06th week of 2012 patent applcation highlights part 39 |
Patent application number | Title | Published |
20120034657 | THROMBOPOIETIC COMPOUNDS - The invention relates to the field of compounds, especially peptides or polypeptides, that have thrombopoietic activity. The peptides and polypeptides of the invention may be used to increase platelets or platelet precursors (e.g., megakaryocytes) in a mammal. | 2012-02-09 |
20120034658 | Methods for Creating Color Variation in Anthocyanins Produced by Cell Culture - Disclosed are methods for obtaining blue anthocyanin pigments and compositions including such pigments. This blue anthocyanin is present at an acidic pH (where anthocyanins are most stable) and may be used as a natural color additive. The methods can include cultivating a plant callus from a plant capable of producing anthocyanin in which the callus is treated with a blue anthocyanin-generating agent at a concentration sufficient to generate callus with blue anthocyanin pigments. The method can also include recovering the blue anthocyanin pigments from the culture. In an example, the blue anthocyanin-generating agent is ammonium molybdate. | 2012-02-09 |
20120034659 | NEUTRAL pH SACCHARIFICATION AND FERMENTATION - Embodiments of the present disclosure relate to a process for producing downstream products, such as fermentable sugars and end products, from a starch substrate by saccharification and/or fermentation. The saccharification is effectively catalyzed by a glucoamylase at a pH in the range of 5.0 to 8.0. At a pH of 6.0 or above, the glucoamylase possesses at least 50% activity relative to its maximum activity. The saccharification and fermentation may be performed as a simultaneous saccharification and fermentation (SSF) process. | 2012-02-09 |
20120034660 | PROCESS FOR PRODUCING OPTICALLY ACTIVE SUCCINIMIDE DERIVATIVES AND INTERMEDIATES THEREOF - A process for producing optically active succinimide derivatives as key intermediates of (3R)-2′-(4-bromo-2-fluorobenzyl)spiro{pyrrolidine-3,4′(1H)-pyrrolo[1,2-a]pyrazine}-1′,2,3′,5(2′H)-tetraone, which comprises the following reaction steps. | 2012-02-09 |
20120034661 | STRAINS FOR THE PRODUCTION OF FLAVONOIDS FROM GLUCOSE - The invention relates to the production of flavonoids and flavonoid precursors in cells through recombinant expression of tyrosine ammonia lyase (TAL), 4-coumarate:CoA ligase (4CL), chalcone synthase (CHS), and chalcone isomerase (CHI). | 2012-02-09 |
20120034662 | CO-CULTURING ALGAL STRAINS TO PRODUCE FATTY ACIDS OR HYDROCARBONS - The present invention provides methods and compositions for production of algal-based medium chain fatty acids and hydrocarbons. | 2012-02-09 |
20120034663 | METHODS AND SYSTEMS FOR BIOMASS CONVERSION TO CARBOXYLIC ACIDS AND ALCOHOLS - The disclosure includes a method, process and apparatus for the conversion of biomass to carboxylic acids and/or primary alcohols. The system may include a pretreatment/fermentation subsystem operable to produce a fermentation broth containing carboxylic acid salts from biomass, such as lignocellulosic biomass. The system may also include a dewatering subsystem operable to remove excess water from the fermentation broth to produce a concentrated product. The system may also includes an acid springing subsystem operable to produce a mixed carboxylic acid product. The system may also include a hydrogenation subsystem operable to produce an alcohol mixture, such as a mixture containing primary alcohols. Methods of operating this system or other systems to obtain a carboxylic acid or alcohol mixture are also provided. | 2012-02-09 |
20120034664 | PROCESS TO PRODUCE ORGANIC COMPOUNDS FROM SYNTHESIS GASES - At least one isolated microorganism and a fermentation method to convert hydrogen gas, carbon dioxide gas, and/or carbon monoxide gas to a lower alkyl alcohol and/or carboxylic acid and to produce at least 2% by volume of the lower alkyl alcohol or carboxylic acid in an aqueous-based medium. | 2012-02-09 |
20120034665 | ENZYMATIC METHOD FOR PRODUCING ALDEHYDES - The invention relates to methods for producing aldehydes and the oxidation and reduction products thereof. | 2012-02-09 |
20120034666 | METHODS OF INCREASING DIHYDROXY ACID DEHYDRATASE ACTIVITY TO IMPROVE PRODUCTION OF FUELS, CHEMICALS, AND AMINO ACIDS - The present invention is directed to recombinant microorganisms comprising one or more dihydroxyacid dehydratase (DHAD)-requiring biosynthetic pathways and methods of using said recombinant microorganisms to produce beneficial metabolites derived from said DHAD-requiring biosynthetic pathways. In various aspects of the invention, the recombinant microorganisms may be engineered to overexpress one or more polynucleotides encoding one or more Nfs1 proteins or homologs thereof and/or one or more polynucleotides encoding one or more Isd11 proteins or homologs thereof. In some embodiments, the recombinant microorganisms may comprise a cytosolically localized DHAD enzyme. In additional embodiments, the recombinant microorganisms may comprise a mitochondrially localized DHAD enzyme. In various embodiments described herein, the recombinant microorganisms may be microorganisms of the | 2012-02-09 |
20120034667 | METHOD FOR RECOVERING AND PRODUCING ETHANOL AND OIL - To provide a method for producing an ethanol which facilitates the processing of a solid component as a residue generated upon processing, while improving the recovery rate of heat energy contained in leftover food. The method for recovering and producing ethanol and oil is a method for producing ethanol by saccharification, fermentation, and distillation of leftover food. In this method, a three-phase centrifuge for performing separation into three phases of an oil component, an aqueous solution component, and a solid component is used in a step of solid-liquid separation of any one of a saccharified liquid, a fermented liquid, and a distillation waste liquid. | 2012-02-09 |
20120034668 | NOVEL NITRATE REDUCTASE FUSION PROTEINS AND USES THEREOF - The present invention relates to a novel fusion protein comprising a nitrate reductase (NR) and a truncated hemoglobin N (trHbN) domain. The fusion protein may be used for bioremediation of nitric oxide. | 2012-02-09 |
20120034669 | PROCESS FOR PRODUCING USEFUL SUBSTANCE - The present invention provides a process for producing a useful substance which comprises culturing a transformant obtained by transforming a microorganism capable of producing the useful substance with a DNA encoding a protein in a medium, wherein the protein has an activity to improve growth of a high concentration oxygen-requiring microorganism under low oxygen concentration; forming and accumulating the useful substance in a culture; and collecting the useful substance from the culture. | 2012-02-09 |
20120034670 | ORGANIC-INORGANIC COMPOSITE MATERIAL AND PROCESS FOR PRODUCING SAME - Disclosed is an organic-inorganic composite material obtained by chemically modifying a microorganism-derived ceramic material with an organic group, and a process for producing the organic-inorganic composite material. The process is characterized by reacting a microorganism-derived ceramic material with at least one compound selected from the group consisting of silane coupling agents represented by formula (1), silane coupling agents represented by formula (2), and titanate coupling agents represented by formula (3). The organic-inorganic complex can be used in applications for immobilized catalysts and immobilized enzyme catalysts. | 2012-02-09 |
20120034671 | Protein Matrix For Light-Initiated Electron Transfer - The present invention provides selective modification of polypeptide sequences with electron transfer moieties. The resulting polypeptide assemblies represent a novel class of electron transfer complexes that are capable of transferring electrons over very long distances at fast rates. These complexes possess unique structural features which enable the production of bioconductors and photoactive probes. | 2012-02-09 |
20120034672 | SUPERLUMINESCENT LUCIFERASE VARIANT WITH PROLONGED BIOLUMINESCENCE - This invention provides a genetically modified marine luciferase such as | 2012-02-09 |
20120034673 | Isolated plant deoxyhypusine synthase and nucleotides encoding same - Regulation of expression of programmed cell death, including senescence, in plants is achieved by integration of a gene or gene fragment encoding senescence-induced deoxyhypusine synthase, senescence-induced eIF-5A or both into the plant genome in antisense orientation. Plant genes encoding senescence-induced deoxyhypusine synthase and senescence-induced eIF-5A are identified and the nucleotide sequences of each, alone and in combination are used to modify senescence in transgenic plants. | 2012-02-09 |
20120034674 | METHOD OF PRODUCING RECOMBINANT ADAMTS13 IN CELL CULTURE - Among other aspects, the present invention relates to cell culture conditions for producing high molecular weight vWF, in particular, highly multimericWF with a high specific activity and ADAMTS13 with a high specific activity. The cell culture conditions of the present invention can include, for example, a cell culture medium with an increased copper concentration and/or cell culture supernatant with a low ammonium (NH | 2012-02-09 |
20120034675 | Tyrosinase mutant and methods of use thereof - The present invention describes a novel tyrosinase protein and methods of use thereof. Specifically, the invention provides tyrosinase derived peptides and polynucleotides, and their ability to elicit an immune response and treat a melanoma. | 2012-02-09 |
20120034676 | SENECA VALLEY VIRUS BASED COMPOSITIONS AND METHODS FOR TREATING DISEASE - The present invention relates to a novel RNA | 2012-02-09 |
20120034677 | MICROORGANISM CULTURE DEVICE AND METHOD OF OPERATION THEREOF - The invention is directed to a microorganism culture device ( | 2012-02-09 |
20120034678 | Diaryl Ethers - Compounds of the formula I: | 2012-02-09 |
20120034679 | METHOD AND APPARATUS FOR CULTIVATION OF ALGAE AND CYANOBACTERIA - The invention relates to a method of cultivation of algae or cyanobacteria in the presence of a luminous material that converts light of a first wavelength to a second wavelength more suitable for use in photosynthesis by the algae or cyanobacteria, and apparatus for performing the method. In one embodiment the apparatus ( | 2012-02-09 |
20120034680 | Process For Treating Carbon Dioxide Containing Gas - A process is disclosed for recycling carbon dioxide emissions from a fossil-fuel power plant into useful carbonated species The process primarily comprises the steps of: a) burning the fossil fuel, thereby generating heat and a hot exhaust gas containing CO | 2012-02-09 |
20120034681 | DIGESTER FOR HIGH SOLIDS WASTE - A digester with separate stages for hydrolysis and methanogenesis is disclosed. The digester includes a leachate bay reactor, which may be configured as modular, multi-bay units. Waste material is added to the leachate bay reactor. A leachate storage tank is fluidically connected to the leachate bay reactor, which facilitates hydrolysis. Leachate from the leachate storage tank is recirculated through the leachate bay reactor. A high rate methanogenic reactor is fluidically connected to the leachate storage tank to cycle the leachate in a fixed film environment for biogas production from solubilized organic matter. The reactor may be operated in an anaerobic digestion mode, or a dual aerobic-anaerobic digestion mode. The reactor may also include a struvite system having a crystallizer unit and a separation unit to reduce ammonium and phosphate accumulation during operation. | 2012-02-09 |
20120034682 | Process for Separating High Purity Germ and Bran from Corn - A semi-wet process for refining corn to make a feedstock for ethanol production. Corn is tempered at a moisture content from about 20-25% by weight for a very short time followed by grinding. The ground corn is not dried and cooled before further processing. It is graded and then ground and sifted to make an endosperm fraction and a high purity fraction of germ and bran. The fraction of germ and bran can be separated in a one or two stage dry separation process or in a wet separation process. In the wet separation process, the fraction of germ and bran is enzymatically steeped, dewatered and then separated in hydrocyclones to produce a germ fraction and a bran fraction. | 2012-02-09 |
20120034683 | PETROLEUM BIOCONVERSION OF ORGANIC ACIDS TO PREVENT REFINERY CORROSION - The present invention relates to the use of microorganisms (biocatalysts), or catalysts derived from these organisms (enzymes), to improve the quality of crude oil and bitumen as an attractive alternative to current upgrading methods. The invention identifies and characterizes the microorganism species, in particular, | 2012-02-09 |
20120034684 | MAGNETIC IMMUNOSENSOR WITH TRENCH CONFIGURATION AND METHOD OF USE - The present invention provides apparatus and methods for the rapid determination of analytes in liquid samples by immunoassays incorporating magnetic capture of beads on a sensor capable of being used in the point-of-care diagnostic field. | 2012-02-09 |
20120034685 | ASSAY SYSTEMS FOR DETERMINATION OF SOURCE CONTRIBUTION IN A SAMPLE - The present invention provides assay systems and methods for detection of copy number variation at one or more loci and polymorphism detection at one or more loci in a mixed sample from an individual. | 2012-02-09 |
20120034686 | DEVICES AND METHODS FOR DUAL EXCITATION RAMAN SPECTROSCOPY - Spectroscopic analysis systems and methods for analyzing samples are disclosed. An analysis system may contain an electromagnetic radiation source to provide radiation, a spectroscopic analysis chamber to perform a coherent Raman spectroscopy (e.g., stimulated Raman or coherent anti-Stokes Raman spectroscopy), and a radiation detector to detect radiation based on the spectroscopy. The chamber may have a resonant cavity to contain a sample for analysis, at least one window to the cavity to transmit the first radiation into the cavity and to transmit a second radiation out, a plurality of reflectors affixed to a housing of the cavity to reflect radiation of a predetermined frequency, the plurality of reflectors separated by a distance that is sufficient to resonate the radiation. The spectroscopic analysis system may be coupled with a nucleic acid sequencing system to receive a single nucleic acid derivative in solution and identify the derivative to sequence the nucleic acid. | 2012-02-09 |
20120034687 | PROTECTION OF BIOANALYTICAL SAMPLE CHAMBERS - An apparatus for performing bioanalytic processing and analysis, a bioanalytical reaction device, and a cartridge thereof are provided. The cartridge contains a housing and at least one sample chamber in a platform for storing biological samples, which the bioanalytical reaction device can process and analyze. The platform is movably connected to the housing such that the platform is movable between a stowed position, in which the sample chamber is protected by the housing, and an extended position, in which the sample chamber is outside of the housing. The bioanalytical reaction device includes an actuation device for moving the platform between the stowed and extended positions. | 2012-02-09 |
20120034688 | True nucleic acid amplification - A system and method directed to DNA amplification with optional in situ purification, sequencing and/or detection, or a system compatible with integrated, post-amplification purification and or sequencing by capillary electrophoresis and other methods. The device is a single, helical channel formed of fused silica with heat zones defined about fixed arcs of the helix inner and/or outer circumference. The length of the helical channel and the cycle number and dwell time may be varied by altering the pitch of the helix within the cylindrical substrate. In another embodiment, the heat zone arcs lengths are also variable. In still another embodiment, multiple helical channels are available in parallel within the same structure. Separation channels may be integrated on the device for post-amplification purification and/or sequencing. One or more detection schemes may be provided on the device or seamlessly integrated with the device, for monitoring amplification and/or detecting specific products. | 2012-02-09 |
20120034689 | MYCOBACTERIAL ANTIGENS EXPRESSED DURING LATENCY - A method is provided for identifying mycobacterial genes that are induced or up-regulated under culture conditions that are nutrient-starving and which maintain mycobacterial latency, said conditions being obtainable by batch fermentation of a mycobacterium for at least 20 days post-inoculation, when compared with culture conditions that are not nutrient-starving and which support exponential growth of said mycobacterium. Said induced or up-regulated genes form the basis of nucleic acid vaccines, or provide targets to allow preparation of attenuated mycobacteria for vaccines against mycobacterial infections. Similarly, peptides encoded by said induced or up-regulated genes are employed in vaccines. In a further embodiment, the identified genes/peptides provide the means for identifying the presence of a mycobacterial infection in a clinical sample by nucleic acid probe or antibody detection. | 2012-02-09 |
20120034690 | Cell lines producing blocking antibodies to human RANKL - Described herein are cell lines and methods for preparing antibodies that bind RANKL, including cell lines that produce blocking antibodies to human RANKL. | 2012-02-09 |
20120034691 | GENETICALLY ENCODED CALCIUM INDICATORS AND METHODS OF USE - Provided herein are nucleic acid sequences and polypeptides encoding a genetically encoded calcium indicator (GECI). Also provided are vectors and cells comprising the nucleic acid sequences and/or polypeptides. Kits comprising the nucleic acid sequences, polypeptides, vectors, cells and combinations thereof are also provided. Also provided herein are methods of screening for G-protein coupled receptor (GPCR) agonists and antagonists and methods of monitoring neural activity using the GECIs. | 2012-02-09 |
20120034692 | ENDOCRINE PRECURSOR CELLS, PANCREATIC HORMONE-EXPRESSING CELLS AND METHODS OF PRODUCTION - Disclosed herein are cell cultures and enriched cell populations of endocrine precursor cells, immature pancreatic hormone-expressing cells and mature pancreatic hormone-expressing cells. Also disclosed herein are methods of producing such cell cultures and cell populations. | 2012-02-09 |
20120034693 | RECOMBINANT VECTOR AND USE IN GENE THERAPY - A recombinant vector for delivering A3G genes into human cells comprising (i) a gene expression block including an A3G gene selected from a wild type A3G gene represented by SEQ ID NO: 1 and a mutant A3G gene and (ii) a group of elements from a modified lentiviral vector including lentiviral regions of packaging signal (ψ, psi), LTRs, RRE, and PBS; wherein said A3G gene is operably linked to the packaging signal (ψ, psi), LTRs, RRE, and PBS. | 2012-02-09 |
20120034694 | CELL CULTURE SUPPORT AND CELL CULTURE METHOD - The present invention relates to a cell culture support for culturing mesenchymal stem cells, which includes en upper surface including a plurality of wells, in which the upper surface has a root mean square roughness Rq of 100 to 280 nm and a linear density of 1.6 to 10 per 1 μm length. | 2012-02-09 |
20120034695 | TISSUE/CELL CULTURING SYSTEM AND RELATED METHODS - A system for culturing cells and/or tissue includes a tissue/cell culture chamber including a tissue/cell culture membrane, at least one collapsible valve fluidly coupled with the tissue/cell culture chamber, a pump fluidly coupled with the tissue/cell culture chamber, and a flow loop including the pump, chamber, and collapsible valve fluidly coupled together. | 2012-02-09 |
20120034696 | Electrokinetically-altered fluids comprising charge-stabilized gas-containing nanostructures - Particular aspects provide compositions comprising an electrokinetically altered oxygenated aqueous fluid, wherein the oxygen in the fluid is present in an amount of at least 25 ppm. In certain aspects, the electrokinetically altered oxygenated aqueous fluid comprises electrokinetically modified or charged oxygen species present in an amount of at least 0.5 ppm. In certain aspects the electrokinetically altered oxygenated aqueous fluid comprises solvated electrons stabilized by molecular oxygen, and wherein the solvated electrons present in an amount of at least 0.01 ppm. In certain aspects, the fluid facilitates oxidation of pyrogallol to purpurogallin in the presence of horseradish peroxidase enzyme (HRP) in an amount above that afforded by a control pressure pot generated or fine-bubble generated aqueous fluid having an equivalent dissolved oxygen level, and wherein there is no hydrogen peroxide, or less than 0.1 ppm of hydrogen peroxide present in the electrokinetic oxygen-enriched aqueous fluid. | 2012-02-09 |
20120034697 | IN VITRO METHODS FOR THE INDUCTION AND MAINTENANCE OF PLANT CELL LINES AS SINGLE SUSPENSION CELLS WITH INTACT CELL WALLS, AND TRANSFORMATION THEREOF - The subject invention provides simple and consistent methods to break suspension cell aggregates to single cells with intact primary cell walls. The subject invention relates in part to cell separation of suspension cell aggregates cultured in medium containing pectin-degrading enzymes or tubulin de-polymerizing compounds including colchicine. The subject invention also relates to novel uses of compounds for such purposes. Another aspect of the subject invention relates to transformation of the subject, isolated cells. Such processes simplify and integrate single-cell-based transformation and selection processes into transgenic and transplastomic event-generation work processes. The subject invention also removes technical constraints and produces marker-free and uniformly expressing transgenic lines in a high throughput fashion to support various needs of animal health, biopharma, and trait and crop protection platforms. | 2012-02-09 |
20120034698 | COMPOSITIONS AND METHODS FOR INCREASING OIL CONTENT IN ALGAE - The present invention provides methods and compositions for increasing oil content in algae. More particularly, the present invention relates to enhancement of phytohormone activity in algae, by genetic transformation thereof or by supplementing the algal growth medium with phytohormones, to maximize the production of oil within the algae cells. | 2012-02-09 |
20120034699 | NUCLEIC ACID-LABELED TAGS ASSOCIATED WITH ODORANT - A nucleic acid tag comprising a nucleotide-support platform attached to a nucleic acid molecule, an odorant, and an encapsulant. Unique nucleic acid-containing tags containing an odorant are seeded at one or more geographic locations. Using odorant-detection systems, the person or object of interest is examined for the presence of one or more of the odorant, thereby revealing the presence of the seeded nucleic acids and eliminating the expense and time associated with unnecessary screening. The geographic location associated with each detected nucleic acid is used to backtrack the item's path or extrapolate a probable point of origin. | 2012-02-09 |
20120034700 | METHODS TO RADIOLABEL NATURAL ORGANIC MATTER BY REDUCTION WITH HYDROGEN LABELED REDUCING AGENTS - Methods to radiolabel natural organic matter by reduction with a hydrogen labeled reducing agent, and compositions, are provided. | 2012-02-09 |
20120034701 | DEVICE FOR ASSAY OF A LIQUID SAMPLE - Device and detection system comprising two polarising elements and a measuring zone located between said polarising elements, wherein the measuring zone is being bounded on one side by the first polarising element. The device further comprises an inlet reservoir, an outlet reservoir and a flow channel. Method of fabricating said device, comprising the step of depositing an antibody into the measuring zone. | 2012-02-09 |
20120034702 | METHOD AND APPARATUS FOR MEASURING FLUORESCENCE IN LIQUIDS - A method of measuring the fluorescence of a fluorescent marker compound dissolved or dispersed in a bulk material includes: (a) measuring a characteristic of the fluorescence of a mixture of said bulk material and said fluorescent marker compound; (b) quenching the fluorescence of the fluorescent marker compound to produce a quenched mixture; (c) measuring the characteristic of the fluorescence of the quenched mixture; (d) comparing the fluorescent characteristic of the mixture with the fluorescent characteristic of the quenched mixture; and (e) correcting the measured fluorescent emission characteristic for the effects of the absorbance of the bulk material. The measurement may be further corrected to account for the absorbance of the material which is also known to have an effect on the measured fluorescence. A method of tagging and identifying a bulk material with a fluorescent marker compound, and an apparatus for carrying out the methods are also described. | 2012-02-09 |
20120034703 | Devices, Systems and Methods for Processing of Magnetic Particles - Devices, systems and methods for separation of magnetic particles with either hand held devices or automated instruments. Specifically, the production of magnetic fields for the separation of the particles within containers such as microtiter plates with a magnetic field that is substantially consistent for each well. Certain embodiments produce a magnetic field that is substantially uniform across each well bottom, while other embodiments produce a magnetic field that is stronger toward the outer region of each well. | 2012-02-09 |
20120034704 | DISSOLUTION TEST EQUIPMENT - Apparatus and method for dissolution testing of active substances in various dosage forms is provided. The apparatus has filtration cells equipped and configured to simulate bodily functions, operate continuously and facilitate testing various types of dosage forms including, but not limited to, tablets, capsules and those having non-disintegrating substrates. | 2012-02-09 |
20120034705 | FLUID PROCESSING AND CONTROL - A fluid control and processing system for controlling fluid flow among a plurality of chambers comprises a body including a fluid processing region continuously coupled fluidicly with a fluid displacement region. The fluid displacement region is depressurizable to draw fluid into the fluid displacement region and pressurizable to expel fluid from the fluid displacement region. The body includes at least one external port. The fluid processing region is fluidicly coupled with the at least one external port. The fluid displacement region is fluidicly coupled with at least one external port of the body. The body is adjustable with respect to the plurality of chambers to place the at least one external port selectively in fluidic communication with the plurality of chambers. | 2012-02-09 |
20120034706 | METHOD FOR ASSESSING INFLAMMATORY CONDITION - Provided a method for correctly assessing an inflammatory condition of a patient who is receiving a therapy with an IL-6 inhibitor. The method for assessing an inflammatory condition of a patient who is receiving an IL-6 inhibitor, including determining a PTX3 level of a sample derived from a patient who is receiving an IL-6 inhibitor. | 2012-02-09 |
20120034707 | ATOMICALLY PRECISE NANORIBBONS AND RELATED METHODS - Disclosed are atomically precise nanoribbons formed by gradient-driven catalytic etching of crystalline substrates to produce edges formed along specific crystallographic axes by thermally-activated particles. Also provided are related methods for fabrication of these nanoribbon structures. Further provided are devices and related methods for power generation and for detection of specific targets using the disclosed structures. | 2012-02-09 |
20120034708 | Sample Carrier for Effecting Chemical Assays - There is disclosed apparatus and a system for effecting testing on a sample, such as for medical testing. The apparatus includes a sample chip ( | 2012-02-09 |
20120034709 | SURFACE MODIFIED SUBSTRATE, BIOTIP AND A METHOD FOR PRODUCING THEREOF - A surface modified substrate is produced by a method including reacting a substrate having a reactive functional group on a surface thereof with a functional group being reactive to the reactive functional group, and reacting the substrate with a compound represented by the general formula, | 2012-02-09 |
20120034710 | Detection of Degradation Products of NT-proBNP - A method for determining the amount of NT-proBNP in blood samples from animals. The method includes detecting degradation products of NT-proBNP by various methods, including using antibodies, kits and device. | 2012-02-09 |
20120034711 | Digital immunochromatographic test strip for semi-quantitative detection of aflatoxin B1 and preparation method thereof - The present invention belongs to the field of biological detection. Multi-line immunochromatographic test strip for semi-quantitative detection of aflatoxin B | 2012-02-09 |
20120034712 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method for manufacturing a semiconductor device including a ferroelectric capacitor formed over a semiconductor substrate, wherein the ferroelectric capacitor including a lower electrode, a ferroelectric film formed on the lower electrode, and an upper electrode formed on the ferroelectric film, and the upper electrode including a first conductive film formed of a first conductive noble metal oxide, and a second conductive film formed of a metal nitride compound formed on the first conductive film. | 2012-02-09 |
20120034713 | PROCESS, VOLTAGE, TEMPERATURE SENSOR - An integrated circuit includes a process sensor, a temperature sensor, and a voltage sensor. The process sensor is configured to sense a process parameter indicative of a semiconductor process by which the integrated circuit is formed and, based upon the sensed process parameter, to provide a characterization of the semiconductor process to the output of the process sensor. The temperature sensor is configured to provide an indication of a temperature of the integrated circuit to an output of the temperature sensor and the voltage sensor is configured to provide an indication of a power supply voltage level of the integrated circuit to an output of the voltage sensor. The output of the process sensor is coupled to at least one of the temperature sensor and the voltage sensor to compensate at least one of the indication of the temperature and the indication of the power supply voltage level. | 2012-02-09 |
20120034714 | WAFER-LEVEL LIGHT EMITTING DIODE STRUCTURE, LIGHT EMITTING DIODE CHIP, AND METHOD FOR FORMING THE SAME - A method for fabricating a wafer-level light emitting diode structure is provided. The method includes: providing a substrate, wherein a first semiconductor layer, a light emitting layer, and a second semiconductor layer are sequentially disposed on the substrate; subjecting the first semiconductor layer, the light emitting layer, and the second semiconductor layer with a patterning process to form a first depressed portion, a second depressed portion, a stacked structure disposed on the second depressed portion and a remained first semiconductor layer disposed on the depressed portion, wherein the stacked structure comprises a patterned second semiconductor layer, a patterned emitting layer, and a patterned first semiconductor layer; forming a first electrode on the remained first semiconductor layer of the first depressed portion; and forming a second electrode correspondingly disposed on the patterned second semiconductor layer of the second depressed portion. | 2012-02-09 |
20120034715 | Methods of fabricating a light-emitting device - Methods of fabricating of a light-emitting device are provided, the methods include forming a plurality of light-emitting units on a substrate, measuring light characteristics of the plurality of light-emitting units, respectively, depositing a phosphor layer on the plurality of light-emitting units using a printing method, and cutting the substrate to separate the plurality of light-emitting units into unit by unit. The phosphor layer is adjustably deposited according to the measured light characteristics of the plurality of light-emitting units. | 2012-02-09 |
20120034716 | METHOD FOR MANUFACTURING LIGHT EMITTING DIODE - A method for manufacturing a light emitting diode includes steps: providing a base having leads formed thereon; fixing a light emitting die on the leads; disposing a glass encapsulant on the base; co-firing the encapsulant with the base to fix them together. The base is made of silicon or ceramic. The encapsulant has a cover covering the light emitting die received in a groove of the base and a positioning plate fittingly engaging into the groove in one embodiment. The encapsulant has a cavity receiving the light emitting die to cover the light emitting die fixed on a top face of the base in another embodiment. Various mechanisms are used to protect the light emitting die during co-firing of the encapsulant and the base. | 2012-02-09 |
20120034717 | LIGHT EMITTING DIODE FOR HARSH ENVIRONMENTS - A light emitting diode for harsh environments includes a substantially transparent substrate, a semiconductor layer deposited on a bottom surface of the substrate, several bonding pads, coupled to the semiconductor layer, formed on the bottom surface of the substrate, and a micro post, formed on each bonding pad, for electrically connecting the light emitting diode to a printed circuit board. An underfill layer may be provided between the bottom surface of the substrate and the top surface of the printed circuit board, to reduce water infiltration under the light emitting diode substrate. Additionally, a diffuser may be mounted to a top surface of the light emitting diode substrate to diffuse the light emitted through the top surface. | 2012-02-09 |
20120034718 | VERTICAL DEEP ULTRAVIOLET LIGHT EMITTING DIODES - A vertical geometry light emitting diode with a strain relieved superlattice layer on a substrate comprising doped Al | 2012-02-09 |
20120034719 | METHOD OF FABRICATING A PIXEL ARRAY SUBSTRATE - A method of fabricating a pixel array substrate is disclosed. The reflective pixel array substrate can be made by utilizing five photo masks only. The reflective pixel array substrate includes a substrate, a thin film transistor, a reflective electrode, an insulating layer and numerous protruding bumps. The step between the protrusion bump and the substrate cause the reflective electrode thereon to have a corrugated structure. The gate electrode of the thin film transistor and the protruding bumps are made of a same conductive layer. The drain electrode connects the reflective electrode, and the drain electrode and the reflective electrode are made of a same conductive layer. | 2012-02-09 |
20120034720 | Vertical cavity surface emitting laser and method of manufacturing the same - A Vertical Cavity Surface Emitting Laser capable of decreasing the lowering of the yield due to displacement and separation of a pedestal without enormous increase of the threshold value and more difficult manufacturing process is provided. A base of a mesa spreads over the top face of a lower DBR layer. The base is a non-flat face in which end faces of a plurality of layers are exposed. The non-flat face is generated due to etching unevenness in forming the mesa, and is in a state of a step in which end faces of a low-refractive index layer and a high-refractive index layer included in the lower DBR layer are alternatively exposed. At least one of the layers exposed in the non-flat face in the plurality of low-refractive index layers included in the lower DBR layer is an oxidation inhibition layer. | 2012-02-09 |
20120034721 | SEMI-TRANSMISSIVE-TYPE LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME - A semi-transmissive-type liquid crystal display device is provided which is capable of preventing an electric erosion reaction between a reflective film made of Al (aluminum) or an Al alloy and a transparent electrode film made of ITO or a like (Indium Tin Oxide) and of inhibiting occurrence of a flicker caused by a residual DC (Direct Current) voltage in the reflective film. In the semi-transmissive-type of a liquid crystal display device, a transmissive region to provide light from a backlight source and a reflective region to receive ambient light are placed in a pixel region and a transparent electrode film is formed above a reflective film formed in the reflective region on an active matrix substrate with a second passivation film being interposed between the reflective film and the transparent electrode film. | 2012-02-09 |
20120034722 | MANUFACTURING METHOD FOR A THIN FILM TRANSISTOR-LIQUID CRYSTAL DISPLAY - A pixel unit of TFT-LCD array substrate and a manufacturing method thereof is disclosed. In the manufacturing method, besides a first insulating layer and a passivation layer, a second insulating layer is adopted to cover the gate island, and forms an opening on the gate island to expose the channel region, the source region and the drain region of the TFT. A gray tone mask and a photoresist lifting-off process are utilized to perform patterning, so that the TFT-LCD array substrate can be achieved with just three masks. | 2012-02-09 |
20120034723 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method of forming a display device including source/drain electrodes on a substrate, a pixel electrode, an insulating partition wall layer, a channel-region semiconductor layer. The source/drain electrodes and the pixel electrode are formed on the substrate and in contact with each other. The insulating partition wall layer is formed on the substrate and provided with a first opening extending to between the source electrode and the drain electrode and a second opening formed on the pixel electrode and extending to the pixel electrode. The channel-region semiconductor layer is formed on the bottom of the first opening. The insulating film is formed on the partition wall layer so as to cover the first opening including the channel-region semiconductor layer. The oriented film covers the first opening from above the insulating film and the second opening from the pixel electrode. | 2012-02-09 |
20120034724 | METHOD AND APPARATUS FOR MEMS OSCILLATOR - A resonator includes a CMOS substrate having a first electrode and a second electrode. The CMOS substrate is configured to provide one or more control signals to the first electrode. The resonator also includes a resonator structure including a silicon material layer. The resonator structure is coupled to the CMOS substrate and configured to resonate in response to the one or more control signals. | 2012-02-09 |
20120034725 | METHOD FOR TEXTURING SILICON WAFERS, TREATMENT LIQUID THEREFOR, AND USE - In a method for the treatment of silicon wafers in the production of solar cells, a treatment liquid is applied to the surface of the silicon wafers for the purpose of texturization thereof. The treatment liquid contains, as additive, ethyl hexanol or cyclohexanol in an amount ranging from 0.5% to 3%, by weight. | 2012-02-09 |
20120034726 | BUFFER LAYER DEPOSITION FOR THIN-FILM SOLAR CELLS - Improved methods and apparatus for forming thin-film buffer layers of chalcogenide on a substrate web. Solutions containing the reactants for the buffer layer or layers may be dispensed separately to the substrate web, rather than being mixed prior to their application. The web and/or the dispensed solutions may be heated by a plurality of heating elements. | 2012-02-09 |
20120034727 | MULTILAYERED PHOTOVOLTAIC DEVICE ON ENVELOPE SURFACE - A method of producing a dye solar cell photovoltaic device. The method comprises the steps of providing a transparent envelope, with at least a portion of the envelope having a curved profile; and forming a dye solar cell voltaic element by depositing a plurality of layers of film on an inside surface of the envelope and thereby defining a space within the photovoltaic element. | 2012-02-09 |
20120034728 | LINEAR SEMICONDUCTOR SUBSTRATE, AND DEVICE, DEVICE ARRAY AND MODULE, USING THE SAME - The linear semiconductor substrate | 2012-02-09 |
20120034729 | MANUFACTURING METHOD FOR LIGHT-SENSING STRUCTURE - A manufacturing method for manufacturing a light-sensing structure is provided. The manufacturing method includes the steps as follows. (a) A circuit layer is formed on an upper surface of a first substrate, wherein the first substrate includes at least one light-sensing device and the circuit layer includes at least one device structure and at least one release feature that is made of metal and is formed on part of the light-sensing device and the device structure. (b) A first light-filtering layer is formed on part of the circuit layer. (c) The release feature is removed by a wet-etching process. | 2012-02-09 |
20120034730 | Backside Illuminated Sensor Processing - The present disclosure provides methods and apparatus for reducing dark current in a backside illuminated semiconductor device. In one embodiment, a method of fabricating a semiconductor device includes providing a substrate having a frontside surface and a backside surface, and forming a plurality of sensor elements in the substrate, each of the plurality of sensor elements configured to receive light directed towards the backside surface. The method further includes forming a dielectric layer on the backside surface of the substrate, wherein the dielectric layer is formed to have a compressive stress to induce a tensile stress in the substrate. A backside illuminated semiconductor device fabricated by such a method is also disclosed. | 2012-02-09 |
20120034731 | PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING SYSTEM AND PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD - A photoelectric conversion device manufacturing system in which a photoelectric conversion device is manufactured, the photoelectric conversion device including a p-type semiconductor layer, an i-type semiconductor layer, and an n-type semiconductor layer which are sequentially layered on a transparent-electroconductive film formed on a substrate in the photoelectric conversion device. The system includes: an i-layer-formation reaction chamber comprising at least a first film formation section, a second film formation section, and a third film formation section, the i-layer-formation reaction chamber forming the i-type semiconductor layer, the first film formation section, the second film formation section, and the third film formation section being sequentially arranged along a transfer direction in which the substrate is transferred; and a plurality of door valves separating the first film formation section, the second film formation section, and the third film formation section so that the length of the second film formation section is greater than the lengths of the first film formation section and the third film formation section in the transfer direction. | 2012-02-09 |
20120034732 | METHOD OF OPTIMIZING THE BAND EDGE POSITIONS OF THE CONDUCTION BAND AND THE VALENCE BAND OF A SEMICONDUCTOR MATERIAL FOR USE IN PHOTOACTIVE DEVICES - The present invention relates to a semiconductor compound having the general formula A | 2012-02-09 |
20120034733 | SYSTEM AND METHOD FOR FABRICATING THIN-FILM PHOTOVOLTAIC DEVICES - Described are a system and a method for depositing a thin film on a substrate. In some embodiments, the system includes a substrate transport system to transport a plurality of discrete substrates, such as glass substrates or wafers, along a closed path. The system also includes a metal deposition zone, a selenization zone and a cooling chamber each disposed on the closed path. During transport along the closed path, the metal deposition zone deposits a layer of a composite metal onto the discrete substrates and the selenization zone selenizes the layer of the composite metal. The cooling zone cools the discrete substrates prior to a subsequent pass through the metal deposition zone and the selenization zone. | 2012-02-09 |
20120034734 | SYSTEM AND METHOD FOR FABRICATING THIN-FILM PHOTOVOLTAIC DEVICES - Described are embodiments of methods for depositing a copper indium gallium diselenide (CIGS) film on a substrate, such as a web substrate or a discrete substrate. In various embodiments, an incremental layer of indium is deposited followed by deposition of a top incremental layer of copper gallium to create a multi-layer structure that is subsequently selenized. By capping the multi-layer structure with the copper gallium layer, the depletion of indium during the selenization of the multi-layer is reduced or eliminated. Additional multi-layers, each having a copper gallium cap layer, are formed and selenized to create the CIGS film. Optionally, the indium content and gallium content in each multi-layer are varied from the indium content and gallium content of one or more of the other multi-layers to achieve desired content gradients in the CIGS film. | 2012-02-09 |
20120034735 | Photosensitive compositions useful for forming active patterns, methods of forming such active patterns and organic memory devices incorporating such active patterns - Example embodiments herein relate to compositions useful in forming organic active patterns that may, in turn, be incorporated in organic memory devices. The compositions comprise N-containing conjugated electroconductive polymer(s), photoacid generator(s) and organic solvent(s) capable of dissolving suitable quantities of both the electroconductive polymer and the photoacid generator. Also disclosed are methods for patterning organic active layers formed using one or more of the compositions to produce organic active patterns, portions of which may be arranged between opposed electrodes to provide organic memory cells. The methods include directly exposing and developing the organic active layer to obtain fine patterns without the use of a separate masking pattern, for example, a photoresist pattern, thereby tending to simplify the fabrication process and reduce the associated costs. | 2012-02-09 |
20120034736 | THIN-FILM TRANSISTORS - A thin film transistor having a semiconducting layer with improved flexibility and/or mobility is disclosed. The semiconducting layer comprises a semiconducting polymer and insulating polymer. Methods for forming and using such thin-film transistors are also disclosed. | 2012-02-09 |
20120034737 | DIAMOND SEMICONDUCTOR ELEMENT AND PROCESS FOR PRODUCING THE SAME - A process of producing a diamond thin-film includes implanting dopant into a diamond by an ion implantation technique, forming a protective layer on at least part of the surface of the ion-implanted diamond, and firing the protected ion-implanted diamond at a firing pressure of no less than 3.5 GPa and a firing temperature of no less than 600° C. A process of producing a diamond semiconductor includes implanting dopant into each of two diamonds by an ion implantation technique and superimposing the two ion-implanted diamonds on each other such that at least part of the surfaces of each of the ion-implanted diamonds makes contact with each other, and firing the ion implanted diamonds at a firing pressure of no less than 3.5 GPa and a firing temperature of no less than 600° C. | 2012-02-09 |
20120034738 | SEMICONDUCTOR PACKAGE AND METHOD OF ATTACHING SEMICONDUCTOR DIES TO SUBSTRATES - A method of mounting a semiconductor die on a substrate with a solder mask on a first surface includes placing a die on the solder mask, and mounting the die to the substrate by applying pressure and heat. The applied pressure ranges from a bond force of approximately 5 to 10 Kg, the heat has a temperature range from approximately 150 to 200° C. and the pressure is applied for a range of approximately 1 to 10 seconds. | 2012-02-09 |
20120034739 | CHIP CAPACITIVE COUPLING - A method of creating a semiconductor chip having a substrate, a doped semiconductor material abutting the substrate and a device pad at an outer side of the doped semiconductor material involves creating a via through at least a portion of the substrate, the via having a periphery and a bottom at a location and depth sufficient to bring the via into proximity with the device pad but be physically spaced apart from the device pad, introducing an electrically conductive material into the via, and connecting the electrically conductive material to a signal source so the signal will deliberately be propagated from the electrically conductive material to the device pad without any direct electrical connection existing between the electrically conductive material and the device pad. | 2012-02-09 |
20120034740 | PRE-ENCAPSULATED CAVITY INTERPOSER - Methods of forming pre-encapsulated frames comprise flowing a dielectric encapsulation material around at least one conductive trace. A cavity configured to receive at least one semiconductor device at least partially in the cavity is formed in the encapsulation material. A first connection area of the at least one trace is exposed within the cavity. At least another connection area of the at least one trace is exposed laterally adjacent to the cavity. The dielectric encapsulation material is hardened to form a pre-encapsulated frame. | 2012-02-09 |
20120034741 | POWER DEVICE PACKAGE COMPRISING METAL TAB DIE ATTACH PADDLE (DAP) AND METHOD OF FABRICATING THE PACKAGE - A metal tab die attach paddle (DAP) disposed between the lead frame and a power device die in a power device package reduces the stress exerted on the semiconductor power device die caused by the different coefficients of thermal expansion (CTE) of the semiconductor power device die and the lead frame. In addition the power device package substantially prevents impurities from penetrating into the power device package by increasing the surface creepage distance of a sealant resulting from the metal tab DAP and an optional swaging of the lead frame. | 2012-02-09 |
20120034742 | SEMICONDUCTOR DEVICE - To actualize a reduction in the on-resistance of a small surface mounted package having a power MOSFET sealed therein. A silicon chip is mounted on a die pad portion integrated with leads configuring a drain lead. The silicon chip has, on the main surface thereof, a source pad and a gate pad. The backside of the silicon chip configures a drain of a power MOSFET and bonded to the upper surface of a die pad portion via an Ag paste. A lead configuring a source lead is electrically coupled to the source pad via an Al ribbon, while a lead configuring a gate lead is electrically coupled to the gate pad via an Au wire. | 2012-02-09 |
20120034743 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A semiconductor device in which a defect is suppressed and miniaturization is achieved is provided. An insulating film is formed over a flat surface; a first mask is formed over the insulating film; a second mask is formed by performing a slimming process on the first mask; an insulating layer is formed by performing an etching process on the insulating film using the second mask; an oxide semiconductor layer covering the insulating layer is formed; a conductive film covering the oxide semiconductor layer is formed; a surface of the conductive film is flattened by performing a polishing process on the conductive film; an etching process is performed on the conductive film, so that a conductive layer is formed and a surface of the conductive layer is lower than a surface of an uppermost part of the oxide semiconductor layer; a gate insulating film in contact with the conductive layer and the oxide semiconductor layer is formed; and a gate electrode is formed in a region which is over the gate insulating film and overlaps with the insulating layer. | 2012-02-09 |
20120034744 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A highly responsive semiconductor device in which the subthreshold swing (S value) is small and reduction in on-current is suppressed is manufactured. A semiconductor layer in which a thickness of a source region or a drain region is larger than that of a channel formation region is formed. A semiconductor layer having a concavo-convex shape which is included in the semiconductor device is formed by the steps of forming a first semiconductor layer over a substrate; forming a first insulating layer and a conductive layer over the first semiconductor layer; forming a second insulating layer over a side surface of the conductive layer; forming a second semiconductor layer over the first insulating layer, the conductive layer and the second insulating layer; etching the second semiconductor layer using a resist formed partially as a mask; and performing heat treatment to the first semiconductor layer and the second semiconductor layer. | 2012-02-09 |
20120034745 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICES WITH REDUCED JUNCTION DIFFUSION - A transistor which includes halo regions disposed in a substrate adjacent to opposing sides of the gate. The halo regions have upper and lower regions. The upper region is a crystalline region with excess vacancies and the lower region is an amorphous region. Source/drain diffusion regions are disposed in the halo regions. The source/drain diffusion regions overlap the upper and lower halo regions. This architecture offers the minimal extension resistance as well as minimum lateral diffusion for better CMOS device scaling. | 2012-02-09 |
20120034746 | Methods of Fabricating MOS Transistors Having Recesses With Elevated Source/Drain Regions - Methods of fabricating metal-oxide-semiconductor (MOS) transistors having elevated source/drain regions are provided. The MOS transistors formed by these methods may include a gate pattern formed to cross over a predetermined region of a substrate. Recessed regions are provided in the substrate adjacent to the gate pattern. Epitaxial layers are provided on bottom surfaces of the recessed regions. High concentration impurity regions are provided in the epitaxial layers. The recessed regions may be formed using a chemical dry etching techniques. | 2012-02-09 |
20120034747 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device is described. A polysilicon layer is formed on a substrate. The polysilicon layer is doped with an N-type dopant. A portion of the polysilicon layer is then removed to form a plurality of dummy patterns. Each dummy pattern has a top, a bottom, and a neck arranged between the top and the bottom, where the width of the neck is narrower than that of the top. A dielectric layer is formed on the substrate to cover the substrate disposed between adjacent dummy patterns, and the top of each dummy pattern is exposed. Thereafter, the dummy patterns are removed to form a plurality of trenches in the dielectric layer. A plurality of gate structures is formed in the trenches, respectively. | 2012-02-09 |
20120034748 | METHOD OF FABRICATING TRANSISTOR FOR SEMICONDUCTOR DEVICE - A method of fabricating a transistor in a semiconductor device includes forming a gate structure over a substrate, forming a first trench by etching the substrate on either side of the gate structure to a first depth, ion-implanting dopants of a first conductivity type to form a source/drain region in the substrate on the side of the gate structure with the first trench, etching the substrate on the side of the gate structure with the first trench to a second depth larger than the first depth to form a second trench, and growing an epitaxial layer within the second trench. | 2012-02-09 |
20120034749 | METHOD FOR MANUFACTURING A STRAINED SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device can be provided by forming a gate structure on a substrate and forming a diffusion barrier layer on the gate structure and the substrate, A stress layer can be formed on the diffusion barrier layer comprising a metal nitride or a metal oxide having a concentration of nitrogen or oxygen associated therewith. The stress layer can be heated to transform the stress layer into a tensile stress layer to reduce the concentration of the nitrogen or the oxygen in the stress layer. The tensile stress layer and the diffusion barrier layer can be removed. | 2012-02-09 |
20120034750 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND PLASMA DOPING APPARATUS - After a fin-semiconductor region ( | 2012-02-09 |
20120034751 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a flash memory cell in a first region, forming a first electrode of a capacitor in a second region, forming a first silicon oxide film, a silicon nitride film, and a second silicon oxide film in this order as a second insulating film, removing the silicon nitride film and the second silicon oxide film in a partial region of the first electrode, wet-etching a first insulating film and the second insulating film in the third region, forming a second electrode of the capacitor, and etching and removing the first silicon oxide film in the partial region. | 2012-02-09 |
20120034752 | METHODS OF FORMING A GATE STRUCTURE AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME - In a method of forming a gate structure, a gate pattern including a gate insulation layer pattern and a gate electrode sequentially stacked on a substrate is formed. The gate electrode includes a metal. A first plasma process is performed on the gate pattern using a reaction gas to reduce an oxidized edge portion of the gate electrode. The reaction gas includes nitrogen. A spacer is formed on a sidewall of the gate pattern. A threshold voltage is adjusted by reducing the oxidized edge portion of the gate electrode. Therefore, a semiconductor device including the gate pattern has excellent electrical characteristics. | 2012-02-09 |
20120034753 | Methods of Forming a Plurality of Capacitors - A method of forming a plurality of capacitors includes an insulative material received over a capacitor array area and a circuitry area. The array area comprises a plurality of capacitor electrode openings within the insulative material received over individual capacitor storage node locations. The intervening area comprises a trench. Conductive metal nitride-comprising material is formed within the openings and against a sidewall portion of the trench to less than completely fill the trench. Inner sidewalls of the conductive material within the trench are annealed in a nitrogen-comprising atmosphere. The insulative material within the array area is etched with a liquid etching solution effective to expose outer sidewall portions of the conductive material within the array area. The conductive material within the array area is incorporated into a plurality of capacitors. | 2012-02-09 |
20120034754 | SEMICONDUCTOR DEVICE MANUFACATURING METHOD AND SILICON OXIDE FILM FORMING METHOD - A semiconductor device manufacturing method has forming element isolation trenches in a semiconductor substrate, forming a silicon compound film in insides of the element isolation trenches in order to embed the element isolation trenches, conducting a first oxidation processing at a first temperature to reform a surface of the silicon compound film to a volatile matter emission preventing layer which permits passage of an oxidizing agent and impurities and which does not permit passage of a volatile matter containing silicon atoms, and conducting a second oxidation processing at a second temperature which is higher than the first temperature to form a coated silicon oxide film inside the element isolation trenches. | 2012-02-09 |
20120034755 | METHOD AND MANUFACTURE FOR HIGH VOLTAGE GATE OXIDE FORMATION AFTER SHALLOW TRENCH ISOLATION FORMATION - A method and manufacture for fabrication of flash memory is provided. In fabricating the periphery region of the flash memory, the low voltage gate oxides and high voltage gate oxides are grown to the same height as each other prior to STI etching. After STI etching and gap fill, the nitride above the high voltage gate oxide regions are etched, and the oxide in high voltage gate oxide regions is grown to the appropriate thickness for a high voltage gate oxide. | 2012-02-09 |
20120034756 | Method of Forming a Deep Trench Isolation Structure Using a Planarized Hard Mask - A number of deep trench openings are formed in a semiconductor wafer to have substantially equal depths and no oxide undercut by forming a number of shallow trench openings, forming a mask structure in the shallow trench openings where the mask structure has a substantially planar top surface, forming a number of mask openings in the mask structure, and etching the semiconductor wafer through the mask openings to form the deep trench openings. | 2012-02-09 |