature of the LDMOS device is controlled by adjusting the layout width of the Pwell. | 2013-02-14 |
| 20130040433 | Semiconductor Structures Employing Strained Material Layers with Defined Impurity Gradients and Methods for Fabricating Same - Semiconductor structures and devices including strained material layers having impurity-free zones, and methods for fabricating same. Certain regions of the strained material layers are kept free of impurities that can interdiffuse from adjacent portions of the semiconductor. When impurities are present in certain regions of the strained material layers, there is degradation in device performance. By employing semiconductor structures and devices (e.g., field effect transistors or “FETs”) that have the features described, or are fabricated in accordance with the steps described, device operation is enhanced. | 2013-02-14 |
| 20130040434 | SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THE SAME - In a semiconductor device having element isolation made of a trench-type isolating oxide film | 2013-02-14 |
| 20130040435 | METHOD FOR MANUFACTURING TRANSISTOR AND SEMICONDUCTOR DEVICE - A method for manufacturing a transistor and a semiconductor device is provided. The method for manufacturing a transistor may comprise: defining an active area on a semiconductor substrate, and forming on the active area a gate stack or a dummy gate stack, a source/drain extension region, a spacer and a source/drain region, wherein the source/drain extension region is embedded in the active area and self-aligned on both sides of the gate stack or dummy gate stack, the spacer surrounds the gate stack or dummy gate stack, and the source/drain region is embedded in the active area and self-aligned outside the spacer; removing at least a portion of the spacer to expose a portion of the active area; and forming an interlayer dielectric layer which covers the gate stack or dummy gate stack, the spacer and the exposed active area, wherein the dielectric constant of the material of the interlayer dielectric layer is smaller than that of the removed material of the spacer. It is beneficial for reducing the capacitance between the gate region and the source/drain region as well as between the gate region and the contact plug. | 2013-02-14 |
| 20130040436 | THROUGH SUBSTRATE VIA WITH EMBEDDED DECOUPLING CAPACITOR - A method of manufacturing a semiconductor die having a substrate with a front side and a back side includes fabricating openings for through substrate vias on the front side of the semiconductor die. The method also includes depositing a first conductor in the through substrate vias, depositing a dielectric on the first conductor and depositing a second conductor on the dielectric. The method further includes depositing a protective insulator layer on the back side of the substrate covering the through substrate vias. | 2013-02-14 |
| 20130040437 | Method of Manufacturing Composite Substrate - A composite-substrate manufacturing method is provided with: a step of carrying out implantation of ions through a surface of a bulk substrate composed of the nitride compound semiconductor; a step of setting said surface of the bulk substrate against the second substrate, and bonding the bulk substrate and the second substrate together to obtain a bonded substrate; a step of elevating the temperature of the bonded substrate to a first temperature; a step of sustaining the first temperature for a fixed time; and a step of producing a composite substrate by severing the remaining portion of the bulk substrate from the bonded substrate; characterized in that a predetermined formula as for the first temperature, the thermal expansion coefficient of the first substrate, and the thermal expansion coefficient of the second substrate is satisfied. | 2013-02-14 |
| 20130040438 | EPITAXIAL PROCESS WITH SURFACE CLEANING FIRST USING HCl/GeH4/H2SiCl2 - A method of depositing an epitaxial layer that includes chemically cleaning the deposition surface of a semiconductor substrate and treating the deposition surface of the semiconductor substrate with a hydrogen containing gas at a pre-bake temperature. The hydrogen containing gas treatment may be conducted in an epitaxial deposition chamber. The hydrogen containing gas removes oxygen-containing material from the deposition surface of the semiconductor substrate. The deposition surface of the semiconductor substrate may then be treated with a gas flow comprised of at least one of hydrochloric acid (HCl), germane (GeH | 2013-02-14 |
| 20130040439 | METHOD OF MODIFYING ELECTRICAL PROPERTIES OF CARBON NANOTUBES USING NANOPARTICLES - Various embodiments relate to a method of modifying the electrical properties of carbon nanotubes. The method may include providing a substrate having carbon nanotubes deposited on a surface of the substrate, and depositing on the carbon nanotubes a coating layer comprising a mixture of nanoparticles, a matrix in which the nanoparticles are dissolved or stabilized, and an ionic liquid. A field-effect transistor including the modified carbon nanotubes is also provided. | 2013-02-14 |
| 20130040440 | EPITAXIAL PROCESS WITH SURFACE CLEANING FIRST USING HCl/GeH4/H2SiCl2 - A method of depositing an epitaxial layer that includes chemically cleaning the deposition surface of a semiconductor substrate and treating the deposition surface of the semiconductor substrate with a hydrogen containing gas at a pre-bake temperature. The hydrogen containing gas treatment may be conducted in an epitaxial deposition chamber. The hydrogen containing gas removes oxygen-containing material from the deposition surface of the semiconductor substrate. The deposition surface of the semiconductor substrate may then be treated with a gas flow comprised of at least one of hydrochloric acid (HCl), germane (GeH | 2013-02-14 |
| 20130040441 | VAPOR-PHASE GROWTH METHOD FOR SEMICONDUCTOR FILM - A process for supplying a mixed material gas that includes a chlorosilane gas and a carrier gas to a surface of a substrate heated at 1200 to 1400° C. from a direction perpendicular to the surface is provided. A supply rate of the chlorosilane gas is equal to or more than 200 μmol per minute per 1 cm | 2013-02-14 |
| 20130040442 | METHOD OF MANUFACTURING GaN-BASED FILM - The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided. | 2013-02-14 |
| 20130040443 | Method for Manufacturing a Semiconductor Device - A method for forming a semiconductor device is provided. The method includes providing a semiconductor body with a horizontal surface. An epitaxy hard mask is formed on the horizontal surface. An epitaxial region is formed by selective epitaxy on the horizontal surface relative to the epitaxy hard mask so that the epitaxial region is adjusted to the epitaxy hard mask. The epitaxial region is polished by a chemical-mechanical polishing process stopping on the epitaxy hard mask. A vertical trench is formed in the semiconductor body. An insulated field plate is formed in a lower portion of the vertical trench and an insulated gate electrode is formed above the insulated field plate. Further, a method for forming a field-effect semiconductor device is provided. | 2013-02-14 |
| 20130040444 | METHOD AND APPARATUS FOR SELECTIVE NITRIDATION PROCESS - Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port. | 2013-02-14 |
| 20130040445 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A silicon carbide substrate having a surface is prepared. An impurity region is formed by implanting ions from the surface into the silicon carbide substrate. Annealing for activating the impurity region is performed. The annealing includes the step of applying first laser light having a first wavelength to the surface of the silicon carbide substrate, and the step of applying second laser light having a second wavelength to the surface of the silicon carbide substrate. The silicon carbide substrate has first and second extinction coefficients at the first and second wavelengths, respectively. A ratio of the first extinction coefficient to the first wavelength is higher than 5×10 | 2013-02-14 |
| 20130040446 | Backside Surface Treatment of Semiconductor Chips - A method includes performing a grinding to a backside of a semiconductor substrate, wherein a remaining portion of the semiconductor substrate has a back surface. A treatment is then performed on the back surface using a method selected from the group consisting essentially of a dry treatment and a plasma treatment. Process gases that are used in the treatment include oxygen (O | 2013-02-14 |
| 20130040447 | CONFORMAL DOPING VIA PLASMA ACTIVATED ATOMIC LAYER DEPOSITION AND CONFORMAL FILM DEPOSITION - Disclosed herein are methods of doping a patterned substrate in a reaction chamber. The methods may include forming a first conformal film layer which has a dopant source including a dopant, and driving some of the dopant into the substrate to form a conformal doping profile. In some embodiments, forming the first film layer may include introducing a dopant precursor into the reaction chamber, adsorbing the dopant precursor under conditions whereby it forms an adsorption-limited layer, and reacting the adsorbed dopant precursor to form the dopant source. Also disclosed herein are apparatuses for doping a substrate which may include a reaction chamber, a gas inlet, and a controller having machine readable code including instructions for operating the gas inlet to introduce dopant precursor into the reaction chamber so that it is adsorbed, and instructions for reacting the adsorbed dopant precursor to form a film layer containing a dopant source. | 2013-02-14 |
| 20130040448 | METHODS OF FORMING METAL OR METAL NITRIDE PATTERNS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES - In a method of forming a metal or metal nitride pattern, a metal or metal nitride layer is formed on a substrate, and a photoresist pattern is formed on the metal or metal nitride layer. An over-coating composition is coated on the metal or metal nitride layer and on the photoresist pattern to form a capping layer on the photoresist pattern. The over-coating composition includes a polymer having amine groups as a side chain or a branch and a solvent. A remaining portion of the over-coating composition is removed by washing with a hydrophilic solution. The metal or metal nitride layer is partially removed using the capping layer and the photoresist pattern as an etching mask. | 2013-02-14 |
| 20130040449 | ULTRAVIOLET ENERGY SHIELD FOR NON-VOLATILE CHARGE STORAGE MEMORY - An integrated circuit with non-volatile memory cells shielded from ultraviolet light by a shielding structure compatible with chemical-mechanical processing. The disclosed shielding structure includes a roof structure with sides; along each side are spaced-apart contact posts, each with a width on the order of the wavelength of ultraviolet light to be shielded, and spaced apart by a distance that is also on the order of the wavelength of ultraviolet light to be shielded. The contact posts may be provided in multiple rows, and extending to a diffused region or to a polysilicon ring or both. The multiple rows may be aligned with one another or staggered relative to one another. | 2013-02-14 |
| 20130040450 | Methods of Forming a Dielectric Cap Layer on a Metal Gate Structure - Disclosed herein are various methods of forming metal-containing insulating material regions on a metal layer of a gate structure of a semiconductor device. In one example, the method includes forming a gate structure of a transistor, the gate structure comprising at least a first metal layer, and forming a first metal-containing insulating material region in the first metal layer by performing a gas cluster ion beam process using to implant gas molecules into the first metal layer. | 2013-02-14 |
| 20130040451 | METHOD FOR PERMANENT CONNECTION OF TWO METAL SURFACES - A process for the production of a permanent, electrically conductive connection between a first metal surface of a first substrate and a second metal surface of a second substrate, wherein a permanent, electrically conductive connection is produced, at least primarily, by substitution diffusion between metal ions and/or metal atoms of the two metal surfaces. | 2013-02-14 |
| 20130040452 | Methods of Forming Semiconductor Devices Having Narrow Conductive Line Patterns - Semiconductor devices and methods of forming semiconductor devices are provided in which a plurality of patterns are simultaneously formed to have different widths and the pattern densities of some regions are increased using double patterning. The semiconductor device includes a plurality of conductive lines each including a first line portion and a second line portion, where the first line portion extends on a substrate in a first direction, the second line portion extends from one end of the first line portion in a second direction, and the first direction is different from the second direction; a plurality of contact pads each of which is connected with a respective conductive line of the plurality of conductive lines via the second line portion of the corresponding conductive line; and a plurality of dummy conductive lines each including a first dummy portion extending from a respective contact pad of the plurality of contact pads, in parallel with the corresponding second line portion in the second direction. | 2013-02-14 |
| 20130040453 | Through Silicon Via Layout - A system and method for forming under bump metallization layers that reduces the overall footprint of UBMs, through silicon vias, and trace lines is disclosed. A preferred embodiment comprises forming an under bump metallization layer over a plurality of through silicon vias, whereas the UBM is connected to only a portion of the total number of through silicon vias over which it is located. The trace lines connected to the through silicon vias may additionally be formed beneath the UBM to save even more space on the surface of the die. | 2013-02-14 |
| 20130040454 | Annealing Copper Interconnects - A method for modifying the chemistry or microstructure of silicon-based technology via an annealing process is provided. The method includes depositing a reactive material layer within a selected proximity to an interconnect, igniting the reactive material layer, and annealing the interconnect via heat transferred from the ignited reactive material layer. The method can also be implemented in connection with a silicide/silicon interface as well as a zone of silicon-based technology. | 2013-02-14 |
| 20130040455 | HIGH TEMPERATURE ANNEAL FOR STRESS MODULATION - A method for modulating stress in films formed in semiconductor device manufacturing provides for high temperature annealing of an as-deposited compressive film such as titanium nitride. The high temperature annealing converts the initially compressive film to a tensile film without compromising other film qualities and characteristics. The converted tensile films are particularly advantageous as work function adjusting films in PMOS transistor devices and are advantageously used in conjunction with additional metal gate materials. | 2013-02-14 |
| 20130040456 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - According to one embodiment, a method of manufacturing a semiconductor device is provided. In the method, a groove is formed in a insulating film on a semiconductor substrate. An underlayer film is formed on the insulating film. A metal film is formed on the underlayer film. First polishing, in which the metal film is removed, is performed by supplying a first CMP slurry containing metal ions. The surfaces of the polishing pad and the semiconductor substrate are cleaned by supplying organic acid and pure water. Second polishing, in which the underlayer film is removed from the portion other than the groove, is performed by supplying a second CMP slurry different from the first CMP slurry. | 2013-02-14 |
| 20130040457 | POWER MOSFET CONTACT METALLIZATION - A structure includes a semiconductor device formed in a substrate; an insulator adjacent to the semiconductor device; an electrical contact electrically coupled to the semiconductor device, wherein the electrical contact includes tungsten; and an electrical connector coupled to the electrical contact, wherein the electrical connector includes aluminum. A surface of the insulator and a surface of the electrical contact form a substantially even surface. | 2013-02-14 |
| 20130040458 | APPARATUS AND METHOD FOR CONFORMAL MASK MANUFACTURING - A manufacturing process technology creates a pattern on a first layer using a focused ion beam process. The pattern is transferred to a second layer, which may act as a traditional etch stop layer. The pattern can be formed on the second layer without irradiation by light through a reticle and without wet chemical developing, thereby enabling conformal coverage and very fine critical feature control. Both dark field patterns and light field patterns are disclosed, which may enable reduced or minimal exposure by the focused ion beam. | 2013-02-14 |
| 20130040459 | SUBSTRATE WIRING METHOD AND SEMICONDUCTOR MANUFACTURING DEVICE - In a substrate wiring method, copper is embedded all the way to the lowest parts of a wiring pattern formed on a substrate. The method is used to wire a substrate in a processing chamber kept in a vacuum state, the substrate having a wiring pattern formed thereon. The method includes a preprocessing step in which the wiring pattern on the substrate is cleaned using a desired cleaning gas and an embedding step in which, after the preprocessing step, metal nanoparticles are embedded in the wiring pattern using a clustered metal gas. | 2013-02-14 |
| 20130040460 | METHODS FOR ATOMIC LAYER DEPOSITION - A method of depositing a thin film by atomic layer deposition (ALD) on a substrate surface is disclosed. The disclosed method includes placing an ALD deposition proximity head above the substrate with at least one gas channel configured to dispense a gas to an active process region of the substrate surface. The ALD deposition proximity head extends over and is being spaced apart from the active process region of the substrate surface when present. After a pulse of a first reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head, a pulse of a second reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head to react with the first reactant gas to form a portion of the thin layer of ALD film on the surface of substrate underneath the proximity head. | 2013-02-14 |
| 20130040461 | POLISHING COMPOSITION AND POLISHING METHOD - A polishing composition contains at least one water soluble polymer selected from the group consisting of polyvinylpyrrolidone and poly(N-vinylformamide), and an alkali, and preferably further contains at least one of a chelating agent and an abrasive grain. The water soluble polymer preferably has a weight average molecular weight of 6,000 to 4,000,000. The polishing composition is mainly used in polishing of the surfaces of semiconductor wafers such as silicon wafers, especially used in preliminary polishing of the surfaces of such wafers. | 2013-02-14 |
| 20130040462 | METHOD OF FABRICATING A SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device for improving the performance of “Σ” shaped embedded source/drain regions is disclosed. A “U” shaped recess is formed in a Si substrate. The recess is treated with a surfactant, the amount of surfactant adsorbed on the recess sidewalls being greater than that on the recess bottom. An oxide is formed on the bottom. The presence of surfactant on the sidewalls, prevents oxide from forming thereon. The surfactant on the sidewalls is then removed and an orientation selective wet etching process is performed on the sidewalls. The oxide protects the Si at the bottom is from being etched. | 2013-02-14 |
| 20130040463 | METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE - A mask layer is formed by: a step in which a first photoresist layer is formed, exposed, and developed on a substrate, thereby forming a first photoresist pattern; a step in which the first photoresist pattern is made insoluble; a step in which a second photoresist layer is formed, exposed, and developed on top of the first photoresist layer, thereby forming a second photoresist pattern that intersects the first photoresist pattern; a step in which the second photoresist pattern is made insoluble; and a step in which a third photoresist layer is formed, exposed, and developed on top of the first and second photoresist patterns, thereby forming a third photoresist pattern. | 2013-02-14 |
| 20130040464 | METHOD OF PATTERNING A LOW-K DIELECTRIC FILM - Methods of patterning low-k dielectric films are described. | 2013-02-14 |
| 20130040465 | Etch-Back Method for Planarization at the Position-Near-Interface of an Interlayer Dielectric - The invention discloses an etch-back method for planarization at the position-near-interface of an interlayer dielectric (ILD), comprising: depositing or growing a thick layer of SiO | 2013-02-14 |
| 20130040466 | LASER PROCESSING METHOD - In a modified region forming step, an element-group formation substrate ( | 2013-02-14 |
| 20130040467 | SWIVEL SOCKET - An apparatus for supporting an electrical connection, the apparatus including attachment means for enabling the apparatus to be mounted to a surface, a frame means rotatably coupled to the attachment means, an electrical connection coupled to the frame means, and an electrical wire coupled to the electrical connection. | 2013-02-14 |
| 20130040468 | REMOTE-CONTROLLED MIRROR DRIVE UNIT AND METHOD FOR ASSEMBLING REMOTE-CONTROLLED MIRROR - Provided is a remote-controlled mirror drive unit, the drive unit eliminating the need to provide a splice portion that short-circuits terminals of two motors at a halfway position in a mirror harness and enabling the short-circuit part to be arranged outside a mirror unit. A mirror harness includes four wires connected respectively to four terminals of two mirror angle adjustment motors. The mirror harness is led to a vehicle body inner portion through a mirror housing and a mirror base. In the vehicle body inner portion, a mirror switch circuit is disposed. Three wires that supply drive power to the motors are drawn out from the mirror switch circuit. The four wires and the three wires are interconnected in an in-vehicle body connector. Here, two wires are connected to one wire, and two wires are individually connected to two wires. | 2013-02-14 |
| 20130040469 | ELECTRICAL CONNECTOR - An electrical connector includes a first connector, and a second connector detachably coupled to the first connector. The first connector has a first magnetic body and at least one first conductive body. The second connector has a second magnetic body and at least one second conductive body. The first magnetic body is capable of magnetically attracting the second magnetic body to form a sealed enclosure to receive the at least one first conductive body and the at least one second conductive body. The at least one first conductive body electrically connects to the at least one second conductive body when the first magnetic body is magnetically bound to the second magnetic body. | 2013-02-14 |
| 20130040470 | MAGNETIC INSERT AND RECEPTACLE FOR CONNECTOR SYSTEM - A magnetic connector system having a durable and reliable construction and a reduced height while maintaining sufficient holding strength. A connector insert may utilize a crimping piece to crimp a braiding of a cable. The crimping piece may be fixed to an attraction plate and a board in the insert for mechanical reliability. Retention clips may be used to fix a shell to the attraction plate. A connector receptacle may employ a magnetically conductive label to improve holding strength. | 2013-02-14 |
| 20130040471 | INTERPOSER FOR COBRA HEAD STREETLIGHT - An interposer adapted to interrupt the power source of a streetlight and intervening between an existing photo-controller and the streetlight with a lamp connected to a power line, the interposer having a body having a top and a bottom, the top of the body having an electrical receptacle, the bottom of the body having an electrical plug, the body containing a microprocessor and a load switch connected to the main power line and lamp, wherein the microprocessor instructs the load switch to selectively connect and disconnect the power line and the lamp, or to dim a multi-level lighting device. | 2013-02-14 |
| 20130040472 | SOCKET CONNECTOR HAVING CONTACT TERMINAL INCORPORATED WITH SELF-REPELLING CONTACT TIP - An electrical device for electrically connection an electronic component, comprises a substrate, and a plurality of contact units mounted on the substrate. The contact units each comprises a lower contact positioned on the substrate and an upper contact coupled to the lower contact. The upper contact is floatably received in a receiving space defined by the lower contact and upward and downward movement of the upper contact relative to the lower contact are limited by the lower contact. | 2013-02-14 |
| 20130040473 | CONNECTOR STRUCTURE FOR DEVICE CONNECTION - A connector structure for device connection includes one connector provided on one device case and the other connector provided on the other device case The one connector includes an insulating housing having a plurality of accommodation recessed sections arrange in parallel, terminals having respective contact plate sections accommodated in the respective accommodation recessed sections, and the conductive rubbers which are in contact with the respective contact plate sections and are accommodated in the respective accommodation recessed sections. The other connector includes terminals respectively having contact plate sections which are pressed to be in contact with the respective conductive rubbers when the two cases are fixed to each other, and an insulating housing which accommodates the terminals. | 2013-02-14 |
| 20130040474 | ELECTRICAL CONNECTOR DEVICE AND CONNECTOR USED IN THE ELECTRICAL CONNECTOR DEVICE - An electrical connector device includes a first connector including a first metal shell member; and a second connector to be mounted on a board and including a second metal shell member. The second connector includes an opening portion for receiving a fitting portion of the first connector in a fitting direction. The second metal shell member includes a ground connecting portion to be contacted with the board and a ground contacting member situated in a cut hole. The ground contacting member is arrange to be capable of contacting with the first metal shell member. The ground connecting portion is arranged partially on a first imaginary straight line perpendicular to the fitting direction and a second imaginary straight line in parallel to the fitting direction so that the cut hole is not situated on the first imaginary straight line and is situated partially on the second imaginary straight line. | 2013-02-14 |
| 20130040475 | CONNECTOR - A connector (A) includes a partition ( | 2013-02-14 |
| 20130040476 | CARD EDGE CONNECTOR - A card edge connector ( | 2013-02-14 |
| 20130040477 | BOARD CONNECTOR - A board connector comprising: a contact comprising a first and a second clipping portion and for clipping therebetween a board which is inserted from the outside, a first beam portion supporting the first clipping portion, and a second beam portion supporting the second clipping portion; a housing that supports the contact; an actuator that is fixed to the first beam portion; and a metal locking member that is fixed to the actuator, wherein the metal locking member has an action point portion that is formed at a position which is brought into physical contact with the board at the time of insertion of the board, and that is pushed by the board at the time of the insertion of the board. | 2013-02-14 |
| 20130040478 | Card Connector - A card connector for receiving a card includes an insulating housing having a base board and an extending portion protruded rearward from one end of a rear of the base board. One side of the base board defines a sliding recess of which a bottom wall defines a guiding slot extending along an insertion direction of the card. The sliding recess is further spread rearward into the extending portion. An ejecting device for ejecting the card out of the card connector includes a slider slidably disposed in the sliding recess. A guiding portion is protruded on a bottom of the slider and received in the guiding slot for guiding the movement of the slider. A cover has a base plate covered on the base board and an extending plate extended rearward from one end of a rear of the base plate to be covered on the extending portion. | 2013-02-14 |
| 20130040479 | ADUSTABLE POWER PLUG, ELECTRONIC DEVICE HAVING THE SAME, AND HOLDER THEREOF - The instant disclosure relates to an adjustable power plug, which includes an insulating base, a pair of first pins, and a second pin. The insulating base has a main portion and a central portion movably engaged thereto. The main portion and the central portion are linearly movable with respect to each other. The first pins are disposed on the main portion, while the second pin is disposed on the central portion. When the main portion and the central portion are displaced with respect to each other, the second pin remains parallel to the first pins. The first and second pins may be arranged in an operating state or a non-operating state. The instant disclosure also discusses an electronic device having the adjustable power plug and a holder for accommodating the plug. | 2013-02-14 |
| 20130040480 | Isolated Pressure Compensating Electric Motor Connection and Related Methods - Isolated pressure compensating electrical motor connections and related methods are provided. According to an example of a sealed motor electrical connection, the connection incorporates a sealed female motor connection positioned to receive a male motor connector. The female motor connector has one or more independent dielectric oil chambers each pressure compensated by a bellow or similar device interfaced with the motorhead oil and/or well annulus fluid to thereby pressure compensate the chamber pressure of the female motor connection with that of the internal motor and/or well annulus. This configuration locates the electrical connection point of the motor lead extension with the motor lead wires to a separate area outside the motor to thereby prevent the occurrence of phase to phase or phase to ground shorts occurring in this critical area due to conductive element contamination that may reside in the motor oil or the well bore fluids. | 2013-02-14 |
| 20130040481 | U-Channel Coaxial F-Connector - An F-connector for a coaxial cable comprises a front insulator, a back insulator, a connecting lead, and a locking ring. The connecting lead has an interior portion and an exterior portion. The interior portion is configured with a pair of side wall portions which are parallel to each other, and which together with a bottom portion form a U-shaped channel. The side wall portions each comprise a curved portion that are configured to grip the center conductor of the coaxial cable so as to withstand a certain level of withdrawal force, and such that the F-connector exhibits a desired impedance of 75 Ohms. The connecting lead engages with the front insulator and the back insulator such that the components are held in position within a connector body. | 2013-02-14 |
| 20130040482 | ELECTRICAL CONNECTOR WITH SIDE-MOUNTED LATCH - An electrical connector may retain a substrate in secure, mating engagement with the electrical connector. The electrical connector can include at least one attachment member that is configured to engage a side of the substrate so as to attach the electrical connector to the substrate when the electrical connector is mated with the substrate. | 2013-02-14 |
| 20130040483 | ELECTRICAL CONNECTOR WITH LATCH - An electrical connector may retain a substrate in secure, mating engagement with the electrical connector. The electrical connector can include at least one attachment member that is configured to be received in an aperture that extends through the substrate. | 2013-02-14 |
| 20130040484 | CABLE/HARNESS TEST CONNECTOR - A wiring analyzer system with a zero-insertion-force (ZIF) connector/receiver interface. An electrical connection is made by inserting a male connector into a female receiver slot. During insertion into the female receiver slot, the male connector experiences minimal, if any, resistive force. The female receiver comprises a set of opposing spring contacts designed to pinch both sides of the wafer, making contact with the male connector. A pair of elongated plates has several sections cut out to correspond with each female slot such that when the male connector is inserted between the spring contacts the wafer passes through both plates. In order to create the necessary pinching action, a force is exerted on the plates, causing them to move a distance in opposite directions. This motion brings the plates into contact with the spring contacts, squeezing them together against the wafer and creating a firm contact. | 2013-02-14 |
| 20130040485 | ELECTRICAL CONNECTOR INCLUDING GUIDANCE AND LATCH ASSEMBLY - An electrical connector assembly includes first and second electrical connectors that include complementary guidance members and complementary latch members that engage when the first and second electrical connectors are mated. | 2013-02-14 |
| 20130040486 | MANUAL UNLOCKING STRUCTURE FOR POWER FEEDING PLUG LOCKING DEVICE - A manual unlocking structure arranged in a locking device for locking a power feeding plug to a power receiving connector arranged in a vehicle. The power feeding plug includes a hook. The locking device includes a fastening member capable of fastening the hook to the power receiving connector to lock the power feeding plug to the power receiving connector. The manual unlocking structure includes an operation member that is manually operable to move and separate the fastening member from the hook. A user operates the operation member to manually unlock the power feeding plug. An operation box is arranged in the vehicle and used to manually operate the operation member in the vehicle. | 2013-02-14 |
| 20130040487 | Plug Connector Set and Plate for Said Plug Connector Set - A plug connector set has first and second plug connector parts, an unlocking part and a plate. The first plug connector has at least one first contact element and a latching lug. The second plug connector part has at least one second contact element. An unlocking part is used to displace the latching lug out of a locking position into the unlocking position or for latching to the latching lug and locking the first and second plug connector part to each other. A plate is adjacent to the latching lug and projects away from the first plug connector part. | 2013-02-14 |
| 20130040488 | CONNECTOR - A connector has a first housing ( | 2013-02-14 |
| 20130040489 | Structure of Power Socket - An improved structure of power socket, which comprising: a casing block and a faceplate allowing to accommodate several power terminals, earthing terminals and electric switches, and the positive/negative contacts of power terminals, the contacts of earthing terminals and positive/negative contacts of electric switches are formed integrally at interval via a metal sheet, thus reducing substantially the number of spare parts and. facilitate the wiring; moreover, the faceplate is particularly made of transparent materials, allowing to visualize its interiors, improve the visual texture and sense of fashion, and also enhance the aesthetic feeling of indoor decorative environment; besides, the power socket can be applied to the faceplate of previous wall-mounted socket, enabling convenient replacement or assembly by the users, avoiding waste of resources and saving cost. | 2013-02-14 |
| 20130040490 | CABLE CONNECTOR - There is provided a cable connector ( | 2013-02-14 |
| 20130040491 | CABLE CONNECTOR ASSEMBLY WITH AN IMPROVED SHELL - A cable connector assembly comprises an insulative housing ( | 2013-02-14 |
| 20130040492 | CABLE CONNECTOR ASSEMBLY WITH A CRIMPING RING - A cable connector assembly comprises an insulative housing ( | 2013-02-14 |
| 20130040493 | CABLE CONNECTOR ASSEMBLY WITH AN IMPROVED SHELL - A cable connector assembly ( | 2013-02-14 |
| 20130040494 | SUPPLY MODULE AND DRIVE MODULE - A supply module for supplying electric current to a drive module includes a first connecting contact and a second connecting contact. The first connecting contact is configured to connect the supply module to the drive module. The second connecting contact is configured to provide a connection to a power supply. At least one fuse element is arranged between the first connecting contact and the second connecting contact, the fuse element being connected to the two connecting contacts and being configured to limit a current flow between the first connecting contact and the second connecting contact. | 2013-02-14 |
| 20130040495 | Electrical Outlet Cover and Method of Use Thereof - A cover for an electrical outlet that has a front with a socket having apertures dimensioned to accept the blades of an electrical plug. The electrical outlet cover is formed as a thin conforming surface that has plug slots therein that align with the socket. The plug slots are dimensioned to permit the blades of the plug to pass therethrough, and the thin surface extends over the front of the electrical outlet entirely except for its socket apertures. | 2013-02-14 |
| 20130040496 | ELECTRICAL CONNECTOR - An electrical connector includes: (a) an electrical connection base, in which a notch is opened forwards at a rear side of the electrical connection base, at least one protruding block, at least one first receiving hole, and at least two second receiving holes are opened forwards from the notch, (b) at least one first terminal, having a vertical first connecting portion correspondingly, and (c) at least two second terminals, each having a vertical second connecting portion correspondingly disposed in the notch. The protruding block has an increased thickness, thus effectively ensuring functions of the protruding block of protecting terminals, isolating the first connecting portion from the second connecting portion and avoiding short circuit between the first connecting portion and the second connecting portion. | 2013-02-14 |
| 20130040497 | PCB CONNECTION UNIT - An electronic device comprising a base printed circuit board (PCB); a first edge card socket mounted on said base PCB, said socket having PCB contacts; and a PCB connection unit having PCB contacts thereon, said unit being slideably connectable to said first edge card socket and adapted to be slideably inserted into, and to make electrical contact with, a second edge card socket mounted on a second base PCB. | 2013-02-14 |
| 20130040498 | ELECTRICAL CONNECTOR - The present invention relates to an electrical connector. The electrical connector includes an insulating body having a plurality of card slots recessed at a front end. The insulating body has adjacent a plurality of first and second receiving slots disposed at a rear end of the card slots. Each of a plurality of first terminals has a first connecting portion received in the first receiving slot. Each of a plurality of second terminals has a second connecting portion received in the first receiving slot. The second terminal has an extending portion extending laterally, entering the first receiving slot, and disposing in a front-rear manner relative to a corresponding part of the first terminal. The insulating body has a gap defined between the extending portion and an adjacent extending portion. | 2013-02-14 |
| 20130040499 | ELECTRICAL CONNECTOR WITH DIFFERENT CONTACTS SHARING A SAME SOLDERING LEG - An electrical connector includes an insulative housing defining a tongue plate, a first set of contacts disposed upon the tongue plate, a second set of contacts disposed upon the tongue plate, and an inner PCB retained in the housing. The inner PCB defines at least one input connecting portion, at least one output connecting portion electrically connected with the at least one input connecting portion, and a first soldering leg connecting with the at least one output connecting portion. At least one of the first set of contacts connect with the first soldering leg, and at least one of the second set of contacts connect with the at least one input connecting portion to share the first soldering leg for mounting onto the mother PCB. | 2013-02-14 |
| 20130040500 | POWER CONNECTOR - An electrical power connector can include a connector housing having a front end defining a mating interface that includes a receptacle defined by opposing first and second surfaces. The interface can further include a plurality of first dividers that extend from the first surface and into the receptacle, and a plurality of second dividers that extend from the second surface and into the receptacle. The connector can further include a first row of contact beams and a second row of contact beams supported by the housing. Each contact beam of the first and second rows extends at least partially into the receptacle. The contact beams of the first row are separated from each other by the first dividers, and the contact beams of the second row are separated from each other by the second dividers such that a minimum creep distance between adjacent contact beams is greater than 1.0 mm. | 2013-02-14 |
| 20130040501 | Mini Display Port Connector - An electrical connector for connection with a circuit board having a plurality of through holes and a plurality of SMT contacts. The electrical connector having a plurality of through hole terminals positioned according to the plurality of through holes and arranged in a top-down manner along an upper row and a lower row, and a plurality of SMT terminals positioned sequentially adjacent to each other along a common row in corresponding position to the plurality of SMT contacts on the circuit board. | 2013-02-14 |
| 20130040502 | CONNECTOR - A connector includes a first connector and a second connector configured to engage with the first connector to establish electrical connection, wherein the first connector includes a first contact terminal, and the second connector includes: a second contact terminal configured to come in contact with the first contact terminal; a switch part connected to the second contact terminal and including a fixed part and a movable part; and a movable member capable of pushing the movable part toward the fixed part, wherein the movable member is pushed by the first connector when the first connector engages with the second connector, and the movable member pushes the movable part toward the fixed part to bring the movable part in contact with the fixed part. | 2013-02-14 |
| 20130040503 | ELECTRICAL CONNECTOR WITH SEPARABLE CONTACTS - A contact sub-assembly is provided for an electrical connector. The contact sub-assembly includes a printed circuit and an array of mating contacts. Each mating contact includes a terminating end portion and a mating interface. The contact sub-assembly also includes an array of circuit contacts that is discrete from the array of mating contacts. Each circuit contact is engaged with and electrically connected to the printed circuit. Each circuit contact is separably engaged with and electrically connected to the terminating end portion of a corresponding one of the mating contacts such that the array of circuit contacts electrically connects the array of mating contacts to the printed circuit. | 2013-02-14 |
| 20130040504 | CONNECTOR WITH ELECTRIC COMPONENT - A connector (C) with a capacitor ( | 2013-02-14 |
| 20130040505 | ELECTRICAL CONNECTOR AND ELECTRICAL CONNECTOR ASSEMBLY - An electrical connector in which a single connector is directly mated with a coupling projection part provided in a product chassis constituting an electronic device; contact parts of electrically-conductive contacts are brought into contact with both contact parts of a wiring pattern exposed from upper and lower both surfaces of the coupling projection part; electrical connection of the signal transmission medium is established with a simple configuration without intermediation of a conventionally-used circuit board or an electrical connector serving as a mating counterpart mounted on the circuit board; pressing force of the electrically-conductive contacts is cancelled out and approximately uniformly applied without unevenness; the protruding distance of the mating structure of the electrical connector is reduced to reduce the thickness thereof; and reversed mating is enabled to increase degree of freedom in the extending direction of a terminal part of the signal transmission medium. | 2013-02-14 |
| 20130040506 | Electrical contact for plug-in connections - In an electrical contact for plug-in connections, in particular for the direct contacting of contact surfaces of a circuit board, the contact having a contact housing which includes an inwardly deflectable primary lance, which outwardly projects beyond the contact housing, counter to the insertion direction, for retaining the contact inserted into a contact chamber of a mating plug, the primary lance has a free end which is offset inwardly relative to its outwardly projecting lance section and extends counter to the insertion direction, which free lance end is outwardly overlapped by a housing stop of the contact housing. | 2013-02-14 |
| 20130040507 | ELECTRICAL PLUG-IN CONTACT - An electrical plug-in contact, having a first region for electrical contact with an electrical connection and a second region for electrical contact with an electrical conductor, wherein the two regions are connected to each therein an electrically conductive manner. To provide a plug-in contact that has a simpler design and is more reliable in use, the second region is designed as a plug-in sleeve, in particular a cylindrical plug-in sleeve, which, in the contact region thereof with the electrical conductor, has an elongated hole parallel to the longitudinal axis of the plug-in sleeve, and a longitudinal slot located diametrically opposite of the elongated hole. Furthermore, a system is provided, consisting of an electrical plug-in contact and an electrical conductor, in particular a current bar, wherein an angular, in particular quadrangular, hole for receiving the, in particular cylindrical, plug-in sleeve in the inserted position thereof is formed in the electrical conductor. | 2013-02-14 |
| 20130040508 | CURVED SPRING BEAM HAVING COINED INDENTATIONS - An electrical socket design for a pin and socket connector is provided that increases the spring rate of a tine of the socket by displacing material away from a neutral plane of the tine, which increases the tine's moment of inertia. Increasing the moment of inertia increases the spring rate and thereby increases the contact force of the tine on the pin. The material can be readily displaced by a coining process, which can be implemented in a manufacturing process with minimal changes and can also readily accommodate design adjustments. | 2013-02-14 |
| 20130040509 | CRIMP TERMINAL, CONNECTION STRUCTURAL BODY AND METHOD FOR PRODUCING THE CRIMP TERMINAL - Has an object of providing a crimp terminal, a connection structural body, and a method for producing the crimp terminal, which has a conducting function with certainty, with no galvanic corrosion occurring due to an electric wire and the terminal formed of different metal materials. A crimp terminal | 2013-02-14 |
| 20130040510 | CONNECTOR - A connector includes: a first contact part; a second contact part; and an elastic deformable part provided between the first and second contact parts, the elastic deformable part comprising: at least one rounding part which rounds less than one circle around a phantom line interconnecting a base position of the first contact part and a base position of the second contact part; a connecting part which is extended from one end of the rounding part to the first contact part; and a connecting part which is extended from the other end of the rounding part to the second contact part. | 2013-02-14 |
| 20130040511 | CONNECTION STRUCTURAL BODY - In a connection structural body, an aluminum electric wire tip part and a crimp terminal are connected to each other. The aluminum electric wire tip part is an exposed tip part of an insulated wire including an aluminum core wire and an insulating cover for covering the aluminum core wire. The crimp terminal includes a wire barrel section for pressure-bonding and thus connecting the aluminum electric wire tip part and is formed of a metal material having a higher potential than that of the aluminum core wire. The aluminum electric wire tip part is covered with a cover solder and/or a cover resin, pressure-bonded, and connected to the wire barrel section such that the aluminum electric wire tip part is covered with the cover and/or the cover resins, with no gap, from an insulating cover tip part to a rear end portion of the wire barrel section. | 2013-02-14 |
| 20130040512 | TERMINAL WITH COMPLIANT BARB - An electrically conductive terminal is configured for insertion into an opening in a substrate. The terminal includes a body having proximal and distal ends. The distal end is configured for insertion into the opening. The body includes a wall having an outer surface and a compliant barb that includes a base portion, an apex portion, a barb inner surface, and a barb outer surface. The base portion is disposed on the outer surface of the wall, along the body. The apex portion extends from the base portion in a direction from the distal end to the proximal end at an angle from the wall outer surface. The apex portion is located between the base and the proximal end. The barb inner surface faces the wall outer surface. The barb inner surface and the barb outer surface converge to the apex so that the cross-sectional width of the barb is non-uniform. | 2013-02-14 |
| 20130040513 | HYDRAULIC PROPELLER ENHANCEMENT METHOD - The present invention relates to a hydraulic propeller enhancement method for enhancing the propelling force of a hydraulic propeller. The present invention uses a gas release outlet in the propeller at the area where the high-speed axial flow of water passes for guiding in a gas by means of a negative pressure subject to Bernoulli's principle. Thus, subject to Bernoulli's principle, gas compressible characteristic and Boyle's law and the arrangement of the contracted end piece of the nozzle to work as an air compressor for compressing air bubbles, the invention uses one single gas guide device and a negative pressure suction force to guide in air bubbles to enhance the propelling force of the hydraulic propeller. | 2013-02-14 |
| 20130040514 | THRUSTER UNIT AND METHOD FOR INSTALLATION OF A THRUSTER UNIT - In a thruster for a vessel including a hull, the thruster comprises at least one tunnel element and at least one thruster unit. The tunnel element includes at least a part of a through tunnel in the hull when arranged in the hull. The at least one thruster unit and the at least one tunnel element include cooperating fastening devices for detachably fixing the at least one thruster unit in the at least one tunnel element such that the at least one thruster unit is configured to be passed through the tunnel and mounted to the at least one tunnel element, or demounted from the at least one tunnel element and passed out of the tunnel. A method for mounting and demounting a thruster in a tunnel element includes a tunnel element arranged in the vessel of a hull. | 2013-02-14 |
| 20130040515 | COMPLIANT OCEAN WAVE MITIGATION DEVICE AND METHOD TO ALLOW UNDERWATER SOUND DETECTION WITH OCEANOGRAPHIC BUOY MOORINGS - The systems and methods described herein relate to a device which enables oceanographic surface buoy mooring systems to detect and monitor underwater noise at most sea state and weather conditions. In particular, the systems and methods described herein provide mooring systems that can support a hydrophone or other underwater listening devices connected to a surface buoy located at a deep sea position. As will be more fully described below, the mooring includes an expandable tether cable/hose that reduces noise generated underwater when the buoy moves in response to wave and weather. | 2013-02-14 |
| 20130040516 | TRANSPARENT ELECTRODE BASED ON COMBINATION OF TRANSPARENT CONDUCTIVE OXIDES, METALS AND OXIDES - The invention disclosure relates to an electrode comprising a transparent conductive oxide (TCO) and an ultra thin metal film (UTMF) deposited on the TCO. In addition the UTMF is oxidized or covered by an oxide layer. In this way the underlying TCO is protected/compatible to other materials and the loss of transparency is reduced. | 2013-02-14 |
| 20130040517 | RESIN COMPOSITION FOR PRINTED CIRCUIT BOARD - A resin composition is provided which comprises a polyimide resin, a thermosetting resin, and a filler, the polyimide resin containing a first repeat unit represented by formula (I) and a second repeat unit represented by formula (II) or (III), wherein when the second repeat unit is represented by formula (II), the ratio of the second repeat unit to the polyimide resin is between 5 and 35 mol %, and when the second repeat unit is represented by formula (III), the ratio of the second repeat unit to the polyimide resin is between 5 and 80 mol %. | 2013-02-14 |
| 20130040518 | METHOD FOR FUNCTIONALIZING A SOLID MATERIAL SURFACE WITH SELF ASSEMBLING OR SELF AGGREGATING CYCLODEXTRINS AND PRODUCTS THEREOF - The present invention relates to a method for functionalizing a solid material surface with self assembling or self aggregating cyclodextrins, said method comprising the steps of: providing an adsorption solution comprising at least one modified cyclodextrins and at least one solvent; and contacting a solid material surface with the adsorption solution. | 2013-02-14 |
| 20130040519 | PHOTOCHEMICAL CROSS-LINKABLE POLYMERS, METHODS OF MAKING PHOTOCHEMICAL CROSS-LINKABLE POLYMERS, METHODS OF USING PHOTOCHEMICAL CROSS-LINKABLE POLYMERS, AND METHODS OF MAKING ARTICLES CONTAINING PHOTOCHEMICAL CROSS-LINKABLE POLYMERS - Polymer compositions, methods of making polymer compositions, structures having the polymer composition covalently bonded to the surface of the structure, methods of attaching the polymer to the surface of the structure, methods of decreasing the amount of microorganisms formed on a structure, and the like, are disclosed. | 2013-02-14 |
| 20130040520 | CARBONIZED ASPHALTENE-BASED CARBON-CARBON FIBER COMPOSITES - A method of making a carbon binder-reinforced carbon fiber composite is provided using carbonized asphaltenes as the carbon binder. Combinations of carbon fiber and asphaltenes are also provided, along with the resulting composites and articles of manufacture. | 2013-02-14 |
| 20130040521 | Highly Oriented and Crystalline Thermoplastic Filaments and Method of Making Same - A melt-spun highly oriented and crystalline thermoplastic filament or fiber having a tenacity of at least about 10 g/d, an elongation less than about 15-%, and a modulus of at least about 130 g/d. A method of making highly oriented and crystalline thermoplastic filaments has been developed that comprises extruding a thermoplastic polymer to form at least one molten filament. The at least one molten filament is introduced into a horizontal liquid isothermal bath. The bath is maintained at a temperature between the glass transition temperature and the melting temperature of the thermoplastic polymer. The bath increases the tension along the molten filament to form at least one partially oriented and low crystalline filament. The partially oriented filament is drawn to form the highly oriented and crystalline filament. | 2013-02-14 |
| 20130040522 | POLYESTER FIBER AND PREPARATION METHOD FOR THE SAME - The present invention relates to a polyester fiber applicable to an airbag fabric, and more particularly to a polyester fiber, a preparation method for the polyester fiber, and an airbag fabric prepared from the polyester fiber, where the polyester fiber has an elongation of 0.8 to 2.0% under a tensile strength of 1.0 g/d at the room temperature, and an additional elongation of 1.5 to 5% under a tensile strength of 8.8 g/d to the maximum. | 2013-02-14 |
