01st week of 2009 patent applcation highlights part 14 |
Patent application number | Title | Published |
20090001303 | Single Use Valve - A single use valve ( | 2009-01-01 |
20090001304 | System to Retrofit an Artificial Lift System in Wells and Methods of Use - Pump systems for installation in a wellbore and associated methods are disclosed. The pump system includes one or more internal safety valves that may include a closure mechanism, a biasing mechanism, and an actuator. | 2009-01-01 |
20090001305 | Electronically controlled valve and systems containing same - Disclosed herein is a controlled valve. The valve includes a valve body, a sleeve, a spool, and a valve actuator assembly. The valve body includes a cavity and a first chamber. The sleeve is between the cavity and the first chamber. The sleeve includes an inner bore and at least one opening. The inner bore extends from a first end to a second end of the sleeve. The at least one opening extends through the second end of the sleeve. A portion of the inner bore forms a second chamber. The spool is movably disposed within the inner bore. The valve actuator assembly is connected to the spool. The first chamber is in fluid communication with the second chamber through the at least one opening. The spool is configured to be movable over at least a portion of the at least one opening to regulate fluid flow therethrough. | 2009-01-01 |
20090001306 | Block Valve for Vacuum Line or Network with Emergency Input - Block valve with emergency input, in particular for vacuum line or network, comprising a valve body traversed by a main fluid passage between a first orifice located at an upstream end of the said main passage and a second orifice located at a downstream end of the said main passage. The valve body further comprises a control device comprising a member operable manually by an operator and movable between at least an open position in which the said control device allows fluid communication between the first and second orifices, and a closed position in which the said control device interrupts any fluid communication between these orifices. An auxiliary fluid passage is fluidly connected via its upstream end to the said main passage between the control device and the first orifice, and comprises a third orifice at its downstream end. | 2009-01-01 |
20090001307 | Metal Valve Stem Seal and Sealing System - The present invention is directed to a metal valve stem seal and sealing system comprising a valve body; a metal valve stem housed within the valve body; a bonnet member housed within the valve body; a U-shaped metal stem gasket positioned between the metal valve stem and the bonnet member, wherein the gasket has a first lip member and a second lip member each having an interior surface and an exterior surface; a metal wedge ring fitted between the first and second lip members; and, at least one metal energizing spring adjacent the wedge ring, wherein the metal energizing spring applies a sufficient force to the wedge ring to cause the wedge ring to apply a sufficient contact pressure to the first and second lip members to form a seal between the gasket and the metal valve stem and to form a seal between the gasket and the bonnet member. | 2009-01-01 |
20090001308 | Valve to shaft assembly - A valve to shaft assembly includes a butterfly-type valve, a pair of bushings receiving the valve and holding the valve in axial position within a housing, and a shaft engaging the valve and the bushings and rotating the bushings in the housing. The bushings include features to hold the valve in position in the bore prior to assembly of the valve and, furthermore, act as rotating bearing surfaces for the valve. The valve to shaft assembly process may be simplified, especially where multiple valves are assembled to a single common drive shaft, such as in a port face charge motion control valve. Furthermore, the valve to shaft assembly provides an axial degree of freedom between valve, drive shaft, and bore, which allows the valve to float on the axis of the drive shaft, to facilitate self centering of the valve in the valve housing. | 2009-01-01 |
20090001309 | Easy-Maintenance Valve for Fire Fighting Systems - The invention application relates to a valve for pipelines of fire fighting systems, with a supply line ( | 2009-01-01 |
20090001310 | Valve body - A valve assembly for controlling water flow to a water delivery device. The valve assembly includes a valve body and a valve cartridge sealingly received within the valve body. | 2009-01-01 |
20090001311 | REFRIGERANT COMPOSITION - This invention describes a new refrigerant/lubricant combination for use in stationary and mobile refrigeration and air conditioning applications. In these applications, the refrigerant and lubricant must be soluble in each other (e.g., miscible) to ensure adequate lubricant circulation from the compressor, through the condenser, expansion device, and evaporator, and back to the compressor. Insufficient lubricant circulation will result in compressor failure. Low temperature solubility is particularly important to ensure lubricant flow through the cold evaporator. In addition, the lubricant and refrigerant combination should be stable in the presence of steel, and aluminum and copper containing metals. This invention describes the combination of refrigerant difluoroethane (e.g. R-152a) and polar, oxygenated lubricants, particular polyalkylene glycols (PAGs) and polyolesters (POEs) which may be used as a replacement for R-134a. | 2009-01-01 |
20090001312 | Antifreeze Concentrate and Coolant Compositions and Preparation Thereof - An antifreeze composition having improved thermal stability is provided. In one embodiment, the antifreeze concentrate composition comprises from 50 to 99 wt. % of a glycol-based freezing point depressant selected from the group of: alkylene glycols, glycol monoethers, glycerins, and mixtures thereof; 0.01 to 10 wt. % of at least one of a 2-ethylhexanoic acid, isononanoic acid and 3,5,5-trimethylhexanoic acid; and 0.01 to 5 wt. % of at least one of octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, neodecanoic acid, benzoic acid, 2-hydroxybenzoic acid, p-terbutylbenzoic acid, and mixtures thereof. In one embodiment, the composition is employed as a concentrate in admixture with 10 to 90 wt. % water. | 2009-01-01 |
20090001313 | Antifreeze Concentrate and Coolant Compositions and Preparation Thereof - A toxicological friendly antifreeze composition having improved thermal stability is provided. In one embodiment, the antifreeze composition comprises from 5 to 80 wt. % of an aqueous freezing point depressant selected from alkali metal salts of acetates, formates, proprionates, adipiates, and succinates, and mixtures thereof; 0.1 to 10 wt. % of at least one of a 2-ethylhexanoic acid, isononanoic acid and 3,5,5-trimethylhexanoic acid; and 0.1 to 10 wt. % of at least one of octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, neodecanoic acid, benzoic acid, 2-hydroxybenzoic acid, p-terbutylbenzoic acid, and mixtures thereof. In one embodiment, the composition is employed as a concentrate in admixture with 10 to 90 wt. % water. | 2009-01-01 |
20090001314 | Compositions for Dissolution of Low-K Dielectric Films, and Methods of Use - An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both layers from the surface of a wafer. The composition is formulated according to the invention to provide a desired removal rate of the low-k dielectric and/or photoresist from the surface of the wafer. By varying the fluorine ion component, and the amounts of the fluorine ion component and acid, component, and controlling the pH, a composition can be formulated in order to achieve a desired low-k dielectric removal rate that ranges from slow and controlled at about 50 to about 1000 angstroms per minute, to a relatively rapid removal of low-k dielectric material at greater than about 1000 angstroms per minute. The composition can also be formulated to selectively remove a photoresist layer, leaving the underlying low-k dielectric layer essentially intact. | 2009-01-01 |
20090001315 | ALKALINE AQUEOUS SOLUTION COMPOSITION USED FOR WASHING OR ETCHING SUBSTRATES - As a washing liquid and an etching solution for semiconductor substrates and glass substrates, alkaline aqueous solutions are used; however, since metal impurities are adsorbed on the substrate surface during processing, a next process for removing the adsorbed metal impurities is required. In addition, when a washing liquid is used, it cannot wash off metal impurities; therefore an acid washing process is required. The present invention provides an aqueous solution composition, which is an alkaline aqueous solution but is able to prevent adsorption of metal impurities, which also has cleaning capability. | 2009-01-01 |
20090001316 | SYSTEM AND PROCESS FOR PRODUCTION OF LIQUID PRODUCT FROM LIGHT GAS - A method for producing a product comprising at least one selected from C | 2009-01-01 |
20090001317 | Liquid crystalline polyester composition - The present invention provides a liquid crystalline polyester composition comprising a terphenyl and a liquid crystalline polyester, wherein the terphenyl substantially consists of p-terphenyl, and the p-terphenyl is contained in the composition in the amount of 0.3 to 15 parts by weight on the basis of 100 parts by weight of the liquid crystalline polyester. The liquid crystalline polyester composition has high flowability and low anisotropy, which can also suppress generation of gases when molded. | 2009-01-01 |
20090001318 | Phosphor for Producing White Light Under Excitation of UV Light and Method for making the same - A phosphor material for producing white light under excitation of UV light and a method for making the same. The phosphor material is an alkaline-earth silicates compound with a chemical formula of (A | 2009-01-01 |
20090001319 | Material Composition for Producing Blue Phosphor by Excitation of UV Light and Method for Making the same - A phosphor material composition for producing blue phosphor by the excitation of UV light and a method for making the same. The phosphor material is an alkaline-earth silicates compound with a chemical formula of A | 2009-01-01 |
20090001320 | SYSTEM AND PROCESS FOR GAS SWEETENING - A method for removing hydrogen sulfide from a sour gas stream comprising hydrogen sulfide by oxidizing hydrogen sulfide in a converter by contacting the sour gas stream with an aqueous catalytic solution, thereby producing a desulfurized gas stream and a liquid stream comprising reduced catalyst and elemental sulfur, introducing an oxidant and the liquid stream comprising reduced catalyst and elemental sulfur into a high shear device and producing a dispersion wherein the mean bubble diameter of the oxidant gas in the dispersion is less than about 5 μm, introducing the dispersion into a vessel from which a sulfur-containing slurry is removed and a regenerated catalyst stream is removed, wherein the sulfur slurry comprises elemental sulfur and aqueous liquid, and recycling at least a portion of the regenerated catalyst stream to the converter. A system of apparatus for carrying out the method is also provided. | 2009-01-01 |
20090001321 | AQUEOUS SOLUTION OF POLYMER HAVING UPPER CRITICAL SOLUTION TEMPERATURE, AQUEOUS DISPERSION OF PARTICLE MODIFIED WITH THE POLYMER AND METHOD OF STORING THE SAME - It is intended to provide an aqueous solution of a thermoresponsive polymer and an aqueous dispersion of a thermoresponsive particle, which show an upper critical solution temperature (UCST) and are capable of maintaining a dissolved state and a dispersed state, respectively, even if they are stored for a long period of time at a temperature at which a ligand such as an antibody or an antigen is not inactivated. A UCST lowering agent is incorporated in a predetermined amount in an aqueous solution of a thermoresponsive polymer which shows a UCST in a state of containing water or an aqueous dispersion of a thermoresponsive particle containing the polymer, thereby lowering the UCST of the aqueous solution or aqueous dispersion to less than the storage temperature, and the resulting aqueous solution or aqueous dispersion is stored. | 2009-01-01 |
20090001322 | Process for Preparing Alkoxypolyoxyalkylene (Meth) Acrylates - Process for preparing an alkoxypolyoxyalkylene (meth)acrylate in which
| 2009-01-01 |
20090001323 | Method for preparing analytical standard, and analytical standard prepared by the same - There is provided a method for preparing an analytical standard used for microbeam X-ray fluorescence analysis which includes: a mixing step A in which an element is added to a base material, and the base material and the element are mixed by stirring to obtain a mixed solution; a deaeration step B in which the mixed solution is deaerated; a freeze step D in which the mixed solution is slowly frozen; and a cutting step F in which a thin section is cut out from the frozen mixed solution. In order to surely remove bubbles from the mixed solution, the deaeration step B may contain a stationary step in which the mixed solution is allowed to stand still at room temperature; or the stationary step includes a removal step in which gas contained in the mixed solution which is allowed to stand still is removed with a suction apparatus. | 2009-01-01 |
20090001324 | Salicylate Substituted Conjugated Polymers and Devices - A compound having a structural unit of Formula: (I). A polymer having a structural unit of Formula: (II). A conjugated polymer having one or more side groups of the following Formula: (III). Additionally, compositions, polymer blends, films, coatings, and electronic devices prepared from such polymers. | 2009-01-01 |
20090001325 | POLYMER COMPOSITES HAVING HIGHLY DISPERSED CARBON NANOTUBES AND METHODS FOR FORMING SAME - A method of forming carbon nanotube-polymer composites includes the steps of forming a mixture solution including a plurality of carbon nanotubes dispersed in a co-solvent. The co-solvent includes an organic solvent and a second solvent being a short chain fluorinated carboxylic acid having a boiling point below 150° C. which is less oxidizing than nitric acid, and is soluble in both the organic solvent and water. The first polymer is mixed with the mixture solution to form a polymer including mixture. The co-solvent is removed from the polymer mixture to form a dispersed nanotube-polymer composite. The second solvent can be trifluoroacetic acid. | 2009-01-01 |
20090001326 | Aggregate of carbon nanotubes, dispersion thereof and conductive film using the same - Provided is an aggregate of carbon nanotubes satisfying (1) there is a 2θ peak at 24°±2° by X-ray powder diffraction analysis; (2) a height ratio (G/D ratio) of G band to D band by Raman spectroscopic analysis of wavelength 532 nm is 30 or more; and (3) a combustion peak temperature is 550° C. or more, and 700° C. or less. The present invention provides an aggregate of carbon nanotubes excellent in dispersibility while high quality, giving a film, molded article, membrane or the like having excellent characteristics | 2009-01-01 |
20090001327 | Doped Organic Semiconductor Material - The present invention relates to a doped organic semiconductor material comprising at least one organic matrix material, which is doped with at least one dopant, the matrix material being selected from a group consisting of certain phenanthroline derivatives; and also an organic light-emitting diode which comprises such a semiconductor material. | 2009-01-01 |
20090001328 | Paste for Solar Cell Electrode and Solar Cell - In a paste for a solar cell light-receiving surface electrode including silver particles, glass frit, resin binder, and thinner, silver particles with a specific surface of 0.20-0.60 m | 2009-01-01 |
20090001329 | RARE EARTH-OXIDES, RARE EARTH-NITRIDES, RARE EARTH-PHOSPHIES, AND TERNARY ALLOYS WITH SILICON - Atomic layer epitaxy (ALE) is applied to the fabrication of new forms of rare-earth oxides, rare-earth nitrides and rare-earth phosphides. Further, ternary compounds composed of binary (rare-earth oxides, rare-earth nitrides and rare-earth phosphides) mixed with silicon and or germanium to form compound semiconductors of the formula RE-(O, N, P)—(Si,Ge) are also disclosed, where RE=at least one selection from group of rare-earth metals, O=oxygen, N=nitrogen, P=phosphorus, Si=silicon and Ge=germanium. The presented ALE growth technique and material system can be applied to silicon electronics, opto-electronic, magneto-electronics and magneto-optics devices. | 2009-01-01 |
20090001330 | Electrical Insulating Oil Compositions and Preparation Thereof - An electrical insulating oil composition is prepared from an isomerized base oil. The electrical insulating oil composition in one embodiment exhibits excellent sulphur corrosion protection property with a sulphur level of <5 ppm; excellent gassing tendency of <30 μL per minute as measured according to ASTM D-2300-1976, and a rotary pressure vessel oxidation stability (RPVOT) value of at least 400 minutes as measured according to ASTM D 2272-02. | 2009-01-01 |
20090001331 | Paint Compositions, a Method of Paint Finishing and Painted Objects - Disclosed herein is a paint composition comprising a carboxyl group containing resin comprising two or more carboxyl groups per molecule, having an acid number of from 100 to 300 mgKOH/g and a weight average molecular weight of from 2,000 to 30,000, obtained by the copolymerization of a carboxyl group containing radically polymerizable monomer and another radically polymerizable monomer, wherein the carboxyl group containing resin comprises 5 to 50 weight percent of structural units based on a lactone compound, based on resin solids; an epoxy group containing resin, comprising two or more epoxy groups per molecule; an ultraviolet absorber; and a light stabilizer having a pKb value of at least 9; wherein the molar ratio of the carboxyl groups of the carboxyl group containing resin to the epoxy groups of the epoxy group containing resin is 3:1 to 1:3. | 2009-01-01 |
20090001332 | MULTI-COMPARTMENTAL WINCH DEVICE - An apparatus positions a boat having a clip attached to a bow onto a boat trailer. The apparatus is used with a winch and two guides mounted on the boat trailer. The two guides are positioned a selected distance from the winch toward the rear of the boat trailer and spaced apart from each other. The apparatus includes three line sections windable about a reel of the winch with two of the line sections being windable about the reel in one direction and the third line being wound in an opposite direction. The two lines that are wound on the reel in the same direction extend around the guides while the third line extends between the guides and all of the lines being connected to each other at their distal ends. Forward movement of the boat engages the clip with the lines such that the boat can be winched onto the trailer. | 2009-01-01 |
20090001333 | ELEVATOR ELEMENT FOR DRIVING OR REVERSING AN ELEVATOR SUSPENSION MEANS IN AN ELEVATOR SYSTEM - In an elevator element for driving or reversing an elevator suspension device in an elevator system, that interacts with an elevator suspension device, the arithmetic mean of the roughness value of the contact surface measured in the circumferential direction of the elevator element, and the mean roughness value of the contact surface measured in the axial direction of the elevator element, are different. The arithmetic mean roughness value of the contact surface measured in the circumferential direction of the elevator element is less than 1 micrometer. | 2009-01-01 |
20090001334 | CONTROL BARRIER - A barrier includes a housing having an interior surface and an opposing exterior surface extending between a first end and an opposing second end, the interior surface bounding a chamber that is adapted to receive a ballast. A coupler is rigidly connected to the first end of the housing, the housing and the coupler being separate discrete members that are connected together after formation. A structure, such as an opening or a post, is formed on the coupler for removably connecting a separate barrier to the coupler. | 2009-01-01 |
20090001335 | Redeployable barrier fence system - A redeployable security barrier system and methods for using the same are disclosed, the barrier system comprising an assembly of individual foundation barrier units or structures, which provide a vehicle-impact resistant foundation portion, and an upper, generally visually transparent, personnel-scaling resistant fence portion that spans the assembly of barrier units. | 2009-01-01 |
20090001336 | PHASE CHANGE MATERIAL BASED TEMPERATURE SENSOR - A block of phase change material located in a semiconductor chip is reset to an amorphous state. The block of phase change material may be connected to an internal resistance measurement circuit that can transmit the measured resistance data to input/output pads either in an analog output format or in a digital output format. Depending on the ambient temperature, the resistance of the block of phase change material changes. By measuring a fractional resistance change compared to the resistance of the phase change material at a calibration temperature, the temperature of the region around the phase change material can be accurately measured. A logic decoder and an input/output circuit may be employed between the internal resistance measurement circuit and the input/output pads. A plurality of temperature sensing circuits containing phase change material blocks may be employed in the semiconductor chip to enable an accurate temperature profiling during chip operation. | 2009-01-01 |
20090001337 | Phase Change Memory Cell with Vertical Transistor - A memory cell in an integrated circuit is fabricated in part by forming a lower electrode feature, an island, a sacrificial feature, a gate feature, and a phase change feature. The island is formed on the lower electrode feature and has one or more sidewalls. It comprises a lower doped feature, a middle doped feature formed above the lower doped feature, and an upper doped feature formed above the middle doped feature. The sacrificial feature is formed above the island, while the gate feature is formed along each sidewall of the island. The gate feature overlies at least a portion of the middle doped feature of the island and is operative to control an electrical resistance therein. Finally, the phase feature is formed above the island at least in part by replacing at least a portion of the sacrificial feature with a phase change material. The phase change material is operative to switch between lower and higher electrical resistance states in response to an application of an electrical signal. | 2009-01-01 |
20090001338 | Seek-and-scan probe memory devices with nanostructures for improved bit size and resistance contrast when reading and writing to phase-change media - A seek-and-scan probe memory device comprising a patterned capping layer over a phase-change media, where the patterned capping layer defines the bit locations on the phase-change media. The patterned capping layer may be formed from self-assembled structures. In other embodiments, nanostructures are formed on the bottom electrode below the phase-change media to focus an applied electric field from the probe, so as to increase bit density and contrast. The nanostructures may be a regular or random array of nanostructures, formed by using a self-assembling material. The nanostructures may be conductive or non-conductive. Other embodiments are described and claimed. | 2009-01-01 |
20090001339 | Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same - A slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water, a nitrogenous compound, and optionally abrasive particles, an oxidizing agent, or a combination thereof. The slurry composition can polish a phase-change memory device at a high rate, can achieve high polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), and can minimize the occurrence of processing imperfections (e.g., dishing and erosion) to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition. | 2009-01-01 |
20090001340 | Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same - A slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water and iron or an iron compound. The slurry composition can achieve high polishing rate on a phase-change memory device and improved polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), can minimize the occurrence of processing imperfections (e.g., dishing and erosion), and can lower the etch rate on a phase-change memory material to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition. | 2009-01-01 |
20090001341 | Phase Change Memory with Tapered Heater - An embodiment of the present invention includes a method of forming a nonvolatile phase change memory (PCM) cell. This method includes forming at least one bottom electrode; forming at least one phase change material layer on at least a portion of an upper surface of the bottom electrode; forming at least one heater layer on at least a portion of an upper surface of the phase change material layer; and shaping the heater layer into a tapered shape, such that an upper surface of the heater layer has a cross-sectional width that is longer than a cross-sectional width of a bottom surface of the heater layer contacting the phase change material layer. | 2009-01-01 |
20090001342 | MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME - In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a reversible resistance-switching element above the first conductor using a selective growth process; (3) forming a diode above the first conductor; and (4) forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided. | 2009-01-01 |
20090001343 | MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME - In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a diode above the first conductor; (3) forming a reversible resistance-switching element above the first conductor using a selective deposition process; and (4) forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided. | 2009-01-01 |
20090001344 | MEMORY CELL THAT EMPLOYS A SELECTIVELY GROWN REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME - In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a reversible resistance-switching element above the first conductor using a selective growth process; (3) forming a diode above the first conductor; and (4) forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided. | 2009-01-01 |
20090001345 | MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME - In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a diode above the first conductor; (3) forming a reversible resistance-switching element above the first conductor using a selective deposition process; and (4) forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided. | 2009-01-01 |
20090001346 | Non-Volatile Polymer Bistability Memory Device - The present invention relates to non-volatile memory device utilizing multi-layered self-assembled Ni1-xFex nanocrystalline arrays embedded in a polymer thin film without source and drain regions and the fabrication method thereof. It is possible to fabricate nano-crystallines more simply than hitherto method according to the present invention. More particularly, it is possible to control size and density of nano-crystallines without agglomeration of the crystallines since the crystallines, which have uniform distribution, are besieged to polymer layer. Furthermore, the present invention provides the non-volatile bistable memory device having chemical and electrical stability of higher efficiency and lower cost than conventional flash memory devices with a nano floating gate. Also, source and drain region is unnecessary in the device of the present invention, it can reduce the throughput time and cost. | 2009-01-01 |
20090001347 | 3D R/W cell with reduced reverse leakage - A nonvolatile memory device includes a semiconductor diode steering element, and a semiconductor read/write switching element. | 2009-01-01 |
20090001348 | SEMICONDUCTOR DEVICE - A programmable semiconductor device has a switch element in an interconnection layer, wherein in at least one of the inside of a via, interconnecting a wire of a first interconnection layer and a wire of a second interconnection layer, a contact part of the via with the wire of the first interconnection layer and a contact part of the via with the wire of the second interconnection layer, there is provided a variable electrical conductivity member, such as a member of an electrolyte material. The via is used as a variable electrical conductivity type switch element or as a variable resistance device having a contact part with the wire of the first interconnection layer as a first terminal and having a contact part with the wire of the second interconnection layer as a second terminal. | 2009-01-01 |
20090001349 | LIGHT-EMITTING NANOCOMPOSITE PARTICLES - A method of making an inorganic light emitting layer includes combining a solvent for semiconductor nanoparticle growth, a solution of core/shell quantum dots, and semiconductor nanoparticle precursor(s); growing semiconductor nanoparticles to form a crude solution of core/shell quantum dots, semiconductor nanoparticles, and semiconductor nanoparticles that are connected to the core/shell quantum dots; forming a single colloidal dispersion of core/shell quantum dots, semiconductor nanoparticles, and semiconductor nanoparticles that are connected to the core/shell quantum dots; depositing the colloidal dispersion to form a film; and annealing the film to form the inorganic light emitting layer. | 2009-01-01 |
20090001350 | High hole mobility semiconductor device - One embodiment of the invention includes a high hole mobility p-channel GaAs | 2009-01-01 |
20090001351 | Insb Thin Film Magnetic Sensor and Fabrication Method Thereof - The present invention relates to a thin film lamination to be used in a micro InSb thin film magnetic sensor which can directly detect a magnetic flux density with high sensitivity and has small power consumption and consumption current, and the InSb thin film magnetic sensor. The InSb thin film magnetic sensor uses an InSb thin film as a magnetic sensor section or a magnetic detecting section. The sensor includes an InSb layer that is an InSb thin film formed on a substrate, and an Al | 2009-01-01 |
20090001352 | Non-Volatile Memory Device, Method of Manufacturing the Same, and Semiconductor Package - Provided is a non-volatile memory device that can be highly integrated and may have a high reliability. Some embodiments of the non-volatile memory device include a first doping layer having a first conductivity on a substrate, a semiconductor pillar extending from the first doping layer on the substrate in an upward direction and having second conductivity opposite to the first conductivity, and a control gate electrode surrounding a sidewall of the semiconductor pillar. Embodiments of the non-volatile memory device may include a charge storage layer interposed between the semiconductor pillar and the control gate electrode and a second doping layer of the first conductivity that is disposed on the semiconductor pillar and is electrically connected to the semiconductor pillar. | 2009-01-01 |
20090001353 | HETEROPYRENE-BASED SEMICONDUCTOR MATERIALS FOR ELECTRONIC DEVICES AND METHODS OF MAKING THE SAME - A thin layer of organic semiconductor material comprising a comprising an organic semiconductor thin film material is disclosed in which the thin film material substantially comprises a heteropyrene compound or derivative. In one embodiment, a thin film transistor comprises a layer of the organic semiconductor material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by relative low-temperature sublimation or solution-phase deposition onto a substrate. | 2009-01-01 |
20090001354 | HETEROCYCLOALKYL-SUBSTITUTED NAPHTHALENE-BASED TETRACARBOXYLIC DIIMIDE COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS - A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to one or both of the imide nitrogen atoms, a substituted or unsubstituted heterocycloalkyl ring system. Such transistors can further comprise spaced apart first and second contacts or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 200° C. | 2009-01-01 |
20090001355 | POLYMERIC MATERIAL, METHOD OF FORMING THE POLYMERIC MATERIAL, AND METHOD OF FORMING A THIN FILM USING THE POLYMERIC MATERIAL - A method of forming a polymeric material with a pendant polycyclic aromatic compound precursor includes forming a polycyclic aromatic compound precursor (e.g., a pentacene precursor) including at least one polymerizable functionality, and polymerizing the polymerizable functionality to form the polymeric material with the pendant precursor. | 2009-01-01 |
20090001356 | ELECTRONIC DEVICES HAVING A SOLUTION DEPOSITED GATE DIELECTRIC - An electronic device comprises a solution deposited gate dielectric, the gate dielectric comprising a dielectric material formed by polymerizing a composition comprising a polymerizable resin and zirconium oxide nanoparticles. | 2009-01-01 |
20090001357 | Novel Condensed Polycyclic Aromatic Compound and Use Thereof - The object of the present invention to provide an organic semiconductor device comprising an organic semiconductor material satisfying both the requirement of high electron field-effect mobility and high on/off current ratio. The present invention provides a novel condensed polycyclic aromatic compound satisfying both the high electron field-effect mobility and high on/off current ratio required for organic semiconductor materials. | 2009-01-01 |
20090001358 | ORGANIC LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light emitting device and a method of manufacturing the same are disclosed. The organic light emitting device includes a substrate, a gate electrode on the substrate, a first insulating film insulating the gate electrode, a semiconductor layer positioned opposite to the gate electrode, a second insulating film insulating the semiconductor layer, source and drain electrodes connected to the semiconductor layer, a first electrode connected to one of the source and drain electrodes, a third insulating film including an opening that exposes the first electrode, a second electrode positioned opposite to the first electrode, and a light emitting layer positioned between the first electrode and the second electrode. A taper angle of an edge area of the third insulating film contacting the first electrode lies substantially in a range between 10° and 50°. | 2009-01-01 |
20090001359 | Redox Systems for Stabilization and Life Extension of Polymer Semiconductors - The invention relates to an organic electronic component with improved voltage stability and a method for producing it, wherein the voltage stability in the device is improved by targeted addition of additives and/or by formation of an interlayer. The invention for the first time makes it possible to stabilize organic electronic components by modification with a reducing, oxidizing and/or redox system comprising one and/or more functional materials and/or by incorporation of one or more interlayers comprising, as main constituent, a reducing, oxidizing and/or redox system, primarily in the area of relatively high voltages. | 2009-01-01 |
20090001360 | ORGANIC EL DISPLAY AND METHOD FOR PRODUCING THE SAME - The present invention provides an organic electroluminescence display having an organic EL element and a thin film field-effect transistor formed on the organic EL element, wherein an electrically conductive etching protective layer which is electrically connected to an upper electrode is disposed between the upper electrode and the thin film field-effect transistor, a protective insulating layer is disposed between the electrically conductive etching protective layer and the thin film field-effect transistor, and a source electrode or a drain electrode of the thin film field-effect transistor and the electrically conductive etching protective layer are electrically connected through a contact hole formed in the protective insulating layer; and a method for producing thereof. | 2009-01-01 |
20090001361 | Thin-film transistor device and a method for manufacturing the same - The present invention provides a method of manufacturing a thin-film transistor device. This method enables improvement in performance of a complementary TFT circuit incorporated in a thin- and light-weighted image display device or a flexible electronic device and also enables reduction of power consumption and reduction of manufacturing cost of the circuit. Further in the method, the number of manufacturing steps is decreased so that mass production and growth in size of thin film transistor devices are facilitated through a printing technique. In this method, electrodes forming n-type and p-type TFT and an organic semiconductor are made of the same material in both types of TFT by the solution-process and/or printable process method. A first polarizable thin-film | 2009-01-01 |
20090001362 | Organic Thin Film Transistor and Manufacturing Process the Same - Described is a SIT type organic thin film transistor in which gate electrodes are formed as a conductive layer where a plurality of wire-shaped conductive materials are arranged in such a manner that a distance to the nearest wire is 100 nm or less at any point in the space between the wires or a semiconductor portion (B) between the gate electrodes has a rectangular cross section formed by a length of shorter sides in the range of 20 nm to 200 nm and a length of longer side 2 μm or more. This provides an organic thin film transistor which can be fabricated easily at a low temperature, at a low cost, and with high-speed drive ability, a high ON/OFF ratio, and a high controllability. | 2009-01-01 |
20090001363 | ZINC OXIDE SEMICONDUCTOR AND METHOD OF MANUFACTURING THE SAME - There are provided a method of manufacturing a zinc oxide semiconductor, and a zinc oxide semiconductor manufactured using the method. A metal catalyst layer is formed on a zinc oxide thin film that has an electrical characteristic of a n-type semiconductor, and a heat treatment is performed thereon so that the zinc oxide thin film is modified into a zinc oxide thin film having an electrical characteristic of a p-type semiconductor. Hydrogen atoms existing in the zinc oxide thin film are removed by a metal catalyst during the heat treatment. Accordingly, the hydrogen atoms existing in the zinc oxide thin film are removed by the metal catalyst and the heat treatment, and the concentration of holes serving as carriers is increased. That is, an n-type zinc oxide thin film is modified into a highly-concentrated p-type zinc oxide semiconductor. | 2009-01-01 |
20090001364 | Semiconductor Device - Plural I/O cells ( | 2009-01-01 |
20090001365 | MEMORY CARD FABRICATED USING SIP/SMT HYBRID TECHNOLOGY - A portable memory card formed from a multi-die assembly, and methods of fabricating same, are disclosed. One such multi-die assembly includes an LGA SiP semiconductor package and a leadframe-based SMT package both affixed to a PCB. The multi-die assembly thus formed may be encased within a standard lid to form a completed portable memory card, such as a standard SD™ card. Test pads on the LGA SiP package, used for testing operation of the package after it is fabricated, may also be used for physically and electrically coupling the LGA SiP package to the PCB. | 2009-01-01 |
20090001366 | Wafer Arrangement and Method for Manufacturing a Wafer Arrangement - A wafer arrangement in accordance with an embodiment of the invention includes a wafer having a plurality of dice, wherein at least some of the dice have a first connection, and at least one contact pad formed at the wafer edge, wherein a plurality of first connections are coupled by means of a section of a redistribution layer and the contact pad is formed by the section of the redistribution layer. | 2009-01-01 |
20090001367 | SEMICONDUCTOR DEVICE, METHOD OF FABRICATING THE SAME, STACKED MODULE INCLUDING THE SAME, CARD INCLUDING THE SAME, AND SYSTEM INCLUDING THE STACKED MODULE - A semiconductor device in which a plurality of chips can be reliably stacked without reducing integration thereof. The semiconductor device includes a substrate on which a circuit is provided. Pads are disposed on the substrate for testing the circuit. At least one terminal is provided on the substrate. First conductors are used to electrically couple the pads and the circuit. Second conductors are used to electrically couple the at least one terminal and the circuit. A switching element is disposed in the middle of the first conductors to control the electrical connection between the pads and the circuit. A plurality of semiconductor devices may be stacked on top of one another to form a stacked module, wherein chip selection lines are formed, which extend to the bottom of each of the semiconductor devices to electrically couple chip selection terminals from among the at least one terminal of the semiconductor devices. | 2009-01-01 |
20090001368 | Semiconductor device including semiconductor evaluation element, and evaluation method using semiconductor device - Provided are a semiconductor evaluation element capable of analytically estimating the amount of DC variation of a MOS transistor which is caused by formed contacts, and an evaluation circuit and an evaluation method using the semiconductor evaluation element. The semiconductor evaluation element such as a MOS transistor includes: a gate; diffusion layers; measurement contacts; and floating contacts. The diffusion layers are formed on both sides of the gate and serve as a source and a drain. The measurement contacts are provided in positions apart from the gate on the diffusion layers. The floating contacts are provided between the gate and the measurement contacts to connect electrically isolated metal layers with the diffusion layers. | 2009-01-01 |
20090001369 | Evaluation method for interconnects interacted with integrated-circuit manufacture - A design and evaluation method for interconnect wires of integrated circuits is provided to detect, analyze and predict response of interconnect layout to integrated-circuit manufacture processes. | 2009-01-01 |
20090001370 | Method and apparatus for extracting properties of interconnect wires and dielectrics undergoing planarization process - The present invention provides a novel solution for simultaneously extracting the properties of the interconnect wires and the inter-wire dielectrics exposed to the IC planarization process. | 2009-01-01 |
20090001371 | BLOCKING PRE-AMORPHIZATION OF A GATE ELECTRODE OF A TRANSISTOR - A technique is presented which provides for a selective pre-amorphization of source/drain regions of a transistor while preventing pre-amorphization of a gate electrode of the transistor. Illustrative embodiments include the formation of a pre-amorphization implant blocking material over the gate electrode. Further illustrative embodiments include inducing a strain in a channel region by use of various stressors. | 2009-01-01 |
20090001372 | Efficient cooling of lasers, LEDs and photonics devices - The present invention provides an optoelectronic device comprising a heat source and a heat transfer fluid. The present invention also provides a method of preparing an optoelectronic device, which comprises (i) providing a heat source, and (ii) filling a space in the vicinity of the heat source with a heat transfer liquid. The optoelectronic device has gained technical merits such as improved heat removing efficiency, lower chip/junction temperature, increased lumen output, longer operational lifetime, and better reliability, among others. | 2009-01-01 |
20090001373 | ELECTRODE OF ALUMINUM-ALLOY FILM WITH LOW CONTACT RESISTANCE, METHOD FOR PRODUCTION THEREOF, AND DISPLAY UNIT - Disclosed herein are an electrode of aluminum alloy film, a method for production thereof, and a display unit provided therewith, said electrode exhibiting a low electric resistance when in contact with a transparent oxide conductive film even though the aluminum alloy contains a less amount of alloying element than usual. The electrode of low contact resistance type is an aluminum alloy film in direct contact with a transparent oxide electrode, wherein said aluminum alloy film contains 0.1-1.0 atom % of metal nobler than aluminum and is in direct contact with a transparent oxide electrode through a surface having surface roughness no smaller than 5 nm in terms of maximum height Rz. | 2009-01-01 |
20090001374 | Tft Substrate, Reflective Tft Substrate and Method for Manufacturing These Substrates - An object of the invention is to propose a TFT substrate and a reflective TFT substrate which can be operated stably for a prolonged period of time, can be prevented from being suffering from crosstalk, and is capable of significantly reducing manufacturing cost by decreasing the number of production steps, as well as to propose the method for producing these substrates. | 2009-01-01 |
20090001375 | Light-emitting device - In a light-emitting device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions. | 2009-01-01 |
20090001376 | Poly crystalline silicon semiconductor device and method of fabricating the same - Provided are a poly crystalline silicon semiconductor device and a method of fabricating the same. Portions of a silicon layer except for gates are removed to reduce a parasitic capacitance caused from the silicon layer existing on gate bus lines. The silicon layer exists under the gates only, thus the parasitic capacitance is reduced and the deterioration and the delay of signals are prevented. Accordingly, the poly crystalline silicon semiconductor device, such as a thin film transistor, has excellent electric characteristics. | 2009-01-01 |
20090001377 | PIXEL STRUCTURE AND FABRICATION METHOD THEREOF - A pixel structure and a fabrication method thereof are provided, wherein a semiconductor pattern and a data line are defined simultaneously by performing a half-tone or grey-tone masking process. In addition, a self-alignment manner is further adopted to fabricate a lightly doped region with symmetric lengths on two sides of a channel region through steps such as photoresist ashing and etching, so as to prevent the problem of misalignment of mask generated when a mask is used to define the lightly doped region in the conventional art. Furthermore, a source pattern and a drain pattern are made to directly contact a source region and a drain region of the semiconductor pattern, such that a process of fabricating a via is omitted. Besides, in the present invention, a common line pattern surrounding the peripheral of the pixel region is also formed to improve the aperture ratio of the pixel structure. | 2009-01-01 |
20090001378 | DISPLAY DEVICE AND DRIVING METHOD THEREOF - A display device in which not only a variation in a current value due to a threshold voltage but also a variation in a current value due to mobility are prevented from influencing luminance with respect to all the levels of grayscale to be displayed. After applying an initial potential for correction to a gate and a drain of a driving transistor, the gate and the drain of the driving transistor is kept connected in a floating state, and a voltage is held in a capacitor before a voltage between the gate and a source of the driving transistor becomes equal to a threshold voltage. When a voltage obtained by subtracting the voltage held in the capacitor from a voltage of a video signal is applied to the gate and the source of the driving transistor, a current is supplied to a light-emitting element. A value of an initial voltage for correction differs in accordance with the voltage of the video signal. | 2009-01-01 |
20090001379 | SEMICONDUCTOR DEVICE - In a semiconductor device having a plurality of thin film transistors and matrix wiring lines formed on a substrate, the matrix wiring lines are electrically connected via resistors in order to prevent electrostatic destructions during a panel manufacture process and improve a manufacture yield. | 2009-01-01 |
20090001380 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME AND METHOD OF FABRICATING THE SAME - A thin film transistor includes a substrate, a semiconductor layer disposed on the substrate, including a channel region and source and drain regions and crystallized using a metal catalyst, a gate electrode disposed to correspond to a predetermined region of the semiconductor layer, a gate insulating layer disposed between the gate electrode and the semiconductor layer to insulate the semiconductor layer from the gate electrode, and source and drain electrodes electrically connected to the source and drain regions of the semiconductor layer, respectively. The metal catalyst within 150 Å from a surface of the semiconductor layer in a vertical direction is formed to have a concentration exceeding 0 and not exceeding 6.5×E | 2009-01-01 |
20090001381 | Semiconductor device - A semiconductor device includes a substrate, laminated layers provided on the substrate. The laminated layers include an AlGaN barrier layer as an uppermost layer. A gate electrode is provided in a channel region of the laminated layers. A source electrode and a drain electrode are provided so as to face each other via the channel region interposed therebetween. A silicon nitride film is formed to cover an exposed surface of the laminated layers exposed via the gate electrode, the source electrode and the drain electrode. The silicon nitride film has characteristics that an etching rate thereof is in a range from 1 nm per/min to 2 nm/min for an etchant in which hydrofluoric acid having a concentration of 50 weight percent and ammonium fluoride having a concentration of 40 weight percent are mixed at a mixing ratio of 1:9. | 2009-01-01 |
20090001382 | Schottky barrier diode and method for making the same - A schottky diode includes a SiC substrate which has a first surface and a second surface facing away from the first surface, a semiconductor layer which is formed on the first surface of the SiC substrate, a schottky electrode which is in contact with the semiconductor layer, and an ohmic electrode which is in contact with the second surface of the SiC substrate. The first surface of the SiC substrate is a (000-1) C surface, upon which the semiconductor layer is formed. | 2009-01-01 |
20090001383 | Doped Diamond LED Devices and Associated Methods - LED devices and methods for making such devices are provided. One such method may include forming epitaxially a substantially single crystal SiC layer on a substantially single crystal Si wafer, forming epitaxially a substantially single crystal diamond layer on the SiC layer, doping the diamond layer to form a conductive diamond layer, removing the Si wafer to expose the SiC layer opposite to the conductive diamond layer, forming epitaxially a plurality of semiconductor layers on the SiC layer such that at least one of the semiconductive layers contacts the SiC layer, and coupling an n-type electrode to at least one of the semiconductor layers such that the plurality of semiconductor layers is functionally located between the conductive diamond layer and the n-type electrode. | 2009-01-01 |
20090001384 | Group III Nitride semiconductor HFET and method for producing the same - Provided is an HFET exhibiting reduced buffer leakage current. The HFET of the present invention includes an SiC substrate, an AlN layer, a graded AlGaN layer, a GaN layer, an AlGaN layer (Al compositional proportion: 20%), a source electrode, a gate electrode, and a drain electrode, wherein the AlN layer, the graded AlGaN layer, the GaN layer, and the AlGaN (Al: 20%) layer are successively stacked on the substrate, and the electrodes are formed on the AlGaN (Al: 20%) layer so as to be separated from one another. In the graded AlGaN layer, the Al compositional proportion gradually decreases from 30% (at the side facing the AlN layer) to 5% (at the side facing the GaN layer). Provision of the graded AlGaN layer reduces strain between the AlN layer and the GaN layer. Therefore, the HFET exhibits reduced buffer leakage current. | 2009-01-01 |
20090001385 | APPARATUS AND METHOD FOR MODULATING PHOTON OUTPUT OF A QUANTUM DOT LIGHT EMITTING DEVICE - An apparatus is provided for modulating the photon output of a plurality of free standing quantum dots. The apparatus comprises a first electron injection layer ( | 2009-01-01 |
20090001386 | Semiconductor device and method of manufacturing the same - The present invention provides a semiconductor device realizing reduced occurrence of a defect such as a crack at the time of adhering elements to each other. The semiconductor device includes a first element and a second element adhered to each other. At least one of the first and second elements has a pressure relaxation layer on the side facing the other of the first and second elements, and the pressure relaxation layer includes a semiconductor part having a projection/recess part including a projection projected toward the other element, and a resin part filled in a recess in the projection/recess part. | 2009-01-01 |
20090001387 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide a method for manufacturing a large semiconductor device which easily operates normally and has excellent current characteristics. A first single-crystal semiconductor layer is provided over an insulating substrate. Then, the first single-crystal semiconductor layer is processed into an island shape. After that, a second single-crystal semiconductor layer is provided over the insulating substrate so as to overlap with part of a region where the first single-crystal semiconductor layer is provided. After that, the second single-crystal semiconductor layer is processed into an island shape. Thus, defects at joint portions in the case of providing the single-crystal semiconductor layers can be reduced. | 2009-01-01 |
20090001388 | Semiconductor Display Device and Method for Manufacturing The Same - To provide a semiconductor display device capable of being easily manufactured and a method for manufacturing the semiconductor display device. | 2009-01-01 |
20090001389 | HYBRID VERTICAL CAVITY OF MULTIPLE WAVELENGTH LEDS - A solid state device ( | 2009-01-01 |
20090001390 | Matrix material including an embedded dispersion of beads for a light-emitting device - A light-emitting device has a light source disposed on a support. A matrix material including a dispersion of beads is disposed over the light source. The refractive index of the beads is different from the refractive index of the matrix material. The light source may include an LED. The matrix material may include a lens. | 2009-01-01 |
20090001391 | LIGHT EMITTING PANEL, DISPLAY DEVICE AND LIGHT SOURCE DEVICE - A light emitting panel includes a plurality of light emitting element arrays each of which has a plurality of light emitting elements arranged in a plane. The light emitting element arrays are configured so that an arrangement plane of the light emitting elements of one light emitting element array is overlapped with another arrangement plane of the light emitting elements of another light emitting element array in substantially parallel to each other, and so that the light emitting elements of one light emitting element array and the light emitting elements of another light emitting element array emit lights to the same side. | 2009-01-01 |
20090001392 | LIGHT EMITTING DEVICE - A light emitting device is provided. The light emitting device comprises: a package body comprising a multilayer cavity; a first light emitting part comprising a first light emitting device in a first cavity of a first layer area of the multilayer cavity; and a second light emitting part comprising a second light emitting device in a second cavity of a second layer area higher than the first layer area. | 2009-01-01 |
20090001393 | MULTI-LIGHT EMITTING DIODE PACKAGE - A multi-LED package includes a heat sink including a primary slug and a secondary slug separated from each other, a primary LED chip mounted on the primary slug, one or more secondary LED chips mounted on the secondary slug, a lead frame structure electrically wired to the primary and secondary LED chips, and a phosphor covering at least a part of the primary LED chip. Another multi-LED package includes a heat sink having an upper surface and partitions protruding therefrom, a primary LED chip mounted inside the partitions, one or more secondary LED chips mounted outside the partitions, a lead frame structure electrically wired to the primary and secondary LED chips, and a phosphor covering at least a part of the primary LED chip. | 2009-01-01 |
20090001394 | Semiconductor structure combination for epitaxy of semiconductor optoelectronic device - The invention discloses a semiconductor structure combination for the epitaxy of a semiconductor optoelectronic device and manufacture thereof. The semiconductor structure combination according to the invention includes a substrate and a semiconductor material. The substrate has an upper surface and a recess formed on the upper surface. The sidewalls of the recess provide at least one first site for the growth of at least one first epitaxial crystal of the semiconductor material toward a first preferred orientation. A bottom of the recess provides a second site for the growth of a second epitaxial crystal of the semiconductor material toward the first preferred orientation. Flat regions adjacent to the recess provide at least one third site for the growth of at least one third epitaxial crystal of the semiconductor material toward the first preferred orientation. | 2009-01-01 |
20090001395 | LIGHT EMITTING DIODE DEVICE AND FABRICATION METHOD THEREOF - The invention provides a light emitting diode device and a fabrication method thereof. The device comprises a pair of electrodes and one of which is electrically contacted with a holder, an LED chip fixed in the holder, a wrapping material formed in the holder and covering the LED chip, and a plurality of nanocrystals having a quantum dot state dispersed in the wrapping material. The nanocrystals satisfy the formula, Zn | 2009-01-01 |
20090001396 | Semiconductor element mount, semiconductor device, imaging device, light emitting diode component and light emitting diode - A collective substrate has through-holes. The through-holes each have an interior surface including taper surfaces which are tapered as having an opening size progressively decreasing from a main surface and an external connection surface toward a minimum size hole portion. A semiconductor element mount includes an insulative member cut out of the collective substrate. An imaging device includes an imaging element mounted in a region surrounded by a frame which is bonded to the main surface of the insulative member and closed by a cover. A light emitting diode component includes a light emitting element mounted on the main surface of the insulative member with the minimum size hole portion of the through-hole being filled with an electrically conductive material, the light emitting element being sealed with a fluorescent material and/or a protective resin. | 2009-01-01 |
20090001397 | Method and device for providing circumferential illumination - A light source device, comprising at least one light emitting element, an optical for distributing light emitted by the light emitting element(s) into a waveguide material which is in optical communication with the optical funnel, and at least one reflector contacting the waveguide material for redirecting light back into the waveguide material such as to reduce illumination exiting the waveguide material in any direction other than a circumferential direction. | 2009-01-01 |
20090001398 | Semiconductor light emitting device and method of manufacturing the same - There are provided a semiconductor light emitting device that can be manufactured by a simple process and has excellent light extraction efficiency and a method of manufacturing a semiconductor light emitting device that has high reproducibility and high throughput. A semiconductor light emitting device having a substrate and a lamination in which a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer are sequentially laminated onto the substrate according to an aspect of the invention includes a silica particle layer; and an uneven part formed at a lower part of the silica particle layer. | 2009-01-01 |
20090001399 | OPTICAL DESIGNS FOR HIGH-EFFICACY WHITE-LIGHT EMITTING DIODES - A method for increasing the luminous efficacy of a white light emitting diode (WLED), comprising introducing optically functional interfaces between an LED die and a phosphor, and between the phosphor and an outer medium, wherein at least one of the interfaces between the phosphor and the LED die provides a reflectance for light emitted by the phosphor away from the outer medium and a transmittance for light emitted by the LED die. Thus, a WLED may comprise a first material which surrounds an LED die, a phosphor layer, and at least one additional layer or material which is transparent for direct LED emission and reflective for the phosphor emission, placed between the phosphor layer and the first material which surrounds the LED die. | 2009-01-01 |
20090001400 | TWO DIMENSIONAL LIGHT SOURCE USING LIGHT EMITTING DIODE AND LIQUID CRYSTAL DISPLAY DEVICE USING THE TWO DIMENSIONAL LIGHT SOURCE - A two-dimensional light source includes a base substrate having holes, wires disposed on a lower surface of the base substrate, a light emitting diode (LED) chip disposed on an upper surface of the base substrate, plugs that connect two electrodes of the LED chip to the wires through the holes, a buffer layer covering the LED chip, and an optical layer that is disposed on the buffer layer and has an optical pattern formed at a portion of the optical layer corresponding to the LED chip. | 2009-01-01 |
20090001401 | Semiconductor Light Emitting Diode - Provided is a semiconductor light emitting diode, in which a plurality of upper electrodes is formed on a surface of an upper doping layer or an emission layer and at least one lower electrode is formed on a surface of a lower doping layer or a substrate in a silicon-based light emitting diode or a nitride-based light emitting diode to enhance a spreading characteristic of current applied to the electrodes, thereby maximizing an emitting area of the emission layer and inducing an emission having a uniform intensity on an entire surface of the emission layer to further enhance the luminous efficiency of the light emitting diode. | 2009-01-01 |
20090001402 | Semiconductor element and method of making the same - A semiconductor light-emitting element includes a nitride semiconductor layer with an active layer. The nitride semiconductor layer has a main surface formed with a first bonding layer made of gold or an alloy of gold and tin. The first bonding layer is bonded to a second bonding layer made of gold or an alloy of gold and tin. The second bonding layer is bonded to a support layer which has a thermal conductivity not smaller than 100 W/mK. The first bonding layer and the second bonding layer have a total thickness not smaller than 5 μm. | 2009-01-01 |