Entries |
Document | Title | Date |
20080214422 | THINNER COMPOSITION AND METHOD OF REMOVING PHOTORESIST USING THE SAME - A thinner composition includes propylene glycol ether acetate, methyl 2-hydroxy-2-methyl propionate, and an ester compound such as ethyl lactate, ethyl 3-ethoxy propionate or a mixture thereof. | 09-04-2008 |
20080227678 | Cleaning Liquid for Lithography and Method of Cleaning Therewith - A cleaning liquid for lithography that exhibits equally excellent cleaning performance for resists of a wide variety of compositions, such as various resists for i-line, KrF and ArF, silicic resist and chemical amplification type positive resist, and that excels in post-treatment dryability, being free from any deterioration of resist performance by cleaning. There is provided a cleaning liquid for lithography, comprising at least one member (A) selected from among lower alkyl esters of acetic acid and propionic acid and at least one member (B) selected from among ketones having 5 to 7 carbon atoms per molecule in a mass ratio of (A):(B) of 4:6 to 7:3. | 09-18-2008 |
20080242574 | Metal and Dielectric Compatible Sacrificial Anti-Reflective Coating Cleaning and Removal Composition - A liquid removal composition and process for removing sacrificial anti-reflective coating (SARC) material from a substrate having same thereon. The liquid removal composition includes at least one fluoride-containing compound, at least one organic solvent, optionally water, and optionally at least one chelating agent. The composition achieves at least partial removal of SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric materials employed in the semiconductor architecture. | 10-02-2008 |
20080242575 | Treating liquid for photoresist removal, and method for treating substrate - Disclosed are a treating liquid for photoresist removal, containing (a) an oxidizing agent (e.g., aqueous hydrogen peroxide), (b) at least one selected from alkylene carbonates and their derivatives (e.g., propylene carbonate), and (c) water; and a method for treating with the treating liquid a substrate having a photoresist film deteriorated after dry-etching treatment thereof or a substrate optionally subjected to plasma-ashing treatment after the dry-etching treatment, and then treating it with a photoresist-stripping liquid for stripping off the photoresist. | 10-02-2008 |
20080261846 | Compositions for the Removal of Post-Etch and Ashed Photoresist Residues and Bulk Photoresist - The invention provides cleaning compositions for cleaning microelectronic substrates that are able to essentially completely clean such substrates and inhibit metal corrosion or produce essentially no corrosion of the metal elements of such substrates, and to do so at relatively short cleaning times and relatively low temperatures compared to the cleaning times required for prior art alkaline-containing cleaning compositions. The invention also provides method of using such cleaning compositions to clean microelectronic substrates without producing any significant corrosion of the metal elements of the microelectronic substrate. The cleaning compositions of this invention comprise (a) at least one organic solvent, (b) at least one unneutralized inorganic phosphorus-containing acid, and (c) water. The cleaning compositions of this invention optionally can have present in the compositions other components, such as for example surfactants, metal complexing or chelating agents, corrosion inhibitors, and the like. The cleaning compositions of this invention are characterized by an absence of organic amines, hydroxylamines or other strong bases such as ammonium bases and the like that would neutralize the inorganic phosphorus-containing acid component. The cleaning and residue removal compositions of this invention are especially suitable for cleaning microelectronic substrates containing aluminum, titanium, and tungsten. | 10-23-2008 |
20080261847 | Composition and Method for Recycling Semiconductor Wafers Having Low-K Dielectric Materials Thereon - A removal composition and process for removing low-k dielectric material, etch stop material, and/or metal stack material from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves at least partial removal of the material(s) from the surface of the microelectronic device structure having same thereon, for recycling and/or reuse of said structure, without damage to the underlying polysilicon or bare silicon layer employed in the semiconductor architecture. | 10-23-2008 |
20080269096 | Formulations for Cleaning Ion-Implanted Photoresist Layers from Microelectronic Devices - A method and composition for removing bulk and ion-implanted photoresist and/or post-etch residue material from densely patterned microelectronic devices is described. The composition includes a co-solvent, a chelating agent, optionally an ion pairing reagent, and optionally a surfactant. The composition may further include dense fluid. The compositions effectively remove the photoresist and/or post-etch residue material from the microelectronic device without substantially over-etching the underlying silicon-containing layer(s) and metallic interconnect materials. | 10-30-2008 |
20080287333 | Non-Aqueous Microelectronic Cleaning Compositions Containing Fructose - Back end photoresist strippers and residue compositions are provided by non-aqueous compositions that are essentially non-corrosive toward copper as well as aluminum and that comprise a polar organic solvent, a hydroxylated amine, and as a corrosion inhibitor fructose. | 11-20-2008 |
20090005283 | Stabilized, Non-Aqueous Cleaning Compositions for Microelectronics Substrates - Non-aqueous stripping and cleaning compositions for cleaning microelectronics devices, the composition having a least one organic sulfur-containing polar compound as a stripping solvent, at least one water-free source of a strong hydroxide base, and at least one hydroxypyridine stabilizing agent to inhibit detrimental side reactions. | 01-01-2009 |
20090011967 | Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials - A composition for removing resists and etching residue from substrates containing at least one nucleophilic amine compound having oxidation and reduction potentials, at least one organic solvent, water and, optionally, a chelating agent is described. The chelating agent is preferred to be included since it provides added stability and activity to the cleaning composition so that the composition has long term effectiveness. If a chelating agent is not present, the composition, while providing for adequate stripping and cleaning upon initial use of the composition following mixing, has only short term stability. In this latter instance, the nucleophilic amine compound and organic solvent components of the composition preferably are maintained separate from each other until it is desired to use the composition. Thereafter, the components are combined. Following use of the composition, the non-used portion of the composition can be disposed of or be reactivated by the addition of a chelating agent. | 01-08-2009 |
20090029893 | Cleaning Liquid For Lithography and Cleaning Method Using Same - Disclosed is a cleaning liquid for lithography which is characterized by containing a mixed organic solvent which is obtained by mixing (A) at least one solvent selected from ketone organic solvents and glycol ether organic solvents, (B) at least one solvent selected from lactone organic solvents and (C) at least one solvent selected from alkoxy benzenes and aromatic alcohols. This cleaning liquid is highly safe and does not have adverse effects on the environment or the human body, while having basic characteristics necessary for a cleaning liquid for lithography. In addition, this cleaning liquid can be stably supplied at low cost. | 01-29-2009 |
20090029894 | METHOD FOR WASHING DEVICE SUBSTRATE - The present invention provides a washing method for a device substrate, capable of sufficiently removing a resist attached to a device substrate, particularly a resist attached to fine pore portions of a pattern having a large aspect ratio. | 01-29-2009 |
20090036344 | REDUCED METAL ETCH RATES USING STRIPPER SOLUTIONS CONTAINING METAL SALTS - Resist stripping agents, useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with reduced metal etch rates, particularly copper etch rates, are provided with methods for their use. The preferred stripping agents contain low concentrations of a copper or cobalt salt with or without an added amine to improve solubility of the copper or cobalt salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods. | 02-05-2009 |
20090082240 | STRIPPING LIQUID FOR SEMICONDUCTOR DEVICE, AND STRIPPING METHOD - A stripping liquid for a semiconductor device is provided that includes an aqueous solution containing a quaternary ammonium hydroxide, an oxidizing agent, an alkanolamine, and an alkali metal hydroxide. There is also provided a stripping method that includes a stripping liquid preparation step of preparing the stripping liquid and a stripping step of removing at least one deposit selected from the group consisting of a photoresist, an anti-reflection film, and an etching residue by means of the stripping liquid obtained in the stripping liquid preparation step. | 03-26-2009 |
20090099051 | Aqueous fluoride compositions for cleaning semiconductor devices - The present invention relates to dilute fluoride solutions and methods for cleaning plasma etch residue from semiconductor substrates including such dilute solutions. The compositions and methods according to the invention can advantageously provide both cleaning efficiency and material compatibility. | 04-16-2009 |
20090111726 | Compounds for Photoresist Stripping - A composition for removing undesired matter from a substrate, the composition comprising hydroxylamine or a hydroxylamine derivative, a quaternary ammonium compound and at least one polar organic solvent. The composition is capable of removing photoresist from wafer level packaging and solder bumping applications. | 04-30-2009 |
20090118153 | METALS COMPATIBLE POST-ETCH PHOTORESIST REMOVER AND/OR SACRIFICIAL ANTIREFLECTIVE COATING ETCHANT - A liquid removal composition and process for removing photoresist and/or sacrificial anti-reflective coating (SARC) material from a microelectronic device having same thereon. The liquid removal composition includes at least one organic quaternary base and at least one surface interaction enhancing additive. The composition achieves at least partial removal of photoresist and/or SARC material in the manufacture of integrated circuitry with minimal etching of metal species on the microelectronic device, such as copper and cobalt, and without damage to low-k dielectric materials employed in the microelectronic device architecture. | 05-07-2009 |
20090131295 | Compositions for Removal of Metal Hard Mask Etching Residues from a Semiconductor Substrate - Compositions for removing and cleaning resist, etching residues, planarization residues, metal fluorides and/or metal oxides from a substrate are provided, the composition including a metal ion-free fluoride compound and water. The resist, etching residues, planarization residues, metal fluorides and/or metal oxides are generated during one or more patterning processes during which a metal hard mask is used. | 05-21-2009 |
20090156453 | Non-aqueous, non-corrosive microelectronic cleaning compositions containing polymeric corrosion inhibitors - Photoresist strippers and cleaning compositions of this invention are provided by non-aqueous cleaning compositions that are essentially non-corrosive toward copper as well as aluminum and that comprise at least one polar organic solvent, at least one hydroxylated organic amine, and at least one corrosion inhibitor polymer having multiple hydroxyl- or amino-functional groups pendant from the polymer backbone. | 06-18-2009 |
20090163396 | Nanoelectronic and microelectronic cleaning compositions - Nanoelectronic and microelectronic cleaning compositions for cleaning nanoelectronic and microelectronic substrates under supercritical fluid state conditions, and particularly cleaning compositions useful with and having improved compatibility with nanoelectronic and microelectronic substrates characterized by silicon dioxide, sensitive low-κ or high-κ dielectrics and copper, tungsten, tantalum, nickel, gold, cobalt, palladium, platinum, chromium, ruthenium, rhodium, iridium, hafnium, titanium, molybdenum, tin and other metallization, as well as substrates of Al or Al(Cu) metallizations and advanced interconnect technologies, are provided by nanoelectronic and microelectronic cleaning compositions comprising nanoelectronic and microelectronic cleaning compositions of this invention are provided by compositions comprising: (1) a supercritical main fluid reaching a supercritical fluid state at a temperature of 250° C. or less and a pressure of 600 bars or less (592.2 atm, 8702.3 psi), and (2) as a secondary fluid, a modifier formulation selected from the following formulations: a) a formulation comprising: an oxidizing agent; a polar organic solvent selected from the group consisting of amides, sulfones, sulfolenes, selenones and saturated alcohols; and optionally other components; b) a silicate free formulation comprising: a polar organic solvent selected from the group consisting of amides, sulfones, selenones and saturated alcohols; a strong alkaline base; and optionally other components; c) a formulation comprising: from about 0.05% to 30% by weight of one or more non-ammonium producing strong base containing non-nucleophilic, positively charged counter ions; from about 0.5 to about 99.95% by weight of one or more corrosion inhibiting solvent compounds, said corrosion inhibiting solvent compound having at least two sites capable of complexing with metals; and optionally other components; d) a formulation comprising: from about 0.05 to 20% by weight of one or more non-ammonium producing, non-HF producing fluoride salt; from about 5 to about 99.95% by weight of water, organic solvent or both water and organic solvent; and optionally other components; and e) a formulation comprising: from about 0.05% to 30% by weight of one or more non-ammonium producing strong base containing non-nucleophilic, positively charged counter ions; from about 5 to about 99.95% by weight of one or more steric hindered amide solvents; and optionally other components. | 06-25-2009 |
20090176677 | Treating liquid for photoresist removal, and method for treating substrate - Disclosed are a treating liquid for photoresist removal, containing (a) an oxidizing agent (e.g., aqueous hydrogen peroxide), (b) at least one selected from alkylene carbonates and their derivatives (e.g., propylene carbonate), and (c) water; and a method for treating with the treating liquid a substrate having a photoresist film deteriorated after dry-etching treatment thereof or a substrate optionally subjected to plasma-ashing treatment after the dry-etching treatment, and then treating it with a photoresist-stripping liquid for stripping off the photoresist. | 07-09-2009 |
20090186793 | DYNAMIC MULTI-PURPOSE COMPOSITION FOR THE REMOVAL OF PHOTORESISTS AND METHOD FOR ITS USE - Improved dry stripper solutions for removing one, two or more photoresist layers from substrates are provided. The stripper solutions comprise dimethyl sulfoxide, a quaternary ammonium hydroxide, and an alkanolamine, an optional secondary solvent and less than about 3 wt. % water and/or a dryness coefficient of at least about 1. Methods for the preparation and use of the improved dry stripping solutions are additionally provided. | 07-23-2009 |
20090192065 | DENSE FLUID COMPOSITIONS FOR REMOVAL OF HARDENED PHOTORESIST, POST-ETCH RESIDUE AND/OR BOTTOM ANTI-REFLECTIVE COATING - A method and composition for removing hardened photoresist, post-etch photoresist, and/or bottom anti-reflective coating from a microelectronic device is described. The composition may include a dense fluid, e.g., a supercritical fluid, and a dense fluid concentrate including a co-solvent, optionally a fluoride source, and optionally an acid. The dense fluid compositions substantially remove the contaminating residue and/or layers from the microelectronic device prior to subsequent processing, thus improving the morphology, performance, reliability and yield of the microelectronic device. | 07-30-2009 |
20090215659 | COMPOSITION USEFUL FOR REMOVAL OF POST-ETCH PHOTORESIST AND BOTTOM ANTI-REFLECTION COATINGS - An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a microelectronic device having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one alkaline base, and deionized water. The composition achieves high-efficiency removal of hardened photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect to metal species on the substrate, such as copper, and without damage to low-k dielectric materials employed in the microelectronic device architecture. | 08-27-2009 |
20090281016 | LOW pH MIXTURES FOR THE REMOVAL OF HIGH DENSITY IMPLANTED RESIST - A method and low pH compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The low pH compositions include at least one mineral acid and at least one oxidizing agent. The low pH compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s). | 11-12-2009 |
20090281017 | Cleaning Composition - The invention relates to compositions and methods for cleaning integrated circuit substrates. The compositions are in the form of an aqueous solution and include a quaternary ammonium hydroxide compound and a chelating compound. The chelating compound includes either boric acid or at least one N-substituted aminocarboxylate selected from the group consisting of N-bis(2-hydroxyethyl)glycine(bicine), N-tris(hydroxymethyl)methyl glycine (tricine) and mixtures thereof, and can optionally include glycine, Iminodiacetic acid (IDA), Nitrilo trizacetic acid (NTA), Ethylenediammine Tetraacetic acid (EDTA), or mixtures thereof. | 11-12-2009 |
20090312216 | Photoresist Stripper Composition for Semiconductor Manufacturing - The present invention relates to a photoresist stripper composition for removing the photoresist in the manufacturing process of the semiconductor device. More particularly, the photoresist stripper composition comprises 3-20 wt % of hydrazine hydrate or amine compound; 20˜40 wt % of polar solvent; 0.01-3 wt % of corrosion inhibitor selected from the group consisting of imidazoline derivative, sulfide derivative, sulfoxide derivative, aromatic compound or aromatic compound with hydroxyl group; 0.01-5 wt % of monoalcohol compound of C2-C10; and 40-70 wt % of deionized water. The photoresist stripper composition for manufacturing the semiconductor can remove the photoresist film thermoset by hard bake, dry etching, ashing or ion implantation and denatured by the metallic by-product etched from the bottom metallic film in said process at low temperature easily and quickly, and minimize the corrosion of the bottom metallic wiring in the removing process of the photoresist. | 12-17-2009 |
20090318323 | SOLVENT COMPOSITIONS CONTAINING CHLOROFLOROOLEFINS OR FLUOROOLEFINS - Compositions and methods based on the use of fluoroalkene containing from 3 to 4 carbon atoms and at least one carbon-carbon double bond, such as HFO-1214, HFO-HFO-1233, or HFO-1354, having properties highly beneficial in solvent cleaning applications. | 12-24-2009 |
20100009885 | COMPOSITION FOR REMOVING A PHOTORESIST, METHOD OF PREPARING THE COMPOSITION, METHOD OF REMOVING A PHOTORESIST AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE COMPOSITION - A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: | 01-14-2010 |
20100022426 | Photoresist stripping solution - Disclosed is a photoresist stripping solution consisting essentially of (a) a quaternary ammonium hydroxide (e.g., tetramethylammonium hydroxide), (b) at least one water-soluble organic solvent selected from glycols and glycol ethers (e.g., propylene glycol, ethylene glycol, diethylene glycol monobutyl ether), and (c) a non-amine water-soluble organic solvent (e.g., dimethyl sulfoxide, N-methyl-2-pyrrolidone). The photoresist stripping solution of the invention has an excellent photoresist strippability, not causing damage of swelling/coloration to acrylic transparent films used in production of liquid-crystal panels and not causing damage to electrode materials. In particular, it has an excellent photoresist strippability to remove even a thick-film negative photoresist (photosensitive dry film) used in production of semiconductor chip packages (especially, wafer-level chip size packages, W-CSP), not causing damage to copper. | 01-28-2010 |
20100035786 | Peroxide Activated Oxometalate Based Formulations for Removal of Etch Residue - Highly alkaline, aqueous formulations including (a) water, (b) at least one metal ion-free base at sufficient amounts to produce a final formulation alkaline pH, (c) from about 0.01% to about 5% by weight (expressed as % SiO | 02-11-2010 |
20100048443 | LIQUID COMPOSITION FOR REMOVING PHOTORESIST RESIDUE AND POLYMER RESIDUE - Provided is a liquid composition for, at a low temperature in a short time, removing a photoresist residue and a polymer residue generated in a semiconductor circuit element manufacturing process A residue removing method using such composition is also provided. The composition removes the photoresist residue and/or the polymer residue generated in the manufacturing process of a semiconductor circuit element having a metal wiring. The composition includes a fluorine compound of 0.5-3.0 mass % and water not over 30 mass %, and has a pH of 4 or less. | 02-25-2010 |
20100056410 | COMPOSITIONS AND METHODS FOR THE REMOVAL OF PHOTORESIST FOR A WAFER REWORK APPLICATION - Compositions useful in reworking microelectronic device wafers, i.e., removing photoresist from rejected wafers, without damaging underlying layers and structures such as cap layers, interlevel dielectric layers, etch stop layers and metal interconnect material. The semi-aqueous compositions include at least one alkali and/or alkaline earth metal basic salt, at least one organic solvent, water, optionally at least one quaternary ammonium basic salt, optionally at least one metal corrosion inhibitor and optionally at least one water-soluble polymer surfactant. | 03-04-2010 |
20100056411 | Treating liquid for photoresist removal and method for treating substrate - Disclosed are a treating liquid for photoresist removal, containing (a) an oxidizing agent (e.g., aqueous hydrogen peroxide), (b) at least one selected from alkylene carbonates and their derivatives (e.g., propylene carbonate), and (c) water; and a method for treating with the treating liquid a substrate having a photoresist film deteriorated after dry-etching treatment thereof or a substrate optionally subjected to plasma-ashing treatment after the dry-etching treatment, and then treating it with a photoresist-stripping liquid for stripping off the photoresist. | 03-04-2010 |
20100105594 | PROCESS OF PURIFICATION OF AMIDOXIME CONTAINING CLEANING SOLUTIONS AND THEIR USE - The invention relates to processes for producing and using amidoxime compounds with low trace metal impurities. The invention further relates to compositions comprising amidoxime compounds with low trace metal impurities, such compositions useful for cleaning or removing residues from semiconductor substrates and/or equipment. | 04-29-2010 |
20100105595 | COMPOSITION COMPRISING CHELATING AGENTS CONTAINING AMIDOXIME COMPOUNDS - The present invention is a novel aqueous cleaning solution for use in semiconductor front end of the line (FEOL) manufacturing process wherein the cleaning solution comprises at least one amidoxime compound. | 04-29-2010 |
20100137181 | COMPOSITIONS FOR REDUCING METAL ETCH RATES USING STRIPPER SOLUTIONS CONTAINING COPPER SALTS - Resist stripping agents, useful for fabricating circuits and/or forming electrodes on semiconductor devices for semiconductor integrated circuits with reduced metal etch rates, particularly copper etch rates, are provided with methods for their use. The preferred stripping agents contain low concentrations of a copper salt with or without an added amine to improve solubility of the salt. Further provided are integrated circuit devices and electronic interconnect structures prepared according to these methods. | 06-03-2010 |
20100279910 | METHOD FOR MAKING A PHOTORESIST STRIPPING SOLUTION COMPRISING AN ORGANIC SULFONIC ACID AND AN ORGANIC HYDROCARBON SOLVENT - An improved method for making a photoresist stripping solution for a metal-containing semi-conductor substrate where the stripping solution comprises a blend of at least one organic sulfonic acid with a halogen-free hydrocarbon solvent wherein concentrations of trace amounts of residual sulfuric acid and sulfur trioxide in the blend are reduced to very low levels. | 11-04-2010 |
20110015108 | Aqueous Buffered Fluoride-Containing Etch Residue Removers and Cleaners - The invention relates to aqueous, buffered, fluoride containing compositions having a pH of greater than 7.0 to about 11.0. In certain embodiments, the buffered compositions have an extended worklife because pH dependent attributes such as oxide and metal etch rates are stable so long as the pH remains stable. | 01-20-2011 |
20110021400 | SEMICONDUCTOR SURFACE TREATING AGENT COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SURFACE USING THE SEMICONDUCTOR SURFACE TREATING AGENT COMPOSITION - An object of the present invention is to provide a semiconductor surface treating agent composition, which can realize easy removing of an anti-reflection coating layer in a production process of a semiconductor device or the like at a low temperature in a short time, a method for treating a semiconductor surface using the same, and further a semiconductor surface treating agent composition, which can realize not only removing of both layer of an anti-reflection coating layer and a resist layer, but can realize even removing of a cured resist layer produced in an etching process, and a method for treating a semiconductor surface using the same. The semiconductor surface treating agent composition of the present invention is characterized by comprising a compound which generates a fluorine ion in water, a carbon radical generating agent, and water and optionally an organic solvent, and the method for treating a semiconductor surface of the present invention is characterized by using the composition. | 01-27-2011 |
20110034362 | Semi-Aqueous Stripping and Cleaning Formulation for Metal Substrate and Methods for Using Same - The present invention relates to semi-aqueous formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, as well as contaminations. The formulation comprises: an alkanolamine, a water miscible organic co-solvent, a quarternary ammonium compound, a non-free acid functionality corrosion inhibitor, and remainder water. The pH is greater than 9. | 02-10-2011 |
20110039747 | COMPOSITION AND METHOD FOR REMOVING ION-IMPLANTED PHOTORESIST - A method and mineral acid-containing compositions for removing bulk and/or hardened photoresist material from microelectronic devices have been developed. The mineral acid-containing composition includes at least one mineral acid, at least one sulfur-containing oxidizing agent, and optionally at least one metal ion-containing catalyst. The mineral acid-containing compositions effectively remove the hardened photoresist material while not damaging the underlying silicon-containing layer(s). | 02-17-2011 |
20110046036 | Post Plasma Etch/Ash Residue and Silicon-Based Anti-Reflective Coating Remover Compositions Containing Tetrafluoroborate Ion - A microelectronic cleaning compositions of: a) from about 80% to about 99% by weight of the composition of at least one organic sulfone; b) from about 0.5% to about 19% by weight of the composition of water; and c) from about 0.5% to about 10% by weight of the composition of at least one component providing tetrafluoroborate ion, and d) optionally at least one polyhydric alcohol is especially useful to clean etch/ash residues from microelectronic substrates or device having both Si-based anti-reflective coatings and low-k dielectrics. | 02-24-2011 |
20110065622 | NOVEL NITRILE AND AMIDOXIME COMPOUNDS AND METHODS OF PREPARATION FOR SEMICONDUCTOR PROCESSING - Semiconductor processing compositions comprising amidoxime compounds having two or more amidoxime functional groups and their use in semiconductor processing to remove photoresist, polymeric materials, etching residues and copper oxides from semiconductor substrates, particularly substrates comprising copper, low-k dielectric material, titanium nitride, and/or titanium oxynitride. | 03-17-2011 |
20110098205 | COMPOSITION AND METHOD FOR CLEANING SEMICONDUCTOR SUBSTRATES - The compositions and methods herein relate to the method for the removal of residues and contaminants from metal or dielectric surfaces. Particularly, a composition and method of cleaning residues after chemical mechanical polishing of a copper or aluminum surface of the semiconductor substrates. A method of cleaning semiconductor substrates comprising contacting the substrates with a solution of water, and sufficient amount of alkyl diphosphonic acid comprising alkyl diphosphonic acid selected from the group of 1 hydroxyethane 1,1 diphosphonic acid, methylene disphosphonic acid, hydroxymethylene diphosphonic acid, dichloromethylene disphosphonic acid, hydroxycyclohexylmethylene disphosphonic acid, 1-hydroxy-3-aminopropane 1,1 diphosphonic acid, 1-hydroxy-4-aminobutane 1,1 diphosphonic acid mixed with dodecylbenzenesulfonic acid, xylenesulfonic acid, toluenesulfonic acid, phosphonoformic acid, sulfamic acid, 2-amino ethane sulfonic acid, or fluoroboric acid or an organic carboxylic acid and pH is adjusted to from greater than 6 to about 10 with a metal ion free base, and a surfactant. | 04-28-2011 |
20110118165 | COMPOSITION AND METHOD FOR TREATING SEMICONDUCTOR SUBSTRATE SURFACE - The present invention is directed to compositions and method of use for treating semiconductor substrate comprising a sulfonium compound and a nucleophilic amine in the fabrication of electronic devices. Optionally, the said composition further comprises a chelating agent, and solvent. The pH of the said solution can be adjusted with the addition of acid or base. The semiconductor manufacturing processes include steps for post etch residue, photoresist removal and steps during chemical mechanical planarization and post chemical mechanical planarization. | 05-19-2011 |
20110136717 | Formulations And Method For Post-CMP Cleaning - The present invention is a method of cleaning to removal residue in semiconductor manufacturing processing, comprising contacting a surface to be cleaned with an aqueous formulation having a polymer selected from the group consisting of acrylamido-methyl-propane sulfonate) polymers, acrylic acid-2-acrylamido-2-methylpropane sulfonic acid copolymer and mixtures thereof and a quaternary ammonium hydroxide having greater than 4 carbon atoms or choline hydroxide with a non-acetylinic surfactant. | 06-09-2011 |
20110207645 | Non-aqueous, non-corrosive microelectronic cleaning compositions containing polymeric corrosion inhibitors - Photoresist strippers and cleaning compositions of this invention are provided by non-aqueous cleaning compositions that are essentially non-corrosive toward copper as well as aluminum and that comprise at least one polar organic solvent, at least one hydroxylated organic amine, and at least one corrosion inhibitor polymer having multiple hydroxyl- or amino-functional groups pendant from the polymer backbone. | 08-25-2011 |
20110212866 | WATER-RICH STRIPPING AND CLEANING FORMULATION AND METHOD FOR USING SAME - The present invention relates to water-rich formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, residues from Al back-end-of-the-line interconnect structures, as well as contaminations. The formulation comprises: hydroxylamine; corrosion inhibitor containing a mixture of alkyl dihydroxybenzene and hydroxyquinoline; an alkanolamine, a water-soluble solvent or the combination of the two; and at least 50% by weight of water. | 09-01-2011 |
20110218134 | PHOTOSENSITIVE-RESIN REMOVER COMPOSITION AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME - A photosensitive-resin remover composition includes an amine compound and de-ionized water, an amount of the de-ionized water being about 45% to about 99% by weight based on a total weight of the composition. | 09-08-2011 |
20110245128 | COMPOSITION FOR REMOVING A PHOTORESIST AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE COMPOSITION - Provided are a composition for removing a photoresist and a method of manufacturing a semiconductor device using the composition. The composition includes about 60-90 wt % of dimethyl sulfoxide, about 10-30 wt % of a polar organic solvent, about 0.5-1.5 wt % of hydroxy alkyl ammonium and about 1-10 wt % of an amine containing no hydroxyl group. | 10-06-2011 |
20110287995 | RESIST REMOVER COMPOSITION AND METHOD FOR REMOVING RESIST USING SAME - There are provided a resist remover composition containing an amide solvent (A) represented by the following formula (1) and an organic amine compound (B), and a method for removing a resist using the resist remover composition, i.e., a resist remover composition that provides a sufficient removing capability even in a state where a resist is dissolved therein and is capable of being used for a prolonged period of time, and a method for removing a resist using the same. | 11-24-2011 |
20110306534 | MULTIPURPOSE ACIDIC, ORGANIC SOLVENT BASED MICROELECTRONIC CLEANING COMPOSITION - A cleaning composition for cleaning microelectronic or nanoelectronic devices, the cleaning composition having HF as the sole acid and sole fluoride compound in the composition, at least one primary solvent selected from the group consisting of sulfones and selenones, at least one polyhydroxyl alkyl or aryl alcohol co-solvent having metal ion complexing or binding sites, and water, and optionally at least one phosphonic acid corrosion inhibitor compound and the is free of amines, bases and other salts. | 12-15-2011 |
20120028871 | STRIPPING COMPOSITIONS FOR CLEANING ION IMPLANTED PHOTORESIST FROM SEMICONDUCTOR DEVICE WAFERS - A composition for removal of high dosage ion implanted photoresist from the surface of a semiconductor device, the composition having at least one solvent having a flash point >65° C., at least one component providing a nitronium ion, and at least one phosphonic acid corrosion inhibitor compound, and use of such a composition to remove high dosage ion implanted photoresist from the surface of a semiconductor device. | 02-02-2012 |
20120094888 | METHOD FOR REMOVING AN UNCURED PHOTOSENSITIVE COMPOSITION - A photosensitive composition remover used for removal of an uncured photosensitive composition, which remover includes 1 to 80 percent by mass of at least one type of aromatic hydrocarbon having 9 carbon atoms or more within the molecule. The photosensitive composition remover further includes an aprotic polar solvent and/or another solvent other than aprotic polar solvents. The photosensitive composition remover is effective for removal of an uncured photosensitive composition film deposited at the periphery, edges, or back of a substrate or removal of an uncured photosensitive composition deposited at the surface of system members or equipment in a process for forming a photosensitive composition film on a glass substrate, a semiconductor wafer, or the like. | 04-19-2012 |
20120108485 | MULTI-AGENT TYPE CLEANING KIT FOR SEMICONDUCTOR SUBSTRATES, CLEANING METHOD USING THE SAME AND METHOD OF PRODUCING SEMICONDUCTOR ELEMENT - A multi-agent type cleaning kit for applying to semiconductor substrates, which contains a foaming agent having an alkylene carbonate and a carbonic acid salt, a foaming aid having an acidic compound, and an oxidizing agent; at least the foaming agent is mixed with the foaming aid upon using for the cleaning of a semiconductor substrate, in combination with the oxidizing agent. | 05-03-2012 |
20120108486 | COMPOSITIONS AND METHODS FOR REMOVING ORGANIC SUBSTANCES - Compositions and methods useful for the removal of organic substances from substrates, for example, electronic device substrates such as microelectronic wafers or flat panel displays, are provided. A method is presented which applies a minimum volume of the composition as a coating to the inorganic substrate whereby sufficient heat is added and immediately rinsed with water to achieve complete removal. These compositions and methods are particularly suitable for removing and completely dissolving photoresists of the positive and negative varieties as well as thermoset polymers from electronic devices. | 05-03-2012 |
20120129747 | POST ION IMPLANT STRIPPER FOR ADVANCED SEMICONDUCTOR APPLICATION - The present invention relates to a substantially water-free photoresist stripping composition. Particularly, the present invention relates to a substantially water-free photoresist stripping composition useful in removing the photoresist after ion-implant process, comprising: (a) an amine, (b) an organic solvent A, and (c) a co-solvent, wherein the composition is substantially water-free (<3 wt % H | 05-24-2012 |
20120149622 | PHOTORESIST STRIPPING AGENT COMPOSITION - Disclosed is a stripping agent that can easily strip a photoresist residue and the like at a low temperature in a short time and, at the same time, does not corrode a wiring material at all and has no need to use an organic solvent such as alcohol as a rinsing liquid. The stripping agent disclosed herein comprises 5 to 50% by mass of a specific amine, 30 to 65% by mass of a specific acid amide, 0.1 to 15% by mass of a saccharide or a sugar alcohol, and 1 to 64.5% by mass of water. | 06-14-2012 |
20120157367 | COMPOSITION AND METHOD FOR REMOVING PHOTORESIST AND BOTTOM ANTI-REFLECTIVE COATING FOR A SEMICONDUCTOR SUBSTRATE - A composition for removing photoresist and bottom anti-reflective coating from a semiconductor substrate is disclosed. The composition may comprise a nontoxic solvent, the nontoxic solvent having a flash point above 80 degrees Celsius and being capable of dissolving acrylic polymer and phenolic polymer. The composition may further comprise Tetramethylammonium Hydroxide (TMAH) mixed with the nontoxic solvent. | 06-21-2012 |
20120157368 | PROCESSING AGENT COMPOSITION FOR SEMICONDUCTOR SURFACE AND METHOD FOR PROCESSING SEMICONDUCTOR SURFACE USING SAME - The present invention is directed to provide a semiconductor surface treating agent composition which is capable of stripping an anti-reflection coating layer, a resist layer, and a cured resist layer in the production process of a semiconductor device and the like easily and in a short time, as well as a method for treating a semiconductor surface, comprising that the composition is used. The present invention relates to a semiconductor surface treating agent composition, comprising [I] a compound generating a fluorine ion in water, [II] a carbon radical generating agent, [III] water, [IV] an organic solvent, and [V] at least one kind of compound selected from a group consisting of hydroxylamine and a hydroxylamine derivative represented by the general formula [1], as well as a method for treating the semiconductor surface, comprising that the composition is used: | 06-21-2012 |
20120172274 | RESIST REMOVER COMPOSITION AND METHOD FOR REMOVING RESIST USING THE COMPOSITION - The present invention is directed to provide a resist remover composition for semiconductor substrate which enables to remove a resist simply and easily in the photolithography process in the semiconductor field, and a method for removing a resist comprising that the composition is used. The present invention relates to a resist remover composition for semiconductor substrate, comprising [I] a carbon radical generating agent, [II] an acid, [III] a reducing agent, and [IV] an organic solvent, and having pH of lower than 7, and a method for removing a resist, comprising that the composition is used. | 07-05-2012 |
20120270763 | SPIN-ON FORMULATION AND METHOD FOR STRIPPING AN ION IMPLANTED PHOTORESIST - A spin-on formulation that is useful in stripping an ion implanted photoresist is provided that includes an aqueous solution of a water soluble polymer containing at least one acidic functional group, and at least one lanthanide metal-containing oxidant. The spin-on formulation is applied to an ion implanted photoresist and baked to form a modified photoresist. The modified photoresist is soluble in aqueous, acid or organic solvents. As such one of the aforementioned solvents can be used to completely strip the ion implanted photoresist as well as any photoresist residue that may be present. A rinse step can follow the stripping of the modified photoresist. | 10-25-2012 |
20120295828 | Composition for Removing Photoresist and/or Etching Residue From a Substrate and Use Thereof - Compositions containing certain organic solvents comprising at least 50% by weight of a glycol ether and a quaternary ammonium compound are capable of removing residues such as photoresist and/or etching residue from an article. | 11-22-2012 |
20120302483 | PHOTORESIST REMOVAL - Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist. | 11-29-2012 |
20130035272 | NOVEL NITRILE AND AMIDOXIME COMPOUNDS AND METHODS OF PREPARATION FOR SEMICONDUCTOR PROCESSING - Semiconductor processing compositions comprising amidoxime compounds having two or more amidoxime functional groups and their use in semiconductor processing to remove photoresist, polymeric materials, etching residues and copper oxides from semiconductor substrates, particularly substrates comprising copper, low-k dielectric material, titanium nitride, and/or titanium oxynitride. | 02-07-2013 |
20130109605 | COMPOSITION AND PROCESS FOR POST-ETCH REMOVAL OF PHOTORESIST AND/OR SACRIFICIAL ANTI-REFLECTIVE MATERIAL DEPOSITED ON A SUBSTRATE | 05-02-2013 |
20130116159 | PHOTORESIST AND POST ETCH RESIDUE CLEANING SOLUTION - A photoresist and post etch cleaning solution for semiconductor wafers comprising:
| 05-09-2013 |
20130123159 | AQUEOUS CERIUM-CONTAINING SOLUTION HAVING AN EXTENDED BATH LIFETIME FOR REMOVING MASK MATERIAL - An aqueous solution of a cerium (IV) complex or salt having an extended lifetime is provided. In one embodiment, the extended lifetime is achieved by adding at least one booster additive to an aqueous solution of the cerium (IV) complex or salt. In another embodiment, the extended lifetime is achieved by providing an aqueous solution of a cerium (IV) complex or salt and a cerium (III) complex or salt. The cerium (III) complex or salt can be added or it can be generated in-situ by introducing a reducing agent into the aqueous solution of the cerium (IV) complex or salt. The aqueous solution can be used to remove a mask material, especially an ion implanted and patterned photoresist, from a surface of a semiconductor substrate. | 05-16-2013 |
20130172225 | DYNAMIC MULTI-PURPOSE COMPOSITIONS FOR THE REMOVAL OF PHOTORESISTS AND METHOD FOR ITS USE - Improved dry stripper solutions for removing one, two or more photoresist layers from substrates are provided. The stripper solutions comprise dimethyl sulfoxide, a quaternary ammonium hydroxide, and an alkanolamine, a secondary solvent, and less than about 3 wt. % water. Methods for the preparation and use of the improved dry stripping solutions are additionally provided. | 07-04-2013 |
20130231271 | PHOTORESIST RESIDUE AND POLYMER RESIDUE REMOVING LIQUID COMPOSITION - Provided are a photoresist residue and polymer residue removing liquid composition, and a method of removing the residue used therewith, for removing photoresist residue and polymer residue produced during a process of manufacturing a semiconductor circuit element having metallic wiring. Specifically, the composition does not contain nitrogen-containing organic hydroxyl compounds, ammonia or fluorine compounds, and contains an aliphatic polycarboxylic acid having a melting point of 25° C. or higher with an excellent residue removing property and having a metallic oxide main component as the residue removing component. The photoresist residue and polymer residue removing liquid composition, and the method of removing the residue used therewith, is capable of preventing the aliphatic polycarboxylic acid from being recrystallized by evaporation of water after a solution has adhered around a cleaning device liquid ejecting nozzle or a cleaning tank and a chamber. In the photoresist residue and polymer residue removing liquid composition containing the aliphatic polycarboxylic acid with a melting point of 25° C. or higher, the removing liquid contains an organic solvent that is miscible with water and has a vapor pressure of 17 mm Hg or less at 25° C. and a hydroxyl group within the structure. | 09-05-2013 |
20130296214 | AQUEOUS CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUES - Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon. | 11-07-2013 |
20130296215 | WATER-RICH STRIPPING AND CLEANING FORMULATION AND METHOD FOR USING SAME - The present invention relates to water-rich formulations and the method using same, to remove bulk photoresists, post-etched and post-ashed residues, residues from Al back-end-of-the-line interconnect structures, as well as contaminations. The formulation comprises: hydroxylamine; corrosion inhibitor containing a mixture of alkyl dihydroxybenzene and hydroxyquinoline; an alkanolamine, a water-soluble solvent or the combination of the two; and at least 50% by weight of water. | 11-07-2013 |
20130303421 | PHOTORESIST STRIPPING TECHNIQUE - Photoresist stripping solutions are disclosed. An exemplary solution includes an organic solvent and an organic base, wherein the organic base is represented by the formula: | 11-14-2013 |
20130345106 | PHOTORESIST STRIPING COMPOSITIONS FOR MANUFACTURING LCD - The present invention relates to a photoresist stripping composition for all process of manufacturing LCD, more specifically to a water-borne united photoresist stripping composition, as a weak basic composite comprising a tertiary alkanolamine, water, and an organic solvent. The composition according to the present invention prevents a corrosion of Al and Cu metal wiring in process of manufacturing LCD, has a good capability of removing photoresist, and is applied to all Al process, Cu process, an organic film process, and COA process. | 12-26-2013 |
20140100151 | Stripping and Cleaning Compositions for Removal of Thick Film Resist - Stripping and cleaning compositions suitable for the removal of film resists include about 2-55% by weight of at least one alkanolamine or at least one morpholine or mixtures thereof; about 20-94% by weight of at least one organic solvent; and about 0.5-60% by weight water based on the total weight of the composition. | 04-10-2014 |
20140135246 | CLEANING COMPOSITION, CLEANING PROCESS, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE - A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition. There are also provided a process for producing a semiconductor device that includes a step of cleaning plasma etching residue formed above a semiconductor substrate using the cleaning method, and a cleaning composition for removing plasma etching residue formed above a semiconductor substrate that contains 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10. | 05-15-2014 |
20140142017 | Process And Composition For Removing Substances From Substrates - Compositions are described that are useful for removing organic and organometallic substances from substrates, for example, photoresist wafers. Processes are presented that apply a minimum volume of a composition as a coating to the inorganic substrate whereby sufficient heat is added and the organic or organometallic substances are completely removed by rinsing. The compositions and processes may be suitable for removing and, in some instances, completely dissolving photoresists of the positive and negative varieties, and specifically negative dry film photoresist from electronic devices. | 05-22-2014 |
20140155310 | DYNAMIC MULTI-PURPOSE COMPOSITION FOR THE REMOVAL OF PHOTORESISTS AND METHOD FOR ITS USE - The disclosure is directed solutions and processes to remove substances from substrates. The substances can include photoresist. The solutions can include dimethylsulfoxide, a quaternary ammonium hydroxide, an alkanolamine, and less than 3% by weight water of a total weight of the solution. The quaternary ammonium hydroxide can include tetramethylammonium hydroxide, dimethyldipropylammonium hydroxide, or methyltriethylammonium hydroxide. Additionally, the solutions can include a secondary solvent. For example, the secondary solvent can include an alcohol. In another example, the secondary solvent can include ethylene glycol. Methods for the preparation and use of the solution to remove substances from substrates are also described. | 06-05-2014 |
20140179583 | PEELING LIQUID FOR A RESIST - The invention discloses a peeling liquid for a resist, which relates to an optical element and is used for removing the color resist and the protective layer on a color filter rapidly and efficiently. The peeling liquid for a color resist on a color filter comprises an alkali metal alkoxide with a mass percentage of 10-45%, an organic amine with a mass percentage of 10-30%, a surfactant with a mass percentage of 5-30%, a solvent with a mass percentage of 20-60%, and an alcohol with a mass percentage of 1-55% in terms of the peeling liquid for a resist with a mass percentage of 100%. The peeling liquid for a resist in invention is used for removing the color resist and the protective layer of the substandard product in a color filter. | 06-26-2014 |
20140187460 | REMOVAL OF MASKING MATERIAL - Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. | 07-03-2014 |
20140213498 | PHOTORESIST REMOVAL - Disclosed herein is a composition and method for semiconductor processing. In one embodiment, a wet-cleaning composition for removal of photoresist is provided. The composition comprises a strong base; an oxidant; and a polar solvent. In another embodiment, a method for removing photoresist is provided. The method comprises the steps of applying a wet-cleaning composition comprising about 0.1 to about 30 weight percent strong base; about one to about 30 weight percent oxidant; about 20 to about 95 weight percent polar solvent; and removing the photoresist. | 07-31-2014 |
20140249065 | MICROELECTRONIC SUBSTRATE CLEANING COMPOSITIONS HAVING COPPER/AZOLE POLYMER INHIBITION - Semi-aqueous, alkaline microelectronic cleaning composition of pH≧8 containing:
| 09-04-2014 |
20150094249 | AQUEOUS SOLUTION AND PROCESS FOR REMOVING SUBSTANCES FROM SUBSTRATES - The disclosure is directed solutions and processes to remove substances from substrates. In some cases, the substances can include photoresist on semiconductor wafers. The solution can include hydrogen peroxide in an amount that is no greater than 15% by weight of the total weight of the solution. The solution can also include a quaternary ammonium hydroxide and water. Further, the solution can include an amine, a co-solvent, or both. One or more sides of the substrate can be contacted with the solution to remove one or more substances from the solution. | 04-02-2015 |
20150323871 | USE OF COMPOSITIONS COMPRISING A SURFACTANT AND A HYDROPHOBIZER FOR AVOIDING ANTI PATTERN COLLAPSE WHEN TREATING PATTERNED MATERIALS WITH LINE-SPACE DIMENSIONS OF 50 NM OR BELOW - In a method of treating a substrate including patterns having line-space dimensions of 50 nm or below, the substrate is rinsed by an aqueous composition including at least one non-ionic surfactant A and at least one hydrophobizer B. The at least one surfactant A has an equilibrium surface tension of 10 mN/m to 35 mN/m, determined from a solution of the at least one surfactant A in water at the critical micelle concentration. The hydrophobizer B is selected so that the contact angle of water to the substrate is increased by contacting the substrate with a solution of the hydrophobizer B in water by 5-95° compared to the contact angle of water to the substrate before such contacting. | 11-12-2015 |
20160056049 | WAFER TREATMENT SOLUTION FOR EDGE-BEAD REMOVAL, EDGE FILM HUMP REDUCTION AND RESIST SURFACE SMOOTH, ITS APPARATUS AND EDGE-BEAD REMOVAL METHOD BY USING THE SAME - The present disclosure provides a wafer treatment solution for edge-bead removal, edge film hump reduction and resist surface smooth. The wafer treatment solution includes a solution and a fluorine-containing additive mixed in the solution. The fluorine-containing additive has a following formula (I): R | 02-25-2016 |
20160122695 | CLEANING LIQUID FOR LITHOGRAPHY AND METHOD FOR CLEANING SUBSTRATE - A cleaning liquid for lithography that is capable of removing residual material which remains after an etching process, as well as suppressing corrosion of at least one of cobalt and alloys thereof, and a method for cleaning a substrate using the cleaning liquid. The cleaning liquid for lithography includes hydroxylamine, at least one basic compound selected from amine compounds other than hydroxylamine, and quaternary ammonium hydroxides, and water, and has a pH value of 8 or higher. The cleaning liquid is used in cleaning a substrate containing at least one of cobalt and alloys thereof. | 05-05-2016 |
20160152926 | PHOTORESIST REMOVAL | 06-02-2016 |
20160152930 | Stripping and Cleaning Compositions for Removal of Thick Film Resist | 06-02-2016 |
20160179011 | Semi-Aqueous Photoresist or Semiconductor Manufacturing Residue Stripping and Cleaning Composition with Improved Silicon Passivation | 06-23-2016 |
20160186106 | STRIPPING COMPOSITIONS FOR REMOVING PHOTORESISTS FROM SEMICONDUCTOR SUBSTRATES - This disclosure relates to photoresist stripping compositions containing 1) at least one water soluble polar aprotic organic solvent; 2) at least one alcohol solvent; 3) at least one quaternary ammonium hydroxide; 4) water; 5) at least one copper corrosion inhibitor selected from 6-substituted-2,4-diamino-1,3,5-triazines; and 6) optionally, at least one defoaming surfactant. | 06-30-2016 |
20160254139 | SEMICONDUCTOR SUBSTRATE TREATMENT LIQUID, TREATMENT METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR-SUBSTRATE PRODUCT USING THESE | 09-01-2016 |
20160376533 | SURFACTANTS AND METHODS OF MAKING AND USING SAME - Anionic surfactants have a formula:
| 12-29-2016 |
20170233687 | SEMICONDUCTOR ELEMENT CLEANING SOLUTION THAT SUPPRESSES DAMAGE TO TANTALUM-CONTAINING MATERIALS, AND CLEANING METHOD USING SAME | 08-17-2017 |
20220135915 | CLEANING COMPOSITION AND CLEANING METHOD USING THE SAME - A cleaning composition for removing post-etch or post-ash residues from a semiconductor substrate, and a cleaning method using the same are disclosed. The cleaning composition can comprise water; a fluorine compound; an alkanolamine compound; and a corrosion inhibitor. The corrosion inhibitor is a mixture of a first corrosion inhibitor and a second corrosion inhibitor. When using the cleaning composition, it is possible to efficiently remove the residues of various aspects existing on a surface of the substrate or the semiconductor device without damage to a substrate or a semiconductor device including various metal layers, insulating layers, etc. Accordingly, when a highly integrated and miniaturized semiconductor device is manufactured, it may be advantageously applied to the removal of residues generated on the surface of the substrate or the semiconductor device. | 05-05-2022 |