03rd week of 2009 patent applcation highlights part 13 |
Patent application number | Title | Published |
20090014641 | Mass Spectrometer - A closed-loop ion guide ( | 2009-01-15 |
20090014642 | DATA ACQUISITION SYSTEM FOR A SPECTROMETER USING HORIZONTAL ACCUMULATION - A data acquisition system and method are described that may be used with various spectrometers. The data acquisition system may include an ion detector, an initial processing module, and a spectra processing module. The initial processing module is provided for receiving, sampling, and processing ion detection signals received from the ion detector, and for supplying processed signals to the spectra processing module. The initial processing module includes a horizontal accumulation circuit that combines a fractional number of adjacent samples of the ion detection signals into bins. The number of adjacent samples to combine into bins may vary as a function of: (1) the time of arrival at the ion detector corresponding to that sample; (2) the mass corresponding to that sample; (3) the resolution corresponding to that sample; and/or (4) an operational mode of the spectrometer. The spectra processing module receives the processed signals and generates spectra. | 2009-01-15 |
20090014643 | Data Acquisition System for a Spectrometer that Generates Stick Spectra - A data acquisition system and method are described that may be used with various spectrometers. The data acquisition system may include an ion detector and a processing circuit. The processing circuit may include an initial processing module and a spectra processing module. According to one embodiment, the spectra processing module generates stick spectra and supplies the stick spectra to an external processor. The stick spectra comprise a peak intensity, resolution, and a location in the spectra for each detected peak. The stick spectra may be generated in real time. | 2009-01-15 |
20090014644 | IN-SITU ION SOURCE CLEANING FOR PARTIAL PRESSURE ANALYZERS USED IN PROCESS MONITORING - An ion source apparatus for partial pressure analyzers and in-situ cleaning method thereof based on inducing a hollow cathode discharge (HCD) inside the ion source. The HCD is formed by applying a high negative voltage to one or more parts of the ion source, including the anode electrode, the lens focus plate and at least one other lens or other form of plate, such as a total pressure collector plate. | 2009-01-15 |
20090014645 | CONFINING IONS WITH FAST-OSCILLATING ELECTRIC FIELDS - The applicants' teachings provide methods, systems, and apparatus useful in operating mass spectrometers and other devices incorporating multipole rod sets or other multi-electrode devices to simultaneously contain ions of both positive and negative charges through the simultaneous application to the rods or other electrodes of both radio-frequency (RF) and alternating (AC) currents. | 2009-01-15 |
20090014646 | Method and apparatus for incorporating electrostatic concentrators and/or ion mobility separators with Raman, IR, UV, XRF, LIF and LIBS spectroscopy and /or other spectroscopic techniques - The present invention provides a novel approach for reliably and accurately detecting and identifying airborne particles. This is done by providing a novel system which incorporates electrostatic concentrators and/or ion mobility separators with Raman, IR, UV, XRF, LIF and LIBS spectroscopy and/or other spectroscopic techniques. | 2009-01-15 |
20090014647 | Correction of Time of Flight Separation in Hybrid Mass Spectrometers - The present invention pertains to a method and apparatus which increases the efficiency with which ions are transported from a first ion trap to a second ion trap, and subsequently trapped in the second ion trap. In one aspect the invention, increased efficiency takes the form or enabling ions of both high and low mass to charge ratios to be trapped in the second ion trap at substantially the same time, or at least within a relatively small window of time. This can be achieved by minimizing the undesirable time-of-flight separation by the high and low mass to charge ratio ions as they are transported from a first ion trap to the second ion trap. This minimization can be realized by adjusting the potential energy applied to ion transfer optics disposed between the two ion traps. | 2009-01-15 |
20090014648 | Particle beam device and method for use in a particle beam device - A particle beam device includes a movable carrier element with at least one receiving element for receiving a specimen and in which the receiving element is situated on the carrier element. In various embodiments, the receiving element may be situated removably on the carrier element and/or multiple receiving elements may be situated on the carrier element in such a way that a movement of the carrier element causes a movement of the multiple receiving elements in the same spatial direction or around the same axis. The carrier element may be movable in three spatial directions situated perpendicular to one another and rotatable around a first axis which is parallel to an optical axis of the particle beam device and around a second axis which is situated perpendicular to the optical axis. A method for using the particle beam device in connection with specimen study and preparation is also disclosed. | 2009-01-15 |
20090014649 | ELECTRON BEAM APPARATUS - Secondary electrons emitted from a sample (W) by an electron beam irradiation is deflected by a beam separator ( | 2009-01-15 |
20090014650 | DETECTOR FOR ELECTRON COLUMN AND METHOD FOR DETECTING ELECTRONS FOR ELECTRON COLUMN - In a conventional micro-channel plate (MCP), a secondary electron (SE) detector or a semi-conductor detector the number of the electrons is amplified through its own structure. For such amplification a small voltage difference is applied externally or generated due to its own structure and material. The electric current of electrons undergoing the above-described procedure is amplified by an external amplification circuit. In the present invention electrons—resulting from the collision of the electron beam generated by a microcolumn—are detected by surrounding conductive wiring. The detected electrons are amplified using an amplification circuit on the outside similar to a conventional detection method. | 2009-01-15 |
20090014651 | CHARGED PARTICLE BEAM EQUIPMENTS, AND CHARGED PARTICLE BEAM MICROSCOPE - In an electron microscope to which a phase retrieval method is applied, an image size determined by a pixel size p of a diffraction pattern, a camera length L, and a wavelength λ of an illumination beam is allowed to have a certain relation with an illumination area on a specimen. Further, a beam illumination area or a scanning area of a deflector when a magnified image is observed is set by an illumination adjustment system, so that an image size when the magnified image is used for the phase retrieval method is allowed to have a certain relation with the image size determined by the pixel size of the diffraction pattern, the camera length, and the wavelength of the illumination beam. Accordingly, the information of the diffraction pattern is substantially equal to an object image to be reconstructed. | 2009-01-15 |
20090014652 | ELECTRONIC SENSOR WITH INTEGRATED THERMAL REGULATION - A thermal image sensor comprising at least: | 2009-01-15 |
20090014653 | BOLOMETER ARRAY COMPENSATION - A bolometer circuit has a substrate, bolometer detectors coupled to the substrate, a source of calibration data and a compensation circuit. Each bolometer detector has an associated calibration data. The compensation circuit is configured to generate a time varying compensation signal for each bolometer detector based on its associated calibration data. | 2009-01-15 |
20090014654 | PASSIVE INFRA-RED DETECTORS - A passive infra-red detector including at least three sub-detectors, each sub-detector being operative to receive infra-red radiation from a corresponding one of at least three sub fields-of-view, each sub field-of-view being exclusively defined by an optical element which does not define any other sub field of view, the sub fields-of-view being angled with respect to each other, adjacent ones of the sub fields-of-view being separated by a gap of no more than 30 degrees and at least one of the sub fields-of-view having at least one of the following characteristics: extending over no more then 45 degrees in azimuth; and including not more than three azimuthally distributed detection zones, and signal processing circuitry, operative to receive output signals from the sub detectors and to provide a motion detection output. | 2009-01-15 |
20090014655 | Coupling and Method for a Transition-Edge Bolometer - The invention relates to a circuit for transition-edge bolometers, which comprises a resistor element ( | 2009-01-15 |
20090014656 | Wavelength-conversion system with a heated or cooled wavelength-conversion target - A wavelength-conversion system includes a wavelength-conversion target that radiates an energy output when an energy input of a different wavelength is incident upon the wavelength-conversion target. An input structure directs the energy input of the input-energy wavelength to be incident upon the wavelength-conversion target. A target baseline temperature modifier either controllably heats or controllably cools the wavelength-conversion target independently of any heating or cooling effect of the energy input or the energy output. A detector is positioned so that the energy output of the output-energy wavelength emitted from the wavelength-conversion target is incident upon the detector. | 2009-01-15 |
20090014657 | INFRARED FIRE DETECTION SYSTEM - An infrared detection system that may note changes of temperature over time in various fields of view of a scene. The system may use an array of long wave infrared detectors to sense early or late stages of a fire. The system may check numerous fields of view. It may have a fixture with a lens for each field of view. Each lens may have its respective field of view focused on the array. All but one lens may be shuttered or closed from detecting its respective field of view at a time. The system may have a processor with a memory to record the temperatures from the array over time. Variation of temperature in one spot or another of a field of view may be an indication of an imminent fire or another situation of concern. | 2009-01-15 |
20090014658 | Solid-state photodetector pixel and photodetecting method - A pixel is formed in a semiconductor substrate (S) with a plane surface for use in a photodetector. It comprises an active region for converting incident light (In) into charge carriers, photogates (PGL, PGM, PGR) for generating a lateral electric potential (Φ(x)) across the active region, and an integration gate (IG) for storing charge carriers generated in the active region and a dump site (Ddiff). The pixel further comprises separation-enhancing means (SL) for additionally enhancing charge separation in the active region and charge transport from the active region to the integration gate (IG). The separation-enhancing means (SL) are for instance a shield layer designed such that for a given lateral electric potential (Φ(x)), the incident light (In) does not impinge on the section from which the charge carriers would not be transported to the integration gate (IG). | 2009-01-15 |
20090014659 | DIGITAL X-RAY DETECTORS - An x-ray detector is provided for use in imaging systems. The x-ray detector includes a detector subsystem configured to output electrical signals in response to reception of x-rays. The detector subsystem includes an imaging panel, a support layer and a low density core disposed between the imaging panel and the support layer. | 2009-01-15 |
20090014660 | COUNT UNIFORMITY CORRECTION IN FLUX SPACE FOR PIXILATED SEMICONDUCTING RADIATION DETECTORS - In operation of a photon counting detecting system ( | 2009-01-15 |
20090014661 | RADIATION IMAGING APPARATUS - A single flat panel detector provides radiation images which can correspond with various radiographic modes. In a radiation imaging apparatus including a flat panel detector which derives a radiation image according to incident radiation, a holding unit which holds the flat panel detector and a connecting mechanism capable of performing an connecting and a disconnecting between the holding unit and the flat panel detector, the flat panel detector can be controlled so that the maximum number of images of radiation images that the flat panel detector can derive when the flat panel detector is disengaged from the holding unit is smaller than the maximum number of images of radiation images that the flat panel detector can derive when the flat panel detector is held by the holding unit. | 2009-01-15 |
20090014662 | Directional Neutron Detector - A directional neutron detector consisting of very thin plastic scintillation fibers and optically coupled to a photo-sensor array, where the directionality of Neutrons is estimated from the sequence of fibers traversed by the scattered protons and energy deposited in each one of them . Several fabrication methods of the large thin fiber arrays are described. | 2009-01-15 |
20090014663 | CHARGED-PARTICLE BEAM WRITING METHOD - The present invention provides an electron beam writing method capable of suppressing a variation in position to be irradiated with an electron beam due to its drift and writing a predetermined pattern. | 2009-01-15 |
20090014664 | Specimen Holder for Electron Microscope - The present invention provides a specimen holder for use with an electron microscope. The specimen holder has a retainer mounted at the front end of the body of the specimen holder. The retainer has a plate member provided with a hole around its front end. The hole provides a reference in securing the whole specimen for a desired field of view. A circular groove is formed in the plate member and used to place the specimen in position. Any members lying perpendicularly to the tilted axis at the position of the specimen are cut out. | 2009-01-15 |
20090014665 | Fibre Optic Dosimeter - A dosimeter ( | 2009-01-15 |
20090014666 | OPTICAL SYSTEM HAVING A CLEARNING ARRANGEMENT - A cleaning arrangement for an optical system and in particular for an optical system designed for EUV radiation. The cleaning arrangement has a gas inlet ( | 2009-01-15 |
20090014667 | EXTERNAL CATHODE ION SOURCE - An ion source is disclosed for use in fabrication of semiconductors. The ion source includes an electron emitter that includes a cathode mounted external to the ionization chamber for use in fabrication of semiconductors. In accordance with an important aspect of the invention, the electron emitter is employed without a corresponding anode or electron optics. As such, the distance between the cathode and the ionization chamber can be shortened to enable the ion source to be operated in an arc discharge mode or generate a plasma. Alternatively, the ion source can be operated in a dual mode with a single electron emitter by selectively varying the distance between the cathode and the ionization chamber. | 2009-01-15 |
20090014668 | Laser produced plasma EUV light source having a droplet stream produced using a modulated disturbance wave - A plasma generating system is disclosed having a source of target material droplets, e.g. tin droplets, and a laser, e.g. a pulsed CO | 2009-01-15 |
20090014669 | Semiconductor relay - The semiconductor relay comprises: an insulated type DC/DC power supply | 2009-01-15 |
20090014670 | OPTICAL CAVITY SYSTEM HAVING AN ORTHOGONAL INPUT - An optical system having a closed loop light path with a source for providing light in a direction parallel to the normal of an input to the light path. The light may be provided via a diffracting mechanism to the input. The system may be a cavity ring-down sensor or some other optical device. The light path may be formed in a laser gyroscope type cavity. A light source may have a beam aligned to a spot, indicator or mark near the input of the cavity. The location of the spot, indicator or mark may be determined in accordance with parameters of the diffracting mechanism and/or cavity. A fixture for holding the light source may be secured so that placement of the source in the fixture will automatically result in an aligned light source. Then the diffracting mechanism may be inserted to further complete fabrication of the optical system. | 2009-01-15 |
20090014671 | Cryogenic Solenoid Valve - Solenoid valve including a seat body connected via an elongate tube to a valve head supporting the electromagnetic actuator, wherein said valve head is sealingly mounted in a wall of an evacuated valve box insulating the tube and the seat body from the outside. The invention is useful in particular in controlling a flow of cryogenic fuel, specifically liquid hydrogen, in a motor vehicle. | 2009-01-15 |
20090014672 | Method and device for controlling a hydraulic actuator - A method, device, and control unit for controlling an actuator in open loop, particularly for a valve, preferably for a gas-exchange valve of an internal combustion engine, having at least one control valve for opening the valve and one control valve for closing the valve, each of the control valves being capable of being driven by at least one drive pulse whose duration determines a position on the positioning travel of the valve. The valve is opened/closed in one lift and/or a plurality of partial lifts and at least one drive pulse is assigned to each lift and/or each partial lift, and the valve is assigned at least one transducer which generates a signal that discloses values of a discrete positioning travel of the valve and of an assigned time and/or of a discrete instant and of an assigned positioning travel. The method for controlling the actuator includes: | 2009-01-15 |
20090014673 | IDLE AIR CONTROL VALVE - An idle air control valve includes a sleeve that defines an internal space and an electrical connector including terminals attached to the sleeve. The connector is joined to the sleeve to enclose the actuator. | 2009-01-15 |
20090014674 | Valve regulation assembly - The present invention is directed to a bypass valve assembly having a valve housing with an inlet port, outlet port, and bypass port all formed within the valve housing. A valve member is operably connected to the valve housing and includes a first valve plate and second valve plate that face in substantially opposite directions from each other. The first valve plate articulates to form a tight barrier with the outlet port when the valve member is in a first position, and the second valve plate articulates to form a tight barrier with the bypass port when the valve member is in a second position. | 2009-01-15 |
20090014675 | RESILIENT SEATED BUTTERFLY VALVE WITH INTERCHANGEABLE OFF-CENTER AND ON-CENTER DISCS - The resilient seated butterfly valve has a common spherical center for receiving either an on-center or off-center disc, both of which are rotatably mounted in the body. A seal has a seat spherical surface. The seal is affixed to the circumference of the valve chamber. It has an on-center seal region for engagement with the on-center spherical sealing edge of the on-center disc. The seal has an off-center seal region for engagement with the off-center spherical sealing edge of the off-center disc. The seal may include an outlet flange, an outlet ramp, an inlet ramp, and an inlet flange. The front face of the seal for the off-center disc extends beyond the position of the front face of the seal for the on-center disc. | 2009-01-15 |
20090014676 | Shut-off fitting - A shut-off instrument for a flow medium, in particular a slide valve instrument designed for pressurization on both sides with an instrument housing forming a flow channel and a slide valve chamber and with a soft-sealing shut-off element closing off the flow channel and with a slide valve stem which penetrates a seal arrangement and/or bearing arrangement in a housing neck extension delimiting the slide valve chamber and which is rotationally connected to a stem nut coupled to the shut-off element by a screw contact. The shut-off element is designed to include more than one part and at least one external dimension of the main body is slightly smaller than a nominal width of the flow channel and seal elements are arranged on opposite support surfaces of the main body via an engaged connection projecting over the external dimension with a peripheral edge collar. | 2009-01-15 |
20090014677 | FUEL INJECTION VALVE - A fuel injection valve is provided with a main body and a valve member. The main body has a fuel passage and a fuel injection opening formed at the downstream-end of the fuel passage. The valve member is provided in the fuel passage. The valve member is configured to move between a first position in which the valve member closes the fuel injection opening and a second position in which the valve member opens the fuel injection opening. The fuel injection valve is further provided with a compression spring disposed in the fuel passage and a spring pin. The compression spring restrains the valve member toward the first position. The spring pin is pressedly inserted into the fuel passage for keeping the compression spring in the fuel passage. A surface of the spring pin has a resistance against sulfur. | 2009-01-15 |
20090014678 | Elastomeric Sealing Element for Gas Compressor Valve - This invention relates to the use of elastomers with the sealing element of reciprocating gas compressor valves to increase the reliability of the gas tight seal within the reciprocating gas compressor valve and to increase the useful life of reciprocating gas compressor valve. The elastomeric material is either used as a coating layer on the sealing element of the reciprocating gas compressor valve, or as the entire sealing element. The elastomeric material acts as a cushion to reduce the wear on the sealing element, provides a superior gas tight seal, and is more tolerant of entrained dirt or liquids in the gas stream thereby increasing the operable life of the reciprocating gas compressor valve. Reducing the mean time between reciprocating gas compressor valve failures results in longer reciprocating gas compressor run times for the user, increased revenue generation for the user and safer operation of said equipment. | 2009-01-15 |
20090014679 | Plastic aerosol valve and method of assembly, mounting and retention - A plastic aerosol valve with a plastic valve stem, plastic housing, plastic mounting cup, and plastic locking ring. The plastic valve is assembled into the mounting cup. The plastic housing is assembled into the plastic mounting cup by snap fittings. The plastic mounting cup has a peripheral portion that snap fits up into the plastic locking ring. The plastic locking ring has frangibly-connected upper and lower portions. The lower portion snap fits with the top of a plastic product bottle to mount the aerosol valve assembly on the bottle. The upper ring portion thereafter is telescoped downwardly over the lower ring portion to lock and retain the aerosol valve assembly on the pressurized bottle. The plastic mounting cup can be molded separately, or integrally with the plastic locking ring. A check valve may be contained in the valve stem. | 2009-01-15 |
20090014680 | Cementitious mixtures - A cementitious mixture includes a light weight material, cement, resin, sand, fibrous material, and water. In one form, the constituent components are selected to provide a settable liquid or mobile solid which, when set to form a solid, achieves a predetermined selection of parameters comprising two or more parameters selected from available parameters, said available parameters including density, compressive strength, sound insulation, thermal insulation and fire rating of the solid. In another form, the relative concentrations of the constituent components are adjusted according to a predetermined formulation to provide a settable liquid or mobile solid such that, when set into a solid, the solid possesses a predetermined selection of parameters comprising two or more parameters selected from available parameters, said available parameters including density, compressive strength, sound insulation, thermal insulation and fire rating of the solid. | 2009-01-15 |
20090014681 | Magnetorheological fluid with a fluorocarbon thickener - A magnetorheological fluid formulation comprising magnetizable particles dispersed in carrier fluid and a thixotropic agent wherein the thixotropic agent comprises a fluorocarbon grease. | 2009-01-15 |
20090014682 | Carrier Polymer Particle, Process for Producing the Same, Magnetic Particle for Specific Trapping, and Process for Producing the Same - Carrier polymer particles comprising organic polymer particles having a particle diameter of 0.1 to 20 micrometers and a saccharide with which the surface of the organic polymer particles is covered, the organic polymer particles and the saccharide being chemically bonded. | 2009-01-15 |
20090014683 | SELECTIVE POLISH FOR FABRICATING ELECTRONIC DEVICES - A selective polish for fabricating electronic devices is disclosed. The selective polish may include the use of a slurry that facilitates the selective polish of a first component but does not substantially polish a second component. | 2009-01-15 |
20090014684 | LONG AFTERGLOW LUMINESCENT MATERIAL WITH COMPOUNDED SUBSTRATES AND ITS PREPARATION METHOD - The present invention provides a new ultra-long after-glow phosphorescent material and manufacturing method for the same. The said materials include a phosphor including aMS.bM | 2009-01-15 |
20090014685 | LUMINESCENT MATERIAL USING (Y, GD)-CONTAINING NANOPARTICLE AND SURFACE BOUND ORGANTIC LIGANDS - The invention relates to a luminescent material for an light emitting device comprising an (YGd)-containing nanoparticle material linked to at least one organic ligand molecule | 2009-01-15 |
20090014686 | Novel branched alpha-cyanostilbene fluorophores - A branched α-cyanostilbene fluorescent materials with a new structure useful to the organic electroluminescence display (OELD), which includes the organic substance in the state of powder, liquid and film with the stilbene core structure and the terminal branched phenyl structure. | 2009-01-15 |
20090014687 | LUMINESCENT, TRANSPARENT COMPOSITE MATERIALS - The invention relates to a transparent, luminescent plastic glass containing luminescent particles and to a method for producing the same. The glass hardly differs or differs only slightly in terms of transparency from pure plastic glass. In addition, said glass is easy to produce. | 2009-01-15 |
20090014688 | Semiconductor Nanoparticles and Manufacturing Method of The Same - A process for the production of semiconductor nanoparticles which realizes both uniform crystallite size and high crystallinity with the agglomeration thereof inhibited. This process is characterized by comprising the step (a) of generating nano-size particles from a semiconductor raw material and dispersing the particles in a gas phase, the step (b) of heat-treating the particles while keeping the particles in a state dispersed in the gas phase, and the step (c) of collecting the heat-treated particles immediately after the heat treatment with a solution of a surface modifier for modifying the surfaces of the particles. | 2009-01-15 |
20090014689 | METHODS AND APPARATUS FOR PRODUCING SYNGAS AND ALCOHOLS - This invention features methods and apparatus for producing syngas from any carbon-containing feed material. In some embodiments, a substoichiometric amount of oxygen is used to enhance the formation of syngas. In various embodiments, both oxygen and steam are added during the conversion of the feed material into syngas. Some variations employ eductors for facilitating flow of solid and gas phases in the processes of the invention. The syngas can be converted to alcohols, such as ethanol, or to other products. | 2009-01-15 |
20090014690 | Conjugated polymers, their preparation and use thereof - The present invention relates to conjugated polymers which comprise both structural units of the formula (1) and also structural units of the formula (2). The materials according to the invention are more readily soluble, display improved air stability and display a smaller voltage increase during prolonged operation when used in a polymeric organic light-emitting diode (PLED) than polymers according to the prior art. | 2009-01-15 |
20090014691 | Dispersions, films, coatings and compositions - A method of providing location dependent content to an end station using a base station. The base station receives from an end station and via a communications network, a content request, and an identifier indicative of an identity of the end station. The base station then authenticates the user or the end station using the identifier. In response to a successful authentication, the base station determines the location of the end station and determines content using the location or the content request, which is then transferred to the end station. | 2009-01-15 |
20090014692 | THERMOPLASTIC POLY(ARYLENE ETHER) / POLYESTER BLENDS AND ARTICLES THEREOF - Disclosed herein is a polymer composition comprising: a poly(arylene ether); a polyester; electrically conductive filler, and an impact modifier. The composition has a continuous phase comprising polyester and a disperse phase comprising poly(arylene ether). The amount of the disperse phase is less than 35 weight percent, based on the total weight of the composition. | 2009-01-15 |
20090014693 | Selenium Containing Electrically Conductive Polymers and Method of Making Electrically Conductive Polymers - Monomeric, oligomeric and polymeric electrically conductive compounds and methods of making the compounds having a repeating unit having formula P1, as follows: | 2009-01-15 |
20090014694 | METHOD FOR PRODUCING NICKEL PARTICLE, NICKEL PARTICLE OBTAINED BY THE PRODUCTION METHOD, AND ELECTROCONDUCTIVE PASTE USING THE NICKEL PARTICLE - The present invention is directed at providing fine nickel particles with a sharp particle size distribution, and providing an electroconductive paste using the nickel particles. In order to obtain the nickel particles capable of achieving the purpose, a method for producing the nickel particle by elevating a temperature of the reactive solution containing a nickel salt and a polyol to a reduction temperature, and reducing the nickel salt in the reactive solution which is characterized in that the reactive solution is prepared to contain a carboxylic acid or an amine having a carboxyl functional group and/or an amino functional group, and a precious metal catalyst before the solution temperature is elevated to the reduction temperature. Nickel particles obtained with the production method have an average image analytical particle diameter of 1 nm to 300 nm. | 2009-01-15 |
20090014695 | Mineral Dispersants and Methods for Preparing Mineral Slurries Using the Same - A mineral slurry comprises mineral particles in an amount equal to or greater than about 60 percent by total weight of the slurry, wherein 85 percent of the mineral particles have an average particle size equal to or less than 2 micrometers; a polyelectrolyte dispersant derived from an acrylate polymer formed by reversible addition-fragmentation chain transfer polymerization, wherein the polyelectrolyte dispersant comprises endgroups comprising thio-containing residues derived from a trithiocarbonate chain transfer agent, wherein the polyelectrolyte dispersant is in an amount less than about 35 pounds of the dispersant per ton of dry mineral particles, and wherein the polyelectrolyte dispersant has a molecular weight of 3000 to 10,000 Daltons and a polydispersity of at least 1.0 and less than 1.5; and the remainder water. | 2009-01-15 |
20090014696 | LIFTING DEVICE - A lifting device for positioning an item on a location includes a support which in use applies a lifting force to lift the item, and securing means for securing the item to the support. | 2009-01-15 |
20090014697 | ALIGNMENT AND LOCATING TOOL - A tool has a cylinder with a pair of magnets, diametrically spaced apart upon the sides of the cylinder and of opposite polarity. In cooperation with a compass, the magnets identify the tool thus indicating its location when concealed prior to pulling wire through a house or other structure. The tool also spaces a bit extension tool away from interior faces of adjacent drywall panels. A setscrew secures the cylinder upon the shank of a bit extension for rotation of the tool. The magnets are integrated into the cylinder of the tool to survive ordinary handling, drilling through wooden structures, and rotation. The tool emanates a magnetic field from within a concealed location that deflects a compass for revealing the location of the tool. | 2009-01-15 |
20090014698 | E Z STRETCH - A fence pulling system for pulling a fence includes a male member, a female member to connect to the male member, a pivot member to allow the male member to pivot with respect to the female member, and a clamp member to allow the fence to clamped. The pivot member may include an aperture member, and the pivot member may include a L-shaped member. The male member may include the aperture member, and the female member may include the L-shaped member. The clamping member may include a male clamping member, and the clamping member may include a first female clamping member and a second female clamping member. The frame member may include a longitudinal frame member, and the frame member may include a traverse frame member. | 2009-01-15 |
20090014699 | CABLE GUIDE - A guide adapted to retain a flexible member can include a body defining an arcuate intermediate portion extending between a first end and a second end. The arcuate intermediate portion can define a generally unshaped cross-section. The intermediate portion can define a throat adapted to slidably capture the flexible member. A mounting aperture can be defined through the first end. At least one finger can be formed on the body. The finger can extend toward the throat and is adapted to retain the flexible member within the throat. | 2009-01-15 |
20090014700 | EQUIPMENT HANDLING APPARATUS AND METHOD - A method of handling a work piece includes providing an equipment head that is coupled to and translatable along a mast defining a first axis, the equipment head including a head shaft defining a second axis non-parallel to the first axis, and providing a second shaft that is rotatable about a third axis non-parallel to the second axis. The method includes attaching a drive assembly to the second shaft, where the drive assembly is offset from and substantially parallel to the head shaft. The method includes moving the work piece with the drive assembly relative to at least one of the first axis, the second axis, and the third axis. | 2009-01-15 |
20090014701 | Fencescapes - In combination with a section of fencing having a predetermined length, a predetermined height and formed of a first predetermined material, the improvement comprises an apparatus for providing a decorative effect on such section of fencing. The apparatus includes a base sheet disposed on a pre-selected side of the section of fencing, such base sheet being formed of a second predetermined material. There is a top track disposed on a top portion of the base sheet. A bottom track is disposed of a bottom portion of the base sheet. A landscape background having a first predetermined design is disposed on a predetermined side of the base sheet closely adjacent a top portion of the base sheet and below such top track. A plurality of one of rocks and molded plastic simulating rocks is disposed on a front portion of the base sheet below such landscape background. Such one of rocks and molded plastic simulating rocks being formed in a decorative manner on the base sheet in a second predetermined design. | 2009-01-15 |
20090014702 | Apparatus for dispensing and tensioning wire - An apparatus for dispensing and tensioning wire from a coil, the apparatus comprising a frame ( | 2009-01-15 |
20090014703 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes the first transistor having first and second source/drain diffusion regions positioned below a second bit line to sandwich the first word line therebetween, and the second source/drain diffusion region positioned between the first and second word lines and connected to a first bit line, a second transistor having second and third source/drain diffusion regions positioned below the second bit line to sandwich the second word line therebetween, a first resistive memory element formed below the second bit line above the first source/drain diffusion region, and having terminals connected to the second bit line and the first source/drain diffusion region, and a second resistive memory element formed below the second bit line above the third source/drain diffusion region, and having terminals connected to the second bit line and the third source/drain diffusion region. | 2009-01-15 |
20090014704 | CURRENT CONSTRICTING PHASE CHANGE MEMORY ELEMENT STRUCTURE - A layer of nanopaiticles having a dimension on the order of 10 nm is employed to form a current constricting layer or as a hardmask for forming a current constricting layer from an underlying insulator layer. The nanoparticles are preferably self-aligning and/or self-planarizing on the underlying surface. The current constricting layer may be formed within a bottom conductive plate, within a phase change material layer, within a top conductive plate, or within a tapered liner between a tapered via sidewall and a via plug contains either a phase change material or a top conductive material. The current density of the local structure around the current constricting layer is higher than the surrounding area, thus allowing local temperature to rise higher than surrounding material. The total current required to program the phase change memory device, and consequently the size of a programming transistor, is reduced due to the current constricting layer. | 2009-01-15 |
20090014705 | PHASE CHANGE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A phase change memory device is provided. The phase change memory device comprises a substrate. A first conductive layer is formed on the substrate. A heating electrode is formed on the first conductive layer, and electrically connected to the first conductive layer, wherein the heating electrode comprises a carbon nanotube (CNT). A phase change material layer covers the heating electrode. A second conductive layer is formed on the phase change material layer, and electrically connected to the phase change material layer. | 2009-01-15 |
20090014706 | 4F2 SELF ALIGN FIN BOTTOM ELECTRODES FET DRIVE PHASE CHANGE MEMORY - Arrays of memory cells are described along with devices thereof and method for manufacturing. Memory cells described herein include memory elements comprising programmable resistive material and self-aligned bottom electrodes. In preferred embodiments the area of the memory cell is 4F | 2009-01-15 |
20090014707 | NON-VOLATILE SOLID STATE RESISTIVE SWITCHING DEVICES - Non-crystalline silicon non-volatile resistive switching devices include a metal electrode, a non-crystalline silicon layer and a planar doped silicon electrode. An electrical signal applied to the metal electrode drives metal ions from the metal electrode into the non-crystalline silicon layer to form a conducting filament from the metal electrode to the planar doped silicon electrode to alter a resistance of the non-crystalline silicon layer. Another electrical signal applied to the metal electrode removes at least some of the metal ions forming the conducting filament from the non-crystalline silicon layer to further alter the resistance of the non-crystalline silicon layer. | 2009-01-15 |
20090014708 | SEMICONDUCTOR DEVICE - A nonvolatile, sophisticated semiconductor device with a small surface area and a simple structure capable of switching connections between three or more electrodes. In a semiconductor device at least one of the electrodes contains atoms such as copper or silver in the solid electrolyte capable of easily moving within the solid electrolyte, and those electrodes face each other and applying a voltage switches the voltage on and off by generating or annihilating the conductive path between the electrodes. Moreover applying a voltage to a separate third electrode can annihilate the conductive path formed between two electrodes without applying a voltage to the two electrode joined by the conductive path. | 2009-01-15 |
20090014709 | PROCESS FOR MANUFACTURING AN ARRAY OF CELLS INCLUDING SELECTION BIPOLAR JUNCTION TRANSISTORS WITH PROJECTING CONDUCTION REGIONS - A process manufactures an array of cells in a body of semiconductor material wherein a common conduction region of a first conductivity type and a plurality of shared control regions, of a second conductivity type, are formed in the body. The shared control regions extend on the common conduction region and are laterally delimited by insulating regions. Then, a grid-like layer is formed on the body to delimit a first plurality of empty regions directly overlying the body and conductive regions of semiconductor material and the first conductivity type are formed by filling the first plurality of empty regions, each conductive region forming, together with the common conduction region and an own shared control region, a bipolar junction transistor. | 2009-01-15 |
20090014710 | NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY APPARATUS, AND METHOD OF MANUFACTURE THEREOF - A lower electrode layer | 2009-01-15 |
20090014711 | Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them - Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one second material with a second band gap encloses said nanoelement along at least part of its length, the second material being doped to provide opposite conductivity type charge carriers in respective first and second regions along the length of the of the nanowhisker, whereby to create in the nanowhisker by transfer of charge carriers into the nanowhisker, corresponding first and second regions of opposite conductivity type charge carriers with a region depleted of free carriers therebetween. The doping of the enclosure material may be degenerate so as to create within the nanowhisker adjacent segments having very heavy modulation doping of opposite conductivity type analogous to the heavily doped regions of an Esaki diode. In another embodiment, a nanowhisker is surrounded by polymer material containing dopant material. A step of rapid thermal annealing causes the dopant material to diffuse into the nanowhisker. In a further embodiment, a nanowhisker has a heterojunction between two different intrinsic materials, and Fermi level pinning creates a pn junction at the interface without doping. | 2009-01-15 |
20090014712 | TUNNEL JUNCTION LIGHT EMITTING DEVICE - A tunnel junction light emitting device according to the present invention is provided with an active layer and an electron tunneling region supplying the active layer with carriers. The electron tunneling region has a first p-type semiconductor layer, a second p-type semiconductor layer and an n-type semiconductor layer. The second p-type semiconductor layer is sandwiched between the first p-type semiconductor layer and the n-type semiconductor layer, and the first p-type semiconductor layer, the second p-type semiconductor layer and the n-type semiconductor layer form a tunnel junction to which a reverse bias is applied. An energy level at a valence band edge of the second p-type semiconductor layer is equal to or lower than an energy level at a valence band edge of the first p-type semiconductor layer. | 2009-01-15 |
20090014713 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF - The present invention relates to a GaN based nitride based light emitting device improved in Electrostatic Discharge (ESD) tolerance (withstanding property) and a method for fabricating the same including a substrate and a V-shaped distortion structure made of an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer on the substrate and formed with reference to the n-type nitride semiconductor layer. | 2009-01-15 |
20090014714 | CONTROL SYSTEM ARCHITECTURE FOR QUBITS - A control system architecture for quantum computing includes an array of qubits, which is divided into a plurality of sub-arrays based on a first direction and a second direction, the second direction intersecting the first direction, a plurality of control lines each coupled to a corresponding sub-array of qubits in the first directions a plurality of enable/unenable lines each coupled to a corresponding sub-array of qubits in the second direction, a controls signal source that generates a control signal, wherein the control lines are used to apply the control signal commonly to one or more sub-arrays of qubits in the first direction, an enable/unenable signal source that generates a enable signal, wherein the enable/unenable lines are used to apply the enable signal independently to the corresponding sub-array of qubits in the second direction to set a bias point of each qubit of the corresponding sub-array of qubits in the second direction between a first position, in which the qubit is unenabled and not responsive to the control signal, and a second position, in which the qubit is enabled and responsive to the control signal. | 2009-01-15 |
20090014715 | ORGANIC TRANSISTOR, ORGANIC TRANSISTOR ARRAY, AND DISPLAY APPARATUS - An off-current is reduced in an organic transistor, with which an organic transistor array is formed. A display apparatus is constructed using the organic transistor array. The organic transistor includes a substrate, a gate electrode, a separating electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor layer. The organic transistor has a region in which the separating electrode and the organic semiconductor layer are laminated. A power supply is connected to the separating electrode. | 2009-01-15 |
20090014716 | ORGANIC THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A disclosed organic thin-film transistor includes a gate electrode formed on a substrate, a gate insulation film formed on the gate electrode, a source electrode and a drain electrode formed, with a gap inbetween, at least over the gate electrode on which the gate insulation film is formed, an organic semiconductor layer formed in a region including the gap, an interlayer insulation film formed to cover the organic semiconductor layer, and a conductive layer formed on the interlayer insulation film and connected to the drain electrode. A part of the organic semiconductor layer is formed on the interlayer insulation film. | 2009-01-15 |
20090014717 | TEST IC STRUCTURE - A test IC structure is described, which is disposed in a scribe line region of a wafer and includes first and second test keys, first and second conductive plugs, first and second test pads, and a passivation layer over the scribe line region. The first/second test key includes a first/second active device and a first/second interconnect structure electrically connected thereto, wherein the second test key is arranged substantially parallel with the first one. The first/second plug is disposed over the first/second interconnect structure and contacts with the upmost metal layer thereof. The first/second test pad is disposed over the first and the second test keys and contacts with the first/second conductive plug. The passivation layer has therein a first opening exposing a portion of the first test pad and a second opening exposing a portion of the second test pad. | 2009-01-15 |
20090014718 | TEST ELEMENT GROUP FOR MONITORING LEAKAGE CURRENT IN SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A test element group for monitoring leakage current in a semiconductor device and a method of manufacturing the same are disclosed. The test element group for monitoring leakage current in a semiconductor device includes device isolation layers formed over a first conductivity type semiconductor substrate. A second conductivity type well may be formed over the first conductivity type semiconductor substrate. First conductivity type impurity regions may be formed in first active areas between the device isolation layers in the second conductivity type well. Monitoring contacts may be formed within the first active areas to monitor leakage current, using layout data such that a distance from each of the monitoring contacts to a border of each of the first active areas is set to have an allowable minimum value under a predetermined design rule. Accordingly, the test element group can monitor leakage current caused by PN junction diodes formed by junction of the impurity regions and the well in the active areas in a semiconductor device or misalignment of contacts, and can accurately monitor micro-leakage current in a semiconductor device during manufacturing. | 2009-01-15 |
20090014719 | SEMICONDUCTOR DEVICE WITH LARGE BLOCKING VOLTAGE - A junction FET having a large gate noise margin is provided. The junction FET comprises an n | 2009-01-15 |
20090014720 | METHOD OF TREATING INTERFACE DEFECTS IN A SUBSTRATE - The present invention relates to a method of treating a structure produced from semiconductor materials, wherein the structure includes a first and second substrates defining a common interface that has defects. The method includes forming a layer, called the disorganized layer, which includes the interface, in which at least a part of the crystal lattice is disorganized; and reorganizing the crystal lattice of the disorganized layer in order to force the defects back deeper into the first substrate. | 2009-01-15 |
20090014721 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD OF THE SAME - To achieve TFT having a high light-resistance characteristic with a suppressed light leak current at low cost by simplifying the manufacturing processes. The TFT basically includes a light-shielding film formed on a glass substrate that serves as an insulating substrate; an insulating film formed on the light-shielding film; a semiconductor film formed on the insulating film; and a gate insulating film formed on the semiconductor film. Each layer of a laminate that is configured with three layers of the light-shielding film, the insulating film, and the semiconductor film is patterned simultaneously. Further, each layer of the laminate is configured with silicon or a material containing silicon. | 2009-01-15 |
20090014722 | ACTIVE-MATRIX-DRIVE DISPLAY UNIT INCLUDING TFT - An active-matrix-drive LCD includes a TFT substrate, on which a TFT is formed. The TFT includes a gate electrode layer, a gate insulating film, a patterned semiconductor layer, and a source/drain electrode layer, which are consecutively formed on an insulating substrate of the TFT substrate. The gate electrode layer has a thickness smaller than a thickness of the gate insulating film. | 2009-01-15 |
20090014723 | Thin film transistor array of horizontal electronic field applying type and method for fabricating the same - A thin film transistor array of a horizontal electronic field applying type enhances brightness. The thin film transistor array includes a gate line and common line separated from the gate line; a data line crossing with the gate line to define pixel region and insulated from the gate line by a gate insulating film; a TFT connected to the gate line and the data line in the pixel region; a pixel electrode on a passivation film overlapping with the common line in the pixel region and connected to the TFT; and a common electrode on the passivation film opposed to the pixel electrode in the pixel region and connected to the common line, wherein the width of the pixel electrode at the overlapping portion between the common line and the pixel electrode is narrower than the width of the common line, and the edge of one side of the pixel electrode adjacent to the common electrode is formed on the inside of the edge of one side of the common line adjacent to the common electrode. | 2009-01-15 |
20090014724 | Semiconductor Device and Fabrication Method Thereof - This invention provides a semiconductor device having high operation performance and high reliability. An LDD region | 2009-01-15 |
20090014725 | Ion doping apparatus, ion doping method, semiconductor device and method of fabricating semiconductor device - An ion doping apparatus includes: a chamber | 2009-01-15 |
20090014726 | ACTIVE DEVICE ARRAY SUBSTRATE - An active device array substrate including a substrate, a pixel array, pads, first switching devices, and second switching devices is provided. The pixel array is disposed on a display region of the substrate. The pads, the first and the second switching devices are disposed on a peripheral circuit region of the substrate. The pads and the pixel array are electrically connected. The first and the second switching devices are at the outside of the pads. Each first switching device is electrically connected to one of the pads and has a source, a drain, and a gate electrically connected to the source and the pad. Each second switching device is electrically connected to two adjacent first switching devices and has a gate, a source, and a drain. The source and the drain are electrically connected to the drain and the source of the adjacent first switching device, respectively. | 2009-01-15 |
20090014727 | THIN FILM ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film array panel is provided, which includes: a plurality of signal lines including contact parts for contact with an external device; a plurality of thin film transistors connected to the signal lines; an insulating layer formed on the signal lines and the thin film transistors; and a plurality of pixel electrodes formed on the insulating layer and connected to the thin film transistors, wherein the insulating layer includes a contact portion disposed on the contact parts of the signal lines and having a thickness smaller than other portions and the contact portion of the insulating layer includes an inclined portion having an inclination angle smaller than about 45 degrees. | 2009-01-15 |
20090014728 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor layer and a first semiconductor element located in the first semiconductor layer. The semiconductor device also includes a second semiconductor layer of a transparent semiconductor material. The second semiconductor layer is disposed on the first semiconductor layer covering the first semiconductor element. The semiconductor device also includes a second semiconductor element located in the second semiconductor layer. The semiconductor device also includes a wire extending within the second semiconductor layer and electrically connecting the first and second semiconductor elements. | 2009-01-15 |
20090014729 | Semiconductor light emitting device including group III nitride semiconductor - A semiconductor light emitting device comprises: a substrate; a semiconductor stack formed on one of surfaces of the substrate, the semiconductor stack including an active layer composed of a group III nitride semiconductor having a substantially nonpolar or substantially semipolar plane as a main surface; a first electrode formed in a part of a first electrode surface which is the other surface of the substrate; and a second electrode formed on a second electrode surface opposite to the first electrode surface across the substrate and semiconductor stack. | 2009-01-15 |
20090014730 | SILICON CARBIDE TRANSISTORS AND METHODS FOR FABRICATING THE SAME - An exemplary method for forming an insulator layer over a silicon carbide substrate includes providing a silicon carbide substrate and anodizing the silicon carbide substrate in a liquid ambient at a temperature of not more than 200° C. to form a silicon dioxide layer thereon. Also provided are silicon carbide transistors and methods for fabricating the same. | 2009-01-15 |
20090014731 | LED Chip Design for White Conversion - A light emitting diode is disclosed, together with associated wafer structures, and fabrication and mapping techniques. The diode includes an active portion, a raised border on the top surface of the active portion and around the perimeter of the top surface of the active portion, a resin in the space defined by the border and the top surface of the active portion, and phosphor particles in the resin that convert the frequencies emitted by the active portion. | 2009-01-15 |
20090014732 | CHIP-TYPE LIGHT EMITTING DEVICE AND WIRING SUBSTRATE FOR THE SAME - For providing a chip-type light emitting device, having a plural number of light emitting elements therein, so as to enable to obtain a high optical output with preferable conversion efficiency thereof, and a wiring substrate for that, the chip-type light emitting device, mounting the plural number of the light emitting diodes | 2009-01-15 |
20090014733 | LIGHT-EMITTING DIODE MODULE - The present invention relates to a light-emitting diode (LED) module ( | 2009-01-15 |
20090014734 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes an active layer, an electrode formed above the active layer, a current spreading layer formed between the active layer and the electrode, having n-type conductivity, having a larger bandgap energy than the active layer, and spreading electrons injected from the electrode in the plane of the active layer, and a surface processed layer formed on the current spreading layer, having a larger bandgap energy than the active layer, and having an uneven surface region with a large number of concave-convex structures. The electrode is not formed on the uneven surface region. The conduction band edge energy from the Fermi level of the surface processed layer is higher than that of the current spreading layer. | 2009-01-15 |
20090014735 | Semiconductor device and semiconductor device fabrication method - There is provided a semiconductor device in which a light emitting element is mounted on a substrate, having a bonding wire which is connected to the light emitting element, and a through electrode which is connected to the bonding wire and is formed in such a manner as to pass through the substrate at a position lying directly below a connecting portion with the bonding wire. | 2009-01-15 |
20090014736 | Coating method utilizing phosphor containment structure and devices fabricated using same - Methods for fabricating a semiconductor devices, and in particular light emitting diodes (LEDS) comprising providing a plurality of semiconductor devices on a substrate and forming a contact on at least some of the semiconductor devices. A containment structure is formed on at least some of the semiconductor devices having a contact with each containment structure defining a deposition area excluding the contact. A coating material is deposited then within the deposition area, with the coating material not covering the contact. A light emitting diode (LED) chip wafer comprising a plurality of LEDs on a substrate wafer with at least some of the LEDs having a contact. A plurality of containment structures are included, each of which is associated with a respective one of the plurality of LEDs. Each of the containment structures at least partially on its respective one of the LEDs and defining a deposition area on its respective one of the LEDs. The deposition area excludes the contact. A coating is included in each of the deposition areas. | 2009-01-15 |
20090014737 | LIGHT-EMITTING DIODES LAMP LENS STRUCTURE - The present invention is an LED lamp lens, on which orderly arranged surface plural protuberances. And with the differences of light perviousness, a particular luminous pattern of the LED lamp is displayed when the LED lamp is turned on. | 2009-01-15 |
20090014738 | Light emitting diode devices and manufacturing method thereof - A light emitting diode (LED) device includes a stacked epitaxial structure, a heat-conductive plate and a seed layer. The stacked epitaxial structure sequentially includes a first semiconductor layer (N—GaN), a light emitting layer, and a second semiconductor layer (P—GaN). The heat-conductive plate is disposed on the first semiconductor layer, and the seed layer is disposed between the first semiconductor layer and the heat-conductive plate. Also, the present invention discloses a manufacturing method thereof including the steps of: forming at least one temporary substrate, which is made by a curable polymer material, on an LED device, and forming at least a heat-conductive plate on the LED device. | 2009-01-15 |
20090014739 | LIGHT-EMITTING DIODE PACKAGE STRUCTURE - The present invention is an improved Light-Emitting Diode (LED) package structure comprising a light-emitting diode chip, a package board of heat conductive semiconductor material, a lead frame, and a circuit. Whereon the package board installs plural thermal vias to conduct the electricity circuit and transmit the heat out of the package due to the LED luminescing as well. | 2009-01-15 |
20090014740 | LIGHT EMITTING DEVICES AND RELATED METHODS - Devices, such as light-emitting devices (e.g., LEDs), and methods associated with such devices are provided. A light-emitting device may include an interface through which emitted light passes therethrough. The interface having a dielectric function that varies spatially according to a pattern, wherein the pattern is arranged to provide light emission that has a substantially isotropic emission pattern and is more collimated than a Lambertian distribution of light. | 2009-01-15 |