02nd week of 2012 patent applcation highlights part 13 |
Patent application number | Title | Published |
20120006997 | ELECTRON BEAM DEVICE WITH TILTING AND DISPERSION COMPENSATION, AND METHOD OF OPERATING SAME - An electron beam device | 2012-01-12 |
20120006998 | CONFIGURATIONS OF USING A POINT LIGHT SOURCE IN THE CONTEXT OF SAMPLE SEPARATION - A sample detection apparatus for detecting a fluidic sample in a flow cell of a sample separation system, the sample detection apparatus comprising an electromagnetic radiation source having a chamber configured for generating a plasma, and an energy source configured for generating and directing an energy beam towards the plasma for heating the plasma so that the plasma emits primary electromagnetic radiation, and a detection path being arranged in a detection direction, wherein the detection direction is arranged angularly displaced with respect to a propagation direction of the energy beam, so that primary electromagnetic radiation propagating in the detection direction enters the detection path, wherein the detection path comprises an electromagnetic radiation detector configured for detecting secondary electromagnetic radiation being characteristic for the fluidic sample and resulting from an interaction between the fluidic sample and the primary electromagnetic radiation propagating in the detection direction or at least a portion thereof. | 2012-01-12 |
20120006999 | System For Radiation Sterilization Of Medical Devices - Methods and systems for selection radiation exposure in sterilization of medical devices are disclosed. | 2012-01-12 |
20120007000 | Multi-color fluorescence enhancement from a photonic crystal surface - A photonic crystal substrate exhibiting resonant enhancement of multiple fluorophores has been demonstrated. The device, which can be fabricated uniformly from plastic materials over a ˜3×5 in | 2012-01-12 |
20120007001 | FLUOROSCOPY SYSTEM, FLUOROSCOPY APPARATUS, AND FLUOROSCOPY METHOD - Observation is performed with a fluorescence image having high quantitativeness by satisfactorily eliminating dependencies on distance and angle that remain in an image subjected to division. Provided is a fluoroscopy system | 2012-01-12 |
20120007002 | CHARGED PARTICLE BEAM PATTERN FORMING APPARATUS AND CHARGED PARTICLE BEAM PATTERN FORMING METHOD - A charged particle beam pattern forming apparatus, includes a charge amount distribution calculation unit configured to calculate a charge amount distribution charged by vertical incidence of a charged particle beam on a pattern forming region of a target object; a position correction unit configured to calculate, using the charge amount distribution charged, a corrected position of each pattern forming position corrected for a misregistration amount including a misregistration amount dependent on a deflection position where the charged particle beam is deflected, the misregistration amount caused by an amount of charge; and a pattern generator configured to form a pattern in the corrected position by using the charged particle beam. | 2012-01-12 |
20120007003 | System For Radiation Sterilization Of Medical Devices Using A Package Having Modifier Sections - Methods and systems for selection radiation exposure in sterilization of medical devices are disclosed. | 2012-01-12 |
20120007004 | CANISTER FOR TRANSPORTING AND/OR STORING RADIOACTIVE MATERIALS COMPRISING RADIALLY STACKED RADIOLOGICAL PROTECTION COMPONENTS - A canister for transporting/storing radioactive materials, comprising two concentric shells between which is housed a radiological protection device forming a barrier against gamma radiation, comprising a first and a second metal radiological protection components superimposed along a radial direction of the canister, the first component being supported against the outer shell and the second component being supported against the inner shell. In addition, the components are in contact with each other along an interface taking, in section along any plane integrating the longitudinal axis, the form of a straight line segment inclined in relation to this axis. | 2012-01-12 |
20120007005 | OPTO-ISOLATOR THAT USES A NONTRANSPARENT HOLLOW TUBE AS THE OPTICAL WAVEGUIDE EXTENDING BETWEEN THE TRANSMITTER AND RECEIVER MODULES OF THE OPTO-ISOLATOR - In an opto-isolator, a nontransparent hollow tube having a smooth inner surface with mirror-like qualities is used as the optical waveguide for coupling optical signals between the transmitter module and the receiver module and for providing electrical transient isolation. | 2012-01-12 |
20120007006 | WATER VALVE - A water valve includes a tubular connector having a through hole extending through two distal ends thereof, a chamber in the through hole on the middle and a top opening, a casing accommodated in the chamber inside the tubular connector and having an accommodation chamber, two communication holes in communication between the accommodation chamber and the two ends of the through hole of the tubular connector and an opening corresponding to the top opening of the tubular connector, and a handle having a stem inserted through the top opening of the tubular connector and the opening of the casing and a valve block with a through hole connected to the distal end of the stem and accommodated in the accommodation chamber of the casing. | 2012-01-12 |
20120007007 | LOCKING MECHANISM FOR UNISEX BALL VALVE COUPLING - A hydraulic valve coupling has an interlock mechanism that includes at least one blocking member located within an interlock passage of a body portion of the valve coupling. The interlock passage has a first end opening to the valve shaft and a second end opening to an interface groove of the valve coupling. The at least one blocking member can be retracted within the interlock passage such that the valve coupling can be rotated and disengaged from a mating coupling. When the valve is in the open position, the at least one blocking member is positioned within the interlock passage such that it contacts the mating coupling and prevents rotation of the valve coupling relative to the mating coupling. The second end of the at least one blocking member can be shaped such that it is retracted as a result of contact with the mating coupling and without the assistance of a biasing mechanism. | 2012-01-12 |
20120007008 | FLAP ASSEMBLY, IN PARTICULAR EXHAUST GAS FLAP ASSEMBLY - For a flap assembly, in particular an exhaust gas flap assembly, with the flap mounted on both sides via bearing devices in the housing, the disclosure describes a design in which a bearing body is supported radially against an annular collar of the bearing device and, by way of the annular collar, is held braced in a radially spring-loaded manner in a predefined radial position. | 2012-01-12 |
20120007009 | Method and apparatus for generating high-speed pulsed fluid jets - An apparatus for generating high-speed pulsed fluid jets. A valve assembly has a valve body with an inlet and an outlet. A valve shuttle is slidably or movably mounted with respect to the valve body. The valve shuttle is positioned within a cavity of the valve body and divides the cavity into an upper or inlet cavity and a lower or outlet cavity. The valve shuttle has a passage in communication with the upper cavity and the lower cavity. In an open condition of the valve assembly, fluid communication is formed between the inlet, the inlet cavity, the passage, the outlet cavity and the outlet. | 2012-01-12 |
20120007010 | AIRCRAFT INCLUDING A FUEL VALVE AND A CONTROL ACTUATOR FASTENED TO THE VALVE - The aircraft comprises:
| 2012-01-12 |
20120007011 | Separating agent for optical isomer - Disclosed is a separating agent for optical isomer which is excellent in optical separation ability. Specifically disclosed is a separating agent for optical isomer comprising: an inclusion complex including a π-conjugated polymer in a polymer compound having a hydroxy group or an amino group; and a carrier, the inclusion complex being carried by the carrier. | 2012-01-12 |
20120007012 | METHOD FOR PRODUCING XEROGEL COMPOSITES - The invention relates to a process for producing xerogel composites, which comprises:
| 2012-01-12 |
20120007013 | COMPOSITE MAGNETIC MATERIAL - A composite magnetic material is made by performing pressure compacting on metal magnetic powder to which a binding material is added, and the binding material contains an acrylic resin having a silyl group as a functional group. In addition, the composite magnetic material is subjected to a heat treatment at a temperature between 700 and 1,000° C. in a non-oxidizing atmosphere after the pressure compacting. The composite magnetic material has magnetic characteristics useful for electromagnetic components such as an inductor, a choke coil, and a transformer with a small size and at a high frequency. | 2012-01-12 |
20120007014 | COMPOSITE MAGNETIC MATERIAL AND METHOD OF PREPARING THE SAME - The present invention discloses a composite magnetic material. The composite magnetic material may comprise an Nd—Fe—B alloy and a Fe-based soft magnetic alloy having the general formula of Fe | 2012-01-12 |
20120007015 | FERRITE MATERIAL AND ELECTRONIC COMPONENT - A ferrite material and an electronic component which employs sintered ferrite formed from the ferrite material. The ferrite material is obtained by adding, as minor ingredients, 0.06-0.50 parts by weight of bismuth oxide in terms of Bi2O3, 0.11-0.90 parts by weight of titanium oxide in terms of TiO2, and 0.06-0.46 parts by weight of barium oxide in terms of BaO to a ferrite powder comprising iron oxide, copper oxide, zinc oxide, and nickel oxide as major ingredients. The weight ratio among the bismuth oxide, the titanium oxide, and the barium oxide is as follows: when the proportion of the bismuth oxide in terms of Bi2O3 is taken as 1.00, then the proportion of the titanium oxide in terms of TiO2 is 1.08-2.72 and that of the barium oxide in terms of BaO is 0.72-1.20. | 2012-01-12 |
20120007016 | AZEOTROPE-LIKE COMPOSITION OF 1,1,1,2,2,3,3-HEPTAFLUORO-3-METHOXYPROPANE AND 1-CHLORO-3,3,3-TRIFLUOROPROPENE - Provided are azeotrope-like compositions comprising 1,1,1,2,2,3,3-heptafluoro-3-methoxy propane and E-1-chloro-3,3,3-trifluoropropene (K-1233zd) and uses thereof, including use in refrigerant compositions, refrigeration systems, blowing agent compositions, solvent, and aerosol propellants. | 2012-01-12 |
20120007017 | HEAT DISSIPATING MATERIAL AND SEMICONDUCTOR DEVICE USING SAME - Disclosed is a heat dissipating material which is interposed between a heat-generating electronic component and a heat dissipating body. This heat dissipating material contains (A) 100 parts by weight of a silicone gel cured by an addition reaction having a penetration of not less than 100 (according to ASTM D 1403), and (B) 500-2000 parts by weight of a heat conductive filler. Also disclosed is a semiconductor device comprising a heat-generating electronic component and a heat dissipating body, wherein the heat dissipating material is interposed between the heat-generating electronic component and the heat dissipating body. | 2012-01-12 |
20120007018 | SLURRY COMPOSITIONS FOR SELECTIVELY POLISHING SILICON NITRIDE RELATIVE TO SILICON OXIDE, METHODS OF POLISHING A SILICON NITRIDE LAYER AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME - Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same are provided. The slurry compositions include a first agent for reducing an oxide polishing rate, an abrasive particle and water. The first agent includes poly(acrylic acid), The slurry composition may have a high polishing selectivity of silicon nitride relative to silicon oxide to be employed in selectively polishing a silicon nitride layer in a semiconductor manufacturing process. | 2012-01-12 |
20120007019 | WET ETCHING SOLUTION - A wet etching solution includes hydrogen fluoride in an amount of about 0.1% to about 3% by weight of the etching solution, an inorganic acid in an amount of about 10% to about 40% by weight of the etching solution, the inorganic acid being one or more of nitric acid, sulfuric acid, and/or hydrochloric acid, a nonionic surfactant in an amount of about 0.0001% to about 5% by weight of the etching solution, the surfactant including one or ore of alkylphenol ethoxylate and/or ammonium lauryl sulfate, and water. | 2012-01-12 |
20120007020 | METHOD FOR PRODUCING INORGANIC COMPOUNDS - Compounds (I) A | 2012-01-12 |
20120007021 | PROCESS FOR PRODUCING LITHIUM IRON PHOSPHATE PARTICLES AND METHOD FOR PRODUCING SECONDARY CELL - For production of NASICON type lithium iron phosphate particles, it is desired to increase the uniformity of the particle size and the chemical composition and further to improve the crystallinity. | 2012-01-12 |
20120007022 | Control of Cyanate in Aqueous Urea Solutions by non-1,2-Ethylene Diamine like Compounds for the Protection of Protein/Peptide Carbamylation - Embodiments of the present invention generally relate to processing of peptides in urea solutions and substantial prevention of carbamylation of the peptide. | 2012-01-12 |
20120007023 | Sodium Silicate Solutions - A method is provided for treating silica sand scrubs (SSS) generated and accumulated as waste in the chloride manufacturing process of titanium dioxide pigment. A hydrothermal process is used to produce sodium silicate solutions of modulus 3.0 to 3.8, and precipitated silicas. In some embodiments, the process uses two specific principal reaction stages. A sodium silicate solution having a low SiO | 2012-01-12 |
20120007024 | Triplet Excitation Scavenging in Solid-State Organic Materials - The present invention is directed to solid state organic light emitting devices and to methods for triplet excitation scavenging in such devices. More particularly, the present invention relates to a method for substantially reducing a triplet population in a solid state organic material, the method comprising providing molecules exhibiting non-vertical triplet energy transfer in the solid state organic material or at a distance smaller than a triplet exciton diffusion length from the solid state organic material. | 2012-01-12 |
20120007025 | NICKEL/LANTHANA CATALYST FOR PRODUCING SYNGAS - The present invention relates to a nickel/lanthana-(Ni/La | 2012-01-12 |
20120007026 | TETRAZINE MONOMERS AND COPOLYMERS FOR USE IN ORGANIC ELECTRONIC DEVICES - Copolymers of formula (I): | 2012-01-12 |
20120007027 | ACTIVATED CARBON BLACKS - Activated carbon blacks and the enhanced methods of preparing activated carbon blacks have been discovered. In order to form an activated carbon black, a conductive carbon black is coated with nanoparticles containing metal, and then catalytically activated in steam and an inert gas to form a catalytically activated mesoporous carbon black, where the mass of the catalytically activated carbon black is lower than the mass of the carbon black. The nanoparticles may serve as catalysts for activation rugosity of mesoporous carbon blacks. The catalytically activated carbon black material may be used in all manner of devices that contain carbon materials. | 2012-01-12 |
20120007028 | POLYMER-SILICON COMPOSITE PARTICLES, METHOD OF MAKING THE SAME, AND ANODE AND LITHIUM SECONDARY BATTERY INCLUDING THE SAME - The present invention relates to polymer-silicon composite particles using silicon having high energy density, a method of making the same, an anode and a lithium secondary battery including the same. The silicon having high energy density is used as an anode active material to provide a lithium secondary battery having large capacity. Silicon-polymer composite particles having a metal plated on the surface thereof are provided to solve the problem that silicon has low electrical conductivity and a method of preparing the same is provided to produce an electrode having improved electrical conductivity. Furthermore, silicon-polymer composite particles having a metal coated on the surface thereof through electroless plating are prepared and an electrode is formed using the silicon-polymer composite particles. | 2012-01-12 |
20120007029 | Tree Stand Hanger - A hoist for elevating a hunter's tree stand from the ground to a vertical position alongside of the trunk of a tree comprises a segmented, extendable and contractible pole having a tree clamping ring assembly pivotally mounted to the top section of the pole and a V-shaped jaw for engaging the tree trunk near the bottom of the pole. A first rope is tied at one end to the clamping ring assembly and extends down to a retractable reel located near the bottom of the pole. By pulling on this rope, the clamping ring assembly can be pivoted to an angle allowing the ring to pass about the tree trunk and when released, the clamping ring assembly pivots downward under the force of gravity which secures the pole to the tree at its upper end. The clamping ring assembly further includes a pulley, about which a second rope is deployed. One end of the second rope is adapted to be connected to the hunter's tree stand at its upper end and the other end can be pulled on to elevate the tree stand. | 2012-01-12 |
20120007030 | Tool and Method for Installing Cable into Molding - A tool and a method for installing one or more cables into a molding is disclosed. The tool includes a laying chute on a first end of the tool having an open passage along its length for inserting one or more cables into the laying chute. The tool also includes one or more closing devices that are rotatably attached to the laying chute to allow insertion of the one or more cables into the laying chute. The cable is inserted into the laying chute and secured using the closing devices. Thereafter, the tool is moved along the length of the molding for inserting the cable therein. | 2012-01-12 |
20120007031 | PHASE CHANGE MEMORY CELL WITH HEATER AND METHOD THEREFOR - A method for forming a phase change memory cell (PCM) includes forming a heater for the phase change memory and forming a phase change structrure electrically coupled to the heater. The forming a heater includes siliciding a material including silicon to form a silicide structure, wherein the heater includes at least a portion of the silicide structure. The phase change structure exhibits a first resistive value when in a first phase state and exhibits a second resistive value when in a second phase state. The silicide structure produces heat when current flows through the silicide structure for changing the phase state of the phase change structure. | 2012-01-12 |
20120007032 | PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A phase-change memory device with improved deposition characteristic and a method of fabricating the same are provided. The phase-change memory device includes a semiconductor substrate having a phase-change area, a first material-rich first phase-change layer forming an inner surface of the phase-change area and comprised of a hetero compound of the first material and a second material, and a second phase-change layer formed on a surface of the first phase-change layer to fill the phase-change area. | 2012-01-12 |
20120007033 | PHASE-CHANGE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A phase-change memory device and a method of manufacturing the same are provided. The method of manufacturing the phase-change memory device includes forming a heating electrode, having a pillar shape, on a semiconductor substrate, and forming a phase-change pattern passing through an upper surface of the heating electrode. A sidewall of the phase-change pattern is in contact with the upper surface of the heating electrode. | 2012-01-12 |
20120007034 | PHASE-CHANGE MEMORY DEVICE HAVING MULTIPLE DIODES - A phase-change memory device with an improved current characteristic is provided. The phase-change memory device includes a metal word line, a semiconductor layer of a first conductivity type being in contact with the metal word line, and an auxiliary diode layer being in contact with metal word line and the semiconductor layer. | 2012-01-12 |
20120007035 | Intrinsic Programming Current Control for a RRAM - A resistive switching device. The device includes a substrate and a first dielectric material overlying a surface region of the substrate. The device includes a first electrode overlying the first dielectric material and an optional buffer layer overlying the first electrode. The device includes a second electrode structure. The second electrode includes at least a silver material. In a specific embodiment, a switching material overlies the optional buffer layer and disposed between the first electrode and the second electrode. The switching material comprises an amorphous silicon material in a specific embodiment. The amorphous silicon material is characterized by a plurality of defect sites and a defect density. The defect density is configured to intrinsically control programming current for the device. | 2012-01-12 |
20120007036 | PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A phase-change memory device includes a lower electrode; and at least two phase-change memory cells sharing the lower electrode. Another phase-change memory device includes a heating layer having a smaller contact area with a phase-change material layer and a greater contact area with a PN diode structure. | 2012-01-12 |
20120007037 | CROSS-POINT MEMORY UTILIZING Ru/Si DIODE - Memory devices utilizing memory cells including a resistive element and a diode coupled in series between two conductors. The diodes include a ruthenium material and a silicon material. The diodes further include an interface on the silicon material of ruthenium or ruthenium silicide. A ruthenium silicide interface may be a polycrystalline ruthenium silicide. | 2012-01-12 |
20120007038 | Reconfigurable Multilayer Circuit - A reconfigurable multilayer circuit ( | 2012-01-12 |
20120007039 | CRYSTAL GROWTH METHOD AND SEMICONDUCTOR DEVICE - A method of crystal growth is provided which can suppress development of dislocations and cracks and a warp in a substrate. The method of crystal growth of a group III nitride semiconductor has: a step of heating a silicon substrate; and a step of forming a depressed structure on the substrate surface by advance-feeding onto the heated silicon substrate a gas containing at least TMA (trimethylaluminum). | 2012-01-12 |
20120007040 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM INCLUDING THE SAME - A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers. The active layer includes a first active layer adjacent to the second conductive type semiconductor layer, a second active layer adjacent to the first conductive type semiconductor layer, and a gate quantum barrier between the first and second active layers. | 2012-01-12 |
20120007041 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM - A light emitting device, a light emitting device package, and a lighting system are provided. The light emitting device includes: a second conductive semiconductor layer; an active layer over the second conductive semiconductor layer; a first conductive semiconductor layer over the active layer; and a second electrode layer including a reflective layer under the second conductive semiconductor layer. The active layer includes a second active layer that actually emits light on the reflective layer and a first active layer that does not emit light on the second active layer. A distance between the reflective layer and the second active layer satisfies a constructive interference condition. | 2012-01-12 |
20120007042 | LIGHT EMITTING DEVICE WITH A SINGLE QUANTUM WELL ROD - A light emitting device comprising a first semiconductor layer, a second semiconductor layer and a quantum well layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on the opposite sides of the quantum well layer, the quantum well layer comprising a plurality of quantum well rods which are separated from each other, and each of the quantum well rods has only one quantum well. | 2012-01-12 |
20120007043 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting device includes an n-type silicon thin film ( | 2012-01-12 |
20120007044 | LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - Disclosed are a light emitting device and a method of fabricating the same. The light emitting device includes a substrate; first and second light emitting cells, each including a first semiconductor layer, an active layer, and a second semiconductor layer; and a connector located between the first and second light emitting cells and the substrate, to electrically connect the first and second light emitting cells to each other. The connector extends from the second semiconductor layer of the first light emitting cell, across the substrate, and through central regions of the second semiconductor layer and active layer of the second light emitting cells, to contact the first semiconductor layer of the second light emitting cell. | 2012-01-12 |
20120007045 | P-TYPE SEMICONDUCTOR DEVICE COMPRISING TYPE-2 QUANTUM WELL AND FABRICATION METHOD THEREOF - Disclosed herein are a method of generating a two-dimensional hole gas (2DHG) using a type-2 quantum well formed using semiconductors with different electron affinities or band gap, and a high-speed p-type semiconductor device using the 2DHG. To this end, the method includes providing a semiconductor substrate; growing a first semiconductor layer on the semiconductor substrate, growing a second semiconductor layer with a different electron affinity or band gap from the first semiconductor layer on the first semiconductor layer, and growing a third semiconductor layer with a different electron affinity or band gap from the second semiconductor layer, thereby forming a type-2 quantum well; and forming a p-type doping layer in the vicinity of the type-2 quantum well, thereby generating the 2DHG. | 2012-01-12 |
20120007046 | CARBON NANOTUBE HYBRID PHOTOVOLTAICS - Systems, methods and devices for the efficient photocurrent generation in single- or multi-walled carbon nanotubes, which includes (SWNTs)/poly [3-hexylthiophene-2,5-diyl] (P3HT) hybrid photovoltaics, and exhibit the following features: photocurrent measurement at individual SWNT/P3HT heterojunctions indicate that both semiconducting (s-) and metallic (m-) SWNTs function as excellent hole acceptors; electrical transport and gate voltage dependent photocurrent indicate that P3HT p-dopes both s-SWNT and m-SWNT, and exciton dissociation is driven by a built-in voltage at the heterojunction. Some embodiments include a mm | 2012-01-12 |
20120007047 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device including a substrate, an n-type semiconductor layer formed on the substrate, an active layer laminated on the n-type semiconductor layer and capable of emitting a light, a p-type semiconductor layer laminated on the active layer, an n-electrode which is disposed on a lower surface of the semiconductor substrate or on the n-type semiconductor layer and spaced away from the active layer and p-type semiconductor layer, and a p-electrode which is disposed on the p-type semiconductor layer and includes a reflective ohmic metal layer formed on the dot-like metallic layer, wherein the light emitted from the active layer is extracted externally from the substrate side. | 2012-01-12 |
20120007048 | III-Nitride Based Semiconductor Structure with Multiple Conductive Tunneling Layer - A semiconductor structure includes a substrate and a conductive carrier-tunneling layer over and contacting the substrate. The conductive carrier-tunneling layer includes first group-III nitride (III-nitride) layers having a first bandgap, wherein the first III-nitride layers have a thickness less than about 5 nm; and second III-nitride layers having a second bandgap lower than the first bandgap, wherein the first III-nitride layers and the second III-nitride layers are stacked in an alternating pattern. The semiconductor structure is free from a III-nitride layer between the substrate and the conductive carrier-tunneling layer. The semiconductor structure further includes an active layer over the conductive carrier-tunneling layer. | 2012-01-12 |
20120007049 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a nitride-based semiconductor device. The nitride-based semiconductor device includes: a base substrate having a diode structure; an epi-growth film disposed on the base substrate; and an electrode part disposed on the epi-growth film, wherein the diode structure includes: first-type semiconductor layers; and a second-type semiconductor layer which is disposed within the first-type semiconductor layers and has both sides covered by the first-type semiconductor layers. | 2012-01-12 |
20120007050 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A GROUP-III NITRIDE SUPERLATTICE LAYER ON A SILICON SUBSTRATE - Provided is a semiconductor device containing a silicon single crystal substrate | 2012-01-12 |
20120007051 | Process for Forming a Surrounding Gate for a Nanowire Using a Sacrificial Patternable Dielectric - Techniques for defining a damascene gate in nanowire FET devices are provided. In one aspect, a method of fabricating a FET device is provided including the following steps. A SOI wafer is provided having a SOI layer over a BOX. Nanowires and pads are patterned in the SOI layer in a ladder-like configuration. The BOX is recessed under the nanowires. A patternable dielectric dummy gate(s) is formed over the recessed BOX and surrounding a portion of each of the nanowires. A CMP stop layer is deposited over the dummy gate(s) and the source and drain regions. A dielectric film is deposited over the CMP stop layer. The dielectric film is planarized using CMP to expose the dummy gate(s). The dummy gate(s) is at least partially removed so as to release the nanowires in a channel region. The dummy gate(s) is replaced with a gate conductor material. | 2012-01-12 |
20120007052 | Apparatus, System, and Method for Dual-Channel Nanowire FET Device - An apparatus, system, and method for dual-channel FET devices is presented. In some embodiments, the nanowire FET device may include a first transistor on a substrate, where the first transistor includes a first group of nanowires made of silicon. The nanowire FET device may also include a second transistor on the same substrate, where the second transistor includes a second group of nanowires made of silicon-germanium. | 2012-01-12 |
20120007053 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed herein is a nitride-based semiconductor device. The nitride-based semiconductor device includes a base substrate having a PN junction structure, an epi-growth layer disposed on the base substrate, and an electrode unit disposed on the epi-growth layer. | 2012-01-12 |
20120007054 | Self-Aligned Contacts in Carbon Devices - A method for forming a semiconductor device includes forming a carbon material on a substrate, forming a gate stack on the carbon material, removing a portion of the substrate to form at least one cavity defined by a portion of the carbon material and the substrate, and forming a conductive contact in the at least one cavity. | 2012-01-12 |
20120007055 | ORGANIC LIGHT EMITTING DIODE DEVICE - An organic light emitting diode device includes a first electrode, a second electrode, and an emission layer disposed between the first and second electrodes. The first electrode includes a first layer and a second layer. The first layer includes ytterbium (Yb), samarium (Sm), lanthanum (La), yttrium (Y), calcium (Ca), strontium (Sr), cesium (Cs), ruthenium (Ru), barium (Ba), or a combination thereof and having a thickness ranging from about 40 to 200 Å. The second layer includes silver (Ag), aluminum (Al), copper (Cu), chromium (Cr), or a combination thereof and having a thickness ranging from about 100 to 250 Å. | 2012-01-12 |
20120007056 | PROCESS FOR GROWING AN ELECTRON INJECTION LAYER TO IMPROVE THE EFFICIENCY OF ORGANIC LIGHT EMITTING DIODES - An organic light emitting functional device with organic electron injection layer to improve the injection of electrons from the cathode in an organic light emitting diode. In particular, the device relates to the use of electron transport layer 4,7-di phenyl-1,10 phenanthroline (herein after called as BPhen) and another organic semiconductor Tetracyano quino dimethane (herein after called as TCNQ) and optimizing the thickness and doping percentage of the composition in an organic light emitting device. The main use of the composed injection layer is to balance the injection of holes from the anode side and the injection of electrons from cathode side and thus increase the efficiency of Organic light emitting diodes. | 2012-01-12 |
20120007057 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device including a substrate; at least one thin-film transistor (TFT) formed on the substrate; a planarizing layer covering the TFT; a pixel electrode, which is formed on the planarizing layer and is connected to the TFT; a protective layer surrounding an edge of the pixel electrode; a pixel defining layer (PDL), which has an overhang (OH) structure protruding more than the top surface of the protective layer, covers the protective layer and the edge of the pixel electrode, and exposes a portion of the pixel electrode surrounded by the protective layer; a counter electrode facing the pixel electrode; and an intermediate layer, which is interposed between the pixel electrode and the counter electrode and includes a light-emitting layer and at least one organic layer, where the thickness of the intermediate layer is greater than the thickness of the protective layer. | 2012-01-12 |
20120007058 | Organic memory device using iridium organometallic compound and fabrication method thereof - Disclosed are a composition comprising a mixture of at least one iridium organometallic compound and an electrically conductive polymer, an organic active layer comprising the same, an organic memory device comprising the organic active layer and methods for fabricating the same. The organic memory device may include a first electrode, a second electrode and the organic active layer between the first and second electrodes. The organic memory device possesses the advantages of rapid switching time, decreased operating voltage, decreased fabrication costs, increased reliability and improved non-volatility. | 2012-01-12 |
20120007059 | ORGANIC ELECTROLUMINESCENCE ELEMENT AND COMPOUND - An organic electroluminescence device composed of a cathode, an anode, and an organic thin film layer between the cathode and the anode. The organic thin film layer includes one or more layers. At least one layer of the organic thin film layer is a light emitting layer and at least one light emitting layer contains a compound which is asymmetric with respect to the central benzene ring and a phosphorescent emitting material. The compound provides an organic electroluminescence device with long lifetime and high current efficiency. | 2012-01-12 |
20120007060 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THIN FILM TRANSISTOR, DISPLAY DEVICE, AND ELECTRONIC EQUIPMENT - A thin film transistor includes a contact layer that contains an organic semiconductor material and an acceptor material or a donor material provided between an organic semiconductor layer and a source electrode/a drain electrode. | 2012-01-12 |
20120007061 | Luminescent Cyclometallated Iridium(III) Complexes Having Acetylide Ligands - The present invention relates to phosphorescent (triplet-emitting) organometallic materials. The phosphorescent materials of the present invention comprise Ir(III)cyclometallated alkynyl complexes for use as triplet light-emitting materials. The Ir(III)cyclometallated alkynyl complexes comprise at least one cyclometallating ligand and at least one alkynyl ligand bonded to the iridium. Also provided is an organic light emitting device comprising an anode, a cathode and an emissive layer between the anode and the cathode, wherein the emissive layer comprises a Ir(III)cyclometallated alkynyl complex as a triplet emitting material. | 2012-01-12 |
20120007062 | NOVEL LIQUID-CRYSTALLINE COMPOUND AND ORGANIC SEMICONDUCTOR DEVICE CONTAINING THE COMPOUND - Disclosed is a visible light-transmissive liquid-crystalline compound having good hole and electron-transport characteristics and useful as an organic semiconductor material. The compound is represented by a formula (1): | 2012-01-12 |
20120007063 | USE OF DIBENZOFURANS AND DIBENZOTHIOPHENES SUBSTITUTED BY NITROGEN-BONDED FIVE-MEMBERED HETEROCYCLIC RINGS IN ORGANIC ELECTRONICS - The present invention relates to the use of dibenzofurans and dibenzothiophenes which have at least one nitrogen-bonded five-membered heterocyclic ring as a substituent as host, blocker and/or charge transport material in organic electronics. The present invention further relates to dibenzofurans and dibenzothiophenes which comprise at least one nitrogen-bonded five-membered heterocyclic ring and at least one carbazolyl radical as substituents, to a process for preparation thereof, and to the use of these compounds in organic electronics. | 2012-01-12 |
20120007064 | ORGANIC ELECTROLUMINESCENT DEVICE AND METHOD FOR PREPARING THE SAME - The present invention relates to an organic electroluminescent device comprising a substrate, a cathode, at least three organic material layers comprising a light-emitting layer, and an anode in the sequentially laminated form, in which the organic material layers comprise an n-type organic material layer positioned between the cathode and the light-emitting layer; and an organic material layer comprising a compound having a functional group selected from the group consisting of an imidazole group, an oxazole group and a thiazole group between the cathode and the light-emitting layer. The organic electroluminescent device according to the present invention comprises an organic material layer comprising a compound having a functional group selected from the group consisting of an imidazole group, an oxazole group and a thiazole group between a cathode and a light-emitting layer, thus having an improved electron injection characteristic to provide an organic electroluminescent device of an inverted structure operating at a low voltage. | 2012-01-12 |
20120007065 | ORGANIC EL ELEMENT ARRAY - An organic EL element array is provided which can more easily be produced with a high aperture ratio and a high definition and in which light-emitting layers of organic EL elements adjacent to each other in an interpixel region mutually overlap in the interpixel region. | 2012-01-12 |
20120007066 | ANTHRACENE DERIVATIVE, MATERIAL FOR LIGHT EMITTING ELEMENT, LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND ELECTRONIC DEVICE - It is an object of the present invention to provide a novel material capable of realizing excellent color purity of blue, and a light emitting element and a light emitting device using the novel material. Further, it is an object of the present invention to provide which is highly reliable, and a light emitting element and a light emitting device using the novel material. The structure for solving the above problems in accordance with the present invention is an anthracene derivative simultaneously having a diphenylanthracene structure and a carbazole skeleton in a molecule as represented by structural formula (1): | 2012-01-12 |
20120007067 | ORGANIC ELECTROLUMINESCENT DEVICE, METHOD FOR MANUFACTURING ORGANIC ELECTROLUMINESCENT DEVICE, IMAGE DISPLAY DEVICE, AND METHOD FOR MANUFACTURING IMAGE DISPLAY DEVICE - Provided is an organic electroluminescent device including: a substrate ( | 2012-01-12 |
20120007068 | Light Emissive Device - An organic light emissive device comprising: a first electrode; a second electrode; and an organic light emissive region between the first and second electrodes comprising an organic light emissive material which has a peak emission wavelength, wherein at least one of the electrodes is transparent and comprises a composite of a charge injecting metal and another material which is codepositable with the charge injecting metal, the other material having a different refractive index to that of the charge injecting metal and wherein the other material has a lower degree of quenching at the peak emission wavelength than the charge injecting metal whereby quenching of excitons by the at least one electrode is reduced, the charge injecting metal comprising either a low work function metal having a work function of no more than 3.5 eV or a high work function metal having a work function of no less than 4.5 eV. | 2012-01-12 |
20120007069 | NOVEL NITROGEN-CONTAINING HETEROCYCLIC COMPOUND AND ORGANIC ELECTRONIC DEVICE USING THE SAME - The present invention provides a novel nitrogen-containing heterocyclic derivative and an organic electronic device using the same. The organic electronic device according to the present invention has excellent properties in terms of efficiency, driving voltage, and a life span. | 2012-01-12 |
20120007070 | ORGANIC ELECTROLUMINESCENT DEVICE - Provided is an organic electroluminescent device (organic EL device), which has improved luminous efficiency, shows sufficiently ensured driving stability, and has a simple construction. The organic electroluminescent device includes an anode, a cathode, and organic layers including a hole-transporting layer and a light-emitting layer, the organic layers being interposed between the anode and the cathode, in which the light-emitting layer contains a phosphorescent light-emitting material and the hole-transporting layer and the light-emitting layer have an electron- and/or exciton-blocking layer therebetween, the electron- and/or exciton-blocking layer being adjacent to the light-emitting layer and containing an indolocarbazole compound represented by the general formula (2). In the formula, a ring B represents a heterocycle represented by the formula (1c) to be fused with adjacent rings, Z represents an n-valent aromatic hydrocarbon group or an aromatic heterocyclic group, and n represents 1 or 2. | 2012-01-12 |
20120007071 | ORGANIC LIGHT-EMITTING DEVICE, AND METHOD FOR MANUFACTURING SAME - An exemplary embodiment of the present invention provides an organic light-emitting device, comprising: a first electrode; a second electrode; and a light emitting layer that is disposed between the first electrode and the second electrode, wherein the organic light-emitting device further comprises a first organic material layer that is contacted with the first electrode and a second organic material layer that is contacted with the second electrode, the first and the second organic material layers comprise a compound represented by Formula 1, and a third organic material layer comprising an n-type dopant between the second organic material layer contacted with the second electrode and the light emitting layer is included, and a method for manufacturing the same. | 2012-01-12 |
20120007072 | ORGANIC ELECTROLUMINESCENT ELEMENT - Disclosed is an organic electroluminescent element which can be produced by a wet process, has improved laminated structure, and also has improved external quantum efficiency and an improved service life. The organic electroluminescent element comprises at least an anode; a cathode and a laminated structure intercalated between the anode and the cathode, all of which are arranged on a substrate, wherein the laminated structure has at least four layers formed by a wet process, and wherein the layers produced by the wet process include at least a hole injection layer, a hole transport layer and a light-emitting layer. The organic electroluminescent element is characterized in that the hole injection layer comprises an electrically conductive polymer, the hole transport layer comprises a polymeric compound having a repeating unit represented by general formula (1), and the polymeric compound has a weight average molecular weight of 50,000 to 200,000 in terms of polystyrene content. | 2012-01-12 |
20120007073 | Semiconductor Wafer Constructions, And Methods For Quality Testing Material Removal Procedures During Semiconductor Fabrication Processes - Some embodiments include methods for quality testing material removal procedures. A test structure is formed to contain a pair of electrically conductive segments. The segments are the same relative to a detectable property as long as they are electrically connected, but becoming different relative to such property if they are disconnected from one another. A material is formed over the test structure, and across a region of a semiconductor substrate proximate to the test structure. The material is subjected to a procedure which removes at least some of it, and which fabricates a structure of an integrated circuit construction in the region proximate to the test structure. After the procedure, it is determined if the segments are the same relative to the detectable property. | 2012-01-12 |
20120007074 | THERMALLY SENSITIVE MATERIAL EMBEDDED IN THE SUBSTRATE - A structure and methods for using an integrated circuit structure comprise a substrate and circuitry connected to the substrate. The substrate includes a heat sensitive material that changes color when heated. The heat sensitive material has one of a plurality of colors depending upon a temperature to which the substrate was exposed. | 2012-01-12 |
20120007075 | SEMICONDUCTOR CHIP WITH BACKSIDE CONDUCTOR STRUCTURE - Various semiconductor devices and methods of testing such devices are disclosed. In one aspect, a method of manufacturing is provided that includes forming a bore from a backside of a semiconductor chip through a buried insulating layer and to a semiconductor device layer of the semiconductor chip. A conductor structure is formed in the bore to establish an electrically conductive pathway between the semiconductor device layer and the conductor structure. The conductor structure may provide a diagnostic pathway. | 2012-01-12 |
20120007076 | LIGHT EMITTING MODULE - Disclosed is a light emitting module capable of representing improved heat radiation and improved light collection. there is provided a light emitting module. The light emitting module includes a metallic circuit board formed therein with a cavity, and a light emitting device package including a nitride insulating substrate attached in the cavity of the metallic circuit board, at least one pad part on the nitride insulating substrate, and at least one light emitting device attached on the pad part. | 2012-01-12 |
20120007077 | SILICON DEVICE STRUCTURE, AND SPUTTERING TARGET USED FOR FORMING THE SAME - There is provided a silicon device structure, comprising: a P-doped n | 2012-01-12 |
20120007078 | SEMICONDUCTOR DEVICE - It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconductor film is formed over a substrate, and is heated. A thermal expansion coefficient of the substrate is 6×10 | 2012-01-12 |
20120007079 | Thin Film Field Effect Transistor with Dual Semiconductor Layers - A thin film field effect transistor is disclosed which provides improved time-based channel stability. The field effect transistor includes first and second disordered semiconductor layers separated by an insulator. In an embodiment a carrier injection terminal is provided in a thin semiconductor layer closest to the gate terminal. An electric field is established in the thin semiconductor layer. At sufficient field strength, the electric field extends into the second semiconductor layer, which is in contact with the source and drain terminals. At sufficient field strength a channel is established in the second semiconductor layer, permitting current to flow between source and drain terminals. Above a certain gate voltage, there is sufficient free charge is induced in the first semiconductor layer so that the field does not extend into the second semiconductor, effectively shutting off current between source and drain. Single-device transition detection (as well as other applications) may be obtained. | 2012-01-12 |
20120007080 | PIXEL STRUCTURE AND PIXEL STRUCTURE OF ORGANIC LIGHT EMITTING DEVICE - A pixel structure including a first scan line, a second scan line, a data line and a power line substantially perpendicular to the first scan line and the second scan line, a reference signal line and an emission signal line substantially parallel with the first scan line and the second scan line, a common thin film transistor (C-TFT), a first pixel unit, and a second pixel unit is provided. The common thin film transistor has a common gate electrode, a common source electrode and a common drain electrode. The common gate electrode is electrically connected to the first scan line, the common drain electrode is electrically connected to the reference signal line. The first and the second pixel units respectively have a first TFT, a second TFT, a third TFT, a fourth TFT, a fifth TFT, a sixth TFT, a capacitor, and an emission device. | 2012-01-12 |
20120007081 | ARRAY SUBSTRATE FOR DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An array substrate for a display device includes a substrate; gate and data lines crossing each other on the substrate to define a pixel region; a thin film transistor connected to the gate and data lines and including a gate electrode, a gate insulating layer on the gate electrode, an active layer on the gate insulating layer, an ohmic contact layer on the active layer, and source and drain electrodes on the ohmic contact layer; and a pixel electrode connected to the drain electrode, wherein the source and drain electrodes are separated from each other to define a separate region, wherein the separate region includes first to third regions in different directions, and wherein the active layer is removed in at least one of the first to third regions. | 2012-01-12 |
20120007082 | THIN FILM TRANSISTOR ARRAY PANEL - A thin film transistor array panel includes an insulating substrate, a plurality of pixel electrodes arranged on the insulating substrate in rows and columns, a plurality of thin film transistors connected with the plurality of pixel electrodes, respectively, and a plurality of gate lines and a plurality of data lines connected with the plurality of thin film transistors. When one data line and one pixel electrode which are connected with a single thin film transistor are referred to as a connected data line and a connected pixel electrode, respectively, the plurality of thin film transistors are positioned on a same side of the connected data line in two adjacent rows, and on alternating sides of the connected data line in every other two adjacent rows. Two boundary lines of the connected pixel electrode are overlapped with the connected data line. | 2012-01-12 |
20120007083 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME - An organic light-emitting display device and a method of manufacturing the organic light-emitting display device. A metal layer separated from a pixel electrode is formed without increasing the number of masks, thereby simplifying the pixel electrode and obtaining etching characteristics of a gate electrode. | 2012-01-12 |
20120007084 | DOUBLE GATE THIN-FILM TRANSISTOR AND OLED DISPLAY APPARATUS INCLUDING THE SAME - A double gate thin-film transistor (TFT), and an organic light-emitting diode (OLED) display apparatus including the double gate TFT, includes a double gate thin-film transistor (TFT) including: a first gate electrode on a substrate; an active layer on the first gate electrode; source and drain electrodes on the active layer; a planarization layer on the substrate and the source and drain electrodes, and having an opening corresponding to the active layer; and a second gate electrode in the opening. | 2012-01-12 |
20120007085 | ELECTRONIC DEVICE, METHOD OF ISOLATING ELEMENTS OF ELECTRONIC DEVICE, METHOD OF PRODUCING ELECTRONIC DEVICE, AND DISPLAY APPARATUS INCLUDING ELECTRONIC DEVICE - An electronic device includes: multiple electronic elements each including a semiconductor film; and an element isolation region provided between adjacent ones of the multiple electronic elements, the element isolation region including a semiconductor film having a bandgap of 1.95 eV or more, an insulating film, and an element isolation electrode, the element isolation electrode being an electrode which is separated from the semiconductor film of the element isolation region by the insulating film and is applied with a voltage so as to increase a resistance of the semiconductor film of the element isolation region, to thereby electrically isolate the multiple electronic elements from one another. | 2012-01-12 |
20120007086 | THIN FILM TRANSISTOR SUBSTRATE AND LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME - A thin film transistor substrate with an adhesive strength between a semiconductor layer and a source electrode, and between a semiconductor layer and a drain electrode; and an LCD device using the thin film transistor substrate. The thin film transistor substrate includes a substrate, a gate electrode on the substrate, a gate insulating film on the gate electrode, an active layer on the gate insulating film, an ohmic contact layer on the active layer, a barrier layer on the ohmic contact layer. The barrier layer is formed of a material layer containing Ge. A source electrode and a drain electrode are on the barrier layer. The source and drain electrodes are provided at a predetermined interval from each other. | 2012-01-12 |
20120007087 | METHOD FOR MANUFACTURING DISPLAY DEVICE - A first conductive film, a first insulating film, a semiconductor film, an impurity semiconductor film, a second conductive film, and a first resist mask are formed; first etching is performed to expose at least a surface of the first conductive film; second etching accompanied by side etching is performed on part of the first conductive film to form a gate electrode layer; a second resist mask is formed; third etching is performed to form a source and drain electrode layers, a source and drain regions, and a semiconductor layer; a second insulating film is formed; an opening portion is formed in the second insulating film to partially expose the source or drain electrode layer; a pixel electrode is selectively formed in the opening portion and over the second insulating film; and a supporting portion formed using the gate electrode layer is formed in a region overlapping with the opening portion. | 2012-01-12 |
20120007088 | THIN FILM TRANSISTOR ARRAY PANEL AND A METHOD FOR MANUFACTURING THE SAME - A thin film transistor array panel includes a substrate; a plurality of gate lines that are formed on the substrate; a plurality of data lines that intersect the gate lines; a plurality of thin film transistors that are connected to the gate lines and the data lines; a plurality of color filters that are formed on upper parts of the gate lines, the data lines, and the thin film transistors; a common electrode that is formed on the color filters and that includes a transparent conductor; a passivation layer that is formed on an upper part of the common electrode; and a plurality of pixel electrodes that are formed on an upper part of the passivation layer and that are connected to a drain electrode of each of the thin film transistors. | 2012-01-12 |
20120007089 | ARRAY SUBSTRATE AND DISPLAY DEVICE - In the array substrate where the display region has the non-quadrangle shape, a sub-capacitance line which forms a sub-capacitance is disposed at the pixel, a intersection region of the scanning lead-out line and a signal lead-out line is located at the frame region on the outside of the display region, a common lead-out line which connects the sub-capacitance line in common is disposed at the frame region side where the scanning lead-out line is disposed, the common lead-out line is not disposed in the intersection region, but disposed in a region between a region of the scanning lead-out line and a region of the signal lead-out line while intersecting any one of the scanning lead-out line and the signal lead-out line. | 2012-01-12 |
20120007090 | Area Sensor and Display Apparatus Provided With An Area Sensor - An area sensor of the present invention has a function of displaying an image in a sensor portion by using light-emitting elements and a reading function using photoelectric conversion devices. Therefore, an image read in the sensor portion can be displayed thereon without separately providing an electronic display on the area sensor. Furthermore, a photoelectric conversion layer of a photodiode according to the present invention is made of an amorphous silicon film and an N-type semiconductor layer and a P-type semiconductor layer are made of a polycrystalline silicon film. The amorphous silicon film is formed to be thicker than the polycrystalline silicon film. As a result, the photodiode according to the present invention can receive more light. | 2012-01-12 |
20120007091 | THIN FILM TRANSISTOR SUBSTRATE HAVING LOW RESISTANCE BUS LINE STRUCTURE AND METHOD FOR MANUFATURING THE SAME - A method for manufacturing a thin film transistor substrate including forming bus lines by etching a surface of a substrate to form bus line patterns and filling the bus line patterns with a bus line metal; forming a semiconductor channel layer at one portion of a pixel area defined by the bus lines; and forming source-drain electrodes on the semiconductor channel layer, a pixel electrode extending from the drain electrode within the pixel area, and a common electrode parallel with the pixel electrode. The bus lines are formed as being thicker but the bus lines are buried in the substrate so that the line resistance can be reduced and the step difference due to the thickness of bus line does not affect the device. | 2012-01-12 |
20120007092 | Method for Manufacturing Thin Film Transistor, and Thin Film Transistor - Disclosed is a method for manufacturing a thin film transistor in which a semiconductor film in a channel portion is provided between a source electrode and a drain electrode, wherein a partition layer (a bank) can be appropriately formed. The method comprises the steps of: forming two underlying electrodes on an underlying layer; forming a partition layer on the surface of the underlying layer containing the two underlying electrodes so as to surround an area where the source electrode and the drain electrode are to be formed; forming the source electrode and the drain electrode by a plating method on the surfaces of the two underlying electrodes, which are surrounded by the partition layer; and applying semiconductor solution, in which a semiconductor material is dissolved or dispersed, to the area surrounded by the partition layer so that a semiconductor film is formed in the area. | 2012-01-12 |
20120007093 | TRANSISTOR STRUCTURE AND LIGHT EMITTING APPARATUS - Disclosed is a transistor structure including: a first thin film transistor including, a first gate electrode; a first insulating film which covers the first gate electrode; and a first semiconductor film formed on the first insulating film in a position corresponding to the first gate electrode; and a second thin film transistor including, a second semiconductor film formed on the first insulating film; a second insulating film which covers the second semiconductor film; and a second gate electrode formed in a position corresponding to a channel portion of the second semiconductor film on the second insulating film, wherein the first semiconductor film and the second semiconductor film include a first portion on the first insulating film side and a second portion on the opposite surface side, and one of the first portion or the second portion has a higher degree of crystallization of silicon compared to the other. | 2012-01-12 |
20120007094 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A semiconductor device includes a thin film transistor. The thin film transistor includes a semiconductor film over a substrate, in which the semiconductor film includes a pair of first regions, a pair of second regions interposed between the pair of first regions, and a channel formation region interposed between the pair of second regions. A concentration of an impurity in the pair of second regions is smaller than a concentration of the impurity in the pair of first regions. The thin film transistor includes an insulating film, in which a portion of the insulating film is provided over the semiconductor film. The thin film transistor includes a conductive film over the portion, and the conductive film includes a taper shape. | 2012-01-12 |
20120007095 | SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF - This invention provides a semiconductor device having high operation performance and high reliability. An LDD region | 2012-01-12 |
20120007096 | ID CHIP AND IC CARD - The present invention provides an ID chip or an IC card in which the mechanical strength of an integrated circuit can be enhanced without suppressing a circuit scale. An ID chip or an IC card of the present invention has an integrated circuit in which a TFT (a thin film transistor) is formed from an insulated thin semiconductor film. Further, an ID chip or an IC card of the present invention has a light-emitting element and a light-receiving element each using a non-single-crystal thin film for a layer conducting photoelectric conversion. Such a light-emitting element or a light-receiving element may be formed consecutively to (integrally with) an integrated circuit or may be formed separately and attached to an integrated circuit. | 2012-01-12 |