06th week of 2011 patent applcation highlights part 14 |
Patent application number | Title | Published |
20110031418 | OPTICAL SENSOR MEASUREMENT AND CROSSTALK EVALUATION - An apparatus for the measurement of optical sensor performance includes a light emitter, a focuser and a controller. The optical sensor comprises a plurality of pixels, which may be arranged as a pixel array. The light emitter projects a light spot onto the sensor. The focuser focuses the light spot onto a specified portion of the sensor in accordance with a control signal. The controller analyzes an output signal of the optical sensor, and generates the control signal to an accuracy substantially confining the light spot to a single pixel in accordance with the analysis. | 2011-02-10 |
20110031419 | SMOKE SENSOR - A current-voltage converting circuit ( | 2011-02-10 |
20110031420 | Optical Sensor System on a Device for the Treatment of Liquids - Optical sensor system on a device for the treatment of liquids with at least one device for the projecting of light in the direction of an optical axis onto at least one illumination area in the space, an adjustment device for the adjustment of the relative position of the at least one illumination area and a boundary surface in a direction diagonal to the optical axis, an adjustment device for the adjustment of the relative position of the at least one illumination area and the boundary surface in the direction of the optical axis, a control device for controlling the adjustment devices, such that they simultaneously adjust the relative position of the at least one illumination area and the boundary surface diagonal to the at least one device for the imaging of the at least one illumination area during the adjustment of the relative position onto at least one photodetector and an evaluation device connected with the at least one photodetector for the evaluation of the at least one measurement signal. | 2011-02-10 |
20110031421 | BLOWOUT PREVENTER HAVING WEAR, SEAL AND GUIDE PLATE INSERTS - A method of preventing wear in a blowout preventer includes the steps of forming an inner surface of a blowout preventer body to receive wear inserts at least one wear point in the blowout preventer body; and securing at least one wear insert on the formed inner surface of the blowout preventer body. | 2011-02-10 |
20110031422 | VALVE-CONTROLLED POSITIVE-DISPLACEMENT MACHINE - In a valve-controlled hydrostatic positive-displacement machine and a method for its control, the positive-displacement machine having a plurality of cylinder-piston units which are activated or deactivated via electrically or electro-hydraulically actuated low-pressure valves and via high-pressure valves for setting a delivery or absorption volume flow of the positive-displacement machine, if the volume flow is essentially unchanged, the activation and deactivation of the cylinder-piston units is effected in accordance with one of a plurality of activation patterns valid for the particular volume flow. | 2011-02-10 |
20110031423 | HYDRAULIC CONTROL ARRANGEMENT FOR CONTROLLING A VARIABLE FLUID VOLUME FLOW - A hydraulic control system for controlling a variable fluid volume flow to a consumer ( | 2011-02-10 |
20110031424 | HIGH ACCURACY, ZERO BACKLASH ROTARY-TO-LINEAR ELECTROMECHANICAL ACTUATOR - An electromechanical actuator is provided for converting rotary action into linear action, and includes an electric motor, a cable yoke, an output shaft, and a pair of cables. The electric motor is adapted to be selectively energized and is configured, upon being energized to generate a drive torque. The cable yoke is coupled to receive the drive torque and is configured, upon receipt thereof, to rotate about a rotational axis. The output shaft is coupled to receive a drive force and is configured, upon receipt thereof, to translate along a linear axis that is disposed at least substantially perpendicular to the rotational axis. Each cable is wound, in pretension, on a portion of the cable yoke and around a portion of the output shaft. The pair of cables is configured, upon rotation of the cable yoke, to supply the drive force to the output shaft. | 2011-02-10 |
20110031425 | MOTOR OPERATED BUTTERFLY VALVE - A system for operating a valve including a motor shaft driven by a motor, a cam, a non-contact sensor, and a butterfly valve plate mounted on a butterfly valve shaft. The cam has an exterior profile and is mounted to the motor shaft. The non-contact sensor is proximate to the cam's exterior profile. The butterfly shaft is coupled to the motor shaft. A selected position of the butterfly valve plate may be set by activating the motor to a position determined by sensing the cam profile by the non-contact sensor. | 2011-02-10 |
20110031426 | ENGINE CONTROL VALVE SYSTEM WITH MOTOR - A system for operating a valve comprising a motor shaft driven by a motor; a first cam with a profile mounted to the motor shaft, a second cam with a profile mounted to the motor shaft; a non-contact sensor proximate to the first cam; and a valve actuator. The valve actuator follows the profile of the second cam. A selected position of the valve actuator may be set by activating the motor to a position determined by sensing the first cam profile by the non-contact sensor. | 2011-02-10 |
20110031427 | SEALING ARRANGEMENT FOR A DIAPHRAGM VALVE - A diaphragm valve is disclosed. The diaphragm valve includes a valve body including a housing defining a fluid flow passageway and a valve seat. A bonnet assembly including a housing is mounted to the valve body. A diaphragm, a backing cushion and a resilient member are positioned between the bonnet assembly and the valve body. The resilient member is sandwiched between the housing of the bonnet assembly and the backing cushion for urging the backing cushion toward the diaphragm, thereby urging the diaphragm against the valve body. | 2011-02-10 |
20110031428 | SAMPLING VALVE - The sampling valve comprises a valve body that is movable in a valve housing between a closing position and an opening position of the sampling valve, and is characterized in that the valve body comprises an outlet bore for the sample to be taken, the outlet bore continuously increasing in size towards the free end of the valve body, and that the lower edge of the outlet bore is sloping downwards towards the free end. After a sample has been taken, there will be no drops remaining in the outlet bore, whereby a source of contamination for a sample taken that has so far been encountered frequently is now eliminated. | 2011-02-10 |
20110031429 | Use of exfoliated clay nanoplatelets and method for encapsulating cations - This invention relates to a method for making an electrolyte composition of a dye-sensitized solar cell comprising utilizing exfoliated clay nanoplatelets and the method for rapidly encapsulating cations. The electrolyte composition mainly includes exfoliated clay nanoplatelets, an ionic liquid and iodine. The method for rapidly encapsulating cation comprises adding the exfoliated clay nanoplatelets into a cationic solution, wherein the exfoliated clay nanoplatelets encapsulates cations and recovers into a layered structure such that phase separation of the solution occurs; and filtrating the solution to separate the clay nanoplatelets encapsulating the cations. The exfoliated clay nanoplatelets have a unique property of encapsulation for the cations, is suitable for use in an electrolyte composition for dye-sensitized solar cells, cationic drug encapsulation and environmental protection. | 2011-02-10 |
20110031430 | SYNTHESIS OF WATER-SOLUBLE ORGANIC NANOPARTICLES AS EPR STANDARD - Novel water soluble paramagnetic organic nanoparticles are formed by a novel method where an organic solution of an organic compound is injected into water under agitation that is maintained for a desired period of time for nanoparticle growth followed by termination of the growth by the addition of an aqueous surfactant solution. The size of the nanoparticles depends on the time between injection and addition of the surfactant solution. In embodiments of the invention, the water soluble paramagnetic organic nanoparticles can be DPPH nanoparticles, DPPH nanoparticles doped with DPPH-H, or core/shell nanoparticles where a DPPH core is covered by a DPPH-H shell. | 2011-02-10 |
20110031431 | MAGNETIC COMPOSITE STRUCTURES WITH HIGH MECHANICAL STRENGTH - Magnetic fiber structures include a fiber and a plurality of permanent magnet particles carried by the fiber. | 2011-02-10 |
20110031432 | MECHANICAL IMPROVEMENT OF RARE EARTH PERMANENT MAGNETS - A process for mechanically strengthening a permanent magnet includes providing nanofibers or nanotubes, providing a ferromagnetic metal, defining a mixture by mixing the ferromagnetic metal with the nanofibers or nanotubes and sintering the mixture. | 2011-02-10 |
20110031433 | THERMOSETTING EPOXY RESIN, A COMPOSITE MATERIAL, A METHOD OF FORMING A COMPOSITE MATERIAL ARTICLE, A MOULD AND A METHOD OF MAKING A MOULD - A thermosetting epoxy resin includes particles of magnetite and conductive carbon to act as microwave susceptors. A composite material comprises a thermosetting epoxy resin matrix phase with particles of magnetite and a carbon fibre reinforcement phase. A mould for a composite article comprises a mould body made from a material that is substantially transparent to microwaves with a surface or rear surface layer including microwave radiation absorbing material. | 2011-02-10 |
20110031434 | MULTIFERROIC MATERIAL AND METHOD OF MANUFACTURING THE SAME - The present invention relates to a multiferroic material capable of freely controlling magnetic field size at room temperature, and to a method of manufacturing the same. Said multiferroic material includes hexaferrites containing magnetic iron ions partially substituted by non-magnetic ions. Said non-magnetic ions act to change the magnetic anisotropy of said hexaferrites. | 2011-02-10 |
20110031435 | (METH)ACRYLIC PRESSURE-SENSITIVE ADHESIVE FOAM AND METHOD FOR PRODUCING THE SAME - A (meth)acrylic pressure-sensitive adhesive foam reduced in the amount of a foaming adjuvant compared with the conventional foam and having a high air bubble content, and a method for producing the same are provided. The foam includes a partial polymer having (a) one or more alkyl (meth)acrylate monomers having one reactive unsaturated group, the alkyl group having 12 or less carbon atoms, (b) a monomer for crosslinking, which is copolymerizable with the component (a), and (c) a copolymer of the component (a) and the component (b); a thermally conductive filler; and a foaming adjuvant containing surface modified nanoparticles having a particle diameter of 20 nm or less, wherein a crosslinked structure containing the component (c) is formed in the curable composition. | 2011-02-10 |
20110031436 | COMPOSITIONS COMPRISING 2,3-DICHLORO-1,1,1-TRIFLUOROPROPANE, 2-CHLORO-1,1,1-TRIFLUOROPROPENE, 2-CHLORO-1,1,1,2-TETRAFLUOROPROPANE OR 2,3,3,3-TETRAFLUOROPROPENE - Disclosed are compositions comprising HCFC-243db, HCFO-1233xf, HCFC-244db and/or HFO-1234yf and at least one additional compound. For the composition comprising 1234yf, the additional compound is selected from the group consisting of HFO-1234ze, HFO-1243zf, HCFC-243db, HCFC-244db, HFC-245cb, HFC-245fa, HCFO-1233xf, HCFO-1233zd, HCFC-253fb, HCFC-234ab, HCFC-243fa, ethylene, HFC-23, CFC-13, HFC-143a, HFC-152a, HFC-236fa, HCO-1130, HCO-1130a, HFO-1336, HCFC-133a, HCFC-254fb, HCFC-1131, HFO-1141, HCFO-1242zf, HCFO-1223xd, HCFC-233ab, HCFC-226ba, and HFC-227ca. Compositions comprising HCFC-243db, HCFO-1233xf, and/or HCFC-244db are useful in processes to make HFO-1234yf. Compositions comprising HFO-1234yf are useful, among other uses, as heat transfer compositions for use in refrigeration, air-conditioning and heat pump systems. | 2011-02-10 |
20110031437 | Positive Electrode Active Material for Lithium Ion Battery, Positive Electrode for Secondary Battery, and Lithium Ion Battery - Provided is a positive electrode active material for a lithium ion battery positive electrode material made of lithium-containing nickel-manganese-cobalt composite oxide of a layered structure represented with LiaNixMnyCozO | 2011-02-10 |
20110031438 | METHODS AND COMPOSITIONS FOR OBTAINING HIGH-RESOLUTION CRYSTALS OF MEMBRANE PROTEINS - The invention describes compositions and method useful for the crystallization of membrane proteins. | 2011-02-10 |
20110031439 | PROCESSES FOR HYDROMETHANATION OF A CARBONACEOUS FEEDSTOCK - The present invention relates to processes for preparing gaseous products, and in particular a hydrogen product stream and optionally a methane product stream, via the hydromethanation of carbonaceous feedstocks in the presence of steam, carbon monoxide, hydrogen and a hydromethanation catalyst. | 2011-02-10 |
20110031440 | REDOX-ACTIVE POLYMERS AND THEIR APPLICATIONS - The present invention is directed to a redox-active, conducting polymer energy storage system, said system including an electrode and a counter electrode, wherein the electrode comprises a first conducting polymer and the counter electrode comprises a second conducting polymer, wherein the first conducting polymer is doped by at least one or more first redox-active compounds and/or by a polymer and/or a co-polymer of the one or more first redox-active compounds and the second conducting polymer is doped by at least one or more second redox-active compounds and/or by a polymer and/or a co-polymer of the one or more second redox-active compounds, and wherein there is a potential difference between the dopant for the electrode and the dopant for the counter electrode. In one preferred embodiment, the first or the second redox-active compound is 2,2′-azinobis(3-ethylbenzothiazoline-6-sulfonate) (ABTS). In another preferred embodiment, an exemplary redox-active compound is a polymerizable derivative of ABTS or a polymer or co-polymer of this monomer. | 2011-02-10 |
20110031441 | ELECTRICALLY CONDUCTIVE POLYMER COMPOSITIONS - There are provided electrically conducting polymer compositions comprising an electrectically conductive polymer or copolymer and an organic solvent wettable fluorinated acid polymer. Electrically conductive polymer materials are derived from thiophene, pyrrole, aniline and polycyclic heteroaromatic precursor monomers. Non-conductive polymers derived from alkenyl, alkynyl, arylene, and heteroarylene precursor monomers. The organic-solvent wettable fluorinated acid polymer is fluorinated or highly fluorinated and may be colloid-forming. Acidic groups include carboxylic acid groups, sulfonic acid groups, sulfonimide groups, phosphoric acid groups, phosphonic acid groups, and combinations thereof. The compositions can be used in organic electronic devices. | 2011-02-10 |
20110031442 | Method For Preparing Electrostatic Dissipative Polymer - A method for preparing an electrostatic dissipative polymer and a blend of a thermoplastic polymer and the ESD polymer is disclosed. The method for preparing an electrostatic dissipative polymer includes the step of polymerizing the electrostatic dissipative polymer in the presence of a reactive solvent and lithium salt dissolved in the reactive solvent, wherein the amount of the reactive solvent is from 0.1 to 20 weight parts based on 100 weight parts of the produced electrostatic dissipative polymer, the amount of lithium salt is from 0.1 to 5 weight parts based on 100 weight parts of the produced electrostatic dissipative polymer, and the reactive solvent is aliphatic glycol having from 2 to 8 carbon atoms and having a primary alcohol group, or aromatic glycol having from 2 to 10 carbon atoms. | 2011-02-10 |
20110031443 | Multicomponent carbon nanotube-polymer complex, composition for forming the same, and preparation method thereof - A multicomponent carbon nanotube-polymer complex, a composition for forming the same, and a preparation method thereof are disclosed herein. A multicomponent carbon nanotube-polymer complex may include carbon nanotubes surface-modified with double bond-containing functional groups or carbon nanotubes surface-modified with oxirane groups and/or carbon nanotubes surface-modified with anhydride groups; a polymer binder; and/or acid-treated carbon nanotubes and/or pristine carbon nanotubes. The multicomponent carbon nanotube-polymer complex may exhibit remarkably improved mechanical and hardening properties, compared with conventional complexes using only carbon nanotubes and a polymer binder, and thus may be advantageously used as an electromagnetic wave shielding material and a conductive material. | 2011-02-10 |
20110031444 | POLYMERIC PRECURSORS FOR CIS AND CIGS PHOTOVOLTAICS - This invention relates to a range of compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials for photovoltaic applications including devices and systems for energy conversion and solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. A compound may contain repeating units {M | 2011-02-10 |
20110031445 | PROCESSES FOR POLYMERIC PRECURSORS FOR CAIGS SILVER-CONTAINING PHOTOVOLTAICS - This invention relates to processes for compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. A compound may contain repeating units {M | 2011-02-10 |
20110031446 | Dye-Sensitized Photoelectric Conversion Device - A photoelectric conversion device using a semiconductor fine material such as a semiconductor fine particle sensitized with a dye carried thereon, characterized in that the dye is a methine type dye having a specific partial structure, for example, a methine type dye having a specific carboxyl-substituted hetero ring on one side of a methine group and an aromatic residue substituted with a dialkylamino group or an organic metal complex residue on the other side of the methine group, or a methine type dye having a carboxyl-substituted aromatic ring on one side of a methine group and a heteroaromatic ring having a dialkylamino group or an organic metal complex residue on the otherside of the methine group; and a solar cell using the photoelectric conversion element. The photoelectric conversion element exhibits a conversion efficiency comparable or superior to that of a conventionally known photoelectric conversion element sensitized with a methine type dye. | 2011-02-10 |
20110031447 | PROCESS FOR THE PREPARATION OF A CONDUCTIVE POLYMER COMPOSITION - The present invention relates to a process for the preparation of a conductive polymer composition comprising the steps of A) providing a latex containing a conductive polymer; B) mixing the latex from A with either an aqueous latex of a polymer, or with (a) water-soluble precursor(s) of a polymer; C) removing water from the so obtained mixture; D) heating the product from step C) to a temperature at which the polymer added in step B flows or where the polymer introduced in step B is formed from out of its precursor(s); and E) processing and/or solidifying the product of step D) into a desired form, wherein the amount of conductive polymer is between | 2011-02-10 |
20110031448 | Copper Powder for Conductive Paste and Conductive Paste - Copper powder is provided, which, while having fine granularity, does not loose either resistance to oxidation or balance in conductivity, and furthermore, copper powder for conductive paste in which variations in shape and granularity are small and having a low concentration in oxygen content. The copper powder for conductive paste contains 0.07 to 10 atomic % Al inside each copper particle in the powder. | 2011-02-10 |
20110031449 | CONDUCTIVE FINE PARTICLES AND ANISOTROPIC CONDUCTIVE MATERIAL - The invention provides conductive fine particles with a satisfactory monodisperse property, low cost, resistance to migration and excellent conductivity. Conductive fine particles having core particle surfaces coated with a metal-plated coating film layer containing nickel and phosphorus and a multilayer conductive layer comprising a palladium layer as the outer surface, wherein the phosphorus content in region A of the metal-plated coating film layer, at a distance of no greater than 20% of the thickness of the entire metal-plated coating film layer from the surface of the core particle, is 7-15 wt % of the entire region A, the phosphorus content in region B of the metal-plated coating film layer, at a distance of no greater than 10% of the thickness of the entire metal-plated coating film layer from the surface of the metal-plated coating film layer on the palladium layer side, is 0.1-3 wt % of the entire region B, and the phosphorus content of the entire metal-plated coating film layer is 7 wt % or greater. | 2011-02-10 |
20110031450 | CONDUCTIVE NANOCOMPLEX AND METHOD OF MANUFACTURING THE SAME - Provided is a nanocomplex comprising a core consisting of a metal; and a periphery being formed on a surface of the core to surround the core and consisting of an inorganic substance and a conductive polymer | 2011-02-10 |
20110031451 | SINTERED BODY, AND THERMOELECTRIC CONVERSION MATERIAL - Disclosed are a sintered body and a thermoelectric conversion material. The sintered body comprises a manganese-based oxide as a main component, and further comprises an oxide A wherein the oxide A represents one or more members selected from among nickel oxides, copper oxide and zinc oxide, and a metal M wherein the metal M represents one or more members selected from among Pd, Ag, Pt and Au. | 2011-02-10 |
20110031452 | Nanoparticles Having Continuous Photoluminescence - A nanoparticle comprising a ternary core comprising Cd, Zn and Se; and a shell comprising Zn and Y, wherein Y is Se or S or a combination thereof. The Cd and Zn are non-homogenously distributed in the ternary core such that the nanoparticle exhibits continuous photoluminescence for extended periods of time. Also provided are methods for preparing and methods of using the nanoparticles which exhibit continuous photoluminescence. | 2011-02-10 |
20110031453 | PROCESSES FOR POLYMERIC PRECURSORS FOR CAIGAS ALUMINUM-CONTAINING PHOTOVOLTAICS - This invention relates to processes for compounds, polymeric compounds, and compositions used to prepare semiconductor and optoelectronic materials and devices including thin film and band gap materials. This invention provides a range of compounds, polymeric compounds, compositions, materials and methods directed ultimately toward photovoltaic applications, transparent conductive materials, as well as devices and systems for energy conversion, including solar cells. In particular, this invention relates to polymeric precursor compounds and precursor materials for preparing photovoltaic layers. In particular, this invention relates to molecular precursor compounds and precursor materials for preparing photovoltaic layers including CAIGAS. | 2011-02-10 |
20110031454 | SMOKE SUPPRESSANTS - The present invention is directed to smoke suppressants based on ammonium octamolybdate chemistry. According to this invention, the precipitation of ammonium octamolybdate in the presence of an inert mineral core produce a novel high surface area ammonium octamolybdate smoke suppressant. The high surface area significantly increases the smoke suppression performance over a standard ammonium octamolybdate. This invention is also directed to a process for making the high surface area ammonium octamolybdate smoke suppressant. The smoke suppressant of this invention is particularly suitable for smoke suppression in polyvinyl chloride (PVC) applications. | 2011-02-10 |
20110031455 | Carpet pad separator - This invention concerns a carpet stand for lifting carpet, containing a rigid lift tip body along its long axis, further containing a support rod and a lifting tip. The lifting tip itself lies tangent to the exterior of the rigid lift tip's body, and perpendicular to its long axis, and is shaped such that it may grip or hold onto, into the backing of a carpet. The support rod itself is sized so that it may pass through the backing of a carpet. The support rod is then inserted down through the carpet such that the lift tip will grip and raise the carpet a distance sufficient to separate a carpet from its supporting surface. | 2011-02-10 |
20110031456 | VEHICLE RESTRAINT SYSTEM - The invention relates to a vehicle restraint system for demarcating roadways, including guard rails ( | 2011-02-10 |
20110031457 | Foldable Child Enclosure - A child enclosure apparatus that includes a hub assembly, a base assembly having four base legs in an X-shaped configuration, a side structure having four side posts, an upper assembly having four pairs of upper arms with each pair connected with medial latch connectors, lower corner assemblies, each having a pair of plates that are pivotally mounted to a side post and a pair of base legs, upper corner assemblies, each having two pair of plates that are configured at a right angle to each other, and cables extending from the base assemblies, through the side posts and being connected to the upper arms and to the latch connectors. The enclosure apparatus is operated by linear movement of the hub assembly, either by a motor assembly or manually, to cause simultaneous movement of the base legs, the upper arms and the latch connectors between opened and folded positions by tensioning the cables. The lower corner assemblies are pivotally connected to the side posts and the base legs so as to prevent unintended opening of the enclosure from a folded position. | 2011-02-10 |
20110031458 | COMPACT STACKABLE FENCE SUPPORT - A stackable barrier including a generally planar fence portion and a plurality of generally identical supports, supporting the generally planar fence portion, each of the generally identical supports including a generally triangular main planar portion and a pair of oppositely directed side portions which extend in respective planes angled with respect to main planar portion, each of the plurality of generally identical supports being arranged with respect to the generally planar fence portion such that planes of the main planar portion of at least two of the generally identical supports are not mutually parallel. | 2011-02-10 |
20110031459 | INFORMATION RECORDING AND REPRODUCING DEVICE - According to one embodiment, an information recording and reproducing device includes a first layer, a second layer and a recording layer. The recording layer is provided between the first layer and the second layer and being capable of reversibly changing between a first state having a first resistance and a second state having a second resistance higher than the first resistance. The recording layer includes a first compound layer and a second compound layer. The first compound layer contains a first compound. The first compound includes a first cation element and a second cation element of a type different from the first cation element. The second compound layer contains a second compound. The second compound includes a transition element having a d-orbital partially filled with electron, and the second compound includes a void site capable of storing at least one of the first cation element and the second cation element. | 2011-02-10 |
20110031460 | Self-Aligned Memory Cells and Method for Forming - The invention provides a memory cell based on variable resistance material memory element that includes an access device having a pillar structure that may also include a protective sidewall layer. The pillar access device selects and isolates the memory cell from other memory array cells and is adapted to both self-align any memory element formed thereon, and to deliver suitable programming current to the memory element. The pillar structure is formed from one or more access device layers stacked above a wordline and below the memory element. Optional resistive layers may be selectively formed within the pillar structure to minimize resistance in the access device layer and the memory element. The pillar access device may be a diode, transistor, Ovonic threshold switch or other device capable of regulating current flow to an overlying programmable memory material. | 2011-02-10 |
20110031461 | PHASE CHANGE MEMORY DEVICE - A method of fabricating a phase change memory device includes forming an opening in a first layer, forming a phase change material in the opening and on the first layer, heating the phase change material to a first temperature that is sufficient to reflow the phase change material in the opening, wherein the first temperature is less than a melting point of the phase change material, and, after heating the phase change material to the first temperature, patterning the phase change material to define a phase change element in the opening. | 2011-02-10 |
20110031462 | Electronic Component, And A Method of Manufacturing An Electronic Component - Provided is an electronic component that includes a first bi-layer stack including a first silicon oxide layer and a first silicon nitride layer, a second bi-layer stack including a second silicon oxide layer and a second silicon nitride layer, and a convertible structure which is convertible between at least two states having different electrical properties, where the convertible structure is arranged between the first bi-layer stack and the second bi-layer stack. | 2011-02-10 |
20110031463 | RESISTANCE-CHANGE MEMORY - According to one embodiment, a resistance-change memory includes a variable resistance element having a laminated structure in which a first electrode, a resistance-change film and a second electrode are laminated, and set to a low-resistance state and a high-resistance state according to stored data, an insulating film provided on a side surface of the variable resistance element, and a fixed resistance element provided on a side surface of the insulating film, and includes a conductive film, the fixed resistance element being connected in parallel with the variable resistance element. | 2011-02-10 |
20110031464 | PHASE CHANGE MEMORY DEVICES AND METHODS OF FORMING A PHASE CHANGE MATERIAL - A phase change material including a high adhesion phase change material formed on a dielectric material and a low adhesion phase change material formed on the high adhesion phase change material. The high adhesion phase change material includes a greater amount of at least one of nitrogen and oxygen than the low adhesion phase change material. The phase change material is produced by forming a first chalcogenide compound material including an amount of at least one of nitrogen and oxygen on the dielectric material and forming a second chalcogenide compound including a lower percentage of at least one of nitrogen and oxygen on the first chalcogenide compound material. A phase change random access memory device, and a semiconductor structure are also disclosed. | 2011-02-10 |
20110031465 | RESISTANCE VARIABLE ELEMENT AND MANUFACTURING METHOD THEREOF - A resistance variable element of the present invention comprises a first electrode ( | 2011-02-10 |
20110031466 | SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF MANUFACTURING THE SAME - Disclosed herein is a semiconductor memory device, including: a first electrode formed on a substrate; an ion source layer formed on an upper layer of the first electrode; and a second electrode formed on an upper layer of the ion source layer. Resistance change type memory cells in each of which either a surface of the first electrode or a surface of the ion source layer is oxidized to form a resistance change type memory layer in an interface between the first electrode and the ion source interface are arranged in a array. | 2011-02-10 |
20110031467 | INFORMATION RECORDING AND REPRODUCING APPARATUS - An information recording and reproducing apparatus according to an embodiment has a memory cell including a recording layer operative to change in a reversible manner between a first state having a certain resistance value upon application of a voltage pulse and a second state having a resistance value higher than that of the first state. The recording layer includes a first compound layer represented by a composition formula of A | 2011-02-10 |
20110031468 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a nonvolatile memory device includes a substrate, a first electrode, a second electrode, a third electrode, a first memory portion and a second memory portion. The first electrode extends in a first direction and is provided on the substrate. The second electrode extends in a second direction crossing the first direction and is provided on the first electrode. The third electrode extends in a third direction crossing the second direction and is provided on the second electrode. The first memory portion is provided between the first and the second electrodes and has a first oxygen composition ratio and a first layer thickness. The second memory portion is provided between the second and the third electrodes and has at least one of a second oxygen composition ratio different from the first oxygen composition ratio and a second layer thickness different from the first layer thickness. | 2011-02-10 |
20110031469 | SEMICONDUCTOR DEVICE - The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer. | 2011-02-10 |
20110031470 | METHODS FOR FABRICATING PASSIVATED SILICON NANOWIRES AND DEVICES THUS OBTAINED - Methods for fabricating passivated silicon nanowires and an electronic arrangement thus obtained are described. Such arrangements may comprise a metal-oxide-semiconductor (MOS) structure such that the arrangements may be utilized for MOS field-effect transistors (MOSFETs) or opto-electronic switches. | 2011-02-10 |
20110031471 | Laser-Induced Structuring of Substrate Surfaces - In one aspect, the present invention provides a method of processing a substrate, e.g., a semiconductor substrate, by irradiating a surface of the substrate (or at least a portion of the surface) with a first set of polarized short laser pulses while exposing the surface to a fluid to generate a plurality of structures on the surface, e.g., within a top layer of the surface. Subsequently, the structured surface can be irradiated with another set of polarized short laser pulses having a different polarization than that of the initial set while exposing the structured surface to a fluid, e.g., the same fluid initially utilized to form the structured surface or a different fluid. In many embodiments, the second set of polarized laser pulses cause the surface structures formed by the first set to break up into smaller-sized structures, e.g., nano-sized features such as nano-sized rods. | 2011-02-10 |
20110031472 | SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH A HIGHLY REFLECTIVE OHMIC-ELECTRODE - A semiconductor light-emitting device includes a multilayer semiconductor structure on a conductive substrate. The multilayer semiconductor structure includes a first doped semiconductor layer situated above the conductive substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, and/or an MQW active layer situated between the first and second doped semiconductor layers. The device also includes a reflective ohmic-contact metal layer between the first doped semiconductor layer and the conductive substrate, which includes Ag, and at least one of: Ni, Ru, Rh, Pd, Au, Os, Ir, and Pt; plus at least one of: Zn, Mg Be, and Cd; and a number of: W, Cu, Fe, Ti, Ta, and Cr. The device further includes a bonding layer between the reflective ohmic-contact metal layer and the conductive substrate, a first electrode coupled to the conductive substrate, and a second electrode coupled to the second doped semiconductor layer. | 2011-02-10 |
20110031473 | Nanomesh SRAM Cell - Nanowire-based devices are provided. In one aspect, a SRAM cell includes at least one pair of pass gates and at least one pair of inverters formed adjacent to one another on a wafer. Each pass gate includes one or more device layers each having a source region, a drain region and a plurality of nanowire channels connecting the source region and the drain region and a gate common to each of the pass gate device layers surrounding the nanowire channels. Each inverter includes a plurality of device layers each having a source region, a drain region and a plurality of nanowire channels connecting the source region and the drain region and a gate common to each of the inverter device layers surrounding the nanowire channels. | 2011-02-10 |
20110031474 | ELECTROLUMINESCENT DEVICE WITH IMPROVED LIGHT DECOUPLING - The invention relates to an electroluminescent device which comprises a substrate ( | 2011-02-10 |
20110031475 | Semiconductor Composition - A semiconducting liquid composition including a semiconducting material comprising a compound of the formula disclosed herein, a liquid vehicle, a solubility promoter that enhances solubility of the semiconducting polymer; and an optional crystallization inhibitor. | 2011-02-10 |
20110031476 | ORGANIC ELECTROLUMINESCENCE ELEMENT - The present invention provides an organic EL element having a multi-photon structure, in which optical absorption in the visible region caused by a charge-transfer complex in a conventional intermediate layer structure is inhibited, and the resistance of this intermediate layer to a counter career is improved, thus allowing high efficiency and a long operation life of the element. | 2011-02-10 |
20110031477 | ORGANIC LIGHT-EMITTING DIODES COMPRISING AT LEAST ONE DISILYL COMPOUND SELECTED FROM DISILYLCARBAZOLES, DISILYLDIBENZOFURANS, DISILYLDIBENZOTHIOPHENES, DISILYLDIBENZOPHOLES, DISILYLDIBENZOTHIOPHENE S-OXIDES AND DISILYLDIBENZOTHIOPHENE S,S-DIOXIDES - The present invention relates to an organic light-emitting diode comprising an anode An and a cathode Ka and a light-emitting layer E and if appropriate at least one further layer, where the light-emitting layer E and/or the at least one further layer comprises at least one compound selected from disilylcarbazoles, disilyldibenzofurans, disilyldibenzothiophenes, disilyldibenzophospholes, disilyldibenzothiophene S-oxides and disilyldibenzothiophene S,S-dioxides, to a light-emitting layer comprising at least one of the aforementioned compounds, to the use of the aforementioned compounds as matrix material, hole/exciton blocker material, electron/exciton blocker material, hole injection material, electron injection material, hole conductor material and/or electron conductor material, and to a device selected from the group consisting of stationary visual display units, mobile visual display units and illumination units comprising at least one inventive organic light-emitting diode. | 2011-02-10 |
20110031478 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting diode (OLED) display device and a method of fabricating the same. The OLED display device includes a substrate having a pixel region and a non-pixel region, a buffer layer arranged on the substrate, a semiconductor layer arranged in the non-pixel region of the substrate, a first electrode arranged in the non-pixel region and in the pixel region and electrically connected to the semiconductor layer, a gate insulating layer arranged on an entire surface of the substrate and partially exposing the first electrode in the pixel region, a gate electrode arranged on the gate insulating layer to correspond to the semiconductor layer, a pixel defining layer partially exposing the first electrode, an organic layer arranged on the first electrode; and a second electrode arranged on the entire surface of the substrate. | 2011-02-10 |
20110031479 | ENCAPSULATION SUBSTRATE, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE SAME AND METHOD OF FABRICATING THE SAME - An organic light emitting diode (OLED) display device and method of fabrication that includes a substrate having a device region, an outer dam region and an encapsulation region. The encapsulation region includes an inner dam region, an outer dam region and an encapsulation region that correspond to the device region. An encapsulation agent is formed in the encapsulation region of the encapsulation substrate, and filling dams are formed of the same material in the outer dam region and the inner dam region of the encapsulation substrate. | 2011-02-10 |
20110031480 | LIGHT EMITTING DEVICE - A light emitting device includes: a first electrode, a conductor film, an organic layer having a light emitting layer made of an organic light emitting material provided therein, a semi-transmissive reflective film, a resistive layer, and a second electrode, all of which are laminated successively, wherein the conductor film transmits a part of light from the light emitting layer therethrough, the first electrode reflects the light having been transmitted through the conductor film, the second electrode transmits the light having been transmitted through the semi-transmissive reflective film therethrough, an average film thickness of the conductor film on the first electrode is from 1 nm to 6 nm, and an average film thickness of the semi-transmissive reflective film on the organic layer is from 1 nm to 6 nm. | 2011-02-10 |
20110031481 | USES OF DITHIOCARBAMATE COMPOUNDS - The present invention relates to the use of dithiocarbamate compounds and to an assembly for use in an electronic device, said assembly comprising a self-assembled monolayer of at least one dithiocarbamate compound. The present invention also relates to an electronic device including such assembly. | 2011-02-10 |
20110031482 | ORGANIC ELECTROLUMINESCENT ELEMENT AND METHOD OF MANUFACTURING THE SAME - An organic electroluminescent element comprising: an organic laminate comprising at least an light emission layer formed via a wet process, the light emission layer comprising a host material and a guest material; and a pair of electrodes, wherein a solvent used for forming the light emission layer has a boiling point of 105° C. or less and a saturation vapor pressure at 20° C. of 20 mmHg or more, and a method of manufacturing the organic electroluminescent element | 2011-02-10 |
20110031483 | ORGANIC LIGHT EMITTING DEVICE - Embodiments of the present invention are directed to a heterocyclic compound and an organic light-emitting device including the heterocyclic compound. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltage, high luminance and long lifespan. | 2011-02-10 |
20110031484 | CONDENSED-CYCLIC COMPOUND AND ORGANIC LIGHT EMITTING DIODE HAVING ORGANIC LAYER INCLUDING THE SAME - A condensed-cyclic compound represented by Formula 1 and an organic light emitting diode including the same: | 2011-02-10 |
20110031485 | ORGANIC LIGHT EMITTING DEVICE - Embodiments of the present invention are directed to a heterocyclic compound and an organic light-emitting device including the heterocyclic compound. The organic light-emitting devices using the heterocyclic compounds have high-efficiency, low driving voltage, high luminance and long lifespan. | 2011-02-10 |
20110031486 | EVAPORATION MASK, METHOD OF FABRICATING ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME, AND ORGANIC ELECTROLUMINESCENT DEVICE - An evaporation mask, a method of manufacturing an organic electroluminescent device using the evaporation mask, and an organic electroluminescent device manufactured by the method are provided. The evaporation mask is formed of a thin film and is drawn taut by application of tension. The evaporation mask includes at least one mask unit, the mask unit including a plurality of main apertures, and a plurality of first dummy apertures formed adjacent to outermost ones of the main apertures in a direction in which tension is applied to the evaporation mask. | 2011-02-10 |
20110031487 | COMPOUND FOR ORGANIC THIN-FILM TRANSISTOR AND ORGANIC THIN-FILM TRANSISTOR USING THE COMPOUND - A compound for an organic thin film transistor having a structure shown by the following formula (1): | 2011-02-10 |
20110031488 | COMPOUND FOR ORGANIC THIN-FILM TRANSISTOR AND ORGANIC THIN-FILM TRANSISTOR USING THE COMPOUND - A compound for an organic thin film transistor having a structure shown by the following formula (1): | 2011-02-10 |
20110031489 | COMPLEMENTARY THIN FILM ELECTRONICS BASED ON ZnO/ZnTe - A complementary thin-film electronic device structure is provided where one of the transistors has a p-type channel region fabricated from zinc telluride material. The device structure further includes another field effect transistor having an n-type channel region disposed adjacent to and operably coupled to the p-type transistor. | 2011-02-10 |
20110031490 | THIN FILM TRANSISTOR - A method is proposed for producing a thin-film transistor (TFT), the method comprising forming a substrate, applying a ZnO-based precursor solution onto the substrate to form a ZnO-based channel layer, annealing the channel layer, forming a source electrode and a drain electrode on the channel layer, forming a dielectric layer on the channel layer and forming a gate electrode on the dielectric layer. | 2011-02-10 |
20110031491 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to provide a semiconductor device having a structure in which parasitic capacitance between wirings can be efficiently reduced. In a bottom gate thin film transistor using an oxide semiconductor layer, an oxide insulating layer used as a channel protection layer is formed above and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer, and at the same time an oxide insulating layer covering a peripheral portion (including a side surface) of the stacked oxide semiconductor layer is formed. Further, a source electrode layer and a drain electrode layer are formed in a manner such that they do not overlap with the channel protection layer. Thus, a structure in which an insulating layer over the source electrode layer and the drain electrode layer is in contact with the oxide semiconductor layer is provided. | 2011-02-10 |
20110031492 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The semiconductor device includes a driver circuit including a first thin film transistor and a pixel including a second thin film transistor over one substrate. The first thin film transistor includes a first gate electrode layer, a gate insulating layer, a first oxide semiconductor layer, a first oxide conductive layer, a second oxide conductive layer, an oxide insulating layer which is in contact with part of the first oxide semiconductor layer and which is in contact with peripheries and side surfaces of the first and second oxide conductive layers, a first source electrode layer, and a first drain electrode layer. The second thin film transistor includes a second gate electrode layer, a second oxide semiconductor layer, and a second source electrode layer and a second drain electrode layer each formed using a light-transmitting material. | 2011-02-10 |
20110031493 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer which each have a shape whose end portions are located on an inner side than end portions of the semiconductor layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is provided between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected in an opening provided in a gate insulating layer through an oxide conductive layer. | 2011-02-10 |
20110031494 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes steps of forming a gate electrode over a light-transmitting substrate, forming a gate insulating layer containing an inorganic material over the gate electrode and the substrate, forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer, polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode as a mask, forming an organic polymer layer by removing a residue of the organic layer, being other than polymerized, forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed, forming source and drain electrodes by applying a composition containing a conductive material over the organic polymer layer, and forming a semiconductor layer over the gate electrode, the source and drain electrodes. | 2011-02-10 |
20110031495 | Liquid Crystal Display Device, Electronic Device Having the Same, and Manufacturing Method of the Same - A liquid crystal display device with improved productivity and a manufacturing method of the same. A liquid crystal display device according to the invention comprises in a region in which a scan line and a data line intersect with each other a first substrate comprising a first thin film transistor using either an amorphous semiconductor or an organic semiconductor for a channel portion, a second substrate, a liquid crystal layer interposed between the first substrate and the second substrate, and a third substrate comprising a second thin film transistor using a crystalline semiconductor for a channel portion. In the liquid crystal display device of the invention, a crystal grain boundary in the crystalline semiconductor extends along the flow of electrons or holes in the second thin film transistor, the first substrate is attached to the second substrate so that the first substrate is exposed, a first region for forming the second thin film transistor and a second region for forming an input terminal and an output terminal are formed on the third substrate, and the short side length of the third substrate is 1 to 6 mm and the short side length of the first region is 0.5 to 1 mm. | 2011-02-10 |
20110031496 | LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors in accordance with characteristics of the plural kinds of circuits are included. An inverted-coplanar thin film transistor including an oxide semiconductor layer which overlaps a source and drain electrode layers is used as a thin film transistor for a pixel, a channel-stop thin film transistor is used as a thin film transistor for a driver circuit, and a color filter layer is provided between the thin film transistor for a pixel and a light-emitting element so as to overlap the light-emitting element which is electrically connected to the thin film transistor for a pixel. | 2011-02-10 |
20110031497 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - One object of the present invention is to increase an aperture ratio of a semiconductor device. A pixel portion and a driver circuit are provided over one substrate. The first thin film transistor (TFT) in the pixel portion includes: a gate electrode layer over the substrate; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; source and drain electrode layers over the oxide semiconductor layer; over the gate insulating layer, the oxide semiconductor layer, the source and drain electrode layers, a protective insulating layer which is in contact with part of the oxide semiconductor layer; and a pixel electrode layer over the protective insulating layer. The pixel portion has light-transmitting properties. Further, a material of source and drain electrode layers of a second TFT in the driver circuit is different from a material of those of the first TFT. | 2011-02-10 |
20110031498 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a pixel portion having a first thin film transistor and a driver circuit having a second thin film transistor. Each of the first thin film transistor and the second thin film transistor includes a gate electrode layer, a gate insulating layer, a semiconductor layer, a source electrode layer, and a drain electrode layer. Each of the layers of the first thin film transistor has a light-transmitting property. Materials of the gate electrode layer, the source electrode layer and the drain electrode layer of the first thin film transistor are different from those of the second transistor, and each of the resistances of the second thin film transistor is lower than that of the first thin film transistor. | 2011-02-10 |
20110031499 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a semiconductor device in which characteristics of a driver circuit portion are improved while the aperture ratio of a pixel portion is increased. Alternatively, it is an object to provide a semiconductor device with low power consumption or to provide a semiconductor device in which the threshold voltage of a transistor can be controlled. The semiconductor device includes a substrate having an insulating surface, a pixel portion provided over the substrate, and at least some of driver circuits for driving the pixel portion. A transistor included in the pixel portion and a transistor included in the driver circuit are top-gate bottom-contact transistors. Electrodes and a semiconductor layer of the transistor in the pixel portion have light-transmitting properties. The resistance of electrodes in the driver circuit is lower than the electrodes included in the transistor in the pixel portion. | 2011-02-10 |
20110031500 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS - An organic light emitting display apparatus capable of preventing or reducing an IR drop and a decrease in a contrast ratio, and a method of manufacturing the same. The organic light emitting display apparatus includes: a substrate; a plurality of thin film transistors on the substrate; a plurality of organic light emitting diodes, each of the organic light emitting diodes including: a pixel electrode electrically connected to a corresponding one of the thin film transistors, a portion of an opposite electrode, the opposite electrode being above the substrate and covering all of the substrate, and an intermediate layer between the pixel electrode and the opposite electrode and comprising at least an organic light emitting layer; an opposite electrode bus line between adjacent pixel electrodes of the organic light emitting diodes on the opposite electrode of the organic light emitting diodes; and a black matrix surrounding the opposite electrode bus line. | 2011-02-10 |
20110031501 | DISPLAY DEVICE AND MANUFACTURING METHOD OF DISPLAY DEVICE - According to one feature of the present invention, a display device is manufactured according to the steps of forming a semiconductor layer; forming a gate insulating layer over the semiconductor layer; forming a gate electrode layer over the gate insulating layer; forming source and drain electrode layers in contact with the semiconductor layer; forming a first electrode layer electrically connected to the source or drain electrode layer; forming an inorganic insulating layer over part of the first electrode layer, the gate electrode layer, the source electrode layer, and the drain electrode layer; subjecting the inorganic insulating layer and the first electrode layer to plasma treatment; forming an electroluminescent layer over the inorganic insulating layer and the first electrode layer which are subjected to plasma treatment; and forming a second electrode layer over the electroluminescent layer. | 2011-02-10 |
20110031502 | LIGHT EMITTING DIODES INCLUDING INTEGRATED BACKSIDE REFLECTOR AND DIE ATTACH - Light emitting diodes include a silicon carbide substrate having first and second opposing faces, a diode region on the first face, anode and cathode contacts on the diode region opposite the silicon carbide substrate and a hybrid reflector on the silicon carbide substrate opposite the diode region. The hybrid reflector includes a transparent layer having an index of refraction that is lower than the silicon carbide substrate, and a reflective layer on the transparent layer, opposite the substrate. A die attach layer may be provided on the hybrid reflector, opposite the silicon carbide substrate. A barrier layer may be provided between the hybrid reflector and the die attach layer. | 2011-02-10 |
20110031503 | DEVICE WITH STRESSED CHANNEL - An FET device is disclosed which contains a source and a drain that are each provided with an extension. The source and the drain, and their extensions, are composed of epitaxial materials containing Ge or C. The epitaxial materials and the Si substrate have differing lattice constants, consequently the source and the drain and their extensions are imparting a state of stress onto the channel. For a PFET device the epitaxial material may be SiGe, or Ge, and the channel may be in a compressive state of stress. For an NFET device the epitaxial material may be SiC and the channel may be in a tensile state of stress. A method for fabricating an FET device is also disclosed. One may form a first recession in the Si substrate to a first depth on opposing sides of the gate. The first recession is filled epitaxially with a first epitaxial material. Then, a second recession may be formed in the Si substrate to a second depth, which is greater than the first depth. Next, one may fill the second recession with a second epitaxial material, which is the same kind of material as the first epitaxial material. The epitaxial materials are selected to have a different lattice constant than the Si substrate, and consequently a state of stress is being imparted onto the channel. | 2011-02-10 |
20110031504 | Apparatus and method for increasing thermal conductivity of a substrate - An apparatus and method is disclosed for increasing the thermal conductivity in a substrate of a non-wide bandgap material comprising the steps of directing a thermal energy beam onto the substrate in the presence of a first doping gas for converting a region of the substrate into a wide bandgap material to enhance the thermal conductivity of the substrate for cooling the non-wide bandgap material. In one example, the invention is incorporated into a carbon rich layer formed within the wide bandgap material. In another example, the invention is incorporated into a carbon rich layer formed within the wide bandgap material having basal planes disposed to extend generally outwardly relative to an external surface of the substrate to enhance the cooling of the substrate. | 2011-02-10 |
20110031505 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A silicon carbide semiconductor device having an active layer with reduced defect density which is formed on a substrate made of silicon carbide, and a method of manufacturing the same are provided. A semiconductor device includes a substrate made of silicon carbide and having an off angle of not less than 50° and not more than 65° with respect to a plane orientation; a buffer layer, and an epitaxial layer, a p-type layer and an n | 2011-02-10 |
20110031506 | SEMICONDUCTOR DEVICE - A MOSFET capable of achieving decrease in the number of steps in a manufacturing process and improvement in integration includes an SiC wafer composed of silicon carbide and a source contact electrode arranged in contact with the SiC wafer and containing titanium, aluminum, silicon, and carbon as well as a remaining inevitable impurity. The SiC wafer includes an n | 2011-02-10 |
20110031507 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A MOSFET representing a semiconductor device capable of achieving decrease in the number of steps in a manufacturing process and improvement in integration by including an electrode that can be in contact with any of a p-type SiC region and an n-type SiC region with contact resistance being sufficiently suppressed includes an n | 2011-02-10 |
20110031508 | Method and Apparatus for Manufacturing LED Devices using Laser Scribing - A method of manufacturing a light-emitting device using laser scribing to improve overall light output is disclosed. Upon placing a semiconductor wafer having light emitting diode (“LED”) devices separated by streets on a wafer chuck, the process arranges a first surface of semiconductor wafer containing front sides of the LED devices facing up and a second surface of semiconductor wafer containing back sides of the LED devices facing toward the wafer chuck. After aligning a laser device over the first surface of the semiconductor wafer above a street, the process is configured to focus a high intensity portion of a laser beam generated by the laser device at a location in a substrate closer to the back sides of the LED devices. | 2011-02-10 |
20110031509 | LED MODULE AND LIGHTING DEVICE USING THE SAME - The LED module comprises a flexible wiring substrate and surface mounting type LED packages. The flexible wiring substrate is formed at its surface with power supply terminals which comprises a first electrode pad and a second electrode pad, and is formed with a patterned wiring being electrically connected to the patterned wiring. The surface mounting type LED package comprises an LED chip and a mounting substrate. The mounting substrate is formed at its front surface with a recess, and its rear surface with a first connection electrode and the second connection electrode which are electrically connected to the first electrode pad and the second electrode pad, respectively when the mounting substrate is mounted on the flexible wiring substrate. The LED chip is disposed within the recess so as to receive the electrical current through the outside connection electrode and the power supply terminal. | 2011-02-10 |
20110031510 | ENCAPSULATED LENS STACK - A wafer scale package includes two or more substrates (wafers) that are stacked in an axial direction and a plurality of replicated optical elements. An optical device includes one or more optical elements. The wafer scale package and the device include one or more cavities that house the optical elements, while the end faces of the package or the device are planar and do not have replicated optical elements thereon. The number of double sided substrates is reduced, and design and manufacture of the optical device is improved. | 2011-02-10 |
20110031511 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light emitting diode display and a method of manufacturing the same are disclosed. The organic light emitting diode display includes a substrate, a first electrode positioned on the substrate, an organic light emitting layer positioned on the first electrode, and a second electrode positioned on the organic light emitting layer. The organic light emitting layer includes an inorganic oxide layer between a light emitting layer and a common layer. | 2011-02-10 |
20110031512 | THIN FILM TRANSISTOR SUBSTRATE - A thin film transistor substrate, capable of being assembled, is attached to a filter substrate to provide a semi-finished liquid crystal display panel. The thin film transistor substrate includes a base substrate with thin film transistors formed thereon, wiring assemblies formed on the substrate and electrically connected to the corresponding thin film transistors selectively, metal sheets formed on the base substrate, a protection layer formed on the thin film transistors, the wiring assemblies, and the metal sheets, and a buffer module formed on the protection layer. The buffer module is positioned above a projection of a cutting line onto the base substrate, and the surplus materials of the filter substrate are removed along the cutting line. | 2011-02-10 |
20110031513 | WATERPROOF SMD LED MODULE AND METHOD OF MANUFACTURING THE SAME - A surface-mount device (SMD) light emitting diode (LED) module includes a leadframe, an LED chip, a waterproof protective film and a sealing material. The leadframe includes a plurality of leads and the LED chip is fixed on one of the leads. The waterproof protective film covers the LED chip and a portion of the leadframe, and exposes a portion of the leadframe for connecting to a circuit board. The sealing material is also formed on the leadframe to cover the LED chip. In addition, a method of manufacturing the SMD LED module is provided. | 2011-02-10 |
20110031514 | DISPLAY APPARATUS - There is provided a display apparatus that can improve the protective function and light utilization efficiency of organic EL devices and that has a simple structure. The display apparatus includes a plurality of organic EL devices formed on a substrate and a protective layer formed on the organic EL devices. The protective layer includes a first protective layer made of an inorganic material, a second protective layer made of a resin and having a microlens formed therein, and a third protective layer made of an inorganic material. | 2011-02-10 |
20110031515 | ORGANIC LIGHT-EMITTING DEVICE - The organic light-emitting device of the present invention includes a plurality of organic light-emitting elements including an organic light-emitting element showing a first emission color and at least one organic light-emitting element showing a different emission color from the first emission color, each of the organic light-emitting elements including: a first electrode having a reflective surface; a second electrode placed on a light extraction side and including a semi-transparent layer; an organic compound layer including a light-emitting layer and formed between the first electrode and the second electrode; and a micro cavity structure for resonating light emitted from the light-emitting layer between the reflective surface and the semi-transparent layer, wherein the semi-transparent layer in the organic light-emitting element showing the first emission color is different in thickness and/or material from the semi-transparent layer in the at least one organic light-emitting element showing the different emission colors. | 2011-02-10 |
20110031516 | LED WITH SILICONE LAYER AND LAMINATED REMOTE PHOSPHOR LAYER - A method for fabricating a light emitting device is described where an array of flip-chip light emitting diode (LED) dies are mounted on a submount wafer. Over each of the LED dies is simultaneously molded a hemispherical first silicone layer. A preformed flexible phosphor layer, comprising phosphor powder infused in silicone, is laminated over the first silicone layer to conform to the outer surface of the hemispherical first silicone layer. A silicone lens is then molded over the phosphor layer. By preforming the phosphor layer, the phosphor layer may be made to very tight tolerances and tested. By separating the phosphor layer from the LED die by a molded hemispherical silicone layer, color vs. viewing angle is constant, and the phosphor is not degraded by heat. The flexible phosphor layer may comprise a plurality of different phosphor layers and may comprise a reflector or other layers. | 2011-02-10 |
20110031517 | METHOD FOR FABRICATING PIXEL STRUCTURE - A fabricating method for a pixel structure is provided. First, a substrate having an active device and a capacitor electrode line thereon is provided. Next, a passivation layer is formed on the substrate to cover the active device. After that, a light shielding layer is formed on the passivation layer to define a unit area. Next, an ink-jet printing is performed to form a color filter pattern within the unit area defined by the light shielding layer. After that, a portion of the color filter pattern is removed to form a first hole above active device. Next, the passivation layer exposed by the first hole is removed so as to form a contact hole exposing a portion of the active device. After that, a pixel electrode is formed on the color filter pattern to fill into the contact hole so as to electrically connect with active device. | 2011-02-10 |