Class / Patent application number | Description | Number of patent applications / Date published |
324762080 | Bipolar transistor | 15 |
20110193586 | Alternating Current (AC) Stress Test Circuit, Method for Evaluating AC Stress Induced Hot Carrier Injection (HCI) Degradation, and Test Structure for HCI Degradation Evaluation - An AC stress test circuit for HCI degradation evaluation in semiconductor devices includes a ring oscillator circuit, first and second pads, and first and second isolating switches. The ring oscillator circuit has a plurality of stages connected in series to form a loop. Each of the stages comprises a first node and a second node. The first and second isolating switches respectively connect the first and second pads to the first and second nodes of a designated stage and both are switched-off during ring oscillator stressing of the designated stage. The present invention also provides a method of evaluating AC stress induced HCI degradation, and a test structure. | 08-11-2011 |
20120105094 | METHOD OF MANUFACTURING A SiC BIPOLAR JUNCTION TRANSISTOR AND SiC BIPOLAR JUNCTION TRANSISTOR THEREOF - A method of manufacturing a silicon carbide (SiC) bipolar junction transistor (BJT) and a SiC BJT are provided. The SiC BJT comprises an emitter region, a base region and a collector region. The collector region is arranged on a substrate having an off-axis orientation of about 4 degrees or lower. Further, a defect termination layer (DTL) is arranged between the substrate and the collector region. A thickness and a doping level of the DTL are configured to terminate basal plane dislocations in the DTL and reduce the growth of defects from the DTL to the collector region. At least some of the embodiments are advantageous in that SiC BJTs with improved stability are provided. Further, a method of evaluating the degradation performance of a SiC BJT is provided. | 05-03-2012 |
20120112785 | VOLTAGE DETECTION DEVICE AND SYSTEM - A voltage detection device including a multiplexer provided with a plurality of input channels connected to respective battery cells and an output channel connected to an analog-to-digital (AD) converter. The multiplexer is further provided with an additional input channel that is connected to a voltage source that supplies a fault detection voltage. A multiplexer controller is triggered by an input trigger signal to instruct the multiplexer to sequentially connect the input channels and the additional input channel to the output channel according to a predetermined voltage detection sequence. An abnormality detector determines that there exists an abnormality in the multiplexer controller on the basis of an output of the AD converter when the AD converter detects the fault detection voltage at a timing different from a normal timing defined by the voltage detection sequence. This enables the voltage detection device to self-diagnose the multiplexer controller. | 05-10-2012 |
20120306528 | CIRCUIT DEVICE HAVING A SEMICONDUCTOR COMPONENT - An electrical circuit device includes a semiconductor component which has power terminals and a control terminal electrically insulated from the power terminals, for applying a control voltage, and a control terminal contact surface for contacting the control terminal for measuring the electrical behavior of the semiconductor component. A connection device is provided, via which the control terminal is electrically connectable to a series device, the connection device being transferable from a nonconductive state into a conductive state, in which the control terminal is connected to the series device. | 12-06-2012 |
20120319720 | TEST CIRCUIT FOR BIPOLAR JUNCTION TRANSISTOR - A test circuit includes a first test circuit. The first test circuit includes a first light-emitting diode (LED) and a first resistor. An anode of the first LED is connected to a power supply. A cathode of the first LED is connected to a collector of a bipolar junction transistor (BJT) through the first resistor. An emitter of the BJT is grounded. A base of the BJT is connected to the power supply. A type of the BJT can be determined according to status of the first LED. | 12-20-2012 |
20140035611 | POWER SWITCH WAFER TEST METHOD - A wafer test method of a power switch wherein a main IGBT and a current detecting IGBT that detects a current value of the main IGBT are integrally formed on the same semiconductor substrate is such that there is provided resistance means that causes an emitter current of the current detecting IGBT to flow through an emitter terminal of the main IGBT, the main IGBT and current detecting IGBT are energized simultaneously, thereby applying a constant current to a common collector terminal of the main IGBT and current detecting IGBT, and a current ratio (main current/detected current) between a main current of the main IGBT and a detected current of the current detecting IGBT is calculated from the current flowing through the current detecting IGBT, obtained from the voltage across the resistance means, and the constant current. | 02-06-2014 |
20140070839 | SEMICONDUCTOR DEVICE AND METHOD OF DETECTING WIRE OPEN FAILURE THEREOF - In a semiconductor device, two series connections are arranged to be connected between respective split emitter electrodes and a gate electrode with Zener diode units connected in series to respective resistors, with the cathode sides thereof directed to the gate electrode side. The numbers of the Zener diodes in the Zener diode units in the respective series connections are different between the respective Zener diode units. Thus, a semiconductor device can be provided which is capable of detecting an open failure of a bonding wire regardless of the number of a plurality of the bonding wires connected in parallel, by a simple electrical test to make it possible to reliably sort out a semiconductor device with a wire open failure at an early stage. | 03-13-2014 |
20140368232 | INSULATED GATE BIPOLAR TRANSISTOR FAILURE MODE DETECTION AND PROTECTION SYSTEM AND METHOD - An assembly including an insulated gate bipolar transistor (IGBT) is provided. The IGBT is coupled with a gate driver for receiving a gating signal to drive the IGBT and providing a feedback signal of the IGBT which indicates a change of a collector-emitter voltage of the IGBT. The assembly further includes a failure mode detection unit for determining whether the IGBT is faulted based on a timing sequence of the gating signal and feedback signal. The failure mode detection unit is capable of differentiating fault types including a gate driver fault, a failed turn-on fault, a short-circuit fault, a turn-on over-voltage fault and a turn-off over-voltage fault. Accordingly, an IGBT failure mode detection method is also provided. | 12-18-2014 |
20150301103 | Precision Measurement of Voltage Drop Across a Semiconductor Switching Element - An apparatus provides precision measurement of voltage drop across a semiconductor switching element of a subsea device. The apparatus includes (a) a first circuit path having a first protective element, a first impedance element and a voltage source, wherein the first circuit path is configured to be connected between the first terminal and the second terminal of the semiconductor switching element, (b) a second circuit path formed between a first output terminal and a second output terminal, the second circuit path having a second protective element and a second impedance element, wherein the second protective element is identical to the first protective element, and wherein the second impedance element is identical to the first impedance element, and (c) a regulating circuit configured to regulating the current in the second circuit path such that said current in the second circuit path is equal to the current in the first circuit path, wherein the voltage drop between the first terminal and the second terminal of the semiconductor switching element equals the difference between the voltage provided by the voltage source and the voltage drop between the first output terminal and the second output terminal. | 10-22-2015 |
20150316602 | APPARATUS AND METHOD FOR MONITORING OPERATION OF AN INSULATED GATE BIPOLAR TRANSISTOR - Operation of an insulated gate bipolar transistor (IGBT) is monitored by an apparatus that has a capacitor connected between a collector of the IGBT and an input node. A processing circuit, coupled to the input node, responds to current flowing through the capacitor by providing an indication whether a voltage level at the collector is changing and the rate of that change. The processing circuit also employs the capacitor current to provide an output voltage that indicates the voltage at the IGBT collector. | 11-05-2015 |
20160025800 | SYSTEMS AND METHODS FOR TEST CIRCUITRY FOR INSULATED-GATE BIPOLAR TRANSISTORS - A saturation edge detection circuit for testing a saturation level in an insulated gate bipolar transistor (“IGBT”) includes a first input operable to receive an on signal, a second input coupled to an IGBT driver circuit, and an output coupled to a control electrode of the IGBT. The output indicates a change in a state of a saturation voltage associated with the IGBT during operation of the IGBT. | 01-28-2016 |
20160025802 | SYSTEMS AND METHODS FOR TEST CIRCUITRY FOR INSULATED-GATE BIPOLAR TRANSISTORS - A driver circuit for testing a saturation level in an insulated gate bipolar transistor (“IGBT”) includes a comparator having a first input coupled to a reference voltage and a second input coupled to a saturation test node, and a first transistor having a first current electrode coupled to the first input of the comparator, a second current electrode coupled to a supply voltage, and a control electrode coupled to a first output of a test circuit. The first output is associated with a test initiation function of an internal test process. A second transistor has a first current electrode coupled to a control electrode of the IBGT transistor, a second current electrode coupled to the supply voltage, and a control electrode coupled to a second output of the test circuit. The second output is associated with an over-current indication of the internal test process. | 01-28-2016 |
20160054376 | WIRING CORE STRUCTURE, SEMICONDUCTOR EVALUATION DEVICE AND SEMICONDUCTOR DEVICE - A wound wire is wound around a core assembly so that both ends are short-circuited. In a coupling pin insertion state in which a coupling pin is inserted in a through hole of the core assembly, outer-peripheral space parts of respective divided core portions of the core assembly are disposed so as to overlap in plan view. Consequently, an air gap is formed in a part of a side surface of the core assembly. Before formation of a covering member, a main wire is caused to pass through the air gap and is thus disposed in a wiring hole of the core assembly. Then, the covering member for closing the air gap is provided on an outer peripheral surface side of the core assembly including the air gap so that a core structure is obtained. | 02-25-2016 |
20160109504 | CIRCUIT AND METHOD FOR TESTING TRANSISTOR(S) - Disclosed is a circuit and method for testing transistor(s). The circuit is used for testing a set of transistors including at least two transistors, wherein the circuit comprises: a first power supply voltage terminal connected to first electrodes of the respective transistors; a first control signal terminal connected to control electrodes of the respective transistors; and a set of test terminals including at least two test terminals, wherein the test terminals are connected to second electrodes of the corresponding transistors, respectively. According to the circuit disclosed in the present disclosure, it can be achieved that the bias voltages can be applied to the plurality of transistors to be tested simultaneously. Further, the current characteristics of the transistors are tested respectively, which avoids applying the bias voltage to the plurality of transistor to be tested one by one, thus reducing the time consumed in test and improving the testing efficiency | 04-21-2016 |
20160124037 | SHORT-CIRCUIT DETECTION CIRCUITS, SYSTEM, AND METHOD - Systems, circuits, and methods for detecting short circuit events during operation of an Insulated-Gate Bipolar Transistor (IGBT) from are provided. A short-circuit detection circuit is described is capable of creating an adaptive blanking time during which a short-circuit detector is blind to short-circuit events for the IGBT and after which the short-circuit detector is allowed to monitor and detect the short-circuit events for the IGBT. | 05-05-2016 |