02nd week of 2014 patent applcation highlights part 8 |
Patent application number | Title | Published |
20140008550 | Scintillators And Applications Thereof - Scintillators of various constructions and methods of making and using the same are provided. In some embodiments, a scintillator comprises at least one radiation absorption region and at least one spatially discrete radiative exciton recombination region. | 2014-01-09 |
20140008551 | DETECTION OF EMISSION RADIATION OF UV LIGHT EMITTING DIODE BY STRUCTURALLY IDENTICAL UV LIGHT RECEIVING DIODE - A UV light emitting diode (UV-LED) is arranged in a weathering chamber and a UV light receiving diode, which is constructed on the same material basis as the UV LED, is arranged relative to the UV LED in such a way that a portion of the radiation emitted by the UV LED impinges on the UV light receiving diode during the operation of the device. | 2014-01-09 |
20140008552 | TARGET SUPPLY APPARATUS, CHAMBER, AND EXTREME ULTRAVIOLET LIGHT GENERATION APPARATUS - A target supply apparatus mounted in a chamber in which extreme ultraviolet light is generated by introducing a target material and a laser beam into the chamber may include a target generator having a nozzle, a first pipe configured to cover the nozzle, a cover opening provided in the first pipe to allow the target material to pass through the first pipe, and a first valve configured to open and close the cover opening. | 2014-01-09 |
20140008553 | Frequency Tunable Wire Lasers - The present invention provides frequency tunable solid-state radiation-generating devices, such as lasers and amplifiers, whose active medium has a size in at least one transverse dimension (e.g., its width) that is much smaller than the wavelength of radiation generated and/or amplified within the active medium. In such devices, a fraction of radiation travels as an evanescent propagating mode outside the active medium. It has been discovered that in such devices the radiation frequency can be tuned by the interaction of a tuning mechanism with the propagating evanescent mode. | 2014-01-09 |
20140008558 | VALVE - A valve comprising a drive part having a valve block with at least one outlet opening; a valve part having a tappet that can be moved by a drive, wherein the tappet opens or closes the outlet opening depending on its position; and a spring that is disposed between the valve block and the tappet. | 2014-01-09 |
20140008559 | MESOFLUIDIC DIGITAL VALVE - A mesofluidic scale digital valve includes a valve body including a bore aligned along a longitudinal axis, a solenoid disposed substantially adjacent to the valve body and extending along the longitudinal axis, a poppet carried within the bore and configured to translate a fixed distance in response to a magnetic field generated by the solenoid, an orifice carried within valve body and configured to cooperate with the poppet in response to the magnetic field generated by the solenoid, and a bias element carried within the valve body and configured to encourage the poppet to engage the orifice to form a seal. | 2014-01-09 |
20140008564 | MAGNETIC FILTRATION PROCESS, MAGNETIC FILTERING MATERIAL, AND METHODS OF FORMING MAGNETIC FILTERING MATERIAL - The present invention provides magnetically responsive activated carbon, and a method of forming magnetically responsive activated carbon. The method of forming magnetically responsive activated carbon typically includes providing activated carbon in a solution containing ions of ferrite forming elements, wherein at least one of the ferrite forming elements has an oxidation state of +3 and at least a second of the ferrite forming elements has an oxidation state of +2, and increasing pH of the solution to precipitate particles of ferrite that bond to the activated carbon, wherein the activated carbon having the ferrite particles bonded thereto have a positive magnetic susceptibility. The present invention also provides a method of filtering waste water using magnetic activated carbon. | 2014-01-09 |
20140008565 | BINARY COMPOSITIONS OF 2,3,3,3-TETRAFLUOROPROPENE AND OF AMMONIA - A binary composition of 2,3,3,3-tetrafluoropropene and of ammonia, and also to the use thereof, in particular as a heat transfer fluid. | 2014-01-09 |
20140008572 | POLYMERIZABLE COMPOUND, LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - The compound represented by formula (1). | 2014-01-09 |
20140008573 | COMPOUNDS HAVING A C-C TRIPLE BOND - The present invention relates to compounds containing at least one C—C triple bond within a chain of at least 3 ring systems which have positive dielectric anisotropy, to the use thereof for high-frequency components, to liquid-crystalline media comprising the compounds, and to high-frequency components, in particular antennae, especially for the gigahertz region, comprising these media. The liquid-crystalline media serve, for example, for the phase shifting of microwaves for tuneable ‘phased-array’ antennae. | 2014-01-09 |
20140008574 | LIQUID CRYSTAL DISPLAY AND METHOD OF MANUFACTURING THE SAME - A liquid crystal display includes a first substrate, a second substrate, and a liquid crystal layer. The first substrate includes a first insulating substrate, in which a pixel area is defined, a gate line formed on the first insulating substrate, a data line crossing the gate line, and a thin film transistor connected to the gate line and the data line. The second substrate is opposite to the first substrate. The liquid crystal layer is interposed between the first and second substrates and includes a liquid crystal composition with a nematic-isotropic phase transition temperature (Tni) of 79° C. or above. | 2014-01-09 |
20140008575 | MESOGENIC COMPOUNDS, LIQUID CRYSTAL MEDIA AND COMPONENTS FOR HIGH FREQUENCY TECHNOLOGY - The present invention relates to a liquid-crystal medium which comprises a component A which consists of one or more compounds of the formula IA | 2014-01-09 |
20140008576 | USE OF LANTHANIDE COMPLEXES FOR OPTICAL MARKING OF PRODUCTS - At least one lanthanide complex for optical marking of products, compositions for optical marking of products, and an optical marking method including an application step of these compositions. | 2014-01-09 |
20140008577 | Method of Recovering Aqueous N-Methylmorpholine-N-Oxide Solution Used in Production of Lyocell Fiber - A method of recovering aqueous N-Methylmorpholine-N-Oxide solution used in production of Lyocell fiber comprises following steps. Bleach means for decoloring coloration in aqueous NMMO solution via alternate blow-mixing adsorption mode and static suspending adsorption mode reiteration. Filtration means for purifying the activated carbon powder and impurities by two filtering stages of first coarse filtering stage and second fine filtering stage. Concentration means for intensifying aqueous NMMO solution to obtain a condensed aqueous solution without NMMO solvent and a concentrated aqueous solution with NMMO solvent respectively by a sequential multi-stage evaporating system. Refinement means for purifying aqueous NMMO solution with promoting purity of concentrated aqueous solution to obtain required recovered aqueous solution by adding suitable agents in the redox reactions involved. Owing to streamlining and simplicity, the method not only has better competitiveness from promoted recovery cost, efficiency and quality but also meets regulations of environmental protection. | 2014-01-09 |
20140008596 | RAILING SUPPORT POST WITH THREADED RECEIVERS - A railing support post with threaded holes or receivers for receiving threaded hardware, such as might be used for tensioned cable railing. A decorative sleeve or post cover may be used to at least partially enclose the railing support post. The railing support post may be manufactured, for example, by providing an elongated member of a prescribed length, drilling a plurality of holes spaced along the length of the elongated member, and tapping the plurality of holes to form a plurality of threaded receivers. The threaded receivers are configured to receiver rail fittings or other fittings. | 2014-01-09 |
20140008597 | RAILING SYSTEM AND TENSIONED POSTS USED THEREIN - One or more posts of a railing system are held securely in place by a hidden tensioning cable that extends through a cavity of the post along a longitudinal axis and is tensioned to securely fasten the post securely to a surface of a structure. Placement of the tensioning cable through the cavity allows cable receivers to be placed at desired spacing in one or more receiver channels of the post, the cable receivers operable to receive cable rails of the railing system. The receiver channels are oriented transverse the longitudinal axis of the post and are each configured to receive a receiver in to which a cable assembly may be placed. This abstract is not to be considered limiting. | 2014-01-09 |
20140008600 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element capable of simultaneously satisfying the number of repeating operation times and a low-voltage operation characteristic which are in a tradeoff relation is provided. The memory element has a high-resistivity layer and an ion source layer between a bottom electrode and a top electrode. The high-resistivity layer is made of an oxide containing Te. Any of elements other than Te such as Al, Zr, Ta, Hf, Si, Ge, Ni, Co, Cu, and Au may be added. In the case of adding Al to Te and also adding Cu and Zr, the composition ratio of the high-resistivity layer is preferably adjusted in the ranges of 30≦Te≦100 atomic %, 0≦Al ≦70 atomic %, and 0≦Cu+Zr≦36 atomic % except for oxygen. The ion source layer is made of at least one kind of metal elements and at least one kind of chalcogen elements of Te, S, and Se. | 2014-01-09 |
20140008601 | ORGANIC MOLECULAR MEMORY - An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the first conductive layer and the second conductive layer, the organic molecular layer including variable-resistance molecular chains or charge-storage molecular chains, the variable-resistance molecular chains or the charge-storage molecular chains having electron-withdrawing substituents. | 2014-01-09 |
20140008602 | THERMAL ISOLATION IN MEMORY CELLS - Thermal isolation in memory cells is described herein. A number of embodiments include a storage element, a selector device formed in series with the storage element, and an electrode between the storage element and the selector device, wherein the electrode comprises an electrode material having a thermal conductivity of less than 0.15 Watts per Kelvin-centimeter (W/K-cm). | 2014-01-09 |
20140008603 | NONVOLATILE MEMORY DEVICE - A nonvolatile memory device has a memory cell including a resistance change layer, a first electrode, and a second electrode. The resistance change layer switches between high and low resistance states due to the transfer of metal ions from the first electrode in response to voltages applied between the electrodes. The first electrode is formed on a first side of the resistance change layer, and provides metal ions. The second electrode is formed on a second side of the resistance change layer. A memory cell region is formed between the first electrode and the second electrode with the resistance change layer. The memory device also includes a high permittivity layer with a higher dielectric constant than the resistance change layer. | 2014-01-09 |
20140008608 | SEMICONDUCTOR LIGHT-EMITTING DEVICES INCLUDING CONTACT LAYERS TO FORM REFLECTIVE ELECTRODES - A semiconductor light-emitting device includes a contact layer. The contact layer has the composition ratio of Al elements which varies gradually therein. A region formed by an Al element in the contact layer of the semiconductor light-emitting device may improve light extraction efficiency of the light emitted from an active layer and facilitate a formation of the reflective electrode. | 2014-01-09 |
20140008609 | LIGHT EMITTING DEVICE WITH NANOROD THEREIN AND THE FORMING METHOD THEREOF - A method of fabricating a light emitting device, comprising: providing a substrate; forming an undoped semiconductor layer on the substrate; forming a patterned metal layer on the undoped semiconductor layer; using the patterned metal layer as a mask to etch the undoped semiconductor layer and forming a plurality of nanorods on the substrate; and forming an light emitting stack on the plurality of nanorods to form a plurality of voids between the light emitting stack and the plurality of nanorods. | 2014-01-09 |
20140008612 | Coupled Asymmetric Quantum Confinement Structures - Implementations and techniques for coupled asymmetric quantum confinement structures are generally disclosed. | 2014-01-09 |
20140008613 | STACKED SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - A stacked semiconductor device and an associated manufacturing method are disclosed. A first semiconductor unit having a first surface, which is defined as being not a polar plane, is provided. At least one pit is formed on the first surface, and the pit has a second surface that lies at an angle relative to the first surface. A polarization enhanced tunnel junction is formed on the second surface, and a second semiconductor unit is formed above the tunnel junction. | 2014-01-09 |
20140008616 | TRANSISTOR DEVICE AND MATERIALS FOR MAKING - This application relates to graphene based heterostructures and transistor devices comprising graphene. The hetero-structures comprise i) a first graphene layer; ii) a spacer layer and iii) a third graphene. The transistors comprise (i) an electrode, the electrode comprising a graphene layer, and (ii) an insulating barrier layer. | 2014-01-09 |
20140008617 | NOVEL SILYLATED METAL COMPLEXES - Novel metal complexes containing silyl substitution are provided. Depending on the location of the substitution, compounds that emit in the yellow or green portions of the spectrum can be produced. These compounds are useful as components of OLED devices. | 2014-01-09 |
20140008620 | ORGANIC ELECTROLUMINESCENT DEVICES - [It is an object] to provide an organic electroluminescent element having a transparent electrode, with which there is no need to produce a separate light extraction layer, [which can be produced by] a simple film formation process, and which is advantageous in terms of cost. [This is] an organic electroluminescent element in which a substrate, a first transparent electrode that is adjacent to this substrate, an organic layer including at least one organic light-emitting layer, a second transparent electrode, a low refractive-index layer with a refractive index of 1.3 or less, and a reflector layer are formed in this order, with this organic electroluminescent element being such that the aforementioned first transparent electrode contains at least one type of transparent particle with a primary particle size of 0.5 μm or more. | 2014-01-09 |
20140008621 | ORGANIC ELECTROLUMINESCENT DEVICES - An organic electroluminescent element that includes a light-emitting layer composed of a light-emitting composition containing at least one type of host material and at least one type of light-emitting material is provided. The host material is a fluorescent anthracene derivative, which fluoresces blue light under DC current with a current density of 25 mA/cm | 2014-01-09 |
20140008622 | HOLE TRANSPORT POLYMERIC COMPOUND AND POLYMER LIGHT EMITTING DIODE USING THE SAME - A hole transport polymeric compound and a polymer light emitting diode using the same. The hole transport polymeric compound includes a hole transport material, a thermal cross-linking agent containing an ethynyl group, and a compound represented by [Formula 1], and can be applied to a polymer light emitting diode. In addition, the hole transport polymeric compound has excellent hole transport capabilities and has stability in solvents so as to be insoluble in a solvent used upon stacking other organic layers and blocking electrons well. | 2014-01-09 |
20140008623 | Optoelectronic Component and Use of a Copper Complex in a Charge Generation Layer Sequence - Different embodiments of the optoelectronic component have an organic layer structure for isolating charge carriers of a first charge carrier type and charge carriers of a second charge carrier type. The organic layer structure comprises a copper complex which has at least one ligand with the chemical structure as per a formula (I). In this formula, E1 and E2 are each one of the following elements independently of one another: oxygen, sulphur or selenium. R is chosen from the group comprising: hydrogen or substituted or unsubstituted, branched, linear or cyclic hydrocarbons. | 2014-01-09 |
20140008626 | CURABLE COMPOSITION, CURED PRODUCT, AND ORGANIC ELECTROLUMINESCENT ELEMENT USING SAME - Provided are a curable composition for an organic electroluminescent element, which has high light emission efficiency and is applicable to a wet process, a cured product thereof, and an organic electroluminescent element containing the cured product in an organic layer. More specifically, provided are a curable composition containing a compound represented by an indolocarbazole skeleton compound, a cured product obtained by curing the curable composition, and an organic electroluminescent element containing the cured product in an organic layer. | 2014-01-09 |
20140008627 | ORGANIC EL DEVICE AND METHOD OF MANUFACTURING ORGANIC EL DEVICE - A method of manufacturing an organic EL device includes: irradiating a light-emitting region of the organic EL device which includes a defective portion with a laser beam under a first irradiation condition; observing a state of an irradiation mark formed in the light-emitting region through the irradiation with the laser beam in the irradiating under a first irradiation condition; determining a second irradiation condition for resolving a defect caused by the defective portion, based on the first irradiation condition and the observed state of the irradiation mark; and irradiating the light-emitting region with a laser beam under the second irradiation condition determined in the determining of a second irradiation condition. | 2014-01-09 |
20140008628 | ORGANIC ELECTROLUMINESCENCE DEVICE - An organic EL device includes a metal layer which is provided with a nano-order-sized unevenness on one surface and plural organic layers which include a light emitting layer provided on the one surface side of the metal layer, and a height of each unevenness at respective interfaces in the organic layer is made smaller than an unevenness provided on the metal layer. According to the above configuration, the unevenness on one surface of the metal layer changes a surface plasmon to a propagation light and a light loss can be suppressed, and moreover, each unevenness of respective interfaces of the respective organic layers is made smaller than the unevenness on the surface of the metal layer, so that a short circuit inside the device can be suppressed. | 2014-01-09 |
20140008629 | ORGANIC ELECTROLUMINESCENT ELEMENT - An organic electroluminescent element in accordance with the present invention includes: a transparent electrode; a blue light-emitting layer containing a blue light-emitting material having a maximum emission wavelength 460 nm or less; a first green light-emitting layer containing a first green light-emitting material having a maximum emission wavelength in the spectrum between 460 nm and 610 nm; a red light-emitting layer containing a red light-emitting material having a maximum emission wavelength of 610 run or more; a second green light-emitting layer containing a second green light-emitting material having a maximum emission wavelength in the spectrum between 460 nm and 610 nm; and a reflecting electrode. The maximum emission wavelength of the first green light-emitting material is located on a short wavelength side of the spectrum. The maximum emission wavelength of the second green light-emitting material is located on a long wavelength side of the spectrum. | 2014-01-09 |
20140008630 | ORGANIC ELECTROLUMINESCENT ELEMENT - The organic electroluminescent element which is designed to emit white light in a range of a low color temperature to a high color temperature that is important for an illumination light source with a minor design change, and, moreover, has high color rendering property especially in an average color rendering index Ra and a special color rendering index R9 for red, while being highly efficient and long-life is obtained. The organic electroluminescent element includes: a transparent electrode; a first light-emitting unit including blue and green fluorescent light-emitting layers; an intermediate layer; a second light-emitting unit including red and green phosphorescent light-emitting layers; and a reflecting electrode. The first and second light-emitting units are stacked and the intermediate layer is interposed therebetween. The first light-emitting unit is designed to emit light by use of a phenomenon that a singlet exciton is generated by collision and fusion of two triplet excitons. | 2014-01-09 |
20140008631 | ORGANIC ELECTROLUMINESCENT ELEMENT - The present invention proposes a white organic electroluminescent element which is a multiunit element capable of emitting high intensity light that is important to a light source for lighting use, and can have an extended lifetime while suppressing deterioration in luminance. The organic electroluminescent element includes: a transparent electrode; and a first light-emitting unit including a blue fluorescent light-emitting layer containing a blue fluorescent light-emitting material; an intermediate layer; and a second light-emitting unit including a red phosphorescent light-emitting layer containing a red phosphorescent light-emitting material and a green phosphorescent light-emitting layer containing a green phosphorescent light-emitting material; and a reflecting electrode, wherein: the first and second light-emitting units are stacked having the intermediate layer interposed therebetween; and a film thickness (tR) of the red phosphorescent light-emitting layer and a film thickness (tG) of the green phosphorescent light-emitting layer satisfy a relation of 5*tR≦tG. | 2014-01-09 |
20140008636 | ORGANIC ELECTROLUMINESCENCE DEVICE - There is provided an organic electroluminescence device including: first and second electrode layers; a light-emitting layer | 2014-01-09 |
20140008637 | ELECTROLUMINESCENT COMPOSITION AND ELECTRIC DEVICE WITH HIGH BRIGHTNESS - The present invention is to provide a composition that can provide an electroluminescent device emitting light with high brightness. The present invention provides following: a composition including a polymer compound comprising one or more structural unit(s) selected from the group consisting of a structural unit represented by Formula (1), a structural unit represented by Formula (3), a structural unit represented by Formula (5), a structural unit represented by Formula (16), a structural unit represented by Formula (18), a structural unit represented by Formula (20), and a structural unit represented by Formula (22) and an ionic compound represented by Formula (23); an organic film and an electric device comprising the composition. | 2014-01-09 |
20140008644 | OXYGEN ENGINEERED SINGLE-CRYSTAL REO TEMPLATE - A method of forming a template on a silicon substrate includes epitaxially growing a template of single crystal ternary rare earth oxide on a silicon substrate and epitaxially growing a single crystal semiconductor active layer on the template. The active layer has either a cubic or a hexagonal crystal structure. During the epitaxial growth of the template, a partial pressure of oxygen is selected and a ratio of metals included in the ternary rare earth oxide is selected to match crystal spacing and structure of the template at a lower interface to the substrate and to match crystal spacing and structure of the template at an upper interface to crystal spacing and structure of the semiconductor active layer. A high oxygen partial pressure during growth of the template produces a stabilized cubic crystal structure and a low oxygen partial pressure produces a predominant peak with a hexagonal crystal structure. | 2014-01-09 |
20140008645 | THIN FILM TRANSISTOR SUBSTRATE HAVING METAL OXIDE AND METHOD FOR MANUFACTURING - A thin film transistor substrate and a method for manufacturing the same are disclosed. The thin film transistor substrate includes a gate electrode disposed on a substrate, a gate insulating film disposed on the gate electrode, an active layer disposed on the gate insulating film and including metal oxide, a source electrode contacted with one side of the active layer and a pixel electrode contacted with the other side of the active layer; and an etch stopper interposed between the source electrode and the pixel electrode. | 2014-01-09 |
20140008646 | TRANSISTOR AND MANUFACTURING METHOD THEREOF - A transistor and a manufacturing method thereof are provided. The transistor includes a first gate, a second gate disposed on one side of the first gate, a first semiconductor layer, a second semiconductor layer, an oxide layer, a first insulation layer, a second insulation layer, a source, and a drain. The first semiconductor layer is disposed between the first and second gates; the second semiconductor layer is disposed between the first semiconductor layer and the second gate. The oxide layer is disposed between the first semiconductor layer and the second semiconductor layer. The first insulation layer is disposed between the first gate and the first semiconductor layer; the second insulation layer is disposed between the second gate and the second semiconductor layer. The source and the drain are disposed between the first insulation layer and the second insulation layer and respectively disposed on opposite sides of the oxide layer. | 2014-01-09 |
20140008647 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The electrical characteristics of a transistor including an oxide semiconductor layer are varied by influence of an insulating film in contact with the oxide semiconductor layer, that is, by an interface state between the oxide semiconductor layer and the insulating film. A first oxide semiconductor layer S | 2014-01-09 |
20140008650 | THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - Provided are a thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer and a method of fabricating the same. The thin film transistor in which an oxide semiconductor combined with a nitride containing boron or aluminum is applied to a channel layer exhibits significantly improved mobility and increased stability at a high temperature. | 2014-01-09 |
20140008651 | DUAL ACTIVE LAYERS FOR SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME - Some embodiments include dual active layers for semiconductor devices. Other embodiments of related devices and methods are also disclosed. | 2014-01-09 |
20140008652 | THROUGH-SUBSTRATE VIA STRUCTURE - A through-substrate via structure including a substrate, a conductive layer, and a parasitic capacitance modulation layer is provided. The substrate has at least one opening. The opening is filled with the conductive layer. The parasitic capacitance modulation layer is disposed between the conductive layer and the substrate. The parasitic capacitance modulation layer is placed around the through-substrate via to reduce the depletion capacitance and further reduce the parasitic capacitance of the through-substrate via. Therefore, during transmission of signals with high frequency, the parasitic capacitance around the through-substrate via is rather small and thereby the operation speed of devices is increased. | 2014-01-09 |
20140008653 | MULTI-WAVE BAND LIGHT SENSOR COMBINED WITH FUNCTION OF IR SENSING AND METHOD OF FABRICATING THE SAME - Provided is a multi-wave band light sensor combined with a function of infrared ray (IR) sensing including a substrate, an IR sensing structure, a dielectric layer, and a multi-wave band light sensing structure. The substrate includes a first region and a second region. The IR sensing structure is in the substrate for sensing IR. The dielectric layer is on the IR sensing structure. The multi-wave band light sensing structure includes a first wave band light sensor, a second wave band light sensor, and a third wave band light sensor. The second wave band light sensor and the first wave band light sensor are overlapped and disposed on the IR sensing structure on the first region of the substrate from the bottom up. The third wave band light sensor is in the dielectric layer of the second region. | 2014-01-09 |
20140008654 | PIXEL STRUCTURE OF DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a pixel structure of a display panel and a method for manufacturing the same. The pixel structure comprises a first pixel area and a second pixel area that are adjacent to each other. The first pixel area has a first transparent conductive layer disposed therein and the second pixel area has a second transparent conductive layer disposed therein. The first transparent conductive layer in the first pixel area and the second transparent conductive layer in the second pixel area are located at different heights. The pixel structure of the present invention can efficiently increase an aperture ratio for the pixels on the display panel. | 2014-01-09 |
20140008655 | PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF - A pixel structure and a manufacturing method of the pixel structure are provided. The pixel structure includes a substrate, a transistor, a planarizing layer, a plurality of contact windows, and a pixel electrode layer. The transistor is disposed on the substrate and includes a gate, a source, and a drain. The planarizing layer is disposed on the gate, the source, and a portion of the drain. The contact windows penetrate the planarizing layer and expose another portion of the drain. The pixel electrode layer is disposed on the planarizing layer, on the another portion of the drain, and in the contact windows and is electrically connected to the drain. | 2014-01-09 |
20140008660 | MATERIALS, STRUCTURES, AND METHODS FOR OPTICAL AND ELECTRICAL III-NITRIDE SEMICONDUCTOR DEVICES - The present invention provides materials, structures, and methods for III-nitride-based devices, including epitaxial and non-epitaxial structures useful for III-nitride devices including light emitting devices, laser diodes, transistors, detectors, sensors, and the like. In some embodiments, the present invention provides metallo-semiconductor and/or metallo-dielectric devices, structures, materials and methods of forming metallo-semiconductor and/or metallo-dielectric material structures for use in semiconductor devices, and more particularly for use in III-nitride based semiconductor devices. In some embodiments, the present invention includes materials, structures, and methods for improving the crystal quality of epitaxial materials grown on non-native substrates. In some embodiments, the present invention provides materials, structures, devices, and methods for acoustic wave devices and technology, including epitaxial and non-epitaxial piezoelectric materials and structures useful for acoustic wave devices. In some embodiments, the present invention provides metal-base transistor devices, structures, materials and methods of forming metal-base transistor material structures for use in semiconductor devices. | 2014-01-09 |
20140008661 | NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE - A nitride-based compound semiconductor device includes a substrate, a first nitride-based compound semiconductor layer that is formed above the substrate with a buffer layer interposed between them, a second nitride-based compound semiconductor layer that is formed on the first nitride-based compound semiconductor layer and that has a larger band gap than a band gap of the first nitride-based compound semiconductor layer, and an electrode that is formed on the second nitride-based compound semiconductor layer. The second nitride-based compound semiconductor layer has a region in which carbon is doped near a surface of the second nitride-based compound semiconductor layer. | 2014-01-09 |
20140008662 | PHOTOVOLTAIC DEVICES INCLUDING HETEROJUNCTIONS - A photovoltaic cell including a first semiconductor layer that includes a III-V compound semiconductor, the first semiconductor layer positioned over a transparent conductive layer, and a second semiconductor layer that includes a II-VI compound semiconductor, the second semiconductor layer positioned between the first semiconductor layer and a back metal contact. The photovoltaic cell further includes an interfacial layer between the first and second semiconductor layers that enhances a rectifying junction formed between the III-V and II-VI compound semiconductor materials. | 2014-01-09 |
20140008663 | Integrated Composite Group III-V and Group IV Semiconductor Device - According to one disclosed embodiment, a method for fabricating a monolithic integrated composite device comprises forming a group III-V semiconductor body over a group IV semiconductor substrate, forming a trench in the group III-V semiconductor body, and forming a group IV semiconductor body in the trench. The method also comprises fabricating at least one group IV semiconductor device in the group IV semiconductor body, and fabricating at least one group III-V semiconductor device in the group III-V semiconductor body. In one embodiment, the method further comprises planarizing an upper surface of the III-V semiconductor body and an upper surface of the group IV semiconductor body to render those respective upper surfaces substantially co-planar. In one embodiment, the method further comprises fabricating at least one passive device in a defective region of said group IV semiconductor body adjacent to a sidewall of the trench. | 2014-01-09 |
20140008666 | SILICON CARBIDE VERTICAL FIELD EFFECT TRANSISTOR - A silicon carbide vertical field effect transistor includes a first-conductive-type silicon carbide substrate; a low-concentration first-conductive-type silicon carbide layer formed on a surface of the first-conductive-type silicon carbide substrate; second-conductive-type regions selectively formed on a surface of the first-conductive-type silicon carbide layer; first-conductive-type source regions formed in the second-conductive-type regions; a high-concentration second-conductive-type region formed between the first-conductive-type source regions in the second-conductive-type region; a source electrode electrically connected to the high-concentration second-conductive-type region and a first-conductive-type source region; a gate insulating film formed from the first-conductive-type source regions formed in adjacent second-conductive-type regions, onto the second-conductive-type regions and the first-conductive-type silicon carbide layer; a gate electrode formed on the gate insulating film; and a drain electrode on the back side of the first-conductive-type silicon carbide substrate, wherein an avalanche generating unit is disposed between the second-conductive-type region and the first-conductive-type silicon carbide layer. | 2014-01-09 |
20140008667 | METHOD FOR MANUFACTURING A MONOLITHIC LED MICRO-DISPLAY ON AN ACTIVE MATRIX PANEL USING FLIP-CHIP TECHNOLOGY AND DISPLAY APPARATUS HAVING THE MONOLITHIC LED MICRO-DISPLAY - A high-resolution, Active Matrix (AM) programmed monolithic Light Emitting Diode (LED) micro-array is fabricated using flip-chip technology. The fabrication process includes fabrications of an LED micro-array and an AM panel, and combining the resulting LED micro-array and AM panel using the flip-chip technology. The LED micro-array is grown and fabricated on a sapphire substrate and the AM panel can be fabricated using CMOS process. LED pixels in a same row share a common N-bus line that is connected to the ground of AM panel while p-electrodes of the LED pixels are electrically separated such that each p-electrode is independently connected to an output of drive circuits mounted on the AM panel. The LED micro-array is flip-chip bonded to the AM panel so that the AM panel controls the LED pixels individually and the LED pixels exhibit excellent emission uniformity. According to this constitution, incompatibility between the LED process and the CMOS process can be eliminated. | 2014-01-09 |
20140008668 | LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - To provide a method for fabricating a light-emitting device using flexible glass which is capable of withstanding a process temperature higher than or equal to 500° C., and the light-emitting device. A second substrate is attached to a support substrate using an adsorption layer. The second substrate is bonded to a backplane substrate provided with a transistor and a light-emitting element. The backplane substrate includes a separation layer and a buffer layer. A first substrate is separated from the backplane substrate by separation between the separation layer and the buffer layer. A flexible third substrate is bonded, using a second adhesive layer, to a surface of the buffer layer exposed by the separation. The support substrate is separated from the second substrate by separation between the second substrate and the adsorption layer. | 2014-01-09 |
20140008669 | PARALLEL PLATE SLOT EMISSION ARRAY - Parallel plate slot emission array. In accordance with an embodiment of the present invention, an article of manufacture includes a side-emitting light emitting diode configured to emit light from more than two surfaces. The article of manufacture includes a first sheet electrically and thermally coupled to a first side of the light emitting diode, and a second sheet electrically and thermally coupled to a second side of the light emitting diode. The article of manufacture further includes a plurality of reflective surfaces configured to reflect light from all of the surfaces of the light emitting diode through holes in the first sheet. The light may be reflected via total internal reflection. | 2014-01-09 |
20140008672 | LIGHT EMITTING DEVICE - A light emitting device, having: a first light emitting element and a second light emitting element; and a resin package equipped with an opening having a reflective wall that widens toward the upper face, the opening comprises at least first and second curved parts having different radiuses at the resin package upper face, and the radius of the first curved part disposed near the first light emitting element is greater than the radius of the second curved part disposed near the second light emitting element. | 2014-01-09 |
20140008673 | LIGHT EMITTING APPARATUS AND SURFACE LIGHT SOURCE APPARATUS HAVING THE SAME - Provided are a light emitting apparatus and a surface light source apparatus having the same. The light emitting apparatus comprises a package body, a first color light emitting part in a first cavity of the package body, and a second color light emitting part in a second cavity of the package body. The package body comprises a plurality of cavities. | 2014-01-09 |
20140008674 | MOUNTING SUBSTRATE AND OPTICAL UNIT - A mounting substrate includes: a wiring substrate; and a plurality of optical elements mounted on a mounting surface of the wiring substrate, and each having a first electrode and a second electrode. The wiring substrate includes a support substrate, a plurality of first wires, and a plurality of second wires. The first wires and the second wires are provided within a layer between the support substrate and the mounting surface. The first wires are electrically connected with the first electrodes. The second wires are electrically connected with the second electrodes, and each have cross-sectional area larger than cross-sectional area of each of the first wires. | 2014-01-09 |
20140008675 | Emitting Device with Improved Extraction - A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation. | 2014-01-09 |
20140008676 | OPTICAL ENHANCEMENT OF LIGHT EMITTING DEVICES - Optical enhancement of light emitting devices. In accordance with an embodiment of the present invention, an apparatus includes an optical enhancement layer comprising nanoparticles. Each of the nanoparticles includes an electrically conductive core surrounded by an electrically insulating shell. The optical enhancement layer is disposed on a top semiconductor layer in a preferred path of optical emission of a light emitting device. The nanoparticles may enhance the light emission of the light emitting device due to emitter-surface plasmon coupling. | 2014-01-09 |
20140008677 | LIGHT EMITTING DIODE - A light emitting diode includes a source layer, a metallic plasma generating layer, a first optical symmetric layer, a first electrode, and a second electrode. The source layer includes a first semiconductor layer, an active layer, and a second semiconductor layer stacked in series. The first semiconductor layer includes a first surface and a second surface opposite to the first surface. The first electrode covers and contacts the first surface. The second electrode is electrically connected with the second semiconductor layer. The metallic plasma generating layer is disposed on a surface of the source layer away from the first semiconductor layer. The first optical symmetric layer is disposed on a surface of the metallic plasma generating layer away from the first semiconductor layer. A refractive index difference between the source layer and the first optical symmetric layer is less than or equal to 0.3. | 2014-01-09 |
20140008678 | LIGHT EMITTING DIODE DEVICE - A light emitting diode device includes a substrate, a light emitting diode chip, an optical lens and an adhesive interface layer. The light emitting diode chip is electrically connected with the substrate. The optical lens has an accommodation cavity to enclose the light emitting diode chip on the substrate, wherein the accommodation cavity includes a micro diffusion structure on an inner wall thereof. The adhesive interface layer is filled within the accommodation cavity of the optical lens. | 2014-01-09 |
20140008679 | SUBSTRATE FOR MOUNTING ELEMENT AND OPTICAL MODULE - An opening is provided corresponding to an installation area of a semiconductor element in an insulating resin layer for a base material. A first insulating resin layer is provided on a part of one main surface of the insulating resin layer outside the opening to surround the opening. In addition, a second insulating resin layer coats in a continuous manner: the edge portion of the opening on the one main surface of the insulating resin layer; the end face of the opening passing through the insulating resin layer; and the edge portion of the opening on the other main surface of the insulating resin layer. The upper end portion of the end face of the second insulating resin layer in contact with the one main surface of the insulating resin layer protrudes toward the first insulating resin layer. | 2014-01-09 |
20140008684 | ILLUMINATION SYSTEM WITH LIGHT SOURCE, RADIATION CONVERTING ELEMENT AND FILTER - The invention relates to an illumination system comprising 1) a light source arranged to emit primary radiation, 2) a radiation converting element arranged to convert at least part of the primary radiation into secondary radiation, and 3) a filter arranged to block radiation generated in the illumination system having a wavelength shorter than a certain cut-off wavelength. According to the invention, the filter is designed to block a part of the secondary radiation by having arranged the cut-off wavelength of the filter in the emission spectrum of the radiation converting element. Illumination devices according to this design show emission spectra with small bandwidth. | 2014-01-09 |
20140008685 | PATTERNED UV SENSITIVE SILICONE-PHOSPHOR LAYER OVER LEDS - LED dies are mounted a single submount tile (or wafer). The LED dies have a light emitting top surface. A uniformly thick layer of UV sensitive silicone infused with phosphor is then deposited over the tile, including over the tops and sides of the LED dies. Only the silicone/phosphor over the top and sides of the LED dies is desired, so the silicone/phosphor directly on the tile needs to be removed. The silicone/phosphor layer is then masked to expose the areas that are to remain to UV light, which creates a cross-linked silicone. The unexposed silicone/phosphor layer is then dissolved with a solvent and removed from the tile surface. The silicone/phosphor layer may be defined to expose a wire bond electrode on the LED dies. The tile is ultimately singulated to produce individual phosphor-converted LEDs. | 2014-01-09 |
20140008688 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided is an optical semiconductor device includes: a light-emitting layer having a first main surface, a second main surface opposed to the first main surface, a first electrode and a second electrode which are formed on the second main surface; a fluorescent layer provided on the first main surface; a light-transmissive layer provided on the fluorescent layer and made of a light-transmissive inorganic material; a first metal post provided on the first electrode; a second metal post provided on the second electrode; a sealing layer provided on the second main surface so as to seal in the first and second metal posts with one ends of the respective first and second metal posts exposed; a first metal layer provided on the exposed end of the first metal post; and a second metal layer provided on the exposed end of the second metal post. | 2014-01-09 |
20140008689 | PACKAGE OF LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - Provided is a package of a light emitting diode. The package according to an embodiment includes a package of a light emitting diode, the package comprising: a base layer including an entire top surface that is substantially flat; a light emitting diode chip on the base layer; a lead frame electrically connected to the light emitting diode chip; and a reflective coating layer comprising titanium oxide, wherein a top surface of the reflective coating layer is substantially parallel to a top surface of the base layer, and wherein ends of the reflective coating layer and base layer are aligned with each other. | 2014-01-09 |
20140008696 | LIGHT EMITTING DEVICE PACKAGE INCLUDING A SUBSTRATE HAVING AT LEAST TWO RECESSED SURFACES - Disclosed is a light emitting device package. The light emitting device package includes a substrate comprising a recess, a light emitting chip on the substrate and a first conductive layer electrically connected to the light emitting chip. And the first conductive layer includes at least one metal layer electrically connected to the light emitting chip on an outer circumference of the substrate. | 2014-01-09 |
20140008697 | Siloxane Compositions Including Titanium Dioxide Nanoparticles Suitable For Forming Encapsulants - A composition includes an organopolysiloxane component (A) comprising at least one of a disiloxane, a trisiloxane, and a tetrasiloxane, and has an average of at least two alkenyl groups per molecule. The composition further includes an organohydrogensiloxane component (B) having an average of at least two silicon-bonded hydrogen atoms per molecule. Components (A) and (B) each independently have at least one of an alkyl group and an aryl group and each independently have a number average molecular weight less than or equal to 1500 (g/mole). The composition yet further includes a catalytic amount of a hydrosilylation catalyst component (C), and titanium dioxide (TiO | 2014-01-09 |
20140008702 | Semiconductor Packages Having Multiple Lead Frames and Methods of Formation Thereof - In accordance with an embodiment of the present invention, a semiconductor package includes a first lead frame having a first die paddle, and a second lead frame, which has a second die paddle and a plurality of leads. The second die paddle is disposed over the first die paddle. A semiconductor chip is disposed over the second die paddle. The semiconductor chip has a plurality of contact regions on a first side facing the second lead frame. The plurality of contact regions is coupled to the plurality of leads. | 2014-01-09 |
20140008703 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND CAMERA WITH ALTERNATELY ARRANGED PIXEL COMBINATIONS - A solid-state imaging device includes a semiconductor substrate; a first conductive region of the semiconductor substrate; a first conductive region on an upper surface side of the first conductive region of the semiconductor substrate; a second conductive region below the first conductive region on the upper surface side of the first conductive region of the semiconductor substrate. The solid-state imaging device further includes a photoelectric conversion region including the first conductive region located on the upper surface side of the first conductive region of the semiconductor substrate and the second conductive region and a transfer transistor transferring charges accumulated in the photoelectric conversion region to a readout region; and a pixel including the photoelectric conversion region and the transfer transistor. The first conductive region, which is included in the photoelectric conversion region, extends to the lower side of a sidewall of a gate electrode of the transfer transistor. | 2014-01-09 |
20140008706 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a method for manufacturing a semiconductor device includes forming a fin in an upper surface of a semiconductor substrate to extend in a first direction, forming a mask film, making a plurality of first trenches in the mask film to extend in a second direction to reach the fin, filling sidewall members into the first trenches, making a second trench by removing the mask film from a portion of a space between the sidewall members, forming a gate insulating film and a gate electrode on a surface of a first portion of the fin disposed inside the second trench, making a third trench by removing the mask film from the remaining space between the sidewall members, and causing a second portion of the fin disposed inside the third trench to become a conductor. | 2014-01-09 |
20140008707 | HIGH SENSITIVITY IMAGE SENSORS AND METHODS OF OPERATING THE SAME - A high sensitivity image sensor including a pixel, the pixel including a single electron field effect transistor (SEFET), the SEFET including a first conductive type well in a second conductive type substrate, second conductive type source and drain regions in the well and a first conductive type gate region in the well between the source and the drain regions. | 2014-01-09 |
20140008708 | CMOS IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME - A CMOS image sensor includes a substrate, a gate electrode formed over the substrate, a photodiode formed over the substrate to be substantially aligned with one side of the gate electrode, a floating diffusion region formed over the substrate to be substantially aligned with the other side of the gate electrode, and a blooming pass region formed below the photodiode. | 2014-01-09 |
20140008709 | CMOS IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME - A CMOS image sensor includes a substrate, a punch-through prevention layer formed over the substrate, an epitaxial layer formed over the punch-through prevention layer, a gate electrode formed over the epitaxial layer; a photodiode formed in the epitaxial layer to be substantially aligned with one side of the gate electrode, a floating diffusion region formed in the epitaxial layer to be substantially aligned with the other side of the gate electrode, and an extended photodiode region formed below the photodiode to be coupled with the punch-through prevention layer. | 2014-01-09 |
20140008714 | Three Dimensional NAND Device and Method of Charge Trap Layer Separation and Floating Gate Formation in the NAND Device - A monolithic three dimensional NAND string includes a vertical semiconductor channel and a plurality of control gate electrodes in different device levels. The string also includes a blocking dielectric layer, a charge storage region and a tunnel dielectric. A first control gate electrode is separated from a second control gate electrode by an air gap located between the major surfaces of the first and second control gate electrodes and/or the charge storage region includes silicide nanoparticles embedded in a charge storage dielectric. | 2014-01-09 |
20140008715 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a memory device includes a semiconductor substrate, first, second, third and fourth fin-type stacked layer structures, each having memory strings stacked in a first direction perpendicular to a surface of the semiconductor substrate, and each extending to a second direction parallel to the surface of the semiconductor substrate, a first part connected to first ends in the second direction of the first and second fin-type stacked layer structures each other, a second part connected to first ends in the second direction of the third and fourth fin-type stacked layer structures each other, a third part connected to second ends in the second direction of the first and third fin-type stacked layer structures each other, and a fourth part connected to second ends in the second direction of the second and fourth fin-type stacked layer structures each other. | 2014-01-09 |
20140008718 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a vertical trench gate element portion and a lateral n-channel element portion for control which includes a well diffusion region, and a junction edge termination region which surrounds the vertical trench gate element portion and the lateral n-channel element portion for control. The junction edge termination region includes an oxide layer, a sustain region in contact with a trench provided at the end, and a diffusion region in contact with the sustain region. The diffusion region is deeper than the base region and has low concentration. The sustain region is shallower than the diffusion region and has high concentration. The well diffusion region is deeper than the base region and the sustain region and has low concentration. The breakdown voltage of the junction edge termination region and the well diffusion region is higher than that of the vertical trench gate element portion. | 2014-01-09 |
20140008719 | SEMICONDUCTOR DEVICE AND A BIT LINE AND THE WHOLE OF A BIT LINE CONTACT PLUG HAVING A VERTICALLY UNIFORM PROFILE - A semiconductor device comprises: a semiconductor substrate including a cell region and a peripheral region; an insulating film formed on the top portion of the semiconductor substrate of the cell region; a bit line contact hole including the etched insulating film to expose the semiconductor substrate; a bit line contact plug buried in the bit line contact plug; and a bit line formed on the top portion of the bit line contact plug to have the same width as that of the bit line contact plug. The thickness of the insulating film around a cell bit line is minimized so as to vertically form a profile of the cell bit line, thereby improving an overlay margin of a storage node contact and an active region. | 2014-01-09 |
20140008722 | VERTICAL-GATE MOS TRANSISTOR WITH FIELD-PLATE ACCESS - An embodiment of a vertical-gate transistor disposed on a die includes a first substrate portion of a first conductivity and a second substrate portion of a second conductivity. The die includes front and rear surfaces, the first portion extending from the front surface and the second portion extending from the rear surface to the first portion, at least one drain region of the second conductivity extending from the rear surface, and at least one cell. Each cell includes a source region of the second conductivity extending from the front surface, a conductive gate region extending from the front surface to a gate depth, a conductive field-plate region extending from the front surface to a field depth, a gate-insulating layer that insulates the gate region, and a plate-insulating layer that insulates the field-plate region. An intermediate insulating layer insulates the gate region from the field-plate region. | 2014-01-09 |
20140008723 | LATERAL INSULATED GATE BIPOLAR TRANSISTOR STRUCTURE WITH LOW PARASITIC BJT GAIN AND STABLE THRESHOLD VOLTAGE - A metal-oxide-semiconductor laterally diffused device (HV LDMOS), particularly a lateral insulated gate bipolar junction transistor (LIGBT), and a method of making it are provided in this disclosure. The device includes a silicon-on-insulator (SOI) substrate having a drift region, two oppositely doped well regions in the drift region, two insulating structures over and embedded in the drift region and second well region, a gate structure, and a source region in the second well region over a third well region embedded in the second well region. The third well region is disposed between the gate structure and the second insulating structure. | 2014-01-09 |
20140008726 | SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME - A semiconductor structure fabricating method includes the following steps. Firstly, a silicon substrate is provided. The silicon substrate has a first surface and a second surface. In addition, a first semiconductor structure is formed on the first surface of the silicon substrate. Then, the second surface of the silicon substrate is textured as a rough surface. Then, a first electrode layer is formed on the rough surface. | 2014-01-09 |
20140008727 | Method for Doping Semiconductor Structures and the Semiconductor Device Thereof - A method for introducing species into a strained semiconductor layer comprising: providing a substrate comprising a first region comprising an exposed strained semiconductor layer, loading the substrate in a reaction chamber, then forming a conformal first species containing-layer by vapor phase deposition (VPD) at least on the exposed strained semiconductor layer, and thereafter performing a thermal treatment, thereby diffusing at least part of the first species from the first species-containing layer into the strained semiconductor layer and activating at least part of the diffused first species in the strained semiconductor layer. | 2014-01-09 |
20140008728 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor substrate having a hexagonal crystalline structure with a c-axis and c-planes; and transistors on a c plane of the semiconductor substrate. Source electrodes of the transistors are connected to each other. Drain electrodes of the transistors are connected to each other. Gate electrodes of the transistors are connected to each other. The gate electrodes of the transistors extend along directions that form angles with each other that are 60 degrees or 120 degrees, in a plan view seen from a direction perpendicular to the c plane of the semiconductor substrate. | 2014-01-09 |
20140008729 | STRAINED SILICON AND STRAINED SILICON GERMANIUM ON INSULATOR - A structure includes a tensilely strained nFET region including a strained silicon layer of a silicon on insulator wafer. A relaxed nFET region includes one of an ion implanted silicon and an ion implanted silicon dioxide interface layer of a tensilely strained silicon layer of the silicon on insulator wafer. A compressively strained pFET region includes a SiGe layer which was converted from a tensilely strained silicon layer of the silicon on insulator wafer. A relaxed pFET region includes one of an ion implanted silicon and an ion implanted silicon dioxide interface layer of a tensilely strained silicon layer of the silicon on insulator wafer. | 2014-01-09 |
20140008730 | Complementary Metal-Oxide-Semiconductor Device Comprising Silicon and Germanium and Method for Manufacturing Thereof - Disclosed are complementary metal-oxide-semiconductor (CMOS) devices and methods of manufacturing such CMOS devices. In some embodiments, an example CMOS device may include a substrate, and a buffer layer formed on the substrate, where the buffer layer comprises Si | 2014-01-09 |
20140008731 | FIELD-EFFECT-TRANSISTOR WITH SELF-ALIGNED DIFFUSION CONTACT - Embodiments of the present invention provide a method of forming fin-type transistors having replace-gate electrodes with self-aligned diffusion contacts. The method includes forming one or more silicon fins on top of an oxide layer, the oxide layer being situated on top of a silicon donor wafer; forming one or more dummy gate electrodes crossing the one or more silicon fins; forming sidewall spacers next to sidewalls of the one or more dummy gate electrodes; removing one or more areas of the oxide layer thereby creating openings therein, the openings being self-aligned to edges of the one or more fins and edges of the sidewall spacers; forming an epitaxial silicon layer in the openings; removing the donor wafer; and siliciding at least a bottom portion of the epitaxial silicon layer. A semiconductor structure formed thereby is also provided. | 2014-01-09 |
20140008734 | Multi-Gate FETs and Methods for Forming the Same - A method includes oxidizing a semiconductor fin to form an oxide layer on opposite sidewalls of the semiconductor fin. The semiconductor fin is over a top surface of an isolation region. After the oxidizing, a tilt implantation is performed to implant an impurity into the semiconductor fin. The oxide layer is removed after the tilt implantation. | 2014-01-09 |
20140008735 | SEMICONDUCTOR DEVICE AND FABRICATION PROCESS THEREOF - A disclosed semiconductor device includes a semiconductor substrate including a first area, a gate electrode formed over the first area of the semiconductor substrate, a first active region formed in the first area of the semiconductor substrate at a lateral side of the gate electrode, a first silicide layer formed at least on a sidewall surface of the gate electrode in the first area, the first silicide layer is electrically connected to the first active region. | 2014-01-09 |
20140008736 | FinFET with High Mobility and Strain Channel - An integrated circuit device includes a fin having a gate area beneath a gate electrode structure, a source/drain region disposed beyond ends of the fin, and a first conformal layer formed around an embedded portion of the source/drain region. A vertical sidewall of the first conformal layer is oriented parallel to the gate area. | 2014-01-09 |
20140008737 | Cantilever Packages for Sensor MEMS (MIcro-Electro-Mechanical System) - A packaged sensor MEMS ( | 2014-01-09 |
20140008738 | MEMS DIE AND METHODS WITH MULTIPLE-PRESSURE SEALING - The present subject matter relates to systems and methods for sealing one or more MEMS devices within an encapsulated cavity. A first material layer can be positioned on a substrate, the first material layer comprising a first cavity and a second cavity that each have one or more openings out of the first material layer. At least the first cavity can be exposed to a first atmosphere and sealed while it is exposed to the first atmosphere while not sealing the second cavity. The second cavity can then be exposed to a second atmosphere that is different than the first atmosphere, and the second cavity can be sealed while it is exposed to the second atmosphere. | 2014-01-09 |
20140008739 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SAME - A wafer structure ( | 2014-01-09 |
20140008742 | MAGNETIC TUNNELING JUNCTION SEED, CAPPING, AND SPACER LAYER MATERIALS - In one embodiment, a magnetic element for a semiconductor device includes a reference layer, a free layer, and a nonmagnetic spacer layer disposed between the reference layer and the free layer. The nonmagnetic spacer layer includes a binary, ternary, or multi-nary alloy oxide material. The binary, ternary, or multi-nary alloy oxide material includes MgO having one or more additional elements selected from the group consisting of: Ru, Al, Ta, Tb, Cu, V, Hf, Zr, W, Ag, Au, Fe, Co, Ni, Nb, Cr, Mo, and Rh. | 2014-01-09 |
20140008743 | SPIN-CURRENT SWITCHED MAGNETIC MEMORY ELEMENT SUITABLE FOR CIRCUIT INTEGRATION AND METHOD OF FABRICATING THE MEMORY ELEMENT - A spin-current switched magnetic memory element includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers. The plurality of magnetic layers includes at least one composite layer. | 2014-01-09 |
20140008746 | MESOSCOPIC OPTOELECTRONIC DEVICES COMPRISING ARRAYS OF SEMICONDUCTOR PILLARS DEPOSITED FROM A SUSPENSION AND PRODUCTION METHOD THEREOF - The invention illustrates an innovative way to fabricate low cost, efficient, rigid or flexible mesoscopic optoelectronic devices such as photovoltaic (PV) solar cells or photo sensors (b) comprising three-dimensional arrays of semi-conductive micro- or nano-pillars ( | 2014-01-09 |
20140008747 | METHOD OF PRODUCING ORGANIC PHOTOELECTRIC CONVERSION DEVICE - An organic photoelectric conversion device can be easily produced by a method of producing an organic photoelectric conversion device, comprising forming an anode, forming an active layer on the anode, then, forming a cathode on the active layer by a coating method. | 2014-01-09 |
20140008758 | COMPLEMENTARY BIPOLAR INVERTER - An example embodiment is a complementary transistor inverter circuit. The circuit includes a semiconductor-on-insulator (SOI) substrate, a lateral PNP bipolar transistor fabricated on the SOI substrate, and a lateral NPN bipolar transistor fabricated on the SOI substrate. The lateral PNP bipolar transistor includes a PNP base, a PNP emitter, and a PNP collector. The lateral NPN bipolar transistor includes a NPN base, a NPN emitter, and a NPN collector. The PNP base, the PNP emitter, the PNP collector, the NPN base, the NPN emitter, and the NPN collector abut the buried insulator of the SOI substrate. | 2014-01-09 |
20140008759 | FUSE OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A fuse of a semiconductor device and a method for forming the same are disclosed. The fuse includes a first metal line formed over a semiconductor substrate, a second metal line spaced apart from the first metal line, and a contact fuses formed of a metal contact coupled to the first metal line and the second metal line. Upper parts of the contact fuses overlap with each other, and lower parts are spaced apart from each other. Since the fuse is formed of a metal contact, fuse oxidation and fuse movement can be prevented. A conventional metal-contact fabrication process can be used, so that mass production of semiconductor devices is possible. In addition, the fuse region is reduced in size, reducing production costs. | 2014-01-09 |