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07th week of 2013 patent applcation highlights part 15
Patent application numberTitlePublished
20130037923SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME - There are provided a semiconductor package capable including an electromagnetic wave shielding structure having excellent electromagnetic interference (EMI) shielding characteristics while protecting individual elements therein from impacts, and a method of manufacturing the same. The semiconductor package includes: a substrate having ground electrodes formed on an upper surface thereof; at least one electronic component mounted on the upper surface of the substrate; an underfill resin filled in a space between the electronic component and the substrate; and a conductive shield part formed along an outer surface formed by the electronic component and the underfill resin and electrically connected to the ground electrodes.2013-02-14
20130037924ANTENNA SWITCH MODULES AND METHODS OF MAKING THE SAME - Antenna switch modules and methods of making the same are provided. In certain implementations, an antenna switch module includes a package substrate, an integrated filter, and a silicon on insulator (SOI) die attached to the package substrate. The SOI die includes a capacitor configured to operate in the integrated filter and a multi throw switch for selecting amongst the RF signal paths. In some implementations, a surface mount inductor is attached to the package substrate adjacent the SOI die and is configured to operate in the integrated filter with the capacitor. In certain implementations, the inductor is formed from a conductive layer of the package substrate disposed beneath a layer of the package substrate used to attach the SOI die.2013-02-14
20130037925AREA ARRAY QFN - A microelectronic assembly can include a microelectronic element and a lead frame having a first unit and a second unit overlying the first unit and assembled therewith. The first unit can have a first metal layer comprising a portion of the thickness of the lead frame and including terminals and first conductive elements extending away therefrom. The second unit can have a second metal layer comprising a portion of the thickness of the lead frame and including bond pads and second conductive elements extending away therefrom. The first and second units each can have an encapsulation supporting at least portions of the respective first and second conductive elements. At least some of the second conductive elements can overlie portions of corresponding ones of the first conductive elements and can be joined thereto. The microelectronic element can have contacts electrically connected with the bond pads of the lead frame.2013-02-14
20130037926Lead Assembly for a Flip-Chip Power Switch - A power switch assembly includes a flip-chip type integrated circuit chip and a lead-frame with a plurality of spaced apart parallel lead sections. The flip-chip type integrated circuit chip includes a distributed transistor, and first and second pluralities of flip-chip interconnects connected to source and drain regions, respectively. The first and second lead sections at least partially overlap along the first axis. Each of the plurality of lead sections includes a contact portion and an extended portion extending laterally from the contact portion. The extended portions of the first and second lead section extend from the contact portion in opposite directions. The first side of the first and second lead section contacts at least two of the first and plurality of flip-chip interconnects, respectively. The second side of the first and second lead are configured to contact a first and second contact area on a printed circuit board, respectively.2013-02-14
20130037927LEAD CARRIER WITH MULTI-MATERIAL PRINT FORMED PACKAGE COMPONENTS - A lead carrier provides support for a semiconductor device during manufacture. The lead carrier includes a temporary support member with multiple package sites. Each site includes a die attach pad surrounded by terminal pads. The pads are formed of multiple materials including a lower layer and a body portion. An upper layer can also be provided over the body portion. A chip is mounted upon the die pad and wire bonds extend from the chip to the terminal pads. These parts are all encapsulated within a mold compound. The body portion is preferably formed by providing a matrix of metal powder and a suspension medium at locations where the pads are to be located. Heat is applied to disperse the suspension medium and sinter the metal powder to form the body portion. After encapsulation the temporary support member can be peeled away and the package sites isolated from each other.2013-02-14
20130037928SEMICONDUCTOR PACKAGE AND SYSTEM - A semiconductor package includes a package board, a pellet provided over the package board, and a protection member covering the package board and the pellet and including a hole penetrating the protection member.2013-02-14
20130037929STACKABLE WAFER LEVEL PACKAGES AND RELATED METHODS - The present semiconductor device packages include a die, a redistribution layer and a plurality of conductive pillars electrically connected to the redistribution layer. A molding compound partially encapsulates the die and the pillars. A plurality of interconnect patterns on the molding compound are electrically connected to the pillars. The interconnect patterns provide electrical connections for a second, stacked semiconductor package.2013-02-14
20130037930SEMICONDUCTOR CHIP AND SEMICONDUCTOR PACKAGE HAVING THE SAME - A semiconductor chip includes a body part having a first surface and a second surface facing away from the first surface, and an opening passing from the first surface to the second surface of the body part.2013-02-14
20130037931SEMICONDUCTOR PACKAGE WITH A HEAT SPREADER AND METHOD OF MAKING - An apparatus and method of forming a semiconductor package includes having and applying, respectively, a thermal interface material on a semiconductor die. The semiconductor die is included on a die assembly. The semiconductor die is installed in a heat spreader. The heat spreader is at least partially filled with mold compound and the semiconductor die is at least partially immersed in the mold compound once the die assembly is mounted on the heat spreader. The mold compound is then cured.2013-02-14
20130037932Flange for Semiconductor Die - A semiconductor package includes a curved body and a plurality of semiconductor die. The curved body includes first and second opposing end regions and an intermediate center region. The curved body has a first inflection point at the center region, a second inflection point at the first end region and a third inflection point at the second end region. The center region has a convex curvature with a minimal extremum at the first inflection point, the first end region has a concave curvature with a maximal extremum at the second inflection point and the second end region has a concave curvature with a maximal extremum at the third inflection point. The plurality of semiconductor die are attached to an upper surface of the curved body between the maximal extrema.2013-02-14
20130037933SEMICONDUCTOR PACKAGE WITH UNDER BUMP METALLIZATION ROUTING - A semiconductor package includes a semiconductor substrate a semiconductor substrate having source and drain regions formed therein, an intermediate routing structure to provide electrical interconnects to the source and drain regions, a dielectric layer formed over the intermediate routing structure, and an under-bump-metallization (UBM) stack. The intermediate routing structure includes an outermost conductive layer, and the dielectric layer has an opening positioned over a portion of the intermediate layer routing structure. The UBM stack includes a conductive base layer formed over the dielectric layer and electrically connected to the outermost conductive layer through the opening, and a thick conductive layer formed on the base layer. A conductive bump is positioned on the UBM stack and laterally spaced from the opening.2013-02-14
20130037934INTEGRATED CIRCUIT CHIP WITH REDUCED IR DROP - An integrated circuit chip includes a power/ground interconnection network in a topmost metal layer over a semiconductor substrate and at least a bump pad on/over the power/ground interconnection network. The power/ground mesh interconnection network includes a first power/ground line connected to the bump pad and extending along a first direction, and a connection portion connected to the bump pad and extending along a second direction.2013-02-14
20130037935WAFER LEVEL PACKAGE STRUCTURE AND THE FABRICATION METHOD THEREOF - The present invention relates to a package for semiconductor device and the fabrication method for integrally encapsulating a whole semiconductor chip within a molding compound. In the semicondcutor device package, bonding pads distributed on the top of the chip are redistributed into an array of redistributed bonding pads located in an dielectric layer by utilizing the redistribution technique. The electrodes or signal terminals on the top of the semiconductor chip are connected to an electrode metal segment on the bottom of the chip by conductive materials filled in through holes formed in a silicon substrate of a semiconductor wafer. Furthermore, the top molding portion and the bottom molding portion seal the semiconductor chip completely, thus providing optimum mechanical and electrical protections.2013-02-14
20130037936Semiconductor Device and Method of Forming a Stackable Semiconductor Package with Vertically-Oriented Discrete Electrical Devices as Interconnect Structures - A semiconductor device has a substrate and first semiconductor die to the substrate. A plurality of vertically-oriented discrete electrical devices, such as a capacitor, inductor, resistor, diode, or transistor, is mounted over the substrate in proximity to the first semiconductor die. A first terminal of the discrete electrical devices is connected to the substrate. A plurality of bumps is formed over the substrate adjacent to the discrete electrical devices. An encapsulant is deposited over and between the first semiconductor die and substrate. A portion of the bumps and a second terminal of the discrete electrical devices is exposed from the encapsulant. An interconnect structure is formed over a surface of the substrate opposite the first semiconductor die. The semiconductor devices are stackable and electrically connected through the substrate, discrete electrical devices, and bumps. A heat spreader or second semiconductor die can be disposed between the stacked semiconductor devices.2013-02-14
20130037937BUMP PAD STRUCTURE - A bump pad structure for a semiconductor package is disclosed. A bump pad structure includes a conductive pad disposed on an insulating layer. A ring-shaped conductive layer is embedded in the insulating layer and is substantially under and along an edge of the conductive pad. At least one conductive via plug is embedded in the insulating layer and between the conductive pad and the ring-shaped conductive layer, such that the conductive pad is electrically connected to the ring-shaped conductive layer.2013-02-14
20130037938EMBEDDED PACKAGE AND METHOD FOR MANUFACTURING THE SAME - An embedded package includes a semiconductor chip divided into a cell region and a peripheral region, having a first surface and a second surface which faces away from the first surface, and including an integrated circuit which is formed in the cell region on the first surface, a bonding pad which is formed in the peripheral region on the first surface and a bump which is formed over the bonding pad; a core layer attached to the second surface of the semiconductor chip; an insulation component formed over the core layer including the semiconductor chip and having an opening which exposes the bump; and a circuit wiring line formed over the insulation component and the bump and electrically connected to is the bump, wherein the insulation component formed in the cell region has a thickness larger than a height of the bump.2013-02-14
20130037939SEMICONDUCTOR PACKAGE AND STACK-TYPE SEMICONDUCTOR PACKAGE HAVING THE SAME - A semiconductor package includes a semiconductor chip having a first surface, a second surface which faces away from the first surface, and through holes which pass through the first surface and the second surface; a dielectric layer formed on one or more of the first surface and the second surface and formed with grooves around the through holes on a fourth surface of the dielectric layer facing away from a third surface of the dielectric layer which is attached to the semiconductor chip; through-silicon vias filling the through holes; and bumps formed on the through-silicon vias and on portions of the dielectric layer around the through-silicon vias and filling the grooves.2013-02-14
20130037940METHOD FOR INHIBITING GROWTH OF INTERMETALLIC COMPOUNDS - The present invention relates to a method for inhibiting growth of intermetallic compounds, comprising the steps of: (i) preparing a substrate element including a substrate on which at least one layer of metal pad is deposited, wherein at least one thin layer of solder is deposited onto the layer of metal pad, and then carry out reflowing process; and (ii) further depositing a bump of solder with an appropriate thickness on the substrate element, characterized in that a thin intermetallic compound is formed by the reaction of the thin solder layer and the metal in the metal pad after appropriate heat treatment of the thin solder layer. In the present invention, the formation of a thin intermetallic compound is able to slow the growth of the intermetallic compound and to prevent the transformation of the intermetallic compounds.2013-02-14
20130037941SEMICONDUCTOR DEVICE REDUCING RISKS OF A WIRE SHORT-CIRCUIT AND A WIRE FLOW - A semiconductor device includes a wiring substrate having first and second connection pads on a main surface thereof, a first semiconductor chip having first electrode pads, a second semiconductor chip having second electrode pads each of which has a size smaller than that of each of the first electrode pads, first wires connecting the first electrode pads with the first connection pads, and second wires connecting the second electrode pads with the second connection pads. The second wires have wide width parts at first ends. The first electrode pads are larger than the wide width parts while the second electrode pads are smaller than the wide width parts. The wide width parts are connected the second connection pads and the second wires have second ends connected to the second electrode pads via bump electrodes which are smaller than the second electrode pads.2013-02-14
20130037942SEMICONDUCTOR CHIPS HAVING A DUAL-LAYERED STRUCTURE, PACKAGES HAVING THE SAME, AND METHODS OF FABRICATING THE SEMICONDUCTOR CHIPS AND THE PACKAGES - Dual-layered structural semiconductor chips are provided. The semiconductor chip includes a first semiconductor chip and a second semiconductor chip bonded to the first semiconductor chip. The first semiconductor chip includes a first substrate having a first bottom surface. The second semiconductor chip includes a second substrate having a second bottom surface. The first bottom surface directly contacts the second bottom surface. The related packages and the related methods are also provided.2013-02-14
20130037943SEMICONDUCTOR DEVICE, SEMICONDUCTOR PACKAGE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGE - A semiconductor device includes a semiconductor substrate, which includes a through hole that extends through the semiconductor substrate. An insulative layer includes a first surface, an opposite second surface covering the semiconductor substrate, and an opening aligned with the through hole. An insulative film covers an inner wall surface of the semiconductor substrate and the opening. A through electrode is formed in the through hole and the opening inward from the insulative film. The through electrode includes a first end surface that forms a pad exposed from the first surface of the insulative layer. The first end surface of the through electrode is flush with the first surface of the insulative layer.2013-02-14
20130037944Chip Stack Packages Having Aligned Through Silicon Vias of Different Areas - A chip stack package includes a first semiconductor chip, a second semiconductor chip and a third semiconductor chip. The first semiconductor chip includes a first through silicon via that extends through the first semiconductor chip. The second semiconductor chip is stacked on the first semiconductor chip, and includes a second through silicon via that extends through the second semiconductor chip. The second through silicon via is disposed on the first through silicon via, and has a cross-sectional area smaller than that of the first through silicon via. The third semiconductor chip is stacked on the first semiconductor chip, and includes a third through silicon via that extends through the third semiconductor chip. The third through silicon via is disposed on the second through silicon via, and has a cross-sectional area smaller than that of the second through silicon via.2013-02-14
20130037945SEMICONDUCTOR DEVICE - Provided is a semiconductor device in which misalignment between a semiconductor die and a substrate (e.g., a circuit board) can be prevented or substantially reduced when the semiconductor die is attached to the circuit board. In a non-limiting example, the semiconductor device includes: a semiconductor die comprising at least one bump; and a circuit board comprising at least one circuit pattern to which the bump is electrically connected. In a non-limiting example, the circuit board comprises: an insulation layer comprising a center region and peripheral regions around the center region; a plurality of center circuit patterns formed in the center region of the insulation layer; and a plurality of peripheral circuit patterns formed in the peripheral regions of the insulation layer. The center circuit patterns may be formed wider than the peripheral circuit patterns, formed in a zigzag pattern, and/or may be formed in a crossed shape.2013-02-14
20130037946SEMICONDUCTOR CHIP INCLUDING BUMP HAVING BARRIER LAYER, AND MANUFACTURING METHOD THEREOF - A semiconductor chip includes a first substrate including a first surface and a second surface, a through-via plug passing through the first substrate, and a first conduction layer connected to an end of the through-via plug on the first surface, and a first bump including a first barrier layer on the first conduction layer, and a first solder layer for connecting the first substrate and a second substrate on the first barrier layer, and the first barrier layer includes a barrier material for preventing diffusion of a conductive material of the first conduction layer into the first solder layer.2013-02-14
20130037947SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Even when a stiffener is omitted, the semiconductor device which can prevent the generation of twist and distortion of a wiring substrate is obtained.2013-02-14
20130037948SEMICONDUCTOR DEVICE HAVING A THROUGH-SUBSTRATE VIA - Semiconductor devices are described that have a through-substrate via formed therein. In one or more implementations, the semiconductor devices include a top wafer and a bottom wafer bonded together with a patterned adhesive material. The top wafer and the bottom wafer include one or more integrated circuits formed therein. The integrated circuits are connected to one or more conductive layers deployed over the surfaces of the top and bottom wafers. A via is formed through the top wafer and the patterned adhesive material so that an electrical interconnection can be formed between the integrated circuits formed in the top wafer and the integrated circuits formed in the bottom wafer. The via includes a conductive material that furnishes the electrical interconnection between the top and bottom wafers.2013-02-14
20130037949SEMICONDUCTOR ASSEMBLIES WITH MULTI-LEVEL SUBSTRATES AND ASSOCIATED METHODS OF MANUFACTURING - Various embodiments of semiconductor assemblies with multi-level substrates and associated methods of manufacturing are described below. In one embodiment, a substrate for carrying a semiconductor die includes a first routing level, a second routing level, and a conductive via between the first and second routing levels. The conductive via has a first end proximate the first routing level and a second end proximate the second routing level. The first routing level includes a terminal and a first trace between the terminal and the first end of the conductive via. The second routing level includes a second trace between the second end of the conductive via and a ball site. The terminal of the first routing level and the ball site of the second routing level are both accessible for electrical connections from the same side of the substrate.2013-02-14
20130037950Multi-Chip Wafer Level Package - A multi-chip wafer level package comprises three stacked semiconductor dies. A first semiconductor die is embedded in a first photo-sensitive material layer. A second semiconductor die is stacked on top of the first semiconductor die wherein the second semiconductor die is face-to-face coupled to the first semiconductor die. A third semiconductor die is back-to-back attached to the second semiconductor die. Both the second semiconductor die and the third semiconductor die are embedded in a second photo-sensitive material layer. The multi-chip wafer level package further comprises a plurality of through assembly vias formed in the first photo-sensitive material layer and the second photo-sensitive material layer.2013-02-14
20130037951SEMICONDUCTOR PACKAGE STRUCTURE WITH LOW INDUCTANCE - A semiconductor package structure includes: a substrate comprising a plurality of power supply balls on a first surface of the substrate, a first metal conductor on a second surface of the substrate and at least one via coupling a power supply ball to the first metal conductor of the substrate; a die, comprising a plurality of bond pads on a first surface of the die, a first metal conductor on a second surface of the die and at least one via coupling a bond pad to the first metal conductor of the die; and a plurality of first wire bonds for coupling the first metal conductor of the substrate to the first metal conductor of the die.2013-02-14
20130037952SEMICONDUCTOR PACKAGE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor package includes a substrate, a driving chip module including a plurality of driving chips stacked on the substrate, and a molding part formed on the substrate by compressing a sheet type molding member in a semi-cured (B-stage) state to cover the driving chip module.2013-02-14
20130037953THROUGH SILICON VIA STRUCTURE AND MANUFACTURING METHOD THEREOF - A manufacturing method for a through silicon via structure includes the following steps. First, a substrate is provided, and a through silicon hole is formed in the substrate. An outer plasma enhanced oxide layer is formed on the surface of the through silicon hole, and then a liner layer is formed on the surface of the outer plasma enhanced oxide layer. An inner plasma enhanced oxide layer is formed on the surface of the liner layer. Finally, a conductor is formed on the surface of the inner plasma enhanced oxide layer to completely fill the through silicon hole.2013-02-14
20130037954Metallization and Its Use In, In Particular, an IGBT or a Diode - A vertical power semiconductor component includes a semiconductor chip and at least one layer serving as a heat sink. The semiconductor chip has a top main surface at a front side of the semiconductor chip, wherein the top main surface is in a heat exchanging relationship with the at least one layer serving as the heat sink. This layer has a layer thickness of at least 15 μm and has a specific heat capacity per volume that is at least a factor of 1.3 higher than the specific heat capacity per volume of the semiconductor chip. The component further includes metallizations between the at least one layer and the top main surface.2013-02-14
20130037955SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE HAVING THE SUBSTRATE, AND MANUFACTURING METHOD THEREOF - A substrate for a semiconductor device is provided. The substrate includes a first metal line, a second metal line, a metal support part, a first insulating part, and a second insulating part. The first metal line is electrically connected to a first electrode of the semiconductor device. The second metal line is electrically connected to a second electrode of the semiconductor device and spaced apart from the first metal line. The metal support part is disposed between the first metal line and the second metal line. The first insulating part is disposed between the first metal line and the metal support part and configured to electrically insulate the first metal line from the metal support part. The second insulating part is disposed between the second metal line and the metal support part and configured to electrically insulate the second metal line from the metal support part.2013-02-14
20130037956THIN FILM STRUCTURE FOR HIGH DENSITY INDUCTORS AND REDISTRIBUTION IN WAFER LEVEL PACKAGING - Disclosed is a package that includes a wafer substrate and a metal stack seed layer. The metal stack seed layer includes a titanium thin film outer layer. A resist layer is provided in contact with the titanium thin film outer layer of the metal stack seed layer, the resist layer forming circuitry. A method for manufacturing a package is further disclosed. A metal stack seed layer having a titanium thin film outer layer is formed. A resist layer is formed so as to be in contact with the titanium thin film outer layer of the metal stack seed layer, and circuitry is formed from the resist layer.2013-02-14
20130037957FLUX COMPOSITION, PROCESS FOR PRODUCING ELECTRICALLY CONNECTED STRUCTURES, ELECTRICALLY CONNECTED STRUCTURE, AND SEMICONDUCTOR DEVICE - A flux composition includes an alditol (A) and a polymer (B) which has a repeating structural unit represented by Formula (1):2013-02-14
20130037958CMOS Image Sensor and Method for Forming the Same - An integrated circuit structure includes an interconnect structure that includes a plurality of metal layers, wherein the interconnect structure is under a semiconductor substrate. A metal pad is formed in one of the plurality of metal layers. A dielectric pad extends from a bottom surface of the semiconductor substrate up into the semiconductor substrate. An opening extends from a top surface of the semiconductor substrate down to penetrate through the semiconductor substrate and the dielectric pad. An edge of the semiconductor substrate in the opening is vertically aligned to an edge of the dielectric pad in the opening. The opening stops on a top surface of the metal pad. A dielectric spacer is disposed in the opening, wherein the dielectric spacer is formed on the edge of the semiconductor substrate and the edge of the dielectric pad.2013-02-14
20130037959METHODS OF FORMING BONDED SEMICONDUCTOR STRUCTURES INCLUDING INTERCONNECT LAYERS HAVING ONE OR MORE OF ELECTRICAL, OPTICAL, AND FLUIDIC INTERCONNECTS THEREIN, AND BONDED SEMICONDUCTOR STRUCTURES FORMED USING SUCH METHODS - Methods of forming bonded semiconductor structures include providing a substrate structure including a relatively thinner layer of material on a thicker substrate body, and forming a plurality of through wafer interconnects through the layer of material. A first semiconductor structure may be bonded over the thin layer of material, and at least one conductive feature of the first semiconductor structure may be electrically coupled with at least one of the through wafer interconnects. A transferred layer of material may be provided over the first semiconductor structure on a side thereof opposite the first substrate structure, and at least one of an electrical interconnect, an optical interconnect, and a fluidic interconnect may be formed in the transferred layer of material. A second semiconductor structure may be provided over the transferred layer of material on a side thereof opposite the first semiconductor structure. Bonded semiconductor structures are fabricated using such methods.2013-02-14
20130037960METHODS OF FORMING BONDED SEMICONDUCTOR STRUCTURES IN 3D INTEGRATION PROCESSES USING RECOVERABLE SUBSTRATES, AND BONDED SEMICONDUCTOR STRUCTURES FORMED BY SUCH METHODS - Methods of forming bonded semiconductor structures include forming through wafer interconnects through a layer of material of a first substrate structure, bonding one or more semiconductor structures over the layer of material, and electrically coupling the semiconductor structures with the through wafer interconnects. A second substrate structure may be bonded over the processed semiconductor structures on a side thereof opposite the first substrate structure. A portion of the first substrate structure then may be removed, leaving the layer of material with the through wafer interconnects therein attached to the processed semiconductor structures. At least one through wafer interconnects then may be electrically coupled to a conductive feature of another structure, after which the second substrate structure may be removed. Bonded semiconductor structures are formed using such methods.2013-02-14
20130037961SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device that may prevent an unexposed substrate and generation of bowing profile during a process for forming an open region having a high aspect ratio, and a method for fabricating the semiconductor device. The semiconductor device includes a first material layer formed over a substrate, an open region formed in the first material layer that exposes the first material layer, a second material layer formed on sidewalls of the open region, wherein the second material layer is a compound material including an element of the first material layer, and a conductive layer formed inside the open region.2013-02-14
20130037962WAFER LEVEL PACKAGING STRUCTURE WITH LARGE CONTACT AREA AND PREPARATION METHOD THEREOF - A method to provide a wafer level package with increasing contact pad area comprising the steps of forming a first packaging layer on wafer top surface, grinding the wafer back surface and etch through holes, depositing a metal to fill the through holes and covering wafer backside, cutting through the wafer from wafer backside forming a plurality of grooves separating each chip then depositing a second packaging layer filling the grooves and covering the wafer back metal, reducing the first packaging layer thickness to expose the second packaging layer filling the grooves and forming a plurality of contact pads overlaying the first packaging layer thereafter cutting through the second packaging layer in the grooves to form individual package.2013-02-14
20130037963CONDUCTIVE ROUTINGS IN INTEGRATED CIRCUITS USING UNDER BUMP METALLIZATION - An integrated circuit structure includes a first conductive layer and an under bump metallization layer over the first conductive layer. The first conductive layer has a first conductive region and a second conductive region electrically isolated from the first conductive region. The under bump metallization layer has a first conductive area and a second conductive area electrically isolated from the first conductive area, the first conductive area substantially located over the first conductive region and the second conductive area substantially located over the second conductive region. At least one of the first conductive area or the first conductive region includes a first protrusion extending toward the second conductive area or second conductive region, respectively. Conductive vias connect the first conductive region to the second conductive area and connect the second conductive region to the first conductive area, and the vias include at least one via connected to the first protrusion.2013-02-14
20130037964SEMICONDUCTOR PACKAGE - A semiconductor package substrate may include a first semiconductor chip, a second semiconductor chip, plugs and interconnection terminals. The second semiconductor chip may be arranged on an upper surface of the first semiconductor chip. The first and second semiconductor chips may have corresponding first regions and corresponding second regions. Conductive plugs may be built only in a first region of the first semiconductor chip. Circuitry of the second semiconductor chip may only be electrically connected to the first semiconductor chip through the conductive connectors corresponding to the first regions of the first and second semiconductor chips.2013-02-14
20130037965THREE-DIMENSIONAL INTEGRATED CIRCUIT, PROCESSOR, SEMICONDUCTOR CHIP, AND MANUFACTURING METHOD OF THREE-DIMENSIONAL INTEGRATED CIRCUIT - One aspect of the present invention is a three-dimensional integrated circuit 2013-02-14
20130037966SEMICONDUCTOR DEVICE DIE BONDING - A semiconductor device includes a semiconductor die having first and second opposing faces and an edge surface. The edge surface has an undercut under the first face. The second face of the semiconductor die is bonded to a bonding surface of a die support member, such as a thermally conductive flag of a lead frame, with a die attach material. A fillet of the bonding material is formed within the undercut.2013-02-14
20130037967SEMICONDUCTOR PACKAGE SUBSTRATE - Disclosed herein is a semiconductor package substrate including a base substrate, a mounting member mounted on an upper portion of the base substrate, and an adhesive layer formed between the base substrate and the mounting member, wherein the adhesive layer includes a thermally conductive adhesive and a ductile adhesive formed at the outer circumference of the thermally conductive adhesive.2013-02-14
20130037968SEMICONDUCTOR APPARATUS AND SUBSTRATE - A semiconductor apparatus includes a semiconductor substrate having a main surface, a multilayer structure circuit formed over the main surface of the semiconductor substrate, a protective wall formed in the same layer as an uppermost layer of the multilayer structure circuit so as to surround the multilayer structure circuit in plan view, and an alignment mark formed in the same layer as the uppermost layer. The alignment mark is formed so as to contact at least part of the protective wall.2013-02-14
20130037969SODA MACHINE PRONGED CLAMP - A pronged clamp apparatus for attaching a soda bottle to a soda machine includes prongs to attach the bottle to the soda machine and a locking mechanism to lock the bottle to the machine at least during carbonation.2013-02-14
20130037970OXYGEN HUMIDIFICATION BOTTLE - An oxygen humidification bottle includes a bottle body, a cap, a duct and a plug. The cap includes an inlet pipe, an outlet pipe and a safety valve, and the duct is coupled to an end of the inlet pipe. When use, the bottle body contains water to a water level H, and dry oxygen is inputted from the inlet pipe into the bottle body, and a bent portion is formed at a section of the duct inside the bottle body and includes a plurality of first holes having a diameter Y, and equidistantly formed with a predetermined interval X apart from one another, and the dry oxygen in the water forms a plurality of air bubbles with a volume expansion rate Z, and the maximum volume is Y*Z*H, and X>Y*Z*H, so that the air bubbles are not in contact with one another to reduce the noise.2013-02-14
20130037971WETTED WALL VENTURI SCRUBBER WITH A 2-STAGE VENTURI THROAT - A venturi scrubber, which avoids clogging in the throat by dust particles, includes a venturi tube, two scrubbing fluid conduits and a scrubbing fluid tank. The venturi tube has a converging section, a diverging section and a throat section which is connected between the converging section and the diverging section. The scrubbing fluid conduit has a top end connected with the bottom end of the converging section of the venturi tube, and the scrubbing fluid conduit is connected with the scrubbing fluid tank. Thereby, scrubbing fluid can be guided directly into the scrubbing fluid tank without passing through the throat section. As a result, the clogging of dust particles on the converging section of the venturi throat can be minimized and the abnormal increase of the pressure drop of the throat can also be avoided.2013-02-14
20130037972Microbubble Therapy Method and Generating Apparatus - A micro bubble generating system includes a shell having a well for retaining a first liquid to immerse an object. A micro bubble apparatus is provide to the shell for providing a pressurized mixture of a second liquid and a dissolved gas into the well so as to create a plurality of micro bubbles within the first liquid for engaging the object.2013-02-14
20130037973VARIABLE PRESSURE DEVICE FOR SOLUBILIZING CARBON DIOXIDE IN A BEVERAGE - A variable pressure device to solubilize carbon dioxide (CO2 ) in a beverage includes: a carbonation tank, a CO2 inlet valve and a venting valve attached to the tank's top part; a discharge valve attached to the tank's bottom part; a booster pump arranged immediately after the discharge valve; a recycling valve arranged immediately after the booster pump, which is connected to a recycling inlet at the top part of the tank; an outlet between the pump and the recycling valve; a level sensor arranged on the lid of the tank; a CO2 inlet valve attached to a tank side near its top part; a modulating valve arranged after the CO2 inlet valve; a Venturi attached immediately after the modulating valve; a control point arranged between the modulating valve and the Venturi; and a beverage inlet valve into the tank attached immediately after the Venturi, which is formed by a pipeline.2013-02-14
20130037974LIQUID MATERIAL VAPORIZER - A liquid material vaporizer comprises a gas-liquid mixing section for mixing a liquid material and a carrier gas to generate a gas-liquid mixture, and a heating type vaporizing section for vaporizing the gas-liquid mixture from the gas-liquid mixing section and exhausting outside the gas generated by the vaporization with assistance of the carrier gas, wherein the vaporizing section is configured with an arrangement of one or a plurality of flat plates formed in a spiral shape by an inwardly twisting path. Such an arrangement provides an excellent liquid material vaporizer capable of, even if a liquid material composed of a plurality of materials having different boiling points is vaporized, preventing a residue from being generated, and performing the vaporization in a preferable manner.2013-02-14
20130037975METHOD AND DEVICE FOR PRODUCING A MICROLENS - This invention relates to a method for producing a microlens with a carrier wafer, in which a lens in one opening of the carrier wafer is molded into the carrier wafer by stamping of the lens and to a corresponding device for executing the method and to a microlens which has been produced using the method. Furthermore the invention relates to a device for producing a microlens as well as a microlens.2013-02-14
20130037976Lens Array Production Method and Laminated Lens Array Production Method - A method of manufacturing a lens array includes the steps of feeding a first curable resin between a first array mold and a plate member and curing the first resin; separating the plate member from the first array mold; feeding a second curable resin between the first array mold and a second array mold while leaving the cured first resin on the first array mold, and curing the second resin; and removing the first array mold and the second array mold.2013-02-14
20130037977Preparation of Lipid Nanoparticles - The present invention provides a process for producing lipid nanoparticles encapsulating therapeutic products, said process comprising: a) providing one or more aqueous solutions in one or more reservoirs; b) providing one or more organic solutions in one or more reservoirs, wherein one or more of the organic solutions contains a lipid and wherein one or more of the aqueous solutions and/or one or more of the organic solutions includes therapeutic products; c) mixing said one or more aqueous solutions with said one or more organic solutions in a first mixing region, wherein said first mixing region is a Multi-Inlet Vortex Mixer (MIVM), wherein said one or more aqueous solutions and said one or more organic solutions are introduced tangentially into a mixing chamber within the MIVM so as to substantially instantaneously produce a lipid nanoparticle solution containing lipid nanoparticles encapsulating therapeutic products.2013-02-14
20130037978METHODS OF MANUFACTURING DIAMOND CAPSULES - Capsules and similar objects are made from materials having diamond (sp2013-02-14
20130037979SYSTEMS AND METHODS FOR FORMING CONCRETE FOOTINGS - An example of a concrete form includes a sleeve with top edge and a bottom portion with a bottom edge generally parallel to the top edge. The bottom portion includes a plurality of bottom severance lines extending from the bottom edge to the top portion, and the top portion including a plurality of top creases extending from the top edge to the bottom portion. The top creases are generally perpendicular to the top and bottom edges. The top creases at least partially define a plurality of top panels around a periphery of the sleeve, and the bottom severance lines at least partially define a plurality of bottom panels configured to flare out when concrete is poured into the sleeve.2013-02-14
20130037980PROCESS FOR PRODUCTION OF MULTILAYERED STRUCTURE - Provided is a method of producing a multilayered structure, comprising the steps of: obtaining a regrind (C) by grinding a multilayered structure (B) having a layer of a resin composition (A), followed by sieving; and obtaining a multilayered structure (F) having a layer of a resin composition (E) made by melt kneading the regrind (C) and a polyolefin (D), wherein the resin composition (A) contains a polyolefin (G), a saponified ethylene-vinyl acetate copolymer (H) having an ethylene content of from 20 to 65 mol % and having a degree of saponification of vinyl acetate units of 96% or more, a saponified ethylene-vinyl acetate copolymer (I) having an ethylene content of from 68 to 98 mol % and having a degree of saponification of vinyl acetate units of 20% or more, and an antistatic agent (J), and a mass ratio (H/I) is from 0.1 to 10. According to this, using a regrind of a multilayered structure having a resin composition layer containing a polyolefin and an EVOH enables to provide a method of producing a multilayered structure that is suppressed in generation and worsening of uneven cloudiness.2013-02-14
20130037981IMPRINT APPARATUS AND ARTICLE MANUFACTURING METHOD - An imprint apparatus that molds an imprint material on a substrate using a mold, and forms a pattern on the substrate, the imprint apparatus includes a mold holding unit configured to hold the mold, which includes a surface including a pattern area, a substrate holding unit configured to hold the substrate, a first acquisition unit configured to acquire information concerning a difference in shape between the pattern area and a shot already formed on the substrate, and a control unit configured to control at least one of the mold holding unit and the substrate holding unit to adjust a spacing between the mold and the substrate, based on the information concerning the difference in shape acquired by the first acquisition unit, in a state where the pattern area and the imprint material are in contact with each other.2013-02-14
20130037982FILTER CASTING NANOSCALE POROUS MATERIALS - A method of producing nanoporous material includes the steps of providing a liquid, providing nanoparticles, producing a slurry of the liquid and the nanoparticles, removing the liquid from the slurry, and producing monolith.2013-02-14
20130037983LABEL FILM FOR BLOW-MOULDING METHOD - The invention relates to a biaxial oriented film with a microporous layer, comprising a propylene polymer and at least one β-nucleating agent the microporosity of which is generated by conversion of β-crystalline polypropylene on drawing the film and the use thereof for the labelling of containers in blow moulding. The Gurley value for the film is 10,000 to 300,000 Gurley.2013-02-14
20130037984METHOD, DEVICE AND A COMPUTER PROGRAM FOR MANUFACTURING A PRE-INSULATED SKELETON FRAMING SEGMENT - A method, a device and a computer program for manufacturing a pre-insulated skeleton framing segment (2013-02-14
20130037985Earth-Boring Bit Parts Including Hybrid Cemented Carbides and Methods of Making the Same - An earth-boring bit part such as, for example, a bit body, roller cone, or mud nozzle includes a hybrid cemented carbide composite. The hybrid cemented carbide includes a cemented carbide dispersed phase, and a cemented carbide continuous phase. A method of manufacture also is disclosed.2013-02-14
20130037986METHOD, SYSTEM AND RESIN SHEET FOR PRODUCING FIBER-REINFORCED MOLDED PARTS IN A MOLDING PRESS - Method, system and resin sheet for producing fiber-reinforced molded parts (SMC) by extrusion in a molding press from a fiber-reinforced resin sheet which is continuously produced in a flat web installation. At least one resin base layer is combined with fibers in a mixing device, is subsequently mixed in a fulling and saturating device, and is finally matured in a thickening device to form a continuous resin sheet, wherein the continuous resin sheet is cut to form cut sheets and is then transferred, either directly or joined in a structure with other cut sheets, by a transfer device to a tool of a molding press in which it is then pressed to form a fiber-reinforced molded part. Reinforcements are applied on at least one resin base layer for forming a reinforcement zone which is delimited in length and/or width relative to at least one resin base layer before joining the resin base layers.2013-02-14
20130037987Profiled Extrusion Replication - A profiled extrusion replication process is disclosed that includes steps of (a) extruding a molten material through an extrusion die having at least one profiled die lip to form a molten extrudate having first and second major extrudate surfaces and having a first structural feature in the first major extrudate surface; (b) bringing the molten extrudate into contact with a tool surface comprising one or more second structural features so as to cause a portion of the first structural feature in the first major extrudate surface to contact the one or more second structural features on the tool surface; and (c) cooling the molten extrudate to provide the structured film. Structured films and apparatus for making structured films are also disclosed.2013-02-14
20130037988STRETCHING APPARATUS AND METHOD OF MANUFACTURING POLYIMIDE FILM USING THE SAME - A stretching apparatus capable of optimally inhibiting neck-in of a film when the film is stretched in an MD (Machine Direction), has an advancing mechanism, a take-in mechanism, and film-holding unit placed at both end portions in a TD (Transverse Direction) of a transfer path of film between the mechanisms. The film-holding unit has a plurality of upper holding rollers placed in parallel at intervals in the MD of the film above the transfer path of film, and a plurality of lower holding rollers placed opposite to upper holding rollers below the transfer path of film such that the plurality of lower holding rollers work together with the plurality of upper holding rollers to sandwich the film vertically between the rollers. Upper holding rollers and lower holding rollers are rotatably supported such that their rotational axes are inclined outward in the TD of film toward a downstream side of the MD of film.2013-02-14
20130037989Waterproofing Membrane - Disclosed is a waterproofing membrane that comprises a carrier sheet, a pressure sensitive adhesive layer on one surface of the carrier sheet, and a protective coating layer on the adhesive layer. The protective coating layer comprises a highly reflective protective coating layer operative to bond to concrete cast against it, particularly one that is produced from an aqueous coating comprising an acrylic emulsion, a filler, and a white pigment. The pigment volume concentration of the filler plus white pigment is greater than or equal to 40% by volume. The protective coating layer protects the membrane against weather exposure, tolerates foot traffic and strongly adheres to concrete cast against it. The protective coating comprises an acrylic polymer with a unique multi-domain morphology (i.e., at least two distinct polymer domains).2013-02-14
20130037990Molding Wafer Chamber - A bottom chase and a top chase of a molding system form a cavity to house a molding carrier and one or more devices. The molding carrier is placed in a desired location defined by a guiding component. The guiding component may be entirely within the cavity, or extend above a surface of the bottom chase and extend over a contacting edge of the top chase and the bottom chase, so that there is a gap between the edge of the top chase and the edge of the molding carrier which are filled by molding materials to cover the edge of the molding carrier. Releasing components may be associated with the top chase and/or the bottom chase, which may be a plurality of tape roller with a releasing film, or a plurality of vacuum holes within the bottom chase, or a plurality of bottom pins with the bottom chase.2013-02-14
20130037991Method Of Manufacturing Antimicrobial Implants Of Polyetheretherketone - Methods of fabricating implantable medical devices, preferably with PEEK, having antimicrobial properties, are disclosed. The antimicrobial effect is produced by incorporating ceramic particles containing antimicrobial metal cations into molten PEEK resin, which is subsequently allowed to cool and set in its final shape achieved by injection molding, cutting and machining or other techniques.2013-02-14
20130037992LASER SCRIBING APPARATUS, SYSTEMS, AND METHODS - Apparatus, systems, and methods for forming a photovoltaic cell from a common layer on a substrate are provided. A first pass is made with a first laser beam over an area on the common layer. The first pass forms a groove in the common layer. The first pass forms within the common layer a first edge and a second edge. The first edge is separated from the second edge by the groove. The groove provides a first level of electrical isolation between the first edge and the second edge. A second pass is made with a second laser beam over approximately the same area on the common layer. The second pass provides a second level of electrical isolation between the first edge and the second edge. The second level of electrical isolation is greater than the first level of electrical isolation.2013-02-14
20130037993COMPUTER NUMERICAL CONTROL (CNC) ADDITIVE MANUFACTURING - An additive manufacturing system and process are described. In one example of the invention, a fiber optic cable connected with an ultraviolet (UV) LED and related lens forms an accumulation tool. The cable is then merged inside a tank filled with liquid resin that is UV-curable. By controlling the on/off state of the UV-LED and the multi-axis motion of the cable, a physical model, having a desired shape, can be built by selectively curing liquid resin into solid.2013-02-14
20130037994Method Of Shortening The Time To Compression Mold A Roofing Shingle Or Tile And Apparatus For Facilitating Same - A method of shortening cycle time required to compression mold shingle or tile is provided, wherein carrier plates are comprised of a surface material and a base, and receive a thermoplastic material, thereon. The roofing material is applied to the carrier plate and the carrier plate is subjected to induction heating, by which its surface material has its temperature raised, without substantially raising the temperature of the carrier plate base, such that the thermoplastic material applied thereto is kept heated in the compression mold. Cooling of the thermoplastic material is by heat transfer from the carrier plate surface material to the carrier plate base, and with both materials having good heat conduction capability. The carrier plate surface material has a high receptivity to being heated by induction heating relative the carrier plate base. The carrier plates are serially delivered through the process, to the compression mold.2013-02-14
20130037995Mold Core for Molding and Controlling the Temperature of a Hollow Structure - A mold core for molding and controlling the temperature of a hollow structure comprises an electrically non-conducting or only slightly conducting inner area and an electrically conducting outer area and two electrical contacts accessible from outside for applying a voltage, wherein the thickness of the outer area is constant or is specifically varied. A method for producing a mold core comprises molding a first body to form an inner electrically non-conducting or only slightly conducting area of the mold core and applying molding material to the first body to form an outer electrically conducting area of the mold core and attaching two electrical contacts accessible from outside for applying a voltage, wherein the thickness of the outer area is constant or specifically varied.2013-02-14
20130037996Device and Method for Blow Moulding Containers - Described are a device and a method for blow moulding containers, whereby the device contains a plurality of blow-moulding stations, each provided with at least one blow mould, whereby these blow-moulding stations are arranged on a carrier, such as a blowing wheel. The blow-moulding stations are supplied with an operating medium by means of a tempering device. To simplify the design and optimize the control, it is proposed to arrange the tempering device on the carrier such that the tempering device runs along with the carrier.2013-02-14
20130037997DEVICE AND METHOD FOR PRODUCING LABELED PLASTIC CONTAINERS - A device for producing labeled plastic containers includes a blowing wheel including a plurality of blow molds each being configured to mold one of the containers. A labeling device is disposed in a region of the blowing wheel and is configured to label the containers while the containers are circulating on the blowing wheel.2013-02-14
20130037998NANOSTRUCTURED DIELECTRIC MATERIALS FOR HIGH ENERGY DENSITY MULTI LAYER CERAMIC CAPACITORS - A high energy density multilayer ceramic capacitor, having at least two electrode layers and at least one substantially dense polycrystalline dielectric layer positioned therebetween. The at polycrystalline dielectric layer has an average grain size of less than about 300 nanometers, a particle size distribution of between about 150 nanometers and about 3 micrometers, and a maximum porosity of about 1 percent. The dielectric layer is selected from the group including TiO2013-02-14
20130037999TEMPERATURE REGULATED VESSEL - Disclosed is a temperature regulated vessel, and method for using the same, having a body configured to melt meltable material received therein, and one or more temperature regulating lines within the body configured to flow a liquid therein for regulating a temperature of the meltable material received in the melting portion. The vessel has a poor or low thermally conductive material on one or more of its parts, such as on the melting portion, on exterior surfaces of the body, and/or surrounding the temperature regulating lines to increase melt temperature of the material. The melting portion can also have indentations in its surface, and low thermally conductive material can be provided in the indentations. The vessel can be used to melt amorphous alloys, for example.2013-02-14
20130038000METHOD OF MIXING GASES FOR A GAS CUTTING TORCH - A method of directing gas flows in a gas torch includes directing a flow of a first gas and a flow of a second gas to a mixer central gas passageway of a mixer and directing the flow of the mixed first and second gases from the mixer to an axial passageway of a tip. The method further includes directing a flow of a third gas to an outer passageway of the tip, directing the flow of the third gas inwardly through at least one intermediate gas passageway, and then directing the flow of the third gas to a tip central gas passageway of the tip. Finally, the flow of the mixed first and second gases and the flow of the third gas are directed distally through a distal portion of the tip.2013-02-14
20130038001Nozzle for Cutting Steel Workpieces and Workpieces Made of Iron Alloys - The invention relates to a nozzle (2013-02-14
20130038002PORTABLE OVEN - A portable thermal oven includes a metal frame and a plurality of terracotta panels disposed inside of the frame and defining an enclosed chamber having a front panel, a rear panel, two opposite side panels, a top panel and a bottom panel. The furnace also includes a terracotta door hingedly disposed in the front panel and including a handle on one side thereof for opening and closing the door. A plurality of gas manifolds and a plurality of gas burners are disposed on each of the two opposite sides of the chamber and a ventilation hatch is disposed in the top panel for exhausting fumes and excess heat. A first and a second gas cylinder and pipes for connecting the gas cylinders to the manifolds for supplying gas and/or air to the manifolds are also provided.2013-02-14
20130038003MIXING DRUM FOR A BLAST FURNACE - Mixing drum (2013-02-14
20130038004GAS SPRING WITH TEMPERATURE COMPENSATION - A gas spring is described, which comprises a first part which defines a cylinder, which comprises a longitudinal axis and which is closed at a first end along the longitudinal axis. The gas spring further comprises a piston, which is arranged to be movable along the longitudinal axis in the cylinder, a piston rod which is connected to the piston and which projects out through a second end of the cylinder, a separating piston which is arranged to be movable in the cylinder along the longitudinal axis between the piston and the first, gas which is contained in the cylinder between the separating piston and the first, and liquid which is contained between the separating piston and the piston. Moreover, the gas spring comprises an expansion chamber for the liquid and a pressure regulating device, which is adapted to control the liquid transport between the cylinder and the expansion chamber in dependence of the temperature, thereby keeping the force characteristics of the gas spring substantially independent of the temperature.2013-02-14
20130038005Multipiece cushioning assembly for a telescoping shock absorbing assembly - A multipiece cushioning assembly adapted to be arranged in combination with a shock absorbing apparatus. The multipiece cushioning assembly is disposed between a pair of radial shoulders on first and second members telescoping members of the shock absorbing apparatus arranged in operable combination relative to each other. The radial shoulders on the first and second members limit travel of the shock absorbing apparatus, and with said multipiece cushioning assembly including a plurality of elastomeric bumpers arranged in a generally circular array for absorbing over-travel of the first and second members relative to each other and for readily permitting replacement of the multipiece cushioning assembly while maintaining the first and second members in operable combination relative to each other.2013-02-14
20130038006LIQUID-SEALED ANTI-VIBRATION DEVICE AND METHOD FOR MANUFACTURING THE SAME - A liquid-sealed anti-vibration device comprising: an inner tube (2013-02-14
20130038007ENERGY-ABSORBING ELEMENT AND RELATED PRETENSIONING FLANGE - The invention essentially relates to an energy-absorbing element (2013-02-14
20130038008Apparatus to Facilitate the Commencement and Execution of Off-Loom Bead Weaving Stitches and Method(s) of Using Same - An apparatus that facilitates commencement and execution off-loom bead weaving stitches such as, but not limited to, odd/even count Peyote (Gourd), Two (or more) Drop Peyote, Herringbone (Ndebele), Brick (Comanche/Cheyenne), Right Angle Weave, Netting, and derivative stitches. The apparatus in all embodiments provides means to temporarily secure beads by use of one or more of the following: a nonflexible or flexible filament-with or without aid of a sewing needle, friction, clasping with means to engage and disengage or a releasable adhesive in a format that enables the user to have improved sightline and access to the beads, improved control of bead placement resulting in a reduction of color placement and stitch execution errors, and allows the completed or in progress beadwork to be removed from the apparatus intact. The apparatus may be formatted for bead size and configured or combined to accommodate the width of the desired beadwork.2013-02-14
20130038009VISE WITH PUSH DEVICE - A vise includes a body and a fixed jaw connected to the body, a movable jaw, a driving unit, and a push unit. The body has a guide member and the driving unit has a threaded rod which is co-axially connected to the movable jaw. A locking member is threadedly mounted to the threaded rod. The push device has a slide mounted to the guide member, a joint member connected to the slide and a cylinder connected to the slide. The slide has a groove and the joint member has a pivot which is engaged with the groove. When activating the cylinder, the movable jaw is moved toward to or away from the fixed jaw by the joint member and the locking member, and the clamping force is magnified.2013-02-14
20130038010CONTAINER FOR ACCOMMODATING PRODUCTS DURING A HIGH-PRESSURE TREATMENT - The invention relates to a container for the accommodation of products during a high pressure treatment of the products, whereby the container comprises an outer wall and a cavity situated within the outer wall for the accommodation of the products. With the container according to the invention at least one section of the outer wall is formed by a large number of mutually coupled chain links, which are arranged in the form of at least one multi-dimensional chain link matrix.2013-02-14
20130038011PRINTER PALLET ASSEMBLY FOR THE USE IN PRINTING MULTIPLE ARTICLES OF MANUFACTURE - A pallet assembly for use in simultaneously printing multiple articles of manufacture. The assembly includes a pallet having a support surface, a carrier mountable onto the pallet and conforming with the pallet surface features (e.g., individual article of manufacture platforms) such that individual articles of manufacture may be place on the support surface(s) of the pallet yet the carrier substantially covers the remaining areas of the top surface of the pallet to protect the pallet from unintentional application of ink by the printer. The carrier also includes supports which allow a carrier loaded with articles of manufacture to be lifted off of the pallet and carried away for further processing. The assembly may also include a positioner which is mountable over the carrier on the pallet. The positioner operates as a jig for aligning each of the articles of manufacture in proper position on the support surface of the pallet.2013-02-14
20130038012SHEET PROCESSING APPARATUS AND IMAGE FORMING SYSTEM - A sheet processing apparatus 2013-02-14
20130038013SHEET STACKING APPARATUS - A sheet stacking apparatus includes a discharge unit, a stacking tray, an acquisition unit, a shift control unit, and an alignment unit. The shift control unit controls a stacking position of a sheet in a sheet width direction in response to shift information acquired by the acquisition unit. The alignment unit aligns a sheet staked on the stacking tray and moves to a position that abuts on a side edge of the sheet in the sheet width direction to align the sheet. The shift control unit controls a stacking position of a second sheet to stack the second sheet on a second position or on a first position depending on where a first sheet is stacked and on shift information of the second sheet.2013-02-14
20130038014IMAGE-FORMING APPARATUS AND PAPER CASSETTE USED THEREIN - An image-forming apparatus 2013-02-14
20130038015SHEET TAKE-OUT DEVICE - A sheet take-out device in which sheets are conveyed in an upright state and sheets having a low height can be stably taken out is provided.2013-02-14
20130038016SHEET FEEDING APPARATUS AND IMAGE FORMING APPARATUS - A sheet feeding apparatus and an image forming apparatus, which can improve sheet feeding performance at low cost without degrading usability, are provided. Projections 2013-02-14
20130038017SHEET PROCESSING DEVICE AND IMAGE FORMING APPARATUS - A sheet processing device includes: a first reservoir unit which reserves sheets; a sheet processing unit which implements predetermined processing for the sheets reserved in the first reservoir unit; a discharge unit which includes a stepping motor, and discharges the sheets from the first reservoir unit, the sheets being subjected to the predetermined processing by the sheet processing unit; an obtaining unit which obtains a value regarding weight of the sheets subjected to the predetermined processing; and a control unit which controls the discharge unit to lower a rotation speed of the stepping motor in a case where the value obtained by the obtaining unit is more than a predetermined value in comparison with a case where the value is less than the predetermined value.2013-02-14
20130038018IMAGE FORMING DEVICE INCLUDING OUTER COVER AND JAM COVER LINKED TO THE OUTER COVER - An image forming device includes a casing formed with an opening, a pivot member pivotably disposed in the casing so as to be selectively opened and closed, a cover disposed outward of the pivot member, a lock mechanism that maintains a closed state of the pivot member, a link mechanism and a first roller and a second roller that together convey a recording medium, the first roller being supported by the pivot member, wherein the first roller moves away from the second roller when the pivot member is in the opened state.2013-02-14
20130038019Gift exchange and trading game - This game is a method for playing this gift or item exchange game at a party or other gathering, for the purpose of enhancing the enjoyment and interaction of the participants, while exchanging gifts or trading items. The game is played with Turn Cards, Trader Cards, and Block Cards. The turn cards establish the order of play, the trader cards instruct a player through predetermined instructions to select an unclaimed item which concludes the turn. The trader card may instruct the player to select a turn card or claimed item from a targeted player. The targeted player may then give up the turn card or claimed item, or may request a block card with predetermined instructions to prevent the player from taking the targeted player's turn card or claimed item. A turn is completed when a player selects an unclaimed item. The game ends when no unclaimed items remain.2013-02-14
20130038020Shooting Target and Method of Manufacture - A shooting target comprising a target body having a front skin having a front face; a backing; an interior cavity; one or more fluid carriers adjacent the front skin and carrying colored fluid. Upon penetration of the front skin and the one or more fluid carriers, colored fluid is emitted from the one or more fluid carriers and onto the front face.2013-02-14
20130038021ANNULAR SEAL - A seal assembly capable of low temperature service is disclosed. It features upper and lower metallic backup rings that are specially shaped to act as a spring to keep the sidewalls of such rings in contact with the inside and outside surfaces to be sealed to prevent extrusion of the seal material even in low temperature situations. Inner and outer grooves are provided. O-ring seals, used for the ID of the seal, are manufactured to have a slightly greater diameter than the groove into which they will be installed. The greater length provides stored energy to promote sealing functionality in cold temperature situations. The O-rings used for the OD of the seal are manufactured to have a slightly smaller diameter than the groove into which they will be installed. The shorter length provides stored energy to promote sealing functionality in cold temperature situations.2013-02-14
20130038022SEAL ASSEMBLY AND METHOD FOR FLOWING HOT GAS IN A TURBINE - According to one aspect of the invention, a seal assembly includes a mounting structure coupled to an inner static structure in a turbine. Further, the seal assembly includes a brush seal member coupled to the mounting structure, wherein the brush seal member includes a first end that is in sealing contact with a rotor and a second end in sealing contact with a stator and wherein the brush seal member includes a plurality of bristles.2013-02-14