04th week of 2011 patent applcation highlights part 12 |
Patent application number | Title | Published |
20110017936 | PIEZOELECTRIC CERAMIC AND PIEZOELECTRIC CERAMIC COMPOSITION - A piezoelectric ceramic | 2011-01-27 |
20110017937 | RELAXOR-PT FERROELECTRIC SINGLE CRYSTALS - A <110> domain engineered relaxor-PT single crystals having a dielectric loss of about 0.2%, a high electromechanical coupling factor greater than about 85%, and high mechanical quality factor greater than about 500 is disclosed. In one embodiment, the relaxor-PT material has the general formula, Pb(B | 2011-01-27 |
20110017938 | HALF-METALLIC ANTIFERROMAGNETIC MATERIAL - A half-metallic antiferromagnetic material according to the present invention is a compound that has a crystal structure of a nickel arsenic type, a zinc blende type, a wurtzite type, a chalcopyrite type or a rock salt type and is constituted of two or more magnetic elements and a chalocogen or a pnictogen. The two or more magnetic elements contain a magnetic element having fewer than 5 effective d electrons and a magnetic element having more than 5 effective d electrons, and a total number of effective d electrons of the two or more magnetic elements is 10 or a value close to 10. | 2011-01-27 |
20110017939 | MAGNETIC RUBBER COMPOSITION FOR ENCODER - A magnetic rubber composition for encoder having a magnetic characteristic in sufficient application range, used as encoder after magnetization as well as heat resistance, water resistance and oil resistance required for use as encoder, and excellent processing property, and capable of being bonded by vulcanization with a metal, is provided. Furthermore, a magnetic rubber composition for encoder capable of obtaining sufficient magnetic force required for encoder on a circumference of the molded encoder as well as capable of effectively restraining variation of the level of magnetic force, is provided. It is provided by comprising 300 to 1,800 parts of strontium-ferrite, or 300 to 1,800 parts of barium-ferrite, or 300 to 1,800 parts of a mixture of strontium-ferrite and barium-ferrite, 0.5 to 2 parts of silane coupling agent, and 1 to 10 parts of lubricating agent, per 100 parts of a hydrogenated nitrile butadiene rubber with 15 to 50% of acrylonitrile amount and 80 to 99% of hydrogenation ratio. | 2011-01-27 |
20110017940 | Refrigerant Composition - [Problems] To provide a safe, nontoxic, and high-performance mixed refrigerant for hot water supply/heating system which is prepared by mixing dimethyl ether with carbon dioxide and which does not deplete the ozone layer, has a low global warming potential, and permits low-pressure operation. | 2011-01-27 |
20110017941 | Refrigerant Composition - The present invention is directed to using a composition comprising carbon dioxide and dimethyl ether as a refrigerant. In particular, the refrigerant composition comprises 3-6% by mole dimethyl ether and 97-94% by mole of carbon dioxide on the basis of a total number of moles of dimethyl ether and carbon dioxide. Advantageously, the refrigerant composition does not cause ozonosphere depletion, has a low global warming potential, and is safe and nontoxic. | 2011-01-27 |
20110017942 | PENTAFLUOROETHANE, TETRAFLUOROETHANE AND N-BUTANE COMPOSITIONS - Disclosed are compositions containing about 17.0 weight percent to about 22.0 weight percent pentafluoroethane; about 77.0 weight percent to about 81.0 weight percent 1,1,1,2-tetrafluoroethane; and about 1.0 weight percent to about 2.0 weight percent of n-butane, and which may include optional other components. | 2011-01-27 |
20110017943 | USE OF HYDROPHOBINS TO PREVENT ICE FROM FORMING ON SURFACES - The use of hydrophobins for preventing the formation of ice on surfaces, especially for the prevention of ice formation on aircraft surfaces. | 2011-01-27 |
20110017944 | Method for Encapsulating Latent Heat Storage Material and Products Obtained Thereby - The invention relates to a method for producing an inorganic latent heat storage material that is surrounded by an encapsulating layer that is made of an inorganic-organic polymer material that comprises a metal and/or semi-metal oxygen network with embedded organic groups. The method is characterised in that a liquid or liquefied latent heat storage material, in the form of discrete units that are to be, respectively, encapsulated, is introduced into a liquid or viscous precursor material of the encapsulating material such that the encapsulating material solidifies when coming into contact with the outer surfaces of said latent heat storage material. The invention also relates to an inorganic latent heat storage material that is surrounded by an encapsulating layer and is present in said encapsulation, said encapsulating material being made of an inorganic-organic polymer material that comprises a (semi) metal oxygen network with embedded organic groups, connected, preferably at least partially to (semi) metal. Silane resins are well suited as precursor material. | 2011-01-27 |
20110017945 | NOVEL FORMULATION OF A WARE WASHING SOLID CONTROLLING HARDNESS - A water hardness controlling agent includes an acrylate polymer having a molecular weight of about 4,500 g/mol, an acrylate-maleic copolymer having a molecular weight of about 40,000 g/mol and a 2-phosphonobutane-1,2,4-tricarboxylic acid. A ratio of acrylate-maleic copolymer to acrylate polymer to the 2-phosphonobutane-1,2,4-tricarboxylic acid in parts per million is about 5-30:10-40:6-20. | 2011-01-27 |
20110017946 | CATHODE ACTIVE MATERIAL, CATHODE INCLUDING CATHODE ACTIVE MATERIAL, AND LITHIUM BATTERY INCLUDING CATHODE - A cathode active material including a spinel lithium manganese composite oxide represented by Formula 1 below, a cathode including the cathode active material, and a lithium battery including the cathode: | 2011-01-27 |
20110017947 | LITHIUM METAL PHOSPHATES, METHOD FOR PRODUCING THE SAME AND USE THEREOF AS ELECTRODE MATERIAL - The invention describes a process for producing a compound of the formula LiMPO.sub.4, in which M represents at least one metal from the first transition series, comprising the following steps: a) production of a precursor mixture, containing at least one Li.sup.+ source, at least one M.sup.2+ source and at least one PO.sub.4.sup.3− source, in order to form a precipitate and thereby to produce a precursor suspension; b) dispersing or milling treatment of the precursor mixture and/or the precursor suspension until the D90 value of the particles in the precursor suspension is less than 50 .mu.m; and c) the obtaining of LiMPO.sub.4 from the precursor suspension obtained in accordance with b), preferably by reaction under hydrothermal conditions. The material obtainable by this process has particularly advantageous particle size distributions and electrochemical properties when used in electrodes. | 2011-01-27 |
20110017948 | SILICON SINGLE CRYSTAL PULLING APPARATUS AND MANUFACTURING METHOD OF SILICON SINGLE CRYSTAL - Disclosed is a silicon single crystal pull-up apparatus that can grow a silicon single crystal having a desired electrical resistivity, to which a sublimable dopant has been reliably added, regardless of the length of the time necessary for the formation of a first half part of a straight body part in a silicon single crystal. Also disclosed is a process for producing a silicon single crystal. The silicon single crystal pull-up apparatus pulls up a silicon single crystal from a melt by a Czochralski method. The silicon single crystal pull-up apparatus comprises a pull-up furnace, a sample chamber that is externally mounted on the pull-up furnace and houses a sublimable dopant, a shielding mechanism that thermally shields the pull-up furnace and the sample chamber, and supply means that, after the release of shielding of the shielding mechanism, supplies the sublimable dopant into the melt. | 2011-01-27 |
20110017949 | Methods and apparatus to produce aligned film of lyotropic chromonic liquid crystals - The present invention comprises a device and method for ordering molecules of lyotropic chromonic liquid crystals to aligned structure of a dried film. An example of an aligned film may be transparent to visible light but not transparent to polarized light in the ultraviolet and/or infrared portions of the electromagnetic spectrum. A shearing device having a shearing tool and a repelling pad may repel the solvent and provide a shear force to shear the LCLC dissolved in the solvent as a film on the surface of a substrate. A method of making an aligned lyotropic chromonic liquid crystal-based film comprises providing a mixture of a lyotropic chromonic liquid crystal material in a solvent for the liquid crystal material, applying the mixture to a substrate, shearing the lyotropic chromonic liquid crystal with a shearing device and removing the solvent to produce an aligned lyotropic chromonic liquid crystal-based film. | 2011-01-27 |
20110017950 | Highly luminescent color-selective nanocrystalline materials - A nanocrystal capable of light emission includes a nanoparticle having photoluminescence having quantum yields of greater than 30%. | 2011-01-27 |
20110017951 | SEMICONDUCTOR PHOSPHOR NANOPARTICLE - A semiconductor phosphor nanoparticle including nanoparticle core made of a group 13-group 15 semiconductor; a shell layer coating the semiconductor nanoparticle core; and a metal-containing modified organic compound and a modified organic compound binding to a surface of the shell layer is disclosed. | 2011-01-27 |
20110017952 | STRUCTURES INCORPORATING POLYMER-INORGANIC PARTICLE BLENDS - Polymer-inorganic particle blends are incorporated into structures generally involving interfaces with additional materials that can be used advantageously for forming desirable devices. In some embodiments, the structures are optical structures, and the interfaces are optical interfaces. The different materials at the interface can have differences in index-of-refraction to yield desired optical properties at the interface. In some embodiments, structures are formed with periodic variations in index-of-refraction. In particular, photonic crystals can be formed. Suitable methods can be used to form the desired structures. | 2011-01-27 |
20110017953 | Process for the Preparation of a Catalytic Specie Using Electro-Deposition - Process for the preparation of a catalytic specie consisting essentially of a metallic support, which is coated with a ceramic active phase layer, mainly compound of the general formula (I): | 2011-01-27 |
20110017954 | VINYL SULFONIC ACID, POLYMER THEREOF, AND PRODUCTION METHOD THEREOF - (1) A vinyl sulfonic acid, having a double bond content of 95 wt. % or more, and (i) a sodium (Na) content of 1 ppm or less, and (ii) a content of at least one metal selected from the group consisting of alkali earth metal and first row transition metal of 1 ppm or less. Alternatively, (2) a vinyl sulfonic acid, having a double bond content of 95 wt. % or more, and (i) a sodium (Na) content of 100 ppb or less, and (ii) a content of at least one metal selected from the group consisting of alkali earth metal and first row transition metal of 100 ppb or less. Further, a homopolymer or copolymer thereof, a production method thereof, or a thin-film distillation apparatus suited for the production thereof. | 2011-01-27 |
20110017955 | Nano graphene-modified curing agents for thermoset resins - The present invention provides a modified curing agent for a thermosetting resin, such as epoxy resin. As one example, the epoxy curing agent comprises: (a) multiple nano graphene platelets; (b) a chemical functional group having multiple ends with a first end being bonded to a nano graphene platelet and at least a second end reactive with the epoxy resin; and (c) reactive molecules acting as a primary cross-linking agent for the epoxy resin; wherein the nano graphene platelet content is no less than 0.01% by weight based on the total weight of the modified curing agent. A modified curing agent containing reactive molecule-functionalized NGPs enable excellent dispersion of NGP in a resin matrix and the resulting nanocomposites exhibit much better properties than those of corresponding nanocomposites prepared by directly mixing dried NGPs with the thermosetting resins. | 2011-01-27 |
20110017956 | CONJUGATED POLYMERS WITH CARBONYL SUBSTITUTED THIENO[3,4-B]THIOPHENE UNITS FOR POLYMER SOLAR CELL ACTIVE LAYER MATERIALS - In one embodiment of the present disclosure, a series of conjugated polymers used, among other things, as polymer solar cell or polymer photovoltaic device active layer materials, is provided. In one embodiment, the conjugated polymers have the general structure and formula shown in (I), wherein: R1 and R2 are independently selected from proton, halogens, alkyls, aryls and substituted aryls; Ar is selected from the group consisting of monocyclic, bicyclic and polycyclic arylene, or monocyclic, bicyclic and polycyclic heteroarylene. In another embodiment, the conjugated photovoltaic polymers are comprised of repeated units having the general structure of formula (II), wherein, R1, R2, R3, R4, R5, and R6 are independently selected from proton, alkyls, halogens, aryls, substituted aryls, and other kinds of substituents. Synthesis methods of several polymers of the present disclosure are provided, and absorption spectra and electrochemical cyclic voltammetry data of some polymers, and also the photovoltaic properties of the polymers in this present disclosure are also provided. | 2011-01-27 |
20110017957 | METHOD OF MANUFACTURING CONDUCTIVE COMPOSITE FIBRES WITH A HIGH PROPORTION OF NANOTUBES - This invention relates to a method of obtaining vinyl alcohol homo- or copolymer-based conductive composite fibres with a high proportion of nanotubes, particularly carbon nanotubes, which are capable of ensuring thermal and/or electric conduction. It likewise relates to the conductive composite fibres obtainable by this method as well as the uses thereof. | 2011-01-27 |
20110017958 | ORGANIC TRANSPARENT ELECTROCONDUCTIVE MATERIAL, INK FOR FORMING ORGANIC TRANSPARENT ELECTROCONDUCTIVE MATERIAL, AND METHODS FOR PRODUCING THEM - A method for producing a transparent electroconductive material, the method comprising a step of contacting poly(N-alkylcarbazole) with a metal, said poly(N-alkylcarbazole) is obtained by polymerizing at least one kind of N-alkylcarbazole represented by the following general formula, | 2011-01-27 |
20110017959 | CATHODE MATERIALS FOR SECONDARY (RECHARGEABLE) LITHIUM BATTERIES - The invention relates to materials for use as electrodes in an alkali-ion secondary (rechargeable) battery, particularly a lithium-ion battery. The invention provides transition-metal compounds having the ordered-olivine, a modified olivine, or the rhombohedral NASICON structure and the polyanion (PO | 2011-01-27 |
20110017960 | Complex Inorganic Effect Materials - The present invention relates to a complex inorganic color effect material based on multiply coated platelet-shaped substrates wherein one of the layers is a complex inorganic colored pigment. The present color effect material may be used in automotive applications, security inks, and decorative coatings. | 2011-01-27 |
20110017961 | Polychromic Substances and Their Use - A compound which undergoes a colour change upon irradiation, and which has the general structure: X—C≡C—C≡C—Y—(CO) | 2011-01-27 |
20110017962 | COLORED CURABLE COMPOSITION, COLOR FILTER AND SOLID-STATE IMAGING DEVICE - A colored curable composition including: (A) a pigment dispersion containing (a-1) a pigment, (a-2) a compound having a pigment mother nucleus structure and an amino group in a molecule, and (a-3) a resin having an acid group and a polymerizable group; (B) an oxime ester initiator; and (C) a polymerizable compound. | 2011-01-27 |
20110017963 | NANOPARTICLE DISPERSION, COMPOSITIONS CONTAINING THE SAME, AND ARTICLES MADE THEREFROM - A dispersion that includes at least one organic solvent; nanoparticles, wherein the nanoparticles are infrared absorptive, conductive or a both infrared absorptive and conductive; and at least one polycaprolactone-polyamine copolymer, wherein the dispersion comprises agglomerates of the nanoparticles and a majority of the agglomerates have an average diameter that are not greater than 100 nanometers. Compositions, films, articles and light control articles that utilize such dispersions are also discussed. | 2011-01-27 |
20110017964 | TOOL, SYSTEM AND METHOD FOR RAILCAR MAINTENANCE - Embodiments of a mechanical tool for railcar maintenance are disclosed, which are most suitable for handling heavy components during undercarriage operations. In one particular embodiment, the tool may include: a cantilever beam having a first end and a second end; a support element disposed between said first end and said second end for pivotally attaching said cantilever beam to a supporting device; a first attachment element configured to grip a first railcar component; a safety latch mechanism, at said first end, for securing said first attachment element, including when said first railcar component is gripped by said first attachment element, and for preventing disengagement of said first attachment element unless said cantilever beam is in a substantially level position; and a weight element adjustably disposed between said support element and said second end, wherein said weight element, when positioned at a first predetermined stop location marked along said cantilever beam, substantially counterbalances said first railcar component gripped by said first attachment element at said first end. | 2011-01-27 |
20110017965 | Fence and Rail Assemblies and Methods of Forming the Same - The present invention relates to fence and railing, and methods of forming the same, having improved attachment means for panels. In one aspect, the present invention provides a transparent fence or rail assembly. The transparent fence or rail assembly includes a transparent panel having a first edge and a second edge. The transparent fence or rail assembly also includes a first frame member extending along the first edge of the transparent panel, the first frame member being fixedly attached to the transparent panel with a first adhesive, and a second frame member extending along the second edge of the transparent panel, the second frame member being fixedly attached to the transparent panel with a second adhesive, wherein the transparent fence or rail assembly requires no additional attachment feature for maintaining the position of the transparent panel with respect to the first frame member and second frame member. | 2011-01-27 |
20110017966 | Privacy fence inserts with locking member - Privacy Systems for a Fence comprise a plurality of elongates privacy inserts positioned in at least one locking member comprising a plurality of locking tabs. In one embodiment, the locking member is laterally inserted into the bottom of a chain link fence perpendicular to the privacy inserts. Apertures near the bottom edges of the front and rear sides of the privacy inserts engage the locking tabs thereby retaining the privacy inserts in alignment in the chain link fence. The locking tabs on front and rear support walls of the locking member are preferably laterally offset from each other. | 2011-01-27 |
20110017967 | INTEGRATED SAFETY RAIL PROTECTION SYSTEM - A unique safety rail system with integrated ergonomically effective hand-grip projections, structures for affixing said system for the safe and easy egress and ingress through an opening, such as roof or floor access holes. Said safety rail system is designed to reduce the risk of falls while ascending or descending a ladder through an access hole while providing additional protection and prevention of personnel accidentally falling through an open access. A self-closing gravity gate may be provided acting as additional hand-grip, support, and barrier. This invention may employ cost effective methods of construction and assembly using a unique continuous tubular structure of converging vertical and angular upright post with horizontal upper safety rail, forward protruding ergonomically effecting hand-grip and opposing directionally horizontal lower attachment support means reducing lateral motion and allows efficient installation for new construction or retro fitting of existing openings. | 2011-01-27 |
20110017968 | Metal safety rail for open floors of a building under construction - A metal safety rail for open floors of a building under construction includes a baseplate | 2011-01-27 |
20110017969 | Handrail assembly and method - This invention relates to a handrail assembly that can be installed on any wall. The assembly consists of a handrail and a bracket. The bracket can be twist-locked inside the handrail at any point in the handrail because the handrail has a continuous T-shaped channel at the bottom. The T-shaped channel's bottom portion is narrower than the upper portion. The bracket has a head that is as wide as the T-shaped channel's bottom portion and as long as the T-shaped channel's upper portion. The head has one curved corner to facilitate turning and teeth to bite into the upper portion of the channel's wall. The head is lifted through the bottom portion into the upper portion of the channel, the bracket is rotated a quarter turn, and the bracket becomes immobilized. The head of the bracket acts as a cam. Union joints can join multiple lengths of handrails. | 2011-01-27 |
20110017970 | SELF-ALIGN PLANERIZED BOTTOM ELECTRODE PHASE CHANGE MEMORY AND MANUFACTURING METHOD - A method is described for self-aligning a bottom electrode in a phase change random access memory PCRAM device where a top electrode serves as a mask for self-aligning etching of the bottom electrode. The bottom electrode has a top surface that is planarized by chemical mechanical polishing. The top electrode also has a top surface that is planarized by chemical mechanical polishing. A bottom electrode layer like TiN is formed over a substrate and prior to the formation of a via during subsequent process steps. A first dielectric layer is formed over the bottom electrode layer, and a second dielectric layer is formed over the first dielectric layer. A via is formed at a selected section that extends through the first and second dielectric layers. | 2011-01-27 |
20110017971 | INTEGRATED CIRCUIT DEVICES INCLUDING LOW-RESISTIVITY CONDUCTIVE PATTERNS IN RECESSED REGIONS - An integrated circuit device includes a device isolation pattern on a semiconductor substrate to define an active area therein. The active area includes a doped region therein. A conductive pattern extends on the active area and electrically contacts the doped region. The conductive pattern has a lower resistivity than the doped region. The conductive pattern may be disposed in a recessed region having a bottom surface lower than a top surface of the active area. A channel pillar electrically contacts to the doped region and extends therefrom in a direction away from the substrate. A conductive gate electrode is disposed on a sidewall of the channel pillar, and a gate dielectric layer is disposed between the gate electrode and the sidewall of the channel pillar. | 2011-01-27 |
20110017972 | LIGHT EMITTING STRUCTURE WITH INTEGRAL REVERSE VOLTAGE PROTECTION - A light emitting structure having reverse voltage protection (RVP) is provided along with disclosure of a method for fabricating the light emitting structure. The light emitting structure includes a substrate having a first face, a second face, and a p-n junction formed within the substrate between a p-type layer and an n-type layer, wherein the p-type layer and the n-type layer are adapted as a RVP diode. A buffer layer is provided on the substrate, and a light emitting diode (LED) is fabricated on the buffer layer. The LED is then electrically coupled to the RVP diode in an anti-parallel diode pair (APDP) configuration. | 2011-01-27 |
20110017973 | Nanodevice, Transistor Comprising the Nanodevice, Method for Manufacturing the Nanodevice, and Method for Manufacturing the Transistor - A nanodevice, a transistor including the nanodevice, a method of manufacturing the nanodevice, and a method of manufacturing the transistor including the nanodevice are provided. The nanodevice includes a substrate, a mask layer located on the substrate and having at least one opening, and a nanotube formed on the substrate through the opening along an edge of the opening. The nanotube extends through the opening in a direction substantially perpendicular to a surface of the substrate. | 2011-01-27 |
20110017974 | COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a compound semiconductor light emitting device capable of optimizing strain applied to an active layer and a clad layer to minimize a piezoelectric field and spontaneous polarization in an active layer and to maximize light emission efficiency. In a compound semiconductor light emitting device having a structure in which a buffer layer, a first clad layer, an active layer, and a second clad layer are sequentially deposited, a strain induction layer and a strain control layer intersect at least once and are deposited between the buffer layer and the first clad layer, the strain induction layer performs induction so that compressive strain to be applied to the active layer is dispersed to the strain control layer, and the compressive strain applied to the active layer is reduced as the compressive strain is applied to the strain control layer. | 2011-01-27 |
20110017975 | ORGANIC OPTOELECTRONIC DEVICE ELECTRODES WITH NANOTUBES - An electrode for use in an organic optoelectronic device is provided. The electrode includes a thin film of single-wall carbon nanotubes. The film may be deposited on a substrate of the device by using an elastomeric stamp. The film may be enhanced by spin-coating a smoothing layer on the film and/or doping the film to enhance conductivity. Electrodes according to the present invention may have conductivities, transparencies, and other features comparable to other materials typically used as electrodes in optoelectronic devices. | 2011-01-27 |
20110017976 | ULTRAVIOLET LIGHT EMITTING DIODE/LASER DIODE WITH NESTED SUPERLATTICE - A light emitting device with a template comprising a substrate and a nested superlattice. The superlattice has Al | 2011-01-27 |
20110017977 | MEMRISTORS WITH INSULATION ELEMENTS AND METHODS FOR FABRICATING THE SAME - Embodiments of the present invention are directed to nanoscale memristor devices that provide nonvolatile memristive switching. In one embodiment, a memristor device comprises an active region disposed between a first electrode and a second electrode. The device includes a first insulation element disposed between the first electrode and an outer portion of a first surface of the active region. The first insulation element is configured with one or more opening through which the first electrode makes physical contact with the active region. The device also includes a second insulation element disposed between the second electrode and an outer portion of a second surface of the active region. The second insulation element is configured with one or more opening through which the second electrode makes physical contact with the second surface. | 2011-01-27 |
20110017978 | STRAIN-INDUCING SEMICONDUCTOR REGIONS - A method to form a strain-inducing semiconductor region is described. In one embodiment, formation of a strain-inducing semiconductor region laterally adjacent to a crystalline substrate results in a uniaxial strain imparted to the crystalline substrate, providing a strained crystalline substrate. In another embodiment, a semiconductor region with a crystalline lattice of one or more species of charge-neutral lattice-forming atoms imparts a strain to a crystalline substrate, wherein the lattice constant of the semiconductor region is different from that of the crystalline substrate, and wherein all species of charge-neutral lattice-forming atoms of the semiconductor region are contained in the crystalline substrate. | 2011-01-27 |
20110017979 | HIGH-PERFORMANCE GATE OXIDES SUCH AS FOR GRAPHENE FIELD-EFFECT TRANSISTORS OR CARBON NANOTUBES - An apparatus or method can include forming a graphene layer including a working surface, forming a polyvinyl alcohol (PVA) layer upon the working surface of the graphene layer, and forming a dielectric layer upon the PVA layer. In an example, the PVA layer can be activated and the dielectric layer can be deposited on an activated portion of the PVA layer. In an example, an electronic device can include such apparatus, such as included as a portion of graphene field-effect transistor (GFET), or one or more other devices. | 2011-01-27 |
20110017980 | PROCESS AND MATERIALS FOR MAKING CONTAINED LAYERS AND DEVICES MADE WITH SAME - There is provided a process for forming a contained second layer over a first layer, including the steps:
| 2011-01-27 |
20110017981 | PROCESS FOR THE PREPARATION OF SEMICONDUCTING LAYERS - A convenient way for preparing thin layers of organic semiconducting materials comprises application or deposition of particles of a semiconducting material containing an organic semiconductor on a suitable surface, and converting these particles into a semiconducting layer on a substrate by application of pressure and optionally elevated temperatures. | 2011-01-27 |
20110017982 | ELEMENT FOR ELECTRONIC COMPONENT - A surface of an anode body made of a metal material having a valve action is oxidized so as to form a dielectric layer, a conductive polymer precursor solution is stuck to the surface of the dielectric layer, the solvent is evaporated in an atmosphere of a relative humidity of 30 to 45% to be removed, electropolymerization is carried out so as to obtain a semiconductor layer having projections being 2 to 70 μm high on the outer surface thereof, a conductive carbon layer is laminated using a conductive carbon paste, and a conductive metal layer containing a metal conductive powder and a binder is laminated so as to obtain an element for an electronic component, and the element for an electronic component is encapsulated by a resin so as to obtain an electronic component. | 2011-01-27 |
20110017983 | POLYMER AND ORGANIC ELECTROLUMINESCENT DEVICE INCLUDING THE SAME - A polymer compound including a repeating unit shown by the following formula (1) wherein at least one of Ar | 2011-01-27 |
20110017984 | Metal complex compound and organic electroluminescent device using same - A metal complex compound having a special structure containing metals such as iridium. An organic electroluminescence device which comprises at least one organic thin film layer sandwiched between a pair of electrode consisting of an anode and a cathode, wherein the organic thin film layer comprises the above metal complex compound, which emits light by applying an electric voltage between the pair of electrode. An organic EL device employing the novel metal complex compound emits various phosphorous lights including blue light having an enhanced current efficiency and prolonged lifetime. | 2011-01-27 |
20110017985 | ELECTRONIC DEVICE UTILIZING FLUORINATED CARBON NANOTUBES - The present invention is an electronic device and a process for making the electronic device in which the semiconductor component comprises at least one carbon nanotube functionalized with a fluorinated olefin. Functionalization with the fluorinated olefin renders the carbon nanotube semiconducting. | 2011-01-27 |
20110017986 | Silicone Composition and Organic Light-Emitting Diode - A silicone composition comprising (A) a hydrolysis product prepared by reacting at least one thiophenyl-substituted silane and a cross-linking agent with water in the presence of an organic solvent to form an organic phase containing the hydrolysis product and an aqueous phase, and separating the organic phase from the aqueous phase, and (B) an organic solvent; and an organic light-emitting diode (OLED) containing a hole-transport/hole-injection layer comprising a cured polysiloxane prepared by applying the aforementioned silicone composition to form a film and curing the film. | 2011-01-27 |
20110017987 | METHOD OF MANUFACTURING ORGANIC ELECTROLUMINESCENT ELEMENT AND WHITE LIGHT-EMITTING ORGANIC ELECTROLUMINESCENT ELEMENT - In the present invention, disclosed is a method of manufacturing an organic electroluminescent element in which at least an anode, a light emission layer and a cathode are laminated, wherein at least one light emission layer possesses two kinds of light-emitting dopants, the method comprising the step of conducting a process in which the organic EL element is subjected to an annealing treatment after forming at least the anode, the at least one light emission layer and the cathode as an element structure. By the method of the present invention, a stably manufacturable organic electroluminescent element exhibiting high light emission efficiency and long lifetime is possible to be prepared, and a white light-emitting organic electroluminescent element is suitably prepared. | 2011-01-27 |
20110017988 | ORGANIC ELECTROLUMINESCENT ELEMENT, LIGHTING DEVICE AND DISPLAY DEVICE - Disclosed is an organic EL device element having high external quantum efficiency and long life time. A lighting device and a display device each using the organic EL device element are also disclosed. The organic EL element comprises plural organic compound layers including a light-emitting layer and at least one hole transport layer, interposed between an anode and a cathode, and a phosphorescent light-emitting compound contained in the light-emitting layer emits light. The organic EL device is characterized in that at least one hole-transport layer contains two or more polymerizable compounds represented by general Formula (1) or two or more polymer compounds having a structural unit derived from a compound. | 2011-01-27 |
20110017989 | PIXEL STRUCTURE, ORGANIC ELECTRO-LUMINESCENCE DISPLAY UNIT, AND FABRICATING METHOD THEREOF - A pixel structure is disposed on a substrate and includes a gate, a gate insulating layer, a patterned metal-oxide layer, an etching stop layer, a source, and a drain. The gate is disposed on the substrate. The gate insulating layer is disposed on the substrate to cover the gate. The patterned metal-oxide layer is disposed on the gate insulating layer and includes an active layer located above the gate and a pixel electrode. The etching stop layer is disposed on a portion of the active layer. Conductivity of a portion of the patterned metal-oxide layer uncovered by the etching stop layer is greater than conductivity of a portion of the patterned metal-oxide layer covered by the etching stop layer. The source and the drain are electrically connected to a portion of the active layer uncovered by the etching stop layer. The drain is electrically connected to the pixel electrode. | 2011-01-27 |
20110017990 | Thin-film transistor and method of manufacturing the same - Example embodiments relate to thin-film transistors (TFT) and methods for fabricating the same. A thin-film transistor according to example embodiments may include a gate, a gate insulation layer, a channel layer including a first oxide semiconductor layer and a second oxide semiconductor layer, and a source and drain on opposite sides of the channel layer. The first oxide semiconductor layer may have relatively large crystal grains compared to the second oxide semiconductor layer. | 2011-01-27 |
20110017991 | SEMICONDUCTOR DEVICE - In this junction element | 2011-01-27 |
20110017992 | THIN FILM TRANSISTOR - A thin film transistor includes a first insulating layer covering the gate electrode layer; source and drain regions which at least partly overlaps with the gate electrode layer; a pair of second insulating layers which is provided apart from each other in a channel length direction over the first insulating layer and which at least partly overlaps with the gate electrode layer and the pair of impurity semiconductor layers; a pair of microcrystalline semiconductor layers provided apart from each other on and in contact with the second insulating layers; and an amorphous semiconductor layer covering the first insulating layer, the pair of second insulating layers, and the pair of microcrystalline semiconductor layers and which extends to exist between the pair of microcrystalline semiconductor layers. The first insulating layer is a silicon nitride layer and each of the pair of the second insulating layers is a silicon oxynitride layer. | 2011-01-27 |
20110017993 | TFT SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - There is provided a TFT substrate including a gate electrode having a thick film part and a thin film part with a smaller film thickness than the thick film part, a semiconductor active film formed above the thick film part and the thin film part of the gate electrode, an ohmic contact film formed on an inside of the semiconductor active film and on the semiconductor active film corresponding to the thin film part on an outside of the thick film part, and an electrode film constituting a source electrode and a drain electrode, having a planar shape identical to or on an inside of the ohmic contact film, and formed on the ohmic contact film. | 2011-01-27 |
20110017994 | PIXEL ARRAY - A pixel array includes scan lines, data lines, and pixels. Each pixel arranged in the n | 2011-01-27 |
20110017995 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to increase the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using a metal and a channel layer is formed using an oxide semiconductor, and a driver circuit wiring formed using a metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode and a drain electrode are formed using an oxide conductor and a semiconductor layer is formed using an oxide semiconductor, and a display portion wiring formed using an oxide conductor. The thin film transistors provided in the semiconductor device are formed with a resist mask formed using a multi-tone mask. | 2011-01-27 |
20110017996 | LIGHT-EMITTING DEVICE - An Object of the Present Invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous. | 2011-01-27 |
20110017997 | Diffusion Barrier Coated Substrates and Methods of Making the Same - Semiconductor devices on a diffusion barrier coated metal substrates, and methods of making the same are disclosed. The semiconductor devices include a metal substrate, a diffusion barrier layer on the metal substrate, an insulator layer on the diffusion barrier layer, and a semiconductor layer on the insulator layer. The method includes forming a diffusion barrier layer on the metal substrate, forming an insulator layer on the diffusion barrier layer; and forming a semiconductor layer on the insulator layer. Such diffusion barrier coated substrates prevent diffusion of metal atoms from the metal substrate into a semiconductor device formed thereon. | 2011-01-27 |
20110017998 | SEMICONDUCTOR DEVICE - The semiconductor device of the present invention includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of the semiconductor region, and an electroconductive gate electrode formed on the insulating film. The gate electrode is made of a material whose Fermi level is closer to a Fermi level of the semiconductor region than a Fermi level of Si in at least a portion contiguous to the insulating film. | 2011-01-27 |
20110017999 | Array substrate and method of fabricating the same - An array substrate includes first and second gate electrodes on a substrate; a gate insulating layer on the first and second gate electrodes; first and second active layers on the gate insulating layer; an interlayer insulating layer on the first and second active layers; first to fourth ohmic contact layers respectively contacting both sides of the first active layer and both sides of the second active layer; first and second source electrodes and first and second drain electrodes respectively on the first, third, second and fourth ohmic contact layers; a data line connected to the first source electrode; a first passivation layer connected to the first gate electrode; a power line; one end and the other end of a connection electrode respectively connected to the first drain electrode and the second gate electrode; a second passivation layer; and a pixel electrode-connected to the second drain electrode. | 2011-01-27 |
20110018000 | DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - Disclosed is a method of fabricating a display device that includes forming a buffer layer; forming a gate electrode of extrinsic polycrystalline silicon, a gate insulating layer, an active layer of intrinsic polycrystalline silicon and an auxiliary active layer of intrinsic amorphous silicon on the buffer layer; forming an ohmic contact layer of extrinsic amorphous silicon and contacting the auxiliary active layer, source and drain electrodes and a data line; patterning a first passivation layer, an insulating interlayer and the gate insulating layer to form a gate contact hole exposing the gate electrode; forming a gate line on the first passivation layer, made of a metal material, and contacting the gate electrode through the gate contact hole; forming a second passivation layer on the gate line; patterning the first and second passivation layers to form a drain contact hole exposing the drain electrode; and forming a pixel electrode on the second passivation layer in the pixel region and contacting the drain electrode through the drain contact hole. | 2011-01-27 |
20110018001 | GATE DRIVER ON ARRAY OF A DISPLAY - A gate driver on array of a display includes a substrate having a peripheral region, and a gate driver on array structure formed in the peripheral region. The gate driver on array structure includes a pull-down transistor, and the pull-down transistor has a gate electrode, an insulating layer, a semiconductor island, a source electrode, and a drain electrode. The semiconductor island extends out of both edges of the gate electrode, and extends out of an edge of the source electrode and an edge of the drain electrode. | 2011-01-27 |
20110018002 | TRANSISTORS AND RECTIFIERS UTILIZING HYBRID ELECTRODES AND METHODS OF FABRICATING THE SAME - Systems, methods, and apparatus described herein are associated with devices including hybrid electrodes. A heterostructure semiconductor transistor can include a III-N-type semiconductor heterostructure including a barrier layer overlying an active layer and a hybrid electrode region including a hybrid drain electrode region. Further, a heterostructure semiconductor rectifier can include a III-N-type semiconductor heterostructure and a hybrid electrode region including a hybrid cathode electrode region. Furthermore, the hybrid electrode region of the transistor and rectifier can include permanently trapped charge located under a Schottky contact of the hybrid electrode region. | 2011-01-27 |
20110018003 | GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF - A method of manufacturing a group III nitride semiconductor substrate includes the growth step of epitaxially growing a first group III nitride semiconductor layer on an underlying substrate, and the process step of forming a first group III nitride semiconductor substrate by cutting and/or surface-polishing the first group III nitride semiconductor layer. In the growth step, at least one element selected from the group consisting of C, Mg, Fe, Be, Zn, V, and Sb is added as an impurity element by at least 1×10 | 2011-01-27 |
20110018004 | SEMICONDUCTOR DEVICE WITH LARGE BLOCKING VOLTAGE AND MANUFACTURING METHOD THEREOF - There is no effective method for fabricating a semiconductor power device containing UMOSFET possessing large channel mobility and whose threshold voltage can be lowered with no loss in blocking voltage. A semiconductor device with large blocking voltage is provided utilizing silicon carbide trench MOSFET possessing both narrow regions where the p body concentration is low, and wide regions where the p body concentration is high. | 2011-01-27 |
20110018005 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device of the present invention includes a semiconductor layer composed of SiC, a metal layer directly bonded to one face of the semiconductor layer, and a high carbon concentration layer formed on a surface layer portion at one side of the semiconductor layer and containing more highly concentrated carbon than a surface layer portion of the other side. Further, a manufacturing method of a semiconductor device of the present invention includes the steps of forming, on a surface layer portion at one face side of a semiconductor layer composed of SiC, a high carbon concentration layer containing more highly concentrated carbon than a surface layer portion at the other face side by heat treatment and directly bonding metal to the high carbon concentration layer. | 2011-01-27 |
20110018006 | MICRO-SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE HAVING EMITTING LAYER INCLUDING SILICON NANO-DOT, SEMICONDUCTOR LIGHT-EMITTING DIODE ARRAY INCLUDING THE MICRO-SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE, AND METHOD OF FABRICATING THE MICRO-SIZED SEMICONDUCTOR LIGHT-EMITTING DIODE - A micro-sized semiconductor light-emitting diode includes an emission material layer formed on a silicon substrate, and including a silicon nano-dot; a hole injecting layer and an electron injecting layer that face each other, wherein the hole injecting layer and an electron injecting layer are formed between the emission material layer; a transparent conductive electrode layer formed on the electron injecting layer; and a first electrode and a second electrode that respectively inject a current in the hole injecting layer and the transparent conductive electrode layer from the outside. | 2011-01-27 |
20110018007 | ELECTRONIC DEVICE, DISPLAY APPARATUS, AND ELECTRONIC DEVICE MANUFACTURING METHOD - Provided is a solution for narrowing of a light emitting region, increasing of leak current at an edge of a functional layer, peeling of the functional layer, or the like caused by non-uniform thickness of the functional layer at the edges thereof. Provided is an electronic device comprising a substrate; a conductive functional layer formed on the substrate; and an edge covering layer that covers edges of the functional layer, wherein the functional layer includes a functional region that is not covered by the edge covering layer. This functional layer may include a non-functional region that is made non-functional by covering the functional layer with the edge covering layer. The edge covering layer may be adhered to the substrate by an adhesion force that is greater than an adhesion force between the substrate and the functional layer. | 2011-01-27 |
20110018008 | Organic light emitting diode display and method for manufacturing the same - An organic light emitting diode display comprises a display substrate including an organic light emitting element, an encapsulation substrate disposed to face the display substrate, a sealant disposed between edges of the display substrate and the encapsulation substrate for bonding and sealing the display substrate and the encapsulation substrate together, a filler filling in a space between the display substrate and the encapsulation substrate, first spacers formed on one surface of the display substrate contacting the filler, and second spacers formed on one surface of the encapsulation substrate contacting the filler. The display substrate and the encapsulation substrate are divided into a dropping area and a spreading area surrounding the dropping area and positioned relatively close to the sealant, and either or both of the first spacers and the second spacers have different shapes in the dropping area and in the spreading area. | 2011-01-27 |
20110018009 | Light-Emitting Device - A light-emitting device comprising a light-emitting layer ( | 2011-01-27 |
20110018010 | INFRARED LIGHT EMITTING DEVICE - Provided is an infrared light emitting device in which dark current and diffusion current caused by thermally excited holes are suppressed. Thermally excited carriers (holes) generated in a first n-type compound semiconductor layer ( | 2011-01-27 |
20110018011 | Solid-state light source - A solid-state light source includes at least one stack of light emitting elements. The elements are an inorganic light emitting diode chip and at least one wavelength conversion chip or the elements are a plurality of light emitting diode chips and one or more optional wavelength conversion chips. The wavelength conversion chip may include an electrical interconnection means. The light emitting diode chip may include at least one GaN-based semiconductor layer that is at least ten microns thick and that is fabricated by hydride vapor phase epitaxy. A method is described for fabricating the solid-state light source. | 2011-01-27 |
20110018012 | LED LIGHTING DEVICE - The LED lighting device in this invention comprises a light source, a first face sheet, and a reflection sheet. The light source comprises a plurality of LED chips which are configured to emit lights having wavelengths which are different from each other. The first face sheet has a rear surface. The rear surface is defined as a diffusing and reflecting surface which is being configured to diffuse and reflect the lights which are emitted from the LED chips. The first face sheet is provided with a plurality of apertures. The reflection sheet has a second reflecting surface. The second reflecting surface is configured to reflect the light which is reflected from the diffusing and reflecting surface of the first face sheet toward the first face sheet. Each the aperture is shaped to pass the light which is reflected from the second reflecting surface. Each the aperture is configured to prevent the light which is directly emitted by the light from being passed through the aperture without being subjected to any reflection. | 2011-01-27 |
20110018013 | THIN-FILM FLIP-CHIP SERIES CONNECTED LEDS - A light-emitting diode (LED) is fabricated by forming the LED segments with bond pads covering greater than 85% of a mounting surface of the LED segments and isolation trenches that electrically isolate the LED segments, mounting the LED segments on a submount with a bond pad that couples two or more bond pads from the LED segments, and applying a laser lift-off to remove the growth substrate from the LED layer. | 2011-01-27 |
20110018014 | LIGHT EMITTING DIODE COMPONENT - In a lighting package, a printed circuit board supports at least one light emitting die. A light transmissive cover is disposed over the at least one light emitting die. A phosphor is disposed on or inside of the light transmissive dome-shaped cover. The phosphor outputs converted light responsive to irradiation by the at least one light emitting die. An encapsulant substantially tills an interior volume defined by the light-transmissive cover and the printed circuit board. | 2011-01-27 |
20110018015 | CONTACT FOR A SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A p-electrode is disposed on a portion of the p-type region. The p-electrode includes a reflective first material in direct contact with a first portion of the p-type region and a second material in direct contact with a second portion of the p-type region adjacent to the first portion. The first material and second material are formed in planar layers of substantially the same thickness. | 2011-01-27 |
20110018016 | REDUCED COLOR OVER ANGLE VARIATION LEDS - A light emitting diode (LED) package includes an LED die includes a stack of semiconductor layers including an active region, and a wavelength converting element over the LED die. The wavelength converting element includes two or more non-flat surfaces that produce a desired angular color distribution pattern. | 2011-01-27 |
20110018017 | LED WITH MOLDED REFLECTIVE SIDEWALL COATING - A submount wafer, having mounted on it an array of LEDs with a phosphor layer, is positioned with respect to a mold having an array of indentions. A mixture of silicone and 10%-50%, by weight, TiO | 2011-01-27 |
20110018018 | SEMICONDUCTOR CHIP PACKAGE STRUCTURE FOR ACHIEVING ELECTRICAL CONNECTION WITHOUT USING WIRE-BONDING PROCESS AND METHOD FOR MAKING THE SAME - A semiconductor chip package structure for achieving electrical connection without using wire-bonding process includes an insulative substrate unit, a package unit, a semiconductor chip, a first conductive unit, an insulative unit and a second conductive unit. The package unit is disposed on the insulative substrate unit to form a receiving groove. The semiconductor chip is received in the receiving groove. The semiconductor chip has a plurality of conductive pads. The first conductive unit has a plurality of first conductive layers formed on the package body, and one side of each first conductive layer is electrically connected to each conductive pad. The insulative unit has an insulative layer formed between the first conductive layers in order to insulate the first conductive layers from each other. The second conductive unit has a plurality of second conductive layers respectively formed on another sides of the first conductive layers. | 2011-01-27 |
20110018019 | SEMICONDUCTOR CHIP PACKAGE STRUCTURE FOR ACHIEVING FLIP-CHIP TYPE ELECTRICAL CONNECTION WITHOUT USING WIRE-BONDING PROCESS AND METHOD FOR MAKING THE SAME - A semiconductor chip package structure for achieving flip-chip electrical connection without using a wire-bonding process includes a package unit, a semiconductor chip, a first insulative layer, first conductive layers, a second insulative layer, and second conductive layers. The package unit has a receiving groove. The semiconductor chip is received in the receiving groove and has a plurality of conductive pads disposed on its top surface. The first insulative layer is formed between the conductive pads to insulate the conductive pads. The first conductive layers are formed on the first insulative layer and the package unit, and one side of each first conductive layer is electrically connected to the corresponding conductive pad. The second insulative layer is formed between the first conductive layers in order to insulate the first conductive layers from each other. The second conductive layers are respectively formed on the other opposite sides of the first conductive layers. | 2011-01-27 |
20110018020 | SIDE EMITTING DEVICE WITH WAVELENGTH CONVERSION - A side-emitting light emitting device ( | 2011-01-27 |
20110018021 | LIGHT EMITTING DEVICE PACKAGE AND METHOD FOR FABRICATING THE SAME - Disclosed are a light emitting device package and a method for fabricating the same. The light emitting device package includes: a trench formed in a substrate; a light emitting structure which is directly grown on a first area of the trench in the substrate; an electrode on the substrate; a wire bonding connecting the electrode with the light emitting structure; and | 2011-01-27 |
20110018022 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light-emitting device of the present invention includes: a substrate ( | 2011-01-27 |
20110018023 | ORGANIC ELECTROLUMINESCENCE ELEMENT, LIGHTING DEVICE, AND DISPLAY DEVICE - An object of the present invention is to provide an organic EL element having high light extraction efficiency and to provide a lighting device and a display device provided using the organic EL element. The organic EL element | 2011-01-27 |
20110018024 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND ILLUMINATING APPARATUS USING THE SAME - A semiconductor light emitting element, including: an n-type semiconductor layer having optical transparency with an emission wavelength of a light emitting layer, the light emitting layer and a p-type semiconductor layer, which are laminated; and a reflection film which is disposed on a side opposite to a surface from which light emitted from the light emitting layer is extracted, wherein the reflection film comprises: a transparent layer having optical transparency with the emission wavelength of the light emitting layer, and a metal layer, which is laminated on the transparent layer on a side opposite to the light emitting layer and is constituted by a metal material having a high reflectance, the transparent layer has a refractive index lower than a refractive index of a layer disposed on a side of the light emitting layer when viewed from the transparent layer, with the emission wavelength, and a thickness of the transparent layer is equal to or more than a value obtained by dividing a value of ¾ of the emission wavelength by the refractive index of the transparent layer. | 2011-01-27 |
20110018025 | LIGHT EMITTING DIODE DEVICE - The invention relates to a light emitting diode device comprising a light emitting diode arrangement comprising a flexible substrate ( | 2011-01-27 |
20110018026 | LIGHT EMITTING DEVICE, AND METHOD AND APPARATUS FOR MANUFACTURING SAME - A method for manufacturing a light emitting device includes: measuring at least one of each wavelength of the emitted light of the light emitting element, each optical output of the emitted light of the light emitting element, and each chromaticity of the mixed light emitted through the mixed resin in a manufacturing process of the light emitting device; and adjusting chromaticity for each light emitting device by performing a prescribed chromaticity adjustment with regard to the mixed resin, on basis of a result obtained in the measuring, so that the chromaticity of the mixed light falls within a preset prescribed range. | 2011-01-27 |
20110018027 | Top-emitting light emitting diodes and methods of manufacturing thereof - Provided are a top-emitting nitride based light emitting device having an n-type clad layer, an active layer and a p-type clad layer sequentially stacked thereon, comprising an interface modification layer formed on the p-type clad layer and a transparent conductive thin film layer made up of a transparent conductive material formed on the interface modification layer; and a process for preparing the same. In accordance with the top-emitting nitride-based light emitting device of the present invention and a process for preparing the same, there are provided advantages such as improved ohmic contact with the p-type clad layer, leading to increased wire bonding efficiency and yield upon packaging the light emitting device, capability to improve luminous efficiency and life span of the device due to low specific contact resistance and excellent current-voltage properties. | 2011-01-27 |
20110018028 | SEMICONDUCTOR DEVICE - A horizontal semiconductor device having multiple unit semiconductor elements, each of said unit semiconductor element formed by an IGBT including: a semiconductor substrate of a first conductivity type; a semiconductor region of a second conductivity type formed on the semiconductor substrate; a collector layer of the first conductivity type formed within the semiconductor region; a ring-shaped base layer of the first conductivity type formed within the semiconductor region such that the base layer is off said collector layer but surrounds said collector layer; and a ring-shaped first emitter layer of the second conductivity type formed in said base layer, wherein movement of carriers between the first emitter layer and the collector layer is controlled in a channel region formed in the base layer, and the unit semiconductor elements are disposed adjacent to each other. | 2011-01-27 |
20110018029 | SEMICONDUCTOR DEVICE HAVING A FLOATING SEMICONDUCTOR ZONE - A semiconductor device includes a first trench and a second trench extending into a semiconductor body from a surface. A body region of a first conductivity type adjoins a first sidewall of the first trench and a first sidewall of the second trench, the body region including a channel portion adjoining to a source structure and being configured to be controlled in its conductivity by a gate structure. The channel portion is formed at the first sidewall of the second trench and is not formed at the first sidewall of the first trench. An electrically floating semiconductor zone of the first conductivity type adjoins the first trench and has a bottom side located deeper within the semiconductor body than the bottom side of the body region. | 2011-01-27 |
20110018030 | SEMICONDUCTOR WAFER, SEMICONDUCTOR WAFER MANUFACTURING METHOD, AND ELECTRONIC DEVICE - A high-quality GaAs-type crystal thin film using an inexpensive Si water with good thermal release characteristics is achieved. Provided is a semiconductor wafer comprising an Si wafer; an inhibiting layer that is formed on the wafer and that inhibits crystal growth, the inhibiting layer including a covering region that covers a portion of the wafer and an open region that does not cover a portion of the wafer within the covering region; a Ge layer that is crystal-grown in the open region; a buffer layer that is crystal-grown on the Ge layer and is a group 3-5 compound semiconductor layer containing P; and a functional layer that is crystal-grown on the buffer layer. The Ge layer may be formed by annealing with a temperature and duration that enables movement of crystal defects. | 2011-01-27 |
20110018031 | TRANSISTOR GATE ELECTRODE HAVING CONDUCTOR MATERIAL LAYER - Various embodiments of the invention relate to a PMOS device having a transistor channel of silicon germanium material on a substrate, a gate dielectric having a dielectric constant greater than that of silicon dioxide on the channel, a gate electrode conductor material having a work function in a range between a valence energy band edge and a conductor energy band edge for silicon on the gate dielectric, and a gate electrode semiconductor material on the gate electrode conductor material. | 2011-01-27 |
20110018032 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor device is provided which is capable of suppressing a reduction in electron mobility in a channel region formed in a strained silicon layer. A strained silicon layer is formed over a p type silicon-germanium layer formed over a semiconductor substrate. The strained layer has a thickness adjusted to be thicker than the critical film thickness at which no misfit dislocation occurs. Accordingly, misfit dislocations occur in the vicinity of the interface between the strained silicon layer and silicon-germanium layer. | 2011-01-27 |
20110018033 | SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - It is an objective of the present invention to form a favorable interface between an oxide layer and a group 3-5 compound semiconductor using a practical and simple method. | 2011-01-27 |
20110018034 | HETEROGENEOUS INTEGRATION OF LOW NOISE AMPLIFIERS WITH POWER AMPLIFIERS OR SWITCHES - A transistor heterogeneously integrating a power amplifier or switch with a low-noise amplifier having a substrate wafer selected from a group consisting of Gallium Arsenide (GaAs), Indium Phosphate (InP) and Gallium Antimonide (GaSb), the substrate having a first end and a second end, a conducting layer above the first end of the substrate, an isolation implant providing lateral isolation in the conducting layer, a first active layer deposited above the conducting layer and configured for the low-noise amplifier, and a buffer layer deposited above the conducting layer and configured for the low-noise amplifier. | 2011-01-27 |
20110018035 | Offset Geometries for Area Reduction in Memory Arrays - An array with cells that have adjacent similar structures that are displaced from each other across a common cell border in a direction that is not perpendicular to the cell border thus avoiding an across cell border design rule violation between the adjacent similar structures. A method of forming reduced area memory arrays by displacing adjacent similar structures along a common cell border. A method of building arrays using conventional array building software by forming unit pairs with cells that are not identical and are not mirror images or rotated versions of each other. | 2011-01-27 |