| 03rd week of 2013 patent applcation highlights part 12 |
| Patent application number | Title | Published |
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| 20130015405 | ISOTHERMAL REACTOR FOR PARTIAL OXIDATION OF METHANEAANM Quintero; Ruben Dario RodriguezAACI AberdeenAACO GBAAGP Quintero; Ruben Dario Rodriguez Aberdeen GBAANM Diaz; Ernesto Manuel SantanaAACI AberdeenAACO GBAAGP Diaz; Ernesto Manuel Santana Aberdeen GBAANM Banister; James AndrewAACI AberdeenAACO GBAAGP Banister; James Andrew Aberdeen GB - There is herein described a process and apparatus for partial oxidation of hydrocarbons. More particularly, there is described a process and an isothermal reactor apparatus for the partial oxidation of methane which comprises a heat transfer surface, a porous catalytic membrane and wherein heat is disipated and/or removed through the heat transfer surface. | 2013-01-17 |
| 20130015406 | GAS DEACIDIZING METHOD USING AN ABSORBENT SOLUTION WITH RELEASE OF A GASEOUS EFFLUENT FROM THE ABSORBENT SOLUTION AND WASHING OF THE EFFLUENT WITH THE REGENERATED ABSORBENT SOLUTIONAANM Gazarian; JeremyAACI CondrieuAACO FRAAGP Gazarian; Jeremy Condrieu FRAANM Bouillon; Pierre-AntoineAACI LyonAACO FRAAGP Bouillon; Pierre-Antoine Lyon FRAANM Jacquin; MarcAACI LyonAACO FRAAGP Jacquin; Marc Lyon FR - The invention relates to a method for deacidizing a gas feed comprising acid compounds. | 2013-01-17 |
| 20130015407 | SOLID ACID CATALYST AND METHOD FOR PREPARING AND USING THE SAME - A process for using a solid acid catalyst having a strong acid cation exchange resin having a cross-linking network structure and free aromatic sulfonic acids adsorbed in the network for synthesis of rubber antioxidant RD and other strong-acid catalyzed reactions. | 2013-01-17 |
| 20130015408 | MATERIAL FOR ABSORPTION AND ATTENUATION OF RADIATIONSAANM CARUNCHO RODADO; Juan ManuelAACI La CorunaAACO ESAAGP CARUNCHO RODADO; Juan Manuel La Coruna ES - Products for obtaining masses for pouring, bricks, tiles and any other format are achieved, in which participate aggregates and asphaltic binders, as well as also additives for regulating the process. The invention achieves a remarkable increase in the capacity of neutrons, X-rays and/or photons radiation protection, and for this the use of asphaltic hydrocarbon as binder has been envisaged, while as aggregate is used Colemanite in absorption and attenuation of neutrons, Barite in the case of X-rays and Magnetite, Hematite and/or Steel shot in the case of photons. | 2013-01-17 |
| 20130015409 | GRAPHENE OXIDE SHEET, ARTICLE CONTAINING GRAPHENE-CONTAINING SUBSTANCE PRODUCED BY REDUCING THE GRAPHENE OXIDE SHEET, AND PROCESS FOR PRODUCTION OF THE GRAPHENE OXIDE SHEETAANM Fugetsu; BunshiAACI Sapporo-shiAACO JPAAGP Fugetsu; Bunshi Sapporo-shi JP - [Means for solving] | 2013-01-17 |
| 20130015410 | POSITIVE ELECTRODE ACTIVE MATERIALAANM Hashiba; YujiAACI NaritaAACO JPAAGP Hashiba; Yuji Narita JPAANM Yoshimura; KeiAACI InzaiAACO JPAAGP Yoshimura; Kei Inzai JPAANM Tachizono; ShinichiAACI NaritaAACO JPAAGP Tachizono; Shinichi Narita JPAANM Naito; TakashiAACI FunabashiAACO JPAAGP Naito; Takashi Funabashi JPAANM Aoyagi; TakuyaAACI HitachiAACO JPAAGP Aoyagi; Takuya Hitachi JPAANM Fujieda; TadashiAACI MitoAACO JPAAGP Fujieda; Tadashi Mito JP - A lithium ion secondary battery has a high cycle retention rate, and has its battery capacity increased. A positive electrode active material is used which includes a crystal phase having a structure formed by collecting a plurality of crystallites | 2013-01-17 |
| 20130015411 | METHOD FOR MANUFACTURING A WHOLLY AROMATIC POLYIMIDE POWDER HAVING AN ANTISTATIC OR CONDUCTIVE PROPERTYAANM Kang; Jin SooAACI DaejeonAACO KRAAGP Kang; Jin Soo Daejeon KRAANM Hwang; Yong JaeAACI Bucheon-siAACO KRAAGP Hwang; Yong Jae Bucheon-si KR - The present invention relates to a method for preparing wholly aromatic polyimide powder with antistatic properties or electric conductivity. In particular, the present invention relates to a method for preparing wholly aromatic polyimide composite powder, comprising the steps of dissolving aromatic diamine in a phenolic polar organic solvent in which electrically conductive carbon black powder and multi-wall carbon nano-tube (MWCNT) powder are dispersed, adding aromatic tetracarboxylic dianhydride thereto, and polymerizing the resulting mixture. | 2013-01-17 |
| 20130015412 | COMPOUND SEMICONDUCTORS AND THEIR APPLICATION - Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: In | 2013-01-17 |
| 20130015413 | COMPOUND SEMICONDUCTORS AND THEIR APPLICATION - Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: In | 2013-01-17 |
| 20130015414 | AlxGa1-xN Crystal Substrate | 2013-01-17 |
| 20130015415 | DIELECTRIC FLUIDS COMPRISING ESTOLIDE COMPOUNDS AND METHODS OF MAKING AND USING THE SAME - Provided herein are dielectric fluids comprising at least one estolide compound of formula: | 2013-01-17 |
| 20130015416 | PHOTOCHROMIC CURABLE COMPOSITIONAANM Takenaka; JunjiAACI Shunan-shiAACO JPAAGP Takenaka; Junji Shunan-shi JPAANM Momoda; JunjiAACI Shunan-shiAACO JPAAGP Momoda; Junji Shunan-shi JP - A photochromic curable composition comprising 100 parts by mass of polymerizable monomers which include 70 to 100 mass % of polymerizable monomers having two to four (meth)acrylic groups and 0 to 30 mass % of a polymerizable monomer having one (meth)acrylic group and 0.01 to 20 parts by mass of a photochromic compound, wherein
| 2013-01-17 |
| 20130015417 | BROAD WAVELENGTH RANGE CHEMICALLY-TUNABLE PHOTONIC MATERIALS - The present invention provides polymeric materials arranged as photonic crystals, or portions of photonic crystals, having properties which can be easily tuned over a large range of wavelengths upon exposure to an external stimulus. In some embodiments, the photonic crystals comprise at least one portion which can undergo a change in a physical, chemical, dielectric, or other property upon exposure to an altering stimulus, resulting in a change in a diffracted wavelength of electromagnetic radiation (e.g, light) by the photonic crystal. Embodiments of the invention may advantageously exhibit large stop band tunability and rapid response times. Photonic crystals of the invention may be useful in a wide variety of applications, such as colorimetric sensors, active components of simple display devices, electrically controlled tunable optically pumped laser, photonic switches, multiband filters, and the like. | 2013-01-17 |
| 20130015418 | Adjustable Bail Arm CouplingAANM Vogel; JohnAACI ColumbusAAST INAACO USAAGP Vogel; John Columbus IN USAANM Reeder; RyanAACI CarmelAAST INAACO USAAGP Reeder; Ryan Carmel IN US - A bail arm assembly for a retractable tarp or cover system for a container, comprises a lower arm configured to be pivotably mounted relative to the container, an upper arm configured to support the tarp or cover, and an adjustable coupling connecting the lower arm to the upper arm. The adjustable coupling includes a pair of opposing engagement faces configured to permit selective adjustment of the angular relationship between the lower and upper arms at discrete angular intervals. | 2013-01-17 |
| 20130015419 | Stringing block for aerial electric conductorAANM Tukachinsky; Arie LeibAACI HaifaAACO ILAAGP Tukachinsky; Arie Leib Haifa IL - A stringing block for aerial electric conductor or other aerial cable, intended for hanging to electric line structures, insulators etc., suitable for both manual and helicopter pilot line or conductor stringing, is disclosed. The block comprises one or more ring-shaped sheaves, each one running over one or two small wheels, installed on a small size frame and rotating around their axes. The block is light enough for to prevent conductor/pilot line escaping the shave groove and friction on the shave flange. | 2013-01-17 |
| 20130015420 | POST-CABLE CONNECTION FOR A ROADWAY BARRIER - A post-cable connection for releasably connecting a cable to a post, for example in a roadway cable barrier system. A hairpin shaped post-cable connector is hung from the top end of a post whereby when the post is impacted and urged toward ground level the cable is released from the post. The hairpin shaped post-cable connector has an elongated section forming a loop disposing a cable and a top section extending between the elongated section and a hook end section. | 2013-01-17 |
| 20130015421 | PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAMEAANM SIM; Joon SeopAACI Ichon-siAACO KRAAGP SIM; Joon Seop Ichon-si KRAANM Son; Jae HyunAACI Ichon-siAACO KRAAGP Son; Jae Hyun Ichon-si KRAANM Lee; Dae WoongAACI Ichon-siAACO KRAAGP Lee; Dae Woong Ichon-si KRAANM Oh; Young HoonAACI Ichon-siAACO KRAAGP Oh; Young Hoon Ichon-si KR - A phase change random access memory (PCRAM) device and method of manufacturing the same are provided. The PCRAM includes bottom electrode contacts formed on a semiconductor substrate that includes a lower structure, phase-change material patterns in contact with the bottom electrode contacts, respectively, and heat insulating units formed between the phase-change material patterns. | 2013-01-17 |
| 20130015422 | REACTIVE METAL IMPLATED OXIDE BASED MEMORY - Methods, devices, and systems associated with oxide based memory can include a method of forming an oxide based memory cell. Forming an oxide based memory cell can include forming a first conductive element, forming an oxide over the first conductive element, implanting a reactive metal into the oxide, and forming a second conductive element over the oxide. | 2013-01-17 |
| 20130015423 | METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT, AND NONVOLATILE SEMICONDUCTOR MEMORY ELEMENTAANM Mikawa; TakumiAACI ShigaAACO JPAAGP Mikawa; Takumi Shiga JPAANM Hayakawa; YukioAACI KyotoAACO JPAAGP Hayakawa; Yukio Kyoto JPAANM Kawashima; YoshioAACI OsakaAACO JPAAGP Kawashima; Yoshio Osaka JPAANM Ninomiya; TakekiAACI OsakaAACO JPAAGP Ninomiya; Takeki Osaka JP - Provided is a method for manufacturing a variable resistance nonvolatile semiconductor memory element, and a nonvolatile semiconductor memory element which make it possible to operate at a low voltage and high speed when initial breakdown is caused, and exhibit favorable diode element characteristics. The method for manufacturing the nonvolatile semiconductor memory element includes, after forming a top electrode of a variable resistance element and at least before forming a top electrode of an MSM diode element, oxidizing to insulate a portion of a variable resistance film in a region around an end face of a variable resistance layer. | 2013-01-17 |
| 20130015424 | OPTOELECTRONIC DEVICESAANM CHUNG; Dae-youngAACI Yongin-siAACO KRAAGP CHUNG; Dae-young Yongin-si KRAANM CHO; Kyung-sangAACI Gwacheon-siAACO KRAAGP CHO; Kyung-sang Gwacheon-si KRAANM KIM; Tae-hoAACI Suwon-siAACO KRAAGP KIM; Tae-ho Suwon-si KRAANM CHOI; Byoung-lyongAACI SeoulAACO KRAAGP CHOI; Byoung-lyong Seoul KR - An optoelectronic device is provided including an element that forms a dipole moment between an active layer and a charge transport layer. The optoelectronic device may include an active layer between a first electrode and a second electrode, a first charge transport layer between the first electrode and the active layer, and a dipole layer between the active layer and the first charge transport layer. A second charge transport layer may be further provided between the second electrode and the active layer. The second dipole layer may be further provided between the second charge transport layer and the active layer. | 2013-01-17 |
| 20130015425 | LIGHT-EMITTING ELEMENT WITH MULTIPLE LIGHT-EMTTING STACKED LAYERSAANM Lin; Yi-ChiehAACI TainanAACO TWAAGP Lin; Yi-Chieh Tainan TWAANM Lee; Rong-RenAACI TainanAACO TWAAGP Lee; Rong-Ren Tainan TW - A light-emitting element includes a substrate; a first light-emitting stacked layer formed on the substrate; a tunneling layer formed on the first light-emitting stacked layer; a second light-emitting stacked layer formed on the tunneling layer; and a contact layer formed on the second light-emitting stacked layer. | 2013-01-17 |
| 20130015426 | METHOD OF MANUFACTURING OF A SEMI-CONDUCTOR ELEMENT AND SEMI-CONDUCTOR ELEMENT - A method of manufacturing of a semi-conductor element, comprising the following steps: providing a substrate, the substrate having a surface, the surface being partially coated with a coating and having at least one uncoated area, and growing a truncated pyramid of gallium nitride on the uncoated area, wherein the method comprises the following step: growing at least one gallium nitride column on the truncated pyramid. | 2013-01-17 |
| 20130015427 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 2013-01-17 |
| 20130015428 | Vertical Stacking of Carbon Nanotube Arrays for Current Enhancement and Control - Transistor devices having vertically stacked carbon nanotube channels and techniques for the fabrication thereof are provided. In one aspect, a transistor device is provided. The transistor device includes a substrate; a bottom gate embedded in the substrate with a top surface of the bottom gate being substantially coplanar with a surface of the substrate; a stack of device layers on the substrate over the bottom gate, wherein each of the device layers in the stack includes a first dielectric, a carbon nanotube channel on the first dielectric, a second dielectric on the carbon nanotube channel and a top gate on the second dielectric; and source and drain contacts that interconnect the carbon nanotube channels in parallel. A method of fabricating a transistor device is also provided. | 2013-01-17 |
| 20130015429 | ALL GRAPHENE FLASH MEMORY DEVICEAANM Hong; Augustin J.AACI Los AngelesAAST CAAACO USAAGP Hong; Augustin J. Los Angeles CA USAANM Kim; Ji-YoungAACI Los AngelesAAST CAAACO USAAGP Kim; Ji-Young Los Angeles CA USAANM Wang; Kang-LungAACI Santa MonicaAAST CAAACO USAAGP Wang; Kang-Lung Santa Monica CA US - A Graphene Flash Memory (GFM) device is disclosed. In general, the GFM device includes a number of memory cells, where each memory cell includes a graphene channel, a graphene storage layer, and a graphene electrode. In one embodiment, by using a graphene channel, graphene storage layer, and graphene electrode, the memory cells of the GFM device are enabled to be scaled down much more than memory cells of a conventional flash memory device. More specifically, in one embodiment, the GFM device has a feature size less than 25 nanometers, less than or equal to 20 nanometers, less than or equal to 15 nanometers, less than or equal to 10 nanometers, or less than or equal to 5 nanometers. | 2013-01-17 |
| 20130015430 | Composite Organic/Inorganic Layer for Organic Light-Emitting DevicesAANM Kwong; RaymondAACI PlainsboroAAST NJAACO USAAGP Kwong; Raymond Plainsboro NJ USAANM Xia; ChuanjunAACI LawrencevilleAAST NJAACO USAAGP Xia; Chuanjun Lawrenceville NJ USAANM Harikrishna Mohan; SiddharthAACI PlainsboroAAST NJAACO USAAGP Harikrishna Mohan; Siddharth Plainsboro NJ USAANM Cheon; Kwang-OhkAACI HollandAAST PAAACO USAAGP Cheon; Kwang-Ohk Holland PA USAANM Brooks; JasonAACI PhiladelphiaAAST PAAACO USAAGP Brooks; Jason Philadelphia PA US - Organic electronic devices comprising a covalently bonded organic/inorganic composite layer. The composite layer may be formed by the reaction of a metal alkoxide with a charge transport compound having one or more hydroxyl groups. Examples of metal alkoxides that can be used include vanadium alkoxides, molybdenum alkoxides, titanium alkoxides, or silicon alkoxides. This composite layer can be used for any of the various charge conducting layers in an organic electronic device, including the hole injection layer. | 2013-01-17 |
| 20130015431 | LITHIUM METAL QUINOLATES AND PROCESS FOR PREPARATION THEREOF AS GOOD EMITTING, INTERFACE MATERIALS AS WELL AS N-TYPE DOPENT FOR ORGANIC ELECTRONIC DEVICESAANM Kamalasanan; Modeeparampil NarayananAACI New DelhiAACO INAAGP Kamalasanan; Modeeparampil Narayanan New Delhi INAANM Srivastava; RituAACI New DelhiAACO INAAGP Srivastava; Ritu New Delhi INAANM Kumar; AmitAACI New DelhiAACO INAAGP Kumar; Amit New Delhi INAANM Singh; IshwarAACI RohtakAACO INAAGP Singh; Ishwar Rohtak INAANM Dhawan; Sandeep KumarAACI New DelhiAACO INAAGP Dhawan; Sandeep Kumar New Delhi INAANM Bawa; Sukhwant SinghAACI New DelhiAACO INAAGP Bawa; Sukhwant Singh New Delhi IN - Invention relates to a single step preparation of alkali metal quinolate of general formula 1 | 2013-01-17 |
| 20130015432 | INORGANIC HOSTS IN OLEDS - A novel electronic device is reported containing a host comprising an inorganic material with a band gap of less than 4 eV. The use of an inorganic material is advantageous due to its desirable physical properties, including increased stability and charge mobility. | 2013-01-17 |
| 20130015433 | PENTACENE-CARBON NANOTUBE COMPOSITE, METHOD OF FORMING THE COMPOSITE, AND SEMICONDUCTOR DEVICE INCLUDING THE COMPOSITE - A method of forming a carbon nanotube-pentacene composite layer, includes depositing on a substrate a dispersion of soluble pentacene precursor and carbon nanotubes, heating the dispersion to remove solvent from the dispersion, and heating the substrate to convert the pentacene precursor to pentacene and form the carbon nanotube-pentacene composite layer. | 2013-01-17 |
| 20130015434 | POLYMER MATRIX ELECTROLUMINESCENT MATERIALS AND DEVICES - Photoluminescent and electroluminescent compositions are provided which comprise a matrix comprising aromatic repeat units and a luminescent metal ion or luminescent metal ion complex. Methods for producing such compositions, and the electroluminescent devices formed therefrom, are disclosed. | 2013-01-17 |
| 20130015435 | PHOTOELECTRIC CONVERSION DEVICE AND IMAGING DEVICEAANM Sawaki; DaigoAACI KanagawaAACO JPAAGP Sawaki; Daigo Kanagawa JPAANM Yofu; KatsuyukiAACI KanagawaAACO JPAAGP Yofu; Katsuyuki Kanagawa JP - A photoelectric conversion device includes an organic photoelectric conversion layer, and suppresses sensitivity degradation caused by the light irradiation. A photoelectric conversion device | 2013-01-17 |
| 20130015436 | SEMICONDUCTOR DEVICEAANM YAMAZAKI; ShunpeiAACI SetagayaAACO JPAAGP YAMAZAKI; Shunpei Setagaya JP - A transistor used for a semiconductor device for high power application needs to have a channel region for obtaining higher drain current. As an example of such a transistor, a vertical (trench type) transistor has been considered; however, the vertical transistor cannot have a high on/off ratio of drain current and thus cannot have favorable transistor characteristics. Over a substrate having conductivity, an oxide semiconductor layer having a surface having a dotted pattern of a plurality of island-shaped regions with a tapered shape in a cross section is sandwiched between a first electrode formed between the substrate and the oxide semiconductor layer and a second electrode formed over the oxide semiconductor layer, and a conductive layer functioning as a gate electrode is formed on the side surface of the island-shaped region in the oxide semiconductor layer with an insulating layer provided therebetween. | 2013-01-17 |
| 20130015437 | SEMICONDUCTOR DEVICEAANM YAMAZAKI; ShunpeiAACI SetagayaAACO JPAAGP YAMAZAKI; Shunpei Setagaya JP - A semiconductor device including an oxide semiconductor can have stable electric characteristics and high reliability. A transistor in which an oxide semiconductor layer containing indium, titanium, and zinc is used as a channel formation region and a semiconductor device including the transistor are provided. As a buffer layer in contact with the oxide semiconductor layer, a metal oxide layer containing an oxide of one or more elements selected from titanium, aluminum, gallium, zirconium, hafnium, and a rare earth element can be used. | 2013-01-17 |
| 20130015438 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - One embodiment of the present invention is to achieve high mobility in a device using an oxide semiconductor and provide a highly reliable display device. An oxide semiconductor layer including a crystal region in which c-axis is aligned in a direction substantially perpendicular to a surface is formed and an oxide insulating layer is formed over and in contact with the oxide semiconductor layer. Oxygen is supplied to the oxide semiconductor layer by third heat treatment. A nitride insulating layer containing hydrogen is formed over the oxide insulating layer and fourth heat treatment is performed, so that hydrogen is supplied at least to an interface between the oxide semiconductor layer and the oxide insulating layer. | 2013-01-17 |
| 20130015439 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to improve the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit includes a channel-etched thin film transistor for driver circuit and a driver circuit wiring formed using metal. Source and drain electrodes of the thin film transistor for the driver circuit are formed using a metal. A channel layer of the thin film transistor for the driver circuit is formed using an oxide semiconductor. The display portion includes a bottom-contact thin film transistor for a pixel and a display portion wiring formed using an oxide conductor. Source and drain electrode layers of the thin film transistor for the pixel are formed using an oxide conductor. A semiconductor layer of the thin film transistor for the pixel is formed using an oxide semiconductor. | 2013-01-17 |
| 20130015440 | INTEGRATED CIRCUIT (IC) TEST PROBEAANM Dang; BingAACI ChappaquaAAST NYAACO USAAGP Dang; Bing Chappaqua NY USAANM Knickerbocker; John U.AACI MonroeAAST NYAACO USAAGP Knickerbocker; John U. Monroe NY USAANM Liu; YangAACI OSSININGAAST NYAACO USAAGP Liu; Yang OSSINING NY US - A test probe head for probing integrated circuit (IC) chips and method of making test heads. The test head includes an array of vias (e.g., annular vias or grouped rectangular vias) through, and exiting one surface of, a semiconductor layer, e.g., a silicon layer. The vias, individual test probe tips, may be on a pitch at or less than fifty microns (50 μm). The probe tips may be stiffened with SiO | 2013-01-17 |
| 20130015441 | IC CARD AND BOOKING-ACCOUNT SYSTEM USING THE IC CARD - It is an object of the present invention to provide a highly sophisticated functional IC card that can ensure security by preventing forgery such as changing a picture of a face, and display other images as well as the picture of a face. An IC card comprising a display device and a plurality of thin film integrated circuits; wherein driving of the display device is controlled by the plurality of thin film integrated circuits; a semiconductor element used for the plurality of thin film integrated circuits and the display device is formed by using a polycrystalline semiconductor film; the plurality of thin film integrated circuits are laminated; the display device and the plurality of thin film integrated circuits are equipped for the same printed wiring board; and the IC card has a thickness of from 0.05 mm to 1 mm. | 2013-01-17 |
| 20130015442 | BONDED SEMICONDUCTOR STRUCTURES AND METHOD OF FORMING SAME - Methods of forming semiconductor structures include transferring a portion ( | 2013-01-17 |
| 20130015443 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOFAANM HE; YONGGENAACI BeijingAACO CNAAGP HE; YONGGEN Beijing CNAANM Wu; BingAACI BeijingAACO CNAAGP Wu; Bing Beijing CNAANM Liu; HuanxinAACI BeijingAACO CNAAGP Liu; Huanxin Beijing CN - A method for manufacturing a semiconductor device comprises: forming a recess in a substrate; implanting at the bottom of the recess to form an amorphous layer to a predetermined depth under the bottom of the recess; carrying out crystal orientation selective wet etching to form a Sigma shaped recess by use of the amorphous layer as a stopping layer. Through forming an amorphous layer by means of implantation which is used as a stopping layer in a subsequent wet etching, a Sigma shaped recess with a cuspate bottom is avoided, and a Sigma shaped recess having a planar bottom is obtained, which may further improve semiconductor device performance. | 2013-01-17 |
| 20130015444 | EVAPORATION MASK, METHOD OF MANUFACTURING EVAPORATION MASK, ELECTRONIC DEVICE, AND METHOD OF MANUFACTURING ELECTRONIC DEVICEAANM HIRAI; NobukazuAACI TokyoAACO JPAAGP HIRAI; Nobukazu Tokyo JP - There are provided an evaporation mask with which an evaporated film is allowed to be formed with a fine pattern, a method of manufacturing the same, and a method of manufacturing an electronic device using such an evaporation mask. Further, there is provided an electronic device having a film-formation pattern that is precisely formed with a fine pattern. The evaporation mask including: a substrate including one or a plurality of first opening sections; and a polymer film provided on a first main surface side of the substrate, the polymer film including one or a plurality of second opening sections communicated with the respective first opening sections. | 2013-01-17 |
| 20130015445 | Thin Film Transistor and Method for Manufacturing the SameAANM Liao; Chan-ChangAACI New Taipei CityAACO TWAAGP Liao; Chan-Chang New Taipei City TWAANM Chiu; Hsien-KunAACI Taoyuan CityAACO TWAAGP Chiu; Hsien-Kun Taoyuan City TWAANM Yen; Wei-PangAACI Taoyuan CountyAACO TWAAGP Yen; Wei-Pang Taoyuan County TWAANM Hsu; Chao-HuanAACI Taoyuan CountyAACO TWAAGP Hsu; Chao-Huan Taoyuan County TW - A thin film transistor and a method for manufacturing the same are provided. A top-gate thin film transistor is fabricated by a process using two gray-tone photomasks and a lift-off method. Therefore, the method can save cost of photomasks and processes comparing to a conventional fabrication method. | 2013-01-17 |
| 20130015446 | Thin Film Transistor Manufacturing Method and Thin Film TransistorAANM Qin; ShijianAACI GuangdongAACO CNAAGP Qin; Shijian Guangdong CNAANM He; ChengmingAACI GuangdongAACO CNAAGP He; Chengming Guangdong CN - The present invention provides a thin film transistor (TFT) manufacturing method and a TFT, a source electrode or drain electrode of the TFT is electrically connected to a data line directly during a forming process by providing a through hole in a surface above the data line of the TFT, so as to save the process cost. Further, the source electrode and drain electrode of the TFT are also manufactured with poly-silicon rather than metal material used in prior art, processing steps are simplified, thereby further saving the process cost. | 2013-01-17 |
| 20130015447 | DEFECT-RESISTANT THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOFAANM JUNG; Sang-HunAACI Asani-siAACO KRAAGP JUNG; Sang-Hun Asani-si KRAANM Seo; Dong-WuukAACI Asani-siAACO KRAAGP Seo; Dong-Wuuk Asani-si KRAANM Lee; Sun-JungAACI Yongin-siAACO KRAAGP Lee; Sun-Jung Yongin-si KR - A thin film transistor array panel according to an exemplary embodiment of the present invention includes a substrate; a gate line disposed on the substrate; a gate insulating layer disposed on the gate line; a semiconductor disposed on the gate insulating layer; a data line disposed on the semiconductor and including a source electrode; a drain electrode disposed on the semiconductor and facing the source electrode; a first electrode disposed on the gate insulating layer; a protection electrode disposed on the data line; a passivation layer disposed on the first electrode and the protection electrode; and a second electrode disposed on the passivation layer, wherein the protection electrode comprises the same material as the first electrode. | 2013-01-17 |
| 20130015448 | SEMICONDUCTOR DEVICE AND ELECTROLUMINESCENT DEVICE AND METHOD OF MAKING THE SAMEAANM Yang; Chao-ShunAACI Hsin-ChuAACO TWAAGP Yang; Chao-Shun Hsin-Chu TWAANM Hsieh; Hsing-HungAACI Hsin-ChuAACO TWAAGP Hsieh; Hsing-Hung Hsin-Chu TW - A semiconductor device, disposed on a substrate, includes a first channel layer, a patterned doped layer, a gate insulating layer, a conducting gate electrode, a second channel layer, a first electrode and a second electrode, and a third electrode and a fourth electrode. The first channel layer is disposed on the substrate and in a first region. The patterned doped layer includes a doped gate electrode disposed in a second region, and two contact electrodes electrically connected to two sides of the first channel layer, respectively. The conducting gate electrode is disposed on the gate insulating layer in the first region. The second channel layer is disposed on the gate insulating layer in the second region. The first electrode and the second electrode are electrically connected to the contact electrodes, respectively. The third electrode and the fourth electrode are electrically connected to two sides of the second channel layer, respectively. | 2013-01-17 |
| 20130015449 | PIXEL STRUCTURE AND METHOD OF FABRICATING THE SAMEAANM Lee; Chien-ChihAACI Hsin-ChuAACO TWAAGP Lee; Chien-Chih Hsin-Chu TWAANM Shen; Pei-YiAACI Hsin-ChuAACO TWAAGP Shen; Pei-Yi Hsin-Chu TWAANM Cheng; Ching-YangAACI Hsin-ChuAACO TWAAGP Cheng; Ching-Yang Hsin-Chu TWAANM Huang; Shu-MingAACI Hsin-ChuAACO TWAAGP Huang; Shu-Ming Hsin-Chu TW - The present invention provides a pixel structure including a substrate, a patterned electrode disposed on the substrate, a first insulating layer disposed on the patterned electrode, a common electrode disposed on the first insulating layer, a second insulating layer disposed on the common electrode, and a drain disposed on the second insulating layer. The first insulating layer has a first through hole, and the second insulating layer has a second through hole. The drain includes a first portion electrically connected to the patterned electrode via the first through hole and the second through hole, and a second portion extending onto the common electrode. The common electrode is coupled with the patterned electrode to form a first storage capacitor and is coupled with the second portion to form a second storage capacitor. | 2013-01-17 |
| 20130015450 | Organic Light Emitting Display DeviceAANM Kim; Shin-HanAACI Gyeonggi-DoAACO KRAAGP Kim; Shin-Han Gyeonggi-Do KRAANM Ahn; Byung-ChulAACI SeoulAACO KRAAGP Ahn; Byung-Chul Seoul KRAANM Tak; Yoon-HeungAACI Gyeonggi-DoAACO KRAAGP Tak; Yoon-Heung Gyeonggi-Do KRAANM Han; Chang-WookAACI SeoulAACO KRAAGP Han; Chang-Wook Seoul KRAANM Kim; Do-HyungAACI SeoulAACO KRAAGP Kim; Do-Hyung Seoul KRAANM Lee; Jae-ManAACI SeoulAACO KRAAGP Lee; Jae-Man Seoul KRAANM Choi; Hong-SeokAACI SeoulAACO KRAAGP Choi; Hong-Seok Seoul KRAANM Bae; Sung-JoonAACI Gyeonggi-DoAACO KRAAGP Bae; Sung-Joon Gyeonggi-Do KRAANM Joung; Seung-RyongAACI Gyeonggi-DoAACO KRAAGP Joung; Seung-Ryong Gyeonggi-Do KR - An organic light emitting display device is provided to avoid color change due to a viewing direction. The organic light emitting display includes a light compensation layer having a refractive index different than that of an insulating layer. The organic light emitting display may be disposed at the side to which light emitted from an organic light emitting layer is entered to change the path and phase of light, thereby coinciding cavity peak phases for each wavelength of white light emitted from an organic light emitting unit. | 2013-01-17 |
| 20130015451 | THIN FILM TRANSISTOR MATRIX DEVICE AND METHOD FOR FABRICATING THE SAME - A thin film transistor matrix device including an insulating substrate; a plurality of lines arranged on the substrate, with the lines being defined as odd-number-th lines alternating with even-number-th lines; a first connection line extending in a direction transverse to the plurality of lines, where the first connection line and the odd-number-th lines are configured and arranged to be electrically connected/disconnected to/from each other; and a second connection line extending in a direction transverse to the plurality of lines, where the second connection line and the ven-number-th lines are configured and arranged to be electrically connected/disconnected to/from each other. | 2013-01-17 |
| 20130015452 | ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE ARRAY SUBSTRATE - An array substrate including: a gate electrode and a gate insulation layer disposed on a base substrate, the gate insulation layer having a first thickness in a first region and a second thickness in a second region, the first thickness being greater than the second thickness; a semiconductor pattern disposed on the gate insulation layer in the first region, an end portion of the semiconductor pattern having a stepped portion with respect to the gate insulation layer; an ohmic contact pattern disposed on the semiconductor pattern, an end portion of the ohmic contact pattern opposite to a channel portion being aligned with the end portion of the semiconductor pattern; and source and drain electrodes disposed on the ohmic contact pattern, the source and drain electrodes spaced apart from each other and including first and second thin-film transistor patterns. | 2013-01-17 |
| 20130015453 | DISPLAY DEVICE, THIN-FILM TRANSISTOR USED FOR DISPLAY DEVICE, AND METHOD OF MANUFACTURING THIN-FILM TRANSISTOR - A display device including a display element and a thin-film transistor for controlling light emission from the display element. The thin-film transistor includes: a gate electrode formed on an insulating support substrate; a gate insulating film formed on the substrate so as to cover the gate electrode; a channel layer formed on the gate insulating film; a channel protective layer formed on the top surface of the channel layer; a pair of contact layers formed on the top surface of the channel protective layer and connected to the channel layer; and a source electrode and a drain electrode each connected to the pair of contact layers. The pair of contact layers has an interface contacting the side surface of the channel layer. | 2013-01-17 |
| 20130015454 | PANEL STRUCTURE, DISPLAY DEVICE INCLUDING SAME, AND METHODS OF MANUFACTURING PANEL STRUCTURE AND DISPLAY DEVICE - Via holes for connecting elements of the panel structure may be formed by performing one process. For example, via holes for connecting a transistor and a conductive layer spaced apart from the transistor may be formed by performing only one process. | 2013-01-17 |
| 20130015455 | GERMANIUM-CONTAINING RELEASE LAYER FOR TRANSFER OF A SILICON LAYER TO A SUBSTRATE - A germanium-containing layer is deposited on a single crystalline bulk silicon substrate in an ambient including a level of oxygen partial pressure sufficient to incorporate 1%-50% of oxygen in atomic concentration. The thickness of the germanium-containing layer is preferably limited to maintain some degree of epitaxial alignment with the underlying silicon substrate. Optionally, a graded germanium-containing layer can be grown on, or replace, the germanium-containing layer. An at least partially crystalline silicon layer is subsequently deposited on the germanium-containing layer. A handle substrate is bonded to the at least partially crystalline silicon layer. The assembly of the bulk silicon substrate, the germanium-containing layer, the at least partially crystalline silicon layer, and the handle substrate is cleaved within the germanium-containing layer to provide a composite substrate including the handle substrate and the at least partially crystalline silicon layer. Any remaining germanium-containing layer on the composite substrate is removed. | 2013-01-17 |
| 20130015456 | Organic Light Emitting Display Device and Method of Manufacturing the SameAANM You; Chun-GiAACI Yongin-CityAACO KRAAGP You; Chun-Gi Yongin-City KR - In an organic light-emitting display device and a method of manufacturing the same, the display device may include: a thin-film transistor including an active layer, a gate electrode including a first electrode which includes nano-Ag on an insulating layer formed on the active layer and a second electrode on the first electrode, a source electrode, and a drain electrode; an organic light-emitting device including a pixel electrode electrically connected to the thin-film transistor and formed of the same layer as, and using the same material used to form, the first electrode, an intermediate layer including an emissive layer, and an opposite electrode covering the intermediate layer and facing the pixel electrode; and a pad electrode formed of the same layer as, and using the same material used to form, the first electrode in a pad area located outside of a light-emitting area. | 2013-01-17 |
| 20130015457 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAMEAANM You; Chun-GiAACI Yongin-cityAACO KRAAGP You; Chun-Gi Yongin-city KR - An organic light-emitting display device and a method of manufacturing the same. The organic light-emitting display device includes: a thin-film transistor including an active layer, a gate electrode comprising a first electrode and a second electrode on the first electrode, and source and drain electrodes; an organic light-emitting device including a pixel electrode electrically connected to the thin-film transistor and including nano-Ag, an intermediate layer comprising a light-emitting layer, and an opposite electrode covering the intermediate layer and facing the pixel electrode; and a pad electrode formed on the same plane as and formed of the same material as the first electrode in a pad area outside of a light-emitting area. | 2013-01-17 |
| 20130015458 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICEAANM Ko; Sam-MinAACI DaejeonAACO KRAAGP Ko; Sam-Min Daejeon KRAANM Kim; Young-JooAACI Goyang-siAACO KRAAGP Kim; Young-Joo Goyang-si KR - An organic light emitting diode display device includes: a switching thin film transistor in a pixel region, the switching thin film transistor including a switching semiconductor layer of polycrystalline silicon; a driving thin film transistor connected to the switching thin film transistor, the driving thin film transistor including a driving semiconductor layer of polycrystalline silicon layer; and a light emitting diode connected to the driving thin film transistor, wherein a direction of a channel of the switching thin film transistor is parallel to a first direction, and a direction of a channel of the driving thin film transistor is perpendicular to the first direction. | 2013-01-17 |
| 20130015459 | THIN FILM TRANSISTOR ARRAY SUBSTRATE, ORGANIC LIGHT-EMITTING DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE ORGANIC LIGHT-EMITTING DISPLAY DEVICEAANM Lee; June-WooAACI Yongin-CityAACO KRAAGP Lee; June-Woo Yongin-City KRAANM Choi; Jae-BeomAACI Yongin-CityAACO KRAAGP Choi; Jae-Beom Yongin-City KRAANM Jung; Kwan-WookAACI Yongin-CityAACO KRAAGP Jung; Kwan-Wook Yongin-City KRAANM Oh; Jae-HwanAACI Yongin-CityAACO KRAAGP Oh; Jae-Hwan Yongin-City KRAANM Jin; Seong-HyunAACI Yongin-CityAACO KRAAGP Jin; Seong-Hyun Yongin-City KRAANM Kim; Kwang-HaeAACI Yongin-CityAACO KRAAGP Kim; Kwang-Hae Yongin-City KRAANM Choi; Jong-HyunAACI Yongin-CityAACO KRAAGP Choi; Jong-Hyun Yongin-City KR - A thin film transistor (TFT) array substrate includes a TFT on a substrate, the TFT including an active layer, gate electrode, source electrode, drain electrode, first insulating layer between the active layer and the gate electrode, and second insulating layer between the gate electrode and the source and drain electrodes; a pixel electrode on the first insulating layer and the second insulating layer, the pixel electrode being connected to one of the source electrode and drain electrode; a capacitor including a lower electrode on a same layer as the gate electrode and an upper electrode including the same material as the pixel electrode; a third insulating layer directly between the second insulating layer and the pixel electrode and between the lower electrode and the upper electrode; and a fourth insulating layer covering the source electrode, the drain electrode, and the upper electrode, and exposing the pixel electrode. | 2013-01-17 |
| 20130015460 | SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAMEAANM CHEN; Po-ChihAACI Hsinchu CityAACO TWAAGP CHEN; Po-Chih Hsinchu City TWAANM YU; Jiun-Lei JerryAACI Zhudong TownshipAACO TWAAGP YU; Jiun-Lei Jerry Zhudong Township TWAANM YAO; Fu-WeiAACI Hsinchu CityAACO TWAAGP YAO; Fu-Wei Hsinchu City TWAANM HSU; Chun-WeiAACI Taichung CityAACO TWAAGP HSU; Chun-Wei Taichung City TWAANM YANG; Fu-ChihAACI Fengshan CityAACO TWAAGP YANG; Fu-Chih Fengshan City TWAANM TSAI; Chun LinAACI HsinchuAACO TWAAGP TSAI; Chun Lin Hsinchu TW - An embodiment of the disclosure includes a semiconductor structure. The semiconductor structure includes a first III-V compound layer. A second III-V compound layer is disposed on the first III-V compound layer and different from the first III-V compound layer in composition. An interface is defined between the first III-V compound layer and the second III-V compound layer. A gate is disposed on the second III-V compound layer. A source feature and a drain feature are disposed on opposite side of the gate. Each of the source feature and the drain feature includes a corresponding metal feature at least partially embedded in the second III-V compound layer. A corresponding intermetallic compound underlies each metal feature. Each intermetallic compound contacts a carrier channel located at the interface. | 2013-01-17 |
| 20130015461 | Light-emitting Device Capable of Producing White Light And Light Mixing Method For Producing White Light With SameAANM Lin; Kuen-ChiuanAACO USAAGP Lin; Kuen-Chiuan US - A light-emitting device capable of producing white light includes at least two types of LED elements and at least one encapsulant material. Each of the LED elements has an epitaxial light-emitting layer grown on a substrate; and the epitaxial light-emitting layers for the LED elements are the same series of AlGaInN materials having emission wavelengths in a region from violet to green light and different from one another by at least 30 nm. The encapsulant material encapsulates the LED elements and contains an adequate amount of fluorescent powder, which can be excited to emit complementary color lights to mix with color lights from the LED elements to produce bluish, yellowish, greenish or reddish white light. At least two types of the white light-emitting devices can be differently arrayed in a module or a system to produce a white light with high color-rendering index and good light mixing effect. | 2013-01-17 |
| 20130015462 | TRANSISTORS WITH DUAL LAYER PASSIVATION - Semiconductor devices are provided with dual passivation layers. A semiconductor layer is formed on a substrate and covered by a first passivation layer (PL- | 2013-01-17 |
| 20130015463 | NITRIDE-BASED SEMICONDUCTOR DEVICE HAVING EXCELLENT STABILITYAANM LEE; Jae HoonAACI Suwon-siAACO KRAAGP LEE; Jae Hoon Suwon-si KR - A nitride-based semiconductor device is provided. The nitride-based semiconductor device may include an aluminum silicon carbide (AlSi | 2013-01-17 |
| 20130015464 | POWER SEMICONDUCTOR DEVICEAANM HUR; Seung BaeAACI Suwon-siAACO KRAAGP HUR; Seung Bae Suwon-si KRAANM Kim; Ki SeAACI Suwon-siAACO KRAAGP Kim; Ki Se Suwon-si KR - A power semiconductor device and a manufacturing method thereof are provided. The power semiconductor device includes an anode electrode including an anode electrode pad, electrode bus lines connected to a first side and a second side on the anode electrode pad, the electrode bus lines each having a decreasing width in a direction away from the anode electrode pad, and pluralities of first anode electrode fingers and second anode electrode fingers connected with a third side and a fourth side on the anode electrode pad and with both sides of the electrode bus line, a cathode electrode including a first cathode electrode pad and a second cathode electrode pad, a plurality of cathode electrode fingers connected with the first cathode electrode pad, and a plurality of second cathode electrode fingers connected with the second cathode electrode pad, and an insulation layer disposed at an external portion of the anode. | 2013-01-17 |
| 20130015465 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICEAANM LEE; Jae-hoonAACI Suwon-siAACO KRAAGP LEE; Jae-hoon Suwon-si KR - A nitride light-emitting device includes an N-type nitride semiconductor layer; an active layer disposed on the N-type nitride semiconductor layer; and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor includes a heterojunction structure having a GaN layer and an N-type Al | 2013-01-17 |
| 20130015466 | EPITAXIAL SUBSTRATE FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - Provided is an epitaxial substrate for a semiconductor device, which has excellent schottky contact characteristics that are stable over time. The epitaxial substrate for a semiconductor device includes a base substrate, a channel layer formed of a first group III nitride containing at least Ga and having a composition of In | 2013-01-17 |
| 20130015467 | System and Method for Wafer Level PackagingAANM Krumbein; UlrichAACI RosenheimAACO DEAAGP Krumbein; Ulrich Rosenheim DEAANM Lohninger; GerhardAACI MuenchenAACO DEAAGP Lohninger; Gerhard Muenchen DEAANM Dehe; AlfonsAACI ReutlingenAACO DEAAGP Dehe; Alfons Reutlingen DE - In an embodiment, a semiconductor device includes a semiconductor substrate. The semiconductor substrate has a first cavity disposed through it, and conductive material covers at least the bottom portion of the first cavity. An integrated circuit is disposed on the top surface of the conductive material. The device further includes a cap disposed on the top surface of the substrate, such that a cavity disposed on a surface of the cap overlies the first cavity in the substrate. | 2013-01-17 |
| 20130015468 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAMEAANM KIKUCHI; MasaoAACI TokyoAACO JPAAGP KIKUCHI; Masao Tokyo JP - A semiconductor device of the present invention comprises a semiconductor element, a first metal body formed on a back surface of the semiconductor element, a first insulating layer formed on a back surface of the first metal body, a second metal body formed on a back surface of the first insulating layer, a third metal body formed on a front surface of the semiconductor element, a second insulating layer formed on a front surface of the third metal body and a fourth metal body formed on a front surface of the second insulating layer, and the second metal body is thinner than the first metal body and the fourth metal body is thicker than the third metal body. With this structure, it is possible to increase the heat radiation performance while suppressing stress to be exerted on the semiconductor element. | 2013-01-17 |
| 20130015469 | METHOD FOR MANUFACTURING DIODE, AND DIODE - A semiconductor substrate having a first side and a second side made of single crystal silicon carbide is prepared. A mask layer having a plurality of openings and made of silicon oxide is formed on the second side. The plurality of openings expose a plurality of regions included in the second side, respectively. A plurality of diamond portions are formed by epitaxial growth on the plurality of regions, respectively. The epitaxial growth is stopped before the plurality of diamond portions come into contact with each other. A Schottky electrode is formed on each of the plurality of diamond portions. An ohmic electrode is formed on the first side. | 2013-01-17 |
| 20130015470 | SEMICONDUCTOR LIGHT EMITTING ELEMENTAANM Tanaka; HidetoshiAACI Anan-shiAACO JPAAGP Tanaka; Hidetoshi Anan-shi JPAANM Takeda; MitsumasaAACI Anan-shiAACO JPAAGP Takeda; Mitsumasa Anan-shi JP - A semiconductor light emitting device in which adhesion between an insulating layer and a semiconductor layer is improved while maintaining the ability of the insulating layer to limit the direction of current flow. | 2013-01-17 |
| 20130015471 | ETCHANT FOR METAL LAYER INCLUDING COPPER OR A COPPER ALLOY, METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE SAME AND DISPLAY SUBSTRATEAANM PARK; Hong-SickAACI Suwon-siAACO KRAAGP PARK; Hong-Sick Suwon-si KRAANM Lee; Wang-WooAACI Suwon-siAACO KRAAGP Lee; Wang-Woo Suwon-si KR - An etchant includes about 50% by weight to about 70% by weight of phosphoric acid, about 1% by weight to about 5% by weight of nitric acid, about 10% by weight to about 20% by weight of acetic acid, about 0.1% by weight to about 2% by weight of a corrosion inhibition agent including an azole-based compound and a remainder of water. | 2013-01-17 |
| 20130015472 | METHOD FOR PACKAGING LIGHT EMITTING DIODES AND LIGHT EMITTING MODULE HAVING LED PACKAGES FORMED BY THE METHODAANM LO; HSING-FENAACI HukouAACO TWAAGP LO; HSING-FEN Hukou TW - A method for making a light emitting module includes: a. providing a flexible substrate; b. forming a plurality of rigid portions in the flexible substrate; c. forming an electrically conductive layer on the rigid portions, the electrically conductive layer having several electrodes apart from each other; d. arranging a plurality of LED dies on the electrically conductive layer with each LED die striding over and electrically connected to two neighboring electrodes; e. forming an encapsulating layer to cover the LED dies; and f. cutting through the flexible substrate. At least one of above steps b, c, d, e is performed by a roll applying process. | 2013-01-17 |
| 20130015473 | LIGHT-EMITTING DEVICEAANM CHEN; CHAO-HSINGAACI Hsinchu CityAACO TWAAGP CHEN; CHAO-HSING Hsinchu City TWAANM CHUNG; CHIEN-KAIAACI Hsinchu CityAACO TWAAGP CHUNG; CHIEN-KAI Hsinchu City TWAANM LIU; HSIN-MAOAACI Hsinchu CityAACO TWAAGP LIU; HSIN-MAO Hsinchu City TWAANM YAO; CHIU-LINAACI Hsinchu CityAACO TWAAGP YAO; CHIU-LIN Hsinchu City TWAANM HUANG; CHIEN-FUAACI Hsinchu CityAACO TWAAGP HUANG; CHIEN-FU Hsinchu City TW - The application provides a light-emitting device, comprising a substrate; a plurality of first light-emitting diode units on the substrate, wherein every first light-emitting diode unit has a first electrode structure; and a plurality of second light-emitting diode units among the plurality of first light-emitting diode units, wherein every second light-emitting diode unit has a second electrode structure. The second electrode structure of the second light-emitting diode unit is flipped over and electrically connected with the adjacent first electrode structure of the first light-emitting diode unit. | 2013-01-17 |
| 20130015474 | WHITE LIGHT EMITTING DIODE (LED) LIGHTING DEVICEAANM Zhang; MingAACI ChengduAACO CNAAGP Zhang; Ming Chengdu CNAANM Zhao; KunAACI ChengduAACO CNAAGP Zhao; Kun Chengdu CNAANM Li; Dong-mingAACI ChengduAACO CNAAGP Li; Dong-ming Chengdu CN - An alternating current (AC) white LED lighting device and a method for manufacturing the same are provided. The AC white LED lighting device consists of blue, violet or ultraviolet LED chips, blue afterglow luminescence materials A and yellow luminescence materials B. Wherein the weight ratio of the blue afterglow luminescence materials A to the yellow luminescence materials B is 10-70 wt %:30-90 wt %. Because of using afterglow luminescence materials, the light will be sustained when an excitation light source disappears, which can eliminate the influence of LED chips light output variation due to the AC fluctuation on the lighting device. And the problem of the heating of the chips also can be overcome. At the same time, the influence of temperature quenching effect and direction change of the AC current on the AC white LED lighting device is eliminated. | 2013-01-17 |
| 20130015475 | ORGANIC EL PANEL AND METHOD OF MANUFACTURING THE SAMEAANM Miyazawa; KazutoshiAACI OsakaAACO JPAAGP Miyazawa; Kazutoshi Osaka JP - The present invention prevents a local luminance reduction at defects in pixel electrodes with a rapid and easy method. The present invention provides a method of manufacturing an organic EL panel that includes a TFT panel and organic EL devices disposed over a surface of the TFT panel in matrix arrangement, each of the organic EL devices including a pixel electrode disposed over the surface of the TFT panel, an organic luminescent layer disposed over the pixel electrode, and a counter electrode disposed over the organic functional layer. The method includes the steps of: providing a TFT panel; patterning pixel electrodes on a surface of the TFT panel; detecting in the pixel electrodes defects in which the surface of the TFT panel is exposed; roughening a portion of the surface of the TFT panel by applying a laser beam onto the portion, the portion including a surface exposed through the defect in the pixel electrode; forming an organic functional layer over the pixel electrodes and the surface of the TFT panel exposed through the defect in the pixel electrode; and forming a counter electrode over the organic functional layer. | 2013-01-17 |
| 20130015476 | DISPLAY UNIT - A display unit that secures favorable display performance and has a simple structure is provided. The display unit includes a multilayer structure in which an organic light emitting device group respectively having a plurality of organic light emitting devices that emits cyan light and a plurality of organic light emitting devices that emits magenta light and a color filter group having a plurality of blue filters that transmit blue light and a plurality of yellow filters that transmit yellow light are sequentially layered. In the display unit, the cyan light and the magenta light entering from the organic light emitting device group to the color filter group is converted to blue light by the blue filter, and is respectively converted to green light and red light by the yellow filter. Therefore, compared to a case that the organic light emitting device group emits white light, color separation is more facilitated. | 2013-01-17 |
| 20130015477 | NANOSTRUCTURED LIGHT-EMITTING DEVICEAANM KIM; Joo-sungAACI Seongnam-siAACO KRAAGP KIM; Joo-sung Seongnam-si KRAANM KIM; TaekAACI Seongnam-siAACO KRAAGP KIM; Taek Seongnam-si KRAANM YANG; Moon-seungAACI Hwaseong-siAACO KRAAGP YANG; Moon-seung Hwaseong-si KR - A nanostructured light-emitting device including: a first type semiconductor layer; a plurality of nanostructures each including a first type semiconductor nano-core grown in a three-dimensional (3D) shape on the first type semiconductor layer, an active layer formed to surround a surface of the first type semiconductor nano-core, and a second type semiconductor layer formed to surround a surface of the active layer and including indium (In); and at least one flat structure layer including a flat-active layer and a flat-second type semiconductor layer that are sequentially formed on the first type semiconductor layer parallel to the first type semiconductor layer. | 2013-01-17 |
| 20130015478 | LIGHT EMITTING MODULE AND HEAD LAMP INCLUDING THE SAMEAANM Oh; Nam SeokAACI SeoulAACO KRAAGP Oh; Nam Seok Seoul KRAANM Cho; Yun MinAACI SeoulAACO KRAAGP Cho; Yun Min Seoul KRAANM Lee; Jong WooAACI SeoulAACO KRAAGP Lee; Jong Woo Seoul KR - Disclosed is a light emitting module including a light emitting device package having a circuit board having a cavity, an insulation substrate arranged in the cavity, with a conductive pattern formed thereon, and at least one light emitting device disposed on the insulation substrate, with being electrically connected with the conductive pattern; and a glass cover located on the light emitting device package, with lateral surfaces, a top surface and an open bottom surface, wherein the light emitting device package and the circuit board are electrically connected with each other. | 2013-01-17 |
| 20130015479 | LIGHT EMITTING DIODE PACKAGE AND METHOD OF MANUFACTURING THE SAMEAANM LIN; HSIN-CHIANGAACI HukouAACO TWAAGP LIN; HSIN-CHIANG Hukou TWAANM CHEN; PIN-CHUANAACI HukouAACO TWAAGP CHEN; PIN-CHUAN Hukou TW - An LED package includes a base, an LED chip, and an electrode layer. The base has thereon a first electrical connecting layer and a separated second electrical connecting layer. The LED chip is placed on the base and electrically connected with the first electrical connecting layer and the second electrical connecting layer by flip chip bonding. The electrode layer comprises a first electrode and a separated second electrode, and a receiving groove being defined between the first electrode and the second electrode. The base is received in the receiving groove of the electrode layer with the first electrical connecting layer being electrically connected to the first electrode, and the second electrical connecting layer being electrically connected to the second electrode. | 2013-01-17 |
| 20130015480 | SEMICONDUCTOR LIGHT EMMITING DEVICEAANM SUGAWARA; YasuharuAACI Kanagawa-kenAACO JPAAGP SUGAWARA; Yasuharu Kanagawa-ken JPAANM Kato; YukoAACI Kanagawa-kenAACO JPAAGP Kato; Yuko Kanagawa-ken JP - According to one embodiment, in a semiconductor light emitting device, a substrate has a first surface and a second surface to face to each other, and side surfaces each having a first region extending approximately vertically from the first surface toward the second surface side and a second region sloping broadly from the first region toward the second surface side. A semiconductor laminated body is provided on the first surface of the substrate and includes a first semiconductor layer of a first conductivity type, an active layer and a second semiconductor layer of a second conductivity type which are laminated in the order. A reflection film is provided on the second surface of the substrate. | 2013-01-17 |
| 20130015481 | SEMICONDUCTOR LIGHT EMITTING DEVICEAANM YOSHIMURA; KimitakaAACI Fukuoka-kenAACO JPAAGP YOSHIMURA; Kimitaka Fukuoka-ken JPAANM NISHITANI; KatsuhikoAACI Fukuoka-kenAACO JPAAGP NISHITANI; Katsuhiko Fukuoka-ken JPAANM FUJIWARA; AkihiroAACI Fukuoka-kenAACO JPAAGP FUJIWARA; Akihiro Fukuoka-ken JP - According to one embodiment, in a semiconductor light emitting device, a substrate includes a first surface, a second surface opposite to the first surface, lateral surfaces intersected with the first surface and the second surface, first regions each provided on the lateral surface, and second regions each provided on the lateral surface. Each of the first regions has a first width and a first roughness. Each of the second regions has a second width smaller than the first width and a second roughness smaller than the first roughness. The first regions and the second regions are alternately arranged. A proportion of the sum of the first widths to a distance between the first surface and the second surface is 0.5 or more. A semiconductor laminated body is provided above the first surface of the substrate, and includes a first semiconductor layer, an active layer and a second semiconductor layer. | 2013-01-17 |
| 20130015482 | POLARIZED WHITE LIGHT EMITTING DIODEAANM SU; Jung-ChiehAACI TaipeiAACO TWAAGP SU; Jung-Chieh Taipei TW - A polarized white light emitting diode provides a polarized white light to decrease glare, and increase the extinction ratio. A LED chip is disposed in a cavity between a reflection substrate and a metallic wire-grid polarizing layer, and emits a first color light. The metallic wire-grid polarizing layer is disposed under and in contact with a transparent substrate. A phosphor layer covers over the LED chip, and is disposed in the cavity with an air gap between the phosphor layer and the metallic wire-grid polarizing layer. A second color light is generated by the first color light. The metallic wire-grid polarizing layer multiply reflects a portion of first color light in plural directions in the cavity to produce secondary excitations. The polarized white light transmits through the metallic wire-grid polarizing layer by mixing a portion of first color light with the second color light excited by the first color light. | 2013-01-17 |
| 20130015483 | SEMICONDUCTOR LIGHT EMITTING DEVICEAANM SHIMOKAWA; KazuoAACI Kanagawa-kenAACO JPAAGP SHIMOKAWA; Kazuo Kanagawa-ken JPAANM HIGUCHI; KazuhitoAACI Kanagawa-kenAACO JPAAGP HIGUCHI; Kazuhito Kanagawa-ken JPAANM OBATA; SusumuAACI Kanagawa-kenAACO JPAAGP OBATA; Susumu Kanagawa-ken JP - According to one embodiment, a semiconductor light emitting device includes a stacked body, a first electrode, a second electrode, a reflective layer, a first metal pillar, a second metal pillar, and a sealing unit. The stacked body includes first and second semiconductor layers, and a light emitting unit. The light emitting unit is provided between the second portion and the second semiconductor layer. The first electrode is provided on the first semiconductor layer. The second electrode is provided on the second semiconductor layer. The reflective layer covers a side surface of the stacked body and insulative and reflective. The first metal pillar is electrically connected to the first electrode. The second metal pillar is electrically connected to the second electrode. The sealing unit seals the first and second metal pillars to leave end portions of the first and second metal pillars exposed. | 2013-01-17 |
| 20130015484 | LED LAMPS - A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution in the red to blue region that is close to that of daylight. Also, the chip pair can be used to provide an RGB lamp or a red-amber-green traffic lamp. The active regions of both chips can be less than 50 microns away from a heat sink. | 2013-01-17 |
| 20130015485 | LIGHT EMITTING DEVICE PACKAGE AND A LIGHTING UNIT - Provided are a light emitting device package and a lighting device. The light emitting device package includes a base having a via hole passing through a top surface thereof and a bottom surface thereof, a plurality of electrodes formed on the top surface of the base, the plurality of electrodes being electrically connected to a lower portion of the base through the via hole of the base, a frame disposed on the base, the frame having an opening and a light emitting device electrically connected to at least one of the plurality of electrodes in the opening of the frame. A width of the base is wider than a width of the frame, and material having light reflectivity is disposed on the frame. | 2013-01-17 |
| 20130015486 | ORGANIC LIGHT-EMITTING ELEMENTAANM Sekine; KoujirouAACI Ibaraki-shiAACO JPAAGP Sekine; Koujirou Ibaraki-shi JPAANM Yokoyama; MitsuruAACI Takatsuki-shiAACO JPAAGP Yokoyama; Mitsuru Takatsuki-shi JP - An organic light-emitting element including an organic light-emitting layer, a transparent substrate, and a transparent electrode disposed between the organic light-emitting layer and the transparent substrate; and which treats the surface of the transparent substrate on the opposite side from the transparent electrode as a light-extraction surface. The transparent substrate has birefringence, and has a refraction index of a P polarized light that is less than a refraction index of an S polarized light. A polarized light wherein an oscillation direction of an electric field is parallel to a laminated surface of the light-emitting layer is designated S polarized light, and a polarized light that includes a vector of the direction of the progression of the light and in which the oscillation direction of the electric field is included in a plane perpendicular to the laminated surface is designated P polarized light. | 2013-01-17 |
| 20130015487 | SEMICONDUCTOR LIGHT-EMITTING DEVICEAANM Okuno; KojiAACI Kiyosu-shiAACO JPAAGP Okuno; Koji Kiyosu-shi JP - To improve light extraction efficiency. | 2013-01-17 |
| 20130015488 | LIGHT EMITTING DIODE PACKAGE AND METHOD FOR FABRICATING THE SAMEAANM Yoon; Sun JinAACI Ansan-siAACO KRAAGP Yoon; Sun Jin Ansan-si KRAANM Oh; Kwang YongAACI Ansan-siAACO KRAAGP Oh; Kwang Yong Ansan-si KRAANM Bae; Yun JeongAACI Ansan-siAACO KRAAGP Bae; Yun Jeong Ansan-si KR - The present invention relates to a light emitting diode (LED), which enables a filler material for filling up a hole or opening of a substrate to prevent a resin of an encapsulant formed on the substrate from leaking and to enhance cohesion between the substrate and a resin portion formed in the hole or opening, and a method for fabricating the LED package. According to an embodiment of the present invention, there is provided an LED package, which comprises an LED chip; a substrate having the LED chip mounted thereon, the substrate having a hole or opening formed therein; an encapsulant formed on the substrate to encapsulate the LED chip; a resin portion for filling in the hole or opening; and a filler material for filling up a gap between the resin portion and the substrate. | 2013-01-17 |
| 20130015489 | Organic Light Emitting DiodeAANM SONG; Ki-WoogAACI Imsil-gunAACO KRAAGP SONG; Ki-Woog Imsil-gun KRAANM Pieh; SungHoonAACI SeoulAACO KRAAGP Pieh; SungHoon Seoul KR - An organic light emitting diode includes: a first electrode; a first hole transporting layer on the first electrode; a first emitting material layer on the first hole transporting layer, the first emitting material layer including a first host with a first dopant, wherein an energy level of a lowest unoccupied molecular orbital of the first dopant is higher than an energy level of a lowest unoccupied molecular orbital of the first host; a first electron transporting layer on the first emitting material layer; and a second electrode on the first electron transporting layer, wherein an energy level of each of the first hole transporting layer and the first electron transporting layer is higher than an energy level of a triplet state exciton of the first emitting material layer. | 2013-01-17 |
| 20130015490 | LED AND METHOD FOR MANUFACTURING THE SAMEAANM LIN; HSIN-CHIANGAACI HsinchuAACO TWAAGP LIN; HSIN-CHIANG Hsinchu TWAANM CHEN; PIN-CHUANAACI HsinchuAACO TWAAGP CHEN; PIN-CHUAN Hsinchu TW - An LED includes a base, a pair of leads fixed on the base, a housing fixed on the leads, a chip mounted on one lead and an encapsulant sealing the chip. The housing defines a cavity in a central area thereof and a chamber adjacent to a circumferential periphery thereof. Top faces of the leads are exposed in the chamber. A blocking wall is formed in the chamber to contact the exposed top faces of the leads. A bonding force between the blocking wall and the leads is larger than that between the leads and the housing. A method for manufacturing the LED is also disclosed. | 2013-01-17 |
| 20130015491 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAMEAANM Kim; Sang-YeolAACI Yongin-cityAACO KRAAGP Kim; Sang-Yeol Yongin-city KRAANM Park; Il-SeokAACI Yongin-cityAACO KRAAGP Park; Il-Seok Yongin-city KRAANM Han; KyulAACI Yongin-cityAACO KRAAGP Han; Kyul Yongin-city KR - An organic light-emitting apparatus includes a substrate; a first electrode formed on the substrate, where the first electrode is a cathode, an electron injection layer formed to contact an upper surface of the first electrode and including Mg, an intermediate layer formed on the electron injection layer and including an organic emission layer, and a second electrode which is formed on the intermediate layer and is an anode. | 2013-01-17 |
| 20130015492 | OPTO-ELECTRONIC AND ELECTRONIC DEVICES USING AN N-FACE OR M-PLANE GALLIUM NITRIDE SUBSTRATE PREPARED VIA AMMONOTHERMAL GROWTH - A method for growing III-V nitride films having an N-face or M-plane using an ammonothermal growth technique. The method comprises using an autoclave, heating the autoclave, and introducing ammonia into the autoclave to produce smooth N-face or M-plane Gallium Nitride films and bulk GaN. | 2013-01-17 |
| 20130015493 | SEMICONDUCTOR APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUSAANM SENOO; MasaruAACI Okazaki-shiAACO JPAAGP SENOO; Masaru Okazaki-shi JP - A semiconductor apparatus includes a substrate having a device region and a peripheral region located around the device region. A first semiconductor region is formed within the device region, is of a first conductivity type, and is exposed at an upper surface of the substrate. Second-fourth semiconductor regions are formed within the peripheral region. The second semiconductor region is of the first conductivity type, has a lower concentration of the first conductivity type of impurities, is exposed at the upper surface, and is consecutive with the first semiconductor region directly or indirectly. The third semiconductor region is of a second conductivity type, is in contact with the second semiconductor region from an underside, and is an epitaxial layer. The fourth semiconductor region is of the second conductivity type, has a lower concentration of the second conductivity type of impurities, and is in contact with the third semiconductor region from an underside. | 2013-01-17 |
| 20130015494 | Nanotube Semiconductor Devices and Nanotube Termination Structures - A termination structure for a semiconductor device includes an array of termination cells formed using a thin epitaxial layer (nanotube) formed on sidewalls of dielectric-filled trenches. In other embodiments, semiconductor devices are formed using a thin epitaxial layer (nanotube) formed on sidewalls of dielectric-filled trenches. | 2013-01-17 |
| 20130015495 | Stacked Half-Bridge Power Module - According to an exemplary embodiment, a stacked half-bridge power module includes a high side device having a high side power terminal coupled to a high side substrate and a low side device having a low side power terminal coupled to a low side substrate. The high side and low side devices are stacked on opposite sides of a common conductive interface. The common conductive interface electrically, mechanically, and thermally couples a high side output terminal of the high side device to a low side output terminal of the low side device. The high side device and the low side device can each include an insulated-gate bipolar transistor (IGBT) in parallel with a diode. | 2013-01-17 |
| 20130015496 | Power Semiconductor DeviceAANM Konno; AkitoyoAACI HitachiAACO JPAAGP Konno; Akitoyo Hitachi JPAANM Azuma; KatsunoriAACI HitachiAACO JPAAGP Azuma; Katsunori Hitachi JPAANM Ando; TakashiAACI HitachiAACO JPAAGP Ando; Takashi Hitachi JP - A power semiconductor device is provided in which reliability can be improved when the parallel number of semiconductor devices increases. When a bonding face on collector electrode is on an upper side, and a bonding face on emitter electrode is on a lower side, a collector electrode joint region as a joint region between a collector trace and a collector electrode on a chip mounted substrate and an emitter electrode joint region as a joint region between an emitter trace and an emitter electrode are located at a same position in an up-and-down direction and are adjacent in a right-and-left direction at an interval of 2 mm or more and 4 mm or less. | 2013-01-17 |
| 20130015497 | SOURCE/DRAIN REGION, CONTACT HOLE AND METHOD FOR FORMING THE SAMEAANM Yin; HaizhouAACI PoughkeepsieAAST NYAACO USAAGP Yin; Haizhou Poughkeepsie NY USAANM Zhu; HuilongAACI PoughkeepsieAAST NYAACO USAAGP Zhu; Huilong Poughkeepsie NY USAANM Luo; ZhijiongAACI PoughkeepsieAAST NYAACO USAAGP Luo; Zhijiong Poughkeepsie NY US - An S/D region including a first region and a second region is provided. The first region is located, with at least a partial thickness, in the substrate. The second region is formed on the first region and made of a material different from that of the first region. A method for forming an S/D region is further provided, and the method includes: forming trenches at both sides of a gate stack structure in a substrate; forming a first semiconductor layer, wherein at least a part of the first semiconductor layer is filled into the trenches; and forming a second semiconductor layer on the first semiconductor layer, wherein the second semiconductor layer is made of a material different from that of the first semiconductor layer. A contact hole and a forming method thereof are also provided which may increase the contact area between a contact hole and a contact region, and reduce the contact resistance. | 2013-01-17 |
| 20130015498 | Composite Semiconductor Device with Integrated Diode - There are disclosed herein various implementations of composite semiconductor devices. In one implementation, such a composite semiconductor device includes a transition body formed over a diode, the transition body including more than one semiconductor layer. The composite semiconductor device also includes a transistor formed over the transition body. The diode may be connected across the transistor using through-semiconductor vias, external electrical connectors, or a combination of the two. | 2013-01-17 |
| 20130015499 | Composite Semiconductor Device with a SOI Substrate Having an Integrated Diode - There are disclosed herein various implementations of composite semiconductor devices. In one implementation, such a composite semiconductor device includes a semiconductor on insulator (SOI) substrate including a diode and an insulator layer. The composite semiconductor device also includes a transition body formed over the diode, and a transistor formed over the transition body. The diode is connected across the transistor using through-semiconductor vias, external electrical connectors, or a combination of the two. | 2013-01-17 |
| 20130015500 | SEMICONDUCTOR DEVICEAANM IZUMIDA; TakashiAACI KanagawaAACO JPAAGP IZUMIDA; Takashi Kanagawa JPAANM MIYATA; ToshitakaAACI KanagawaAACO JPAAGP MIYATA; Toshitaka Kanagawa JP - According to one embodiment, a semiconductor device includes a semiconductor protrusion formed on a semiconductor substrate, a source/drain layer provided in a vertical direction of the semiconductor protrusion, a gate electrode provided on a side surface of the semiconductor protrusion through a gate insulating film, and a channel region provided on the side surface of the semiconductor protrusion. The potential height in the channel region is different between the drain layer side and the source layer side. | 2013-01-17 |
| 20130015501 | Nested Composite Diode - There are disclosed herein various implementations of nested composite diodes. In one implementation, a nested composite diode includes a primary transistor coupled to a composite diode. The composite diode includes a low voltage (LV) diode cascoded with an intermediate transistor having a breakdown voltage greater than the LV diode and less than the primary transistor. In one implementation, the primary transistor may be a group III-V transistor and the LV diode may be an LV group IV diode. | 2013-01-17 |
| 20130015502 | STRUCTURE AND METHOD FOR FORMING A LIGHT DETECTING DIODE AND A LIGHT EMITTING DIODE ON A SILICON-ON-INSULATOR WAFER BACKSIDEAANM Fox; Benjamin A.AACI RochesterAAST MNAACO USAAGP Fox; Benjamin A. Rochester MN USAANM Gibbs; Nathaniel J.AACI Iowa CityAAST IAAACO USAAGP Gibbs; Nathaniel J. Iowa City IA USAANM Maki; Andrew B.AACI RochesterAAST MNAACO USAAGP Maki; Andrew B. Rochester MN USAANM Onsongo; David M.AACI AustinAAST TXAACO USAAGP Onsongo; David M. Austin TX USAANM Timpane; Trevor J.AACI RochesterAAST MNAACO USAAGP Timpane; Trevor J. Rochester MN US - A structure and method for fabricating a light emitting diode and a light detecting diode on a silicon-on-insulator (SOI) wafer is provided. Specifically, the structure and method involves forming a light emitting diode and light detecting diode on the SOI wafer's backside and utilizing a deep trench formed in the wafer as an alignment marker. The alignment marker can be detected by x-ray diffraction, reflectivity, or diffraction grating techniques. Moreover, the alignment marker can be utilized to pattern openings and perform ion implantation to create p-n junctions for the light emitting diode and light detecting diode. By utilizing the SOI wafer's backside, the structure and method increases the number of light emitting diodes and light detecting diodes that can be formed on a SOI wafer, enables an increase in overall device density for an integrated circuit, and reduces attenuation of light signals being emitted and detected by the diodes. | 2013-01-17 |
| 20130015503 | MONOLITHIC INTEGRATED SEMICONDUCTOR STRUCTURE - A monolithic integrated semiconductor structure includes: A) an Si carrier layer, B) a layer having the composition B | 2013-01-17 |
| 20130015504 | TSV STRUCTURE AND METHOD FOR FORMING THE SAMEAANM Kuo; Chien-LiAACI Hsinchu CityAACO TWAAGP Kuo; Chien-Li Hsinchu City TWAANM Yang; Chin-ShengAACI Hsinchu CityAACO TWAAGP Yang; Chin-Sheng Hsinchu City TWAANM Lin; Ming-TseAACI Hsinchu CityAACO TWAAGP Lin; Ming-Tse Hsinchu City TW - A TSV structure includes a wafer including a first side and a second side, a through via connecting the first side and the second side, a through via dielectric layer covering the inner wall of the through via, a conductive layer which fills up the through via and consists of a single material to be a seamless TSV structure, a first dielectric layer covering the first side and surrounding the conductive layer as well as a second dielectric layer covering the second side and part of the through via dielectric layer but partially covered by the conductive layer. | 2013-01-17 |
